概述
规格参数
数据手册
替代型号TPA152D 概述
75-mW STEREO AUDIO POWER AMPLIFIER 75毫瓦立体声音频功率放大器 音频放大器 音频/视频放大器
TPA152D 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 零件包装代码： | SOIC |
| 包装说明： | SOP, SOP8,.25 | 针数： | 8 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8542.33.00.01 | Factory Lead Time： | 1 week |
| 风险等级： | 0.8 | 标称带宽： | 20 kHz |
| 商用集成电路类型： | AUDIO AMPLIFIER | 谐波失真： | 0.03% |
| JESD-30 代码： | R-PDSO-G8 | JESD-609代码： | e4 |
| 长度： | 4.9 mm | 湿度敏感等级： | 1 |
| 信道数量： | 2 | 功能数量： | 1 |
| 端子数量： | 8 | 最高工作温度： | 85 °C |
| 最低工作温度： | -40 °C | 标称输出功率： | 0.075 W |
| 封装主体材料： | PLASTIC/EPOXY | 封装代码： | SOP |
| 封装等效代码： | SOP8,.25 | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 260 |
| 认证状态： | Not Qualified | 座面最大高度： | 1.75 mm |
| 子类别： | Audio/Video Amplifiers | 最大压摆率： | 14 mA |
| 最大供电电压 (Vsup)： | 5.5 V | 最小供电电压 (Vsup)： | 4.5 V |
| 表面贴装： | YES | 技术： | CMOS |
| 温度等级： | INDUSTRIAL | 端子面层： | Nickel/Palladium/Gold (Ni/Pd/Au) |
| 端子形式： | GULL WING | 端子节距： | 1.27 mm |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 宽度： | 3.91 mm | Base Number Matches： | 1 |
TPA152D 数据手册
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PDF下载TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
D PACKAGE
(TOP VIEW)
High-Fidelity Line-Out/HP Driver
75-mW Stereo Output
PC Power Supply Compatible
Pop Reduction Circuitry
V 1
O
IN1–
GND
1
2
3
4
8
7
6
5
MUTE
BYPASS
IN2–
V
DD
Internal Mid-Rail Generation
Thermal and Short-Circuit Protection
Surface-Mount Packaging
Pin Compatible With TPA302
V 2
O
description
The TPA152 is a stereo audio power amplifier capable of less than 0.1% THD+N at 1 kHz when delivering
75 mW per channel into a 32-Ω load. THD+N is less than 0.2% across the audio band of 20 to 20 kHz. For
10 kΩ loads, the THD+N performance is better than 0.005% at 1 kHz, and less than 0.01% across the audio
band of 20 to 20 kHz.
The TPA152 is ideal for use as an output buffer for the audio CODEC in PC systems. It is also excellent for use
where a high-performance head phone/line-out amplifier is needed. Depop circuitry is integrated to reduce
transients during power up, power down, and mute mode.
Amplifier gain is externally configured by means of two resistors per input channel and does not require external
compensationfor settings of 1 to 10. The TPA152 is packaged in the 8-pin SOIC (D) package that reduces board
space and facilitates automated assembly.
typical application circuit
R
F
6
1
V
DD
C
Stereo Audio
Input
B
R
I
C
IN1–
C
8
V
O
1
R
–
R
C
3 BYPASS
C
+
I
C
B
R
R
L
Depop
Circuitry
L
From System
Control
Mute
Control
2
4
Stereo
R
I
IN2–
C
C
–
L
V
O
2
5
C
I
+
R
C
R
F
Copyright 2000, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
AVAILABLE OPTIONS
PACKAGED DEVICE
SMALL OUTLINE
T
A
†
TPA152D
–40°C to 85°C
†
TheDpackagesareavailabletapedandreeled.To
order a taped and reeled part, add the suffix R
(e.g., TPA152DR)
Terminal Functions
TERMINAL
I/O
DESCRIPTION
NAME
NO.
BYPASS
3
BYPASS is the tap to the voltage divider for internal mid-supply bias. This terminal should be connected to a 0.1-µF
to 1-µF capacitor.
GND
IN1–
IN2–
MUTE
7
8
4
2
6
1
5
GND is the ground connection.
I
I
IN1– is the inverting input for channel 1.
IN2– is the inverting input for channel 2.
A logic high puts the device into MUTE mode.
I
V
V
V
I
V
V
V
is the supply voltage terminal.
DD
DD
1
2
O
O
1 is the audio output for channel 1.
2 is the audio output for channel 1.
O
O
O
O
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
‡
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
DD
Input voltage , V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to V + 0.3 V
I
DD
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . internally limited (See Dissipation Rating Table)
Operating junction temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 150° C
J
Operating case temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 125° C
C
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
stg
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DISSIPATION RATING TABLE
PACKAGE
T
A
≤ 25°C
DERATING FACTOR
T
A
= 70°C
T = 85°C
A
D
724 mW
5.8 mW/°C
464 mW
376 mW
recommended operating conditions
MIN
4.5
MAX
5.5
UNIT
V
Supply voltage, V
DD
Operating free-air temperature, T
–40
85
°C
A
dc electrical characteristics at T = 25°C, V
= 5 V
DD
A
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
mV
dB
V
OO
Output offset voltage
Supply ripple rejection ratio
Supply current
10
V
= 4.9 V to 5.1 V
DD
See Figure 13
81
5.5
5.5
>1
I
I
14
14
mA
mA
MΩ
DD
Supply current in MUTE
Input impedance
DD(MUTE)
Z
I
ac operating characteristics V
= 5 V, T = 25°C, R = 32 Ω (unless otherwise noted)
DD
A
L
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
†
75
P
O
Output power (each channel)
THD ≤ 0.03%,
Gain = 1,
See Figure 1
mW
P
= 75 mW,
20 Hz–20 kHz, Gain = 1,
O
THD+N Total harmonic distortion plus noise
0.2%
See Figure 2
B
OM
Maximum output power bandwidth
Phase margin
A
= 5,
THD <0.6%, See Figure 2
See Figure 16
>20
80°
65
kHz
V
Open loop,
1 kHz,
Supply ripple rejection ratio
Mute attenuation
C
= 1 µF,
See Figure 12
dB
dB
B
See Figure 15
See Figure 13
110
102
104
6
Ch/Ch output separation
Signal-to-Noise ratio
dB
V
O
= 1 V
,
Gain = 1
See Figure 11
dB
(rms)
V
n
Noise output voltage
See Figure 10
µV(rms)
†
Measured at 1 kHz.
NOTES: 1. The dc output voltage is approximately V /2.
DD
2. Output power is measured at the output pins of the IC at 1 kHz.
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
ac operating characteristics V
= 5 V, T = 25°C, R = 10 kΩ
DD
A
L
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V = 1 V
See Figure 6
,
20 Hz–20 kHz, Gain = 1,
I
(rms)
0.005%
THD+N Total harmonic distortion plus noise
V
= 4 V,
20 Hz–20 kHz, Gain = 1,
O(PP)
0.005%
See Figure 8
B
Maximum output power bandwidth
Phase margin
G = 5,
THD <0.02%, See Figure 6
See Figure 16
>20
80°
65
kHz
OM
Open loop,
1 kHz,
k
Supply voltage rejection ratio
Mute attenuation
C
= 1 µF,
B
See Figure 12
dB
dB
SVR
See Figure 15
See Figure 13
110
102
104
6
Ch/Ch output separation
Signal-to-Noise ratio
dB
V
O
= 1 V
,
Gain = 1,
See Figure 11
dB
(rms)
V
n
Noise output voltage
See Figure 10
µV(rms)
†
Measured at 1 kHz.
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
1, 4
THD+N
THD+N
THD+N
Total harmonic distortion plus noise
Total harmonic distortion plus noise
Total harmonic distortion plus noise
Output noise voltage
vs Output power
vs Frequency
vs Output voltage
vs Frequency
vs Gain
2, 3, 6, 8, 9
5, 7
10
V
n
SNR
Signal-to-noise ratio
11
Supply ripple rejection ratio
Crosstalk
vs Frequency
vs Frequency
vs Frequency
vs Frequency
vs Frequency
vs Supply voltage
vs Load resistance
vs Output power
12
13, 14
15
Mute Attenuation
Open-loop gain and phase
Closed-loop gain and phase
Supply current
16, 17
18
I
19
DD
P
Output power
20
O
D
P
Power dissipation
21
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
vs
OUTPUT POWER
FREQUENCY
2
1
2
1
P
R
= 75 mW
= 32 Ω
f = 1 kHz
O
L
A
= –1 V/V
V
A
V
= –5 V/V
A
V
=– 2 V/V
0.1
0.01
0.1
0.01
A
V
= –1 V/V
0.001
0.001
1
10 20
30
40 50
60
70
80 90
20
100
1k
10k 20k
P
O
– Output Power – mW
f – Frequency – Hz
Figure 1
Figure 2
TOTAL HARMONIC DISTORTION PLUS NOISE
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
vs
FREQUENCY
OUTPUT POWER
0.3
0.1
2
1
A
R
= –1 V/V
= 32 Ω
V
L
R = 32 Ω
L
P
O
= 75 mW
20 kHz
P
O
= 25 mW
0.1
0.01
0.01
1 kHz
20 Hz
P
O
= 50 mW
1k
0.001
0.001
20
100
10k 20k
0.1
1
10
100
f – Frequency – Hz
P
O
– Output Power – mW
Figure 3
Figure 4
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
vs
OUTPUT VOLTAGE
FREQUENCY
2
1
0.1
V
R
= 1 V
(rms)
= 10 kΩ
f = 1 kHz
O
L
A
R
= –1 V/V
= 10 kΩ
V
L
A
= –5 V/V
= –2 V/V
V
0.1
0.01
0.01
A
V
A
V
= –1 V/V
0.001
0.001
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
20
100
1k
10k 20k
V
O
– Output Voltage – V
f – Frequency – Hz
(rms)
Figure 5
Figure 6
TOTAL HARMONIC DISTORTION PLUS NOISE
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
vs
OUTPUT VOLTAGE
FREQUENCY
2
0.1
V
= 4 V
A
R
= –1 V/V
= 10 kΩ
O(PP)
= –1 V/V
V
L
1
A
V
R
= 10 kΩ
L
f = 20 kHz
0.1
0.01
f = 20 Hz
0.01
0.001
f = 1 kHz
0.001
0.1
0.2
0.4
1
2
20
100
1k
f – Frequency – Hz
Figure 8
10k 20k
V
O
– Output Voltage – V
(rms)
Figure 7
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE
OUTPUT NOISE VOLTAGE
vs
vs
FREQUENCY
FREQUENCY
0.1
20
10
V = 1 V
A
V
V
= 5 V
I
(rms)
= –1 V/V
DD
BW = 10 Hz to 22 kHz
R
A
V
= 32 Ω to 10 kΩ
= –1 V/V
L
R
= 32 Ω
L
0.01
R
= 10,47, and 100 kΩ
L
0.001
1
20
20
100
1k
10k 20k
100
1k
10k 20k
f – Frequency – Hz
f – Frequency – Hz
Figure 9
Figure 10
SIGNAL-TO-NOISE RATIO
SUPPLY RIPPLE REJECTION RATIO
vs
GAIN
vs
FREQUENCY
110
105
100
95
0
–10
V
R
= 5 V
= 32 Ω to 10 kΩ
R = 20 kΩ
I
DD
L
–20
–30
–40
–50
–60
–70
–80
C
= 0.1 µF
B
C
= 1 µF
R
= 10 kΩ
B
L
90
R
= 32 Ω
L
85
C
= 2.5 V
B
–90
80
1
–100
2
3
4
5
6
7
8
9
10
20
100
1k
10k 20k
Gain – V/V
f – Frequency – Hz
Figure 11
Figure 12
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
CROSSTALK
vs
FREQUENCY
CROSSTALK
vs
FREQUENCY
–60
–70
–60
–70
P
V
R
C
= 75 mW
O
V
= 1 V
O
= 5 V
= 32 Ω
= 1 µF
DD
V
R
C
= 5 V
= 10 kΩ
= 1 µF
DD
L
B
L
B
A
V
= –1 V/V
A
V
= –1 V/V
–80
–80
–90
–90
–100
–110
Right to Left
Right to Left
Left to Right
–100
–110
–120
–120
–130
Left to Right
10k 20k
20
100
1k
10k 20k
20
100
1k
f – Frequency – Hz
f – Frequency – Hz
Figure 13
Figure 14
MUTE ATTENUATION
vs
FREQUENCY
–70
–80
V
R
C
= 5 V
= 32Ω
= 1 µF
DD
L
B
90
–100
–110
–120
–130
–140
20
100
1k
10k 20k
f – Frequency – Hz
Figure 15
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
OPEN-LOOP GAIN AND PHASE
vs
FREQUENCY
100
80
60
40
20
0
160
No Load
140
120
100
80
60
40
20
0
–20
100
1k
10k
100k
1M
10M
100M
f – Frequency – Hz
Figure 16
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
1
185
180
175
170
0.8
0.6
0.4
0.2
0
–0.2
165
160
155
–0.4
–0.6
R = 20 kΩ
I
R = 20 kΩ
f
L
R
= 32 Ω
C = 1 µF
–0.8
–1
I
A
= –1 V/V
V
10
100
1k
10k
100k
1M
f – Frequency – Hz
Figure 17
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
1
0.8
0.6
0.4
0.2
0
185
180
175
170
–0.2
165
160
155
–0.4
–0.6
R = 20 kΩ
I
R = 20 kΩ
f
L
R
= 10 kΩ
C = 1 µF
I
–0.8
–1
A
= –1 V/V
100k
V
10
100
1k
10k
1M
f – Frequency – Hz
Figure 18
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
OUTPUT POWER
vs
LOAD RESISTANCE
10
9
90
80
70
60
50
40
30
20
THD+N = 0.1%
= –1 V/V
A
V
8
7
6
5
4
3
10
4.5
5
5.5
30 50 70
90 110 130 150 170 190 210
V
DD
– Supply Voltage – V
R
– Load Resistance – Ω
L
Figure 19
Figure 20
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
TYPICAL CHARACTERISTICS
POWER DISSIPATION
vs
OUTPUT POWER
100
80
R
= 32 Ω
L
60
40
20
0
0
5
10
15
20
25
P
O
– Output Power – mW
Figure 21
APPLICATION INFORMATION
selection of components
Figure 22 is a schematic diagram of a typical application circuit.
R
20 kΩ
F
C
1 µF
I
R
20 kΩ
I
C
C
Audio Input 1
330 µF
†
†
R
C
R
8
7
O
1
2
V
1
IN1–
GND
O
20 kΩ
100 Ω
R
32 Ω
R
L
32 Ω
L
Shutdown
(from System Control)
MUTE
IN2
HP
Jack
1 µF
3
4
6
5
V
DD
V
DD
C
1 µF
B
IN2–
V 2
O
C
1 µF
I
R
I
20 kΩ
C
C
330 µF
†
†
R
C
100 Ω
R
O
20 kΩ
R
F
20 kΩ
Audio Input 2
†
These resistors are optional. Adding these resistors improves the depop performance of the TPA152.
Figure 22. TPA152 Typical Application Circuit
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
APPLICATION INFORMATION
gain setting resistors, R and R
F
I
The gain for the TPA152 is set by resistors R and R according to equation 1.
F
I
R
F
Gain
(1)
R
I
Given that the TPA152 is a MOS amplifier, the input impedance is very high, consequently input leakage
currents are not generally a concern although noise in the circuit increases as the value of R increases. In
F
addition, a certain range of R values are required for proper start-up operation of the amplifier. Taken together
F
it is recommended that the effective impedance seen by the inverting node of the amplifier be set between 5
kΩ and 20 kΩ. The effective impedance is calculated in equation 2.
R R
F I
Effective Impedance
(2)
R
R
F
I
As an example, consider an input resistance of 20 kΩ and a feedback resistor of 20 kΩ. The gain of the amplifier
would be –1 and the effective impedance at the inverting terminal would be 10 kΩ, which is within the
recommended range.
For high performance applications, metal film resistors are recommended because they tend to have lower
noise levels than carbon resistors. For values of R above 50 kΩ, the amplifier tends to become unstable due
F
to a pole formed from R and the inherent input capacitance of the MOS input structure. For this reason, a small
F
compensation capacitor of approximately 5 pF should be placed in parallel with R . This, in effect, creates a
F
low-pass filter network with the cutoff frequency defined in equation 3.
1
2 R C
f
(3)
c(lowpass)
F
F
For example if R is 100 kΩ and C is 5 pF then f is 318 kHz, which is well outside the audio range.
co(lowpass)
F
F
input capacitor, C
I
In the typical application, an input capacitor, C , is required to allow the amplifier to bias the input signal to the
I
proper dc level for optimum operation. In this case, C and R form a high-pass filter with the corner frequency
I
I
determined in equation 4.
1
f
(4)
c(highpass)
2 R C
I
I
The value of C is important to consider as it directly affects the bass (low frequency) performance of the circuit.
I
Consider the example where R is 20 kΩ and the specification calls for a flat bass response down to 20 Hz.
I
Equation 4 is reconfigured as equation 5.
1
C
(5)
I
2 R f
c(highpass)
I
In this example, C is 0.40 µF, so one would likely choose a value in the range of 0.47 µF to 1 µF. A further
I
consideration for this capacitor is the leakage path from the input source through the input network (R , C ) and
I
I
thefeedbackresistor(R )totheload. Thisleakagecurrentcreatesadcoffsetvoltageattheinputtotheamplifier
F
that reduces useful headroom, especially in high-gain applications (> 10). For this reason a low-leakage
tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the
capacitor should face the amplifier input in most applications, as the dc level there is held at V /2, which is
DD
likely higher that the source dc level. Please note that it is important to confirm the capacitor polarity in the
application.
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
APPLICATION INFORMATION
power supply decoupling, C
S
The TPA152 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to
ensure that the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also
prevents oscillations for long lead lengths between the amplifier and the speaker. The optimum decoupling is
achieved by using two capacitors of different types that target different types of noise on the power supply leads.
For higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance
(ESR) ceramic capacitor, typically 0.1 µF, placed as close as possible to the device V
filtering lower-frequency noise signals, a larger aluminum electrolytic capacitor of 10 µF or greater placed near
lead, works best. For
DD
the power amplifier is recommended.
midrail bypass capacitor, C
B
The midrail bypass capacitor, C , serves several important functions. During startup or recovery from shutdown
B
mode, C determines the rate at which the amplifier starts up. This helps to push the start-up pop noise into
B
the subaudible range (so slow it can not be heard). The second function is to reduce noise produced by the
power supply caused by coupling into the output drive signal. This noise is from the midrail generation circuit
internal to the amplifier. The capacitor is fed from a 160-kΩ source inside the amplifier. To keep the start-up pop
as low as possible, the relationship shown in equation 6 should be maintained.
1
1
(6)
C
160 kΩ
C R
I
B
I
As an example, consider a circuit where C is 1 µF, C is 1 µF and R is 20 kΩ. Inserting these values into the
B
I
I
equation 9 results in:
6.25 50
which satisfies the rule. Bypass capacitor, C , values of 0.1 µF to 1 µF ceramic or tantalum low-ESR capacitors
B
are recommended for the best THD and noise performance.
output coupling capacitor, C
C
In the typical single-supply single-ended (SE) configuration, an output coupling capacitor (C ) is required to
C
block the dc bias at the output of the amplifier thus preventing dc currents in the load. As with the input coupling
capacitor, the output coupling capacitor and impedance of the load form a high-pass filter governed by
equation 7.
1
2 R C
f
(7)
c(high)
L
C
The main disadvantage, from a performance standpoint, is that the load impedances are typically small, which
drive the low-frequency corner higher. Large values of C are required to pass low frequencies into the load.
C
Consider the example where a C of 68 µF is chosen and loads vary from 32 Ω to 47 kΩ. Table 1 summarizes
C
the frequency response characteristics of each configuration.
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
APPLICATION INFORMATION
Table 1. Common Load Impedances vs Low Frequency Output Characteristics in SE Mode
R
C
LOWEST FREQUENCY
L
C
32 Ω
10,000 Ω
47,000 Ω
68 µF
68 µF
68 µF
73 Hz
0.23 Hz
0.05 Hz
As Table 1 indicates, headphone response is adequate and drive into line level inputs (a home stereo for
example) is very good.
The output coupling capacitor required in single-supply SE mode also places additional constraints on the
selection of other components in the amplifier circuit. With the rules described earlier still valid, add the following
relationship:
1
1
1
(8)
R C
C
160 kΩ
C R
I
L C
B
I
output pull-down resistor, R + R
C
O
Placing a 100-Ω resistor, R , from the output side of the coupling capacitor to ground insures the coupling
C
capacitor, C , is charged before a plug is inserted into the jack. Without this resistor, the coupling capacitor
C
would charge rapidly upon insertion of a plug, leading to an audible pop in the headphones.
Placing a 20-kΩ resistor, R , from the output of the IC to ground insures that the coupling capacitor fully
O
discharges at power down. If the supply is rapidly cycled without this capacitor, a small pop may be audible in
10-kΩ loads.
using low-ESR capacitors
Low-ESR capacitors are recommended throughout this applications section. A real capacitor can be modeled
simply as a resistor in series with an ideal capacitor. The voltage drop across this resistor minimizes the
beneficial effects of the capacitor in the circuit. The lower the equivalent value of this resistance, the more the
real capacitor behaves like an ideal capacitor.
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
MECHANICAL DATA
D (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0.050 (1,27)
0.020 (0,51)
0.014 (0,35)
0.010 (0,25)
M
14
8
0.008 (0,20) NOM
0.244 (6,20)
0.228 (5,80)
0.157 (4,00)
0.150 (3,81)
Gage Plane
0.010 (0,25)
1
7
0°–8°
0.044 (1,12)
A
0.016 (0,40)
Seating Plane
0.004 (0,10)
0.010 (0,25)
0.004 (0,10)
0.069 (1,75) MAX
PINS **
8
14
16
DIM
0.197
(5,00)
0.344
(8,75)
0.394
(10,00)
A MAX
0.189
(4,80)
0.337
(8,55)
0.386
(9,80)
A MIN
4040047/D 10/96
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
D. Falls within JEDEC MS-012
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
Customers are responsible for their applications using TI components.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 2000, Texas Instruments Incorporated
TPA152D CAD模型
引脚图
封装焊盘图
TPA152D 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| TPA152DRG4 | TI | 75-mW STEREO AUDIO POWER AMPLIFIER | 完全替代 |
|
| TPA701DGN | TI | 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER | 类似代替 |
|
| TPA6111A2DR | TI | 150-mW STEREO AUDIO POWER AMPLIFIER | 类似代替 |
|
TPA152D 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| TPA152DG4 | TI | 75-mW STEREO AUDIO POWER AMPLIFIER | 获取价格 |
|
| TPA152DR | TI | Dual Audio Amplifier | 获取价格 |
|
| TPA152DRG4 | TI | 75-mW STEREO AUDIO POWER AMPLIFIER | 获取价格 |
|
| TPA152_06 | TI | 75-mW STEREO AUDIO POWER AMPLIFIER | 获取价格 |
|
| TPA15V | TOPPOWER | 1W 3KVDC Isolated Single and Dual Output DC/DC Converters | 获取价格 |
|
| TPA160A-12-RL | STMICROELECTRONICS | 213V, 30A, SILICON SURGE PROTECTOR | 获取价格 |
|
| TPA160A-18 | STMICROELECTRONICS | 213V, 30A, SILICON SURGE PROTECTOR | 获取价格 |
|
| TPA160B-12 | STMICROELECTRONICS | 193V, 30A, SILICON SURGE PROTECTOR | 获取价格 |
|
| TPA160B-12-RL | STMICROELECTRONICS | 193V, 30A, SILICON SURGE PROTECTOR | 获取价格 |
|
| TPA160B-18 | STMICROELECTRONICS | 193V, 30A, SILICON SURGE PROTECTOR | 获取价格 |
|
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