TPS54010PWPRG4 [TI]
输入电压为 3V 至 4V 的 14A 同步降压转换器 | PWP | 28 | -40 to 85;型号: | TPS54010PWPRG4 |
厂家: | TEXAS INSTRUMENTS |
描述: | 输入电压为 3V 至 4V 的 14A 同步降压转换器 | PWP | 28 | -40 to 85 开关 光电二极管 转换器 |
文件: | 总25页 (文件大小:688K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Typical Size
6,4 mm X 9,7 mm
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
2.2 – 4 -V, 14-A OUTPUT SYNCHRONOUS BUCK PWM SWITCHER
WITH INTEGRATED FETs (SWIFT™)
FEATURES
DESCRIPTION
•
Separate Low-Voltage Power Bus
As a member of the SWIFT™ family of dc/dc regu-
lators, the TPS54010 low-input voltage, high-output
current synchronous buck PWM converter integrates
all required active components. Included on the
substrate with the listed features are a true, high-
performance, voltage error amplifier that enables
maximum performance under transient conditions
and flexibility in choosing the output filter L and C
components; an undervoltage-lockout circuit to pre-
vent start-up until the VIN input voltage reaches 3 V;
an internally and externally set slowstart circuit to limit
in-rush currents; and a power-good output useful for
processor/logic reset, fault signaling, and supply se-
quencing.
•
8-mΩ MOSFET Switches for High Efficiency at
14-A Continuous Output
•
•
Adjustable Output Voltage Down to 0.9 V
Externally Compensated With 1% Internal
Reference Accuracy
•
•
Fast Transient Response
Wide PWM Frequency: Adjustable 280 kHz to
700 kHz
•
•
Load Protected by Peak Current Limit and
Thermal Shutdown
Integrated Solution Reduces Board Area and
Total Cost
The TPS54010 is available in a thermally enhanced
28-pin TSSOP (PWP) PowerPAD™ package, which
eliminates bulky heatsinks.
APPLICATIONS
•
Low-Voltage, High-Density Systems With
Power Distributed at 2.5 V, 3.3 V Available
•
Point of Load Regulation for High-
Performance DSPs, FPGAs, ASICs, and
Microprocessors
•
Broadband, Networking, and Optical
Communications Infrastructure
SIMPLIFIED SCHEMATIC
EFFICIENCY
vs
2.5 V or 3.3 V
0.68 mH
Input1
OUTPUT CURRENT
Output
PVIN
PH
100
TPS54010
350 mF
0.047 mF
0.1 mF
200 mF
BOOT
PGND
95
90
85
3.3 V
Input2
1 mF
VIN
120 pF
4.64 kW
COMP
10 kW
80
75
70
VBIAS
VSENSE
3300 pF
AGND
422 W
1 mF
65
60
VIN = 3.3 V,
PVIN = 2.5 V,
14.7 kW
1500 pF
V
= 1.5 V,
Compensation
Network
O
55
50
f = 700 kHz
s
0
2
4
6
8
10
12
14 16
I
− Output Current − A
O
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
SWIFT, PowerPAD are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004, Texas Instruments Incorporated
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
TA
-40°C to 85°C
OUTPUT VOLTAGE
PACKAGE
Plastic HTSSOP (PWP)(1)
PART NUMBER
Adjustible down to 0.9 V
TPS54010PWP
(1) The PWP package is also available taped and reeled. Add an R suffix to the device type (i.e., TPS54010PWPR). See the application
section of the data sheet for PowerPAD drawing and layout information.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1)
TPS54010
–0.3 to 7
–0.3 to 6
–0.3 to 4
–0.3 to 4.5
–0.3 to 10
–0.3 to 7
–0.6 to 6
UNIT
SS/ENA, SYNC
RT
VI
Input voltage range
VSENSE
V
PVIN, VIN
BOOT
VBIAS, COMP, PWRGD
PH
VO
VO
Output voltage range
Source current
V
PH
Internally limited
COMP, VBIAS
PH
6
25
mA
A
IS
Sink current
COMP
6
mA
SS/ENA, PWRGD
AGND to PGND
10
Voltage differential
±0.3
V
TJ
Operating junction temperature range
Storage temperature range
–40 to 125
–65 to 150
300
°C
°C
°C
kV
V
Tstg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
Human body model (HBM)
CDM
1.5
Electrostatic Discharge (ESD) ratings
750
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
MIN
3
NOM
MAX
4
UNIT
V
VI
Input voltage, VIN
Power Input voltage, PVIN
Operating junction temperature
2.2
–40
4
V
TJ
125
°C
DISSIPATION RATINGS(1)(2)
THERMAL IMPEDANCE
JUNCTION-TO-AMBIENT
TA = 25°C
POWER RATING
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
PACKAGE
28-Pin PWP with solder
14.4°C/W
6.94 W(3)
3.81 W
2.77 W
28-Pin PWP without solder
27.9°C/W
3.58 W
1.97 W
1.43 W
(1) For more information on the PWP package, refer to TI technical brief, literature number SLMA002.
(2) Test board conditions:
a. 3 inch x 3 inch, 4 layers, thickness: 0.062 inch
b. 1.5-oz. copper traces located on the top of the PCB
c. 1.5-oz. copper ground plane on the bottom of the PCB
d. 0.5-oz. copper ground planes on the 2 internal layers
e. 12 thermal vias (see Recommended Land Pattern in applications section of this data sheet)
(3) Maximum power dissipation may be limited by over current protection.
2
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
ELECTRICAL CHARACTERISTICS
TJ = -40°C to 125°C, VIN = 3 V to 4 V, PVIN = 2.2 V to 4 V (unless otherwise noted)
PARAMETER
SUPPLY VOLTAGE, VIN
VI Input voltage, VIN
TEST CONDITIONS
MIN
TYP
MAX UNIT
3
4
4
V
V
Supply voltage range, PVIN
Output = 1.8 V
2.2
fs = 350 kHz, RT open, PH pin open, PVIN = 2.5 V,
SYNC = 0 V
6.3
8.3
10
13
mA
mA
VIN
fs = 550 kHz, RT open, PH pin open, SYNC ≥ 2.5 V,
PVIN = 2.5 V
SHUTDOWN, SS/ENA = 0 V, PVIN = 2.5 V
1
6
1.4
8
mA
mA
IQ
Quiescent current
fs = 350 kHz, RT open, PH pin open, PVIN = 3.3 V,
SYNC = 0 V
PVIN
fs = 550 kHz, RT open, PH pin open, SYNC ≥ 2.5 V,
PVIN = 2.5 V, VIN = 3.3 V
6
9
mA
µA
SHUTDOWN, SS/ENA = 0 V, VIN = 3.3 V
<140
UNDERVOLTAGE LOCKOUT (VIN)
Start threshold voltage, UVLO
Stop threshold voltage, UVLO
Hysteresis voltage, UVLO
2.95
2.8
3
V
V
2.7
0.11
2.5
V
Rising and falling edge deglitch, UVLO(1)
µs
BIAS VOLTAGE
Output voltage, VBIAS
I(VBIAS) = 0
2.7
2.8
2.9
V
Output current, VBIAS(2)
100
µA
CUMULATIVE REFERENCE
Vref
REGULATION
Line regulation(1)(3)
Load regulation(1)(3)
Accuracy
0.882
0.891
0.900
V
IL = 7 A, fs = 350 kHz, TJ = 85°C
0.05
%/V
%/A
IL = 0 A to 14 A, fs = 350 kHz, TJ = 85°C
PVIN = 2.5 V, VIN = 3.3 V
0.013
OSCILLATOR
RT open(1), SYNC ≤ 0.8 V
280
440
252
460
663
2.5
350
550
280
500
700
420
660
308
540
762
Internally set—free running frequency
kHz
kHz
RT open(1), SYNC ≥ 2.5 V
RT = 180 kΩ (1% resistor to AGND)(1)
RT = 100 kΩ (1% resistor to AGND)
RT = 68 kΩ (1% resistor to AGND)(1)
Externally set—free running frequency range
High-level threshold voltage, SYNC
Low-level threshold voltage, SYNC
Pulse duration, SYNC(1)
V
V
0.8
50
ns
kHz
V
Frequency range, SYNC
300
700
Ramp valley(1)
0.75
1
Ramp amplitude (peak-to-peak)(1)
Minimum controllable on time(1)
Maximum duty cycle(1)
V
200
ns
90%
(1) Specified by design
(2) Static resistive loads only
(3) Specified by the circuit used in Figure 12
3
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
ELECTRICAL CHARACTERISTICS (continued)
TJ = -40°C to 125°C, VIN = 3 V to 4 V, PVIN = 2.2 V to 4 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
ERROR AMPLIFIER
Error amplifier open-loop voltage gain
Error amplifier unity gain bandwidth
1 kΩ COMP to AGND(4)
90
3
110
5
dB
Parallel 10 kΩ, 160 pF COMP to AGND(4)
Powered by internal LDO(4)
VSENSE = Vref
MHz
Error amplifier common mode input voltage
range
0
VBIAS
250
V
Input bias current, VSENSE
60
nA
Output voltage slew rate (symmetric), COMP
1
1.4
V/µs
PWM COMPARATOR
PWM comparator propagation delay time, PWM
comparator input to PH pin (excluding
deadtime)
10-mV overdrive(4)
70
85
ns
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA
Enable hysteresis voltage, SS/ENA(4)
Falling edge deglitch, SS/ENA(4)
Internal slow-start time
0.82
1.2
0.03
2.5
1.4
V
V
µs
ms
µA
mA
2.6
2
3.35
5
4.1
8
Charge current, SS/ENA
SS/ENA = 0 V
Discharge current, SS/ENA
SS/ENA = 0.2 V, VIN = 2.7 V, PVIN = 2.5 V
1.3
2.3
4
POWER GOOD
Power-good threshold voltage
Power-good hysteresis voltage(4)
Power-good falling edge deglitch(4)
Output saturation voltage, PWRGD
Leakage current, PWRGD
VSENSE falling
93
3
%Vref
%Vref
µs
35
I(sink) = 2.5 mA
0.18
0.3
1
V
VIN = 3.3 V, PVIN = 2.5 V
µA
CURRENT LIMIT
Current limit
VIN = 3.3 V, PVIN = 2.5 V (4), Output shorted
14.5
135
21
100
200
A
Current limit leading edge blanking time(4)
Current limit total response time(4)
ns
ns
THERMAL SHUTDOWN
Thermal shutdown trip point(4)
Thermal shutdown hysteresis(4)
165
10
°C
°C
OUTPUT POWER MOSFETS
VIN = 3 V, PVIN = 2.5 V
VIN = 3.6 V, PVIN = 2.5 V
8
8
21
18
rDS(on) Power MOSFET switches
mΩ
(4) Specified by design
4
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
DEVICE INFORMATION
PWP PACKAGE
(TOP VIEW)
1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
AGND
VSENSE
COMP
PWRGD
BOOT
PH
RT
SYNC
SS/ENA
VBIAS
VIN
PVIN
PVIN
PVIN
PVIN
PGND
PGND
PGND
PGND
PGND
2
3
4
5
6
7
PH
PH
PH
PH
PH
PH
PH
PH
THERMAL
PAD
8
9
10
11
12
13
14
TERMINAL FUNCTIONS
PIN NAME
PIN NUMBER DESCRIPTION
Analog ground. Return for compensation network/output divider, slow-start capacitor, VBIAS capacitor, and
RT resistor. If using the PowerPAD, connect it to AGND. See the Application Information section for
details.
AGND
1
Bootstrap output. 0.022-µF to 0.1-µF low-ESR capacitor connected from BOOT to PH generates floating
drive for the high-side FET driver.
BOOT
COMP
5
3
Error amplifier output. Connect frequency compensation network from COMP to VSENSE
Power ground. High current return for the low-side driver and power MOSFET. Connect PGND with large
copper areas to the input and output supply returns, and negative terminals of the input and output
capacitors. A single point connection to AGND is recommended.
15, 16, 17, 18,
19
PGND
PH
6-14
Phase output. Junction of the internal high-side and low-side power MOSFETs, and output inductor.
Input supply for the power MOSFET switches and internal bias regulator. Bypass the PVIN pins to the
PGND pins close to device package with a high-quality, low-ESR 10-µF ceramic capacitor.
PVIN
20, 21, 22, 23
Power-good open-drain output. High when VSENSE > 90% Vref, otherwise PWRGD is low. Note that
output is low when SS/ENA is low or the internal shutdown signal is active.
PWRGD
RT
4
28
26
Frequency setting resistor input. Connect a resistor from RT to AGND to set the switching frequency, fs.
Slow-start/enable input/output. Dual function pin which provides logic input to enable/disable device
operation and capacitor input to externally set the start-up time.
SS/ENA
Synchronization input. Dual function pin which provides logic input to synchronize to an external oscillator
or pin select between two internally set switching frequencies. When used to synchronize to an external
signal, a resistor must be connected to the RT pin.
SYNC
VBIAS
27
25
Internal bias regulator output. Supplies regulated voltage to internal circuitry. Bypass VBIAS pin to AGND
pin with a high-quality, low-ESR 0.1-µF to 1.0-µF ceramic capacitor.
Input supply for the internal control circuits. Bypass the VIN pin to the PGND pins close to device package
with a high-quality, low-ESR 1-µF ceramic capacitor.
VIN
24
2
VSENSE
Error amplifier inverting input. Connect to output voltage compensation network/output divider.
5
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
FUNCTIONAL BLOCK DIAGRAM
VBIAS
AGND
VIN
VIN
REG
VBIAS
3.0 − 4.0 V
2.2 − 4.0 V
Enable
Comparator
SS/ENA
Falling
Edge
Deglitch
SHUTDOWN
PVIN
ILIM
Comparator
1.2 V
Thermal
Shutdown
150°C
Hysteresis: 0.03 V
Leading
Edge
2.5 µs
Blanking
VIN UVLO
Comparator
Falling
and
100 ns
VIN
BOOT
Rising
Edge
2.95 V
Deglitch
Hysteresis: 0.11 V
8 mΩ
2.5 µs
SS_DIS
SHUTDOWN
L
OUT
V
O
PH
Internal/External
Slow-start
(Internal Slow-start Time = 3.35 ms
+
−
C
O
Adaptive Dead-Time
and
Control Logic
R
S
Q
Error
Amplifier
PWM
Comparator
Reference
VIN
VREF = 0.891 V
8 mΩ
OSC
PGND
Power-Good
Comparator
PWRGD
VSENSE
Falling
Edge
0.90 V
ref
Deglitch
TPS54010
Hysteresis: 0.03 Vref
SHUTDOWN
35 µs
VSENSE
COMP
RT SYNC
6
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
TYPICAL CHARACTERISTICS
DRAIN-SOURCE ON-STATE
DRAIN-SOURCE ON-STATE
RESISTANCE
INTERNALLY SET OSCILLATOR
FREQUENCY
RESISTANCE
vs
vs
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
12
10
8
12
750
VIN = 3.3 V,
VIN = 3.6 V,
PVIN = 2.5 V,
PVIN = 2.5 V,
10
I
= 9 A
I
= 9 A
O
O
650
SYNC ≥ 2.5 V
8
6
4
2
0
550
6
450
4
2
0
SYNC ≤ 0.8 V
350
250
−40
0
25
85
125
125
−40 −20
−40 −20
0
20 40 60 80 100
100 125
0
20 40 60 80
T
J
− Junction Temperature − °C
T
J
− Junction Temperature − °C
T
J
− Junction Temperature − °C
Figure 1.
Figure 2.
Figure 3.
EXTERNALLY SET OSCILLATOR
FREQUENCY
VOLTAGE REFERENCE
vs
JUNCTION TEMPERATURE
DEVICE POWER DISSIPATION
vs
vs
JUNCTION TEMPERATURE
OUTPUT CURRENT
0.895
0.893
0.891
0.889
8
800
700
600
V
= 1.5 V,
O
V = PVIN = 3.3 V,
7
6
5
4
3
2
I
T
J
= 125°C
RT = 68 kΩ
RT = 100 kΩ
RT = 180 kΩ
500
400
300
200
0.887
0.885
1
0
−40
0
25
85
125
−40
0
25
85
125
0
5
10
15
20
T
J
− Junction Temperature − °C
T
J
− Junction Temperature − °C
I
− Output Current − A
O
Figure 4.
Figure 5.
Figure 6.
REFERENCE VOLTAGE
vs
INTERNAL SLOWS-START TIME
vs
JUNCTION TEMPERATURE
ERROR AMPLIFIER
OPEN-LOOP RESPONSE
INPUT VOLTAGE
0
3.80
0.895
0.893
0.891
0.889
140
R
C
T
= 10 kΩ,
= 160 pF,
= 25°C
L
VIN = 3.3 V,
PVIN = 2.5 V
PVIN = 2.5 V
−20
120
100
80
L
3.65
3.50
−40
−60
−80
A
Phase
Gain
3.35
−100
−120
−140
−160
−180
−200
60
3.20
3.05
40
20
0.887
0.885
0
2.90
2.75
−20
1
10 100 1 k 10 k 100 k 1 M 10 M
−40
0
25
85
125
3
3.1
3.2
3.3
3.4
3.5
3.6
f − Frequency − Hz
T
J
− Junction Temperature − °C
V − Input Voltage − V
I
Figure 7.
Figure 8.
Figure 9.
7
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
APPLICATION INFORMATION
PCB LAYOUT
ANALOG GROUND TRACE
FREQUENCY SET RESISTOR
AGND
RT
SYNC
SS/ENA
VBIAS
VIN
INPUT
BYPASS
CAPACITOR
SLOW-START
CAPACITOR
VSENSE
COMP
COMPENSATION
NETWORK
BIAS CAPACITOR
PWRGD
BOOT
BOOT
CAPACITOR
EXPOSED
POWERPAD
AREA
PH
PVIN
PVIN
PVIN
PVIN
VOUT
PH
PH
PVIN
PH
PH
PH
PGND
PGND
OUTPUT INDUCTOR
OUTPUT
PGND
PGND
PGND
FILTER
CAPACITOR
INPUT
INPUT
BULK
BYPASS
CAPACITOR FILTER
TOPSIDE GROUND AREA
VIA to GROUND PLANE
Figure 10. TPS54010 Layout
The PVIN pins are connected together on the printed-
circuit board (PCB) and bypassed with a low ESR
ceramic bypass capacitor. Care should be taken to
minimize the loop area formed by the bypass capaci-
tor connections, the PVIN pins, and the TPS54010
ground pins. The minimum recommended bypass
capacitance is a 10-µF ceramic capacitor with a X5R
or X7R dielectric. The optimum placement is as close
as possible to the PVIN pins, the AGND, and PGND
pins. See Figure 10 for an example of a board layout.
If the VIN is connected to a separate source supply, it
is bypassed with its own capacitor. There is an area
of ground on the top layer of the PCB, directly under
the IC, with an exposed area for connection to the
PowerPAD. Use vias to connect this ground area to
any internal ground planes. Use additional vias at the
ground side of the input and output filter capacitors.
The AGND and PGND pins are tied to the PCB
ground by connecting them to the ground area under
the device as shown in Figure 10. Use a separate
wide trace for the analog ground signal path. This
analog ground is used for the voltage set point
divider, timing resistor RT, slow-start capacitor, and
bias capacitor grounds. The PH pins are tied together
and routed to the output inductor. Because the PH
connection is the switching node, an inductor is
located close to the PH pins, and the area of the PCB
conductor is minimized to prevent excessive capaci-
tive coupling. Connect the boot capacitor between the
phase node and the BOOT pin as shown in Fig-
ure 10. Keep the boot capacitor close to the IC, and
minimize the conductor trace lengths. Connect the
output filter capacitor(s) between the VOUT trace and
PGND. It is important to keep the loop formed by the
PH pins, Lout, Cout, and PGND as small as is
practical. Place the compensation components from
the VOUT trace to the VSENSE and COMP pins. Do
not place these components too close to the PH
trace. Due to the size of the IC package and the
device pinout, they must be routed close, but main-
8
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
tain as much separation as possible while keeping
the layout compact. Connect the bias capacitor from
the VBIAS pin to analog ground using the isolated
analog ground trace. If a slow-start capacitor or RT
resistor is used, or if the SYNC pin is used to select
350-kHz operating frequency, connect them to this
trace.
ted to the largest area available. Additional areas on
the top or bottom layers also help dissipate heat, and
any area available must be used when 6-A or greater
operation is desired. Connection from the exposed
area of the PowerPAD to the analog ground plane
layer must be made using 0.013-inch diameter vias to
avoid solder wicking through the vias.
For operation at full rated load current, the analog
Eight vias must be in the PowerPAD area with four
additional vias located under the device package. The
size of the vias under the package, but not in the
exposed thermal pad area, can be increased to
0.018. Additional vias beyond the twelve rec-
ommended that enhance thermal performance must
be included in areas not under the device package.
ground
plane
must
provide
an
adequate
heat-dissipating area. A 3-inch by 3-inch plane of
1-ounce copper is recommended, though not manda-
tory, depending on ambient temperature and airflow.
Most applications have larger areas of internal ground
plane available, and the PowerPAD must be connec-
Minimum Recommended Thermal Vias: 8 x 0.013 Diameter Inside
PowerPAD Area 4 x 0.018 Diameter Under Device as Shown.
Additional 0.018 Diameter Vias May Be Used if Top Side Analog Ground
Area Is Extended.
Ø0.0130
8 PL
4 PL Ø0.0180
Connect Pin 1 to Analog Ground Plane
in This Area for Optimum Performance
0.0150
0.06
0.0339
0.0650
0.0500
0.3820 0.3478
0.2090
0.0256
0.0500
0.0500
0.0650
0.0339
Minimum Recommended Exposed
Copper Area for PowerPAD. 5mm
Stencils May Require 10 Percent
0.1700
Larger Area
0.1340
0.0630
Minimum Recommended Top
Side Analog Ground Area
0.0400
Figure 11. Recommended Land Pattern for 28-Pin PWP PowerPAD
9
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
µF
kΩ
µF
µF
µF
kΩ
µF
µF
kΩ
µ
µF
µF
µF
kΩ
kΩ
kΩ
Figure 12. Application Circuit, 2.5 V to 1.5 V
Figure 12 shows the schematic for typical
a
TPS54010 application. The TPS54010 can provide
up to 14-A output current at a nominal output voltage
of 1.5 V. Nominal input voltages are 2.5 V for PVIN
and 3.3 V for VIN. For proper thermal performance,
the exposed PowerPAD underneath the device must
be soldered down to the printed-circuit board.
DESIGN PARAMETERS
To begin the design process, a few parameters must
be decided. The designer needs to know:
•
•
•
•
•
•
Input voltage range
Output voltage
Input ripple voltage
Output ripple voltage
Output current rating
Operating frequency
DESIGN PROCEDURE
The following design procedure can be used to select
component values for the TPS54010. Alternately, the
SWIFT Designer Software may be used to generate a
complete design. The SWIFT Designer Software uses
an iterative design procedure and accesses a com-
prehensive database of components when generating
a design. This section presents a simplified dis-
cussion of the design process.
For this design example, use the following as the
input parameters:
DESIGN PARAMETER
Input voltage (VIN)
EXAMPLE VALUE
3.3 V
Input voltage range (PVIN)
Output voltage
2.2 to 3.5 V
1.5 V
Input ripple voltage
Output ripple voltage
Output current rating
Operating frequency
300 mV
50 mV
14 A
700 kHz
10
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
SWITCHING FREQUENCY
capacitors, TDK C3225X5R1C106M are each rated
for 16 V, and the ripple current capacity is greater
than 3 A at the operating frequency of 700 kHz. Total
ripple current handling is in excess of 10.4 A. It is
important that the maximum ratings for voltage and
current are not exceeded under any circumstance.
The switching frequency can be set to either one of
two internally programmed frequencies or set to a
externally programmed frequency. With the RT pin
open, setting the SYNC pin at or above 2.5 V selects
550-kHz operation, whereas grounding or leaving the
SYNC pin open selects 350-kHz operation. For this
design, the switching frequency is externally pro-
grammed using the RT pin. By connecting a resistor
(R4) from RT to AGND, any frequency in the range of
250 to 700 kHz can be set. Use Equation 1 to
determine the proper value of RT.
OUTPUT FILTER COMPONENTS
Two components need to be selected for the output
filter, L1 and C2. Because the TPS54010 is an
externally compensated device, a wide range of filter
component types and values can be supported.
500 kHz
ƒs(kHz)
R4(kW) +
100 kW
Inductor Selection
(1)
To calculate the minimum value of the output induc-
tor, use Equation 4
In this example circuit, R4 is calculated to be 71.5 kΩ
and the switching frequency is set at 700 kHz.
ǒVin(MAX) OUTǓ
V
* V
OUT
INPUT CAPACITORS
L
+
MIN
V
K
I
F
sw
The TPS54010 requires an input de-coupling capaci-
tor and, depending on the application, a bulk input
capacitor. The minimum value for the de-coupling
capacitor, C9, is 10 µF. A high-quality ceramic type
X5R or X7R is recommended. The voltage rating
should be greater than the maximum input voltage.
Additionally, some bulk capacitance may be needed,
especially if the TPS54010 circuit is not located within
about 2 inches from the input voltage source. The
value for this capacitor is not critical but it also should
be rated to handle the maximum input voltage includ-
ing ripple voltage, and should filter the output so that
input ripple voltage is acceptable.
IN(MAX)
IND
OUT
(4)
KIND is a coefficient that represents the amount of
inductor ripple current relative to the maximum output
current. For designs using low ESR output capacitors
such as ceramics, use KIND = 0.3. When using higher
ESR output capacitors, KIND = 0.2 yields better
results.
For this design example, use KIND = 0.2 to keep the
inductor ripple current small. The minimum inductor
value is calculated to be 0.44 µH.
For the output filter inductor, it is important that the
RMS current and saturation current ratings not be
exceeded. The RMS inductor current can be found
from Equation 5:
This input ripple voltage can be approximated by
Equation 2:
I
0.25
2
OUT(MAX)
) ǒIOUT(MAX)
MAXǓ
DV
+
ESR
ȡ
ȣ
ȧ
ǒVin(MAX)
IN(MAX)
Ǔ
sw
* V
PVIN
OUT
F
OUT
C
ƒ
sw
1
12
I
+
I2
)
V
OUT
BULK
Ǹ
ȧ
Ȣ
L(RMS)
OUT(MAX)
V
L
0.8Ȥ
(2)
Where IOUT(MAX) is the maximum load current.
(5)
The TPS54010 requires an input de-coupling capaci-
tor and, depending on the application, a bulk input
capacitor. ƒsw is the switching frequency, C(BULK) is
the bulk capacitor value and ESRMAX is the maximum
series resistance of the bulk capacitor.
and the peak inductor current can be found from
Equation 6
ǒVin(MAX) OUTǓ
V
* V
OUT
1.6 V
I
+ I
)
L(PK)
OUT(MAX)
L
F
sw
IN(MAX)
OUT
The maximum RMS ripple current also needs to be
checked. For worst-case conditions, this can be
approximated by Equation 3:
(6)
For this design, the RMS inductor current is 15.4 A,
and the peak inductor current is 15.1 A. For this
design, a Vishay IHLP2525CZ-01 style output induc-
tor is specified. The largest value greater than 0.44
µH that meets these current requirements is 0.68 µH.
Increasing the inductor value decreases the ripple
I
OUT(MAX)
I
+
CIN
2
(3)
In this case, the input ripple voltage would be 155 mV
and the RMS ripple current would be 7 A. The
maximum voltage across the input capacitors would
be Vin max plus delta Vin/2. The chosen bulk
capacitor, a Sanyo POSCAP 6TPD330M is rated for
6.3 V and 4.4 A of ripple current; two bypass
11
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
current and the corresponding output ripple voltage.
The inductor value can be decreased if more margin
in the RMS current is required. In general, inductor
values for use with the TPS54010 falls in the range of
0.47 to 2.2 µH.
specified in the initial design parameters. The output
ripple voltage is the inductor ripple current times the
ESR of the output filter; therefore, the maximum
specified ESR as listed in the capacitor data sheet is
given by Equation 9 :
ȡV
0.8ȣ
ȧ
L
F
sw
OUT
IN(MAX)ǒV
OUTǓ
Capacitor Requirements
ESR
+ N
DV
ȧ
MAX
C
P*P(MAX)
V
* V
IN(MAX)
The important design factors for the output capacitor
are dc voltage rating, ripple current rating, and
equivalent series resistance (ESR). The dc voltage
and ripple current ratings cannot be exceeded. The
ESR is important because along with the inductor
current it determines the amount of output ripple
voltage. The actual value of the output capacitor is
not critical, but some practical limits do exist. Con-
sider the relationship between the desired
closed-loop crossover frequency of the design and
LC corner frequency of the output filter. In general, it
is desirable to keep the closed-loop crossover fre-
quency at less than 1/5 of the switching frequency.
With high switching frequencies such as the 500 kHz
frequency of this design, internal circuit limitations of
the TPS54010 limit the practical maximum crossover
frequency to about 70 kHz. To allow for adequate
phase gain in the compensation network, the LC
corner frequency should be about one decade or so
below the closed-loop crossover frequency. This
limits the minimum capacitor value for the output filter
OUT
(9)
and the maximum ESR required is 22.2 mΩ. A
capacitor that meets these requirements is a Cornell
Dubilier Special Polymer (SP) ESRD101M06 rated at
6.3 V with a maximum ESR of 0.015 Ω and a ripple
current rating of 2 A. An additional small 0.1-µF
ceramic bypass capacitor C13 is a also used.
Other capacitor types work well with the TPS54010,
depending on the needs of the application.
Compensation Components
The external compensation used with the TPS54010
allows for a wide range of output filter configurations.
A large range of capacitor values and types of
dielectric are supported. The design example uses
Type-3 compensation consisting of R1, R3, R5, C6,
C7, and C8. Additionally, R2 along with R1 forms a
voltage divider network that sets the output voltage.
These component reference designators are the
same as those used in the SWIFT Designer
Software. There are a number of different ways to
design a compensation network. This procedure
outlines a relatively simple procedure that produces
good results with most output filter combinations. Use
the SWIFT Designer Software for designs with un-
usually high closed-loop crossover frequencies, low
value, low ESR output capacitors such as ceramics
or if you are unsure about the design procedure.
to:
2
1
K
ǒ Ǔ
2p ƒ
C
+
OUT(MIN)
L
CO
OUT
(7)
Where K is the frequency multiplier for the spread
between fLC and fCO. K should be between 5 and 15,
typically 10 for one decade difference. For a desired
crossover of 100-kHz and a 0.68-µH inductor, the
minimum value for the output capacitor is 93 µF using
a minimum K factor of 5. Increasing the K factor
would require using a larger capacitance as 100 kHz
is approaching the maximum practical closed-loop
crossover frequency for this device. The selected
output capacitor must be rated for a voltage greater
than the desired output voltage plus one half the
ripple voltage. Any de-rating amount must also be
included. The maximum RMS ripple current in the
output capacitors is given by Equation 8:
When designing compensation networks for the
TPS54010, a number of factors need to be con-
sidered. The gain of the compensated error amplifier
should not be limited by the open-loop amplifier gain
characteristics and should not produce excessive
gain at the switching frequency. Also, the closed-loop
crossover frequency should be set less than one-fifth
of the switching frequency, and the phase margin at
crossover must be greater than 45 degrees. The
general procedure outlined here produces results
consistent with these requirements without going into
great detail about the theory of loop compensation.
ȡVOUT
ȣ
Ǔ
ǒVPVIN(MAX)
* V
ȧ
OUT ȧ
1
12
I
+
COUT(RMS)
Ǹ
V
L
F
sw
PVIN(MAX)
OUT
First, calculate the output filter LC corner frequency
using Equation 10:
(8)
1
The calculated RMS ripple current is 780 mA in the
output capacitors.
ƒ
+
LC
2p ǸL
C
OUT OUT
For the design example, fLC = 19.3 kHz.
(10)
The maximum ESR of the output capacitor is deter-
mined by the amount of allowable output ripple as
12
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
1
The closed-loop crossover frequency should be
chosen to be greater than fLC and less than one-fifth
of the switching frequency. Also, the crossover fre-
quency should not exceed 150 kHz, as the error
amplifier may not provide the desired gain. For this
design, a crossover frequency of 100 kHz was
chosen. This value is chosen for comparatively wide
loop bandwidth while still allowing for adequate phase
boost to insure stability.
C8 +
2pR1 ƒ
LC
(20)
The first pole, fP1 is located to coincide with output
filter ESR zero frequency. This frequency is given by:
1
ƒ
+
ESR0
2pR
C
ESR OUT
(21)
where RESR is the equivalent series resistance of the
output capacitor.
Next, calculate the R2 resistor value for the output
voltage of 1.5 V using Equation 11:
In this case, the ESR zero frequency is 88.4 kHz, and
R5 can be calculated from:
R1 0.891
R2 +
V
* 0.891
1
OUT
(11)
R5 +
2pC8 ƒ
ESR
(22)
For any TPS54010 design, start with an R1 value of
10 kΩ. R2 is 14.7 kΩ.
The final pole is placed at a frequency above the
closed-loop crossover frequency high enough to not
cause the phase to decrease too much at the
crossover frequency while still providing enough at-
tenuation so that there is little or no gain at the
switching frequency. The fP2 pole location for this
circuit is set to 3.5 times the closed-loop crossover
frequency and the last compensation component
value C7 can be derived:
Now, the values for the compensation components
that set the poles and zeros of the compensation
network can be calculated. Assuming that R1 >> than
R5 and C6 >> C7, the pole and zero locations are
given by Equation 12 through Equation 18:
1
ƒ
ƒ
ƒ
ƒ
+
+
+
+
Z1
Z2
P1
P2
2pR3C6
(12)
(13)
(14)
(15)
1
1
2pR1C8
C7 +
7pR3 ƒ
CO
(23)
1
2pR5C8
Note that capacitors are only available in a limited
range of standard values, so the nearest standard
value has been chosen for each capacitor. The
measured closed-loop response for this design is
shown in Figure 5.
1
2pR3C7
Additionally, there is a pole at the origin, which has
unity gain at a frequency:
1
ƒ
+
BIAS AND BOOTSTRAP CAPACITORS
INT
2pR1C6
(16)
Every TPS54010 design requires a bootstrap capaci-
tor, C3, and a bias capacitor, C4. The bootstrap
capacitor must be a 0.1 µF. The bootstrap capacitor
is located between the PH pins and BOOT. The bias
capacitor is connected between the VBIAS pin and
AGND. The value should be 1.0 µF. Both capacitors
should be high-quality ceramic types with X7R or
X5R grade dielectric for temperature stability. They
should be placed as close to the device connection
pins as possible.
This pole is used to set the overall gain of the
compensated error amplifier and determines the
closed-loop crossover frequency. Because R1 is
given as 1 kΩ and the crossover frequency is
selected as 100 kHz, the desired fINT can be calcu-
lated from Equation 17:
ƒ
CO
ƒ
+
INT
V
2
IN(MAX)
(17)
And the value for C6 is given by Equation 18:
POWER GOOD
1
C6 +
The TPS54010 is provided with a power-good output
pin PWRGD. This output is an open-drain output and
is intended to be pulled up to a 3.3-V or 5-V logic
supply. A 10-kΩ pullup works well in this application.
2pR1 ƒ
INT
(18)
The first zero, fZ1 is located at one-half the output
filter LC corner frequency; so, R3 can be calculated
from:
1
R3 +
pC6 ƒ
LC
(19)
The second zero, fZ2 is located at the output filter LC
corner frequency; so, C8 can be calculated from:
13
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
SNUBBER CIRCUIT
large degree on parasitic effects, it is best to choose
these component values based on actual measure-
ments of any design layout. See literature number
SLVP100 for more detailed information on snubber
design.
R10 and C11 of the application schematic comprise a
snubber circuit. The snubber is included to reduce
overshoot and ringing on the phase node when the
internal high-side FET turns on. Because the fre-
quency and amplitude of the ringing depends to a
kΩ
µ
µ
µ
µ
71.5 kΩ
µF
µF
kΩ
µ
µF
µF
µF
Ω
10 kΩ
14.7 kΩ
The following part numbers are used for test purposes:
C1 = T520D337M0O4ASE015 (Kemet)
C2 = TDK C3225X5R0J107M ceramic 6.3 V X5R
L1 = IHLP2525CZ−01 0.68 µH (Vishay Dale)
Figure 13. 1.5-V Power Supply With Ceramic Output Capacitors
Figure 13 shows an application where all ceramic
capacitors, including the main output filter capacitor,
are used. The compensation network components
were calculated using SWIFT Designer Software. See
Figure 22 through Figure 30 for loop response,
performance graphs, and switching waveforms for
this circuit.
14
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
µF
µF
µF
kΩ
µF
µ
µF
10 kΩ
µF
µF
µF
20 kΩ
10 kΩ
10 kΩ
10 kΩ
49.9 Ω
49.9 Ω
10 kΩ
2 kΩ
10 kΩ
µF
14.7 kΩ
Figure 14. 1.5-V Power Supply With Remote Sense
With an output current of 14 A, if the load is located
far from the dc/dc converter circuit, it may be ben-
eficial to include a remote sense capability. Figure 14
is an example of a power supply incorporating active
differential remote sensing. As the TPS54010 only
has a positive VSENSE input, this circuit compen-
sates for voltage drops in both the output voltage rail
and the return (GND). The difference amplifier of U2
forces the output of the TPS54010 to generate an
output voltage that maintains a constant 1.5-V differ-
ence
between
+1.5V_REMOTE_SENSE
and
-1.5V_REMOTE_SENSE.
15
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
3.6 V
100 nF
330 µF
10 µF
10 µF
C17
1 µF
100 nF
0.047 µF
1 µF
10 kΩ
0.68 µH
0.047 µF
100 µF
100 µF
0.1 µF
2.4 kΩ
422 Ω
10 kΩ
14.7 kΩ
Figure 15. 2.5 V to 1.5 V Power Supply with Charge Pump
If a suitable 3-V to 4-V source is not available for the VIN supply, a charge pump may be used to boost the PVIN
voltage. In this circuit, the charge pump is used to boost a 2.5-V source to a nominal 3.6 V.
16
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
PERFORMANCE GRAPHS
The performance data for Figure 16 through Figure 24 are for the circuit in Figure 12. Conditions are PVIN = 2.5
V, VIN = 3.3 V, VO = 1.5 V, fs = 700 kHz, and IO = 7 A, TA = 25°C, unless otherwise specified.
MEASURED LOOP RESPONSE
LOAD REGULATION
vs
OUTPUT CURRENT
LINE REGULATION
vs
INPUT VOLTAGE
vs
FREQUENCY
0.3
0.25
0.2
60
40
180
0.5
0.4
0.3
0.2
0.1
Phase
120
I
I
= 0A
O
O
3.3 V
0.15
0.1
20
0
60
2.5 V
Gain
0.05
0
= 7A
0
0
-0.05
-0.1
-0.15
-0.2
-0.25
-0.3
2.2 V
-0.1
I
= 14A
O
-20
-40
-60
-60
-120
-180
-0.2
-0.3
-0.4
-0.5
4.0 V
100
1 k
10 k
100 k
1 M
0
2
4
6
8
10 12 14 16
2.5
3.5
2
3
4
I
- Output - A
f - Frequency - Hz
O
PVIN - V
Figure 16.
Figure 17.
Figure 18.
EFFICIENCY
vs
OUTPUT CURRENT
INPUT RIPPLE VOLTAGE
OUTPUT VOLTAGE RIPPLE
100
95
90
85
80
75
70
65
60
55
50
V
= 20 mV/div (ac coupled)
O(RIPPLE)
PVIN(RIPPLE) = 100 mV/div (ac coupled)
2.2 V
3.3 V
2.5 V
4.0 V
I
= 14 A
V(PH ) = 1 V/div
I
= 14 A
V(PH) = 1 V/div
O
O
0
2
4
6
8
10 12 14 16
Time = 500 nsec/div
Time = 500 nsec/div
I
- Output - A
O
Figure 19.
Figure 20.
Figure 21.
START-UP WAVEFORM
OUTPUT VOLTAGE RELATIVE
TO ENABLE
START-UP WAVEFORM
OUTPUT VOLTAGE RELATIVE
TO VIN
LOAD TRANSIENT RESPONSE
VIN = 1 V/div
V
= 1 V/div
(SS/ENA)
V
= 50 mV/div (ac coupled)
O
I
= 5 A/div
O
V
= 1 V/div
O
V
= 1 V/div
O
Time = 10 msec/div
Time = 200 msec/div
Time = 10 msec/div
Figure 22.
Figure 23.
Figure 24.
17
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
PERFORMANCE GRAPHS
The performance data for Figure 25 through Figure 34 are for the circuit in Figure 13. Conditions are PVIN = 2.5
V, VIN = 3.3 V, VO = 1.5 V, fs = 700 kHz, and IO = 7 A, TA = 25°C, unless otherwise specified.
FREE-AIR TEMPERATURE
vs
MAXIMUM OUTPUT CURRENT
MEASURED LOOP RESPONSE
LOAD REGULATION
vs
OUTPUT CURRENT
vs
FREQUENCY
60
40
180
125
115
105
95
0.5
0.4
0.3
0.2
0.1
V
= 1.5 V,
O
Phase
PVIN = V = 3.3 V,
I
120
T
J
= 125°C
3.3 V
20
0
60
85
2.5 V
Gain
75
0
0
65
2.2 V
-0.1
55
-20
-60
-0.2
-0.3
-0.4
-0.5
4.0 V
45
Safe Operating Area
-40
-60
-120
-180
35
25
15
100
1 k
10 k
100 k
1 M
0
2
4
6
8
10 12 14 16
- Output Current - A
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
f - Frequency - Hz
I
O
I
− Output Current − A
O
Note: Figure 25 applies to the application circuit
(Figure 13) installed on a 3 inch x 3 inch x 0.062 inch
four-layer PCB.
Figure 25.
Figure 26.
Figure 27.
LINE REGULATION
EFFICIENCY
vs
OUTPUT CURRENT
vs
PVIN
INPUT RIPPLE VOLTAGE
0.3
100
95
90
85
80
75
70
65
60
55
50
PVIN(RIPPLE) = 100 mV/div (ac coupled)
2.2 V
0.25
0.2
0.15
0.1
3.3 V
I
I
= 0A
O
O
2.5 V
0.05
0
= 7A
4.0 V
-0.05
-0.1
-0.15
-0.2
-0.25
-0.3
I
= 14A
O
I
= 14 A
V
= 1 V/div
O
(PH)
2.5
3.5
0
2
4
6
8
10 12 14 16
2
3
4
Time = 500 nsec/div
PVIN - V
I
- Output Current - A
O
Figure 28.
Figure 29.
Figure 30.
18
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
PERFORMANCE GRAPHS (continued)
START-UP WAVEFORM
OUTPUT VOLTAGE RELATIVE
TO ENABLE
OUTPUT VOLTAGE RIPPLE
LOAD TRANSIENT RESPONSE
V
= 1 V/div
V
= 100 mV/div (ac coupled)
(SS/ENA)
O
V
= 10 mV/div (ac coupled)
O(RIPPLE)
I
= 5 A/div
O
V
= 1 V/div
O
I
= 14 A
V
= 1 V/div
O
(PH )
Time = 500 nsec/div
Time = 200 msec/div
Time = 10 msec/div
Figure 31.
Figure 32.
Figure 33.
START-UP WAVEFORM
OUTPUT VOLTAGE RELATIVE
TO ENABLE
VIN = 1 V/div
V
= 1 V/div
O
Time = 10 msec/div
Figure 34.
NOTE:
DETAILED DESCRIPTION
If the PVIN input is controlled via a fast bus switch, it
results in a hard-start condition and may damage the
load (i.e., whatever is connected to the regulated
output of the TPS54010). If a power-good signal is
not available from the 2.5-V power supply, one can
be generated using a comparator and hold the
SS/ENA pin low until the 2.5-V bus power is good. An
example of this is shown in Figure 35. This circuit can
also be used to prevent the TPS54010 output from
following the PVIN input while the PVIN power supply
is ramping up.
OPERATING WITH SEPARATE PVIN
The TPS54010 is designed to operate with the power
stage (high-side and low-side MOSFETs) and the
PVIN input connected to a separate power source
from VIN. The primary intended application has VIN
connected to a 3.3-V bus and PVIN connected to a
2.5-V bus. The TPS54010 cannot be damaged by
any sequencing of these voltages. However, the
UVLO (see detailed description section) is referenced
to the VIN input. Some conditions may cause unde-
sirable operation.
If PVIN is absent when the VIN input is high, the
slow-start is released, and the PWM circuit goes to
maximum duty factor. When the PVIN input ramps
up, the output of the TPS54010 follows the PVIN
input until enough voltage is present to regulate to the
proper output value.
19
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
the UVLO comparator, and a 2.5-ms rising and falling
edge deglitch circuit reduce the likelihood of shutting
the device down due to noise on VIN. UVLO is with
respect to VIN and not PVIN, see the Application
Information section.
100 kΩ
VIN
10 kΩ
PVIN
VBIAS
+
−
SS/ENA
1/2 LM293
10 kΩ
27.4 kΩ
SLOW-START/ENABLE (SS/ENA)
The slow-start/enable pin provides two functions.
First, the pin acts as an enable (shutdown) control by
keeping the device turned off until the voltage ex-
ceeds the start threshold voltage of approximately
1.2 V. When SS/ENA exceeds the enable threshold,
device start-up begins. The reference voltage fed to
the error amplifier is linearly ramped up from 0 V to
0.891 V in 3.35 ms. Similarly, the converter output
voltage reaches regulation in approximately 3.35 ms.
Voltage hysteresis and a 2.5-ms falling edge deglitch
circuit reduce the likelihood of triggering the enable
due to noise.
Figure 35. Undervoltage Lockout Circuit for PVIN
Using Open-Collector or Open-Drain Comparator
PVIN and VIN can be tied together for 3.3-V bus
operation.
MAXIMUM OUTPUT VOLTAGE
The maximum attainable output voltage is limited by
the minimum voltage at the PVIN pin. Nominal
maximum duty cycle is limited to 90% in the
TPS54010; so, maximum output voltage is:
V
PVIN
0.9
The second function of the SS/ENA pin provides an
external means of extending the slow-start time with
a low-value capacitor connected between SS/ENA
and AGND.
O(max)
(min)
(24)
Care must be taken while operating when nominal
conditions cause duty cycles near 90%. Load transi-
ents can require momentary increases in duty cycle.
If the required duty cycle exceeds 90%, the output
may fall out of regulation.
Adding a capacitor to the SS/ENA pin has two effects
on start-up. First, a delay occurs between release of
the SS/ENA pin and start-up of the output. The delay
is proportional to the slow-start capacitor value and
lasts until the SS/ENA pin reaches the enable
threshold. The start-up delay is approximately:
GROUNDING AND PowerPAD LAYOUT
The TPS54010 has two internal grounds (analog and
power). Inside the TPS54010, the analog ground ties
to all of the noise-sensitive signals, whereas the
power ground ties to the noisier power signals. The
PowerPAD must be tied directly to AGND. Noise
injected between the two grounds can degrade the
performance of the TPS54010, particularly at higher
output currents. However, ground noise on an analog
ground plane can also cause problems with some of
the control and bias signals. For these reasons,
separate analog and power ground planes are rec-
ommended. These two planes must tie together
directly at the IC to reduce noise between the two
grounds. The only components that must tie directly
to the power ground plane are the input capacitor, the
output capacitor, the input voltage decoupling capaci-
tor, and the PGND pins of the TPS54010.
1.2 V
t
+ C
d
(SS)
5 mA
(25)
Second, as the output becomes active, a brief
ramp-up at the internal slow-start rate may be ob-
served before the externally set slow-start rate takes
control and the output rises at a rate proportional to
the slow-start capacitor. The slow-start time set by
the capacitor is approximately:
0.7 V
t
+ C
(SS)
(SS)
5 mA
(26)
The actual slow-start time is likely to be less than the
above approximation due to the brief ramp-up at the
internal rate.
VBIAS REGULATOR (VBIAS)
UNDERVOLTAGE LOCKOUT (UVLO)
The VBIAS regulator provides internal analog and
digital blocks with a stable supply voltage over
variations in junction temperature and input voltage. A
high-quality, low-ESR, ceramic bypass capacitor is
required on the VBIAS pin. X7R or X5R grade
dielectrics are recommended because their values
are more stable over temperature. The bypass ca-
pacitor must be placed close to the VBIAS pin and
returned to AGND.
The TPS54010 incorporates an undervoltage-lockout
circuit to keep the device disabled when the input
voltage (VIN) is insufficient. During power up, internal
circuits are held inactive until VIN exceeds the
nominal UVLO threshold voltage of 2.95 V. Once the
UVLO start threshold is reached, device start-up
begins. The device operates until VIN falls below the
nominal UVLO stop threshold of 2.8 V. Hysteresis in
20
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
External loading on VBIAS is allowed, with the
caution that internal circuits require a minimum
VBIAS of 2.7 V, and external loads on VBIAS with ac
or digital-switching noise may degrade performance.
The VBIAS pin may be useful as a reference voltage
for external circuits. VBIAS is derived from the VIN
pin; see the functional block diagram of this data
sheet.
During this period, the PWM ramp discharges rapidly
to its valley voltage. When the ramp begins to charge
back up, the low-side FET turns off and high-side
FET turns on. As the PWM ramp voltage exceeds the
error amplifier output voltage, the PWM comparator
resets the latch, thus turning off the high-side FET
and turning on the low-side FET. The low-side FET
remains on until the next oscillator pulse discharges
the PWM ramp. During transient conditions, the error
amplifier output could be below the PWM ramp valley
voltage or above the PWM peak voltage. If the error
amplifier is high, the PWM latch is never reset, and
the high-side FET remains on until the oscillator pulse
signals the control logic to turn the high-side FET off
and the low-side FET on. The device operates at its
maximum duty cycle until the output voltage rises to
the regulation set-point, setting VSENSE to approxi-
mately the same voltage as VREF. If the error
amplifier output is low, the PWM latch is continually
reset and the high-side FET does not turn on. The
low-side FET remains on until the VSENSE voltage
VOLTAGE REFERENCE
The voltage reference system produces a precise Vref
signal by scaling the output of a temperature stable
bandgap circuit. During manufacture, the bandgap
and scaling circuits are trimmed to produce 0.891 V
at the output of the error amplifier, with the amplifier
connected as a voltage follower. The trim procedure
adds to the high-precision regulation of the
TPS54010, because it cancels offset errors in the
scale and error amplifier circuits.
OSCILLATOR AND PWM RAMP
decreases to
a
range that allows the PWM
comparator to change states. The TPS54010 is
capable of sinking current continuously until the
output reaches the regulation set-point.
The oscillator frequency is set to an internally fixed
value of 350 kHz. The oscillator frequency can be
externally adjusted from 280 to 700 kHz by con-
necting a resistor between the RT pin to ground. The
switching frequency is approximated by the following
equation, where R is the resistance from RT to
AGND:
If the current limit comparator trips for longer than
100 ns, the PWM latch resets before the PWM ramp
exceeds the error amplifier output. The high-side FET
turns off and low-side FET turns on to decrease the
energy in the output inductor and consequently the
output current. This process is repeated each cycle in
which the current limit comparator is tripped.
100 kW
Switching Frequency +
500 [kHz]
R
(27)
ERROR AMPLIFIER
DEAD-TIME CONTROL AND MOSFET
DRIVERS
The high-performance, wide bandwidth, voltage error
amplifier sets the TPS54010 apart from most dc/dc
converters. The user is given the flexibility to use a
wide range of output L and C filter components to suit
the particular application needs. Type-2 or Type-3
compensation can be employed using external com-
pensation components.
Adaptive dead-time control prevents shoot-through
current from flowing in both N-channel power
MOSFETs during the switching transitions by actively
controlling the turn-on times of the MOSFET drivers.
The high-side driver does not turn on until the voltage
at the gate of the low-side FET is below 2 V. While
the low-side driver does not turn on until the voltage
at the gate of the high-side MOSFET is below 2 V.
PWM CONTROL
Signals from the error amplifier output, oscillator, and
current limit circuit are processed by the PWM control
logic. Referring to the internal block diagram, the
control logic includes the PWM comparator, OR gate,
PWM latch, and portions of the adaptive dead-time
and control-logic block. During steady-state operation
below the current limit threshold, the PWM
comparator output and oscillator pulse train alter-
nately reset and set the PWM latch. Once the PWM
latch is set, the low-side FET remains on for a
minimum duration set by the oscillator pulse width.
The high-side and low-side drivers are designed with
300-mA source and sink capability to quickly drive the
power MOSFETs gates. The low-side driver is sup-
plied from VIN, whereas the high-side driver is
supplied from the BOOT pin. A bootstrap circuit uses
an external BOOT capacitor and an internal 2.5-Ω
bootstrap switch connected between the VIN and
BOOT pins. The integrated bootstrap switch improves
drive efficiency and reduces external component
count.
21
TPS54010
www.ti.com
SLVS509A–MAY 2004–REVISED AUGUST 2004
OVERCURRENT PROTECTION
Thermal shutdown provides protection when an over-
load condition is sustained for several milliseconds.
With a persistent fault condition, the device cycles
continuously; starting up by control of the slow-start
circuit, heating up due to the fault condition, and then
shutting down on reaching the thermal shutdown trip
point. This sequence repeats until the fault condition
is removed.
The cycle-by-cycle current limiting is achieved by
sensing the current flowing through the high-side
MOSFET and comparing this signal to a preset
overcurrent threshold. The high-side MOSFET is
turned off within 200 ns of reaching the current limit
threshold. A 100-ns leading-edge blanking circuit
prevents current limit false tripping. Current limit
detection occurs only when current flows from VIN to
PH when sourcing current to the output filter. Load
protection during current sink operation is provided by
thermal shutdown.
POWER-GOOD (PWRGD)
The power-good circuit monitors for undervoltage
conditions on VSENSE. If the voltage on VSENSE is
10% below the reference voltage, the open-drain
PWRGD output is pulled low. PWRGD is also pulled
low if VIN is less than the UVLO threshold or SS/ENA
is low. When VIN, UVLO threshold, SS/ENA, enable
THERMAL SHUTDOWN
The device uses the thermal shutdown to turn off the
power MOSFETs and disable the controller if the
junction temperature exceeds 150°C. The device is
released from shutdown automatically when the junc-
tion temperature decreases to 10°C below the ther-
mal shutdown trip point, and starts up under control
of the slow-start circuit.
threshold, and VSENSE
> 90% of Vref, the
open-drain output of the PWRGD pin is high. A
hysteresis voltage equal to 3% of Vref and a 35-µs
falling-edge deglitch circuit prevent tripping of the
power-good comparator due to high-frequency noise.
22
THERMAL PAD MECHANICAL DATA
www.ti.com
PWP (R-PDSO-G28)
THERMAL INFORMATION
This PowerPAD™ package incorporates an exposed thermal pad that is designed to be attached directly to an
external heatsink. When the thermal pad is soldered directly to the printed circuit board (PCB), the PCB can be
used as a heatsink. In addition, through the use of thermal vias, the thermal pad can be attached directly to a
ground plane or special heatsink structure designed into the PCB. This design optimizes the heat transfer from
the integrated circuit (IC).
For additional information on the PowerPAD package and how to take advantage of its heat dissipating abilities,
refer to Technical Brief, PowerPAD Thermally Enhanced Package, Texas Instruments Literature No. SLMA002
and Application Brief, PowerPAD Made Easy, Texas Instruments Literature No. SLMA004. Both documents are
available at www.ti.com.
The exposed thermal pad dimensions for this package are shown in the following illustration.
28
15
Exposed Thermal Pad
2,35
1,60
1
14
6,46
5,35
Top View
NOTE: All linear dimensions are in millimeters
PPTD032
Exposed Thermal Pad Dimensions
PowerPAD is a trademark of Texas Instruments
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enhancements, improvements, and other changes to its products and services at any time and to discontinue
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TI warrants performance of its hardware products to the specifications applicable at the time of sale in
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