TPA0213_07 [TI]

2-W MONO AUDIO POWER AMPLIFIER WITH HEADPHONE DRIVE; 耳机驱动器2 -W单声道音频功率放大器
TPA0213_07
型号: TPA0213_07
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

2-W MONO AUDIO POWER AMPLIFIER WITH HEADPHONE DRIVE
耳机驱动器2 -W单声道音频功率放大器

驱动器 放大器 功率放大器
文件: 总24页 (文件大小:703K)
中文:  中文翻译
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TPA0213  
2-W MONO AUDIO POWER AMPLIFIER  
WITH HEADPHONE DRIVE  
SLOS276D – JANUARY 2000 – REVISED NOVEMBER 2002  
DGQ PACKAGE  
(TOP VIEW)  
D
Ideal for Notebook Computers, PDAs, and  
Other Small Portable Audio Devices  
D
D
D
D
2 W Into 4 From 5-V Supply  
0.6 W Into 4 From 3-V Supply  
Stereo Headphone Drive  
1
2
3
4
5
MONO–IN  
SHUTDOWN  
LO/MO–  
LIN  
GND  
ST/MN  
RO/MO+  
10  
9
V
8
DD  
BYPASS  
7
Separate Inputs for the Mono (BTL) Signal,  
and Stereo (SE) Left/Right Signals  
RIN  
6
D
D
Wide Power Supply Compatibility 2.5 V to  
5.5 V  
Low Supply Current  
– 4.2 mA Typical at 5 V  
– 3.6 mA Typical at 3 V  
D
D
D
Shutdown Control . . . 1 µA Typical  
Shutdown Pin Is TTL Compatible  
–40°C to 85°C Operating Temperature  
Range  
D
Space-Saving, Thermally-Enhanced MSOP  
Packaging  
description  
The TPA0213 is a 2-W mono bridge-tied-load (BTL) amplifier designed to drive speakers with as low as 4-Ω  
impedance. The amplifier can be reconfigured on the fly to drive two stereo single-ended (SE) signals into  
headphones. This makes the device ideal for use in small notebook computers, PDAs, personal digital audio  
players, anywhere a mono speaker and stereo headphones are required. From a 5-V supply, the TPA0213 can  
deliver 2 W of power into a 4-speaker.  
The gain of the input stage is set by the user-selected input resistor and a 50-kinternal feedback resistor  
(A = – R /R ). The power stage is internally configured with a gain of –1.25 V/V in SE mode, and –2.5 V/V in  
V
F
I
BTL mode. Thus, the overall gain of the amplifier is –62.5 k/R in SE mode and –125 k/R in BTL mode.  
I
I
The TPA0213 is available in the 10-pin thermally-enhanced MSOP package (DGQ) and operates over an  
ambient temperature range of –40°C to 85°C.  
AVAILABLE OPTIONS  
PACKAGED DEVICES  
MSOP  
T
A
MSOP  
SYMBOLIZATION  
(DGQ)  
40°C to 85°C  
TPA0213DGQ  
AEH  
The DGQ package are available taped and reeled. To order a taped and reeled part, add the  
suffix R to the part number (e.g., TPA0213DGQR).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 2002, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPA0213  
2-W MONO AUDIO POWER AMPLIFIER  
WITH HEADPHONE DRIVE  
SLOS276D JANUARY 2000 REVISED NOVEMBER 2002  
functional block diagram  
C
B
4
BYPASS  
V
DD  
V
DD  
3
1 kΩ  
GND  
8
V
DD  
BYPASS  
50 kΩ  
Mono  
Audio  
Input  
50 kΩ  
C
C
i
i
R
R
1.25*R  
I
I
100 kΩ  
1
5
R
M
U
X
C
C
MONO-IN  
RIN  
Right  
Audio  
Input  
RO/MO+  
6
+
+
BYPASS  
BYPASS  
100 kΩ  
50 kΩ  
50 kΩ  
ST/MN  
7
Stereo/Mono  
Control  
50 kΩ  
1.25*R  
Left  
Audio  
Input  
R
M
U
X
C
C
C
i
R
I
9
2
LIN  
LO/MO10  
+
+
1 kΩ  
BYPASS  
BYPASS  
From  
System Control  
Shutdown  
and Depop  
Circuitry  
SHUTDOWN  
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPA0213  
2-W MONO AUDIO POWER AMPLIFIER  
WITH HEADPHONE DRIVE  
SLOS276D JANUARY 2000 REVISED NOVEMBER 2002  
Terminal Functions  
TERMINAL  
NAME  
BYPASS  
I/O  
DESCRIPTION  
NO.  
4
I
BYPASS is the tap to the voltage divider for internal mid-supply bias. This terminal should be connected to a  
0.1-µF to 1-µF capacitor.  
GND  
8
9
Ground terminal  
LIN  
I
O
I
Left-channel input terminal  
LO/MO–  
MONO-IN  
RIN  
10  
1
Left-output in SE mode and mono negative output in BTL mode.  
Mono input terminal  
5
I
Right-channel input terminal  
RO/MO+  
SHUTDOWN  
ST/MN  
6
O
I
Right-output in SE mode and mono positive output in BTL mode  
SHUTDOWN places the entire device in shutdown mode when held low. TTL compatible input.  
2
7
I
Selects between stereo and mono mode. When held high, the amplifier is in SE stereo mode, while held low,  
the amplifier is in BTL mono mode.  
V
DD  
3
I
V
DD  
is the supply voltage terminal.  
§
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)  
Supply voltage, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V  
DD  
Input voltage range, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to V +0.3 V  
I
DD  
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . internally limited (see Dissipation Rating Table)  
Operating free-air temperature range, T (see Table 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to 85°C  
A
Operating junction temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to 150°C  
J
Storage temperature range, T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C  
stg  
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C  
§
Stresses beyond those listed under absolute maximum ratingsmay cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditionsis not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
DISSIPATION RATING TABLE  
PACKAGE  
T
A
25°C  
DERATING FACTOR  
T
A
= 70°C  
T = 85°C  
A
DGQ  
2.14 W  
17.1 mW/°C  
1.37 W  
1.11 W  
Please see the Texas Instruments document, PowerPAD Thermally Enhanced Package Application Report  
(SLMA002), for more information on the PowerPAD package. The thermal data was measured on a PCB  
layoutbased on theinformation inthe section entitledTexasInstrumentsRecommendedBoardforPowerPAD  
on page 33 of that document.  
PowerPAD is a trademark of Texas Instruments  
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPA0213  
2-W MONO AUDIO POWER AMPLIFIER  
WITH HEADPHONE DRIVE  
SLOS276D JANUARY 2000 REVISED NOVEMBER 2002  
recommended operating conditions  
MIN  
2.5  
2.7  
4.5  
2
MAX  
UNIT  
Supply voltage, V  
DD  
5.5  
V
V
V
= 3 V  
= 5 V  
DD  
ST/MN  
High-level input voltage, V  
V
DD  
IH  
SHUTDOWN  
V
V
= 3 V  
= 5 V  
1.65  
2.75  
0.8  
DD  
ST/MN  
Low-level input voltage, V  
V
DD  
IL  
SHUTDOWN  
Operating free-air temperature, T  
40  
85  
°C  
A
electrical characteristics at specified free-air temperature, V  
noted)  
= 3 V, T = 25°C (unless otherwise  
A
DD  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
mV  
|V  
|
Output offset voltage (measured differentially)  
Power supply rejection ratio  
R
= 4 , ST/MN = 0 V, SHUTDOWN = 2 V  
30  
OO  
PSRR  
L
V
DD  
= 2.9 V to 3.1 V,  
BTL mode  
65  
dB  
SHUTDOWN, V  
= 3.3 V,  
V = V  
1
1
1
1
DD  
= 3.3 V,  
I
DD  
DD  
|I  
|
High-level input current  
Low-level input current  
µA  
µA  
IH  
ST/MN, V  
V = V  
I
DD  
SHUTDOWN, V  
= 3.3 V,  
V = 0 V  
I
DD  
= 3.3 V,  
|I  
|
IL  
ST/MN, V  
V = 0 V  
I
DD  
z
Input impedance  
50  
3.6  
1
kΩ  
mA  
µA  
i
I
Supply current  
V
= 2.5 V, SHUTDOWN = 2 V  
5.5  
10  
DD  
DD  
SHUTDOWN = 0 V  
= 2.5 V, R = 4 , ST/MN = 1.375 V,  
I
Supply current, shutdown mode  
DD(SD)  
V
DD  
L
R
Feedback resistor  
46  
50  
57  
kΩ  
F
SHUTDOWN = 2 V  
operating characteristics, V  
= 3 V, T = 25°C, R = 4 , f = 1 kHz (unless otherwise noted)  
DD  
A
L
PARAMETER  
TEST CONDITIONS  
BTL mode  
MIN  
TYP MAX  
UNIT  
THD = 1%,  
660  
33  
P
O
Output power, see Note 1  
mW  
THD = 0.1%,  
SE mode,  
R = 32 Ω  
L
THD + N Total harmonic distortion plus noise  
P
= 500 mW, f = 20 Hz to 20 kHz  
0.2%  
20  
O
B
OM  
Maximum output power bandwidth  
Supply ripple rejection ratio  
Gain = 8 dB,  
THD = 2%  
kHz  
dB  
BTL mode  
SE mode  
BTL mode  
SE mode  
52  
f = 1 kHz,  
CB = 0.47 µF  
62  
42  
V
n
Noise output voltage  
CB = 0.47 µF,  
f = 20 Hz to 20 kHz  
µV  
RMS  
21  
NOTE 1: Output power is measured at the output terminals of the device at f = 1 kHz.  
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPA0213  
2-W MONO AUDIO POWER AMPLIFIER  
WITH HEADPHONE DRIVE  
SLOS276D JANUARY 2000 REVISED NOVEMBER 2002  
electrical characteristics at specified free-air temperature, V  
noted)  
= 5 V, T = 25°C (unless otherwise  
A
DD  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
mV  
|V  
|
Output offset voltage (measured differentially)  
Power supply rejection ratio  
R
= 4 , ST/MN = 0 V, SHUTDOWN = 2 V  
30  
OO  
PSRR  
L
V
DD  
= 4.9 V to 5.1 V,  
BTL mode  
62  
dB  
SHUTDOWN, V  
= 5.5 V,  
V = V  
1
1
1
1
DD  
= 5.5 V,  
I
DD  
DD  
|I  
|
High-level input current  
Low-level input current  
µA  
µA  
IH  
ST/MN, V  
V = V  
I
DD  
SHUTDOWN, V  
= 5.5 V,  
V = 0 V  
I
DD  
= 5.5 V,  
|I  
|
IL  
ST/MN, V  
V = 0 V  
I
DD  
z
Input impedance  
50  
4.2  
1
kΩ  
mA  
µA  
i
I
I
Supply current  
SHUTDOWN = 2 V  
SHUTDOWN = 0 V  
6.3  
10  
DD  
Supply current, shutdown mode  
DD(SD)  
operating characteristics, V  
= 5 V, T = 25°C, R = 4 Ω  
DD  
A
L
PARAMETER  
TEST CONDITIONS  
BTL mode  
MIN  
TYP  
2
MAX  
UNIT  
W
THD = 0.3%,  
THD = 0.1%,  
P
O
Output power, see Note 1  
SE mode,  
R
= 32 Ω  
90  
mW  
L
Total harmonic distortion plus  
noise  
THD + N  
P
= 1.5 W,  
f = 20 Hz to 20 kHz  
THD = 2%  
0.2%  
O
B
OM  
Maximum output power bandwidth Gain = 6 dB,  
20  
52  
62  
42  
21  
kHz  
dB  
BTL mode  
SE mode  
BTL mode  
SE mode  
Supply ripple rejection ratio  
Noise output voltage  
f = 1 kHz,  
CB = 0.47 µF  
V
n
CB = 0.47 µF,  
f = 20 Hz to 20 kHz  
µV  
RMS  
NOTE 1: Output power is measured at the output terminals of the device at f = 1 kHz.  
TYPICAL CHARACTERISTICS  
Table of Graphs  
FIGURE  
vs Output power  
vs Frequency  
vs Frequency  
vs Frequency  
1, 3, 5, 6, 8, 10  
2, 4, 7, 9  
11  
THD+N  
Total harmonic distortion plus noise  
V
n
Output noise voltage  
Power supply rejection ratio  
12, 13  
5
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPA0213  
2-W MONO AUDIO POWER AMPLIFIER  
WITH HEADPHONE DRIVE  
SLOS276D JANUARY 2000 REVISED NOVEMBER 2002  
TYPICAL CHARACTERISTICS  
TOTAL HARMONIC DISTORTION + NOISE  
TOTAL HARMONIC DISTORTION + NOISE  
vs  
vs  
OUTPUT POWER  
FREQUENCY  
10  
1
V
= 3 V  
DD  
Mono/BTL  
V
=3 V  
DD  
Mono/BTL  
f = 1 kHz  
Gain = 8 dB  
R
= 8 Ω  
= 250 mW  
L
P
O
1
0.1  
Gain = 20 dB  
R
= 4 Ω  
L
Gain = 8 dB  
R
= 8 Ω  
.10  
.01  
L
0.01  
0.001  
0.001  
0.01  
0.1  
1
10  
10  
100  
1k  
10k 20k  
P
O
Output Power W  
f Frequency Hz  
Figure 1  
Figure 2  
TOTAL HARMONIC DISTORTION + NOISE  
TOTAL HARMONIC DISTORTION + NOISE  
vs  
vs  
OUTPUT POWER  
FREQUENCY  
10  
1
V
= 3 V  
DD  
Mono/BTL  
= 8 Ω  
V
= 3 V  
DD  
Stereo/SE  
R
L
Gain = 1.9 dB  
Gain = 8 dB  
1
0.1  
R
= 32 Ω  
= 25 mW  
f = 20 kHz  
L
P
O
0.1  
0.01  
0.01  
0.001  
f = 1 kHz  
R
= 10 kΩ  
L
f = 20 Hz  
V
O
= 1 V  
RMS  
0.001  
0.01  
0.1  
1
2
10  
100  
1k  
10k 20k  
P
O
Output Power W  
f Frequency Hz  
Figure 3  
Figure 4  
6
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPA0213  
2-W MONO AUDIO POWER AMPLIFIER  
WITH HEADPHONE DRIVE  
SLOS276D JANUARY 2000 REVISED NOVEMBER 2002  
TYPICAL CHARACTERISTICS  
TOTAL HARMONIC DISTORTION + NOISE  
TOTAL HARMONIC DISTORTION + NOISE  
vs  
vs  
OUTPUT POWER  
OUTPUT POWER  
10  
10  
V
= 3 V  
DD  
Stereo/SE  
= 32 Ω  
V
DD  
= 5 V  
Mono/BTL  
f = 1 kHz  
R
L
Gain = 1.9 dB  
Gain = 8 dB  
1
1
R
= 4 Ω  
L
f = 20 kHz  
0.1  
0.01  
0.1  
0.01  
R
= 8 Ω  
L
f = 1 kHz  
f = 20 Hz  
0.01  
0.1  
0.001  
0.01  
P
0.1  
Output Power W  
1
10  
P
O
Output Power W  
O
Figure 5  
Figure 6  
TOTAL HARMONIC DISTORTION + NOISE  
TOTAL HARMONIC DISTORTION + NOISE  
vs  
vs  
FREQUENCY  
OUTPUT POWER  
1
10  
V
= 5 V  
DD  
Mono/BTL  
V
= 5 V  
DD  
Mono/BTL  
R = 8 Ω  
L
R
= 8 Ω  
= 1 W  
L
P
O
Gain = 8 dB  
0.1  
f = 20 kHz  
1
Gain = 20 dB  
Gain = 8 dB  
f = 1 kHz  
0.01  
0.001  
0.1  
0.01  
f = 20 Hz  
10  
100  
1k  
10k 20k  
0.001  
0.01  
P
0.1  
1
2
f Frequency Hz  
Output Power W  
O
Figure 7  
Figure 8  
7
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPA0213  
2-W MONO AUDIO POWER AMPLIFIER  
WITH HEADPHONE DRIVE  
SLOS276D JANUARY 2000 REVISED NOVEMBER 2002  
TYPICAL CHARACTERISTICS  
TOTAL HARMONIC DISTORTION + NOISE  
TOTAL HARMONIC DISTORTION + NOISE  
vs  
vs  
FREQUENCY  
OUTPUT POWER  
1
10  
V
= 5 V  
DD  
V
= 5 V  
DD  
Stereo/SE  
= 32 Ω  
Stereo/SE  
Gain = 1.9 dB  
R
L
Gain = 1.9 dB  
0.1  
1
R
= 32 Ω  
= 75 mW  
L
P
O
f = 20 kHz  
f = 1 kHz  
0.01  
0.001  
0.1  
0.01  
R
= 10 kΩ  
L
V
O
= 1 V  
RMS  
f = 20 Hz  
0.1  
10  
100  
1k  
10k 20k  
0.01  
1
f Frequency Hz  
P
O
Output Power W  
Figure 9  
Figure 10  
OUTPUT NOISE VOLTAGE  
POWER SUPPLY REJECTION RATIO  
vs  
vs  
FREQUENCY  
FREQUENCY  
100  
0
20  
V
= 5 V  
DD  
Mono/BTL  
C
= 0.47 µF  
B
Mono/BTL  
= 8 Ω  
Gain = 8 dB  
Gain = 8 dB  
Mono/BTL  
= 8 Ω  
Gain = 20 dB  
R
R
L
L
C
= 1 µF  
B
40  
C
= 10 µF  
B
Stereo/SE  
Stereo/SE  
R = 32 Ω  
L
Gain = 1.9 dB  
60  
R
= 32 Ω  
L
Gain = 14 dB  
80  
Bypass = 2.5 V  
100  
10  
10  
120  
100  
1k  
10k 20k  
20  
100  
1k  
10k 20k  
f Frequency Hz  
f Frequency Hz  
Figure 11  
Figure 12  
8
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPA0213  
2-W MONO AUDIO POWER AMPLIFIER  
WITH HEADPHONE DRIVE  
SLOS276D JANUARY 2000 REVISED NOVEMBER 2002  
TYPICAL CHARACTERISTICS  
POWER SUPPLY REJECTION RATIO  
vs  
FREQUENCY  
0
20  
V
= 5 V  
DD  
Stereo/SE  
Gain = 1.9 dB  
C
= 0.47 µF  
B
40  
C
= 1 µF  
B
60  
80  
Bypass = 2.5 V  
100  
120  
20  
100  
1k  
10k 20k  
f Frequency Hz  
Figure 13  
APPLICATION INFORMATION  
gain setting via input resistance  
The gain of the input stage is set by the user-selected input resistor and a 50-kinternal feedback resistor.  
However, the power stage is internally configured with a gain of 1.25 V/V in SE mode, and 2.5 V/V in BTL  
mode. Thus, the feedback resistor (R ) is effectively 62.5 kin SE mode and 125 kin BTL mode. Therefore,  
F
the overall gain can be calculated using equations (1) and (2).  
125 kW  
A
A
+
+
(BTL)  
(SE)  
V
V
R
(1)  
(2)  
I
62.5 kW  
R
I
The 3 dB frequency can be calculated using equation 3:  
1
(3)  
ƒ
+
3 dB  
2p R C  
I i  
If the filter must be more accurate, the value of the capacitor should be increased while the value of the resistor  
to ground should be decreased. In addition, the order of the filter could be increased.  
9
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPA0213  
2-W MONO AUDIO POWER AMPLIFIER  
WITH HEADPHONE DRIVE  
SLOS276D JANUARY 2000 REVISED NOVEMBER 2002  
APPLICATION INFORMATION  
input capacitor, C  
i
In the typical application an input capacitor, C , is required to allow the amplifier to bias the input signal to the  
i
proper dc level for optimum operation. In this case, C and the input resistance of the amplifier, R , form a  
i
I
high-pass filter with the corner frequency determined in equation 4.  
3 dB  
(4)  
1
f
+
c(highpass)  
2pR C  
i
I
f
c
The value of C is important to consider as it directly affects the bass (low frequency) performance of the circuit.  
i
Consider the example where R is 710 kand the specification calls for a flat bass response down to 40 Hz.  
I
Equation 2 is reconfigured as equation 5.  
1
C +  
i
2pR f  
(5)  
c
I
In this example, C is 5.6 nF so one would likely choose a value in the range of 5.6 nF to 1 µF. A further  
I
consideration for this capacitor is the leakage path from the input source through the input network (C ) and the  
i
feedback network to the load. This leakage current creates a dc offset voltage at the input to the amplifier that  
reduces useful headroom, especially in high gain applications. For this reason a low-leakage tantalum or  
ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor  
should face the amplifier input in most applications as the dc level there is held at V /2, which is likely higher  
DD  
than the source dc level. Note that it is important to confirm the capacitor polarity in the application.  
power supply decoupling, C  
(S)  
The TPA0213 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling  
to ensure the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also  
prevents oscillations for long lead lengths between the amplifier and the speaker. The optimum decoupling is  
achieved by using two capacitors of different types that target different types of noise on the power supply leads.  
For higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance  
(ESR) ceramic capacitor, typically 0.1 µF placed as close as possible to the device V  
filtering lower-frequency noise signals, a larger aluminum electrolytic capacitor of 10 µF or greater placed near  
lead, works best. For  
DD  
the audio power amplifier is recommended.  
midrail bypass capacitor, C  
(BYP)  
The midrail bypass capacitor, C  
During start-up or recovery from shutdown mode, C  
, is the most critical capacitor and serves several important functions.  
(BYP)  
determines the rate at which the amplifier starts up.  
(BYP)  
The second function is to reduce noise produced by the power supply caused by coupling into the output drive  
signal. This noise is from the midrail generation circuit internal to the amplifier, which appears as degraded  
PSRR and THD+N.  
Bypass capacitor, C  
for the best THD and noise performance.  
, values of 0.47 µF to 1 µF ceramic or tantalum low-ESR capacitors are recommended  
(BYP)  
10  
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APPLICATION INFORMATION  
output coupling capacitor, C  
(C)  
In the typical single-supply SE configuration, an output coupling capacitor (C ) is required to block the dc bias  
(C)  
at the output of the amplifier, thus preventing dc currents in the load. As with the input coupling capacitor, the  
output coupling capacitor and impedance of the load form a high-pass filter governed by equation 6.  
3 dB  
1
f
+
(6)  
c(high)  
2pR C  
L
(C)  
f
c
The main disadvantage, from a performance standpoint, is that the load impedances are typically small, which  
drives the low-frequency corner higher, degrading the bass response. Large values of C are required to pass  
(C)  
low frequencies into the load. Consider the example where a C  
of 330 µF is chosen and loads vary from  
(C)  
3 , 4 , 8 , 32 , 10 k, to 47 k. Table 1 summarizes the frequency response characteristics of each  
configuration.  
Table 1. Common Load Impedances vs Low Frequency Output Characteristics in SE Mode  
R
C
Lowest Frequency  
161 Hz  
L
(C)  
3 Ω  
330 µF  
330 µF  
330 µF  
330 µF  
330 µF  
330 µF  
4 Ω  
8 Ω  
120 Hz  
60 Hz  
32 Ω  
10,000 Ω  
47,000 Ω  
Ą15 Hz  
0.05 Hz  
0.01 Hz  
As Table 1 indicates, most of the bass response is attenuated into a 4-load, an 8-load is adequate,  
headphone response is good, and drive into line level inputs (a home stereo for example) is exceptional.  
Furthermore, the total amount of ripple current that must flow through the capacitor must be considered when  
choosing the component. As shown in the application circuit, one coupling capacitor must be in series with the  
mono loudspeaker for proper operation of the stereo-mono switching circuit. For a 4-load, this capacitor must  
be able to handle about 700 mA of ripple current for a continuous output power of 2 W.  
using low-ESR capacitors  
Low-ESR capacitors are recommended throughout this applications section. A real (as opposed to ideal)  
capacitor can be modeled simply as a resistor in series with an ideal capacitor. The voltage drop across this  
resistor minimizes the beneficial effects of the capacitor in the circuit. The lower the equivalent value of this  
resistance the more the real capacitor behaves like an ideal capacitor.  
11  
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APPLICATION INFORMATION  
bridged-tied load versus single-ended mode  
Figure 14 shows a Class-AB audio power amplifier (APA) in a BTL configuration. The TPA0213 BTL amplifier  
consists of two Class-AB amplifiers driving both ends of the load. There are several potential benefits to this  
differential drive configuration, but initially consider power to the load. The differential drive to the speaker  
means that as one side is slewing up, the other side is slewing down, and vice versa. This, in effect, doubles  
the voltage swing on the load as compared to a ground referenced load. Plugging 2 × V  
equation, where voltage is squared, yields 4× the output power from the same supply rail and load impedance.  
into the power  
O(PP)  
See equation 7.  
V
O(PP)  
(7)  
V
+
(RMS)  
Ǹ
2 2  
2
V
(RMS)  
Power +  
R
L
V
DD  
V
O(PP)  
2x V  
R
O(PP)  
L
V
DD  
V  
O(PP)  
Figure 14. Bridge-Tied Load Configuration  
In a typical computer sound channel operating at 5 V, bridging raises the power into an 8-speaker from a  
singled-ended (SE, ground reference) limit of 250 mW to 1 W. In sound power, that is a 6-dB improvement—  
which is loudness that can be heard. In addition to increased power, there are frequency response concerns.  
Consider the single-supply SE configuration shown in Figure 15. A coupling capacitor is required to block the  
dc offset voltage from reaching the load. These capacitors can be quite large (approximately 33 µF to 1000 µF)  
so they tend to be expensive and heavy. Also, they occupy valuable PCB area, and they limit low-frequency  
performance of the system. This frequency limiting effect is due to the high pass filter network created with the  
speaker impedance and the coupling capacitance and is calculated with equation 8.  
1
(8)  
f
+
c
2pR C  
L (C)  
12  
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APPLICATION INFORMATION  
bridged-tied load versus single-ended mode (continued)  
For example, a 68-µF capacitor with an 8-speaker would attenuate low frequencies below 293 Hz. The BTL  
configuration cancels the dc offsets, which eliminates the need for the blocking capacitors. Low-frequency  
performance is then limited only by the input network and speaker response. Cost and PCB space are also  
minimized by eliminating the bulky coupling capacitor.  
V
DD  
3 dB  
V
O(PP)  
C
(C)  
V
O(PP)  
R
L
f
c
Figure 15. Single-Ended Configuration and Frequency Response  
Increasing power to the load does carry a penalty of increased internal power dissipation. The increased  
dissipation is understandable considering that the BTL configuration produces 4× the output power of the SE  
configuration. Internal dissipation versus output power is discussed further in the crest factor and thermal  
considerations section.  
single-ended operation  
In SE mode (see Figure 14 and Figure 15), the load is driven from the primary amplifier output for each channel  
(LO and RO, terminals 6 and 10)  
The amplifier switches to single-ended operation when the ST/MN terminal is held high.  
input MUX operation  
The input MUX allows two separate inputs to be applied to the amplifier. When the ST/MN terminal is held high,  
the headphone inputs (LIN and RIN) are active. When the ST/MN terminal is held low, the line BTL input  
(MONO-IN) is active.  
BTL amplifier efficiency  
Class-AB amplifiers are inefficient. The primary cause of inefficiencies is the voltage drop across the output  
stage transistors. There are two components of the internal voltage drop. One is the headroom or dc voltage  
drop that varies inversely to output power. The second component is due to the sinewave nature of the output.  
The total voltage drop can be calculated by subtracting the RMS value of the output voltage from V . The  
DD  
internal voltage drop multiplied by the RMS value of the supply current, I rms, determines the internal power  
DD  
dissipation of the amplifier.  
An easy-to-use equation to calculate efficiency starts out as being equal to the ratio of power from the power  
supply to the power delivered to the load. To accurately calculate the RMS and average values of power in the  
load and in the amplifier, the current and voltage waveform shapes must first be understood. See Figure 16.  
13  
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BTL amplifier efficiency (continued)  
I
V
O
DD  
I
DD(avg)  
V
(LRMS)  
Figure 16. Voltage and Current Waveforms for BTL Amplifiers  
Although the voltages and currents for SE and BTL are sinusoidal in the load, currents from the supply are very  
different between SE and BTL configurations. In an SE application the current waveform is a half-wave rectified  
shape, whereas in BTL it is a full-wave rectified waveform. This means RMS conversion factors are different.  
Keep in mind that for most of the waveform both the push and pull transistors are not on at the same time, which  
supports the fact that each amplifier in the BTL device only draws current from the supply for half the waveform.  
The following equations are the basis for calculating amplifier efficiency.  
P
L
Efficiency of a BTL amplifier +  
(9)  
P
SUP  
where  
2
2
L
V
V
V
P
2R  
LRMS  
P
P
+
, andV  
+
, therefore, P  
1
+
L
LRMS  
L
Ǹ
R
2
L
p
+
 
[cos(t)] p  
0
2V  
V
V
P
1
P
P
+
ŕ
P
+ V  
I
avg  
I
avg +  
sin(t) dt  
and  
and  
p
p
SUP  
DD DD  
DD  
p R  
L
R
R
L
L
0
therefore,  
P
2 V  
V
DD  
p R  
P
+
SUP  
L
substituting P and P  
into equation 9,  
L
SUP  
2
V
P
2 R  
p V  
L
P
Efficiency of a BTL amplifier +  
+
4 V  
2 V  
V
P
DD  
DD  
p R  
L
where  
Ǹ2 P R  
V
+
P
L
L
Therefore,  
Ǹ2 P R  
p
L
L
h
+
(10)  
BTL  
4 V  
DD  
P = Power devilered to load  
V
= Peak voltage on BTL load  
avg = Average current drawn from the power supply  
L
P
P
V
= Power drawn from power supply  
I
V
SUP  
DD  
= RMS voltage on BTL load  
= Power supply voltage  
= Efficiency of a BTL amplifier  
LRMS  
DD  
R = Load resistance  
η
L
BTL  
14  
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BTL amplifier efficiency (continued)  
Table 2 employs equation 10 to calculate efficiencies for four different output power levels. Note that the  
efficiency of the amplifier is quite low for lower power levels and rises sharply as power to the load is increased  
resulting in a nearly flat internal power dissipation over the normal operating range. Note that the internal  
dissipation at full output power is less than in the half power range. Calculating the efficiency for a specific  
systemisthekeytoproperpowersupplydesign. Forastereo1-Waudiosystemwith8-loadsanda5-Vsupply,  
the maximum draw on the power supply is almost 3.25 W.  
Table 2. Efficiency Vs Output Power in 5-V 8-BTL Systems  
Output Power  
(W)  
Efficiency  
(%)  
Peak Voltage  
(V)  
Internal Dissipation  
(W)  
0.25  
0.50  
1.00  
1.25  
31.4  
44.4  
62.8  
70.2  
2.00  
2.83  
4.00  
0.55  
0.62  
0.59  
0.53  
4.47  
High peak voltages cause the THD to increase.  
A final point to remember about Class-AB amplifiers (either SE or BTL) is how to manipulate the terms in the  
efficiency equation to utmost advantage when possible. Note that in equation 10, V is in the denominator.  
DD  
This indicates that as V  
goes down, efficiency goes up.  
DD  
crest factor and thermal considerations  
Class-AB power amplifiers dissipate a significant amount of heat in the package under normal operating  
conditions. AtypicalmusicCDrequires12dBto15dBofdynamicrange, orheadroomabovetheaveragepower  
output, to pass the loudest portions of the signal without distortion. In other words, music typically has a crest  
factor between 12 dB and 15 dB. When determining the optimal ambient operating temperature, the internal  
dissipated power at the average output power level must be used. The TPA0213 data sheet shows that when  
the TPA0213 is operating from a 5-V supply into a 4-speaker 4-W peaks are available. Converting watts to  
dB:  
P
W
4 W  
1 W  
P
+ 10Log  
+ 10Log  
+ 6 dB  
(11)  
dB  
P
ref  
Subtracting the headroom restriction to obtain the average listening level without distortion yields:  
6 dB 15 dB = 9 dB (15-dB crest factor)  
6 dB 12 dB = 6 dB (12-dB crest factor)  
6 dB 9 dB = 3 dB (9-dB crest factor)  
6 dB 6 dB = 0 dB (6-dB crest factor)  
6 dB 3 dB = 3 dB (3-dB crest factor)  
15  
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APPLICATION INFORMATION  
crest factor and thermal considerations (continued)  
Converting dB back into watts:  
PdBń10  
P
+ 10  
  P  
W
ref  
(12)  
+ 63 mW (18-dB crest factor)  
+ 125 mW (15-dB crest factor)  
+ 250 mW (12-dB crest factor)  
+ 500 mW (9-dB crest factor)  
+ 1000 mW (6-dB crest factor)  
+ 2000 mW (3-dB crest factor)  
This is valuable information to consider when attempting to estimate the heat dissipation requirements for the  
amplifier system. Comparing the absolute worst case, which is 2 W of continuous power output with a 3 dB crest  
factor, against 12 dB and 15 dB applications drastically affects maximum ambient temperature ratings for the  
system. Table 3 shows maximum ambient temperatures and TPA0213 internal power dissipation for various  
output-power levels.  
Table 3. TPA0213 Power Rating, 5-V, 3-, Mono  
PEAK OUTPUT POWER  
(W)  
POWER DISSIPATION  
(W)  
MAXIMUM AMBIENT  
TEMPERATURE  
AVERAGE OUTPUT POWER  
4
4
4
4
4
4
2 W (3-dB crest factor)  
1000 mW (6-dB crest factor)  
500 mW (9-dB crest factor)  
250 mW (12-dB crest factor)  
125 mW (15-dB crest factor)  
63 mW (18-dB crest factor)  
1.7  
1.6  
1.4  
1.1  
0.8  
0.6  
3°C  
6°C  
24°C  
51°C  
78°C  
96°C  
Table 4. TPA0213 Power Rating, 5-V, 8-, Stereo  
PEAK OUTPUT POWER  
(W)  
POWER DISSIPATION  
MAXIMUM AMBIENT  
TEMPERATURE  
AVERAGE OUTPUT POWER  
(W)  
2.5  
2.5  
2.5  
2.5  
1250 mW (3-dB crest factor)  
1000 mW (4-dB crest factor)  
500 mW (7-dB crest factor)  
250 mW (10-dB crest factor)  
0.55  
0.62  
0.59  
0.53  
100°C  
94°C  
97°C  
102°C  
The maximum dissipated power, P  
an 8-load. As a result, this simple formula for calculating P  
, is reached at a much lower output power level for an 4-load than for  
Dmax  
may be used for a 4-application:  
Dmax  
2
2V  
DD  
(13)  
P
+
Dmax  
2
p R  
L
However, in the case of an 8-load, the P  
The amplifier may therefore be operated at a higher ambient temperature than required by the P  
for an 8-load.  
occurs at a point well above the normal operating power level.  
Dmax  
formula  
Dmax  
The maximum ambient temperature depends on the heat sinking ability of the PCB system. The derating factor  
for the DGQ package is shown in the dissipation rating table. Converting this to Θ  
:
JA  
1
1
Θ
+
+
+ 58.48°CńW  
(14)  
JA  
0.0171  
Derating Factor  
16  
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APPLICATION INFORMATION  
crest factor and thermal considerations (continued)  
To calculate maximum ambient temperatures, first consider that the numbers from the dissipation graphs are  
per channel so the dissipated power needs to be doubled for two channel operation. Given Θ , the maximum  
JA  
allowable junction temperature, and the total internal dissipation, the maximum ambient temperature can be  
calculated with the following equation. The maximum recommended junction temperature for the TPA0213 is  
150°C. The internal dissipation figures are taken from the Power Dissipation vs Output Power graphs.  
(15)  
(
)
(
)
T Max + T Max * Θ  
P
+ 150 * 58.48 0.8   2 + 56°C 15-dB crest factor  
A
J
JA  
D
NOTE:  
Internal dissipation of 0.8 W is estimated for a 2-W system with 15-dB crest factor per channel.  
Tables 3 and 4 show that for some applications no airflow is required to keep junction temperatures in the  
specified range. The TPA0213 is designed with thermal protection that turns the device off when the junction  
temperature surpasses 150°C to prevent damage to the IC. Tables 3 and 4 were calculated for maximum  
listening volume without distortion. When the output level is reduced the numbers in the table change  
significantly. Also, using 8-speakers dramatically increases the thermal performance by increasing amplifier  
efficiency.  
ST/MN (stereo/mono) operation  
The ability of the TPA0213 to easily switch between mono BTL and stereo SE modes is one of its most important  
cost saving features. This feature eliminates the requirement for an additional headphone amplifier in  
applications where an internal speaker is driven in BTL mode but external stereo headphone or speakers must  
be accommodated. When ST/MN is held high, the input mux selects the RIN and LIN inputs and the output is  
in stereo SE mode. When ST/MN is held low, the input mux selects the mono-in input and the output is in mono  
BTL mode. Control of the ST/MN input can be from a logic-level CMOS source or, more typically, from a  
switch-controlled resistor divider network as shown in Figure 17.  
17  
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ST/MN (stereo/mono) operation (continued)  
C
B
4
BYPASS  
V
DD  
V
DD  
3
1 kΩ  
GND  
8
V
DD  
BYPASS  
50 kΩ  
Mono  
Audio  
Input  
50 kΩ  
C
C
i
i
R
R
1.25*R  
I
I
100 kΩ  
1
5
R
M
U
X
C
C
MONO-IN  
RIN  
Right  
Audio  
Input  
RO/MO+  
6
+
+
BYPASS  
BYPASS  
100 kΩ  
50 kΩ  
50 kΩ  
ST/MN  
7
Stereo/Mono  
Control  
50 kΩ  
1.25*R  
Left  
Audio  
Input  
R
M
U
X
C
C
C
i
R
I
9
2
LIN  
LO/MO10  
+
+
1 kΩ  
BYPASS  
BYPASS  
From  
System Control  
Shutdown  
and Depop  
Circuitry  
SHUTDOWN  
Figure 17. TPA0213 Resistor Divider Network Circuit  
Using a readily available 1/8-in. (3,5 mm) stereo headphone jack, the control switch is closed when no plug is  
inserted. When closed, the 100-k/1-kdivider pulls the ST/MN input low. When a plug is inserted, the 1-kΩ  
resistor is disconnected and the ST/MN input is pulled high. The mono speaker is also physically disconnected  
from the RO/MO+ output so that no sound is heard from the speaker while the headphones are inserted.  
18  
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MECHANICAL DATA  
DGQ (S-PDSO-G10)  
PowerPAD PLASTIC SMALL-OUTLINE PACKAGE  
0,27  
0,17  
M
0,50  
10  
0,25  
6
Thermal Pad  
(See Note D)  
0,15 NOM  
3,05  
2,95  
4,98  
4,78  
Gage Plane  
0,25  
0°ā6°  
1
5
0,69  
0,41  
3,05  
2,95  
Seating Plane  
0,10  
0,15  
0,05  
1,07 MAX  
4073273/A 04/98  
NOTES: A. All linear dimensions are in millimeters.  
B. This drawing is subject to change without notice.  
C. Body dimensions do not include mold flash or protrusion.  
D. The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane.  
This pad is electrically and thermally connected to the backside of the die and possibly selected leads. The dimension of the thermal  
pad is 1,40 mm (height as illustrated) × 1,80 (width as illustrated) mm (maximum). The pad is centered on the bottom of the package.  
PowerPAD is a trademark of Texas Instruments.  
19  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
18-Jul-2006  
PACKAGING INFORMATION  
Orderable Device  
Status (1)  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
Drawing  
TPA0213DGQ  
ACTIVE  
MSOP-  
Power  
PAD  
DGQ  
10  
10  
10  
10  
80 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
TPA0213DGQG4  
TPA0213DGQR  
ACTIVE  
ACTIVE  
ACTIVE  
MSOP-  
Power  
PAD  
DGQ  
DGQ  
DGQ  
80 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
MSOP-  
Power  
PAD  
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
TPA0213DGQRG4  
MSOP-  
Power  
PAD  
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and  
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS  
compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is  
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the  
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take  
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on  
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited  
information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI  
to Customer on an annual basis.  
Addendum-Page 1  
IMPORTANT NOTICE  
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