TPS23731RMTR [TI]
TPS23731 IEEE 802.3bt Type 3 Class 1-4 PoE PD with No-Opto Flyback DC-DC Controller;型号: | TPS23731RMTR |
厂家: | TEXAS INSTRUMENTS |
描述: | TPS23731 IEEE 802.3bt Type 3 Class 1-4 PoE PD with No-Opto Flyback DC-DC Controller 光电二极管 |
文件: | 总53页 (文件大小:2285K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TPS23731
SLVSER7 – OCTOBER 2020
TPS23731 IEEE 802.3bt Type 3 Class 1-4 PoE PD with No-Opto Flyback DC-DC
Controller
1 Features
3 Description
•
Complete IEEE 802.3bt Type 3 (Class 1-4) and
802.3at PoE PD Solution
The TPS23731 device combines a Power over
Ethernet (PoE) powered device (PD) interface, and a
current-mode DC-DC controller optimized for flyback
switching regulator designs where the use of primary-
side regulation (PSR) is supported. The PoE interface
supports the IEEE 802.3bt and IEEE 802.3at
standards for applications needing up to 25.5 W or
less at PD input.
– EA Gen 2 logo-ready (PoE 2 PD Controller)
– Robust 100-V, 0.3-Ω (typ) Hotswap MOSFET
– Supports power levels for up to 30-W operation
Integrated PWM controller for flyback configuration
– Flyback control with primary-side regulation
•
•
•
Supports CCM operation
Programmable spread spectrum frequency dithering
(SSFD) is provided to minimize the size and cost of
EMI filter. Advanced Startup with adjustable soft-start
helps to use minimal bias capacitor while simplifying
converter startup and hiccup design, also ensuring
that IEEE 802.3bt/at startup requirements are met.
±1.5% (typ, 5-V output) load regulation
(0-100% load range) — with Sync FET
±3% (typ, 12-V output) load regulation
(5-100% load range) — diode rectified
•
– Also supports secondary-side regulation
– Soft-start control with advanced startup and
hiccup mode overload protection
The soft-stop feature minimizes stress on switching
sync FET(s), allowing FET BOM cost reduction.
– Soft-stop shutdown
– Adjustable frequency with synchronization
– Programmable frequency dithering for EMI
Automatic Maintain Power Signature (MPS)
– Auto-adjust to PSE type and load current with
auto-stretch
The PSR feature of the DC-DC controller uses
feedback from an auxiliary winding for control of the
output voltage, eliminating the need for external shunt
regulator and optocoupler. It is optimized for
continuous conduction mode (CCM), and can work
with secondary side synchronous rectification,
resulting in optimum efficiency, regulation accuracy
and step load response over multiple outputs.
•
•
•
Primary adapter priority input
–40°C to 125°C junction temperature range
2 Applications
The DC-DC controller features slope compensation
and blanking. Typical switching frequency is 250 kHz.
•
•
•
•
Video and VoIP Telephones
Access Points
Security Cameras
The automatic MPS enables applications with low
power modes or multiple power feeds. It automatically
adjusts its pulsed current amplitude and duration
according to PSE Type and system conditions, to
maintain power while minimizing consumption.
Redundant Power Feeds or Power Sharing
Device Information (1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
TPS23731
VSON (45)
7.00 mm × 5.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
T1
TPS23731
VCC
+
RCL CCL
VDD
DEN
CBULK
DCL
VOUT2
COUT2
RDEN
APDO
T2P
GATE
CS
0.1 ꢀF
58V
CLS
RCS
VOUT1
VCC
COUT
COMP
DCC
VSS
APD
CCOMP
RCOMP
I_in
R1
CVCC
FB
CCC2
LINEUV
FRS
RUV2
DA
CP
R2
SST
CSST
RDTR
EA_DIS
VB
DTHR
RTN GND I_STP PSRS
CVB
RAPD2
CDTR
RFRS
48V
Adapter
RI_STP
Simplified Application
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS23731
SLVSER7 – OCTOBER 2020
www.ti.com
Table of Contents
1 Features............................................................................1
2 Applications.....................................................................1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Device Comparison Table...............................................3
6 Pin Configuration and Functions...................................3
7 Specifications.................................................................. 6
7.1 Absolute Maximum Ratings ....................................... 6
7.2 ESD Ratings .............................................................. 6
7.3 Recommended Operating Conditions ........................7
7.4 Thermal Information ...................................................7
7.5 Electrical Characteristics: DC-DC Controller
Section ......................................................................... 7
7.6 Electrical Characteristics PoE ..................................10
7.7 Typical Characteristics..............................................13
8 Detailed Description......................................................17
8.1 Overview...................................................................17
8.2 Functional Block Diagram.........................................18
8.3 Feature Description...................................................19
8.4 Device Functional Modes..........................................27
9 Application and Implementation..................................41
9.1 Application Information............................................. 41
9.2 Typical Application.................................................... 41
10 Power Supply Recommendations..............................44
11 Layout...........................................................................45
11.1 Layout Guidelines................................................... 45
11.2 Layout Example...................................................... 45
11.3 EMI Containment.................................................... 45
11.4 Thermal Considerations and OTSD........................45
11.5 ESD.........................................................................45
12 Device and Documentation Support..........................46
12.1 Documentation Support.......................................... 46
12.2 Support Resources................................................. 46
12.3 Trademarks.............................................................46
12.4 Electrostatic Discharge Caution..............................46
12.5 Glossary..................................................................46
13 Mechanical, Packaging, and Orderable
Information.................................................................... 46
4 Revision History
DATE
REVISION
NOTES
October 2020
*
Initial release.
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5 Device Comparison Table
KEY FEATURES
Class Range
ACF Support
SSFD
TPS23730
1-6
TPS23731
1-4
TPS23734
1-4
Yes
No
Yes
Yes
Yes
Yes
Soft-stop
Yes
Yes
Yes
Advanced Startup
PSR (Flyback)
Auto MPS
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
PPD
Yes
No
No
APD
Yes
Yes
Yes
PoE allocated power and AUX power
indicator(s)
TPH/TPL (parallel) or TPL
(serial)
T2P, APDO
T2P, APDO
6 Pin Configuration and Functions
CS
1
COMP
35
34
33
32
31
30
AGND
DTHR
2
3
4
5
6
FB
SST
FRS
APD
NC
I_STP
NC
PAD_G
TEST
7
8
9
RTN
RTN
RTN
NC
29
28
27
26
25
24
23
VSS
VSS
NC
10
11
12
13
NC
PAD_S
NC
EMPS
DEN
VDD
NC
APDO
Figure 6-1. Package Pinout
Table 6-1. Pin Functions
PIN
I/O
DESCRIPTION
NO.
NAME
DC-DC controller current sense input. Connect directly to the external power current sense
resistor.
1
CS
I/O
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Table 6-1. Pin Functions (continued)
PIN
I/O
DESCRIPTION
NO.
NAME
2
AGND
-
AGND is the DC-DC converter analog return. Tie to RTN and GND on the circuit board.
Used for spread spectrum frequency dithering. Connect a capacitor (determines the modulating
frequency) from DTHR to RTN and a resistor (determines the amount of dithering) from DTHR to
FRS. If dithering is not used, short DTHR to VB pin.
3
4
DTHR
FRS
O
I
This pin controls the switching frequency of the DC-DC converter. Tie a resistor from this pin to
RTN to set the frequency.
Primary auxiliary power detect input. Raise 1.5 V above RTN to disable pass MOSFET, also
turning class off. If not used, connect APD to RTN.
5
APD
RTN
I
-
I
7, 8, 9
11
RTN is the output of the PoE hotswap and the reference ground for the DC-DC controller.
Automatic MPS enable input, referenced to RTN, internally pulled-up to 5-V internal rail. Tie to
RTN to disable automatic MPS.
EMPS
Active low output referenced to RTN, indicates that an auxiliary power adapter is detected via the
APD input.
13
14
APDO
T2P
O
O
Active low output that indicates a PSE has performed the IEEE 802.3at Type 2 hardware
classification, or APD is active.
17
21
REF
CLS
O
O
Internal 1.25-V voltage reference. Connect a 49.9-kΩ_1% resistor from REF to VSS.
Connect a resistor from CLS to VSS to program the classification current.
Positive input power rail for PoE interface circuit and source of DC-DC converter start-up current.
Bypass with a 0.1 µF to VSS and protect with a TVS.
23
24
VDD
DEN
—
Connect a 25.5-kΩ resistor from DEN to VDD to provide the PoE detection signature. Pulling this
pin to VSS during powered operation causes the internal hotswap MOSFET to turn off.
I/O
27, 28
30
VSS
-
Negative power rail derived from the PoE source.
Used internally for test purposes only. Leave open.
TEST
O
This pin sets the SST discharge current during a soft-stop event independently from the setting
used during a regular soft-start event. Connect a resistor from this pin to AGND to set the DC/DC
soft-stop rate.
32
33
I_STP
SST
I
A capacitor from SST to RTN pin sets the soft-start (ISSC charge current) and the hiccup timer (ISSD
discharge current) for the DC-DC converter. Connect a capacitor from this pin to RTN to set the
DC/DC startup rate.
I/O
Converter error amplifier inverting (feedback) input. If flyback configuration with primary-side
regulation, it is typically driven by a voltage divider and capacitor from the auxiliary winding,
working with CP pin, FB also being connected to the COMP compensation network. If optocoupler
feedback is enabled, tie FB to VB.
34
FB
I
Compensation output of the DC-DC convertor error amplifier or control loop input to the PWM. If
the internal error amplifier is used, connect the compensation networks from this pin to the FB pin
to compensate the converter. If optocoupler feedback is enabled, the optocoupler and its network
pulled up to VB directly drives the COMP pin.
35
36
COMP
I/O
I
Error Amplifier disable input, referenced to AGND, internally pulled-up to 5V internal rail. Leave
EA_DIS open to disable the Error amplifier, to enable optocoupler feedback for example. Connect
to AGND otherwise.
EA_DIS
5-V bias rail for DC/DC control circuits and the feedback optocoupler (when in use). Connect a 0.1-
uF capacitor from this pin to AGND to provide bypassing.
37
38
VB
O
I
LINEUV is used to monitor the bulk capacitor voltage to trigger a soft-stop event when an
undervoltage condition is detected if APD is low. If not used, connect LINEUV to VB pin.
LINEUV
PSR Sync enable input, referenced to AGND, internally pulled-up to 5V internal rail. PSRS works
with CP pin to support flyback architecture using primary-side regulation. Leave PSRS open if the
flyback output stage is configured with synchronous rectification and uses PSR. If diode
rectification is used, or for applications not using PSR, connect PSRS to AGND.
39
40
PSRS
VBG
I
5-V bias rail for the switching FET gate driver circuit. For internal use only. Bypass with a 0.1-μF
ceramic capacitor to GND pin.
O
DC/DC converter bias voltage. The internal startup current source and converter bias winding
output power this pin. Connect a 1µF minimum ceramic capacitor to RTN.
42
43
VCC
I/O
O
GATE
Gate drive output for the main DC-DC converter switching MOSFET
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Table 6-1. Pin Functions (continued)
PIN
I/O
DESCRIPTION
NO.
44
NAME
CP
CP provides the clamp for the primary-side regulation loop. Connect this pin to the lower end of the
bias winding of the flyback transformer.
O
-
45
GND
.Power ground used by the flyback power FET gate driver and CP. Connect to RTN.
6, 10, 12,
15, 16,
18-20, 22,
25, 26, 29,
31, 41
NC
-
No connect pin. Leave open.
The exposed thermal pad must be connected to VSS. A large fill area is required to assist in heat
dissipation.
47
46
PAD_S
PAD_G
-
-
The exposed thermal pad must be connected to RTN. A large fill area is required to assist in heat
dissipation.
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7 Specifications
7.1 Absolute Maximum Ratings
Voltage are with respect to VSS (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
MAX
100
UNIT
VDD, DEN, GND, AGND, RTN(2)
Input voltage
VDD to RTN
100
V
APD, FB, CS, EA_DIS, LINEUV, PSRS, EMPS, all to RTN
6.5
FRS(3), COMP, VB(3), VBG(3), I_STP(3), DTHR(3), SST(3), all to RTN
6.5
VCC to RTN
GATE(3) to RTN
CP to GND
GND, AGND, all to RTN
REF(3) , CLS(3)
T2P, APDO , all to RTN
VB, VBG, VCC
COMP
19
VCC+0.3
60
Voltage
V
0.3
6.5
19
Internally limited
Internally limited
Internally limited
Sourcing current
Sourcing current
Sinking current
Sinking current
mA
mA
mA
REF
CLS
65
1
RTN
Internally limited
Internally limited
DEN
COMP
T2P, APDO
10
2
mA
A
Peak sourcing
current
CP
Peak sinking current CP
TJ(max) Maximum junction temperature
Tstg Storage temperature
0.7
A
Internally Limited
–65
°C
°C
150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) IRTN = 0 for VRTN > 80 V.
(3) Do not apply voltage to these pins.
7.2 ESD Ratings
VALUE
±2000
±500
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
IEC 61000-4-2 contact discharge(3)
V(ESD)
Electrostatic discharge
V
±8000
±15000
IEC 61000-4-2 air-gap discharge(3)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) Surges per EN61000-4-2, 1999 applied between RJ-45 and output ground and between adapter input and output ground of
the TPS23730, TPS23730EVM-093 evaluation module (documentation available on the web). These were the test levels, not the
failure threshold.
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7.3 Recommended Operating Conditions
Voltage with respect to VSS (unless otherwise noted)
MIN
0
NOM
MAX
60
UNIT
VDD, RTN, GND, AGND
VCC to RTN
0
16
Input voltage range APD, EA_DIS, LINEUV, PSRS, FB, all to RTN
0
VB
2
V
CS to RTN
CP to GND
0
0
45
Voltage range
Voltage range
Sinking current
Sinking current
COMP to RTN
VB
VCC
0.65
3
V
V
T2P, APDO, all to RTN
0
RTN
A
T2P, APDO
mA
VCC
20
Sourcing current
mA
μF
VB
5
VB, VBG(1)
0.08
0.7
0.1
1
1
Capacitance
Resistance
Resistance
VCC
100
499
I_STOP
16.5
30
KΩ
Ω
CLS(1)
REF(1)
48.9
35
49.9
50.9
125
kΩ
ns
°C
Synchronization pulse width input (when used)
Operating junction temperature
TJ
–40
(1) Voltage should not be externally applied to this pin.
7.4 Thermal Information
RMT (VSON)
45 PINS
38.5
THERMAL METRIC
UNIT
(1)
RθJA
Junction-to-ambient thermal resistance
RθJC(top)
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
23.6
(1)
RθJB
19.3
(1)
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom PAD_S pad) thermal resistance
6.8
°C/W
(1)
ψJB
19.3
RθJC(bot_POE)
3.9
RθJC(bot_DCDC) Junction-to-case (bottom PAD_G pad) thermal resistance
9.1
(1) Thermal metrics are not JEDEC standard values and are based on the TPS23731EVM-095 evaluation board.
7.5 Electrical Characteristics: DC-DC Controller Section
Unless otherwise noted, VVDD = 48 V; RDEN = 25.5 kΩ; RFRS = 60.4 kΩ; RI_STP = 499 kΩ; CLS, T2P, APDO, and
PSRS open; CS, EA_DIS, APD, EMPS, AGND and GND connected to RTN; FB, LINEUV and DTHR connected
to VB; CVB = CVBG = 0.1 μF; CVCC = 1 μF; CSST = 0.047 μF; RREF = 49.9 kΩ; 8.5 V ≤ VVCC ≤ 16 V; –40°C ≤ TJ ≤
125°C. Positive currents are into pins unless otherwise noted. Typical values are at 25°C.
[VVSS = VRTN], all voltages referred to VRTN , VAGND and VGND unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
DC-DC SUPPLY (VCC)
VCUVLO_
VVCC rising
8
5.85
2
8.25
6.1
8.5
6.35
2.3
V
V
V
R
VCUVLO_F Undervoltage lockout
VVCC falling, VFB = VRTN
Hysteresis(1)
VCUVLO_
2.15
H
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7.5 Electrical Characteristics: DC-DC Controller Section (continued)
Unless otherwise noted, VVDD = 48 V; RDEN = 25.5 kΩ; RFRS = 60.4 kΩ; RI_STP = 499 kΩ; CLS, T2P, APDO, and
PSRS open; CS, EA_DIS, APD, EMPS, AGND and GND connected to RTN; FB, LINEUV and DTHR connected
to VB; CVB = CVBG = 0.1 μF; CVCC = 1 μF; CSST = 0.047 μF; RREF = 49.9 kΩ; 8.5 V ≤ VVCC ≤ 16 V; –40°C ≤ TJ ≤
125°C. Positive currents are into pins unless otherwise noted. Typical values are at 25°C.
[VVSS = VRTN], all voltages referred to VRTN , VAGND and VGND unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
VVCC = 10 V, VFB = VRTN , RDT = 24.9 kΩ, CP with 2-
kΩ pull up to 30 V
IRUN
Operating current
1.2
2
2.4
mA
mA
VAPD = 2.5V
VVDD ≥ 28V, VVCC = 11.7 V
VVDD = 10.2V, VVCC = 8.6 V
VVDD = 10.2V, VVCC = 6.8 V
21.5
1
30
6
34
17.5
32
IVC_ST
Startup source current
8
16
VVDD = 10.2 V, VVCC(0) = 0 V, measure time until
VCUVLO_R
0.25
0.24
0.7
1.15
0.48
ms
ms
tST
Startup time, CVCC = 1 μF
VCC startup voltage
VVDD = 35 V, VVCC(0) = 0 V, measure time until
VCUVLO_R
0.35
Measure VVCC during startup, IVCC = 0 mA
Measure VVCC during startup, IVCC = 21.5 mA
11
11
12.5
12.5
14
14
VVC_ST
V
V
VLINEUV < VLIUVF, Measure VVCC during soft-stop, IVCC
= 0 mA
11
11
12.5
12.5
14
14
VVC_SSTP VCC soft-stop voltage
VLINEUV < VLIUVF, Measure VVCC during soft-stop, IVCC
= 21.5 mA
VB
Voltage
VFB = VRTN, 8.5 V ≤ VVCC ≤ 16 V, 0 ≤ IVB ≤ 5 mA
4.75
5.0
5.25
V
kHz
V
DC-DC TIMING (FRS)
fSW
Switching frequency
Duty cycle
VFB = VRTN, Measure at GATE
VFB = VRTN, RDT = 24.9 kΩ, Measure at GATE
Input threshold
223
74.5%
2
248
78.5%
2.2
273
82.5%
2.4
DMAX
VSYNC
Synchronization
FREQUENCY DITHERING RAMP GENERATOR (DTHR)
3 x IFRS
49.6
µA
µA
µA
µA
V
IDTRCH Charging (sourcing) current 0.5 V < VDTHR < 1.5 V
47.2
52.1
3 x IFRS
49.6
IDTRDC
Discharging (sinking) current 0.5 V < VDTHR < 1.5 V
47.2
1.41
52.1
1.60
VDTUT
VDTLT
VDTPP
Dithering upper threshnold
Dithering lower threshold
Dithering pk-pk amplitude
VDTHR rising until IDTHR > 0
VDTHR falling until IDTHR < 0
1.513
0.487
1.026
0.43
0.54
V
1.005
1.046
V
ERROR AMPLIFIER (FB, COMP)
VREFC
IFB_LK
Feedback regulation voltage
1.723
1.75
1.2
1.777
0.5
V
FB leakage current (source or
sink)
VFB = 1.75 V
μA
Small signal unity gain
bandwidth
GBW
0.9
MHz
AOL
Open loop voltage gain
0% duty-cycle threshold
COMP source current
COMP sink current
70
1.35
1
80
db
V
VZDC
VCOMP falling until GATE switching stops
VFB = VRTN , VCOMP = 3 V
1.5
1.65
ICOMPH
ICOMPL
mA
mA
V
VFB = VVB , VCOMP = 1.25 V
2.1
4
6
VCOMPH COMP high voltage
VCOMPL COMP low voltage
VFB = VRTN , 15 kΩ from COMP to RTN
VFB = VVB , 15 kΩ from COMP to VB
VB
1.1
V
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7.5 Electrical Characteristics: DC-DC Controller Section (continued)
Unless otherwise noted, VVDD = 48 V; RDEN = 25.5 kΩ; RFRS = 60.4 kΩ; RI_STP = 499 kΩ; CLS, T2P, APDO, and
PSRS open; CS, EA_DIS, APD, EMPS, AGND and GND connected to RTN; FB, LINEUV and DTHR connected
to VB; CVB = CVBG = 0.1 μF; CVCC = 1 μF; CSST = 0.047 μF; RREF = 49.9 kΩ; 8.5 V ≤ VVCC ≤ 16 V; –40°C ≤ TJ ≤
125°C. Positive currents are into pins unless otherwise noted. Typical values are at 25°C.
[VVSS = VRTN], all voltages referred to VRTN , VAGND and VGND unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
100
0.2
MAX UNIT
COMP input resistance, error
amplifier disabled
EA_DIS open
70
130
kΩ
COMP to CS gain
ΔVCS / ΔVCOMP , 0 V < VCS < 0.22 V
0.19
0.21
V/V
SOFT-START, SOFT-STOP (SST, I_STP)
ISSC
Charge current
SST charging, 6.35 V ≤ VVCC ≤ 16 V
SST discharging, 6.35 V ≤ VVCC ≤ 16 V
7.5
3
10
4
12.5
5
µA
µA
V
ISSD
Discharge current
Soft-start lower threshold
VSFST
0.15
1.99
0.2
2.1
0.25
2.21
VSTUOF Startup turn off threshold
VSST rising until VCC startup turns off
V
Soft-start offset voltage,
VFB = VRTN, VSST rising until start of switching
0.2
0.25
0.6
0.3
V
closed-loop mode
VSSOFS
Soft-start offset voltage, peak VCOMP = VVB, VSST rising until start of switching,
0.55
0.65
V
V
current mode
EA_DIS open
VSSCL
Soft-start clamp
2.3
1.5
2.6
2.5
RI_STP = 499 kΩ, VLINEUV < VLIUVF
RI_STP = 16.5 kΩ, ,VLINEUV < VLIUVF
2
SST discharge current in soft-
stop mode
ISSD_SP
µA
V
52.5
60.6
67.5
VSSTPEN
End of soft-stop threshold
VFB = VRTN, VLINEUV < VLIUVF
0.15
0.2
0.25
D
CURRENT SENSE (CS)
VCSMAX Maximum threshold voltage
tOFFD_IL Current limit turn off delay
VFB = VRTN, VCS rising
VCS = 0.3 V
0.227
25
0.25
41
0.273
60
V
ns
PWM comparator turn off
tOFFD_PW
delay
VCS = 0.15 V, EA_DIS open, VCOMP = 2 V
In addtition to tOFFD_IL and tOFFD_PW
25
75
51
41
95
66
60
115
79
ns
ns
Blanking delay
Internal slope compensation
VFB = VRTN, Peak voltage at maximum duty cycle,
referred to CS
VSLOPE
voltage
mV
Peak slope compensation
current
VFB = VRTN, ICS at maximum duty cycle (ac
component)
ISL_EX
14
-3
20
-2
26
-1
μA
μA
Bias current
DC component of CS current
LINE UNDERVOLTAGE, SOFT-STOP (LINEUV)
VLIUVF
VLIUVH
VLINEUV falling
Hysteresis(1)
VLINEUV = 3 V
2.86
57
2.918
82
2.976
107
1
V
LINEUV falling threshold
voltage
mV
µA
Leakage current
GATE
VFB = VRTN , VVCC = 10 V, VGATE = 0 V, pulsed
measurement
Peak source current
Peak sink current
0.3
0.6
0.5
0.9
0.8
A
A
VFB = VRTN , VVCC = 10 V, VGATE = 10 V, pulsed
measurement
1.45
Rise time(2)
Fall time(2)
tprr10-90 , CGATE = 1 nF , VVCC = 10 V
tpff90-10 , CGATE = 1 nF , VVCC = 10 V
30
15
ns
ns
CLAMPING FET (CP)
RDS(ON)C
CP FET on resistance
ICP = 100 mA
1.5
3.3
Ω
L
CLAMPING DIODE (CP)
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7.5 Electrical Characteristics: DC-DC Controller Section (continued)
Unless otherwise noted, VVDD = 48 V; RDEN = 25.5 kΩ; RFRS = 60.4 kΩ; RI_STP = 499 kΩ; CLS, T2P, APDO, and
PSRS open; CS, EA_DIS, APD, EMPS, AGND and GND connected to RTN; FB, LINEUV and DTHR connected
to VB; CVB = CVBG = 0.1 μF; CVCC = 1 μF; CSST = 0.047 μF; RREF = 49.9 kΩ; 8.5 V ≤ VVCC ≤ 16 V; –40°C ≤ TJ ≤
125°C. Positive currents are into pins unless otherwise noted. Typical values are at 25°C.
[VVSS = VRTN], all voltages referred to VRTN , VAGND and VGND unless otherwise noted.
PARAMETER
TEST CONDITIONS
VPSRS = 0 V, ICP = 15 mA
VPSRS = 0 V, VCP = 45 V
MIN
TYP
MAX UNIT
VFCP
CP Diode forward voltage
CP Leakage current
0.45
0.6
0.85
20
V
µA
AUXILIARY POWER DETECTION (APD, APDO)
VAPDEN
VAPDH
VAPD rising
1.42
1.5
1.58
0.115
1
V
V
APD threshold voltage
Hysteresis(1)
0.075
0.095
Leakage current
VAPD = 5 V
µA
V
VAPL
APDO output low voltage
Leakage current
VAPD = 5 V, IAPDO = 1 mA, startup has completed
VAPDO = 10 V
0.27
0.5
1
µA
THERMAL SHUTDOWN
Turnoff temperature
Hysteresis(2)
145
155
15
165
°C
°C
(1) The hysteresis tolerance tracks the rising threshold for a given device.
(2) These parameters are provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's
product warranty.
7.6 Electrical Characteristics PoE
Unless otherwise noted, VVDD = 48 V; RDEN = 25.5 kΩ; RFRS = 60.4 kΩ; RI_STP = 499 kΩ; CLS, T2P, APDO, and
PSRS open; CS, EA_DIS, APD, EMPS, AGND and GND connected to RTN; FB, LINEUV and DTHR connected
to VB; CVB = CVBG = 0.1 μF; CVCC = 1 μF; CSST = 0.047 μF; RREF = 49.9 kΩ; –40°C ≤ TJ ≤ 125°C. Positive
currents are into pins unless otherwise noted. Typical values are at 25°C.
VVCC-RTN = 0 V, all voltages referred to VVSS unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
PD DETECTION (DEN)
DEN open, VVDD = 10 V, Not in mark, Measure
IVDD + IRTN
Detection bias current
3.5
6.9
13.9
µA
Ilkg
DEN leakage current
Detection current
VDEN = VVDD = 60 V, Float RTN, Measure IDEN
Measure IVDD + IDEN + IRTN, VVDD = 1.4 V
0.1
5
µA
μA
53.5
391
56.5
58.6
Measure IVDD + IDEN + IRTN, VVDD = 10 V, Not in
mark
398
4
406.2
5
μA
V
Hotswap disable
threshold
VPD_DIS
DEN falling
3
PD CLASSIFICATION (CLS)
13 V ≤ VDD ≤ 21 V,
RCLS = 806 Ω
RCLS = 130 Ω
RCLS = 69.8 Ω
RCLS = 46.4 Ω
Measure IVDD + IDEN
IRTN
+
+
+
+
1.9
9.9
2.5
10.6
18.6
27.9
2.9
11.3
19.4
29.3
mA
mA
mA
mA
13 V ≤ VDD ≤ 21 V,
Measure IVDD + IDEN
IRTN
Classification signature
current
ICLS
13 V ≤ VDD ≤ 21 V,
Measure IVDD + IDEN
IRTN
17.6
26.5
13 V ≤ VDD ≤ 21 V,
Measure IVDD + IDEN
IRTN
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7.6 Electrical Characteristics PoE (continued)
Unless otherwise noted, VVDD = 48 V; RDEN = 25.5 kΩ; RFRS = 60.4 kΩ; RI_STP = 499 kΩ; CLS, T2P, APDO, and
PSRS open; CS, EA_DIS, APD, EMPS, AGND and GND connected to RTN; FB, LINEUV and DTHR connected
to VB; CVB = CVBG = 0.1 μF; CVCC = 1 μF; CSST = 0.047 μF; RREF = 49.9 kΩ; –40°C ≤ TJ ≤ 125°C. Positive
currents are into pins unless otherwise noted. Typical values are at 25°C.
VVCC-RTN = 0 V, all voltages referred to VVSS unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
13 V ≤ VDD ≤ 21 V,
RCLS = 32 Ω
RCLS = 32 Ω
Measure IVDD + IDEN
IRTN
+
+
37.8
39.9
42
mA
13 V ≤ VDD ≤ 21 V,
Measure IVDD + IDEN
IRTN
Classification signature
current, 3rd class event
ICLS
37.8
39.9
42
mA
Classification regulator
lower threshold rising
VCL_ON
VCL_H
VVDD rising, ICLS
Hysteresis(1)
↑
↓
11.4
0.8
12.2
1.2
13
V
V
Classification regulator
lower threshold
1.6
VCU_OFF
VCU_H
VVDD rising, ICLS
Hysteresis(1)
21
22
23
1
V
V
Classification regulator
upper threshold
0.5
0.77
Mark state reset
threshold
VMSR
VVDD falling
3
6
3.9
10
5
12
1
V
Mark state resistance
Leakage current
2-point measurement at 5 V and 10.1 V
kΩ
μA
VVDD = 60 V, VCLS = 0 V, VDEN = VVSS, Measure
ICLS
Ilkg
Long first class event
timing
tLCF_PD
Class 1st event time duration for short MPS
76
81.5
87
ms
RTN (PASS DEVICE)
ON-resistance
0.3
0.55
1.1
Ω
A
ILIM
Current limit
VRTN = 1.5 V, pulsed measurement
0.75
100
0.925
VRTN = 2 V, VVDD: 20 V → 48 V, measure IRTN
pulsed measurement
,
IIRSH
inrush current limit
140
180
mA
Percentage of inrush current.
Inrush delay
80%
80
90%
84
99%
88
Inrush termination
tINR_DEL
ms
V
Foldback voltage
threshold
VRTN rising
13.5
1.5
14.8
1.8
16.1
VRTN rising to when current limit changes to
Foldback deglitch time inrush current limit. This applies in normal
operating condition or during auto MPS mode.
2.1
70
ms
μA
Leakage current
VVDD = VRTN = 100 V, VDEN = VVSS
PSE TYPE INDICATION (T2P)
IT2P = 1 mA, after 2- or 3-event classification,
startup has completed, VRTN = 0 V
Output low voltage
0.27
0.5
1
V
Leakage current
VT2P-RTN = 10 V, VRTN = 0 V
µA
PD INPUT SUPPLY (VDD)
Undervoltage lockout
threshold
VUVLO_R
VVDD rising
VVDD falling
Hysteresis (1)
35.8
30.5
5.7
37.6
32
39.5
33.6
6.3
V
V
Undervoltage lockout
threshold
VUVLO_F
Undervoltage lockout
threshold
VUVLO_H
6.0
650
V
40 V ≤ VVDD ≤ 60 V, Startup completed, VVCC
10 V, Measure IVDD
=
IVDD_ON
Operating current
1040
µA
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7.6 Electrical Characteristics PoE (continued)
Unless otherwise noted, VVDD = 48 V; RDEN = 25.5 kΩ; RFRS = 60.4 kΩ; RI_STP = 499 kΩ; CLS, T2P, APDO, and
PSRS open; CS, EA_DIS, APD, EMPS, AGND and GND connected to RTN; FB, LINEUV and DTHR connected
to VB; CVB = CVBG = 0.1 μF; CVCC = 1 μF; CSST = 0.047 μF; RREF = 49.9 kΩ; –40°C ≤ TJ ≤ 125°C. Positive
currents are into pins unless otherwise noted. Typical values are at 25°C.
VVCC-RTN = 0 V, all voltages referred to VVSS unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
RTN, GND and VCC open, VVDD = 30 V, Measure
IVDD
IVDD_OFF
MPS
Off-state current
730
µA
MPS total VSS current EMPS open, inrush delay has completed, 0 mA ≤
for Type 1-2 PSE IRTN ≤ 10 mA, measure IVSS
IMPSL
10
16.25
26.2%
76
12.5
19
15.5
21.5
26.9%
87
mA
mA
MPS total VSS current EMPS open, inrush delay has completed, 0 mA ≤
IMPSH
for Type 3-4 PSE
IRTN ≤ 16 mA, measure IVSS
MPS pulsed current
duty-cycle
EMPS open
26.6%
81.5
225
MPS pulsed mode duty MPS pulsed current ON
cycle for Type 1-2 PSE time
tMPSL
EMPS open
EMPS open
ms
ms
MPS pulsed current
OFF time
245
MPS pulsed current
duty-cycle, no pulse
stretching
EMPS open
EMPS open
2.9%
7.2
3.0%
7.7
3.1%
8.1
MPS pulsed current ON
time, no pulse
stretching
tMPSH
ms
MPS pulsed mode duty-
cycle for Type 3-4 PSE
MPS pulsed current
OFF time
EMPS open
EMPS open
238
54
250
57
265
62
ms
ms
MPS pulsed current ON
time stretching limit
THERMAL SHUTDOWN
Turnoff temperature
Hysteresis(2)
148
158
15
168
°C
°C
(1) The hysteresis tolerance tracks the rising threshold for a given device.
(2) These parameters are provided for reference only.
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7.7 Typical Characteristics
12.5
0.96
0.95
0.94
0.93
0.92
0.91
0.9
10
7.5
5
TJ = -40èC
TJ = 25èC
TJ = 125èC
2.5
0
1
2
3
4
VDD-VSS Voltage (V)
5
6
7
8
9
10
-50
-25
0
25
50
75
100
125
Junction Temperature (èC)
D001
D003
Figure 7-1. Detection Bias Current vs Voltage
Figure 7-2. PoE Current Limit vs Temperature
0.5
1000
950
900
850
800
750
700
650
0.45
0.4
0.35
0.3
TJ = -40èC
TJ = 25èC
TJ = 125èC
600
550
500
0.25
0.2
-50
-25
0
25
50
75
100
125
25
30
35
40 45
VDD-VSS Voltage (V)
50
55
60
Junction Temperature (èC)
D004
D005
Figure 7-3. Pass FET Resistance vs Temperature
Figure 7-4. VDD Supply Current vs Voltage
35
34
33
32
31
30
29
28
27
26
25
35
34
33
32
31
30
29
28
27
26
25
VVCC = 11.7 V
TJ = -40èC
TJ = 25èC
VVCC = 6.8 V
TJ = -40èC
TJ = 25èC
24
23
22
21
20
24
23
22
21
20
TJ = 125èC
TJ = 125èC
15
20
25
30
VDD-RTN Voltage (V)
35
40
45
50
55
60
10
15
20
25
VDD-RTN Voltage (V)
30
35
40
45
50
55
D006
D007
Figure 7-5. Converter Startup Current vs VDD Input Figure 7-6. Converter Startup Current vs VDD Input
Voltage
Voltage
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13
12.5
12
65
60
55
50
45
40
35
30
25
20
15
10
5
11.5
11
10.5
10
9.5
9
TJ = -40èC
TJ = 25èC
TJ = 125èC
8.5
8
0
0
3
6
9
12
15
18
21
VCC Sourcing Current (mA)
24
27
30
0
50 100 150 200 250 300 350 400 450 500
I_STP Programmable Resistance (kW)
D008
D009
Figure 7-7. Converter Startup Voltage vs Current
Figure 7-8. Controller SST Soft Stop Sink Current
vs Programmed Resistance
3
2.9
2.8
2.7
2.6
2.5
2.4
2.3
2.2
450
400
RFRS = 37.4 kW
RFRS = 60.4 kW
RFRS = 301 kW
350
300
250
200
150
100
50
2.1
RFRS = 37.4 kW
2
RFRS = 60.4 kW
1.9
1.8
1.7
1.6
1.5
RFRS = 301 kW
0
9
9.75
10.5
11.25 12
VCC Voltage (V)
12.75
13.5
-50
-25
0
25
50
75
100
125
Junction Temperature (èC)
D010
D011
Figure 7-9. Controller Bias Current vs Voltage
Figure 7-10. Switching Frequency vs Temperature
800
81
80.5
80
RFRS = 37.4 kW
600
400
200
0
RFRS = 60.4 kW
79.5
RFRS = 301 kW
79
78.5
78
77.5
77
76.5
76
0
5
10
15
20
25
30
35
40
45
50
-50
-25
0
25
50
75
100
125
Programmable Conductance (106/RFRS (W-1
)
Junction Temperature (èC)
D012
D013
Figure 7-11. Switching Frequency vs Programmed Figure 7-12. Maximum Duty Cycle vs Temperature
Resistance
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1.76
1.758
1.756
1.754
1.752
1.75
24
23.2
22.4
21.6
20.8
20
1.748
1.746
1.744
1.742
1.74
19.2
18.4
17.6
16.8
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Junction Temperature (èC)
Junction Temperature (èC)
D014
D015
Figure 7-13. Feedback Regulation Voltage vs
Temperature
Figure 7-14. Current Slope Compensation Current
vs Temperature
100
99.5
99
4
TJ = -40èC
3.6
TJ = 25èC
TJ = 125èC
3.2
2.8
2.4
2
98.5
98
97.5
97
1.6
1.2
0.8
0.4
0
96.5
96
95.5
95
-50
-25
0
25
50
75
100
125
0
0.5
1
1.5
2
COMP Voltage (V)
2.5
3
3.5
4
4.5
5
Junction Temperature (èC)
D016
D019
Figure 7-15. Blanking Period vs Temperature
Figure 7-16. Error Amplifier Source Current
20
18
16
14
12
10
8
100
TJ = -40èC
TJ = 25èC
TJ = 125èC
90
80
70
60
50
40
30
20
10
0
6
TJ = -40èC
TJ = 25èC
TJ = 125èC
4
2
0
-10
-20
100
1k
10k 100k
Frequency (Hz)
1M
5M
0
0.4 0.8 1.2 1.6
2
COMP Voltage (V)
2.4 2.8 3.2 3.6
4
D021
D020
Figure 7-18. Error Amplifier Gain vs Frequency
Figure 7-17. Error Amplifier Sink Current
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135
120
105
90
75
60
45
30
15
0
TJ = -40èC
TJ = 25èC
TJ = 125èC
100
1k
10k 100k
Frequency (Hz)
1M
5M
D022
Figure 7-19. Error Amplifier Phase vs Frequency
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8 Detailed Description
8.1 Overview
The TPS23731 device is a 45-pin integrated circuit that contains all of the features needed to implement a single
interface IEEE 802.3bt Type 3 Class 1-4 and IEEE802.3at powered device (PD), combined with a current-mode
DC-DC controller optimized for flyback switching regulator design. The TPS23731 applies to flyback converter
applications, also supporting the use of primary side control.
Basic PoE PD functionality supported includes detection, hardware classification, and inrush current limit during
startup. DC-DC converter features include startup function and current mode control operation. The TPS23731
device integrates a low 0.3-Ω internal switch to minimize heat dissipation and maximize power utilization.
A number of input voltage Oring options or input voltage ranges are also supported by use of APD input.
The TPS23731 device contains several protection features such as thermal shutdown, current limit foldback, and
a robust 100-V internal return switch.
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8.2 Functional Block Diagram
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8.3 Feature Description
See Figure 9-1 for component reference designators (RCS for example ), and Electrical Characteristics: DC-DC
Controller Section for values denoted by reference (VCSMAX for example). Electrical Characteristic values take
precedence over any numerical values used in the following sections.
8.3.1 CLS Classification
An external resistor (RCLS in Figure 9-1 ) connected between the CLS pin and VSS provides a classification
signature to the PSE. The controller places a voltage of approximately 1.25 V across the external resistor
whenever the voltage differential between VPD and VSS lies from about 11 V to 22 V. The current drawn by this
resistor, combined with the internal current drain of the controller and any leakage through the internal pass
MOSFET, creates the classification current. Table 8-1 lists the external resistor values required for each of the
PD power ranges defined by IEEE802.3at. The maximum average power drawn by the PD, plus the power
supplied to the downstream load, should not exceed the maximum power indicated in Table 8-1. The TPS23731
supports class 0 – 4 power levels. Holding APD high disables the classification signatures.
Table 8-1. Class Resistor Selection
POWER AT PD PI
CLASS
RESISTOR (Ω)
MINIMUM (W)
0.44
MAXIMUM (W)
12.95
0
1
2
3
4
806
130
69.8
46.4
32
0.44
3.84
3.84
6.49
6.49
12.95
12.95
25.5
8.3.2 DEN Detection and Enable
DEN pin implements two separate functions. A resistor (RDEN in Figure 9-1) connected between VDD and DEN
generates a detection signature whenever the voltage differential between VDD and VSS lies from
approximately 1.4 to 10.9 V. Beyond this range, the controller disconnects this resistor to save power. The IEEE
802.3bt and IEEE 802.3at standards specify a detection signature resistance, Rdetect from 23.75 kΩ to 26.25 kΩ,
or 25 kΩ ± 5%. TI recommends a resistor of 25.5 kΩ ± 1% for RDEN
.
Pulling DEN to VSS during powered operation causes the internal hotswap MOSFET and class regulator to turn
off. If the resistance connected between VDD and DEN is divided into two roughly equal portions, then the
application circuit can disable the PD by grounding the tap point between the two resistances, while
simultaneously spoiling the detection signature which prevents the PD from properly re-detecting.
8.3.3 APD Auxiliary Power Detect
The APD pin is used in applications that may draw power either from the Ethernet cable or from an auxiliary
power source. When a voltage of more than about 1.5 V is applied on the APD pin relative to RTN, the
TPS23731 does the following:
•
•
•
•
•
Internal pass MOSFET is turned off
Classification current is disabled
The LINEUV input is disabled
Maintain Power Signature (MPS) pulsed mode is disabled
T2P and APDO outputs are turned on (low state)
This also gives adapter source priority over the PoE. A resistor divider (RAPD1–RAPD2 in Figure 9-1) provides
system-level ESD protection for the APD pin, discharges leakage from the blocking diode (DA in Figure 9-1) and
provides input voltage supervision to ensure that switch-over to the auxiliary voltage source does not occur at
excessively low voltages. If not used, connect APD to RTN.
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8.3.4 Internal Pass MOSFET
RTN pin provides the negative power return path for the load. It is internally connected to the drain of the PoE
hotswap MOSFET, and the DC-DC controller return. RTN must be treated as a local reference plane (ground
plane) for the DC-DC controller and converter primary to maintain signal integrity.
Once VVDD exceeds the UVLO threshold, the internal pass MOSFET pulls RTN to VSS. Inrush limiting prevents
the RTN current from exceeding a nominal value of about 140 mA until the bulk capacitance (CBULK in Figure
9-1) is fully charged. Two conditions must be met to reach the end of inrush phase. The first one is when the
RTN current drops below about 90% of nominal inrush current at which point the current limit is changed to
0.925 A, while the second one is to ensure a minimum inrush delay period of 80 ms (tINR_DEL) from beginning of
the inrush phase. DC-DC converter switching is permitted once both inrush conditions are met, meaning that the
bulk capacitance is fully charged and the inrush period has been completed.
If VRTN - VVSS ever exceeds about 14.8 V for longer than 1.8 ms, then the PD returns to inrush limiting; note that
in this particular case, the second condition described above about inrush phase duration (80 ms) is not
applicable
8.3.5 T2P and APDO Indicators
The state of T2P is used to provide information relative to the allocated power. Table 8-2 lists T2P state
corresponding to various combinations of PSE Type, PD Class and allocated power. The allocated power is
determined by the number of classification cycles having been received. The PSE may also allocate a lower
power than what the PD is requesting, in which case there is power demotion. The APDO output can also be
used to indicate the presence of auxiliary power adapter via the APD input.
Table 8-2. T2P and Allocated Power Truth Table, with APD Low
NUMBER OF CLASS
CYCLES
PSE ALLOCATED
POWER AT PD (W)
PSE TYPE
PD CLASS
T2P(1)
1-4
1-4
1-4
1-4
2
0
1
2
3
4
4
1
1
12.95
3.84
6.49
12.95
25.5
25.5
HIGH
HIGH
HIGH
HIGH
LOW
LOW
1
1
2
3-4
2,3
(1) If APD is high, both T2P and APDO outputs become low.
During startup, the T2P output is enabled only once the DC-DC controller has reached steady-state, the soft-
start having been completed. This output will return to a high-impedance state in any of the following cases:
•
•
•
DC-DC controller is back to soft-start mode
DC-DC controller transitions to soft-stop mode
DC-DC controller shuts off due to reasons including VVCC falling below VCUVLO_F, or the PoE hotswap is in
inrush limit while APD is low
•
The device enters thermal shutdown
Note that in all these cases, as long as VDD-to-VSS voltage remains above the mark reset threshold, the
internal logic state of this signal is remembered such that this output will be activated accordingly after the soft-
start has completed. This circuit resets when the VDD-to-VSS voltage drops below the mark reset threshold. The
T2P can be left unconnected if not used.
8.3.6 DC-DC Controller Features
The TPS23731 device DC-DC controller implements a typical current-mode control as shown in Functional Block
Diagram. Features include oscillator, overcurrent and PWM comparators, current-sense blanker, soft-start, soft-
stop and gate driver. In addition, an internal current-compensation ramp generator, frequency synchronization
logic, built-in frequency dithering functionality, thermal shutdown, and start-up current source with control are
provided.
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The TPS23731 is optimized for isolated converters, supporting the use of PSR (flyback configuration) and
optocoupler feedback .
To support PSR, the TPS23731 includes an internal error amplifier, and the voltage feedback is from the bias
winding.
If optocoupler feedback is used, the error amplifier is disabled (by use of EA_DIS input). In this case, the
optocoupler output directly drives the COMP pin which serves as a current-demand control to the PWM.
In both cases, the COMP signal is directly fed to a 5:1 internal resistor divider and an offset of VZDC/5 (~0.3 V)
which defines a current-demand control for the pulse width modulator (PWM). A VCOMP below VZDC stops
converter switching, while voltages above (VZDC + 5 × (VCSMAX + VSLOPE)) does not increase the requested peak
current in the switching MOSFET.
The internal start-up current source and control logic implement a bootstrap-type startup. The startup current
source charges CVCC from VDD and maintain its voltage when the converter is disabled or during the soft-start
period, while operational power must come from a converter (bias winding) output.
The bootstrap source provides reliable start-up from widely varying input voltages, and eliminates the continual
power loss of external resistors.
The peak current limit does not have duty cycle dependency unless RS is used as shown in Figure 8-2 to
increase slope compensation. This makes it easier to design the current limit to a fixed value.
The DC-DC controller has an OTSD that can be triggered by heat sources including the VB regulator, GATE
driver, bootstrap current source, and bias currents. The controller OTSD turns off VB, the switching FET, resets
the soft-start generator, and forces the VCC control into an undervoltage state.
8.3.6.1 VCC, VB, VBG and Advanced PWM Startup
The VCC pin connects to the auxiliary bias supply for the DC-DC controller. The switching MOSFET gate driver
draws current directly from the VCC pin. VB and VBG outputs are regulated down from VCC voltage, the former
providing power to the internal control circuitry and external feedback optocoupler (when in use), and the latter
providing power to the switching FET gate predriver circuit. A startup current source from VDD to VCC
implements the converter bootstrap startup. VCC must receive power from an auxiliary source, such as an
auxiliary winding on the flyback transformer, to sustain normal operation after startup.
The startup current source is turned on during the inrush phase, charging CVCC and maintaining its voltage, and
it is turned off only after the DC-DC soft-start cycle has been completed, which occurs when the DC-DC
converter has ramped up its output voltage and VSST has exceed approximately 2.1 V (VSTUOF), as shown in
Figure 8-1. Internal loading on VCC, VB and VBG is initially minimal while CVCC charges, to allow the converter
to start. Due to the high current capability of the startup source, the recommended capacitance at VCC is
relatively small, typically 1 μF in most applications.
Once VVCC falls below its UVLO threshold (VCUVLO_F, approximately 6.1 V), the converter shuts off and the
startup current source is turned back on, initiating a new PWM startup cycle.
If however a VVCC fall (below approximately 7.1 V) is due to a light load condition causing temporary switching
stop, the startup is immediately and for a short period turned back on to bring VCC voltage back up, with no
converter interruption.
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tinrush max
PSE
PD
Operational Mode
PSE Inrush
tinrush min
VCC Startup Source ON
End of Soft-Start, Startup source
turned off
PD + Power Supply Fully
Operational
HSW cap
recharge
Soft Start
Wait
High current startup is ON for the whole soft-start
cycle to allow low VCC capacitance
Ensures interoperability with
PSE inrush limit
Figure 8-1. Advanced Startup
Note that the startup current source is also turned on while in soft-stop mode.
8.3.6.2 CS, Current Slope Compensation and blanking
The current-sense input for the DC-DC converter should be connected to the high side of the current-sense
resistor of the switching MOSFET. This voltage drives the current limit comparator and the PWM comparator
(see Block Diagram of DC-DC controller). A leading-edge blanking circuit prevents MOSFET turn-on transients
from falsely triggering either of these comparators. During the off time, and also during the blanking time that
immediately follows, the CS pin is pulled to AGND through an internal pulldown resistor.
The current limit comparator terminates the on-time portion of the switching cycle as soon as VCS exceeds
approximately 250 mV (VCSMAX) and the leading edge blanking interval has expired. If the converter is not in
current limit, then either the PWM comparator or the maximum duty cycle limiting (DMAX) circuit terminates the
on time.
Current-mode control requires addition of a compensation ramp to the sensed inductive (transformer or inductor)
current for stability at duty cycles near and over 50%. The TPS23731 provides an internal slope compensation
circuit which generates a current that imposes a voltage ramp at the positive input of the PWM comparator to
suppress sub-harmonic oscillations. This current flows out of the CS pin. If desired, the magnitude of the slope
compensation can be increased by the addition of an external resistor RS (see Figure 8-2) in series with the CS
pin. It works with ramp current (IPK = ISL-EX, approximately 20 μA) that flows out of the CS pin when the MOSFET
is on. The IPK specification does not include the approximately 2-μA fixed current that flows out of the CS pin.
The TPS23731 has a maximum duty cycle limit of 78%, permitting the design of wide input-range converters with
a lower voltage stress on the output rectifiers. While the maximum duty cycle is 78%, converters may be
designed that run at duty cycles well below this for a narrower, 36-V to 57-V range.
Most current-mode control papers and application notes define the slope compensation values in terms of
VPP/TS (peak ramp voltage / switching period); however, Electrical Characteristics: DC-DC Controller Section
specifies the slope peak (VSLOPE) based on the maximum duty cycle. Assuming that the desired slope, VSLOPE-D
(in mV/period), is based on the full period, compute RS per Equation 1 where VSLOPE, DMAX, and ISL-EX are from
Electrical Characteristics: DC-DC Controller Section with voltages in mV, current in μA, and the duty cycle is
unitless (for example, DMAX = 0.78).
VSLOPE (mV)
:
;
BVSLOP E_D mV F @
W
AC
DMAX
: ;
RS 3 =
× 1000
ISL_EX (JA)
(1)
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GATE
CS
RS
RCS
CS
Figure 8-2. Additional Slope Compensation
The TPS23731 blanker timing is precise enough that the traditional R-C filters on CS can be eliminated. This
avoids current-sense waveform distortion, which tends to get worse at light output loads. There may be some
situations or designers that prefer an R-C approach, for example if the presence of RS causes increased noise,
due to adjacent noisy signals, to appear at CS pin. The TPS23731 provides a pulldown on CS (~400 Ω) during
the GATE OFF-time to improve sensing when an R-C filter must be used, by reducing cycle-to-cycle carry-over
voltage on CS.
Routing between the current-sense resistor and the CS pin should be short to minimize cross-talk from noisy
traces such as the gate drive signal and the CP signal.
8.3.6.3 COMP, FB, EA_DIS, CP, PSRS and Opto-less Feedback
The TPS23731 DC-DC controller implements current-mode control as shown in Functional Block Diagram, using
internal (via pins FB input and COMP output, with EA_DIS pulled low) or external (via COMP input, with EA_DIS
open) voltage control loop error amplifier to define the input reference voltage of the current mode control
comparator which determines the switching MOSFET peak current.
VCOMP below VZDC causes the converter to stop switching. The maximum (peak) current is requested at
approximately (VZDC + 5 × (VCSMAX + VSLOPE)). The AC gain from COMP to the PWM comparator is typically 0.2.
In flyback applications and with the internal error amplifier enabled, the TPS23731 DC-DC controller can operate
with feedback from an auxiliary winding of the flyback power transformer to achieve primary side regulation
(PSR), eliminating the need for external shunt regulator and optocoupler. One noteworthy characteristic of this
PSR is that it operates with continuous (DC) feedback, enabling better optimization of the power supply, and
resulting in significantly lower noise sensitivity.
When combined with secondary-side synchronous rectification (with PSRS open), the opto-less operation of the
TPS23731 is achieved with a unique approach which basically consists in actively cancelling (through the use of
CP output) the leading-edge voltage overshoot (causing the feedback capacitor to peak-charge) generated by
the transformer winding. When combined with a correctly designed power transformer, less than ±1.5% load
regulation (typical) over the full output current range becomes achievable in applications making use of
secondary-side synchronous rectifiers. Operation is in continuous conduction mode (CCM), also enabling multi-
output architectures.
Opto-less operation of the TPS23731 also applies (with PSRS pulled low) to single-output flyback converter
applications where a secondary-side diode rectifier is used. In typical 12-V output application and when
combined with a correctly designed power transformer, ~±3% load regulation over a wide (< 5% to 100%) output
current range can be achieved.
In applications where the internal error amplifier is disabled, the COMP pin receives the control voltage typically
from a TL431 or TLV431 shunt regulator driving an optocoupler, using VB pin as a pull up source, although other
configurations are possible.
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8.3.6.4 FRS Frequency Setting and Synchronization
The FRS pin programs the (free-running) oscillator frequency, and may also be used to synchronize the
TPS23731 converter to a higher frequency. The internal oscillator sets the maximum duty cycle and controls the
current-compensation ramp circuit, making the ramp height independent of frequency. RFRS must be selected
per Equation 2.
15000
RFRS (k3) =
fSW (kHz)
(2)
The TPS23731 may be synchronized to an external clock to eliminate beat frequencies from a sampled system,
or to place emission spectrum away from an RF input frequency. Synchronization may be accomplished by
applying a short pulse ( > 25 ns) of magnitude VSYNC to FRS as shown in Figure 8-3. RFRS must be chosen so
that the maximum free-running frequency is just below the desired synchronization frequency. The
synchronization pulse terminates the potential ON-time period, and the OFF-time period does not begin until the
pulse terminates. A short pulse is preferred to avoid reducing the potential ON-time.
Figure 8-3 shows examples of nonisolated and transformer-coupled synchronization circuits. RT reduces noise
susceptibility for the isolation transformer implementation. The FRS node must be protected from noise because
it is high impedance.
Synchronization
Synchronization
Pulse
FRS
Pulse
FRS
47pF
47pF
1000pF
TSYNC
VSYNC
TSYNC
1:1
VSYNC
Copyright © 2016, Texas Instruments Incorporated
Figure 8-3. Synchronization
8.3.6.5 DTHR and Frequency Dithering for Spread Spectrum Applications
The international standard CISPR 22 (and adopted versions) is often used as a requirement for conducted
emissions. Ethernet cables are covered as a telecommunication port under section 5.2 for conducted emissions.
Meeting EMI requirements is often a challenge, with the lower limits of Class B being especially hard. Circuit
board layout, filtering, and snubbing various nodes in the power circuit are the first layer of control techniques. A
more detailed discussion of EMI control is presented in Practical Guidelines to Designing an EMI Compliant PoE
Powered Device With Isolated Flyback, SLUA469. Additionally, IEEE 802.3at sections 33.3 and 33.4 and IEEE
802.3bt sections 145.3 and 145.4 have requirements for noise injected onto the Ethernet cable based on
compatibility with data transmission.
A technique referred to as frequency dithering can also be used to provide additional EMI measurement
reduction. The switching frequency is modulated to spread the narrowband individual harmonics across a wider
bandwidth, thus lowering peak measurements.
Fully programmable frequency dithering is a built-in feature of the TPS23731. The oscillator frequency can be
dithered by connecting a capacitor from DTHR to RTN and a resistor from DTHR to FRS. An external capacitor,
CDTR (Figure 9-1), is selected to define the modulation frequency fm. This capacitor is being continuously
charged and discharged between slightly less than 0.5 V and slightly above 1.5 V by a current source/sink
equivalent to ~3x the current through FRS pin. CDTR value is defined according to:
3
W
RFRS (3)
CDTR
=
2.052 × fm (Hz)
(3)
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fm should always be higher than 9 kHz, which is the resolution bandwidth applied during conducted emission
measurement. Typically, fm should be set to around 11 kHz to account for component variations.
The resistor RDTR is used to determine ∆f, which is the amount of dithering, and its value is determined
according to:
0.513 × RFRS (3)
RDTR (3) =
%DTHR
(4)
For example, a 13.2% dithering with a nominal switching frequency of 250 kHz results in frequency variation of
±33 kHz.
8.3.6.6 SST and Soft-Start of the Switcher
Converters require a soft-start to prevent output overshoot on startup. In PoE applications, the PD also needs
soft-start to limit its input current at turn on below the limit allocated by the power source equipment (PSE).
For flyback applications using primary-side control, the TPS23731 provides closed loop controlled soft-start,
which applies a slowly rising ramp voltage to a second control input of the error amplifier. The lower of the
reference input and soft-start ramp controls the error amplifier, allowing the output voltage to rise in a smooth
monotonic fashion.
In all other applications where secondary-side regulation is used, the TPS23731 provides a current-loop soft-
start, which controls the switching MOSFET peak current by applying a slowly rising ramp voltage to a second
PWM control input. The lower of COMP-derived current demand and soft-start ramp controls the PWM
comparator. Note that in this case there is usually a (slower) secondary-side soft-start implemented with the
typical TL431 or TLV431 error amplifier to complement the action of the primary-side soft-start.
The soft-start period of the TPS23731 is adjustable with a capacitor between SST and RTN. During soft-start,
CSST (Figure 9-1) is being charged from less than 0.2 V to 2.45 V by a ~10µA current source. Once VSST has
exceeded approximately 2.1 V (VSTUOF), the VCC startup is also turned off.
The actual control range of the primary-side closed-loop soft-start capacitor voltage is between 0.25V and 2V
nominally. Therefore, the soft-start capacitor value must be based on this control range and the required soft-
start period (tSS) according to:
:
;
ISSC JA x tSS (ms)
CSS (nF) =
(2 F 0.25)
(5)
The actual control range of the current-loop soft-start capacitor voltage is between 0.6V and 1.2V nominally.
Therefore, the soft-start capacitor value must be based on this control range and the required soft-start period
(tSS) according to:
:
;
ISSC JA x tSS (ms)
CSS (nF) =
(1.2 F 0.6)
(6)
Note that the VCC startup turns off only when 2.1 V is reached, allowing additional time for the secondary-side
soft-start to complete. For more details regarding the secondary-side soft start, refer to Application Information.
8.3.6.7 SST, I_STP, LINEUV and Soft-Stop of the Switcher
The soft-stop feature is provided by the TPS23731 to minimizes stress on switching power components caused
by power shutdown, allowing FET BOM cost reduction. Soft-stop action consists in discharging in a controlled
way the output capacitor of the converter, sending back the energy to the input bulk capacitor.
Once the LINEUV input detects that the input power source has been removed (while APD is also low), the SST
capacitor is discharged with a constant current, ramping down the switching MOSFET peak current. The SST
discharge current (ISSD_SP) is defined with RI_STP according to:
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1000
ISSD_SP (JA) =
:
RI_STP kÀ
;
(7)
To accelerate the impact of the soft-stop, the internal peak current limit threshold is also immediately stepped
down to approximately 50 mV at beginning of soft-stop.
8.3.7 Switching FET Driver - GATE
GATE is the gate drive outputs for the DC-DC converter's main switching MOSFET.
GATE's phase turns the main switch on when it transitions high, and off when it transitions low. It is also held low
when the converter is disabled.
8.3.8 EMPS and Automatic MPS
To maintain PSE power in situation of very low IRTN condition, the TPS23731 generates a pulsed current through
VSS pin with an amplitude adjusted such that its net current reaches a level high enough to maintain power.
The pulsed current amplitude (IMPSL, IMPSH) and duration (tMPSL, tMPSH) are automatically selected according to
PSE Type (1-2, 3-4), to maintain PSE power while minimizing power consumption. Auto-stretch feature is also
used to cancel the impact of system conditions (bulk capacitance and PoE cable impedance) on the effective
pulsed current duration. See Figure 8-4, where the illustrated pulsed current is coming out of the VSS pin, while
ILOAD is the DC current going into the RTN pin.
TMPS
Pulse
Stretching
IEEE IHold
ILoad
0 mA
IEEE IHold
TMPS
Unloaded power
supply
Measured IVSS
Stretches the pulse if necessary based on measured current
Adds only the extra current to reach IHold
Figure 8-4. Auto MPS
Note that prior to entering the MPS mode, a light load condition is detected on RTN pin with a deglitch time
period of approximately 5 ms.
8.3.9 VDD Supply Voltage
VDD connects to the positive side of the input supply. It provides operating power to the PD controller, allows
monitoring of the input line voltage and serves as the source of DC-DC converter startup current. If VVDD falls
below its UVLO threshold and goes back above it, or if a thermal shutdown resumes even if VVDD remains above
its UVLO threshold, the TPS23731 returns to inrush phase.
8.3.10 RTN, AGND, GND
RTN is internally connected to the drain of the PoE hotswap MOSFET, while AGND is the quiet analog reference
for the DC-DC controller return. GND is the power ground used by the flyback power FET gate driver and CP
output, and should be tied to AGND and RTN plane. The AGND / GND / RTN net should be treated as a local
reference plane (ground plane) for the DC-DC control and converter primary. The PAD_G exposed thermal pad
is internally connected to RTN pin.
8.3.11 VSS
VSS is the PoE input-power return side. It is the reference for the PoE interface circuits, and has a current-
limited hotswap switch that connects it to RTN. VSS is clamped to a diode drop above RTN by the hotswap
switch. The PAD_S exposed thermal pad is internally connected to VSS pin. This pad must be connected to VSS
pin to ensure proper operation.
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8.3.12 Exposed Thermal pads - PAD_G and PAD_S
PAD_G should be tied to a large RTN copper area on the PCB to provide a low resistance thermal path to the
circuit board.
PAD_S should be tied to a large VSS copper area on the PCB to provide a low resistance thermal path to the
circuit board. TI recommends maintaining a clearance of 0.025” between VSS and high-voltage signals such as
VDD.
8.4 Device Functional Modes
8.4.1 PoE Overview
The following text is intended as an aid in understanding the operation of the TPS23731, but it is not a substitute
for the actual IEEE 802.3bt or 802.3at standards. The IEEE 802.3bt standard is an update to IEEE 802.3-2018,
adding Clause 145 (PoE), including power delivery using all four pairs, high-power options, additional features to
reduce standby power consumption and enhanced classification.
Generally speaking, a device compliant to IEEE 802.3-2012 is referred to as a Type 1 (Class 0-3) or 2 (Class 4)
device, and devices with higher power and enhanced classification is referred to as Type 3 (Class 5, 6) or 4
(Class 7, 8) devices. Type 3 devices will also include Class 0-4 devices that are 4-pair capable. Standards
change and must always be referenced when making design decisions.
The IEEE 802.3at and 802.3bt standards define a method of safely powering a PD (powered device) over a
cable by power sourcing equipment (PSE), and then removing power if a PD is disconnected. The process
proceeds through an idle state and three operational states of detection, classification, and operation. There is
also a fourth operational state used by Type 3 and 4 PSEs, called "connection check", to determine if the PD has
same (single interface) or independent (dual interface or commonly referred to "dual-signature" in the
IEEE802.3bt standard) classification signature on each pairset. The PSE leaves the cable unpowered (idle state)
while it periodically looks to see if something has been plugged in; this is referred to as detection. The low power
levels used during detection and connection check are unlikely to damage devices not designed for PoE. If a
valid PD signature is present, the PSE may inquire how much power the PD requires; this is referred to as
classification. The PSE may then power the PD if it has adequate capacity.
Type 3 or Type 4 PSEs are required to do an enhanced hardware classification of Type 3 or 4 respectively. Type
2 PSEs are required to do Type 1 hardware classification plus a data-layer classification, or an enhanced Type 2
hardware classification. Type 1 PSEs are not required to do hardware or data link layer (DLL) classification. A
Type 3 or Type 4 PD must do respectively Type 3 or Type 4 hardware classification as well as DLL classification.
A Type 2 PD must do Type 2 hardware classification as well as DLL classification. The PD may return the
default, 13-W current-encoded class, or one of four other choices if Type 2, one of six other choices if Type 3,
and one of eight other choices if Type 4. DLL classification occurs after power-on and the Ethernet data link has
been established
Once started, the PD must present the maintain power signature (MPS) to assure the PSE that it is still present.
The PSE monitors its output for a valid MPS, and turns the port off if it loses the MPS. Loss of the MPS returns
the PSE to the idle state. Figure 8-5 shows the operational states as a function of PD input voltage.
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Shut-
down
Detect
Classify
Normal Operation
42.5
6.9
0
2.7
10.1 14.5
Mark
20.5
30
57
PI Voltage (V)
37
42
Normal Operation
Figure 8-5. Operational States
The PD input, typically an RJ-45 eight-lead connector, is referred to as the power interface (PI). PD input
requirements differ from PSE output requirements to account for voltage drops and operating margin. The
standard allots the maximum loss to the cable regardless of the actual installation to simplify implementation.
IEEE 802.3-2008 was designed to run over infrastructure including ISO/IEC 11801 class C (CAT3 per TIA/
EIA-568) that may have had AWG 26 conductors. IEEE 802.3at Type 2 and IEEE 802.3bt Type 3 cabling power
loss allotments and voltage drops have been adjusted for 12.5-Ω power loops per ISO/IEC11801 class D (CAT5
or higher per TIA/EIA-568, typically AWG 24 conductors). Table 8-3 shows key operational limits broken out for
the two revisions of the standard.
Table 8-3. Comparison of Operational Limits
POWER LOOP
RESISTANCE
(MAX)
STATIC PD INPUT VOLTAGE
PSE OUTPUT
POWER (MIN)
PSE STATIC OUTPUT
VOLTAGE (MIN)
PD INPUT
POWER (MAX)
STANDARD
POWER ≤ 13 W
POWER > 13 W
IEEE802.3-2012
802.3at (Type 1)
20 Ω
44 V
15.4 W
30 W
13 W
37 V – 57 V
37 V – 57 V
N/A
802.3bt (Type 3)
12.5 Ω
12.5 Ω
50 V
50 V
802.3at (Type 2)
802.3bt (Type 3)
25.5 W
42.5 V – 57 V
802.3bt (Type 3)
802.3bt (Type 4)
6.25 Ω (4-pair)
6.25 Ω (4-pair)
60 W
90 W
50 V
52 V
51 W
N/A
N/A
42.5 V - 57 V
41.2 V - 57 V
71.3 W
The PSE can apply voltage either between the RX and TX pairs (pins 1–2 and 3–6 for 10baseT or 100baseT), or
between the two spare pairs (4–5 and 7–8). Power application to the same pin combinations in 1000/2.5G/5G/
10GbaseT systems is recognized in IEEE 802.3bt. 1000/2.5G/5G/10GbaseT systems can handle data on all
pairs, eliminating the spare pair terminology. Type 1 and 2 PSEs are allowed to apply voltage to only one set of
pairs at a time, while Type 3 and 4 PSEs may apply power to one or both sets of pairs at a time. The PD uses
input diode or active bridges to accept power from any of the possible PSE configurations. The voltage drops
associated with the input bridges create a difference between the standard limits at the PI and the TPS23731
specifications.
A compliant Type 2, 3 or 4 PD has power management requirements not present with a Type 1 PD. These
requirements include the following:
1. Must interpret respectively Type 2, 3 or 4 hardware classification.
2. Must present hardware Class 4 during the first two classfication events, applicable to Type 2 and 4 PDs, as
well as to Type 3 PD with Class level 4 or higher.
3. If Type 3 Class 5-6 or Type 4 single interface PD, it must present hardware Class in the range of 0 to 3 during
the third and any subsequent classification events.
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4. Must implement DLL negotiation.
5. Must draw less than 400 mA from 50 ms until 80 ms after the PSE applies operation voltage (power up), if
Type 2 or 3, single interface PD. This covers the PSE inrush period, which is 75 ms maximum.
6. Must draw less than 800 mA total and 600 mA per pairset from 50 ms until 80 ms after the PSE applies
operation voltage (power up), if Type 4 (Class 7-8) single interface PD.
7. Must not draw more than 60 mA and 5 mA any time the input voltage falls below respectively 30 V and 10 V.
8. Must not draw more than 13 W if it has not received at least a Type 2 hardware classification or received
permission through DLL.
9. Must not draw more than 25.5 W if it has not received at least 4 classification events or received permission
through DLL.
10.Must not draw more than 51 W if it has not received at least 5 classification events or received permission
through DLL.
11.Must meet various operating and transient templates.
12.Optionally monitor for the presence or absence of an adapter.
As a result of these requirements, the PD must be able to dynamically control its loading, and monitor T2P for
changes. APDO can also be used in cases where the design needs to know specifically if an adapter is plugged
in and operational.
8.4.2 Threshold Voltages
The TPS23731 has a number of internal comparators with hysteresis for stable switching between the various
states as shown in Figure 8-5. Figure 8-6 relates the parameters in Electrical Characteristics PoE to the PoE
states. The mode labeled idle between classification and operation implies that the DEN, CLS, and RTN pins are
all high impedance. The state labeled Mark, which is drawn in dashed lines, is part of the Type 2-3-4 hardware
class state machine.
PD Powered
Idle
Classification
Mark
VDD-VSS
Detection
VCU_H
VCU_OFF
VCL_H
VCL_ON
VUVLO_H
VMSR
VUVLO_R
Note: Variable names refer to Electrical Characteristic
Table parameters
Figure 8-6. Threshold Voltages
8.4.3 PoE Start-Up Sequence
The waveforms of Figure 8-7 demonstrate detection, classification, and start-up from a Type 2 PSE with Class 4
hardware classification. The key waveforms shown are VVDD-VSS, VRTN-VSS, and IPI. IEEE802.3bt and IEEE
802.3at require a minimum of two detection levels; however, four levels are shown in this example. Four levels
guard against misdetection of a device when plugged in during the detection sequence.
VRTN to VSS falls as the TPS23731 charges CBULK following application of full voltage. In Figure 8-9, the
converter soft-start is also delayed until the end of inrush period.
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DC-DC enabled after
Startup delay
Inrush
IPI
VVDD-VSS
Class Mark
Detect
VRTN-VSS
Time: 50ms/div
Figure 8-7. PoE Start-Up Sequence
8.4.4 Detection
The TPS23731 is in detection mode whenever VVDD-V SS is below the lower classification threshold. When the
input voltage rises above VCL_ON, the DEN pin goes to an open-drain condition to conserve power. While in
detection, RTN is high impedance, almost all the internal circuits are disabled, and the DEN pin is pulled to VSS
.
An RDEN of 25.5 kΩ (1%), presents the correct signature. It may be a small, low-power resistor because it only
sees a stress of about 5 mW. A valid PD detection signature is an incremental resistance between 23.75 kΩ and
26.25 kΩ at the PI.
The detection resistance seen by the PSE at the PI is the result of the input bridge resistance in series with the
parallel combination of RDEN and the TPS23731 bias loading. The incremental resistance of the input diode
bridge may be hundreds of ohms at the very low currents drawn when 2.7 V is applied to the PI. The input bridge
resistance is partially cancelled by the effective resistance of the TPS23731 during detection.
8.4.5 Hardware Classification
Hardware classification allows a PSE to determine a PD’s power requirements before powering, and helps with
power management once power is applied. Type 2, 3, and 4 hardware classification permits high power PDs to
determine whether the PSE can support its high-power operation. The number of class cycles generated by the
PSE prior to turn on indicates to the PD if it allots the power requested or if the allocated power is less than
requested, in which case there is power demotion.
A Type 2 PD always presents Class 4 in hardware to indicate that it is a 25.5W device. A Class 5 or 6 Type 3 PD
presents Class 4 in hardware during the first two class events and it presents Class 0 or 1, respectively, for all
subsequent class events. A Class 7 or 8 Type 4 PD presents Class 4 in hardware during the first two class
events and it presents Class 2 or 3, respectively, for all subsequent class events. A Type 1 PSE will treat a Class
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4 to 8 device like a Class 0 device, allotting 13 W if it chooses to power the PD. A Type 2 PSE will treat a Class 5
to 8 device like a Class 4 device, allotting 25.5W if it chooses to power the PD. A Class 4 PD that receives a 2-
event class, a Class 5 or 6 PD that receives a 4-event class, or a Class 7 or 8 PD that receives a 5-event class,
understands that the PSE has agreed to allocate the PD requested power. In the case where there is power
demotion, the PD may choose to not start, or to start while not drawing more power than initially allocated, and
request more power through the DLL after startup. The standard requires a Type 2, 3 or 4 PD to indicate that it is
underpowered if this occurs. Startup of a high-power PD at lower power than requested implicitly requires some
form of powering down sections of the application circuits.
The maximum power entries in Table 8-1 determine the class the PD must advertise. The PSE may disconnect a
PD if it draws more than its stated class power, which may be the hardware class or a DLL-derived power level.
The standard permits the PD to draw limited current peaks that increase the instantaneous power above the
Table 8-1 limit; however, the average power requirement always applies.
The TPS23731 implements one- to two-event classification. RCLS resistor value defines the class of the PD. DLL
communication is implemented by the Ethernet communication system in the PD and is not implemented by the
TPS23731.
The TPS23731 disables classification above VCU_OFF to avoid excessive power dissipation. CLS voltage is
turned off during PD thermal limiting or when APD or DEN is active. The CLS output is inherently current-limited,
but should not be shorted to VSS for long periods of time.
Figure 8-8 shows how classification works for the TPS23731. Transition from state-to-state occurs when
comparator thresholds are crossed (see Figure 8-5 and Figure 8-6). These comparators have hysteresis, which
adds inherent memory to the machine. Operation begins at idle (unpowered by PSE) and proceeds with
increasing voltage from left to right. A 2-event classification follows the (heavy lined) path towards the bottom,
ending up with a low T2P along the lower branch that is highlighted. Once the valid path to the PSE detection is
broken, the input voltage must transition below the mark reset threshold to start anew.
Between
Ranges
UVLO
Falling
Class
Class
Class
UVLO
Rising
Operating
T2P
open-drain
Between
Ranges
Idle
Detect
TYPE 1 or 3 PSE
Hardware Class
Mark
Reset
Between
Ranges
Mark
Mark
PoE Startup Sequence
Between
Ranges
UVLO
Rising
Operating
T2P low
Class
TYPE 2 or 3 PSE
Hardware Class
UVLO
Falling
Figure 8-8. Up to Two-Event Class Internal States
8.4.6 Maintain Power Signature (MPS)
The MPS is an electrical signature presented by the PD to assure the PSE that it is still present after operating
voltage is applied. For a Type 1 or Type 2 PD, a valid MPS consists of a minimum dc current of 10 mA, or a 10-
mA pulsed current for at least 75 ms every 325 ms, and an AC impedance lower than 26.3 kΩ in parallel with
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0.05 μF. Only Type 1 and Type 2 PSEs monitor the AC MPS. A Type 1 or Type 2 PSE that monitors only the AC
MPS may remove power from the PD.
To enable applications with stringent standby requirements, IEEE802.3bt introduced a significant change
regarding the minimum pulsed current duration to assure the PSE will maintain power. This applies to all Type 3
and Type 4 PSEs, and the pulse duration is ~10% of what is required for Type 1 and 2 PSEs. The MPS current
amplitude requirement for Class 5-8 PDs have also increased to 16 mA at the PSE end of the ethernet cable.
If the current through the RTN-to-VSS path is very low, the TPS23731 automatically generates the MPS pulsed
current through the VSS pin, with an amplitude adjusted such that its net current reaches a level high enough to
maintain PSE power. The TPS23731 is also able to determine if the PSE is of Type 1-2 or Type 3-4,
automatically adjusting the pulsed current amplitude, duration and duty-cycle, while minimizing power
consumption. Note that the IEEE802.3bt requirement for the PD is applicable at the PSE end of the cable. That
means that depending the cable length and other parameters including the bulk capacitance, a longer pulse
duration may be required to ensure a valid MPS. For that purpose, the TPS23731 provides auto-stretch
capability which is used to cancel the impact of such system conditions on the effective pulsed current duration.
See Figure 8-4.
When APD is pulled high or when DEN is pulled to VSS (forcing the hotswap switch off), the DC MPS will not be
met. A PSE that monitors the DC MPS will remove power from the PD when this occurs.
8.4.7 Advanced Start-Up and Converter Operation
The internal PoE undervoltage lockout (UVLO) circuit holds the hotswap switch off before the PSE provides full
voltage to the PD. This prevents the converter circuits from loading the PoE input during detection and
classification. The converter circuits discharges CBULK, CVCC, CVB and CVBG while the PD is unpowered. Thus
VVDD-RTN will be a small voltage until just after full voltage is applied to the PD, as seen in Figure 8-7.
The PSE drives the PI voltage to the operating range once it has decided to power up the PD. When VVDD rises
above the UVLO turnon threshold (VUVLO-R, approximately 37.6 V) with RTN high, the TPS23731 enables the
hotswap MOSFET with an approximately 140-mA (inrush) current limit. See the waveforms of Figure 8-9 for an
example. Converter switching is disabled while CBULK charges and VRTN falls from VVDD to nearly VVSS
;
however, the converter start-up circuit is allowed to charge CVCC (the VB regulator also powers the internal
converter circuits as VVCC rises). Once the inrush current falls about 10% below the inrush current limit, the PD
current limit switches to the operational level (approximately 925 mA). Additionally, once the inrush period
duration has also exceeded approximately 84 ms (end of inrush phase), the converter switching is allowed to
start, once VVCC also goes above its UVLO (approximately 8.25 V).
Continuing the start-up sequence shown in Figure 8-9, once VVCC goes above its UVLO , the soft-start (SST)
capacitor is first discharged with controlled current (ISSD) below nominally 0.2 V (VSFST) if the discharge was not
already completed, then it is gradually recharged until it reaches ~0.25 V (VSSOFS in closed-loop mode) at which
point the converter switching is enabled, following the closed loop controlled soft-start sequence. Note that the
startup current source capability is such that it can fully maintain VVCC during the converter soft-start without
requiring any significant CVCC capacitance, in 48 V input applications. At the end of the soft-start period, more
specifically when SST voltage has exceeded ~2 V (VSTUOF), the startup current source is turned off. VVCC falls
as it powers the internal circuits including the switching MOSFET gate. If the converter control-bias output rises
to support VVCC before it falls to VCUVLO_F (~6.1 V), a successful start-up occurs. Figure 8-9 shows a small droop
in VVCC while the output voltage rises smoothly and a successful start-up occurs.
Figure 8-10 also illustrates similar scenario if optocoupler feedback is used instead of PSR. In this case, the
converter switching is enabled when VSST exceeds approximately 0.6 V (VSSOFS in peak current mode).
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50V/div
VVDD-RTN
Converter
starts
PI powered
Inrush
100mA/div
IPI
VVCC-RTN
Startup turn off,
T2P enabled
5V/div
5V/div
VOUT
Output Voltage
Inrush Delay
VSST
Soft Start
1V/div
Time: 20ms/div
Figure 8-9. Power Up and Start - Flyback with PSR
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50V/div
VVDD-RTN
Converter
starts
PI powered
Inrush
100mA/div
IPI
VVCC-RTN
Startup turn off
5V/div
5V/div
Secondary
Soft Start
dependent
Output Voltage
VOUT
Inrush Delay
Primary Ipeak
Soft Start
VSST
1V/div
Time: 20ms/div
Figure 8-10. Power Up and Start - with Opto Feedback
The converter shuts off when VVCC falls below its lower UVLO. This can happen when power is removed from
the PD, or during a fault on a converter output rail. When one output is shorted, all the output voltages fall
including the one that powers VCC. The control circuit discharges VCC until it hits the lower UVLO and turns off.
A restart initiates if the converter turns off and there is sufficient VDD voltage. This type of operation is
sometimes referred to as hiccup mode, which when combined with the soft-start provides robust output short
protection by providing time-average heating reduction of the output rectifier.
Figure 8-11 illustrates the situation when there is severe overload at the main output which causes VCC hiccup.
After VCC went below its UVLO due to the overload, the startup source is turned back on. Then, a new soft-start
cycle is reinitiated, the soft-start capacitor being first discharged with controlled current, introducing a short
pause before the output voltage is ramped up.
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VOUT overload
Converter
Turn off then restart
IPI
200mA/div
5V/div
Startup turn off
VVCC-RTN
VCC
UVLO
VSST
Soft Start
1V/div
5V/div
Output Voltage
VOUT
Time: 10ms/div
Figure 8-11. Restart Following Severe Overload at Main Output of PSR Flyback DC-DC Converter
Also, when a VCC fall occurs, the TPS23731 can differentiate between an overload and a light load condition.
For example a diode-rectified flyback with optocoupled feedback may have its VCC rail to fall in situation of light
load due to temporary switching stop. In this case, the output voltage has to be maintained and a soft-start would
not be acceptable. To address this case, if VVCC falls below approximately 7.1 V due to light load, the TPS23731
turns back on the startup immediately and for a short period of time to bring VCC voltage back up, and there is
no soft-start recycling.
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IOUT
VVCC-RTN
Startup turn on then off
VCUV
Startup turn on
for short time
5V/div
VCC falls due to
switching interruption
at light load
Vout is maintained, no soft
start recycling
VOUT
10V/div
Time: 10ms/div
Figure 8-12. Startup Operation if VCC Undervoltage is caused by Light Load Condition of Diode-rectified
Flyback DC-DC Converter
If VVDD-VSS drops below the lower PoE UVLO (VUVLO_F, approximately 32 V), the hotswap MOSFET is turned off,
but the converter still runs (unless LINEUV input is pulled low). The converter stops if VVCC falls below the
VCUVLO_F (~6.1 V), the hotswap is in inrush current limit, the SST pin is pulled to ground, or the converter is in
thermal shutdown.
8.4.8 Line Undervoltage Protection and Converter Operation
When the input power source is removed, there are circumstances where stress may occur on the power
components.
For example, situations where the output voltage capacitor may be able to back drive its secondary-side sync
MOSFET after the flyback converter switching has stopped completely, either temporarily or not. Such situation
could apply at power down or next soft-start.
To address this case, once the LINEUV voltage falls below VLIUVF, the TPS23731 transitions to soft-stop mode. It
turns on temporarily the startup to maintain VVCC, then uses the SST control to ramp down the switching
MOSFET peak current. As a result, the converter output is discharged in a controlled way, the energy of the
output capacitor being sent back to the input bulk capacitor. Also note that at beginning of soft-stop, the
TPS23731 temporarily forces the peak current to a low value (VCS maximum at approximately 50 mV), until SST
voltage becomes low enough to decrease it further. This advanced feature allows the soft-stop to immediately
start discharging the output capacitor, regardless of the output load level, minimizing any system tradeoffs for
optimum switching MOSFETs protection. See Figure 8-13.
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Power
down
VDD
LINEUV
Soft Stop begins
immediately at max
discharge current
VOUT
SST
CS
Figure 8-13. Soft-Stop Operation
Once the soft-stop operation has been completed and to avoid subsequent oscillations caused by the impact of
the energy transfer on the LINEUV voltage, an internal load (~7 mA) is applied on VDD for approximately 160
ms, before the converter is allowed to restart.
8.4.9 PD Self-Protection
IEEE802.3bt includes new PSE output limiting requirements for Type 3 and 4 operation to cover higher power
and 4-pair applications. Type 2, 3 and 4 PSEs must meet an output current vs time template with specified
minimum and maximum sourcing boundaries. The peak output current per each 2-pair may be as high as 50 A
for 10 μs or 1.75 A for 75 ms, and the total peak current becomes twice these values when power is delivered
over 4 pairs. This makes robust protection of the PD device even more important than it was in IEEE
802.3-2012.
The PD section has the following self-protection functions.
•
•
•
Hotswap switch current limit
Hotswap switch foldback
Hotswap thermal protection
The internal hotswap MOSFET of the TPS23731 is protected against output faults and input voltage steps with a
current limit and deglitched foldback. High stress conditions include converter output shorts, shorts from VDD to
RTN, or transients on the input line. An overload on the pass MOSFET engages the current limit, with VRTN-VSS
rising as a result. If VRTN rises above approximately 14.8 V for longer than approximately 1.8 ms, the current limit
reverts to the inrush limit, and turns the converter off, although there is no minimum inrush delay period (84 ms)
applicable in this case. The 1.8-ms deglitch feature prevents momentary transients from causing a PD reset,
provided that recovery lies within the bounds of the hotswap and PSE protection. Figure 8-14 shows an example
of recovery from a 15-V PSE rising voltage step. The hotswap MOSFET goes into current limit, overshooting to a
relatively low current, recovers to 925-mA full current limit, and charges the input capacitor while the converter
continues to run. The MOSFET did not go into foldback because VRTN-VSS was below 14.8 V after the 1.8-ms
deglitch.
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IPI
250mA/div
CBULK
completes charge
while converter
operates
VVSS-RTN ≈ -15V
10V/div
20V/div
VVDD-VSS
Time: 400us/div
Figure 8-14. Response to PSE Step Voltage
The PD control has a thermal sensor that protects the internal hotswap MOSFET. Conditions like start-up or
operation into a VDD to RTN short cause high power dissipation in the MOSFET. An overtemperature shutdown
(OTSD) turns off the hotswap MOSFET and class regulator, which are restarted after the device cools. The PD
restarts in inrush phase when exiting from a PD overtemperature event.
Pulling DEN to VSS during powered operation causes the internal hotswap MOSFET to turn off. This feature
allows a PD with secondary-side adapter ORing to achieve adapter priority. Take care with synchronous
converter topologies that can deliver power in both directions.
The hotswap switch is forced off under the following conditions:
•
•
•
•
VAPD above VAPDEN (approximately 1.5 V)
VDE N ≤ VPD_DIS when VVDD-VSS is in the operational range
PD over temperature
VVDD-VSS < PoE UVLO (approximately 32 V)
8.4.10 Thermal Shutdown - DC-DC Controller
The DC-DC controller has an OTSD that can be triggered by heat sources including the VB and VBG regulators,
GATE driver, startup current source, and bias currents. The controller OTSD turns off VB, VBG, the GATE driver,
and forces the VCC control into an under-voltage state.
8.4.11 Adapter ORing
Many PoE-capable devices are designed to operate from either a wall adapter or PoE power. A local power
solution adds cost and complexity, but allows a product to be used if PoE is not available in a particular
installation. While most applications only require that the PD operate when both sources are present, the
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TPS23731 device supports forced operation from either of the power sources. Figure 8-15 illustrates three
options for diode ORing external power into a PD. Only one option would be used in any particular design.
Option 1 applies power to the device input, option 2 applies power between the device PoE section and the
power circuit, and option 3 applies power to the output side of the converter. Each of these options has
advantages and disadvantages. A detailed discussion of the device and ORing solutions is covered in
application note Advanced Adapter ORing Solutions using the TPS23753, (SLVA306).
Low Voltage
Output
DEN
CLS
Power
Circuit
VSS
RTN
Adapter
Option 2
Adapter
Option 3
Adapter
Option 1
Figure 8-15. ORing Configurations
Preference of one power source presents a number of challenges. Combinations of adapter output voltage
(nominal and tolerance), power insertion point, and which source is preferred determine solution complexity.
Several factors contributing to the complexity are the natural high-voltage selection of diode ORing (the simplest
method of combining sources), the current limit implicit in the PSE, PD inrush, and protection circuits (necessary
for operation and reliability). Creating simple and seamless solutions is difficult if not impossible for many of the
combinations. However, the TPS23731 device offers several built-in features that simplify some combinations.
Several examples demonstrate the limitations inherent in ORing solutions. Diode ORing a 48-V adapter with PoE
(option 1) presents the problem that either source may have the higher voltage. A blocking switch would be
required to assure that one source dominates. A second example is combining a 12-V adapter with PoE using
option 2. The converter draws approximately four times the current at 12 V from the adapter than it does from
PoE at 48 V. Transition from adapter power to PoE may demand more current than can be supplied by the PSE.
The converter must be turned off while CIN capacitance charges, with a subsequent converter restart at the
higher voltage and lower input current. A third example is use of a 24-V adapter with ORing option 1. The PD
hotswap would have to handle two times the current, and have 1/4 the resistance (be 4 times larger) to dissipate
equal power.
The most popular preferential ORing scheme is option 2 with adapter priority. The hotswap MOSFET is disabled
when the adapter is used to pull APD high, blocking the PoE source from powering the output. This solution
works well with a wide range of adapter voltages, is simple, and requires few external parts. When the AC power
fails, or the adapter is removed, the hotswap switch is enabled. In the simplest implementation, the PD
momentarily loses power until the PSE completes its start-up cycle.
The DEN pin can be used to disable the PoE input when ORing with option 3. This is an adapter priority
implementation. Pulling DEN low, while creating an invalid detection signature, disables the hotswap MOSFET,
and prevents the PD from redetecting. This would typically be accomplished with an optocoupler that is driven
from the secondary side of the converter. Another option 3 alternative which does not require DEN optocoupler is
achievable by ensuring that the auxiliary voltage is always higher then the converter output; in this case, the
PSE power can then be maintained by use of the auto MPS function of the TPS23731.
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The IEEE standards require that the PI conductors be electrically isolated from ground and all other system
potentials not part of the PI interface. The adapter must meet a minimum 1500-Vac dielectric withstand test
between the output and all other connections for options 1 and 2. The adapter only needs this isolation for option
3 if it is not provided by the converter.
Adapter ORing diodes are shown for all the options to protect against a reverse-voltage adapter, a short on the
adapter input pins, and damage to a low-voltage adapter. ORing is sometimes accomplished with a MOSFET in
option 3.
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
9.1 Application Information
The TPS23731 supports power supply topologies that require a single PWM gate drive with current-mode
control. Figure 9-1 provides an example of a synchronous FET rectified primary-side-regulated flyback converter.
9.2 Typical Application
T1
TPS23731
VCC
+
RCL
CCL
DCL
CBULK
VDD
DEN
VOUT2
COUT2
RDEN
APDO
T2P
GATE
CS
0.1 ꢀF
58V
CLS
VSS
RCS
VOUT1
COUT
VCC
COMP
DCC
CCOMP
RCOMP
I_in
R1
APD
CVCC
FB
CCC2
LINEUV
FRS
RUV2
DA
CP
R2
SST
CSST
RDTR
EA_DIS
DTHR
VB
GND I_STP
RTN
PSRS
CVB
RAPD2
CDTR
RFRS
48V
Adapter
RI_STP
Figure 9-1. Basic TPS23731 Implementation
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9.2.1 Design Requirements
Selecting a converter topology along with a converter design procedure is beyond the scope of this application
section.
The TPS23731 has the flexibility to be used in high power density flyback topologies such as primary side
regulation synchronous or non-synchronous flyback.
Examples to help in programming the TPS23731 and additional design consideration are shown in Detailed
Design Procedure. For a more specific converter design example, refer to the EVM that is designed for the
design parameters in Table 9-1.
Table 9-1. Design Parameters
PARAMETER
Input voltage
TEST CONDITIONS
MIN TYPICAL
MAX UNIT
Power applied through PoE or adapter
0
30
57
57
V
V
V
Operating voltage
Adapter voltage
After startup
40
57
Rising input voltage at device terminals
Falling input voltage
—
40
Input UVLO
V
30.5
1.4
11.9
38
—
Detection voltage
At device terminals
10.1
23
V
V
Classification voltage At device terminals
Class 4
Class signature A
42
mA
DCDC Topology
Output Voltage
Output Current
Primary Side Regulated Synch Flyback
5
5
V
A
End-to-End Efficiency At full load
Switching Frequency
89
%
250
kHz
9.2.1.1 Detailed Design Procedure
9.2.1.1.1 Input Bridges and Schottky Diodes
Using Schottky diodes instead of PN junction diodes for the PoE input bridges will reduce the power loss by
about 30%. These are often used to maximize the efficiency when FET bridge architectures are not used.
Schottky diode leakage current and different input bridge architectures can impact the detection signature.
Setting reasonable expectations for the temperature range over which the detection signature is accurate is the
simplest solution. Adjusting RDEN slightly may also help meet the requirement.
A general recommendation for the input rectifiers are 2 A, 100-V rated discrete or bridge schottky diodes.
The allows the option of either a discrete schottky bridge or a FET-Diode bridge for 1-2% higher overall system
efficiency.
9.2.1.1.2 Input TVS Protection
A TVS, across the rectified PoE voltage must be used. TI recommends a SMAJ58A, or a part with equal to or
better performance, for general indoor applications. If an adapter is connected from VDD to RTN, as in ORing
option 2 above, voltage transients caused by the input cable inductance ringing with the internal PD capacitance
can occur. Adequate capacitive filtering or a TVS must limit this voltage to be within the absolute maximum
ratings. Outdoor transient levels or special applications require additional protection.
ESD events between the PD power inputs and converter output, cause large stresses in the hotswap MOSFET if
the input TVS becomes reverse biased and transient current around the TPS23731 is blocked. A SMAJ58A is a
good initial selection between RTN (cathode) and VSS (anode).
9.2.1.1.3 Input Bypass Capacitor
The IEEE 802.3bt standard specifies an input bypass capacitor (from VDD to VSS) of 0.05 μF to 0.12 μF. Typically
a 0.1-μF, 100-V, 10% ceramic capacitor is used.
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9.2.1.1.4 Detection Resistor, RDEN
The IEEE 802.3bt standard specifies a detection signature resistance, RDEN from 23.7 kΩ to 26.3 kΩ, or 25 kΩ ±
5%. Choose an RDEN of 25.5 kΩ.
9.2.1.1.5 Classification Resistor, RCLS
.
Connect a resistor from to VSS to program the classification current according to the IEEE 802.3bt standard. The
class power assigned should correspond to the maximum average power drawn by the PD during operation.
Select RCLSx according to Table 8-1.
9.2.1.1.6 APD Pin Divider Network, RAPD1, RAPD2
The APD pin can be used to disable the TPS23731 device internal hotswap MOSFET giving the adapter source
priority over the PoE source. An example calculation is provided, see SLVA306.
9.2.1.1.7 Setting Frequency (RFRS) and Synchronization
The converter switching frequency is set by connecting RFRS from the FRS pin to AGND.
As an example:
1. Optimal switching frequency (fSW) for isolated PoE applications is 250 kHz.
2. Compute RFRS per Equation 2.
3. Select 60.4 kΩ.
The TPS23731 device may be synchronized to an external clock to eliminate beat frequencies from a sampled
system, or to place emission spectrum away from an RF input frequency. Synchronization may be accomplished
by applying a short pulse (TSYNC) of magnitude VSYNC to FRS as shown in Figure 8-3. RFRS should be chosen so
that the maximum free-running frequency is just below the desired synchronization frequency. The
synchronization pulse terminates the potential on-time period, and the off-time period does not begin until the
pulse terminates. The pulse at the FRS pin should reach between 2.5 V and VB, with a minimum width of 25 ns
(above 2.5 V) and rise and fall times less than 10 ns. The FRS node should be protected from noise because it
is high-impedance. An RT on the order of 100 Ω in the isolated example reduces noise sensitivity and jitter.
9.2.1.1.8 Bias Supply Requirements and CVCC
Advanced startup in the TPS23731 allows for relatively low capacitance on the bias circuit. It is recommended to
use a 1-µF 10% 25-V ceramic capacitor on CVCC
.
9.2.1.1.9 APDO, T2P Interface
The APDO, T2P pins are active low, open-drain outputs which give an indication about the PSE allocated power.
Optocouplers can interface these pins to circuitry on the secondary side of the converter. A high-gain
optocoupler and a high-impedance (for example, CMOS) receiver are recommended. Please see the as an
example circuit. Below is an example design calculation.
1. Let VCC = 12-V, VOUT = 5-V, = 10-kΩ, VTPx-OUT (low) = 400-mV maximum.
a. ITPx-OUT = 0.46 mA.
2. The optocoupler CTR will be needed to determine . A device with a minimum CTR of 300% at 5-mA LED bias
current is selected. CTR will also vary with temperature and LED bias current. The strong variation of CTR
with diode current makes this a problem that requires some iteration using the CTR versus IDIODE curve on
the optocoupler data sheet.
a. The approximate forward voltage of the optocoupler diode is 1.1 V from the data sheet.
b. ITPx-MIN = 1 mA and RTPx = 10.6 kΩ.
3. Select 10.7-kΩ resistor.
9.2.1.1.10 Output Voltage Feedback Divider, RAUX, R1,R2
R1, R2 and set the output voltage of the bias winding of the converter.
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VREFC R + R
(
)
1
2
VVCC
=
R 2
(8)
9.2.1.1.11 Frequency Dithering for Conducted Emissions Control
For optimum EMI performance, CDTR and RDTR should be calculated as described in DTHR and Frequency
Dithering for Spread Spectrum Applications.
These equations yield CDTR = 2.2 nF and RDTR = 235 kΩ where a 237-kΩ standard resistor can be used.
10 Power Supply Recommendations
The TPS23731 converter must be designed such that the input voltage of the converter is capable of operating
within the IEEE 802.3 protocol at the recommended input voltage as shown in Table 8-3 and the minimum
operating voltage of the adapter if applicable.
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11 Layout
11.1 Layout Guidelines
The layout of the PoE front end should follow power and EMI/ESD best practice guidelines. A basic set of
recommendations include:
•
Parts placement must be driven by power flow in a point-to-point manner; RJ-45, Ethernet transformer, diode
bridges, TVS and 0.1-μF capacitor, and TPS23731.
•
•
•
All leads should be as short as possible with wide power traces and paired signal and return.
There should not be any crossovers of signals from one part of the flow to another.
Spacing consistent with safety standards like IEC60950 must be observed between the 48-V input voltage
rails and between the input and an isolated converter output.
•
•
•
The TPS23731 should be located over split, local ground planes referenced to VSS for the PoE input and to
RTN for the switched output.
Large copper fills and traces should be used on SMT power-dissipating devices, and wide traces or overlay
copper fills should be used in the power path.
It is recommended having at least 8 vias (PAD_G) and 5 vias on (PAD_S) connecting the exposed thermal
pad through a top layer plane (2 oz. copper recommended) to a bottom VSS plane (2 oz. copper
recommended) to help with thermal dissipation.
11.2 Layout Example
A detailed PCB layout can be found in the user’s guide of the TPS23731EVM-095 that show the top and bottom
layer and assemblies as a reference for optimum parts placement.
11.3 EMI Containment
•
•
Use compact loops for dv/dt and di/dt circuit paths (power loops and gate drives).
Use minimal, yet thermally adequate, copper areas for heat sinking of components tied to switching nodes
(minimize exposed radiating surface).
•
Use copper ground planes (possible stitching) and top layer copper floods (surround circuitry with ground
floods).
•
•
•
•
•
•
Use 4 layer PCB if economically feasible (for better grounding).
Minimize the amount of copper area associated with input traces (to minimize radiated pickup).
Use Bob Smith terminations, Bob Smith EFT capacitor, and Bob Smith plane.
Use Bob Smith plane as ground shield on input side of PCB (creating a phantom or literal earth ground).
Use of ferrite beads on input (allow for possible use of beads or 0-Ω resistors).
Maintain physical separation between input-related circuitry and power circuitry (use ferrite beads as
boundary line).
•
•
•
Possible use of common-mode inductors.
Possible use of integrated RJ-45 jacks (shielded with internal transformer and Bob Smith terminations).
End-product enclosure considerations (shielding).
11.4 Thermal Considerations and OTSD
Sources of nearby local PCB heating should be considered during the thermal design. Typical calculations
assume that the TPS23731 is the only heat source contributing to the PCB temperature rise. It is possible for a
normally operating TPS23731 device to experience an OTSD event if it is excessively heated by a nearby
device.
11.5 ESD
ESD requirements for a unit that incorporates the TPS23731 have a much broader scope and operational
implications than are used in TI’s testing. Unit-level requirements should not be confused with reference design
testing that only validates the ruggedness of the TPS23731.
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation, see the following:
•
IEEE Standard for Information Technology … Part 3: Carrier sense multiple access with collision detection
(CSMA/CD) access method and physical layer specifications, IEEE Computer Society, IEEE 802.3™at
(Clause 33)
•
Information technology equipment – Radio disturbance characteristics – Limits and methods of
measurement, International Electrotechnical Commission, CISPR 22 Edition 5.2, 2006-03
Advanced Adapter ORing Solutions using the TPS23753, Eric Wright, TI, SLVA306
Practical Guidelines to Designing an EMI-Compliant PoE Powered Device With Isolated Flyback, Donald V.
Comiskey, TI, SLUA469
•
•
12.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.5 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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17-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS23731RMTR
ACTIVE
VQFN
RMT
45
3000 RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
TPS23731
DB0 WA1
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
18-Dec-2020
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TPS23731RMTR
VQFN
RMT
45
3000
330.0
16.4
5.25
7.25
1.45
8.0
16.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
18-Dec-2020
*All dimensions are nominal
Device
Package Type Package Drawing Pins
VQFN RMT 45
SPQ
Length (mm) Width (mm) Height (mm)
367.0 367.0 35.0
TPS23731RMTR
3000
Pack Materials-Page 2
PACKAGE OUTLINE
VQFN - 1 mm max height
RMT0045A
PLASTIC QUAD FLATPACK-NO LEAD
A
5.1
4.9
B
PIN 1 INDEX AREA
7.1
6.9
1 MAX
C
SEATING PLANE
0.08 C
0.05
0.00
2.9±0.1
PKG
(0.1) TYP
14
22
39X 0.4
13
23
1.4
1.3751
2.15±0.1
10
9
47
0.6
PKG
0.2
0.6
29
30
2X
5.2
1.4
2.1±0.1
46
0.5
0.3
35
45X
C
1
PIN 1 ID
(OPTIONAL)
45
36
0.25
0.15
45X
3.6
3.7±0.1
0.1
0.05
A B
C
4225180/A 08/2019
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for optimal thermal and mechanical performance.
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EXAMPLE BOARD LAYOUT
VQFN - 1 mm max height
RMT0045A
PLASTIC QUAD FLATPACK-NO LEAD
(3.7)
(3.6)
PKG
45X (0.2)
45X (0.6)
36
45
39X (0.4)
1
35
(2.205)
46
(1.4)
(2.1)
(R0.05)
TYP
(0.595)
30
29
PKG
(6.8) (5.2)
(0.2)
(0.55)
(0.6)
9
47
10
(1.375) (2.15)
(2.2)
(1.4)
23
13
(Ø0.2) VIA
TYP
14
22
(2.9)
(4.8)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 12X
0.05 MIN
ALL AROUND
0.05 MAX
ALL AROUND
SOLDER MASK
OPENING
METAL
EXPOSED METAL
SOLDER MASK
OPENING
EXPOSED METAL
METAL UNDER
SOLDER MASK
NON- SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4225180/A 08/2019
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
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EXAMPLE STENCIL DESIGN
VQFN - 1 mm max height
RMT0045A
PLASTIC QUAD FLATPACK-NO LEAD
(3.6)
PKG
45X (0.2)
45X (0.6)
6X (1.05)
36
45
39X (0.4)
6X (0.94)
35
1
(1.97)
46
(R0.05)
TYP
(0.83)
30
PKG
(6.8) (5.2)
29
(0.2)
(0.6)
9
(0.795)
4X (0.96)
10
13
47
(1.4)
(1.955)
METAL TYP
23
14
22
4X (1.27)
(4.8)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
PAD 46: 76%; PAD 47: 78%
SCALE: 12X
4225180/A 08/2019
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
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Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2020, Texas Instruments Incorporated
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