TPS25830AQWRHBRQ1 [TI]
具有 BATT 短路保护和 MFi 功能的 USB Type-C® 和 SDP/CDP 充电端口转换器 | RHB | 32 | -40 to 125;型号: | TPS25830AQWRHBRQ1 |
厂家: | TEXAS INSTRUMENTS |
描述: | 具有 BATT 短路保护和 MFi 功能的 USB Type-C® 和 SDP/CDP 充电端口转换器 | RHB | 32 | -40 to 125 CD 转换器 |
文件: | 总76页 (文件大小:6321K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TPS25830A-Q1, TPS25832A-Q1
ZHCSLL2A –MAY 2021 –REVISED MARCH 2022
TPS2583xA-Q1 具有电缆补偿的汽车类USB Type-C® 和BC1.2 5V 3.5A 输出、36V
输入同步降压直流/直流稳压器
– VBUS 对VBAT 短路保护
1 特性
– DP_IN、DM_IN、CCx 对VBAT 短路(仅
TPS25830A-Q1)
• 符合面向汽车应用的AEC-Q100 标准:
– DP_IN、DM_IN、CCx 对VBUS 短路
– 符合CCx IEC 61000-4-2 标准的DP_IN、
DM_IN
– 温度等级1:–40°C 至+125°C,TA
– HBM ESD 分类等级H2
– CDM ESD 分类等级C5
• ±8kV 接触放电和±15kV 空气放电
• 故障标志报告
• 具有可湿性侧面的32 引脚QFN 封装
• 同步降压直流/直流稳压器
– 输入电压范围:4.5V 至36V
– 输出电流:3.5A
– 5.1V 输出电压,精度为±1%
– 电流模式控制
– 频率可调节:300 kHz 至2.2 MHz
– 与外部时钟频率同步
2 应用
• 汽车信息娱乐系统
• USB 媒体中心
• USB 充电器端口
– 具有扩频频谱抖动的FPWM
– 内置补偿功能,便于使用
• 符合USB-IF 标准
3 说明
TPS2583xA-Q1 是一款包含一个同步直流/直流转换器
的 USB Type-C 和 BC1.2 充电端口控制器。凭借电缆
压降补偿,不管负载电流如何变化,VBUS 电压都保持
恒定,确保能以更理想的电流和电压为连接的便携式设
备充电。
– USB Type-C® 1.3 版
• CC 逻辑、VCONN 拉电流和放电电流
• USB 电缆极性保护(POL)
– 符合USB BC1.2 规范的CDP/SDP 模式
– 符合MFI 过流限制
TPS2583xA-Q1 包含可实现 DP 和 DM 直通的高带宽
模拟开关。
• 针对USB 电源和通信进行了优化
– 用户可编程的USB 电流限制
– 高达1.5V 的电缆压降补偿
– DP 和DM 上的高带宽数据开关
– 可用于进行USB 固件更新的客户端模式
• 集成保护
TPS25830A-Q1 还在 VBUS、CC1、CC2、DM_IN 和
DP_IN 引脚上集成了对电池短路保护(支持高达 18V
的电压)。TPS25832A-Q1 不支持数据线(CC 和
Dx)对VBAT 短路保护。
器件信息(1)
器件型号
TPS25830A-Q1
TPS25832A-Q1
封装
VQFN (32)
VQFN (32)
封装尺寸(标称值)
5.00mm × 5.00mm
5.00mm × 5.00mm
(1) 如需了解所有不同可用选件的详细器件型号,请参阅产品说明
书末尾的可订购产品附录。
CBOOT
VIN
BOOT
L
RSNS
IN
SW
RSET
EN/UVLO
RT/SYNC
CSP
CSN/OUT
Optional
VCC
TPS2583xA-Q1
LS_GD
FAULT
LD_DET
POL
BUS
CC1
CC2
CTRL1
CTRL2
DP_OUT
DM_OUT
DP_IN
DM_IN
IMON
ILIMIT AGND PGND
TPS2583xA-Q1 简化版原理图
降压效率与输出电流间的关系(fsw = 400kHz)
本文档旨在为方便起见,提供有关TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SLVSFT5
TPS25830A-Q1, TPS25832A-Q1
ZHCSLL2A –MAY 2021 –REVISED MARCH 2022
www.ti.com.cn
Table of Contents
10.3 Feature Description.................................................23
10.4 Device Functional Modes........................................45
11 Application and Implementation................................ 48
11.1 Application Information............................................48
11.2 Typical Application.................................................. 48
12 Power Supply Recommendations..............................61
13 Layout...........................................................................61
13.1 Layout Guidelines................................................... 61
13.2 Ground Plane and Thermal Considerations............62
13.3 Layout Example...................................................... 63
14 Device and Documentation Support..........................64
14.1 Documentation Support.......................................... 64
14.2 Related Links.......................................................... 64
14.3 接收文档更新通知................................................... 64
14.4 支持资源..................................................................64
14.5 Trademarks.............................................................64
14.6 静电放电警告.......................................................... 64
14.7 术语表..................................................................... 64
15 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 说明(续).........................................................................3
6 Device Comparison Table...............................................3
7 Pin Configuration and Functions...................................4
8 Specifications.................................................................. 6
8.1 Absolute Maximum Ratings ....................................... 6
8.2 ESD Ratings .............................................................. 7
8.3 Recommended Operating Conditions ........................7
8.4 Thermal Information....................................................8
8.5 Electrical Characteristics ............................................8
8.6 Timing Requirements ...............................................12
8.7 Switching Characteristics .........................................13
8.8 Typical Characteristics..............................................15
9 Parameter Measurement Information..........................21
10 Detailed Description....................................................22
10.1 Overview.................................................................22
10.2 Functional Block Diagram.......................................23
Information.................................................................... 64
4 Revision History
注:以前版本的页码可能与当前版本的页码不同
Changes from Revision * (May 2021) to Revision A (March 2022)
Page
• Added RHB0032AA package to the data sheet..................................................................................................4
• Added the thermal information for RHB0032AA package.................................................................................. 8
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5 说明(续)
此同步降压稳压器具有电流模式控制并采用内部补偿,因此简化了设计。RT 引脚上有一个电阻器,可用于在
300kHz 和2.2MHz 之间设置开关频率。在低于 400kHz 的频率下运行可实现更高的系统效率。在高于 2.1MHz 的
频率下运行则可以避开AM 无线电频带,并且能够使用较小的电感器。
TPS2583xA-Q1 集成了标准 USB Type-C 端口控制器功能,包括用于 3A 和 1.5A 电流广播的配置通道 (CC) 逻
辑。电池充电(1.2 版)集成提供了利用 USB 数据线信号来确定 USB 端口拉电流能力的传统非 Type-C USB 设
备所需的电气特性。
内含一个精密电流感应放大器,用于实现用户可编程电缆压降补偿和电流限制调整。电缆补偿可使降压稳压器输
出电压随负载电流线性改变,以抵消由于汽车电缆布线中的导线电阻引起的压降,从而帮助便携式设备在重载下
实现最佳电流和电压充电。不管负载电流如何变化,在连接的便携式设备上测得的 VBUS 电压都保持大致恒定,这
使得便携式设备的电池充电器能够保持最佳工作状态。
USB 规范要求 USB 充电端口满足电流限制,但也留下了合理的自由空间,允许系统设计人员基于系统要求选择
过流保护级别。TPS2583xA-Q1 使用了一种新颖的双阈值电流限制电路,允许系统设计人员对降压稳压器的平均
电流限制保护进行编程,或者在 CSN/OUT 和 BUS 引脚之间使用一个外部 NMOS 来对电流限制进行调整。由于
实施了 NFET,TPS2583xA-Q1 降压稳压器可在USB 端口上存在过流故障期间为其他负载提供5V 输出。此外,
TPS2583xA-Q1 使用的电流限制方法可以满足最新的MFi 要求。
TPS2583xA-Q1 集成保护功能包括逐周期电流限制、断续短路保护、欠压锁定、VBUS 过压和过流、CC 过压和过
流、数据线(Dx) 对VBUS 和VBAT 短路以及裸片过热保护。
TPS25830A-Q1 包括可实现 DP 和 DM 直通的高带宽模拟开关,支持数据线(Dx 和 CC)对 VBAT 短路保护。
TPS25832A-Q1 不支持数据线(Dx 和CC)对VBAT 短路保护。
6 Device Comparison Table
DP/DM/CC SHORT
PART NUMBER
PACKAGE
MFI OC COMPLIANT
CLIENT MODE
DCP AUTO
TO BAT
TPS25830A-Q1
TPS25830-Q1
TPS25832A-Q1
TPS25832-Q1
VQFN (32)
VQFN (32)
VQFN (32)
VQFN(32)
Yes
No
Yes
No
No
No
No
No
Yes
Yes
Yes
No
Yes
No
No
No
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7 Pin Configuration and Functions
A1
A4
1
24
FAULT
IN
IN
1
24
FAULT
IN
IN
LD_DET
POL
2
3
4
5
6
7
8
23
22
21
20
19
18
17
LD_DET
POL
2
3
4
5
6
7
8
23
22
21
20
19
18
17
IN
IN
EN
VCC
EN
VCC
Thermal Pad
Thermal Pad
CTRL1
CTRL2
DP_OUT
DM_OUT
CC1
CTRL1
CTRL2
DP_OUT
DM_OUT
CC1
CC2
CC2
DP_IN
DM_IN
DP_IN
DM_IN
A2
A3
As of 11/14/2017
NOTES:
1) A1, A2, A3, and A4 are corner anchors for enhanced package stress
performance.
2) A1, A2, A3, and A4 are electrically connected to the thermal pad.
3) A1, A2, A3, and A4 PCB lands should be electrically isolated or
electrically connected to thermal pad and PGND.
图7-2. TPS2583xAQCWRHBRQ1 Package 32-Pin
(VQFN) Top View (2)
图7-1. TPS2583xAQWRHBRQ1 Package 32-Pin
(VQFN) Top View (1)
表7-1. Pin Functions
PIN
NAME
TYPE
I/O
DESCRIPTION
(3)
NO.
Analog ground terminal. Ground reference for internal references and logic. All electrical
parameters are measured with respect to this pin. Connect to system ground on PCB.
AGND
BOOT
16
G
P
–
Boot-strap capacitor connection for HS FET driver. Connect a high quality 100-nF capacitor
from this pin to the SW pin.
32
BUS
CC1
15
20
19
13
14
5
A
A
A
A
A
A
A
A
A
A
A
I
VBUS discharge input. Connect to VBUS on USB Connector.
I/O Analog input/output. Connect to Type-C CC1 pin.
I/O Analog input/output. Connect to Type-C CC2 pin.
CC2
CSN/OUT
CSP
I
I
I
I
Negative input of current sense amplifier, also buck output for internal voltage regulation
Positive input of current sense amplifier.
CTRL1
CTRL2
DM_IN
DM_OUT
DP_IN
DP_OUT
Logic-level control inputs for device/system configuration (see Truth Table).
Logic-level control inputs for device/system configuration (see Truth Table).
DM data line. Connect to USB connector.
6
17
8
DM data line. Connect to USB host controller.
18
7
DP data line. Connect to USB connector.
DP data line. Connect to USB host controller.
Enable pin. Do not float. High = on, Low = off. Can be tied to VIN. Precision enable input allows
adjustable UVLO by external resistor divider.
EN/UVLO
4
A
FAULT
ILIMIT
IMON
24
12
11
A
A
A
O
Active LOW open-drain output. Asserted during fault conditions (see 表10-4).
External resistor used to set the current-limit threshold (see 表10-2).
External resistor used to set the max cable comp voltage at full load current.
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表7-1. Pin Functions (continued)
PIN
TYPE
I/O
DESCRIPTION
(3)
NAME
NO.
1, 2,
3
Input Supply to regulator. Connect a high-quality bypass capacitor(s) directly to this pin and
PGND.
IN
P
I
LD_DET
LS_GD
23
10
A
A
O
Active LOW open-drain output. Asserted when a Type-C UFP is identified on the CC lines.
External NMOS gate driver.
25,
26,
27
Power ground terminal. Connect to system ground and AGND. Connect to bypass capacitor
with short wide traces.
PGND
POL
G
A
–
Active LOW open-drain output. Signals which Type-C CC pin is connected to the CC line. This
gives cable orientation information needed to mux the super speed lines. Asserted when the
CC2 pin is connected to the CC line in the cable.
22
O
Resistor Timing or External Clock input. An internal amplifier holds this terminal at a fixed
voltage when using an external resistor to ground to set the switching frequency. If the terminal
is pulled above the PLL upper threshold, a mode change occurs and the terminal becomes a
synchronization input. The internal amplifier is disabled and the terminal is a high impedance
clock input to the internal PLL. If clocking edges stop, the internal amplifier is re-enabled and
the operating mode returns to resistor frequency programming.
RT/SYNC
9
A
28,
29,
30,
31
Switching output of the regulator. Internally connected to source of the HS FET and drain of the
LS FET. Connect to power inductor.
SW
P
P
Output of internal bias supply. Used as supply to internal control circuits. Connect a high quality
2.2-µF capacitor from this pin to GND.
VCC
21
(1) For the package drawing, please refer to RHB0032R at the end of the data sheet.
(2) For the package drawing, please refer to RHB0032AA at the end of the data sheet.
(3) A = Analog, P = Power, G = Ground.
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8 Specifications
8.1 Absolute Maximum Ratings
Voltages are with respect to GND (unless otherwise noted)(1)
PARAMETER
MIN
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–3.5
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
–0.3
MAX
UNIT
IN to PGND
40
OUT to PGND
EN to AGND
CSP to AGND
20
VIN + 0.3
20
Input voltage
CSN to AGND
20
V
BUS to AGND
18
RT/SYNC to AGND
6
CTRL1 or CTRL2 to AGND
AGND to PGND
6
0.3
SW to PGND
VIN + 0.3
SW to PGND (less than 10 ns transients)
BOOT to SW
40
6
Output voltage
V
VCC to AGND
6
LS_GD
18
18
7
TPS25830A-Q1: CC1 or CC2 to AGND
TPS25832A-Q1: CC1 or CC2 to AGND
TPS25830A-Q1: DP_IN, DM_IN to AGND
TPS25832A-Q1: DP_IN, DM_IN to AGND
DP_OUT, DM_OUT to AGND
FAULT, POL, LD_DET to AGND
ILIMIT or IMON to AGND
18
7
Voltage range
V
6
6
6
Pin positive source current,
IVCC
VCC Source Current
CC1, CC2
5
mA
Pin positive source current,
ISRC
Internally
Limited
A
A
A
Pin positive sink current, ISNK CC1, CC2 (while applying VCONN)
Pin positive sink current, ISNK FAULT, POL, LD_DET
1
Internally
Limited
DP_IN to DP_OUT, or DM_IN to DM_OUT in SDP, CDP, or
Client Mode
I/O current
100
mA
–100
TJ
Junction temperature
Storage temperature
150
150
°C
°C
–40
–65
Tstg
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
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8.2 ESD Ratings
VALUE
±2000(2)
±750(3)
UNIT
Human body model (HBM), per AEC Q100-002(1)
Corner pins (1, 8, 9, 17, 25 and 32)
Charged device model (CDM), per
AEC Q100-011
V(ESD) Electrostatic discharge
Other pins
±750(3)
V
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air-gap discharge
DP_IN, DM_IN, CC1 and CC2 pins
DP_IN, DM_IN, CC1 and CC2 pins
±8000(4)
±15000(4)
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
(2) The passing level per AEC-Q100 Classification H2.
(3) The passing level per AEC-Q100 Classification C5.
(4) Surges per IEC61000-4-2, 1999 applied between DP_IN, DM_IN, CC1, CC2 and output ground of the TPS2583x-Q1 evaluation
module. Addition 0.22u cap is needed on CCx pins.
8.3 Recommended Operating Conditions
Voltages are with respect to GND (unless otherwise noted)
MIN
4.5
0
NOM
MAX UNIT
IN to PGND
36
VIN
5.5
3.6
EN
VCC when driven from external regulator
DP_IN, DM_IN
0
VI
Input voltage
0
DP_OUT, DM_OUT
CTRL1, CTRL2
0
3.6
VCC
VCC
VCC
6.5
V
0
RT/SYNC when driven by external clock
FAULT, LD_DET, POL
CSN/OUT
0
VPU
VO
Pull up voltage
Output voltage
0
0
Buck regulator output current
0
3.5
A
DP_IN to DP_OUT or DM_IN to DM_OUT Continuous
current in SDP, CDP or Client Mode
30
15
–30
–15
IO
Output current
DP_IN to DM_IN Continuous current in BC1.2 DCP
Mode
mA
ISRC
ISNK
II
Source current
Sink current
CC1 or CC2 source current when supplying VCONN
FAULT, LD_DET, POL
250
10
Input current
Continuous current into the CSP pin
RIMON, RILIMIT
200
µA
kΩ
°C
REXT
TJ
External resistnace
0
100
Operating junction temperature
125(1)
–40
(1) Operating at junction temperatures greater than 125°C is possible, however lifetime will be degraded.
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8.4 Thermal Information
TPS2583xA-Q1
THERMAL METRIC(1)
RHB0032R (VQFN)
RHB0032AA (VQFN)
UNIT
32 PINS
28.7
17.6
7.2
32 PINS
29.4
18.6
9.7
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
0.2
0.2
ΨJT
7.2
9.7
ΨJB
RθJC(bot)
1
2.3
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
8.5 Electrical Characteristics
Limits apply over the junction temperature (TJ) range of -40°C to +150°C; VIN = 13.5 V, fSW =400 kHz, CVCC = 2.2 µF, RSNS
=
15 mΩ, RIMON = 13 kΩ, RILIMIT= 13 kΩ, RSET= 300 Ωunless otherwise stated. Minimum and maximum limits are specified
through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are
provided for reference purposes only.
PARAMETER
TEST CONDITIONS
MIN
TYP
700
10
MAX UNIT
SUPPLY VOLTAGE (IN PIN)
VIN
IQ
Operating input voltage range
4.5
36
V
VEN/UVLO = VIN, CTRL1 = CTRL2 =
VCC, VCSN = 8V, CC1 or CC2 = RD,
CC2 or CC1 = open
Operating quiescent current (non
switching)
990
µA
VEN/UVLO = VIN, CTRL1 = CTRL2 =
VCC, CC1 and CC2 = open
IQ-SB
ISD
Standby quiescent current
290
16
µA
µA
Shutdown quiescent current;
measured at IN pin.
EN= 0
ENABLE and UVLO (EN/UVLO PIN)
EN/UVLO input level required to turn
on internal LDO
VEN/UVLO_VCC_H
VEN/UVLO_VCC_L
VEN/UVLO_H
VEN/UVLO rising threshold
VEN/UVLO falling threshold
VEN/UVLO rising threshold
1.14
V
V
V
EN/UVLO input level required to turn
off internal LDO
0.3
EN/UVLO input level required to turn
on state machine
1.140
1.200
1.260
VEN/UVLO_HYS
ILKG_EN/UVLO
INTERNAL LDO
VBOOT_UVLO
Hysteresis
VEN/UVLO falling threshold
VEN/UVLO = 3.3 V
90
mV
uA
Enable input leakage current
0.5
Bootstrap voltage UVLO threshold
2.2
5
V
V
Internal LDO output voltage appearing
on VCC pin
VCC
4.75
3.4
5.25
3.8
6 V ≤VIN ≤36 V
VCC_UVLO_R
Rising UVLO threshold
Hysteresis
3.6
V
VCC_UVLO_HYS
600
mV
CURRENT LIMIT VOLTAGE (CSP - CSN/OUT PINS) TO ACTIVATE BUCK AVG CURRENT LIMITING
VCSN = 5 V, RSET = 300 Ω, RILIMIT
13 kΩ, RIMON = 13 kΩ, -40°C ≤TJ ≤
125°C
=
Current limit voltage buck regulator
control loop
(VCSP –VCSN/
43.5
42.5
46
46
48.5
49.5
mV
mV
)
OUT
VCSN = 5 V, RSET = 300 Ω, RILIMIT
13 kΩ, RIMON = 13 kΩ, -40°C ≤TJ ≤
150°C
=
Current limit voltage buck regulator
control loop
(VCSP –VCSN/
)
OUT
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8.5 Electrical Characteristics (continued)
Limits apply over the junction temperature (TJ) range of -40°C to +150°C; VIN = 13.5 V, fSW =400 kHz, CVCC = 2.2 µF, RSNS
=
15 mΩ, RIMON = 13 kΩ, RILIMIT= 13 kΩ, RSET= 300 Ωunless otherwise stated. Minimum and maximum limits are specified
through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are
provided for reference purposes only.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
VCSN = 5 V, RSET = 300 Ω, RILIMIT
26.1 kΩ, RIMON = 13 kΩ, -40°C ≤TJ
≤125°C
=
Current limit voltage buck regulator
control loop
(VCSP –VCSN/
20
22.5
25
26
mV
mV
)
OUT
VCSN = 5 V, RSET = 300 Ω, RILIMIT
26.1 kΩ, RIMON = 13 kΩ, -40°C ≤TJ
≤150°C
=
Current limit voltage buck regulator
control loop
(VCSP –VCSN/
19
22.5
)
OUT
CURRENT LIMIT VOLTAGE (CSP - CSN/OUT PINS) TO ACTIVATE EXTERNAL NFET CURRENT LIMITING
VCSN = 5 V, RSET = 300 Ω, RILIMIT
6.8 kΩ, RIMON = 13 kΩ, -40°C ≤TJ
≤125°C
=
(VCSP –VCSN/
Current limit voltage NFET control loop
Current limit voltage NFET control loop
Current limit voltage NFET control loop
Current limit voltage NFET control loop
41
39.5
19
44
44
47
48.5
25
mV
mV
mV
mV
mV
mV
mV
mV
)
OUT
VCSN = 5 V, RSET = 300 Ω, RILIMIT
6.8 kΩ, RIMON = 13 kΩ, -40°C ≤TJ
≤150°C
=
(VCSP –VCSN/
)
OUT
VCSN = 5 V, RSET = 300 Ω, RILIMIT
13.7 kΩ, RIMON = 13 kΩ, -40°C ≤TJ
≤125°C
=
(VCSP –VCSN/
22
)
OUT
VCSN = 5 V, RSET = 300 Ω, RILIMIT
13.7 kΩ, RIMON = 13 kΩ, -40°C ≤TJ
≤150°C
=
(VCSP –VCSN/
18
22
26
)
OUT
VCSN = 5 V, RSET = 300 Ω, RILIMIT
6.8 kΩ, RIMON = 13 kΩ, -40°C ≤TJ
≤125°C
=
Secondary current limit voltage NFET
control loop
(VCSP –VCSN/
65.6
63.2
30.4
28.8
70.4
70.4
35.2
35.2
75.2
77.6
40
)
OUT
VCSN = 5 V, RSET = 300 Ω, RILIMIT
6.8 kΩ, RIMON = 13 kΩ, -40°C ≤TJ
≤150°C
=
Secondary current limit voltage NFET
control loop
(VCSP –VCSN/
)
OUT
VCSN = 5 V, RSET = 300 Ω, RILIMIT
13.7 kΩ, RIMON = 13 kΩ, -40°C ≤TJ
≤125°C
=
Secondary current limit voltage NFET
control loop
(VCSP –VCSN/
)
OUT
VCSN = 5 V, RSET = 300 Ω, RILIMIT
13.7 kΩ, RIMON = 13 kΩ, -40°C ≤TJ
≤150°C
=
Secondary current limit voltage NFET
control loop
(VCSP –VCSN/
41.6
)
OUT
CURRENT LIMIT - BUCK REGULATOR PEAK CURRENT LIMIT
IL-SC-HS
IL-SC-LS
IL-NEG-LS
High-side current limit
6.2
4.6
7.1
5.4
8.0
6.2
A
A
A
Low-side current limit
Low-side negative current limit
–3.7
–2.7
–1.7
CABLE COMPENSATION VOLTAGE
(VCSP –VCSN) = 46 mV, RSET = 300
Ω, RILIMIT = 13 kΩ, RIMON = 13 kΩ
VIMON
VIMON
VIMON
Cable compensation voltage
0.935
0.435
1
0.5
1.8
1.065
0.565
V
V
V
(VCSP –VCSN) = 23 mV, RSET = 300
Ω, RILIMIT = 13 kΩ, RIMON = 13 kΩ
Cable compensation voltage
Cable compensation voltage (internal (VCSP –VCSN) = 46 mV, RSET = 300
clamp)
Ω, RILIMIT = 13 kΩ, RIMON = open
BUCK OUTPUT VOLTAGE (CSN/OUT PIN)
CC1 or CC2 pulldown resistance = Rd,
RIMON = 0 Ω, RILIMIT = 0 Ω, –40°C ≤
TJ ≤125°C
VCSN/OUT
Output voltage
5.05
5.10
5.15
1
V
CC1 or CC2 pulldown resistance = Rd,
RIMON = 0 Ω, RILIMIT = 0 Ω
VCSN/OUT
Output voltage accuracy
%
–1
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8.5 Electrical Characteristics (continued)
Limits apply over the junction temperature (TJ) range of -40°C to +150°C; VIN = 13.5 V, fSW =400 kHz, CVCC = 2.2 µF, RSNS
=
15 mΩ, RIMON = 13 kΩ, RILIMIT= 13 kΩ, RSET= 300 Ωunless otherwise stated. Minimum and maximum limits are specified
through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are
provided for reference purposes only.
PARAMETER
TEST CONDITIONS
MIN
TYP
7.5
500
2
MAX UNIT
Overvoltage level on CSN/OUT pin
which buck regulator stops switching
VCSN/OUT_OV
VCSN/OUT rising
7.1
7.9
V
mV
V
VCSN/OUT_OV_HYS Hysteresis
CSN / OUT pin voltage required to
trigger short circuit hiccup mode
VHC
VIN = VOUT + VDROP, VOUT = 5.1V,
IOUT = 3A
VDROP
Dropout voltage ( VIN-VOUT
)
150
mV
BUCK REGULATOR INTERNAL RESISTANCE
RDS-ON-HS
RDS-ON-HS
RDS-ON-HS
RDS-ON-LS
RDS-ON-LS
RDS-ON-LS
High-side MOSFET ON-resistance
High-side MOSFET ON-resistance
High-side MOSFET ON-resistance
Low-side MOSFET ON-resistance
Low-side MOSFET ON-resistance
Low-side MOSFET ON-resistance
Load = 3 A, TJ = 25°C
40
40
40
35
35
35
45
68
75
41
60
68
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
Load = 3 A, -40°C ≤TJ ≤125°C
Load = 3 A, -40°C ≤TJ ≤150°C
Load = 3 A, TJ = 25C
Load = 3 A, -40°C ≤TJ ≤125°C
Load = 3 A, -40°C ≤TJ ≤150°C
NFET GATE DRIVE (LS_GD PIN)
VLS_GD
NFET gate drive output voltage
VCSN/OUT = 5.1 V, CG = 1000 pF
9.5
2
11
3
12.5
4
V
ILS_DR_SRC
ILS_DR_SNK
NFET gate drive output source current VCSN/OUT = 5.1 V, CG = 1000 pF
µA
µA
NFET gate drive output sink current
VCSN/OUT = 5.1 V, CG = 1000 pF
VCSN/OUT rising
20
35
50
VCSN/OUT rising threshold for LS_GD
operation
VLS_GD_UVLO_R
2.85
3
3.18
V
VLS_GD_UVLO_HYS Hysteresis
80
mV
BUS DISCHARGE (BUS PIN)
RBUS_DCHG
BUS discharge resistance
VBUS = 4 V
250
320
550
0.8
Ω
Falling threshold for VBUS not
discharged
VBUS_NO_DCHG
V
VBUS = 4 V, No sink termination on CC
lines, Time > tW_BUS_DCHG
RBUS_DCHG_BLEED BUS bleed resistance
100
6.6
130
7
200
7.3
kΩ
Rising threshold for BUS pin
VBUS_OV
VBUS rising
V
overvoltage protection
VBUS_OV_HYS
RBUS_DCHG_18V
RBUS_DCHG_8V
Hysteresis
180
29
mV
kΩ
kΩ
Discharge resistance for BUS
Discharge resistance for BUS
VBUS = 18V, measure leakage current
VBUS = 8V, measure leakage current
35
CC1 AND CC2 - VCONN POWER SWITCH (CC1 AND CC2 PINS)
RDS-ON
RDS-ON
On-state resistance
On-state resistance
ICCn = 250 mA, TJ = 25°C
500
500
540
830
mΩ
mΩ
ICCn = 250 mA, –40°C ≤TJ ≤125°C
ICCn = 250 mA, –40°C ≤TJ ≤
150°C,
RDS-ON
On-state resistance
500
430
850
920
550
mΩ
mA
Ω
IOS_CCn
VCONN short circuit current limit
Discharge resistance
Short circuit current limit
350
650
CC pin that was providing VCONN
before detach: VCCX = 4V
RVCONN_DCHG
1100
CC pin that was providing VCONN
before detach
VTH
Falling threshold for discharged
Discharged threshold hysteresis
570
5.8
600
100
6.1
630
6.4
mV
mV
V
VTH
Rising threshold for CCn pin
overvoltage protection
VCCx_OV
CC pin voltage VCCn rising
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8.5 Electrical Characteristics (continued)
Limits apply over the junction temperature (TJ) range of -40°C to +150°C; VIN = 13.5 V, fSW =400 kHz, CVCC = 2.2 µF, RSNS
=
15 mΩ, RIMON = 13 kΩ, RILIMIT= 13 kΩ, RSET= 300 Ωunless otherwise stated. Minimum and maximum limits are specified
through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are
provided for reference purposes only.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
VCCx_OV_HYS
Hysteresis
150
mV
CC pin voltage VCCn = 18V, measure
leakage current
RCCn_DCHG_18V
Discharge resistance for CCn
Discharge resistance for CCn
40
86
kΩ
kΩ
CC pin voltage VCCn = 8V, measure
leakage current
RCCn_DCHG_8V
CC1/CC2 CONNECT MANAGEMENT: DANGLING ELECTRONICALLY MARKED CABLE MODE
Sourcing current on the passthrough
CC line
ISRC_CCn
ISRC_CCn
64
64
80
80
96
96
µA
µA
CC pin voltage 0 V ≤VCCn ≤1.5 V
CC pin voltage 0 V ≤VCCn ≤1.5 V
Sourcing current on the Ra CC line
CC1/CC2 CONNECT MANAGEMENT: UFP MODE
VCTRL1 = VCC and VCTRL2 = VCC, CC
pin voltage: 0 V ≤VCCn ≤1.5 V (with
CDP mode)
ISRC_CCn
ISRC_CCn
ISRC_CCn
ISRC_CCn
Sourcing current
Sourcing current
Sourcing current
Sourcing current
308
168
168
168
330
180
180
180
354
192
192
192
µA
µA
µA
µA
VCTRL1 = VCC and VCTRL2 = GND, CC
pin voltage: 0 V ≤VCCn ≤1.5 V (with
SDP mode)
VCTRL1 = GND and VCTRL2 = VCC, CC
pin voltage: 0 V ≤VCCn ≤1.5 V
(client mode)
VCTRL1 = GND and VCTRL2 = GND, CC
pin voltage: 0 V ≤VCCn ≤1.5 V
(client mode)
CCx is the CC pin under test, CCy is
the other CC pin. CC pin voltage
VCCx = 5.5 V, CCy = 0V or floating,
VEN = 0 V, IREV is current into CCx pin
IREV
Reverse leakage current
Reverse leakage current
0
9
5
µA
µA
CCx is the CC pin under test, CCy is
the other CC pin. CC pin voltage
VCCx = 5.5 V, CCy = 0, VEN = VIN,
IREV is current into CCx pin under test
IREV
12
FAULT, LD_DET, POL
VOL
IOFF
VOL
IOFF
FAULT Output low voltage
ISNK_PIN = 0.5 mA
VPIN = 5.5 V
250
1
mV
µA
FAULT Off-state leakage
LD_DET, POL Output low voltage
LD_DET, POL Off-state leakage
ISNK_PIN = 0.5 mA
VPIN = 5.5 V
250
1
mV
µA
CTRL1, CTRL2 - LOGIC INPUTS
VIH
VIL
Rising threshold voltage
1.48
1.30
180
2
V
V
Falling threshold voltage
Hysteresis
0.85
VHYS
IIN
mV
µA
Input current
1
–1
DP_IN AND DM_IN OVERVOLTAGE PROTECTION
Rising threshold for Dx_IN overvoltage
VDx_IN_OV
protection
DP_IN or DM_IN rising
3.7
3.9
100
94
4.15
V
Hysteresis
mV
kΩ
VDx_IN = 18V, measure leakage
current
RDx_IN_DCHG_18V
RDx_IN_DCHG_5V
Discharge resistance for Dx_IN
Discharge resistance for Dx_IN
VDx_IN = 5V, measure leakage
current
416
kΩ
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8.5 Electrical Characteristics (continued)
Limits apply over the junction temperature (TJ) range of -40°C to +150°C; VIN = 13.5 V, fSW =400 kHz, CVCC = 2.2 µF, RSNS
=
15 mΩ, RIMON = 13 kΩ, RILIMIT= 13 kΩ, RSET= 300 Ωunless otherwise stated. Minimum and maximum limits are specified
through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are
provided for reference purposes only.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
HIGH-BANDWIDTH ANALOG SWITCH
VDP_OUT = VDM_OUT = 0 V, IDP_IN
IDM_IN = 30 mA
=
RDS_ON
DP and DM switch on-resistance
DP and DM switch on-resistance
3.4
4.3
6.3
7.7
Ω
Ω
Ω
Ω
pF
pF
VDP_OUT = VDM_OUT = 2.4 V, IDP_IN
IDM_IN = –15 mA
=
=
RDS_ON
Switch resistance mismatch between VDP_OUT = VDM_OUT = 0 V, IDP_IN
=
0.05
0.05
6.7
0.15
0.15
|ΔRDS_ON
|ΔRDS_ON
CIO_OFF
CIO_ON
|
DP and DM channels
IDM_IN = 30 mA
VDP_OUT = VDM_OUT = 2.4 V, IDP_IN
IDM_IN = –15 mA
Switch resistance mismatch between
DP and DM channels
|
VEN = 0 V, VDP_IN = VDM_IN = 0.3 V,
Vac = 0.03 VPP , f = 1 MHz
DP/DM switch off-state capacitance
DP/DM switch on-state capacitance
VDP_IN = VDM_IN = 0.3 V, Vac = 0.03
VPP, f = 1 MHz
10
OIRR
Off-state isolation
VEN = 0 V, f = 250 MHz
f = 250 MHz
9
dB
dB
XTALK
On-state cross-channel isolation
29
VEN = 0 V, VDP_IN = V DM_IN = 3.6 V,
VDP_OUT = VDM_OUT = 0 V,
measure IDP_OUT and IDM_OUT
Off-state leakage current, DP_OUT
and DM_OUT
Ilkg(OFF)
0.1
1.5
µA
BW
800
MHz
Bandwidth (–3 dB)
RL = 50 Ω
CHARGING DOWNSTREAM PORT (CDP) DETECT
VDP_IN = 0.6 V, –250 µA < IDM_IN < 0
µA
VDM_SRC
DM_IN CDP output voltage
0.5
0.6
0.7
0.4
V
DP_IN rising lower window threshold
for VDM_SRC activation
VDAT_REF
VDAT_REF
VLGC_SRC
0.36
0.38
50
V
mV
V
Hysteresis
DP_IN rising upper window threshold
for VDM_SRC deactivation
0.91
40
2
0.95
0.99
100
VLGC_SRC_HYS
IDP_SINK
Hysteresis
100
70
mV
µA
DP_IN sink current
VDP_IN = 0.6 V
RT/SYNC THRESHOLD (RT/SYNC PIN)
RT/SYNC high threshold for external
Amplitude of SYNC clock AC signal
(measured at SYNC pin)
VIH_RT/SYNC
V
V
clock synchronization
RT/SYNC low threshold for external
clock synchronization
Amplitude of SYNC clock AC signal
(measured at SYNC pin)
VIL_RT/SYNC
0.8
THERMAL SHUTDOWN
Shutdown threshold
Recovery threshold
160
140
°C
°C
TSD
Thermal shutdown
8.6 Timing Requirements
Limits apply over the junction temperature (TJ) range of -40°C to +150°C; VIN = 13.5 V, fSW =400 kHz, CVCC = 2.2 µF, RSNS
=
15 mΩ, RIMON = 13 kΩ, RILIMIT= 13 kΩ, RSET= 300 Ωunless otherwise stated. Minimum and maximum limits are specified
through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are
provided for reference purposes only.
MIN NOM MAX UNIT
SYNC (RT/SYNC PIN) WITH EXTERNAL CLOCK
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8.6 Timing Requirements (continued)
Limits apply over the junction temperature (TJ) range of -40°C to +150°C; VIN = 13.5 V, fSW =400 kHz, CVCC = 2.2 µF, RSNS
=
15 mΩ, RIMON = 13 kΩ, RILIMIT= 13 kΩ, RSET= 300 Ωunless otherwise stated. Minimum and maximum limits are specified
through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are
provided for reference purposes only.
MIN NOM MAX UNIT
Switching frequency using external clock on
RT/SYNC pin
fSYNC
300
2300 kHz
fSYNC = 400 kHz, VRT/SYNC > VIH_RT/SYNC
VRT/SYNC < VIL_RT/SYNC
,
TSYNC_MIN
TLOCK_IN
Minimum SYNC input pulse width
PLL lock time
100
100
ns
µs
8.7 Switching Characteristics
Limits apply over the junction temperature (TJ) range of -40°C to +150°C; VIN = 13.5 V, fSW =400 kHz, CVCC = 2.2 µF, RSNS
=
15 mΩ, RIMON = 13 kΩ, RILIMIT= 13 kΩ, RSET= 300 Ωunless otherwise stated. Minimum and maximum limits are specified
through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are
provided for reference purposes only.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
SOFT START
TSS
The time of internal reference to
increase from 0 V to 1.0 V
Internal soft-start time
3
5
7
ms
HICCUP MODE
NOC
Number of cycles that LS current limit
is tripped to enter Hiccup mode
128
118
Cycles
ms
TOC
Hiccup retry delay time
SW (SW PIN)
TON_MIN
Minimum turnon-time
105
7.5
ns
µs
Maximum turnon-time, HS timeout in
dropout
TON_MAX
TOFF_MIN
Dmax
Minimum turnoff time
80
98
ns
%
Maximum switch duty cycle
TIMING RESISTOR AND INTERNAL CLOCK
Switching frequency range using RT
fSW_RANGE
300
2300
kHz
mode
Switching frequency
Switching frequency
360
400
440
kHz
kHz
RT = 49.9 kΩ
RT = 8.66 kΩ
fSW
1953
2100
2247
Frequency span of spread spectrum
operation
FSSS
±6
%
BUS DISCHARGE
tDEGA_OUT_DCHG
Discharge asserting deglitch
5.0
12.5
266
23.4
400
ms
ms
VBUS = 1 V, time ISNK_OUT > 1 mA after
sink termination removed from CC
lines
VBUS discharge time after sink
termination removed from CC lines
tW_BUS_DCHG
150
CC1/CC2 - VCONN POWER SWITCH 5.1 kΩ ON ONE CC PIN AND 1 kΩ ON THE OTHER
tr
Output voltage rise time
Output voltage fall time
Output voltage turnon-time
Output voltage turnoff time
0.78
0.18
4.1
1.1
0.32
6.2
1
1.95
0.38
8.5
CL = 1 µF, RL = 100 Ω(measured
from 10% to 90% of final value)
ms
ms
tf
ton
toff
CL = 1 µF, RL = 100 Ω
0.5
1.6
CC1/CC2 VCONN POWER SWITCH: CURRENT LIMIT
tIOS Short circuit response time
15
µs
CC1/CC2 - CONNECT MANAGEMENT - ATTACH AND DETACH DEGLITCH
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8.7 Switching Characteristics (continued)
Limits apply over the junction temperature (TJ) range of -40°C to +150°C; VIN = 13.5 V, fSW =400 kHz, CVCC = 2.2 µF, RSNS
=
15 mΩ, RIMON = 13 kΩ, RILIMIT= 13 kΩ, RSET= 300 Ωunless otherwise stated. Minimum and maximum limits are specified
through test, design or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are
provided for reference purposes only.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
tDEGA_CC_ATT
tDEGD_CC_DET
Attach asserting deglitch
1.1
2.08
3.29
19.4
ms
ms
Detach asserting deglitch for exiting
UFP state
6.98
12.7
CC1/CC2 - CONNECT MANAGEMENT - ATTACHED MODE 5.1-kΩOR 1-kΩTERMINATION ON AT LEAST ONE CC PIN
tDEGA_CC_SHORT
tDEGA_CC_LONG
Detach, Rd and Ra asserting deglitch
Long deglitch
78
87
195
150
366
217
µs
ms
CC1/CC2 - CONNECT MANAGEMENT - VCONN DISCHARGED MODE
tW_CC_DCHG
Discharge wait time
37
66
99
ms
NFET DRIVER
VOUT = 5.1V, NFET = CSD87502Q2,
time from LS_GD 10% to 90%
tr
tf
VLS_DR rise time
VLS_DR fall time
1000
100
µs
µs
VOUT = 5.1 V, NFET = CSD87502Q2,
time from LS_GD time 90% to 10%
CURRENT LIMIT - EXTERNAL NFET CONNECTED BETWEEN CSN/OUT AND BUS, LS_GD CONNECTED TO FET GATE
tOC_HIC_DEG
tOC_HIC_RST
tOC_HIC_ON
tOC_HIC_OFF
Deglitch time before hiccup mode
Reset time for exiting hiccup mode
ON-time during hiccup mode
2
16
ms
ms
ms
ms
2
OFF-time during hiccup mode
263
FAULT DUE TO VBUS OC, VBUS OV, DP OV, DM OV, CC OV, CC OC
tDEGLA
Asserting deglitch time
5.5
5.5
8.2
8.2
11.5
11.5
ms
ms
tDEGLD
De-asserting deglitch time
LD_DET, POL
tDEGLA
Asserting deglitch time
88
150
220
ms
ms
tDEGLD
De-asserting deglitch time
7.0
12.7
19.4
HIGH-BANDWIDTH ANALOG SWITCH
tpd
Analog switch propagation delay
Analog switch skew between opposite
transitions of the same port (tPHL
tPLH
0.14
0.02
ns
ns
tSK
–
)
DP_IN and DM_IN overvoltage
protection response time
tOV_Dn
2
µs
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8.8 Typical Characteristics
Unless otherwise specified the following conditions apply: VIN = 13.5 V, fSW = 400 kHz, L = 8.2 µH, COUT_CSP = 66 µF,
COUT_CSN = 0.1 µF, CBUS = 1 µF, TA = 25 °C.
717
714
711
708
705
702
699
696
230
225
220
215
210
205
200
195
-40C
25C
125C
150C
-40C
25C
150C
0
4
8
12
16
Input Voltage (V)
20
24
28
32
36
40
0
4
8
12
16
Input Voltage (V)
20
24
28
32
36
40
D001
D002
VCSN = 8 V
CC1= Rd
CC1 = OPEN
CC2 = OPEN
图8-1. Non-Switching Quiescent Current
图8-2. Standby Quiescent Current
32
28
24
20
16
12
8
1.225
1.2
UP
DN
1.175
1.15
1.125
1.1
-40C
25C
125C
150C
1.075
1.05
4
0
4
8
12
16
Input Voltage (V)
20
24
28
32
36
40
-50
-25
0
25
Temperature (C)
50
75
100
125
150
D003
D004
图8-4. Precision Enable Threshold
EN = 0 V
图8-3. Shutdown Quiescent Current
3.9
3.75
3.6
5.1
5.07
5.04
5.01
4.98
4.95
4.92
4.89
UP
DN
-40C
25C
125C
150C
3.45
3.3
3.15
3
2.85
-60
-30
0
30
Temperature (C)
60
90
120
150
180
0
4
8
12
16
Input Voltage (V)
20
24
28
32
36
40
D005
D005
图8-5. VIN UVLO Threshold
图8-6. VCC vs Input Voltage
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8.8 Typical Characteristics (continued)
Unless otherwise specified the following conditions apply: VIN = 13.5 V, fSW = 400 kHz, L = 8.2 µH, COUT_CSP = 66 µF,
COUT_CSN = 0.1 µF, CBUS = 1 µF, TA = 25 °C.
5.16
5.14
5.12
5.1
7.8
7.6
7.4
7.2
7
-40C
25C
125C
150C
Vin = 6V
Vin = 13.5V
Vin = 36V
5.08
5.06
5.04
6.8
6.6
6.4
-50
-25
0
25
50
75
Temperature (C)
100
125
150
0
4
8
12
16
20
24
28
32
36
40
Input Voltage (V)
D006
图8-8. High-Side Current Limit vs Input Voltage
RIMON = 0 Ω
图8-7. VCSN/OUT Voltage vs Junction Temperature
80
60
55
50
45
40
35
30
25
72
64
56
48
40
32
24
Vin = 6V
Vin = 13.5V
Vin = 36V
Vin = 6V
Vin = 13.5V
Vin = 36V
-50
-25
0
25
Temperature (C)
50
75
100
125
150
-50
-25
0
25
Temperature (C)
50
75
100
125 150
D008
D009
图8-9. High-Side MOSFET on Resistance vs Junction
图8-10. Low-Side MOSFET on Resistance vs Junction
Temperature
Temperature
420
414
408
402
396
390
384
378
2400
1A
2A
3A
2100
1800
1500
1200
900
600
300
-50
-25
0
25
Temperature (C)
50
75
100
125
150
0
5
10
15
20
Input voltage (V)
25
30
35
40
D010
D011
RT = 49.9 kΩ
RT = 8.66 kΩ
图8-12. Switching Frequency vs VIN Voltage
图8-11. Switching Frequency vs Junction Temperature
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8.8 Typical Characteristics (continued)
Unless otherwise specified the following conditions apply: VIN = 13.5 V, fSW = 400 kHz, L = 8.2 µH, COUT_CSP = 66 µF,
COUT_CSN = 0.1 µF, CBUS = 1 µF, TA = 25 °C.
4.2
3.6
3
4.2
3.6
3
Rlimit = 13kW
Rlimit = 26.1kW
Rlimit = 6.8kW
Rlimit = 13.7kW
2.4
1.8
1.2
0.6
0
2.4
1.8
1.2
0.6
0
-50
-25
0
25
Temperature (C)
50
75
100
125
150
-50
-25
0
25
Temperature (C)
50
75
100
125
150
D012
D013
RSNS = 15 mΩ
RSET = 300 Ω
RSNS = 15 mΩ
RSET = 300 Ω
图8-13. Buck Average Current Limit vs Junction Temperature
图8-14. External FET Current Limit vs Junction Temperature
4.8
13
Vin = 6V
Vin = 13.5V
Vin = 36V
Vin = 6V
Vin = 13.5V
Vin = 36V
12.5
12
4.4
4
11.5
11
3.6
3.2
2.8
2.4
2
10.5
10
9.5
-50
-25
0
25
50
75
Temperature (C)
100
125
150
-50
-25
0
25
50
75
Temperature (C)
100
125
150
D013
D013
VCSN/OUT = 5.1 V
RIMON = 0 kΩ
图8-15. LS_GD Gate Source Current vs Junction Temperature
图8-16. LS_GD Gate Voltage vs Junction Temperature
1.35
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Load Current = 3 A
Load Current = 1.5 A
1.2
1.05
0.9
0.75
0.6
0.45
0.3
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Load Current (A)
3
-50
-25
0
25
50
75
Temperature (C)
100
125
150
D014
D014
RSNS = 15 mΩ
RSET = 300 Ω
RIMON = 13 kΩ
RSNS = 15 mΩ
RSET = 300 Ω
RIMON = 13 kΩ
图8-18. Cable Compensation Voltage vs Load Current
图8-17. Cable Compensation Voltage vs Junction Temperature
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8.8 Typical Characteristics (continued)
Unless otherwise specified the following conditions apply: VIN = 13.5 V, fSW = 400 kHz, L = 8.2 µH, COUT_CSP = 66 µF,
COUT_CSN = 0.1 µF, CBUS = 1 µF, TA = 25 °C.
450
420
390
360
330
300
270
240
7.5
7.35
7.2
7.05
6.9
6.75
6.6
6.45
-50
-25
0
25
Temperature (C)
50
75
100
125
150
-50
-25
0
25
Temperature (C)
50
75
100
125
150
D015
D016
图8-19. VBUS Discharge Resistance vs Junction Temperature
图8-20. VBUS Overvoltage Protection Threshold vs Junction
Temperature
4.3
4.2
4.1
4
4.3
4.2
4.1
4
3.9
3.8
3.7
3.6
3.9
3.8
3.7
3.6
-50
-25
0
25
Temperature (C)
50
75
100
125
150
-50
-25
0
25
Temperature (C)
50
75
100
125
150
D017
D018
图8-21. DP_IN Overvoltage Protection Threshold vs Junction
图8-22. DM_IN Overvoltage Protection Threshold vs Junction
Temperature
Temperature
880
800
720
640
560
480
400
320
700
600
500
400
300
200
100
0
-50
-25
0
25
Temperature (C)
50
75
100
125
150
-50
-25
0
25
Temperature (C)
50
75
100
125
150
D019
D020
VCONN = 5V
VCONN = 5 V
图8-23. VCONN Current Limiting Switch On Resistance vs
图8-24. VCONN Switch Current Limit vs Junction Temperature
Junction Temperature
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8.8 Typical Characteristics (continued)
Unless otherwise specified the following conditions apply: VIN = 13.5 V, fSW = 400 kHz, L = 8.2 µH, COUT_CSP = 66 µF,
COUT_CSN = 0.1 µF, CBUS = 1 µF, TA = 25 °C.
400
360
320
280
240
200
160
120
6.8
6.6
6.4
6.2
6
UFP 1.5A
UFP 3A
5.8
5.6
5.4
-50
-25
0
25
Temperature (C)
50
75
100
125
150
-50
-25
0
25
Temperature (C)
50
75
100
125
150
D021
D022
图8-25. CC Sourcing Current vs Junction Temperature
图8-26. CC1 Overvoltage Protection Threshold vs Junction
Temperature
Measured on TPS25830-Q1 EVM with 10-cm cable
Measured Source with 10-cm cable
图8-28. Through the TPS25830A-Q1 Data Switch
图8-27. Bypassing the TPS25830A-Q1 Data Switch
图8-29. Data Transmission Characteristics vs Frequency
图8-30. Off-State Data-Switch Isolation vs Frequency
(TPS25830A-Q1)
(TPS25830A-Q1)
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8.8 Typical Characteristics (continued)
Unless otherwise specified the following conditions apply: VIN = 13.5 V, fSW = 400 kHz, L = 8.2 µH, COUT_CSP = 66 µF,
COUT_CSN = 0.1 µF, CBUS = 1 µF, TA = 25 °C.
图8-31. On-State Cross-Channel Isolation vs Frequency (TPS25830A-Q1)
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9 Parameter Measurement Information
OUT
90%
tf
R(L)
tr
C(L)
V(OUT)
10%
图9-1. VCONN Switch Rise-Fall Test Load Figure
图9-2. VCONN Switch Rise-Fall Timing
IOS
90%
tr
tf
VLS_GD
I(OUT)
10%
t(IOS)
图9-4. NFET Gate Drive Rise and Fall Time
图9-3. Short-Circuit Parameters
0.5m AWG28
0.5m AWG28
10cm AWG18
0.5m AWG28
0.5m AWG28
0.5m AWG28
Manually Hot-short
PSIL040
18V
OUT
DP_IN
DM_IN
27 mF
35V
CC1
CC2
GND
GND
图9-5. Short-to-Battery System Test Setup
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10 Detailed Description
10.1 Overview
The TPS2583xA-Q1 are full-featured solutions for implementing a compact USB charging port with support for
both Type-C and BC1.2 standards. Both devices contain an efficient 36-V buck regulator power source capable
of providing up to 3.5 A of output current at 5.10 V (nominal). System designers can optimize efficiency or
solution size through careful selection of switching frequency over the range of 300 to 2200 kHz with sufficient
margin to operate above or below the AM radio frequency band. In devices, the buck regulator operates in
forced PWM mode ensuring fixed switching frequency regardless of load current. Spread-spectrum frequency
dithering reduces harmonic peaks of the switching frequency potentially simplifying EMI filter design and easing
compliance.
Current sensing with a precision high-side current sense amplifier enables an accurate, user programmable
overcurrent limit setting; and programmable linear cable compensation to overcome IR losses when powering
remote USB ports.
The CTRL1 and CTRL2 pins set the operating mode for the TPS2583xA-Q1 device. The device can support
CDP, SDP or Client configurations.
The TPS25830A-Q1 integrates high band-width (800 MHz) USB switches, includes short to VBAT and short to
VBUS protection as well as IEC61000-4-2 electrostatic discharge clamps to protect the host from potentially
damaging overvoltage conditions.
The TPS25832A-Q1 integrates high band-width (800 MHz) USB switches, includes short to VBUS protection as
well as IEC61000-4-2 electrostatic discharge clamps, but does not support short-to-VBAT protection.
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10.2 Functional Block Diagram
RSNS
RSET
BOOT
SW
PGND
CSP
CSN/OUT
(32)
(28, 29, 30, 31)
(25, 26, 27)
(14)
(13)
(1,2,3)
(11) IMON
IN
Output Voltage
Regulation, Cable
Compensation and
Current Limit
œ
RIM ON
VCC (21)
INT. REG.
BIAS
+
1 V
LS Current
Sense
(12)
ILIMIT
RILIMIT
HS Current
Sense
Driver
RT/SYNC
(9)
OSC&PLL
OV
Control
Logic
PWM
Comparator
Slope
Comp
œ
+
+
Optional
ꢀ
Softstart
VREF
(4)
EN/UVLO
Enable
Logic
Compensation
Network
Shutdown
(5)
(6)
CTRL1
CTRL2
Charge
Pump and
Gate Drivers
(10) LS_GD
(15) BUS
(16)
(23)
AGND
BUS Control
/LD_DET
Fault Conditions
/THERM_WARN
Control and
Fault Logic
(20) CC1
(19) CC2
(22)
(24)
VCC
/POL
CC and
VCONN Control
/FAULT
CDP, SDP
(7)
(8)
DP_OUT
DM_OUT
(18)
DP_IN
(17) DM_IN
10.3 Feature Description
10.3.1 Buck Regulator
The following operating description of the TPS2583xA-Q1 will refer to the 节 10.2 and to the waveforms in 图
10-1. TPS2583xA-Q1 is a step-down synchronous buck regulator with integrated high-side (HS) and low-side
(LS) switches (synchronous rectifier). The TPS2583xA-Q1 supplies a regulated output voltage by turning on the
HS and LS NMOS switches with controlled duty cycle. During high-side switch ON time, the SW pin voltage
swings up to approximately VIN, and the inductor current iL increase with linear slope (VIN –VOUT) / L. When the
HS switch is turned off by the control logic, the LS switch is turned on after an anti-shoot-through dead time.
Inductor current discharges through the LS switch with a slope of –VOUT / L. The control parameter of a buck
converter is defined as Duty Cycle D = tON / TSW, where tON is the high-side switch ON time and TSW is the
switching period. The regulator control loop maintains a constant output voltage by adjusting the duty cycle D. In
an ideal buck converter, where losses are ignored, D is proportional to the output voltage and inversely
proportional to the input voltage: D = VOUT / VIN.
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VSW
VIN
D = tON/ TSW
tON
tOFF
t
0
-VD
TSW
iL
ILPK
IOUT
DiL
t
0
图10-1. SW Node and Inductor Current Waveforms in Continuous Conduction Mode (CCM)
The TPS2583xA-Q1 employs fixed frequency peak current mode control. A voltage feedback loop is used to get
accurate DC voltage regulation by adjusting the peak current command based on voltage offset. The peak
inductor current is sensed from the high-side switch and compared to the peak current threshold to control the
ON time of the high-side switch. The voltage feedback loop is internally compensated, which allows for fewer
external components, makes it easy to design, and provides stable operation with a reasonable combination of
output capacitors. TPS2583xA-Q1 operates in FPWM mode for low output voltage ripple, tight output voltage
regulation, and constant switching frequency.
10.3.2 Enable/UVLO and Start-Up
The voltage on the EN/UVLO pin controls the ON or OFF operation of TPS2583xA-Q1. An EN/UVLO pin voltage
higher than VEN/UVLO-H is required to start the internal regulator and begin monitoring the CCn lines for a valid
Type-C connection. The internal USB monitoring circuitry is on when VIN is within the operation range and the
EN/UVLO threshold is cleared; however, the buck regulator does not begin operation until a valid USB Type-C
detection has been made. This feature ensures the "cold socket" (0 V) USB Type-C VBUS requirement is met.
The EN/UVLO pin is an input and cannot be left open or floating. The simplest way to enable the operation of the
TPS2583xA-Q1 is to connect the EN to VIN. This connection allows self-start-up of the TPS2583xA-Q1 when VIN
is within the operation range.
DP and DM data switch will also be turned on after the EN/UVLO pin set high.
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EN
VEN/UVLO-H
VEN/UVLO-H œ VEN/UVLO-HYS
VEN-VCC-H
VEN-VCC-L
VCC
5V
0
VCSN/OUT
VCSN/OUT
0
图10-2. Precision Enable Behavior
Many applications will benefit from the employment of an enable divider RENT and RENB (图 10-3) to establish a
precision system UVLO level for the TPS2583xA. The system UVLO can be used for sequencing, ensuring
reliable operation, or supply protection, such as a battery discharge level. To ensure the USB port VBUS is within
the 5-V operating range as required for USB compliance (for the latest USB specifications and requirements,
refer to USB.org), TI suggest that the RENT and RENB resistors be chosen so that the TPS2583xA-Q1 enables
when VIN is approximately 6 V. Considering the drop out voltage of the buck regulator and IR loses in the
system, 6 V provides adequate margin to maintain VBUS within USB specifications. If system requirements such
as a warm crank (start) automotive scenario require operation with VIN < 6 V, the values of RENT and RENB can
be calculated assuming a lower VIN. An external logic signal can also be used to drive EN/UVLO input when a
microcontroller is present and it is desirable to enable or disable the USB port remotely for other reasons.
IN
RENT
EN
RENB
图10-3. System UVLO by Enable Divider
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UVLO configuration using external resistors is governed by the following equations:
(1)
(2)
Example:
VIN(ON) = 6 V (user choice)
RENB = 5 kΩ(user choice)
RENT = [(VIN(ON) / VEN/UVLO_H) –1] × RENB= 19.6 kΩ. Choose standard 20 kΩ.
Therefore VIN(OFF) = 6 V × [1 –(0.09 V / 1.2 V)] = 5.55 V
A typical start-up waveform is shown in 图 10-4, indicating typical timings when Rd connected to CC line. The
rise time of DCDC VBUS voltage is about 5 ms.
EN,
5V/Div
VIN
5V/Div
VBUS,
5V/Div
VCC,
5V/Div
40ms/Div
图10-4. Typical Start-Up Behavior, VIN = 13.5 V, CC1 = Rd, RIMON = 12.6 kΩ
For TPS2583xA-Q1, the pin voltage must meet the requirement below during 150 ms (typical) Rd assert deglitch
time, see 图10-5:
• VBUS < 0.8 V (typical), per Type-C requirement;
• VDx_OUT < 2.2 V (typical);
• VDx_IN < 1.5 V (typical);
After the TPS2583xA-Q1 Rd assert deglitch time, there is no additional requirement on these pins. In a real
application, LD_DET pin can be used to configure the timing sequence.
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VIN/EN
Rd assert here
CC1/CC2
Dx_OUT
VBUS
Must < 2.2V
5}v[š ꢀꢁŒꢂ
VBUS must < 0.8V
deglitch time
150ms (typ)
DP/DM
Date Switch
ON
OFF
LD_DET
图10-5. TPS2583xA-Q1 Pin Voltage Requirement Under CDP/SDP Mode
10.3.3 Switching Frequency and Synchronization (RT/SYNC)
The switching frequency of the TPS2583xA-Q1 can be programmed by the resistor RT from the RT/SYNC pin
and GND pin. To determine the RT resistance, for a given switching frequency, use 方程式3:
4ËÍ G3 L tyyxy H B?5ä4995:G*V;
æê
(3)
70
65
60
55
50
45
40
35
30
25
20
15
10
5
200 400 600 800 1000 1200 1400 1600 1800 2000 2200
Switching Frequency (kHz)
D024
图10-6. RT Set Resistor vs Switching Frequency
表10-1 lists typical RT resistors values.
表10-1. Setting the Switching Frequency with RT
SWITCHING FREQUENCY (kHz)
RT (kΩ)
68.1
300
400
49.9
39.2
500
19.1
1000
1500
2000
2100
2200
12.4
9.09
8.66
8.25
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TPS2583xA-Q1 switching action can be synchronized to an external clock from 300 kHz to 2.3 MHz.
The RT/SYNC pin can be used to synchronize the internal oscillator to an external clock. The internal oscillator
can be synchronized by AC coupling a positive edge into the RT/SYNC pin. The AC coupled peak-to-peak
voltage at the RT/SYNC pin must exceed the SYNC amplitude threshold of 2.0 V (minimum) to trip the internal
synchronization pulse detector, and the minimum SYNC clock ON and OFF time must be longer than 100 ns
(typical). When using a low impedance signal source, the frequency setting resistor RT is connected in parallel
with an AC coupling capacitor CCOUP to a termination resistor RTERM (for example, 50 Ω). The two resistors in
series provide the default frequency setting resistance when the signal source is turned off. A 10-pF ceramic
capacitor can be used for CCOUP. 图10-7 shows the device synchronized to an external clock.
CCOUP
RT
PLL
PLL
Lo-Z
Clock
Hi-Z
Clock
Source
RTERM
RT
RT/SYNC
RT/SYNC
Source
图10-7. Synchronize to External Clock
In order to avoid AM radio frequency band and maintain proper regulation when minimum ON-time or minimum
OFF-time is reached, the TPS2583xA-Q1 implements a frequency foldback scheme depending on VIN voltage,
refer to 图8-11.
• When 8 V < VIN ≤19 V, the switching frequency of TPS2583xA-Q1 is determined by RT resistor or external
sync clock.
• When VIN ≤8 V, the switching frequency of TPS2583xA-Q1 is set to default 420 kHz, regardless of RT
resistor setting or external sync clock.
• When VIN > 19 V, the switching frequency of TPS2583xA-Q1 is set to default 420 kHz, regardless of RT
resistor setting or external sync clock.
图10-8, 图10-9 and 图10-10 show the device switching frequency and behavior under different VIN voltage and
RT = 8.66 kΩ.
图 10-11, 图 10-12 and 图 10-13 show the device switching frequency and behavior under different VIN voltage
and synchronized to an external 2.1-M system clock.
VIN,
10V/Div
VIN,
10V/Div
SW,
10V/Div
SW,
10V/Div
Inductor Current,
5A/Div
Inductor Current,
5A/Div
1us/Div
1us/Div
VIN = 7.5 V
L = 3.3 uH
ILOAD = 3 A
VIN = 13.5 V
L = 3.3 uH
ILOAD = 3 A
图10-8. Switching Frequency When RT = 8.66 kΩ 图10-9. Switching Frequency When RT = 8.66 kΩ
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VIN, 5V/Div
VIN,
10V/Div
SW,
10V/Div
Sync, 2V/Div
SW,
10V/Div
Inductor Current,
5A/Div
Inductor Current,
5A/Div
1us/Div
1us/Div
VIN = 20 V
L = 3.3 uH
ILOAD = 3 A
VIN = 7.5 V
L = 3.3 uH
ILOAD = 3 A
图10-10. Switching Frequency When RT = 8.66 kΩ
图10-11. Synchronizing to External 2.1-MHz Clock
VIN, 10V/Div
Sync, 2V/Div
VIN, 10V/Div
Sync, 2V/Div
SW,
10V/Div
SW,
10V/Div
Inductor Current,
5A/Div
Inductor Current,
5A/Div
1us/Div
1us/Div
VIN = 20 V
L = 3.3 uH
ILOAD = 3 A
VIN = 13.5 V
L = 3.3 uH
ILOAD = 3 A
图10-13. Synchronizing to External 2.1-MHz Clock
图10-12. Synchronizing to External 2.1-MHz Clock
10.3.4 Spread-Spectrum Operation
In order to reduce EMI, the TPS2583xA-Q1 introduces frequency spread spectrum. The spread spectrum is
used to eliminate peak emissions at specific frequencies by spreading emissions across a wider range of
frequencies than a part with fixed frequency operation. In most systems, low frequency conducted emissions
from the first few harmonics of the switching frequency can be easily filtered. A more difficult design criterion is
reduction of emissions at higher harmonics which fall in the FM band. These harmonics often couple to the
environment through electric fields around the switch node. The TPS2583xA-Q1 devices use ±6% spread of
switching frequencies with 1/256 swing frequency.
The spread spectrum function is only available when using the TPS2583xA-Q1 internal oscillator. If the
RT/SYNC pin is synchronized to an external clock, the spread spectrum function will be turned off.
10.3.5 VCC, VCC_UVLO
The TPS2583xA-Q1 integrates an internal LDO to generate VCC for control circuitry and MOSFET drivers. The
nominal voltage for VCC is 5 V. The VCC pin is the output of an LDO and must be properly bypassed. A high
quality ceramic capacitor with a value of 2.2 µF to 4.7 µF, 10 V or higher rated voltage should be placed as close
as possible to VCC and grounded to the PGND ground pin. The VCC output pin should not be loaded with more
than 5 mA, or shorted to ground during operation.
In applications where VCONN support is required, the VCC pin can be over-driven with an external 5-V LDO
capable of sourcing at least 300 mA. In this operating mode the external LDO is the source for the buck low-side
switch gate drive as well as power to the internal VCONN mux.
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Note if using external 5-V LDO for VCONN power, the timing sequence below must be required. External VCONN
power can not be enabled before the TPS2583xA-Q1 is enabled, external VCONN must be disabled before the
TPS2583xA-Q1 is disabled. In a real application, customer can tie the EN of external 5-V LDO and EN of
TPS2583xA-Q1 together to meet the timing requirement.
IN
EN/UVLO
RT/SYNC
TPS2583x-Q1
VCC
LDO
/FAULT
/LD_DET
/POL
图10-14. VCONN Source Using External LDO
10.3.6 Minimum ON-Time, Minimum OFF-Time
Minimum ON-time, TON_MIN, is the smallest duration of time that the HS switch can be on. TON_MIN is typically
105 ns in the TPS2583xA. Minimum OFF-time, TOFF_MIN, is the smallest duration that the HS switch can be off.
TOFF_MIN is typically 80 ns in the TPS2583xA-Q1. In CCM (FPWM) operation, TON_MIN and TOFF_MIN limit the
voltage conversion range given a selected switching frequency.
The minimum duty cycle allowed is:
(4)
And the maximum duty cycle allowed is:
(5)
Given fixed TON_MIN and TOFF_MIN, the higher the switching frequency the narrower the range of the allowed duty
cycle.
10.3.7 Internal Compensation
The TPS2583xA-Q1 is internally compensated as shown in 图10-1. The internal compensation is designed such
that the loop response is stable over the specified operating frequency and output voltage range. The
TPS2583x-Q1 is optimized for transient response over the range 300 kHz ≤fsw ≤2300 kHz.
10.3.8 Bootstrap Voltage (BOOT)
The TPS2583xA-Q1 provides an integrated bootstrap voltage regulator. A small capacitor between the BOOT
and SW pins provides the gate drive voltage for the high-side MOSFET. The BOOT capacitor is refreshed when
the high-side MOSFET is off and the low-side switch conducts. The recommended value of the BOOT capacitor
is 0.1 μF. A ceramic capacitor with an X7R or X5R grade dielectric with a voltage rating of 10 V or higher is
recommended for stable performance over temperature and voltage.
10.3.9 RSNS, RSET, RILIMIT and RIMON
The programmable current limit threshold and full-scale cable compensation voltage are determined by the
values of the RSNS, RSET, RILIMIT, and RIMON resistors. Refer to 图10-15.
• RSNS is the current sense resistor. The recommended voltage across RSNS under current limit should be
approximately 50 mV as a compromise between accuracy and power dissipation. For example, if current
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limiting is desired for IOUT(MAX) ≥3.3 A, then RSNS = 0.05 V / 3.3 A = 0.01515 Ω. Choose a standard value of
15 mΩ.
• RSET determines the input current to the transconductance amplifier and current mirror. The amplifier
balances the voltage to be equal to that across RSNS. Choose a RSET value to produce an ISET current
between 75–180 µA at the desired IOUT(MAX). Considering 50 mV across RSET, a value of 300 Ωwill provide
approximately 166 µA of ISET current to the amplifier and mirror circuit. Care should be taken to limit the ISET
current below 200 µA to avoid saturating the internal amplifier circuit.
• RILIMIT in conjunction with the 0.5 × ISET current produces a voltage on the ILIMIT pin which is proportional to
the load current flowing in RSNS. For details on setting the current limit, see 节10.3.10.1.
• RIMON in conjunction with the 0.5 × ISET current produces a voltage on the IMON pin which is proportional to
the load current flowing in RSNS. For details on setting the current limit, see 节10.3.12.
(1): VSNS = ILOAD x RSNS
ILOAD
(2): VSNS ~= VSET
(by op amp)
(3): ISET = VSET / RSET = VSNS / RSET
RSNS
+ 50mV -
RSET
CSP
CSN/OUT
RT
RM
RB
+
Low Offset
Amp
œ
IMON
ILIMIT
IIMON = 0.5 x ISET
ISET
+
RIMON
œ
RS = RT
IILIMIT = 0.5 x ISET
RILIMIT
œ
+
1V
Soft
Start
œ
+
+
VCOMP
1V
VILIMIT = 1V (current limit by Buck)
VILIMIT = 0.49V (current limit by NFET)
LS_GD
œ
+
0.49V
BUS
图10-15. Current Limit and Cable Compensation Circuit
10.3.10 Overcurrent and Short Circuit Protection
For maximum versatility, TPS2583xA-Q1 includes both a precision, programmable current limit and cycle-by-
cycle current limit to protect the USB port from extreme overload conditions. In most applications the RILIMIT
resistor in conjunction with the selection of RSNS and RSET will determine the overload threshold. The cycle-by-
cycle current limit will serve as a backup means of protection in the event RILMIT is shorted to ground disabling
the programmable current limit function.
TPS2583xA-Q1 also implements a internal circuit to meet MFi over-current requirement.
10.3.10.1 Current Limit Setting using RILIMIT
Refer to 图10-15. The TPS2583xA-Q1 can establish current limit by two methods.
• Using external a single or back-to-back N-Channel MOFETs between CSN/OUT and BUS: A voltage of 0.49
V on the ILIMIT pin initiates current limiting using the external MOSFET by decreasing the LS_GD voltage
causing the FET to operate in the saturation region. To protect the MOSFETs from damage a hiccup timer
limits the duty cycle to prevent thermal runaway. Refer to the 节8.7 for MOSFET hiccup timing.
• Buck average current limit: No MOSFET, CSN/OUT connected to BUS. In this configuration a voltage of 1 V
across RILIMIT on the ILIMIT pin initiates average current limiting of the buck regulator.
The detailed current limit is described below:
• With external MOSFET 图10-16:
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– Isolating a fault on the USB port from other loads connected to the CSP output of the TPS2583xA-Q1. In
some applications, it may be useful to power additional circuitry (example USB HUB) from the output of
the TPS2583xA-Q1 and maintain operation of these circuits in the event of a short circuit downstream of
the BUS pin. To prevent triggering the MOSFET current limit below the programmed ILIMIT threshold,
external circuits should be supplied after the inductor and before the current sense resistor, RSNS
.
– After RSNS and RSET are determined and the full load ISET current is known, the resistor value RILIMIT can
be determined by:
(6)
– In most case, the recommended voltage across RSNS under current limit should be approximately 50 mV
as a compromise between accuracy and power dissipation. While in some application, RILIMIT is the only
resistor that can be changed to achieve different current limit. Typical RILIMIT resistors value are listed in 表
10-2 given the condition RSNS= 15 mΩand RSET = 300 Ω.
表10-2. Setting the Current Limit with RILIMIT
RILIMIT (kΩ)
CURRENT-LIMIT THRESHOLD (mA)
WITH EXTERNAL MOSFET
BUCK AVERAGE
700
26.1
12.7
11.3
7.15
6.49
5.62
5.11
53.6
26.1
22.6
14.7
13
1500
1700
2700
3000
3400
3800
11.5
10.5
• Buck Average Current Limit 图10-17:
1. CSN/OUT connected directly to BUS. The TPS2583xA-Q1 can operate as a stand-alone USB charging
port. In this configuration, the internal buck regulator operates with average current limiting as
programmed by the ILIMIT pin, potentially producing less heat compared to N-channel MOSFET current
limiting.
2. After RSNS and RSET are determined and the full load ISET current is known, the resistor value RILIMIT can
be determined by:
(7)
3. Typical RILIMIT resistors value are listed in 图10-16, given the condition RSNS= 15 mΩand RSET = 300
Ω.
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CBOOT
CBOOT
To auxiliary
loads
VIN
VIN
BOOT
BOOT
L
L
RSNS
IN
RSNS
IN
SW
CSP
SW
RSET
EN/UVLO
RT/SYNC
EN/UVLO
RT/SYNC
RSET
CSP
CSN/OUT
CSN/OUT
VCC
VCC
TPS2583xA-Q1
TPS2583xA-Q1
LS_GD
FAULT
FAULT
LS_GD
LD_DET
LD_DET
POL
POL
BUS
CC1
CC2
BUS
CC1
CC2
CTRL1
CTRL2
CTRL1
CTRL2
DP_OUT
DM_OUT
DP_IN
DM_IN
DP_IN
DM_IN
DP_OUT
DM_OUT
IMON ILIMIT
AGND PGND
AGND PGND
IMON ILIMIT
图10-16. TPS2583xA-Q1 Current Limit With
图10-17. TPS2583xA-Q1 Buck Average Current
External MOSFET
Limit
10.3.10.2 Current Limit Setting for MFI OCP
Apple has defined new overcurrent protection requirements in its latest MFI spec. TPS2583xA-Q1 also
implements a novel current limit inside to meet the MFI OC requirement.
The settings are described below:
• With external MOSFET: When TPS2583xA-Q1 uses an external FET for current limit, it actually has two
current limit threshold. The 1st threshold ILIMIT1 is determined by RLIMIT according to equation 6. The 2nd
threshold ILIMIT2 equals to 1.6 times of ILIMIT1
.
– Case 1: If the load current IBUS is in the range ILIMIT2 > IBUS > ILIMIT1, and the duration < tOC_HIC_DEG, the
external MOSFET will remain on and VBUS will stay unchanged, as shown in 图10-18.
IBUS(A)
V
BUS(V)
5
ILIMIT2
ILIMIT1
T < tOC_HIC_DEG
0
t
图10-18. Two level Current Limit Methodology with ext MOSFET Case 1
– Case 2: If the load current IBUS is in the range ILIMIT2 > IBUS > ILIMIT1 and the duration > tOC_HIC_DEG, the
external MOSFET will current limit to ILIMIT1, then enter hiccup mode with 2 ms of on-time and 263 ms of
off-time, as shown in 图10-19. When the load current decreases below ILIMIT1 and continues >
tOC_HIC_RST, the external MOSFET will resume always on.
IBUS(A)
V
BUS(V)
5
ILIMIT2
ILIMIT1
T = tOC_HIC_DEG
0
EXT FET
hiccup OFF
EXT FET
hiccup ON
EXT FET
hiccup OFF
EXT FET
hiccup ON
t
图10-19. Two Level Current Limit Methodology with ext MOSFET Case 2
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– Case 3: If the load current IBUS > ILIMIT2, the external MOSFET will current limit to ILIMIT1 immediately, then
enter hiccup mode with 2 ms of on-time and 263 ms of off-time, as shown in 图10-20. When the load
current IBUS < ILIMIT1 for tOC_HIC_RST, the external MOSFET will resume always on.
IBUS(A)
V
BUS(V)
5
ILIMIT2
ILIMIT1
0
EXT FET
hiccup OFF
EXT FET
hiccup ON
EXT FET
hiccup OFF
EXT FET
hiccup ON
t
图10-20. Two Level Current Limit Methodology with ext MOSFET Case 3
• Buck average current limit
– When TPS2583xA-Q1 uses Buck average current limit, it has only one current limit threshold determined
by RLIMIT according to 方程式6.
– In order to meet the MFI OC requirement, an RC network is needed in parallel with Rlimit resistor as shown
in 图10-21. Suggest selecting Rpara = Rlimit, Cpara = 100 nF.
ILIMIT pin
C_para
R_ILIMIT
R_para=R_ILIMIT
图10-21. RC Network in Parallel with Rlimit
10.3.10.3 Buck Average Current Limit Design Example
To start the procedure, the ILOAD(MAX), RSNS, RSET, must be known.
1. Determine ILIMIT, usually choose ILIMIT= ILOAD(MAX) / (1 –10%).
2. Determine RSNS to achieve 50 mV at current limit. For 3-A Type-C load current, choose ILIMIT = 3.3 A. RSNS
(0.05 V / 3.3 A) = 15 mΩ.
=
3. Choose RSET = 300 Ω
4. According to 方程式6, RLIMIT = 300 / (0.5 × ( 3.3 × 0.015 + 0.0007)) = 11.95 kΩ.
5. Choose standard 11.8 kΩ.
10.3.10.4 External MOSFET Gate Drivers
The TPS2583xA-Q1 has integrated NFET gate drivers and can support current limit with external NFET. Refer to
图10-16.
The LS_GD pin of TPS2583xA-Q1 can source 3-uA (typical) current to enhance the external MOSFET. A 6.2-V
clamp between LS_GD and CSN/OUT pin limits the gate-to-source voltage. During DCDC start up, the LS_GD
gate drivers begin to source current after VCSN/OUT reach 3 V. If the VCSN/OUT > 7.5 V or VBUS > 7 V under
overvoltage condition, the LS_GD will turn off immediately with 35-uA (typical) sink current.
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If load current above NFET current limit threshold, LS_GD will also turn off the NFET after 2 ms (typical) and
enter hiccup mode to protect NFET from thermal issue. Refer to 图11-26 for application waveform.
In real application, if VBUS short to VBAT function is needed, 20-V back-to-back NFET is suggested in circuit
design.
10.3.10.5 Cycle-by-Cycle Buck Current Limit
The buck regulator cycle-by-cycle current limit on both the peak and valley of the inductor current. Hiccup mode
will be activated if a fault condition persists to prevent over-heating.
High-side MOSFET overcurrent protection is implemented by the nature of the Peak Current Mode control. The
HS switch current is sensed when the HS is turned on after a set blanking time. The HS switch current is
compared to the output of the Error Amplifier (EA) minus slope compensation every switching cycle. Refer to
Functional Block Diagram for more details. The peak current of HS switch is limited by a clamped maximum
peak current threshold IHS_LIMIT which is constant. So the peak current limit of the high-side switch is not affected
by the slope compensation and remains constant over the full duty cycle range.
The current going through LS MOSFET is also sensed and monitored. When the LS switch turns on, the inductor
current begins to ramp down. The LS switch will not be turned OFF at the end of a switching cycle if its current is
above the LS current limit ILS_LIMIT. The LS switch will be kept ON so that inductor current keeps ramping down,
until the inductor current ramps below the LS current limit ILS_LIMIT. Then the LS switch will be turned OFF and
the HS switch will be turned on after a dead time. This is somewhat different than the more typical peak current
limit, and results in Equation 8 for the maximum load current.
(8)
If VCSN/OUT < 2-V typical due to a short circuit for 128 consecutive cycles, hiccup current protection mode will be
activated. In hiccup mode, the regulator will be shut down and kept off for 118 ms typically, then TPS2583xA-Q1
will go through a normal re-start with soft start again. If the short-circuit condition remains, hiccup will repeat until
the fault condition is removed. Hiccup mode reduces power dissipation under severe overcurrent conditions,
prevents over-heating and potential damage to the device, and serves as a backup to the programmable current
limit, see the Current Limit Setting using RILIMIT section. Once the output short is removed, the hiccup delay is
passed, the output voltage recovers normally as shown in Figure 11-23.
10.3.11 Overvoltage, IEC and Short to Battery Protection
The TPS25830A-Q1 integrates OVP and short to battery protection on VBUS, CC1, CC2, DM_IN and DP_IN
pins. These pins can withstand voltage up to 18 V, and can protect upstream processor or Hub data line when
overvoltage or short to battery condition occurs. Refer to 图9-5 for short to battery test setup.
For more detailed TPS2583x-Q1 Short to Battery consideration and test report, please refer to the TPS2583x-Q1
and TPS2584x-Q1 Short-to-Battery Application application report.
The TPS2583xA-Q1 also integrates IEC ESD cell on CC1, CC2, DP_IN and DM_IN pins.
10.3.11.1 VBUS and VCSN/OUT Overvoltage Protection
The TPS2583xA-Q1 integrates overvoltage protection on both BUS and CSN/OUT pin to meet different
application requirement.
BUS pin can withstand up to 18 V, and the OVP threshold is 7-V typical. Once overvoltage is detected on BUS
pin, the LS_GD will turn off immediately, also FAULT asserts after 8-ms deglitch time. Once the excessive
voltage is removed, the LS_GD will turn on again and FAULT deasserts.
CSN/OUT pin can withstand up to 20 V, and the OVP threshold is 7.5-V typical. Once overvoltage is detected on
CSN/OUT pin, the buck converter will stop regulation, also LS_GD will turn off immediately. Once the excessive
voltage is removed, the buck converter will resume and LS_GD turn on again.
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CBOOT
CBOOT
To auxiliary
loads
VIN
VIN
BOOT
BOOT
L
L
RSNS
RSNS
IN
IN
SW
RSET
EN/UVLO
RT/SYNC
CSP
EN/UVLO
RT/SYNC
RSET
CSP
CSN/OUT
CSN/OUT
VCC
VCC
TPS2583xA-Q1
TPS2583xA-Q1
LS_GD
FAULT
LS_GD
FAULT
0.22uF
0.22uF
LD_DET
LD_DET
RBUS= 10Ω
RBUS= 100Ω
POL
BUS
CC1
CC2
POL
BUS
CC1
CC2
CTRL1
CTRL2
CTRL1
CTRL2
DP_OUT
DM_OUT
DP_IN
DM_IN
DP_OUT
DM_OUT
DP_IN
DM_IN
IMON ILIMIT
AGND PGND
IMON ILIMIT
AGND PGND
图10-22. Current Limit with External MOSFET
图10-23. Buck Average Current Limit
TPS2583xA-Q1 is configured in external FET current limit mode as shown in 图 10-22. When short to battery
occurs on BUS_Connector, the external MOSFET will be turn off immediately after BUS pin detect overvoltage.
The FAULT signal will assert after 8ms deglitch time, see 图 11-35. With Back-to-back FET, the TPS2583xA-Q1
can withstand short to battery event even when Vin is off. A 10-Ω 0805 resistor is recommended between BUS
pin and BUS_Connector.
TPS2583xA-Q1 is configured in buck average current limit mode as shown in 图 10-23. When short to battery
occurs on BUS_Connector, the buck regulator will stop switching after CSN/OUT pin detect overvoltage. The
FAULT signal will also assert after 8-ms deglitch time. A 100-Ω0805 resistor is recommended between BUS pin
and BUS_Connector in buck average current limit mode.
10.3.11.2 DP_IN and DM_IN Protection
DP_IN and DM_IN protection consists of IEC ESD and overvoltage protection.
The DP_IN and DM_IN pins integrate an IEC ESD cell to provide ESD protection up to ±15-kV air discharge and
±8-kV contact discharge per IEC 61000-4-2 (see the ESD Ratings section for test conditions). The IEC ESD
performance of the TPS2583xA-Q1 device depends on the capacitance connected from BUS pin to GND. A
0.22-µF capacitor placed close to the BUS pin is recommended.
The ESD stress seen at DP_IN and DM_IN is impacted by many external factors like the parasitic resistance and
inductance between ESD test points and the DP_IN and DM_IN pins. For air discharge, the temperature and
humidity of the environment can cause some difference, so the IEC performance should always be verified in the
end-application circuit.
Overvoltage protection (OVP) is provided for short-to-VBUS or short-to-battery conditions in the vehicle harness,
preventing damage to the upstream USB transceiver or hub. When the voltage on DP_IN or DM_IN exceeds 3.9
V (typical), the TPS25830A-Q1 device immediately turn off DP/DM switch, and responds to block the high-
voltage reverse connection to DP_OUT and DM_OUT. FAULT signal will assert after 8-ms deglitch time (see
Figure 11-37).
For DP_IN and DM_IN, when OVP is triggered, the device turns on an internal discharge path with 416-kΩ
resistance to ground. On removal of the overvoltage condition, the pin automatically turns off this discharge path
and returns to normal operation by turning on the previously affected analog switch.
10.3.11.3 CC IEC and OVP Protection
CCx protection consists of IEC ESD and overvoltage protection.
The CC pins integrate an IEC ESD cell to provide ESD protection up to ±15-kV air discharge and ±8-kV contact
discharge per IEC 61000-4-2 (see the 节 8.2 section for test conditions). Additional 0.22-uF capacitor placed
close to the CC pin is recommended in real application.
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Overvoltage protection (OVP) is provided for short-to-VBUS or short-to-battery conditions in the vehicle harness.
When the voltage on CC1 or CC2 exceeds 6.1 V (typical), the TPS25830A-Q1 device immediately shuts off CC
line. FAULT signal will assert after 8-ms deglitch time (see 图11-37).
For CC1 and CC2, when OVP is triggered, the device turns on an internal discharge path with 55-kΩ resistance
to ground. On removal of the overvoltage condition, the pin automatically turns off this discharge path and
returns to normal operation.
10.3.12 Cable Compensation
When a load draws current through a long or thin wire, there is an IR drop that reduces the voltage delivered to
the load. Cable droop compensation linearly increases the voltage at the CSN/OUT pin of TPS2583xA-Q1 as
load current increases with the objective of maintaining VBUS_CON (the bus voltage at the USB connector) at 5 V,
regardless of load conditions. Most portable devices charge at maximum current when 5 V is present at the USB
connector. 图 10-24 provides an example of resistor drops encountered when designing an automotive USB
system with a remote USB connector location.
R(pcb2_VBUS) R(USBconn_VBUS)
R(conn2_VBUS)
R(conn1_VBUS)
R(pcb1_VBUS)
R(cable_VBUS)
Rdson(NFET)
RSNS
LS_GD
BOOT
SW
RSET
CSP
CSN/OUT
+
VBUS_CON
-
+
VBUS
-
R(wire)
BUS
PGND
TPS2583x-Q1
PCB 2
PCB 1
R(USBconn_GND)
R(pcb2_GND)
R(conn2_GND)
R(pcb1_GND)
R(conn1_GND)
R(cable_GND)
R(wire) = R(pcb1_VBUS) + R(conn1_VBUS) + R(cable_VBUS) + R(conn2_VBUS) + R(pcb2_VBUS) + R(USBconn_VBUS) +
R(USBconn_GND) + R(pcb2_GND) + R(conn2_GND) + R(cable_GND) + R(conn1_GND) + R(pcb1_GND)
图10-24. Automotive USB Resistances
The TPS2583xA-Q1 detects the load current and increases the voltage at the CSN/OUT pin to compensate the
IR drop in the charging path according to the gain set by the RSNS, RSET, and RIMON resistors as described in 节
10.3.9.
The amount of cable droop compensation required can be estimated by the following equation: ΔVOUT = (RSNS
+ RDSON_NFET + RWIRE) × IBUS . RIMON is then chosen by RIMON = (ΔVOUT × RSET × 2) / (IBUS × RSNS), where
ΔVOUT is the desired cable droop compensation voltage at full load.
5.x
V(DROP)
VOUT with compensation
VBUS with compensation
VBUS without compensation
3
1
2
Output Current (A)
图10-25. Voltage Drop
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Per 节 10.3.9, in most cases, the recommended voltage across RSNS should be 50 mV. In Type-C application,
typical RIMON resistors value are listed in 表 10-3 given the condition full load current = 3 A, RSNS = 15 mΩ and
RSET = 300 Ω.
表10-3. Setting the Cable Compensation Voltage with RIMON
CABLE COMPENSATION VOLTAGE AT 3-A FULL LOAD (V)
RIMON (kΩ)
0.3
0.6
0.9
1.2
1.5
4.02
8.06
12.1
16.2
20
Pls note that the max cable compensation voltage in TPS2583xA-Q1 is 1.5 V.
10.3.12.1 Cable Compensation Design Example
To start the procedure, the RSNS, RDSON_NFET and wire resistance RWIRE, must be known.
1. Determine RSNS to achieve 50 mV at full current. For 3.3 A (3-A Type-C load current plus approximately 10%
for overcurrent threshold). RSNS = (0.05 V / 3.3 A) = 15 mΩ.
2. RDSON_NFET = 50 mΩ
3. RWIRE = 200 mΩ
4. ΔVOUT = (RSNS + RDSON_NFET + RWIRE) × IBUS = (0.015 + 0.05 + 0.2) × 3 = 0.795 V
5. Choose RSET = 300 Ω
6. RIMON = (ΔVOUT × RSET × 2) / (IBUS × RSNS) = (0.795 × 300 × 2) / (3 × 0.015) = 10.6 kΩ
10.3.13 USB Port Control
The TPS2583xA-Q1include DP_IN, DM_IN, CC1 and CC2 pins for automatic or host facilitated USB port power
management of either a Type-A or Type-C downstream facing connector. See the Device Functional Modes
section for details on configuring the TPS2583xA-Q1.
10.3.14 FAULT Response
The device features an active-low, open-drain fault output. Connect a 100-kΩ pullup resistor from FAULT to
VCC or other suitable I/O voltage. FAULT can be left open or tied to GND when not used.
表10-4 summarizes the conditions that generate a fault and actions taken by the device.
表10-4. Fault and Warning Conditions
EVENT
CONDITION
ACTION
The device regulates current at ISNS either by external NFET
or by the buck regulator control loop.
When current limiting by external NFET, there is NO fault
indicator assertion under minor overload conditions.
When current limiting by buck average current, there is NO
fault indicator assertion under minor overload conditions.
Hard shorts during average buck current limiting may trigger
buck hiccup operation. The FAULT indicator asserts
immediately after NOC cycles in and persists for TOC as
specified in the Cycle-by-Cycle Buck Current Limit section.
NFET or Buck average current limit
implemented per Current Limit Setting using
Overcurrent on OUT
RILIMIT
.
ICSN/OUT > programmed ISNS
.
The device turns on the BUS discharge path in the event of
an overvoltage conditions, and turn off the LS_GD
immediately. The FAULT indicator asserts and de-asserts
with a 8-ms deglitch.
Overvoltage on BUS
VBUS > VBUS_OV
The device immediately shuts off the USB data switches.
The FAULT indicator asserts and de-asserts with a 8-ms
deglitch.
Overvoltage on the data lines DP_IN or DM_IN > VDx_IN_OV
The device immediately shuts off the CC lines. The FAULT
indicator asserts and de-asserts with a 8-ms deglitch.
Overvoltage on CC lines
CC1 or CC2 > VCCx_OV
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表10-4. Fault and Warning Conditions (continued)
EVENT
CONDITION
ACTION
The FAULT indicator asserts and de-asserts with a 8-ms
deglitch. The FAULT indicator remains asserted during the
VCONN overload condition and the VCONN path is not
disabled.
Overcurrent on CC lines
when supplying VCONN
ILOAD_CCn > IOS_CCn
10.3.15 USB Specification Overview
Universal Serial Bus specifications provide critical physical and electrical requirements to electronics
manufacturers of USB capable equipment. Adherence to these specifications during product development
coupled with standardized compliance testing assures very high degrees of interoperability amongst USB
products in the market. Since its inception in the mid 1990s, USB has undergone a number of revisions to
enhance utility and extend functionality. For the most up to date standards, please consult the USB
Implementers Forum (USB-IF).
All USB ports are capable of providing a 5-V output making them a convenient power source for operating and
charging portable devices. USB specification documents outline specific power requirements to ensure
interoperability. In general, a USB 2.0 port host port is required to provide up to 500 mA; a USB 3.0 or USB 3.1
port is required to provide up to 900 mA; ports adhering to the USB Battery Charging 1.2 Specification provide
up to 1500 mA; and newer Type-C ports can provide up to 3000 mA. Though USB standards governing power
requirements exist, some manufacturers of popular portable devices created their own proprietary mechanisms
to extend allowed available current beyond the 1500-mA maximum per BC 1.2. While not officially part of the
standards maintained by the USB-IF, these proprietary mechanisms are recognized and implemented by
manufacturers of USB charging ports.
The TPS2583xA-Q1 device supports five of the most-common USB-charging schemes found in popular hand-
held media and cellular devices.
• USB Type-C (1.5-A and 3-A advertisement)
• USB Battery Charging Specification BC1.2
• Chinese Telecommunications Industry Standard YD/T 1591-2009
• Divider 3 mode
• 1.2-V mode
The BC1.2 specification includes three different port types:
• Standard Downstream Port (SDP)
• Charging Downstream Port (CDP)
• Dedicated Charging Port (DCP)
BC1.2 defines a charging port as a downstream-facing USB port that provides power for charging portable
equipment. Under this definition, CDP and DCP are defined as charging ports.
表10-5 lists the difference between these port types.
表10-5. USB Operating Modes Table
MAXIMUM ALLOWABLE CURRENT
DRAWN BY PORTABLE EQUIPMENT (A)
PORT TYPE
SUPPORTS USB2.0 COMMUNICATION
SDP (USB 2.0)
SDP (USB 3.0 and 3.1)
CDP
YES
YES
YES
NO
0.5
0.9
1.5
1.5
3.0
DCP
TYPE-C
YES
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10.3.16 USB Type-C® Basics
For a detailed description of the Type-C specifications refer to the USB-IF website to download the latest
information. Understanding the basic concepts of the USB Type-C specification will aid in understanding the
operation of the TPS2583xA-Q1 (a DFP device).
USB Type-C removes the need for different plug and receptacle types for host and device functionality. The
Type-C receptacle replaces both Type-A and Type-B receptacle since the Type-C cable is plug-able in either
direction between host and device. A host-to-device logical relationship is maintained via the configuration
channel (CC). Optionally hosts and devices can be either providers or consumers of power when USB Power
Delivery (PD) communication is used to swap roles.
All USB Type-C ports operate in one of below three data modes:
• Host mode: the port can only be host (provider of power)
• Device mode: the port can only be device (consumer of power)
• Dual-Role mode: the port can be either host or device
Port types:
• DFP (Downstream Facing Port): Host
• UFP (Upstream Facing Port): Device
• DRP (Dual-Role Port): Host or Device
Valid DFP-to-UFP connections:
• 表10-6 describes valid DFP-to-UFP connections
• Host to Host or Device to Device have no functions
表10-6. DFP-to-UFP Connections
DEVICE-MODE
HOST-MODE PORT
DUAL-ROLE PORT
PORT
Host-Mode Port
Device-Mode Port
Dual-Role Port
No Function
Works
Works
Works
Works
No Function
Works
Works
Works(1)
(1) This may be automatic or manually driven.
10.3.16.1 Configuration Channel
The function of the configuration channel is to detect connections and configure the interface across the USB
Type-C cables and connectors.
Functionally the Configuration Channel (CC) is used to serve the following purposes:
• Detect connect to the USB ports
• Resolve cable orientation and twist connections to establish USB data bus routing
• Establish DFP and UFP roles between two connected ports
• Discover and configure power: USB Type-C current modes or USB Power Delivery
• Discovery and configure optional Alternate and Accessory modes
• Enhances flexibility and ease of use
Typical flow of DFP to UFP configuration is shown in 图10-26:
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图10-26. Flow of DFP to UFP Configuration
10.3.16.2 Detecting a Connection
DFPs and DRPs fulfill the role of detecting a valid connection over USB Type-C. 图 10-27 shows a DFP to UFP
connection made with Type C cable. As shown in 图 10-27, the detection concept is based on being able to
detect terminations in the product which has been attached. A pull-up and pull-down termination model is used.
A pull-up termination can be replaced by a current source. TPS2583xA-Q1 devices use current sources in lieu of
RP as allowed by the Type-C specification.
• In the DFP-UFP connection the DFP monitors both CC pins for a voltage lower than the unterminated
voltage.
• A UFP advertises Rd on both its CC pins (CC1 and CC2).
• A powered cable advertises Ra on only one of CC pins of the plug. Ra is used to inform the source to apply
VCONN.
• An analog audio device advertises Ra on both CC pins of the plug, which identifies it as an analog audio
device. VCONN is not applied on either CC pin in this case.
UFP monitors for
connection
DFP monitors for
connection
Cable
CC
Rp
Rp
Rds
Rds
Ra
Ra
DFP monitors for
connection
UFP monitors for
connection
图10-27. DFP-UFP Connection
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10.3.16.3 Configuration Channel Pins CC1 and CC2
The TPS2583xA-Q1 has two pins, CC1 and CC2 that serve to detect an attachment to the port and resolve
cable orientation. These pins are also used to establish current broadcast to a valid UFP and configure VCONN.
表10-7 lists TPS2583xA-Q1 response to various attachments to its port.
表10-7. TPS2583xA-Q1 Response
TPS2583xA-Q1 RESPONSE(1)
TPS2583xA-Q1 TYPE C
CC1
CC2
BUCK
REGULATOR
VCONN
PORT
LS_GD
POL
LD_DET
On CC1 or CC2(2)
Nothing Attached
UFP Connected
UFP Connected
OPEN
Rd
OPEN
OPEN
Rd
OFF
ON
OFF
ON
NO
NO
NO
Hi-Z
Hi-Z
Hi-Z
LOW
LOW
OPEN
ON
ON
LOW
Powered Cable/No UFP
Connected
OPEN
Ra
Ra
OPEN
Ra
OFF
OFF
ON
OFF
OFF
ON
NO
NO
Hi-Z
Hi-Z
Hi-Z
LOW
Hi-Z
Hi-Z
Hi-Z
Hi-Z
LOW
LOW
Hi-Z
Hi-Z
Powered Cable/No UFP
Connected
Powered Cable/UFP
Connected
Rd
CC2
CC1
NO
Powered Cable/UFP
Connected
Ra
Rd
ON
ON
Debug Accessory
Connected(3)
Rd
Rd
OFF
OFF
OFF
OFF
Audio Adapter Accessory
Connected(3)
Ra
Ra
NO
(1) POL and LD_DET are open drain outputs; pull high with 100 kΩ to VCC when used. Tie to GND or leave open when not used.
(2) To supply VCONN a 5 V external LDO with at least 500-mA output current should be connected to the VCC pin.
(3) The TPS2583xA-Q1 don't support debug mode or audio mode.
10.3.16.4 Current Capability Advertisement and VCONN Overload Protection
The TPS2583xA-Q1 supports all three Type-C current advertisements as defined by the USB Type C standard.
Current broadcast to a connected UFP is controlled by the CTRL1 and CTRL2 pins. For each broadcast level the
device protects itself from a UFP that draws current in excess of the port’s USB Type-C Current advertisement
by setting the current limit as shown in 表10-8.
表10-8. USB Type-C® Current Advertisement
CC CAPABILITY
BROADCAST
SUPPORT USB 2.0
COMMUNICATION
CURRENT LIMIT
(typ)
DEVICE
CTRL1
CTRL2
MODE
0
0
0
1
1.5 A
1.5 A
YES: DP_IN to
DP_OUT and DM_IN
to DM_OUT
Client mode
VBUS power is off
YES: DP_IN to
DP_OUT and DM_IN
to DM_OUT
'83xA-Q1
1
1
0
1
1.5 A
3 A
SDP
CDP
BY RSNS, RSET
RILIMIT
,
YES: DP_IN to
DP_OUT and DM_IN
to DM_OUT
Under overload conditions, a precision current-limit circuit limits the VCONN output current. When a VCONN
overload condition is present, the TPS2583xA-Q1 maintains a constant output current, with the output voltage
determined by (iOS_CCn x RLOAD). VCONN functionality is supported only with an external 5-V supply connected
to VCC. Failure to connect an external supply may cause TPS2583xA-Q1 Vcc reset. The device turns off when
the junction temperature exceeds the thermal shutdown threshold, TSD, and remains off until the junction
temperature cools approximately 20°C and then restarts. The TPS2583xA-Q1 current limit profile is shown in 图
10-28.
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VCC
Slope = -rDS-ON
VCONN
0 V
0 A
ICCn
IOS_CCn
图10-28. VCONN Current Limit Profile
10.3.16.5 Plug Polarity Detection
Reversible Type-C plug orientation is reported by the POL pin when a UFP is connected. However when no UFP
is attached, POL remains de-asserted irrespective of cable plug orientation. 表 10-9 describes the POL state
based on which device CC pin detects VRD from an attached UFP pull-down.
表10-9. Plug Polarity Detection
CC1
Rd
CC2
Open
Rd
POL
STATE
Hi-Z
UFP connected
Open
Asserted (pulled low)
UFP connected with reverse plug orientation
图 10-29 shows an example implementation that uses the POL terminal to control the SEL terminal on the
HD3SS3212. The HD3SS3212 provides switching on the differential channels between Port B and Port C to Port
A depending on cable orientation.
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LDO
USB Host
5.05 ~ 6V (cable compensated)
IN
3.3V
OUT
GND
12V
RSNS
BOOT
SW
IN
RSET
CSP
CSN/
OUT
EN/UVLO
RT/SYNC
LS_GD
TPS2583xA-Q1
VCC
BUS
CC1
CC2
/FAULT_IN
/EN
/FAULT
/LD_DET
/POL
DM_IN
DP_IN
DM
DP
DM_OUT
DP_OUT
USB 3.0 MUX
SSRXp2
B0+
B0-
OEn
SSRXn2
SSRXp1
SEL
C0+
C0-
V
CC
SSRXn1
SSTXp2
SSTXp
SSTXn
SSRXp
A0+
A0-
A1+
A1-
B1+
B1-
C1+
C1-
SSTXn2
SSTXp1
SSRXn
SSTXn1
GND
图10-29. Example Implementation
10.3.17 Device Power Pins (IN, CSN/OUT, and PGND)
The IN pins are the input power path to the TPS2583xA-Q1 devices. The internal LDO and buck regulator high
side switch are supplied from the IN pins. The CSN/OUT pin connects to the negative terminal of the current
sense amplifier and the internal voltage feedback network. This pin must be connected to the output LC filter for
proper operation. PGND is the power ground return. For optimum performance, ensure the IN pin is properly
bypassed to PGND with adequate bulk and high-frequency bypass capacitance located as close to these pins as
possible.
10.3.18 Thermal Shutdown
The device has an internal overtemperature shutdown threshold, TSD, to protect the device from damage and
overall safety of the system. When device temperature exceeds TSD, the LD_GD pin is pulled low, and the buck
regulator stops switching. The device attempts to power-up when die temperature decreases by approximately
20°C.
10.3.19 Power Wake
Legacy Type-A ports source 5 V on VBUS regardless of a load connection or not. In contrast, Type-C ports are
"cold," 0 V, until a UFP connection has been detected with the CC lines. This fundamental change in VBUS
operation enables a Type-C port to save power when no load is connected. The TPS2583xA-Q1 devices monitor
the CC lines for a UFP connection and enable the internal buck regulator to source VBUS after a UFP is
detected. As a result idle port power consumption is reduced compared to Type-A port systems where the buck
regulator operates continuously to supply VBUS, even when no load is connected.
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10.4 Device Functional Modes
10.4.1 Shutdown Mode
The EN pin provides electrical ON and OFF control for the TPS2583xA. When VEN is below 1.2 V (typical), the
device is in shutdown mode. The TPS2583xA-Q1 also employs VIN and VCC undervoltage lock out protection. If
VIN or VCC voltage is below their respective UVLO level, the regulator will be turned off.
10.4.2 Standby Mode
If the EN pin is pulled above the EN threshold, and there is no active connection on the CC lines, TPS2583xA-
Q1 remains in a low-power state with the buck converter off until a valid UFP (sink) is detected with a valid RD on
either CC1 or CC2. This mode ensures the Type-C 0-V VBUS requirement is met and saves system power when
no device is connected.
10.4.3 Active Mode
The TPS2583xA-Q1 is in Active Mode when VEN is above the precision enable threshold, VIN and VCC are above
their respective UVLO levels and a valid detection has been made on the CC lines. The simplest way to enable
the TPS2583xA-Q1 is to connect the EN pin to VIN pin. This allows self startup when the input voltage is in the
operating range: 3.8 V to 36 V and a UFP detection is made. Refer to VCC, VCC_UVLO and Enable/UVLO and
Start-up for details on setting these operating levels.
In Active Mode, the TPS2583xA-Q1 buck regulator operates with forced pulse width modulation (FPWM), also
referred to as forced continuous conduction mode (FCCM). This ensures the buck regulator switching frequency
remains constant under all load conditions. FPWM operation provides low output voltage ripple, tight output
voltage regulation, and constant switching frequency. Built-in spread-spectrum modulation aids in distributing
spectral energy across a narrow band around the switching frequency programmed by the RT/SYNC pin. Under
light load conditions the inductor current is allowed to go negative. A negative current limit of IL_NEG is imposed
to prevent damage to the regulator's low side FET. During operation the TPS2583xA-Q1 will synchronize to any
valid clock signal on the RT/SYNC input.
10.4.4 Device Truth Table (TT)
The device truth table (表 10-10) lists all valid combinations for the two control pins (CTRL1 and CTRL2). The
TPS2583xA-Q1 devices monitor the CTRL inputs and transitions to whichever charging mode is commanded.
The data line switches are NOT OFF during mode changes once Rd asserts. VBUS voltage is depending on
new mode the device transitions to. If the device change from CDP mode to Client mode, the VBUS will be
turned OFF; If the device change from CDP mode to SDP mode, the VBUS will be always on during mode
transition.
表10-10. Truth Table
CURRENT LIMIT
DEVICE
CTRL1
CTRL2
USB MODES
BUCK REGULATOR
LS_GD
SETTING
0
0
1
1
0
1
0
1
VBUS is off
Client mode
OFF
OFF
TPS25830xA-Q1
Type-C (1.5 A) + SDP Mode
Type-C (3 A) + CDP Mode
ON
ON
ON
ON
See Current Limit
Setting using RILIMIT
10.4.5 USB Port Operating Modes
10.4.5.1 USB Type-C® Mode
The TPS2583xA-Q1 is a Type-C controller that supports all Type-C functions in a downstream facing port. It is
also used to manage current advertisement and protection to a connected UFP and active cable. When VIN
exceeds the undervoltage lockout threshold, the device samples the EN pin. A high level on this pin enables the
device and normal operation begins. Having successfully completed its start-up sequence, the device now
actively monitors its CC1 and CC2 pins for attachment to a UFP. When a UFP is detected on either the CC1 or
CC2 pin the buck regulator turn-ons after the required de-bounce time is met. If connected, the LS_GD pin
sources current into the external MOSFET allowing current to flow from CSN/OUT to BUS. If Ra is detected on
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the other CC pin (not connected to UFP), VCONN is applied to allow current to flow from VCC to the CC pin
connected to Ra. For a complete listing of various device operational modes refer to 表10-7.
The TPS2583xA-Q1 always starts in Type-C mode, then transitions to Client, CDP, or SDP as determined by the
CTRL1 and CTRL2 pins and signaling by the connected portable device on the DP_IN and DM_IN pins.
10.4.5.2 Standard Downstream Port (SDP) Mode —USB 2.0, USB 3.0, and USB 3.1
A SDP is a traditional USB port that follows USB 2.0, USB 3.0 or USB 3.1 protocol. A USB 2.0 SDP supplies a
minimum of 500 mA per port and supports USB 2.0 communications. A USB 3.x SDP supplies a minimum of 900
mA per port and supports USB 3.0 or USB 3.1 communications. For both types, the host controller must be
active to allow charging.
10.4.5.3 Charging Downstream Port (CDP) Mode
A CDP is a USB port that follows USB BC1.2 and supplies a minimum of 1.5 A per port. A CDP provides power
and meets the USB 2.0 requirements for device enumeration. USB-2.0 communication is supported, and the
host controller must be active to allow charging. The difference between CDP and SDP is the host-charge
handshaking logic that identifies this port as a CDP. A CDP is identifiable by a compliant BC1.2 client device and
allows for additional current draw by the client device.
The CDP handshaking process occurs in two steps. During step one, the portable equipment outputs a nominal
0.6-V output on the DP line and reads the voltage input on the DM line. The portable device detects the
connection to an SDP if the voltage is less than the nominal data-detect voltage of 0.3 V. The portable device
detects the connection to a CDP if the DM voltage is greater than the nominal data detect voltage of 0.3 V and
optionally less than 0.8 V.
The second step is necessary for portable equipment to determine whether the equipment is connected to a
CDP or a DCP. The portable device outputs a nominal 0.6-V output on the DM line and reads the voltage input
on the DP line. The portable device concludes the equipment is connected to a CDP if the data line being read
remains less than the nominal data detects voltage of 0.3 V. The portable device concludes it is connected to a
DCP if the data line being read is greater than the nominal data detect voltage of 0.3 V.
10.4.5.4 Client Mode
The TPS2583xA-Q1 device integrates client mode as shown in 图 10-30. Both the buck converter and the
external MOSFET power switch are OFF and only the data analog switch is ON. This mode can be used by
automotive USB system manufacturers and OEMs for factory-only software programming via the USB port.
OFF
RSNS
BOOT
IN
SW
Buck Regulator
LS_GD
NFET
OFF
LOW
OFF
ON
RSET
CSP
CSN/OUT
USB Switches
LS_GD
TPS2583xA-Q1
LOW
BUS
DM_IN
DP_IN
SW
SW
DM_OUT
DP_OUT
CC1
CC2
图10-30. Client-Mode Equivalent Circuit
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If the TPS2583xA-Q1 configured in Client mode during start up, the data line switches are always on regardless
the voltage on VBUS and DP/DM pin.
VIN/EN
Rd assert here
CC1/CC2
VBUS
OFF
OFF
LS_GD
DP/DM
Date Switch
ON
deglitch time
150ms (typ)
LD_DET
图10-31. TPS2583xA-Q1 Startup Behavior Under Client Mode
10.4.6 High-Bandwidth Data-Line Switches
The TPS2583xA-Q1 device passes the DP and DM data lines through the device to enable monitoring and
handshaking while supporting the charging operation. A wide-bandwidth signal switch allows data to pass
through the device without corrupting signal integrity. The data-line switches are turned on in any of the CDP,
SDP or client modes. Under client mode, once the EN/UVLO input is at logic high, the data line switches are turn
on. Under CDP/SDP mode, the data line switches are only turn on after Rd assert.
For more detailed USB2.0 data line consideration and eye diagram test report, please refer to the How to
Improve USB2.0 Eye Diagram Using Long USB Cable application report.
备注
• While in CDP mode, the data switches are ON, even during CDP handshaking.
• The data line switches are OFF if EN/UVLO is low.
• The data line switches are OFF if OVP is detected on data line.
• The data switches are only for a USB-2.0 differential pair. In the case of a USB-3.0 or 3.1 host, the
super-speed differential pairs must be routed directly to the USB connector without passing
through the TPS2583xA-Q1 device.
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11 Application and Implementation
备注
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
11.1 Application Information
The TPS2583xA-Q1 is a step down DC-to-DC regulator and USB charge port controller. The dvice is typically
used in automotive systems to convert a DC voltage from the vehicle battery to 5-V DC with a maximum output
current of 3.5 A. The following design procedure can be used to select components for the TPS2583xA-Q1.
11.2 Typical Application
The TPS2583xA-Q1 only requires a few external components to convert from a wide voltage range supply to a
5-V output for powering USB devices. 图11-1 shows a basic schematic.
CBOOT
CSNS
0.1 ꢁF
0.1 ꢁF
VIN
6 V to 18 V
BOOT (32)
L
RSNS
IN (1, 2, 3)
RENT
SW (28, 29, 30, 31)
8.2 uH
RSET
20 kꢀ
CCSP
0.015 ꢀ
CIN(HF)
CIN(BULK)
CIN
5*22 ꢁF
+
EN/UVLO (4)
CSP (14)
RENB
300 ꢀ
10 ꢁF
0.1 ꢁF
5 kꢀ
CSN/OUT (13)
LS_GD (10)
CCSN/OUT
0.22 ꢁF
0.22 ꢁF 0.22 ꢁF
0.1 ꢁF
VCC (21)
CVCC
CVCC(HF)
100 ꢀ
BUS (15)
CC1 (20)
CC2 (19)
2.2 ꢁF
0.1 ꢁF
RPU
CTRL1 (5)
CTRL2 (6)
RPU
100 kꢀ
DM_IN (17)
DP_IN (18)
RPU
100 kꢀ
FAULT (24)
RPU
100 kꢀ
LD_DET (23)
RT/SYNC (9)
IMON (11)
100 kꢀ
RPU
RPU
POL (22)
RIMON
1 ꢁF
CBUS
100 kꢀ
ILIMIT (12)
12.7 kꢀ
THERM_WARN (7)
100 nF
11.8 kꢀ
RRT
RILIMIT
NTC
100 kꢀ
AGND (16)
NTC (8)
11.8 kꢀ
49.9 kꢀ
PGND (25, 26, 27)
图11-1. Application Circuit
The integrated buck regulator of TPS2583xA-Q1 is internally compensated and optimized for a reasonable
selection of external inductance and capacitance. The external components have to fulfill the needs of the
application, but also the stability criteria of the device's control loop. 表 11-2 can be used to simplify the output
filter component selection.
11.2.1 Design Requirements
To begin the design process, a few parameters must be known:
• Cable compensation: total resistance including cable resistance, contact resistance of connectors,
TPS2583xA-Q1 current sense resistor and external NFET rDS(on) (if used). Refer to 图10-24 for examples of
resistances in an automotive application.
• The maximum continuous output current for the charging port. The minimum current-limit setting of
TPS2583xA-Q1 device must be higher than this current.
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For this example, use the parameters listed in 表11-1 as the input parameters.
表11-1. Design Example Parameters
PARAMETER
VALUE
Input Voltage, VIN
Output Voltage, VOUT
13.5-V typical, range from 6 V to 18 V
5.1 V
3.0 A
Maximum Output Current IOUT(MAX)
Transient Response 0.3 A to 3 A
Output Voltage Ripple
5%
50 mV
400 mV
400 kHz
300 mΩ
3.3 A
Input Voltage Ripple
Switching Frequency fSW
Cable Resistance for Cable Compensation
Current Limit by Buck Average
表11-2. L and COUT Typical Values
VOUT WITHOUT
CABLE
COMPENSATION
CURRENT
LIMIT
fSW
CIN + CHF
L
CCSP
CCSN/OUT
CBUS
400 kHz
400 kHz
2100 kHz
5.10 V
5.10 V
5.10 V
1 × 10 µF + 1 × 100 nF
1 × 10 µF + 1 × 100 nF
1 × 10 µF + 1 × 100 nF
8.2 µH
8.2 µH
3.3 µH
Buck Avg
Ext. NFET
Buck Avg
5 × 22 µF
5 × 22 µF
2 × 22 µF
100 nF
100 nF
100 nF
1 to 4.7 µF
1 to 4.7 µF
1 to 4.7 µF
1. Inductance value is calculated based on VIN = 18 V.
2. All the COUT values are after de-rating.
11.2.2 Detailed Design Procedure
11.2.2.1 Output Voltage
The output voltage of TPS2583xA-Q1 is internally fixed at 5.10 V. Cable compensation can be used to increase
the voltage on the CSN/OUT pin linearly with increasing load current. Refer to the Cable Compensation section
for more details on output voltage variation versus load current. If cable compensation is not desired, use a 0-Ω
RIMON resistor.
11.2.2.2 Switching Frequency
The recommended switching frequency of the TPS2583xA-Q1 is in the range of 300 to 400 kHz for best
efficiency. Choose RRT = 49.9 kΩ for 400-kHz operation. Refer to 表 10-1 to choose a different switching
frequency.
11.2.2.3 Inductor Selection
The most critical parameters for the inductor are the inductance, saturation current and the rated current. The
inductance is based on the desired peak-to-peak ripple current ΔiL. Since the ripple current increases with the
input voltage, the maximum input voltage is always used to calculate the minimum inductance LMIN. Use
Equation 10 to calculate the minimum value of the output inductor. KIND is a coefficient that represents the
amount of inductor ripple current relative to the maximum output current of the device. A reasonable value of
KIND should be 20% to 40%. During an instantaneous short or overcurrent operation event, the RMS and peak
inductor current can be high. The inductor current rating should be higher than the current limit of the device.
VOUT ì V
- VOUT
(
)
IN_MAX
DiL =
VIN_MAX ìL ì fSW
(9)
V
- VOUT
VOUT
IN_MAX
LMIN
=
ì
IOUT ìKIND
V
IN_MAX ì fSW
(10)
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In general, it is preferable to choose lower inductance in switching power supplies, because it usually
corresponds to faster transient response, smaller DCR, and reduced size for more compact designs. But too low
of an inductance can generate too large of an inductor current ripple such that overcurrent protection at the full
load could be falsely triggered. Larger inductor current ripple also implies larger output voltage ripple with same
output capacitors. With peak current mode control, it is not recommended to have too small of an inductor
current ripple. A larger peak current ripple improves the comparator signal to noise ratio.
For this design example, choose KIND = 0.3, the minimum inductor value is calculated to be 8.7 µH. Choose the
nearest standard 8.2-μH ferrite inductor with a capability of 5-A RMS current and 8-A saturation current.
11.2.2.4 Output Capacitor Selection
The value of the output capacitor, and its ESR, determine the output voltage ripple and load transient
performance. The output capacitor bank is usually limited by the load transient requirements, rather than the
output voltage ripple. Equation 11 can be used to estimate a lower bound on the total output capacitance, and an
upper bound on the ESR, required to meet a specified load transient.
K2
12
»
…
…
ÿ
DIOUT
fSW ∂ DVOUT ∂K
COUT
í
∂
(
1- D
)
∂
(
1+ K
)
+
∂
(
2 - D
)
Ÿ
Ÿ
⁄
(
2 + K
)
∂ DVOUT
ESR Ç
K2
1
»
ÿ
≈
’
2∂ DIOUT 1+ K +
∂∆1+
÷
÷
…
Ÿ
∆
12
(1- D)
…
«
◊Ÿ
⁄
VOUT
D =
V
IN
(11)
where
• ΔVOUT = output voltage transient
• ΔIOUT = output current transient
• K = Ripple factor from Inductor Selection
Once the output capacitor and ESR have been calculated, Equation 12 can be used to check the peak-to-peak
output voltage ripple; Vr.
1
Vr @ DIL ∂ ESR2 +
2
8∂ fSW ∂COUT
(12)
The output capacitor and ESR can then be adjusted to meet both the load transient and output ripple
requirements.
For this example we require a ΔVOUT of ≤ 250 mV for an output current step of ΔIOUT = 2.7 A. Equation 11
gives a minimum value of 86 µF and a maximum ESR of 0.08 Ω. Assuming a 20% tolerance and a 10% bias de-
rating, we arrive at a minimum capacitance of 110 µF. This can be achieved with a bank of 5 × 22-µF, 10-V,
ceramic capacitors in the 1210 case size. More output capacitance can be used to improve the load transient
response. Ceramic capacitors can easily meet the minimum ESR requirements. In some cases an aluminum
electrolytic capacitor can be placed in parallel with the ceramics to help build up the required value of
capacitance.
In practice the output capacitor has the most influence on the transient response and loop phase margin. Load
transient testing and Bode plots are the best way to validate any given design and should always be completed
before the application goes into production. In addition to the required output capacitance, a small ceramic
placed on the output can help to reduce high frequency noise. Small case size ceramic capacitors in the range
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of 1 nF to 100 nF can be very helpful in reducing voltage spikes on the output caused by inductor and board
parasitics.
The maximum value of total output capacitance should be limited to about 10 times the design value, or 1000 µF,
whichever is smaller. Large values of output capacitance can adversely affect the start-up behavior of the
regulator as well as the loop stability. If values larger than noted here must be used, then a careful study of start-
up at full load and loop stability must be performed.
11.2.2.5 Input Capacitor Selection
The TPS2583xA-Q1 device requires high frequency input decoupling capacitor(s) and a bulk input capacitor,
depending on the application. A high-quality ceramic capacitor type X5R or X7R with sufficient voltage ratings
are recommended. To compensate the derating of ceramic capacitors, a voltage rating of twice the maximum
input voltage is recommended. The bulk capacitance selection depends upon a number of factors: long leads
from the automotive battery to the IN pin of TPS2583xA-Q1, cold or warm engine crank requirements, etc. The
bulk capacitor is used to dampen voltage spike due to the lead inductance of the cable or the trace. For this
design, one 10 μF, 50 V, X7R ceramic capacitors are used. A 0.1 μF for high-frequency filtering and place it as
close as possible to the device pins. Consider adding additional bulk capacitance for operation through low VIN
warm-crank profiles is required by the vehicle OEM.
11.2.2.6 Bootstrap Capacitor Selection
Every TPS2583xA-Q1 design requires a bootstrap capacitor (CBOOT). The recommended capacitor is 0.1 μF
and rated 10 V or higher. The bootstrap capacitor is located between the SW pin and the BOOT pin. The
bootstrap capacitor must be a high-quality ceramic type with an X7R or X5R grade dielectric for temperature
stability.
11.2.2.7 VCC Capacitor Selection
The VCC pin is the output of an internal LDO for TPS2583x. The LDO supplies gate charge to the LS buck
switch and is the supply to the digital state-machine and analog USB circuitry. To insure stability of the device,
place a minimum of 2.2 μF, 10 V, X7R capacitor from this pin to ground. In addition a 0.1-μF high frequency
decoupling capacitor is highly recommended.
11.2.2.8 Enable and Undervoltage Lockout Set-Point
The system enable and undervoltage lockout (UVLO) is adjusted using the external voltage divider network of
RENT and RENB. The EN/UVLO has two thresholds, one for power up when the input voltage is rising and one
for power down or brown outs when the input voltage is falling. The following equations can be used to
determine the VIN(ON) and VIN(OFF) levels.
(13)
(14)
VIN(ON) = 6 V (user choice)
RENB = 5 kΩ(user choice)
RENT = [(VIN(ON) / VEN/UVLO_H) –1] × RENB
RENT = [(6 V / 1.2 V) –1] × 5 kΩ= 20 kΩ. Choose standard 20 kΩ.
Therefore VIN(OFF) = 6 V × [1 - (0.09 V / 1.2 V)] = 5.55 V
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11.2.2.9 Current Limit Set-Point
The TPS2583xA-Q1 can provide an accurate current limit to protect the USB port from overload based upon the
values of RSNS, RSET and RILIMIT. The design process is the same regardless of whether buck average current
limiting or external NFET current limiting is chosen. The only difference is the current limit threshold voltage on
the ILIMIT pin.
• RSNS is the current sense resistor. The recommended voltage across the RSNS undercurrent limit should be
approximately 50 mV as a compromise between accuracy and power dissipation. For example, if current
limiting is desired for IOUT(MAX) ≥3.3 A, then RSNS = 0.05 V / 3.3 A = 0.01515 Ω. Choose a standard value of
15 mΩ.
• RSET determines the input current to the transconductance amplifier and current mirror. The amplifier
balances the voltage to be equal to that across RSNS. Choose a RSET value to produce an ISET current
between 75 - 180 µA at the desired IOUT(MAX). Considering 50 mV across RSET, a value of 300 Ωwill provide
approximately 166 µA of ISET current to the amplifier and mirror circuit. Care should be taken to limit the ISET
current below 200 µA to avoid saturating the internal amplifier circuit.
• Buck average current limiting occurs when VILIMIT = 1 V. RILIMIT is calculated as 1 V × 300 Ω/ [ 0.5 × (3.3 A ×
15 mΩ+ 0.7 mV) ] = 11.95 kΩ. A standard 11.8-kΩvalue is chosen.
11.2.2.10 Cable Compensation Set-Point
From 表11-1 the total cable resistance to be accounted for is 300 mΩ.
1. From Current Limit Set-Point RSNS and RSET have been determined as 15 mΩand 300 Ω, respectively.
2. RWIRE = 300 mΩ
3. ΔVOUT = (RSNS + RWIRE) × IBUS = (0.015 + 0.3) × 3 = 1.0395 V
4. RIMON = (ΔVOUT × RSET × 2) / (IBUS × RSNS) = (1.0395 × 300 × 2) / (3.3 × 0.015) = 12.6 kΩ. A standard
value of 12.7 kΩis selected.
11.2.2.11 LD_DET, POL, and FAULT Resistor Selection
The LD_DET, POL, and FAULT pins are open-drain output flags. They can be connected to the TPS2583xA-Q1
VCC pin with 100-kΩ resistors, or connected to another suitable I/O voltage supply if actively monitored by a
USB HUB or MCU. They can be left floating if unused.
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11.2.3 Application Curves
Unless otherwise specified the following conditions apply: VIN = 13.5 V, fSW = 400 kHz, L = 8.2 µH, COUT_CSP = 66 µF,
COUT_CSN = 0.1 µF, CBUS = 1 µF, TA = 25 °C.
100
90
80
70
60
50
40
VIN = 8.5V
VIN = 13.5V
VIN = 18V
30
20
0.1
1
OUT Current (A)
4
A002
VOUT = 5.1 V
fSW = 2100 kHz
L = 3.3 uH
VOUT = 5.1 V
fSW = 400 kHz
图11-3. Buck Only Efficiency
图11-2. Buck Only Efficiency
100
95
90
85
80
75
70
65
60
100
90
80
70
60
50
40
30
20
VIN = 6V
VIN = 13.5V
VIN = 18V
VIN = 36V
VIN = 8.5V
VIN = 13.5V
VIN = 18V
0.1
1
OUT Current (A)
4
0.1
1
OUT Current (A)
4
A003
A004
fSW = 400 kHz
fSW = 2100 kHz
L = 3.3uH
RSENS = 15 mΩ
RSENS = 15 mΩ
图11-4. Efficiency With Sense Resistor
图11-5. Efficiency With Sense Resistor
0.4
0.1
VIN = 6V
VIN = 13.5V
VIN = 18V
Load = 1A
Load = 2A
Load = 3A
0.08
0.06
0.3
0.2
0.1
0
0.04
0.02
0
-0.1
-0.2
-0.02
-0.04
0
0.5
1
1.5
OUT Current (A)
2
2.5
3
6
9
12
15
18
VIN Voltage (V)
21
24
27
30
33
36
A005
A006
VOUT = 5.1 V
fSW = 400 kHz
VOUT = 5.1 V
fSW = 400 kHz
图11-6. Load Regulation
图11-7. Line Regulation
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VBUS,
200mV/Div
VBUS,
200mV/Div
Load Current,
2A/Div
Load Current,
2A/Div
200us/Div
200us/Div
ILOAD = 0 A to 3.5 A
ILOAD = 0.75 A to 2.25 A
RIMON = 0 Ω
RIMON = 0 Ω
图11-8. Load Transient Without Cable
图11-9. Load Transient Without Cable
Compensation
Compensation
VBUS,
500mV/Div
VBUS,
500mV/Div
Load Current,
2A/Div
Load Current,
2A/Div
2ms/Div
2ms/Div
ILOAD = 0 A to 3.5 A
ILOAD = 0.75 A to 2.25 A
RIMON = 13 kΩ
RIMON = 13 kΩ
图11-10. Load Transient with Cable Compensation 图11-11. Load Transient with Cable Compensation
6
SW,
5V/Div
5.5
5
4.5
4
3.5
3
VBUS,
10mV/Div (AC coupled)
Load = 0A
Load = 1A
Load = 2A
Load = 3A
Load = 3.5A
4
4.5
5
5.5 6
Input Voltage (V)
6.5
7
7.5
2us/Div
A007
RIMON = 13 kΩ
图11-12. Dropout Characteristic
图11-13. 3.5-A Output Ripple
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SW,
5V/Div
SW,
5V/Div
VBUS,
10mV/Div (AC coupled)
VBUS,
10mV/Div (AC coupled)
2us/Div
2us/Div
RIMON = 13 kΩ
RIMON = 13 kΩ
图11-14. 100-mA Output Ripple
图11-15. No Load Output Ripple
EN,
5V/Div
EN,
5V/Div
VIN
5V/Div
VIN
5V/Div
VBUS,
5V/Div
VBUS,
5V/Div
VCC,
5V/Div
VCC,
5V/Div
40ms/Div
10ms/Div
VIN = 0 V to 13.5 V
CC1 = Rd
ILOAD = 3 A
VIN = 13.5 V to 0 V
CC1 = Rd
ILOAD = 3 A
图11-16. Startup Relate to VIN
图11-17. Shutdown Relate to VIN
EN, 5V/Div
EN,
5V/Div
VIN
5V/Div
VIN, 5V/Div
VBUS, 2V/Div
VBUS,
2V/Div
VCC, 2V/Div
VCC,
5V/Div
40ms/Div
40ms/Div
EN = 0 V to 5 V
CC1 = Rd
ILOAD = 3 A
EN = 5 V to 0 V
CC1 = Rd
ILOAD = 3 A
图11-18. Startup Relate to EN
图11-19. Shutdown Relate to EN
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VIN, 10V/Div
VIN, 10V/Div
VBUS, 2V/Div
Rd assert
Rd desert
VBUS, 2V/Div
CC1, 2V/Div
CC2, 2V/Div
CC1, 2V/Div
CC2, 2V/Div
40ms/Div
20ms/Div
CC1 = Open to Rd
CC2 = Open
ILOAD = 3 A
CC1 = Rd to Open
CC2 = Open
ILOAD = 3 A
图11-20. Rd Assert
图11-21. Rd Desert
EN, 10V/Div
EN, 10V/Div
FAULT, 2V/Div
Short removed
FAULT, 2V/Div
VBUS, 2V/Div
VBUS, 2V/Div
Load Current,
5A/Div
Load Current, 5A/Div
100ms/Div
100ms/Div
H
EN to High
VBUS = GND
RLIMIT = 13 kΩ
RLIMIT = 13 kΩ
图11-22. Enable Into Short Without External FET
图11-23. Short Circuit Recovery Without External
FET
EN, 10V/Div
EN, 10V/Div
FAULT, 2V/Div
FAULT, 2V/Div
VBUS, 1V/Div
VBUS, 1V/Div
1Ω load removed
Load Current, 2A/Div
Load Current, 2A/Div
100ms/Div
100ms/Div
EN to High
VBUS = GND
RLIMIT = 13 kΩ
RLIMIT = 13 kΩ
图11-25. 1-ΩLoad Recovery Without External FET
图11-24. Enable Into 1-ΩLoad Without External
FET
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EN, 10V/Div
EN, 10V/Div
FAULT, 2V/Div
Short removed
FAULT, 2V/Div
VBUS, 2V/Div
VBUS, 2V/Div
Load Current, 2A/Div
Load Current, 2A/Div
100ms/Div
100ms/Div
EN to High
VBUS = GND
RLIMIT = 6.8 kΩ
RLIMIT = 6.8 kΩ
图11-26. Enable Into Short With External FET
图11-27. Short Circuit Recovery With External FET
EN, 10V/Div
EN, 10V/Div
FAULT, 2V/Div
FAULT, 2V/Div
1Ω load removed
VBUS, 1V/Div
Load Current, 2A/Div
VBUS, 1V/Div
Load Current, 2A/Div
100ms/Div
100ms/Div
RLIMIT = 6.8 kΩ
EN to High
VBUS = GND
RLIMIT = 6.8 kΩ
图11-28. Enable Into 1-ΩLoad With External FET
图11-29. 1-ΩLoad Recovery With External FET
VBUS, 2V/Div
VCSN, 2V/Div
VBUS, 2V/Div
VCSN, 2V/Div
Load Current,
2A/Div
Load Current,
2A/Div
1ms/Div
1ms/Div
ILOAD1 = 3 A
ILOAD2 = 4.8 A
ILOAD1 = 3 A
ILOAD2 = 4.8 A
RLIMIT = 13 kΩ
RLIMIT = 6.8 kΩ
图11-30. MFI Over-Current Test Without External
图11-31. MFI Over-Current Test With External FET
FET
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EN, 10V/Div
EN, 10V/Div
FAULT, 2V/Div
FAULT, 2V/Div
VBUS, 2V/Div
VBUS hot short to
GND
VBUS, 2V/Div
VBUS hot short to
GND
Load Current, 2A/Div
Load Current, 5A/Div
100ms/Div
100ms/Div
RLIMIT = 13 kΩ
RLIMIT = 6.8 kΩ
图11-32. VBUS Hot Short to GND Without External
图11-33. VBUS Hot Short to GND with External
FET
FET
FAULT, 5V/Div
FAULT, 2V/Div
CC2, 2V/Div
VBUS, 2V/Div
CC2 hot short to GND
VBUS short to 18V BAT
VBUS, 5V/Div
CC2 Current,
200mA/Div
2ms/Div
2ms/Div
CC1 = Rd
CC2 = Ra
CC1 = Rd
CC2 = OPEN
NO LOAD
图11-34. CC2 Hot Short to GND
图11-35. VBUS Short to BAT with External FET
FAULT, 2V/Div
FAULT, 2V/Div
VBUS, 5V/Div
CC short to 18V BAT
CC2, 5V/Div
20ms/Div
2ms/Div
CC1 = Rd
CC2 = OPEN
NO LOAD
CC1 = Rd
CC2 = OPEN
NO LOAD
图11-36. VBUS Short to BAT Recovery With
图11-37. CC Short to BAT
External FET
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FAULT, 2V/Div
FAULT, 2V/Div
CC2, 5V/Div
DP short to 18V BAT
DP, 5V/Div
2ms/Div
2ms/Div
CC1 = Rd
CC2 = OPEN
NO LOAD
CC1 = Rd
CC2 = OPEN
NO LOAD
图11-38. CC Short to BAT Recovery
图11-39. DP Short to BAT
FAULT, 2V/Div
VNTC, 2V/Div
VNTC > VWARN_HIGH
VBUS, 5V/Div
DP, 5V/Div
THERM_WARN, 5V/Div
CC1, 2V/Div
SW, 10V/Div
20ms/Div
100ms/Div
CC1 = Rd
CC2 = OPEN
NO LOAD
VNTC = 0 V to 3 V
CC1 = Rd
CC2 = OPEN
图11-40. DP Short to BAT Recovery
图11-41. Thermal Sensing with NTC Behavior 1
VIN, 10V/Div
VNTC, 2V/Div
VNTC > VSD_HIGH
THERM_WARN, 5V/Div
CTL1, 5V/Div
CTL2, 5V/Div
CC1, 2V/Div
SW, 10V/Div
VBUS, 5V/Div
100ms/Div
100ms/Div
VIN = 0 V to 13.5 V
CC1 = Rd
CTRL12 = 00
VNTC = 0 V to 4 V
CC1 = Rd
CC2 = OPEN
图11-43. Client mode Startup
图11-42. Thermal Sensing with NTC Behavior 2
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VIN, 10V/Div
CTL1, 5V/Div
CTL2, 5V/Div
VBUS, 5V/Div
100ms/Div
VIN13.5 V
CC1 = Rd
CTRL12 = 00 to 11
图11-44. Client Mode to CDP Mode
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12 Power Supply Recommendations
The TPS2583xA-Q1 is designed to operate from an input voltage supply range between 6 V and 36 V. This input
supply should be able to withstand the maximum input current and maintain a stable voltage. The resistance of
the input supply rail should be low enough that an input current transient does not cause a high enough drop at
the TPS2583xA-Q1 supply voltage that can cause a false UVLO fault triggering and system reset. If the input
supply is located more than a few inches from the TPS2583x, additional bulk capacitance may be required in
addition to the ceramic input capacitors. The amount of bulk capacitance is not critical, but a 47-μF or 100-μF
electrolytic capacitor is a typical choice.
13 Layout
13.1 Layout Guidelines
Layout is a critical portion of good power supply design. The following guidelines will help users design a PCB
with the best power conversion performance, thermal performance, and minimized generation of unwanted EMI.
For more detailed EMC design consideration and test report, please refer to the PCB Layout and Parameters
Recommendation for TPS2583X EMC Performance application report.
1. Input capacitor: The input bypass capacitor CIN must be placed as close as possible to the IN and PGND
pins. Grounding for both the input and output capacitors should consist of localized top side planes that
connect to the PGND pin and PAD. A combination of different values and packages of capacitors can help
improve the EMC performance (for example: 10 μF + 0.1 μF + 2.2 nF). Besides, the distance between the
input filter section and the output power section must be at least 15 mm to prevent the output high-frequency
signal from coupling into the input filter. A 10-uF cap cross VIN and PGND pin on top of SW is suggested for
TPS2583x-Q1.
2. VCC bypass capacitor: Place bypass capacitors for VCC close to the VCC pin and ground the bypass
capacitor to device ground.
3. Use a ground plane in one of the middle layers as noise shielding and heat dissipation path.
4. Connect the thermal pad to the ground plane. The QFN package has a thermal pad (PAD) connection that
must be soldered down to the PCB ground plane. This pad acts as a heat-sink connection. The integrity of
this solder connection has a direct bearing on the total effective RθJA of the application.
5. Make VIN, VOUT and ground bus connections as wide as possible. This reduces any voltage drops on the
input or output paths of the converter and maximizes efficiency.
6. Provide enough PCB area for proper heat sinking. As stated in the section, enough copper area must be
used to ensure a low RθJA, commensurate with the maximum load current and ambient temperature. Make
the top and bottom PCB layers with two-ounce copper; and no less than one ounce. Use an array of heat-
sinking vias to connect the thermal pad (PAD) to the ground plane on the bottom PCB layer. If the PCB
design uses multiple copper layers (recommended), thermal vias can also be connected to the inner layer
heat-spreading ground planes.
7. The SW pin connecting to the inductor should be as short as possible, and just wide enough to carry the
load current without excessive heating. Short, thick traces or copper pours (shapes) will bring a high current
conduction capacity to minimize parasitic resistance, but it will also cause a larger parasitic capacitance.
Thus a balance should be found between smaller parasitic resistance and larger parasitic capacitance. And
the current path should be kept straight forward to the inductor, otherwise the L-shaped or T-shaped path will
make a sudden change of the impedance which causes signal reflection and impacts the performance of
EMC. The output capacitors should be placed close to the VOUT end of the inductor and closely grounded to
PGND pin and exposed PAD. Besides, do not punch vias on SW lines. Using shielded inductors or molded
inductors to reduce high-frequency radiation.
8. Sense and Set Resistors: The RSNS and RSET resistors connect to the current sense amplifier inputs at the
CSP and CSN/OUT pins. For best current limit and cable compensation accuracy; short, parallel traces give
the best performance. If it is not possible to place RSNS and RSET near the CSP and CSN/OUT pins, it is
recommended that the traces from sense resistor be routed in parallel and of similar lengths. A small filter
capacitor in parallel with RSNS and a small filter capacitor from CSN/OUT to AGND help decouple noise.
9. RILIMIT and RIMON resistors should be placed as close as possible to the ILIMIT and IMON pins and
connected to AGND. If needed, these components can be placed on the bottom side of the PCB with signals
routed through small vias.
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10. Trace routing of DP_IN, DM_IN, DP_OUT, and DM_OUT: Route these traces as micro-strips with nominal
differential impedance of 90 Ω. Minimize the use of vias in the high-speed data lines. Keep the reference
GND plane devoid from cuts or splits above the differential pairs to prevent impedance discontinuities.
11. Keep the CC lines close to the same length. Do not create stubs or test points on the CC lines.
12. POL, LD_DET, FAULT and THERM_WARN (TPS25831-Q1) are open-drain outputs. They can be connected
to the VCC pin via pull-up resistors. Suggested resistor value is 100 kΩ.
13. The area enclosed by current loop of input side and output side should be as small as possible; the area
enclosed by the BOOT circuit should be as small as possible.
14. Power ground PGND and the signal ground AGND should be separated in the actual PCB layout.
13.2 Ground Plane and Thermal Considerations
It is recommended to use one of the middle layers as a solid ground plane. Ground plane provides shielding for
sensitive circuits and traces. It also provides a quiet reference potential for the control circuitry. The PGND pins
should be connected to the ground plane using vias right next to the bypass capacitors. PGND pin is connected
to the source of the internal LS switch. The PGND net contains noise at switching frequency and may bounce
due to load variations. PGND trace, as well as VIN and SW traces, should be constrained to one side of the
ground plane. The other side of the ground plane contains much less noise and should be used for sensitive
routes. AGND and PGND should be connected under the QFN package PAD.
It is recommended to provide adequate device heat sinking by utilizing the PAD of the IC as the primary thermal
path. Use a minimum 2 row, 2 column "+" array of 12 mil thermal vias to connect the PAD to the system ground
plane heat sink. The vias should be evenly distributed under the PAD. Use as much copper as possible, for
system ground plane, on the top and bottom layers for the best heat dissipation. Use a four-layer board with the
copper thickness for the four layers, starting from the top of, 2 oz / 1 oz / 1 oz / 2 oz. Four layer boards with
enough copper thickness provide low current conduction impedance, proper shielding and lower thermal
resistance.
The thermal characteristics of the TPS2583x-Q1 are specified using the parameter θJA, which characterize the
junction temperature of silicon to the ambient temperature in a specific system. Although the value of θJA is
dependent on many variables, it still can be used to approximate the operating junction temperature of the
device. To obtain an estimate of the device junction temperature, one may use the following relationship:
TJ = PD × θJA + TA
(15)
where
TJ = Junction temperature in °C
PD = VIN × IIN × (1 –Efficiency) –1.1 × IOUT 2 × DCR in Watt
DCR = Inductor DC parasitic resistance in Ω
θJA = Junction to ambient thermal resistance of the device in °C/W
TA = Ambient temperature in °C
θJA is highly related to PCB size and layout, as well as environmental factors such as heat sinking and air flow.
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13.3 Layout Example
EMI Filter
VIN
CHF
CIN
PGND
A4
9
8
7
6
5
4
3
2
1
A1
USB Connector
RT
BT
32
31
30
LS_GD 10
IMON 11
SW
ILIM 12
CSN/OUT 13
CSP 14
29
28
27
BUS 15
26 PGND
CFILT
AGND 16
A3
25
A2
17
18
19
20
21
22
23
24
RSET
CFILT
COUT
CFILT
CFILT
COUT
RSNS
RBUS
COUT
Top Trace/Plane
Inner GND Plane
Top
Inner GND Plane
Signal Layers
VIA to Signal Layer
VIA to GND Planes
VIA to Strap
Power and GND
图13-1. Layout
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14 Device and Documentation Support
14.1 Documentation Support
14.1.1 Related Documentation
• Texas Instruments, TPS2583x-Q1 and TPS2584x-Q1 Short-to-Battery Application application report
• Texas Instruments, How to Improve USB2.0 Eye Diagram Using Long USB Cable application report
• Texas Instruments, PCB Layout and Parameters Recommendation for TPS2583X EMC Performance
application report
14.2 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
表14-1. Related Links
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
PARTS
PRODUCT FOLDER
ORDER NOW
TPS25830A-Q1
TPS25832A-Q1
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
14.3 接收文档更新通知
要接收文档更新通知,请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册,即可每周接收产品信息更
改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
14.4 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
14.5 Trademarks
TI E2E™ is a trademark of Texas Instruments.
USB Type-C® is a registered trademark of USB Implementers Forum.
所有商标均为其各自所有者的财产。
14.6 静电放电警告
静电放电(ESD) 会损坏这个集成电路。德州仪器(TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理
和安装程序,可能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级,大至整个器件故障。精密的集成电路可能更容易受到损坏,这是因为非常细微的参
数更改都可能会导致器件与其发布的规格不相符。
14.7 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
15 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
31-Mar-2022
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS25830AQCWRHBRQ1
TPS25830AQWRHBRQ1
TPS25832AQCWRHBRQ1
TPS25832AQWRHBRQ1
ACTIVE
ACTIVE
ACTIVE
ACTIVE
VQFN
VQFN
VQFN
VQFN
RHB
RHB
RHB
RHB
32
32
32
32
5000 RoHS & Green
3000 RoHS & Green
5000 RoHS & Green
3000 RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
-40 to 125
-40 to 125
-40 to 125
-40 to 125
T25830A
SN
NIPDAU
SN
T25830A
T25832A
T25832A
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
31-Mar-2022
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
13-Jul-2023
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TPS25830AQCWRHBRQ1 VQFN
TPS25830AQWRHBRQ1 VQFN
TPS25832AQCWRHBRQ1 VQFN
TPS25832AQWRHBRQ1 VQFN
RHB
RHB
RHB
RHB
32
32
32
32
5000
3000
5000
3000
330.0
330.0
330.0
330.0
12.4
12.4
12.4
12.4
5.3
5.25
5.3
5.3
5.25
5.3
1.1
1.1
1.1
1.1
8.0
8.0
8.0
8.0
12.0
12.0
12.0
12.0
Q2
Q2
Q2
Q2
5.25
5.25
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
13-Jul-2023
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TPS25830AQCWRHBRQ1
TPS25830AQWRHBRQ1
TPS25832AQCWRHBRQ1
TPS25832AQWRHBRQ1
VQFN
VQFN
VQFN
VQFN
RHB
RHB
RHB
RHB
32
32
32
32
5000
3000
5000
3000
367.0
367.0
367.0
367.0
367.0
367.0
367.0
367.0
35.0
38.0
35.0
38.0
Pack Materials-Page 2
GENERIC PACKAGE VIEW
RHB 32
5 x 5, 0.5 mm pitch
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
Images above are just a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4224745/A
www.ti.com
PACKAGE OUTLINE
RHB0032R
VQFN - 1 mm max height
S
C
A
L
E
2
.
5
0
0
PLASTIC QUAD FLATPACK - NO LEAD
5.1
4.9
B
A
0.5
0.3
0.3
0.2
PIN 1 INDEX AREA
DETAIL
OPTIONAL TERMINAL
TYPICAL
5.1
4.9
0.1 MIN
(0.05)
A
-
A
2
0
.
0
0
0
SECTION A-A
TYPICAL
C
1 MAX
SEATING PLANE
0.08 C
0.05
0.00
3.7 0.1
2X 3.5
8X (0.2)
(0.2) TYP
A2
9
16
A3
28X 0.5
8
17
8X (0.375)
A
A
2X
33
SYMM
3.5
EXPOSED
THERMAL PAD
SEE TERMINAL
DETAIL
1
24
A4
0.3
32X
A1
0.2
32
25
PIN 1 ID
(OPTIONAL)
0.1
C A B
SYMM
0.5
0.3
32X
0.05
4223771/A 06/2017
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
RHB0032R
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(
3.7)
(R0.05)
TYP
SYMM
8X (0.575)
32X (0.6)
32
25
8X (0.2)
A4
A1
32X (0.25)
1
24
4X
(0.97)
(
0.2) TYP
VIA
33
SYMM
4X
(4.8)
(1.26)
28X (0.5)
(2.225)
TYP
8
17
A2
A3
9
16
4X
(0.97)
4X (1.26)
(4.8)
(2.225) TYP
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:15X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
SOLDER MASK
OPENING
METAL
EXPOSED METAL
EXPOSED METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4223771/A 06/2017
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
RHB0032R
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(1.26 TYP)
9X ( 1.06)
32
8X (0.575)
8X (0.2)
32X (0.6)
25
32X (0.25)
33
1
24
(1.26)
TYP
(R0.05) TYP
SYMM
(4.8)
(2.225)
TYP
28X (0.5)
8
17
METAL
TYP
9
16
SYMM
(4.8)
(2.225) TYP
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD 33
74% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:18X
4223771/A 06/2017
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
PACKAGE OUTLINE
RHB0032AA
VQFN - 1 mm max height
S
C
A
L
E
3
.
0
0
0
PLASTIC QUAD FLATPACK - NO LEAD
5.1
4.9
B
A
PIN 1 INDEX AREA
5.1
4.9
0.07 MIN
(0.13)
SECTION A-A
A
TYPICAL
1.0
0.8
C
SEATING PLANE
0.08 C
0.05
0.00
3.7 0.1
2X 3.5
(0.2) TYP
9
16
EXPOSED
THERMAL PAD
28X 0.5
8
(0.16) TYP
17
2X
A
A
SYMM
33
3.5
0.3
0.2
32X
24
0.1
C A B
C
1
0.05
PIN 1 ID
32
25
SYMM
0.5
0.3
(0.25)
TYP
32X
4227186/A 10/2021
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
RHB0032AA
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
(
3.7)
SYMM
25
32
32X (0.6)
1
24
32X (0.25)
28X (0.5)
(0.97)
(0.63)
TYP
33
SYMM
(4.8)
(
0.2) TYP
VIA
8
17
(R0.05)
TYP
9
16
(0.63) TYP
(0.97)
(4.8)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:18X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
SOLDER MASK
OPENING
METAL EDGE
EXPOSED METAL
EXPOSED
METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4227186/A 10/2021
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
RHB0032AA
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
9X ( 1.06)
(1.26)
(R0.05) TYP
32
25
32X (0.6)
1
24
32X (0.25)
28X (0.5)
(1.26)
SYMM
33
(4.8)
METAL
TYP
17
8
(R0.05) TYP
16
9
SYMM
(4.8)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD 33:
74% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:20X
4227186/A 10/2021
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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