TPS2400DBVTG4_技术文档

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SLUS599 − JUNE 2004

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FEATURES

DESCRIPTION

D

Up to 100-V Overvoltage Protection

The TPS2400 overvoltage protection controller is

used with an external N-channel MOSFET to

isolate sensitive electronics from destructive

voltage spikes and surges. It is specifically

designed to prevent large voltage transients

associated with automotive environments (load

dump) from damaging sensitive circuitry. When

potentially damaging voltage levels are detected

by the TPS2400 the supply is disconnected from

the load before any damage can occur.

6.9-V Overvoltage Shutdown Threshold

3.0-V Undervoltage Shutdown Threshold

Overvoltage Turn-Off Time Less than 1.0 µs

External N-Channel MOSFET Driven by

Internal Charge Pump

1-mA Maximum Static Supply Current

5-Pin SOT−23 Package

−40_C to 85_C Ambient Temperature Range

Internal circuitry includes a trimmed band-gap

reference, oscillator, zener diode, charge pump,

comparator, and control logic. The TPS2400 is

designed for use with an external N-channel

MOSFET which are readily available in a wide

variety of voltages.

2.5-kV Human-Body-Model, 500-V CDM

Electrostatic Discharge Protection

APPLICATIONS

D

Cellular Phones

PDAs

Portable PCs

Media Players

Digital Cameras

GPS

FUNCTIONAL BLOCK DIAGRAM

VIN

5

High= Closed

Internal Rail

8 V

Enable

Charge Pump

UVLO

OVLO

+

5 µA

1.15 V

4

GATE

GND

2

18 V

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Copyright  2004, Texas Instruments Incorporated

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ꢙ ꢝ ꢚ ꢙꢒ ꢓꢧ ꢕꢔ ꢘ ꢠꢠ ꢞꢘ ꢖ ꢘ ꢗ ꢝ ꢙ ꢝ ꢖ ꢚ ꢢ

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1

www.ti.com

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SLUS599 − JUNE 2004

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1)

over operating free-air temperature range (unless otherwise noted)

TPS2400

−0.3 to 110

−0.3 to 22

−0.3 to 25

UNIT

Input voltage range, V

IN

V

IN

GATE (continuous)

V

Output voltage range, V

OUT

GATE (transient, < 10 µs, Duty Cycle < 0.1%)

Continuous total power dissipation

See dissipation rating table

−40 to 125

Operating junction temperature range, T

J

Operating free-air temperature range, T

−40 to 85

A

°C

Storage temperature range, T

stg

−65 to 150

Lead temperature soldering 1, 6 mm (1/16 inch) from case for 10 seconds

260

(1)

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only,

and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute−maximum−rated conditions for extended periods may affect device reliability. All voltages are with respect to GND.

DISSIPATION RATINGS

DERATING FACTOR

= 25°C

T

= 70°C

T = 85°C

A

PACKAGE

T < 25°C

A

T

POWER RATING

A

SOT−23

285 mW

2.85 mW/°C

155 mW

114 mW

RECOMMENDED OPERATING CONDITIONS

MIN

3.1

−40

NOM MAX

6.8

125

UNIT

Supply voltage at V

IN

V

Operating junction temperature

°C

ELECTROSTATIC DISCHARGE (ESD) PROTECTION

MIN

2.5

0.5

MAX

UNIT

Human Body Model

CDM

kV

ORDERING INFORMATION

PACKAGED DEVICES

T

QUANTITY PER REEL

A =

J

SOT23−5 (DBV)

TPS2400DBVR

TPS2400DBVT

3000

500

−40°C to 85°C

DBV PACKAGE

(TOP VIEW)

VIN

GATE

4

3

5

1

2

N/C

GND N/C

2

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ELECTRICAL CHARACTERISTICS

T

A

= −40°C to 85°C, T = −40°C to 125°C (unless otherwise noted)

J

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

V

= 3.1 V

= 5.0 V

= 6.5 V

= 100 V

rising

65

110

I(VIN)

95

135

550

3.0

180

220

1000

3.1

I

Input supply current, V

IN

µA

I(VIN)

UVLO

Undervoltage lockout upper threshold

Undervoltage lockout hysteresis

2.9

V

(upper)

85

6.7

100

6.9

115

7.1

mV

V

(hyst)

OVP

Overvoltage protection upper threshold

Overvoltage protection hysteresis

V

I(VIN)

rising

(upper)

135

150

165

mV

(hyst)

GATE DRIVE

V

= 3.1 V, V

= 7 V

= 10 V

I(VIN)

O(gate)

I

Gate sourcing current

3

10

µA

OSOURCE(gate)

= 5 V, V

O(gate)

I(VIN)

(1)

I

Gate sinking current

= 7.2 V, V

O(gate)

= 15 V

350

10

485

600

12

mA

OSINK(gate)

I(VIN)

= 3.1 V, I

= 1.0 µA

= 1.5µA

= 1.5 µA

I(VIN)

OSOURCE(gate)

= 5 V, I

16

19

V

Gate output high voltage

I(VIN)

OSOURCE(gate)

OH(gate)

= 6.5 V, I

OSOURCE(gate)

16

20

V

I(VIN)

V

Gate output high maximum voltage

Gate output low voltage

I

= 0 µA

20

OHMAX(gate)

OSOURCE(gate)

V

= 7.2 V, I

= 50 mA

1.0

OL(gate)

I(VIN)

OSINK(gate)

stepped from 0 V to 5 V,

= 1 nF

I(VIN)

0.1

0.9

1.5

15

0.6

3

Gate turn-on propogation delay, (50%

C

T

LOAD

I(VIN)

ON(prop)

ON(rise)

OFF

V

I(vin)

to V

O(gate)

= 1 V, R

= 10 MΩ)

LOAD

= 10 nF

ms

V

stepped from 0 V to 5V,

= 1 nF

6

Gate turn-on rise time, (V

= 1 V to

O(gate)

C

T

LOAD

I(VIN)

90% V = 10 MΩ)

R

O(gate) , LOAD

C

= 10 nF

55

V

stepped from 6 V to 8 V,

= 1 nF

0.25

Turn-off time, (50% V

step to

I(VIN)

LOAD

C

µs

LOAD

V

= 6.9 V, R

= 10 meg Ω)

O(GATE)

C

= 10 nF

0.5

LOAD

(1)

Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.

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SLUS599 − JUNE 2004

TERMINAL FUNCTIONS

Terminals

I/O

Description

Output gate drive for an external N-channel MOSFET.

Name

GATE

No.

4

O

−

I

GND

NC

2

Ground

1

No internal connection

Input voltage

NC

3

VIN

5

DETAILED DESCRIPTION

Undervoltage and Overvoltage Comparators and Logic

When the comparators detect that V

on the external N-channel MOSFET. When V

undervoltage level, the GATE output is driven low.

is within the operating window, the GATE output is driven high to turn

CC

goes above the set overvoltage level, or below the set

CC

Charge pump

An internal charge pump supplies power to the GATE drive circuit and provides the necessary voltage to pull

the gate of the MOSFET above the source.

Zener Diodes

Limit internal power rails to 8.0 V and GATE output to 18 V.

Shut-Off MOSFET

When an undervoltage or overvoltage event occurs, this MOSFET is turned on to pull down the gate of the

external N-channel MOSFET, thus isolating the load from the incoming transient.

I

IN

OUT

FDC3616N

V

IN

V

OUT

5

VIN

TPS2400

GATE 4

GND

2

UDG−04056

Figure 1. Application Diagram

4

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APPLICATION INFORMATION

Overvoltage Protection

An overvoltage condition is commonly created in these situations.

D

Unplugging a wall adapter from an AC outlet. Energy stored in the transformer magnetizing inductance is

released and spikes the output voltage.

D

Powering an appliance with the wrong voltage adapter (user error)

Automotive load dump due to ignition, power windows, or starter motor (for example)

An AC power-line transient

Power switch contact bounce (causes power supply/distribution inductive kick), (See Figure 2)

Many electronic appliances use a transient voltage suppressor (TVS) for overvoltage protection as shown in

Figure 2. The TVS is typically a metal-oxide varister (MOV) or Transzorb. The former is a non-linear resistor

with a soft turn-on characteristic whereas the latter is a large junction zener diode with a very sharp turn-on

characteristic. These devices have high pulse-power capability and pico-second response time. A TVS clamps

the load voltage to a safe level so the load operates uninterrupted in the presence of power supply

output-voltage spikes. But in the event of a voltage surge, fuse F2 blows and must be replaced to restore

operation.

F1

L

S

R

S

S1

F2

+

V

S

TVS

LOAD

Power Supply

Appliance

UDG−04057

Figure 2. Load Protection Using Transient Voltage Suppressor Clamps

The TPS2400 circuit in Figure 3 protects the load from an overvoltage, not by clamping the load voltage like

a TVS, but by disconnecting the load from the power supply. The circuit responds to an overvoltage in less than

1 µs and rides out a voltage surge without blowing fuse F2. Note that the voltage surge can be of indefinite

duration.

The load can see a voltage spike of up to 1 µs, the amount of time it takes the TPS2400 to disconnect the load

from the power supply. A low-power zener diode D2 can be used to clamp the load voltage to a safe level. In

most cases, diode D2 is not necessary since the load bypass capacitor (not shown) forms a low-pass filter with

resistor R and inductor L to significantly attenuate the spike.

S

5

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APPLICATION INFORMATION

When the TPS2400 disconnects the load from the power supply, the power-supply output-voltage spikes as the

stored energy in inductor L is released. A zener diode D1 or a small ceramic capacitor can be used to keep

S

the voltage spike at a safe level.

L

S

R

S

F1

S1

F2

Q1

5

U1

4

LOAD

TPS2400

+

V

S

D1

(Optional)

D2

(Optional)

2

Power Supply

Appliance

UDG−04058

Figure 3. TPS2400 Application Block Diagram

Controlling the Load Inrush-Current

Figure 4 is a simplified representation of an appliance with a plug-in power supply (e.g., wall adapter). When

power is first applied to the load in Figure 4, the large filter capacitor C acts like a short circuit, producing

LOAD

an immediate inrush-current that is limited by the power-supply output resistance and inductance, R and L ,

S

respectively. This current can be several orders of magnitude greater than the steady-state load current. The

large inrush current can damage power connectors P1 and J1 and power switch S1, and stress components.

Increasing the power-supply output resistance and inductance lowers the inrush current. However, the former

increases system power-dissipation and the latter decreases connector and switch reliability by encouraging

the contacts to arc when they bounce.

L

S

R

S

F1

J1

P1

S1

F2

+

V

S

LOAD

C

LOAD

Power Supply

Appliance

UDG−04059

Figure 4. Power-Supply Output Resistance and Inductance Circuit Model

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APPLICATION INFORMATION

The TPS2400 circuit in Figure 5 limits the inrush current without these draw backs. The TPS2400 charges the

transistor Q1 gate capacitance C with a 5-µA source when Q1 is commanded to turn on. Transistor Q1 is wired

G

as a source follower so the gate-voltage slew rate and the load-voltage slew rate are identical and equal to

ēV

ēt

5 mA

L

+

C

G

(1)

The corresponding inrush current is:

ēV

ēt

C

L

₊ǒ Ǔ

I

[ C

5 mA

INRUSH

L

C

G

(2)

An external capacitor and a series 1-kΩ resistor can be connected to the gate of Q1 and ground to reduce inrush

current further. In this case, the parameter C in equations 1 and 2 is the sum of the internal and external FET

G

gate capacitance. The 1-kΩ resistor decouples the external gate capacitor so the TPS2400 can rapidly turn off

transistor Q1 in response to an overvoltage condition.

L

S

R

S

F1

Q1

J1 P1

S1

F2

5

C

LOAD

U1

4

LOAD

TPS2400

+

D1

(Optional)

2

Power Supply

Appliance

UDG−04060

Figure 5. Turn-On Voltage Slew Rate Control Using the TPS2400

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TYPICAL CHARACTERISTICS

R

= 50 Ω

LOAD

BW = 20 MHz

V

IN

(1 V/div)

V

OUT

(1 V/div)

t − Time − 200 µs/div

Figure 6. Output Turn-On Response

V

IN

V

OUT

S1

Q1

FDC3616N

5

VIN

+

U1

TPS2400

50 Ω

LOAD

5 V

GATE

4

R

V

IN1

GND

2

V

GATE

UDG−04062

Figure 7. Output Turn-On Response Test Circuit

8

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TYPICAL CHARACTERISTICS

R

= 50 Ω

LOAD

BW = 20 MHz

V

IN

(2 V/div)

V

O

V

OUT

(2 V/div)

V

G

(2 V/div)

V

GATE

V

IN

V

GATE

(5 V/div)

t − Time − 40 ns/div

Figure 8. Output Turn-Off Response

V

IN

V

OUT

D1

1N5818

Q1

FDC3616N

5

S1

V

50 Ω

LOAD

U1

TPS2400

4

R

V

5 V

IN1

IN2

+

V

GATE

10 V

2

UDG−04061

Figure 9. Output Turn-Off Response Test Circuit

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TYPICAL CHARACTERISTICS

INPUT SUPPLY CURRENT

vs

JUNCTION TEMPERATURE

vs

JUNCTION TEMPERATURE

180

800

700

V

is within the

IN

GATE Enable Range

V

VIN

> V

OVP

V

IN

= 6.5 V

V

IN

= 100 V

160

140

V

IN

= 75 V

600

500

120

100

80

60

40

20

0

V

IN

V

IN

V

IN

= 50 V

= 25 V

= 10 V

V

= 5.0 V

IN

400

300

200

100

0

V

= 3.1 V

IN

−50

0

50

100

150

−50

0

50

100

150

T

J

− Junction Temperature − °C

T

J

− Junction Temperature − °C

Figure 10

Figure 11

GATE SOURCING CURRENT

vs

GATE VOLTAGE

8

7

8

7

T

J

= 125°C

V

IN

= 3.1 V

V

IN

= 5 V

T

J

= 125°C

T

= 25°C

J

T

= 25°C

J

6

5

6

5

T

J

= −40°C

T

J

= −40°C

4

3

4

3

2

0

5

10

15

0

5

10

15

20

V

− Gate Voltage − V

V

− Gate Voltage − V

GATE

Figure 12

Figure 13

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TYPICAL CHARACTERISTICS

GATE OUTPUT VOLTAGE

GATE SINKING CURRENT

vs

INPUT SUPPLY VOLTAGE

JUNCTION TEMPERATURE

600

550

500

20

18

−40°C ≤ T ≤ 125°C

J

V = 15V

GATE

16

14

12

10

8

450

6

4

2

0

400

350

300

2

3

4

5

6

7

8

−50

0

50

100

150

V

VIN

− Input Supply Voltage − V

T

J

− Junction Temperature − °C

Figure 14

Figure 15

TURN-OFF TIME to V

vs

= 6.9 V

GATE

TURN-OFF TIME to V

vs

= 6.9 V

GATE

JUNCTION TEMPERATURE

600

500

400

700

V

IN

V

IN

Step 3.3 V to 8 V

600

500

400

300

200

V

IN

Step 5 V to 8 V

V

IN

Step 5 V to 8 V

300

200

100

0

V

IN

Step 6 V to 8 V

100

0

V

IN

Step 6 V to 8 V

C

= 1 nF

C

= 10 nF

LOAD

−50

0

50

100

150

−50

0

50

100

150

T

J

− Junction Temperature − °C

T

J

− Junction Temperature − °C

Figure 16

Figure 17

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SLUS599 − JUNE 2004

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PACKAGE OPTION ADDENDUM

www.ti.com

4-Mar-2005

PACKAGING INFORMATION

Orderable Device

Status ⁽¹⁾

Package Package

Pins Package Eco Plan ⁽²⁾Lead/Ball Finish MSL Peak Temp ⁽³⁾

Qty

Type

Drawing

TPS2400DBVR

TPS2400DBVT

ACTIVE

SOT-23

DBV

5

3000

250

None

CU NIPDAU Level-1-235C-UNLIM

DBV

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in

a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2)

Eco Plan - May not be currently available - please check http://www.ti.com/productcontent for the latest availability information and additional

product content details.

None: Not yet available Lead (Pb-Free).

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements

for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered

at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Green (RoHS & no Sb/Br): TI defines "Green" to mean "Pb-Free" and in addition, uses package materials that do not contain halogens,

including bromine (Br) or antimony (Sb) above 0.1% of total product weight.

(3)

MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications, and peak solder

temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is

provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the

accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take

reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on

incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited

information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI

to Customer on an annual basis.

Addendum-Page 1

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Automotive

www.ti.com/automotive

DSP

dsp.ti.com

Broadband

Digital Control

Military

www.ti.com/broadband

www.ti.com/digitalcontrol

www.ti.com/military

Interface

Logic

interface.ti.com

logic.ti.com

Power Mgmt

Microcontrollers

power.ti.com

Optical Networking

Security

www.ti.com/opticalnetwork

www.ti.com/security

www.ti.com/telephony

www.ti.com/video

microcontroller.ti.com

Telephony

Video & Imaging

Wireless

www.ti.com/wireless

Mailing Address:

Texas Instruments

Post Office Box 655303 Dallas, Texas 75265


型号：	TPS2400DBVTG4
厂家：	TEXAS INSTRUMENTS
描述：	具有 100V 输入瞬态保护的 5.5V 过压保护控制器 \| DBV \| 5 \| -40 to 85 控制器光电二极管电源管理电路电源电路
文件：	总15页 (文件大小：252K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TPS2400DBVTG4 [TI]

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