TMS626812B [TI]
1,048,576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES; 1,048,576 8位× 2 -BANK同步动态随机存取存储器
| 型号： | TMS626812B |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 1,048,576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
| 文件： | 总40页 (文件大小：611K) |
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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
TMS626812B
DGE PACKAGE
( TOP VIEW )
Organization
1048576 by 8 Bits by 2 Banks
3.3-V Power Supply (±10% Tolerance)
Two Banks for On-Chip Interleaving
(Gapless Accesses)
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
V
V
SS
DQ7
CC
2
DQ0
High Bandwidth – Up to 125-MHz Data
Rates
3
V
V
SSQ
DQ6
SSQ
DQ1
4
CAS Latency (CL) Programmable to
2 or 3 Cycles From Column-Address Entry
5
V
V
CCQ
DQ5
CCQ
DQ2
6
Burst Sequence Programmable to Serial or
Interleave
7
V
V
SSQ
DQ4
SSQ
DQ3
8
Burst Length Programmable to 1, 2, 4, or 8
9
V
V
CCQ
CCQ
NC
Chip Select and Clock Enable for Enhanced
System Interfacing
10
11
12
13
14
15
16
17
18
19
20
21
22
NC
NC
DQM
CLK
CKE
NC
A9
NC
W
Cycle-by-Cycle DQ Bus Mask Capability
Auto-Refresh and Self-Refresh Capabilities
4K Refresh (Total for Both Banks)
CAS
RAS
CS
High-Speed, Low-Noise, Low-Voltage TTL
(LVTTL) Interface
A11
A10
A0
A8
Power-Down Mode
A7
Compatible With JEDEC Standards
Pipeline Architecture
A1
A6
A2
A5
Temperature Ranges
Operating, 0°C to 70°C
Storage, – 55°C to 150°C
A3
A4
V
V
SS
CC
Intel PC100 Compliant (-8A, -8, and
-10 Devices)
PIN NOMENCLATURE
A0–A10 Address Inputs
Performance Ranges:
A0–A10 Row Addresses
SYNCHRONOUS
CLOCK
CYCLE TIME
ACCESS TIME
(CLOCK TO
OUTPUT)
REFRESH
TIME
INTERVAL
A0–A8 Column Addresses (for TMS626812B)
A10 Automatic-Precharge Select
Bank Select
Column-Address Strobe
Clock Enable
A11
CAS
CKE
CLK
CS
t
t
t
t
AC2
(CL=2)
CK3
†
CK2
AC3
(CL=2)
(CL=3)
(CL =3)
’626812B-8
’626812B-8A
’626812B-10
8 ns
10 ns
15 ns
15 ns
6 ns
6 ns
6 ns
7 ns
64 ms
64 ms
64 ms
System Clock
Chip Select
8 ns
10 ns
7.5 ns
7.5 ns
DQ[0:7] SDRAM Data Input/Output (TMS626812B)
DQM
NC
RAS
Data-Input/Data-Output Mask Enable
No External Connect
Row-Address Strobe
Power Supply (3.3-V Typical)
Power Supply for Output Drivers
(3.3-V Typical)
†
CL = CAS latency
V
V
CC
CCQ
V
V
W
Ground
Ground for Output Drivers
Write Enable
SS
SSQ
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
description
The TMS626812B is a high-speed, 16777216-bit synchronous dynamic random-access memory (SDRAM)
device organized as follows:
Two banks of 1048576 words with 8 bits per word (TMS626812B)
All inputs and outputs of the TMS626812B series are compatible with the LVTTL interface.
The SDRAM employs state-of-the-art technology for high performance, reliability, and low power. All inputs and
outputs are synchronized with the CLK input to simplify system design and enhance the use with high-speed
microprocessors and caches.
The TMS626812B SDRAM is available in a 400-mil, 44-pin surface-mount thin small–outine package (TSOP)
(DGE suffix).
functional block diagram
CLK
CKE
Array Bank T
CS
DQM
DQ
Buffer
Control
RAS
CAS
W
8
DQ0–DQ7
Array Bank B
A0–A11
12
Mode Register
operation
All inputs of the ’626812B SDRAM are latched on the rising edge of the system (synchronous) clock. The
outputs, DQx, also are referenced to the rising edge of CLK. The ’626812B has two banks that are accessed
independently. A bank must be activated before it can be accessed (read from or written to). Refresh cycles
refresh both banks alternately.
Six basic commands or functions control most operations of the ’626812B:
Bank activate/row-address entry
Column-address entry/write operation
Column-address entry/read operation
Bank deactivate
Auto-refresh
Self-refresh
2
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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
operation (continued)
Additionally, operations can be controlled by three methods: using chip select (CS) to select/deselect the
devices, using DQM to enable/mask the DQ signals on a cycle-by-cycle basis, or using CKE to suspend the
CLK input. The device contains a mode register that must be programmed for proper operation.
Table 1, Table 2, and Table 3 show the various operations that are available on the ’626812B. These function
tables identify the command and/or operations and their respective mnemonics. Each table is followed by a
legend that explains the abbreviated symbols. An access operation refers to any read or write command in
progress at cycle n. Access operations include the cycle upon which the read or write command is entered and
all subsequent cycles through the completion of the access burst.
†
Table 1. Basic Command Function Table
STATE OF
BANK(S)
‡
COMMAND
CS
RAS
CAS
W
A11
A10
A0–A9
MNEMONIC
A0–A6 = V
A7–A8 = 0
A9 = V
T = deac
B = deac
Mode register set
L
L
L
L
X
X
MRS
Bank deactivate (precharge)
Deactivate all banks
X
L
L
L
L
L
L
H
H
H
L
L
L
BS
X
L
H
V
L
X
X
V
V
DEAC
DCAB
ACTV
WRT
X
Bank activate/row-address entry
Column-address entry/write operation
SB = deac
SB = actv
L
H
L
BS
BS
H
Column-address entry/write operation
with automatic deactivate
SB = actv
SB = actv
SB = actv
L
L
L
H
H
H
L
L
L
L
H
H
BS
BS
BS
H
L
V
V
V
WRT-P
READ
Column-address entry/read operation
Column-address entry/read operation
with automatic deactivate
H
READ-P
No operation
X
X
L
H
X
H
X
H
X
X
X
X
X
X
X
NOOP
DESL
Control-input inhibit /no operation
H
T = deac
B = deac
§
Auto-refresh
L
L
L
H
X
X
X
REFR
†
For exception of these commands on cycle n, one of the following must be true:
– CKE(n–1) must be high.
– t
– t
must be satisfied for power-down exit.
CESP
CESP
and t
must be satisfied for self-refresh exit.
RC
must be satisfied for clock-suspend exit.
CLE
– t and n
IS
DQM(n) is a don’t care.
‡
§
All other unlisted commands are considered vendor-reserved commands or illegal commands.
Auto-refresh or self-refresh entry requires that all banks be deactivated or be in an idle state prior to the command entry.
Legend:
n
L
H
X
V
T
B
actv
deac
BS
SB
=
=
=
=
=
=
=
=
=
=
=
CLK cycle number
Logic low
Logic high
Don’t care, either logic low or logic high
Valid
Bank T
Bank B
Activated
Deactivated
Logic high to select bank T; logic low to select bank B
Bank selected by A11 at cycle n
3
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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
operation (continued)
†
Table 2. Clock-Enable (CKE) Command Function Table
CKE
(n–1)
CKE
(n)
CS
(n)
RAS
(n)
CAS
(n)
W
(n)
‡
COMMAND
STATE OF BANK(S)
MNEMONIC
SLFR
T = deac
B = deac
Self-refresh entry
H
H
L
L
L
L
L
H
X
¶
¶
T = no access operation
B = no access operation
§
Power-down entry on cycle (n+1)
X
X
X
PDE
L
L
H
H
L
H
X
H
X
H
X
—
—
T = self-refresh
B = self-refresh
Self-refresh exit
H
T = power down
B = power down
#
Power-down exit
L
H
L
H
L
X
X
X
X
X
X
X
X
X
X
X
X
—
HOLD
—
¶
¶
T = access operation
B = access operation
CLK suspend on cycle (n+1)
¶
¶
T = access operation
B = access operation
CLK suspend exit on cycle (n+1)
H
†
‡
§
¶
For execution of these commands, A0–A11(n) and DQM(n) are don’t care entries.
All other unlisted commands are considered as vendor-reserved or illegal commands.
On cycle n, the device executes the respective command (listed in Table 1). On cycle (n+1), the device enters power-down mode.
A bank is no longer in an access operation one cycle after the last data-out cycle of a read operation, and two cycles after the last data-in cycle
of a write operation. Neither the PDE nor the HOLD command is allowed on the cycle immediately following the last data-in cycle of a write
operation.
#
If setup time from CKE high to the next CLK high satisfies t
, the device executes the respective command (listed in Table 1). Otherwise,
CESP
either the DESL or the NOOP command must be applied before any other command.
Legend:
n
L
H
X
T
B
deac
=
=
=
=
=
=
=
CLK cycle number
Logic low
Logic high
Don’t care, either logic low or logic high
Bank T
Bank B
Deactivated
4
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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
operation (continued)
†
Table 3. Data-Mask (DQM) Command Function Table
DQM
(n)
DATA IN
(n)
DATA OUT
(n+2)
‡
COMMAND
STATE OF BANK(S)
MNEMONIC
T = deac
and
B = deac
—
—
X
X
N/A
N/A
Hi-Z
Hi-Z
—
T = actv
and
B = actv
—
§
(no access operation)
T = write
or
B = write
Data-in enable
Data-in mask
L
H
L
V
N/A
N/A
V
ENBL
MASK
ENBL
MASK
T = write
or
B = write
M
T = read
or
B = read
Data-out enable
Data-out mask
N/A
N/A
T = read
or
H
Hi-Z
B = read
†
For exception of these commands on cycle n, one of the following must be true:
– CKE(n–1) must be high.
– t
– t
must be satisfied for power-down exit.
CESP
CESP
IS
and t
must be satisfied for self-refresh exit.
RC
must be satisfied for clock-suspend exit.
CLE
– t and n
CS(n), RAS(n), CAS(n), W(n), and A0–A11(n) are don’t care except for interrupt conditions.
All other unlisted commands are considered vendor-reserved commands or illegal commands.
A bank is no longer in an access operation one cycle after the last data-out cycle of a read operation, and two cycles after the last data-in cycle
of a write operation. Neither the PDE nor the HOLD command is allowed on the cycle immediately following the last data-in cycle of a write
operation.
‡
§
Legend:
n
=
=
=
=
=
=
=
=
=
=
=
=
=
=
CLK cycle number
Logic low
Logic high
High-impedance state
Don’t care, either logic low or logic high
Valid
Masked input data
Not applicable
Bank T
Bank B
Activated
Deactivated
L
H
Hi-Z
X
V
M
N/A
T
B
actv
deac
write
read
Activated and accepting data inputs on cycle n
Activated and delivering data outputs on cycle (n + 2)
5
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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
burst sequence
All data for the ’626812B are written or read in a burst fashion — that is, a single starting address is entered
into the device and the ’626812B internally accesses a sequence of locations based on that starting address.
After the first access, some subsequent accesses can be at preceding, as well as succeeding, column
addresses, depending on the starting address entered. This sequence can be programmed to follow either a
serialburstoraninterleaveburst(seeTable 4, Table 5, and Table 6). The length of the burst can be programmed
to be 1, 2, 4, or 8 accesses (see the section on setting the mode register). After a read burst is complete (as
determined by the programmed burst length), the outputs are in the high-impedance state until the next read
access is initiated.
Table 4. 2-Bit Burst Sequences
INTERNAL COLUMN ADDRESS A0
DECIMAL
BINARY
START
2ND
START
2ND
0
1
0
1
1
0
1
0
0
1
0
1
1
0
1
0
Serial
Interleave
Table 5. 4-Bit Burst Sequences
INTERNAL COLUMN ADDRESS A0–A1
DECIMAL BINARY
START
2ND
3RD
2
4TH
3
START
00
2ND
3RD
10
11
4TH
11
0
1
2
3
0
1
2
3
1
2
3
0
1
0
3
2
01
10
11
00
01
00
11
10
3
0
01
00
01
10
11
Serial
0
1
10
00
01
10
11
1
2
11
2
3
00
3
2
01
10
01
00
Interleave
0
1
10
00
01
1
0
11
6
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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
burst sequence (continued)
Table 6. 8-Bit Burst Sequences
INTERNAL COLUMN ADDRESS A0–A2
DECIMAL
BINARY
START 2ND 3RD 4TH 5TH 6TH 7TH 8TH START 2ND 3RD 4TH 5TH 6TH 7TH 8TH
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
0
1
0
3
2
5
4
7
6
2
3
4
5
6
7
0
1
2
3
0
1
6
7
4
5
3
4
5
6
7
0
1
2
3
2
1
0
7
6
5
4
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
5
6
7
0
1
2
3
4
5
4
7
6
1
0
3
2
6
7
0
1
2
3
4
5
6
7
4
5
2
3
0
1
7
0
1
2
3
4
5
6
7
6
5
4
3
2
1
0
000
001
010
011
100
101
110
111
000
001
010
011
100
101
110
111
001
010
011
100
101
110
111
000
001
000
011
010
101
100
111
110
010 011 100 101 110 111
011 100 101 110 111 000
100 101 110 111 000 001
101 110 111 000 001 010
Serial
110
111
111 000 001 010 011
000 001 010 011 100
000 001 010 011 100 101
001 010 011 100 101 110
010 011 100 101 110 111
011 010 101 100 111 110
000 001 110 111 100 101
001 000 111 110 101 100
Interleave
110
111
111 000 001 010 011
110 001 000 011 010
100 101 010 011 000 001
101 100 011 010 001 000
latency
The beginning data-out cycle of a read burst can be programmed to occur two or three CLK cycles after the read
command (see the section on setting the mode register). This feature allows adjustment of the device so that
it operates using the capability to latch the data output from the ’626812B. The delay between the READ
command and the beginning of the output burst is known as CAS latency. After the initial output cycle begins,
the data burst occurs at the CLK frequency without any intervening gaps. Use of minimum read latencies is
restricted, based on the maximum frequency rating of the ’626812B.
There is no latency for data-in cycles (write latency). The first data-in cycle of a write burst is entered at the same
rising edge of CLK that the WRT command is entered. The write latency is fixed and is not determined by the
contents of the mode register.
two-bank operation
The ’626812B contains two independent banks that can be accessed individually or in an interleaved fashion.
Eachbank must be activated with a row address before it can be accessed. Each bank must then be deactivated
before it can be activated again with a new row address. The bank-activate/row-address-entry command
(ACTV) is entered by holding RAS low, CAS high, W high, and A11 valid on the rising edge of CLK. A bank can
be deactivated either automatically during a READ-P or a WRT-P command or by using the bank-deactivate
command (DEAC). Both banks can be deactivated at once by using the DCAB command (see Table 1 and the
section on bank deactivation).
7
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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
two-bank row-access operation
The two-bank feature allows access of information on random rows at a higher rate of operation than is possible
with a standard DRAM by activating one bank with a row address and, while the data stream is being accessed
to/from that bank, activating the second bank with another row address. When the data stream to or from the
first bank is completed, the data stream to or from the second bank can begin without interruption. After the
second bank is activated, the first bank can be deactivated to allow the entry of a new row address for the next
round of accesses. In this manner, operation can continue in an interleaved fashion. Figure 24 shows an
example of two-bank row-interleaving read bursts with automatic deactivate for a CAS latency of three and a
burst length of eight.
two-bank column-access operation
The availability of two banks allows the access of data from random starting columns between banks at a higher
rate of operation. After activating each bank with a row address (ACTV command), A11 can be used to alternate
READ or WRT commands between the banks to provide gapless accesses at the CLK frequency, provided all
specified timing requirements are met. Figure 25 is an example of two-bank column-interleaving read bursts
for a CAS latency of three and a burst length of two.
bank deactivation (precharge)
Both banks can be simultaneously deactivated (placed in precharge) by using the DCAB command. A single
bank can be deactivated by using the DEAC command. The DEAC command is entered identically to the DCAB
command except that A10 must be low and A11 is used to select the bank to be precharged (see Table 1).
A bank can also be deactivated automatically by using A10 during a read or write command. If A10 is held high
during the entry of a read or write command, the accessed bank (selected by A11) is automatically deactivated
upon completion of the access burst. If A10 is held low during the entry of a read or write command, that bank
remains active following the burst. The read and write commands with automatic deactivation are signified as
READ-P and WRT-P, respectively.
chip select (CS)
CS can be used to select or deselect the ’626812B for command entry, which can be required for multiple
memory-device decoding. If CS is held high on the rising edge of CLK (DESL command), the device does not
respond to RAS, CAS, or W until the device is selected again by holding CS low on the rising edge of CLK. Any
other valid command can be entered simultaneously on the same rising CLK edge of the select operation. The
device can be selected/deselected on a cycle-by-cycle basis (see Table 1 and Table 2). The use of CS does
not affect an access burst that is in progress; the DESL command can restrict only RAS, CAS, and W inputs
to the ’626812B.
data mask
The MASK command or its opposite, the data-in enable (ENBL) command (see Table 3), is performed on a
cycle-by-cycle basis to gate any data cycle within a read burst or a write burst. The application of DQM to a write
bursthasnolatency(n
=0cycle), buttheapplicationofDQMtoareadbursthasalatencyofn
=2cycles.
DID
DOD
During a write burst, if DQM is held high on the rising edge of CLK, the data input is ignored on that cycle. When
DQM is held high n cycles after the rising edge of the CLK during a read burst, the data output goes to the
DOD
high-impedance state. Figure 16 and Figure 28 show examples of data-mask operations.
CLK suspend/power-down mode
For normal device operation, CKE should be held high to enable CLK. If CKE goes low during the execution
of a READ (READ-P) or WRT (WRT-P) operation, the state of the DQ bus at the immediate next rising edge
of CLK is frozen at its current state, and no further inputs are accepted until CKE returns high. This is known
8
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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
CLK suspend/power-down mode (continued)
asaCLK-suspendoperationanditsexecutionindicatesaHOLDcommand. Thedeviceresumesoperationfrom
the point where it was placed in suspension, beginning with the second rising edge of CLK after CKE returns
high.
If CKE is brought low when no read or write command is in progress, the device enters power-down mode. If
both banks are deactivated when power-down mode is entered, power consumption is reduced to a minimum.
Power-down mode can be used during row-active or auto-refresh periods to reduce input buffer power. After
power-down mode is entered, no further inputs are accepted until CKE returns high. To ensure that data in the
device remains valid during the power-down mode, the self-refresh command (SLFR) must be executed
concurrently with the power-down entry (PDE) command. When exiting power-down mode, new commands
can be entered on the first CLK edge after CKE returns high, provided that the setup time (t
) is satisfied.
CESP
Table 2 shows the command configuration for a CLK suspend/power-down operation. Figure 17, Figure 18,
and Figure 31 show examples of the procedure.
setting the mode register
The ’626812B contains a mode register that must be programmed with the CAS latency, the burst type, and the
burst length. This is accomplished by executing a mode-register set (MRS) command with the information
enteredonaddresslinesA0–A9. Alogic0mustbeenteredonA7andA8, butA10andA11aredon’t-careentries
for the ’626812B. When A9=1, the write-burst length is always 1. When A9=0, the write-burst length is defined
by A0–A2. Figure 1 shows the valid combinations for a successful MRS command. Only valid addresses allow
the mode register to be changed. If the addresses are not valid, the previous contents of the mode register
remain unaffected. The MRS command is executed by holding RAS, CAS, and W low, and the input-mode word
valid on A0–A9 on the rising edge of CLK (see Table 1). The MRS command can be executed only when both
banks are deactivated.
A11
A10
A9
A8
0
A7
0
A6
A5
A4
A3
A2
A1
A0
Reserved
0
1
=
=
Serial
Interleave
(burst type)
†
§
REGISTER BITS
REGISTER BITS
REGISTER BIT
A9
WRITE-BURST
LENGTH
CAS
LATENCY
BURST
LENGTH
‡
A6
A5
A4
A2
A1
A0
0
0
0
0
0
0
1
1
0
1
0
1
1
2
4
8
0
1
A2–A0
1
0
0
1
1
0
1
2
3
†
‡
§
All other combinations are reserved.
Refer to timing requirements for minimum valid-read latencies based on maximum frequency rating.
All other combinations are reserved.
Figure 1. Mode-Register Programming
9
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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
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refresh
The ’626812B must be refreshed such that all 4096 rows are accessed within t
(see timing requirements)
REF
ordatacannotberetained. RefreshcanbeaccomplishedbyperformingaseriesofACTVandDEACcommands
to every row in both banks, by performing 4096 auto-refresh (REFR) commands, or by placing the device in
self-refresh mode. Regardless of the method used, all rows must be refreshed before t
has expired.
REF
auto-refresh (REFR)
Before performing a REFR command, both banks must be deactivated (placed in precharge). To enter a REFR
command, RAS and CAS must be low and W must be high on the rising edge of CLK (see Table 1). The refresh
address is generated internally such that after 4096 REFR commands, both banks of the ’626812B have been
refreshed. The external address and bank select (A11) are ignored. The execution of a REFR command
automatically deactivates both banks upon completion of the internal auto-refresh cycle, allowing consecutive
REFR-only commands to be executed, if desired, without any intervening DEAC commands. The REFR
commands do not necessarily have to be consecutive, but all 4096 must be completed before t
expires.
REF
self refresh (SLFR)
To enter self refresh, both banks of the ’626812B must first be deactivated and a SLFR command must be
executed (see Table 2). The SLFR command is identical to the REFR command except that CKE is low. For
proper entry of the SLFR command, CKE is brought low for the same rising edge of CLK that RAS and CAS
are low and W is high. CKE must be held low to stay in self-refresh mode. In the self-refresh mode, all refreshing
signals are generated internally for both banks with all external signals (except CKE) being ignored. Data is
retained by the device automatically for an indefinite period when power is maintained and power consumption
is reduced to a minimum. To exit self-refresh mode, CKE must be brought high. New commands may be issued
only after t has expired. If CLK is made inactive during self refresh, it must be returned to an active and stable
RC
condition before CKE is brought high to exit self refresh (see Figure 19).
Upon exiting self refresh, 4096 REFR commands must be executed before continuing with normal device
operations. This ensures that the SDRAM is fully refreshed.
interrupted bursts
A read burst or write burst can be interrupted before the burst sequence has been completed with no adverse
effects to the operation, by entering certain superseding commands (see Table 7 and Table 8), provided that
all timing requirements are met. A DEAC command is considered an interrupt only if it is issued to the same
bank as the preceding READ or WRT command. The interruption of READ-P or WRT-P operations is not
supported.
10
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TMS626812B
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SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
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interrupted bursts (continued)
Table 7. Read-Burst Interruption
INTERRUPTING
COMMAND
EFFECT OR NOTE ON USE DURING READ BURST
Current output cycles continue until the programmed latency from the superseding READ (READ-P) command is
met and new output cycles begin (see Figure 2).
READ, READ-P
WRT, WRT-P
DEAC, DCAB
The WRT (WRT-P) command immediately supersedes the read burst in progress. To avoid data contention, DQM
must be high before the WRT (WRT-P) command to mask output of the read burst on cycles (n
CCD
–1), n , and
CCD
(n
CCD
+1), assuming that there is any output on these cycles (see Figure 3).
The DQ bus is in the high-impedance state when n
whichever occurs first (see Figure 4).
cycles are satisfied or when the read burst completes,
HZP
n
CCD
= 1 Cycle
CLK
Output Burst for the
Interrupting READ
Command Begins Here
READ Command
at Column Address C0
Interrupting
READ Command
at Column Address C1
DQ
C0
C1
C1 + 1
C1 + 2
NOTE A: For these examples, assume CAS latency = 3 and burst length = 4.
Figure 2. Read Burst Interrupted by Read Command
11
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interrupted bursts (continued)
n
CCD
= 5 Cycles
CLK
Interrupting
READ Command
WRT Command
DQ
Q
D
D
See Note B
DQM
NOTES: A. For this example, assume CAS latency = 3 and burst length = 4.
B. DQM must be high to mask output of the read burst on cycles (n
– 1), n
CCD
, and (n + 1).
CCD
CCD
Figure 3. Read Burst Interrupted by Write Command
n
CCD
= 2 Cycles
n
HZP3
CLK
READ Command
Interrupting
DEAC/DCAB
Command
Q
Q
DQ
NOTE A: For this example, assume CAS latency = 3 and burst length = 4.
Figure 4. Read Burst Interrupted by DEAC Command
12
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interrupted bursts (continued)
Table 8. Write-Burst Interruption
INTERRUPTING
COMMAND
EFFECT OR NOTE ON USE DURING WRITE BURST
READ, READ-P
WRT, WRT-P
Data in on the previous cycle is written; however, no further data in is accepted (see Figure 5).
The new WRT (WRT-P) command and data in immediately supersede the write burst in progress (see Figure 6).
The DEAC/DCAB command immediately supersedes the write burst in progress. DQM must be used to mask the
DEAC, DCAB
DQ bus such that the write recovery specification (t
) is not violated by the interrupt (see Figure 7).
WR
n
CCD
= 1 Cycle
CLK
WRT
READ
Command
Command
DQ
D
Q
Q
Q
NOTE A: For these examples, assume CAS latency = 3 and burst length = 4.
Figure 5. Write Burst Interrupted by Read Command
13
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interrupted bursts (continued)
n
CCD
= 2 Cycles
CLK
WRT Command at
Column Address C0
Interrupting
WRT Command
at Column Address C1
C0
C0 + 1
C1
C1 + 1
C1 + 2
C1 + 3
DQ
NOTE A: For this example, assume burst length = 4.
Figure 6. Write Burst Interrupted by Write Command
n
CCD
= 3 Cycles
CLK
WRT Command
Interrupting
DEAC or DCAB
Command
Ignored
DQ
D
D
Ignored
t
WR
DQM
NOTE A: For this example, assume burst length = 4.
Figure 7. Write Burst Interrupted by DEAC/DCAB Command
power-up sequence
DeviceinitializationmustbeperformedafterapoweruptothefullV level. Afterpowerisestablished, a200-µs
CC
interval is required (with no inputs other than CLK). After this interval, both banks of the device must be
deactivated. Eight REFR commands must be performed and the mode register must be set to complete the
device initialization.
14
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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
†
absolute maximum ratings over ambient temperature range (unless otherwise noted)
Supply voltage range, V
Supply voltage range for output drivers, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.5 V to 4.6 V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.5 V to 4.6 V
CCQ
Voltage range on any pin (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.5 V to 4.6 V
Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W
Ambient temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
A
stg
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 150°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to V
.
SS
recommended operating conditions (see Notes 2 and 3)
MIN
3
NOM
3.3
3.3
0
MAX
3.6
UNIT
V
V
V
V
V
V
V
Supply voltage
CC
CCQ
SS
Supply voltage for output drivers
Supply voltage
3
3.6
V
V
Supply voltage for output drivers
High-level input voltage
Low-level input voltage
Ambient temperature
0
V
SSQ
IH
2
– 0.3
0
V
+ 0.3
V
CC
0.8
70
V
IL
T
A
°C
NOTES: 2. V MIN = – 1.5 V ac (pulse width
IL
5 ns)
3.
V
V
+ 0.3 V
CC
CCQ
maximum ac operating conditions (see Notes 4 and 5)
MIN
MAX
UNIT
V
V
V
High-level input voltage
Low-level input voltage
2
V
+ 2.0
CCQ
0.8
IH
V
– 2.0
V
IL
SSQ
NOTES: 4. The overshoot and undershoot voltage duration
3 ns with no input clamp diode.
5. The V
and V
are the operating parameters (not absolute maximum parameters).
CCQ
SSQ
15
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electrical characteristics over recommended ranges of supply voltage and ambient temperature (unless otherwise noted)
(see Note 6)
’626812B-8
’626812B-8A
’626812B-10
PARAMETER
TEST CONDITIONS
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
V
V
High-level output voltage
Low-level output voltage
Input current (leakage)
Output current (leakage)
I
I
= –4 mA
= 4 mA
2.4
2.4
2.4
V
V
OH
OH
0.4
±10
±10
0.4
±10
±10
0.4
±10
±10
OL
OL
I
I
0 V ≤ V ≤ V
+ 0.3 V,
All other pins = 0 V to V
Output disabled
MIN
RC
µA
µA
I
CC
CC
I
O
0 V ≤ V ≤ V
+ 0.3 V,
O
CC
Burst length = 1, t
t
CAS latency = 2
CAS latency = 3
95
95
85
90
mA
mA
RC
= 0 mA, 1 bank activated
I
Operating current
I
/I
CC1
OH OL
100
100
(see Notes 7, 8, and 9)
CKE MAX, t = 15 ns (see Note 10)
CKE and CLK
I
I
I
I
I
I
I
I
V
1
1
1
1
1
1
mA
mA
mA
mA
mA
mA
mA
mA
CC2P
Precharge standby current
in power-down mode
IL
CK
MAX, t
V
= ∞ (see Note 11)
CC2PS
CC2N
IL
CK
= 15 ns (see Note 10)
CKE
CKE
CKE
V
V
V
MIN, t
30
2
30
2
30
2
Precharge standby current
in non-power-down mode
IH
IH
IL
CK
MIN, CLK
MAX, t
V
MAX, t
= ∞ (see Note 11)
CK
CC2NS
CC3P
IL
= 15 ns (see Notes 7 and 10)
CK
3
3
3
Active standby current in
power-down mode
CKE and CLK
V
MAX, t
= ∞ (see Notes 7 and 11)
3
3
3
CC3PS
CC3N
IL
CK
= 15 ns (see Notes 7 and 10)
CKE
CKE
V
V
MIN, t
40
10
40
10
40
10
Active standby current in
non-power-down mode
IH
IH
CK
MIN, CLK
V
MAX, t
= ∞ (see Notes 7 and 11)
CK
CC3NS
IL
Page burst, I
All banks activated, n
CCD
(see Notes 12 and 13)
/I = 0 mA
CAS latency = 2
140
150
140
150
130
140
mA
mA
OH OL
I
Burst current
= 1 cycle
CC4
CAS latency = 3
CAS latency = 2
CAS latency = 3
90
95
90
95
80
85
mA
mA
mA
I
I
Auto-refresh current
Self-refresh current
t
t
MIN (see Note 11)
RC
CC5
RC
CKE
V
MAX
0.400
0.400
0.400
CC6
IL
NOTES: 6. All specifications apply to the device after power-up initialization. All control and address inputs must be stable and valid.
7. Only one bank is activated.
8.
t
= MIN
RC
9. Control, DQ, and address inputs change state only twice during t
.
RC
10. Control, DQ, and address inputs change state only once every 30 ns.
11. Control, DQ, and address inputs do not change (stable).
12. Control, DQ, and address inputs change state only once every cycle.
13. Continuous burst access, n
= 1 cycle.
CCD
TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
capacitance over recommended ranges of supply voltage and ambient temperature,
f = 1 MHz (see Note 14)
PARAMETER
MIN
2.5
MAX
4
UNIT
pF
C
C
C
C
Input capacitance, CLK
i(S)
i(AC)
i(E)
o
Input capacitance, A0–A11, CS, DQM, RAS, CAS, W
Input capacitance, CKE
2.5
5
pF
5
pF
Output capacitance
4
6.5
pF
NOTE 14: V
CC
= 3.3 ± 0.3 V and bias on pins under test is 0 V.
†‡
ac timing requirements
’626812B-8
’626812B-8A
’626812B-10
UNIT
MIN
10
8
MAX
MIN MAX
MIN
15
10
3
MAX
t
t
t
t
Cycle time, CLK, CAS latency = 2
Cycle time, CLK, CAS latency = 3
Pulse duration, CLK high
15
8
ns
ns
ns
ns
CK2
CK3
CH
3
3
Pulse duration, CLK low
3
3
3
CL
Access time, CLK high to data out, CAS latency = 2
(see Note 15)
t
6
6
7
7.5
7.5
ns
AC2
Access time, CLK high to data out, CAS latency = 3
(see Note 15)
t
t
t
6
ns
ns
ns
AC3
OH
LZ
Hold time, CLK high to data out (with 50-pF load)
3
1
3
1
3
2
Delay time, CLK high to DQ in low-impedance state
(see Note 16)
Delay time, CLK high to DQ in high-impedance state
(see Note 17)
t
8
8
8
ns
HZ
t
t
t
t
Setup time, address, control, and data input
Hold time, address, control, and data input
2
1
8
2
2
1
ns
ns
ns
ns
IS
1
IH
Power-down/self-refresh exit time (see Note 18)
Delay time, ACTV command to DEAC or DCAB command
8
10
CESP
RAS
48 100000
48 100000
50 100000
Delaytime, ACTV, REFR, orSLFRexittoACTV, MRS, REFR,
or SLFR command
t
68
68
80
ns
RC
Delay time, ACTV command to READ, READ-P, WRT, or
t
WRT-P command
(see Note 19)
20
20
30
ns
RCD
Delay time, DEAC or DCAB command to ACTV, MRS, REFR,
or SLFR command
t
t
20
16
20
16
30
20
ns
ns
RP
Delay time, ACTV command in one bank to ACTV command
in the other bank
RRD
†
‡
See Parameter Measurement Information for load circuits.
All references are made to the rising transition of CLK, unless otherwise noted.
NOTES: 15. t
is referenced from the rising transition of CLK that precedes the data-out cycle. For example, the first data-out t
is referenced
AC
AC
from the rising transition of CLK0 that is CAS latency minus one cycle after the READ command. Access time is measured at output
reference level 1.4 V.
16.
17.
t
is measured from the rising transition of CLK that is CAS latency minus one cycle after the READ command.
MAX defines the time at which the outputs are no longer driven and is not referenced to output voltage levels.
LZ
t
HZ
18. See Figure 18 and Figure 19.
19. For read or write operations with automatic deactivate, t
must be set to satisfy minimum t .
RAS
RCD
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SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
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†‡
ac timing requirements (continued)
’626812B-8
’626812B-8A
’626812B-10
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
Delay time, MRS command to ACTV, MRS, REFR, or SLFR
command
t
t
16
16
20
ns
ns
RSA
Final data out of READ-P operation to ACTV, MRS, SLFR, or
REFR command
t
– (CL –1) t
APR
RP
* CK
Final data in of WRT-P operation to ACTV, MRS, SLFR, or
REFR command
t
t
+ 1 t
CK
ns
APW
RP
t
t
Transition time (see Note 20)
Refresh interval
1
5
1
5
1
5
ns
T
64
64
64
ms
REF
Delay time, final data in of WRT operation to DEAC or DCAB
command
n
n
1
1
1
1
1
1
cycle
cycle
WR
Delay time, READ or WRT command to an interrupting
command
CCD
n
n
Delay time, CS low or high to input enabled or disabled
Delay time, CKE high or low to CLK enabled or disabled
0
1
0
1
0
1
0
1
0
1
0
1
cycle
cycle
CDD
CLE
Delay time, final data in of WRT operation to READ, READ-P,
WRT, WRT-P
n
n
n
n
1
0
2
1
0
2
1
0
2
cycle
cycle
cycle
cycle
CWL
Delay time, ENBL or MASK command to enabled or masked
data in
0
2
2
0
2
2
0
2
2
DID
Delay time, ENBL or MASK command to enabled or masked
data out
DOD
HZP2
Delay time, DEAC or DCAB command to DQ in
high-impedance state, CAS latency = 2
Delay time, DEAC or DCAB command to DQ in
high-impedance state, CAS latency = 3
n
n
3
0
3
0
3
0
cycle
cycle
HZP3
Delay time, WRT command to first data in
0
0
0
WCD
†
‡
See Parameter Measurement Information for load circuits.
All references are made to the rising transition of CLK, unless otherwise noted.
NOTE 20: Transition time, t , is measured between V and V
IH
.
IL
T
18
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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
PARAMETER MEASUREMENT INFORMATION
general information for ac timing measurements
The ac timing measurements are based on signal rise and fall times equal to 1 ns (t = 1 ns) and a midpoint
T
reference level of 1.5 V (INPUT = 2.8 V, 0 V) for LVTTL. For signal rise and fall times greater than 1 ns, the
reference level should be changed to V MIN and V MAX instead of the midpoint level. All specifications
IH
IL
referring to READ commands are valid for READ-P commands unless otherwise noted. All specifications
referring to WRT commands are also valid for WRT-P commands unless otherwise noted. All specifications
referring to consecutive commands are specified as consecutive commands for the same bank unless
otherwise noted.
Z = 50Ω
Output
Under
Test
C
= 50 pF
L
Circuit for ac Measurements
Figure 8. LVTTL-Load Circuits
t
CK
t
CH
CLK
t
T
t
CL
t
IS
t
T
t
IH
DQ, A0–A11, CS, RAS,
CAS, W, DQM, CKE
t
T
t
IH
t
, t
IS CESP
DQ, A0–A11, CS, RAS,
CAS, W, DQM, CKE
t
T
Figure 9. Input-Attribute Parameters
19
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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
PARAMETER MEASUREMENT INFORMATION
CAS Latency
CLK
t
ACTV
READ
AC
Command
Command
t
HZ
t
LZ
t
OH
DQ
Figure 10. Output Parameters
READ, WRT
DESL
READ, READ-P, WRT, WRT-P, DEAC, DCAB
Command Disable
n
CCD
n
t
CDD
ACTV
DEAC, DCAB
RAS
ACTV, REFR, SELF-REFRESH EXIT
ACTV, MRS, REFR, SLFR
READ, READ-P, WRT, WRT-P
ACTV, MRS, REFR, SLFR
ACTV (different bank)
t
RC
ACTV
DEAC, DCAB
ACTV
t
t
RCD
t
RP
RRD
MRS
ACTV, MRS, REFR, SLFR
t
RSA
Figure 11. Command-to-Command Parameters
20
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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
PARAMETER MEASUREMENT INFORMATION
n
HZP3
CLK
DQ
DEAC or
DCAB
Command
READ
Command
t
HZ
Q
Q
Q
NOTE A: For this example, assume CAS latency = 3 and burst length = 4.
Figure 12. Read Followed by Deactivate
t
APR
CLK
DQ
ACTV, MRS,
REFR, or SLFR
Command
READ-P
Command
Final Data Out
Q
NOTE A: For this example, assume CAS latency = 3 and burst length = 1.
Figure 13. Read With Auto-Deactivate
n
CWL
t
WR
CLK
DQ
DEAC or DCAB
Command
WRT
Command
WRT
Command
D
D
NOTE A: For this example, assume burst length = 1.
Figure 14. Write Followed By Deactivate
21
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TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
PARAMETER MEASUREMENT INFORMATION
n
CWL
t
APW
CLK
DQ
ACTV, MRS,
REFR, or SLFR
Command
WRT
Command
WRT-P
Command
t
RP
D
D
Figure 15. Write With Auto-Deactivate
n
DOD
t
WR
n
DOD
CLK
DQ
DEAC or
DCAB
Command
WRT
Command
READ
Command
Q
D
Ignored
MASK
Ignored
Ignored
ENBL
Command
MASK
Command
MASK
Command
MASK
Command
ENBL
Command
MASK
Command Command
DQM
NOTE A: For this example, assume CAS latency = 3 and burst length = 4.
Figure 16. DQ Masking
22
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PARAMETER MEASUREMENT INFORMATION
n
CLE
n
CLE
CLK
DQ
DQ
DQ
DQ
DQ
t
IS
t
IS
t
IH
t
IH
CKE
Figure 17. CLK-Suspend Operation
23
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SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
PARAMETER MEASUREMENT INFORMATION
CLK
Last Data-In
WRT
(WRT-P)
Operation
Exit
Power-Down
ModeIft
CESP
Is Satisfied
(New
CLK Is
Don’t Care,
Command)
Last
Data-Out
READ
(READ-P)
Operation
But Must Be
Stable
Before CKE
High
Enter
Power-Down
Mode
CKE
CLK
t
t
CESP
IH
t
IS
DESL or
NOOP
Last Data-In
WRT
Command
Only If t
Is Not
Satisfied
(WRT-P)
Operation
CESP
CLK Is
Don’t Care,
But Must Be
Stable
Before CKE
High
Last
Data-Out
READ
(READ-P)
Operation
Exit Power-Down
Mode (New
Enter
Power-Down
Mode
Command)
CKE
t
IH
t
CESP
t
IS
Figure 18. Power-Down Operation
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SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
PARAMETER MEASUREMENT INFORMATION
CLK
Exit SLFR
If t is
ACTV,
MRS, or
REFR
SLFR
Command
CESP
Satisfied
CLK Is
Don’t Care,
But Must
Be Stable
Before
DESL or
NOOP
Command
Command
Both Banks
Deactivated
Only Until t
Is Satisfied
RC
CKE High
CKE
t
RC
t
IH
t
IS
t
CESP
CLK
NOOP or
DESL if
Exit SLFR
ACTV, MRS, or
REFR Command
SLFR
Command
CLK Is
Don’t Care,
But Must
Be Stable
Before
t
Not
CESP
Yet
DESL or
NOOP
Command
Both Banks
Deactivated
Satisfied
Only Until t
RC
Is Satisfied
CKE High
CKE
t
RC
t
IH
t
IS
t
CESP
Figure 19. Self-Refresh Operation
25
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ACTV T
READ T
DEAC T
CLK
DQ
a
b
c
d
DQM
RAS
CAS
W
A10
R0
R0
A11
A0–A9
CS
C0
CKE
BURST
TYPE
†
BURST CYCLE
BANK
ROW
(D/Q)
(B/T)
ADDR
a
b
c
d
Q
T
R0
C0
C0 + 1
C0 + 2
C0 + 3
†
Column-address sequence depends on programmed burst type and starting column address C0 (see Table 5).
NOTE A: This example illustrates minimum t for the ’626812B-10 at 100 MHz.
RCD
Figure 20. Read Burst (CAS latency = 3, burst length = 4)
ACTV T
WRT T
DEAC T
CLK
DQ
a
b
c
d
e
f
g
h
DQM
RAS
CAS
W
R0
R0
A10
A11
C0
A0–A9
CS
CKE
BURST
TYPE
†
BURST CYCLE
BANK
ROW
(D/Q)
(B/T)
ADDR
a
b
c
d
e
f
g
h
D
T
R0
C0
C0 + 1
C0 + 2
C0 + 3
C0 + 4
C0 + 5
C0 + 6
C0 + 7
†
Column-address sequence depends on programmed burst type and starting column address C0 (see Table 6).
NOTE A: This example illustrates minimum t for the ’626812B-10 at 100 MHz.
RCD
Figure 21. Write Burst (burst length = 8)
ACTV B
WRT B
READ B
DEAC B
CLK
DQ
a
b
c
d
DQM
RAS
CAS
W
A10
R0
R0
A11
A0–A9
CS
C0
C1
CKE
BURST
TYPE
†
BANK
ROW
BURST CYCLE
(D/Q)
(B/T)
ADDR
a
b
c
d
D
Q
B
B
R0
R0
C0
C0 + 1
C1
C1 + 1
†
Column-address sequence depends on programmed burst type and starting column address C0 and C1 (see Table 4).
NOTE A: This example illustrates minimum t and n for the ’626812B-10 at 100 MHz.
RCD
CWL
Figure 22. Write-Read Burst (CAS latency = 3, burst length = 2)
ACTV T
READ T
WRT-P T
i
CLK
DQ
a
b
c
d
e
f
g
h
j
k
l
m
n
o
p
DQM
RAS
CAS
W
A10
R0
R0
A11
A0–A9
CS
C0
C1
CKE
BURST
TYPE
†
BURST CYCLE
BANK
(B/T)
ROW
(D/Q)
ADDR
a
b
c
d
e
f
g
h
i
j
k
l
m
n
o
p
Q
D
T
T
R0
R0
C0
C0+1 C0+2 C0+3 C0+4 C0+5 C0+6 C0+7
C1
C1+1 C1+2 C1+3 C1+4 C1+5 C1+6 C1+7
†
Column-address sequence depends on programmed burst type and starting column address C0 and C1 (see Table 6).
NOTE A: This example illustrates minimum t for the ’626812B-10 at 100 MHz.
RCD
Figure 23. Read-Write Burst With Automatic Deactivate (CAS latency = 3, burst length = 8)
ACTV T
READ-P T
ACTV T
ACTV B
READ-P B
ACTV B
k
READ-P B
CLK
DQ
a
b
c
d
e
f
g
h
i
j
l
m
n
o
p
q
r
s
DQM
RAS
CAS
W
R0
R0
R1
R1
R2
R2
R3
R3
A10
A11
C0
C1
C2
A0–A9
CS
CKE
BURST
TYPE
†
BURST CYCLE
BANK ROW
(B/T) ADDR
(D/Q)
a
b
c
d
e
f
g
h
i
j
k
l
m
n
o
p
q
r
s
.
.
Q
Q
Q
B
T
B
R0
R1
R2
C0 C0+1 C0+2 C0+3 C0+4 C0+5 C0+6 C0+7
C1 C1+1 C1+2 C1+3 C1+4 C1+5 C1+6 C1+7
C2 C2+1 C2+2
.
.
†
Column-address sequence depends on programmed burst type and starting column address C0, C1, and C2 (see Table 6).
NOTE A: This example illustrates minimum t for the ’626812B-10 at 100 MHz.
RCD
Figure 24. Two-Bank Row-Interleaving Read Bursts With Automatic Deactivate (CAS latency = 3, burst length = 8)
ACTV T
READ T
READ T
ACTV B
READ B
READ B
READ B
CLK
DQ
a
b
c
d
e
f
DQM
RAS
CAS
W
A10
R0
R0
R1
R1
A11
A0–A9
CS
C0
C1
C2
C3
C4
CKE
BURST
TYPE
†
BURST CYCLE
BANK
(B/T)
ROW
(D/Q)
ADDR
a
b
c
d
e
f
. . .
. . .
Q
Q
Q
.
B
T
B
R0
R1
R0
. . .
C0
C0 + 1
C1
C1 + 1
C2
C2 + 1
. . .
. . .
. . .
†
Column-address sequence depends on programmed burst type and starting column addresses C0, C1 and C2 (see Table 4).
Figure 25. Two-Bank Column-Interleaving Read Bursts (CAS latency = 3, burst length = 2)
ACTV T
WRT T
DEAC T
ACTV B
READ B
DEAC B
CLK
DQ
a
b
c
d
e
f
g
h
DQM
RAS
CAS
W
A10
A11
R0
R0
R1
R1
C0
C1
A0–A9
CS
CKE
BURST
TYPE
†
BANK
(B/T)
ROW
BURST CYCLE
(D/Q)
ADDR
a
b
c
d
e
f
g
h
C1+ 3
Q
D
B
T
R0
R1
C0
C0 +1
C0 + 2
C0 + 3
C1
C1 + 1
C1 +2
†
Column-address sequence depends on programmed burst type and starting column addresses C0 and C1 (see Table 5).
NOTE A: This example illustrates a minimum t for the ’626812B-10 at 100 MHz.
RCD
Figure 26. Read-Burst Bank B, Write-Burst Bank T (CAS latency = 3, burst length = 4)
ACTV T
WRT-P T
ACTV B
READ-P B
CLK
DQ
a
b
c
d
e
f
g
DQM
RAS
CAS
W
R0
R0
R1
R1
A10
A11
A0–A9
CS
C0
C1
CKE
BURST
TYPE
†
BANK
(B/T)
ROW
BURST CYCLE
(D/Q)
ADDR
a
C0
b
c
d
e
f
g
h
D
Q
T
B
R0
R1
C0 +1
C0 + 2
C0 + 3
C1
C1 + 1
C1 + 2
C1 + 3
†
Column-address sequence depends on programmed burst type and starting column address C0 and C1 (see Table 5).
NOTE A: This example illustrates minimum n for the ’626812B-10 at 100 MHz.
CWL
Figure 27. Write-Burst Bank T, Read-Burst Bank B With Automatic Deactivate (CAS latency = 3, burst length = 4)
ACTV T
READ T
WRT T
e
DCAB
CLK
DQ
g
a
b
c
d
f
h
DQM
RAS
CAS
W
R0
R0
A10
A11
C0
C1
A0–A9
CS
CKE
BURST
TYPE
†
BURST CYCLE
BANK
(B/T)
ROW
(D/Q)
ADDR
a
C0
b
c
d
e
f
g
h
C1+3
Q
D
T
T
R0
R1
C0+1
C0+2
C0+3
C1
C1+1
C1+2
†
Column-address sequence depends on programmed burst type and starting column address C0 and C1 (see Table 5).
NOTE A: This example illustrates minimum t for the ’626812B-10 at 100 MHz.
RCD
Figure 28. Data Mask (CAS latency = 3, burst length = 4)
REFR
ACTV T
READ T
DEAC T
b
REFR
CLK
DQ
a
c
d
DQM
RAS
CAS
W
R0
R0
A10
A11
C0
A0–A9
CS
CKE
BURST
TYPE
†
BURST CYCLE
BANK
ROW
(D/Q)
(B/T)
ADDR
a
b
c
d
Q
T
R0
C0
C0+1
C0+2
C0+3
†
Column-address sequence depends on programmed burst type and starting column address C0 (see Table 5).
NOTE A: This example illustrates minimuim t and t for the ’626812B-10 at 100 MHz.
RC
RCD
Figure 29. Refresh Cycles (CAS latency = 3, burst length = 4)
DCAB
MRS
ACTV B
WRT-P B
CLK
DQ
a
b
c
d
DQM
RAS
CAS
W
R0
R0
A10
See Note B
See Note B
See Note B
A11
A0–A9
C0
CS
CKE
BURST
TYPE
†
BANK
ROW
BURST CYCLE
(D/Q)
(B/T)
ADDR
a
b
c
d
D
B
R0
C0
C0+1
C0+2
C0+3
†
Column-address sequence depends on programmed burst type and starting column address C0 (see Table 5).
NOTES: A. This example illustrates minimum t , t , and t for the ’626812B-10 at 100 MHz.
RP RSA
RCD
B. See Figure 1
Figure 30. Set Mode Register (deactivate all, set mode register, write burst with automatic deactivate)
(burst length = 4)
ACTV T
READ T
WRT-P T
HOLD
PDE
HOLD
b
CLK
DQ0
a
d
e
f
g
h
c
DQM
RAS
CAS
W
R0
R0
A10
A11
C1
C0
A0–A9
CS
CKE
BURST-
TYPE
†
BURST CYCLE
BANK
(B/T)
ROW
(D/Q)
ADDR
a
b
c
d
e
f
g
h
Q
D
T
T
R0
R1
C0
C0+1
C0+2
C0+3
C1
C1+1
C1+2
C1+3
†
Column-address sequence depends on programmed burst type and starting column address C0 and C1 (see Table 5).
Figure 31. CLK Suspend (HOLD) During Read Burst and Write Burst (CAS latency = 3, burst length = 4)
TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
device symbolization
TI
-SS
Speed Code (-8, -8A, -10)
Package Code
TMS626812B DGE
W
B
Y
M
LLLL P
Assembly Site Code
Lot Traceability Code
Month Code
Year Code
Die Revision Code
Wafer Fab Code
38
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TMS626812B
1 048 576 BY 8-BIT BY 2-BANK
SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES
SMOS693A – OCTOBER 1997 – REVISED APRIL 1998
MECHANICAL DATA
DGE (R-PDSO-G44)
PLASTIC SMALL-OUTLINE PACKAGE
0.018 (0,45)
0.006 (0,16)
M
0.031 (0,80)
44
0.012 (0,30)
23
0.471 (11,96)
0.455 (11,56)
0.404 (10,26)
0.396 (10,06)
0.006 (0,15) NOM
Gage Plane
0.010 (0,25)
1
22
0°–5°
0.729 (18,51)
0.721 (18,31)
0.024 (0,60)
0.016 (0,40)
Seating Plane
0.004 (0,10)
0.047 (1,20) MAX
0.002 (0,05) MIN
4040070-3/C 4/95
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion.
39
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IMPORTANT NOTICE
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Copyright 1998, Texas Instruments Incorporated
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