TPA6133A2_15 [TI]
138-mW DirectPath Stereo Headphone Amplifier;型号: | TPA6133A2_15 |
厂家: | TEXAS INSTRUMENTS |
描述: | 138-mW DirectPath Stereo Headphone Amplifier |
文件: | 总18页 (文件大小:1135K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TPA6133A2
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SLOS821 –JUNE 2013
138-mW DIRECTPATH™ STEREO HEADPHONE AMPLIFIER
Check for Samples: TPA6133A2
1
FEATURES
DESCRIPTION
The TPA6133A2 is a stereo DirectPath™ headphone
amplifier with GPIO control. The TPA6133A2 has
minimal quiescent current consumption, with a typical
IDD of 4.2 mA, making it optimal for portable
applications. The GPIO control allows the device to
be put in a low power shutdown mode.
2
•
DirectPath™ Ground-Referenced Outputs
–
–
–
–
Eliminates Output DC Blocking Capacitors
Reduces Board Area
Reduces Component Height and Cost
Full Bass Response Without Attenuation
The TPA6133A2 is a high fidelity amplifier with an
SNR of 93 dB. A PSRR greater than 100 dB enables
direct-to-battery connections without compromising
the listening experience. The output noise of 12
μVrms (typical A-weighted) provides a minimal noise
background during periods of silence. Configurable
differential inputs and high CMRR allow for maximum
noise rejection in the noisy environment of a mobile
device.
•
•
Power Supply Voltage Range: 2.5 V to 5.5 V
High Power Supply Rejection Ratio
(>100 dB PSRR)
•
Differential Inputs for Maximum Noise
Rejection (69 dB CMRR)
•
•
High-Impedance Outputs When Disabled
Advanced Pop and Click Suppression
Circuitry
TPA6133A2 is available in a 4 by 4 mm QFN
package.
•
•
GPIO Control for Shutdown
20 Pin, 4 mm x 4 mm QFN Package
APPLICATIONS
•
•
•
•
Mobile Phones
Audio Headsets
Notebook Computers
High Fidelity Applications
SIMPLIFIED APPLICATION DIAGRAM
GPIO
VBAT
2.2KQ
Audio Source
TEST1 TEST2
SD
0.47uF
0.47uF
LEFT_OUTM
LEFTINM
LEFTINP
HPLEFT
LEFT_OUTP
HPRIGHT
0.47uF
0.47uF
RIGHT_OUTM
RIGHT_OUTP
RIGHTINM
RIGHTINP
GND
GND
CPP
CPN
CPVSS
VDD
VDD
VBAT
1uF
1uF
1uF
1uF
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
DirectPath is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated
TPA6133A2
SLOS821 –JUNE 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
FUNCTIONAL BLOCK DIAGRAM
TEST2
TEST1
LEFTINM
LEFTINP
HPLEFT
LEFT
INPUT
STAGE
DEPOP
RIGHTINM
RIGHTINP
HPRIGHT
RIGHT
CURRENT
LIMIT
THERMAL
CPP
SD
CHARGE
PUMP
POWER
MANAGEMENT
SHUTDOWN
CONTROL
CPN
CPVSS
VDD
GND
VDD
GND
Headphone channels and the charge pump are activated by toggling the SD pin to logic 1. The charge pump
generates a negative supply voltage for the output amplifiers. This allows a 0 V bias at the outputs, eliminating
the need for bulky output capacitors. The thermal block detects faults and shuts down the device before damage
occurs. The current limit block prevents the output current from getting high enough to damage the device. The
De-Pop block eliminates audible pops during power-up, power-down, and amplifier enable and disable events.
2
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RJT PACKAGE
(Top VIEW)
20
19
18
17
16
1
2
3
4
5
15
14
13
12
11
LEFTINM
LEFTINP
GND
CPVSS
HPLEFT
GND
Top View
RIGHTINP
RIGHTINM
VDD
HPRIGHT
6
7
8
9
10
Top View QFN Package (RTJ)
PIN FUNCTIONS
PIN
INPUT,
OUTPUT,
POWER
DESCRIPTION
NAME
PIN QFN
Charge pump voltage supply. VDD must be connected to the common VDD voltage
supply. Decouple to GND (pin 19 ) with its own 1 μF capacitor.
VDD
20
P
Charge pump ground. GND must be connected to common supply GND. It is
recommended that this pin be decoupled to the VDD of the charge pump pin (pin 20 on
the QFN).
GND
19
P
Charge pump flying capacitor positive terminal. Connect one side of the flying capacitor
to CPP.
CPP
18
17
1
P
P
I
Charge pump flying capacitor negative terminal. Connect one side of the flying
capacitor to CPN.
CPN
Left channel negative differential input. Impedance must be matched to LEFTINP.
Connect the left input to LEFTINM when using single-ended inputs.
LEFTINM
Left channel positive differential input. Impedance must be matched to LEFTINM. AC
ground LEFTINP near signal source while maintaining matched impedance to
LEFTINM when using single-ended inputs.
LEFTINP
2
I
Negative supply generated by the charge pump. Decouple to pin 19 or a GND plane.
Use a 1 μF capacitor.
CPVSS
15, 16
14
P
O
I
HPLEFT
RIGHTINM
Headphone left channel output. Connect to left terminal of headphone jack.
Right channel negative differential input. Impedance must be matched to RIGHTINP.
Connect the right input to RIGHTINM when using single-ended inputs.
5
Right channel positive differential input. Impedance must be matched to RIGHTINM.
AC ground RIGHTINP near signal source while maintaining matched impedance to
RIGHTINM when using single-ended inputs.
RIGHTINP
GND
4
I
Analog ground. Must be connected to common supply GND. It is recommended that
this pin be used to decouple VDD for analog. Use pin 13 to decouple pin 12 on the QFN
package.
3, 9, 10, 13
P
Analog VDD. VDD must be connected to common VDD supply. Decouple with its own 1-
μF capacitor to analog ground (pin 13).
VDD
SD
12
6
P
I
Shutdown. Active low logic. 5V tolerant input.
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PIN FUNCTIONS (continued)
PIN
INPUT,
OUTPUT,
POWER
DESCRIPTION
NAME
PIN QFN
TEST2
7
8
I
I
Factory test pins. Pull up to VDD supply. See Applications Diagram.
Factory test pins. Pull up to VDD supply. See Applications Diagram.
TEST1
HPRIGHT
11
O
Headphone light channel output. Connect to the right terminal of the headphone jack.
Solder the thermal pad on the bottom of the QFN package to the GND plane of the
PCB. It is required for mechanical stability and will enhance thermal performance.
Thermal pad
Die Pad
P
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range, TA = 25°C (unless otherwise noted)
MIN
MAX
UNIT
Supply voltage, VDD
–0.3
6
V
CPVSS-0.2 V to minimum of
(3.6 V, VDD+0.2 V)
RIGHTINx, LEFTINx
Input voltage
SD, TEST1, TEST2
Output continuous total power dissipation
Operating free-air temperature range, TA
Operating junction temperature range, TJ
Storage temperature range, Tstg
–0.3
7
V
See Dissipation Rating Table
–40
–40
–65
85
150
150
3
°C
°C
°C
kV
ESD Protection
HBM
Minimum Load Impedance
12.8 Ω
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DISSIPATION RATINGS TABLE
T
A ≤ 25°C
DERATING
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
PACKAGE
POWER RATING
FACTOR(1) (2)
RTJ
4100 mW
41 mW/°C
2250 mW
1640 mW
(1) Derating factor measured with JEDEC High K board: 1S2P - One signal layer and two plane layers.
(2) See JEDEC Standard 51-3 for Low-K board, JEDEC Standard 51-7 for High-K board, and JEDEC
Standard 51-12 for using package thermal information. Please see JEDEC document page for
downloadable copies: http://www.jedec.org/download/default.cfm.
AVAILABLE OPTIONS
TA
PACKAGED DEVICES(1)
PART NUMBER
SYMBOL
–40°C to 85°C
20-pin, 4 mm × 4 mm QFN
TPA6133A2RTJ(2)
SIZ
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
Web site at www.ti.com.
(2) The RTJ package is only available taped and reeled. To order, add the suffix “R” to the end of the part number for a reel of 3000, or add
the suffix “T” to the end of the part number for a reel of 250 (that is, TPA6133A2RTJR).
RECOMMENDED OPERATING CONDITIONS
MIN
2.5
MAX
UNIT
V
Supply voltage, VDD
5.5
VIH
VIL
TA
High-level input voltage
Low-level input voltage
Operating free-air temperature
TEST1, TEST2, SD
SD
1.3
V
0.35
85
V
–40
°C
4
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ELECTRICAL CHARACTERISTICS
TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VDD = 2.5 V to 5.5 V, inputs grounded
DC Power supply rejection ratio VDD = 2.5 V to 5.5 V, inputs grounded
MIN
TYP MAX UNIT
|VOS
PSRR
CMRR Common mode rejection ratio
|
Output offset voltage
135 400
μV
dB
dB
–101
–69
-85
VDD = 2.5 V to 5.5 V
TEST1, TEST2
1
10
1
|IIH
|
High-level input current
Low-level input current
Supply current
VDD = 5.5 V, VI = VDD
µA
SD
SD
|IIL|
IDD
VDD = 5.5 V, VI = 0 V
µA
mA
µA
VDD = 2.5 V to 5.5 V, SD = VDD
4.2
6
Shutdown mode, VDD = 2.5V to 5.5 V, SD = 0 V
0.08
1
OPERATING CHARACTERISTICS
VDD = 3.6 V , TA = 25°C, RL = 16 Ω (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
63
MAX UNIT
VDD = 2.5V
VDD = 3.6V
VDD = 5V
Stereo, Outputs out of phase,
THD = 1%, f = 1 kHz, Gain = +4 dB
PO
Output power
133
142
mW
f = 100 Hz
f = 1 kHz
0.0096%
0.007%
0.0021%
-94.3
-92
Total harmonic distortion
plus noise
THD+N
kSVR
PO = 35 mW
f = 20 kHz
200 mVpp ripple, f = 217 Hz
200 mVpp ripple, f = 1 kHz
200 mVpp ripple, f = 20 kHz
SD = VDD
-85
dB
Supply ripple rejection ratio
-77.1
1.597
0.1
Av
Channel DC Gain
Gain matching
Slew rate
V/V
%
ΔAv
0.4
V/µs
µVRMS
Vn
Noise output voltage
VDD = 3.6V, A-weighted, Gain = +4 dB
12
Charge pump switching
frequency
fosc
300
381
500
kHz
Start-up time from shutdown
Differential input impedance
Signal-to-noise ratio
4.8
36.6
93
ms
kΩ
dB
°C
°C
SNR
Po = 35 mW
Threshold
Hysteresis
180
35
Thermal shutdown
HW Shutdown HP output
impedance
ZO
CO
SD = 0 V, measured output to ground.
112
80
Ω
Output capacitance
pF
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Table of Graphs
FIGURE
Total harmonic distortion + noise
Total harmonic distortion + noise
Supply voltage rejection ratio
Common mode rejection ratio
Crosstalk
versus Output power
versus Frequency
versus Frequency
versus Frequency
versus Frequency
1–4
5–12
13-14
15-16
17-18
TYPICAL CHARACTERISTICS
C(PUMP, DECOUPLE, ,BYPASS, CPVSS) = 1 μF, CI = 2.2µF.
All THD + N graphs taken with outputs out of phase (unless otherwise noted).
TOTAL HARMONIC DISTORTION +
TOTAL HARMONIC DISTORTION +
TOTAL HARMONIC DISTORTION +
NOISE
vs
NOISE
vs
NOISE
vs
OUTPUT POWER
OUTPUT POWER
OUTPUT POWER
10
1
10
1
10
1
VDD = 3.6V
f = 1kHz
RL = 16Ω
Stereo
VDD = 3.6V
f = 1kHz
RL = 32Ω
Stereo
VDD = 2.5V
f = 1kHz
RL = 16Ω
Stereo
0.1
0.1
0.1
VDD = 2.5V
VDD = 3.0V
VDD = 3.6V
VDD = 5.0V
0.01
0.001
0.01
0.001
0.01
0.001
Out of Phase
In Phase
Out of Phase
In Phase
0.01
0.1
1
0.01
0.1
1
0.001
0.01
0.1
1
Output Power (W)
Output Power (W)
Output Power (W)
C007
C007
C006
Figure 1.
Figure 2.
Figure 3.
TOTAL HARMONIC DISTORTION +
TOTAL HARMONIC DISTORTION +
TOTAL HARMONIC DISTORTION +
NOISE
vs
NOISE
vs
NOISE
vs
OUTPUT POWER
FREQUENCY
FREQUENCY
10
1
1
1
VDD = 2.5V
RL = 16Ω
VDD = 3.0V
RL = 16Ω
VDD = 2.5V
f = 1kHz
RL = 32Ω
Stereo
0.1
0.1
0.1
0.01
0.01
VDD = 2.5V
VDD = 3.0V
VDD = 3.6V
VDD = 5.0V
0.01
0.001
Po = 1mW
Po = 4mW
Po = 20mW
Po = 5mW
Po = 20mW
Po = 40mW
0.001
0.001
0.001
0.01
0.1
1
20
200
2k
20k
20
200
2k
20k
Output Power (W)
Frequency (Hz)
Frequency (Hz)
C006
C004
C004
Figure 4.
Figure 5.
Figure 6.
6
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TOTAL HARMONIC DISTORTION +
TOTAL HARMONIC DISTORTION +
TOTAL HARMONIC DISTORTION +
NOISE
vs
NOISE
vs
NOISE
vs
FREQUENCY
FREQUENCY
FREQUENCY
1
1
1
VDD = 3.6V
VDD = 5.0V
VDD = 2.5V
RL = 16Ω
RL = 16Ω
RL = 32Ω
0.1
0.1
0.1
0.01
0.01
0.01
Po = 5mW
Po = 5mW
Po = 50mW
Po = 80mW
Po = 1mW
Po = 4mW
Po = 20mW
Po = 35mW
Po = 70mW
0.001
0.001
0.001
20
200
2k
20k
20
200
2k
20k
20
200
2k
20k
Frequency (Hz)
Frequency (Hz)
Frequency (Hz)
C004
C004
C004
Figure 7.
Figure 8.
Figure 9.
TOTAL HARMONIC DISTORTION +
TOTAL HARMONIC DISTORTION +
TOTAL HARMONIC DISTORTION +
NOISE
vs
NOISE
vs
NOISE
vs
FREQUENCY
FREQUENCY
FREQUENCY
1
1
1
VDD = 3.0V
RL = 32Ω
VDD = 3.6V
RL = 32Ω
VDD = 5.0V
RL = 32Ω
0.1
0.1
0.1
0.01
0.01
0.01
Po = 5mW
Po = 20mW
Po = 40mW
Po = 5mW
Po = 35mW
Po = 70mW
Po = 5mW
Po = 50mW
Po = 80mW
0.001
0.001
0.001
20
200
2k
20k
20
200
2k
20k
20
200
2k
20k
Frequency (Hz)
Frequency (Hz)
Frequency (Hz)
C004
C004
C004
Figure 10.
Figure 11.
Figure 12.
SUPPLY VOLTAGE REJECTION
SUPPLY VOLTAGE REJECTION
RATIO
vs
RATIO
vs
COMMON MODE REJECTION RATIO
vs
FREQUENCY
FREQUENCY
FREQUENCY
0
-20
-40
-60
-80
0
-20
-40
-60
-80
0
-10
-20
-30
-40
-50
-60
-70
-80
VDD = 2.5V
VDD = 2.5V
VDD = 2.5V
Vo = 0.1Vrms
Vrip = 0.1VPK
Vrip = 0.1VPK
RL = 16Ω
Ci = 1µF
Stereo
RL = 32Ω
Ci = 1µF
Stereo
RL = 16Ω
Ci = 1µF
VDD = 3.6V
VDD = 5.0V
VDD = 3.6V
VDD = 5.0V
VDD = 3.6V
Stereo
VDD = 5.0V
-100
-100
-120
-120
20
200
2k
20k
20
200
2k
20k
20
200
2k
20k
Frequency (Hz)
Frequency (Hz)
Frequency (Hz)
C010
C010
C010
Figure 13.
Figure 14.
Figure 15.
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COMMON MODE REJECTION RATIO
CROSSTALK
vs
FREQUENCY
CROSSTALK
vs
FREQUENCY
vs
FREQUENCY
0
-10
-20
-30
-40
-50
-60
-70
-80
0
-10
-20
-30
-40
-50
-60
-70
-80
0
-10
-20
-30
-40
-50
-60
-70
-80
VDD = 2.5V
VDD = 3.6V
VDD = 5.0V
VDD = 2.5V
VDD = 3.6V
VDD = 5.0V
VDD = 2.5V
VDD = 3.6V
VDD = 5.0V
Vo = 0.1Vrms
RL = 32Ω
Ci = 1µF
Vo = 1Vrms
RL = 16Ω
Ci = 1µF
Stereo
Vo = 1Vrms
RL = 32Ω
Ci = 1µF
Stereo
Stereo
20
200
2k
20k
20
200
2k
20k
20
200
2k
20k
Frequency (Hz)
Frequency (Hz)
Frequency (Hz)
C010
C010
C010
Figure 16.
Figure 17.
Figure 18.
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APPLICATION INFORMATION
SIMPLIFIED APPLICATIONS CIRCUIT
1uF
1uF
20
19
18
17
16
1
2
3
4
5
15
14
13
12
11
LEFTINM
LEFTINP
GND
CPVSS
HPLEFT
GND
0.47uF
0.47uF
1uF
Top View
RIGHTINP
RIGHTINM
VDD
0.47uF
0.47uF
1uF
HPRIGHT
6
7
8
9
10
2.2KQ
Headphone Amplifiers
Single-supply headphone amplifiers typically require dc-blocking capacitors. The capacitors are required because
most headphone amplifiers have a dc bias on the outputs pin. If the dc bias is not removed, the output signal is
severely clipped, and large amounts of dc current rush through the headphones, potentially damaging them. The
top drawing in Figure 19 illustrates the conventional headphone amplifier connection to the headphone jack and
output signal.
DC blocking capacitors are often large in value. The headphone speakers (typical resistive values of 16 Ω or 32
Ω) combine with the dc blocking capacitors to form a high-pass filter. Equation 1 shows the relationship between
the load impedance (RL), the capacitor (CO), and the cutoff frequency (fC).
1
f +
c
2pR C
L
O
(1)
CO can be determined using Equation 2, where the load impedance and the cutoff frequency are known.
1
C
+
O
2pR f
c
L
(2)
If fc is low, the capacitor must then have a large value because the load resistance is small. Large capacitance
values require large package sizes. Large package sizes consume PCB area, stand high above the PCB,
increase cost of assembly, and can reduce the fidelity of the audio output signal.
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Two different headphone amplifier applications are available that allow for the removal of the output dc blocking
capacitors. The Capless amplifier architecture is implemented in the same manner as the conventional amplifier
with the exception of the headphone jack shield pin. This amplifier provides a reference voltage, which is
connected to the headphone jack shield pin. This is the voltage on which the audio output signals are centered.
This voltage reference is half of the amplifier power supply to allow symmetrical swing of the output voltages. Do
not connect the shield to any GND reference or large currents will result. The scenario can happen if, for
example, an accessory other than a floating GND headphone is plugged into the headphone connector. See the
second block diagram and waveform in Figure 19.
Conventional
VDD
CO
VOUT
GND
VDD/2
CO
Capless
VDD
VOUT
GND
VBIAS
VBIAS
DirectPathTM
VDD
GND
VSS
Figure 19. Amplifier Applications
The DirectPath™ amplifier architecture operates from a single supply but makes use of an internal charge pump
to provide a negative voltage rail. Combining the user provided positive rail and the negative rail generated by
the IC, the device operates in what is effectively a split supply mode. The output voltages are now centered at
zero volts with the capability to swing to the positive rail or negative rail. The DirectPath™ amplifier requires no
output dc blocking capacitors, and does not place any voltage on the sleeve. The bottom block diagram and
waveform of Figure 19 illustrate the ground-referenced headphone architecture. This is the architecture of the
TPA6133A2.
Input-Blocking Capacitors
DC input-blocking capacitors block the dc portion of the audio source, and allow the inputs to properly bias.
Maximum performance is achieved when the inputs of the TPA6133A2 are properly biased. Performance issues
such as pop are optimized with proper input capacitors.
The dc input-blocking capacitors may be removed provided the inputs are connected differentially and within the
input common mode range of the amplifier, the audio signal does not exceed ±3 V, and pop performance is
sufficient.
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CIN is a theoretical capacitor used for mathematical calculations only. Its value is the series combination of the dc
input-blocking capacitors, C(DCINPUT-BLOCKING). Use Equation 3 to determine the value of C(DCINPUT-BLOCKING). For
example, if CIN is equal to 0.22 μF, then C(DCINPUT-BLOCKING) is equal to about 0.47 μF.
1
2
C
C
=
(DCINPUT-BLOCKING)
IN
(3)
The two C(DCINPUT-BLOCKING) capacitors form a high-pass filter with the input impedance of the TPA6133A2. Use
Equation 3 to calculate CIN, then calculate the cutoff frequency using CIN and the differential input impedance of
the TPA6133A2, RIN, using Equation 4. Note that the differential input impedance changes with gain. See for
input impedance values. The frequency and/or capacitance can be determined when one of the two values are
given.
1
1
fc
+
C
+
or
IN
IN
2p R
C
2p fc
R
IN IN
IN IN
(4)
If a high pass filter with a -3 dB point of no more than 20 Hz is desired over all gain settings, the minimum
impedance would be used in the above equation. shows this to be 37 kΩ. The capacitor value by the above
equation would be 0.215 μF. However, this is CIN, and the desired value is for C(DCINPUT-BLOCKING). Multiplying CIN
by 2 yields 0.43 μF, which is close to the standard capacitor value of 0.47 μF. Place 0.47 μF capacitors at each
input terminal of the TPA6133A2 to complete the filter.
Charge Pump Flying Capacitor and CPVSS Capacitor
The charge pump flying capacitor serves to transfer charge during the generation of the negative supply voltage.
The CPVSS capacitor must be at least equal to the flying capacitor in order to allow maximum charge transfer.
Low ESR capacitors are an ideal selection, and a value of 1 µF is typical.
Decoupling Capacitors
The TPA6133A2 is a DirectPath™ headphone amplifier that requires adequate power supply decoupling to
ensure that the noise and total harmonic distortion (THD) are low. Use good low equivalent-series-resistance
(ESR) ceramic capacitors, typically 1.0 µF. Find the smallest package possible, and place as close as possible to
the device VDD lead. Placing the decoupling capacitors close to the TPA6133A2 is important for the performance
of the amplifier. Use a 10 μF or greater capacitor near the TPA6133A2 to filter lower frequency noise signals.
The high PSRR of the TPA6133A2 will make the 10 μF capacitor unnecessary in most applications.
Layout Recommendations
Exposed Pad On TPA6133A2RTJ Package
Solder the exposed metal pad on the TPA6133A2RTJ QFN package to the a pad on the PCB. The pad on the
PCB may be grounded or may be allowed to float (not be connected to ground or power). If the pad is grounded,
it must be connected to the same ground as the GND pins (3, 9, 10, 13, and 19). See the layout and mechanical
drawings at the end of the datasheet for proper sizing. Soldering the thermal pad improves mechanical reliability,
improves grounding of the device, and enhances thermal conductivity of the package.
GND Connections
The GND pin for charge pump should be decoupled to the charge pump VDD pin, and the GND pin adjacent to
the Analog VDD pin should be separately decoupled to each other.
Modes of Operation
The TPA6133A2 supports two modes of operation. When the SD pin is driven to logic 0, the device is in low
power mode where the charge pump is powered down, the headphone channel is disabled and the outputs are
weakly pulled to ground. When the SD pin is driven to logic 1, the device enters an active mode with charge
pump powered up and headphone channel enabled with channel gain of +4dB. The transition from inactive to
active and active to inactive states is done softly to avoid audible artifacts.
Copyright © 2013, Texas Instruments Incorporated
11
Product Folder Links: TPA6133A2
PACKAGE OPTION ADDENDUM
www.ti.com
9-Aug-2013
PACKAGING INFORMATION
Orderable Device
TPA6133A2RTJR
TPA6133A2RTJT
Status Package Type Package Pins Package
Eco Plan Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
-40 to 85
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
ACTIVE
QFN
QFN
RTJ
20
20
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
CU NIPDAU
Level-2-260C-1 YEAR
SIZ
SIZ
ACTIVE
RTJ
250
Green (RoHS
& no Sb/Br)
Level-2-260C-1 YEAR
-40 to 85
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Aug-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TPA6133A2RTJR
TPA6133A2RTJT
QFN
QFN
RTJ
RTJ
20
20
3000
250
330.0
180.0
12.4
12.4
4.25
4.25
4.25
4.25
1.15
1.15
8.0
8.0
12.0
12.0
Q2
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Aug-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TPA6133A2RTJR
TPA6133A2RTJT
QFN
QFN
RTJ
RTJ
20
20
3000
250
367.0
210.0
367.0
185.0
35.0
35.0
Pack Materials-Page 2
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