TPS2065-Q1 [TI]

高电平有效且具有输出放电功能的汽车类 1A 负载、2.7-5.5V、70mΩ USB 电源开关;
TPS2065-Q1
型号: TPS2065-Q1
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

高电平有效且具有输出放电功能的汽车类 1A 负载、2.7-5.5V、70mΩ USB 电源开关

开关 电源开关 电源管理电路 电源电路
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TPS2062-Q1, TPS2065-Q1  
www.ti.com  
SLVSA01B MAY 2011REVISED APRIL 2012  
CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES  
Check for Samples: TPS2062-Q1, TPS2065-Q1  
1
FEATURES  
2
Qualified for Automotive Applications  
Bidirectional Switch  
70-mHigh-Side MOSFET  
Ambient Temperature Range: -40°C to 125°C  
Built-in Soft-Start  
1-A Continuous Current  
Thermal and Short-Circuit Protection  
UL Listed - File No. E169910  
Accurate Current Limit  
(1.1 A min, 1.9 A max)  
APPLICATIONS  
Heavy Capacitive Loads  
Short-Circuit Protections  
Operating Range: 2.7 V to 5.5 V  
0.6-ms Typical Rise Time  
Undervoltage Lockout  
TPS2062-Q1  
DGN PACKAGE  
(TOP VIEW)  
TPS2065-Q1  
DGN PACKAGE  
(TOP VIEW)  
Deglitched Fault Report (OC)  
No OC Glitch During Power Up  
1-μA Maximum Standby Supply Current  
GND  
IN  
GND  
IN  
1
2
3
4
8
7
6
5
OC1  
1
2
3
4
8
7
6
5
OUT  
OUT  
OUT  
OUT1  
OUT2  
IN  
EN1  
EN2  
OC2  
OC  
EN or EN  
All enable inputs are active high or low.  
DESCRIPTION  
The TPS2062/5-Q1 power-distribution switch is intended for applications where heavy capacitive loads and  
short-circuits are likely to be encountered. This device incorporates 70-mN-channel MOSFET power switches  
for power-distribution systems that require multiple power switches in a single package. Each switch is controlled  
by a logic enable input. Gate drive is provided by an internal charge pump designed to control the power-switch  
rise times and fall times to minimize current surges during switching. The charge pump requires no external  
components and allows operation from supplies as low as 2.7 V.  
When the output load exceeds the current-limit threshold or a short is present, the device limits the output current  
to a safe level by switching into a constant-current mode, pulling the overcurrent (OCx) logic output low. When  
continuous heavy overloads and short-circuits increase the power dissipation in the switch, causing the junction  
temperature to rise, a thermal protection circuit shuts off the switch to prevent damage. Recovery from a thermal  
shutdown is automatic once the device has cooled sufficiently. Internal circuitry ensures that the switch remains  
off until valid input voltage is present. This power-distribution switch is designed to set current limit at 1.5 A  
typically.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
PowerPAD is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2011–2012, Texas Instruments Incorporated  
 
TPS2062-Q1, TPS2065-Q1  
SLVSA01B MAY 2011REVISED APRIL 2012  
www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
ORDERING INFORMATION(1)  
TA  
PACKAGE(2)  
MSOP – DGN  
VSSOP - DGN  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING  
Reel of 2500  
Reel of 2500  
TPS2062QDGNRQ1  
PSOQ  
PTLQ  
–40°C to 125°C  
TPS2065QDGNRQ1  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
web site at www.ti.com.  
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
ABSOLUTE MAXIMUM RATINGS  
over operating free-air temperature range unless otherwise noted(1)  
(2)  
Input voltage range, VI(IN)  
-0.3 V to 6 V  
-0.3 V to 6 V  
-0.3 V to 6 V  
-0.3 V to 6 V  
Internally limited  
See Dissipation Rating Table  
-40°C to 150°C  
-65°C to 150°C  
2 kV  
Output voltage range(2), VO(OUTx)  
Input voltage range, VI(ENx)  
Voltage range, VI(OCx)  
Continuous output current, IO(OUTx)  
Continuous total power dissipation  
Operating virtual junction temperature range, TJ  
Storage temperature range, Tstg  
Human body model (HBM)  
Electrostatic discharge (ESD) protection  
Charge device model (CDM)  
Machine model (MM)  
1000 V  
100 V  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating  
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) All voltages are with respect to GND.  
DISSIPATING RATING TABLE  
T
A 25°C  
DERATING FACTOR  
ABOVE TA = 25°C  
TA = 125°C  
POWER RATING  
PACKAGE  
POWER RATING  
DGN-8  
2.14 W  
17.123 mW/°C  
428 mW  
RECOMMENDED OPERATING CONDITIONS  
MIN  
2.7  
0
MAX  
5.5  
5.5  
1
UNIT  
V
Input voltage, VI(IN)  
Input voltage, VI(ENx)  
V
Continuous output current, IO(OUTx)  
Ambient temperature, TA  
0
A
-40  
-40  
125  
150  
°C  
°C  
Operating virtual junction temperature, TJ  
2
Copyright © 2011–2012, Texas Instruments Incorporated  
 
TPS2062-Q1, TPS2065-Q1  
www.ti.com  
SLVSA01B MAY 2011REVISED APRIL 2012  
ELECTRICAL CHARACTERISTICS  
over recommended operating junction temperature range, VI(IN) = 5.5 V, IO = 1 A, VI(ENx) = 0 V (unless otherwise noted)  
PARAMETER  
POWER SWITCH  
Static drain-source on-state  
TEST CONDITIONS(1)  
MIN  
TYP  
MAX  
UNIT  
resistance, 5-V operation and 3.3- VI(IN) = 5 V or 3.3 V, IO = 1 A, -40°C TA 125°C  
V operation  
70  
75  
135  
150  
mΩ  
rDS(on)  
Static drain-source on-state  
VI(IN) = 2.7 V, IO = 1 A, -40°C TA 125°C  
resistance, 2.7-V operation(2)  
mΩ  
VI(IN) = 5.5 V  
0.6  
0.4  
1.5  
1
tr  
tf  
Rise time, output  
Fall time, output  
CL = 1 μF, RL = 5 , TA = 25°C  
CL = 1 μF, RL = 5 , TA = 25°C  
ms  
VI(IN) = 2.7 V  
VI(IN) = 5.5 V  
VI(IN) = 2.7 V  
0.05  
0.05  
0.5  
0.5  
ms  
ENABLE INPUT EN OR EN  
VIH  
VIL  
II  
High-level input voltage  
2.7 V VI(IN) 5.5 V  
2.7 V VI(IN) 5.5 V  
VI(ENx) = 0 V or 5.5 V  
CL = 100 μF, RL = 5 Ω  
CL = 100 μF, RL = 5 Ω  
2
V
Low-level input voltage  
Input current  
0.8  
1
-1  
μA  
ms  
ton  
toff  
Turnon time  
3
Turnoff time  
10  
CURRENT LIMIT  
TA = 25°C  
1.1  
1.1  
1.6  
1.5  
1.5  
2.3  
1.9  
2.1  
2.9  
VI(IN) = 5 V, OUT connected to GND,  
Device enabled into short-circuit  
IOS  
Short-circuit output current(1)  
A
A
-40°C TA 125°C  
IOC_TRIP  
Overcurrent trip threshold  
VI(IN) = 5 V, current ramp (100 A/s) on OUT  
SUPPLY CURRENT (TPS2062-Q1)  
TA = 25°C  
0.5  
0.5  
50  
50  
1
1
5
Supply current, low-level output  
No load on OUT, VI(ENx) = 5.5 V  
No load on OUT, VI(ENx) = 0 V  
μA  
μA  
-40°C TA 125°C  
TA = 25°C  
70  
90  
Supply current, high-level output  
-40°C TA 125°C  
-40°C TA 125°C  
TA = 25°C  
Leakage current  
OUT connected to ground, VI(ENx) = 5.5 V  
VI(OUTx) = 5.5 V, IN = ground  
μA  
μA  
Reverse leakage current  
SUPPLY CURRENT (TPS2065-Q1)  
0.2  
TA = 25°C  
0.5  
0.5  
43  
1
5
No load on OUT, VI(ENx) = 5.5 V,  
or VI(ENx) = 0 V  
Supply current, low-level output  
μA  
μA  
-40°C TA 125°C  
TA = 25°C  
60  
70  
No load on OUT, VI(ENx) = 0 V,  
or VI(ENx) = 5.5 V  
Supply current, high-level output  
Leakage current  
-40°C TA 125°C  
43  
OUT connected to ground, VI(EN) = 5.5 V,  
or VI(EN) = 0 V  
-40°C TA 125°C  
1
0
μA  
μA  
Reverse leakage current  
UNDERVOLTAGE LOCKOUT  
Low-level input voltage, IN  
Hysteresis, IN  
VI(OUTx) = 5.5 V, IN = ground  
TA = 25°C  
2
4
2.5  
V
TA = 25°C  
75  
8
mV  
OVERCURRENT OC1 and OC2  
Output low voltage, VOL(OCx)  
Off-state current  
IO(OCx) = 5 mA  
0.4  
1
V
VO(OCx) = 5 V or 3.3 V  
OCx assertion or deassertion  
μA  
ms  
OC deglitch(2)  
15  
THERMAL SHUTDOWN(3)  
Thermal shutdown threshold  
Recovery from thermal shutdown  
Hysteresis  
135  
125  
°C  
°C  
°C  
10  
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account  
separately.  
(2) Not tested in production, specified by design.  
(3) The thermal shutdown only reacts under overcurrent conditions.  
Copyright © 2011–2012, Texas Instruments Incorporated  
3
 
TPS2062-Q1, TPS2065-Q1  
SLVSA01B MAY 2011REVISED APRIL 2012  
www.ti.com  
DEVICE INFORMATION  
Pin Functions - TPS2062-Q1  
PINS  
DESCRIPTION  
TPS2062-Q1  
I/O  
NAME  
EN1  
EN2  
EN1  
EN2  
GND  
IN  
NO.  
3
I
I
I
I
Enable input, logic low turns on power switch IN-OUT1  
Enable input, logic low turns on power switch IN-OUT2  
Enable input, logic high turns on power switch IN-OUT1  
Enable input, logic high turns on power switch IN-OUT2  
Ground  
4
-
-
1
2
I
Input voltage  
OC1  
OC2  
OUT1  
OUT2  
8
O
O
O
O
Overcurrent, open-drain output, active low, IN-OUT1  
Overcurrent, open-drain output, active low, IN-OUT2  
Power-switch output, IN-OUT1  
5
7
6
Power-switch output, IN-OUT2  
Internally connected to GND; used to heat-sink the part to the circuit board traces. Should be  
connected to GND pin.  
PowerPAD™  
-
Functional Block Diagram - TPS2062-Q1  
A. Current sense  
B. Active low (EN) for TPS2062-Q1  
4
Copyright © 2011–2012, Texas Instruments Incorporated  
TPS2062-Q1, TPS2065-Q1  
www.ti.com  
SLVSA01B MAY 2011REVISED APRIL 2012  
Pin Functions - TPS2065-Q1  
PINS  
TPS2065-Q1  
DESCRIPTION  
I/O  
NAME  
EN  
NO.  
-
I
I
Enable input, logic low turns on power switch IN-OUT1  
Enable input, logic high turns on power switch IN-OUT1  
Ground  
EN  
4
GND  
IN  
1
2, 3  
5
I
Input voltage  
OC  
O
O
Overcurrent, open-drain output, active low, IN-OUT1  
Power-switch output, IN-OUT1  
OUT  
6, 7, 8  
Internally connected to GND; used to heat-sink the part to the circuit board traces. Should be  
connected to GND pin.  
PowerPAD™  
-
Functional Block Diagram - TPS2065-Q1  
A. Current sense  
B. Active high (EN) for TPS2065-Q1  
Copyright © 2011–2012, Texas Instruments Incorporated  
5
TPS2062-Q1, TPS2065-Q1  
SLVSA01B MAY 2011REVISED APRIL 2012  
www.ti.com  
PARAMETER MEASUREMENT INFORMATION  
OUT  
t
f
t
r
R
L
C
L
V
90%  
10%  
O(OUT)  
90%  
10%  
TEST CIRCUIT  
50%  
90%  
50%  
50%  
50%  
V
V
I(EN)  
I(EN)  
t
off  
t
off  
t
on  
t
on  
90%  
V
V
O(OUT)  
O(OUT)  
10%  
10%  
VOLTAGE WAVEFORMS  
Figure 1. Test Circuit and Voltage Waveforms  
R
C
T
A
= 5 W,  
= 1 mF  
= 255C  
L
L
V
V
I(EN)  
I(EN)  
5 V/div  
5 V/div  
R = 5 W,  
L
V
O(OUT)  
C = 1 mF  
L
2 V/div  
T
A
= 255C  
V
O(OUT)  
2 V/div  
t − Time − 500 ms/div  
t − Time − 500 ms/div  
Figure 2. Turnon Delay and Rise Time With 1-μF  
Figure 3. Turnoff Delay and Fall Time With 1-μF  
Load  
Load  
6
Copyright © 2011–2012, Texas Instruments Incorporated  
TPS2062-Q1, TPS2065-Q1  
www.ti.com  
SLVSA01B MAY 2011REVISED APRIL 2012  
PARAMETER MEASUREMENT INFORMATION (continued)  
R = 5 W,  
L
C = 100 mF  
V
L
I(EN)  
V
I(EN)  
T
= 255C  
5 V/div  
A
5 V/div  
R = 5 W,  
L
V
O(OUT)  
C = 100 mF  
L
2 V/div  
T
A
= 255C  
V
O(OUT)  
2 V/div  
t − Time − 500 ms/div  
t − Time − 500 ms/div  
Figure 4. Turnon Delay and Rise Time With 100-μF Figure 5. Turnoff Delay and Fall Time With 100-μF  
Load  
Load  
V
IN  
= 5 V  
R = 5 W,  
L
V
I(EN)  
V
T
= 255C  
I(EN)  
A
5 V/div  
5 V/div  
220 mF  
470 mF  
I
O(OUT)  
I
O(OUT)  
100 mF  
500 mA/div  
500 mA/div  
t − Time − 500 ms/div  
t − Time − 1 ms/div  
Figure 6. Short-Circuit Current,  
Device Enabled Into Short  
Figure 7. Inrush Current With Different  
Load Capacitance  
Copyright © 2011–2012, Texas Instruments Incorporated  
7
TPS2062-Q1, TPS2065-Q1  
SLVSA01B MAY 2011REVISED APRIL 2012  
www.ti.com  
PARAMETER MEASUREMENT INFORMATION (continued)  
V
O(OC)  
V
O(OC)  
2 V/div  
2 V/div  
I
O(OUT)  
I
O(OUT)  
1 A/div  
1 A/div  
t − Time − 2 ms/div  
t − Time − 2 ms/div  
Figure 8. 2-Load Connected to Enabled Device  
Figure 9. 1-Load Connected to Enabled Device  
TYPICAL CHARACTERISTICS  
TURNON TIME  
vs  
TURNOFF TIME  
vs  
INPUT VOLTAGE  
INPUT VOLTAGE  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
2
C = 100 mF,  
C = 100 mF,  
L
L
R = 5 W,  
R = 5 W,  
L
L
T
A
= 255C  
T
A
= 255C  
1.9  
1.8  
1.7  
1.6  
1.5  
0.1  
0
2
3
4
5
6
2
3
4
5
6
V − Input Voltage − V  
I
V − Input Voltage − V  
I
Figure 10.  
Figure 11.  
8
Copyright © 2011–2012, Texas Instruments Incorporated  
TPS2062-Q1, TPS2065-Q1  
www.ti.com  
SLVSA01B MAY 2011REVISED APRIL 2012  
TYPICAL CHARACTERISTICS (continued)  
RISE TIME  
vs  
FALL TIME  
vs  
INPUT VOLTAGE  
INPUT VOLTAGE  
0.25  
0.2  
0.6  
C
R
T
= 1 mF,  
= 5 W,  
= 255C  
C
R
T
= 1 mF,  
= 5 W,  
= 255C  
L
L
L
L
A
A
0.5  
0.4  
0.15  
0.1  
0.3  
0.2  
0.05  
0
0.1  
0
2
3
4
5
6
2
3
4
5
6
V − Input Voltage − V  
I
V − Input Voltage − V  
I
Figure 12.  
Figure 13.  
TPS2062-Q1  
TPS2065-Q1  
SUPPLY CURRENT, OUTPUT ENABLED  
SUPPLY CURRENT, OUTPUT ENABLED  
vs  
vs  
JUNCTION TEMPERATURE  
JUNCTION TEMPERATURE  
60  
50  
40  
30  
20  
70  
V = 5.5 V  
I
V = 5.5 V  
I
60  
50  
40  
30  
20  
10  
0
V = 5 V  
I
V = 5 V  
I
V = 3.3 V  
I
V = 2.7 V  
I
V = 2.7 V  
I
V = 3.3 V  
I
10  
0
−50  
0
50  
100  
150  
−50  
0
50  
100  
150  
T − Junction Temperature − 5C  
J
T − Junction Temperature − 5C  
J
Figure 14.  
Figure 15.  
Copyright © 2011–2012, Texas Instruments Incorporated  
9
 
TPS2062-Q1, TPS2065-Q1  
SLVSA01B MAY 2011REVISED APRIL 2012  
www.ti.com  
TYPICAL CHARACTERISTICS (continued)  
TPS2062-Q1  
SUPPLY CURRENT, OUTPUT DISABLED  
vs  
TPS2065-Q1  
SUPPLY CURRENT, OUTPUT DISABLED  
vs  
JUNCTION TEMPERATURE  
JUNCTION TEMPERATURE  
0.5  
0.45  
0.4  
0.5  
V = 5.5 V  
I
V = 5.5 V  
I
0.45  
V = 5 V  
I
0.4  
0.35  
0.3  
V = 5 V  
I
0.35  
0.3  
V = 3.3 V  
I
V = 3.3 V  
I
V = 2.7 V  
I
V = 2.7 V  
I
0.25  
0.2  
0.25  
0.2  
0.15  
0.1  
0.15  
0.1  
0.05  
0.05  
0
0
−50  
0
50  
100  
150  
−50  
0
50  
100  
150  
T − Junction Temperature − 5C  
J
T − Junction Temperature − 5C  
J
Figure 16.  
Figure 17.  
STATIC DRAIN-SOURCE ON-STATE RESISTANCE  
SHORT-CIRCUIT OUTPUT CURRENT  
vs  
vs  
JUNCTION TEMPERATURE  
JUNCTION TEMPERATURE  
120  
100  
80  
60  
40  
20  
0
1.56  
1.54  
1.52  
1.5  
V = 2.7 V  
I
I
O
= 0.5 A  
Out1 = 5 V  
V = 3.3 V  
I
Out1 = 3.3 V  
Out1 = 2.7 V  
1.48  
1.46  
1.44  
1.42  
1.4  
V = 5 V  
I
V = 5.5 V  
I
1.38  
1.36  
1.34  
−50  
0
50  
100  
150  
−50  
0
50  
100  
150  
T − Junction Temperature − 5C  
J
T − Junction Temperature − 5C  
J
Figure 18.  
Figure 19.  
10  
Copyright © 2011–2012, Texas Instruments Incorporated  
 
 
TPS2062-Q1, TPS2065-Q1  
www.ti.com  
SLVSA01B MAY 2011REVISED APRIL 2012  
TYPICAL CHARACTERISTICS (continued)  
THRESHOLD TRIP CURRENT  
UNDERVOLTAGE LOCKOUT  
vs  
vs  
INPUT VOLTAGE  
JUNCTION TEMPERATURE  
2.3  
2.5  
UVLO Rising  
T
A
= 255C  
Load Ramp = 1A/10 ms  
2.26  
2.3  
2.1  
1.9  
1.7  
1.5  
2.22  
2.18  
UVLO Falling  
2.14  
2.1  
−50  
0
50  
100  
150  
2.5  
3
3.5  
4
4.5  
5
5.5  
6
T − Junction Temperature − 5C  
J
V − Input Voltage − V  
I
Figure 20.  
Figure 21.  
CURRENT-LIMIT RESPONSE  
vs  
PEAK CURRENT  
200  
150  
100  
V = 5 V,  
I
T
= 255C  
A
50  
0
0
2.5  
5
7.5  
10  
12.5  
Peak Current − A  
Figure 22.  
Copyright © 2011–2012, Texas Instruments Incorporated  
11  
TPS2062-Q1, TPS2065-Q1  
SLVSA01B MAY 2011REVISED APRIL 2012  
www.ti.com  
APPLICATION INFORMATION  
POWER-SUPPLY CONSIDERATIONS  
TPS2062  
2
Power Supply  
2.7 V to 5.5 V  
IN  
7
6
Load  
Load  
OUT1  
0.1 µF  
0.1 µF  
0.1 µF  
22 µF  
22 µF  
8
OC1  
EN1  
OC2  
3
5
OUT2  
4
EN2  
GND  
1
Figure 23. Typical Application  
A 0.01-μF to 0.1-μF ceramic bypass capacitor between IN and GND, close to the device, is recommended.  
Placing a high-value electrolytic capacitor on the output pin(s) is recommended when the output load is heavy.  
This precaution reduces power-supply transients that may cause ringing on the input. Additionally, bypassing the  
output with a 0.01-μF to 0.1-μF ceramic capacitor improves the immunity of the device to short-circuit transients.  
OVERCURRENT  
A sense FET is employed to check for overcurrent conditions. Unlike current-sense resistors, sense FETs do not  
increase the series resistance of the current path. When an overcurrent condition is detected, the device  
maintains a constant output current and reduces the output voltage accordingly. Complete shutdown occurs only  
if the fault is present long enough to activate thermal limiting.  
Three possible overload conditions can occur. In the first condition, the output has been shorted before the  
device is enabled or before VI(IN) has been applied (see Figure 14). The TPS206x-Q1 senses the short and  
immediately switches into a constant-current output.  
In the second condition, a short or an overload occurs while the device is enabled. At the instant the overload  
occurs, high currents may flow for a short period of time before the current-limit circuit can react. After the  
current-limit circuit has tripped (reached the overcurrent trip threshold), the device switches into constant-current  
mode.  
In the third condition, the load has been gradually increased beyond the recommended operating current. The  
current is permitted to rise until the current-limit threshold is reached or until the thermal limit of the device is  
exceeded (see Figure 16). The TPS2065-Q1 and TPS2062-Q1 are capable of delivering current up to the  
current-limit threshold without damaging the device. Once the threshold has been reached, the device switches  
into its constant-current mode.  
OC RESPONSE  
The OCx open-drain output is asserted (active low) when an overcurrent or overtemperature shutdown condition  
is encountered after a 10-ms deglitch timeout. The output remains asserted until the overcurrent or  
overtemperature condition is removed. Connecting a heavy capacitive load to an enabled device can cause a  
momentary overcurrent condition; however, no false reporting on OCx occurs due to the 10-ms deglitch circuit.  
The TPS2065-Q1 and TPS2062-Q1 are designed to eliminate false overcurrent reporting. The internal  
overcurrent deglitch eliminates the need for external components to remove unwanted pulses. OCx is not  
deglitched when the switch is turned off due to an overtemperature shutdown.  
12  
Copyright © 2011–2012, Texas Instruments Incorporated  
TPS2062-Q1, TPS2065-Q1  
www.ti.com  
SLVSA01B MAY 2011REVISED APRIL 2012  
V+  
R
pullup  
TPS2062  
GND  
OC1  
OUT1  
OUT2  
OC2  
IN  
EN1  
EN2  
Figure 24. Typical Circuit for the OC Pin  
POWER DISSIPATION AND JUNCTION TEMPERATURE  
The low on-resistance on the N-channel MOSFET allows the small surface-mount packages to pass large  
currents. The thermal resistances of these packages are high compared to those of power packages; it is good  
design practice to check power dissipation and junction temperature. Begin by determining the rDS(on) of the N-  
channel MOSFET relative to the input voltage and operating temperature. As an initial estimate, use the highest  
operating ambient temperature of interest and read rDS(on) from Figure 18. Using this value, the power dissipation  
per switch can be calculated by:  
PD = rDS(on)× I2  
Multiply this number by the number of switches being used. This step renders the total power dissipation from  
the N-channel MOSFETs.  
The thermal resistance, RθJA = 1 / (DERATING FACTOR), where DERATING FACTOR is obtained from the  
Dissipation Ratings Table. Thermal resistance is a strong function of the printed circuit board construction , and  
the copper trace area connecting the integrated circuit.  
Finally, calculate the junction temperature:  
TJ = PD x RθJA + TA  
Where:  
TA= Ambient temperature °C  
θJA = Thermal resistance  
PD = Total power dissipation based on number of switches being used.  
R
Compare the calculated junction temperature with the initial estimate. If they do not agree within a few degrees,  
repeat the calculation, using the calculated value as the new estimate. Two or three iterations are generally  
sufficient to get a reasonable answer.  
THERMAL PROTECTION  
Thermal protection prevents damage to the IC when heavy-overload or short-circuit faults are present for  
extended periods of time. The TPS2065-Q1 and TPS2062-Q1 implement a thermal sensing to monitor the  
operating junction temperature of the power distribution switch. In an overcurrent or short-circuit condition, the  
junction temperature rises due to excessive power dissipation. Once the die temperature rises above a minimum  
of 135°C due to overcurrent conditions, the internal thermal sense circuitry turns the power switch off, thus  
preventing the power switch from damage. Hysteresis is built into the thermal sense circuit, and after the device  
has cooled approximately 10°C, the switch turns back on. The switch continues to cycle in this manner until the  
load fault or input power is removed. The OCx open-drain output is asserted (active low) when an  
overtemperature shutdown or overcurrent occurs.  
Copyright © 2011–2012, Texas Instruments Incorporated  
13  
TPS2062-Q1, TPS2065-Q1  
SLVSA01B MAY 2011REVISED APRIL 2012  
www.ti.com  
UNDERVOLTAGE LOCKOUT (UVLO)  
An undervoltage lockout ensures that the power switch is in the off state at power up. Whenever the input  
voltage falls below approximately 2 V, the power switch is quickly turned off. This facilitates the design of hot-  
insertion systems where it is not possible to turn off the power switch before input power is removed. The UVLO  
also keeps the switch from being turned on until the power supply has reached at least 2 V, even if the switch is  
enabled. On reinsertion, the power switch is turned on, with a controlled rise time to reduce EMI and voltage  
overshoots.  
UNIVERSAL SERIAL BUS (USB) APPLICATIONS  
The universal serial bus (USB) interface is a 12-Mb/s, or 1.5-Mb/s, multiplexed serial bus designed for low-to-  
medium bandwidth PC peripherals (e.g., keyboards, printers, scanners, and mice). The four-wire USB interface is  
conceived for dynamic attach-detach (hot plug-unplug) of peripherals. Two lines are provided for differential data,  
and two lines are provided for 5-V power distribution.  
USB data is a 3.3-V level signal, but power is distributed at 5 V to allow for voltage drops in cases where power  
is distributed through more than one hub across long cables. Each function must provide its own regulated 3.3 V  
from the 5-V input or its own internal power supply.  
The USB specification defines the following five classes of devices, each differentiated by power-consumption  
requirements:  
Hosts/self-powered hubs (SPH)  
Bus-powered hubs (BPH)  
Low-power, bus-powered functions  
High-power, bus-powered functions  
Self-powered functions  
SPHs and BPHs distribute data and power to downstream functions. The TPS2065-Q1 and TPS2062-Q1 have  
higher current capability than required by one USB port; so, it can be used on the host side and supplies power  
to multiple downstream ports or functions.  
HOST/SELF-POWERED AND BUS-POWERED HUBS  
Hosts and SPHs have a local power supply that powers the embedded functions and the downstream ports (see  
Figure 25). This power supply must provide from 5.25 V to 4.75 V to the board side of the downstream  
connection under full-load and no-load conditions. Hosts and SPHs are required to have current-limit protection  
and must report overcurrent conditions to the USB controller. Typical SPHs are desktop PCs, monitors, printers,  
and stand-alone hubs.  
14  
Copyright © 2011–2012, Texas Instruments Incorporated  
TPS2062-Q1, TPS2065-Q1  
www.ti.com  
SLVSA01B MAY 2011REVISED APRIL 2012  
Downstream  
USB Ports  
D+  
D−  
V
BUS  
0.1 µF  
33 µF  
GND  
Power Supply  
3.3 V  
5 V  
D+  
D−  
TPS2062  
2
8
IN  
7
V
BUS  
OUT1  
0.1 µF  
0.1 µF  
33 µF  
GND  
OC1  
EN1  
OC2  
EN2  
3
5
USB  
Controller  
D+  
D−  
4
6
V
BUS  
OUT2  
0.1 µF  
33 µF  
GND  
GND  
1
D+  
D−  
V
BUS  
0.1 µF  
33 µF  
GND  
Figure 25. Typical Four-Port USB Host / Self-Powered Hub  
BPHs obtain all power from upstream ports and often contain an embedded function. The hubs are required to  
power up with less than one unit load. The BPH usually has one embedded function, and power is always  
available to the controller of the hub. If the embedded function and hub require more than 100 mA on power up,  
the power to the embedded function may need to be kept off until enumeration is completed. This can be  
accomplished by removing power or by shutting off the clock to the embedded function. Power switching the  
embedded function is not necessary if the aggregate power draw for the function and controller is less than one  
unit load. The total current drawn by the bus-powered device is the sum of the current to the controller, the  
embedded function, and the downstream ports, and it is limited to 500 mA from an upstream port.  
LOW-POWER BUS-POWERED AND HIGH-POWER BUS-POWERED FUNCTIONS  
Both low-power and high-power bus-powered functions obtain all power from upstream ports; low-power  
functions always draw less than 100 mA; high-power functions must draw less than 100 mA at power up and can  
draw up to 500 mA after enumeration. If the load of the function is more than the parallel combination of 44 Ω  
and 10 μF at power up, the device must implement inrush current limiting (see Figure 26). With TPS2065-Q1 and  
TPS2062-Q1, the internal functions could draw more than 500 mA, which fits the needs of some applications  
such as motor driving circuits.  
Copyright © 2011–2012, Texas Instruments Incorporated  
15  
TPS2062-Q1, TPS2065-Q1  
SLVSA01B MAY 2011REVISED APRIL 2012  
www.ti.com  
Power Supply  
3.3 V  
D+  
D−  
TPS2062  
2
8
IN  
V
BUS  
7
10 µF  
0.1 µF  
Internal  
OUT1  
GND  
Function  
0.1 µF  
10 µF  
OC1  
EN1  
OC2  
EN2  
3
5
USB  
Control  
6
4
OUT2  
GND  
Internal  
Function  
0.1 µF  
10 µF  
1
Figure 26. High-Power Bus-Powered Function  
USB POWER-DISTRIBUTION REQUIREMENTS  
USB can be implemented in several ways, and, regardless of the type of USB device being developed, several  
power-distribution features must be implemented.  
Hosts/SPHs must:  
Current-limit downstream ports  
Report overcurrent conditions on USB VBUS  
BPHs must:  
Enable/disable power to downstream ports  
Power up at <100 mA  
Limit inrush current (<44 and 10 μF)  
Functions must:  
Limit inrush currents  
Power up at <100 mA  
The feature set of the TPS2065-Q1 and TPS2062-Q1 allows them to meet each of these requirements. The  
integrated current-limiting and overcurrent reporting is required by hosts and self-powered hubs. The logic-level  
enable and controlled rise times meet the need of both input and output ports on bus-powered hubs, as well as  
the input ports for bus-powered functions (see Figure 27).  
16  
Copyright © 2011–2012, Texas Instruments Incorporated  
TPS2062-Q1, TPS2065-Q1  
www.ti.com  
SLVSA01B MAY 2011REVISED APRIL 2012  
TUSB2040  
Hub Controller  
SN75240  
BUSPWR  
Tie to TPS2041 EN Input  
Downstream  
Ports  
Upstream  
Port  
A
B
C
D
GANGED  
DP1  
DM1  
D +  
D −  
DP0  
DM0  
D +  
D −  
Ferrite Beads  
A
B
C
D
GND  
5 V  
GND  
SN75240  
DP2  
DM2  
TPS2041B  
OC EN  
IN OUT  
1 µF  
33 µF  
5-V Power  
Supply  
DP3  
DM3  
5 V  
D +  
D −  
A
B
C
D
Ferrite Beads  
TPS76333  
IN  
SN75240  
GND  
DP4  
DM4  
0.1 µF  
4.7 µF  
V
CC  
3.3 V  
GND  
5 V  
4.7 µF  
TPS2062  
PWRON1  
GND  
EN1  
OC1  
OUT1  
OUT2  
33 µF  
OVRCUR1  
PWRON2  
OVRCUR2  
48-MHz  
Crystal  
EN2  
OC2  
XTAL1  
XTAL2  
D +  
D −  
IN  
0.1 µF  
Ferrite Beads  
Tuning  
Circuit  
GND  
5 V  
OCSOFF  
GND  
33 µF  
D +  
D −  
Ferrite Beads  
GND  
5 V  
33 µF  
USB rev 1.1 requires 120 µF per hub.  
Figure 27. Hybrid Self / Bus-Powered Hub Implementation  
GENERIC HOT-PLUG APPLICATIONS  
In many applications it may be necessary to remove modules or pc boards while the main unit is still operating.  
These are considered hot-plug applications. Such implementations require the control of current surges seen by  
the main power supply and the card being inserted. The most effective way to control these surges is to limit and  
slowly ramp the current and voltage being applied to the card, similar to the way in which a power supply  
normally turns on. Due to the controlled rise times and fall times of the TPS2065-Q1 and TPS2062-Q1, these  
devices can be used to provide a softer start-up to devices being hot-plugged into a powered system. The UVLO  
feature of the TPS2065-Q1 and TPS2062-Q1 ensures that the switch is off after the card has been removed, and  
that the switch is off during the next insertion. The UVLO feature insures a soft start with a controlled rise time for  
every insertion of the card or module.  
Copyright © 2011–2012, Texas Instruments Incorporated  
17  
TPS2062-Q1, TPS2065-Q1  
SLVSA01B MAY 2011REVISED APRIL 2012  
www.ti.com  
PC Board  
TPS2062  
Power  
Supply  
Block of  
Circuitry  
OC1  
GND  
2.7 V to 5.5 V  
IN  
OUT1  
OUT2  
0.1 µF  
EN1  
EN2  
1000 µF  
Optimum  
OC2  
Block of  
Circuitry  
Overcurrent Response  
Figure 28. Typical Hot-Plug Implementation  
By placing the TPS2065-Q1 and TPS2062-Q1 are between the VCC input and the rest of the circuitry, the input  
power reaches these devices first after insertion. The typical rise time of the switch is approximately 1 ms,  
providing a slow voltage ramp at the output of the device. This implementation controls system surge currents  
and provides a hot-plugging mechanism for any device.  
DETAILED DESCRIPTION  
Power Switch  
The power switch is an N-channel MOSFET with a low on-state resistance. Configured as a high-side switch, the  
power switch prevents current flow from OUT to IN and IN to OUT when disabled. The power switch supplies a  
minimum current of 1 A.  
Charge Pump  
An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate  
of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires  
little supply current.  
Driver  
The driver controls the gate voltage of the power switch. To limit large current surges and reduce the associated  
electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and fall  
times of the output voltage.  
Enable (ENx)  
The logic enable disables the power switch and the bias for the charge pump, driver, and other circuitry to reduce  
the supply current. The supply current is reduced to less than 1 μA when a logic high is present on ENx. A logic  
zero input on ENx restores bias to the drive and control circuits and turns the switch on. The enable input is  
compatible with both TTL and CMOS logic levels.  
Overcurrent (OCx)  
The OCx open-drain output is asserted (active low) when an overcurrent or overtemperature condition is  
encountered. The output remains asserted until the overcurrent or overtemperature condition is removed. A 10-  
ms deglitch circuit prevents the OCx signal from oscillation or false triggering. If an overtemperature shutdown  
occurs, the OCx is asserted instantaneously.  
18  
Copyright © 2011–2012, Texas Instruments Incorporated  
TPS2062-Q1, TPS2065-Q1  
www.ti.com  
SLVSA01B MAY 2011REVISED APRIL 2012  
Current Sense  
A sense FET monitors the current supplied to the load. The sense FET measures current more efficiently than  
conventional resistance methods. When an overload or short circuit is encountered, the current-sense circuitry  
sends a control signal to the driver. The driver in turn reduces the gate voltage and drives the power FET into its  
saturation region, which switches the output into a constant-current mode and holds the current constant while  
varying the voltage on the load.  
Thermal Sense  
The TPS2065-Q1 and TPS2062-Q1 implement a thermal sensing to monitor the operating temperature of the  
power distribution switch. In an overcurrent or short-circuit condition the junction temperature rises. When the die  
temperature rises to approximately 140°C due to overcurrent conditions, the internal thermal sense circuitry turns  
off the switch, thus preventing the device from damage. Hysteresis is built into the thermal sense, and after the  
device has cooled approximately 10 degrees, the switch turns back on. The switch continues to cycle off and on  
until the fault is removed. The open-drain false reporting output (OCx) is asserted (active low) when an  
overtemperature shutdown or overcurrent occurs.  
Undervoltage Lockout  
A voltage sense circuit monitors the input voltage. When the input voltage is below approximately 2 V, a control  
signal turns off the power switch.  
SPACER  
REVISION HISTORY  
Changes from Revision A (November 2011) to Revision B  
Page  
Changed Pin Out drawing to include EN. ............................................................................................................................. 1  
Added or EN to Electrical Characteristics table. ................................................................................................................... 3  
Copyright © 2011–2012, Texas Instruments Incorporated  
19  
PACKAGE OPTION ADDENDUM  
www.ti.com  
14-Jun-2012  
PACKAGING INFORMATION  
Status (1)  
Eco Plan (2)  
MSL Peak Temp (3)  
Samples  
Orderable Device  
Package Type Package  
Drawing  
Pins  
Package Qty  
Lead/  
Ball Finish  
(Requires Login)  
TPS2062QDGNRQ1  
TPS2065QDGNRQ1  
ACTIVE  
ACTIVE  
MSOP-  
PowerPAD  
DGN  
DGN  
8
8
2500  
2500  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU Level-2-260C-1 YEAR  
MSOP-  
PowerPAD  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU Level-2-260C-1 YEAR  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF TPS2062-Q1, TPS2065-Q1 :  
Catalog: TPS2062, TPS2065  
NOTE: Qualified Version Definitions:  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
14-Jun-2012  
Catalog - TI's standard catalog product  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
14-Jun-2012  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
2500  
2500  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TPS2062QDGNRQ1  
TPS2065QDGNRQ1  
MSOP-  
Power  
PAD  
DGN  
DGN  
8
8
330.0  
330.0  
12.4  
12.4  
5.3  
5.3  
3.3  
3.3  
1.3  
1.3  
8.0  
8.0  
12.0  
12.0  
Q1  
Q1  
MSOP-  
Power  
PAD  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
14-Jun-2012  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TPS2062QDGNRQ1  
TPS2065QDGNRQ1  
MSOP-PowerPAD  
MSOP-PowerPAD  
DGN  
DGN  
8
8
2500  
2500  
370.0  
370.0  
355.0  
355.0  
55.0  
55.0  
Pack Materials-Page 2  
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TI

TPS2065CDBVT

Current-Limited, Power-Distribution Switches Deglitched Fault Reporting
TI

TPS2065CDBVT-2

高电平有效且具有反向阻断功能的 1A 负载、4.5-5.5V、86mΩ USB 电源开关 | DBV | 5 | -40 to 125
TI

TPS2065CDGN

Current-Limited, Power-Distribution Switches Deglitched Fault Reporting
TI

TPS2065CDGN-2

高电平有效且具有反向阻断功能的 1A 负载、4.5-5.5V、86mΩ USB 电源开关 | DGN | 8 | -40 to 125
TI

TPS2065CDGNR

Current-Limited, Power-Distribution Switches Deglitched Fault Reporting
TI

TPS2065CDGNR-2

Current-Limited, Power-Distribution Switches
TI

TPS2065D

CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES
TI

TPS2065DBV

CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES
TI