TMCS1100A2QDR [TI]
具有外部基准的精密隔离电流传感器 | D | 8 | -40 to 125;
| 型号： | TMCS1100A2QDR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有外部基准的精密隔离电流传感器 | D | 8 | -40 to 125 传感器 |
| 文件： | 总48页 (文件大小：2740K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TMCS1100-Q1
SBOSA43 – JUNE 2021
TMCS1100-Q1 AEC-Q100, 1% High-Precision, Basic Isolation Hall-Effect Current
Sensor With ±600-V Working Voltage
1 Features
3 Description
•
AEC-Q100 qualified for automotive applications
– Temperature Grade 1: –40°C to 125°C, TA
Functional Safety-Capable
– Documentation available to aid functional safety
system design
Total error: ±0.4% typical, ±0.9% maximum, –40°C
to 85°C
– Sensitivity error: ±0.4%
– Offset error: 7 mA
– Offset drift: 0.04 mA/°C
– Linearity error: 0.05%
Lifetime and environmental drift: <±0.5%
3-kVRMS isolation rating
The TMCS1100-Q1 is a galvanically isolated Hall-
effect current sensor capable of DC or AC current
measurement with high accuracy, excellent linearity,
and temperature stability. A low-drift, temperature-
compensated signal chain provides < 1% full-scale
error across the device temperature range.
•
•
The input current flows through an internal 1.8-mΩ
conductor that generates a magnetic field measured
by an integrated Hall-effect sensor. This structure
eliminates external concentrators and simplifies
design. Low conductor resistance minimizes power
loss and thermal dissipation. Inherent galvanic
insulation provides a 600-V lifetime working voltage
and 3-kVRMS basic isolation between the current path
and circuitry. Integrated electrical shielding enables
excellent common-mode rejection and transient
immunity.
•
•
•
•
•
•
•
•
Robust 600-V lifetime working voltage
Bidirectional and unidirectional current sensing
External reference voltage
Operating supply range: 3 V to 5.5 V
Signal bandwidth: 80 kHz
The output voltage is proportional to the input current
with four sensitivity options. Fixed sensitivity allows
the TMCS1100-Q1 to operate from a single 3-V to
5.5-V power supply, eliminates ratiometry errors, and
improves supply noise rejection. The current polarity
is considered positive when flowing into the positive
input pin. The VREF input pin provides a variable
zero-current output voltage, enabling bidirectional or
unidirectional current sensing.
Multiple sensitivity options:
– TMCS1100A1-Q1: 50 mV/A
– TMCS1100A2-Q1: 100 mV/A
– TMCS1100A3-Q1: 200 mV/A
– TMCS1100A4-Q1: 400 mV/A
Safety related certifications
•
– UL 1577 Component Recognition Program
– IEC/CB 62368-1
2 Applications
The TMCS1100-Q1 draws a maximum supply current
of 6 mA, and all sensitivity options are specified over
the operating temperature range of –40°C to +125°C.
•
•
•
•
•
Motor and load control
Inverter and H-bridge current measurements
Power factor correction
Overcurrent protection
DC and AC power monitoring
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
TMCS1100-Q1
SOIC (8)
4.90 mm × 3.90 mm
(1) For all available packages, see the package option
addendum at the end of the data sheet.
Passive / PFC
Rectifier
Bridge Driver
DC V+
TMCS1100-Q1
Loads
TMCS1100-Q1
AC
TMCS1100-Q1
DC V–
Current
Sense
Current
Sense
Current
Sense
Control
Control
Controller
Typical Application
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TMCS1100-Q1
SBOSA43 – JUNE 2021
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Table of Contents
1 Features............................................................................1
2 Applications.....................................................................1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Device Comparison.........................................................3
6 Pin Configuration and Functions...................................3
7 Specifications.................................................................. 4
7.1 Absolute Maximum Ratings ....................................... 4
7.2 ESD Ratings .............................................................. 4
7.3 Recommended Operating Conditions ........................4
7.4 Thermal Information ...................................................4
7.5 Power Ratings ............................................................5
7.6 Insulation Specifications ............................................ 5
7.7 Safety-Related Certifications ..................................... 6
7.8 Safety Limiting Values ................................................6
7.9 Electrical Characteristics ............................................7
7.10 Typical Characteristics............................................10
8 Parameter Measurement Information..........................15
8.1 Accuracy Parameters................................................15
8.2 Transient Response Parameters.............................. 18
8.3 Safe Operating Area................................................. 21
9 Detailed Description......................................................24
9.1 Overview...................................................................24
9.2 Functional Block Diagram.........................................24
9.3 Feature Description...................................................24
9.4 Device Functional Modes..........................................29
10 Application and Implementation................................30
10.1 Application Information........................................... 30
10.2 Typical Application.................................................. 34
11 Power Supply Recommendations..............................37
12 Layout...........................................................................38
12.1 Layout Guidelines................................................... 38
12.2 Layout Example...................................................... 39
13 Device and Documentation Support..........................40
13.1 Device Support....................................................... 40
13.2 Documentation Support.......................................... 40
13.3 Receiving Notification of Documentation Updates..40
13.4 Support Resources................................................. 40
13.5 Trademarks.............................................................40
13.6 Electrostatic Discharge Caution..............................40
13.7 Glossary..................................................................40
14 Mechanical, Packaging, and Orderable
Information.................................................................... 40
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
DATE
REVISION
NOTES
June 2021
*
Initial release.
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5 Device Comparison
Table 5-1. Device Comparison
BIDIRECTIONAL LINEAR MEASUREMENT
RANGE, VREF = VS / 2(1)
UNIDIRECTIONAL LINEAR MEASUREMENT
SENSITIVITY
PRODUCT
(1)
RANGE, VREF = VGND
ΔVOUT / ΔIIN+, IN–
VS = 5 V
±46 A(2)
±23 A(2)
±11.5 A
±5.75 A
VS = 3.3 V
±29 A(2)
±14.5 A
±7.25 A
--
VS = 5 V
VS = 3.3 V
1 A to 62 A(2)
0.5 A to 31 A(2)
0.25 A to 15.5 A
--
TMCS1100A1-Q1
TMCS1100A2-Q1
TMCS1100A3-Q1
TMCS1100A4-Q1
50 mV/A
100 mV/A
200 mV/A
400 mV/A
1 A to 96 A(2)
0.5 A to 48 A(2)
0.25 A to 24 A(2)
0.125 A to 12 A
(1) Linear range limited by swing to supply and ground.
(2) Current levels must remain below both allowable continuous DC/RMS and transient peak current safe operating areas to not exceed
device thermal limits. See the Safe Operating Area section.
6 Pin Configuration and Functions
IN+
IN+
INœ
INœ
1
2
3
4
8
7
6
5
VS
VOUT
VREF
GND
Not to scale
Figure 6-1. D Package 8-Pin SOIC Top View
Table 6-1. Pin Functions
PIN
NAME
I/O
DESCRIPTION
NO.
1
IN+
IN+
Analog input
Analog input
Analog input
Analog input
Analog
Input current positive pin
Input current positive pin
Input current negative pin
Input current negative pin
Ground
2
3
IN–
4
IN–
5
GND
VREF
VOUT
VS
6
Analog input
Analog output
Analog
Zero current output voltage reference
Output voltage
7
8
Power supply
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
GND – 0.3
GND – 0.3
GND – 0.3
–65
MAX
6
UNIT
V
VS
Supply voltage
Analog input
VREF
VOUT
(VS) + 0.3
(VS) + 0.3
150
V
Analog output
V
TJ
Junction temperature
Storage temperature
°C
°C
Tstg
–65
150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
7.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2)
±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
–600
3
NOM
MAX
600
5.5
UNIT
VPK
V
(1)
VIN+,VIN–
VS
Input voltage
Operating supply voltage, TMCS1100A1-Q1-A3-Q1
Operating supply voltage, TMCS1100A4-Q1
Operating free-air temperature
5
5
VS
4.5
5.5
V
(2)
TA
–40
125
°C
(1) VIN+ and VIN– refer to the voltage at input current pins IN+ and IN–, relative to pin 5 (GND).
(2) Input current safe operating area is constrained by junction temperature. Recommended condition based on the TMCS1100EVM .
Input current rating is derated for elevated ambient temperatures.
7.4 Thermal Information
TMCS1100 -Q1 (2)
THERMAL METRIC(1)
D (SOIC)
8 PINS
36.6
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
50.7
9.6
ΨJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
–0.1
ΨJB
11.7
RθJC(bot)
N/A
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(2) Applies when device mounted on TMCS1100EVM . For more details, see the Safe Operating Area section.
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7.5 Power Ratings
VS = 5.5 V, VREF = GND, TA = 125℃, TJ = 150℃, device soldered on TMCS1100EVM .
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
PD
Maximum power dissipation (both sides)
673
mW
Maximum power dissipation (current input,
side-1)
PD1
PD2
IIN = 16 A
VS = 5.5 V, IQ = 6mA, no VOUT load
640
33
mW
mW
Maximum power dissipation by (side-2)
7.6 Insulation Specifications
PARAMETER
TEST CONDITIONS
VALUE
UNIT
GENERAL
CLR
CPG
External clearance(1)
Shortest terminal-to-terminal distance through air
4
4
mm
mm
Shortest terminal-to-terminal distance across the
package surface
External creepage(1)
DTI
CTI
Distance through the insulation
Comparative tracking index
Material group
Minimum internal gap (internal clearance)
DIN EN 60112; IEC 60112
60
>400
II
µm
V
Rated mains voltage ≤ 150 VRMS
Rated mains voltage ≤ 300 VRMS
AC voltage (bipolar)
I-IV
I-III
600
Overvoltage category
VIORM
Maximum repetitive peak isolation voltage
VPK
VRMS
VDC
AC voltage (sine wave); Time Dependent
Dielectric Breakdown test, see Insulation Lifetime.
424
600
VIOWM
Maximum working isolation voltage
DC voltage
VTEST = VIOTM = 4242VPK, t = 60 s (qualification);
VTEST = 1.2 × VIOTM = 5090VPK, t = 1 s (100%
production)
VIOTM
Maximum transient isolation voltage
Maximum surge isolation voltage(2)
4242
6000
≤5
VPK
Test method per IEC 62368-1, 1.2/50 µs
waveform,
VTEST = 1.3 × VIOSM = 7800VPK (qualification)
VIOSM
VPK
Method a: After I/O safety test subgroup 2/3,
Vini = VIOTM = 4242VPK, tini = 60 s;
Vpd(m) = 1.2 × VIORM = 700VPK, tm = 10 s
Method a: After environmental tests subgroup 1,
Vini = VIOTM = 4242VPK, tini = 60 s;
Vpd(m) = 1.2 × VIORM = 700VPK, tm = 10 s
≤5
qpd
Apparent charge(3)
pC
Method b3: At routine test (100% production) and
preconditioning (type test)
Vini = 1.2 × VIOTM = 5090VPK, tini = 1 s;
Vpd(m) = 1.2 × VIOTM = 5090VPK, tm = 1 s
≤5
CIO
RIO
Barrier capacitance, input to output(4)
Isolation resistance, input to output(4)
Pollution degree
VIO = 0.4 sin (2πft), f = 1 MHz
VIO = 500 V, TA = 25°C
0.6
>1012
>1011
>109
2
pF
Ω
VIO = 500 V, 100°C ≤ TA ≤ 125°C
VIO = 500 V at TS = 150°C
Ω
Ω
UL 1577
VTEST = VISO, t = 60 s (qualification); VTEST = 1.2 ×
VISO
Withstand isolation voltage
VISO
,
3000
VRMS
t = 1 s (100% production)
(1) Apply creepage and clearance requirements according to the specific equipment isolation standards of an application. Take care
to maintain the creepage and clearance distance of the board design to make sure that the mounting pads of the isolator on the
printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases.
Techniques such as inserting grooves, ribs, or both on a printed circuit board are used to help increase these specifications.
(2) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
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(3) Apparent charge is electrical discharge caused by a partial discharge (pd).
(4) All pins on each side of the barrier tied together creating a two-terminal device
7.7 Safety-Related Certifications
UL
UL 1577 Component Recognition Program
File number: E181974
Certified according to IEC 62368-1 CB
Certificate number: US-36733-UL
7.8 Safety Limiting Values
Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
RθJA = 36.6°C/W, TJ = 150°C, TA = 25°C, see Thermal
Derating Curve, Side 1.
IS
IS
Safety input current (side 1)(1)
30
A
Safety input, output, or supply
current (side 2)(1)
RθJA = 36.6°C/W, VI = 5 V, TJ = 150°C, TA = 25°C,
see Thermal Derating Curve, Side 2.
0.68
Safety input, output, or total
power(1)
RθJA = 36.6°C/W, TJ = 150°C, TA = 25°C, see Thermal
Derating Curve, Both Sides.
PS
TS
3.4
W
Safety temperature(1)
150
℃
(1) The maximum safety temperature, TS, has the same value as the maximum junction temperature, TJ, specified for the device. The
IS and PS parameters represent the safety current and safety power respectively. The maximum limits of IS and PS should not be
exceeded. These limits vary with the ambient temperature, TA.
The junction-to-air thermal resistance, RθJA, in the Thermal Information table is that of a device installed on the TMCS1100EVM . Use
these equations to calculate the value for each parameter:
TJ = TA + RθJA × P, where P is the power dissipated in the device.
TJ(max) = TS = TA + RθJA × PS, where TJ(max) is the maximum allowed junction temperature.
PS = IS × VI, where VI is the maximum input voltage.
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7.9 Electrical Characteristics
at TA = 25°C, VS = 5 V, VREF = 2.5 V (unless otherwise noted)
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OUTPUT
TMCS1100A1-Q1
50
100
mV/A
mV/A
mV/A
mV/A
TMCS1100A2-Q1
Sensitivity(7)
TMCS1100A3-Q1
200
TMCS1100A4-Q1
400
Sensitivity error
0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= 25ºC
±0.2%
±0.7%
Sensitivity error, including lifetime and
environmental drift (5)
0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= 25ºC
-0.47% ±1.02%
±0.4% ±0.85%
0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= –40ºC to
+85ºC
Sensitivity error
0.05 V ≤ VOUT ≤ VS – 0.2 V, TA= –40ºC to
+125ºC
±0.5% ±1.15%
±0.05%
Nonlinearity error
VOUT = 0.5 V to VS – 0.5 V
TMCS1100A1-Q1
±0.4
±0.6
±0.8
±2.2
±3.7
±4
±3
±5
mV
mV
mV
mV
TMCS1100A2-Q1
VOE
Output voltage offset error(1)
Output voltage offset drift
Offset error, RTI(1) (3)
TMCS1100A3-Q1
±8
TMCS1100A4-Q1
±19
TMCS1100A1-Q1, TA= –40ºC to +125ºC
TMCS1100A2-Q1, TA= –40ºC to +125ºC
TMCS1100A3-Q1, TA= –40ºC to +125ºC
TMCS1100A4-Q1, TA= –40ºC to +125ºC
TMCS1100A1-Q1
±12 µV/℃
±19 µV/℃
±35 µV/℃
±138 µV/℃
±8.2
±26
±8
±60
±50
mA
mA
mA
mA
TMCS1100A2-Q1
±6
IOS
TMCS1100A3-Q1
±4
±40
TMCS1100A4-Q1
±5.5
±74
±40
±41
±65
±47.5
TMCS1100A1-Q1, TA= –40ºC to +125ºC
TMCS1100A2-Q1, TA= –40ºC to +125ºC
TMCS1100A3-Q1, TA= –40ºC to +125ºC
TMCS1100A4-Q1, TA= –40ºC to +125ºC
±240 µA/°C
±190 µA/°C
±175 µA/°C
±345 µA/°C
Offset error temperature drift, RTI(3)
Power-supply rejection ratio
TMCS1100A1-Q1-A3-Q1, VS = 3 V to 5.5
V, VREF = VS/2, TA= –40ºC to +125ºC
±1
±1
±2 mV/V
±3 mV/V
PSRR
TMCS1100A4-Q1, VS = 4.5 V to 5.5
V, VREF = VS/2, TA= –40ºC to +125ºC
CMTI
Common mode transient immunity
Common mode rejection ratio, RTI(3)
50
5
kV/µs
uA/V
CMRR
DC to 60Hz
VREF = 0.5 V to 4.5 V, TMCS1100A1-Q1-
A3-Q1
1
3.5 mV/V
Reference voltage rejection ratio, output
referred
RVRR
VREF = 0.5 V to 4.5 V, TMCS1100A4-Q1
TMCS1100A1-Q1
1.5
380
330
300
225
8
mV/V
μA/√Hz
μA/√Hz
μA/√Hz
μA/√Hz
TMCS1100A2-Q1
Noise density, RTI(3)
TMCS1100A3-Q1
TMCS1100A4-Q1
INPUT
RIN
Input conductor resistance
IN+ to IN–
1.8
4.4
mΩ
Input conductor resistance temperature
drift
TA= –40ºC to +125ºC
μΩ/°C
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at TA = 25°C, VS = 5 V, VREF = 2.5 V (unless otherwise noted)
PARAMETERS
TEST CONDITIONS
MIN
TYP
1.1
30
MAX
UNIT
mT/A
A
G
Magnetic coupling factor
TA= 25ºC
TA= 25ºC
TA= 85ºC
TA= 105ºC
TA= 125ºC
25
A
IIN,max
Allowable continuous RMS current (4)
22.5
16
A
A
VREF
Reference input voltage
VREF input current
VGND
VS
±5
V
VREF = GND, VS
±1
µA
Maximum source impedance of external
circuit driving VREF
VREF external source impedance
5
kΩ
VOLTAGE OUTPUT
ZOUT Closed loop output impedance
f = 1 Hz to 1 kHz
0.2
2
Ω
Ω
f = 10 kHz
Maximum capacitive load
Short circuit output current
Swing to VS power-supply rail
No sustained oscillation
VOUT short to ground, short to VS
RL = 10 kΩ to GND, TA= –40ºC to +125ºC
1
nF
mA
V
90
VS – 0.02 VS – 0.1
VGND
+
Swing to GND, current driven
RL = 10 kΩ to GND, TA= –40ºC to +125ºC
VGND + 5
VGND + 5
mV
mV
10
TMCS1100A1-Q1-A3-Q1, RL = 10 kΩ to
GND, TA= –40ºC to +125ºC, VREF =
GND, IIN = 0 A
VGND
+
20
Swing to GND, zero current
TMCS1100A4-Q1, RL = 10 kΩ to GND,
VGND
+
VGND
+
TA= –40ºC to +125ºC, VREF = GND, IIN
0 A
=
mV
20
55
FREQUENCY RESPONSE
BW
SR
Bandwidth(6)
–3-dB Bandwidth
80
kHz
Slew rate of output amplifier during single
transient step.
Slew rate(6)
1.5
V/µs
Time between the input current step
reaching 90% of final value to the sensor
output reaching 90% of its final value, for
a 1V output transition.
tr
Response time(6)
6.5
4
µs
µs
Time between the input current step
reaching 10% of final value to the sensor
output reaching 10% of its final value, for
a 1V output transition.
tp
Propagation delay(6)
Time between the input current step
reaching 90% of final value to the sensor
output reaching 90% of its final value.
Input current step amplitude is twice full
scale output range.
tr,SC
Current overload response time(6)
5
3
µs
Time between the input current step
reaching 10% of final value to the sensor
output reaching 10% of its final value.
Input current step amplitude is twice full
scale output range.
tp,SC
Current overload propagation delay(6)
Current overload recovery time
µs
µs
Time from end of current causing output
saturation condition to valid output
15
POWER SUPPLY
IQ Quiescent current
TA = 25ºC
4.5
5.5
6
mA
mA
TA = –40ºC to +125ºC
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at TA = 25°C, VS = 5 V, VREF = 2.5 V (unless otherwise noted)
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Power on time
Time from VS > 3 V to valid output
25
ms
(1) Excludes effect of external magnetic fields. See the Accuracy Parameters section for details to calculate error due to external magnetic
fields.
(2) Excluding magnetic coupling from layout deviation from recommended layout. See the Layout section for more information.
(3) RTI = referred-to-input. Output voltage is divided by device sensitivity to refer signal to input current. See the Parameter Measurement
Information section.
(4) Thermally limited by junction temperature. Applies when device mounted on TMCS1100EVM . For more details, see the Safe
Operating Area section.
(5) Lifetime and environmental drift specifications based on three lot AEC-Q100 qualification stress test results. Typical values are
population mean+1σ from worst case stress test condition. Min/max are tested device population mean±6σ; devices tested in AEC-
Q100 qualification stayed within min/max limits for all stress conditions. See Lifetime and Environmental Stability section for more
details.
(6) Refer to the Transient Response section for details of frequency and transient response of the device.
(7) Centered parameter based on TMCS1100EVM PCB layout. See Layout section. Device must be operated below maximum junction
temperature.
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7.10 Typical Characteristics
0.8
0.6
0.4
0.2
0
80
60
A1
A2
A3
A4
A1
A2
A3
A4
40
20
0
-0.2
-0.4
-0.6
-0.8
-20
-40
-60
-80
-50
-25
0
25
Temperature (°C)
50
75
100
125
150
-50
-25
0
25
Temperature (°C)
50
75
100
125
150
Figure 7-1. Sensitivity Error vs. Temperature
Figure 7-2. Input Offset Current vs. Temperature
0.25
A1
A2
A3
A4
0.2
0.15
0.1
0.05
0
D023
Sensitivity Error (%)
All sensitivities
-50
-25
0
25
50
75
Temperature (°C)
100
125
150
Figure 7-4. Sensitivity Error Production
Distribution
Figure 7-3. Non-Linearity vs. Temperature
D024
D025
IOS (mA)
IOS (mA)
TMCS1100A1-Q1
TMCS1100A2-Q1
Figure 7-5. Input Offset Current Production
Distribution
Figure 7-6. Input Offset Current Production
Distribution
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D026
D027
IOS (mA)
IOS (mA)
TMCS1100A3-Q1
TMCS1100A4-Q1
Figure 7-7. Input Offset Current Production
Distribution
Figure 7-8. Input Offset Current Production
Distribution
4
3
30
0
2
-30
1
0
-60
-1
-2
-3
-90
-120
-150
-180
-4
All gains 80kHz -3dB
-5
-6
10
100
1k 10k
Frequency (Hz)
100k
1M
10
100
1k
Frequency (Hz)
10k
100k
Figure 7-9. Sensitivity vs. Frequency, All Gains
Normalized to 1 Hz
Figure 7-10. Phase vs. Frequency, All Gains
VS
(VS) – 0.5
(VS) – 1
10k
(VS) – 1.5
(VS) – 2
–
(VS) 2.5
1k
(VS) – 3
100
10
GND + 3
GND + 2.5
GND + 2
GND + 1.5
GND + 1
GND + 0.5
GND
1
0
20
40
60
80
100
120
140
160
Output Current (mA)
100m
1
10
100
1k
Frequency (Hz)
10k
100k
1M
Figure 7-11. PSRR vs. Frequency
Figure 7-12. Output Swing vs. Output Current
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100
10
1
5.2
5
A1
A2
A3
A4
4.8
4.6
4.4
4.2
0.1
10
100
1k 10k
Frequency (Hz)
100k
1M
-50
-25
0
25
50
75
Temperature (°C)
100
125
150
Figure 7-13. Output Impedance vs. Frequency
Figure 7-14. Quiescent Current vs. Temperature
20
15
10
400
A1
A2
A3
A4
350
300
250
200
5
0
-5
-10
-15
A1
A2
A3
A4
150
10
100
1k
Frequency (Hz)
10k
100k
0
0.5
1
1.5
2
2.5
VREF (V)
3
3.5
4
4.5
5
Figure 7-16. Input-Referred Noise vs. Frequency
Figure 7-15. Output Voltage Offset vs. VREF
90
75
60
45
30
15
0
4
90
75
60
45
30
15
0
4
IIN
V1
V2
3.5
3
3.5
3
2.5
2
2.5
2
1.5
1
1.5
1
IIN
V1
V2
-15
0.5
-15
0.5
Time (4ms/div)
Time (4ms/div)
Figure 7-17. Voltage Output Step, Rising
Figure 7-18. Voltage Output Step, Falling
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70
60
50
40
30
20
10
0
6
IIN
VOUT
5
4
3
2
1
0
-1
-2
-10
Time (4ms/div)
Figure 7-20. Startup Transient Response
Figure 7-19. Current Overload Response
2.4
2.3
2.2
2.1
2
1.9
1.8
1.7
1.6
1.5
1.4
-50
-25
0
25
50
75
Temperature (°C)
100
125
150
Figure 7-21. Input Conductor Resistance vs. Temperature
7.10.1 Insulation Characteristics Curves
35
30
25
20
15
10
5
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
20
40
60
Ambient Temperature (°C)
80
100
120
140
160
0
20
40
60
Ambient Temperature (°C)
80
100
120
140
160
Figure 7-22. Thermal Derating Curve for Safety-
Limiting Current, Side 1
Figure 7-23. Thermal Derating Curve for Safety-
Limiting Current, Side 2
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4
3.5
3
2.5
2
1.5
1
0.5
0
0
20
40
60
80
100
Ambient Temperature (°C)
120
140
160
Figure 7-24. Thermal Derating Curve for Safety-Limiting Power
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8 Parameter Measurement Information
8.1 Accuracy Parameters
The ideal first-order transfer function of the TMCS1100-Q1 is given by Equation 1, where the output voltage is
a linear function of input current. The accuracy of the device is quantified both by the error terms in the transfer
function parameters, as well as by nonidealities that introduce additional error terms not in the simplified linear
model. See Total Error Calculation Examples for example calculations of total error, including all device error
terms.
VOUT = S × IIN + VREF
(1)
where
•
•
•
•
VOUT is the analog output voltage.
S is the ideal sensitivity of the device.
IIN is the isolated input current.
VREF is the voltage applied to the reference voltage input.
where
•
•
•
•
VOUT is the analog output voltage.
S is the ideal sensitivity of the device.
IIN is the isolated input current.
VOUT,0A is the zero current output voltage for the device variant.
8.1.1 Sensitivity Error
Sensitivity is the proportional change in the sensor output voltage due to a change in the input conductor
current. This sensitivity is the slope of the first-order transfer function of the sensor, as shown in Figure 8-1. The
sensitivity of the TMCS1100-Q1 is tested and calibrated at the factory for high accuracy.
VOUT (V)
VREF + VFS+
VNL
S = Slope (V/A)
best fit linear
VREF
VOUT, 0 A
VOE
VREF
VREF œ VFSœ
IFSœ
IFS+
IIN (A)
Figure 8-1. Sensitivity, Offset, and Nonlinearity Error
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Deviation from ideal sensitivity is quantified by sensitivity error, defined as the percent variation of the best-fit
measured sensitivity from the ideal sensitivity. When specified over a temperature range, this is the worst-case
sensitivity error at any temperature within the range.
eS = [(Sfit – Sideal) / Sideal] × 100%
(2)
where
•
•
•
eS is the sensitivity error.
Sfit is the best fit sensitivity.
SIdeal is the ideal sensitivity.
8.1.2 Offset Error and Offset Error Drift
Offset error is the deviation from the ideal output voltage with zero input current through the device. Offset error
can be referred to the output as a voltage error VOE or referred to the input as a current offset error IOS. Offset
error is a single error source, however, and must only be included once in error calculations.
The output voltage offset error of the TMCS1100-Q1 is the error in the zero current output voltage from the
VREF pin voltage as in Equation 3.
VOE = VOUT,0A - VREF
(3)
where
•
VOUT,0A is the device output voltage with zero input current.
The offset error includes the magnetic offset of the Hall sensor and any offset voltage errors of the signal chain.
The input referred (RTI) offset error is the output voltage offset error divided by the sensitivity of the device,
shown in Equation 4. Refer the offset error to the input of the device to allow for easier total error calculations
and direct comparison to input current levels. No matter how the calculations are done, the error sources
quantified by VOE and IOS are the same, and should only be included once for error calculations.
IOS = VOE / S
(4)
Offset error drift is the change in the input-referred offset error per degree Celsius change in ambient
temperature. This parameter is reported in µA/°C. To convert offset drift to an absolute offset for a given change
in temperature, multiply the drift by the change in temperature and convert to percentage, as in Equation 5.
mA
èC
≈
«
’
IOS,25èC + IOS,drift ∆
ì DT
÷
◊
eI
% =
)
(
OS,DT
I
IN
(5)
where
•
•
IOS,drift is the specified input-referred device offset drift.
ΔT is the temperature range from 25°C.
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8.1.3 Nonlinearity Error
Nonlinearity is the deviation of the output voltage from a linear relationship to the input current. Nonlinearity
voltage, as shown in Figure 8-1, is the maximum voltage deviation from the best-fit line based on measured
parameters, calculated by Equation 6.
VNL = VOUT,MEAS – (IMEAS × Sfit + VOUT,0A
)
(6)
where
•
•
•
•
VOUT,MEAS is the voltage output at maximum deviation from best fit.
IMEAS is the input current at maximum deviation from best fit.
Sfit is the best-fit sensitivity of the device.
VOUT,0A is the device zero current output voltage.
Nonlinearity error (eNL) for the TMCS1100-Q1 is the nonlinearity voltage specified as a percentage of the
full-scale output range (VFS), as shown in Equation 7.
VNL
eNL = 100% *
VFS
(7)
8.1.4 Power Supply Rejection Ratio
Power supply rejection ratio (PSRR) is the change in device offset due to variation of supply voltage from the
nominal 5 V. The error contribution at the input current of interest can be calculated by Equation 8.
PSRR * (VS - 5)
S
ePSRR(%) =
I
IN
(8)
where
•
•
VS is the operational supply voltage.
S is the device sensitivity.
8.1.5 Common-Mode Rejection Ratio
Common-mode rejection ratio (CMRR) quantifies the effective input current error due to a varying voltage on
the isolated input of the device. Due to magnetic coupling and galvanic isolation of the current signal, the
TMCS1100-Q1 has very high rejection of input common-mode voltage. Percent error contribution from input
common-mode variation can be calculated by Equation 9.
CMRR * VCM
eCMRR(%) =
I
IN
(9)
where
•
VCM is the maximum operational AC or DC voltage on the input of the device.
8.1.6 Reference Voltage Rejection Ratio
The voltage applied to the VREF pin sets the zero current output voltage for the TMCS1100-Q1. Ideally, the zero
current output voltage directly tracks VREF. Light internal mismatch can cause minor errors, however. When the
reference voltage deviates from half of the supply, an additional effective output offset error is introduced into
the device transfer function. The reference voltage rejection ratio (RVRR) is the effective change in output offset
voltage due to this deviation. Error due to reference rejection can be calculated by Equation 10.
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VS
2
RVRR * (VREF
S
-
)
eV (%) =
REF
I
IN
(10)
8.1.7 External Magnetic Field Errors
The TMCS1100-Q1 does not have stray field-rejection capabilities, so external magnetic fields from adjacent
high-current traces or nearby magnets can impact the output measurement. The total sensitivity (S) of the device
is comprised of the initial transformation of input current to magnetic field quantified as the magnetic coupling
factor (G), as well as the sensitivity of the Hall element and the analog circuitry that is factory calibrated to
provide a final sensitivity. The output voltage is proportional to the input current by the device sensitivity, as
defined in Equation 11.
S = G * SHall * AV
(11)
where
•
•
•
•
S is the TMCS1100-Q1 sensitivity in mV/A.
G is the magnetic coupling factor in mT/A.
SHall is the sensitivity of the Hall plate in mV/mT.
AV is the calibrated analog circuitry gain in V/V.
An external field, BEXT, is measured by the Hall sensor and signal chain, in addition to the field generated by the
leadframe current, and is added as an extra input term in the total output voltage function:
VOUT = BEXT * SHall * AV +I * G* SHall * AV + VOUT,0A
IN
(12)
Observable from Equation 12 is that the impact of an external field is an additional equivalent input current
signal, IBEXT, shown in Equation 13. This effective additional input current has no dependence on Hall or analog
circuitry sensitivity, so all gain variants have equivalent input-referred current error due to external magnetic
fields.
BEXT
IB
=
EXT
G
(13)
This additional current error generates a percentage error defined by Equation 14.
BEXT
G
eB (%) =
EXT
I
IN
(14)
8.2 Transient Response Parameters
The transient response of the TMCS1100-Q1 is impacted by the 250 kHz sampling rate as defined in Transient
Response. Figure 8-2 shows the TMCS1100-Q1 response to an input current step sufficient to generate a 1V
output change. The typical 4us sampling window can be observed as a periodic step. This sampling window
dominates the response of the device, and the response will have some probabilistic nature due to alignment of
the input step and the sampling window interval.
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90
75
60
45
30
15
0
4
3.5
3
2.5
2
1.5
1
IIN
V1
V2
-15
0.5
Time (4ms/div)
Figure 8-2. Transient Step Response
8.2.1 Slew Rate
Slew rate (SR) is defined as the VOUT rate of change for a single integration step’s output transition, as shown
in Figure 8-3. Because the device often requires two sampling windows to reach a full 90% settling of its final
value, this slew rate is not equal to the 10%-90% transition time for the full output swing.
Input Current
Input Current
Input Current
tr
tr
tr
90%
90%
90%
4ꢀs Sample
Window
4ꢀs Sample
Window
SR
4ꢀs Sample
Window
VOUT response
1V
1V
1V
VOUT response
SR
SR
tp
VOUT response
10%
tp
10%
tp
10%
Figure 8-3. Small Current Input Step Transient Response
8.2.2 Propagation Delay and Response Time
Propagation delay is the time period between the input current waveform reaching 10% of its final value and
VOUT reaching 10% of its final value. This propagation delay is heavily dependent upon the alignment of the
input current step and the sampling period of the TMCS1100-Q1, as shown for several different sampling
window cases in Figure 8-3.
Response time is the time period between the input current reaching 90% of its final value and the output
reaching 90% of its final value, for an input current step sufficient to cause a 1-V transition on the output. Figure
8-3 shows the response time of the TMCS1100-Q1 under three different time cases. Unless a step input occurs
directly during the beginning of one sampling window the response time will include two sampling intervals.
8.2.3 Current Overload Parameters
Current overload response parameters are the transient behavior of the TMCS1100-Q1 to an input current step
consistent with a short circuit or fault event. Tested amplitude is twice the full scale range of the device, or 10V /
Sensitivity in V/A. Under these conditions, the TMCS1100-Q1 output will respond faster than in the case of a
small input current step due to the higher input amplitude signal. Response time and propagation delay are
measured in a similar manner to the case of a small input current step, as shown in Figure 8-4.
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Input Current
tr
90%
û IIN
10 V / S
=
VOUT response
SR
10%
tp
Figure 8-4. Current Overload Transient Response
Current overload recovery time is the required time for the device output to exit a saturated condition and return
to normal operation. The transient response of the device during this recovery period from a current overload is
shown in Current Overload Response.
8.2.4 CMTI, Common-Mode Transient Immunity
CMTI is the capability of the device to tolerate a rising/falling voltage step on the input without disturbance on
the output signal. The device is specified for the maximum common-mode transition rate under which the output
signal will not experience a greater than 200-mV disturbance that lasts longer than 1 µs. Higher edge rates than
the specified CMTI can be supported with sufficient filtering or blanking time after common-mode transitions.
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8.3 Safe Operating Area
The isolated input current safe operating area (SOA) of the TMCS1100-Q1 is constrained by self-heating due
to power dissipation in the input conductor. Depending upon the use case, the SOA is constrained by multiple
conditions, including exceeding maximum junction temperature, Joule heating in the leadframe, or leadframe
fusing under extremely high currents. These mechanisms depend on pulse duration, amplitude, and device
thermal states.
Current SOA strongly depends on the thermal environment and design of the system-level board. Multiple
thermal variables control the transfer of heat from the device to the surrounding environment, including air
flow, ambient temperature, and printed-circuit board (PCB) construction and design. All ratings are for a single
TMCS1100-Q1 device on the TMCS1100EVM, with no air flow in the specified ambient temperature conditions.
Device use profiles must satisfy both continuous conduction and short-duration transient SOA capabilities for the
thermal environment under which the system will be operated.
8.3.1 Continuous DC or Sinusoidal AC Current
The longest thermal time constants of device packaging and PCBs are in the order of seconds; therefore,
any continuous DC or sinusoidal AC periodic waveform with a frequency higher than 1 Hz can be evaluated
based on the RMS continuous-current level. The continuous-current capability has a strong dependence upon
the operating ambient temperature range expected in operation. Figure 8-5 shows the maximum continuous
current-handling capability of the device on the TMCS1100EVM. Current capability falls off at higher ambient
temperatures because of the reduced thermal transfer from junction-to-ambient and increased power dissipation
in the leadframe. By improving the thermal design of an application, the SOA can be extended to higher currents
at elevated temperatures. Using larger and heavier copper power planes, providing air flow over the board, or
adding heat sinking structures to the area of the device can all improve thermal performance.
35
30
25
20
15
10
-55
-35
-15
5
25
45
65
85
105 125
Ambient Temperature (èC)
D012
Figure 8-5. Maximum Continuous RMS Current vs. Ambient Temperature
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8.3.2 Repetitive Pulsed Current SOA
For applications where current is pulsed between a high current and no current, the allowable capabilities
are limited by short-duration heating in the leadframe. The TMCS1100-Q1 can tolerate higher current ranges
under some conditions, however, for repetitive pulsed events, the current levels must satisfy both the pulsed
current SOA and the RMS continuous current constraint. Pulse duration, duty cycle, and ambient temperate all
impact the SOA for repetitive pulsed events. Maximum Repetitive Pulsed Current vs. Pulse Duration, Maximum
Repetitive Pulsed Current vs. Pulse Duration, Maximum Repetitive Pulsed Current vs. Pulse Duration, and
Maximum Repetitive Pulsed Current vs. Pulse Duration illustrate repetitive stress levels based on test results
from the TMCS1100EVM under which parametric performance and isolation integrity was not impacted post-
stress for multiple ambient temperatures. At high duty cycles or long pulse durations, this limit approaches the
continuous current SOA for a RMS value defined by Equation 15.
I
= I
* D
IN,RMS
IN,P
(15)
where
•
•
•
IIN,RMS is the RMS input current level
IIN,P is the pulse peak input current
D is the pulse duty cycle
250
200
150
100
50
160
140
120
100
80
1%
5%
10%
25%
50%
75%
1%
5%
10%
25%
50%
75%
60
40
20
0
0.001
0
0.001
0.01
0.1
Current Pulse Duration (s)
1
10
0.01
0.1
Current Pulse Duration (s)
1
10
D016
D017
TA = 25°C
TA = 85°C
Figure 8-6. Maximum Repetitive Pulsed Current vs. Figure 8-7. Maximum Repetitive Pulsed Current vs.
Pulse Duration Pulse Duration
140
120
100
80
120
100
80
60
40
20
0
1%
5%
10%
25%
50%
75%
1%
5%
10%
25%
50%
75%
60
40
20
0
0.001
0.01
0.1
Current Pulse Duration (s)
1
10
0.001
0.01
0.1
Current Pulse Duration (s)
1
10
D018
D019
TA = 105°C
TA = 125°C
Figure 8-8. Maximum Repetitive Pulsed Current vs. Figure 8-9. Maximum Repetitive Pulsed Current vs.
Pulse Duration
Pulse Duration
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8.3.3 Single Event Current Capability
Single higher-current events that are shorter duration can be tolerated by the TMCS1100-Q1, because the
junction temperature does not reach thermal equilibrium within the pulse duration. Figure 8-10 shows the short-
circuit duration curve for the device for single current-pulse events, where the leadframe resistance changes
after stress. This level is reached before a leadframe fusing event, but should be considered an upper limit for
short duration SOA. For long-duration pulses, the current capability approaches the continuous RMS limit at the
given ambient temperature.
1000
100
TA = 25°C
TA = 125°C
10
0.001
0.01
0.1
Pulse Duration (s)
1
10
D004
Figure 8-10. Single-Pulse Leadframe Capability
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9 Detailed Description
9.1 Overview
The TMCS1100-Q1 is a precision Hall-effect current sensor, featuring a 600-V basic isolation working voltage,
< 1% full-scale error across temperature, and an external reference voltage enabling unidirectional or
bidirectional current sensing Input current flows through a conductor between the isolated input current pins.
The conductor has a 1.8-mΩ resistance at room temperature for low power dissipation and a 20-A RMS
continuous current handling capability up to 105°C ambient temperature on the TMCS1100EVM. The low-ohmic
leadframe path reduces power dissipation compared to alternative current measurement methodologies, and
does not require any external passive components, isolated supplies, or control signals on the high-voltage
side. The magnetic field generated by the input current is sensed by a Hall sensor and amplified by a precision
signal chain. The device can be used for both AC and DC current measurements and has a bandwidth of 80
kHz. There are multiple fixed-sensitivity device variants for a wide option of linear sensing ranges, and the
TMCS1100-Q1 can operate with a low voltage supply from 3 V to 5.5 V. The TMCS1100-Q1 is optimized for
high accuracy and temperature stability, with both offset and sensitivity compensated across the entire operating
temperature range.
9.2 Functional Block Diagram
VS
Temperature
Compensation
----------------------
Offset Cancellation
Hall
Element
Bias
IN+
Precision
Amplifier
Output
Amplifier
VOUT
VREF
INœ
Reference
Sampling
GND
9.3 Feature Description
9.3.1 Current Input
Input current to the TMCS1100-Q1 passes through the isolated side of the package leadframe through the
IN+ and IN– pins. The current flow through the package generates a magnetic field that is proportional to the
input current, and measured by a galvanically isolated, precision, Hall sensor IC. As a result of the electrostatic
shielding on the Hall sensor die, only the magnetic field generated by the input current is measured, thus limiting
input voltage switching pass-through to the circuitry. This configuration allows for direct measurement of currents
with high-voltage transients without signal distortion on the current-sensor output. The leadframe conductor has
a nominal resistance of 1.8 mΩ at 25°C, and has a typical positive temperature coefficient as defined in the
Electrical Characteristics table.
9.3.2 Input Isolation
The separation between the input conductor and the Hall sensor die due to the TMCS1100-Q1 construction
provides inherent galvanic isolation between package pins 1-4 and pins 5-8. Insulation capability is defined
according to certification agency definitions and using industry-standard test methods as defined in the Insulation
Specifications table. Assessment of device lifetime working voltages follow the VDE 0884-11 standard for basic
insulation, requiring time-dependent dielectric breakdown (TDDB) data-projection failure rates of less than 1000
part per million (ppm), and a minimum insulation lifetime of 20 years. The VDE standard also requires an
additional safety margin of 20% for working voltage, and a 30% margin for insulation lifetime, translating into a
minimum required lifetime of 26 years at 509 VRMS for the TMCS1100-Q1.
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Figure 9-1 shows the intrinsic capability of the isolation barrier to withstand high-voltage stress over the lifetime
of the device. Based on the TDDB data, the intrinsic capability of these devices is 424 VRMS with a lifetime of
> 100 years. Other factors such as operating environment and pollution degree can further limit the working
voltage of the component in an end system.
Figure 9-1. Insulation Lifetime
9.3.3 High-Precision Signal Chain
The TMCS1100-Q1 uses a precision, low-drift signal chain with proprietary sensor linearization techniques to
provide a highly accurate and stable current measurement across the full temperature range of the device. The
device is fully tested and calibrated at the factory to account for any variations in either silicon or packaging
process variations. The full signal chain provides a fixed sensitivity voltage output that is proportional to the
current through the leadframe of the isolated input.
9.3.3.1 Temperature Stability
The TMCS1100-Q1 includes a proprietary temperature compensation technique which results in significantly
improved parametric drift across the full temperature range. This compensation technique accounts for changes
in ambient temperature, self-heating, and package stress. A zero-drift signal chain architecture and Hall sensor
temperature stabilization methods enable stable sensitivity and minimize offset errors across temperature, and
drastically improves system-level performance across the required operating conditions.
Figure 9-2 shows the offset error across the full device ambient temperature range. Figure 9-3 shows the typical
sensitivity. There are no other external components introducing errors sources; therefore, the high intrinsic
accuracy and stability over temperature directly translates to system-level performance. As a result of this high
precision, even a system with no calibration can reach < 1% of total error current-sensing capability.
80
60
0.8
0.6
0.4
0.2
0
A1
A2
A3
A4
A1
A2
A3
A4
40
20
0
-20
-40
-60
-80
-0.2
-0.4
-0.6
-0.8
-50
-25
0
25
Temperature (°C)
50
75
100
125
150
-50
-25
0
25
Temperature (°C)
50
75
100
125
150
Figure 9-2. Offset Error Drift Across Temperature
Figure 9-3. Sensitivity Drift Across Temperature
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9.3.3.2 Lifetime and Environmental Stability
The same compensation techniques used in the TMCS1100-Q1 to reduce temperature drift also greatly reduce
lifetime drift due to aging, stress, and environmental conditions. Typical magnetic sensors suffer from up to 2%
to 3% of sensitivity drift due to aging at high operating temperatures. The TMCS1100-Q1 has greatly improved
lifetime drift, as defined in the Electrical Characteristics for total sensitivity error measured after the worst
case stress test during a three lot AEC-Q100 qualification. All other stress tests prescribed by an AEC-Q100
qualification caused lower than the specified sensitivity error, and were within the bounds specified within the
Electrical Characteristics table. Figure 9-4 shows the total sensitivity error after the worst-case stress test, a
Highly Accelerated Stress Test (HAST) at 130°C and 85% relative humidity (RH), while Figure 9-5 and Figure
9-6 show the sensitivity and offset error drift after a 1000 hour, 125°C high temperature operating life stress
test as specified by AEC-Q100. This test mimics typical device lifetime operation, and shows the likely device
performance variation due to aging is vastly improved compared to typical magnetic sensors.
160
140
120
100
80
200
180
160
140
120
100
80
60
60
40
40
20
20
0
-1% -.8% -.6% -.4% -.2% 0% .2% .4% .6% .8% 1%
0
-1% -.8% -.6% -.4% -.2% 0% .2% .4% .6% .8% 1%
D020
D021
Sensitivity Drift (%)
Figure 9-4. Sensitivity Error After 130°C, 85% RH
HAST
Sensitivity Drift (%)
Figure 9-5. Sensitivity Error Drift After AEC-Q100
High Temperature Operating Life Stress Test
120
100
80
60
40
20
0
-50 -40 -30 -20 -10
0
10
20
30
40
50
D022
IOS Drift (mA)
Figure 9-6. Input-Referred Offset Drift After AEC-Q100 High Temperature Operating Life Stress Test
9.3.3.3 Frequency Response
The TMCS1100-Q1 signal chain has a spectral response atypical of a linear analog system due to its discrete
time sampling. The 250-kHz sampling interval implies an effective Nyquist frequency of 125 kHz, which limits
spectral response to below this frequency. Higher frequency content than this frequency will be aliased down to
lower spectrums.
The TMCS1100-Q1 bandwidth is defined by the –3-dB spectral response of the entire signal chain which is
constrained by the sampling frequency. Normalized gain and phase plots across frequency are shown below in
Figure 9-7 and Figure 9-8, all variants have the same bandwidth and phase response. Signal content beyond the
3-dB bandwidth level will still have significant fundamental frequency transmission through the signal chain, but
at increasing distortion levels
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4
3
30
0
2
-30
1
0
-60
-1
-2
-3
-4
-5
-90
-120
-150
-180
All gains 80kHz -3dB
-6
10
100
1k 10k
Frequency (Hz)
100k
1M
10
100
1k
Frequency (Hz)
10k
100k
Figure 9-7. Normalized Gain, All Variants
Figure 9-8. Normalized Phase, All Variants
9.3.3.4 Transient Response
The TMCS1100-Q1 signal chain includes a precision analog front end followed by a sampled integrator. At the
end of each integration cycle, the signal propagates to the output. Depending on the alignment of a change
in input current relative to the sampling window, the output might not settle to the final signal until the second
integration cycle. Figure 9-9 shows a typical output waveform response to a 10-kHz sine wave input current.
For a slowly varying input current signal, the output is a discrete time representation with a phase delay of the
integration sampling window. Adding a first order filter of 100 kHz effectively smooths the output waveform with
minimal impact to phase response.
5.5
5
6
VOUT
Input Current
VOUT, 100 kHz Filter
5
4.5
4
4
3
3.5
3
2
1
2.5
2
0
-1
-2
-3
-4
1.5
1
0.5
0
-5
.00025
0
.00005
.0001
.00015
.0002
Time (s)
D015
Figure 9-9. Response Behavior to 10-kHz Sine Wave Input Current
Figure 9-10 shows two transient waveforms to an input-current step event, but occurring at different times during
the sampling interval. In both cases, the full transition of the output takes two sampling intervals to reach the
final output value. The timing of the current event relative to the sampling window determines the proportional
amplitude of the first and second sampling intervals.
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90
75
60
45
30
15
0
4
3.5
3
2.5
2
1.5
1
IIN
V1
V2
-15
0.5
Time (4ms/div)
Figure 9-10. Transient Response to Input-Current Step Sufficient for 1-V Output Swing
The output value is effectively an average over the sampling window; therefore, a large-enough current transient
can drive the output voltage to near the full scale range in the first sample response. This condition is likely to
be true in the case of a short-circuit or fault event. Figure 9-11 shows an input-current step twice the full scale
measurable range with two output voltage responses illustrating the effect of the sampling window. The relative
timing and size of the input current transition determines both the time and amplitude of the first output transition.
In either case, the total response time is slightly longer than one integration period.
70
60
50
40
30
20
10
0
6
5
4
3
2
1
0
IIN
V1
V2
-1
-2
-10
Time (4ms/div)
Figure 9-11. Transient Response to a Large Input Current Step
9.3.4 External Reference Voltage Input
The reference voltage provided externally to the TMCS1100-Q1 on the VREF pin determines the zero current
output voltage, VOUT,0A. This zero-current output level along with sensitivity determine the measurable input
current range of the device, and allows for unidirectional or bidirectional sensing, as described in the Absolute
Maximum Ratings table. Figure 9-12 illustrates the transfer function of the TMCS1100A2-Q1 with varying VREF
voltages of 0 V, 1.25 V, and 2.5 V. By shifting the zero current output voltage of the device, the dynamic range of
measurable input current can be modified.
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5
4.5
4
3.5
3
2.5
2
1.5
1
VREF = 0 V
VREF = 1.25 V
VREF = 2.5 V
0.5
0
-25 -20 -15 -10 -5
0
5
10 15 20 25 30 35 40 45 50
Input Current (A)
D002
Figure 9-12. Output Voltage Relationship to Input Current With Varying VREF Voltages
The input voltage on this pin can be provided by any external voltage source or potential, such as a discrete
precision reference, a voltage divider, ADC reference, or ground. The VREF pin is sampled by the internal
circuitry at approximately 1 MHz, then buffered and provided to the signal chain of the device. An apparent DC
load of approximately 1 µA will be observed by the external reference. To prevent errors due to sampling settling,
keep the source impedance below the level specified in the Electrical Characteristics table.
9.3.5 Current-Sensing Measurable Ranges
The TMCS1100-Q1 can be configured to allow for bidirectional or unidirectional measurable current ranges
based on the external voltage on the VREF pin. The output voltage is limited by VOUT swing to either supply or
ground. Linear output swing range to both VS and GND is calculated by equations Equation 16 and Equation 17.
VOUT,max = VS – SwingVS
VOUT,min = SwingGND
(16)
(17)
Rearranging the transfer function of the device to solve for input current, and substituting VOUT,max and VOUT,min
yields the maximum and minimum measurable input current ranges as shown in Equation 18 and Equation 19.
IIN,MAX+ = (VOUT,max – VREF) / S
IIN,MAX- = (VREF – VOUT,min) / S
(18)
(19)
where
•
•
•
IIN,MAX+ is the maximum linear measurable positive input current.
IIN,MAX- is the maximum linear measurable negative input current.
S is the sensitivity of the device variant.
Setting VREF to the middle of the output swing range provides bidirectional measurement capability, whereas
setting VREF close to the ground provides a unidirectional measurement. Custom ranges with nonuniform
positive and negative input current ranges can be achieved by appropriately scaling the VREF potential relative to
the full output voltage range.
9.4 Device Functional Modes
9.4.1 Power-Down Behavior
As a result of the inherent galvanic isolation of the device, very little consideration must be paid to powering
down the device, as long as the limits in the Absolute Maximum Ratings table are not exceeded on any pins.
The isolated current input and the low-voltage signal chain can be decoupled in operational behavior, as either
can be energized with the other shut down, as long as the isolation barrier capabilities are not exceeded.
The low-voltage power supply can be powered down while the isolated input is still connected to an active
high-voltage signal or system.
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10 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
10.1 Application Information
The key feature sets of the TMCS1100-Q1 provide significant advantages in any application where an isolated
current measurement is required.
•
•
Galvanic isolation provides a high isolated working voltage and excellent immunity to input voltage transients.
Hall based measurement simplifies system level solution without the need for a power supply on the high
voltage (HV) side.
•
•
An input current path through the low impedance conductor minimizes power dissipation.
Excellent accuracy and low temperature drift eliminate the need for multipoint calibrations without sacrificing
system performance.
•
•
An external reference input maximizes flexibility for unidirectional or bidirectional measurement with custom
dynamic ranges, and improves accuracy at the system level.
A wide operating supply range enables a single device to function across a wide range of voltage levels.
These advantages increase system-level performance while minimizing complexity for any application where
precision current measurements must be made on isolated currents. Specific examples and design requirements
are detailed in the following section.
10.1.1 Total Error Calculation Examples
Total error can be calculated for any arbitrary device condition and current level. Error sources considered
should include input-referred offset current, power-supply rejection, input common-mode rejection, sensitivity
error, nonlinearity, VREF to VOUT gain error, and the error caused by any external fields. Compare each of these
error sources in percentage terms, as some are significant drivers of error and some have inconsequential
impact to current error. Offset (Equation 20), CMRR (Equation 22), PSRR (Equation 21), VREF gain error
(Equation 23), and external field error (Equation 24) are all referred to the input, and so, are divided by the actual
input current IIN to calculate percentage errors. For calculations of sensitivity error and nonlinearity error, the
percentage limits explicitly specified in the Electrical Characteristics table can be used.
IOS
eI (%) =
OS
I
IN
(20)
PSRR * (VS - 5)
S
ePSRR(%) =
I
IN
(21)
CMRR * VCM
eCMRR(%) =
I
IN
(22)
VS
RVRR * (VREF
S
-
)
2
eV (%) =
REF
I
IN
(23)
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BEXT
G
eB (%) =
EXT
I
IN
(24)
When calculating error contributions across temperature, only the input offset current and sensitivity error
contributions vary significantly. For determining offset error over a given temperature range (ΔT), use Equation
25 to calculate total offset error current. Sensitivity error is specified for both –40°C to 85°C and –40°C to 125°C.
The appropriate specification should be used based on application operating ambient temperature range.
mA
èC
≈
«
’
IOS,25èC + IOS,drift ∆
ì DT
÷
◊
eI
% =
)
(
OS,DT
I
IN
(25)
To accurately calculate the total expected error of the device, the contributions from each of the individual
components above must be understood in reference to operating conditions. To account for the individual error
sources that are statistically uncorrelated, a root sum square (RSS) error calculation should be used to calculate
total error. For the TMCS1100-Q1, only the input referred offset current (IOS), CMRR, and PSRR are statistically
correlated. These error terms are lumped in an RSS calculation to reflect this nature, as shown in Equation 26
for room temperature and Equation 27 for across a given temperature range. The same methodology can be
applied for calculating typical total error by using the appropriate error term specification.
+ ePSRR + eCMRR 2 + e
2 + e
2 + eS2 + eNL
2
eRSS(%) =
e
IOS
VREF
BEXT
(26)
+ ePSRR + eCMRR 2 + e
2 + e 2 + eS,DT2 + eNL
BEXT
2
eRSS,DT(%) =
e
IOS,DT
VREF
(27)
The total error calculation has a strong dependence on the actual input current; therefore, always calculate
total error across the dynamic range that is required. These curves asymptotically approach the sensitivity and
nonlinearity error at high current levels, and approach infinity at low current levels due to offset error terms with
input current in the denominator. Key figures of merit for any current-measurement system include the total error
percentage at full-scale current, as well as the dynamic range of input current over which the error remains
below some key level. Figure 10-1 illustrates the RSS maximum total error as a function of input current for a
TMCS1100A2 at room temperature and across the full temperature range with VS of 5 V.
10
RSS Max Error, 25°C
RSS Max Error, œ40°C to 85°C
9
RSS Max Error, œ40°C to 125°C
8
7
6
5
4
3
2
1
0
0
5
10 15
Input Current (A)
20
25
D007
Figure 10-1. RSS Error vs. Input Current
10.1.1.1 Room Temperature Error Calculations
For room-temperature total-error calculations, specifications across temperature and drift are ignored. As an
example, consider a TMCS1100-Q1 A1 with a supply voltage (VS) of 3.3 V, a VREF of 1.5 V, and a worst-case
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common-mode excursion of 600 V to calculate operating-point-specific parameters. Consider a measurement
error due to an external magnetic field of 30 µT, roughly the Earth's magnetic field strength. The full-scale current
range of the device in specified conditions is slightly greater than 28 A; therefore, calculate error at both 25
A and 12.5 A to highlight error dependence on the input-current level. Table 10-1 shows the individual error
components and RSS maximum total error calculations at room temperature under the conditions specified.
Relative to other errors, the additional error from CMRR is negligible, and can typically be ignored for total error
calculations.
Table 10-1. Total Error Calculation: Room Temperature Example
% MAX TOTAL
ERROR AT IIN = 12.5
A
% MAX TOTAL
ERROR AT IIN = 25 A
ERROR COMPONENT
SYMBOL
EQUATION
IOS
eI (%) =
Input offset error
eIos
0.24%
0.48%
OS
I
IN
PSRR * (VS - 5)
S
ePSRR(%) =
PSRR error
CMRR error
ePSRR
0.27%
0.01%
0.54%
I
IN
CMRR * VCM
eCMRR(%) =
eCMRR
0.02%
0.08%
I
IN
VS
RVRR * (VREF
-
)
2
VREF error
eVREF
S
0.04%
0.11%
eV (%) =
REF
I
IN
BEXT
G
External Field error
eBext
0.22%
eB (%) =
EXT
I
IN
Sensitivity error
eS
Specified in Electrical Characteristics
Specified in Electrical Characteristics
0.7%
0.7%
Nonlinearity error
eNL
0.05%
0.05%
+ ePSRR + eCMRR 2 + e
2 + e
VREF BEXT
2 + eS2 + eNL
2
RSS total error
eRSS
0.88%
1.28%
eRSS(%) =
e
IOS
10.1.1.2 Full Temperature Range Error Calculations
To calculate total error across any specific temperature range, Equation 26 and Equation 27 should be used for
RSS maximum total errors, similar to the example for room temperatures. Conditions from the example in Room
Temperature Error Calculations have been replaced with their respective equations and error components for a
–40°C to 85°C temperature range below in Table 10-2.
Table 10-2. Total Error Calculation: –40°C to 85°C Example
% MAX TOTAL
ERROR AT IIN = 12.5
A
% MAX TOTAL
ERROR AT IIN = 25 A
ERROR COMPONENT
SYMBOL
EQUATION
mA
èC
≈
«
’
IOS,25èC + IOS,drift ∆
ì DT
÷
◊
Input offset error
eIos,ΔT
0.28%
0.56%
eI
% =
)
(
OS,DT
I
IN
PSRR * (VS - 5)
S
ePSRR(%) =
PSRR error
ePSRR
0.27%
0.54%
I
IN
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Table 10-2. Total Error Calculation: –40°C to 85°C Example (continued)
% MAX TOTAL
ERROR AT IIN = 12.5
A
% MAX TOTAL
ERROR AT IIN = 25 A
ERROR COMPONENT
SYMBOL
EQUATION
CMRR * VCM
eCMRR(%) =
CMRR error
eCMRR
0.01%
0.02%
I
IN
VS
2
RVRR * (VREF
S
-
)
VREF error
eVREF
0.04%
0.08%
eV (%) =
REF
I
IN
BEXT
G
External Field error
eBext
0.11%
0.22%
eB (%) =
EXT
I
IN
Sensitivity error
eS,ΔT
eNL
Specified in Electrical Characteristics
Specified in Electrical Characteristics
0.85%
0.05%
0.85%
0.05%
Nonlinearity error
+ ePSRR + eCMRR 2 + eV 2 + eB 2 + eS,DT2 + eNL
1.03%
1.43%
2
RSS total error
eRSS,ΔT
eRSS,DT(%) =
e
IOS,DT
REF
EXT
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10.2 Typical Application
Inline sensing of inductive load currents, such as motor phases, provides significant benefits to the performance
of a control systems, allowing advanced control algorithms and diagnostics with minimal postprocessing. A
primary challenge to inline sensing is that the current sensor is subjected to full HV supply-level PWM transients
driving the load. The inherent isolation of an in-package Hall-effect current sensor topology helps overcome this
challenge, providing high common-mode immunity, as well as isolation between the high-voltage motor drive
levels and the low-voltage control circuitry. Figure 10-2 illustrates the use of the TMCS1100-Q1 in such an
application, driving the inductive load presented by a three phase motor.
5 V
VS
V+
VOUT
IN+
IN–
TMCS1100-Q1
GND
2.5 V
VREF
TMCS1100-Q1
TMCS1100-Q1
V-
Figure 10-2. Inline Motor Phase Current Sensing
10.2.1 Design Requirements
For current sensing of a three-phase motor application, make sure to provide linear sensing across the expected
current range, and make sure that the device remains within working thermal constraints. A single TMCS1100-
Q1 for each phase can be used, or two phases can be measured, and the third phase calculated on the motor-
controller host processor. For this example, consider a nominal supply of 5 V but a minimum of 4.9 V to include
for some supply variation. Maximum output swings are defined according to TMCS1100-Q1 specifications, and a
full-scale current measurement of ±20 A is required.
Table 10-3. Example Application Design Requirements
DESIGN PARAMETER
EXAMPLE VALUE
VS,nom
VS,min
IIN,FS
5 V
4.9 V
±20 A
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10.2.2 Detailed Design Procedure
The TMCS1100-Q1 application design procedure has two key design parameters: the sensitivity version chosen
(A1-A4) and the reference voltage input. Further consideration of noise and integration with an ADC can be
explored, but is beyond the scope of this application design example. The TMCS1100-Q1 transfer function is
effectively a transimpedance with a variable offset set by VREF, defined by Equation 28.
VOUT = I ìS + VREF
IN
(28)
Design of the sensing solution first focuses on maximizing the sensitivity of the device while maintaining linear
measurement over the expected current input range. The linear output voltage range is constrained by the
TMCS1100-Q1 linear swing to ground, SwingGND, and swing to supply, SwingVS. With the previous parameters,
the maximum linear output voltage range is the range between VOUT,max and VOUT,min, as defined by Equation 29
and Equation 30.
VOUT,max = VS,min - SwingV
S
(29)
VOUT,min = SwingGND
(30)
For a bidirectional current-sensing application, a sufficient linear output voltage range is required from VREF to
both ground and the power supply. Design parameters for this example application are shown in Table 10-4
along with the calculated output range.
Table 10-4. Example Application Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
SwingVS
0.2 V
SwingGND
0.05 V
VOUT,max
4.7 V
VOUT,min
0.05 V
VOUT,max - VOUT,min
4.65 V
These design parameters result in a maximum linear output voltage swing of 4.65 V. To determine which
sensitivity variant of the TMCS1100-Q1 most fully uses this linear range, calculate the maximum current range
by Equation 31 for a unidirectional current (IU,MAX), and Equation 32 for a bidirectional current (IB,MAX).
VOUT,max - VOUT,min
IU,MAX
=
SA<x>
(31)
(32)
VOUT,max - VOUT,min
IB,MAX
=
2ìSA<x>
where
SA<x> is the sensitivity of the relevant A1-A4 variant.
•
Table 10-5 shows such calculation for each gain variant of the TMCS1100-Q1 with the appropriate sensitivities.
Table 10-5. Maximum Full-Scale Current Ranges With 4.65-V Output Range
SENSITIVITY VARIANT
TMCS1100A1-Q1
TMCS1100A2-Q1
TMCS1100A3-Q1
TMCS1100A4-Q1
SENSITIVITY
IU,MAX
IB,MAX
±46.5 A
±23.2A
±11.6A
±5.8 A
50 mV/A
93 A
100 mV/A
200 mV/A
400 mV/A
46.5 A
23.2 A
11.6 A
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In general, select the highest sensitivity variant that provides for the desired full-scale current range. For the
design parameters in this example, the TMCS1100A2-Q1 with a sensitivity of 0.1 V/A is the proper selection
because the maximum-calculated ±23.2 A linear measurable range is sufficient for the desired ±20-A full-scale
current.
After selecting the appropriate sensitivity variant for the application, the zero-current reference voltage defined
by the VREF input pin is defined. Manipulating Equation 28 and using the linear range defined by VOUT,max
,
VOUT,min, and the full-scale input current, IIN,FS, calculate the maximum and minimum VREF voltages allowed to
remain within the linear measurement range, shown in Equation 33 and Equation 34.
VREF,max = VOUT,max - I
ìS
IN,FS
(33)
(34)
VREF,min = VOUT,min + I
ìS
IN,FS
Any value of VREF can be chosen between VREF,max and VREF,min to maintain the required linear sensing range.
If the allowable VREF range is not wide enough or does not include a desired VREF voltage, the analysis must
be repeated with a lower sensitivity variant of the TMCS1100-Q1. Equation 28 can be manipulated to solve for
the maximum allowable current in either direction by using the selected VREF voltage and the maximum linear
voltage ranges as in Equation 35 and Equation 36.
VOUT,max - VREF
IMAX+
=
S
(35)
VOUT,min - VREF
IMAX-
=
S
(36)
Table 10-6 shows the respective values for the example design parameters in Table 10-4. In this case, a VREF
of 2.5 V has been selected such that the zero current output is half of the nominal power supply. This example
VREF design value provides a linear input current-sensing range of –24.5 A to +22 A, with the positive current
defined as current flowing into the IN+ pin.
Table 10-6. Example VREF Limits and Associated Current Ranges
MAXIMUM LINEAR CURRENT SENSING RANGE
REFERENCE PARAMETER
EXAMPLE VALUE
IMAX+
26.5 A
20 A
IMAX–
–20 A
VREF,min
VREF,max
2.05 V
2.7 V
2.5 V
–26.5 A
–24.5 A
Selected VREF
22 A
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After selecting a VREF for the application design, an appropriate source must be defined. Multiple
implementations are possible, but could include:
•
•
•
•
Resistor divider from the supply voltage
Resistor divider from an ADC full-scale reference
Dedicated or preexisting voltage reference IC
DAC or reference voltage from a system microcontroller
Each of these options has benefits, and the error terms, noise, simplicity, and cost of each implementation must
be weighed. In the current design example, any of these options are potentially available as a 2.5-V VREF is
midrail of the power supply, a common IC reference voltage, and might already be available in the system. If the
primary consideration for the current application design is to maximize precision while minimizing temperature
drift and noise, a dedicated voltage reference must be chosen. For this case, the LM4030C-2.5 can be chosen
for to optimize system accuracy without significant cost addition. Figure 10-3 depicts the current-sense system
design as discussed.
5 V
IIN
VS
IN+
VOUT
To ADC / MCU
0.1 μF
2.5 V
TMCS1100-Q1
VREF
GND
IN–
LM4030C-2.5
0.15%, 30 ppm/ C
Figure 10-3. TMCS1100-Q1 Example Current-Sense System Design
11 Power Supply Recommendations
The TMCS1100-Q1 only requires a power supply (VS) on the low-voltage isolated side, which powers the analog
circuitry independent of the isolated current input. VS determines the full-scale output range of the analog
output VOUT, and can be supplied with any voltage between 3 V and 5.5 V. To filter noise in the power-supply
path, place a low-ESR decoupling capacitor of 0.1 µF between VS and GND pins as close as possible to the
supply and ground pins of the device. To compensate for noisy or high-impedance power supplies, add more
decoupling capacitance.
The TMCS1100-Q1 power supply VS can be sequenced independently of current flowing through the input.
However, there is a typical 25-ms delay between VS reaching the recommended operating voltage and the
analog output being valid. Within this delay VOUT transfers from a high impedance state to the active drive state,
during which time the output voltage could transition between GND and VS. If this behavior must be avoided, a
stable supply voltage to VS should be provided for longer than 25 ms prior to applying input current.
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12 Layout
12.1 Layout Guidelines
The TMCS1100-Q1 is specified for a continuous current handling capability on the TMCS1100EVM, which
uses 3-oz copper pour planes. This current capability is fundamentally limited by the maximum device junction
temperature and the thermal environment, primarily the PCB layout and design. To maximize current-handling
capability and thermal stability of the device, take care with PCB layout and construction to optimize the
thermal capability. Efforts to improve the thermal performance beyond the design and construction of the
TMCS1100EVM can result in increased continuous-current capability due to higher heat transfer to the ambient
environment. Keys to improving thermal performance of the PCB include:
•
•
•
•
Use large copper planes for both input current path and isolated power planes and signals.
Use heavier copper PCB construction.
Place thermal via farms around the isolated current input.
Provide airflow across the surface of the PCB.
The TMCS1100-Q1 senses external magnetic fields, so make sure to minimize adjacent high-current traces in
close proximity to the device. The input current trace can contribute additional magnetic field to the sensor if the
input current traces are routed parallel to the vertical axis of the package. Figure 12-1 illustrates the most optimal
input current routing into the TMCS1100-Q1. As the angle that the current approaches the device deviates from
0° to the horizontal axis, the current trace contributes some additional magnetic field to the sensor, increasing
the effective sensitivity of the device. If current must be routed parallel to the package vertical axis, move the
routing away from the package to minimize the impact to the sensitivity of the device. Terminate the input current
path directly underneath the package lead footprint, and use a merged copper input trace for both the IN+ and
IN– inputs.
IIN,}ꢀ
}
IN+
IN+
INœ
INœ
1
2
3
4
8
7
6
5
VS
IIN,0ꢀ
VOUT
VREF
GND
IIN,0ꢀ
}
IIN,}ꢀ
Figure 12-1. Magnetic Field Generated by Input Current Trace
In addition to thermal and magnetic optimization, make sure to consider the PCB design required creepage and
clearance for system-level isolation requirements. Maintain required creepage between solder stencils, as shown
in Figure 12-2, if possible. If not possible to maintain required PCB creepage between the two isolated sides at
board level, add additional slots or grooves to the board. If more creepage and clearance is required for system
isolation levels than is provided by the package, the entire device and solder mask can be encapsulated with an
overmold compound to meet system-level requirements.
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Cu Plane
Solder Mask Creepage
VS
Cu Plane
Cu Plane
IN+
VOUT
VREF
GND
INœ
Cu Plane
Figure 12-2. Layout for System Creepage Requirements
12.2 Layout Example
An example layout, shown in Figure 12-3, is from the TMCS1100EVM. Device performance is targeted for
thermal and magnetic characteristics of this layout, which provides optimal current flow from the terminal
connectors to the device input pins while large copper planes enhance thermal performance.
Figure 12-3. Recommended Board Top (Left) and Bottom (Right) Plane Layout
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13 Device and Documentation Support
13.1 Device Support
13.1.1 Development Support
For development tool support see the following:
•
•
•
TMCS1100EVM
TMCS1100 TI-TINA Model
TMCS1100 TINA-TI Reference Design
13.2 Documentation Support
13.2.1 Related Documentation
For related documentation see the following:
•
•
Texas Instruments, TMCS1100EVM User's Guide
Texas Instruments, Enabling Precision Current Sensing Designs with Nonratiometric Magnetic Current
Sensors
•
•
Texas Instruments, Low-Drift, Precision, In-Line Isolated Magnetic Motor Current Measurements
Texas Instruments, Isolation Glossary
13.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
13.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
13.5 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
13.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
13.7 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OUTLINE
D0008B
SOIC - 1.75 mm max height
SCALE 2.800
SMALL OUTLINE INTEGRATED CIRCUIT
C
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A
PIN 1 ID AREA
6X .050
[1.27]
8
1
2X
.189-.197
[4.81-5.00]
NOTE 3
.150
[3.81]
4X (0 -15 )
4
5
8X .012-.020
[0.31-0.51]
B
.150-.157
[3.81-3.98]
NOTE 4
.069 MAX
[1.75]
.010 [0.25]
C A B
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
[0.11-0.25]
0 - 8
.016-.050
[0.41-1.27]
DETAIL A
TYPICAL
.041
[1.04]
4221445/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15], per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
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EXAMPLE BOARD LAYOUT
D0008B
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.055)
[1.4]
8X (.061 )
[1.55]
SEE
DETAILS
SEE
DETAILS
SYMM
SYMM
1
1
8
8
8X (.024)
[0.6]
8X (.024)
[0.6]
SYMM
SYMM
(R.002 ) TYP
[0.05]
(R.002 )
[0.05]
TYP
5
5
4
4
6X (.050 )
[1.27]
6X (.050 )
[1.27]
(.213)
[5.4]
(.217)
[5.5]
HV / ISOLATION OPTION
.162 [4.1] CLEARANCE / CREEPAGE
IPC-7351 NOMINAL
.150 [3.85] CLEARANCE / CREEPAGE
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:6X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
EXPOSDE
METAL
EXPOSED
METAL
.0028 MIN
[0.07]
ALL AROUND
.0028 MAX
[0.07]
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4221445/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
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EXAMPLE STENCIL DESIGN
D0008B
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
8X (.055)
[1.4]
SYMM
SYMM
1
1
8
8
8X (.024)
[0.6]
8X (.024)
[0.6]
SYMM
SYMM
(R.002 ) TYP
[0.05]
(R.002 )
[0.05]
TYP
5
5
4
4
6X (.050 )
[1.27]
6X (.050 )
[1.27]
(.217)
[5.5]
(.213)
[5.4]
HV / ISOLATION OPTION
.162 [4.1] CLEARANCE / CREEPAGE
IPC-7351 NOMINAL
.150 [3.85] CLEARANCE / CREEPAGE
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.127 MM] THICK STENCIL
SCALE:6X
4221445/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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PACKAGE OPTION ADDENDUM
www.ti.com
26-Jun-2021
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TMCS1100A1QDRQ1
TMCS1100A2QDRQ1
TMCS1100A3QDRQ1
TMCS1100A4QDRQ1
ACTIVE
ACTIVE
ACTIVE
ACTIVE
SOIC
SOIC
SOIC
SOIC
D
D
D
D
8
8
8
8
2500 RoHS & Green
2500 RoHS & Green
2500 RoHS & Green
2500 RoHS & Green
SN
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
-40 to 125
-40 to 125
-40 to 125
-40 to 125
Q100A1
SN
SN
SN
Q100A2
Q100A3
Q100A4
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
26-Jun-2021
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TMCS1100-Q1 :
Catalog : TMCS1100
•
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
•
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
27-Jun-2021
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TMCS1100A1QDRQ1
TMCS1100A2QDRQ1
TMCS1100A3QDRQ1
TMCS1100A4QDRQ1
SOIC
SOIC
SOIC
SOIC
D
D
D
D
8
8
8
8
2500
2500
2500
2500
330.0
330.0
330.0
330.0
12.4
12.4
12.4
12.4
6.4
6.4
6.4
6.4
5.2
5.2
5.2
5.2
2.1
2.1
2.1
2.1
8.0
8.0
8.0
8.0
12.0
12.0
12.0
12.0
Q1
Q1
Q1
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
27-Jun-2021
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TMCS1100A1QDRQ1
TMCS1100A2QDRQ1
TMCS1100A3QDRQ1
TMCS1100A4QDRQ1
SOIC
SOIC
SOIC
SOIC
D
D
D
D
8
8
8
8
2500
2500
2500
2500
350.0
350.0
350.0
350.0
350.0
350.0
350.0
350.0
43.0
43.0
43.0
43.0
Pack Materials-Page 2
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AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you
permission to use these resources only for development of an application that uses the TI products described in the resource. Other
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applicable warranties or warranty disclaimers for TI products.IMPORTANT NOTICE
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Copyright © 2021, Texas Instruments Incorporated
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