概述
数据手册TPIC2401 概述
4-CHANNEL COMMON-SOURCE POWER DMOS ARRAY 4通道共源极功率DMOS阵列
TPIC2401 数据手册
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SLIS049 − NOVEMBER 1996
D
D
D
D
D
Low r
. . . 0.3 Ω Typ
DS(on)
KTA PACKAGE
(TOP VIEW)
High Output Voltage . . . 60 V
Pulsed Current . . . 6 A Per Channel
DRAIN4
GATE4
9
8
7
6
5
4
3
2
1
Avalanche Energy Capability . . . 36 mJ
Input Transient Protection . . . 2000 V
DRAIN3
GATE3
description
SOURCE/GND
GATE2
The TPIC2401 is a monolithic power DMOS array
that consists of four electrically isolated N-channel
enhancement-mode
configured with a common source and open
drains. Each transistor features integrated
high-current zener diodes to prevent gate
damage in the event that an overstress condition
occurs. These zener diodes also provide up to
2000 V of ESD protection when tested using the
human-body model.
DRAIN2
GATE1
DMOS
transistors
DRAIN1
The TPIC2401 is offered in a 9-pin PowerFLEX
(KTA) package and is characterized for operation
over the case temperature range of −40°C to
125°C.
schematic
DRAIN1 GATE2
DRAIN2
GATE3 DRAIN3
GATE4
8
DRAIN4
1
4
3
6
7
9
2
GATE1
5
SOURCE/GND
NOTE A: For correct operation, no output pin may be taken below GND.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerFLEX is a trademark of Texas Intruments Incorporated.
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Copyright 1996, Texas Instruments Incorporated
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1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443
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SLIS049 − NOVEMBER 1996
†
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, V
Gate-to-source voltage, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −9 V to 18 V
DS
GS
Continuous drain current, each output, all outputs on, T = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 A
C
Pulsed drain current, each output, I max, T = 25°C (see Note 1 and Figure 7) . . . . . . . . . . . . . . . . . . . . 6 A
O
C
Continuous gate-to-source zener diode current, T = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA
C
Pulsed gate-to-source zener diode current, T = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mA
C
Single-pulse avalanche energy, E , T = 25°C (see Figures 4 and 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 mJ
AS
C
Continuous total power dissipation at (or below) T = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7 W
A
Power dissipation at (or below) T = 75°C, all outputs on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 W
C
Operating virtual junction temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
J
Operating case temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
C
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
electrical characteristics, T = 25°C (unless otherwise noted)
C
PARAMETER
TEST CONDITIONS
MIN
60
TYP
MAX
UNIT
V
V
V
V
V
Drain-to-source breakdown voltage
Gate-to-source threshold voltage
Gate-to-source threshold voltage matching
Gate-to-source breakdown voltage
Source-to-gate breakdown voltage
I
I
= 250 µA,
V
= 0
= V
V
(BR)DSX
D
GS
DS
1.5
2.05
5
2.2
40
GS(th)
= 1 mA,
See Figure 5
V
,
D
GS
V
GS(th)match
(BR)GS
IGS = 250 µA
18
9
V
V
I
250 µA
(BR)SG
SG =
I
= 1.5A,
V
= 10 V,
= 0 V,
D
GS
V
Drain-to-source on-state voltage
0.45
0.85
0.54
1
V
V
DS(on)
F(SD)
See Notes 2 and 3
I
S
= 1.5A,
V
GS
V
Forward on-state voltage, source-to-drain
See Notes 2 and 3 and Figure 12
T
T
= 25°C
0.05
0.5
1
V
V
= 48 V,
= 0
C
DS
GS
I
I
I
Zero-gate-voltage drain current
µA
nA
nA
DSS
= 125°C
10
C
Forward gate current, drain short circuited to
source
V
GS
= 15 V,
V
V
= 0
= 0
20
200
GSSF
GSSR
DS
Reverse gate current, drain short circuited to
source
V
V
= 5 V,
10
0.3
100
0.36
0.6
SG
DS
= 10 V,
=1.5 A,
GS
T
T
= 25°C
C
I
D
r
Static drain-to-source on-state resistance
Ω
DS(on)
See Notes 2 and 3
and Figures 6 and 7
= 125°C
0.48
C
V
= 15 V,
I = 1 A,
D
DS
See Notes 2 and 3 and Figure 9
g
Forward transconductance
0.9
1.15
180
100
S
fs
C
C
Short-circuit input capacitance, common source
225
138
iss
Short-circuit output capacitance, common
source
V
= 25 V,
V
= 0,
oss
DS
f = 1 MHz,
GS
See Figure 11
pF
Short-circuit reverse transfer capacitance,
common source
C
75
100
rss
NOTES: 2. Technique should limit T − T to 10°C maximum.
J
C
3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
2
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SLIS049 − NOVEMBER 1996
source-to-drain diode characteristics, T = 25°C
C
PARAMETER
TEST CONDITIONS
= 0.75 A, = 48 V,
MIN
TYP
MAX
MAX
UNIT
I
V
V
t
Reverse-recovery time
Total diode charge
80
ns
S
DS
di/dt = 100 A/µs,
See Figures 1 and 14
rr
= 0,
GS
Q
180
nC
RR
resistive-load switching characteristics, T = 25°C
C
PARAMETER
TEST CONDITIONS
MIN
TYP
194
430
180
90
UNIT
t
t
t
t
Delay time, V ↑ to V ↓ turn on
GS DS
d(on)
Delay time, V ↓ to V ↑ turn off
GS DS
d(off)
V
t
= 25 V,
DD
= 10 ns,
R
= 25 Ω,
t
en
= 10 ns,
L
ns
See Figure 2
Rise time, V
DS
dis
r
f
Fall time, V
DS
Q
Q
Q
Total gate charge
4
5
0.56
1.93
g
V
= 48 V,
I
D
= 1 A,
V
GS
= 10 V,
DD
See Figure 3
Threshold gate-to-source charge
Gate-to-drain charge
0.45
1.55
5
nC
gs(th)
gd
L
L
Internal drain inductance
Internal source inductance
Internal gate resistance
D
nH
5
S
R
500
Ω
g
thermal resistance
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
72
UNIT
R
R
Junction-to-ambient thermal resistance
All outputs with equal power
All outputs with equal power
One output dissipating power
θJA
θJC
5
°C/W
Junction-to-case thermal resistance
8.5
NOTES:
3
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SLIS049 − NOVEMBER 1996
PARAMETER MEASUREMENT INFORMATION
1
V
V
= 48 V
= 0
= 25°C
DS
GS
Reverse di/dt = 100 A/µs
0.5
0
T
J
†
25% of I
RM
−0.5
−1
Shaded Area = Q
RR
−1.5
−2
†
I
RM
−2.5
t
(SD)
rr
−3
0
20
40
60
80
100
120
140
160
180
200
t − Time − ns
†
I
= maximum recovery current
RM
Figure 1. Reverse-Recovery Current Waveform of Source-to-Drain Diode
V
DD
t
en
t
dis
90%
10%
R
L
10 V
90%
Pulse Generator
(see Note A)
V
GS
V
DS
0
V
GS
DUT
t
R
50 Ω
d(off)
gen
t
d(on)
V
DD
90%
50 Ω
V
DS
10%
V
DS(on)
t
t
r
f
VOLTAGE WAVEFORMS
TEST CIRCUIT
NOTE A: The pulse generator has the following characteristics: t ≤ 10 ns, t
≤ 10 ns, Z = 50 Ω.
en
dis
O
Figure 2. Resistive Switching
4
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SLIS049 − NOVEMBER 1996
PARAMETER MEASUREMENT INFORMATION
Current
Regulator
Q
g
Same Type
12-V
Battery
as DUT
10 V
0.2 µF
50 kΩ
0.3 µF
Q
Q
gs(th)
gd
V
GS
V
DD
DUT
I
G
= 1 mA
Gate Voltage
t − Time − s
0
I
G
Sampling
Resistor
I
D
Sampling
Resistor
Q
= Q − Q
gd
gs
g
WAVEFORM
TEST CIRCUIT
Figure 3. Gate Charge Test Circuit and Waveform
25 V
t
av
t
w
10 V
0
L mH
V
GS
V
Pulse Generator
(see Note A)
DS
I
D
I
AS
(see Note B)
V
GS
I
D
50 Ω
DUT
0
R
gen
V
= 60 V MIN
(BR)DSX
V
DS
50 Ω
0
VOLTAGE AND CURRENT WAVEFORMS
TEST CIRCUIT
NOTES: A. The pulse generator has the following characteristics: t ≤ 10 ns, t ≤ 10 ns, Z = 50 Ω.
r
f
O
B. Input pulse duration (t ) is increased until peak current I
= 1.5 A.
w
AS
I
V
t
av
AS
(BR)DSX
2
Energy test level is defined as E
+
+ 36 mJ minimum where tav + avalanche time.
AS
Figure 4. Single-Pulse Avalanche-Energy Test Circuit and Waveforms
5
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SLIS049 − NOVEMBER 1996
TYPICAL CHARACTERISTICS
GATE-TO-SOURCE THRESHOLD VOLTAGE
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
3
1
I
O
= 2 A
V
DS
= V
GS
0.9
0.8
0.7
0.6
0.5
0.4
0.3
2.5
2
1 mA
2.5
100 µA
V
GS
= 10 V
1
V
GS
= 15 V
0.2
0.1
0
1.5
0
−40 −20
0
20 40 60 80 100 120 140 160
−40 −20
0
T
20 40 60 80 100 120 140 160
T − Junction Temperature − °C
j
− Junction Temperature − °C
J
Figure 5
Figure 6
STATIC DRAIN-TO-SOURCE ON-STATE
DRAIN CURRENT
vs
DRAIN-TO-SOURCE VOLTAGE
vs
DRAIN CURRENT
1
7
T
J
= 25°C
V =
GS
15 V
V
GS
= 10 V
V
= 6 V
6
5
4
3
GS
V
= 5.5 V
GS
∆ V
= 0.4 V
= 25°C Unless
Otherwise Noted
GS
T
J
2
1
0
V
= 4 V
GS
V
= 3.5 V
GS
0.1
1
10
0
1
2
3
4
5
6
7
I
D
− Drain Current − A
V
DS
− Drain-To-Source Voltage − V
Figure 7
Figure 8
6
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SLIS049 − NOVEMBER 1996
TYPICAL CHARACTERISTICS
PERCENTAGE OF UNITS
DRAIN CURRENT
vs
GATE-TO-SOURCE VOLTAGE
vs
FORWARD TRANSCONDUCTANCE
35.9
32.3
28.7
25.1
21.5
17.9
14.4
10.8
6
5
4
Total Number of
Units = 199
V
= 15 V
DS
= 1 A
I
D
T
J
= 40°C
T
= 25°C
J
T
= 150°C
J
3
2
T
J
= 25°C
7.2
3.6
0
1
0
1.108 1.136 1.164 1.192 1.220 1.248 1.276 1.304 1.332
0
1
2
3
4
5
6
7
g
fs
− Forward Transconductance − S
V
GS
− Gate-to-Source Voltage − V
Figure 9
Figure 10
CAPACITANCE
vs
SOURCE-TO-DRAIN DIODE CURRENT
vs
DRAIN-TO-SOURCE VOLTAGE
SOURCE-TO-DRAIN VOLTAGE
500
450
400
10
f = 1 MHz
V
GS
= 0
T
J
= 25°C
C
C
C
(0) = 220 pF
iss
T
J
= 150°C
(0) = 350 pF
(0) = 195 pF
oss
rss
350
300
250
200
150
100
50
T
J
= 25°C
1
T
J
= 40°C
C
iss
C
oss
C
rss
0
0.1
0
4
8
12 16 20 24 28 32 36 40
− Drain-to-Source Voltage − V
0.1
1
10
V
V
SD
− Source-To-Drain Voltage − V
DS
Figure 11
Figure 12
7
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SLIS049 − NOVEMBER 1996
TYPICAL CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE AND
GATE-TO-SOURCE VOLTAGE
vs
REVERSE RECOVERY TIME
vs
GATE CHARGE
REVERSE di/dt
14
70
60
50
120
100
80
I
T
= 0.75 A
= 25°C
V
V
= 48 V
= 0
= 0.75 A
= 25°C
D
J
DS
GS
12
10
8
Q1A, Q1B, Q2A, Q2B
I
T
S
J
See Figure 1
40
30
20
60
V
= 20 V
DD
6
4
V
= 30 V
DD
40
20
0
V
= 48 V
DD
2
0
10
0
V
= 30 V
DD
0
0.4 0.8 1.2 1.6
2
2.4 2.8 3.2 3.6
4
0
50
100 150 200 250 300 350 400
Q
− Gate Charge − nC
Reverse di/dt − A/µs
g
Figure 13
Figure 14
MAXIMUM DRAIN CURRENT
vs
DRAIN-TO-SOURCE VOLTAGE
INFINITE HEATSINK
MAXIMUM PEAK AVALANCHE CURRENT
vs
TIME DURATION OF AVALANCHE
10
10
See Figure 4
T
C
= 25°C
0.5 µs
†
1 ms
DC
T
C
= 25°C
1
†
10 ms
DC
T
C
= 125°C
MAX V
DS
0.1
0.1
1
0.01
1
10
100
0.1
1
10
V
DS
− Drain-to-Source Voltage − V
t
− Time Duration of Avalanche − ms
av
Figure 16
Figure 15
8
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POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443
ꢀꢁ ꢂ ꢃꢄ ꢅꢆ ꢇ
ꢅ ꢈꢃꢉꢊ ꢋꢋꢌꢍ ꢃꢎ ꢏ ꢏꢎ ꢋꢈꢐ ꢎꢑ ꢒꢃꢌ ꢁꢎ ꢓ ꢌꢒ ꢔꢏ ꢎꢐ ꢊ ꢒꢒ ꢊꢕ
SLIS049 − NOVEMBER 1996
THERMAL INFORMATION
NORMALIZED TRANSIENT RESISTANCE
vs
SQUARE-WAVE PULSE DURATION
10
T
C
= 25°C
d = 0.2
d = 0.1
d = 0.05
1
d = 0.02
d = 0.01
t
c
t
w
I
D
0
0.1
0.0001
0.001
0.01
0.1
1
10
t
− Square-Wave Pulse Duration − s
w
†
Package mounted in intimate contact with infinite heat sink.
NOTE A: Z (t) = r(t) R
θJC
θJC
t
t
= pulse duration
= cycle time
w
c
d = duty cycle = t /t
w
c
Figure 17
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443
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