TPS2833 [TI]
FAST SYNCHRONOUS-BUCK MOSFET DRIVER WITH DEADTIME CONTROL; 快速同步降压MOSFET带死区控制驱动器
| 型号： | TPS2833 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | FAST SYNCHRONOUS-BUCK MOSFET DRIVER WITH DEADTIME CONTROL |
| 文件： | 总14页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPS2832, TPS2833
FAST SYNCHRONOUS-BUCK MOSFET DRIVER
WITH DEADTIME CONTROL
SLVS195B – JANUARY 1999 – REVISED SEPTEMBER 1999
D PACKAGE
(TOP VIEW)
Floating Bootstrap or Ground-Reference
High-Side Driver
IN
PGND
DT
BOOT
Active Deadtime Control
1
2
3
4
8
7
6
5
HIGHDR
BOOTLO
LOWDR
50-ns Max Rise/Fall Times and 100-ns Max
Propagation Delay — 3-nF Load
V
CC
Ideal for High-Current Single or Mutiphase
Applications
2.4-A Typ Peak Output Current
4.5-V to 15-V Supply Voltage Range
Internal Schottky Bootstrap Diode
Low Supply Current . . . 3–mA Typ
–40°C to 125°C Junction-Temperature
Operating Range
description
The TPS2832 and TPS2833 are MOSFET drivers for synchronous-buck power stages. These devices are ideal
for designing a high-performance power supply using a switching controller that does not include suitable
MOSFETdrivers on the chip. The drivers are designed to deliver 2.4-A peak currents into large capacitive loads.
Higher currents can be controlled by using multiple drivers in a multiphase configuration. The high-side driver
can be configured as a ground-reference driver or as a floating bootstrap driver. An adaptive dead-time control
circuiteliminatesshoot-throughcurrentsthroughthemainpowerFETsduringswitchingtransitionsandprovides
high efficiency for the buck regulator.
TheTPS2832hasanoninvertinginput. TheTPS2833hasaninvertinginput. TheTPS2832/33drivers, available
in 8-terminal SOIC packages, operate over a junction temperature range of –40°C to 125°C.
AVAILABLE OPTIONS
PACKAGED DEVICES
T
J
SOIC
(D)
TPS2832D
TPS2833D
–40°C to 125°C
The D package is available taped and reeled. Add R
suffix to device type (e.g., TPS2830DR)
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1999, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2832, TPS2833
FAST SYNCHRONOUS-BUCK MOSFET DRIVER
WITH DEADTIME CONTROL
SLVS195B – JANUARY 1999 – REVISED SEPTEMBER 1999
functional block diagram
4
8
V
CC
BOOT
7
6
(TPS2832 Only)
HIGHDR
BOOTLO
1
IN
V
CC
(TPS2833 Only)
5
2
LOWDR
PGND
3
DT
Terminal Functions
TERMINAL
NAME
BOOT
I/O
DESCRIPTION
NO.
8
I
Bootstrap terminal. A ceramic capacitor is connected between BOOT and BOOTLO terminals to develop
the floating bootstrap voltage for the high-side MOSFET. The capacitor value is typically between 0.1 µF
and 1 µF. A 1-MΩ resistor should be connected across the bootstrap capacitor to provide a discharge path
when the driver has been powered down.
BOOTLO
DT
6
3
7
1
5
2
4
O
I
This terminal connects to the junction of the high-side and low-side MOSFETs.
Deadtime control terminal. Connect DT to the junction of the high-side and low-side MOSFETs
Output drive for the high-side power MOSFET
HIGHDR
IN
O
I
Input signal to the MOSFET drivers (noninverting input for the TPS2832; inverting input for the TPS2833).
Output drive for the low-side power MOSFET
LOWDR
PGND
O
Power ground. Connect to the FET power ground.
V
CC
I
Input supply. Recommended that a 1 µF capacitor be connected from V
to PGND.
CC
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2832, TPS2833
FAST SYNCHRONOUS-BUCK MOSFET DRIVER
WITH DEADTIME CONTROL
SLVS195B – JANUARY 1999 – REVISED SEPTEMBER 1999
detailed description
low-side driver
The low-side driver is designed to drive low Rds(on) N-channel MOSFETs. The current rating of the driver is
2 A, source and sink.
high-side driver
The high-side driver is designed to drive low Rds(on) N-channel MOSFETs. The current rating of the driver is
2 A, source and sink. The high-side driver can be configured as a ground-reference driver or a floating bootstrap
driver. The internal bootstrap diode, is a Schottky for improved drive efficiency. The maximum voltage that can
be applied between the BOOT terminal and ground is 30 V.
†
deadtime (DT) control
Deadtime control prevents shoot through current from flowing through the main power FETs during switching
transitions by controlling the turn-on times of the MOSFET drivers. The high-side driver is not allowed to turn
on until the gate drive voltage to the low-side FET is low, and the low-side driver is not allowed to turn on until
the voltage at the junction of the power FETs (Vdrn) is low; the DT terminal connects to the junction of the power
FETs.
†
IN
TheINterminalisadigitalterminalthatistheinputcontrolsignalforthedrivers. TheTPS2832hasanoninverting
input; the TPS2833 has an inverting input.
†
High-level input voltages on IN and DT must be greater than or equal to V
CC
.
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2832, TPS2833
FAST SYNCHRONOUS-BUCK MOSFET DRIVER
WITH DEADTIME CONTROL
SLVS195B – JANUARY 1999 – REVISED SEPTEMBER 1999
†
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Supply voltage range, V
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 16 V
CC
Input voltage range:BOOT to PGND (high-side driver ON) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 30 V
BOOTLO to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 16 V
BOOT to BOOTLO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 16 V
IN (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 16 V
DT (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 30 V
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating virtual junction temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 125°C
J
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
stg
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Unless otherwise specified, all voltages are with respect to PGND.
2. High-level input voltages on the IN and DT terminals must be greater than or equal to V
.
CC
DISSIPATION RATING TABLE
T
≤ 25°C
DERATING FACTOR
T
= 70°C
T = 85°C
A
A
A
PACKAGE
POWER RATING
ABOVE T = 25°C
POWER RATING POWER RATING
A
D
580 mW
5.8 mW/°C
320 mW
232 mW
recommended operating conditions
MIN NOM
MAX
15
UNIT
V
Supply voltage, V
Input voltage
4.5
4.5
CC
BOOT to PGND
28
V
electrical characteristics over recommended operating virtual junction temperature range,
= 6.5 V, C = 3.3 nF (unless otherwise noted)
V
CC
L
supply current
PARAMETER
Supply voltage range
TEST CONDITIONS
MIN
TYP
MAX
15
UNIT
V
V
V
4.5
CC
V
=15 V
100
µA
CC
V
f
=12 V,
BOOTLO grounded,
C = 50 pF,
CC
SWX
Quiescent current
= 200 kHz,
CC
LOWDR
See Note 3
3
mA
C
= 50 pF,
HIGHDR
NOTE 3: Ensured by design, not production tested.
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2832, TPS2833
FAST SYNCHRONOUS-BUCK MOSFET DRIVER
WITH DEADTIME CONTROL
SLVS195B – JANUARY 1999 – REVISED SEPTEMBER 1999
electrical characteristics over recommended operating virtual junction temperature range,
V
= 6.5 V, C = 3.3 nF (unless otherwise noted) (continued)
CC
L
output drivers
PARAMETER
TEST CONDITIONS
MIN
0.7
1.1
2
TYP
1.1
1.5
2.4
1.4
1.6
2.7
1.8
2.5
3.5
1.7
2.4
3
MAX
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
– V
– V
– V
– V
– V
– V
= 4.5 V, V
= 4 V
BOOT
BOOT
BOOT
BOOT
BOOT
BOOT
BOOTLO
BOOTLO
BOOTLO
BOOTLO
BOOTLO
BOOTLO
HIGHDR
HIGHDR
HIGHDR
HIGHDR
HIGHDR
HIGHDR
LOWDR
LOWDR
LOWDR
LOWDR
LOWDR
LOWDR
HIGHDR
HIGHDR
HIGHDR
HIGHDR
HIGHDR
HIGHDR
LOWDR
LOWDR
LOWDR
LOWDR
LOWDR
LOWDR
Duty cycle < 2%,
< 100 µs
(see Note 3)
High-side sink
(see Note 4)
= 6.5 V, V
= 5 V
A
t
pw
= 12 V, V
= 10.5 V
= 0.5V
= 1.5 V
= 1.5 V
= 4 V
= 4.5 V, V
1.2
1.3
2.3
1.3
2
High-side
source
(see Note 4)
Duty cycle < 2%,
= 6.5 V, V
A
A
A
Ω
Ω
Ω
Ω
t
< 100 µs
pw
(see Note 3)
= 12 V, V
Peak output-
current
= 4.5 V,
= 6.5 V,
= 12 V,
= 4.5 V,
= 6.5 V,
= 12 V,
V
CC
Duty cycle < 2%,
Low-side sink
(see Note 4)
V
= 5 V
t
< 100 µs
CC
pw
(see Note 3)
V
= 10.5 V
= 0.5V
= 1.5 V
= 1.5 V
= 0.5 V
= 0.5 V
= 0.5 V
= 4 V
3
CC
V
1.4
2
CC
Low-side
source
(see Note 4)
Duty cycle < 2%,
V
t
< 100 µs
CC
pw
(see Note 3)
V
2.5
CC
– V
– V
– V
– V
– V
– V
= 4.5 V, V
5
5
BOOT
BOOT
BOOT
BOOT
BOOT
BOOT
BOOTLO
BOOTLO
BOOTLO
BOOTLO
BOOTLO
BOOTLO
High-side sink (see Note 4)
High-side source (see Note 4)
Low-side sink (see Note 4)
Low-side source (see Note 4)
= 6.5 V, V
= 12 V, V
5
= 4.5 V, V
45
45
45
9
= 6.5 V, V
= 6 V
= 12 V, V
=11.5 V
= 0.5 V
= 0.5 V
= 0.5 V
= 4 V
Output
resistance
= 4.5 V,
= 6.5 V
= 12 V,
= 4.5 V,
= 6.5 V,
= 12 V,
V
V
V
V
V
V
DRV
DRV
DRV
DRV
DRV
DRV
7.5
6
45
45
45
= 6 V
= 11.5 V
NOTES: 3. Ensured by design, not production tested.
4. The pull-up/pull-down circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the
combined current from the bipolar and MOSFET transistors. The output resistance is the Rds(on) of the MOSFET transistor when
the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
deadtime
PARAMETER
High-level input voltage
TEST CONDITIONS
MIN
TYP
MAX
UNIT
2
V
V
V
V
LOWDR
DT
Over the V
Over the V
range (see Note 3)
range
CC
CC
Low-level input voltage
High-level input voltage
Low-level input voltage
1
1
2
NOTE 3: Ensured by design, not production tested.
digital control terminals
PARAMETER
TEST CONDITIONS
Over the V range
MIN
TYP
MAX
UNIT
V
High-level input voltage
Low-level input voltage
2
CC
1
V
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2832, TPS2833
FAST SYNCHRONOUS-BUCK MOSFET DRIVER
WITH DEADTIME CONTROL
SLVS195B – JANUARY 1999 – REVISED SEPTEMBER 1999
switching characteristics over recommended operating virtual junction temperature range,
C = 3.3 nF (unless otherwise noted)
L
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
60
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
= 4.5 V,
= 6.5 V,
= 12 V,
V
V
V
= 0 V
= 0 V
= 0 V
BOOT
BOOT
BOOT
BOOTLO
BOOTLO
BOOTLO
HIGHDR output
(see Note 3)
50
ns
50
Rise time
= 4.5 V
40
CC
CC
CC
LOWDR output
(see Note 3)
= 6.5 V
= 12 V
30
ns
ns
ns
ns
ns
ns
ns
30
= 4.5 V,
= 6.5 V,
= 12 V,
V
= 0 V
= 0 V
= 0 V
60
BOOT
BOOT
BOOT
BOOTLO
BOOTLO
BOOTLO
HIGHDR output
(see Note 3)
V
V
50
50
Fall time
= 4.5 V
40
CC
CC
CC
LOWDR output
(see Note 3)
= 6.5 V
= 12 V
30
30
= 4.5 V,
= 6.5 V,
= 12 V,
= 4.5 V,
= 6.5 V,
= 12 V,
V
V
V
V
V
V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
130
100
75
BOOT
BOOT
BOOT
BOOT
BOOT
BOOT
BOOTLO
BOOTLO
BOOTLO
BOOTLO
BOOTLO
BOOTLO
HIGHDR going low
(excluding deadtime)
(see Note 3)
Propagation delay time
80
LOWDR going high
(excluding deadtime)
(see Note 3)
70
60
= 4.5 V
80
CC
CC
CC
CC
CC
CC
LOWDR going low
(excluding deadtime)
(see Note 3)
Propagation delay time
Driver nonoverlap time
= 6.5 V
70
= 12 V
= 4.5 V
= 6.5 V
= 12 V
60
40
25
15
170
135
85
DT to LOWDR and
LOWDR to HIGHDR
(see Note 3)
NOTE 3: Ensured by design, not production tested.
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2832, TPS2833
FAST SYNCHRONOUS-BUCK MOSFET DRIVER
WITH DEADTIME CONTROL
SLVS195B – JANUARY 1999 – REVISED SEPTEMBER 1999
TYPICAL CHARACTERISTICS
FALL TIME
vs
RISE TIME
vs
SUPPLY VOLTAGE
SUPPLY VOLTAGE
50
45
40
50
45
40
C
T
= 3.3 nF
= 25 °C
C
T
= 3.3 nF
= 25 °C
L
J
L
J
High Side
Low Side
35
30
35
30
High Side
Low Side
25
20
25
20
15
10
15
10
4
5
6
7
8
9
10 11 12 13 14 15
4
5
6
7
8
9
10 11 12 13 14 15
V
CC
– Supply Voltage – V
V
CC
– Supply Voltage – V
Figure 1
Figure 2
RISE TIME
vs
JUNCTION TEMPERATURE
FALL TIME
vs
JUNCTION TEMPERATURE
50
45
40
50
45
40
V
C
= 6.5 V
= 3.3 nF
CC
L
V
C
= 6.5 V
= 3.3 nF
CC
L
High Side
High Side
Low Side
35
30
35
30
Low Side
25
20
25
20
15
10
15
10
–50
–25
0
25
50
75
100
125
0
25
50
75
100
125
–50
–25
T
J
– Junction Temperature – °C
T
J
– Junction Temperature – °C
Figure 3
Figure 4
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2832, TPS2833
FAST SYNCHRONOUS-BUCK MOSFET DRIVER
WITH DEADTIME CONTROL
SLVS195B – JANUARY 1999 – REVISED SEPTEMBER 1999
TYPICAL CHARACTERISTICS
HIGH-TO-LOW PROPAGATION DELAY TIME
LOW-TO-HIGH PROPAGATION DELAY TIME
vs
vs
SUPPLY VOLTAGE, HIGH TO LOW LEVEL
SUPPLY VOLTAGE, LOW TO HIGH LEVEL
150
150
140
130
C
T
= 3.3 nF
= 25 °C
C
T
= 3.3 nF
= 25 °C
L
J
140
130
L
J
120
110
100
120
110
100
90
80
90
80
High Side
Low Side
High Side
Low Side
70
60
50
40
70
60
50
40
30
20
30
20
4
5
6
7
8
9
10 11 12 13 14 15
4
5
6
7
8
9
10 11 12 13 14 15
V
CC
– Supply Voltage – V
V
CC
– Supply Voltage – V
Figure 5
Figure 6
LOW-TO-HIGH PROPAGATION DELAY TIME
HIGH-TO-LOW PROPAGATION DELAY TIME
vs
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
150
150
140
130
V
C
= 6.5 V
= 3.3 nF
V
C
= 6.5 V
CC
L
CC
140
130
= 3.3 nF
L
120
110
100
120
110
100
High Side
90
80
90
80
High Side
70
60
50
40
70
60
50
40
Low Side
Low Side
30
20
30
20
–50
–50
–25
0
25
50
75
100
125
–25
0
25
50
75
100
125
T
J
– Junction Temperature – °C
T
J
– Junction Temperature – °C
Figure 7
Figure 8
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2832, TPS2833
FAST SYNCHRONOUS-BUCK MOSFET DRIVER
WITH DEADTIME CONTROL
SLVS195B – JANUARY 1999 – REVISED SEPTEMBER 1999
TYPICAL CHARACTERISTICS
FALL TIME
vs
RISE TIME
vs
LOAD CAPACITANCE
LOAD CAPACITANCE
1000
1000
V
T
= 6.5 V
V
T
= 6.5 V
= 25 °C
CC
= 25 °C
CC
J
J
100
10
100
10
High Side
High Side
Low Side
Low Side
1
1
0.1
1
10
100
0.1
1
10
100
C
– Load Capacitance – nF
C
– Load Capacitance – nF
L
L
Figure 9
Figure 10
SUPPLY CURRENT
vs
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
SUPPLY VOLTAGE
25
6000
5500
5000
4500
4000
T
C
= 25 °C
= 50 pF
T
C
= 25 °C
= 50 pF
J
L
J
L
20
15
500 kHz
2 MHz
300 kHz
200 kHz
3500
3000
2500
2000
1500
1000
100 kHz
50 kHz
25 kHz
10
5
1 MHz
500
0
0
4
6
8
10
12
14
16
4
6
8
10
12
14
16
V
CC
– Supply Voltage – V
V
CC
– Supply Voltage – V
Figure 11
Figure 12
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2832, TPS2833
FAST SYNCHRONOUS-BUCK MOSFET DRIVER
WITH DEADTIME CONTROL
SLVS195B – JANUARY 1999 – REVISED SEPTEMBER 1999
TYPICAL CHARACTERISTICS
PEAK SOURCE CURRENT
PEAK SINK CURRENT
vs
vs
DRIVE VOLTAGE
DRIVE VOLTAGE
4
3.5
3
4
3.5
3
T
J
= 25 °C
T = 25 °C
J
Low Side
Low Side
2.5
2
2.5
2
High Side
High Side
1.5
1
1.5
1
0.5
0
0.5
0
4
6
8
10
12
14
16
4
6
8
10
– Supply Voltage – V
CC
12
14
16
V
– Supply Voltage – V
V
CC
Figure 13
Figure 14
INPUT THRESHOLD VOLTAGE
vs
SUPPLY VOLTAGE
9
T
J
= 25 °C
8
7
6
5
4
3
2
1
0
4
6
8
10
12
14
16
V
CC
– Supply Voltage – V
Figure 15
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2832, TPS2833
FAST SYNCHRONOUS-BUCK MOSFET DRIVER
WITH DEADTIME CONTROL
SLVS195B – JANUARY 1999 – REVISED SEPTEMBER 1999
APPLICATION INFORMATION
Figure 15 shows the circuit schematic of a 100-kHz synchronous-buck converter implemented with a TL5001A
pulse-width-modulation (PWM) controller and a TPS2833 driver. The converter operates over an input range from
4.5 V to 12 V and has a 3.3 V output. The circuit can supply 3 A continuous load and the transient load is 5 A. The
converter achieves an efficiency of 94% for V = 5 V, I
=1 A, and 93% for V = 5 V, I = 3 A.
IN
load
in load
V
IN
+
C10
C5
100 µF
100 µF
+
C11
0.47 µF
R5
0 Ω
R1
1 kΩ
U1
TPS2833
R6
1 MΩ
1
2
3
4
8
7
6
5
C15
1.0 µF
IN
BOOT
Q1
Si4410
L1
27 µH
PGND HIGHDR
DT
BOOTLO
LOWDR
3.3 V
V
CC
C13
R7
3.3 Ω
10 µF
R11
4.7 Ω
C7
100 µF
+
C12
100 µF
+
Q2
C14
Si4410
C6
1 µF
1000 pF
RTN
GND
C8
0.1 µF
C3
0.0022 µF
U2
TL5001A
C2
0.033 µF
2
C4
0.022 µF
R3
180 Ω
V
CC
R2
1.6 kΩ
3
1
6
COMP
OUT
DTC
4
7
FB
RT
R4
2.32 kΩ
C9
0.22 µF
5
SCP
R8
121 kΩ
GND
8
R9
90.9 kΩ
R10
1.0 kΩ
C1
1 µF
Figure 16. 3.3 V 3 A Synchronous-Buck Converter Circuit
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2832, TPS2833
FAST SYNCHRONOUS-BUCK MOSFET DRIVER
WITH DEADTIME CONTROL
SLVS195B – JANUARY 1999 – REVISED SEPTEMBER 1999
APPLICATION INFORMATION
Great care should be taken when laying out the pc board. The power-processing section is the most critical and
will generate large amounts of EMI if not properly configured. The junction of Q1, Q2, and L1 should be very
tight. The connection from Q1 drain to the positive sides of C5, C10, and C11 and the connection from Q2 source
to the negative sides of C5, C10, and C11 should be as short as possible. The negative terminals of C7 and
C12 should also be connected to Q2 source.
Next, thetracesfromtheMOSFETdrivertothepowerswitchesshouldbeconsidered. TheBOOTLOsignalfrom
the junction of Q1 and Q2 carries the large gate drive current pulses and should be as heavy as the gate drive
traces. The bypass capacitor (C14) should be tied directly across V
and PGND.
CC
The next most sensitive node is the FB node on the controller (terminal 4 on the TL5001A) This node is very
sensitive to noise pick up and should be isolated from the high-current power stage and be as short as possible.
Thegroundaroundthecontrollerandlow-levelcircuitryshouldbetiedtothepowergroundastheoutput. Ifthese
three areas are properly laid out, the rest of the circuit should not have any other EMI problems and the power
supply will be relatively free of noise.
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS2832, TPS2833
FAST SYNCHRONOUS-BUCK MOSFET DRIVER
WITH DEADTIME CONTROL
SLVS195B – JANUARY 1999 – REVISED SEPTEMBER 1999
MECHANICAL DATA
D (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PIN SHOWN
0.050 (1,27)
0.020 (0,51)
0.014 (0,35)
0.010 (0,25)
M
14
8
0.008 (0,20) NOM
0.244 (6,20)
0.228 (5,80)
0.157 (4,00)
0.150 (3,81)
Gage Plane
0.010 (0,25)
1
7
0°–8°
0.044 (1,12)
A
0.016 (0,40)
Seating Plane
0.004 (0,10)
0.010 (0,25)
0.004 (0,10)
0.069 (1,75) MAX
PINS **
8
14
16
DIM
0.197
(5,00)
0.344
(8,75)
0.394
(10,00)
A MAX
0.189
(4,80)
0.337
(8,55)
0.386
(9,80)
A MIN
4040047/D 10/96
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).
D. Falls within JEDEC MS-012
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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