TPS23731RMTR [TI]

TPS23731 IEEE 802.3bt Type 3 Class 1-4 PoE PD with No-Opto Flyback DC-DC Controller;
TPS23731RMTR
型号: TPS23731RMTR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

TPS23731 IEEE 802.3bt Type 3 Class 1-4 PoE PD with No-Opto Flyback DC-DC Controller

光电二极管
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TPS23731
SLVSER7 – OCTOBER 2020  
TPS23731 IEEE 802.3bt Type 3 Class 1-4 PoE PD with No-Opto Flyback DC-DC  
Controller  
1 Features  
3 Description  
Complete IEEE 802.3bt Type 3 (Class 1-4) and  
802.3at PoE PD Solution  
The TPS23731 device combines a Power over  
Ethernet (PoE) powered device (PD) interface, and a  
current-mode DC-DC controller optimized for flyback  
switching regulator designs where the use of primary-  
side regulation (PSR) is supported. The PoE interface  
supports the IEEE 802.3bt and IEEE 802.3at  
standards for applications needing up to 25.5 W or  
less at PD input.  
– EA Gen 2 logo-ready (PoE 2 PD Controller)  
– Robust 100-V, 0.3-Ω (typ) Hotswap MOSFET  
– Supports power levels for up to 30-W operation  
Integrated PWM controller for flyback configuration  
– Flyback control with primary-side regulation  
Supports CCM operation  
Programmable spread spectrum frequency dithering  
(SSFD) is provided to minimize the size and cost of  
EMI filter. Advanced Startup with adjustable soft-start  
helps to use minimal bias capacitor while simplifying  
converter startup and hiccup design, also ensuring  
that IEEE 802.3bt/at startup requirements are met.  
±1.5% (typ, 5-V output) load regulation  
(0-100% load range) — with Sync FET  
±3% (typ, 12-V output) load regulation  
(5-100% load range) — diode rectified  
– Also supports secondary-side regulation  
– Soft-start control with advanced startup and  
hiccup mode overload protection  
The soft-stop feature minimizes stress on switching  
sync FET(s), allowing FET BOM cost reduction.  
– Soft-stop shutdown  
– Adjustable frequency with synchronization  
– Programmable frequency dithering for EMI  
Automatic Maintain Power Signature (MPS)  
– Auto-adjust to PSE type and load current with  
auto-stretch  
The PSR feature of the DC-DC controller uses  
feedback from an auxiliary winding for control of the  
output voltage, eliminating the need for external shunt  
regulator and optocoupler. It is optimized for  
continuous conduction mode (CCM), and can work  
with secondary side synchronous rectification,  
resulting in optimum efficiency, regulation accuracy  
and step load response over multiple outputs.  
Primary adapter priority input  
–40°C to 125°C junction temperature range  
2 Applications  
The DC-DC controller features slope compensation  
and blanking. Typical switching frequency is 250 kHz.  
Video and VoIP Telephones  
Access Points  
Security Cameras  
The automatic MPS enables applications with low  
power modes or multiple power feeds. It automatically  
adjusts its pulsed current amplitude and duration  
according to PSE Type and system conditions, to  
maintain power while minimizing consumption.  
Redundant Power Feeds or Power Sharing  
Device Information (1)  
PART NUMBER  
PACKAGE  
BODY SIZE (NOM)  
TPS23731  
VSON (45)  
7.00 mm × 5.00 mm  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
T1  
TPS23731  
VCC  
+
RCL CCL  
VDD  
DEN  
CBULK  
DCL  
VOUT2  
COUT2  
RDEN  
APDO  
T2P  
GATE  
CS  
0.1 F  
58V  
CLS  
RCS  
VOUT1  
VCC  
COUT  
COMP  
DCC  
VSS  
APD  
CCOMP  
RCOMP  
I_in  
R1  
CVCC  
FB  
CCC2  
LINEUV  
FRS  
RUV2  
DA  
CP  
R2  
SST  
CSST  
RDTR  
EA_DIS  
VB  
DTHR  
RTN GND I_STP PSRS  
CVB  
RAPD2  
CDTR  
RFRS  
48V  
Adapter  
RI_STP  
Simplified Application  
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
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SLVSER7 – OCTOBER 2020  
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Table of Contents  
1 Features............................................................................1  
2 Applications.....................................................................1  
3 Description.......................................................................1  
4 Revision History.............................................................. 2  
5 Device Comparison Table...............................................3  
6 Pin Configuration and Functions...................................3  
7 Specifications.................................................................. 6  
7.1 Absolute Maximum Ratings ....................................... 6  
7.2 ESD Ratings .............................................................. 6  
7.3 Recommended Operating Conditions ........................7  
7.4 Thermal Information ...................................................7  
7.5 Electrical Characteristics: DC-DC Controller  
Section ......................................................................... 7  
7.6 Electrical Characteristics PoE ..................................10  
7.7 Typical Characteristics..............................................13  
8 Detailed Description......................................................17  
8.1 Overview...................................................................17  
8.2 Functional Block Diagram.........................................18  
8.3 Feature Description...................................................19  
8.4 Device Functional Modes..........................................27  
9 Application and Implementation..................................41  
9.1 Application Information............................................. 41  
9.2 Typical Application.................................................... 41  
10 Power Supply Recommendations..............................44  
11 Layout...........................................................................45  
11.1 Layout Guidelines................................................... 45  
11.2 Layout Example...................................................... 45  
11.3 EMI Containment.................................................... 45  
11.4 Thermal Considerations and OTSD........................45  
11.5 ESD.........................................................................45  
12 Device and Documentation Support..........................46  
12.1 Documentation Support.......................................... 46  
12.2 Support Resources................................................. 46  
12.3 Trademarks.............................................................46  
12.4 Electrostatic Discharge Caution..............................46  
12.5 Glossary..................................................................46  
13 Mechanical, Packaging, and Orderable  
Information.................................................................... 46  
4 Revision History  
DATE  
REVISION  
NOTES  
October 2020  
*
Initial release.  
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5 Device Comparison Table  
KEY FEATURES  
Class Range  
ACF Support  
SSFD  
TPS23730  
1-6  
TPS23731  
1-4  
TPS23734  
1-4  
Yes  
No  
Yes  
Yes  
Yes  
Yes  
Soft-stop  
Yes  
Yes  
Yes  
Advanced Startup  
PSR (Flyback)  
Auto MPS  
Yes  
Yes  
Yes  
Yes  
Yes  
Yes  
Yes  
Yes  
Yes  
PPD  
Yes  
No  
No  
APD  
Yes  
Yes  
Yes  
PoE allocated power and AUX power  
indicator(s)  
TPH/TPL (parallel) or TPL  
(serial)  
T2P, APDO  
T2P, APDO  
6 Pin Configuration and Functions  
CS  
1
COMP  
35  
34  
33  
32  
31  
30  
AGND  
DTHR  
2
3
4
5
6
FB  
SST  
FRS  
APD  
NC  
I_STP  
NC  
PAD_G  
TEST  
7
8
9
RTN  
RTN  
RTN  
NC  
29  
28  
27  
26  
25  
24  
23  
VSS  
VSS  
NC  
10  
11  
12  
13  
NC  
PAD_S  
NC  
EMPS  
DEN  
VDD  
NC  
APDO  
Figure 6-1. Package Pinout  
Table 6-1. Pin Functions  
PIN  
I/O  
DESCRIPTION  
NO.  
NAME  
DC-DC controller current sense input. Connect directly to the external power current sense  
resistor.  
1
CS  
I/O  
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Table 6-1. Pin Functions (continued)  
PIN  
I/O  
DESCRIPTION  
NO.  
NAME  
2
AGND  
-
AGND is the DC-DC converter analog return. Tie to RTN and GND on the circuit board.  
Used for spread spectrum frequency dithering. Connect a capacitor (determines the modulating  
frequency) from DTHR to RTN and a resistor (determines the amount of dithering) from DTHR to  
FRS. If dithering is not used, short DTHR to VB pin.  
3
4
DTHR  
FRS  
O
I
This pin controls the switching frequency of the DC-DC converter. Tie a resistor from this pin to  
RTN to set the frequency.  
Primary auxiliary power detect input. Raise 1.5 V above RTN to disable pass MOSFET, also  
turning class off. If not used, connect APD to RTN.  
5
APD  
RTN  
I
-
I
7, 8, 9  
11  
RTN is the output of the PoE hotswap and the reference ground for the DC-DC controller.  
Automatic MPS enable input, referenced to RTN, internally pulled-up to 5-V internal rail. Tie to  
RTN to disable automatic MPS.  
EMPS  
Active low output referenced to RTN, indicates that an auxiliary power adapter is detected via the  
APD input.  
13  
14  
APDO  
T2P  
O
O
Active low output that indicates a PSE has performed the IEEE 802.3at Type 2 hardware  
classification, or APD is active.  
17  
21  
REF  
CLS  
O
O
Internal 1.25-V voltage reference. Connect a 49.9-kΩ_1% resistor from REF to VSS.  
Connect a resistor from CLS to VSS to program the classification current.  
Positive input power rail for PoE interface circuit and source of DC-DC converter start-up current.  
Bypass with a 0.1 µF to VSS and protect with a TVS.  
23  
24  
VDD  
DEN  
Connect a 25.5-kΩ resistor from DEN to VDD to provide the PoE detection signature. Pulling this  
pin to VSS during powered operation causes the internal hotswap MOSFET to turn off.  
I/O  
27, 28  
30  
VSS  
-
Negative power rail derived from the PoE source.  
Used internally for test purposes only. Leave open.  
TEST  
O
This pin sets the SST discharge current during a soft-stop event independently from the setting  
used during a regular soft-start event. Connect a resistor from this pin to AGND to set the DC/DC  
soft-stop rate.  
32  
33  
I_STP  
SST  
I
A capacitor from SST to RTN pin sets the soft-start (ISSC charge current) and the hiccup timer (ISSD  
discharge current) for the DC-DC converter. Connect a capacitor from this pin to RTN to set the  
DC/DC startup rate.  
I/O  
Converter error amplifier inverting (feedback) input. If flyback configuration with primary-side  
regulation, it is typically driven by a voltage divider and capacitor from the auxiliary winding,  
working with CP pin, FB also being connected to the COMP compensation network. If optocoupler  
feedback is enabled, tie FB to VB.  
34  
FB  
I
Compensation output of the DC-DC convertor error amplifier or control loop input to the PWM. If  
the internal error amplifier is used, connect the compensation networks from this pin to the FB pin  
to compensate the converter. If optocoupler feedback is enabled, the optocoupler and its network  
pulled up to VB directly drives the COMP pin.  
35  
36  
COMP  
I/O  
I
Error Amplifier disable input, referenced to AGND, internally pulled-up to 5V internal rail. Leave  
EA_DIS open to disable the Error amplifier, to enable optocoupler feedback for example. Connect  
to AGND otherwise.  
EA_DIS  
5-V bias rail for DC/DC control circuits and the feedback optocoupler (when in use). Connect a 0.1-  
uF capacitor from this pin to AGND to provide bypassing.  
37  
38  
VB  
O
I
LINEUV is used to monitor the bulk capacitor voltage to trigger a soft-stop event when an  
undervoltage condition is detected if APD is low. If not used, connect LINEUV to VB pin.  
LINEUV  
PSR Sync enable input, referenced to AGND, internally pulled-up to 5V internal rail. PSRS works  
with CP pin to support flyback architecture using primary-side regulation. Leave PSRS open if the  
flyback output stage is configured with synchronous rectification and uses PSR. If diode  
rectification is used, or for applications not using PSR, connect PSRS to AGND.  
39  
40  
PSRS  
VBG  
I
5-V bias rail for the switching FET gate driver circuit. For internal use only. Bypass with a 0.1-μF  
ceramic capacitor to GND pin.  
O
DC/DC converter bias voltage. The internal startup current source and converter bias winding  
output power this pin. Connect a 1µF minimum ceramic capacitor to RTN.  
42  
43  
VCC  
I/O  
O
GATE  
Gate drive output for the main DC-DC converter switching MOSFET  
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Table 6-1. Pin Functions (continued)  
PIN  
I/O  
DESCRIPTION  
NO.  
44  
NAME  
CP  
CP provides the clamp for the primary-side regulation loop. Connect this pin to the lower end of the  
bias winding of the flyback transformer.  
O
-
45  
GND  
.Power ground used by the flyback power FET gate driver and CP. Connect to RTN.  
6, 10, 12,  
15, 16,  
18-20, 22,  
25, 26, 29,  
31, 41  
NC  
-
No connect pin. Leave open.  
The exposed thermal pad must be connected to VSS. A large fill area is required to assist in heat  
dissipation.  
47  
46  
PAD_S  
PAD_G  
-
-
The exposed thermal pad must be connected to RTN. A large fill area is required to assist in heat  
dissipation.  
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7 Specifications  
7.1 Absolute Maximum Ratings  
Voltage are with respect to VSS (unless otherwise noted)(1)  
MIN  
–0.3  
–0.3  
–0.3  
-0.3  
-0.3  
-0.3  
-0.3  
-0.3  
-0.3  
-0.3  
MAX  
100  
UNIT  
VDD, DEN, GND, AGND, RTN(2)  
Input voltage  
VDD to RTN  
100  
V
APD, FB, CS, EA_DIS, LINEUV, PSRS, EMPS, all to RTN  
6.5  
FRS(3), COMP, VB(3), VBG(3), I_STP(3), DTHR(3), SST(3), all to RTN  
6.5  
VCC to RTN  
GATE(3) to RTN  
CP to GND  
GND, AGND, all to RTN  
REF(3) , CLS(3)  
T2P, APDO , all to RTN  
VB, VBG, VCC  
COMP  
19  
VCC+0.3  
60  
Voltage  
V
0.3  
6.5  
19  
Internally limited  
Internally limited  
Internally limited  
Sourcing current  
Sourcing current  
Sinking current  
Sinking current  
mA  
mA  
mA  
REF  
CLS  
65  
1
RTN  
Internally limited  
Internally limited  
DEN  
COMP  
T2P, APDO  
10  
2
mA  
A
Peak sourcing  
current  
CP  
Peak sinking current CP  
TJ(max) Maximum junction temperature  
Tstg Storage temperature  
0.7  
A
Internally Limited  
–65  
°C  
°C  
150  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under  
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability.  
(2) IRTN = 0 for VRTN > 80 V.  
(3) Do not apply voltage to these pins.  
7.2 ESD Ratings  
VALUE  
±2000  
±500  
UNIT  
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)  
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)  
IEC 61000-4-2 contact discharge(3)  
V(ESD)  
Electrostatic discharge  
V
±8000  
±15000  
IEC 61000-4-2 air-gap discharge(3)  
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
(3) Surges per EN61000-4-2, 1999 applied between RJ-45 and output ground and between adapter input and output ground of  
the TPS23730, TPS23730EVM-093 evaluation module (documentation available on the web). These were the test levels, not the  
failure threshold.  
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7.3 Recommended Operating Conditions  
Voltage with respect to VSS (unless otherwise noted)  
MIN  
0
NOM  
MAX  
60  
UNIT  
VDD, RTN, GND, AGND  
VCC to RTN  
0
16  
Input voltage range APD, EA_DIS, LINEUV, PSRS, FB, all to RTN  
0
VB  
2
V
CS to RTN  
CP to GND  
0
0
45  
Voltage range  
Voltage range  
Sinking current  
Sinking current  
COMP to RTN  
VB  
VCC  
0.65  
3
V
V
T2P, APDO, all to RTN  
0
RTN  
A
T2P, APDO  
mA  
VCC  
20  
Sourcing current  
mA  
μF  
VB  
5
VB, VBG(1)  
0.08  
0.7  
0.1  
1
1
Capacitance  
Resistance  
Resistance  
VCC  
100  
499  
I_STOP  
16.5  
30  
KΩ  
Ω
CLS(1)  
REF(1)  
48.9  
35  
49.9  
50.9  
125  
kΩ  
ns  
°C  
Synchronization pulse width input (when used)  
Operating junction temperature  
TJ  
–40  
(1) Voltage should not be externally applied to this pin.  
7.4 Thermal Information  
RMT (VSON)  
45 PINS  
38.5  
THERMAL METRIC  
UNIT  
(1)  
RθJA  
Junction-to-ambient thermal resistance  
RθJC(top)  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
23.6  
(1)  
RθJB  
19.3  
(1)  
ψJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom PAD_S pad) thermal resistance  
6.8  
°C/W  
(1)  
ψJB  
19.3  
RθJC(bot_POE)  
3.9  
RθJC(bot_DCDC) Junction-to-case (bottom PAD_G pad) thermal resistance  
9.1  
(1) Thermal metrics are not JEDEC standard values and are based on the TPS23731EVM-095 evaluation board.  
7.5 Electrical Characteristics: DC-DC Controller Section  
Unless otherwise noted, VVDD = 48 V; RDEN = 25.5 kΩ; RFRS = 60.4 kΩ; RI_STP = 499 kΩ; CLS, T2P, APDO, and  
PSRS open; CS, EA_DIS, APD, EMPS, AGND and GND connected to RTN; FB, LINEUV and DTHR connected  
to VB; CVB = CVBG = 0.1 μF; CVCC = 1 μF; CSST = 0.047 μF; RREF = 49.9 kΩ; 8.5 V ≤ VVCC ≤ 16 V; –40°C ≤ TJ ≤  
125°C. Positive currents are into pins unless otherwise noted. Typical values are at 25°C.  
[VVSS = VRTN], all voltages referred to VRTN , VAGND and VGND unless otherwise noted.  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
DC-DC SUPPLY (VCC)  
VCUVLO_  
VVCC rising  
8
5.85  
2
8.25  
6.1  
8.5  
6.35  
2.3  
V
V
V
R
VCUVLO_F Undervoltage lockout  
VVCC falling, VFB = VRTN  
Hysteresis(1)  
VCUVLO_  
2.15  
H
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7.5 Electrical Characteristics: DC-DC Controller Section (continued)  
Unless otherwise noted, VVDD = 48 V; RDEN = 25.5 kΩ; RFRS = 60.4 kΩ; RI_STP = 499 kΩ; CLS, T2P, APDO, and  
PSRS open; CS, EA_DIS, APD, EMPS, AGND and GND connected to RTN; FB, LINEUV and DTHR connected  
to VB; CVB = CVBG = 0.1 μF; CVCC = 1 μF; CSST = 0.047 μF; RREF = 49.9 kΩ; 8.5 V ≤ VVCC ≤ 16 V; –40°C ≤ TJ ≤  
125°C. Positive currents are into pins unless otherwise noted. Typical values are at 25°C.  
[VVSS = VRTN], all voltages referred to VRTN , VAGND and VGND unless otherwise noted.  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
VVCC = 10 V, VFB = VRTN , RDT = 24.9 kΩ, CP with 2-  
kΩ pull up to 30 V  
IRUN  
Operating current  
1.2  
2
2.4  
mA  
mA  
VAPD = 2.5V  
VVDD ≥ 28V, VVCC = 11.7 V  
VVDD = 10.2V, VVCC = 8.6 V  
VVDD = 10.2V, VVCC = 6.8 V  
21.5  
1
30  
6
34  
17.5  
32  
IVC_ST  
Startup source current  
8
16  
VVDD = 10.2 V, VVCC(0) = 0 V, measure time until  
VCUVLO_R  
0.25  
0.24  
0.7  
1.15  
0.48  
ms  
ms  
tST  
Startup time, CVCC = 1 μF  
VCC startup voltage  
VVDD = 35 V, VVCC(0) = 0 V, measure time until  
VCUVLO_R  
0.35  
Measure VVCC during startup, IVCC = 0 mA  
Measure VVCC during startup, IVCC = 21.5 mA  
11  
11  
12.5  
12.5  
14  
14  
VVC_ST  
V
V
VLINEUV < VLIUVF, Measure VVCC during soft-stop, IVCC  
= 0 mA  
11  
11  
12.5  
12.5  
14  
14  
VVC_SSTP VCC soft-stop voltage  
VLINEUV < VLIUVF, Measure VVCC during soft-stop, IVCC  
= 21.5 mA  
VB  
Voltage  
VFB = VRTN, 8.5 V ≤ VVCC ≤ 16 V, 0 ≤ IVB ≤ 5 mA  
4.75  
5.0  
5.25  
V
kHz  
V
DC-DC TIMING (FRS)  
fSW  
Switching frequency  
Duty cycle  
VFB = VRTN, Measure at GATE  
VFB = VRTN, RDT = 24.9 kΩ, Measure at GATE  
Input threshold  
223  
74.5%  
2
248  
78.5%  
2.2  
273  
82.5%  
2.4  
DMAX  
VSYNC  
Synchronization  
FREQUENCY DITHERING RAMP GENERATOR (DTHR)  
3 x IFRS  
49.6  
µA  
µA  
µA  
µA  
V
IDTRCH Charging (sourcing) current 0.5 V < VDTHR < 1.5 V  
47.2  
52.1  
3 x IFRS  
49.6  
IDTRDC  
Discharging (sinking) current 0.5 V < VDTHR < 1.5 V  
47.2  
1.41  
52.1  
1.60  
VDTUT  
VDTLT  
VDTPP  
Dithering upper threshnold  
Dithering lower threshold  
Dithering pk-pk amplitude  
VDTHR rising until IDTHR > 0  
VDTHR falling until IDTHR < 0  
1.513  
0.487  
1.026  
0.43  
0.54  
V
1.005  
1.046  
V
ERROR AMPLIFIER (FB, COMP)  
VREFC  
IFB_LK  
Feedback regulation voltage  
1.723  
1.75  
1.2  
1.777  
0.5  
V
FB leakage current (source or  
sink)  
VFB = 1.75 V  
μA  
Small signal unity gain  
bandwidth  
GBW  
0.9  
MHz  
AOL  
Open loop voltage gain  
0% duty-cycle threshold  
COMP source current  
COMP sink current  
70  
1.35  
1
80  
db  
V
VZDC  
VCOMP falling until GATE switching stops  
VFB = VRTN , VCOMP = 3 V  
1.5  
1.65  
ICOMPH  
ICOMPL  
mA  
mA  
V
VFB = VVB , VCOMP = 1.25 V  
2.1  
4
6
VCOMPH COMP high voltage  
VCOMPL COMP low voltage  
VFB = VRTN , 15 kΩ from COMP to RTN  
VFB = VVB , 15 kΩ from COMP to VB  
VB  
1.1  
V
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7.5 Electrical Characteristics: DC-DC Controller Section (continued)  
Unless otherwise noted, VVDD = 48 V; RDEN = 25.5 kΩ; RFRS = 60.4 kΩ; RI_STP = 499 kΩ; CLS, T2P, APDO, and  
PSRS open; CS, EA_DIS, APD, EMPS, AGND and GND connected to RTN; FB, LINEUV and DTHR connected  
to VB; CVB = CVBG = 0.1 μF; CVCC = 1 μF; CSST = 0.047 μF; RREF = 49.9 kΩ; 8.5 V ≤ VVCC ≤ 16 V; –40°C ≤ TJ ≤  
125°C. Positive currents are into pins unless otherwise noted. Typical values are at 25°C.  
[VVSS = VRTN], all voltages referred to VRTN , VAGND and VGND unless otherwise noted.  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
100  
0.2  
MAX UNIT  
COMP input resistance, error  
amplifier disabled  
EA_DIS open  
70  
130  
kΩ  
COMP to CS gain  
ΔVCS / ΔVCOMP , 0 V < VCS < 0.22 V  
0.19  
0.21  
V/V  
SOFT-START, SOFT-STOP (SST, I_STP)  
ISSC  
Charge current  
SST charging, 6.35 V ≤ VVCC ≤ 16 V  
SST discharging, 6.35 V ≤ VVCC ≤ 16 V  
7.5  
3
10  
4
12.5  
5
µA  
µA  
V
ISSD  
Discharge current  
Soft-start lower threshold  
VSFST  
0.15  
1.99  
0.2  
2.1  
0.25  
2.21  
VSTUOF Startup turn off threshold  
VSST rising until VCC startup turns off  
V
Soft-start offset voltage,  
VFB = VRTN, VSST rising until start of switching  
0.2  
0.25  
0.6  
0.3  
V
closed-loop mode  
VSSOFS  
Soft-start offset voltage, peak VCOMP = VVB, VSST rising until start of switching,  
0.55  
0.65  
V
V
current mode  
EA_DIS open  
VSSCL  
Soft-start clamp  
2.3  
1.5  
2.6  
2.5  
RI_STP = 499 kΩ, VLINEUV < VLIUVF  
RI_STP = 16.5 kΩ, ,VLINEUV < VLIUVF  
2
SST discharge current in soft-  
stop mode  
ISSD_SP  
µA  
V
52.5  
60.6  
67.5  
VSSTPEN  
End of soft-stop threshold  
VFB = VRTN, VLINEUV < VLIUVF  
0.15  
0.2  
0.25  
D
CURRENT SENSE (CS)  
VCSMAX Maximum threshold voltage  
tOFFD_IL Current limit turn off delay  
VFB = VRTN, VCS rising  
VCS = 0.3 V  
0.227  
25  
0.25  
41  
0.273  
60  
V
ns  
PWM comparator turn off  
tOFFD_PW  
delay  
VCS = 0.15 V, EA_DIS open, VCOMP = 2 V  
In addtition to tOFFD_IL and tOFFD_PW  
25  
75  
51  
41  
95  
66  
60  
115  
79  
ns  
ns  
Blanking delay  
Internal slope compensation  
VFB = VRTN, Peak voltage at maximum duty cycle,  
referred to CS  
VSLOPE  
voltage  
mV  
Peak slope compensation  
current  
VFB = VRTN, ICS at maximum duty cycle (ac  
component)  
ISL_EX  
14  
-3  
20  
-2  
26  
-1  
μA  
μA  
Bias current  
DC component of CS current  
LINE UNDERVOLTAGE, SOFT-STOP (LINEUV)  
VLIUVF  
VLIUVH  
VLINEUV falling  
Hysteresis(1)  
VLINEUV = 3 V  
2.86  
57  
2.918  
82  
2.976  
107  
1
V
LINEUV falling threshold  
voltage  
mV  
µA  
Leakage current  
GATE  
VFB = VRTN , VVCC = 10 V, VGATE = 0 V, pulsed  
measurement  
Peak source current  
Peak sink current  
0.3  
0.6  
0.5  
0.9  
0.8  
A
A
VFB = VRTN , VVCC = 10 V, VGATE = 10 V, pulsed  
measurement  
1.45  
Rise time(2)  
Fall time(2)  
tprr10-90 , CGATE = 1 nF , VVCC = 10 V  
tpff90-10 , CGATE = 1 nF , VVCC = 10 V  
30  
15  
ns  
ns  
CLAMPING FET (CP)  
RDS(ON)C  
CP FET on resistance  
ICP = 100 mA  
1.5  
3.3  
Ω
L
CLAMPING DIODE (CP)  
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7.5 Electrical Characteristics: DC-DC Controller Section (continued)  
Unless otherwise noted, VVDD = 48 V; RDEN = 25.5 kΩ; RFRS = 60.4 kΩ; RI_STP = 499 kΩ; CLS, T2P, APDO, and  
PSRS open; CS, EA_DIS, APD, EMPS, AGND and GND connected to RTN; FB, LINEUV and DTHR connected  
to VB; CVB = CVBG = 0.1 μF; CVCC = 1 μF; CSST = 0.047 μF; RREF = 49.9 kΩ; 8.5 V ≤ VVCC ≤ 16 V; –40°C ≤ TJ ≤  
125°C. Positive currents are into pins unless otherwise noted. Typical values are at 25°C.  
[VVSS = VRTN], all voltages referred to VRTN , VAGND and VGND unless otherwise noted.  
PARAMETER  
TEST CONDITIONS  
VPSRS = 0 V, ICP = 15 mA  
VPSRS = 0 V, VCP = 45 V  
MIN  
TYP  
MAX UNIT  
VFCP  
CP Diode forward voltage  
CP Leakage current  
0.45  
0.6  
0.85  
20  
V
µA  
AUXILIARY POWER DETECTION (APD, APDO)  
VAPDEN  
VAPDH  
VAPD rising  
1.42  
1.5  
1.58  
0.115  
1
V
V
APD threshold voltage  
Hysteresis(1)  
0.075  
0.095  
Leakage current  
VAPD = 5 V  
µA  
V
VAPL  
APDO output low voltage  
Leakage current  
VAPD = 5 V, IAPDO = 1 mA, startup has completed  
VAPDO = 10 V  
0.27  
0.5  
1
µA  
THERMAL SHUTDOWN  
Turnoff temperature  
Hysteresis(2)  
145  
155  
15  
165  
°C  
°C  
(1) The hysteresis tolerance tracks the rising threshold for a given device.  
(2) These parameters are provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's  
product warranty.  
7.6 Electrical Characteristics PoE  
Unless otherwise noted, VVDD = 48 V; RDEN = 25.5 kΩ; RFRS = 60.4 kΩ; RI_STP = 499 kΩ; CLS, T2P, APDO, and  
PSRS open; CS, EA_DIS, APD, EMPS, AGND and GND connected to RTN; FB, LINEUV and DTHR connected  
to VB; CVB = CVBG = 0.1 μF; CVCC = 1 μF; CSST = 0.047 μF; RREF = 49.9 kΩ; –40°C ≤ TJ ≤ 125°C. Positive  
currents are into pins unless otherwise noted. Typical values are at 25°C.  
VVCC-RTN = 0 V, all voltages referred to VVSS unless otherwise noted.  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
PD DETECTION (DEN)  
DEN open, VVDD = 10 V, Not in mark, Measure  
IVDD + IRTN  
Detection bias current  
3.5  
6.9  
13.9  
µA  
Ilkg  
DEN leakage current  
Detection current  
VDEN = VVDD = 60 V, Float RTN, Measure IDEN  
Measure IVDD + IDEN + IRTN, VVDD = 1.4 V  
0.1  
5
µA  
μA  
53.5  
391  
56.5  
58.6  
Measure IVDD + IDEN + IRTN, VVDD = 10 V, Not in  
mark  
398  
4
406.2  
5
μA  
V
Hotswap disable  
threshold  
VPD_DIS  
DEN falling  
3
PD CLASSIFICATION (CLS)  
13 V ≤ VDD ≤ 21 V,  
RCLS = 806 Ω  
RCLS = 130 Ω  
RCLS = 69.8 Ω  
RCLS = 46.4 Ω  
Measure IVDD + IDEN  
IRTN  
+
+
+
+
1.9  
9.9  
2.5  
10.6  
18.6  
27.9  
2.9  
11.3  
19.4  
29.3  
mA  
mA  
mA  
mA  
13 V ≤ VDD ≤ 21 V,  
Measure IVDD + IDEN  
IRTN  
Classification signature  
current  
ICLS  
13 V ≤ VDD ≤ 21 V,  
Measure IVDD + IDEN  
IRTN  
17.6  
26.5  
13 V ≤ VDD ≤ 21 V,  
Measure IVDD + IDEN  
IRTN  
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7.6 Electrical Characteristics PoE (continued)  
Unless otherwise noted, VVDD = 48 V; RDEN = 25.5 kΩ; RFRS = 60.4 kΩ; RI_STP = 499 kΩ; CLS, T2P, APDO, and  
PSRS open; CS, EA_DIS, APD, EMPS, AGND and GND connected to RTN; FB, LINEUV and DTHR connected  
to VB; CVB = CVBG = 0.1 μF; CVCC = 1 μF; CSST = 0.047 μF; RREF = 49.9 kΩ; –40°C ≤ TJ ≤ 125°C. Positive  
currents are into pins unless otherwise noted. Typical values are at 25°C.  
VVCC-RTN = 0 V, all voltages referred to VVSS unless otherwise noted.  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
13 V ≤ VDD ≤ 21 V,  
RCLS = 32 Ω  
RCLS = 32 Ω  
Measure IVDD + IDEN  
IRTN  
+
+
37.8  
39.9  
42  
mA  
13 V ≤ VDD ≤ 21 V,  
Measure IVDD + IDEN  
IRTN  
Classification signature  
current, 3rd class event  
ICLS  
37.8  
39.9  
42  
mA  
Classification regulator  
lower threshold rising  
VCL_ON  
VCL_H  
VVDD rising, ICLS  
Hysteresis(1)  
11.4  
0.8  
12.2  
1.2  
13  
V
V
Classification regulator  
lower threshold  
1.6  
VCU_OFF  
VCU_H  
VVDD rising, ICLS  
Hysteresis(1)  
21  
22  
23  
1
V
V
Classification regulator  
upper threshold  
0.5  
0.77  
Mark state reset  
threshold  
VMSR  
VVDD falling  
3
6
3.9  
10  
5
12  
1
V
Mark state resistance  
Leakage current  
2-point measurement at 5 V and 10.1 V  
kΩ  
μA  
VVDD = 60 V, VCLS = 0 V, VDEN = VVSS, Measure  
ICLS  
Ilkg  
Long first class event  
timing  
tLCF_PD  
Class 1st event time duration for short MPS  
76  
81.5  
87  
ms  
RTN (PASS DEVICE)  
ON-resistance  
0.3  
0.55  
1.1  
A
ILIM  
Current limit  
VRTN = 1.5 V, pulsed measurement  
0.75  
100  
0.925  
VRTN = 2 V, VVDD: 20 V → 48 V, measure IRTN  
pulsed measurement  
,
IIRSH  
inrush current limit  
140  
180  
mA  
Percentage of inrush current.  
Inrush delay  
80%  
80  
90%  
84  
99%  
88  
Inrush termination  
tINR_DEL  
ms  
V
Foldback voltage  
threshold  
VRTN rising  
13.5  
1.5  
14.8  
1.8  
16.1  
VRTN rising to when current limit changes to  
Foldback deglitch time inrush current limit. This applies in normal  
operating condition or during auto MPS mode.  
2.1  
70  
ms  
μA  
Leakage current  
VVDD = VRTN = 100 V, VDEN = VVSS  
PSE TYPE INDICATION (T2P)  
IT2P = 1 mA, after 2- or 3-event classification,  
startup has completed, VRTN = 0 V  
Output low voltage  
0.27  
0.5  
1
V
Leakage current  
VT2P-RTN = 10 V, VRTN = 0 V  
µA  
PD INPUT SUPPLY (VDD)  
Undervoltage lockout  
threshold  
VUVLO_R  
VVDD rising  
VVDD falling  
Hysteresis (1)  
35.8  
30.5  
5.7  
37.6  
32  
39.5  
33.6  
6.3  
V
V
Undervoltage lockout  
threshold  
VUVLO_F  
Undervoltage lockout  
threshold  
VUVLO_H  
6.0  
650  
V
40 V ≤ VVDD ≤ 60 V, Startup completed, VVCC  
10 V, Measure IVDD  
=
IVDD_ON  
Operating current  
1040  
µA  
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7.6 Electrical Characteristics PoE (continued)  
Unless otherwise noted, VVDD = 48 V; RDEN = 25.5 kΩ; RFRS = 60.4 kΩ; RI_STP = 499 kΩ; CLS, T2P, APDO, and  
PSRS open; CS, EA_DIS, APD, EMPS, AGND and GND connected to RTN; FB, LINEUV and DTHR connected  
to VB; CVB = CVBG = 0.1 μF; CVCC = 1 μF; CSST = 0.047 μF; RREF = 49.9 kΩ; –40°C ≤ TJ ≤ 125°C. Positive  
currents are into pins unless otherwise noted. Typical values are at 25°C.  
VVCC-RTN = 0 V, all voltages referred to VVSS unless otherwise noted.  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
RTN, GND and VCC open, VVDD = 30 V, Measure  
IVDD  
IVDD_OFF  
MPS  
Off-state current  
730  
µA  
MPS total VSS current EMPS open, inrush delay has completed, 0 mA ≤  
for Type 1-2 PSE IRTN ≤ 10 mA, measure IVSS  
IMPSL  
10  
16.25  
26.2%  
76  
12.5  
19  
15.5  
21.5  
26.9%  
87  
mA  
mA  
MPS total VSS current EMPS open, inrush delay has completed, 0 mA ≤  
IMPSH  
for Type 3-4 PSE  
IRTN ≤ 16 mA, measure IVSS  
MPS pulsed current  
duty-cycle  
EMPS open  
26.6%  
81.5  
225  
MPS pulsed mode duty MPS pulsed current ON  
cycle for Type 1-2 PSE time  
tMPSL  
EMPS open  
EMPS open  
ms  
ms  
MPS pulsed current  
OFF time  
245  
MPS pulsed current  
duty-cycle, no pulse  
stretching  
EMPS open  
EMPS open  
2.9%  
7.2  
3.0%  
7.7  
3.1%  
8.1  
MPS pulsed current ON  
time, no pulse  
stretching  
tMPSH  
ms  
MPS pulsed mode duty-  
cycle for Type 3-4 PSE  
MPS pulsed current  
OFF time  
EMPS open  
EMPS open  
238  
54  
250  
57  
265  
62  
ms  
ms  
MPS pulsed current ON  
time stretching limit  
THERMAL SHUTDOWN  
Turnoff temperature  
Hysteresis(2)  
148  
158  
15  
168  
°C  
°C  
(1) The hysteresis tolerance tracks the rising threshold for a given device.  
(2) These parameters are provided for reference only.  
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7.7 Typical Characteristics  
12.5  
0.96  
0.95  
0.94  
0.93  
0.92  
0.91  
0.9  
10  
7.5  
5
TJ = -40èC  
TJ = 25èC  
TJ = 125èC  
2.5  
0
1
2
3
4
VDD-VSS Voltage (V)  
5
6
7
8
9
10  
-50  
-25  
0
25  
50  
75  
100  
125  
Junction Temperature (èC)  
D001  
D003  
Figure 7-1. Detection Bias Current vs Voltage  
Figure 7-2. PoE Current Limit vs Temperature  
0.5  
1000  
950  
900  
850  
800  
750  
700  
650  
0.45  
0.4  
0.35  
0.3  
TJ = -40èC  
TJ = 25èC  
TJ = 125èC  
600  
550  
500  
0.25  
0.2  
-50  
-25  
0
25  
50  
75  
100  
125  
25  
30  
35  
40 45  
VDD-VSS Voltage (V)  
50  
55  
60  
Junction Temperature (èC)  
D004  
D005  
Figure 7-3. Pass FET Resistance vs Temperature  
Figure 7-4. VDD Supply Current vs Voltage  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
VVCC = 11.7 V  
TJ = -40èC  
TJ = 25èC  
VVCC = 6.8 V  
TJ = -40èC  
TJ = 25èC  
24  
23  
22  
21  
20  
24  
23  
22  
21  
20  
TJ = 125èC  
TJ = 125èC  
15  
20  
25  
30  
VDD-RTN Voltage (V)  
35  
40  
45  
50  
55  
60  
10  
15  
20  
25  
VDD-RTN Voltage (V)  
30  
35  
40  
45  
50  
55  
D006  
D007  
Figure 7-5. Converter Startup Current vs VDD Input Figure 7-6. Converter Startup Current vs VDD Input  
Voltage  
Voltage  
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13  
12.5  
12  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
11.5  
11  
10.5  
10  
9.5  
9
TJ = -40èC  
TJ = 25èC  
TJ = 125èC  
8.5  
8
0
0
3
6
9
12  
15  
18  
21  
VCC Sourcing Current (mA)  
24  
27  
30  
0
50 100 150 200 250 300 350 400 450 500  
I_STP Programmable Resistance (kW)  
D008  
D009  
Figure 7-7. Converter Startup Voltage vs Current  
Figure 7-8. Controller SST Soft Stop Sink Current  
vs Programmed Resistance  
3
2.9  
2.8  
2.7  
2.6  
2.5  
2.4  
2.3  
2.2  
450  
400  
RFRS = 37.4 kW  
RFRS = 60.4 kW  
RFRS = 301 kW  
350  
300  
250  
200  
150  
100  
50  
2.1  
RFRS = 37.4 kW  
2
RFRS = 60.4 kW  
1.9  
1.8  
1.7  
1.6  
1.5  
RFRS = 301 kW  
0
9
9.75  
10.5  
11.25 12  
VCC Voltage (V)  
12.75  
13.5  
-50  
-25  
0
25  
50  
75  
100  
125  
Junction Temperature (èC)  
D010  
D011  
Figure 7-9. Controller Bias Current vs Voltage  
Figure 7-10. Switching Frequency vs Temperature  
800  
81  
80.5  
80  
RFRS = 37.4 kW  
600  
400  
200  
0
RFRS = 60.4 kW  
79.5  
RFRS = 301 kW  
79  
78.5  
78  
77.5  
77  
76.5  
76  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
-50  
-25  
0
25  
50  
75  
100  
125  
Programmable Conductance (106/RFRS (W-1  
)
Junction Temperature (èC)  
D012  
D013  
Figure 7-11. Switching Frequency vs Programmed Figure 7-12. Maximum Duty Cycle vs Temperature  
Resistance  
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1.76  
1.758  
1.756  
1.754  
1.752  
1.75  
24  
23.2  
22.4  
21.6  
20.8  
20  
1.748  
1.746  
1.744  
1.742  
1.74  
19.2  
18.4  
17.6  
16.8  
16  
-50  
-25  
0
25  
50  
75  
100  
125  
-50  
-25  
0
25  
50  
75  
100  
125  
Junction Temperature (èC)  
Junction Temperature (èC)  
D014  
D015  
Figure 7-13. Feedback Regulation Voltage vs  
Temperature  
Figure 7-14. Current Slope Compensation Current  
vs Temperature  
100  
99.5  
99  
4
TJ = -40èC  
3.6  
TJ = 25èC  
TJ = 125èC  
3.2  
2.8  
2.4  
2
98.5  
98  
97.5  
97  
1.6  
1.2  
0.8  
0.4  
0
96.5  
96  
95.5  
95  
-50  
-25  
0
25  
50  
75  
100  
125  
0
0.5  
1
1.5  
2
COMP Voltage (V)  
2.5  
3
3.5  
4
4.5  
5
Junction Temperature (èC)  
D016  
D019  
Figure 7-15. Blanking Period vs Temperature  
Figure 7-16. Error Amplifier Source Current  
20  
18  
16  
14  
12  
10  
8
100  
TJ = -40èC  
TJ = 25èC  
TJ = 125èC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
6
TJ = -40èC  
TJ = 25èC  
TJ = 125èC  
4
2
0
-10  
-20  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
5M  
0
0.4 0.8 1.2 1.6  
2
COMP Voltage (V)  
2.4 2.8 3.2 3.6  
4
D021  
D020  
Figure 7-18. Error Amplifier Gain vs Frequency  
Figure 7-17. Error Amplifier Sink Current  
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135  
120  
105  
90  
75  
60  
45  
30  
15  
0
TJ = -40èC  
TJ = 25èC  
TJ = 125èC  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
5M  
D022  
Figure 7-19. Error Amplifier Phase vs Frequency  
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8 Detailed Description  
8.1 Overview  
The TPS23731 device is a 45-pin integrated circuit that contains all of the features needed to implement a single  
interface IEEE 802.3bt Type 3 Class 1-4 and IEEE802.3at powered device (PD), combined with a current-mode  
DC-DC controller optimized for flyback switching regulator design. The TPS23731 applies to flyback converter  
applications, also supporting the use of primary side control.  
Basic PoE PD functionality supported includes detection, hardware classification, and inrush current limit during  
startup. DC-DC converter features include startup function and current mode control operation. The TPS23731  
device integrates a low 0.3-Ω internal switch to minimize heat dissipation and maximize power utilization.  
A number of input voltage Oring options or input voltage ranges are also supported by use of APD input.  
The TPS23731 device contains several protection features such as thermal shutdown, current limit foldback, and  
a robust 100-V internal return switch.  
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8.2 Functional Block Diagram  
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8.3 Feature Description  
See Figure 9-1 for component reference designators (RCS for example ), and Electrical Characteristics: DC-DC  
Controller Section for values denoted by reference (VCSMAX for example). Electrical Characteristic values take  
precedence over any numerical values used in the following sections.  
8.3.1 CLS Classification  
An external resistor (RCLS in Figure 9-1 ) connected between the CLS pin and VSS provides a classification  
signature to the PSE. The controller places a voltage of approximately 1.25 V across the external resistor  
whenever the voltage differential between VPD and VSS lies from about 11 V to 22 V. The current drawn by this  
resistor, combined with the internal current drain of the controller and any leakage through the internal pass  
MOSFET, creates the classification current. Table 8-1 lists the external resistor values required for each of the  
PD power ranges defined by IEEE802.3at. The maximum average power drawn by the PD, plus the power  
supplied to the downstream load, should not exceed the maximum power indicated in Table 8-1. The TPS23731  
supports class 0 – 4 power levels. Holding APD high disables the classification signatures.  
Table 8-1. Class Resistor Selection  
POWER AT PD PI  
CLASS  
RESISTOR (Ω)  
MINIMUM (W)  
0.44  
MAXIMUM (W)  
12.95  
0
1
2
3
4
806  
130  
69.8  
46.4  
32  
0.44  
3.84  
3.84  
6.49  
6.49  
12.95  
12.95  
25.5  
8.3.2 DEN Detection and Enable  
DEN pin implements two separate functions. A resistor (RDEN in Figure 9-1) connected between VDD and DEN  
generates a detection signature whenever the voltage differential between VDD and VSS lies from  
approximately 1.4 to 10.9 V. Beyond this range, the controller disconnects this resistor to save power. The IEEE  
802.3bt and IEEE 802.3at standards specify a detection signature resistance, Rdetect from 23.75 kΩ to 26.25 kΩ,  
or 25 kΩ ± 5%. TI recommends a resistor of 25.5 kΩ ± 1% for RDEN  
.
Pulling DEN to VSS during powered operation causes the internal hotswap MOSFET and class regulator to turn  
off. If the resistance connected between VDD and DEN is divided into two roughly equal portions, then the  
application circuit can disable the PD by grounding the tap point between the two resistances, while  
simultaneously spoiling the detection signature which prevents the PD from properly re-detecting.  
8.3.3 APD Auxiliary Power Detect  
The APD pin is used in applications that may draw power either from the Ethernet cable or from an auxiliary  
power source. When a voltage of more than about 1.5 V is applied on the APD pin relative to RTN, the  
TPS23731 does the following:  
Internal pass MOSFET is turned off  
Classification current is disabled  
The LINEUV input is disabled  
Maintain Power Signature (MPS) pulsed mode is disabled  
T2P and APDO outputs are turned on (low state)  
This also gives adapter source priority over the PoE. A resistor divider (RAPD1–RAPD2 in Figure 9-1) provides  
system-level ESD protection for the APD pin, discharges leakage from the blocking diode (DA in Figure 9-1) and  
provides input voltage supervision to ensure that switch-over to the auxiliary voltage source does not occur at  
excessively low voltages. If not used, connect APD to RTN.  
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8.3.4 Internal Pass MOSFET  
RTN pin provides the negative power return path for the load. It is internally connected to the drain of the PoE  
hotswap MOSFET, and the DC-DC controller return. RTN must be treated as a local reference plane (ground  
plane) for the DC-DC controller and converter primary to maintain signal integrity.  
Once VVDD exceeds the UVLO threshold, the internal pass MOSFET pulls RTN to VSS. Inrush limiting prevents  
the RTN current from exceeding a nominal value of about 140 mA until the bulk capacitance (CBULK in Figure  
9-1) is fully charged. Two conditions must be met to reach the end of inrush phase. The first one is when the  
RTN current drops below about 90% of nominal inrush current at which point the current limit is changed to  
0.925 A, while the second one is to ensure a minimum inrush delay period of 80 ms (tINR_DEL) from beginning of  
the inrush phase. DC-DC converter switching is permitted once both inrush conditions are met, meaning that the  
bulk capacitance is fully charged and the inrush period has been completed.  
If VRTN - VVSS ever exceeds about 14.8 V for longer than 1.8 ms, then the PD returns to inrush limiting; note that  
in this particular case, the second condition described above about inrush phase duration (80 ms) is not  
applicable  
8.3.5 T2P and APDO Indicators  
The state of T2P is used to provide information relative to the allocated power. Table 8-2 lists T2P state  
corresponding to various combinations of PSE Type, PD Class and allocated power. The allocated power is  
determined by the number of classification cycles having been received. The PSE may also allocate a lower  
power than what the PD is requesting, in which case there is power demotion. The APDO output can also be  
used to indicate the presence of auxiliary power adapter via the APD input.  
Table 8-2. T2P and Allocated Power Truth Table, with APD Low  
NUMBER OF CLASS  
CYCLES  
PSE ALLOCATED  
POWER AT PD (W)  
PSE TYPE  
PD CLASS  
T2P(1)  
1-4  
1-4  
1-4  
1-4  
2
0
1
2
3
4
4
1
1
12.95  
3.84  
6.49  
12.95  
25.5  
25.5  
HIGH  
HIGH  
HIGH  
HIGH  
LOW  
LOW  
1
1
2
3-4  
2,3  
(1) If APD is high, both T2P and APDO outputs become low.  
During startup, the T2P output is enabled only once the DC-DC controller has reached steady-state, the soft-  
start having been completed. This output will return to a high-impedance state in any of the following cases:  
DC-DC controller is back to soft-start mode  
DC-DC controller transitions to soft-stop mode  
DC-DC controller shuts off due to reasons including VVCC falling below VCUVLO_F, or the PoE hotswap is in  
inrush limit while APD is low  
The device enters thermal shutdown  
Note that in all these cases, as long as VDD-to-VSS voltage remains above the mark reset threshold, the  
internal logic state of this signal is remembered such that this output will be activated accordingly after the soft-  
start has completed. This circuit resets when the VDD-to-VSS voltage drops below the mark reset threshold. The  
T2P can be left unconnected if not used.  
8.3.6 DC-DC Controller Features  
The TPS23731 device DC-DC controller implements a typical current-mode control as shown in Functional Block  
Diagram. Features include oscillator, overcurrent and PWM comparators, current-sense blanker, soft-start, soft-  
stop and gate driver. In addition, an internal current-compensation ramp generator, frequency synchronization  
logic, built-in frequency dithering functionality, thermal shutdown, and start-up current source with control are  
provided.  
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The TPS23731 is optimized for isolated converters, supporting the use of PSR (flyback configuration) and  
optocoupler feedback .  
To support PSR, the TPS23731 includes an internal error amplifier, and the voltage feedback is from the bias  
winding.  
If optocoupler feedback is used, the error amplifier is disabled (by use of EA_DIS input). In this case, the  
optocoupler output directly drives the COMP pin which serves as a current-demand control to the PWM.  
In both cases, the COMP signal is directly fed to a 5:1 internal resistor divider and an offset of VZDC/5 (~0.3 V)  
which defines a current-demand control for the pulse width modulator (PWM). A VCOMP below VZDC stops  
converter switching, while voltages above (VZDC + 5 × (VCSMAX + VSLOPE)) does not increase the requested peak  
current in the switching MOSFET.  
The internal start-up current source and control logic implement a bootstrap-type startup. The startup current  
source charges CVCC from VDD and maintain its voltage when the converter is disabled or during the soft-start  
period, while operational power must come from a converter (bias winding) output.  
The bootstrap source provides reliable start-up from widely varying input voltages, and eliminates the continual  
power loss of external resistors.  
The peak current limit does not have duty cycle dependency unless RS is used as shown in Figure 8-2 to  
increase slope compensation. This makes it easier to design the current limit to a fixed value.  
The DC-DC controller has an OTSD that can be triggered by heat sources including the VB regulator, GATE  
driver, bootstrap current source, and bias currents. The controller OTSD turns off VB, the switching FET, resets  
the soft-start generator, and forces the VCC control into an undervoltage state.  
8.3.6.1 VCC, VB, VBG and Advanced PWM Startup  
The VCC pin connects to the auxiliary bias supply for the DC-DC controller. The switching MOSFET gate driver  
draws current directly from the VCC pin. VB and VBG outputs are regulated down from VCC voltage, the former  
providing power to the internal control circuitry and external feedback optocoupler (when in use), and the latter  
providing power to the switching FET gate predriver circuit. A startup current source from VDD to VCC  
implements the converter bootstrap startup. VCC must receive power from an auxiliary source, such as an  
auxiliary winding on the flyback transformer, to sustain normal operation after startup.  
The startup current source is turned on during the inrush phase, charging CVCC and maintaining its voltage, and  
it is turned off only after the DC-DC soft-start cycle has been completed, which occurs when the DC-DC  
converter has ramped up its output voltage and VSST has exceed approximately 2.1 V (VSTUOF), as shown in  
Figure 8-1. Internal loading on VCC, VB and VBG is initially minimal while CVCC charges, to allow the converter  
to start. Due to the high current capability of the startup source, the recommended capacitance at VCC is  
relatively small, typically 1 μF in most applications.  
Once VVCC falls below its UVLO threshold (VCUVLO_F, approximately 6.1 V), the converter shuts off and the  
startup current source is turned back on, initiating a new PWM startup cycle.  
If however a VVCC fall (below approximately 7.1 V) is due to a light load condition causing temporary switching  
stop, the startup is immediately and for a short period turned back on to bring VCC voltage back up, with no  
converter interruption.  
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tinrush max  
PSE  
PD  
Operational Mode  
PSE Inrush  
tinrush min  
VCC Startup Source ON  
End of Soft-Start, Startup source  
turned off  
PD + Power Supply Fully  
Operational  
HSW cap  
recharge  
Soft Start  
Wait  
High current startup is ON for the whole soft-start  
cycle to allow low VCC capacitance  
Ensures interoperability with  
PSE inrush limit  
Figure 8-1. Advanced Startup  
Note that the startup current source is also turned on while in soft-stop mode.  
8.3.6.2 CS, Current Slope Compensation and blanking  
The current-sense input for the DC-DC converter should be connected to the high side of the current-sense  
resistor of the switching MOSFET. This voltage drives the current limit comparator and the PWM comparator  
(see Block Diagram of DC-DC controller). A leading-edge blanking circuit prevents MOSFET turn-on transients  
from falsely triggering either of these comparators. During the off time, and also during the blanking time that  
immediately follows, the CS pin is pulled to AGND through an internal pulldown resistor.  
The current limit comparator terminates the on-time portion of the switching cycle as soon as VCS exceeds  
approximately 250 mV (VCSMAX) and the leading edge blanking interval has expired. If the converter is not in  
current limit, then either the PWM comparator or the maximum duty cycle limiting (DMAX) circuit terminates the  
on time.  
Current-mode control requires addition of a compensation ramp to the sensed inductive (transformer or inductor)  
current for stability at duty cycles near and over 50%. The TPS23731 provides an internal slope compensation  
circuit which generates a current that imposes a voltage ramp at the positive input of the PWM comparator to  
suppress sub-harmonic oscillations. This current flows out of the CS pin. If desired, the magnitude of the slope  
compensation can be increased by the addition of an external resistor RS (see Figure 8-2) in series with the CS  
pin. It works with ramp current (IPK = ISL-EX, approximately 20 μA) that flows out of the CS pin when the MOSFET  
is on. The IPK specification does not include the approximately 2-μA fixed current that flows out of the CS pin.  
The TPS23731 has a maximum duty cycle limit of 78%, permitting the design of wide input-range converters with  
a lower voltage stress on the output rectifiers. While the maximum duty cycle is 78%, converters may be  
designed that run at duty cycles well below this for a narrower, 36-V to 57-V range.  
Most current-mode control papers and application notes define the slope compensation values in terms of  
VPP/TS (peak ramp voltage / switching period); however, Electrical Characteristics: DC-DC Controller Section  
specifies the slope peak (VSLOPE) based on the maximum duty cycle. Assuming that the desired slope, VSLOPE-D  
(in mV/period), is based on the full period, compute RS per Equation 1 where VSLOPE, DMAX, and ISL-EX are from  
Electrical Characteristics: DC-DC Controller Section with voltages in mV, current in μA, and the duty cycle is  
unitless (for example, DMAX = 0.78).  
VSLOPE (mV)  
:
;
BVSLOP E_D mV F @  
W
AC  
DMAX  
: ;  
RS 3 =  
× 1000  
ISL_EX (JA)  
(1)  
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GATE  
CS  
RS  
RCS  
CS  
Figure 8-2. Additional Slope Compensation  
The TPS23731 blanker timing is precise enough that the traditional R-C filters on CS can be eliminated. This  
avoids current-sense waveform distortion, which tends to get worse at light output loads. There may be some  
situations or designers that prefer an R-C approach, for example if the presence of RS causes increased noise,  
due to adjacent noisy signals, to appear at CS pin. The TPS23731 provides a pulldown on CS (~400 Ω) during  
the GATE OFF-time to improve sensing when an R-C filter must be used, by reducing cycle-to-cycle carry-over  
voltage on CS.  
Routing between the current-sense resistor and the CS pin should be short to minimize cross-talk from noisy  
traces such as the gate drive signal and the CP signal.  
8.3.6.3 COMP, FB, EA_DIS, CP, PSRS and Opto-less Feedback  
The TPS23731 DC-DC controller implements current-mode control as shown in Functional Block Diagram, using  
internal (via pins FB input and COMP output, with EA_DIS pulled low) or external (via COMP input, with EA_DIS  
open) voltage control loop error amplifier to define the input reference voltage of the current mode control  
comparator which determines the switching MOSFET peak current.  
VCOMP below VZDC causes the converter to stop switching. The maximum (peak) current is requested at  
approximately (VZDC + 5 × (VCSMAX + VSLOPE)). The AC gain from COMP to the PWM comparator is typically 0.2.  
In flyback applications and with the internal error amplifier enabled, the TPS23731 DC-DC controller can operate  
with feedback from an auxiliary winding of the flyback power transformer to achieve primary side regulation  
(PSR), eliminating the need for external shunt regulator and optocoupler. One noteworthy characteristic of this  
PSR is that it operates with continuous (DC) feedback, enabling better optimization of the power supply, and  
resulting in significantly lower noise sensitivity.  
When combined with secondary-side synchronous rectification (with PSRS open), the opto-less operation of the  
TPS23731 is achieved with a unique approach which basically consists in actively cancelling (through the use of  
CP output) the leading-edge voltage overshoot (causing the feedback capacitor to peak-charge) generated by  
the transformer winding. When combined with a correctly designed power transformer, less than ±1.5% load  
regulation (typical) over the full output current range becomes achievable in applications making use of  
secondary-side synchronous rectifiers. Operation is in continuous conduction mode (CCM), also enabling multi-  
output architectures.  
Opto-less operation of the TPS23731 also applies (with PSRS pulled low) to single-output flyback converter  
applications where a secondary-side diode rectifier is used. In typical 12-V output application and when  
combined with a correctly designed power transformer, ~±3% load regulation over a wide (< 5% to 100%) output  
current range can be achieved.  
In applications where the internal error amplifier is disabled, the COMP pin receives the control voltage typically  
from a TL431 or TLV431 shunt regulator driving an optocoupler, using VB pin as a pull up source, although other  
configurations are possible.  
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8.3.6.4 FRS Frequency Setting and Synchronization  
The FRS pin programs the (free-running) oscillator frequency, and may also be used to synchronize the  
TPS23731 converter to a higher frequency. The internal oscillator sets the maximum duty cycle and controls the  
current-compensation ramp circuit, making the ramp height independent of frequency. RFRS must be selected  
per Equation 2.  
15000  
RFRS (k3) =  
fSW (kHz)  
(2)  
The TPS23731 may be synchronized to an external clock to eliminate beat frequencies from a sampled system,  
or to place emission spectrum away from an RF input frequency. Synchronization may be accomplished by  
applying a short pulse ( > 25 ns) of magnitude VSYNC to FRS as shown in Figure 8-3. RFRS must be chosen so  
that the maximum free-running frequency is just below the desired synchronization frequency. The  
synchronization pulse terminates the potential ON-time period, and the OFF-time period does not begin until the  
pulse terminates. A short pulse is preferred to avoid reducing the potential ON-time.  
Figure 8-3 shows examples of nonisolated and transformer-coupled synchronization circuits. RT reduces noise  
susceptibility for the isolation transformer implementation. The FRS node must be protected from noise because  
it is high impedance.  
Synchronization  
Synchronization  
Pulse  
FRS  
Pulse  
FRS  
47pF  
47pF  
1000pF  
TSYNC  
VSYNC  
TSYNC  
1:1  
VSYNC  
Copyright © 2016, Texas Instruments Incorporated  
Figure 8-3. Synchronization  
8.3.6.5 DTHR and Frequency Dithering for Spread Spectrum Applications  
The international standard CISPR 22 (and adopted versions) is often used as a requirement for conducted  
emissions. Ethernet cables are covered as a telecommunication port under section 5.2 for conducted emissions.  
Meeting EMI requirements is often a challenge, with the lower limits of Class B being especially hard. Circuit  
board layout, filtering, and snubbing various nodes in the power circuit are the first layer of control techniques. A  
more detailed discussion of EMI control is presented in Practical Guidelines to Designing an EMI Compliant PoE  
Powered Device With Isolated Flyback, SLUA469. Additionally, IEEE 802.3at sections 33.3 and 33.4 and IEEE  
802.3bt sections 145.3 and 145.4 have requirements for noise injected onto the Ethernet cable based on  
compatibility with data transmission.  
A technique referred to as frequency dithering can also be used to provide additional EMI measurement  
reduction. The switching frequency is modulated to spread the narrowband individual harmonics across a wider  
bandwidth, thus lowering peak measurements.  
Fully programmable frequency dithering is a built-in feature of the TPS23731. The oscillator frequency can be  
dithered by connecting a capacitor from DTHR to RTN and a resistor from DTHR to FRS. An external capacitor,  
CDTR (Figure 9-1), is selected to define the modulation frequency fm. This capacitor is being continuously  
charged and discharged between slightly less than 0.5 V and slightly above 1.5 V by a current source/sink  
equivalent to ~3x the current through FRS pin. CDTR value is defined according to:  
3
W
RFRS (3)  
CDTR  
=
2.052 × fm (Hz)  
(3)  
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fm should always be higher than 9 kHz, which is the resolution bandwidth applied during conducted emission  
measurement. Typically, fm should be set to around 11 kHz to account for component variations.  
The resistor RDTR is used to determine ∆f, which is the amount of dithering, and its value is determined  
according to:  
0.513 × RFRS (3)  
RDTR (3) =  
%DTHR  
(4)  
For example, a 13.2% dithering with a nominal switching frequency of 250 kHz results in frequency variation of  
±33 kHz.  
8.3.6.6 SST and Soft-Start of the Switcher  
Converters require a soft-start to prevent output overshoot on startup. In PoE applications, the PD also needs  
soft-start to limit its input current at turn on below the limit allocated by the power source equipment (PSE).  
For flyback applications using primary-side control, the TPS23731 provides closed loop controlled soft-start,  
which applies a slowly rising ramp voltage to a second control input of the error amplifier. The lower of the  
reference input and soft-start ramp controls the error amplifier, allowing the output voltage to rise in a smooth  
monotonic fashion.  
In all other applications where secondary-side regulation is used, the TPS23731 provides a current-loop soft-  
start, which controls the switching MOSFET peak current by applying a slowly rising ramp voltage to a second  
PWM control input. The lower of COMP-derived current demand and soft-start ramp controls the PWM  
comparator. Note that in this case there is usually a (slower) secondary-side soft-start implemented with the  
typical TL431 or TLV431 error amplifier to complement the action of the primary-side soft-start.  
The soft-start period of the TPS23731 is adjustable with a capacitor between SST and RTN. During soft-start,  
CSST (Figure 9-1) is being charged from less than 0.2 V to 2.45 V by a ~10µA current source. Once VSST has  
exceeded approximately 2.1 V (VSTUOF), the VCC startup is also turned off.  
The actual control range of the primary-side closed-loop soft-start capacitor voltage is between 0.25V and 2V  
nominally. Therefore, the soft-start capacitor value must be based on this control range and the required soft-  
start period (tSS) according to:  
:
;
ISSC JA x tSS (ms)  
CSS (nF) =  
(2 F 0.25)  
(5)  
The actual control range of the current-loop soft-start capacitor voltage is between 0.6V and 1.2V nominally.  
Therefore, the soft-start capacitor value must be based on this control range and the required soft-start period  
(tSS) according to:  
:
;
ISSC JA x tSS (ms)  
CSS (nF) =  
(1.2 F 0.6)  
(6)  
Note that the VCC startup turns off only when 2.1 V is reached, allowing additional time for the secondary-side  
soft-start to complete. For more details regarding the secondary-side soft start, refer to Application Information.  
8.3.6.7 SST, I_STP, LINEUV and Soft-Stop of the Switcher  
The soft-stop feature is provided by the TPS23731 to minimizes stress on switching power components caused  
by power shutdown, allowing FET BOM cost reduction. Soft-stop action consists in discharging in a controlled  
way the output capacitor of the converter, sending back the energy to the input bulk capacitor.  
Once the LINEUV input detects that the input power source has been removed (while APD is also low), the SST  
capacitor is discharged with a constant current, ramping down the switching MOSFET peak current. The SST  
discharge current (ISSD_SP) is defined with RI_STP according to:  
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1000  
ISSD_SP (JA) =  
:
RI_STP kÀ  
;
(7)  
To accelerate the impact of the soft-stop, the internal peak current limit threshold is also immediately stepped  
down to approximately 50 mV at beginning of soft-stop.  
8.3.7 Switching FET Driver - GATE  
GATE is the gate drive outputs for the DC-DC converter's main switching MOSFET.  
GATE's phase turns the main switch on when it transitions high, and off when it transitions low. It is also held low  
when the converter is disabled.  
8.3.8 EMPS and Automatic MPS  
To maintain PSE power in situation of very low IRTN condition, the TPS23731 generates a pulsed current through  
VSS pin with an amplitude adjusted such that its net current reaches a level high enough to maintain power.  
The pulsed current amplitude (IMPSL, IMPSH) and duration (tMPSL, tMPSH) are automatically selected according to  
PSE Type (1-2, 3-4), to maintain PSE power while minimizing power consumption. Auto-stretch feature is also  
used to cancel the impact of system conditions (bulk capacitance and PoE cable impedance) on the effective  
pulsed current duration. See Figure 8-4, where the illustrated pulsed current is coming out of the VSS pin, while  
ILOAD is the DC current going into the RTN pin.  
TMPS  
Pulse  
Stretching  
IEEE IHold  
ILoad  
0 mA  
IEEE IHold  
TMPS  
Unloaded power  
supply  
Measured IVSS  
Stretches the pulse if necessary based on measured current  
Adds only the extra current to reach IHold  
Figure 8-4. Auto MPS  
Note that prior to entering the MPS mode, a light load condition is detected on RTN pin with a deglitch time  
period of approximately 5 ms.  
8.3.9 VDD Supply Voltage  
VDD connects to the positive side of the input supply. It provides operating power to the PD controller, allows  
monitoring of the input line voltage and serves as the source of DC-DC converter startup current. If VVDD falls  
below its UVLO threshold and goes back above it, or if a thermal shutdown resumes even if VVDD remains above  
its UVLO threshold, the TPS23731 returns to inrush phase.  
8.3.10 RTN, AGND, GND  
RTN is internally connected to the drain of the PoE hotswap MOSFET, while AGND is the quiet analog reference  
for the DC-DC controller return. GND is the power ground used by the flyback power FET gate driver and CP  
output, and should be tied to AGND and RTN plane. The AGND / GND / RTN net should be treated as a local  
reference plane (ground plane) for the DC-DC control and converter primary. The PAD_G exposed thermal pad  
is internally connected to RTN pin.  
8.3.11 VSS  
VSS is the PoE input-power return side. It is the reference for the PoE interface circuits, and has a current-  
limited hotswap switch that connects it to RTN. VSS is clamped to a diode drop above RTN by the hotswap  
switch. The PAD_S exposed thermal pad is internally connected to VSS pin. This pad must be connected to VSS  
pin to ensure proper operation.  
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8.3.12 Exposed Thermal pads - PAD_G and PAD_S  
PAD_G should be tied to a large RTN copper area on the PCB to provide a low resistance thermal path to the  
circuit board.  
PAD_S should be tied to a large VSS copper area on the PCB to provide a low resistance thermal path to the  
circuit board. TI recommends maintaining a clearance of 0.025” between VSS and high-voltage signals such as  
VDD.  
8.4 Device Functional Modes  
8.4.1 PoE Overview  
The following text is intended as an aid in understanding the operation of the TPS23731, but it is not a substitute  
for the actual IEEE 802.3bt or 802.3at standards. The IEEE 802.3bt standard is an update to IEEE 802.3-2018,  
adding Clause 145 (PoE), including power delivery using all four pairs, high-power options, additional features to  
reduce standby power consumption and enhanced classification.  
Generally speaking, a device compliant to IEEE 802.3-2012 is referred to as a Type 1 (Class 0-3) or 2 (Class 4)  
device, and devices with higher power and enhanced classification is referred to as Type 3 (Class 5, 6) or 4  
(Class 7, 8) devices. Type 3 devices will also include Class 0-4 devices that are 4-pair capable. Standards  
change and must always be referenced when making design decisions.  
The IEEE 802.3at and 802.3bt standards define a method of safely powering a PD (powered device) over a  
cable by power sourcing equipment (PSE), and then removing power if a PD is disconnected. The process  
proceeds through an idle state and three operational states of detection, classification, and operation. There is  
also a fourth operational state used by Type 3 and 4 PSEs, called "connection check", to determine if the PD has  
same (single interface) or independent (dual interface or commonly referred to "dual-signature" in the  
IEEE802.3bt standard) classification signature on each pairset. The PSE leaves the cable unpowered (idle state)  
while it periodically looks to see if something has been plugged in; this is referred to as detection. The low power  
levels used during detection and connection check are unlikely to damage devices not designed for PoE. If a  
valid PD signature is present, the PSE may inquire how much power the PD requires; this is referred to as  
classification. The PSE may then power the PD if it has adequate capacity.  
Type 3 or Type 4 PSEs are required to do an enhanced hardware classification of Type 3 or 4 respectively. Type  
2 PSEs are required to do Type 1 hardware classification plus a data-layer classification, or an enhanced Type 2  
hardware classification. Type 1 PSEs are not required to do hardware or data link layer (DLL) classification. A  
Type 3 or Type 4 PD must do respectively Type 3 or Type 4 hardware classification as well as DLL classification.  
A Type 2 PD must do Type 2 hardware classification as well as DLL classification. The PD may return the  
default, 13-W current-encoded class, or one of four other choices if Type 2, one of six other choices if Type 3,  
and one of eight other choices if Type 4. DLL classification occurs after power-on and the Ethernet data link has  
been established  
Once started, the PD must present the maintain power signature (MPS) to assure the PSE that it is still present.  
The PSE monitors its output for a valid MPS, and turns the port off if it loses the MPS. Loss of the MPS returns  
the PSE to the idle state. Figure 8-5 shows the operational states as a function of PD input voltage.  
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Shut-  
down  
Detect  
Classify  
Normal Operation  
42.5  
6.9  
0
2.7  
10.1 14.5  
Mark  
20.5  
30  
57  
PI Voltage (V)  
37  
42  
Normal Operation  
Figure 8-5. Operational States  
The PD input, typically an RJ-45 eight-lead connector, is referred to as the power interface (PI). PD input  
requirements differ from PSE output requirements to account for voltage drops and operating margin. The  
standard allots the maximum loss to the cable regardless of the actual installation to simplify implementation.  
IEEE 802.3-2008 was designed to run over infrastructure including ISO/IEC 11801 class C (CAT3 per TIA/  
EIA-568) that may have had AWG 26 conductors. IEEE 802.3at Type 2 and IEEE 802.3bt Type 3 cabling power  
loss allotments and voltage drops have been adjusted for 12.5-Ω power loops per ISO/IEC11801 class D (CAT5  
or higher per TIA/EIA-568, typically AWG 24 conductors). Table 8-3 shows key operational limits broken out for  
the two revisions of the standard.  
Table 8-3. Comparison of Operational Limits  
POWER LOOP  
RESISTANCE  
(MAX)  
STATIC PD INPUT VOLTAGE  
PSE OUTPUT  
POWER (MIN)  
PSE STATIC OUTPUT  
VOLTAGE (MIN)  
PD INPUT  
POWER (MAX)  
STANDARD  
POWER ≤ 13 W  
POWER > 13 W  
IEEE802.3-2012  
802.3at (Type 1)  
20 Ω  
44 V  
15.4 W  
30 W  
13 W  
37 V – 57 V  
37 V – 57 V  
N/A  
802.3bt (Type 3)  
12.5 Ω  
12.5 Ω  
50 V  
50 V  
802.3at (Type 2)  
802.3bt (Type 3)  
25.5 W  
42.5 V – 57 V  
802.3bt (Type 3)  
802.3bt (Type 4)  
6.25 Ω (4-pair)  
6.25 Ω (4-pair)  
60 W  
90 W  
50 V  
52 V  
51 W  
N/A  
N/A  
42.5 V - 57 V  
41.2 V - 57 V  
71.3 W  
The PSE can apply voltage either between the RX and TX pairs (pins 1–2 and 3–6 for 10baseT or 100baseT), or  
between the two spare pairs (4–5 and 7–8). Power application to the same pin combinations in 1000/2.5G/5G/  
10GbaseT systems is recognized in IEEE 802.3bt. 1000/2.5G/5G/10GbaseT systems can handle data on all  
pairs, eliminating the spare pair terminology. Type 1 and 2 PSEs are allowed to apply voltage to only one set of  
pairs at a time, while Type 3 and 4 PSEs may apply power to one or both sets of pairs at a time. The PD uses  
input diode or active bridges to accept power from any of the possible PSE configurations. The voltage drops  
associated with the input bridges create a difference between the standard limits at the PI and the TPS23731  
specifications.  
A compliant Type 2, 3 or 4 PD has power management requirements not present with a Type 1 PD. These  
requirements include the following:  
1. Must interpret respectively Type 2, 3 or 4 hardware classification.  
2. Must present hardware Class 4 during the first two classfication events, applicable to Type 2 and 4 PDs, as  
well as to Type 3 PD with Class level 4 or higher.  
3. If Type 3 Class 5-6 or Type 4 single interface PD, it must present hardware Class in the range of 0 to 3 during  
the third and any subsequent classification events.  
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4. Must implement DLL negotiation.  
5. Must draw less than 400 mA from 50 ms until 80 ms after the PSE applies operation voltage (power up), if  
Type 2 or 3, single interface PD. This covers the PSE inrush period, which is 75 ms maximum.  
6. Must draw less than 800 mA total and 600 mA per pairset from 50 ms until 80 ms after the PSE applies  
operation voltage (power up), if Type 4 (Class 7-8) single interface PD.  
7. Must not draw more than 60 mA and 5 mA any time the input voltage falls below respectively 30 V and 10 V.  
8. Must not draw more than 13 W if it has not received at least a Type 2 hardware classification or received  
permission through DLL.  
9. Must not draw more than 25.5 W if it has not received at least 4 classification events or received permission  
through DLL.  
10.Must not draw more than 51 W if it has not received at least 5 classification events or received permission  
through DLL.  
11.Must meet various operating and transient templates.  
12.Optionally monitor for the presence or absence of an adapter.  
As a result of these requirements, the PD must be able to dynamically control its loading, and monitor T2P for  
changes. APDO can also be used in cases where the design needs to know specifically if an adapter is plugged  
in and operational.  
8.4.2 Threshold Voltages  
The TPS23731 has a number of internal comparators with hysteresis for stable switching between the various  
states as shown in Figure 8-5. Figure 8-6 relates the parameters in Electrical Characteristics PoE to the PoE  
states. The mode labeled idle between classification and operation implies that the DEN, CLS, and RTN pins are  
all high impedance. The state labeled Mark, which is drawn in dashed lines, is part of the Type 2-3-4 hardware  
class state machine.  
PD Powered  
Idle  
Classification  
Mark  
VDD-VSS  
Detection  
VCU_H  
VCU_OFF  
VCL_H  
VCL_ON  
VUVLO_H  
VMSR  
VUVLO_R  
Note: Variable names refer to Electrical Characteristic  
Table parameters  
Figure 8-6. Threshold Voltages  
8.4.3 PoE Start-Up Sequence  
The waveforms of Figure 8-7 demonstrate detection, classification, and start-up from a Type 2 PSE with Class 4  
hardware classification. The key waveforms shown are VVDD-VSS, VRTN-VSS, and IPI. IEEE802.3bt and IEEE  
802.3at require a minimum of two detection levels; however, four levels are shown in this example. Four levels  
guard against misdetection of a device when plugged in during the detection sequence.  
VRTN to VSS falls as the TPS23731 charges CBULK following application of full voltage. In Figure 8-9, the  
converter soft-start is also delayed until the end of inrush period.  
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DC-DC enabled after  
Startup delay  
Inrush  
IPI  
VVDD-VSS  
Class Mark  
Detect  
VRTN-VSS  
Time: 50ms/div  
Figure 8-7. PoE Start-Up Sequence  
8.4.4 Detection  
The TPS23731 is in detection mode whenever VVDD-V SS is below the lower classification threshold. When the  
input voltage rises above VCL_ON, the DEN pin goes to an open-drain condition to conserve power. While in  
detection, RTN is high impedance, almost all the internal circuits are disabled, and the DEN pin is pulled to VSS  
.
An RDEN of 25.5 kΩ (1%), presents the correct signature. It may be a small, low-power resistor because it only  
sees a stress of about 5 mW. A valid PD detection signature is an incremental resistance between 23.75 kΩ and  
26.25 kΩ at the PI.  
The detection resistance seen by the PSE at the PI is the result of the input bridge resistance in series with the  
parallel combination of RDEN and the TPS23731 bias loading. The incremental resistance of the input diode  
bridge may be hundreds of ohms at the very low currents drawn when 2.7 V is applied to the PI. The input bridge  
resistance is partially cancelled by the effective resistance of the TPS23731 during detection.  
8.4.5 Hardware Classification  
Hardware classification allows a PSE to determine a PD’s power requirements before powering, and helps with  
power management once power is applied. Type 2, 3, and 4 hardware classification permits high power PDs to  
determine whether the PSE can support its high-power operation. The number of class cycles generated by the  
PSE prior to turn on indicates to the PD if it allots the power requested or if the allocated power is less than  
requested, in which case there is power demotion.  
A Type 2 PD always presents Class 4 in hardware to indicate that it is a 25.5W device. A Class 5 or 6 Type 3 PD  
presents Class 4 in hardware during the first two class events and it presents Class 0 or 1, respectively, for all  
subsequent class events. A Class 7 or 8 Type 4 PD presents Class 4 in hardware during the first two class  
events and it presents Class 2 or 3, respectively, for all subsequent class events. A Type 1 PSE will treat a Class  
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4 to 8 device like a Class 0 device, allotting 13 W if it chooses to power the PD. A Type 2 PSE will treat a Class 5  
to 8 device like a Class 4 device, allotting 25.5W if it chooses to power the PD. A Class 4 PD that receives a 2-  
event class, a Class 5 or 6 PD that receives a 4-event class, or a Class 7 or 8 PD that receives a 5-event class,  
understands that the PSE has agreed to allocate the PD requested power. In the case where there is power  
demotion, the PD may choose to not start, or to start while not drawing more power than initially allocated, and  
request more power through the DLL after startup. The standard requires a Type 2, 3 or 4 PD to indicate that it is  
underpowered if this occurs. Startup of a high-power PD at lower power than requested implicitly requires some  
form of powering down sections of the application circuits.  
The maximum power entries in Table 8-1 determine the class the PD must advertise. The PSE may disconnect a  
PD if it draws more than its stated class power, which may be the hardware class or a DLL-derived power level.  
The standard permits the PD to draw limited current peaks that increase the instantaneous power above the  
Table 8-1 limit; however, the average power requirement always applies.  
The TPS23731 implements one- to two-event classification. RCLS resistor value defines the class of the PD. DLL  
communication is implemented by the Ethernet communication system in the PD and is not implemented by the  
TPS23731.  
The TPS23731 disables classification above VCU_OFF to avoid excessive power dissipation. CLS voltage is  
turned off during PD thermal limiting or when APD or DEN is active. The CLS output is inherently current-limited,  
but should not be shorted to VSS for long periods of time.  
Figure 8-8 shows how classification works for the TPS23731. Transition from state-to-state occurs when  
comparator thresholds are crossed (see Figure 8-5 and Figure 8-6). These comparators have hysteresis, which  
adds inherent memory to the machine. Operation begins at idle (unpowered by PSE) and proceeds with  
increasing voltage from left to right. A 2-event classification follows the (heavy lined) path towards the bottom,  
ending up with a low T2P along the lower branch that is highlighted. Once the valid path to the PSE detection is  
broken, the input voltage must transition below the mark reset threshold to start anew.  
Between  
Ranges  
UVLO  
Falling  
Class  
Class  
Class  
UVLO  
Rising  
Operating  
T2P  
open-drain  
Between  
Ranges  
Idle  
Detect  
TYPE 1 or 3 PSE  
Hardware Class  
Mark  
Reset  
Between  
Ranges  
Mark  
Mark  
PoE Startup Sequence  
Between  
Ranges  
UVLO  
Rising  
Operating  
T2P low  
Class  
TYPE 2 or 3 PSE  
Hardware Class  
UVLO  
Falling  
Figure 8-8. Up to Two-Event Class Internal States  
8.4.6 Maintain Power Signature (MPS)  
The MPS is an electrical signature presented by the PD to assure the PSE that it is still present after operating  
voltage is applied. For a Type 1 or Type 2 PD, a valid MPS consists of a minimum dc current of 10 mA, or a 10-  
mA pulsed current for at least 75 ms every 325 ms, and an AC impedance lower than 26.3 kΩ in parallel with  
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0.05 μF. Only Type 1 and Type 2 PSEs monitor the AC MPS. A Type 1 or Type 2 PSE that monitors only the AC  
MPS may remove power from the PD.  
To enable applications with stringent standby requirements, IEEE802.3bt introduced a significant change  
regarding the minimum pulsed current duration to assure the PSE will maintain power. This applies to all Type 3  
and Type 4 PSEs, and the pulse duration is ~10% of what is required for Type 1 and 2 PSEs. The MPS current  
amplitude requirement for Class 5-8 PDs have also increased to 16 mA at the PSE end of the ethernet cable.  
If the current through the RTN-to-VSS path is very low, the TPS23731 automatically generates the MPS pulsed  
current through the VSS pin, with an amplitude adjusted such that its net current reaches a level high enough to  
maintain PSE power. The TPS23731 is also able to determine if the PSE is of Type 1-2 or Type 3-4,  
automatically adjusting the pulsed current amplitude, duration and duty-cycle, while minimizing power  
consumption. Note that the IEEE802.3bt requirement for the PD is applicable at the PSE end of the cable. That  
means that depending the cable length and other parameters including the bulk capacitance, a longer pulse  
duration may be required to ensure a valid MPS. For that purpose, the TPS23731 provides auto-stretch  
capability which is used to cancel the impact of such system conditions on the effective pulsed current duration.  
See Figure 8-4.  
When APD is pulled high or when DEN is pulled to VSS (forcing the hotswap switch off), the DC MPS will not be  
met. A PSE that monitors the DC MPS will remove power from the PD when this occurs.  
8.4.7 Advanced Start-Up and Converter Operation  
The internal PoE undervoltage lockout (UVLO) circuit holds the hotswap switch off before the PSE provides full  
voltage to the PD. This prevents the converter circuits from loading the PoE input during detection and  
classification. The converter circuits discharges CBULK, CVCC, CVB and CVBG while the PD is unpowered. Thus  
VVDD-RTN will be a small voltage until just after full voltage is applied to the PD, as seen in Figure 8-7.  
The PSE drives the PI voltage to the operating range once it has decided to power up the PD. When VVDD rises  
above the UVLO turnon threshold (VUVLO-R, approximately 37.6 V) with RTN high, the TPS23731 enables the  
hotswap MOSFET with an approximately 140-mA (inrush) current limit. See the waveforms of Figure 8-9 for an  
example. Converter switching is disabled while CBULK charges and VRTN falls from VVDD to nearly VVSS  
;
however, the converter start-up circuit is allowed to charge CVCC (the VB regulator also powers the internal  
converter circuits as VVCC rises). Once the inrush current falls about 10% below the inrush current limit, the PD  
current limit switches to the operational level (approximately 925 mA). Additionally, once the inrush period  
duration has also exceeded approximately 84 ms (end of inrush phase), the converter switching is allowed to  
start, once VVCC also goes above its UVLO (approximately 8.25 V).  
Continuing the start-up sequence shown in Figure 8-9, once VVCC goes above its UVLO , the soft-start (SST)  
capacitor is first discharged with controlled current (ISSD) below nominally 0.2 V (VSFST) if the discharge was not  
already completed, then it is gradually recharged until it reaches ~0.25 V (VSSOFS in closed-loop mode) at which  
point the converter switching is enabled, following the closed loop controlled soft-start sequence. Note that the  
startup current source capability is such that it can fully maintain VVCC during the converter soft-start without  
requiring any significant CVCC capacitance, in 48 V input applications. At the end of the soft-start period, more  
specifically when SST voltage has exceeded ~2 V (VSTUOF), the startup current source is turned off. VVCC falls  
as it powers the internal circuits including the switching MOSFET gate. If the converter control-bias output rises  
to support VVCC before it falls to VCUVLO_F (~6.1 V), a successful start-up occurs. Figure 8-9 shows a small droop  
in VVCC while the output voltage rises smoothly and a successful start-up occurs.  
Figure 8-10 also illustrates similar scenario if optocoupler feedback is used instead of PSR. In this case, the  
converter switching is enabled when VSST exceeds approximately 0.6 V (VSSOFS in peak current mode).  
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50V/div  
VVDD-RTN  
Converter  
starts  
PI powered  
Inrush  
100mA/div  
IPI  
VVCC-RTN  
Startup turn off,  
T2P enabled  
5V/div  
5V/div  
VOUT  
Output Voltage  
Inrush Delay  
VSST  
Soft Start  
1V/div  
Time: 20ms/div  
Figure 8-9. Power Up and Start - Flyback with PSR  
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50V/div  
VVDD-RTN  
Converter  
starts  
PI powered  
Inrush  
100mA/div  
IPI  
VVCC-RTN  
Startup turn off  
5V/div  
5V/div  
Secondary  
Soft Start  
dependent  
Output Voltage  
VOUT  
Inrush Delay  
Primary Ipeak  
Soft Start  
VSST  
1V/div  
Time: 20ms/div  
Figure 8-10. Power Up and Start - with Opto Feedback  
The converter shuts off when VVCC falls below its lower UVLO. This can happen when power is removed from  
the PD, or during a fault on a converter output rail. When one output is shorted, all the output voltages fall  
including the one that powers VCC. The control circuit discharges VCC until it hits the lower UVLO and turns off.  
A restart initiates if the converter turns off and there is sufficient VDD voltage. This type of operation is  
sometimes referred to as hiccup mode, which when combined with the soft-start provides robust output short  
protection by providing time-average heating reduction of the output rectifier.  
Figure 8-11 illustrates the situation when there is severe overload at the main output which causes VCC hiccup.  
After VCC went below its UVLO due to the overload, the startup source is turned back on. Then, a new soft-start  
cycle is reinitiated, the soft-start capacitor being first discharged with controlled current, introducing a short  
pause before the output voltage is ramped up.  
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VOUT overload  
Converter  
Turn off then restart  
IPI  
200mA/div  
5V/div  
Startup turn off  
VVCC-RTN  
VCC  
UVLO  
VSST  
Soft Start  
1V/div  
5V/div  
Output Voltage  
VOUT  
Time: 10ms/div  
Figure 8-11. Restart Following Severe Overload at Main Output of PSR Flyback DC-DC Converter  
Also, when a VCC fall occurs, the TPS23731 can differentiate between an overload and a light load condition.  
For example a diode-rectified flyback with optocoupled feedback may have its VCC rail to fall in situation of light  
load due to temporary switching stop. In this case, the output voltage has to be maintained and a soft-start would  
not be acceptable. To address this case, if VVCC falls below approximately 7.1 V due to light load, the TPS23731  
turns back on the startup immediately and for a short period of time to bring VCC voltage back up, and there is  
no soft-start recycling.  
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IOUT  
VVCC-RTN  
Startup turn on then off  
VCUV  
Startup turn on  
for short time  
5V/div  
VCC falls due to  
switching interruption  
at light load  
Vout is maintained, no soft  
start recycling  
VOUT  
10V/div  
Time: 10ms/div  
Figure 8-12. Startup Operation if VCC Undervoltage is caused by Light Load Condition of Diode-rectified  
Flyback DC-DC Converter  
If VVDD-VSS drops below the lower PoE UVLO (VUVLO_F, approximately 32 V), the hotswap MOSFET is turned off,  
but the converter still runs (unless LINEUV input is pulled low). The converter stops if VVCC falls below the  
VCUVLO_F (~6.1 V), the hotswap is in inrush current limit, the SST pin is pulled to ground, or the converter is in  
thermal shutdown.  
8.4.8 Line Undervoltage Protection and Converter Operation  
When the input power source is removed, there are circumstances where stress may occur on the power  
components.  
For example, situations where the output voltage capacitor may be able to back drive its secondary-side sync  
MOSFET after the flyback converter switching has stopped completely, either temporarily or not. Such situation  
could apply at power down or next soft-start.  
To address this case, once the LINEUV voltage falls below VLIUVF, the TPS23731 transitions to soft-stop mode. It  
turns on temporarily the startup to maintain VVCC, then uses the SST control to ramp down the switching  
MOSFET peak current. As a result, the converter output is discharged in a controlled way, the energy of the  
output capacitor being sent back to the input bulk capacitor. Also note that at beginning of soft-stop, the  
TPS23731 temporarily forces the peak current to a low value (VCS maximum at approximately 50 mV), until SST  
voltage becomes low enough to decrease it further. This advanced feature allows the soft-stop to immediately  
start discharging the output capacitor, regardless of the output load level, minimizing any system tradeoffs for  
optimum switching MOSFETs protection. See Figure 8-13.  
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Power  
down  
VDD  
LINEUV  
Soft Stop begins  
immediately at max  
discharge current  
VOUT  
SST  
CS  
Figure 8-13. Soft-Stop Operation  
Once the soft-stop operation has been completed and to avoid subsequent oscillations caused by the impact of  
the energy transfer on the LINEUV voltage, an internal load (~7 mA) is applied on VDD for approximately 160  
ms, before the converter is allowed to restart.  
8.4.9 PD Self-Protection  
IEEE802.3bt includes new PSE output limiting requirements for Type 3 and 4 operation to cover higher power  
and 4-pair applications. Type 2, 3 and 4 PSEs must meet an output current vs time template with specified  
minimum and maximum sourcing boundaries. The peak output current per each 2-pair may be as high as 50 A  
for 10 μs or 1.75 A for 75 ms, and the total peak current becomes twice these values when power is delivered  
over 4 pairs. This makes robust protection of the PD device even more important than it was in IEEE  
802.3-2012.  
The PD section has the following self-protection functions.  
Hotswap switch current limit  
Hotswap switch foldback  
Hotswap thermal protection  
The internal hotswap MOSFET of the TPS23731 is protected against output faults and input voltage steps with a  
current limit and deglitched foldback. High stress conditions include converter output shorts, shorts from VDD to  
RTN, or transients on the input line. An overload on the pass MOSFET engages the current limit, with VRTN-VSS  
rising as a result. If VRTN rises above approximately 14.8 V for longer than approximately 1.8 ms, the current limit  
reverts to the inrush limit, and turns the converter off, although there is no minimum inrush delay period (84 ms)  
applicable in this case. The 1.8-ms deglitch feature prevents momentary transients from causing a PD reset,  
provided that recovery lies within the bounds of the hotswap and PSE protection. Figure 8-14 shows an example  
of recovery from a 15-V PSE rising voltage step. The hotswap MOSFET goes into current limit, overshooting to a  
relatively low current, recovers to 925-mA full current limit, and charges the input capacitor while the converter  
continues to run. The MOSFET did not go into foldback because VRTN-VSS was below 14.8 V after the 1.8-ms  
deglitch.  
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IPI  
250mA/div  
CBULK  
completes charge  
while converter  
operates  
VVSS-RTN -15V  
10V/div  
20V/div  
VVDD-VSS  
Time: 400us/div  
Figure 8-14. Response to PSE Step Voltage  
The PD control has a thermal sensor that protects the internal hotswap MOSFET. Conditions like start-up or  
operation into a VDD to RTN short cause high power dissipation in the MOSFET. An overtemperature shutdown  
(OTSD) turns off the hotswap MOSFET and class regulator, which are restarted after the device cools. The PD  
restarts in inrush phase when exiting from a PD overtemperature event.  
Pulling DEN to VSS during powered operation causes the internal hotswap MOSFET to turn off. This feature  
allows a PD with secondary-side adapter ORing to achieve adapter priority. Take care with synchronous  
converter topologies that can deliver power in both directions.  
The hotswap switch is forced off under the following conditions:  
VAPD above VAPDEN (approximately 1.5 V)  
VDE N ≤ VPD_DIS when VVDD-VSS is in the operational range  
PD over temperature  
VVDD-VSS < PoE UVLO (approximately 32 V)  
8.4.10 Thermal Shutdown - DC-DC Controller  
The DC-DC controller has an OTSD that can be triggered by heat sources including the VB and VBG regulators,  
GATE driver, startup current source, and bias currents. The controller OTSD turns off VB, VBG, the GATE driver,  
and forces the VCC control into an under-voltage state.  
8.4.11 Adapter ORing  
Many PoE-capable devices are designed to operate from either a wall adapter or PoE power. A local power  
solution adds cost and complexity, but allows a product to be used if PoE is not available in a particular  
installation. While most applications only require that the PD operate when both sources are present, the  
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TPS23731 device supports forced operation from either of the power sources. Figure 8-15 illustrates three  
options for diode ORing external power into a PD. Only one option would be used in any particular design.  
Option 1 applies power to the device input, option 2 applies power between the device PoE section and the  
power circuit, and option 3 applies power to the output side of the converter. Each of these options has  
advantages and disadvantages. A detailed discussion of the device and ORing solutions is covered in  
application note Advanced Adapter ORing Solutions using the TPS23753, (SLVA306).  
Low Voltage  
Output  
DEN  
CLS  
Power  
Circuit  
VSS  
RTN  
Adapter  
Option 2  
Adapter  
Option 3  
Adapter  
Option 1  
Figure 8-15. ORing Configurations  
Preference of one power source presents a number of challenges. Combinations of adapter output voltage  
(nominal and tolerance), power insertion point, and which source is preferred determine solution complexity.  
Several factors contributing to the complexity are the natural high-voltage selection of diode ORing (the simplest  
method of combining sources), the current limit implicit in the PSE, PD inrush, and protection circuits (necessary  
for operation and reliability). Creating simple and seamless solutions is difficult if not impossible for many of the  
combinations. However, the TPS23731 device offers several built-in features that simplify some combinations.  
Several examples demonstrate the limitations inherent in ORing solutions. Diode ORing a 48-V adapter with PoE  
(option 1) presents the problem that either source may have the higher voltage. A blocking switch would be  
required to assure that one source dominates. A second example is combining a 12-V adapter with PoE using  
option 2. The converter draws approximately four times the current at 12 V from the adapter than it does from  
PoE at 48 V. Transition from adapter power to PoE may demand more current than can be supplied by the PSE.  
The converter must be turned off while CIN capacitance charges, with a subsequent converter restart at the  
higher voltage and lower input current. A third example is use of a 24-V adapter with ORing option 1. The PD  
hotswap would have to handle two times the current, and have 1/4 the resistance (be 4 times larger) to dissipate  
equal power.  
The most popular preferential ORing scheme is option 2 with adapter priority. The hotswap MOSFET is disabled  
when the adapter is used to pull APD high, blocking the PoE source from powering the output. This solution  
works well with a wide range of adapter voltages, is simple, and requires few external parts. When the AC power  
fails, or the adapter is removed, the hotswap switch is enabled. In the simplest implementation, the PD  
momentarily loses power until the PSE completes its start-up cycle.  
The DEN pin can be used to disable the PoE input when ORing with option 3. This is an adapter priority  
implementation. Pulling DEN low, while creating an invalid detection signature, disables the hotswap MOSFET,  
and prevents the PD from redetecting. This would typically be accomplished with an optocoupler that is driven  
from the secondary side of the converter. Another option 3 alternative which does not require DEN optocoupler is  
achievable by ensuring that the auxiliary voltage is always higher then the converter output; in this case, the  
PSE power can then be maintained by use of the auto MPS function of the TPS23731.  
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The IEEE standards require that the PI conductors be electrically isolated from ground and all other system  
potentials not part of the PI interface. The adapter must meet a minimum 1500-Vac dielectric withstand test  
between the output and all other connections for options 1 and 2. The adapter only needs this isolation for option  
3 if it is not provided by the converter.  
Adapter ORing diodes are shown for all the options to protect against a reverse-voltage adapter, a short on the  
adapter input pins, and damage to a low-voltage adapter. ORing is sometimes accomplished with a MOSFET in  
option 3.  
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9 Application and Implementation  
Note  
Information in the following applications sections is not part of the TI component specification, and TI  
does not warrant its accuracy or completeness. TI’s customers are responsible for determining  
suitability of components for their purposes. Customers should validate and test their design  
implementation to confirm system functionality.  
9.1 Application Information  
The TPS23731 supports power supply topologies that require a single PWM gate drive with current-mode  
control. Figure 9-1 provides an example of a synchronous FET rectified primary-side-regulated flyback converter.  
9.2 Typical Application  
T1  
TPS23731  
VCC  
+
RCL  
CCL  
DCL  
CBULK  
VDD  
DEN  
VOUT2  
COUT2  
RDEN  
APDO  
T2P  
GATE  
CS  
0.1 F  
58V  
CLS  
VSS  
RCS  
VOUT1  
COUT  
VCC  
COMP  
DCC  
CCOMP  
RCOMP  
I_in  
R1  
APD  
CVCC  
FB  
CCC2  
LINEUV  
FRS  
RUV2  
DA  
CP  
R2  
SST  
CSST  
RDTR  
EA_DIS  
DTHR  
VB  
GND I_STP  
RTN  
PSRS  
CVB  
RAPD2  
CDTR  
RFRS  
48V  
Adapter  
RI_STP  
Figure 9-1. Basic TPS23731 Implementation  
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9.2.1 Design Requirements  
Selecting a converter topology along with a converter design procedure is beyond the scope of this application  
section.  
The TPS23731 has the flexibility to be used in high power density flyback topologies such as primary side  
regulation synchronous or non-synchronous flyback.  
Examples to help in programming the TPS23731 and additional design consideration are shown in Detailed  
Design Procedure. For a more specific converter design example, refer to the EVM that is designed for the  
design parameters in Table 9-1.  
Table 9-1. Design Parameters  
PARAMETER  
Input voltage  
TEST CONDITIONS  
MIN TYPICAL  
MAX UNIT  
Power applied through PoE or adapter  
0
30  
57  
57  
V
V
V
Operating voltage  
Adapter voltage  
After startup  
40  
57  
Rising input voltage at device terminals  
Falling input voltage  
40  
Input UVLO  
V
30.5  
1.4  
11.9  
38  
Detection voltage  
At device terminals  
10.1  
23  
V
V
Classification voltage At device terminals  
Class 4  
Class signature A  
42  
mA  
DCDC Topology  
Output Voltage  
Output Current  
Primary Side Regulated Synch Flyback  
5
5
V
A
End-to-End Efficiency At full load  
Switching Frequency  
89  
%
250  
kHz  
9.2.1.1 Detailed Design Procedure  
9.2.1.1.1 Input Bridges and Schottky Diodes  
Using Schottky diodes instead of PN junction diodes for the PoE input bridges will reduce the power loss by  
about 30%. These are often used to maximize the efficiency when FET bridge architectures are not used.  
Schottky diode leakage current and different input bridge architectures can impact the detection signature.  
Setting reasonable expectations for the temperature range over which the detection signature is accurate is the  
simplest solution. Adjusting RDEN slightly may also help meet the requirement.  
A general recommendation for the input rectifiers are 2 A, 100-V rated discrete or bridge schottky diodes.  
The allows the option of either a discrete schottky bridge or a FET-Diode bridge for 1-2% higher overall system  
efficiency.  
9.2.1.1.2 Input TVS Protection  
A TVS, across the rectified PoE voltage must be used. TI recommends a SMAJ58A, or a part with equal to or  
better performance, for general indoor applications. If an adapter is connected from VDD to RTN, as in ORing  
option 2 above, voltage transients caused by the input cable inductance ringing with the internal PD capacitance  
can occur. Adequate capacitive filtering or a TVS must limit this voltage to be within the absolute maximum  
ratings. Outdoor transient levels or special applications require additional protection.  
ESD events between the PD power inputs and converter output, cause large stresses in the hotswap MOSFET if  
the input TVS becomes reverse biased and transient current around the TPS23731 is blocked. A SMAJ58A is a  
good initial selection between RTN (cathode) and VSS (anode).  
9.2.1.1.3 Input Bypass Capacitor  
The IEEE 802.3bt standard specifies an input bypass capacitor (from VDD to VSS) of 0.05 μF to 0.12 μF. Typically  
a 0.1-μF, 100-V, 10% ceramic capacitor is used.  
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9.2.1.1.4 Detection Resistor, RDEN  
The IEEE 802.3bt standard specifies a detection signature resistance, RDEN from 23.7 kΩ to 26.3 kΩ, or 25 kΩ ±  
5%. Choose an RDEN of 25.5 kΩ.  
9.2.1.1.5 Classification Resistor, RCLS  
.
Connect a resistor from to VSS to program the classification current according to the IEEE 802.3bt standard. The  
class power assigned should correspond to the maximum average power drawn by the PD during operation.  
Select RCLSx according to Table 8-1.  
9.2.1.1.6 APD Pin Divider Network, RAPD1, RAPD2  
The APD pin can be used to disable the TPS23731 device internal hotswap MOSFET giving the adapter source  
priority over the PoE source. An example calculation is provided, see SLVA306.  
9.2.1.1.7 Setting Frequency (RFRS) and Synchronization  
The converter switching frequency is set by connecting RFRS from the FRS pin to AGND.  
As an example:  
1. Optimal switching frequency (fSW) for isolated PoE applications is 250 kHz.  
2. Compute RFRS per Equation 2.  
3. Select 60.4 kΩ.  
The TPS23731 device may be synchronized to an external clock to eliminate beat frequencies from a sampled  
system, or to place emission spectrum away from an RF input frequency. Synchronization may be accomplished  
by applying a short pulse (TSYNC) of magnitude VSYNC to FRS as shown in Figure 8-3. RFRS should be chosen so  
that the maximum free-running frequency is just below the desired synchronization frequency. The  
synchronization pulse terminates the potential on-time period, and the off-time period does not begin until the  
pulse terminates. The pulse at the FRS pin should reach between 2.5 V and VB, with a minimum width of 25 ns  
(above 2.5 V) and rise and fall times less than 10 ns. The FRS node should be protected from noise because it  
is high-impedance. An RT on the order of 100 Ω in the isolated example reduces noise sensitivity and jitter.  
9.2.1.1.8 Bias Supply Requirements and CVCC  
Advanced startup in the TPS23731 allows for relatively low capacitance on the bias circuit. It is recommended to  
use a 1-µF 10% 25-V ceramic capacitor on CVCC  
.
9.2.1.1.9 APDO, T2P Interface  
The APDO, T2P pins are active low, open-drain outputs which give an indication about the PSE allocated power.  
Optocouplers can interface these pins to circuitry on the secondary side of the converter. A high-gain  
optocoupler and a high-impedance (for example, CMOS) receiver are recommended. Please see the as an  
example circuit. Below is an example design calculation.  
1. Let VCC = 12-V, VOUT = 5-V, = 10-kΩ, VTPx-OUT (low) = 400-mV maximum.  
a. ITPx-OUT = 0.46 mA.  
2. The optocoupler CTR will be needed to determine . A device with a minimum CTR of 300% at 5-mA LED bias  
current is selected. CTR will also vary with temperature and LED bias current. The strong variation of CTR  
with diode current makes this a problem that requires some iteration using the CTR versus IDIODE curve on  
the optocoupler data sheet.  
a. The approximate forward voltage of the optocoupler diode is 1.1 V from the data sheet.  
b. ITPx-MIN = 1 mA and RTPx = 10.6 kΩ.  
3. Select 10.7-kΩ resistor.  
9.2.1.1.10 Output Voltage Feedback Divider, RAUX, R1,R2  
R1, R2 and set the output voltage of the bias winding of the converter.  
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VREFC R + R  
(
)
1
2
VVCC  
=
R 2  
(8)  
9.2.1.1.11 Frequency Dithering for Conducted Emissions Control  
For optimum EMI performance, CDTR and RDTR should be calculated as described in DTHR and Frequency  
Dithering for Spread Spectrum Applications.  
These equations yield CDTR = 2.2 nF and RDTR = 235 kΩ where a 237-kΩ standard resistor can be used.  
10 Power Supply Recommendations  
The TPS23731 converter must be designed such that the input voltage of the converter is capable of operating  
within the IEEE 802.3 protocol at the recommended input voltage as shown in Table 8-3 and the minimum  
operating voltage of the adapter if applicable.  
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11 Layout  
11.1 Layout Guidelines  
The layout of the PoE front end should follow power and EMI/ESD best practice guidelines. A basic set of  
recommendations include:  
Parts placement must be driven by power flow in a point-to-point manner; RJ-45, Ethernet transformer, diode  
bridges, TVS and 0.1-μF capacitor, and TPS23731.  
All leads should be as short as possible with wide power traces and paired signal and return.  
There should not be any crossovers of signals from one part of the flow to another.  
Spacing consistent with safety standards like IEC60950 must be observed between the 48-V input voltage  
rails and between the input and an isolated converter output.  
The TPS23731 should be located over split, local ground planes referenced to VSS for the PoE input and to  
RTN for the switched output.  
Large copper fills and traces should be used on SMT power-dissipating devices, and wide traces or overlay  
copper fills should be used in the power path.  
It is recommended having at least 8 vias (PAD_G) and 5 vias on (PAD_S) connecting the exposed thermal  
pad through a top layer plane (2 oz. copper recommended) to a bottom VSS plane (2 oz. copper  
recommended) to help with thermal dissipation.  
11.2 Layout Example  
A detailed PCB layout can be found in the user’s guide of the TPS23731EVM-095 that show the top and bottom  
layer and assemblies as a reference for optimum parts placement.  
11.3 EMI Containment  
Use compact loops for dv/dt and di/dt circuit paths (power loops and gate drives).  
Use minimal, yet thermally adequate, copper areas for heat sinking of components tied to switching nodes  
(minimize exposed radiating surface).  
Use copper ground planes (possible stitching) and top layer copper floods (surround circuitry with ground  
floods).  
Use 4 layer PCB if economically feasible (for better grounding).  
Minimize the amount of copper area associated with input traces (to minimize radiated pickup).  
Use Bob Smith terminations, Bob Smith EFT capacitor, and Bob Smith plane.  
Use Bob Smith plane as ground shield on input side of PCB (creating a phantom or literal earth ground).  
Use of ferrite beads on input (allow for possible use of beads or 0-Ω resistors).  
Maintain physical separation between input-related circuitry and power circuitry (use ferrite beads as  
boundary line).  
Possible use of common-mode inductors.  
Possible use of integrated RJ-45 jacks (shielded with internal transformer and Bob Smith terminations).  
End-product enclosure considerations (shielding).  
11.4 Thermal Considerations and OTSD  
Sources of nearby local PCB heating should be considered during the thermal design. Typical calculations  
assume that the TPS23731 is the only heat source contributing to the PCB temperature rise. It is possible for a  
normally operating TPS23731 device to experience an OTSD event if it is excessively heated by a nearby  
device.  
11.5 ESD  
ESD requirements for a unit that incorporates the TPS23731 have a much broader scope and operational  
implications than are used in TI’s testing. Unit-level requirements should not be confused with reference design  
testing that only validates the ruggedness of the TPS23731.  
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12 Device and Documentation Support  
12.1 Documentation Support  
12.1.1 Related Documentation  
For related documentation, see the following:  
IEEE Standard for Information Technology … Part 3: Carrier sense multiple access with collision detection  
(CSMA/CD) access method and physical layer specifications, IEEE Computer Society, IEEE 802.3™at  
(Clause 33)  
Information technology equipment – Radio disturbance characteristics – Limits and methods of  
measurement, International Electrotechnical Commission, CISPR 22 Edition 5.2, 2006-03  
Advanced Adapter ORing Solutions using the TPS23753, Eric Wright, TI, SLVA306  
Practical Guidelines to Designing an EMI-Compliant PoE Powered Device With Isolated Flyback, Donald V.  
Comiskey, TI, SLUA469  
12.2 Support Resources  
TI E2Esupport forums are an engineer's go-to source for fast, verified answers and design help — straight  
from the experts. Search existing answers or ask your own question to get the quick design help you need.  
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do  
not necessarily reflect TI's views; see TI's Terms of Use.  
12.3 Trademarks  
TI E2Eis a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
12.4 Electrostatic Discharge Caution  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled  
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may  
be more susceptible to damage because very small parametric changes could cause the device not to meet its published  
specifications.  
12.5 Glossary  
TI Glossary  
This glossary lists and explains terms, acronyms, and definitions.  
13 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
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PACKAGE OPTION ADDENDUM  
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17-Dec-2020  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
TPS23731RMTR  
ACTIVE  
VQFN  
RMT  
45  
3000 RoHS & Green  
NIPDAU  
Level-3-260C-168 HR  
-40 to 125  
TPS23731  
DB0 WA1  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
18-Dec-2020  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TPS23731RMTR  
VQFN  
RMT  
45  
3000  
330.0  
16.4  
5.25  
7.25  
1.45  
8.0  
16.0  
Q1  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
18-Dec-2020  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
VQFN RMT 45  
SPQ  
Length (mm) Width (mm) Height (mm)  
367.0 367.0 35.0  
TPS23731RMTR  
3000  
Pack Materials-Page 2  
PACKAGE OUTLINE  
VQFN - 1 mm max height  
RMT0045A  
PLASTIC QUAD FLATPACK-NO LEAD  
A
5.1  
4.9  
B
PIN 1 INDEX AREA  
7.1  
6.9  
1 MAX  
C
SEATING PLANE  
0.08 C  
0.05  
0.00  
2.9±0.1  
PKG  
(0.1) TYP  
14  
22  
39X 0.4  
13  
23  
1.4  
1.3751  
2.15±0.1  
10  
9
47  
0.6  
PKG  
0.2  
0.6  
29  
30  
2X  
5.2  
1.4  
2.1±0.1  
46  
0.5  
0.3  
35  
45X  
C
1
PIN 1 ID  
(OPTIONAL)  
45  
36  
0.25  
0.15  
45X  
3.6  
3.7±0.1  
0.1  
0.05  
A B  
C
4225180/A 08/2019  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. The package thermal pad must be soldered to the printed circuit board for optimal thermal and mechanical performance.  
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EXAMPLE BOARD LAYOUT  
VQFN - 1 mm max height  
RMT0045A  
PLASTIC QUAD FLATPACK-NO LEAD  
(3.7)  
(3.6)  
PKG  
45X (0.2)  
45X (0.6)  
36  
45  
39X (0.4)  
1
35  
(2.205)  
46  
(1.4)  
(2.1)  
(R0.05)  
TYP  
(0.595)  
30  
29  
PKG  
(6.8) (5.2)  
(0.2)  
(0.55)  
(0.6)  
9
47  
10  
(1.375) (2.15)  
(2.2)  
(1.4)  
23  
13  
(Ø0.2) VIA  
TYP  
14  
22  
(2.9)  
(4.8)  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE: 12X  
0.05 MIN  
ALL AROUND  
0.05 MAX  
ALL AROUND  
SOLDER MASK  
OPENING  
METAL  
EXPOSED METAL  
SOLDER MASK  
OPENING  
EXPOSED METAL  
METAL UNDER  
SOLDER MASK  
NON- SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4225180/A 08/2019  
NOTES: (continued)  
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature  
number SLUA271 (www.ti.com/lit/slua271).  
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown  
on this view. It is recommended that vias under paste be filled, plugged or tented.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
VQFN - 1 mm max height  
RMT0045A  
PLASTIC QUAD FLATPACK-NO LEAD  
(3.6)  
PKG  
45X (0.2)  
45X (0.6)  
6X (1.05)  
36  
45  
39X (0.4)  
6X (0.94)  
35  
1
(1.97)  
46  
(R0.05)  
TYP  
(0.83)  
30  
PKG  
(6.8) (5.2)  
29  
(0.2)  
(0.6)  
9
(0.795)  
4X (0.96)  
10  
13  
47  
(1.4)  
(1.955)  
METAL TYP  
23  
14  
22  
4X (1.27)  
(4.8)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
PAD 46: 76%; PAD 47: 78%  
SCALE: 12X  
4225180/A 08/2019  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
www.ti.com  
IMPORTANT NOTICE AND DISCLAIMER  
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE  
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”  
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY  
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD  
PARTY INTELLECTUAL PROPERTY RIGHTS.  
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate  
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable  
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you  
permission to use these resources only for development of an application that uses the TI products described in the resource. Other  
reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third  
party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims,  
damages, costs, losses, and liabilities arising out of your use of these resources.  
TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on  
ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable  
warranties or warranty disclaimers for TI products.  
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265  
Copyright © 2020, Texas Instruments Incorporated  

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