TPA6101A2D [TI]
50 MW ULTRALOW VOLTAGE FIXED GAIN STEREO HEADPHONE AUDIO POWER AMPLIFIER; 50兆瓦的超低电压,固定增益立体声耳机音频功率放大器型号: | TPA6101A2D |
厂家: | TEXAS INSTRUMENTS |
描述: | 50 MW ULTRALOW VOLTAGE FIXED GAIN STEREO HEADPHONE AUDIO POWER AMPLIFIER |
文件: | 总19页 (文件大小:422K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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ꢇ ꢅ ꢈꢉꢊ ꢋꢌꢀ ꢍꢂꢌ ꢎ ꢊꢈꢏꢎ ꢌꢀꢂꢐ ꢑꢒ ꢓ ꢔꢕ ꢑꢖꢈꢐ ꢂꢔ ꢗ ꢘꢀ ꢑꢍ ꢑꢎ ꢙꢑꢂ ꢖꢁ ꢙ ꢎ ꢗꢑ
ꢂꢋꢖ ꢔꢎ ꢁꢎ ꢊ ꢑꢍ ꢂꢚ ꢁ ꢌꢔ ꢓꢔ ꢑꢍ
SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
D or DGK PACKAGE
(TOP VIEW)
D
D
D
D
D
D
D
D
D
D
Minimal External Components Required
1.6-V to 3.6-V Supply Voltage Range
50-mW Stereo Output
BYPASS
GND
IN1−
1
2
3
4
8
7
6
5
V 1
Low Supply Current . . . 0.75 mA
Low Shutdown Current . . . 50 nA
Gain Set Internally to 2 dB
O
SHUTDOWN
IN2−
V
DD
V 2
O
Pop Reduction Circuitry
Internal Mid-Rail Generation
Thermal and Short-Circuit Protection
Surface-Mount Packaging
− MSOP
− SOIC
description
The TPA6101A2 is a stereo audio power amplifier packaged in either an 8-pin SOIC package or an 8-pin MOSP
package capable of delivering 50 mW of continuous RMS power per channel into 16-Ω loads. Amplifier gain
is internally set to 2 dB (inverting) to save board space by eliminating six external resistors.
The TPA6101A2 is optimized for battery applications because of its low-supply current, shutdown current, and
THD+N. To obtain the low-supply voltage range, the TPA6101A2 biases BYPASS to V /4.
DD
When driving a 16-Ω load with 40-mW output power from 3.3 V, THD+N is 0.08% at 1 kHz, and less than 0.2%
across the audio band of 20 Hz to 20 kHz. For 30 mW into 32-Ω loads, the THD+N is reduced to less than 0.06%
at 1 kHz, and is less than 0.3% across the audio band of 20 Hz to 20 kHz.
typical application circuit
V
V
6
7
DD
V
DD
80 kΩ
80 kΩ
C
S
Audio
Input
V
/4
DD
IN1−
8
1
1
O
−
+
C
80 kΩ
I
C
C
BYPASS
C
B
Audio
Input
80 kΩ
IN2−
4
3
V
O
2
5
2
−
+
C
I
C
C
80 kΩ
From Shutdown
Control Circuit
SHUTDOWN
Bias
Control
80 kΩ
NOTE: All internal resistor values are 20%.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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Copyright 2004, Texas Instruments Incorporated
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1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀ ꢁꢂ ꢃꢄ ꢅ ꢄꢂ ꢆ
ꢇꢅ ꢈꢉꢊ ꢋ ꢌꢀ ꢍ ꢂꢌ ꢎꢊꢈꢏ ꢎꢌꢀꢂꢐ ꢑ ꢒ ꢓꢔ ꢕ ꢑ ꢖꢈꢐꢂ ꢔꢗ ꢘꢀ ꢑꢍ ꢑꢎ ꢙꢑ ꢂꢖꢁꢙꢎ ꢗꢑ
ꢂ ꢋꢖꢔ ꢎ ꢁꢎꢊ ꢑꢍ ꢂꢚ ꢁꢌ ꢔ ꢓꢔ ꢑ ꢍ
SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
AVAILABLE OPTIONS
PACKAGED DEVICE
MSOP
SYMBOLIZATION
T
A
SMALL OUTLINE (D)
MSOP (DGK)
TPA6101A2DGK
−40°C to 85°C
TPA6101A2D
AJM
Terminal Functions
TERMINAL
NAME
I/O
DESCRIPTION
NO.
BYPASS
1
I
Tap to voltage divider for internal mid-supply bias supply. BYPASS is set at V /4. Connect to a 0.1-µF to 1-µF
low-ESR capacitor for best performance.
DD
GND
2
8
4
3
6
7
5
I
I
GND is the ground connection.
IN1−
IN1− is the inverting input for channel 1.
IN2−
I
IN2− is the inverting input for channel 2.
SHUTDOWN
I
Active-low input. When held low, the device is placed in a low-supply current mode.
V
V
V
I
V
V
V
is the supply voltage terminal.
DD
DD
1
2
O
O
1 is the audio output for channel 1.
2 is the audio output for channel 2.
O
O
O
O
†
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Supply voltage, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 V
DD
Input voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to V + 0.3 V
I
DD
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Internally Limited
Operating junction temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
J
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DISSIPATION RATING TABLE
T
≤ 25°C
DERATING FACTOR
T
= 70°C
T = 85°C
A
A
A
PACKAGE
POWER RATING
ABOVE T = 25°C
POWER RATING POWER RATING
A
D
710 mW
5.68 mW/°C
3.75 mW/°C
454 mW
300 mW
369 mW
244 mW
DGK
469 mW
recommended operating conditions
MIN
MAX
UNIT
V
Supply voltage, V
DD
1.6
3.6
60% x V
V
High-level input voltage, V (SHUTDOWN)
IH
DD
25% x V
V
Low-level input voltage, V (SHUTDOWN)
IL
DD
85
Operating free-air temperature, T
−40
°C
A
2
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SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
dc electrical characteristics at T = 25°C, V
= 3.6 V (unless otherwise noted)
A
DD
PARAMETER
TEST CONDITIONS
= 2 dB
V
MIN
TYP
5
MAX
UNIT
mV
dB
V
Output offset voltage
Power supply rejection ratio
Supply current
A
40
OO
PSRR
V
DD
= 3 V to 3.6 V
72
I
SHUTDOWN = 3.6 V
SHUTDOWN = 0 V
0.75
1.5
mA
DD
I
Supply current in SHUTDOWN mode
50
80
250
nA
DD(SD)
|I
|I
|
High-level input current (SHUTDOWN)
Low-level input current (SHUTDOWN)
Input impedance
V
V
= 3.6 V, V = V
DD
1
1
µA
µA
kΩ
IH
DD
I
|
= 3.6 V, V = 0 V
I
IL
DD
Z
I
ac operating characteristics, V
= 3.3 V, T = 25°C, R = 16 Ω
DD
A
L
PARAMETER
TEST CONDITIONS
MIN
TYP
2
MAX
UNIT
dB
G
Gain
P
Output power (each channel)
Total harmonic distortion + noise
Maximum output power BW
Supply ripple rejection ratio
Signal-to-noise ratio
THD ≤ 0.1%,
= 45 mW,
f = 1 kHz
50
mW
O
THD+N
P
O
20−20 kHz
0.4%
> 20
47
B
OM
THD < 0.5%
f = 1 kHz
kHz
dB
k
SVR
SNR
P
O
= 50 mW
86
dB
V
n
Noise output voltage (no-noise weighting filter)
45
µV(rms)
ac operating characteristics, V
= 3.3 V, T = 25°C, R = 32 Ω
DD
A
L
PARAMETER
TEST CONDITIONS
MIN
TYP
2
MAX
UNIT
dB
G
Gain
P
Output power (each channel)
Total harmonic distortion + noise
Maximum output power BW
Supply ripple rejection ratio
Signal-to-noise ratio
THD ≤ 0.1%,
= 30 mW,
f = 1 kHz
35
mW
O
THD+N
P
O
20−20 kHz
0.4%
>20
47
B
OM
THD < 0.4%
f = 1 kHz
kHz
dB
k
SVR
SNR
P
O
= 30 mW
86
dB
V
n
Noise output voltage (no-noise weighting filter)
50
µV(rms)
3
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ꢂ ꢋꢖꢔ ꢎ ꢁꢎꢊ ꢑꢍ ꢂꢚ ꢁꢌ ꢔ ꢓꢔ ꢑ ꢍ
SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
dc electrical characteristics at T = 25°C, V
= 1.6 V (unless otherwise noted)
A
DD
PARAMETER
TEST CONDITIONS
= 2 dB
V
MIN
TYP
5
MAX
UNIT
mV
dB
V
Output offset voltage
Power supply rejection ratio
Supply current
A
40
OO
PSRR
V
DD
= 1.4 V to 1.8 V
80
I
I
SHUTDOWN = 1.6 V
SHUTDOWN = 0 V
0.65
1.2
mA
DD
Supply current in SHUTDOWN mode
High-level input current (SHUTDOWN)
Low-level input current (SHUTDOWN)
Input impedance
50
250
1
nA
µA
µA
kΩ
DD(SD)
|I
|I
|
V
= 1.6 V, V = V
DD
IH
DD
DD
I
|
V
= 1.6 V, V = 0 V
1
IL
I
Z
I
80
ac operating characteristics, V
= 1.6 V, T = 25°C, R = 16 Ω
DD
A
L
PARAMETER
TEST CONDITIONS
MIN
TYP
2
MAX
UNIT
dB
G
Gain
P
Output power (each channel)
Total harmonic distortion + noise
Maximum output power BW
Supply ripple rejection ratio
Signal-to-noise ratio
THD ≤ 0.5%,
f = 1 kHz
10
mW
O
THD+N
P
O
= 9.5 mW, 20−20 kHz
0.06%
> 20
47
B
OM
THD < 1%
f = 1 kHz
kHz
dB
k
SVR
SNR
P
O
= 10 mW
82
dB
V
n
Noise output voltage (no-noise weighting filter)
32
µV(rms)
ac operating characteristics, V
= 1.6 V, T = 25°C, R = 32 Ω
DD
A
L
PARAMETER
TEST CONDITIONS
MIN
TYP
2
MAX
UNIT
dB
G
Gain
P
Output power (each channel)
Total harmonic distortion + noise
Maximum output power BW
Supply ripple rejection ratio
Signal-to-noise ratio
THD ≤ 0.5%,
f = 1 kHz
7.5
mW
O
THD+N
P
O
= 6.5 mW, 20−20 kHz
0.05%
>20
47
B
OM
THD < 1%
f = 1 kHz
kHz
dB
k
SVR
SNR
P
O
= 7.5 mW
84
dB
V
n
Noise output voltage (no-noise weighting filter)
32
µV(rms)
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
vs Frequency
1, 3, 5, 7, 9, 11
2, 4, 6, 8, 10, 12
13, 14
vs Output power
vs Output voltage
vs Load resistance
vs Frequency
THD+N Total harmonic distortion plus noise
P
O
Output power
15, 16
k
Supply ripple rejection ratio
Output noise voltage
Crosstalk
17, 18
SVR
Vn
vs Frequency
19, 20
vs Frequency
21, 22
Closed−loop gain and phase
Supply current
vs Frequency
23, 24, 25, 26
27
I
vs Supply voltage
vs Output power
DD
P
Power dissipation
28
D
4
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ꢂꢋꢖ ꢔꢎ ꢁꢎ ꢊ ꢑꢍ ꢂꢚ ꢁ ꢌꢔ ꢓꢔ ꢑꢍ
SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
vs
FREQUENCY
OUTPUT POWER
10
1
10
1
V
P
C
R
= 1.6 V
= 9.5 mW
= 1 µF
= 16 Ω
V
C
R
= 1.6 V
= 1 µF
= 16 Ω
DD
O
B
L
DD
B
L
f = 1 kHz
0.1
0.1
0.01
0.01
0.001
0.0001
0.001
20
100
1 k
10 k 20 k
1
5
10
40
f − Frequency − Hz
P
O
− Output Power − mW
Figure 1
Figure 2
TOTAL HARMONIC DISTORTION PLUS NOISE
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
vs
FREQUENCY
OUTPUT POWER
10
10
1
V
P
C
R
= 1.6 V
= 6.5 mW
= 1 µF
= 32 Ω
DD
O
B
L
V
C
R
= 1.6 V
= 1 µF
= 32 Ω
DD
B
L
1
0.1
f = 1 kHz
0.1
0.01
0.01
0.001
0.001
0.0001
0.0001
20
100
1 k
10 k 20 k
1
5
10
40
f − Frequency − Hz
P
O
− Output Power − mW
Figure 3
Figure 4
5
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ꢂ ꢋꢖꢔ ꢎ ꢁꢎꢊ ꢑꢍ ꢂꢚ ꢁꢌ ꢔ ꢓꢔ ꢑ ꢍ
SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
vs
FREQUENCY
OUTPUT POWER
10
1
10
1
V
P
C
R
= 1.6 V
= 4.5 mW
= 1 µF
= 50 Ω
DD
O
B
L
V
C
R
= 1.6 V
= 1 µF
= 50 Ω
DD
B
L
f = 1 kHz
0.1
0.1
0.01
0.01
0.001
0.0001
0.001
20
100
1 k
10 k 20 k
1
5
10
40
f − Frequency − Hz
P
O
− Output Power − mW
Figure 5
Figure 6
TOTAL HARMONIC DISTORTION PLUS NOISE
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
vs
FREQUENCY
OUTPUT POWER
10
10
1
V
P
C
R
= 3.3 V
= 45 mW
= 1 µF
= 16 Ω
V
C
R
= 3.3 V
= 1 µF
= 16 Ω
DD
O
B
L
DD
B
L
1
0.1
f = 1 kHz
0.1
0.01
0.01
0.001
0.0001
0.001
20
100
1 k
10 k 20 k
1
10
100
200
f − Frequency − Hz
P
O
− Output Power − mW
Figure 7
Figure 8
6
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ꢂꢋꢖ ꢔꢎ ꢁꢎ ꢊ ꢑꢍ ꢂꢚ ꢁ ꢌꢔ ꢓꢔ ꢑꢍ
SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
vs
OUTPUT POWER
FREQUENCY
10
1
10
1
V
C
R
= 3.3 V
= 1 µF
= 32 Ω
V
P
C
R
= 3.3 V
= 30 mW
= 1 µF
= 32 Ω
DD
B
L
DD
O
B
L
f = 1 kHz
0.1
0.1
0.01
0.001
0.01
0.001
0.0001
1
10
100 200
20
100
1 k
10 k 20 k
P
O
− Output Power − mW
f − Frequency − Hz
Figure 9
Figure 10
TOTAL HARMONIC DISTORTION PLUS NOISE
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
vs
FREQUENCY
OUTPUT POWER
10
1
10
V
P
C
R
= 3.3 V
= 20 mW
= 1 µF
= 50 Ω
DD
O
B
L
V
C
R
= 3.3 V
= 1 µF
= 50 Ω
DD
B
L
f = 1 kHz
1
0.1
0.1
0.01
0.001
0.01
0.0001
0.001
20
100
1 k
10 k 20 k
1
10
100 200
f − Frequency − Hz
P
O
− Output Power − mW
Figure 11
Figure 12
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ꢇꢅ ꢈꢉꢊ ꢋ ꢌꢀ ꢍ ꢂꢌ ꢎꢊꢈꢏ ꢎꢌꢀꢂꢐ ꢑ ꢒ ꢓꢔ ꢕ ꢑ ꢖꢈꢐꢂ ꢔꢗ ꢘꢀ ꢑꢍ ꢑꢎ ꢙꢑ ꢂꢖꢁꢙꢎ ꢗꢑ
ꢂ ꢋꢖꢔ ꢎ ꢁꢎꢊ ꢑꢍ ꢂꢚ ꢁꢌ ꢔ ꢓꢔ ꢑ ꢍ
SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
TYPICAL CHARACTERISTICS
TOTAL HARMONIC DISTORTION PLUS NOISE
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
vs
OUTPUT VOLTAGE
OUTPUT VOLTAGE
10
1
10
1
V
R
C
= 1.6 V
= 10 kΩ
= 1 µF
DD
L
B
V
R
C
= 3.3 V
= 10 kΩ
= 1 µF
DD
L
B
0.1
0.1
0.01
0.01
0.001
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
O
− Output Voltage − V
V
O
− Output Voltage − V
Figure 13
Figure 14
OUTPUT POWER
vs
LOAD RESISTANCE
OUTPUT POWER
vs
LOAD RESISTANCE
15
12
9
150
125
V
= 1.6 V
DD
V
= 3.6 V
DD
THD+N = 1%
Mode = Stereo
THD+N = 1%
Mode = Stereo
Channel 1
100
Channel 2
Channel 1
Channel 2
75
50
25
0
6
3
0
16
20
24
R
28
32
36
40
44
48 50
16
20
24
28
32
36
40
44
48 50
− Load Resistance − Ω
L
R
− Load Resistance − Ω
L
Figure 15
Figure 16
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ꢂꢋꢖ ꢔꢎ ꢁꢎ ꢊ ꢑꢍ ꢂꢚ ꢁ ꢌꢔ ꢓꢔ ꢑꢍ
SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
TYPICAL CHARACTERISTICS
SUPPLY RIPPLE REJECTION RATIO
SUPPLY RIPPLE REJECTION RATIO
vs
vs
FREQUENCY
FREQUENCY
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−100
−110
−120
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
V
C
R
= 3.3 V
= 1 µF
= 32 Ω
V
C
R
= 1.6 V
= 1 µF
= 32 Ω
DD
B
L
DD
B
L
−100
−110
−120
−130
−140
−130
−140
20
100
1 k
10 k 20 k
20
100
1 k
10 k 20 k
f − Frequency − Hz
f − Frequency − Hz
Figure 17
Figure 18
OUTPUT NOISE VOLTAGE
OUTPUT NOISE VOLTAGE
vs
vs
FREQUENCY
FREQUENCY
100
10
1
100
V
C
R
= 1.6 V
= 1 µF
= 16 Ω
DD
B
L
V
C
R
= 3.3 V
= 1 µF
= 16 Ω
DD
B
L
10
1
20
100
1 k
10 k 20 k
20
100
1 k
10 k 20 k
f − Frequency − Hz
f − Frequency − Hz
Figure 19
Figure 20
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ꢂ ꢋꢖꢔ ꢎ ꢁꢎꢊ ꢑꢍ ꢂꢚ ꢁꢌ ꢔ ꢓꢔ ꢑ ꢍ
SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
TYPICAL CHARACTERISTICS
CROSSTALK
vs
FREQUENCY
CROSSTALK
vs
FREQUENCY
0
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−100
−110
−120
V
= 3.3 V
DD
V
P
R
= 1.6 V
= 4.5 mW
= 50 Ω
−10
−20
DD
O
L
P
O
= 20 mW
R = 50 Ω
L
−30
−40
−50
−60
−70
−80
−90
−100
−110
−120
−130
−140
−130
−140
20
100
1 k
10 k 20 k
20
100
1 k
10 k 20 k
f − Frequency − Hz
f − Frequency − Hz
Figure 21
Figure 22
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
40
180°
150°
V
R
T
A
= 1.6 V
DD
= 16 Ω
Phase
30
20
L
= 25°C
120°
90°
10
60°
0
30°
Gain
−10
−20
−30
0°
−30°
−60°
−90°
−40
−120°
−150°
−180°
−50
−60
10
100
1 k
10 k 100 k 1 M 10 M 100 M
f − Frequency − Hz
Figure 23
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ꢂꢋꢖ ꢔꢎ ꢁꢎ ꢊ ꢑꢍ ꢂꢚ ꢁ ꢌꢔ ꢓꢔ ꢑꢍ
SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
TYPICAL CHARACTERISTICS
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
180°
150°
40
30
V
R
T
A
= 1.6 V
DD
= 32 Ω
Phase
L
= 25°C
120°
90°
20
10
60°
0
30°
Gain
0°
−10
−20
−30
−30°
−60°
−90°
−40
−120°
−150°
−180°
−50
−60
1 k
10 k 100 k 1 M 10 M 100 M
10
100
f − Frequency − Hz
Figure 24
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
180°
150°
40
30
V
R
T
A
= 3.3 V
DD
= 16 Ω
Phase
L
= 25°C
120°
90°
20
10
60°
0
30°
Gain
−10
−20
−30
0°
−30°
−60°
−90°
−40
−120°
−150°
−180°
−50
−60
10
100
1 k
10 k 100 k 1 M 10 M 100 M
f − Frequency − Hz
Figure 25
11
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ꢇꢅ ꢈꢉꢊ ꢋ ꢌꢀ ꢍ ꢂꢌ ꢎꢊꢈꢏ ꢎꢌꢀꢂꢐ ꢑ ꢒ ꢓꢔ ꢕ ꢑ ꢖꢈꢐꢂ ꢔꢗ ꢘꢀ ꢑꢍ ꢑꢎ ꢙꢑ ꢂꢖꢁꢙꢎ ꢗꢑ
ꢂ ꢋꢖꢔ ꢎ ꢁꢎꢊ ꢑꢍ ꢂꢚ ꢁꢌ ꢔ ꢓꢔ ꢑ ꢍ
SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
TYPICAL CHARACTERISTICS
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
40
30
180°
150°
V
R
T
A
= 3.3 V
DD
= 32 Ω
Phase
L
= 25°C
120°
90°
20
10
60°
0
30°
Gain
0°
−10
−20
−30
−30°
−60°
−90°
−40
−120°
−150°
−180°
−50
−60
10
100
1 k
10 k 100 k 1 M 10 M 100 M
f − Frequency − Hz
Figure 26
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
POWER DISSIPATION
vs
OUTPUT POWER
1
40
35
30
25
20
V
T
A
Low-to-High
DD
= 25°C
16 Ω
0.9
T = 125°C
A
0.8
0.7
0.6
0.5
T
A
= 25°C
V = 3.3 V
DD
T
A
= −40°C
32 Ω
50 Ω
0.4
0.3
15
10
0.2
5
0
0.1
0
0
0.4 0.8 1.2 1.6
2
2.4 2.8 3.2 3.6
0
10
20
30
40
50
60
70
V
DD
− Supply Voltage − V
P
O
− Output Power − mW
Figure 27
Figure 28
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ꢂꢋꢖ ꢔꢎ ꢁꢎ ꢊ ꢑꢍ ꢂꢚ ꢁ ꢌꢔ ꢓꢔ ꢑꢍ
SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
APPLICATION INFORMATION
input capacitor, C
I
In the typical application, an input capacitor (C ) is required to allow the amplifier to bias the input signal to the
I
proper dc level for optimum operation. In this case, C and R form a high-pass filter with the corner frequency
I
I
determined in equation 1. R is set internally and is fixed at 80 kΩ.
I
1
f
+
c
(1)
2pR C
I
I
The value of C is important to consider, as it directly affects the bass (low frequency) performance of the circuit.
I
Consider the example where the specification calls for a flat-bass response down to 20 Hz. Equation 1 is
reconfigured as equation 2.
1
C +
I
(2)
2pR f
c
I
In this example, C is approximately 0.1 µF. A further consideration for this capacitor is the leakage path from
I
the input source through the input network (R , C ) and the feedback resistor (R ) to the load. This leakage
I
I
F
current creates a dc-offset voltage at the input to the amplifier that reduces useful headroom. For this reason
a low-leakage tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive
side of the capacitor should face the amplifier input in most applications, as the dc level there is held at V /4,
DD
which is likely higher than the source dc level. It is important to confirm the capacitor polarity in the application.
power supply decoupling, C
S
The TPA6101A2 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling
to ensure that the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also
prevents oscillations for long lead lengths between the amplifier and the speaker. The optimum decoupling is
achieved by using two capacitors of different types that target different types of noise on the power supply leads.
For higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance
(ESR) ceramic capacitor, typically 0.1 µF, placed as close as possible to the device V
lead, works best. For
DD
filtering lower-frequency noise signals, a larger, aluminum-electrolytic capacitor of 10 µF or greater placed near
the power amplifier is recommended.
midrail bypass capacitor, C
B
The midrail bypass capacitor (C ) serves several important functions. During start-up, C determines the rate
B
B
at which the amplifier starts up. This helps to push the start-up pop noise into the subaudible range (so low it
can not be heard). The second function is to reduce noise produced by the power supply caused by coupling
into the output drive signal. This noise is from the midrail generation circuit internal to the amplifier. The capacitor
is fed from a 55-kΩ source inside the amplifier. To keep the start-up pop as low as possible, the relationship
shown in equation 3 should be maintained.
1
1
C 55 kΩǓ v ǒC RIǓ
(3)
ǒ
B I
As an example, consider a circuit where C is 1 µF, C is 0.1 µF, and R is 80 kΩ. Inserting these values into the
B
I
I
equation 3 results in: 18.18 ≤ 125 which satisfies the rule. Bypass capacitor (C ) values of 0.47-µF to 1-µF
B
ceramic or tantalum low-ESR capacitors are recommended for the best THD and noise performance.
13
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ꢂ ꢋꢖꢔ ꢎ ꢁꢎꢊ ꢑꢍ ꢂꢚ ꢁꢌ ꢔ ꢓꢔ ꢑ ꢍ
SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
APPLICATION INFORMATION
output coupling capacitor, C
C
In the typical single-supply, single-ended (SE) configuration, an output coupling capacitor (C ) is required to
C
block the dc bias at the output of the amplifier, thus preventing dc currents in the load. As with the input coupling
capacitor, the output coupling capacitor and impedance of the load from a high-pass filter is governed by
equation 4.
1
f
+
c
(4)
2pR C
L
C
The main disadvantage, from a performance standpoint, is that the typically small-load impedances drive the
low-frequency corner higher. Large values of C are required to pass low-frequencies into the load. Consider
C
the example where a C of 68 µF is chosen and loads vary from 32 Ω to 47 kΩ. Table 1 summarizes the
C
frequency response characteristics of each configuration.
Table 1. Common Load Impedances vs Low-Frequency Output Characteristics in SE Mode
R
C
LOWEST FREQUENCY
Ą73 Hz
L
C
32 Ω
10,000 Ω
47,000 Ω
68 µF
68 µF
68 µF
0.23 Hz
0.05 Hz
As Table 1 indicates, headphone response is adequate and drive into line level inputs (a home stereo for
example) is very good.
The output coupling capacitor required in single-supply SE mode also places additional constraints on the
selection of other components in the amplifier circuit. With the rules described earlier still valid, add the following
relationship:
1
1
1
v
ǒ
C 55 kΩǓ ǒC R Ǔ Ơ
(5)
R C
L C
B
I I
using low-ESR capacitors
Low-ESR capacitors are recommended throughout this application. A real capacitor can be modeled simply as
a resistor in series with an ideal capacitor. The voltage drop across this resistor minimizes the beneficial effects
of the capacitor in the circuit. The lower the equivalent value of this resistance, the more the real capacitor
behaves like an ideal capacitor.
3.3-V versus 1.6-V operation
The TPA6101A2 was designed for operation over a supply range of 1.6 V to 3.6 V. There are no special
considerations for 1.6-V versus 3.3-V operation as far as supply bypassing, gain setting, or stability. Supply
current is slightly reduced from 0.75 mA (typical) to 0.65 mA (typical). The most important consideration is that
of output power. Each amplifier can produce a maxium output voltage swing within a few hundred millivolts of
the rails with a 10-kΩ load. However, this voltage swing decreases as the load resistance decreases and the
r
as the output stage transistors becomes more significant. For example, for a 32-Ω load, the maximum
DS(on)
peak output voltage with V
swing effectively reduces the maximum undistorted output power.
= 1.6 V is approximately 0.7 V with no clipping distortion. This reduced voltage
DD
14
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ꢇ ꢅ ꢈꢉꢊ ꢋꢌꢀ ꢍꢂꢌ ꢎ ꢊꢈꢏꢎ ꢌꢀꢂꢐ ꢑꢒ ꢓ ꢔꢕ ꢑꢖꢈꢐ ꢂꢔ ꢗ ꢘꢀ ꢑꢍ ꢑꢎ ꢙꢑꢂ ꢖꢁ ꢙ ꢎ ꢗꢑ
ꢂꢋꢖ ꢔꢎ ꢁꢎ ꢊ ꢑꢍ ꢂꢚ ꢁ ꢌꢔ ꢓꢔ ꢑꢍ
SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
MECHANICAL DATA
D (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PIN SHOWN
0.050 (1,27)
0.020 (0,51)
0.014 (0,35)
0.010 (0,25)
M
14
8
0.008 (0,20) NOM
0.244 (6,20)
0.228 (5,80)
0.157 (4,00)
0.150 (3,81)
Gage Plane
0.010 (0,25)
1
7
0°−ā8°
0.044 (1,12)
A
0.016 (0,40)
Seating Plane
0.004 (0,10)
0.010 (0,25)
0.004 (0,10)
0.069 (1,75) MAX
PINS **
8
14
16
DIM
0.197
(5,00)
0.344
(8,75)
0.394
(10,00)
A MAX
0.189
(4,80)
0.337
(8,55)
0.386
(9,80)
A MIN
4040047/D 10/96
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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ꢂ ꢋꢖꢔ ꢎ ꢁꢎꢊ ꢑꢍ ꢂꢚ ꢁꢌ ꢔ ꢓꢔ ꢑ ꢍ
SLOS331B − AUGUST 2000 − REVISED SEPTEMBER 2004
MECHANICAL INFORMATION
DGK (R-PDSO-G8)
PLASTIC SMALL-OUTLINE PACKAGE
0,38
M
0,65
8
0,25
0,25
5
0,15 NOM
3,05
2,95
4,98
4,78
Gage Plane
0,25
0°−ā6°
1
4
0,69
0,41
3,05
2,95
Seating Plane
0,10
0,15
0,05
1,07 MAX
4073329/B 04/98
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion.
D. Falls within JEDEC MO-187
16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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amplifier.ti.com
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Logic
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logic.ti.com
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Security
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www.ti.com/security
www.ti.com/telephony
www.ti.com/video
microcontroller.ti.com
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Wireless
www.ti.com/wireless
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Copyright 2004, Texas Instruments Incorporated
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TI
TPA6101A2DGK
50 MW ULTRALOW VOLTAGE FIXED GAIN STEREO HEADPHONE AUDIO POWER AMPLIFIERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TPA6101A2DGKR
50-mW ULTRALOW-VOLTAGE, FIXED-GAIN STEREO HEADPHONE AUDOI POWER AMPLIFIERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TPA6101A2DGKRG4
50-mW ULTRALOW-VOLTAGE, FIXED-GAIN STEREO HEADPHONE AUDOI POWER AMPLIFIERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPA6101A2ZQYR
50-mW ULTRALOW-VOLTAGE, FIXED-GAIN STEREO HEADPHONE AUDOI POWER AMPLIFIERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPA6101A2ZQYRG1
50-mW Ultra Low-Voltage, Stereo Headphone Audio Amplifier with Fixed Gain (2dB) 15-BGA MICROSTAR JUNIORWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TPA6101A2_07
50-mW ULTRALOW-VOLTAGE, FIXED-GAIN STEREO HEADPHONE AUDOI POWER AMPLIFIERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TPA6102A2
50 mM ULTRALOW VOLTAGE FIXED-GAIN STEREO HEADPHONE AUDIO POWER AMPLIFIERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPA6102A2D
50 mM ULTRALOW VOLTAGE FIXED-GAIN STEREO HEADPHONE AUDIO POWER AMPLIFIERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TPA6102A2DG4
50-mW Ultra Low-Voltage, Stereo Headphone Audio Amplifier with Fixed Gain (14dB) 8-SOIC -40 to 85Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPA6102A2DGK
50 mM ULTRALOW VOLTAGE FIXED-GAIN STEREO HEADPHONE AUDIO POWER AMPLIFIERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPA6102A2DGKR
50-mM ULTRALOW VOLTAGE FIXED-GAIN STEREO HEADPHONE AUDIO POWER AMPLIFIERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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