TPIC6B273DWR [TI]

Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current;
TPIC6B273DWR
型号: TPIC6B273DWR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current

光电二极管 逻辑集成电路 触发器
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TPIC6B273  
POWER LOGIC OCTAL D-TYPE LATCH  
SLIS031 – APRIL 1994 – REVISED JULY 1995  
Low r  
. . . 5 Typical  
DS(on)  
DW OR N PACKAGE  
(TOP VIEW)  
Avalanche Energy . . . 30 mJ  
Eight Power DMOS-Transistor Outputs of  
150-mA Continuous Current  
CLR  
D1  
V
CC  
D8  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
500-mA Typical Current-Limiting Capability  
Output Clamp Voltage . . . 50 V  
Low Power Consumption  
D2  
D7  
DRAIN1  
DRAIN2  
DRAIN3  
DRAIN4  
D3  
DRAIN8  
DRAIN7  
15 DRAIN6  
14  
13  
12  
11  
DRAIN5  
D6  
description  
The TPIC6B273 is a monolithic, high-voltage,  
medium-current, power logic octal D-type latch  
with DMOS-transistor outputs designed for use in  
systems that require relatively high load power.  
The device contains a built-in voltage clamp on  
the outputs for inductive transient protection.  
Power driver applications include relays, sole-  
noids, and other medium-current or high-voltage  
loads.  
D4  
D5  
GND  
CLK  
logic symbol  
1
CLR  
CLK  
R
11  
C1  
2
4
5
6
7
The TPIC6B273 contains eight positive-edge-  
triggered D-type flip-flops with a direct clear input.  
Each flip-flop features an open-drain power  
DMOS-transistor output.  
D1  
D2  
D3  
D4  
D5  
D6  
D7  
D8  
1D  
DRAIN1  
DRAIN2  
DRAIN3  
DRAIN4  
DRAIN5  
DRAIN6  
DRAIN7  
DRAIN8  
3
8
9
12  
13  
18  
19  
14  
15  
16  
17  
When clear (CLR) is high, information at the D  
inputs meeting the setup time requirements is  
transferred to the DRAIN outputs on the positive-  
going edge of the clock (CLK) pulse. Clock  
triggering occurs at a particular voltage level and  
is not directly related to the transition time of the  
positive-going pulse. When the clock input (CLK)  
is at either the high or low level, the D input signal  
has no effect at the output. An asynchronous CLR  
is provided to turn all eight DMOS-transistor  
outputs off. When data is low for a given output,  
the DMOS-transistor output is off. When data is  
high, theDMOS-transistoroutputhassink-current  
capability.  
This symbol is in accordance with ANSI/IEEE Standard 91-1984  
and IEC Publication 617-12.  
FUNCTION TABLE  
(each channel)  
INPUTS  
CLK  
OUTPUT  
DRAIN  
CLR  
D
L
H
H
H
X
X
H
L
H
L
H
Outputs are low-side, open-drain DMOS  
transistors with output ratings of 50 V and 150-mA  
continuous sink-current capability. Each output  
provides a 500-mA typical current limit at  
L
X
Latched  
H = high level, L = low level, X = irrelevant  
T
= 25°C. The current limit decreases as the  
C
junction temperature increases for additional  
device protection.  
The TPIC6B273 is characterized for operation over the operating case temperature range of 40°C to 125°C.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPIC6B273  
POWER LOGIC OCTAL D-TYPE LATCH  
SLIS031 – APRIL 1994 – REVISED JULY 1995  
logic diagram (positive logic)  
4
5
6
DRAIN1  
DRAIN2  
DRAIN3  
1
CLR  
1D  
CLR  
2
D1  
11  
C1  
CLK  
CLR  
1D  
3
D2  
C1  
CLR  
1D  
8
D3  
C1  
7
DRAIN4  
DRAIN5  
CLR  
1D  
9
D4  
C1  
14  
15  
16  
CLR  
1D  
12  
D5  
C1  
DRAIN6  
DRAIN7  
CLR  
13  
D6  
1D  
C1  
CLR  
18  
D7  
1D  
C1  
17  
10  
DRAIN8  
GND  
CLR  
19  
D8  
1D  
C1  
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPIC6B273  
POWER LOGIC OCTAL D-TYPE LATCH  
SLIS031 – APRIL 1994 – REVISED JULY 1995  
schematic of inputs and outputs  
EQUIVALENT OF EACH INPUT  
TYPICAL OF ALL DRAIN OUTPUTS  
V
CC  
DRAIN  
50 V  
Input  
25 V  
20 V  
12 V  
GND  
GND  
absolute maximum ratings over recommended operating case temperature range (unless  
otherwise noted)  
Logic supply voltage, V  
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V  
CC  
Logic input voltage range, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 7 V  
Power DMOS drain-to-source voltage, V  
I
(see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V  
DS  
Continuous source-to-drain diode anode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA  
Pulsed source-to-drain diode anode current (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A  
Pulsed drain current, each output, all outputs on, I , T = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . 500 mA  
D
C
Continuous drain current, each output, all outputs on, I , T = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mA  
D
C
Peak drain current single output, I ,T = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA  
DM  
C
Single-pulse avalanche energy, E (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mJ  
AS  
Avalanche current, I (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA  
AS  
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table  
Operating virtual junction temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to 150°C  
J
Operating case temperature range, T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C to 125°C  
C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C  
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTES: 1. All voltage values are with respect to GND.  
2. Each power DMOS source is internally connected to GND.  
3. Pulse duration 100 µs and duty cycle 2%.  
4. DRAIN supply voltage = 15 V, starting junction temperature (T ) = 25°C, L = 200 mH, I  
= 0.5 A (see Figure 4).  
AS  
JS  
DISSIPATION RATING TABLE  
T
25°C  
DERATING FACTOR  
T = 125°C  
C
POWER RATING  
C
PACKAGE  
POWER RATING  
ABOVE T = 25°C  
C
DW  
N
1389 mW  
11.1 mW/°C  
10.5 mW/°C  
278 mW  
1050 mW  
263 mW  
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPIC6B273  
POWER LOGIC OCTAL D-TYPE LATCH  
SLIS031 – APRIL 1994 – REVISED JULY 1995  
recommended operating conditions  
MIN  
MAX  
UNIT  
V
Logic supply voltage, V  
CC  
4.5  
5.5  
High-level input voltage, V  
IH  
0.85 V  
V
CC  
Low-level input voltage, V  
0.15 V  
V
IL  
Pulsed drain output current, T = 25°C, V  
CC  
= 5 V (see Notes 3 and 5)  
CC  
500  
20  
500  
mA  
ns  
ns  
ns  
°C  
C
Setup time, D high before CLK, t (see Figure 2)  
su  
Hold time, D high after CLK, t (see Figure 2)  
20  
h
Pulse duration, t (see Figure 2)  
40  
w
Operating case temperature, T  
40  
125  
C
electrical characteristics, V  
= 5 V, T = 25°C (unless otherwise noted)  
CC  
C
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Drain-to-source breakdown  
voltage  
V
V
I
I
= 1 mA  
50  
V
(BR)DSX  
D
Source-to-drain diode forward  
voltage  
= 100 mA  
0.85  
1
V
SD  
F
I
I
High-level input current  
Low-level input current  
V
V
= 5.5 V,  
= 5.5 V,  
V = V  
CC  
1
–1  
µA  
µA  
IH  
CC  
I
V = 0  
I
IL  
CC  
All outputs off  
All outputs on  
20  
100  
300  
I
I
I
Logic supply current  
Nominal current  
V
= 5.5 V  
µA  
mA  
µA  
CC  
CC  
150  
V
= 0.5 V, I = I ,  
T
T
= 85°C,  
= 125°C  
DS(on)  
N
D
C
90  
N
See Notes 5, 6, and 7  
V
V
= 40 V,  
= 40 V,  
V
CC  
V
CC  
V
CC  
V
CC  
= 5.5 V  
= 5.5 V,  
= 4.5 V  
= 4.5 V,  
0.1  
0.15  
4.2  
5
8
DS  
Off-state drain current  
DSX  
DS  
C
I
I
= 100 mA,  
= 100 mA,  
5.7  
D
Static drain-to-source on-state  
resistance  
See Notes 5 and 6  
and Figures 6 and 7  
D
C
r
6.8  
5.5  
9.5  
8
DS(on)  
T
= 125°C  
I
D
= 350 mA,  
V
CC  
= 4.5 V  
switching characteristics, V  
= 5 V, T = 25°C  
C
CC  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
150  
90  
MAX  
UNIT  
ns  
t
t
t
t
t
t
Propagation delay time, low-to-high-level output from CLK  
Propagation delay time, high-to-low-level output from CLK  
Rise time, drain output  
PLH  
ns  
PHL  
C
= 30 pF,  
See Figures 1, 2, and 8  
I = 100 mA,  
D
L
200  
200  
100  
300  
ns  
r
Fall time, drain output  
ns  
f
Reverse-recovery-current rise time  
Reverse-recovery time  
I
F
= 100 mA,  
di/dt = 20 A/µs,  
a
rr  
ns  
See Notes 5 and 6 and Figure 3  
NOTES: 3. Pulse duration 100 µs and duty cycle 2%.  
5. Technique should limit T – T to 10°C maximum.  
J
C
6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.  
7. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a  
voltage drop of 0.5 V at T = 85°C.  
C
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPIC6B273  
POWER LOGIC OCTAL D-TYPE LATCH  
SLIS031 – APRIL 1994 – REVISED JULY 1995  
thermal resistance  
PARAMETER  
TEST CONDITIONS  
MIN  
MAX  
90  
UNIT  
DW package  
N package  
R
Thermal resistance, junction-to-ambient  
All 8 outputs with equal power  
°C/W  
θJA  
95  
PARAMETER MEASUREMENT INFORMATION  
24 V  
5 V  
20  
5 V  
I
D
CLK  
D
V
CC  
0 V  
5 V  
235 Ω  
Output  
DUT  
11  
1
47,  
1417  
CLK  
0 V  
5 V  
Word  
Generator  
(see Note A)  
DRAIN  
D
C
= 30 pF  
L
CLR  
CLR  
(see Note B)  
0 V  
GND  
10  
24 V  
Output  
0.5 V  
TEST CIRCUIT  
VOLTAGE WAVEFORMS  
Figure 1. Resistive-Load Test Circuit and Voltage Waveforms  
5 V  
D
5 V  
0 V  
5 V  
CLK  
50%  
50%  
24 V  
1
20  
CC  
0 V  
V
CLR  
t
t
PHL  
PLH  
Word  
I
D
Generator  
(see Note A)  
D
24 V  
235 Ω  
DUT  
90%  
90%  
Output  
10%  
10%  
47,  
1417  
Output  
0.5 V  
Word  
Generator  
(see Note A)  
11  
t
t
f
r
DRAIN  
CLK  
SWITCHING TIMES  
C
= 30 pF  
L
GND  
10  
(see Note B)  
5 V  
0 V  
50%  
CLK  
t
su  
TEST CIRCUIT  
t
h
5 V  
0 V  
D
50%  
50%  
t
w
INPUT SETUP AND HOLD WAVEFORMS  
Figure 2. Test Circuit, Switching Times, and Voltage Waveforms  
NOTES: A. The word generator has the following characteristics: t 10 ns, t 10 ns, t = 300 ns, pulsed repetition rate (PRR) = 5 KHz,  
r
f
w
Z
C
= 50 .  
O
L
B.  
includes probe and jig capacitance.  
5
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPIC6B273  
POWER LOGIC OCTAL D-TYPE LATCH  
SLIS031 – APRIL 1994 – REVISED JULY 1995  
PARAMETER MEASUREMENT INFORMATION  
TP K  
DRAIN  
0.1 A  
Circuit  
Under  
Test  
2500 µF  
250 V  
di/dt = 20 A/µs  
+
I
F
25 V  
L = 1 mH  
I
F
(see Note A)  
0
TP A  
25% of I  
RM  
t
2
t
1
t
3
Driver  
I
RM  
R
G
t
V
a
GG  
(see Note B)  
50 Ω  
t
rr  
CURRENT WAVEFORM  
TEST CIRCUIT  
NOTES: A. The DRAIN terminal under test is connected to the TP K test point. All other terminals are connected together and connected to the  
TP A test point.  
B. The V  
amplitude and R are adjusted for di/dt = 20 A/µs. A V  
double-pulse train is used to set I = 0.1 A, where t = 10 µs,  
GG F 1  
GG  
= 7 µs, and t = 3 µs.  
G
t
2
3
Figure 3. Reverse-Recovery-Current Test Circuit and Waveforms of Source-to-Drain Diode  
5 V  
15 V  
t
w
t
av  
20  
5 V  
Input  
V
CC  
10.5 Ω  
1
See Note B  
0 V  
CLR  
I
D
I
= 0.5 A  
AS  
200 mH  
11  
DUT  
I
D
Word  
Generator  
(see Note A)  
CLK  
D
47,  
1417  
V
DS  
DRAIN  
V
= 50 V  
(BR)DSX  
MIN  
GND  
V
DS  
10  
VOLTAGE AND CURRENT WAVEFORMS  
TEST CIRCUIT  
NOTES: A. The word generator has the following characteristics: t 10 ns, t 10 ns, Z = 50 .  
r ≤  
AS  
f
O
B. Input pulse duration, t , is increased until peak current I  
= 0.5 A.  
w
Energy test is defined as E = I  
AS AS  
x V  
x t /2 = 30 mJ.  
(BR)DSX av  
Figure 4. Single-Pulse Avalanche Energy Test Circuit and Waveforms  
6
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPIC6B273  
POWER LOGIC OCTAL D-TYPE LATCH  
SLIS031 – APRIL 1994 – REVISED JULY 1995  
TYPICAL CHARACTERISTICS  
PEAK AVALANCHE CURRENT  
vs  
DRAIN-TO-SOURCE ON-STATE RESISTANCE  
vs  
TIME DURATION OF AVALANCHE  
DRAIN CURRENT  
10  
4
18  
V
= 5 V  
CC  
See Note A  
T
C
= 25°C  
16  
14  
12  
10  
T
C
= 125°C  
2
1
8
6
4
0.4  
T
C
= 25°C  
0.2  
0.1  
T
= 40°C  
C
2
0
0
100  
200  
300  
400  
500  
600  
700  
0.1  
0.2  
0.4  
1
2
4
10  
I – Drain Current – mA  
D
t
– Time Duration of Avalanche – ms  
av  
Figure 5  
Figure 6  
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE  
SWITCHING TIME  
vs  
vs  
LOGIC SUPPLY VOLTAGE  
CASE TEMPERATURE  
8
300  
250  
200  
I
= 100 mA  
I
= 100 mA  
D
D
See Note A  
See Note A  
7
6
t
f
T
= 125°C  
C
t
r
5
4
T
= 25°C  
C
t
t
PLH  
PHL  
150  
100  
50  
3
2
T
C
= – 40°C  
1
0
50 25  
0
25  
50  
75  
100  
125  
4
4.5  
5
5.5  
6
6.5  
7
T
C
– Case Temperature – °C  
V
CC  
– Logic Supply Voltage – V  
Figure 7  
Figure 8  
NOTE C: Technique should limit T – T to 10°C maximum.  
J
C
7
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TPIC6B273  
POWER LOGIC OCTAL D-TYPE LATCH  
SLIS031 – APRIL 1994 – REVISED JULY 1995  
THERMAL INFORMATION  
MAXIMUM CONTINUOUS  
DRAIN CURRENT OF EACH OUTPUT  
vs  
MAXIMUM PEAK DRAIN CURRENT  
OF EACH OUTPUT  
vs  
NUMBER OF OUTPUTS CONDUCTING  
SIMULTANEOUSLY  
NUMBER OF OUTPUTS CONDUCTING  
SIMULTANEOUSLY  
0.5  
0.45  
0.4  
V
CC  
= 5 V  
d = 10%  
d = 20%  
0.45  
0.4  
0.35  
0.3  
0.35  
d = 50%  
0.3  
0.25  
0.2  
T
C
= 25°C  
0.25  
d = 80%  
0.2  
0.15  
0.1  
0.15  
0.1  
T
C
= 100°C  
V
T
= 5 V  
CC  
= 25°C  
T
C
= 125°C  
C
d = t /t  
w period  
0.05  
0.05  
0
= 1 ms/t  
period  
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
N – Number of Outputs Conducting Simultaneously  
N – Number of Outputs Conducting Simultaneously  
Figure 9  
Figure 10  
8
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF  
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL  
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR  
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BE FULLY AT THE CUSTOMER’S RISK.  
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safeguards must be provided by the customer to minimize inherent or procedural hazards.  
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Copyright 2000, Texas Instruments Incorporated  

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Power Logic 8-Bit Shift Register
TI

TPIC6B596

POWER LOGIC 8-BIT SHIFT REGISTER
TI

TPIC6B596DW

POWER LOGIC 8-BIT SHIFT REGISTER
TI