TPS22919-Q1 [TI]
符合 AEC Q100 标准、具有受控上升时间的单通道、5.5V、1.5A、90mΩ 自保护负载开关
| 型号： | TPS22919-Q1 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 符合 AEC Q100 标准、具有受控上升时间的单通道、5.5V、1.5A、90mΩ 自保护负载开关 开关 |
| 文件： | 总26页 (文件大小：1945K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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TPS22919-Q1
ZHCSKP7 –JANUARY 2020
TPS22919-Q1 5.5V、1.5A、90mΩ 自保护负载开关
1 特性
2 应用
1
•
•
符合汽车类 应用要求
符合 AEC-Q100 标准：
•
•
•
•
信息娱乐系统、仪表组和音响主机
汽车仪表组显示屏
ADAS 环视系统 ECU
车身控制模块和网关
–
器件温度等级 1：–40°C 至 125°C 的环境工作
温度范围
•
输入工作电压范围 (VIN)：
1.6V 至 5.5V
3 说明
•
•
最大持续电流 (IMAX)：1.5A
导通电阻 (RON)：
TPS22919-Q1 器件是一款压摆率可控的小型单通道负
载开关。此器件包含一个可在 1.6V 至 5.5V 输入电压
范围内运行的 N 沟道 MOSFET，并且支持 1.5A 的最
大持续电流。
–
–
–
5V VIN：89mΩ（典型值）
3.6V VIN：90mΩ（典型值）
1.8V VIN：105mΩ（典型值）
开关导通状态由数字输入控制，此输入可与低压控制信
号直接连接。首次加电时，此器件使用智能下拉电阻来
保持 ON 引脚不悬空，直到系统定序完成。故意将该
引脚驱动为高电平 (>VIH) 之后，便会断开智能下拉电
阻，以防止不必要的功率损耗。
•
•
输出短路保护 (ISC)：3A（典型值）
低功耗：
–
–
导通状态 (IQ)：8µA（典型值）
关断状态 (ISD)：2nA（典型值）
•
•
智能 ON 引脚下拉电阻 (RPD)：
TPS22919-Q1 负载开关也是自保护的，这意味着它可
以保护自己免受器件输出上短路事件的影响。它还具有
热关断功能，可防止因过热而造成任何损坏。
–
–
ON ≥ VIH (ION)：100nA（最大值）
ON ≤ VIL (RPD)：530kΩ（典型值）
可限制浪涌电流的慢速导通时序 (tON)：
–
–
–
5.0V 导通时间 (tON)：
3.2mV/μs 下为 1.95ms
TPS22919-Q1 采用标准 SC-70 封装，工作结温范围
为 –40°C 至 125°C。
3.6V 导通时间 (tON)：
2.7mV/μs 下为 1.75ms
器件信息(1)
器件型号
封装
SC-70 (6)
封装尺寸（标称值）
1.8V 导通时间 (tON)：
1.8mV/μs 下为 1.5ms
TPS22919-Q1
2.1mm × 2.0mm
•
可调节输出放电和下降时间：
内部 QOD 电阻 = 24Ω（典型值）
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附
录。
–
简化原理图
1
本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。 有关适用的官方英文版本的最新信息，请访问 www.ti.com，其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SLVSFG2
TPS22919-Q1
ZHCSKP7 –JANUARY 2020
www.ti.com.cn
目录
8.2 Functional Block Diagram ....................................... 12
8.3 Feature Description................................................. 13
8.4 Device Functional Modes........................................ 14
Application and Implementation ........................ 15
9.1 Application Information............................................ 15
9.2 Typical Application ................................................. 15
1
2
3
4
5
6
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 4
6.6 Switching Characteristics.......................................... 5
6.7 Typical Characteristics ............................................. 7
Parameter Measurement Information ................ 11
7.1 Test Circuit and Timing Waveforms Diagrams ....... 11
Detailed Description ............................................ 12
8.1 Overview ................................................................. 12
9
10 Power Supply Recommendations ..................... 17
11 Layout................................................................... 18
11.1 Layout Guidelines ................................................. 18
11.2 Layout Example .................................................... 18
11.3 Thermal Considerations........................................ 18
12 器件和文档支持 ..................................................... 19
12.1 商标....................................................................... 19
12.2 静电放电警告......................................................... 19
12.3 Glossary................................................................ 19
13 机械、封装和可订购信息....................................... 19
7
8
4 修订历史记录
日期
修订版本
说明
2020 年 1 月
*
初始发行版。
2
Copyright © 2020, Texas Instruments Incorporated
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5 Pin Configuration and Functions
DCK Package
6-Pin SC-70
Top View
Pin Functions
PIN
I/O
DESCRIPTION
NO.
1
NAME
IN
I
Switch input.
Device ground.
2
GND
ON
—
I
3
Active high switch control input. Do not leave floating.
No connect pin, leave floating.
4
NC
—
Quick Output Discharge pin. This functionality can be enabled in one of three ways.
•
•
•
Placing an external resistor between VOUT and QOD
Tying QOD directly to VOUT and using the internal resistor value (RPD
Disabling QOD by leaving pin floating
)
5
6
QOD
O
O
See the Fall Time (tFALL) and Quick Output Discharge (QOD) section for more
information.
VOUT
Switch output.
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6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
–0.3
MAX
6
UNIT
V
VIN
Maximum Input Voltage Range
Maximum Output Voltage Range
Maximum ON Pin Voltage Range
Maximum QOD Pin Voltage Range
Maximum Continuous Current
VOUT
VON
VQOD
IMAX
IPLS
6
V
6
V
6
V
1.5
2.5
A
Maximum Pulsed Current (2 ms, 2% Duty Cycle)
Junction temperature
A
TJ
Internally Limited
–65
°C
°C
°C
TSTG
TLEAD
Storage temperature
150
300
Maximum Lead Temperature (10 s soldering time)
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per AEC Q100-
002(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per AEC Q100-
011
±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
1.6
0
TYP
MAX
5.5
UNIT
V
VIN
VOUT
VIH
VIL
Input Voltage Range
Output Voltage Range
ON Pin High Voltage Range
ON Pin Low Voltage Range
Ambient Temperature
5.5
V
1
5.5
V
0
0.35
125
V
TA
–40
°C
6.4 Thermal Information
TPS22919-Q1
DCK (SC-70)
PINS
THERMAL METRIC(1)
UNIT
RθJA
RθJC(top)
RθJB
ΨJT
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
214.2
°C/W
°C/W
°C/W
°C/W
°C/W
147.6
75.2
Junction-to-top characterization parameter
Junction-to-board characterization parameter
58.5
ΨJB
75.0
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
Typical values at VIN = 3.6V unless otherwise specified
PARAMETER
Input Supply (VIN)
TEST CONDITIONS
TJ
MIN TYP MAX UNIT
4
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Electrical Characteristics (continued)
Typical values at VIN = 3.6V unless otherwise specified
PARAMETER
TEST CONDITIONS
TJ
MIN TYP MAX UNIT
25°C
8
15 µA
20 µA
20 nA
800 nA
IQ, VIN
VIN Quiescent Current
VIN Shutdown Current
VON ≥ VIH, VOUT = Open
VON ≤ VIL, VOUT = GND
-40°C to 125°C
25°C
2
ISD, VIN
-40°C to 125°C
ON-Resistance (RON)
25°C
89 125 mΩ
150 mΩ
-40°C to 85°C
-40°C to 105°C
-40°C to 125°C
25°C
VIN = 5 V
175 mΩ
200 mΩ
90 150 mΩ
200 mΩ
-40°C to 85°C
-40°C to 105°C
-40°C to 125°C
25°C
RON
ON-State Resistance
IOUT = -200 mA
VIN = 3.6 V
225 mΩ
250 mΩ
105 300 mΩ
330 mΩ
-40°C to 85°C
-40°C to 105°C
-40°C to 125°C
VIN = 1.8 V
340 mΩ
350 mΩ
Output Short Protection (ISC)
V
OUT ≤ VIN - 1.5 V
OUT ≤ VSC
-40°C to 125°C
-40°C to 125°C
-40°C to 125°C
3
A
ISC
Short Circuit Current Limit
V
30 500 900 mA
VSC
tSC
Output Short Detection Threshold
Output Short Reponse Time
VIN - VOUT
0.3 0.36 0.46
V
VIN = 1.6V to 5.5V, 10mΩ short
applied
-40°C to 125°C
2
µs
Rising
Falling
180
145
℃
℃
TSD
Thermal Shutdown
Enable Pin (ON)
ION
ON Pin Leakage
Smart Pull Down Resistance
VON ≥ VIH
VON ≤ VIL
-40°C to 125°C
-40°C to 125°C
100 nA
RPD, ON
530
24
kΩ
Quick-output Discharge (QOD)
QOD Pin Internal Discharge
Resistance
RPD, QOD
VON ≤ VIL
-40°C to 125°C
Ω
6.6 Switching Characteristics
Unless otherwise noted, the typical characteristics in the following table apply to an input voltage of 3.6V, an ambient
temperature of 25°C, and a load of CL = 0.1 µF, RL = 100 Ω
PARAMETER
TEST CONDITIONS
MIN
TYP
1950
1750
1500
1280
1100
750
3.2
MAX
UNIT
µs
VIN = 5.0 V
VIN = 3.6 V
VIN = 1.8 V
VIN = 5.0 V
VIN = 3.6 V
VIN = 1.8 V
VIN = 5.0 V
VIN = 3.6 V
VIN = 1.8 V
VIN = 1.8 V to 5.0V
tON
Turn ON Time
µs
µs
µs
tR
Output Rise Time
µs
µs
mV/µs
mV/µs
mV/µs
µs
Turn ON Slew
Rate
SRON
2.7
1.8
tOFF
Turn OFF Time
RL = 100Ω, CL = 0.1uF
6
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Switching Characteristics (continued)
Unless otherwise noted, the typical characteristics in the following table apply to an input voltage of 3.6V, an ambient
temperature of 25°C, and a load of CL = 0.1 µF, RL = 100 Ω
PARAMETER
TEST CONDITIONS
CL = 0.1uF, RQOD = Short
MIN
TYP
10
MAX
UNIT
µs
RL = 100Ω
CL = 10uF, RQOD = Short
CL = 10uF, RQOD = 100 Ω
CL = 100uF, RQOD = Short
0.4
3.5
4
ms
Output Fall Time
tFALL
(1)
(2)
RL = Open
ms
ms
(1) Output may not discharge completely if QOD is not connected to VOUT
(2) See the Timing Application section for information on how RL and CL affect Fall Time.
6
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6.7 Typical Characteristics
200
12
11.2
10.4
9.6
8.8
8
-40èC
180
25èC
105èC
125èC
160
140
120
100
80
60
40
20
0
7.2
6.4
5.6
4.8
4
-40èC
25èC
105èC
125èC
1.8
2.2
2.6
3
Input Voltage (V)
3.4
3.8
4.2
4.6
5
1.8
2.2
2.6
3
Input Voltage (V)
3.4
3.8
4.2
4.6
5
D001
D002
VON ≤ VIL
VON ≥ VIH
图 1. Shutdown Current vs Input Voltage
图 2. Quiescent Current vs Input Voltage
160
60
54
48
42
36
30
24
18
12
6
-40èC
25èC
105èC
125èC
150
140
130
120
110
100
90
80
VIN = 1.8V
VIN = 3.6V
VIN = 5.0V
70
60
0
-40 -25 -10
5
20 35 50 65 80 95 110 125
Junction Temperature (èC)
1.8
2.2
2.6
3
3.4
3.8
Input Voltage (V)
4.2
4.6
5
D003
D004
ILOAD = –200 mA
VON ≤ VIL
图 3. On-Resistance vs Junction Temperature
图 4. QOD Resistance vs Input Voltage
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
560
550
540
530
520
510
500
VIL
VIH
VIN = 1.8V
VIN = 3.6V
VIN = 5.0V
-40 -25 -10
5
20 35 50 65 80 95 110 125
Junction Temperature (èC)
-40 -25 -10
5
20 35 50 65 80 95 110 125
Junction Temperature (°C)
D006
VON ≤ VIL
图 6. ON Pull Down Resistance vs Junction Temperature
D005
VON ≤ VIL
图 5. VIH/VIL vs Junction Temperature
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Typical Characteristics (接下页)
3000
2750
2500
2250
2000
1750
1500
1250
1000
750
1750
1500
1250
1000
750
500
250
0
-40èC
25èC
105èC
125èC
-40èC
25èC
105èC
125èC
500
250
0
1.8
2.2
2.6
3
Input Voltage (V)
3.4
3.8
4.2
4.6
5
1.8
2.2
2.6
3
Input Voltage (V)
3.4
3.8
4.2
4.6
5
D007
D008
CL = 0.1 μF
RL = 100 Ω
CL = 0.1 μF
RL = 100 Ω
图 7. Turn ON Time vs Input Voltage
图 8. Rise Time vs Input Voltage
4.5
4
2100
2000
1900
1800
1700
1600
1500
3.5
3
2.5
2
-40èC
25èC
105èC
125èC
0.1mF
1.5
1
1mF
10mF
1.8
2.2
2.6
3
Input Voltage (V)
3.4
3.8
4.2
4.6
5
1.8
2.2
2.6
3
Input Voltage (V)
3.4
3.8
4.2
4.6
5
D009
D010
CL = 0.1 μF
RL = 100 Ω
RL = 100 Ω
TJ = 25°C
图 9. Output Slew Rate vs Input Voltage
图 10. Turn ON Time vs Input Voltage Across Load
Capacitance
1400
1200
1000
800
3.3
3
2.7
2.4
2.1
1.8
0.1mF
0.1mF
1mF
10mF
1mF
10mF
600
1.8
2.2
2.6
3
Input Voltage (V)
3.4
3.8
4.2
4.6
5
1.8
2.2
2.6
3
Input Voltage (V)
3.4
3.8
4.2
4.6
5
D011
D012
RL = 100 Ω
TJ = 25°C
RL = 100 Ω
TJ = 25°C
图 11. Rise Time vs Input Voltage Across Load Capacitance
图 12. Slew Rate vs Input Voltage Across Load Capacitance
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Typical Characteristics (接下页)
2200
1600
1400
1200
1000
800
2000
1800
1600
1400
1200
RL = 10W
RL = 100W
RL = Open
RL = 10W
RL = 100W
RL = Open
600
1.8
2.2
2.6
3
Input Voltage (V)
3.4
3.8
4.2
4.6
5
1.8
2.2
2.6
3
Input Voltage (V)
3.4
3.8
4.2
4.6
5
D013
D014
CL = 0.1 μF
TJ = 25°C
CL = 0.1 μF
TJ = 25°C
图 13. Turn ON Time vs Input Voltage Across Load
图 14. Rise Time vs Input Voltage Across Load Resistance
Resistance
4
3.5
3
9
8
7
6
5
4
2.5
2
3
-40èC
RL = 10W
RL = 100W
RL = Open
25èC
1.5
2
105èC
125èC
1
1
1.8
2.2
2.6
3
Input Voltage (V)
3.4
3.8
4.2
4.6
5
1.8
2.2
2.6
3
Input Voltage (V)
3.4
3.8
4.2
4.6
5
D015
D016
CL = 0.1 μF
TJ = 25°C
CL = 0.1 μF
RL = 100 Ω
图 15. Output Slew Rate vs Input Voltage Across Load
Resistance
图 16. Turn OFF Time vs Input Voltage
15
14
13
12
11
10
9
8
-40èC
25èC
7
105èC
125èC
6
5
1.8
2.2
2.6
3
3.4
3.8
Input Voltage (V)
4.2
4.6
5
D018
CL = 0.1 μF
RL = 100 Ω
RPD,QOD = Short
图 17. Fall Time vs Input Voltage
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Typical Characteristics (接下页)
CL = 0.1 μF
RL = 100 Ω
CL = 0.1 μF
RL = 100 Ω
图 18. Rise Time with VIN = 1.8 V
图 19. Rise Time with VIN = 3.3 V
CL = 0.1 μF
RL = 100 Ω
CL = Open
RL = 100 Ω
图 20. Rise Time with VIN = 5 V
图 21. Turn Off with a Small Load Capacitance
CL = 10 μF
RL = 100 Ω
VIN = 3.3 V
图 22. Turn Off with a Large Load Capacitance
图 23. Turn On Into an Output Short
10
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Typical Characteristics (接下页)
VIN = 3.3 V
VIN = 3.3 V
图 24. Hot Short Event when ON
图 25. Hot Short Event when ON and Recovery
7 Parameter Measurement Information
7.1 Test Circuit and Timing Waveforms Diagrams
(1) Rise and fall times of the control signal are 100 ns
(2) Turn-off times and fall times are dependent on the time constant at the load. For the TPS22919-Q1 devices, the
internal pull-down resistance QOD is enabled when the switch is disabled. The time constant is (RQOD + RPD,QOD ||
RL) × CL.
图 26. Test Circuit
图 27. Timing Waveforms
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8 Detailed Description
8.1 Overview
The TPS22919-Q1 device is a 5.5-V, 1.5-A load switch in a 6-pin SOT-23 package. To reduce voltage drop for
low voltage and high current rails, the device implements a low resistance N-channel MOSFET which reduces
the drop out voltage across the device.
The TPS22919-Q1 device has a slow slew rate which helps reduce or eliminate power supply droop because of
large inrush currents. Furthermore, the device features a QOD pin, which allows the configuration of the
discharge rate of VOUT once the switch is disabled. During shutdown, the device has very low leakage currents,
thereby reducing unnecessary leakages for downstream modules during standby. Integrated control logic, driver,
charge pump, and output discharge FET eliminates the need for any external components which reduces
solution size and bill of materials (BOM) count.
The TPS22919-Q1 load switch is also self-protected, meaning that it will protect itself from short circuit events on
the output of the device. It also has thermal shutdown to prevent any damage from overheating.
8.2 Functional Block Diagram
Short
Circuit
Protection
IN
OUT
Control Logic
Driver
ON
Smart
Pull
Down
QOD
GND
12
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8.3 Feature Description
8.3.1 On and Off Control
The ON pin controls the state of the switch. The ON pin is compatible with standard GPIO logic threshold so it
can be used in a wide variety of applications. When power is first applied to VIN, a Smart Pull Down is used to
keep the ON pin from floating until the system sequencing is complete. Once the ON pin is deliberately driven
high (≥VIH), the Smart Pull Down is disconnected to prevent unnecessary power loss. See 表 1 when the ON Pin
Smart Pull Down is active.
表 1. Smart-ON Pull Down
VON
≤ VIL
≥ VIH
Pull Down
Connected
Disconnected
8.3.2 Output Short Circuit Protection (ISC
)
The device will limit current to the output in case of output shorts. When a short occurs, the large VIN to VOUT
voltage drop causes the switch to limit the output current (ISC) within (tSC). When the output is below the hard
short threshold (VSC), a lower limit is used to minimize the power dissipation while the fault is present. The device
will continue to limit the current until it reaches its thermal shutdown temperature. At this time, the device will turn
off until its temperature has lowered by the thermal hysteresis (35°C typical) before turning on again.
图 28. Output Short Circuit Current Limit
图 29. Output Short Circuit Response
8.3.3 Fall Time (tFALL) and Quick Output Discharge (QOD)
The TPS22919-Q1 device includes a QOD pin that can be configured in one of three ways:
•
QOD pin shorted to VOUT pin. Using this method, the discharge rate after the switch becomes disabled is
controlled with the value of the internal resistance QOD (RPD,QOD).
•
QOD pin connected to VOUT pin using an external resistor RQOD. After the switch becomes disabled, the
discharge rate is controlled by the value of the total discharge resistance. To adjust the total discharge
resistance, 公式 1 can be used:
RDIS = RPD,QOD + RQOD
Where:
•
RDIS = Total output discharge resistance (Ω)
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TPS22919-Q1
ZHCSKP7 –JANUARY 2020
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•
•
RPD,QOD = Internal pulldown resistance (Ω)
RQOD = External resistance placed between the VOUT and QOD pins (Ω)
(1)
•
QOD pin is unused and left floating. Using this method, there will be no quick output discharge functionality,
and the output will remain floating after the switch is disabled.
The fall times of the device depend on many factors including the total discharge resistance (RDIS) and the output
capacitance (CL). To calculate the approximate fall time of VOUT use 公式 2.
tFALL = 2.2 × (RDIS || RL) × CL
Where:
•
•
•
•
tFALL = Output Fall Time from 90% to 10% (μs)
RDIS = Total QOD + RQOD Resistance (Ω)
RL = Output Load Resistance (Ω)
CL = Output Load Capacitance (μF)
(2)
8.3.3.1 QOD When System Power is Removed
The adjustable QOD can be used to control the power down sequencing of a system even when the system
power supply is removed. When the power is removed, the input capacitor discharges at VIN. Past a certain VIN
level, the strength of the RPD will be reduced. If there is still remaining charge on the output capacitor, this will
result in longer fall times. For further information regarding this condition, see the Setting Fall Time for Shutdown
Power Sequencing section.
8.4 Device Functional Modes
表 2 describes the connection of the VOUT pin depending on the state of the ON pin as well as the various QOD
pin configurations.
表 2. VOUT Connection
ON
L
QOD CONFIGURATION
QOD pin connected to VOUT with RQOD
QOD pin tied to VOUT directly
QOD pin left open
TPS22919-Q1 VOUT
GND (RPD, QOD + RQOD
)
L
GND (RPD, QOD
Floating
)
L
H
N/A
VIN
14
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TPS22919-Q1
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ZHCSKP7 –JANUARY 2020
9 Application and Implementation
注
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
This section highlights some of the design considerations when implementing this device in various applications.
9.2 Typical Application
This typical application demonstrates how the TPS22919-Q1 devices can be used to power downstream
modules.
图 30. Typical Application Schematic
9.2.1 Design Requirements
For this design example, use the values listed in 表 3 as the design parameters:
表 3. Design Parameters
DESIGN PARAMETER
Input Voltage (VIN
EXAMPLE VALUE
3.6 V
)
Load Current / Resistance (RL)
Load Capacitance (CL)
1 kΩ
47 µF
Minimum Fall Time (tF)
40 ms
Maximum Inrush Current (IRUSH
)
150 mA
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TPS22919-Q1
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9.2.2 Detailed Design Procedure
9.2.2.1 Limiting Inrush Current
Use 公式 3 to find the maximum slew rate value to limit inrush current for a given capacitance:
(Slew Rate) = IRUSH ÷ CL
where
•
•
•
IINRUSH = maximum acceptable inrush current (mA)
CL = capacitance on VOUT (μF)
Slew Rate = Output Slew Rate during turn on (mV/μs)
(3)
Based on 公式 3, the required slew rate to limit the inrush current to 150 mA is 3.2 mV/μs. The TPS22919-Q1
has a slew rate of 2.3 mV/μs, so the inrush current will be below 150 mA.
9.2.2.2 Setting Fall Time for Shutdown Power Sequencing
Microcontrollers and processors often have a specific shutdown sequence in which power must be removed.
Using the adjustable Quick Output Discharge function of the TPS22919-Q1 device, adding a load switch to each
power rail can be used to manage the power down sequencing. To determine the QOD values for each load
switch, first confirm the power down order of the device you wish to power sequence. Be sure to check if there
are voltage or timing margins that must be maintained during power down.
Once the required fall time is determined, the maximum external discharge resistance (RDIS) value can be found
using 公式 2:
tFALL = 2.2 × (RDIS || RL) × CL
(4)
(5)
RDIS = 630 Ω
公式 1 can then be used to calculate the RQOD resistance needed to achieve a particular discharge value:
RDIS = QOD + RQOD
(6)
(7)
RQOD = 600 Ω
To ensure a fall time greater than, choose an RQOD value greater than 600 Ω.
9.2.2.3 Application Curves
A.
CL = 47μF
图 31. Fall Time (RQOD = 1 kΩ)
16
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TPS22919-Q1
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ZHCSKP7 –JANUARY 2020
10 Power Supply Recommendations
The device is designed to operate with a VIN range of 1.6 V to 5.5 V. The VIN power supply must be well
regulated and placed as close to the device terminal as possible. The power supply must be able to withstand all
transient load current steps. In most situations, using an input capacitance (CIN) of 1 μF is sufficient to prevent
the supply voltage from dipping when the switch is turned on. In cases where the power supply is slow to
respond to a large transient current or large load current step, additional bulk capacitance may be required on
the input.
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17
TPS22919-Q1
ZHCSKP7 –JANUARY 2020
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11 Layout
11.1 Layout Guidelines
For best performance, all traces must be as short as possible. To be most effective, the input and output
capacitors must be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects.
11.2 Layout Example
图 32. Recommended Board Layout
11.3 Thermal Considerations
The maximum IC junction temperature should be restricted to 125°C under normal operating conditions. To
calculate the maximum allowable dissipation, PD(max) for a given output current and ambient temperature, use 公
式 8:
TJ(MAX) - TA
PD(MAX)
=
qJA
where
•
•
•
•
PD(MAX) = maximum allowable power dissipation
TJ(MAX) = maximum allowable junction temperature (125°C for the TPS22919-Q1 devices)
TA = ambient temperature of the device
θJA = junction to air thermal impedance. Refer to the Thermal Parameters table. This parameter is highly
dependent upon board layout.
(8)
18
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TPS22919-Q1
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ZHCSKP7 –JANUARY 2020
12 器件和文档支持
12.1 商标
All trademarks are the property of their respective owners.
12.2 静电放电警告
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可
能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可
能会导致器件与其发布的规格不相符。
12.3 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更，恕不另行通知，且
不会对此文档进行修订。如需获取此数据表的浏览器版本，请查阅左侧的导航栏。
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19
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TI 均以“原样”提供技术性及可靠性数据（包括数据表）、设计资源（包括参考设计）、应用或其他设计建议、网络工具、安全信息和其他资
源，不保证其中不含任何瑕疵，且不做任何明示或暗示的担保，包括但不限于对适销性、适合某特定用途或不侵犯任何第三方知识产权的暗示
担保。
所述资源可供专业开发人员应用TI 产品进行设计使用。您将对以下行为独自承担全部责任：(1) 针对您的应用选择合适的TI 产品；(2) 设计、
验证并测试您的应用；(3) 确保您的应用满足相应标准以及任何其他安全、安保或其他要求。所述资源如有变更，恕不另行通知。TI 对您使用
所述资源的授权仅限于开发资源所涉及TI 产品的相关应用。除此之外不得复制或展示所述资源，也不提供其它TI或任何第三方的知识产权授权
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TI 所提供产品均受TI 的销售条款 (http://www.ti.com.cn/zh-cn/legal/termsofsale.html) 以及ti.com.cn上或随附TI产品提供的其他可适用条款的约
束。TI提供所述资源并不扩展或以其他方式更改TI 针对TI 产品所发布的可适用的担保范围或担保免责声明。IMPORTANT NOTICE
邮寄地址：上海市浦东新区世纪大道 1568 号中建大厦 32 楼，邮政编码：200122
Copyright © 2020 德州仪器半导体技术（上海）有限公司
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS22919QDCKRQ1
ACTIVE
SC70
DCK
6
3000 RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
1H2
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
27-Aug-2020
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TPS22919QDCKRQ1
SC70
DCK
6
3000
178.0
9.0
2.4
2.5
1.2
4.0
8.0
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
27-Aug-2020
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SC70 DCK
SPQ
Length (mm) Width (mm) Height (mm)
180.0 180.0 18.0
TPS22919QDCKRQ1
6
3000
Pack Materials-Page 2
重要声明和免责声明
TI 均以“原样”提供技术性及可靠性数据（包括数据表）、设计资源（包括参考设计）、应用或其他设计建议、网络工具、安全信息和其他资
源，不保证其中不含任何瑕疵，且不做任何明示或暗示的担保，包括但不限于对适销性、适合某特定用途或不侵犯任何第三方知识产权的暗示
担保。
所述资源可供专业开发人员应用TI 产品进行设计使用。您将对以下行为独自承担全部责任：(1) 针对您的应用选择合适的TI 产品；(2) 设计、
验证并测试您的应用；(3) 确保您的应用满足相应标准以及任何其他安全、安保或其他要求。所述资源如有变更，恕不另行通知。TI 对您使用
所述资源的授权仅限于开发资源所涉及TI 产品的相关应用。除此之外不得复制或展示所述资源，也不提供其它TI或任何第三方的知识产权授权
许可。如因使用所述资源而产生任何索赔、赔偿、成本、损失及债务等，TI对此概不负责，并且您须赔偿由此对TI 及其代表造成的损害。
TI 所提供产品均受TI 的销售条款 (http://www.ti.com.cn/zh-cn/legal/termsofsale.html) 以及ti.com.cn上或随附TI产品提供的其他可适用条款的约
束。TI提供所述资源并不扩展或以其他方式更改TI 针对TI 产品所发布的可适用的担保范围或担保免责声明。IMPORTANT NOTICE
邮寄地址：上海市浦东新区世纪大道 1568 号中建大厦 32 楼，邮政编码：200122
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