TM8LR64JFN-8A [TI]
8MX64 SYNCHRONOUS DRAM MODULE, 6ns, DMA168, DIMM-168;
| 型号： | TM8LR64JFN-8A |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 8MX64 SYNCHRONOUS DRAM MODULE, 6ns, DMA168, DIMM-168 动态存储器 内存集成电路 |
| 文件： | 总17页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
D
Organization:
– TM8LR64JFN . . . 8388608 × 64 Bits
– TM16LR64JFN . . . 16777216 × 64 Bits
D
High-Speed, Low-Noise, Low-Voltage TTL
(LVTTL) Interface
D
Read Latencies 2 and 3 Supported
D
D
Designed for 100-MHz 4-Clock Systems
D
Supports Burst-Interleave and
Burst-Interrupt Operations
JEDEC 168-Pin Dual-In-Line Memory
Module (DIMM) Without Buffer for Use With
Socket
D
D
D
D
D
D
Burst Length Programmable to 1, 2, 4,
and 8
D
TM8LR64JFN — Uses Eight 64M-Bit
Synchronous Dynamic RAMs (SDRAMs)
(8M × 8-Bit) in Plastic Thin Small-Outline
Packages (TSOPs)
Four Banks for On-Chip Interleaving
(Gapless Access)
Ambient Temperature Range
0°C to 70°C
D
D
D
TM16LR64JFN — Uses Sixteen 64M-Bit
SDRAMs (8M × 8-Bit) in Plastic TSOPs
Electroless Gold-Finished Contacts
Pipeline Architecture
Performance Ranges:
Serial Presence-Detect (SPD) Using
EEPROM
Single 3.3-V Power Supply
(±10% Tolerance)
D
Byte-Read/Write Capability
SYNCHRONOUS
CLOCK CYCLE
TIME
ACCESS TIME
CLOCK TO
OUTPUT
REFRESH
INTERVAL
t
t
t
t
t
REF
CK3
CK2
AC3
AC2
’xLR64JFN-8
8 ns
8 ns
10 ns
10 ns
6 ns
6 ns
6 ns
64 ms
64 ms
’xLR64JFN-8A
7.5 ns
description
The TM8LR64JFN is a 64M-byte, 168-pin dual-in-line memory module (DIMM). The DIMM is composed of eight
TMS664814DGE 8388608 x 8-bit SDRAMs, each in a 400-mil, 54-pin plastic thin small-outline package
(TSOP) mounted on a substrate with decoupling capacitors. See the TMS664814 data sheet (literature number
SMOS695).
The TM16LR64JFN is a 128M-byte, 168-pin DIMM. The DIMM is composed of sixteen TMS664814DGE
8388608 x 8-bit SDRAMs, each in a 400-mil, 54-pin plastic TSOP mounted on a substrate with decoupling
capacitors.
operation
The TM8LR64JFN operates as eight TMS664814DGE devices that are connected as shown in the
TM8LR64JFN functional block diagram. The TM16LR64JFN operates as 16 TMS664814DGE devices
connected as shown in the TM16LR64JFN functional block diagram.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1998, Texas Instruments Incorporated
PRODUCT PREVIEW information concerns products in the formative or
design phase of development. Characteristic data and other
specifications are design goals. Texas Instruments reserves the right to
change or discontinue these products without notice.
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
DUAL-IN-LINE MEMORY MODULE
(TOP VIEW)
TM8LR64JFN TM16LR64JFN
(SIDE VIEW) (SIDE VIEW)
PIN NOMENCLATURE
A[0:11]
A[0:8]
Row-Address Inputs
Column-Address Inputs
Bank-Select Zero
Bank-Select One
Column-Address Strobe
Check Bit In/Check Bit Out
Clock Enable
A13/BA0
A12/BA1
CAS
CB[0:7]
CKE[0:1]
CK[0:3]
DQ[0:63]
DQMB[0:7]
1
System Clock
10
11
Data-In/Data-Out
Data-In/Data-Out
Mask Enable
NC
No Connect
RAS
S[0:3]
SA[0:2]
Row-Address Strobe
Chip-Select
Serial Presence Detect (SPD)
Device Address Input
SPD Clock
SPD Address/Data
3.3-V Supply
Ground
SCL
SDA
V
DD
V
SS
WE
WP
Write Enable
Write Protect
40
41
84
2
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
Pin Assignments
PIN
PIN
NAME
PIN
NAME
PIN
NAME
NO.
1
NAME
NO.
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
NO.
85
NO.
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
V
SS
V
SS
V
SS
V
SS
2
DQ0
DQ1
DQ2
DQ3
NC
S2
86
DQ32
DQ33
DQ34
DQ35
CKE0
S3
3
87
4
DQMB2
DQMB3
NC
88
DQMB6
DQMB7
NC
5
89
6
V
DD
90
V
DD
7
DQ4
DQ5
DQ6
DQ7
DQ8
V
DD
91
DQ36
DQ37
DQ38
DQ39
DQ40
V
DD
8
NC
NC
92
NC
NC
9
93
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
CB2
CB3
94
CB6
CB7
95
V
SS
V
SS
96
V
SS
V
SS
DQ9
DQ10
DQ11
DQ12
DQ13
DQ16
DQ17
DQ18
DQ19
97
DQ41
DQ42
DQ43
DQ44
DQ45
DQ48
DQ49
DQ50
DQ51
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
V
DD
V
DD
V
DD
DQ20
NC
V
DD
DQ52
NC
DQ14
DQ15
CB0
DQ46
DQ47
CB4
NC
NC
CKE1
NC
CB1
V
SS
CB5
V
SS
V
SS
DQ21
DQ22
DQ23
V
SS
DQ53
DQ54
DQ55
NC
NC
NC
NC
V
DD
V
SS
V
DD
V
SS
WE
DQ24
DQ25
DQ26
DQ27
CAS
DQ56
DQ57
DQ58
DQ59
DQMB0
DQMB1
S0
DQMB4
DQMB5
S1
NC
V
DD
RAS
V
DD
V
SS
DQ28
DQ29
DQ30
DQ31
V
SS
DQ60
DQ61
DQ62
DQ63
A0
A2
A1
A3
A4
A5
A6
V
SS
A7
V
SS
A8
CK2
NC
A9
CK3
NC
A10
A12/BA1
A13/BA0
A11
WP
SA0
SA1
SA2
V
V
SDA
SCL
V
DD
DD
CK1
NC
DD
CK0
V
DD
V
DD
3
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
dual-in-line memory module and components
The dual-in-line memory module and components include:
D
D
D
PC substrate: 1,27 ± 0,1 mm (0.05 inch) nominal thickness; 0.005 inch/inch maximum warpage
Bypass capacitors: Multilayer ceramic
Contact area: Nickel plate and electroless gold-finished contacts over copper
functional block diagram for the TM8LR64JFN
S0
R
R
C
C
CK: U0, U4
CK: U1, U5
CS
CS
†
†
CK0
R
R
C
C
U0
U4
DQMB0
DQ[0:7]
DQM
DQMB4
DQM
CK: U2, U6
CK: U3, U7
R
R
CK2
8
8
DQ[0:7]
DQ[32:39]
DQ[0:7]
R
R
C
C
CK1
CK3
C
C
CS
CS
U1
U5
DQMB1
DQM
DQMB5
DQM
R
R
8
8
DQ[8:15]
DQ[0:7]
DQ[40:47]
DQ[0:7]
R = 10 Ω
R
= 10 Ω
C
C = 10 pF
S2
CS
CS
V
DD
U[0:7]
U2
U6
DQMB2
DQM
DQMB6
DQM
One 0.1 µF and
One 0.01 µF
R
R
8
8
DQ[16:23]
DQ[0:7]
DQ[48:55]
DQ[0:7]
V
SS
U[0:7]
CS
CS
SPD EEPROM
U3
U7
SCL
WP
DQMB3
DQM
DQMB7
DQM
SDA
R
R
8
8
DQ[24:31]
DQ[0:7]
DQ[56:63]
DQ[0:7]
A0
A1
A2
SA0 SA1 SA2
47 kΩ
RAS
CAS
WE
RAS: SDRAM U[0:7]
CAS: SDRAM U[0:7]
WE: SDRAM U[0:7]
CKE: SDRAM U[0:7]
A[0:13]: SDRAM U[0:7]
CKE0
A[0:13]
LEGEND:
CS
SPD
=
=
Chip select
Serial Presence Detect
†
Additional 3.3 pF capacity is used to balance loads among clocks.
4
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
functional block diagram for the TM16LR64JFN
S1
S0
V
U[0:7]
DD
One 0.1 µF and
One 0.01 µF
CS
CS
CS
CS
V
U[0:7]
SS
U0
UB0
U4
UB4
R = 10 Ω
= 10 Ω
DQMB0
DQ[0:7]
DQM
DQM
DQMB4
DQM
DQM
R
C
R
R
8
8
DQ[0:7]
DQ[0:7]
DQ[32:39]
DQ[0:7]
DQ[0:7]
V
DD
CS
CS
CS
CS
10 kΩ
CKE1
CKE0
CKE: UB[0:7]
CKE: U[0:7]
U1
UB1
U5
UB5
DQMB1
DQM
DQM
DQMB5
DQM
DQM
R
R
8
8
RAS
CAS
RAS: U[0:7], UB[0:7]
CAS: U[0:7], UB[0:7]
DQ[8:15]
DQ[0:7]
DQ[0:7]
DQ[40:47]
DQ[0:7]
DQ[0:7]
WE
WE: U[0:7], UB[0:7]
A[0:13]
A[0:13]: U[0:7], UB[0:7]
R
C
S3
S2
CK: U0, U4
CK: U1, U5
†
R
R
R
CK0
C
C
C
CS
CS
CS
CS
CK: UB0, UB4
CK: UB1, UB5
†
CK1
U2
UB2
U6
UB6
R
R
C
CK: U2, U6
CK: U3, U7
DQMB2
DQM
DQM
DQMB6
DQM
DQM
†
CK2
R
R
C
8
8
DQ[16:23]
DQ[0:7]
DQ[0:7]
DQ[48:55]
DQ[0:7]
DQ[0:7]
R
R
C
CK: UB2, UB6
CK: UB3, UB7
†
CK3
C
CS
CS
CS
CS
U3
U7
UB3
UB7
SPD EEPROM
DQMB3
DQM
DQMB7
DQM
DQM
DQM
SDA
SCL
WP
R
R
8
8
DQ[24:31]
DQ[0:7]
DQ[56:63]
DQ[0:7]
DQ[0:7]
DQ[0:7]
A0
A1
A2
SA0 SA1 SA2
47 kΩ
†
Additional 3.3 pF capacity is used to balance loads among clocks.
5
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
†
absolute maximum ratings over ambient temperature range (unless otherwise noted)
Supply voltage range, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 4.6 V
DD
Voltage range on any pin (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.5 V to 4.6 V
Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power dissipation: TM8LR64JFN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 W
TM16LR64JFN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 W
Ambient temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
A
stg
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 150°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to V
.
SS
recommended operating conditions
MIN NOM
MAX
UNIT
V
V
V
V
V
V
Supply voltage
3
3.3
0
3.6
DD
Supply voltage
V
SS
High-level input voltage
High-level input voltage for SPD device
Low-level input voltage
Ambient temperature
2
2
V
DD
+ 0.3
V
IH
5.5
0.8
70
V
IH-SPD
IL
–0.3
0
V
T
A
°C
capacitance over recommended ranges of supply voltage and ambient temperature,
‡
f = 1 MHz (see Note 2)
’xLR64JFN
PARAMETER
UNIT
MIN
2.5
MAX
C
C
C
C
C
C
C
C
Input capacitance, CK input
4
5
pF
pF
pF
pF
pF
pF
pF
pF
i(CK)
Input capacitance, address and control inputs: A0–A13, RAS, CAS, WE
Input capacitance, CKE input
2.5
i(AC)
5
i(CKE)
o
Output capacitance
4
2.5
2.5
6.5
5
Input capacitance, DQMBx input
i(DQMBx)
i(Sx)
Input capacitance, Sx input
5
SDA input/output capacitance
9
i/o(SDA)
i(SPD)
Input capacitance, SA0, SA1, SA2, SCL inputs
7
‡
Specifications in this table represent a single SDRAM device.
NOTE 2: = 3.3 V ± 0.3 V. Bias on pins under test is 0 V.
V
DD
6
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
electrical characteristics over recommended ranges of supply voltage and ambient temperature
†
(unless otherwise noted) (see Note 3)
’xLR64JFN-8 ’xLR64JFN-8A
PARAMETER
TEST CONDITIONS
= – 2 mA
UNIT
MIN
MAX
MIN
MAX
V
V
High-level output voltage
Low-level output voltage
I
I
2.4
2.4
V
V
OH
OH
= 2 mA
0.4
"10
"10
115
0.4
"10
"10
95
OL
OL
0 V ≤ V ≤ V
All other pins = 0 V to V
+ 0.3 V,
I
DD
I
I
Input current (leakage)
Output current (leakage)
µA
µA
DD
I
O
0 V ≤ V ≤ V
+ 0.3 V, Output disabled
O
DD
Burst length = 1,
CAS latency = 2
t
I
≥ t MIN,
RC RC
I
Operating current
mA
CC1
/I = 0 mA
OH OL
125
1
95
1
CAS latency = 3
(See Notes 4, 5, and 6)
I
I
CKE ≤ V MAX, t
= 15 ns (see Note 7)
CK
CC2P
IL
Precharge standby current in
power-down mode
mA
mA
CKE and CK ≤ V MAX, t
(see Note 8)
= ∞
CK
IL
1
1
CC2PS
I
I
CKE ≥ V MIN, t
IH
= 15 ns (see Note 7)
= 15 ns
CK
40
5
40
5
CC2N
Active standby current in
non-power-down mode
CK
= ∞ (see Note 8)
CK
t
CC2NS
CKE ≤ V MAX, t
IL
(see Notes 4 and 7)
I
I
I
5
5
5
5
CC3P
CC3PS
CC3N
Active standby current in
power-down mode
mA
mA
CKE and CK ≤ V MAX, t
(see Notes 4 and 8)
= ∞
CK
IL
CKE ≥ V MIN,
IH
50
50
t
= 15 ns (see Notes 4 and 7)
CK
Precharge standby current in
non-power-down mode
CKE ≥ V MIN,
IH
CK ≤ V MAX, t = ∞
CK
I
I
10
10
CC3NS
IL
(see Notes 4 and 8)
Page burst,
CAS latency = 2
CAS latency = 3
165
225
120
165
I /I = 0 mA
OH OL
All banks activated,
= one cycle
Burst current
mA
CC4
n
CCD
(see Notes 9 and 10)
CAS latency = 2
CAS latency = 3
150
150
1
150
150
1
t
≤ t
MIN
RC RC
I
I
Auto-refresh current
Self-refresh current
mA
mA
CC5
(see Notes 5 and 8)
CKE ≤ V MAX
IL
CC6
†
Specifications in this table represent a single SDRAM device.
NOTES: 3. All specifications apply to the device after power-up initialization. All control and address inputs must be stable and valid.
4. Only one bank is activated.
5.
t ≥ t MIN
RC RC
6. Control and address inputs change state twice during t
.
RC
7. Control and address inputs change state once every 30 ns.
8. Control and address inputs do not change state (stable).
9. Control and address inputs change state once every cycle.
10. Continuous burst access, n
CCD
= 1 cycle
7
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
†‡
ac timing requirements
’xLR64JFN-8
’xLR64JFN-8A
UNIT
MIN
10
8
MAX
MIN
15
8
MAX
t
t
t
t
t
t
t
t
t
t
Cycle time, CK
CAS latency = 2
CAS latency = 3
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK2
CK3
CH
CL
Cycle time, CK
Pulse duration, CK high
3
3
Pulse duraction, CK low
3
3
Access time, CK high to data out (see Note 11)
Access time, CK high to data out (see Note 11)
Hold time, CK high to data out with 50-pF load
CAS latency = 2
CAS latency = 3
6
6
7.5
6
AC2
AC3
OH
LZ
3
1
3
1
Delay time, CK high to DQ in low-impedance state (see Note 12)
Delay time, CK high to DQ in high-impedance state (see Note 13)
Setup time, address, control, and data input
8
8
HZ
2
2
IS
t
t
t
Hold time, address, control, and data input
Power down/self-refresh exit time
1
8
1
8
ns
ns
ns
IH
CESP
RAS
Delay time, ACTV command to DEAC or DCAB command
48 100000
48 100000
Delay time, ACTV, MRS, REFR, or SLFR to ACTV, MRS, REFR, or SLFR
command
t
t
t
68
68
ns
ns
ns
RC
Delay time, ACTV command to READ, READ-P, WRT, or WRT-P command
(see Note 14)
20
20
20
20
RCD
RP
Delay time, DEAC or DCAB command to ACTV, MRS, REFR, or SLFR
command
Delay time, ACTV command in one bank to ACTV command in the other
bank
t
t
t
16
16
16
16
ns
ns
ns
RRD
RSA
APR
Delay time, MRS command to ACTV, MRS, REFR, or SLFR command
Final data out of READ-P operation to ACTV, MRS, SLFR, or REFR
command
t
–(CL–1)
t
t
– (CL–1) t
* CK RP * CK
RP
t
t
Final data in of WRT-P operation to ACTV, MRS, SLFR, or REFR command
Transition time
t
+ 1 t
t
+ 1 t
CK
ns
APW
RP
1
CK
RP
1
5
5
ms
T
t
Refresh interval
64
64
ms
REF
n
n
n
n
n
n
Delay time, READ or WRT command to an interrupting command
Delay time, CS low or high to input enabled or inhibited
Delay time, CKE high or low to CLK enabled or disabled
Delay time, final data in of WRT operation to READ, READ-P, WRT, or WRT-P
Delay time, ENBL or MASK command to enabled or masked data in
Delay time, ENBL or MASK command to enabled or masked data out
1
0
1
1
0
2
1
0
1
1
0
2
cycles
cycles
cycles
cycles
cycles
cycles
CCD
CDD
CLE
CWL
DID
0
1
0
1
0
2
0
2
DOD
Delay time, DEAC or DCAB command to DQ in
CAS latency = 2
n
2
2
cycles
HZP2
high-impedance state
†
‡
All references are made to the rising transition of CK unless otherwise noted.
Specifications in this table represent a single SDRAM device.
NOTES: 11. t
is referenced from the rising transition of CK that precedes the data-out cycle. For example, the first data out t
is referenced
AC
AC
from the rising transition of CK that is read latency (one cycle after the READ command). Access time is measured at output
reference level 1.4 V.
12.
13.
t
is measured from the rising transition of CK that is read latency (one cycle after the READ command).
(max) defines the time at which the outputs are no longer driven and is not referenced to output voltage levels.
LZ
t
HZ
14. For read or write operations with automatic deactivate, t
must be set to satisfy minimum t
.
RAS
RCD
8
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
†‡
ac timing requirements (continued)
’xLR64JFN-8
’xLR64JFN-8A
UNIT
MIN
MAX
MIN
MAX
Delay time, DEAC or DCAB command to DQ in high-impedance
state
n
CAS latency = 3
3
0
3
0
cycles
HZP3
n
n
Delay time, WRT command to first data in
0
1
0
1
cycles
cycles
WCD
Delay time, final data in of WRT operation to DEAC or DCAB command
WR
†
‡
All references are made to the rising transition of CK unless otherwise noted.
Specifications in this table represent a single SDRAM device.
9
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
serial presence detect
The serial presence detect (SPD) is contained in a 256-byte serial EEPROM located on the module. The SPD
nonvolatile EEPROM contains various data such as module configuration, SDRAM organization, and timing
parameters (see Table 1 and Table 2). Only the first 128 bytes are programmed by Texas Instruments, while
theremaining128bytesareavailableforcustomeruse. ProgrammingisdonethroughanIICbususingtheclock
(SCL) and data (SDA) signals. All Texas Instruments modules comply with the current JEDEC SPD Standard.
See the Texas Instruments Serial Presence Detect Technical Reference (literature number SMMU001) for
further details.
SPD contents of each TMxLR64JFN device are listed in the following tables:
Table 1–TM8LR64JFN
Table 2–TM16LR64JFN
10
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
serial presence detect (continued)
Table 1. Serial Presence-Detect Data for the TM8LR64JFN
TM8LR64JFN-8
TM8LR64JFN-8A
BYTE
NO.
DESCRIPTION OF FUNCTION
ITEM
DATA
ITEM
DATA
Defines number of bytes written into serial memory during module
manufacturing
0
128 bytes
80h
128 bytes
80h
1
2
Total number of bytes of SPD memory device
Fundamental memory type (FPM, EDO, SDRAM, . . .)
Number of row addresses on this assembly
Number of column addresses on this assembly
Number of module rows on this assembly
Data width of this assembly
256 bytes
SDRAM
12
08h
04h
0Ch
09h
01h
40h
00h
01h
80h
60h
256 bytes
SDRAM
12
08h
04h
0Ch
09h
01h
40h
00h
01h
80h
60h
3
4
9
9
5
1 bank
64 bits
1 bank
64 bits
6
7
Data width continuation
8
Voltage interface standard of this assembly
SDRAM cycle time at maximum supported CAS latency (CL), CL = X
SDRAM access from clock at CL = X
LVTTL
LVTTL
9
t
t
= 8 ns
= 6 ns
t
t
= 8 ns
= 6 ns
CK
CK
10
AC
AC
DIMM configuration type (non-parity, parity, error correcting code
[ECC])
11
12
Non-Parity
00h
80h
Non-Parity
00h
80h
15.6 µs/
self-refresh
15.6 µs/
self-refresh
Refresh rate/type
13
14
15
16
17
18
19
20
SDRAM width, primary DRAM
Error-checking SDRAM data width
Minimum clock delay, back-to-back random column addresses
Burst lengths supported
x8
N/A
08h
00h
01h
0Fh
04h
06h
01h
01h
x8
N/A
08h
00h
01h
0Fh
04h
06h
01h
01h
1 CK cycle
1, 2, 4, 8
4 banks
2, 3
1 CK cycle
1, 2, 4, 8
4 banks
2, 3
Number of banks on each SDRAM device
CAS latencies supported
CS latency
0
0
Write latency
0
0
Non-buffered/
Non-registered
Non-buffered/
Non-registered
21
SDRAM module attributes
00h
00h
V tolerance =
DD
(+10%),
V tolerance =
DD
(+10%),
Burst read/write,
precharge all,
Burst read/write,
precharge all,
22
SDRAM device attributes: general
0Eh
0Eh
auto precharge
auto precharge
23
24
25
26
27
Minimum clock cycle time at CL = X – 1
Maximum data-access time from clock at CL = X – 1
Minimum clock cycle time at CL = X – 2
Maximum data-access time from clock at CL = X – 2
Minimum row-precharge time
t
= 10 ns
= 6 ns
A0h
60h
00h
00h
14h
t
= 15 ns
= 7.5 ns
N/A
F0h
75h
00h
00h
14h
CK
CK
t
t
AC
AC
N/A
N/A
N/A
t
= 20 ns
t
= 20 ns
RP
RP
11
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
serial presence detect (continued)
Table 1. Serial Presence-Detect Data for the TM8LR64JFN (Continued)
TM8LR64JFN-8
ITEM DATA
TM8LR64JFN-8A
ITEM DATA
BYTE
NO.
DESCRIPTION OF FUNCTION
Minimum row-active to row-active delay
28
29
t
t
= 16 ns
10h
14h
30h
10h
20h
10h
20h
10h
t
t
= 16 ns
10h
14h
30h
10h
20h
10h
20h
10h
RRD
RRD
Minimum RAS-to-CAS delay
= 20 ns
= 48 ns
= 20 ns
= 48 ns
RCD
RCD
30
Minimum RAS pulse width
t
t
RAS
RAS
31
Density of each bank on module
Command and address signal input setup time
Command and address signal input hold time
Data signal input setup time
64M Bytes
64M Bytes
32
t
= 2 ns
= 1 ns
= 2 ns
= 1 ns
t
= 2 ns
= 1 ns
= 2 ns
= 1 ns
IS
IS
33
t
t
IH
IH
34
t
t
IS
IS
35
Data signal input setup time
t
t
IH
IH
36–61
62
Superset features (may be used in the future)
SPD revision
Rev. 1.2
95
12h
5Fh
Rev. 1.2
196
12h
C4h
63
Checksum for byte 0–62
9700...
00h
9700...
00h
64–71
Manufacturer’s JEDEC ID code per JEP–106E
97h
97h
†
72
73
Manufacturing location
TBD
TBD
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
T
M
54h
4Dh
38h
4Ch
52h
36h
34h
4Ah
46h
4Eh
2Dh
38h
20h
20h
T
M
54h
4Dh
38h
4Ch
52h
36h
34h
4Ah
46h
4Eh
2Dh
38h
41h
20h
74
75
8
8
76
L
L
77
R
R
78
6
6
79
4
4
80
J
J
81
F
F
82
N
N
83
—
—
84
8
8
85
SPACE
SPACE
TBD
TBD
TBD
TBD
TBD
TBD
A
86–90
73–90
91
SPACE
TBD
TBD
TBD
TBD
TBD
TBD
†
†
Die revision code
†
PCB revision code
92
†
93–94
95–98
Manufacturing date
Assembly serial number
†
†
99–125 Manufacturer-specific data
126
Clock frequency
SDRAM component and clock interconnection details
100 MHz
199
64h
C7h
100 MHz
199
64h
C7h
127
‡
128–166 System-integrator-specific data
167–255 Open
TBD
TBD
†
‡
TBD indicates values are determined at manufacturing time and are module-dependent.
These TBD values are determined and programmed by the customer (optional).
12
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
serial presence detect (continued)
Table 2. Serial Presence-Detect Data for the TM16LR64JFN
TM16LR64JFN-8
TM16LR64JFN-8A
BYTE
NO.
DESCRIPTION OF FUNCTION
ITEM
DATA
ITEM
DATA
Defines number of bytes written into serial memory during module
manufacturing
0
128 bytes
80h
128 bytes
80h
1
2
Total number of bytes of SPD memory device
Fundamental memory type (FPM, EDO, SDRAM, . . .)
Number of row addresses on this assembly
Number of column addresses on this assembly
Number of module rows on this assembly
256 bytes
SDRAM
12
08h
04h
0Ch
09h
02h
40h
00h
01h
80h
60h
00h
256 bytes
SDRAM
12
08h
04h
0Ch
09h
02h
40h
00h
01h
80h
60h
00h
3
4
9
9
5
2 banks
64 bits
2 banks
64 bits
6
Data width of this assembly
7
Data width continuation
8
Voltage interface standard of this assembly
SDRAM cycle time at maximum supported CAS latency (CL), CL = X
SDRAM access from clock at CL = X
LVTTL
LVTTL
9
t
t
= 8 ns
= 6 ns
t
t
= 8 ns
= 6 ns
CK
CK
10
11
AC
AC
DIMM configuration type (non-parity, parity, error correcting code [ECC])
Non-Parity
Non-Parity
15.6 µs/
self-refresh
15.6 µs/
self-refresh
12
Refresh rate/type
80h
80h
13
14
15
16
17
18
19
20
SDRAM width, primary DRAM
Error-checking SDRAM data width
Minimum clock delay, back-to-back random column addresses
Burst lengths supported
x8
N/A
08h
00h
01h
0Fh
04h
06h
01h
01h
x8
N/A
08h
00h
01h
0Fh
04h
06h
01h
01h
1 CK cycle
1, 2, 4, 8
4 banks
2, 3
1 CK cycle
1, 2, 4, 8
4 banks
2, 3
Number of banks on each SDRAM device
CAS latencies supported
CS latency
0
0
Write latency
0
0
Non-buffered/
Non-registered
Non-buffered/
Non-registered
21
SDRAM module attributes
00h
00h
V tolerance =
DD
(+10%).
V tolerance =
DD
(+10%).
Burst read/write,
precharge all,
Burst read/write,
precharge all,
22
SDRAM device attributes: general
0Eh
0Eh
auto precharge
auto precharge
23
24
25
26
27
28
29
30
Minimum clock cycle time at CL = X – 1
Maximum data-access time from clock at CL = X – 1
Minimum clock cycle time at CL = X – 2
Maximum data-access time from clock at CL = X – 2
Minimum row-precharge time
t
= 10 ns
= 6 ns
A0h
60h
00h
00h
14h
10h
14h
30h
t
= 15 ns
= 7.5 ns
N/A
F0h
75h
00h
00h
14h
10h
14h
32h
CK
CK
t
t
AC
AC
N/A
N/A
N/A
t
= 20 ns
t
= 20 ns
RP
RP
Minimum row-active to row-active delay
Minimum RAS-to-CAS delay
t
t
= 16 ns
= 20 ns
= 48 ns
t
= 16 ns
= 20 ns
= 48 ns
RRD
RCD
RRD
t
RCD
Minimum RAS pulse width
t
t
RAS
RAS
13
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
serial presence detect (continued)
Table 2. Serial Presence-Detect Data for the TM16LR64JFN (Continued)
TM16LR64JFN-8
TM16LR64JFN-8A
BYTE
NO.
DESCRIPTION OF FUNCTION
Density of each bank on module
ITEM
DATA
ITEM
DATA
31
32
64M Bytes
10h
20h
10h
20h
10h
64M Bytes
10h
20h
10h
20h
10h
Command and address signal input setup time
Command and address signal input hold time
Data signal input setup time
t
= 2 ns
= 1 ns
= 2 ns
= 1 ns
t
IS
= 2 ns
= 1 ns
= 2 ns
= 1 ns
IS
33
t
t
IH
IH
34
t
t
IS
IS
35
Data signal input hold time
t
t
IH
IH
36–61
62
Superset features (may be used in the future)
SPD revision
Rev. 1.2
96
12h
60h
Rev. 1.2
197
12h
C5h
63
Checksum for byte 0–62
9700...
00h
9700...
00h
64–71
Manufacturer’s JEDEC ID code per JEP–106E
97h
97h
†
72
73
Manufacturing location
TBD
TBD
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
Manufacturer’s part number
T
54h
4Dh
31h
36h
4Ch
52h
36h
34h
4Ah
46h
4Eh
2Dh
38h
20h
20h
T
M
54h
4Dh
31h
36h
4Ch
52h
36h
34h
4Ah
46h
4Eh
2Dh
38h
41h
20h
74
M
75
1
6
1
76
6
77
L
L
78
R
R
79
6
6
80
4
4
81
J
J
82
F
F
83
N
N
84
—
—
85
8
8
86
SPACE
SPACE
TBD
TBD
TBD
TBD
TBD
TBD
A
87–90
73–90
91
SPACE
TBD
TBD
TBD
TBD
TBD
TBD
†
†
Die revision code
†
PCB revision code
92
†
93–94
95–98
Manufacturing date
Assembly serial number
†
†
99–125 Manufacturer-specific data
126
Clock frequency
SDRAM component and clock interconnection details
100 MHz
247
64h
F7h
100 MHz
247
64h
F7h
127
‡
128–166 System-integrator-specific data
167–255 Open
TBD
TBD
†
‡
TBD indicates values are determined at manufacturing time and are module-dependent.
These TBD values are determined and programmed by the customer (optional).
14
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
device symbolization (TM8LR64JFN)
TM8LR64JFN
Unbuffered Key Position
3.3-V Voltage Key Position
YY = Year Code
MM = Month Code
T = Assembly Site Code
-SS = Speed Code
NOTE A: Location of symbolization may vary.
15
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TM8LR64JFN 8 388 608 BY 64-BIT
TM16LR64JFN 16 777 216 BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULES
SMMS710 – MAY 1998
MECHANICAL DATA
BVC (R-PDIM-N168)
DUAL-IN-LINE MEMORY MODULE
5.255 (133,48)
5.245 (133,22)
(Note D)
0.054 (1,37)
Notch 0.157 (4,00) x 0.122 (3,10) Deep
2 Places
Notch 0.079 (2,00) x 0.122 (3,10) Deep
2 Places
0.046 (1,17)
0.050 (1,27)
0.125 (3,18)
0.039 (1,00) TYP
0.125 (3,18)
0.014 (0,35) MAX
0.118 (3,00) TYP
0.118 (3,00) DIA
2 Places
0.700 (17,78) TYP
1.550 (39,37)
1.450 (36,83)
0.106 (2,70) MAX
0.157 (4,00) MAX
(For Double-Sided DIMM Only)
4088193/A 05/98
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Falls within JEDEC MO-161
D. Dimension includes depanelization variations; applies between notch and tab edge.
E. Outline may vary above notches to allow router/panelization irregularities.
16
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
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In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
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Copyright 1999, Texas Instruments Incorporated
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