TPS546D24SRVFR_技术文档

TPS546D24S

ZHCSQY3 –MARCH 2023

TPS546D24S 具有PMBus^®和扩展写保护功能且最多可堆叠4 个的2.95V 至

16V、40A SWIFT^™同步降压转换器

1 特性

3 说明

• 集成扩展安全功能

• 支持双电源：2.95V 至16V PVIN；2.95V 至18V

AVIN（4V_INVDD5 开关电压）

TPS546D24S 是一款高度集成的非隔离式直流/直流转

换器，它通过添加制造商特定的 PMBus 命令以及扩展

写保护和密钥，在 TPS546D24A 的基础上进行了扩

展。与标准写保护命令相比，此功能能够以更高的分辨

率限制写入功能，从而提高了安全性，有助于防止恶意

访问 PMBus。TPS546D24S 具有较高的工作频率和

40A 的电流输出，并采用 7mm × 5mm 封装。可将两

个、三个和四个 TPS546D24S 器件互连，在单个输出

上提供最高 160A 的电流。该器件可通过 VDD5 引

脚，利用 5V 的外部电源对内部的 5V LDO 进行过驱

动，从而提高效率并降低转换器的功耗。

• 集成4.5mΩ/0.9mΩ MOSFET

• 具有可选内部补偿的平均电流模式控制

• 可堆叠2 个、3 个、4 个，电流共享高达160A，每

个输出可支持单个地址

• 通过引脚搭接的可选输出电压范围为0.5V 至

5.5V，使用PMBus VOUT_COMMAND 的电压范

围为0.25V 至5.5V

• 广泛的PMBus 命令集，可遥测V_OUT、I_OUT和内部

裸片温度

• 通过内部反馈分压器实现差分遥感，可检测到小于

1% 的V_OUT误差，T_J为–40°C 至+150°C

• 通过PMBus 实现AVS 和裕量调节

• 采用MSEL 引脚，引脚编程PMBus 默认值

• 12 种介于225kHz 和1.5MHz 之间的可选开关频率

（8 个引脚搭接选项）

TPS546D24S 使用专有的固定频率电流模式控制，具

有输入前馈和可选的内部补偿元件，可在各种输出电容

下更大限度减小尺寸和提高稳定性。

PMBus^®接口具有 1MHz 时钟支持，为转换器配置提

供了便捷且标准化的数字接口，并且实现了对输出电

压、输出电流和内部裸片温度等关键参数的监控。对故

障状况的响应可设置为重新启动、锁存或忽略，具体取

决于系统要求。堆叠器件之间的反向通道通信使得所有

TPS546D24S 转换器能够为单个输出轨供电，共享一

个地址，从而简化系统软件/固件设计。也可通过 BOM

选择在不进行 PMBus 通信的情况下，配置输出电压、

开关频率、软启动时间和过流故障限制等关键参数，以

支持无程序加电。

• 频率同步输入/同步输出

• 支持预偏置输出

• 7mm × 5mm × 1.5mm、40 引脚QFN

• 与TPS546D24A 直接兼容

• 使用TPS546D24S 并借助WEBENCH^®Power

Designer 创建定制设计方案

2 应用

封装信息

封装⁽¹⁾

• 数据中心交换机、机架式服务器

• 有源天线系统、远程射频和基带单元

• 自动化测试设备、CT、PET 和MRI

• ASIC、SoC、FPGA、DSP 内核和I/O 电压

V_IN

封装尺寸（标称值）

器件型号

RVF（LQFN-CLIP，

40）

TPS546D24S

7.00mm × 5.00mm

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附

录。

BP1V5

DRTN

VOSNS

GOSNS/FLWR

BOOT

MSEL1

MSEL2

ADRSEL

VSEL

V_OUT

TPS546D24S

SW

VDD5

PGND

AGND

To Loop Followers

To PMBus

简化版应用

本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问

www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。

English Data Sheet: SLUSF26

TPS546D24S

ZHCSQY3 –MARCH 2023

www.ti.com.cn

Table of Contents

7.6 Register Maps...........................................................47

8 Application and Implementation................................155

8.1 Application Information........................................... 155

8.2 Typical Application.................................................. 155

8.3 Two-Phase Application........................................... 165

8.4 Four-Phase Application...........................................169

8.5 Power Supply Recommendations...........................170

8.6 Layout..................................................................... 170

9 Device and Documentation Support..........................173

9.1 Device Support....................................................... 173

9.2 Documentation Support.......................................... 173

9.3 接收文档更新通知................................................... 173

9.4 支持资源..................................................................173

9.5 Trademarks.............................................................173

9.6 静电放电警告.......................................................... 174

9.7 术语表..................................................................... 174

10 Mechanical, Packaging, and Orderable

1 特性................................................................................... 1

2 应用................................................................................... 1

3 说明................................................................................... 1

4 Revision History.............................................................. 2

5 Pin Configuration and Functions...................................3

6 Specifications.................................................................. 6

6.1 Absolute Maximum Ratings ....................................... 6

6.2 ESD Ratings .............................................................. 6

6.3 Recommended Operating Conditions ........................6

6.4 Thermal Information ...................................................6

6.5 Electrical Characteristics ............................................7

6.6 Typical Characteristics..............................................15

7 Detailed Description......................................................19

7.1 Overview...................................................................19

7.2 Functional Block Diagram.........................................19

7.3 Feature Description...................................................20

7.4 Device Functional Modes..........................................35

7.5 Programming............................................................ 36

Information.................................................................. 175

4 Revision History

注：以前版本的页码可能与当前版本的页码不同

DATE

REVISION

NOTES

March 2023

*

Initial Release

2

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English Data Sheet: SLUSF26

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5 Pin Configuration and Functions

PGD/RST_B

PMB_DATA

PMB_CLK

BP1V5

DRTN

1

32

31

30

29

28

27

26

25

24

23

22

21

MSEL1

ADRSEL

VSEL

2

3

4

MSEL2

VDD5

EN/UVLO

AVIN

5

SMB_ALRT

BOOT

6

Thermal

Pad

7

SW

8

PVIN

SW

9

PVIN

SW

10

11

12

PVIN

SW

PVIN

SW

PVIN

Not to scale

图5-1. 40-Pin LQFN-CLIP with Exposed Thermal Pad RVF Package (Top View)

表5-1. Pin Functions

I/O

DESCRIPTION

NO.

NAME

Open-drain power good or (21h) VOUT_COMMAND RESET#. As determined by user-programmable

RESET# bit in (EDh) MFR_SPECIFIC_29 (MISC_OPTIONS). The default pin function is an open-drain

power-good indicator. When configured as RESET#, an internal pullup can be enabled or disabled by the

PULLUP# bit in (EDh) MFR_SPECIFIC_29 (MISC_OPTIONS).

1

PGD/RST_B

I/O

2

3

PMB_DATA

PMB_CLK

I/O PMBus DATA pin. See Current PMBus Specifications.

I

PMBus CLK pin. See Current PMBus Specifications.

Output of the 1.5-V internal regulator. This regulator powers the digital circuitry and must be bypassed

with a minimum of 1 µF to DRTN with an X5R or better ceramic capacitor rated for a minimum of 6 V.

BP1V5 is not designed to power external circuit.

4

BP1V5

O

Digital bypass return for bypass capacitor for BP1V5. Internally connected to AGND. Do not connect to

PGND or AGND.

5

6

DRTN

—

SMB_ALRT

O

SMBus alert pin. See SMBus specification.

Bootstrap pin for the internal flying high side driver. Connect a typical 100-nF X5R or better ceramic

capacitor rated for a minimum of 10 V from this pin to SW. To reduce the voltage spike at SW, an optional

BOOT resistor of up to 8 Ωcan be placed in series with the BOOT capacitor to slow down turn-on of the

high-side FET.

7

BOOT

I

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表5-1. Pin Functions (continued)

I/O

DESCRIPTION

NO.

8

NAME

9

Switched power output of the device. Connect the output averaging filter and bootstrap to this group of

pins.

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

SW

I/O

PGND

Power stage ground return. These pins are internally connected to the thermal pad.

—

Input power to the power stage. Low-impedance bypassing of these pins to PGND is critical. PVIN to

PGND must be bypassed with X5R or better ceramic capacitors rated for at least 1.5x the maximum

PVIN voltage. In addition, a minimum of one 0402 2.2-nF - 10-nF X7R or better ceramic capacitance

rated for at least 1.5x the maximum PVIN voltage must placed as close to the PVIN and PGND pins or

under the PVIN pins to reduce the high-frequency bypass impedance.

PVIN

AVIN

I

Input power to the controller. Bypass with a minimum 1-µF X5R or better ceramic capacitor rated for at

least 1.5x the maximum AVIN voltage to AGND. If AVIN is connected to the same input as PVIN or

VDD5, a minimum 10-µs R-C filter between PVIN or VDD5 and AVIN is recommended to reduce

switching noise on AVIN.

26

Enable switching as the PMBus CONTROL pin. EN/UVLO can also be connected to a resistor divider to

program input voltage UVLO.

27

28

EN/UVLO

VDD5

I

Output of the 5-V internal regulator. This regulator powers the driver stage of the controller and must be

bypassed with a minimum of 4.7-µF X5R or better ceramic capacitor rated for a minimum of 10 V to

PGND at the thermal pad. Low impedance bypassing of this pin to PGND is critical.

O

Connect this pin to a resistor divider between BP1V5 and AGND for different options of soft-start time,

overcurrent fault limit,and multiphase information. See Programming MSEL2 or Programming MSEL2 for

a Loop Follower Device (GOSNS Tied to BP1V5) for a loop follower device (GOSNS tied to BP1V5) if

GOSNS is tied to BP1V5.

29

MSEL2

I

Connect this pin to a resistor divider between BP1V5 and AGND for different options of internal voltage

feedback divider and default output voltage. See Programming VSEL.

30

31

32

VSEL

ADRSEL

MSEL1

I

Connect this pin to a resistor divider between BP1V5 and AGND for different options of PMBus

addresses and frequency sync (including determination of SYNC pin as SYNCIN or SYNCOUT

function).See Programming ADRSEL.

Connect this pin to a resistor divider between BP1V5and AGND for different options of switching

frequency and internal compensation parameters. See Programming MSEL1.

The positive input of the remote sense amplifier. For a stand-alone device or the loop controller device in

a multi-phase configuration, connect VOSNS pin to the output voltage at the load. For the loop follower

device in a multi-phase configuration, the remote sense amplifier is not required for output voltage

sensing or regulation and this pin can be left floating. If used to monitor another voltage with the Phased

READ_VOUT command, VOSNS must be maintained between 0 V and 0.75 V with a <1-kΩresistor

divider due to the internal resistance to GOSNS, which is connected to BP1V5.

33

34

VOSNS

I

The negative input of the remote sense amplifier for loop controller device or must be pulled up high to

indicate loop follower. For a standalone device or the loop controller device in a multi-phase

configuration, connect the GOSNS pin to the ground at the load. For the loop follower device in a multi-

phase configuration, the GOSNS pin must be pulled up to BP1V5 to indicate the device a loop follower.

GOSNS/FLWR

Voltage sharing signal for multi-phase operation. For standalone device, the VSHARE pin must be left

floating. VSHARE can by bypassed to AGND with up to 50 pF of capacitance.

35

36

VSHARE

NC

I/O

-

Not internally connected. Connect to PGND at the thermal pad.

4

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English Data Sheet: SLUSF26

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表5-1. Pin Functions (continued)

I/O

DESCRIPTION

NO.

NAME

37

AGND

-

Analog ground return for controller. Connect the AGND pin directly to the thermal pad on the PCB board.

For frequency synchronization, can be programmed as SYNC IN or SYNC OUT pin by ADRSEL pin or

38

SYNC

I/O the (E4h) MFR_SPECIFIC_20 (SYNC_CONFIG) PMBus Command. The SYNC pin can be left floating

when not used.

39

40

BCX_CLK

BCX_DAT

I/O Clock for back-channel communications between stacked devices

I/O Data for back-channel communications between stacked devices

Package thermal pad, internally connected to PGND. The thermal pad must have adequate solder

coverage for proper operation.

Thermal pad

—

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

MIN

–0.3

–1

MAX UNIT

Input voltage

PVIN

16

19

V

PVIN, < 2-ms transient

24

V

PVIN –SW (PVIN to SW differential)

AVIN

20

V

–0.3

–1

BOOT

35

V

5.5

V

BOOT –SW (BOOT to SW differential)

EN/UVLO, VOSNS, SYNC, VSEL, MSEL1, MSEL2, ADRSEL

VSHARE, GOSNS/FLWR

Input voltage

5.5

V

1.98

5.5

V

PMB_CLK, PMB_DATA, BCX_CLK, BCX_DAT

SW

V

Output voltage

19.5

5.5

V

SW < 10-ns transient

V

–5

VDD5, SMB_ALRT, PGD/RST_B

BP1V5

V

–0.3

–40

–55

Output voltage

1.65

150

V

T_Joperating junction temperature

T_stgStorage temperature

°C

(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If

used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

6.2 ESD Ratings

VALUE

±2000

±1500

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾

Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002⁽²⁾

V_(ESD)

Electrostatic discharge

V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. .

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

2.95

NOM

12

MAX

18

UNIT

V

V_AVIN

V_PVIN

V_SW(peak)

T_J

Controller input voltage

Power stage input voltage

12

16

V

Peak Switch Node Voltage with respect to PGND

Junction temperature

18

V

150

°C

–40

6.4 Thermal Information

TPS546X24S

PQFN (RVF)

40 PINS

28.9

THERMAL METRIC⁽¹⁾

UNIT

R_θJA

R_θJC(top)

R_θJB

ψ_JT

Junction-to-ambient thermal resistance JEDEC

Junction-to-ambient thermal resistance EVM⁽²⁾

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

8.1

18.9

4.1

Junction-to-top characterization parameter

1.3

English Data Sheet: SLUSF26

6

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6.4 Thermal Information (continued)

TPS546X24S

THERMAL METRIC⁽¹⁾

PQFN (RVF)

40 PINS

4.1

UNIT

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

°C/W

ψ_JB

R_θJC(bot)

1.0

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

(2) EVM thermal resistance measured on TPS546D24SEVM-2PH. 8-layer, 2-oz Cu per layer evaluation board.

6.5 Electrical Characteristics

T_J= –40°C to 150°C, V_PVIN= V_AVIN= 12 V, f_SW= 550 kHz; zero power dissipation (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

INPUT SUPPLY

V_AVIN

Input supply voltage range

Power stage voltage range

Input operating current

2.95

16

V

V_PVIN

16

I_AVIN

Converter not switching

12.5

2.5

17 mA

AVIN UVLO

Analog input voltage UVLO

for power on reset (PMBus

communication)

enable threshold

2.7

V

V_AVINuvlo

Analog input voltage UVLO

for disable

2.09

2.3

V

Analog input voltage UVLO

hysteresis

250

mV

Delay from AVIN UVLO to

t_{delay(uvlo_PMBus)}PMBus ready to

communicate

AVIN = 3 V

8

ms

PVIN UVLO

Factory default setting

Programmable range

Resolution

2.75

0.25

2.5

2.75

–5%

2.5

15.75

5%

V

VIN_ON

Power input turn on voltage

Accuracy

Factory default setting

Programmable range

Resolution

15.5

5%

V

VIN_OFF

Power input turnoff voltage

0.25

Accuracy

–5%

ENABLE AND UVLO

EN/UVLO Voltage rising

1.05

1.1

V

threshold

V_ENuvlo

EN/UVLO Voltage falling

threshold

0.9

4.5

V_ENhys

I_ENhys

EN/UVLO Voltage hysteresis No external resistors on EN/UVLO

EN/UVLO hysteresis current V_EN/UVLO= 1.1 V

70

5.5

mV

6.5 uA

-5 nA

EN/UVLO hysteresis current V_EN/UVLO= 0.9 V

-100

REMOTE SENSE AMPLIFIER

Remote sense input

impedance

VOSNS –

GOSNS = 1V

Z_RSA

VOSNS to GOSNS

85

130

165

kΏ

GOSNS input range for

regulation accuracy ⁽¹⁾

VOSNS –GOSNS = 1V, VOUT_SCALE_LOOP ≤

0.5

V_IRNG(GOSNS)

0.05

V

–0.05

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MAX UNIT

6.5 Electrical Characteristics (continued)

T_J= –40°C to 150°C, V_PVIN= V_AVIN= 12 V, f_SW= 550 kHz; zero power dissipation (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

VOSNS input range for

regulation accuracy ⁽¹⁾

V_IRNG(VOSNS)

5.5

V

GOSNS = AGND, VOUT_SCALE_LOOP ≤0.5

–0.1

REFERENCE VOLTAGE AND ERROR AMPLIFIER

Default setting

0.4

V

V_REF

Reference voltage⁽¹⁾

Reference voltage range⁽¹⁾

Reference voltage resolution⁽¹⁾

V_OUT= 1000 mV

0.25

0.75

2 ^–12

0.992

0.492

1.490

0.994

0.494

1.492

0.995

0.495

1.493

1.008

0.508

1.510

1.006

0.506

1.508

1.005

0.505

1.507

–40°C ≤T_J≤150°C⁽²⁾

0°C ≤T_J≤125°C⁽²⁾

0°C ≤T_J≤85°C⁽²⁾

V_OUT= 500 mV

V_OUT= 1500 mV

V_OUT= 1000 mV

V_OUT= 500 mV

V_OUT= 1500 mV

V_OUT= 1000 mV

V_OUT= 500 mV

V_OUT= 1500 mV

V_OUT(ACC)

Output voltage accuracy

Progrmmable error amplifier

transonductance

25

200

µS

MHz

kΩ

G_mEA

Resolution⁽¹⁾

Four settings: 25 uS, 50 uS, 100 uS, 200 uS

25

8

Unloaded Bandwidth⁽¹⁾

Programmable parallel

resistor range

5

1.25

6.25

315

18.75

R_pEA

C_intEA

C_pEA

Resolution⁽¹⁾

5

1.25

6.25

Programmable integrator

capacitor range

pF

Resolution⁽¹⁾

Programmable parallel

capacitor range

193.75

pF

Resolution⁽¹⁾

CURRENT GM AMPLIFIER

Progrmmable current error

25

200

amplifier transonductance

µS

MHz

kΩ

G_mBUF

Resolution⁽¹⁾

Four settings: 25 µS, 50 µS, 100 µS, 200 µS

25

17

Unloaded bandwidth⁽¹⁾

Programmable parallel

resistor range

5

800

315

1600

R_pBUF

R_intBUF

C_intBUF

Resolution⁽¹⁾

5

800

Programmable integrator

resistor range⁽¹⁾

kΩ

pF

Resolution⁽¹⁾

Programmable integrator

capacitor range

0.3125

3.125

4.6875

96.875

Resolution⁽¹⁾

0.3125

3.125

Programmable parallel

capacitor range

C_pBUF

Resolution⁽¹⁾

OSCILLATOR

English Data Sheet: SLUSF26

8

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6.5 Electrical Characteristics (continued)

T_J= –40°C to 150°C, V_PVIN= V_AVIN= 12 V, f_SW= 550 kHz; zero power dissipation (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

225

500

TYP

MAX UNIT

Adjustment range⁽²⁾

Switching frequency⁽²⁾

1500

kHz

600

f_SW

550

SYNCHRONIZATION

V_IH(sync)High-level input voltage

V_IL(sync)

1.35

V

Low-level input voltage

0.8

Sync input minimum pulse

width

t_pw(sync)

f_sw= 225 kHz to 1500 kHz

200

20

ns

%

SYNC pin frequency range

from FREQUENCY_SWITCH

frequency⁽¹⁾

Δf_SYNC

–20

VDD5

–0.85V

V_OH(sync)

V_OL(sync)

t_PLL

Sync output high voltage

Sync output low voltage

PLL lock time

VDD5

0.4

V

100-μA load

2.4-mA load

Fsw = 550 kHz, SYNC clock frequency 495 kHz -

605 kHz⁽¹⁾

65

μs

Degre

e

f_sw< 1.1 MHz

9

PhaseErr

Phase interleaving error⁽⁵⁾

23

ns

f_sw≥1.1 MHz

RESET

V_IH(reset)

V_IL(reset)

High-level input voltage⁽¹⁾

Low-level input voltage

1.35

25

V

0.8

200

55

Minimum RESET_B pulse

width

t_pw(reset)

ns

kΩ

V

R_{pullup(reset)}

V_{pullup(reset)}

Internal pull-up resistance

Internal Pull-up Voltage

V_RESET= 0.8V

RESET# = 1

34

VDD5 -

0.5

I_RESET= 10 μA

VDD5 REGULATOR

Regulator output voltage

Default, I_VDD5= 10 mA

4.5

3.9

4.7

4.9

5.3

V

V_VDD5

Programmable range⁽¹⁾

Resolution

200

130

mV

V_VDD5(do)

I_VDD5SC

Regulator dropout voltage

285 mV

mA

V_AVIN–V_VDD5, V_AVIN= 4.5 V, I_VDD5= 25 mA

Regulator short-circuit

current⁽¹⁾

V_AVIN= 4.5 V

100

Enable voltage on VDD5 for

pin-strapping

V_VDD5ON(IF)

V_VDD5OFF(IF)

V_VDD5ON(SW)

V_VDD5OFF(SW)

V_VDD5UV(hyst)

2.62

2.48

2.85

V

Disable voltage on VDD5 for

pin-strapping

2.25

Switching enable voltage

upon VDD5

4.05

V

Switching disable voltage

upon VDD5

3.10

400

V

Regulator UVLO voltage

hysteresis

mV

BOOTSTRAP

V_BOOT(drop)

Bootstrap voltage drop

I_BOOT= 20 mA, VDD5 = 4.5 V

225 mV

BP1V5 REGULATOR

V_BP1V5

1.5-V regulator output voltage

1.42

1.5

1.58

V

_AVIN≥4.5 V, I_BP1V5= 5 mA

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6.5 Electrical Characteristics (continued)

T_J= –40°C to 150°C, V_PVIN= V_AVIN= 12 V, f_SW= 550 kHz; zero power dissipation (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

1.5-V regulator short-circuit

current⁽¹⁾

I_BP1V5SC

PWM

30

mA

Minimum controllable pulse

width⁽¹⁾

t_ON(min)

20

ns

t_OFF(min)

PWM Minimum off-time⁽¹⁾

Soft-start time

400

3

500

SOFT START

Factory default setting

Programmable range^{(1) (3)}

0

–10%

0

31.75 ms

15%

t_{ON_RISE}

Resolution

0.25

0

Accuracy, TON_RISE = 3 ms

Factory default setting⁽⁴⁾

Programmable range^{(1) (4)}

Resolution

127.5 ms

15%

Upper limit on the time to

power up the output

t_{ON_MAX_FLT_LT}

0.5

0

Accuracy⁽¹⁾

–10%

0

Factory default setting

Programmable range⁽¹⁾

Resolution

127.5 ms

15%

t_{ON_DELAY}

SOFT STOP

t_{OFF_FALL}

Turn-on delay

0.5

Accuracy⁽¹⁾

–10%

Factory default setting⁽³⁾

Programmable range⁽¹⁾

0.5

0.25

0

(3)

0

–10%

0

31.75 ms

15%

Soft-stop time

Turn-off delay

Resolution

Accuracy, TOFF_FALL = 1 ms

Factory default setting

Programmable range⁽¹⁾

Resolution

127.5 ms

15%

t_{OFF_DELAY}

0.5

Accuracy⁽¹⁾

–10%

POWER INPUT OVERVOLTAGE/UNDERVOLTAGE

Factory default

20

Power Input overvoltage fault

limit

V_PVINOVF

Programmable range

Resolution

6

20

V

1

Factory default

Programmable range

Resolution

2.5

Power Input undervoltage

warning limit

V_PVINUVW

2.5

15.75

0.25

POWER STAGE

V_BOOT- V_SW= 4.5 V, T_J= 25°C

V_BOOT- V_SW= 3 V, T_J= 25°C

V_VDD5= 4.5 V, T_J= 25°C

V_VDD5= 3 V, T_J= 25°C

4.5

8.0

0.9

1.4

mΩ

High-side power device on-

resistance

R_HS

Low-side power device on-

resistance

R_LS

SW internal pull-down

resistance

R_swpd

3

30

35

kΩ

Weak high-side gate drive

triggering threshold upon

PVIN rising

V_wkdr(on)

14.75

V

English Data Sheet: SLUSF26

10

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6.5 Electrical Characteristics (continued)

T_J= –40°C to 150°C, V_PVIN= V_AVIN= 12 V, f_SW= 550 kHz; zero power dissipation (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

Weak high-side gate drive

recovering threshold upon

PVIN falling

V_wkdr(off)

14.35

V

Power stage driver dead-time

t_DEAD(LtoH)

from Low-side off to High-side V_VDD5= 4.5 V, T_J= 25°C⁽¹⁾

on

6

ns

Power stage driver dead-time

t_DEAD(HtoL)

from High-side off to Low-side V_VDD5= 4.5 V, T_J= 25°C⁽¹⁾

on

CURRENT SHARING

Output current sharing

accuracy of two devices

defined as the ratio of the

current difference between

two devices to the sum of the

two

_OUT≥20 A per device⁽⁵⁾

–10%

10%

I

I_SHARE(acc)

Output current sharing

accuracy of two devices

defined as the current

difference between each

device and the average of all

devices

I_OUT< 20 A per device⁽⁵⁾

2

A

–2

Current Share Ratio between

TPS546B24S and

I_SHARE(ratio)

I_{OUT(B24S + D24S)}= 30A⁽⁵⁾

0.5

TPS546D24S

VSHARE fault trip threshold

0.1

0.2

V_VSHARE

V

VSHARE fault release

threshold

LOW-SIDE CURRENT LIMIT PROTECTION

Off time between restart

7 ×

t_{ON_RISE}

Factory default setting

attempts⁽¹⁾

t_OFF(OC)

ms

1 ×

t_{ON_RISE}

7 ×

t_{ON_RISE}

Range

Factory default setting

Programmable range

Resolution

52

IO_OC_FLT_L Output current overcurrent

8

62

MT

fault threshold

2

–20

40

A

Negative output current

overcurrent protection

threshold

I_NEGOC

Factory default setting

Programmable range

Resolution

IO_OC_WRN_L Output current overcurrent

8

62

A

MT

warning threshold

2

I_OUT= 20 A

4

8

–2

–4

Output current overcurrent

fault error

I_OC(acc)

I_OUT= 40 A⁽⁵⁾

HIGH-SIDE SHORT CIRCUIT PROTECTION

Ratio of High-side short-

circuit protection fault

threshold over Low-side

(V_BOOT–V_SW) = 4.5V, T_J= 25°C⁽⁵⁾

105%

150%

100

200%

I_HSOC

overcurrent limit

High-side current sense

blanking time

ns

POWER GOOD (PGOOD) AND OVERVOLTAGE/UNDERVOLTAGE WARNING

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MAX UNIT

6.5 Electrical Characteristics (continued)

T_J= –40°C to 150°C, V_PVIN= V_AVIN= 12 V, f_SW= 550 kHz; zero power dissipation (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

R_PGD

PGD pulldown resistance

I_PGD= 5 mA

V_PGD= 5 V

30

50

Ω

Output high open drain

leakage current into PGD pin

I_PGD(OH)

15 µA

PGD pin output low level

voltage at no supply voltage

V_PGD(OL)

0.8

V

V_AVIN= 0, I_PGD= 80 μA

Overvoltage warning

threshold (PGD threshold on

VOSNS rising)

106%

103%

110%

114%

116%

V_OVW

Factory default, at VOUT_COMMAND (VOC) = 1 V

Range

Resolution

1%

Undervoltage warning

threshold (PGD threshold on

VOSNS falling)

86%

84%

90%

94%

97%

V_UVW

Factory default, at VOUT_COMMAND (VOC) = 1 V

Range

VOC

Resolution

1%

PGD release threshold on

VOSNS rising and

undervoltage warning de-

assertion threshold

V_PGD(rise)

Factory default, at VOUT_COMMAND (VOC) = 1 V

95%

PGD threshold on VOSNS

falling and overvoltage

warning de-assertion

threshold

V_PGD(fall)

105%

115%

OUTPUT OVERVOLTAGE AND UNDERVOLTAGE FAULT PROTECTION

Factory default, at

VOUT_COMMAN

D (VOC) = 1 V

Factory default, at

VOUT_COMMAND (VOC) = 1 V

Overvoltage fault threshold

Range

111%

105%

119%

140%

Factory default, at

VOUT_COMMAN

D (VOC) = 1 V

Factory default, at

VOUT_COMMAND (VOC) = 1 V

V_OVF

Factory default, at

VOUT_COMMAN

D (VOC) = 1 V

Factory default, at

VOUT_COMMAND (VOC) = 1 V

Resolution

2.5%

85%

VOC

Factory default, at

Undervoltage fault threshold VOUT_COMMAN

D (VOC) = 1 V

Factory default, at

VOUT_COMMAND = 1.00 V

81%

60%

89%

95%

Factory default, at

VOUT_COMMAN

D = 1.00 V

Factory default, at

VOUT_COMMAND = 1.00 V

V_UVF

Range

Factory default, at

VOUT_COMMAN

D = 1.00 V

Factory default, at

VOUT_COMMAND = 1.00 V

Resolution

2.5%

1.2

Factory default, at

VOUT_COMMAN

D (VOC) = 1 V

Fixed overvoltage fault

threshold

Factory default, at

VOUT_COMMAND = 1.00 V

1.15

1.25

V_OVF(fix)OFF

V

Factory default, at

VOUT_COMMAN

D = 1.00 V

Factory default, at

VOUT_COMMAND = 1.00 V

Recovery threshold⁽¹⁾

0.4

OUTPUT VOLTAGE TRIMMING

Default Resolution of VOUT_COMMAND, Trim and

Margin, VOUT_SCALE_LOOP = 0.5

1.90

2^–12

1.95

2.00 mV

2 ^–5

V_OUTRES

Programmable range⁽¹⁾

V

English Data Sheet: SLUSF26

12

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6.5 Electrical Characteristics (continued)

T_J= –40°C to 150°C, V_PVIN= V_AVIN= 12 V, f_SW= 550 kHz; zero power dissipation (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

Factory default setting

1

mV/µs

VOUT_TRAN_

RT

Programmable range⁽¹⁾

Accuracy

0.063

15.933

Output voltage transition rate

10%

–10%

Factory default setting

Programmable range, 4 discrete settings

Factory default setting

0.5

0.8

Feedback loop scaling

factor⁽¹⁾

VOUT_SCL_LP

0.125

1

V

VOUT_SCALE_LOOP = 1 ⁽⁵⁾

0.25

0.75

1.5

3

Output voltage programmable

values

VOUT_SCALE_LOOP = 0.5

VOUT_CMD

Programmable

range

VOUT_SCALE_LOOP = 0.25⁽⁵⁾

VOUT_SCALE_LOOP =

0.125⁽⁵⁾

0.25

6

TEMPERATURE SENSE AND THERMAL SHUTDOWN

Bandgap thermal shutdown

T_SD

150

170

150

temperature⁽¹⁾

Bandgap thermal shutdown

T_HYST

25

hysteresis⁽¹⁾

Factory default setting

Internal overtemperature fault

limit⁽¹⁾

OT_FLT_LMT

Programmable range

0

160

°C

Resolution

1

Factory default setting

Programmable range

Resolution

125

Internal overtemperature

warning limit⁽¹⁾

OT_WRN_LMT

T_OT(hys)

160

25

1

Internal overtemperature

fault, warning hysteresis⁽¹⁾

Factory default setting

250 mV < V_OUT< 6 V

MEASUREMENT SYSTEM

Output voltage measurement

M_VOUT(rng)

M_VOUT(acc)

M_VOUT(lsb)

M_IOUT(rng)

M_IOUT(acc)

M_IOUT(lsb)

M_PVIN(rng)

M_PVIN(acc)

0

6

V

range⁽¹⁾

Output voltage measurement

accuracy

2%

–2%

Output voltage measurement

bit resolution⁽¹⁾

244

µV

A

Output current measurement

range⁽¹⁾

60

1.8

3

–10

–1.8

–3

Output current measurement

accuracy⁽⁵⁾

0

A

I

_OUT≤10 A, T_J= 25°C

Output current measurement

accuracy⁽⁵⁾

A

I_OUT= 20A, -40°C ≤T_J≤150°C

I_OUT= 40A, -40°C ≤T_J≤150°C

I_OUT= 20A, 0°C ≤T_J≤85°C

I_OUT= 40A, 0°C ≤T_J≤85°C

Output current measurement

accuracy⁽⁵⁾

0

4

A

–4

Output current measurement

accuracy⁽⁵⁾

0

2.5

3

A

–2.5

–3

Output current measurement

accuracy⁽⁵⁾

0

A

Output current measurement

bit resolution⁽¹⁾

2^–6

A

Input voltage measurement

range⁽¹⁾

0

20

3

V

Input voltage measurement

accuracy

4 V< PVIN < 20 V

%

–3

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ZHCSQY3 –MARCH 2023

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6.5 Electrical Characteristics (continued)

T_J= –40°C to 150°C, V_PVIN= V_AVIN= 12 V, f_SW= 550 kHz; zero power dissipation (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

Input voltage measurement

bit resolution⁽¹⁾

M_PVIN(lsb)

M_TSNS(acc)

M_TSNS(lsb)

2^–6

V

Internal temperature sense

accuracy⁽⁵⁾

3

–40°C ≤T_J≤150°C

–3

°C

Internal temperature sense bit

resolution⁽¹⁾

0.25

PMBUS INTERFACE + BCX

High-level input voltage on

V_IH(PMBUS)

PMB_CLK, PMB_DATA,

BCX_CLK, BCX_DAT

1.35

V

Low-level input voltage on

PMB_CLK, PMB_DATA,

BCX_CLK, BCX_DAT

V_IL(PMBUS)

0.8

Input high level current into

PMB_CLK, PMB_DATA

I_lH(PMBUS)

I_IL(PMBUS)

10

–10

μA

Input low level current into

PMB_CLK, PMB_DATA

Output low level votlage on

PMB_DATA, SMB_ALRT,

BCX_DAT

V_AVIN> 4.5 V, input current to PMB_DATA,

SMB_ALRT, BCX_DAT = 20 mA

V_OL(PMBUS)

0.4

10

V

Output high level open drain

leakage current into

I_OH(PMBUS)

Voltage on PMB_DATA, SMB_ALRT = 5.5 V

μA

PMB_DATA, SMB_ALRT

Output low level open drain

sinking current on

PMB_DATA, SMB_ALRT,

BCX_DAT

Voltage on PMB_DATA, SMB_ALRT, BCX_DAT =

0.4 V

I_OL(PMBUS)

20

10

mA

PMBus operating frequency

range

f_{PMBUS_CLK}

GOSNS = AGND

V_pin= 0.1V to 1.35V

–40°C to 150°C

1000 kHz

PMBUS_CLK &

C_PMBUS

PMBUS_DATA pin input

5

pF

capactiance⁽¹⁾

Number of NVM writeable

cycles⁽¹⁾

N_{WR_NVM}

1000

cycle

ms

Maximum Allowable Clock

Stretch⁽¹⁾

t_{CLK_STCH(max)}

6

(1) Specified by design. Not production tested.

(2) The parameter covers 2.95 V to 18 V of AVIN.

(3) The setting of TON_RISE and TOFF_FALL of 0 ms means the unit to bring its output voltage to the programmed regulation value of

down to 0 as quickly as possible, which results in an effective TON_RISE and TOFF_FALL time of 0.5 ms (fastest time supported).

(4) The setting of TON_MAX_FAULT_LIMIT and TOFF_MAX_WARN_LIMIT of 0 means disabling TON_MAX_FAULT and

TOFF_MAX_WARN response and reporting completely.

(5) Not production tested. Specified by correlation. AVIN = PVIN = 12 V, VOUT = 1 V f_sw= 325kHz L = 320nH

English Data Sheet: SLUSF26

14

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6.6 Typical Characteristics

V_PIN= V_AVIN= 12 V, T_A= 25°C, f_sw= 325 kHz (unless otherwise specified). Safe operating area curves were measured using

a Texas Instruments evaluation module (EVM).

105

100

95

90

85

80

75

70

65

60

55

50

105

100

95

90

85

80

75

70

65

60

55

50

Nat conv

100 LFM

200 LFM

400 LFM

Nat conv

100 LFM

200 LFM

400 LFM

10

15

20

25

Phase Current (A)

30

35

40

45

50

10

15

20

25

Phase Current (A)

30

35

40

45

50

D001

D002

V_IN= 5 V

f_SW= 325 kHz

V_OUT= 1 V

L = 300 nH

V_IN= 5 V

V_OUT= 1 V

L = 300 nH

Snubber = 1 nF + 1 Ω

R_BOOT= 0 Ω

Snubber = 1 nF + 1 Ω

R_BOOT= 0 Ω

f_SW= 550 kHz

图6-1. TPS546D24S Safe Operating Area

图6-2. TPS546D24S Safe Operating Area

105

100

95

90

85

80

75

70

65

60

55

50

100

95

90

85

80

75

70

65

60

55

50

Nat conv

100 LFM

200 LFM

400 LFM

Nat conv

100 LFM

200 LFM

400 LFM

10

15

20

25

Phase Current (A)

30

35

40

45

50

10

15

20

25

Phase Current (A)

30

35

40

45

50

D003

D004

V_IN= 12 V

V_OUT= 1 V

L = 300 nH

V_IN= 12 V

V_OUT= 1 V

L = 300 nH

Snubber = 1 nF + 1Ω

R_BOOT= 0 Ω

Snubber = 1 nF + 1 Ω

R_BOOT= 0 Ω

f_SW= 325 kHz

f_SW= 550 kHz

图6-3. TPS546D24S Safe Operating Area

图6-4. TPS546D24S Safe Operating Area

105

100

95

90

85

80

75

70

65

60

55

50

45

40

35

100

95

90

85

80

75

70

65

60

55

50

45

40

35

Nat conv

100 LFM

200 LFM

400 LFM

Nat conv

100 LFM

200 LFM

400 LFM

10

15

20

25

Phase Current (A)

30

35

40

45

50

10

15

20

25

Phase Current (A)

30

35

40

45

50

D005

D006

V_IN= 12 V

V_OUT= 3.3 V

L = 300nH

V_IN= 12 V

V_OUT= 3.3 V

L = 300 nH

Snubber = 1 nF + 1Ω

R_BOOT= 0 Ω

Snubber = 1 nF + 1 Ω

R_BOOT= 0 Ω

f_SW= 325 kHz

f_SW= 550 kHz

图6-5. TPS546D24S Safe Operating Area

图6-6. TPS546D24S Safe Operating Area

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6.6 Typical Characteristics (continued)

V_PIN= V_AVIN= 12 V, T_A= 25°C, f_sw= 325 kHz (unless otherwise specified). Safe operating area curves were measured using

a Texas Instruments evaluation module (EVM).

110

100

90

110

100

90

80

70

60

50

40

30

20

80

70

60

50

Nat conv

100 LFM

200 LFM

400 LFM

Nat conv

100 LFM

200 LFM

400 LFM

40

30

10

15

20

25

Phase Current (A)

30

35

40

45

50

10

15

20

25

Phase Current (A)

30

35

40

45

50

D007

D008

V_IN= 12 V

V_OUT= 5 V

L = 300 nH

V_IN= 12 V

V_OUT= 5 V

L = 300 nH

Snubber = 1 nF + 1 Ω

R_BOOT= 0 Ω

Snubber = 1 nF + 1 Ω

R_BOOT= 0 Ω

f_SW= 325 kHz

f_SW= 550 kHz

图6-7. TPS546D24S Safe Operating Area

图6-8. TPS546D24S Safe Operating Area

100

95

90

85

80

75

70

65

60

95

90

85

80

75

70

65

60

0.8V

1.0V

1.2V

3.3V

0.8V

1.0V

1.2V

3.3V

0

5

10

15

Load Current (A)

20

25

30

35

40

0

5

10

15

Load Current (A)

20

25

30

35

40

D009

D010

V_IN= 5 V

f_SW= 325 kHz

L = 300 nH

V_IN= 5 V

f_SW= 550 kHz

L = 300 nH

Snubber = 1 nF + 1 Ω

R_BOOT= 0 Ω

Snubber = 1 nF + 1 Ω

R_DCR= 0.15 mΩ

R_DCR= 0.15 mΩ R_BOOT= 0 Ω

图6-9. TPS546D24S Efficiency vs Output Current

图6-10. TPS546D24S Efficiency vs Output Current

100

95

90

85

80

100

95

90

85

80

75

0.8V

1.0V

1.2V

3.3V

5.0V

0.8V

1.0V

1.2V

3.3V

5.0V

70

65

60

65

60

0

5

10

15

Load Current (A)

20

25

30

35

40

0

5

10

15

Load Current (A)

20

25

30

35

40

D011

D012

V_IN= 12 V

L = 300 nH

V_IN= 12 V

L = 300 nH

Snubber = 1 nF + 1

Ω

Snubber = 1 nF + 1 Ω

R_BOOT= 0 Ω

f_SW= 325 kHz

R_DCR= 0.15 mΩ

f_SW= 550 kHz

R_DCR= 0.15 mΩ

R_BOOT= 0 Ω

图6-11. TPS546D24S Efficiency vs Output Current

图6-12. TPS546D24S Efficiency vs Output Current

16

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6.6 Typical Characteristics (continued)

V_PIN= V_AVIN= 12 V, T_A= 25°C, f_sw= 325 kHz (unless otherwise specified). Safe operating area curves were measured using

a Texas Instruments evaluation module (EVM).

9

1.65

8.5

1.55

8

1.45

7.5

1.35

1.25

1.15

1.05

0.95

0.85

7

6.5

6

5.5

5

Vgate

3.0V

4.5V

Vgate = 3.0V

Vgate = 4.5V

4.5

4

-40 -20

0

20

40

60

80 100 120 140 160

-40 -20

0

20

40

60

80 100 120 140 160

Temperature (èC)

D013

D014

图6-13. Low-Side MOSFET On-Resistance (R_DS(on)

)

图6-14. High-Side MOSFET On-Resistance (R_DS(on)

)

vs Junction Temperature

1.003

1.002

1.001

1

700

650

600

550

500

450

400

350

300

0.999

0.998

325kHz

550kHz

250

200

V_OUT= 1.00V

0.997

-40 -20

0

20

40

60

80 100 120 140 160

-40 -20

0

20

40

60

80 100 120 140 160

Temperature (èC)

D015

D016

VOUT_COMMAND = 1 V

图6-15. Output Voltage vs Junction Temperature

图6-16. Switching Frequency

vs Junction Temperature

13.8

13.6

13.4

13.2

13

4.75

4.725

4.7

12.8

12.6

12.4

12.2

12

4.675

11.8

4.65

-40 -20

0

20

40

60

80 100 120 140 160

-40 -20

0

20

40

60

80 100 120 140 160

Temperature (èC)

D017

D018

I_VDD5= 10 mA

V_PVIN= V_AVIN= 12 V

图6-17. Non-Switching Input Current (I_AVIN

)

图6-18. VDD5 Voltage vs Junction Temperature

vs Junction Temperature

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6.6 Typical Characteristics (continued)

V_PIN= V_AVIN= 12 V, T_A= 25°C, f_sw= 325 kHz (unless otherwise specified). Safe operating area curves were measured using

a Texas Instruments evaluation module (EVM).

1.55

1.525

1.5

2.9

2.85

2.8

2.75

2.7

1.475

2.65

1.45

2.6

-40 -20

0

20

40

60

80 100 120 140 160

-40 -20

0

20

40

60

80 100 120 140 160

Temperature (èC)

D023

D019

I_BP1V5= 2 mA

V_PVIN= V_AVIN= 12 V

(35h) VIN_ON = 2.75 V

图6-19. BP1V5 Voltage vs Junction Temperature

图6-20. Turnon Voltage vs Junction Temperature

2.65

1.1

2.6

2.55

2.5

1.05

1

2.45

2.4

0.95

ON

OFF

2.35

-40 -20

0.9

-40 -20

0

20

40

60

80 100 120 140 160

0

20

40

60

80 100 120 140 160

Temperature (èC)

D020

D021

图6-22. EN/UVLO Thresholds vs Junction Temperature

(36h) VIN_OFF = 2.5 V

图6-21. Turnoff Voltage vs Junction Temperature

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7 Detailed Description

7.1 Overview

The TPS546D24S uses a fixed-frequency, proprietary current-mode control. The switching frequency can be

selected from pre-set values through pin-strapping and PMBus programming. The output voltage is sensed

through a true differential remote sense amplifier and internal resistor divider, then compared to an internal

voltage reference by an error amplifier. An internal oscillator initiates the turn-on of the high-side power switch.

The error amplifier output is buffered and shared through VSHARE among stacked devices. This shared voltage

is compared to the sensed switch node current to drive a linear voltage ramp modulator with input voltage,

output voltage, and switching frequency feedforward to regulate the average switch-node current. As a

synchronous buck converter, the device normally works in continuous conduction mode (CCM) under all load

conditions. The compensation components are integrated into the TPS546D24S devices, and programmable

through the PMBus command (B1h) USER_DATA_01 (COMPENSATION_CONFIG) or with the external pin

MSEL1 to select pre-set values based on switching frequency and output LC filters.

7.2 Functional Block Diagram

SYNC

MSEL2

BP1V5

VDD5

EN/UVLO AVIN PVIN

Auto-detection/

PMBus

SYNC

_IN

Linear

Regulators

Decoder

(SS, OC, Phase

Count)

SYNC_

OUT

UVLO

PLL

BOOT

BP1V8

To

Infrastructure

Oscillator

PVIN

Driver

Control

PWM

Decoder

(Fsw, Comp)

SW

MSEL1

VSEL

Anti-Cross-

Conduction

On-Time

Generator

VDD5

MSEL2/PMBus

Pre-Bias

Decoder

(Vref, Divider

Ratio)

Soft-Start

DAC

PGND

Output Current

Sensing

IMON

AGND

To Infrastructure and

Selectable Divider Ratio

R1

VSHARE

Error Amplifier with

Internal Compensation

VOSNS

+

Fault

Management

VMON and

R2

VOUT/UV/OV

Detection

OV/UV

TMON

ADC, PMBus Interface, Back Channel

Interface, Memory

GOSNS/FLWR

RESET Vout

Die Temp

Sensing

Decoder

(Addr, PH Pos,

Det SYNC in/out)

Follower

Detection

PGD/RST_B

SMB_ALRT

PMB_DATA BCX_CLK

BCX_DAT

DRTN

PMB_CLK

ADRSEL

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7.3 Feature Description

7.3.1 Average Current-Mode Control

The TPS546D24S device uses an average current-mode control architecture with independently programmable

current error integration and voltage error integration loops. This architecture provides similar performance to

peak current-mode control without restricting the minimum on-time or minimum-off time control, allowing the gain

selection of the current loop to effectively set the slope compensation. For help selecting compensation values,

customers can use the TPS546x24S Compensation and Pin-Strap Resistor Calculator design tool.

Voltage Feed Forward and Frequency Se ng

Voltage Feed Forward

Remote Sense with Internal

Resistor Divider

Switching Frequency

Voltage Regula on Error Ampli er w/

Internal Type-II Compensator

VO_SNS

High-Bandwidth Average

Unity Gain

Current Mode Control

Ampli er w/ Internal

Compensa on

Remote

Sense Amp

Voltage Error

Amp

Sensed

GMV

+

VOUT

ꢀ VOUT err

-

S

R

Q

Icntrl

GMI

PWM

+

ꢀ IL err

+

-

Vcntrl

RVV

VREF

GND_SNS

RVI

TON

Generator

I_SNS

Current Error

Amp

CPI

Start

CZV

CPV

CZI

High-Frequency, Low Ji er

On-Time Modulator

Common Internal Ground for Regula on

PLL Synchronizable

PWM_CLK_EDGE

VSHARE

Regula on and Current Share Loop for

Stackability

图7-1. Average Current Mode Control Block Diagram

7.3.1.1 On-Time Modulator

The input voltage feedforward modulator converts the integrated current error signal, ILerr, into an inductor on-

time that provides a controlled volt-second balance across the inductor over each full switching period that

simplifies the current error integration loop design. The modulator produces a full-cycle averaged small signal

Vcntrl to dIL/dt transfer function given by 方程式1:

dI_L

VIN

dt

dV_cntrlVramp

1

L

5.5

L

=

ì

=

(1)

Thus the inductor current modulator gain is given by 方程式2:

dI_L

VIN

1

5.5

ƒ =

( )

ì

=

dV_cntrl

Vramp L ì ƒ L ì ƒ

(2)

This natural integration 1/f function allows the current loop to be compensated by the mid-band gain of the error

current integrator.

English Data Sheet: SLUSF26

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7.3.1.2 Current Error Integrator

The current error integrator adjusts the modulator control voltage to match the sensed inductor current, Isns, to

the current voltage at the VSHARE pin. The integrator is tuned through the GMI, RVI, CZI, CPI, and CZI_MUL

parameters in (B1h) USER_DATA_01 (COMPENSATION_CONFIG). Thanks to the natural integration of the 1/f

function of the current control gain, the bandwidth of the current control loop can be adjusted with the mid-band

gain of the integrator, GMI × RVI.

The current loop crossover occurs at the frequency when the full loop gain is equal to 1 according to 方程式3:

V_PVIN

1

ILOOP ƒ ì

( )

ìCSA ì

= 1

V

1.7 ì pì ƒ ìL

ramp

(3)

Solving for the mid-band gain of the current loop, you find 方程式4:

V

1.7

ramp

ILOOP_MB= GMIìRVI =

ì

ìL ì pì ƒ_coi

V_PVINCSA

(4)

While Nyquist Theorem suggests that a bandwidth of ½ f_SWis possible, inductor tolerances and phase delays in

the current sense, modulator, and H-bridge power FETs make f_SW/4 a more practical target, which simplifies the

target current loop midband gain to achieve a current loop bandwidth of f_SW/4 to 方程式5:

V

ƒ_sw

1.7

1.7ìp

4ì5.5ì6.155ì10^-3

ramp

ILOOP_MB= GMIìRVI =

ì

ìLìpì

=

ìLìƒ_sw= 39.4ìLìƒ_sw

V_PVINCSA

4

(5)

An integrator from DC to the low-frequency zero, RVI × CZI, compensates for the valley voltage of the modulator

ramp and the nominal offset of the output voltage. A high-frequency filter pole, RVI × CPI between half the

switching frequency and the switching frequency reduces high-frequency noise from VSHARE and minimizes

pulse-width jitter.

To avoid loop interactions, the integrating zero frequency must be below the voltage loop cross-over frequency,

while the high-frequency pole must be between ½ the switching frequency and the switching frequency to limit

high-frequency noise and jitter in the current loop without imposing additional phase loss in the voltage loop.

The closed loop average current mode control allows the current sense amplifier, on-time modulator, H-bridge

power FETs, and inductor to operate as a transconductance amplifier with forward gain of 1/CSA or 162.5 A/V

with a bandwidth equal to F_coi.

7.3.1.3 Voltage Error Integrator

The voltage error integrator regulates the output voltage by adjusting the current control voltage, VSHARE,

similar to any current mode control architecture. A transconductance amplifier compares the sense feedback

voltage to a programmed reference voltage to set the current control voltage VSHARE to maintain the desired

output voltage. While a regulated current source feeding an output capacitance provides a natural, stable

integrator, mid-band gain is often desired to improve the loop bandwidth and transient response.

With a transconductance set by the current sense gain, the voltage loop cross-over occurs when the full loop

gain equal 1 according to 方程式6.

1

VOUT _SCALE_LOOPì VLOOP ƒ ì

( )

ì Z_OUTƒ = 1

( )

CSA

(6)

To prevent the current integration loop bandwdith from negatively impacting the phase margin of the voltage

loop, the voltage loop must have a target bandwidth of Fcoi / 2.5. With a current mode loop of f_SW/4, the voltage

loop mid-band gain must be 方程式7:

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1

CSA

VLOOP_MB= GMV ì RVV =

ì

f

VOUT _SCALE_LOOP

’

≈

SW

Z_OUT

∆

÷

◊

10

«

(7)

An integrator pole is necessary to maintain accurate DC regulation, and the zero-frequency set by RVV × CZV

must be set below the lowest cross-over frequency with the largest output capacitor intended to be supported at

the output, but not more than 1/2 the target voltage loop crossover frequency f_cov

.

A high frequency noise pole, intended to keep switching noise out of the current loop must also be employed,

with a high-frequency pole set by RVV × CPV must be set between f_sw/4 and f_sw.

For pin programmed options of compensation components, see 表7-9.

For PMBus programming of compensation values, see (B1h) USER_DATA_01 (COMPENSATION_CONFIG).

7.3.2 Linear Regulators

The TPS546D24S devices have three internal linear regulators receiving power from AVIN and providing

suitable bias (1.5 V, 1.8 V, and 5 V) for the internal circuitry of the device. External bypass pins for VDD5 and

BP1V5 must be bypassed to their respective grounds for the converter to function properly. BP1V5 requires a

minimum of 1 μF of capacitance connected to DRTN. VDD5 requires a minimum 4.7 μF of capacitance

connected to PGND. After AVIN, 1.5-V, 1.8-V, and 5-V reach their respective UVLOs, the device initiates a

power-on reset, after which the device can be communicated with through PMBus for configuration and users

can store defaults to the NVM.

The VDD5 has internally fixed undervoltage lockout of 3.9 V (typical) to enable power-stage conversion. The

VDD5 regulator can also be fed by external supply to reduce internal power dissipation and improve efficiency by

eliminating the loss in the internal LDO, or to allow operation with AVIN less than 4 V. The external supply must

be higher voltage than the LDO regulation voltage programmed by (B5h) USER_DATA_05

(POWER_STAGE_CONFIG).

Place bypass capacitors as close as possible to the device pins, with a minimum return loop back to their

respective ground. Keep the return loop away from fast switching voltage and the main current path — see the

layout for details. Poor bypassing can degrade the performance of the regulator.

The use of the internal regulators to power other circuits is not recommended because the loads placed on the

regulators can adversely affect operation of the controller.

7.3.3 AVIN and PVIN Pins

The device allows for a variety of applications by using the AVIN and PVIN pins together or separately. The AVIN

pin voltage supplies the internal control circuits of the device. The PVIN pin voltage provides the input voltage to

the switching power stage. When connected to a single supply, the input voltage for AVIN and PVIN can range

from 4 V to 16 V. If the PVIN is connected to separate supply from AVIN, the PVIN voltage can be 2.95 V to 16 V,

and AVIN has to meet 4-V minimum and 18-V maximum to drive the control and driver. If AVIN is connected to

the same supply as PVIN or VDD5, TI recommends a minimum 10-µs R-C filter with a 1-Ωto 10-Ωresistor and

AVIN bypass capacitor between AVIN and PVIN to reduce PVIN switching noise on the AVIN input.

English Data Sheet: SLUSF26

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2.95 V œ 16 V

PVIN

VDD5

PGND

4.25 V œ 18 V

AVIN

AGND

图7-2. TPS546D24S Separate PVIN and AVIN Connections

2.95 V œ 16 V

PVIN

VDD5

PGND

4 V œ 5.25 V

AVIN

AGND

图7-3. TPS546D24S Separate PVIN and AVIN Connections with VDD5

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2.95 V œ 16 V

PVIN

4.75 V œ 5.25 V

VDD5

PGND

2.95 V œ 18 V

or PVIN

AVIN

AGND

图7-4. TPS546D24S Separate PVIN, AVIN, and VDD5 Connections

7.3.4 Input Undervoltage Lockout (UVLO)

The TPS546D24S provides four independent UVLO functions for the broadest range of flexibility in start-up

control. While only the fixed AVIN UVLO is required to enable PMBus connectivity as well as VOUT and

TEMPERATURE monitoring, all four UVLO functions must be met before switching can be enabled.

7.3.4.1 Fixed AVIN UVLO

The TPS546D24S has internally fixed UVLO of 2.5 V (typical) on AVIN to enable the digital core and initiate

power on reset, including pin detection. The off-threshold on AVIN is 2.3 V (typical).

7.3.4.2 Fixed VDD5 UVLO

The TPS546D24S has an internally fixed UVLO of 3.9 V (typical) on VDD5 to enable drivers and output voltage

conversion. The off-threshold on VDD5 is 3.5 V.

7.3.4.3 Programmable PVIN UVLO

Two PMBus commands ((35h) VIN_ON and (36h) VIN_OFF) allow the user to set PVIN voltage turn-on and turn-

off thresholds independently, with 0.25-V resolution from 2.75 V to 15.75 V (6-bit) for (35h) VIN_ON and from 2.5

V to 15.5 V (6-bit) for (36h) VIN_OFF.

备注

If (36h) VIN_OFF is programmed higher than (35h) VIN_ON, the TPS546D24S rapidly switches

between enabled and disabled while PVIN remains below (36h) VIN_OFF. Propagation delays

between enable and disable can result in the converter starting (61h) TON_RISE and (65h)

TOFF_FALL in such conditions.

7.3.4.4 EN/UVLO Pin

The TPS546D24S also offers a precise threshold and hysteresis current source on the EN/UVLO pin so that it

can be used to program an additional UVLO to any external voltage greater than 1.05 V (typ.), including AVIN,

PVIN, or VDD5. For an added level of flexibility, the EN/UVLO pin can be disabled or its logic inverted through

the PMBUS Command (02h) ON_OFF_CONFIG, which allows the pin to be connected to AGND to ensure the

output is not enabled until PMBus programming has been completed.

English Data Sheet: SLUSF26

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PVIN

I_hys

EN/UVLO

CNTRL

AGND

图7-5. TPS546D24S UVLO Voltage Divider

7.3.5 Start-Up and Shutdown

The start-up and shutdown of the device is controlled by several PMBus programmable values including:

• (01h) OPERATION

• (02h) ON_OFF_CONFIG

• (60h) TON_DELAY

• (61h) TON_RISE

• (64h) TOFF_DELAY

• (65h) TOFF_FALL

With the default (02h) ON_OFF_CONFIG settings, the timing is as shown in 图 7-6. See the Supported PMBus

Commands for full details on the implementation.

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CNTRL

VDD5_OK

PVIN_OK

VOUT

TON_DELAY

TON_RISE

TOFF_DELAY

TOFF_FALL

图7-6. TPS546D24S Start-up and Shutdown

备注

The TPS546D24S requires time between the AVIN and VDD5 reaching their UVLO levels for pin-

detection and PMBus Communication and valid sensing of EN/UVLO and PVIN_OK. After AVIN and

VDD5 exceed their lower UVLO thresholds (2.9-V typ.), the TPS546D24S starts its power-on-reset,

self-calibration, and pin-detection. This time delay, t_{delay(uvlo_PMBus)}(8 ms typical) must be complete

before PVIN_OK or EN/UVLO sensing is enabled.

If VDD5_{PS_ON}, PVIN_OK, and EN/UVLO are above their thresholds before the end of t_{delay(uvlo_PMBus)}

,

(60h) TON_DELAY starts after t_{delay(uvlo_PMBus)}completes.

If VDD5_{PS_ON}, PVIN_OK, or EN/UVLO are below their thresholds when t_{delay(uvlo_PMBus)}completes,

(60h) TON_DELAY starts when VDD5_OK, PVIN_OK, and EN/UVLO are all above their thresholds.

7.3.6 Differential Sense Amplifier and Feedback Divider

The TPS546D24S includes a fully integrated, internal, precision feedback divider and remote sense. Using both

the selectable feedback divider and precision adjustable reference, output voltages up to 6.0 V can be obtained.

The feedback divider can be programmed to divider ratios of 1:1, 1:2, 1:4, or 1:8 using the (29h)

VOUT_SCALE_LOOP command.

The recommended operating range of (21h) VOUT_COMMAND is dependent upon the feedback divider ratio

configured (29h) VOUT_SCALE_LOOP as follows:

表7-1. (29h) VOUT_SCALE_LOOP and (21h)

VOUT_COMMAND Recommended Range

RECOMMENDED V_OUT

VOUT_SCALE_LOOP

RANGE (V)

1

0.25 to 0.75

0.5 to 1.5

1 to 3

0.5

0.25

0.125

2 to 6

English Data Sheet: SLUSF26

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Setting (21h) VOUT_COMMAND lower than the recommended range can negatively affect VOUT regulation

accuracy while setting (21h) VOUT_COMMAND above the recommended range can limit the actual output

voltage achieved.

备注

If the regulation output voltage is limited by the recommended range of the current (29h)

VOUT_SCALE_LOOP value, VOUT can be below the intended (43h) VOUT_UV_WARN_LIMIT or

(44h) VOUT_UV_FAULT_LIMIT without triggering their respective warning or faults due to the limited

range of the reference voltage.

7.3.7 Set Output Voltage and Adaptive Voltage Scaling (AVS)

The initial output voltage can be set by the VSEL pin at AVIN power up. As part of power-on reset (POR), the

VSEL pin senses both the resistance from the VSEL pin to AGND and the divider ratio of the VSEL pin between

B1V5 and AGND. These values program (29h) VOUT_SCALE_LOOP, (21h) VOUT_COMMAND, (2Bh)

VOUT_MIN, and (24h) VOUT_MAX and select the appropriate settings for the internal feedback divider and

precision adjustable reference voltage. After the TPS546D24S completes its POR and enables PMBus

communication, these initial values can be changed through PMBus communication.

• (20h) VOUT_MODE

• (21h) VOUT_COMMAND

• (29h) VOUT_SCALE_LOOP

• (22h) VOUT_TRIM

• (25h) VOUT_MARGIN_HIGH

• (26h) VOUT_MARGIN_LOW

• (01h) OPERATION

• (02h) ON_OFF_CONFIG

The output voltage can be programmed through PMBus and its value is related to the following registers:

• (24h) VOUT_MAX

• (2Bh) VOUT_MIN

• (40h) VOUT_OV_FAULT_LIMIT

• (42h) VOUT_OV_WARN_LIMIT

• (43h) VOUT_UV_WARN_LIMIT

• (44h) VOUT_UV_FAULT_LIMIT

The TPS546D24S defaults to the relative format for the following, but can be changed to use absolute format

through the PMBus command (20h) VOUT_MODE:

• (25h) VOUT_MARGIN_HIGH

• (26h) VOUT_MARGIN_LOW

• (40h) VOUT_OV_FAULT_LIMIT

• (42h) VOUT_OV_WARN_LIMIT

• (43h) VOUT_UV_WARN_LIMIT

• (44h) VOUT_UV_FAULT_LIMIT

Refer to the detailed description of (20h) VOUT_MODE for details.

7.3.7.1 Reset Output Voltage

The (21h) VOUT_COMMAND value and the corresponding output voltage can be reset to the last selected

power-on reset value set by VSEL or EEPROM as selected in the (EEh) MFR_SPECIFIC_30

(PIN_DETECT_OVERRIDE) command when the PGD/RST_B pin function is set to RESET# in the (EDh)

MFR_SPECIFIC_29 (MISC_OPTIONS) PMBus command. To reset (21h) VOUT_COMMAND to its last Power-

On Reset value, when the RESET# optional function is enabled, assert the PGD/RST_B pin low externally.

While RESET# is asserted low, (21h) VOUT_COMMAND values received through PMBus is ACKed but no

change in (21h) VOUT_COMMAND is made. When RESET# is selected in (EDh) MFR_SPECIFIC_29

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(MISC_OPTIONS), an internal pullup on the PGD/RST_B pin can be selected by the PULLUP# bit in the same

PMBus command to eliminate the need for an external pullup with the RESET# function.

PGD/

RST_B

Boot VOUT (VSEL or NVM)

Pre-AVS VOUT

VOUT

Slew Rate set by

VOUT_TRANSITION_RATE

AVS by

VOUT_COMMAND

RST_B Response Delay

图7-7. TPS546D24S Output Voltage Reset

7.3.7.2 Soft Start

To control the inrush current needed to charge the output capacitor bank during start-up, the TPS546D24S

implements a soft-start time programmed by the (61h) TON_RISE command. When the device is enabled, the

reference voltage ramps from 0 V to the final level defined by the following at a slew rate defined by the (61h)

TON_RISE command:

• (21h) VOUT_COMMAND

• (29h) VOUT_SCALE_LOOP

• (22h) VOUT_TRIM

• (25h) VOUT_MARGIN_HIGH

• (26h) VOUT_MARGIN_LOW

• (01h) OPERATION

The TPS546D24S devices support several soft-start times from 0 ms to 31.75 ms in 250-µs steps (7 bits)

selected by the (61h) TON_RISE command. The t_{ON_RISE}time is selectable by pin-strapping through the MSEL2

pin (eight options), PMBus programming, or both.

During soft start, when the PWM pulse width is shorter than the minimum controllable on-time, pulse skipping

can be seen and the output can show larger ripple voltage than normal operation.

7.3.8 Prebiased Output Start-Up

The TPS546D24S limits current from being discharged from a pre-biased output voltage during start-up by

preventing the low-side FET from forcing the SW node low until after the first PWM pulse turns on the high-side

FET. After the increasing reference voltage exceeds VOSNS voltage and high-side SW pulses start, the

TPS546D24S limits the synchronous rectification during each SW period with a narrow on-time. The maximum

low-side MOSFET on-time slowly increases on a cycle-by-cycle basis until 128 switch periods have elapsed and

the synchronous rectifier runs fully complementary to the high-side MOSFET. This limits the sinking of current

from a pre-biased output, and ensures the output voltage start-up and ramp-to regulation sequences are

monotonically increasing.

In the event of a pre-biased output voltage greater than (40h) VOUT_OV_FAULT_LIMIT, the TPS546D24S

responds as soon as it completes POR and VDD5 is greater than its own 3.9-V UVLO, even if conversion is

disabled by EN/UVLO or the PMBus (01h) OPERATION command.

7.3.9 Soft Stop and (65h) TOFF_FALL Command

When enabled by (02h) ON_OFF_CONFIG or (01h) OPERATION, the TPS546D24S implements (65h)

TOFF_FALL command to force a controlled decrease of the output voltage from regulation to 0. There can be

negative inductor current forced during the (65h) TOFF_FALL time to discharge the output voltage. The setting

of (65h) TOFF_FALL of 0 ms means the unit to bring its output voltage down to 0 as quickly as possible, which

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results in an effective (65h) TOFF_FALL time of 0.5 ms. When disabled in the (02h) ON_OFF_CONFIG for the

turnoff controlled by EN/UVLO pin or bit 6 of (01h) OPERATION if the regulator is turned off by (01h)

OPERATION command, both high-side and low-side FET drivers are turned off immediately and the output

voltage slew rate is controlled by the discharge from the external load.

This feature is disabled for EN/UVLO in (02h) ON_OFF_CONFIG by default.

7.3.10 Power Good (PGOOD)

When conversion is enabled and t_{ON_RISE}complete, if the output voltage remains between (43h)

VOUT_UV_WARN_LIMIT and (42h) VOUT_OV_WARN_LIMIT, the PGOOD open-drain output is released and

allowed to rise to an externally supplied logic level. Upon any fault condition with a shutdown response, the

PGOOD open-drain output is asserted, forcing PGOOD low by default. See 表 7-4 for the possible sources to

pull down the PGOOD pin.

The PGOOD signal can be connected to the EN/UVLO pin of another device to provide additional controlled

turnon and turnoff sequencing.

7.3.11 Set Switching Frequency

An internal oscillator generates a 225-kHz to 1.5-MHz clock for PWM switching with 16 discrete programmable

options. The switching frequency is selectable by pin-strapping through the resistor divider of MSEL1 (8 options),

PMBus programming (16 options), or both, using the (33h) FREQUENCY_SWITCH command, listed in 表7-2.

表7-2. Oscillator f_SWOptions

AVAILABLE f_SWOPTIONS (kHz)

f_SWPIN-STRAPPING OPTIONS (kHz)

225

275

325

375

450

550

650

750

900

1100

1300

1500

275

325

450

550

650

900

1100

1500

7.3.12 Frequency Synchronization

The oscillator can be synchronized to external clock (SYNC IN) or output a clock to synchronize other devices

(SYNC out) on the SYNC pin. To support phase shifted clock for both multi-rail interleaving and multi-phase

operation, the internal oscillator can be phase-shifted from the SYNC pin by 0, 90, 120, 180, 240, or 270

degrees for 1, 2, 3, or 4 phase operation. The SYNC IN or SYNC OUT function, and phase position of single

phase or stand-alone devices can be selected by pin-strapping through resistor divider on at the ADRSEL pin, or

by the resistor from the MSEL2 pin to AGND for multi-phase loop follower devices.

In single output multi-phase stack configurations, the SYNC phase offset is programmed along with device count

and phase position using the MSEL2 pin. Loop follower devices in multi-phase stacks are always configured as

SYNC_IN while the loop controller device can be configured for auto-detect, SYNC_IN, or SYNC_OUT through

the resistor divider on the ADRSEL pin.

表7-3. Pin Programmed Phase Positions through ADRSEL Resistor Divider (Single Phase Stand-Alone)

RDIV CODE

Open (no resistor to BP1V5)

0, 1

PHASE POSITION (DEGREE)

SYNC IN, OUT

Auto-detect in, out

In

0

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表7-3. Pin Programmed Phase Positions through ADRSEL Resistor Divider (Single Phase Stand-Alone)

(continued)

RDIV CODE

2, 3

PHASE POSITION (DEGREE)

SYNC IN, OUT

90

120

180

240

270

0

In

4, 5

6, 7

In

8, 9

In

10,11

12, 13

14, 15

In

Out

180

After initial power up and pin detection, if SYNC IN/OUT is set as auto-detection configuration, the TPS546D24S

senses the SYNC pin to determine if there is any external SYNC clock. Switching or a consistent pullup on the

SYNC pin sets the device for SYNC_IN while a consistent pulldown on SYNC sets the device for SYNC_OUT.

The TPS546D24S devices programmed to be loop followers are always programmed to be SYNC IN.

When configured for SYNC_IN, if SYNC input pulses are missed for two cycles, or the oscillator frequency drops

below 50% of the free-running switching frequency, the device determines that SYNC clock is lost. If the

TPS546D24S is part of a multi-phase stack, the converter shuts down and remains disabled until a SYNC signal

is reestablished to prevent damage due to the loss of synchronization. Single phase stand-alone devices

continues to operate at approximately 50% of the nominal frequency.

7.3.13 Loop Follower Detection

The GOSNS/FLWR pin voltage is detected at power up. When it is pulled high to BP1V5, the device is

recognized as loop follower. When the GOSNS/FLWR pin is connected to the Output Ground, the TPS546D24S

is configured as a loop controller.

7.3.14 Current Sensing and Sharing

Both high-side and low-side FET use a SenseFET architecture for current sensing to achieve accurate and

temperature compensated current monitoring. This SenseFET architecture uses the parasitic resistance of the

FETs to achieve lossless current sense with no external components.

When multiple (2×, 3×, or 4×) devices operate in multi-phase application, all devices share the same internal

control voltage through VSHARE pin. The sensed current in each phase is regulated by the VSHARE voltage by

internal transconductance amplifier, to achieve loop compensation and current balancing between different

phases. The amplifier output voltage is compared with an internal PWM ramp to generate the PWM pulse.

7.3.15 Telemetry

The telemetry sub-system in the controller core supports direct measurements of input voltage, output voltage,

output current, and die temperature. The ADC supports internal rolling window averaging with rolling windows up

to 16 previous measurements for accurate measurements of these key system parameters. Each ADC

conversion requires less than 500 µs, allowing each telemetry value to be updated within 2 ms.

The current sense telemetry, which senses the low-side FET current at the start and end of each low-side FET

on-time and averages the two measurements to monitor the average inductor current over-report current if the

inductor current is non-linear during the low-side FET on-time, such as when the inductor is operating above its

saturation current.

7.3.16 Overcurrent Protection

Both low-side overcurrent (OC) and high-side short circuit protection are implemented.

The low-side overcurrent fault and warning thresholds are programmed through PMBus and sensed across

cycle-by-cycle average current through the low-side MOSFET and compared to the set warning or fault threshold

while High-side pulses are terminated on a cycle-by-cycle basis, if the peak current through the high-side

MOSFET exceeds the 1.5× the programmed low-side threshold.

English Data Sheet: SLUSF26

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When either a low-side overcurrent or high-side short circuit threshold is exceeded during a switching cycle, an

OCP fault counter is incremented. If no overcurrent condition is detected in a switching cycle, the counter is

decremented. If the counter exceeds the delay selected by the (47h) IOUT_OC_FAULT_RESPONSE PMBus

value (default = 3) overcurrent fault condition is declared and the output shuts down. Restart and timing is also

defined as part of (47h) IOUT_OC_FAULT_RESPONSE.

The output OC fault thresholds and fault response are set through PMBUS. The OC fault response can be set to

shutdown, restart, or ignore.

7.3.17 Overvoltage/Undervoltage Protection

The voltage on VOSNS pin is monitored to provide output voltage overvoltage (OV) and undervoltage (UV)

protection. When VOSNS voltage is higher than OV fault threshold, OV fault is declared and the low-side FET is

turned on to discharge the output voltage and eliminate the OV condition. The low-side FET remains on until the

VOSNS voltage is discharged to 200 mV divided by the internal feedback divider as programmed by (29h)

VOUT_SCALE_LOOP. After the output voltage is discharged, the output is disabled and the converter times out

and restarts according to the (41h) VOUT_OV_FAULT_RESPONSE PMBus command. When VOSNS voltage is

lower than UV fault threshold, UV fault is declared. After an initial delay programmed by the (45h)

VOUT_UV_FAULT_RESPONSE PMBus command, the output is disabled and the converter times out and

restarts according to the (45h) VOUT_UV_FAULT_RESPONSE PMBus command.

The output UV/OV fault thresholds and fault response are set through PMBUS. The UV/OV fault response can

be set to shutdown, restart, or continue operating without interruption.

7.3.18 Overtemperature Management

There are two schemes of overtemperature protections in the TPS546D24S device:

1. On-chip die temperature sensor for monitoring and overtemperature protection (OTP)

2. The bandgap based thermal shutdown (TSD) protection. TSD provides OT fail-safe protection in the event of

a failure of the temperature telemetry system, but can be disabled through (50h) OT_FAULT_RESPONSE

for high temperature testing

The overtemperature protection (OTP) threshold is set through PMBus and compares the (8Dh)

READ_TEMPERATURE_1 telemetry to the (51h) OT_WARN_LIMIT and (4Fh) OT_FAULT_LIMIT. The

overtemperature (OT) fault response can be set to shutdown, restart, or continue operating without interruption.

7.3.19 Fault Management

For the response on OC fault, OT fault, and thermal shutdown for multi-phase stack, the shutdown response has

the highest priority, followed by restart response. Continue operating without interruption response has the

lowest priority.

When multiple faults occur in rapid succession, the first fault to occur to masking the second fault is possible. If

the first fault to be detected is configured to continue operating without interruption, and the second fault is

configured to shutdown and restart, the second fault shuts down but can fail to restart as programmed.

表7-4. Fault Protection Summary

FAULT OR

WARNING

FAULT RESPONSE

ACTIVE DURING

PROGRAMMING

FET BEHAVIOR

SMB_ALRT

MASKABLE

PGOOD LOGIC

SETTING

t_{ON_RISE}

Shutdown

Restart

Ignore

Both FETs off

Low

(4Fh)

OT_FAULT_LIMIT

Internal OT fault

Internal OT warning

TSD

Both FETs off, restart

Yes

Y

FETS still controlled by PWM

High

Shutdown or restart

on Fault

(51h)

OT_WARN_LIMIT

FETS still controlled by PWM

Y

High

Ignore fault

Shutdown

Restart

Both FETs off

Low

Threshold fixed

internally

Both FETs off, restart

High

Ignore

FETS still controlled by PWM

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表7-4. Fault Protection Summary (continued)

FAULT OR

WARNING

FAULT RESPONSE

ACTIVE DURING

PROGRAMMING

FET BEHAVIOR

SMB_ALRT

MASKABLE

PGOOD LOGIC

SETTING

t_{ON_RISE}

Shutdown

3 PWM counts, then both FETs off

(46h)

IOUT_OC_FAULT_LI

MIT

Low

High

3 PWM counts, then both FETs

off, restart after [DELAY]*t_{ON_RISE}

Low Side OC fault

Restart

Ignore

Yes

Y

FETS still controlled by PWM

Shutdown or restart

on Fault

(4Ah)

IOUT_OC_WARN_LI

MIT

Low Side OC

warning

FETS still controlled by PWM

Yes

Y

Ignore fault

Enable

Negative OC fault

(lower priority than

OVF)

Turn off LS FET

Low

N/A

Disable

FETS still controlled by PWM

High

3 cycles of pulse-by-pulse current

limiting followed by both FETs off

Shutdown

(46h)

IOUT_OC_FAULT_LI

MIT

Low

3 cycles of pulse-by-pulse current

limiting followed by both FETs off,

restart after [DELAY]*t_{ON_RISE}

High side OC fault

Yes

Y

Restart

Ignore

FETS still controlled by PWM

High

LS FET latched ON or turned on

till V_OUTreaches 200 mV/

VOUT_SCALE_LOOP; HS FET

OFF

Shutdown

Restart

(40h)

VOUT_OV_FAULT_L

IMIT

Low

High

Low

LS FET latched ON or turned on

till V_OUTreaches 200 mV/

VOUT_SCALE_LOOP; HS FET

OFF, restart after [DELAY] *

t_{ON_RISE}

Vout OV fault

No

Y

Ignore

FETS still controlled by PWM

LS FET latched ON or turned on

till V_OUTreaches 200 mV/

VOUT_SCALE_LOOP; HS FET

OFF

Shutdown

(40h)

VOUT_OV_FAULT_L

IMIT

LS FET latched ON or turned on

till V_OUTreaches 200 mV/

VOUT_SCALE_LOOP; HS FET

OFF, restart after

V_OUTOVF fix

Yes

Y

Restart

Ignore

[DELAY]*t_{ON_RISE}

FETS still controlled by PWM

Both FETs off

High

Shutdown or restart

on Fault

(42h)

VOUT_OV_WARN_L

IMIT

Vout OV warning

Vout UV fault

No

Y

Ignore Fault

Shutdown

(44h)

VOUT_UV_FAULT_L

IMIT

Low

High

Low

Both FETs off , restart after

[DELAY]*t_{ON_RISE}

Restart

Ignore

FETS still controlled by PWM

Both FETs off

Shutdown or restart

on Fault

(43h)

VOUT_UV_WARN_L

IMIT

Vout UV warning

Ignore fault

Shutdown

(62h)

TON_MAX_FAULT_L

IMIT

Low

Both FETs off, restart after

[DELAY]*t_{ON_RISE}

t_{ON MAX}rault

PVin UVLO

Restart

Ignore

Yes

Y

FETS still controlled by PWM

Both FETs off

High

Low

(35h) VIN_ON, (36h)

VIN_OFF

Shutdown

Restart

Ignore

Both FETs off

(55h)

VIN_OV_FAULT_LIM

IT

Low

PVIN OV FAULT

BCX_fault

Both FETs off, restart

Yes

Y

FETS still controlled by PWM

High

N/A

VSEL

MSEL1

MSEL2

ADRSEL

Pin_Strap_NonConv

erge

No (active before

Both FETs off, pull low VSHARE

N

N/A

Low

t_{ON_RISE}

)

SYNC_Fault

Loop controller or

stand-alone device

Yes

High

Low

FETS still controlled by PWM

Loop follower device

Both FETs off, pull low VSHARE

English Data Sheet: SLUSF26

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表7-4. Fault Protection Summary (continued)

FAULT OR

WARNING

FAULT RESPONSE

ACTIVE DURING

PROGRAMMING

FET BEHAVIOR

SMB_ALRT

MASKABLE

N/A

PGOOD LOGIC

SETTING

t_{ON_RISE}

SYNC_High/Low

N/A

Loop controller or

stand-alone device

Yes

N

High

Low

FETS still controlled by PWM

Loop follower device

Both FETs off, pull low VSHARE

7.3.20 Back-Channel Communication

To allow multiple devices with a shared output to communicate through a single PMBus address and single

PMBus loop follower, the TPS546D24S uses a back-channel communication implemented through BCX_CLK

and BCX_DAT pins. During POR, all of the devices connected to VSHARE must also be connected to BCX_CLK

and BCX_DAT and have appropriate (ECh) MFR_SPECIFIC_28 (STACK_CONFIG) settings. Any programming

error among the devices of a stack results in a POR fault and prevent enabling of conversion.

During POR, the loop controller reads the programmed values from the loop followers to ensure all expected

loop followers are present and correctly phase-shifted. Then, the loop controller loads critical operating

parameters such as the following to the loop follower devices to ensure correct operation of the STACK:

• (B1h) USER_DATA_01 (COMPENSATION_CONFIG)

• (33h) FREQUENCY_SWITCH

• (61h) TON_RISE

• (21h) VOUT_COMMAND

During operation, the loop controller device receives and responds to all PMBus communication, and loop

follower devices do not need to be connected to the PMBus. If the loop controller receives commands that

require updates to the PMBus registers of the loop follower, the loop controller relays these commands to the

loop followers. Additionally, the loop controller periodically polls loop follower devices for status and telemetry

information to maintain an accurate record of the telemetry and STATUS information for the full stack of devices.

Most PMBus communication must be directed to all phases by leaving the (04h) PHASE PMBus command at its

Power On Reset default value of FFh. If a specific device must be communicated with, the (04h) PHASE

command can be changed to address a specific device within the stack, as set by the order value of the (37h)

INTERLEAVE command programmed during POR.

When commands are directed to individual loop followers, write commands are queued by the loop controller to

be sent to the loop followers through the BCX if other BCX communication is in progress. Queued write

commands are written to the loop followers in the order the loop controller receives them. To avoid unnecessary

delays on the PMBus and excessive clock stretching, read transactions targeting individual loop followers are not

queued, and are processed as soon as the BCX bus is available. As a result, it is possible for a read command

targeting an individual loop follower immediately following a write command can be processed before the

preceding write command. To ensure accurate read-back, users must allow a minimum of 4 ms between writing

a value to an individual loop follower and reading that same value back from the same loop follower.

7.3.21 Switching Node (SW)

The SW pin connects to the switching node of the power conversion stage. It acts as the return path for the

highside gate driver. When configured as a synchronous buck stage, the voltage swing on SW normally

traverses from below ground to well above the input voltage. Parasitic inductance in the high-side FET and the

output capacitance (COSS) of both power FETs form a resonant circuit that can produce high frequency (> 100

MHz) ringing on this node. The voltage peak of this ringing, if not controlled, can be significantly higher than the

input voltage. Ensure that the peak ringing amplitude does not exceed the absolute maximum rating limit for the

pin.

In many cases, a series resistor and capacitor snubber network connected from the switching node to PGND

can be helpful in damping the ringing and decreasing the peak amplitude. Provide provisions for snubber

network components in the layout of the printed circuit board. If testing reveals that the ringing amplitude at the

SW pin exceeds the limit, then include snubber components.

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7.3.22 PMBus General Description

Timing and electrical characteristics of the PMBus interface specification can be found in the PMB Power

Management Protocol Specification, Part 1, revision 1.3 available at http://pmbus.org. The TPS546D24S device

supports both the 100-kHz, 400-kHz, and 1-MHz bus timing requirements.

The TPS546D24S uses clock stretching during PMBus communication, but only stretches the clock during

specific bits of the transaction.

• The TPS546D24S does not stretch the clock during the address byte of any transaction.

• The TPS546D24S can stretch the clock between bit 0 of the command byte and its ACK response.

• The TPS546D24S stretches the clock after bit 0 of the read address of a read transaction.

• The TPS546D24S stretches the clock between bit 0 of the last byte of data and its ACK response

• The TPS546D24S can stretch the clock between bit 1 and bit zero of every fourth byte of data for blocks with

more than four bytes of data.

Communication over the PMBus interface can either support the packet error checking (PEC) scheme or not. If

the loop controller supplies clock (CLK) pulses for the PEC byte, PEC is used. If the CLK pulses are not present

before a STOP, the PEC is not used. If PEC is always used, consider enabling Require PEC in (EDh)

MFR_SPECIFIC_29 (MISC_OPTIONS) to configure the TPS546D24S to reject any write transaction that does

not include CLK pulses for a PEC byte.

The device supports a subset of the commands in the PMBus 1.3 Power Management Protocol Specification.

See Supported PMBus Commands for more information

The TPS546D24S also supports the SMB_ALERT response protocol. The SMB_ALERT response protocol is a

mechanism by which the TPS546D24S can alert the bus loop controller that it has experienced an alert and has

important information for the host. The host must process this event and simultaneously accesses all loop

followers on the bus that support the protocol through the alert response address. All loop followers that are

asserting SMB_ALERT must acknowledge this request with their PMBus Address. The host performs a modified

receive byte operation to get the address of the loop follower. At this point, the loop controller can use the

PMBus status commands to query the loop follower that caused the alert. For more information on the SMBus

alert response protocol, see the system management bus (SMBus) specification. Persistent faults associated

with status registers other than (7Eh) STATUS_CML reassert SMB_ALERT after responding to the host alert

response address.

The TPS546D24S contains non-volatile memory that is used to store configuration settings and scale factors.

The settings programmed into the device are not automatically saved into this non-volatile memory. The (15h)

STORE_USER_ALL command must be used to commit the current PMBus settings to non-volatile memory as

device defaults. The settings that are capable of being stored in non-volatile memory are noted in their detailed

descriptions.

All pin programmable values can be committed to non-volatile memory. The POR default selection between pin

programmable values and non-volatile memory can be selected by the manufacturer specific (EEh)

MFR_SPECIFIC_30 (PIN_DETECT_OVERRIDE) command.

7.3.23 PMBus Address

The PMBus specification requires that each device connected to the PMBus have a unique address on the bus.

The TPS546D24S PMBus address is determined by the value of the resistor connected between ADRSEL and

AGND and is programmable over the range from 0x10 –0x2F, providing 32 unique PMBus addresses.

7.3.24 PMBus Connections

The TPS546D24S supports the 100-kHz, 400-kHz, and 1-MHz bus speeds. Connection for the PMBus interface

must follow the high power DC specifications given in section 3.1.3 in the SMBus specification V2.0 for the 400-

kHz bus speed or the low power DC specifications in section 3.1.2. The complete SMBus specification is

available from the SMBus web site, smiforum.org

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The PMBus interface pins: PMB_CLK, PMB_DATA, and SMB_ALRT require external pullup resistors to a 1.8-V

to 5.5-V termination. Pullup resistors must be sized to meet the minimize rise-time required for the desired

PMBus clock speed but must not source more current than the lowest rated CLK, DATA, or SMB_ALRT pin on

the bus when the bus voltage is forced to 0.4 V. The TPS546D24S supports a minimum of 20 mA of sink current

on PMB_CLK, PMB_DATA, and SMB_ALRT.

7.4 Device Functional Modes

7.4.1 Programming Mode

The TPS546D24S devices can operate in programming mode when AVIN and VDD5 are powered above their

lower UVLO but VDD5 and PVIN are not powered above their UVLO to enable conversion. In programing mode,

the TPS546D24S accepts and responds to PMBus commands but does not enable switching or conversion.

While PMBus commands can be accepted and processed with VDD5 lower than 3 V, NVM programming through

the (15h) STORE_USER_ALL command must not be used when VDD5 is less than 3 V.

Programming mode allows the TPS546D24S to complete POR and to be configured through PMBus from a 3.3-

V supply without PVIN present.

7.4.2 Standalone, Loop Controller, Loop Follower Mode Pin Connections

The TPS546D24S can be programmed as a standalone device (Single Output, Single Phase) loop controller

device of a single-output multi-phase stack of devices, or a loop follower device to a loop controller of a mult-

phase stack. The details of the recommended pin connects for each configuration is given in 表7-5.

表7-5. Standalone, Loop Controller, Loop Follower Pin Connections

STANDALONE

LOOP CONTROLLER

LOOP FOLLOWER

GOSNS

Ground at Output Regulation Point

BP1V5

Float or connect to divider for other

voltage to be monitored

VOSNS

Vout at Output Regulation Point

Enable/Control or Resistor Divider

from PVIN

Enable/Control or Resistor Divider

from PVIN

Connect to EN/UVLO of the loop

controller

EN/UVLO

MSEL1

Programming MSEL1

Short to PGND (Thermal Pad)

Programming MSEL2 for a Loop

Follower Device (GOSNS Tied to

BP1V5)

MSEL2

Programming MSEL2

VSEL

Programming VSEL

Short to PGND (Thermal Pad)

ADRSEL

Programming ADRSEL

Float or Bypass to AGND with

capacitor

Connect to VSHARE of the loop

follower

Connect to VSHARE of the loop

controller

VSHARE

SYNC

Float or External Sync

External Sync or loop follower SYNC Connect to SYNC of the loop controller

Connect to System PMBus or PGND

(Thermal Pad) if not used

Connect to System PMBus or PGND

Short to PGND (Thermal Pad)

(Thermal Pad) if not used

PMB_CLK

Connect to System PMBus or PGND

(Thermal Pad) if not used

Connect to System PMBus or PGND

Short to PGND (Thermal Pad)

(Thermal Pad) if not used

PMB_DATA

SMB_ALRT

BCX_CLK

Connect to System PMBus or PGND

(Thermal Pad) if not used

Connect to System PMBus or PGND

Short to PGND (Thermal Pad)

(Thermal Pad) if not used

Connect to BCX_CLK of the loop

Short to PGND (Thermal Pad)

Connect to loop followers BCX_CLK

controller

Connect to BCX_DAT of the loop

BCX_DAT

Connect to loop followers BCX_DAT

controller

Connect to System PGD or RESET#

or PGND (Thermal Pad) if not used

Connect to System PGD or RESET#

Short to PGND (Thermal Pad)

PGOOD/RST_B

or PGND (Thermal Pad) if not used

7.4.3 Continuous Conduction Mode

The TPS546D24S devices operate in continuous conduction mode (CCM) at a fixed frequency, regardless of the

output current. During soft start, some of the low-side MOSFET on-times are limited to prevent excessive current

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sinking in the event the device is started with a prebiased output. After the first PWM pulse, and with each

successive PWM pulse, this limit is increased to allow more low-side FET on-time and transition to CCM. After

this transition has completed, the low-side MOSFET and the high-side MOSFET on-times are fully

complementary.

7.4.4 Operation With CNTL Signal (EN/UVLO)

According to the value in the (02h) ON_OFF_CONFIG register, the TPS546D24S devices can be commanded to

use the EN/UVLO pin to enable or disable regulation, regardless of the state of the (01h) OPERATION

command. The EN/UVLO pin can be configured as either active high or active low (inverted) logic. To use EN/

UVLO pin as a programmable UVLO, the polarity set by (02h) ON_OFF_CONFIG must be positive logic.

7.4.5 Operation with (01h) OPERATION Control

According to the value in the (02h) ON_OFF_CONFIG register, the TPS546D24S devices can be commanded to

use the (01h) OPERATION command to enable or disable regulation, regardless of the state of the CNTL signal.

7.4.6 Operation with CNTL and (01h) OPERATION Control

According to the value in the (02h) ON_OFF_CONFIG command, the TPS546D24S devices can be commanded

to require both a CNTRL signal from the EN/UVLO pin, and the (01h) OPERATION command to enable or

disable regulation.

7.5 Programming

7.5.1 Supported PMBus Commands

The commands listed in 表 7-6 are implemented as described to conform to the PMBus 1.3 specification. 表 7-6

also lists the default for the bit behavior and register values.

表7-6. Supported PMBus Commands and Default Values

CMD CODE (HEX)

COMMAND NAME (PMBus 1.3 SPEC)

DEFAULT VALUE

01h

02h

03h

04h

10h

15h

16h

19h

1Bh

20h

21h

22h

24h

25h

26h

27h

29h

2Bh

33h

35h

36h

37h

38h

OPERATION

04h

ON_OFF_CONFIG

CLEAR_FAULTS

PHASE

17h

n/a

FFh

WRITE_PROTECT

STORE_USER_ALL

RESTORE_USER_ALL

CAPABILITY

00h

n/a

D0h

SMBALERT_MASK

VOUT_MODE

n/a

97h

VOUT_COMMAND

VOUT_TRIM

019Ah

0000h

0C00h

021Ah

01E6h

E010h

C840h

0100h

01C2h

F00Bh

F00Ah

0020h

C880h

VOUT_MAX

VOUT_MARGIN_HIGH

VOUT_MARGIN_LOW

VOUT_TRANSITION_RATE

VOUT_SCALE_LOOP

VOUT_MIN

FREQUENCY_SWITCH

VIN_ON

VIN_OFF

INTERLEAVE

IOUT_CAL_GAIN

English Data Sheet: SLUSF26

36

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表7-6. Supported PMBus Commands and Default Values (continued)

CMD CODE (HEX)

COMMAND NAME (PMBus 1.3 SPEC)

IOUT_CAL_OFFSET

VOUT_OV_FAULT_LIMIT

VOUT_OV_FAULT_RESPONSE

VOUT_OV_WARN_LIMIT

VOUT_UV_WARN_LIMIT

VOUT_UV_FAULT_LIMIT

VOUT_UV_FAULT_RESPONSE

IOUT_OC_FAULT_LIMIT

IOUT_OC_FAULT_RESPONSE

IOUT_OC_WARN_LIMIT

OT_FAULT_LIMIT

DEFAULT VALUE

39h

E000h

024Dh

BDh

40h

41h

42h

022Eh

01CCh

01B2h

BEh

43h

44h

45h

46h

F0D0h

FFh

47h

4Ah

4Fh

50h

F0A0h

0096h

BCh

OT_FAULT_RESPONSE

OT_WARN_LIMIT

51h

007Dh

0015

55h

VIN_OV_FAULT_LIMIT

VIN_OV_FAULT_RESPONSE

VIN_UV_WARN_LIMIT

TON_DELAY

56h

3Ch

58h

F00Ah

F800h

F00Ch

F800h

3Bh

60h

61h

TON_RISE

62h

TON_MAX_FAULIT_LIMIT

TON_MAX_FAULT_RESPONSE

TOFF_DELAY

63h

64h

F800h

F002h

00h

65h

TOFF_FALL

78h

STATUS_BYTE

79h

STATUS_WORD

00h

7Ah

7Bh

7Ch

7Dh

7Eh

7Fh

80h

STATUS_VOUT

00h

STATUS_IOUT

00h

STATUS_INPUT

00h

STATUS_TEMPERATURE

STATUS_CML

00h

STATUS_OTHER

00h

STATUS_MFR_SPECIFIC

READ_VIN

00h

88h

n/a

8Bh

8Ch

8Dh

98h

READ_VOUT

n/a

READ_IOUT

n/a

READ_TEMPERATURE_1

PMBUS_REVISION

n/a

33h

99h

MFR_ID

00 00 00h

54 49 54 6D 24 62h

41 00h

22 18 C2 1D 06h

70h

9Ah

9Bh

9Eh

ADh

AEh

B1h

B5h

D0h

MFR_MODEL

MFR_REVISION

MFR_SERIAL

IC_DEVICE_ID

IC_DEVICE_REV

USER_DATA_01 (COMPENSATION_CONFIG)

USER_DATA_05 (POWER_STAGE_CONFIG)

MFR_SPECIFIC_00 (TELEMETRY_CONFIG)

03 03 03 03 03 00h

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表7-6. Supported PMBus Commands and Default Values (continued)

CMD CODE (HEX)

COMMAND NAME (PMBus 1.3 SPEC)

DEFAULT VALUE

DAh

DBh

E4h

ECh

EDh

EEh

EFh

F0h

F1h

FAh

FBh

FCh

FDh

MFR_SPECIFIC_10 (READ_ALL)

n/a

MFR_SPECIFIC_11 (STATUS_ALL)

MFR_SPECIFIC_20 (SYNC_CONFIG)

MFR_SPECIFIC_28 (STACK_CONFIG)

MFR_SPECIFIC_29 (MISC_OPTIONS)

MFR_SPECIFIC_30 (PIN_DETECT_OVERRIDE)

MFR_SPECIFIC_31 (DEVICE_ADDRESS)

MFR_SPECIFIC_32 (NVM_CHECKSUM)

MFR_SPECIFIC_33 (SIMULATE FAULTS)

MFR_SPECIFIC_42 (PASSKEY)

F0h

0000h

1F2Fh

24h

E9E0h

0000h

MFR_SPECIFIC_43 (EXT_WRITE_PROTECT)

MFR_SPECIFIC_44 (FUSION_ID0)

0000h

02C0h

54 49 4C 4F 43 4Bh

MFR_SPECIFIC_45 (FUSION_ID1)

7.5.2 Pin Strapping

The TPS546D24S provides four IC pins that allow the initial PMBus programming value on critical PMBus

commands to be selected by the resistors connected to that pin without requiring PMBus communication.

Whether a specific PMBus command is initialized to the value selected by the detected resistance or stored

NVM memory is determined by the commands bit in the PIN_DETECT_OVERRIDE PMBus Command. The four

pins and the commands they program for a loop controller or Stand-alone device (GOSNS connected to Ground)

are provided in 表7-7.

Each pin can be programmed in one of four ways:

• Pin shorted to AGND with less than 20 Ω

• Pin floating or tied to BP1V5 with more than 1 MΩ

• Pin bypassed to AGND through a resistor according to R2G code only (16 Resistor Options)

• Pin bypassed to AGND through a resistor according to R2G code and to BP1V5 according to Divider Code

(16 Resistor x 16 Resistor Divider Options)

Due to the flexibility of programming options with up to 274 configurations per pin, it is recommended that

designers consider using one of the available design tools, such as TPS546x24S Compensation and Pin-Strap

Resistor Calculator to assist with proper programming resistor selection.

表7-7. TPS546D24S Pin Programming Summary

RESISTORS

PMBus REGISTERS

MSEL1

MSEL2

Resistor to AGND

COMPENSATION_CONFIG

Resistor Divider

Resistor to AGND

Resistor Divider

Both

COMPENSATION_CONFIG, FREQUENCY_SWITCH

IOUT_OC_WARN_LIMIT, IOUT_OC_FAULT_LIMIT, STACK_CONFIG

TON_RISE

VSEL

VOUT_COMMAND, VOUT_SCALE_LOOP, VOUT_MAX, VOUT_MIN

DEVICE_ADDRESS

ADRSEL

Resistor to AGND

Resistor Divider

DEVICE_ADDRESS, SYNC_CONFIG, INTERLEAVE

备注

Resistor divider values of "none" can be implemented with no resistor to BP1V5 or use a 1-MΩ

resistor to BP1V5 for improved reliability and noise immunity.

English Data Sheet: SLUSF26

38

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Loop follower with GOSNS tied to BP1V5 only use the resistor from MSEL2 to AGND to program the following:

• (4Ah) IOUT_OC_WARN_LIMIT

• (46h) IOUT_OC_FAULT_LIMIT

• (ECh) MFR_SPECIFIC_28 (STACK_CONFIG)

• (37h) INTERLEAVE

The loop follower receives all other pin programmed values from the loop controller over BCX as part of the

power-on reset function.

备注

The high precision Pin-Detection programming which provides 8-bit resolution for each pin in the

TPS546D24S can be sensitive to PCB contamination from flux, moisture, and debris. As such, users

must consider committing Pin Programmed values to User Non-Volatile memory and disable future

use of Pin Strapped values as part of the product flow. The programming sequence to commit Pin

Programmed PMBus register values to NVM and disable future use of Pin Strapped programming is:

• Select MSEL1, MSEL2, VSEL and ADRSEL programming resistors to program the desired PMBus

register values.

• Power AVIN and VDD5 above their UVLOs to initiate pin detection and enable PMBus

communication.

• Update any PMBus register values not programmed to their final value by Pin Detection.

• Write the value 0000h using the Write Word protocol to (EEh) MFR_SPECIFIC_30

(PIN_DETECT_OVERRIDE).

• Send the command code 15h using the Send Byte protocol to initialize a (15h)

STORE_USER_ALL function.

• Allow a minimum 100 ms for the device to complete a burn of NVM User Store. Loss of AVIN or

VDD5 power during this 100 ms can compromise the integrity of the NVM. Failure to complete the

NVM burn can result in a corruption of NVM and a POR fault on subsequent power on resets.

7.5.2.1 Programming MSEL1

The

MSEL1

programs

(B1h)

USER_DATA_01

(COMPENSATION_CONFIG)

and

(33h)

FREQUENCY_SWITCH. The resistor divider ratio for MSEL1 selects the nominal switching frequency using 表

7-8:

表7-8. MSEL1 Divider Code for Programming

RESISTOR

DIVIDER

CODE

COMPENSATION_CONFIG (CONFIG #)

FREQUENCY_SWITCH VALUE (kHz)

None (No

Resistor to

BP1V5)

7 - 25 (Select Values)

550

0

1

2

3

4

5

6

7

8

9

0-15

16-31

0-15

275

325

450

550

650

16-31

0-15

16-31

0-15

16-31

0-15

16-31

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表7-8. MSEL1 Divider Code for Programming (continued)

RESISTOR

DIVIDER

CODE

COMPENSATION_CONFIG (CONFIG #)

FREQUENCY_SWITCH VALUE (kHz)

10

11

12

13

14

15

0-15

16-31

0-15

900

1100

1500

16-31

0-15

16-31

The resistor to ground for MSEL1 selects the (B1h) USER_DATA_01 (COMPENSATION_CONFIG) values to

program the following voltage loop and current loop gains. For options other than the EEPROM code (MSEL1

shorted to AGND or MSEL1 to AGND resistor code 0), the Current and Voltage loop zero and pole frequencies

are scaled with the programmed switching frequency. The current loop pole frequency is located at

approximately the switching frequency, while the current loop zero is located at approximately 1/20 the switching

frequency. The voltage loop pole is located at approximately ½ the switching frequency and the voltage loop

zero is located at approximately 1/100 the switching frequency.

表7-9. MSEL1 Resistor to AGND Code with no Divider Programming

COMPENSATION (NO DIVIDER)

COMPENSATION (EVEN DIVIDER)

COMPENSATION (ODD DIVIDER)

RESISTOR

CODE

I LOOP

GAIN

V LOOP

GAIN

I LOOP

GAIN

V LOOP

GAIN

I LOOP

GAIN

V LOOP

GAIN

CONFIG #

Short

Float

0

3

2

N/A

0

N/A

16

17

18

19

20

21

22

23

24

25

26

27

28

20

30

31

N/A

5

N/A

0.5

1

EEPROM

N/A

7

3

4

5

6

1

2

4

8

1

2

4

8

1

2

4

8

1

2

4

8

EEPROM

1

8

1

2

3

4

0.5

1

5

2

9

2

5

2

3

10

12

13

14

15

17

18

19

20

22

23

24

25

3

2

5

4

5

8

5

8

6

0.5

1

6

0.5

1

6

7

6

2

8

2

6

4

9

4

6

8

10

11

12

13

14

15

10

11

12

13

14

15

8

7

0.5

1

0.5

1

7

2

7

4

7

8

10

2

With both the resistor to ground code and the resistor divider code, use the look-up table to select the

appropriate resistors.

7.5.2.2 Programming MSEL2

The resistor divider on MSEL2 pin programs the (61h) TON_RISE value to select the soft-start time used by the

TPS546D24S.

English Data Sheet: SLUSF26

40

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表7-10. MSEL2 Divider Code for Programming

RESISTOR DIVIDER CODE

TON_RISE VALUE (ms)

None (No Resistor to BP1V5)

Short to AGND

3

Float

0

1

2

3

4

5

6

7

0.5

1

3

5

7

10

20

31.75

The resistor to ground for MSEL2 selects the (4Ah) IOUT_OC_WARN_LIMIT, (46h) IOUT_OC_FAULT_LIMIT,

and (ECh) MFR_SPECIFIC_28 (STACK_CONFIG) values using 表7-11.

表7-11. MSEL2 Resistor to AGND Code for IOUT_OC_WARN/FAULT_LIMIT and

STACK Programming

RESISTOR TO

AGND CODE

STACK_CONFIG(NUMBER OF

LOOP FOLLWOERS / # OF

PHASES)

OC_WARN (A) / OC_FAULT (A)

Short

0000h (0 loop followers, Stand-

alone)

40/52

Float

0

0001h (1 loop follower, 2-phase)

0000h (0 loop followers, Stand-

alone)

1

2

3

4

0001h (1 loop follower, 2-phase)

0002h (2 loop followers, 3-phase)

0003h (3 loop followers, 4-phase)

40/52

30/39

20/26

10/14

0000h (0 loop followers, Stand-

alone)

5

6

7

8

0001h (1 loop follower, 2-phase)

0002h (2 loop followers, 3-phase)

0003h (3 loop followers, 4-phase)

0000h (0 loop followers, Stand-

alone)

9

0001h (1 loop follower, 2-phase)

0002h (2 loop followers, 3-phase)

0003h (3 loop followers, 4-phase)

10

11

12

0000h (0 loop followers, Stand-

alone)

13

14

15

0001h (1 loop follower, 2-phase)

0002h (2 loop followers, 3-phase)

0003h (3 loop followers, 4-phase)

7.5.2.3 Programming VSEL

The resistor divider ratio for VSEL programs the (21h) VOUT_COMMAND range, (29h) VOUT_SCALE_LOOP

divider, (2Bh) VOUT_MIN, and (24h) VOUT_MAX levels according to the following tables.

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Select the resistor divider code that contains the desired nominal boot voltage within the range of V_OUTbetween

minimum V_OUTand maximum V_OUT. For voltages from 0.5 V to 1.25 V, a single resistor to ground or a resistor

divider can be used.

表7-12. VSEL Resistor Divider Code for Programming

NOMINAL BOOT VOLTAGE RANGE

RESISTOR DIVIDER

CODE

MINIMUM V_OUT

MAXIMUM V_OUT

RESOLUTION

EEPROM (0.8V)

N/A

Float

None

0

0.5

0.6

0.75

0.9

1.05

1.2

1.5

1.8

2.1

2.4

3.0

3.6

4.2

3.6

4.2

4.8

5.4

1.25

0.75

0.9

1.05

1.2

1.5

1.8

2.1

2.4

3.0

3.6

4.2

4.8

4.2

4.8

5.4

6.0

0.050

0.010

0.020

0.040

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

With the resistor divider code selected for the range of VOUT, select the bottom resistor code with the (21h)

VOUT_COMMAND Offset and (21h) VOUT_COMMAND step from Programming VSEL.

表7-13. VSEL Resistor to AGND Code for Programming

RESISTOR DIVIDER VOUT_SCALE

VOUT_MIN

VOUT_MAX

VOUT_COMMAND

VOUT_COMMAND STEP (V)

CODE

_LOOP

OFFSET (V)

0.5

EEPROM (0.5)

EEPROM (1.5)

EEPROM

(0.80)

1.0

Short to AGND

N/A

Float

0.5

1

1.5

3

N/A

None

0

0.50

0.6

0.050

0.010

0.020

0.040

0.5

1

0.5

0.75

0.9

2

0.5

3

0.5

1.05

1.2

4

0.25

0.125

5

1

3

1.5

6

1

3

1.8

7

1

3

2.1

8

2

6

2.4

9

2

6

3.0

10

11

12

2

6

3.6

2

6

4.2

2

6

3.6

English Data Sheet: SLUSF26

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表7-13. VSEL Resistor to AGND Code for Programming (continued)

RESISTOR DIVIDER VOUT_SCALE

VOUT_MIN

VOUT_MAX

VOUT_COMMAND

VOUT_COMMAND STEP (V)

CODE

_LOOP

0.125

OFFSET (V)

13

2

6

4.2

4.8

5.4

0.040

14

15

To calculate the resistor to AGND code, subtract the (21h) VOUT_COMMAND offset from the target output

voltage and divide by the (21h) VOUT_COMMAND step.

V_OUT- VOUT_COMMAND(Offset)

Code =

VOUT _COMMAND(Step)

(8)

7.5.2.4 Programming ADRSEL

The resistor divider for the ADRSEL pin selects the range of PMBus Addresses and SYNC direction for the

TPS546D24S. For Stand Alone devices with only one device supporting a single output voltage, the ADRSEL

divider also selects the Phase Shift between SYNC and the switch node.

表7-14. ADRSEL Resistor Divider Code for and SYNC_IN Programming

RESISTOR DIVIDER

CODE

DEVICE_ADDRESS

SYNC IN / SYNC OUT

STACK_CONFIG = 0x0000 (STAND-ALONE

ONLY)

Range

0x7F (127d)

EEPROM (0x24h / 36d)

16d - 31d

PHASE SHIFT

INTERLEAVE

0x0020

0x0040

0x0041

0x0031

0x0042

0x0032

0x0043

0x0020

0x0042

—

Short to AGND

Auto Detect

Auto detect

Sync in

0

Float

None

0

16d - 31d

0

1

32d - 47d

Sync in

0

2

16d - 31d

Sync in

90

3

32d - 47d

Sync in

90

4

16d - 31d

Sync in

120

180

240

270

0

5

32d - 47d

Sync in

6

16d - 31d

Sync in

7

32d - 47d

Sync in

8

16d - 31d

Sync in

9

32d - 47d

Sync in

10

11

12

13

14

15

16d - 31d

Sync in

32d - 47d

Sync in

16d - 31d

Sync out

32d - 47d

0

16d - 31d

180

32d - 47d

The resistor to AGND for ADRSEL programs the device PMBus loop follower address according to 表7-15:

表7-15. ADRSEL Resistor to AGND Code for Programming

RESISTOR TO AGND CODE

DEVICE ADDRESS (16-31

RANGE)

DEVICE ADDRESS (32-47

RANGE)

0

1

2

0x10h (16d)

0x11h (17d)

0x12h (18d)

0x20h (32d)

0x21h (33d)

0x22h (34d)

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表7-15. ADRSEL Resistor to AGND Code for Programming (continued)

RESISTOR TO AGND CODE

DEVICE ADDRESS (16-31

RANGE)

DEVICE ADDRESS (32-47

RANGE)

3

4

0x13h (19d)

0x14h (20d)

0x15h (21d)

0x16h (22d)

0x17h (23d)

0x18h (24d)

0x19h (25d)

0x1Ah (26d)

0x1Bh (27d)

0x1Ch (28d)

0x1Dh (29d)

0x1Eh (30d)

0x1Fh (31d)

0x23h (35d)

0x24h (36d)

0x25h (37d)

0x26h (38d)

0x27h (39d)

0x48h (72d)

0x29h (41d)

0x2Ah (42d)

0x2Bh (43d)

0x2Ch (44d)

0x2Dh (45d)

0x2Eh (46d)

0x2Fh (47d)

5

6

7

8

9

10

11

12

13

14

15

备注

When a TPS546D24S device is configured as the loop controller of a multi-phase stack, the device

always occupies the zero-degree position in (37h) INTERLEAVE, but the ADRSEL resistor divider can

still be used to select Auto Detect, Forced SYNC_IN, and Forced SYNC_OUT. When the loop

controller of a multi-phase stack is configured for SYNC_IN, all devices of the stack remain disabled

until a valid external SYNC signal is provided.

7.5.2.5 Programming MSEL2 for a Loop Follower Device (GOSNS Tied to BP1V5)

Configuring a TPS546D24S device as a loop follower disables all pinstraps except MSEL2, which programs

(37h)

INTERLEAVE

for

stacking

and

(ECh)

MFR_SPECIFIC_28

(STACK_CONFIG),

(4Ah)

IOUT_OC_WARN_LIMIT, and (46h) IOUT_OC_FAULT_LIMIT with a single resistor to AGND. Note that the loop

controller is always device 0.

表7-16. Loop Follower MSEL2 Resistor to AGND Code for and Programming

RESISTOR TO AGND

CODE

DEVICE NUMBER, NUMBER OF

PHASES

IOUT_OC_WARN_LIMIT (A) /

IOUT_OC_FAULT_LIMIT (A)

Short

Float

6

Device 1, 2-phase

Device1, 2-phase

Device 1, 3-phase

Device 2, 3-phase

Device 1, 4-phase

Device 2, 4-phase

Device 3, 4-phase

40/52

30/39

40/52

30/39

40/52

30/39

40/52

30/39

40/52

30/39

40/52

30/39

40/52

30/39

7

4

5

8

9

2

3

14

15

10

11

44

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备注

During the power-on sequence, device 0 (stack loop controller) reads back phase information from all

connected loop followers, if any loop follower phase response does not match the (ECh)

MFR_SPECIFIC_28 (STACK_CONFIG) results of the loop controller, the converter sets the POR fault

bit in (80h) STATUS_MFR_SPECIFIC but does not allow conversion. After all connected devices

respond to Device 0, Device 0 passes remaining pin-strap information to the loop followers to ensure

matched programming during operation. Adding an additional phase requires adjusting the MSEL2

resistors on the loop controller device and the MSEL2 resistor to ground on all other loop follower

devices.

7.5.2.6 Pin-Strapping Resistor Configuration

表 7-17 and 表 7-18 provide the bottom resistor (pin to AGND) values in ohms, and the top resistor (pin to

BP1V5) values in ohms. Select the column with the desired R2G code in the top row and the row with the

desired resistor divider code in the left most column. The Pin-to-AGND resistor value is the resistor value in the

highlighted row in the first column under the desired R2G code. The Pin-to-BP1V5 resistor value, if used, is the

resistor value in the row starting with the desired divider code in the left most column under the desired R2G

code and resistor.

表7-17. Pin-Strapping Resistor (Ω) Table for R2G Codes 0-7

R2G code

0

1

2

3

4

5

6

7

4640

5620

6810

8250

10000

12100

14700

17800

Rbot →

Divider Code

Resistor to BP1V5 Value (Ω)

(↓)

0

1

21500

15400

11500

9090

7150

5620

4640

3830

3160

2610

2050

1620

1270

953

26100

18700

14000

11000

8660

6810

5620

4640

3830

3160

2490

1960

1540

1150

866

31600

22600

16900

13300

10500

8250

6810

5620

4640

3830

3010

2370

1870

1400

1050

750

38300

27400

20500

16200

12700

10000

8250

6810

5620

4640

3650

2870

2260

1690

1270

909

46400

33200

24900

19600

15400

12100

10000

8250

56200

40200

30100

23700

18700

14700

12100

10000

8250

68100

48700

36500

28700

22600

17800

14700

12100

10000

8250

82500

59000

44200

34800

27400

21500

17800

14700

12100

10000

7870

2

3

4

5

6

7

8

6810

9

5620

6810

10

11

12

13

14

15

4420

5360

6490

3480

4220

5110

6190

2740

3320

4020

4870

2050

2490

3010

3650

715

1540

1870

2260

2740

511

619

1100

1330

1620

1960

表7-18. Pin-Strapping Resistor (Ω) Table for R2G Codes 8-15

R2G code

8

9

10

11

12

13

14

15

21500

26100

31600

38300

46400

56200

68100

82500

Rbot →

Divider Code

Resistor to BP1V5 Value (Ω)

(↓)

0

1

2

3

100000

71500

53600

42200

121000

86600

64900

51100

147000

105000

78700

61900

178000

127000

95300

75000

215000

154000

115000

90900

261000

187000

140000

110000

316000

226000

169000

133000

402000

274000

205000

162000

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表7-18. Pin-Strapping Resistor (Ω) Table for R2G Codes 8-15 (continued)

4

5

33200

26100

21500

17800

14700

12100

9530

40200

31600

26100

21500

17800

14700

11500

9090

48700

38300

31600

26100

21500

17800

14000

11000

8660

59000

46400

38300

31600

26100

21500

16900

13300

10500

7870

71500

56200

46400

38300

31600

26100

20500

16200

12700

9530

86600

68100

56200

46400

38300

31600

24900

19600

15400

11500

8660

105000

82500

68100

56200

46400

38300

30100

23700

18700

14000

10500

7500

127000

100000

82500

68100

56200

46400

26500

28700

22600

16900

12700

9090

6

7

8

9

10

11

12

13

14

15

7500

5900

7150

4420

5360

6490

3320

4020

4870

5900

7150

2370

2870

3480

4220

5110

6190

English Data Sheet: SLUSF26

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7.6 Register Maps

7.6.1 Conventions for Documenting Block Commands

According to the SMBus specification, block commands are transmitted across the PMBus interface in

ascending order. The description below shows the convention this document follows for documenting block

commands.

This document follows the convention for byte ordering of block commands:

When block values are listed as register map tables, they are listed in byte order from top to bottom starting with

Byte N and ending with Byte 0.

• Byte 0 (first byte sent) corresponds to bits 7:0.

• Byte 1 (second byte sent) corresponds to bits 15:8.

• Byte 2 (third byte sent) corresponds to bits 23:16.

• …and so on

When block values are listed as text in hexadecimal, they are listed in byte order, from left to right, starting with

Byte 0 and ending with Byte N with a space between each byte of the value. In block 54 49 54 6D 24 41h, the

byte order is:

• Byte 0, bits 7:0, = 54h

• Byte 1, bits 15:8, = 49h

• Byte 2, bits 23:16, = 6Dh

• Byte 3, bits 31:24, = 24h

• Byte 4, bits 39:32, = 41h

图7-8. Block Command Byte Ordering

47

46

45

44

43

42

41

40

RW

Byte N

Byte …

Byte 3

Byte 2

Byte 1

Byte 0

39

38

37

36

35

34

33

32

RW

31

30

29

28

27

26

25

24

RW

23

22

21

20

19

18

17

16

RW

15

14

13

12

11

10

9

8

RW

7

6

5

4

3

2

1

0

RW

LEGEND: R/W = Read/Write; R = Read only

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7.6.2 (01h) OPERATION

CMD Address

Write Transaction:

Read Transaction:

Format:

01h

Write Byte

Read Byte

Unsigned Binary (1 byte)

Phased:

No

NVM Back-up:

Updates:

No

On-the-fly

The (01h) OPERATION command is used to enable or disable power conversion, in conjunction input from the

enable pins, according to the configuration of the (02h) ON_OFF_CONFIG command. It is also used to set the

output voltage to the upper or lower MARGIN levels, and select soft-stop.

图7-9. (01h) OPERATION Register Map

7

6

5

4

3

2

1

0

R

0

RW

ON_OFF

SOFT_OFF

MARGIN

TRANSITION

LEGEND: R/W = Read/Write; R = Read only

表7-19. Register Field Descriptions

Bit

Field

Access

Reset

Description

7

ON_ OFF

RW

0b

Enable/disable power conversion when the (02h) ON_OFF_CONFIG command is

configured to require input from the CMD bit for output control. Note that there can

be several other requirements that must be satisfied before the power conversion

can begin (for example, input voltages above UVLO thresholds, enable pins high if

required by (02h) ON_OFF_CONFIG and so forth).

0b: Disable power conversion.

1b: Enable power conversion and enable Ignore Faults on MARGIN.

6

SOFT_ OFF

RW

0b

This bit controls the turnoff profile when (02h) ON_OFF_CONFIG is configured to

require input from the CMD bit for output voltage control and OPERATION bit 7

transitions from 1b to 0b is ignored when bit 7 is 1b.

0b: Immediate Off. Power conversion stops immediately and the power stage is

forced to a high-Z state.

1b: Soft Off. Power conversion continues for the TOFF_ DELAY time, then the

output voltage is ramped down to 0 V at a slew rate according to TOFF_ FALL.

After the output voltage reaches 0 V, power conversions stops.

5:2

MARGIN

0000b

Sets the margin state.

0000b, 0001b, 0010b: Margin OFF. Output voltage target is (21h)

VOUT_COMMAND, OV/UV faults behave normally per their respective fault

response settings 0.

0101b: Margin Low (Ignore Fault if bit 7 is 1b). Output voltage target is

VOUT_MARGIN_LOW. OV/UV faults are ignored and do not trigger shut-down or

STATUS updates.

0110b: Margin Low (Act on Fault). Output voltage target is (26h)

VOUT_MARGIN_LOW. OV/UV faults trigger per their respective fault response

settings.

1001b: Margin High (Ignore Fault). Output voltage target is VOUT_MARGIN_HIGH.

OV/UV trigger are ignored and do not trigger shut-down or STATUS update.

1010b: Margin High (Act on Fault). Output voltage target is (25h)

VOUT_MARGIN_HIGH. OV/UV trigger per their respective fault response settings.

Other: Invalid/Unsupported data

1

0

TRANSITIO

N

R

0b

Not used and always set to 0.

Reserved

Not used and always set to 0.

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Attempts to write (01h) OPERATION to any value other than those listed above will be considered invalid/

unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits, and notifying

the host according to the PMBus 1.3.1 Part II specification, section 10.9.3.

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7.6.3 (02h) ON_OFF_CONFIG

CMD Address

Write Transaction:

Read Transaction:

Format:

02h

Write Byte

Read Byte

Unsigned Binary (1 byte)

No

Phased:

NVM Back-up:

Updates:

EEPROM

On-the-fly

The (02h) ON_OFF_CONFIG command configures the combination of enable pin input and serial bus

commands needed to enable/disable power conversion. This includes how the unit responds when power is

applied to PVIN.

图7-10. (02h) ON_OFF_CONFIG Register Map

7

R

0

6

R

0

5

R

0

4

3

2

1

0

RW

PU

RW

CMD

RW

CP

RW

POLARITY

DELAY

LEGEND: R/W = Read/Write; R = Read only

表7-20. Register Field Descriptions

Bit

7:5

4

Field

Reserved

PU

Access

R

Reset

000b

NVM

Description

Not used and always set to 0.

RW

0b: Unit starts power conversion any time the input power is present regardless of

the state of the CONTROL pin.

1b: Act on CONTROL. (01h) OPERATION command to start/stop power

conversion, or both.

3

2

CMD

CP

RW

NVM

0b: Ignore (01h) OPERATION Command to start/stop power conversion.

1b: Act on (01h) OPERATION Command (and CONTROL pin if configured by CP)

to start/stop power conversion.

0b: Ignore CONTROL pin to start/stop power conversion. The UVLO function of the

EN/UVLO pin is not active when CONTROL pin is ignored.

1b: Act on CONTROL pin (and (01h) OPERATION Command if configured by bit

[3]) to start/stop power conversion.

1

0

POLARITY

DELAY

RW

NVM

0b: CONTROL pin has active low polarity. The UVLO function of the EN/UVLO pin

cannot be used when CONTROL has active load polarity.

1b: CONTROL pin has active high polarity.

0b: When power conversion is commanded OFF by the CONTROL pin (must be

configured to respect the CONTROL pin as above), continue regulating for the

(64h) TOFF_DELAY time, then ramp the output voltage to 0 V, in the time defined

by (65h) TOFF_FALL.

1b: When power conversion is commanded OFF by the CONTROL pin (must be

configured to respect the CONTROL pin as above), stop power conversion

immediately.

For the purposes of (02h) ON_OFF_CONFIG, the device pin EN/UVLO is the CONTROL pin.

Attempts to write (02h) ON_OFF_CONFIG to any value other than those explicitly listed above will be

considered invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status

bits, and notifying the host according to the PMBus 1.3.1 Part II specification, section 10.9.3.

English Data Sheet: SLUSF26

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7.6.4 (03h) CLEAR_FAULTS

CMD Address

Write Transaction:

Read Transaction:

Format:

03h

Send Byte

N/A

Data-less

Yes

Phased:

NVM Back-up:

Updates:

No

On-the-fly

CLEAR_FAULTS is a phased command used to clear any fault bits that have been set. This command

simultaneously clears all bits in all status registers of the selected phase, or all phases if PHASE = FFh. At the

same time, the device releases its SMB_ALERT# signal output if SMB_ALERT# is asserted. CLEAR_FAULTS is

a write-only command with no data.

The CLEAR_FAULTS command does not cause a unit that has latched off for a fault condition to restart. If the

fault is still present when the bit is cleared, the fault bit is immediately set again and the host is notified by the

usual means.

If the device responds to an Alert Response Address (ARA) from the host, it will clear SMB_ALERT# but not the

offending status bit or bits (as it has successfully notified the host and then expects the host to handle the

interrupt appropriately). The original fault and any from other sources that occur between the initial assertion of

SMB_ALERT# and the successful response of the device to the ARA are cleared (through CLEAR_FAULTS,

OFF-ON toggle, or power reset) before any of these sources are allowed to re-trigger SMB_ALERT#. However,

fault sources which only become active post-ARA trigger SMB_ALERT#.

图7-11. (03h) CLEAR_FAULTS Register Map

7

6

5

4

3

2

1

0

W

CLEAR_FAULTS

LEGEND: R/W = Read/Write; R = Read only

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7.6.5 (04h) PHASE

CMD Address

Write Transaction:

Read Transaction:

Format:

04h

Write Byte

Read Byte

Unsigned Binary (1 byte)

Phased:

No

NVM Back-up:

Updates:

No

On-the-fly

The PHASE command provides the ability to configure, control, and monitor individual phases. Each PHASE

contains the Operating Memory and User Store and Default Store for each phase output. The phase selected by

the PHASE command will be used for all subsequent phase-dependent commands. The phase configuration

needs to be established before any phase-dependent command can be successfully executed.

In the TPS546D24S, each PHASE is a separate device. The loop and PMBus loop controller device, GOSNS/

FLWR connected to ground, will always be PHASE = 00h. loop follower devices, GOSNS/FLWR connected to

BP1V5, have their phase assignment defined by their phase position, as defined by INTERLEAVE or MSEL2

图7-12. (04h) PHASE Register Map

7

6

5

4

3

2

1

0

RW

PHASE

LEGEND: R/W = Read/Write; R = Read only

表7-21. Register Field Descriptions

Bit

Field

Access

Reset

Description

7:0

PHASE

RW

FFh

00h: All commands address Phase 1.

01h: All commands address Phase 2.

02h: All commands address Phase 3.

03h: All commands address Phase 4.

04h-FEh: Unsupported/Invalid data

FFh: Commands are addressed to all phases as a single entity. See the following

text for more information.

The range of valid data for PHASE also depends on the phase configuration. Attempts to write (04h) PHASE to

a value not supported by the current phase configuration will be considered invalid/unsupported data and cause

the TPS546D24S to respond by flagging the appropriate status bits and notifying the host according to the

PMBus 1.3.1 Part II specification, section 10.9.3.

English Data Sheet: SLUSF26

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7.6.6 (10h) WRITE_PROTECT

CMD Address

Write Transaction:

Read Transaction:

Format:

10h

Write Byte

Read Byte

Unsigned Binary (1 byte)

No

Phased:

NVM Back-up:

Updates:

EEPROM

On-the-fly

The WRITE_PROTECT command controls writing to the PMBus device. The intent of this command is to

provide protection against accidental changes; it has one data byte that is described below. This command does

NOT provide protection against deliberate or malicious changes to a configuration or operation of the device. All

supported commands can have their parameters read, regardless of the WRITE_PROTECT settings.

图7-13. (10h) WRITE_PROTECT Register Map

7

6

5

4

3

2

1

0

RW

WRITE_PROTECT

LEGEND: R/W = Read/Write; R = Read only

表7-22. Register Field Descriptions

Bit

Field

Access

Reset

Description

7:0

WRITE_

RW

NVM

00h: Enable writes to all commands.

PROTECT

20h: Disables all write access except to the WRITE_ PROTECT, OPERATION,

ON_ OFF_ CONFIG, STORE_USER_ALL, and VOUT_ COMMAND commands.

40h: Disables all WRITES except to the WRITE_ PROTECT, OPERATION, and

STORE_USER_ALL commands.

80h: Disables all WRITES except to the WRITE_ PROTECT and

STORE_USER_ALL commands.

Other: Invalid/Unsupported data

Attempts to write (10h) WRITE_PROTECT to any invalid value as specified above will be considered invalid/

unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits, and notifying

the host according to the PMBus 1.3.1 Part II specification, section 10.9.3.

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7.6.7 (15h) STORE_USER_ALL

CMD Address

Write Transaction:

Read Transaction:

Format:

15h

Send Byte

N/A

Data-less

Phased:

No, PHASE = FFh only

NVM Back-up:

Updates:

No

Not recommended for on-the-fly-use, but not explicitly blocked

The STORE_USER_ALL command instructs the PMBus device to copy the entire contents of the Operating

Memory to the matching locations in the non-volatile User Store memory. Any items in Operating Memory that do

not have matching locations in the User Store are ignored.

NVM Store operations are not recommended while the output voltages are in regulation, although the user is not

explicitly prevented from doing so, as interruption can result in a corrupted NVM. PMBus commands issued

during this time can cause long clock stretch times, or simply be ignored. TI recommends disabling regulation,

and waiting a minimum of 100 ms before continuing, following issuance of NVM store operations.

To prevent storing mismatched register values to NVM, STORE_USER_ALL must not be used unless PHASE =

FFh.

图7-14. (15h) STORE_USER_ALL Register Map

7

6

5

4

3

2

1

0

W

STORE_USER_ALL

LEGEND: R/W = Read/Write; R = Read only

English Data Sheet: SLUSF26

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7.6.8 (16h) RESTORE_USER_ALL

CMD Address

Write Transaction:

Read Transaction:

Format:

16h

Send Byte

N/A

Data-less

Phased:

No, PHASE = FFh only

NVM Back-up:

Updates:

No

Disables Regulation during RESTORE

The RESTORE_USER_ALL command instructs the PMBus device to disable operation and copy the entire

contents of the non-volatile User Store memory to the matching locations in the Operating Memory, then

Overwrite Operating Memory of any commands selected in PIN_DETECT_OVERRIDE with their last read pin-

detected values. The values in the Operating Memory are overwritten by the value retrieved from the User Store

and Pin Detection. Any items in User Store that do not have matching locations in the Operating Memory are

ignored.

To prevent storing mismatched register values to NVM, RESTORE_USER_ALL must not be used unless PHASE

= FFh.

图7-15. (16h) RESTORE_USER_ALL Register Map

7

6

5

4

3

2

1

0

W

RESTORE_USER_ALL

LEGEND: R/W = Read/Write; R = Read only

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7.6.9 (19h) CAPABILITY

CMD Address

Write Transaction:

Read Transaction:

Format:

19h

N/A

Read Byte

Unsigned Binary (1 byte)

Phased:

No

NVM Back-up:

Updates:

No

N/A

This command provides a way for the host to determine the capabilities of this PMBus device. This command is

read-only and has one data byte formatted as below.

图7-16. (19h) CAPABILITY Register Map

7

R

6

5

4

3

2

1

R

0

R

0

R

PEC

SPEED

ALERT

FORMAT

AVSBUS

LEGEND: R/W = Read/Write; R = Read only

表7-23. Register Field Descriptions

Bit

7

Field

PEC

Access

Reset

Description

R

1b

1b: Packet Error Checking is supported.

10b: Maximum supported bus speed is 1 MHz.

6:5

4

SPEED

ALERT

10b

1b

1b: The device has an SMB_ALERT# pin and supports the SMBus Alert Response

Protocol.

3

2

FORMAT

AVSBUS

Reserved

R

0b

0b: Numeric format is LINEAR or DIRECT.

0b: AVSBus is NOT supported.

1:0

00b

Reserved and always set to 0.

Attempts to write (19h) CAPABILITY to any value will be considered invalid/unsupported data and cause the

TPS546D24S to respond by flagging the appropriate status bits and notifying the host according to the PMBus

1.3.1 Part II specification, section 10.9.3.

English Data Sheet: SLUSF26

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7.6.10 (1Bh) SMBALERT_MASK

CMD Address

Write Transaction:

Read Transaction:

Format:

1Bh

Write Word

Block-Write/Block-Read Process Call

Write: Unsigned Binary (2 bytes)Read: Unsigned Binary (1 byte)

No, Only PHASE = FFh is supported

EEPROM

Phased:

NVM Back-up:

Updates:

On-the-fly

The SMBALERT_MASK command can be used to prevent a warning or fault condition from asserting the

SMBALERT# signal. Setting a MASK bit does not prevent the associated bit in the STATUS_CMD from being

set, but prevents the associated bit in the STATUS_CMD from asserting SMB_ALERT#. See Reference [3] for

more information on the command format. The following register descriptions describe the individual mask bits

available.

SMBALERT_MASK Write Transaction = Write Word. CMD = 1Bh, Low =STATUS_CMD, High=MASK

SMBALERT_MASK Read Transaction = Block-Write/Block-Read Process Call. Write 1 byte block with

STATUS_CMD, read 1 byte block.

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7.6.11 (1Bh) SMBALERT_MASK_VOUT

CMD Address

Write Transaction:

Read Transaction:

Format:

1Bh (with CMD byte = 7Ah)

Write Word

Block-Write/Block-Read Process Call

Unsigned Binary (1 byte)

No, Only PHASE = FFh is supported

EEPROM

Phased:

NVM Back-up:

Updates:

On-the-fly

SMBALERT_MASK bits for the STATUS_VOUT command

图7-17. (1Bh) SMBALERT_MASK_VOUT Register Map

7

6

5

4

3

2

1

0

RW

R

mVOUT_MINM

AX

mVOUT_OVF mVOUT_OVW mVOUT_UVW mVOUT_UVF

LEGEND: R/W = Read/Write; R = Read only

mTON_MAX

0

表7-24. Register Field Descriptions

Bit

Field

Access

Reset

Description

7

mVOUT_

OVF

RW

NVM

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

6

5

mVOUT_

OVW

RW

R

NVM

00b

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

mVOUT_

UVW

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

4

mVOUT_

UVF

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

3

mVOUT_

MINMAX

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

2

mTON_

MAX

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

1:0

Not

Not supported and always set to 00b.

supported

English Data Sheet: SLUSF26

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7.6.12 (1Bh) SMBALERT_MASK_IOUT

CMD Address

Write Transaction:

Read Transaction:

Format:

1Bh (with CMD byte = 7Bh)

Write Word

Block-Write/Block-Read Process Call

Unsigned Binary (1 byte)

No, Only PHASE = FFh is supported

EEPROM

Phased:

NVM Back-up:

Updates:

On-the-fly

SMBALERT_MASK bits for STATUS_IOUT

图7-18. (1Bh) SMBALERT_MASK_IOUT Register Map

7

6

R

0

5

4

3

R

0

2

R

0

1

R

0

R

0

RW

R

mIOUT_OCF

mIOUT_OCW

mIOUT_UCF

LEGEND: R/W = Read/Write; R = Read only

表7-25. Register Field Descriptions

Bit

Field

Access

Reset

Description

7

mIOUT_

OCF

RW

NVM

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

6

5

Not

supported

R

0b

NVM

0b

Not supported

mIOUT_

OCW

RW

R

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

4

mIOUT_UC

F

1b: SMBALERT can NOT assert due to this condition.

3

Not

supported

Not supported

2:0

Not

RW

0b

supported

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7.6.13 (1Bh) SMBALERT_MASK_INPUT

CMD Address

Write Transaction:

Read Transaction:

Format:

1Bh (with CMD byte = 7Ch)

Write Word

Block-Write/Block-Read Process Call

Unsigned Binary (1 byte)

No, Only PHASE = FFh is supported

EEPROM

Phased:

NVM Back-up:

Updates:

On-the-fly

SMBALERT_MASK bits for STATUS_INPUT

图7-19. (1Bh) SMBALERT_MASK_INPUT Register Map

7

6

5

4

R

0

3

2

R

0

1

R

0

R

0

R

0

R

0

R

0

RW

mLOW_VIN

LEGEND: R/W = Read/Write; R = Read only

表7-26. Register Field Descriptions

Bit

Field

Access

Reset

Description

7

Not

R

0b

Not supported

supported

6

5

4

3

2

1

0

Not

supported

R

0b

Not supported

Not

supported

Not

supported

R

0b

mLOW_ VIN

RW

R

NVM

0b

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

Not

supported

Not supported

Not

supported

R

0b

Not

R

0b

supported

English Data Sheet: SLUSF26

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7.6.14 (1Bh) SMBALERT_MASK_TEMPERATURE

CMD Address

Write Transaction:

Read Transaction:

Format:

1Bh (with CMD byte = 7Dh)

Write Word

Block-Write/Block-Read Process Call

Unsigned Binary (1 byte)

No, Only PHASE = FFh is supported

EEPROM

Phased:

NVM Back-up:

Updates:

On-the-fly

SMBALERT_MASK bits for STATUS_TEMPERATURE

图7-20. (1Bh) SMBALERT_MASK_TEMPERATURE Register Map

7

6

5

R

0

4

R

0

3

R

0

2

R

0

1

R

0

R

0

RW

mOTF

mOTW

LEGEND: R/W = Read/Write; R = Read only

表7-27. Register Field Descriptions

Bit

Field

Access

Reset

Description

7

mOTF

RW

NVM

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

6

mOTW

RW

R

NVM

0d

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

5:0

Not

Not supported and always set to 000000b.

supported

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7.6.15 (1Bh) SMBALERT_MASK_CML

CMD Address

Write Transaction:

Read Transaction:

Format:

1Bh (with CMD byte = 7Eh)

Write Word

Block-Write/Block-Read Process Call

Unsigned Binary (1 byte)

No, Only PHASE = FFh is supported

EEPROM

Phased:

NVM Back-up:

Updates:

On-the-fly

SMBALERT_MASK bits for STATUS_CML

图7-21. (1Bh) SMBALERT_MASK_CML Register Map

7

6

5

4

3

2

R

0

1

0

R

0

RW

R

RW

mIVC

mIVD

mPEC

mMEM

0

mCOMM

LEGEND: R/W = Read/Write; R = Read only

表7-28. Register Field Descriptions

Bit

Field

mIVC

Access

Reset

Description

7

6

RW

NVM

00b

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

mIVD

mPEC

mMEM

RW

R

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

5

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

4

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

3:2

1

Not

supported

Not supported

mCOMM

RW

R

NVM

0b

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

0

Not

Not supported

supported

English Data Sheet: SLUSF26

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7.6.16 (1Bh) SMBALERT_MASK_OTHER

CMD Address

Write Transaction:

Read Transaction:

Format:

1Bh (with CMD byte = 7Fh)

Write Word

Block-Write/Block-Read Process Call

Unsigned Binary (1 byte)

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

SMBALERT_MASK bits for STATUS_OTHER

图7-22. (1Bh) SMBALERT_MASK_OTHER Register Map

7

6

5

4

3

2

1

0

R

mFIRST_

TO_ALERT

0

LEGEND: R/W = Read/Write; R = Read only

表7-29. Register Field Descriptions

Bit

Field

Access

Reset

Description

7:1

Not

R

0h

Not supported

supported

0

mFIRST_

TO_ ALERT

R

1b

The FIRST_ TO_ ALERT bit does not in itself generate SMBALERT assertion,

hence this bit is hard-coded to 1b (source is masked).

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7.6.17 (1Bh) SMBALERT_MASK_MFR

CMD Address

Write Transaction:

Read Transaction:

Format:

1Bh (with CMD byte = 80h)

Write Word

Block-Write/Block-Read Process Call

Unsigned Binary (1 byte)

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

SMBALERT_MASK bits for STATUS_MFR

图7-23. (1Bh) SMBALERT_MASK_MFR Register Map

7

6

5

R

0

4

R

0

3

2

1

0

R

0

RW

mPOR

mSELF

mRESET

mBCX

mSYNC

LEGEND: R/W = Read/Write; R = Read only

表7-30. Register Field Descriptions

Bit

Field

Access

Reset

Description

7

mPOR

RW

NVM

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

6

mSELF

RW

NVM

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

Due to variations in AVIN UVLO, unmasking this bit can result in SMBALERT being

asserted on power up.

5

4

3

2

1

Not

supported

R

0b

Not supported

Not

supported

R

0b

Not supported

mRESET

RW

NVM

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

mBCX

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

mSYNC

0b: SMBALERT can assert due to this condition.

1b: SMBALERT can NOT assert due to this condition.

When the loop controller device of a multi-phase stack is programmed for Auto

Detect SYNC, unmasking this bit can result in a momentary assertion of

SMBALERT when the multi-phase stack is enabled.

0

Not

R

0b

Not supported

supported

64

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7.6.18 (20h) VOUT_MODE

CMD Address

Write Transaction:

Read Transaction:

Format:

20h

Write Byte

Read Byte

Unsigned Binary (1 byte)

Phased:

No

NVM Back-up:

Updates:

EEPROM

Conversion Disabled: on-the-fly, Conversion Enabled: Read Only

The data byte for the VOUT_MODE command is one byte that consists of a three bit Mode and a five bit

Parameter as shown in 图 7-24. The three bit Mode sets whether the device uses the ULINEAR16, Half-

precision IEEE 754 floating point, or VID or DIRECT modes for output voltage related commands. The five bit

Parameter provides more information about the selected mode, such as the ULINEAR16 Exponent or which

manufacturer's VID codes are being used.

图7-24. (20h) VOUT_MODE Register Map

7

6

5

4

3

2

1

0

RW

REL

R

RW

MODE

PARAMETER

LEGEND: R/W = Read/Write; R = Read only

表7-31. Register Field Descriptions

Bit

Field

Access

Reset

Description

7

REL

RW

NVM

0b: Absolute Data Format

1b: Relative Data Format

6:5

4:0

MODE

R

00b

00b: Linear Format (ULINEAR16, SLINEAR16)

Other: Unsuported/Invalid

PARAMETE

R

RW

NVM

MODE = 00b (Linear Format): Specifies the exponent “N”to use with output

voltage related commands, in two’s complement format. Supported exponent

values in the linear mode range from -4 (62.5 mV/LSB) to -12 (0.244 mV/LSB).

Refer to the following text for more information.

Changing VOUT_MODE

Changing VOUT_MODE will force an update to the values of many VOUT related commands to conform to the

updated VOUT_MODE value including Relative versus Absolute mode and the linear Exponent value. When

programming VOUT_MODE in conjunction with other VOUT related commands, VOUT related commands will

be interpreted with the current VOUT_MODE value and converted if VOUT_MODE is later changed.

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7.6.19 (21h) VOUT_COMMAND

CMD Address

Write Transaction:

Read Transaction:

Format:

21h

Write Word

Read Word

ULINEAR16, Absolute Only per VOUT_MODE

Phased:

No

NVM Back-up:

Updates:

EEPROM or Pin Detection

on-the-fly

VOUT_COMMAND causes the device to set its output voltage to the commanded value with two data bytes.

Output voltage changes due to VOUT_COMMAND occur at the rate specified by VOUT_TRANSITION_RATE.

When PGD/RST_B is configured as a RESET# pin in MISC_OPTIONS, assertion of the PGD/RST_B pin causes

the output voltage to return to the VBOOT value, and causes the VOUT_COMMAND value to be updated

accordingly.

图7-25. (21h) VOUT_COMMAND Register Map

15

14

13

12

11

10

9

8

RW

VOUT_COMMAND (High Byte)

7

6

5

4

3

2

1

0

RW

VOUT_COMMAND (Low Byte)

LEGEND: R/W = Read/Write; R = Read only

表7-32. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:0

VOUT_

RW

NVM

Sets the output voltage target via the PMBus interface.

COMMAND

At power up, the reset value of VOUT_COMMAND is derived from either pin-detection on the VSEL pin, or from

the NVM, depending on the VOUT_COMMAND bit in PIN_DETECT_OVERRIDE.

When the VOUT_COMMAND bit in PIN_DETECT_OVERRIDE = 0b, the default value of VOUT_COMMAND is

restored from NVM at Power On Reset or RESTORE_USER_ALL.

When the VOUT_COMMAND bit in PIN_DETECT_OVERRIDE = 1b, the default value of VOUT_COMMAND is

derived from pin-detection on the VSEL pin, at Power-On Reset or RESTORE_USER_ALL.

This default value, whether derived from pin detection, or NVM becomes the “default” output voltage (also

referred to as “VBOOT”), and is stored in RAM separately from the current value of VOUT_COMMAND.

BOOT Voltage Behavior

The RESET_FLT bit in MISC_OPTIONS selects the VOUT_COMMAND behavior following a fault-related

shutdown. When RESET_FLT = 0b, the device will retain the current value of VOUT_COMMAND during

HICCUP after a fault. When RESET_FLT = 1b, VOUT_COMMAND will reset to the last detected VSEL voltage

or the NVM STORED value for VOUT_COMMAND as selected by the VOUT_COMMAND bit in

MISC_OPTIONS.

Data Validity

Writes to VOUT_COMMAND for which the resulting value, including any offset from VOUT_TRIM is greater than

the current VOUT_MAX, or less than the current VOUT_MIN, causes the reference DAC to move to the value

English Data Sheet: SLUSF26

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specified by VOUT_MIN or VOUT_MAX respectively, and causes the VOUT_MAX_MIN_WARNING fault

condition, setting the appropriate bits in STATUS_WORD, STATUS_VOUT and notifying the host per the PMBus

1.3.1 Part II specification, section 10.2.

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7.6.20 (22h) VOUT_TRIM

CMD Address

Write Transaction:

Read Transaction:

Format:

22h

Write Word

Read Word

SLINEAR16, Absolute Only per (20h) VOUT_MODE.

Phased:

No

NVM Back-up:

Updates:

EEPROM

on-the-fly

VOUT_TRIM is used to apply a fixed offset voltage to the output voltage command value. Output voltage

changes due to VOUT_TRIM occur at the rate specified by (27h) VOUT_TRANSITION_RATE.

图7-26. (22h) VOUT_TRIM Register Map

15

14

13

12

11

10

9

8

RW

VOUT_TRIM (High Byte)

7

6

5

4

3

2

1

0

RW

VOUT_TRIM (Low Byte)

LEGEND: R/W = Read/Write; R = Read only

表7-33. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:0

VOUT_

TRIM

RW

See Below

Output voltage offset. SLINEAR16 (two’s complement) format

Limited NVM Back-up

Only 8 bits of NVM backup are provided for this command. While the VOUT_TRIM command follows the (20h)

VOUT_MODE exponent, NVM back-up is stored with an exponent -12 and stored values will be limited to +127

to -128 with an exponent -12 irrespective of (20h) VOUT_MODE.

Data Validity

Referring to the data validity table in (21h) VOUT_COMMAND (reproduced below), the output voltage value

(including any offset from VOUT_TRIM, VOUT_COMMAND, VOUT_MARGIN, …) can not exceed the values

supported by the DAC hardware.

Programming a (21h) VOUT_COMMAND + (22h) VOUT_TRIM value greater than the maximum value

supported by the DAC hardware but less than (24h) VOUT_MAX will result in the regulated output voltage

clamping at the maximum value supported by the DAC hardware without setting the VOUT_MAX_MIN bit in

(7Ah) STATUS_VOUT.

表7-34. VOUT_COMMAND/VOUT_MARGIN + VOUT_TRIM data validity (Linear Format)

VOUT_SCALE_LOOP

INTERNAL DIVIDER

VALID VOUT_COMMAND /MARGIN +

VOUT_TRIM VALUES

1.0

0.5

None

1:1

0.000V to 0.700 V

0.000 V to 1.400 V

0.000 V to 2.800 V

0.000 V to 6.000 V

0.25

0.125

1:3

1:7

English Data Sheet: SLUSF26

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The minimum and maximum valid data values for VOUT_TRIM follow the description in (21h)

VOUT_COMMAND. Attempts to write VOUT_TRIM to any value outside those specified as valid, will be

considered invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status

bits, and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

Writes to VOUT_TRIM for which the resulting output voltage is greater than the current (24h) VOUT_MAX, or

less than the current (2Bh) VOUT_MIN, cause the reference DAC to move to the value specified by (2Bh)

VOUT_MIN or (24h) VOUT_MAX, respectively, and cause the VOUT_MAX_MIN_WARNING fault condition,

setting the appropriate bits in (79h) STATUS_WORD, (7Ah) STATUS_VOUT and notifying the host per the

PMBus 1.3.1 Part II specification, section 10.2.

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7.6.21 (24h) VOUT_MAX

CMD Address

Write Transaction:

Read Transaction:

Format:

24h

Write Word

Read Word

ULINEAR16, Absolute Only per VOUT_MODE

Phased:

No

NVM Back-up:

Updates:

EEPROM or Pin Detection

On-the-fly

The VOUT_MAX command sets an upper limit on the output voltage the unit and can command regardless of

any other commands or combinations. The intent of this command is to provide a safeguard against a user

accidentally setting the output voltage to a possibly destructive level.

图7-27. (24h) VOUT_MAX Register Map

15

14

13

12

11

10

9

8

RW

VOUT_MAX (High Byte)

7

6

5

4

3

2

1

0

RW

VOUT_MAX (Low Byte)

LEGEND: R/W = Read/Write; R = Read only

表7-35. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:0

VOUT_

MAX

RW

NVM

Maximum output voltage. ULINEAR16 absolute per the setting of VOUT_ MODE.

Refer to the following description for data validity.

While conversion is enabled, any output voltage change (including VOUT_COMMAND, VOUT_TRIM, margin

operations) that causes the new target voltage to be greater than the current value of VOUT_MAX will cause the

VOUT_MAX_MIN_WARNING fault condition. This result causes the TPS546D24S to:

• Set to the output voltage to current value of VOUT_MAX, at the slew rate defined by

VOUT_TRANSITION_RATE.

• Set the NONE OF THE ABOVE bit in the STATUS_BYTE.

• Set the VOUT bit in the STATUS_WORD.

• Set the VOUT_MIN_MAX warning bit in STATUS_VOUT.

• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.

Although the scenario is uncommon, note that the same response results if the user attempted to program

VOUT_MAX less than the current output voltage target.

English Data Sheet: SLUSF26

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7.6.22 (25h) VOUT_MARGIN_HIGH

CMD Address

Write Transaction:

Read Transaction:

Format:

25h

Write Word

Read Word

ULINEAR16, per VOUT_MODE

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

The VOUT_MARGIN_HIGH command loads the unit with the voltage to which the output is to be changed when

the OPERATION command is set to “Margin High”. Output voltage transitions during margin operation occur

at the slew rate defined by VOUT_TRANSITION_RATE.

When the MARGIN bits in the OPERATION command indicate “Margin High,”the output voltage is updated to

the value of VOUT_MARGIN_HIGH + VOUT_TRIM.

图7-28. (25h) VOUT_MARGIN_HIGH Register Map

15

14

13

12

11

10

9

8

RW

VOUT_MARGH (High Byte)

7

6

5

4

3

2

1

0

RW

VOUT_MARGH (Low Byte)

LEGEND: R/W = Read/Write; R = Read only

表7-36. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:0

VOUT_

MARGH

RW

NVM

Margin High output voltage. ULINEAR16 relative or absolute per the setting of

VOUT_ MODE

The minimum and maximum valid data values for VOUT_MARGIN_HIGH follow the description in

VOUT_COMMAND. That is, the total combined output voltage, including VOUT_MARGIN_HIGH and

VOUT_TRIM, follow the values allowed by the current VOUT_MAX setting.

Attempts to write (25h) VOUT_MARGIN_HIGH to any value outside those specified as valid will be considered

invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits and

notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

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7.6.23 (26h) VOUT_MARGIN_LOW

CMD Address

Write Transaction:

Read Transaction:

Format:

26h

Write Word

Read Word

ULINEAR16, per VOUT_MODE

Phased:

No

NVM Back-up:

EEPROM

The VOUT_MARGIN_LOW command loads the unit with the voltage to which the output is to be changed when

the OPERATION command is set to “Margin Low”. Output voltage transitions during margin operation occur

at the slew rate defined by VOUT_TRANSITION_RATE.

When the MARGIN bits in the OPERATION command indicate “Margin Low,” the output voltage is updated to

the value of VOUT_MARGIN_LOW + VOUT_TRIM.

图7-29. (26h) VOUT_MARGIN_LOW Register Map

15

14

13

12

11

10

9

8

RW

VOUT_MARGIN_LOW (High Byte)

7

6

5

4

3

2

1

0

RW

VOUT_MARGIN_LOW (Low Byte)

LEGEND: R/W = Read/Write; R = Read only

表7-37. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:0

VOUT_

MARGL

RW

NVM

Margin Low output voltage. ULINEAR16 relative or absolute per the setting of

VOUT_ MODE

The minimum and maximum valid data values for VOUT_MARGIN_LOW follow the description in

VOUT_COMMAND. Attempts to write (26h) VOUT_MARGIN_LOW to any value outside those specified as valid

will be considered invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate

status bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

English Data Sheet: SLUSF26

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7.6.24 (27h) VOUT_TRANSITION_RATE

CMD Address

Write Transaction:

Read Transaction:

Format:

27h

Write Word

Read Word

SLINEAR11 per CAPABILITY

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

The VOUT_TRANSITION_RATE sets the slew rate at which any output voltage changes during normal power

conversion occur. This commanded rate of change does not apply when the unit is commanded to turn on or to

turn off. The units are mV/μs.

图7-30. (27h) VOUT_TRANSITION_RATE Register Map

15

14

13

12

11

10

9

8

RW

VOTR_EXP

VOTR_MAN

7

6

5

4

3

2

1

0

RW

VOTR_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-38. Register Field Descriptions

Bit

Field

Reset

Description

Access

RW

15:11

10:0

VOTR_ EXP

11100b

NVM

Linear format two’s complement exponent. Exponent = -4, LSB = 0.0625 mV/μs

Linear format two’s complement mantissa

VOTR_

MAN

RW

Per the TPS546D24S product specification, the following slew rates are supported (see the table below). Note

that every binary value between the minimum and maximum values is writeable and readable, but that the actual

output voltage slew rate is set to the nearest supported value.

VOUT_TRANSITION RATE can be programmed from 0.067 mV/µs to 15.933 mV/µs.

Attempts to write (27h) VOUT_TRANSITION_RATE to any value outside those specified as valid will be

considered invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status

bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

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7.6.25 (29h) VOUT_SCALE_LOOP

CMD Address

Write Transaction:

Read Transaction:

Format:

29h

Write Word

Read Word

SLINEAR11 per CAPABILITY

No

Phased:

Conversion Disable: on-the-fly. Conversion Enable: hardware update blocked. To update hardware

after write while enabled, store to NVM with STORE_USER_ALL and RESTORE_USER_ALL or

cycle AVIN below UVLO.

Updates:

NVM Back-up:

EEPROM or Pin Detection

VOUT_SCALE_LOOP allows PMBus devices to map between the commanded voltage and the voltage at the

control circuit input. In the TPS546D24S, VOUT_SCALE_LOOP also programs an internal precision resistor

divider so no external divider is required.

图7-31. (29h) VOUT_SCALE_LOOP Register Map

15

14

13

12

11

10

9

8

RW

VOSL_EXP

VOSL_MAN

7

6

5

4

3

2

1

0

RW

VOSL_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-39. Register Field Descriptions

Bit

Field

Access

RW

Reset

11001b

NVM

Description

15:11

10:0

VOSL_ EXP

Linear format two’s complement exponent

Linear format two’s complement mantissa

RW

VOSL_

MAN

Data Validity

Every binary value between the minimum and maximum supported values is writeable and readable. However,

not every combination is supported in hardware. Refer to 表7-40:

表7-40. Accepted Values

VOUT_SCALE_LOOP (DECODED)

Less than or equal to 0.125

0.125 < VOSL ≤0.25

INTERNAL DIVIDER SCALING FACTOR

0.125

0.25

0.5

0.25 < VOSL ≤0.5

Greater than 0.5

1.0

Attempts to write (29h) VOUT_SCALE_LOOP to any value outside those specified as valid will be considered

invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits and

notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

If a (29h) VOUT_SCALE_LOOP value other than a supported Internal Divider Scaling Factor is programmed into

(29h) VOUT_SCALE_LOOP, (21h) VOUT_COMMAND to VREF scale factors are calculated based on the actual

(29h) VOUT_SCALE_LOOP value. (29h) VOUT_SCALE_LOOP values other than supported Internal Divider

English Data Sheet: SLUSF26

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Scaling Factors can produce a mismatch between (21h) VOUT_COMMAND and the actual commanded output

voltage.

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7.6.26 (2Bh) VOUT_MIN

CMD Address

Write Transaction:

Read Transaction:

Format:

2Bh

Write Word

Read Word

ULINEAR16,Absolute Only per VOUT_MODE

Phased:

No

Updates:

on-the-fly

NVM Back-up:

EEPROM or Pin Detection

The VOUT_MIN command sets a lower limit on the output voltage the unit can command regardless of any other

commands or combinations. The intent of this command is to provide a safeguard against a user accidentally

setting the output voltage to a level which will render the load inoperable.

图7-32. (2Bh) VOUT_MIN Register Map

15

14

13

12

11

10

9

8

RW

VOUT_MIN (High Byte)

7

6

5

4

3

2

1

0

RW

VOUT_MIN (Low Byte)

LEGEND: R/W = Read/Write; R = Read only

表7-41. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:0

VOUT_ MIN

RW

NVM

Minimum output voltage. ULINEAR16 absolute per the setting of VOUT_ MODE.

During power conversion, any output voltage change (including VOUT_COMMAND, VOUT_TRIM, margin

operations) that causes the new target voltage to be less than the current value of VOUT_MIN will cause the

VOUT_MAX_MIN_WARNING fault condition. These results cause the TPS546D24S to:

• Set to the output voltage to current value of VOUT_MIN at the slew rate defined by

VOUT_TRANSITION_RATE.

• Set the NONE OF THE ABOVE in the STATUS_BYTE.

• Set the VOUT bit in the STATUS_WORD.

• Set the VOUT_MIN_MAX warning bit in STATUS_VOUT.

• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.

Although the scenario is uncommon, note that the same response results if the user attempted to program

VOUT_MAX greater than the current output voltage target.

Data Validity

The minimum and maximum valid data values for VOUT_MIN follow those of VOUT_MAX. Attempts to write

(2Bh) VOUT_MIN to any value outside those specified as valid will be considered invalid/unsupported data and

cause the TPS546D24S to respond by flagging the appropriate status bits and notifying the host according to the

PMBus 1.3.1 Part II specification section 10.9.3.

English Data Sheet: SLUSF26

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7.6.27 (33h) FREQUENCY_SWITCH

CMD Address

Write Transaction:

Read Transaction:

Format:

33h

Write Word

Read Word

SLINEAR11, per CAPABILITY

No

Phased:

Conversion Disable: on-the-fly. Conversion Enable: hardware update blocked. To update hardware

after write while enabled, store to NVM with STORE_USER_ALL and RESTORE_USER_ALL or

cycle AVIN below UVLO.

Updates:

NVM Back-up:

EEPROM or Pin Detection

FREQUENCY_SWITCH sets the switching frequency of the active channel in kHz.

图7-33. (33h) FREQUENCY_SWITCH Register Map

15

14

13

12

11

10

9

8

RW

FSW_EXP

FSW_MAN

7

6

5

4

3

2

1

0

RW

FSW_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-42. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:11

FSW_ EXP

RW

NVM

Linear format two’s complement exponent

On reset, FSW_EXP is auto-generated based on the switching frequency stored in

NVM.

10:0

FSW_ MAN

RW

NVM

Linear format two’s complement mantissa. Refer to 表7-43.

表7-43. Supported Switching Frequency Settings

FREQUENCY_SWITCH (Decoded)

Effective Switching Frequency (kHz)

Less than 250 kHz

225

275

325

375

450

550

650

750

900

1100

1300

1500

251 ≤FSW < 300 kHz

301 ≤FSW < 350 kHz

351 ≤FSW < 410 kHz

411 ≤FSW < 500 kHz

501 ≤FSW < 600 kHz

601 ≤FSW < 700 kHz

701 ≤FSW < 820 kHz

821 ≤FSW < 1000 kHz

1001 ≤FSW < 1200 kHz

1201 ≤FSW < 1400 kHz

1401 ≤FSW < 1650 kHz

FREQUENCY_SWITCH values greater than 1100 kHz can require higher VDD5 current than can be provided by

the internal AVIN to VDD5 linear regulator. Programming FREQUENCY_SWITCH to a value greater than 1100

kHz without an external source to VDD5 can result in repeated start-up and shut-down attempt.

FRQUENCY_SWITCH values greater than 1100 kHz are not recommended for Stacked Multi-phase operation.

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7.6.28 (35h) VIN_ON

CMD Address

Write Transaction:

Read Transaction:

Format:

35h

Write Word

Read Word

SLINEAR11, per CAPABILITY

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

VIN_ON command sets the value of the input voltage, in Volts, at which the unit must start power conversion.

图7-34. (35h) VIN_ON Register Map

15

14

13

RW

12

11

10

9

8

RW

VON_EXP

VON_MAN

7

6

5

4

3

2

1

0

RW

VON_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-44. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:11

VON_ EXP

RW

11110b

Linear format two’s complement exponent, -2

10:0

VON_ MAN

RW

NVM

Linear format two’s complement mantissa. Refer to the following text for more

information.

Attempts to write (35h) VIN_ON to any value outside those specified as valid will be considered invalid/

unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits and notifying

the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

Command Resolution and NVM Store/Restore Behavior

(35h) VIN_ON and (36h) VIN_OFF have limited hardware range and resolution as well as limited NVM

allocation. While the command will accept any binary value within the valid range, values not exactly represented

by the hardware resolution will be rounded down to the next lower supported threshold for implementation or

upon restore from NVM during Power-On Reset or (16h) RESTORE_USER_ALL. (35h) VIN_ON hardware

supports all values from 2.50 V to 18.25 in 0.25-V steps.

Note that the LOW_VIN fault condition is masked until the sensed input voltage exceeds the VIN_ON threshold

for the first time following a power-on reset. Control/Enable pin toggles and EEPROM store/restore operations

do not reset this masking.

English Data Sheet: SLUSF26

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7.6.29 (36h) VIN_OFF

CMD Address

Write Transaction:

Read Transaction:

Format:

36h

Write Word

Read Word

SLINEAR11, per CAPABILITY

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

(36h) VIN_OFF command sets the value of the PVIN input voltage, in Volts, at which the unit must stop power

conversion. If the Power Conversion Enable conditions as defined by (02h) ON_OFF_CONFIG are met and

PVIN is less than (36h) VIN_OFF, the output off due to low VIN bit in (7Ch) STATUS_INPUT is set.

图7-35. (36h) VIN_OFF Register Map

15

14

13

RW

12

11

10

9

8

RW

R

RW

VOFF_EXP

VOFF_MAN

7

6

5

4

3

2

1

0

RW

VOFF_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-45. Register Field Descriptions

Bit

Field

Access

RW

Reset

11110b

NVM

Description

Linear format two’s complement exponent

Linear format two’s complement mantissa. Refer to the following text.

15:11

10:0

VOFF_ EXP

VOFF_

MAN

RW

Attempts to write (36h) VIN_OFF to any value outside those specified as valid will be considered invalid/

unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits and notifying

the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

Command Resolution and NVM Store/Restore Behavior

(35h) VIN_ON and (36h) VIN_OFF have limited hardware range and resolution as well as limited NVM

allocation. While the command will accept any binary value within the valid range, values not exactly represented

by the hardware resolution will be rounded down to the next lower supported threshold for implementation or

upon restoration from NVM during Power-On Reset or (16h) RESTORE_USER_ALL. (36h) VIN_OFF hardware

supports all values from 2.25 V to 18.25 in 0.25-V steps.

While it is possible to set (36h) VIN_OFF equal to or greater than (35h) VIN_ON, it is not advisable and can

produce rapid enabling and disabling of conversion and undesirable operation.

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7.6.30 (37h) INTERLEAVE

CMD Address

Write Transaction:

Read Transaction:

Format:

37h

Write Word (Single Phase Only)

Read Word

Four Hexadecimal values

No, Read only in Multi-phase stack

On-th-fly

Phased:

Updates:

NVM Back-up:

EEPROM or Pin Detection

INTERLEAVE sets the phase delay between the external SYNC (IN or OUT) and the internal PMW oscillator.

图7-36. (37h) INTERLEAVE Register Map

15

R

14

R

13

12

11

10

9

8

R

RW

Not Used

GROUPID

ORDER

7

6

5

4

3

2

1

0

RW

NUM_GROUP

LEGEND: R/W = Read/Write; R = Read only

表7-46. Register Field Descriptions

Bit

15:12

11:8

7:4

Field

Access

R

Reset

Description

Not Used

GROUPID

0h

Not used, set to b'0000.

Group ID Number. Set to 0h to Fh.

RW

NVM

NUM_GRO

UP

RW

Number in Group, sets the number of phases positions and the phase shift for

each value of ORDER. Set to value 1h to 4h.

3:0

ORDER

RW

NVM

Order within the group. Each value of ORDER adds a phase shift equal to 360° /

NUM_GROUP. Set to value 0h to NUM_GROUP - 1.

表7-47. Supported INTERLEAVE Settings

Number in Group

Order

Phase Position (°)

1

2

3

4

0

1

0

1

2

0

1

2

3

0

180

0

120

240

0

90

180

270

The (37h) INTERLEAVE command is used to arrange multiple devices sharing a common SYNC signal in time.

The phase delay added to each device is equal to 360° / Number in Group × Order. To prevent misaligning the

phases of a multi-phase stack, (37h) INTERLEAVE is read only when the TPS546D24S is configured as part of

a multi-phase stack. The Read/Write status of the (37h) INTERLEAVE command is set based on the state of the

(ECh) MFR_SPECIFIC_28 (STACK_CONFIG) command at power-on and is not updated if (ECh)

MFR_SPECIFIC_28 (STACK_CONFIG) is later changed. If (37h) INTERLEAVE will be used to program the

English Data Sheet: SLUSF26

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phase position of a stand-alone device, the TPS546D24S must be configured as a stand-alone device at power-

on to ensure write capability of the (37h) INTERLEAVE command.

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7.6.31 (38h) IOUT_CAL_GAIN

CMD Address

Write Transaction:

Read Transaction:

Format:

38h

Write Word

Read Word

SLINEAR11, per CAPABILITY

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

(38h) IOUT_CAL_GAIN is used to trim the gain of the output current reported by the READ_IOUT command.

The value is a unitless gain factor applied to the internally sensed current measurement. It defaults to a value of

1.

图7-37. (38h) IOUT_CAL_GAIN Register Map

15

14

13

12

11

10

9

8

RW

IOCG_EXP

IOCG_MAN

7

6

5

4

3

2

1

0

RW

IOCG_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-48. Register Field Descriptions

Bit

Field

Access

RW

Reset

11001b

NVM

Description

15:11

10:0

IOCG_ EXP

IOCG_ MAN

Linear format, two’s complement exponent

Linear format, two’s complement mantissa

RW

Attempts to write (38h) IOUT_CAL_GAIN to any value outside those specified as valid will be considered invalid/

unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits and notifying

the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

Command Resolution and NVM Store/Restore Behavior

The (38h) IOUT_CAL_GAIN command is implemented using the TPS546D24S internal telemetry system. As a

result, the value of this command can be programmed with very high resolution using the linear format. However,

the TPS546D24S provides only limited NVM-backed options for this command. Following a power-cycle or NVM

Store/Restore operation, the value will be rounded to the nearest 1/64 with a maximum supported value of 1.984

(1 63/64).

English Data Sheet: SLUSF26

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7.6.32 (39h) IOUT_CAL_OFFSET

CMD Address

Write Transaction:

Read Transaction:

Format:

39h

Write Word

Read Word

SLINEAR11, per CAPABILITY

Yes

Phased:

NVM Back-up:

Updates:

EEPROM

On-the-fly

IOUT_CAL_OFFSET is used to compensate for offset errors in the READ_IOUT command. Each PHASE in a

stack can apply an independent IOUT_CAL_OFFSET value. The effective IOUT_CAL_OFFSET value for a

stack is equal to the sum of the IOUT_CAL_OFFSET values from all devices in the stack.

图7-38. (39h) IOUT_CAL_OFFSET Register Map

15

14

13

12

11

10

9

8

RW

IOCOS_EXP

IOCOS_MAN

7

6

5

4

3

2

1

0

RW

IOCOS_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-49. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:11

IOCOS_

EXP

RW

11100b

Linear format, two’s complement exponent

Linear format, two’s complement mantissa

10:0

IOCOS_

MAN

RW

NVM

(39h) IOUT_CAL_OFFSET has a programmable range from -8A to +7.9375A for each phase. Attempts to write

(39h) IOUT_CAL_OFFSET to any value outside those specified as valid will be considered invalid/unsupported

data and cause the TPS546D24S to respond by flagging the appropriate status bits and notifying the host

according to the PMBus 1.3.1 Part II specification section 10.9.3.

Command Resolution and NVM Store/Restore Behavior

The (39h) IOUT_CAL_OFFSET command is implemented using the TPS546D24S internal telemetry system. As

a result, the value of this command can be programmed with very high resolution using the linear format.

However, the TPS546D24S only provides limited NVM-backed options for this command. Following a power-

cycle or NVM Store/Restore operation, the value will be restored to one of the supported values, according to the

value present during the last NVM store operation. During operation, updates to this command with higher

resolution, will be supported, and accepted as long as they fall between the minimum and maximum supported

values given.

Phased Command Behavior

PHASE = 00h to 03h: Writes to (39h) IOUT_CAL_OFFSET modify the current sense offset for individual phases.

Reads to (39h) IOUT_CAL_OFFSET return the configured current sense offset for individual phases.

PHASE = FFh: Writes to (39h) IOUT_CAL_OFFSET modify the total current sense offset for all individual

phases. Individual phases will be assigned an IOUT_CAL_OFFSET value equal to the written value divided by

the number of phases. Reads to (39h) IOUT_CAL_OFFSET return the configured current sense offset for

PHASE = 00h times the number of phases.

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7.6.33 (40h) VOUT_OV_FAULT_LIMIT

CMD Address

Write Transaction:

Read Transaction:

Format:

40h

Write Word

Read Word

ULINEAR16 Relative or Absolute per VOUT_MODE

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

The VOUT_OV_FAULT_LIMIT command sets the value of the output voltage measured at the sense or output

pins that causes an output overvoltage fault. VOUT_OV_FAULT_LIMIT sets an over-voltage threshold relative to

the current VOUT_COMMAND. Updates to VOUT_COMMAND do not update the value of

VOUT_OV_FAULT_LIMIT when the absolute format is used. Note that even with VOUT_MODE configured in

absolute format, the true overvoltage fault limit remains relative to the current VOUT_COMMAND.

VOUT_OV_FAULT_LIMIT is active as soon as the TPS546D24S completes its Power-On Reset, even if output

conversion is disabled.

Following

an

overvoltage

fault

condition,

the

TPS546D24S

responds

according

to

VOUT_OV_FAULT_RESPONSE.

图7-39. (40h) VOUT_OV_FAULT_LIMIT Register Map

15

14

13

12

11

10

9

8

RW

VOUT_OVF (High Byte)

7

6

5

4

3

2

1

0

RW

VOUT_OVF (Low Byte)

LEGEND: R/W = Read/Write; R = Read only

表7-50. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:0

VOUT_ OVF

RW

See Below Sets the overvoltage fault limit. Format is per VOUT_ MODE.

Hardware Support and Value Mapping

The Hardware for VOUT_OV_FAULT_LIMIT is implemented as a fixed percentage of the current output voltage

target. Depending on the VOUT_MODE setting, the value written to VOUT_OV_FAULT_LIMIT must be mapped

to the hardware percentage.

Programmed values not exactly equal to one of the hardware relative values shall be rounded up to the next

available relative value supported by hardware. The hardware supports values from 105% to 140% of

VOUT_COMMAND in 2.5% steps. When output conversion is disabled, the hardware supports values from

110% to 140% of VOUT_COMMAND in 10% steps.

Attempts to write VOUT_OV_FAULT_LIMIT to any value outside those specified as valid will be considered

invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits and

notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

English Data Sheet: SLUSF26

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7.6.34 (41h) VOUT_OV_FAULT_RESPONSE

CMD Address

Write Transaction:

Read Transaction:

Format:

41h

Write Byte

Read Byte

Unsigned Binary (1 byte)

No

Phased:

NVM Back-up:

Updates:

EEPROM

On-the-fly

The VOUT_OV_FAULT_RESPONSE instructs the device on what action to take in response to an output

overvoltage fault. Upon triggering the overvoltage fault, the controller TPS546D24S responds according to the

data byte below, and the following actions are taken:

• Set the VOUT_OV_FAULT bit in the STATUS_BYTE.

• Set the VOUT bit in the STATUS_WORD.

• Set the VOUT_OVF bit in the STATUS_VOUT register.

• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.

图7-40. (41h) VOUT_OV_FAULT_RESPONSE Register Map

7

6

5

4

3

2

1

RW

0

RW

VO_OV_RESP

VO_OV_RETRY

VO_ OV_ DELAY

LEGEND: R/W = Read/Write; R = Read only

表7-51. Register Field Descriptions

Bit

Field

Access

Reset

Description

7:6

VO_OV_RE

SP

RW

NVM

Output overvoltage response

00b: Ignore. Continue operating without interruption.

01b: Shutdown. Shutdown and retry according to VO_OV_RETRY.

10b: Shutdown. Shutdown and retry according to VO_ OV_ RETRY.

11b: Invalid/Unsupported

5:3

2:0

VO_OV_RE

TRY

RW

NVM

0d: Do not attempt to restart (latch off).

1d-6d: After shutting down, wait one HICCUP period, and attempt to restart up to 1

- 6 times. After 1 - 6 failed restart attempts, do not attempt to restart (latch off).

7d: After shutting down, wait one HICCUP period, and attempt to restart

indefinitely, until commanded OFF, or a successful start-up occurs.

VO_OV_DE

LAY

0d: VO_OV HICCUP period is equal to TON_RISE.

1d - 7d: VO_OV HICCUP period is equal to 1 - 7 times TON_RISE.

Attempts to write VOUT_OV_FAULT_RESPONSE to any value outside those specified as valid, will be

considered invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status

bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

A Restart Attempt is successful and the restart limit counter is reset to 0 when no fault with a shut-down

response is observed after one (61h) TON_RISE time after completing (61h) TON_RISE or after (62h)

TON_MAX_FAULT_LIMIT if (62h) TON_MAX_FAULT_LIMIT is not set to 0 ms (Disabled).

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7.6.35 (42h) VOUT_OV_WARN_LIMIT

CMD Address

Write Transaction:

Read Transaction:

Format:

42h

Write Word

Read Word

ULINEAR16 Relative or Absolute per VOUT_MODE

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

The VOUT_OV_WARN_LIMIT command sets the value of the output voltage at the sense or output pins that

causes an output voltage high warning. This value is typically less than the output overvoltage threshold. The

OV_WARN_LIMIT sets an overvoltage threshold relative to the current VOUT_COMMAND. Updates to

VOUT_COMMAND do not update the value of VOUT_OV_FAULT_LIMIT when the absolute format is used.

When the sensed output voltage exceeds the VOUT_OV_WARN_LIMIT threshold, the following actions are

taken:

• Set the VOUT bit in the STATUS_WORD.

• Set the VOUT_OVW bit in the STATUS_VOUT register.

• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.

图7-41. (42h) VOUT_OV_WARN_LIMIT Register Map

15

14

13

12

11

10

9

8

RW

VOUT_OVW (High Byte)

7

6

5

4

3

2

1

0

RW

VOUT_OVW (Low Byte)

LEGEND: R/W = Read/Write; R = Read only

表7-52. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:0

VOUT_

OVW

RW

NVM

Sets the overvoltage warning limit. Format is per VOUT_ MODE.

Hardware Support and Value Mapping

The Hardware for VOUT_OV_WARN_LIMIT is implemented as a fixed percentage of the current output voltage

target. Depending on the VOUT_MODE setting, the value written to VOUT_OV_WARN_LIMIT must be mapped

to a hardware percentage.

Programmed values not exactly equal to one of the hardware relative values shall be rounded up to the next

available relative value supported by hardware. The hardware supports values from 103% to 116%

VOUT_COMMAND in 1% steps.

Attempts to write (42h) VOUT_OV_WARN_LIMIT to any value outside those specified as valid, will be

considered invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status

bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

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7.6.36 (43h) VOUT_UV_WARN_LIMIT

CMD Address

Write Transaction:

Read Transaction:

Format:

43h

Write Word

Read Word

ULINEAR16 Relative or Absolute per VOUT_MODE

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

The VOUT_UV_WARN_LIMIT command sets the value of the output voltage at the sense or output pins that

causes an output voltage low warning. The VOUT_UV_WARN_LIMIT sets an undervoltage threshold relative to

the current VOUT_COMMAND. Updates to VOUT_COMMAND do not update VOUT_UV_WARN_LIMIT when

the absolute format is used.

When the sensed output voltage exceeds the VOUT_UV_WARN_LIMIT threshold, the following actions are

taken:

• Set the VOUT bit in the STATUS_WORD.

• Set the VOUT_UVW bit in the STATUS_VOUT register.

• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.

图7-42. (43h) VOUT_UV_WARN_LIMIT Register Map

15

14

13

12

11

10

9

8

RW

VOUT_UVW (High Byte)

7

6

5

4

3

2

1

0

RW

VOUT_UVW (Low Byte)

LEGEND: R/W = Read/Write; R = Read only

表7-53. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:0

VOUT_

UVW

RW

NVM

Sets the undervoltage warning limit. Format is per VOUT_ MODE.

Hardware Mapping and Supported Values

The Hardware for VOUT_UV_WARN_LIMIT is implemented as a fixed percentage relative to the current output

voltage target. Depending on the VOUT_MODE setting, the value written to VOUT_UV_WARN_LIMIT must be

mapped to the hardware percentage.

Programmed values not exactly equal to one of the hardware relative values is rounded down to the next

available relative value supported by hardware. The hardware supports values from 84% to 97%

VOUT_COMMAND in 1% steps.

Attempts to write (43h) VOUT_UV_WARN_LIMIT to any value outside those specified as valid, will be

considered invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status

bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

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7.6.37 (44h) VOUT_UV_FAULT_LIMIT

CMD Address

Write Transaction:

Read Transaction:

Format:

44h

Write Word

Read Word

ULINEAR16 Absolute per VOUT_MODE

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

The VOUT_UV_FAULT_LIMIT command sets the value of the output voltage at the sense or output pins that

causes an output voltage fault. The VOUT_UV_FAULT_LIMIT sets an undervoltage threshold relative to the

current VOUT_COMMAND. Updates to VOUT_COMMAND do not update VOUT_UV_FAULT_LIMIT when the

absolute format is used.

When the undervoltage fault condition is triggered, the TPS546D24S responds according to

VOUT_UV_FAULT_RESPONSE.

图7-43. (44h) VOUT_UV_FAULT_LIMIT Register Map

15

14

13

12

11

10

9

8

RW

VOUT_UVF (High Byte)

7

6

5

4

3

2

1

0

RW

VOUT_UVF (Low Byte)

LEGEND: R/W = Read/Write; R = Read only

表7-54. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:0

VOUT_

UVW

RW

NVM

Sets the undervoltage fault limit. Format is per VOUT_ MODE

Hardware Mapping and Supported Values

The Hardware for VOUT_UV_FAULT_LIMIT is implemented as a fixed percentage relative to the current output

voltage target. Depending on the VOUT_MODE setting, the value written to VOUT_UV_FAULT_LIMIT must be

mapped to the hardware percentage.

Programmed values not exactly equal to one of the hardware relative values are rounded down to the next

available relative value supported by hardware. The hardware supports values from 60% to 95% of

VOUT_COMMAND in 2.5% steps.

Attempts to write (44h) VOUT_UV_FAULT_LIMIT to any value outside those specified as valid will be considered

invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits and

notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

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7.6.38 (45h) VOUT_UV_FAULT_RESPONSE

CMD Address

Write Transaction:

Read Transaction:

Format:

45h

Write Byte

Read Byte

Unsigned Binary (1 byte)

No

Phased:

NVM Back-up:

Updates:

EEPROM

On-the-fly

• The VOUT_UV_FAULT_RESPONSE instructs the device on what action to take in response to an output

undervoltage fault.

The VOUT_UV_FAULT_RESPONSE instructs the device on what action to take in response to an output

undervoltage fault. Upon triggering the overvoltage fault, the TPS546D24S responds according to the data byte

below, and the following actions are taken:

• Set the NONE OF THE ABOVE bit in the STATUS_BYTE.

• Set the VOUT bit in the STATUS_WORD.

• Set the VOUT_UVF bit in the STATUS_VOUT register.

• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.

图7-44. (45h) VOUT_UV_FAULT_RESPONSE Register Map

7

6

5

4

3

2

1

0

RW

VO_UV_RESP

VO_UV_RETRY

VO_UV_DLY

LEGEND: R/W = Read/Write; R = Read only

表7-55. Register Field Descriptions

Bit

Field

Access

Reset

Description

7:6

VO_ UV_

RESP

RW

NVM

Output undervoltage response

00b: Ignore. Continue operating without interruption.

01b: Shutdown after Delay, as set by VO_UV_DELY

10b: Shutdown Immediately

Other: Invalid/Unsupported

5:3

2:0

VO_ UV_

RETRY

RW

NVM

Output undervoltage retry

0d: Do not attempt to restart (latch off).

1d-6d: After shutting down, wait one HICCUP period, and attempt to restart upto 1 -

6 times. After 1 - 6 failed restart attempts, do not attempt to restart (latch off).

7d: After shutting down, wait one HICCUP period, and attempt to restart

indefinitely, until commanded OFF, or a successful start-up occurs.

VO_ UV_

DLY

Output undervoltage delay time for respond after delay and HICCUP

0d: Shutdown delay of one PWM_CLK, HICCUP equal to TON_RISE

1d: Shutdown delay of one PWM_CLK, HICCUP equal to TON_RISE

2d - 4d: Shutdown delay of three PWM_CLK, HICCUP equal to 2 - 4 times

TON_RISE

5d - 7d: Shutdown delay of seven PWM_CLK, HICCUP equal to 5 - 7 times

TON_RISE

Attempts to write (45h) VOUT_UV_FAULT_RESPONSE to any value outside those specified as valid will be

considered invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status

bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

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7.6.39 (46h) IOUT_OC_FAULT_LIMIT

CMD Address

Write Transaction:

Read Transaction:

Format:

46h

Write Word

Read Word

SLINEAR11 per CAPABILITY

Yes

Phased:

NVM Back-up:

Updates:

EEPROM or Pin Detection

On-the-fly

The IOUT_OC_FAULT_LIMIT command sets the value of the output current that causes the overcurrent detector

to indicate an overcurrent fault condition. While each TPS546D24S device in a multi-phase stack has its own

IOUT_OC_FAULT_LIMIT and comparator, the effective current limit of the multi-phase stack is equal to the

lowest IOUT_OC_FAULT_LIMIT setting times the number of phases in the stack.

When

the

overcurrent

fault

is

triggered,

the

TPS546D24S

responds

according

to

IOUT_OC_FAULT_RESPONSE.

图7-45. (46h) IOUT_OC_FAULT_LIMIT Register Map

15

14

13

12

11

10

9

8

RW

IO_OCF_EXP

IO_OCF_MAN

7

6

5

4

3

2

1

0

RW

IO_OCF_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-56. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:11

IO_OCF_

EXP

RW

11110b

Linear format two’s complement exponent

10:0

IO_OCF_

MAN

RW

NVM

Linear format two’s complement mantissa. Refer to the table below.

Multi-phase Stack Current Limit up to 62 A x Number of Phases (PHASE = FFh)

Per Phase OCL: up to 62 A (PHASE != FFh)

Attempts to write (46h) IOUT_OC_FAULT_LIMIT to any value outside those specified as valid, will be considered

invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits and

notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

Command Resolution and NVM Store/Restore Behavior

The Per-PHASE (PHASE != FFh) IOUT_OC_FAULT_LIMIT is implemented in analog hardware. The analog

hardware supports current limits from 8 A to 62 A in 2-A steps. Programmed values not exactly equal to

hardware supported values will be rounded up to the next available supported value. Values less than 8 A per

device can be written to IOUT_OC_FAULT_LIMIT, but values less than 8 A per device will be implemented as 8

A in hardware. The TPS546D24S provides only limited NVM-backed options for this command. Following a

power-cycle or NVM Store/Restore operation, the value will be rounded to the nearest NVM supported value.

The NVM supports values up to 62 A in 0.25-A steps.

Phased Command Behavior

Write when PHASE = FFh: Set IOUT_OC_FAULT_LIMIT for each phase to the written value divided by the

number of phases.

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Read when PHASE = FFh: Report the IOUT_OC_FAULT_LIMIT value of PHASE = 00h (Loop Controller) times

the number of phases.

Write when PHASE != FFh: Set IOUT_OC_FAUL_LIMIT for the current phase to the written value.

Read when PHASE != FFh: Report the IOUT_OC_FAULT_LIMIT value of the current phase.

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7.6.40 (47h) IOUT_OC_FAULT_RESPONSE

CMD Address

Write Transaction:

Read Transaction:

Format:

47h

Write Byte

Read Byte

Unsigned Binary (1 byte)

No

Phased:

NVM Back-up:

Updates:

EEPROM

On-the-fly

The IOUT_OC_FAULT_RESPONSE instructs the device on what action to take in response to an overcurrent

fault. Upon triggering the overcurrent fault, the TPS546D24S responds according to the data byte below, and the

following actions are taken:

• Set the IOUT_OC bit in the STATUS_BYTE.

• Set the IOUT bit in the STATUS_WORD.

• Set the IOUT_OCF bit in the STATUS_IOUT register.

• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.

图7-46. (47h) IOUT_OC_FAULT_RESPONSE Register Map

7

6

5

4

3

2

1

0

RW

R

IO_OC_RESP

IO_OC_RETRY

IO_OC_DELAY

LEGEND: R/W = Read/Write; R = Read only

表7-57. Register Field Descriptions

Bit

Field

Access

Reset

Description

7:6

IO_OC_RE

SP

RW

NVM

Output ovecurrent response

00b: Ignore. Continue operating without interruption.

01b: Ignore. Continue operating without interruption.

10b: Shutdown after Delay, as set by IO_OC_DELAY

11b: Shutdown Immediately

5:3

2:0

IO_OC_RET

RY

RW

NVM

Output overcurrent retry

0d: Do not attempt to restart (latch off).

1d-6d: After shutting down, wait one HICCUP period, and attempt to restart upto 1 -

6 times. After 1 - 6 failed restart attempts, do not attempt to restart (latch off).

7d: After shutting down, wait one HICCUP period, and attempt to restart

indefinitely, until commanded OFF, or a successful start-up occurs.

IO_OC_DEL

AY

Output overcurrent delay time for respond after delay and HICCUP

0d: Shutdown delay of one PWM_CLK, HICCUP equal to TON_RISE

1d: Shutdown delay of one PWM_CLK, HICCUP equal to TON_RISE

2d - 4d: Shutdown delay of three PWM_CLK, HICCUP equal to 2 - 4 times

TON_RISE

5d - 7d: Shutdown delay of seven PWM_CLK, HICCUP equal to 5 - 7 times

TON_RISE

Attempts to write (47h) IOUT_OC_FAULT_RESPONSE to any value outside those specified as valid will be

considered invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status

bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

English Data Sheet: SLUSF26

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7.6.41 (4Ah) IOUT_OC_WARN_LIMIT

CMD Address

Write Transaction:

Read Transaction:

Format:

4Ah

Write Word

Read Word

SLINEAR11 per CAPABILITY

Yes

Phased:

NVM Back-up:

Updates:

EEPROM or Pin Detection

On-the-fly

The IOUT_OC_WARN_LIMIT command sets the value of the output current, in amperes, that causes the

overcurrent detector to indicate an overcurrent warning condition. The units are amperes.

IOUT_OC_WARN_LIMIT is a phased command. Each phase will report an output current overcurrent warning

independently.

In response to an overcurrent warning condition, the TPS546D24S takes the following action:

• Set the NONE OF THE ABOVE bit in the STATUS_BYTE.

• Set the IOUT bit in the STATUS_WORD.

• Set the IOUT_OCW bit in the STATUS_IOUT register.

• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.

图7-47. (4Ah) IOUT_OC_WARN_LIMIT Register Map

15

14

13

12

11

10

9

8

RW

IOOCW_EXP

IOOCW_MAN

7

6

5

4

3

2

1

0

RW

IOOCW_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-58. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:11

IOOCW_

EXP

RW

11110b

Linear format two’s complement exponent

10:0

IOOCW_

MAN

RW

NVM

Linear format two’s complement mantissa

Supported values up to 62 A times the number of phases.

Attempts to write (4Ah) IOUT_OC_WARN_LIMIT to any value outside those specified as valid will be considered

invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits and

notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

Command Resolution and NVM Store/Restore Behavior

The Per-PHASE (PHASE != FFh) IOUT_OC_WARN_LIMIT is implemented in analog hardware. The analog

hardware supports current limits from 8 A to 62 A in 2-A steps. Programmed values not exactly equal to

hardware supported values will be rounded up to the next available supported value. Values less than 8 A per

device can be written to IOUT_OC_FAULT_LIMIT, but values less than 8 A per device will be implemented as 8

A in hardware. The TPS546D24S provides only limited NVM-backed options for this command. Following a

power-cycle or NVM Store/Restore operation, the value will be rounded to the nearest NVM supported value.

The NVM supports values up to 62 A in 0.25-A steps.

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7.6.42 (4Fh) OT_FAULT_LIMIT

CMD Address

Write Transaction:

Read Transaction:

Format:

4Fh

Write Word

Read Word

SLINEAR11 per CAPABILITY

Yes

Phased:

NVM Back-up:

Updates:

EEPROM

On-the-fly

The OT_FAULT_LIMIT command sets the value of the temperature limit, in degrees Celsius, that causes an

overtemperature fault condition.

The converter response to an overtemperature event is described in OT_FAULT_RESPONSE.

图7-48. (4Fh) OT_FAULT_LIMIT Register Map

15

14

13

12

11

10

9

8

RW

OTF_EXP

OTF_MAN

7

6

5

4

3

2

1

0

RW

OTF_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-59. Register Field Descriptions

Bit

Field

Access

RW

Reset

00000b

NVM

Description

Linear format two’s complement exponent

Linear format two’s complement mantissa. Refer to the following text.

15:11

10:0

OTF_ EXP

OTF_ MAN

RW

Attempts to write (4Fh) OT_FAULT_LIMIT to any value outside those specified as valid will be considered

invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits and

notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

Command Resolution and NVM Store/Restore Behavior

The (4Fh) OT_FAULT_LIMIT command is implemented using the TPS546D24S internal telemetry system. As a

result, the value of this command can be programmed with very high resolution using the linear format. However,

the TPS546D24S provides only limited NVM-backed options for this command. Following a power-cycle or NVM

Store/Restore operation, the value will be restored to the nearest NVM supported value. The NVM supports

values from 0°C to 160°C in 1°C steps. Programming a value of 255°C will disable Programmable

Overtemperature Fault Limit without disabling the on-die Bandgap thermal shutdown.

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7.6.43 (50h) OT_FAULT_RESPONSE

CMD Address

Write Transaction:

Read Transaction:

Format:

50h

Write Byte

Read Byte

Unsigned Binary (1 byte)

No

Phased:

NVM Back-up:

Updates:

EEPROM

On-the-fly

The OT_FAULT_RESPONSE command instructs the device on what action to take in response to an

Overtemperature Fault. Upon triggering the overtemperature fault, the converter responds per the data byte

below, and the following actions are taken:

• Set the TEMP bit in the STATUS_BYTE.

• Set the OTF bit in the STATUS_TEMPERATURE register.

• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.

Note: the OT Fault hysteresis is set by the (51h) OT_WARN_LIMIT. When (8Dh) READ_TEMPERATURE_1 falls

below (51h) OT_WARN_LIMIT, the overtemperature fault condition will be released and restart will be allowed if

selected by (50h) OT_FAULT_RESPONSE. If (51h) OT_WARN_LIMIT is programmed higher than (4Fh)

OT_FAULT_LIMIT, a default hysteresis of 20°C will be used instead.

图7-49. (50h) OT_FAULT_RESPONSE Register Map

7

6

5

4

3

2

1

0

RW

OTF_RESP

OT_RETRY

OT_DELAY

LEGEND: R/W = Read/Write; R = Read only

表7-60. Register Field Descriptions

Bit

Field

Access

Reset

Description

7:6

OTF_RESP

RW

NVM

Overtemperature fault response

00b: Ignore. Continue operating without interruption.

01b: Delayed Shutdown Continue Operating for 10ms x OT_DELAY. If OT_FAULT

is still present, shut down and restart according to OT_RETRY.

10b: Immediate Shutdown. Shut down and restart according to OT_RETRY.

11b: Shutdown until Temperature is below OT_WARN_LIMIT, then restart

according to OT_RETRY*.

5:3

OT_RETRY

RW

NVM

Overtemperature retry

0d: Do not attempt to restart (latch off).

1d-6d: After shutting down, wait one HICCUP period, and attempt to restart up to 1

- 6 times. After 1 - 6 failed restart attempts, do not attempt to restart (latch off).

Restart attempts that occur while temperature is above OT_WARN_LIMIT will not

be observable but will be counted.

7d: After shutting down, wait one HICCUP period, and attempt to restart

indefinitely, until commanded OFF or a successful start-up occurs.

2:0

OT_DELAY

NVM

Overtemperature delay time for respond after delay and HICCUP

0d: Shutdown delay of 10 ms, HICCUP equal to TON_RISE, HICCUP delay equal

to TON_RISE

1d - 7d: Shutdown delay of 1-7 ms, HICCUP equal to 2-4 times TON_RISE

Attempts to write (50h) OT_FAULT_RESPONSE to any value outside those specified as valid will be considered

invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits and

notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

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*When (50h) OT_FAULT_RESPONSE OTF_RESP (Bits 7:6) are set to 11b - shut down until temperature is

below (51h) OT_WARN_LIMIT, issuing a (03h) CLEAR_FAULTS command while the temperature is between

(4Fh) OT_FAULT_LIMIT and (51h) OT_WARN_LIMIT can result in the TPS546D24S remaining in the OT FAULT

state until the temperature rises above (4Fh) OT_FAULT_LIMIT or disabled and enabled according to (02h)

ON_OFF_CONFIG.

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7.6.44 (51h) OT_WARN_LIMIT

CMD Address

Write Transaction:

Read Transaction:

Format:

51h

Write Word

Read Word

SLINEAR11 per CAPABILITY

Yes

Phased:

NVM Back-up:

Updates:

EEPROM

On-the-fly

The OT_WARN_LIMIT command sets the temperature, in degrees Celsius, of the unit at which it must indicate

an Overtemperature Warning alarm. The units are degrees C.

Upon triggering the overtemperature fault, the converter responds per the data byte below, and the following

actions are taken:

• Set the TEMP bit in the STATUS_BYTE.

• Set the OTW bit in the STATUS_TEMPERATURE register.

• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.

图7-50. (51h) OT_WARN_LIMIT Register Map

15

14

13

12

11

10

9

8

RW

OTW_EXP

OTW_MAN

7

6

5

4

3

2

1

0

RW

OTW_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-61. Register Field Descriptions

Bit

Field

Access

RW

Reset

00000b

NVM

Description

Linear format two’s complement exponent

Linear format two’s complement mantissa. Refer to the following text.

15:11

10:0

OTW_ EXP

OTW_ MAN

RW

Attempts to write (51h) OT_WARN_LIMIT to any value outside those specified as valid will be considered invalid/

unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits and notifying

the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

Command Resolution and NVM Store/Restore Behavior

The (51h) OT_WARN_LIMIT command is implemented using the TPS546D24S internal telemetry system. As a

result the value of this command can be programmed with very high resolution using the linear format. However,

the TPS546D24S provides only limited NVM-backed options for this command. Following a power-cycle or NVM

Store/Restore operation, the value will be restored to the nearest NVM supported value. The NVM supports

values from 0°C to 160°C in 1°C steps. Programming OT_WARN_LIMIT to a value of 255°C will disable the

OT_WARN_LIMIT function.

OT_WARN_LIMIT is used to provide hysteresis to OT_FAULT_LIMIT faults. If OT_WARN_LIMIT is programmed

greater than OT_FAULT_LIMIT, including disabling OT_WARN_LIMIT with a value of 255°C, a default hysteresis

of 20°C will be used instead.

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7.6.45 (55h) VIN_OV_FAULT_LIMIT

CMD Address

Write Transaction:

Read Transaction:

Format:

55h

Write Word

Read Word

SLINEAR11 per CAPABILITY

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

The (55h) VIN_OV_FAULT_LIMIT command sets the PVIN voltage, in volts, when a VIN_OV_FAULT is

declared. The response to a detected VIN_OV_FAULT is determined by the settings of (56h)

VIN_OV_FAULT_RESPONSE. (55h) VIN_OV_FAULT_LIMIT is typically used to stop switching in the event of

excessive input voltage, which can result in over-stress damage to the power FETs due to ringing on the SW

node.

图7-51. (55h) VIN_OV_FAULT_LIMIT Register Map

15

14

13

12

11

10

9

8

RW

VINOVF_EXP

VINOVF_MAN

7

6

5

4

3

2

1

0

RW

VINOVF_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-62. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:11

VINOVF_

EXP

RW

11110b

Linear format two’s complement exponent

Linear format two’s complement mantissa

10:0

VINOVF_

MAN

RW

NVM

Attempts to write (55h) VIN_OV_FAULT_LIMIT beyond the supported range will be considered invalid/

unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits and notifying

the host according to the PMBus 1.3.1 Part II specification section 10.9.3. (55h) VIN_OV_FAULT_LIMIT supports

values from 4 V to 20 V in 0.25-V steps. Following a Power Cycle or STORE/RESTORE, (55h)

VIN_OV_FAULT_LIMIT will be restored to the nearest supported value.

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7.6.46 (56h) VIN_OV_FAULT_RESPONSE

CMD Address

Write Transaction:

Read Transaction:

Format:

56h

Write Byte

Read Byte

Unsigned Binary (1 byte)

No

Phased:

NVM Back-up:

Updates:

EEPROM

On-the-fly

The VIN_OV_FAULT_RESPONSE command instructs the device on what action to take in response to a PVIN

Overvoltage Fault. Upon triggering the PVIN overvoltage fault, the converter responds per the data byte below,

and the following actions are taken:

• Set the NONE OF THE ABOVE bit in the STATUS_BYTE register.

• Set the INPUT bit in the upper byte of the STATUS_WORD register.

• Set the VIN_OV bit in the STATUS_INPUT register.

• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.

图7-52. (56h) VIN_OV_FAULT_RESPONSE Register Map

7

6

5

4

3

2

1

0

RW

VINOVF_RESP

VINOVF_RETRY

VIN_OVF_DLY

LEGEND: R/W = Read/Write; R = Read only

表7-63. Register Field Descriptions

Bit

Field

Access

Reset

Description

7:6

VIN_OVF_

RESP

RW

NVM

PVIN Overvoltage fault response

00b: Ignore. Continue operating without interruption.

01b: Delayed Shutdown Continue Operating for a number of switching cycles

defined by VIN_OVF_DLY, then if fault persists, shut down and restart according to

VIN_OV_RETRY.

10b: Immediate Shutdown. Shut down and restart according to VIN_OV_RETRY.

11b: Invalid / Not Supported

5:3

VIN_OVF_

RETRY

RW

NVM

PVIN Overvoltage retry

0d: Do not attempt to restart (latch off).

1d-6d: After shutting down, wait one HICCUP period, and attempt to restart up to 1

- 6 times. After 1 - 6 failed restart attempts, do not attempt to restart (latch off).

Restart attempts that occur while PVIN voltage is above VIN_OV_FAULT_LIMIT

will not be observable but will be counted

7d: After shutting down, wait one HICCUP period, and attempt to restart

indefinitely, until commanded OFF, or a successful start-up occurs.

2:0

VIN_OVF_

DLY

NVM

PVIN Overvoltage delay time for respond after delay and HICCUP

0d: Shutdown delay of one PWM_CLK, HICCUP equal to TON_RISE

1d: Shutdown delay of one PWM_CLK, HICCUP equal to TON_RISE

2d - 4d: Shutdown delay of three PWM_CLK, HICCUP equal to 2 - 4 times

TON_RISE

5d - 7d: Shutdown delay of seven PWM_CLK, HICCUP equal to 5 - 7 times

TON_RISE

Attempts to write (56h) VIN_OV_FAULT_RESPONSE to any value outside those specified as valid will be

considered invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status

bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

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7.6.47 (58h) VIN_UV_WARN_LIMIT

CMD Address

Write Transaction:

Read Transaction:

Format:

58h

Write Word

Read Word

SLINEAR11 per CAPABILITY

Yes

Phased:

NVM Back-up:

Updates:

EEPROM

On-the-fly

The (58h) VIN_UV_WARN_LIMIT command sets the value of the PVIN pin voltage, in volts, that causes the

input voltage detector to indicate an input undervoltage warning.

The (58h) VIN_UV_WARN_LIMIT is a phase command, each phase within a stack will independently detect and

report input undervoltage warnings.

In response to an input undervoltage warning condition, the TPS546D24S takes the following action:

• Set the NONE OF THE ABOVE bit in the STATUS_BYTE.

• Set the INPUT bit in the STATUS_WORD.

• Set the VIN_UVW bit in the STATUS_INPUT register.

• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.

图7-53. (58h) VIN_UV_WARN_LIMIT Register Map

15

14

13

12

11

10

9

RW

8

RW

VINUVW_EXP

VINUVW_MAN

7

6

5

4

3

2

1

0

RW

VINUVW_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-64. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:11

VINUVW_

EXP

RW

11110b

Linear format two’s complement exponent

10:0

VINUVW_

MAN

RW

NVM

Linear format two’s complement mantissa

Supported values 2.5 V to 15.5 V

Attempts to write (58h) VIN_UV_WARN_LIMIT to any value outside those specified as valid will be considered

invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status bits and

notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

English Data Sheet: SLUSF26

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7.6.48 (60h) TON_DELAY

CMD Address

Write Transaction:

Read Transaction:

Format:

60h

Write Word

Read Word

SLINEAR11 per CAPABILITY

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

The TON_DELAY command sets the time, in milliseconds, from when a start condition is received (as

programmed by the ON_OFF_CONFIG command) until the output voltage starts to rise.

图7-54. (60h) TON_DELAY Register Map

15

14

13

12

11

10

9

RW

8

RW

TONDLY_EXP

TONDLY_MAN

7

6

5

4

3

2

1

0

RW

TONDLY_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-65. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:11

TONDLY_

EXP

RW

11111b

Linear format two’s complement exponent.

10:0

TONDLY_

MAN

RW

NVM

Linear format two’s complement mantissa.

Note, a minimum turn-on delay of approximately 100 μs is observed even when

TON_DELAY during which the device initializes itself at every power-on.

Attempts to write (60h) TON_DELAY beyond the supported range will be considered invalid/unsupported data

and cause the TPS546D24S to respond by flagging the appropriate status bits and notifying the host according

to the PMBus 1.3.1 Part II specification section 10.9.3. TON_DELAY supports values from 0ms to 127.5 ms in

0.5-ms steps. Following a Power Cycle or STORE/RESTORE, TON_DELAY will be restored to the nearest

supported value.

Refer to the Start-Up and Shutdown behavior section for handling of corner cases with respect to interrupted

TON_DELAY, TON_RISE , TOFF_FALL, and TOFF_DELAY times.

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7.6.49 (61h) TON_RISE

CMD Address

Write Transaction:

Read Transaction:

Format:

61h

Write Word

Read Word

SLINEAR11 per CAPABILITY

No

Phased:

NVM Back-up:

Updates:

EEPROM or Pin Detection

On-the-fly

The TON_RISE command sets the time, in milliseconds, from when the output starts to rise until the voltage has

entered the regulation band. This effectively sets the slew rate of the reference DAC during the soft-start period.

Note that the rise time is equal to TON_RISE regardless of the value of the target output voltage or

VOUT_SCALE_LOOP.

Due to hardware limitations in the resolution of the reference DAC slew-rate control, longer TON_RISE times

with higher VOUT_COMMAND voltages can result in some quantization error in the programmed TON_RISE

times with several TON_RISE times producing the same VOUT slope and TON_RISE time even with different

TON_RISE settings or different TON_RISE times for the same TON_RISE setting and different

VOUT_COMMAND voltages.

图7-55. (61h) TON_RISE Register Map

15

14

13

12

11

10

9

8

RW

TONR_EXP

TONR_MAN

7

6

5

4

3

2

1

0

RW

TONR_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-66. Register Field Descriptions

Bit

Field

Access

RW

Reset

11110b

NVM

Description

15:11

10:0

TONR_ EXP

Linear format two’s complement exponent

Linear format two’s complement mantissa

TONR_

MAN

RW

Attempts to write (61h) TON_RISE beyond the supported range will be considered invalid/unsupported data and

cause the TPS546D24S to respond by flagging the appropriate status bits and notifying the host according to the

PMBus 1.3.1 Part II specification section 10.9.3. TON_RISE will support the range from 0ms to 31.75 ms in 0.25-

ms steps. Values less than 0.5 ms are supported as 0.5 ms.

English Data Sheet: SLUSF26

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7.6.50 (62h) TON_MAX_FAULT_LIMIT

CMD Address

Write Transaction:

Read Transaction:

Format:

62h

Write Word

Read Word

SLINEAR11 per CAPABILITY

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

The TON_MAX_FAULT_LIMIT command sets an upper limit, in milliseconds, on how long the unit can attempt to

power up the output without reaching the target voltage.

The TON_MAX time is defined as the maximum allowable amount of time from the end of TON_DELAY, until the

output voltage reaches 85% of the programmed output voltage, as sensed by the READ_VOUT telemetry at

VOSNS - GOSNS.

Note that for the TPS546D24S, the undervoltage fault limit is enabled at the end of TON_RISE. As a

consequence, unless VOUT_UV_FAULT_RESPONSE is set to ignore, in the case of a “real” TON_MAX fault

(for example, output voltage did not rise quickly enough), UV faults / associated response will always precede

TON_MAX.

The converter response to a TON_MAX fault event is described in TON_MAX_FAULT_RESPONSE.

图7-56. (62h) TON_MAX_FAULT_LIMIT Register Map

15

14

13

12

11

10

9

RW

8

RW

TONMAXF_EXP

TONMAXF_MAN

7

6

5

4

3

2

1

0

RW

TONMAXF_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-67. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:11

TONMAXF_

EXP

RW

11111b

Linear format two’s complement exponent

Linear format two’s complement mantissa

10:0

TONMAXF_

MAN

RW

NVM

Attempts to write (62h) TON_MAX_FAULT_LIMIT will be considered an invalid/unsupported command and

cause the TPS546D24S to respond by flagging the appropriate status bits and notifying the host according to the

PMBus 1.3.1 Part II specification section 10.9.3. TON_MAX_FAULT_LIMIT supports values from 0 ms to 127 ms

in 0.5-ms steps.

*Note: programming TON_MAX_FAULT to 0 ms disables the TON_MAX functionality.

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7.6.51 (63h) TON_MAX_FAULT_RESPONSE

CMD Address

Write Transaction:

Read Transaction:

Format:

63h

Write Byte

Read Byte

Unsigned Binary (1 byte)

No

Phased:

NVM Back-up:

Updates:

EEPROM

On-the-fly

The TON_MAX_FAULT_RESPONSE instructs the device on what action to take in response to TON_MAX fault.

Upon triggering the input TON_MAX fault, the converter responds per the byte below and the following actions

are taken:

• Set the NONE OF THE ABOVE bit in the STATUS_BYTE.

• Set the VOUT bit in the STATUS_WORD.

• Set the TON_MAX bit in STATUS_VOUT.

• Notify the host per PMBus 1.3.1 Part II specification, section 10.2.

图7-57. (63h) TON_MAX_FAULT_RESPONSE Register Map

7

6

5

4

3

2

1

RW

0

RW

TONMAX_RESP

TONMAX_RETRY

TONMAX_DELAY

LEGEND: R/W = Read/Write; R = Read only

表7-68. Register Field Descriptions

Bit

Field

Access

Reset

Description

7:6

TONMAX_

RESP

RW

NVM

TON_ MAX Fault Response

00b: Ignore. Continue operating without interruption.

01b: Continue Operating for the delay time specified by TONMAX_DELAY, if the

fault is still present, shutdown and restart according to TONMAX_RETRY.

10b: Shutdown Immediately and restart according to TONMAX_RETRY.Other:

Invalid/Unsupported

5:3

2:0

TONMAX_

RETRY

RW

NVM

TON_MAX Fault Retry

0d: Do not attempt to restart (latch off).

1d-6d: After shutting down, wait one HICCUP period, and attempt to restart up to 1

- 6 times.

7d: After shutting down, wait one HICCUP period, and attempt to restart

indefinitely, until commanded OFF, or a successful start-up occurs.

TONMAX_

DELAY

TON_MAX delay time for respond after delay and HICCUP

0d: Shutdown delay of 1 ms, HICCUP equal to TON_RISE

1d - 7d: Shutdown delay of 1-7 ms, HICCUP equal to 2-7 times TON_RISE

Attempts to write (63h) TON_MAX_FAULT_RESPONSE to any value outside those specified as valid, will be

considered invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate status

bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

English Data Sheet: SLUSF26

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7.6.52 (64h) TOFF_DELAY

CMD Address

Write Transaction:

Read Transaction:

Format:

64h

Write Word

Read Word

SLINEAR11 per CAPABILITY

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

The TOFF_DELAY command sets the time, in milliseconds, from when a stop condition is received (as

programmed by the ON_OFF_CONFIG command) until the unit stops transferring energy to the output.

图7-58. (64h) TOFF_DELAY Register Map

15

14

13

12

11

10

9

RW

8

RW

TOFFDLY_EXP

TOFFDLY_MAN

7

6

5

4

3

2

1

0

RW

TOFFDLY_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-69. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:11

TOFFDLY_

EXP

RW

11111b

Linear format two’s complement exponent

Linear format two’s complement mantissa

10:0

TOFFDLY_

MAN

RW

NVM

Attempts to write (64h) TOFF_DELAY beyond the supported range will be considered invalid/unsupported data

and cause the TPS546D24S to respond by flagging the appropriate status bits and notifying the host according

to the PMBus 1.3.1 Part II specification section 10.9.3. TOFF_DELAY supports values from 0 ms to 127.5 ms in

0.5-ms steps. An internal delay of up to 50 µs will be added to TOFF_DELAY, even if TOFF_DELAY is equal to 0

ms.

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7.6.53 (65h) TOFF_FALL

CMD Address

Write Transaction:

Read Transaction:

Format:

65h

Write Word

Read Word

SLINEAR11 per CAPABILITY

Phased:

No

NVM Back-up:

Updates:

EEPROM

On-the-fly

The TOFF_FALL command sets the time, in milliseconds, from the end of the turnoff delay time until the voltage

is commanded to zero. Note that this command can only be used with a device whose output can sink enough

current to cause the output voltage to decrease at a controlled rate. This effectively sets the slew rate of the

reference DAC during the soft-off period. Note that the fall time is equal to TOFF_FALL regardless of the value of

the target output voltage or VOUT_SCALE_LOOP for the purposes of slew rate selection based on the target

output voltage.

图7-59. (65h) TOFF_FALL Register Map

15

14

13

12

11

10

9

8

RW

TOFFF_EXP

TOFFF_MAN

7

6

5

4

3

2

1

0

RW

TOFFF_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-70. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:11

TOFFF_

EXP

RW

11110b

Linear format two’s complement exponent. Exponent = -2, LSB = 0.25 ms

Linear format two’s complement mantissa

10:0

TOFFF_

MAN

RW

NVM

Attempts to write (65h) TOFF_FALL beyond the supported range will be considered invalid/unsupported data

and cause the TPS546D24S to respond by flagging the appropriate status bits and notifying the host according

to the PMBus 1.3.1 Part II specification section 10.9.3. (65h) TOFF_FALL supports values from 0.5 ms to 31.75

ms in 0.25-ms steps. Values less than 0.5 ms will be implemented as 0.5 ms.

Due to hardware limitations in the resolution of the reference DAC slew-rate control, longer TOFF_FALL times

with higher (21h) VOUT_COMMAND voltages can result in some quantization error in the programmed

TOFF_FALL times with several TOFF_FALL times producing the same VOUT slope and TOFF_FALL time even

with different TOFF_FALL settings, or different TOFF_FALL times for the same TOFF_FALL setting and different

(21h) VOUT_COMMAND voltages.

English Data Sheet: SLUSF26

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7.6.54 (78h) STATUS_BYTE

CMD Address

Write Transaction:

Read Transaction:

Format:

78h

Write Byte

Read Byte

Unsigned Binary (1 byte)

Phased:

Yes

NVM Back-up:

Updates:

No

On-the-fly

The STATUS_BYTE command returns one byte of information with a summary of the most critical faults, such as

overvoltage, overcurrent, overtemperature, and so forth. The supported STATUS_BYTE message content is

described in the following table. The STATUS_BYTE is equal the low byte of STATUS_WORD. The conditions in

the STATUS_BYTE are summary information only. They are asserted to inform the host as to which other

STATUS registers must be checked in the event of a fault. Setting and clearing of these bits must be done in the

individual status registers. For example, Clearing VOUT_OVF in STATUS_VOUT also clears VOUT_OV in

STATUS_BYTE.

图7-60. (78h) STATUS_BYTE Register Map

7

6

5

4

3

2

1

0

RW

R

NONE OF THE

ABOVE

BUSY

OFF

VOUT_OV

IOUT_OC

VIN_UV

TEMP

CML

LEGEND: R/W = Read/Write; R = Read only

表7-71. Register Field Descriptions

Bit

Field

Access

Reset

Description

7

BUSY

RW

0b

0b: A fault was NOT declared because the device was busy and unable to

respond.

1b. A fault was declared because the device was busy and unable to respond.

6

OFF

R

0b

LIVE (unlatched) status bit

0b. The unit is enabled and converting power.

1b: The unit is NOT converting power for any reason including simply not being

enabled.

5

4

3

2

VOUT_ OV

IOUT_ OC

VIN_ UV

TEMP

R

0b

0b: An output overvoltage fault has NOT occurred.

1b: An output overvoltage fault has occurred.

0b: An output overcurrent fault has NOT occurred.

1b: An output overcurrent fault has occurred.

0b: An input undervoltage fault has NOT occurred.

1b: An input undervoltage fault has occurred.

0b: A temperature fault/warning has NOT occurred.

1b: A temperature fault/warning has occurred, the host must check

STATUS_TEMPERATURE for more information.

1

0

CML

R

0b

0b: A communication, memory, logic fault has NOT occurred.

1b: A communication, memory, logic fault has occurred, the host must check

STATUS_ CML for more information.

NONE OF

THE

ABOVE

0b: A fault other than those listed above has NOT occurred.

1b: A fault other than those listed above has occurred. The host must check the

STATUS_ WORD for more information.

Writing 80h to STATUS_BYTE will clear the BUSY bit, if set.

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7.6.55 (79h) STATUS_WORD

CMD Address

Write Transaction:

Read Transaction:

Format:

79h

Write Word

Read Word

Unsigned Binary (2 bytes)

Phased:

Yes

NVM Back-up:

Updates:

No

On-the-fly

The STATUS_WORD command returns two bytes of information with a summary of the most critical faults, such

as overvoltage, overcurrent, overtemperature, and so forth. The low byte of the STATUS_WORD is the same

register as the STATUS_BYTE. The supported STATUS_WORD message content is described in the following

table. The conditions in the STATUS_BYTE are summary information only.

图7-61. (79h) STATUS_WORD Register Map

15

R

14

R

13

12

11

10

9

R

8

R

0

R

VOUT

IOUT

INPUT

MFR

PGOOD

0

OTHER

7

6

5

4

3

2

1

0

RW

R

STATUS_BYTE

LEGEND: R/W = Read/Write; R = Read only

表7-72. Register Field Descriptions

Bit

Field

Access

Reset

Description

15

VOUT

R

0b

0b: An output voltage related fault has NOT occurred.

1b: An output voltage fault has occurred. The host must check STATUS_ VOUT for

more information

14

13

12

11

IOUT

INPUT

MFR

R

0b

0b: An output current related fault has NOT occurred.

1b: An output current fault has occurred. The host must check STATUS_ IOUT for

more information

0b: An input related fault has NOT occurred.

1b: An input fault has occurred. The host must check STATUS_ INPUT for more

information

0b: A Manufacturer-defined fault has NOT occurred.

1b: A Manufacturer-defined fault has occurred. The host must check STATUS_

MFR_ SPECIFIC for more information.

PGOOD

LIVE (unlatched) status bit. Should follow always the value of the PGOOD/

RESET_B pin is asserted.

0b: The output voltage is within the regulation window. PGOOD pin is de-asserted.

1b: The output voltage is NOT within the regulation window. PGOOD pin is

asserted.

10

9

Not

Supported

R

0b

Not supported and always set to 0b

OTHER

0b: An OTHER fault has not occurred.

1b: An OTHER fault has occurred, the host must check STATUS_ OTHER for more

information.

8

Not

R

0b

Not supported and always set to 0b.

Supported

7:0

STATUS_

BYTE

RW

00h

Always equal to the STATUS_ BYTE value.

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All bits which can trigger SMBALERT have a corresponding bit in SMBALERT_MASK.

Writing 0080h to STATUS_WORD will clear the BUSY bit, if set. Writing 0180h to STATUS_WORD will clear both

the BUSY bit and UNKNOWN bit, if set.

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7.6.56 (7Ah) STATUS_VOUT

CMD Address

Write Transaction:

Read Transaction:

Format:

7Ah

Write Byte

Read Byte

Unsigned Binary (1 byte)

Phased:

No

NVM Back-up:

Updates:

No

On-the-fly

The STATUS_VOUT command returns one data byte with contents as follows. All supported bits can be cleared

either by CLEAR_FAULTS, or individually by writing 1b to the (7Ah) STATUS_VOUT register in their position, per

the PMBus 1.3.1 Part II specification section 10.2.4.

图7-62. (7Ah) STATUS_VOUT Register Map

7

6

5

4

3

2

1

0

RW

R

VOUT_MIN_MA

X

VOUT_OVF

VOUT_OVW

VOUT_UVW

VOUT_UVF

TON_MAX

0

LEGEND: R/W = Read/Write; R = Read only

表7-73. Register Field Descriptions

Bit

Field

Access

Reset

Description

7

VOUT_ OVF

RW

0b

0b: Latched flag indicating VOUT OV fault has NOT occurred.

1b: Latched flag indicating a VOUT OV fault has occurred.

Note: the mask bits for VOUT_ OVF will mask fixed, tracking, and pre-biased OVP.

These can be individually controlled in SMBALERT_ MASK_ EXTENDED.

6

VOUT_

OVW

RW

0b

0b: Latched flag indicating VOUT OV warn has NOT occurred.

1b: Latched flag indicating a VOUT OV warn has occurred.

Note: the mask bits for VOUT_ OVF will mask fixed and tracking Overvoltage

Protection.

5

4

VOUT_

UVW

RW

R

0b

0b: Latched flag indicating VOUT UV warn has NOT occurred.

1b: Latched flag indicating a VOUT UV warn has occurred.

VOUT_ UVF

0b: Latched flag indicating VOUT UV fault has NOT occurred.

1b: Latched flag indicating a VOUT UV fault has occurred.

3

VOUT_

MIN_MAX

0b

0b: Latched flag indicating a VOUT_ MIN_MAX has NOT occurred.

1b: Latched flag indicating a VOUT_ MIN_MAX has occurred.

2

TON_ MAX

0b

0b: Latched flag indicating a TON_ MAX has NOT occurred.

1b: Latched flag indicating a TON_ MAX has occurred.

1:0

Not

00b

Not supported and always set to 00b.

supported

All bits which can trigger SMBALERT have a corresponding bit in SMBALERT_MASK.

English Data Sheet: SLUSF26

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7.6.57 (7Bh) STATUS_IOUT

CMD Address

Write Transaction:

Read Transaction:

Format:

7Bh

Write Byte

Read Byte

Unsigned Binary (1 byte)

Phased:

Yes

NVM Back-up:

Updates:

No

On-the-fly

The STATUS_IOUT command returns one data byte with contents as follows. All supported bits can be cleared

either by CLEAR_FAULTS, or individually by writing 1b to the (7Bh) STATUS_IOUT register in their position, per

the PMBus 1.3.1 Part II specification section 10.2.4.

图7-63. (7Bh) STATUS_IOUT Register Map

7

6

R

0

5

4

RW

0

3

R

0

2

R

0

1

R

0

R

0

RW

IOUT_OCF

IOUT_OCW

LEGEND: R/W = Read/Write; R = Read only

表7-74. Register Field Descriptions

Bit

Field

Access

Reset

Description

7

IOUT_ OCF

RW

0b

0b: Latched flag indicating IOUT OC fault has NOT occurred.

1b: Latched flag indicating IOUT OC fault has occurred.

6

5

Not

Supported

R

RW

R

0b

Not supported and always set to 0b.

IOUT_ OCW

0b: Latched flag indicating IOUT OC warn has NOT occurred.

1b: Latched flag indicating IOUT OC warn has occurred.

4:0

Not

Not supported and always set to 00000b

supported

All bits which can trigger SMBALERT have a corresponding bit in SMBALERT_MASK.

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7.6.58 (7Ch) STATUS_INPUT

CMD Address

Write Transaction:

Read Transaction:

Format:

7Ch

Write Byte

Read Byte

Unsigned Binary (1 byte)

Phased:

Yes

NVM Back-up:

Updates:

No

On-the-fly

The STATUS_INPUT command returns one data byte with contents as follows. All supported bits can cleared

either by CLEAR_FAULTS, or individually by writing 1b to the (7Ch) STATUS_INPUT register in their position,

per the PMBus 1.3.1 Part II specification section 10.2.4.

图7-64. (7Ch) STATUS_INPUT Register Map

7

6

0

5

4

R

0

3

2

R

0

1

R

0

R

0

RW

R

RW

VIN_OVF

VIN_UVW

LOW_VIN

LEGEND: R/W = Read/Write; R = Read only

表7-75. Register Field Descriptions

Bit

Field

Access

Reset

Description

7

VIN_OVF

RW

0b

0b: Latched flag indicating PVIN OV fault has NOT occurred.

1b: Latched flag indicating PVIN OV fault has occurred.

6

5

VIN_OVW

VIN_UVW

RW

0b

Not supported and always set to 0b

0b: Latched flag indicating PVIN UV warn occurred.

1b: Latched flag indicating PVIN UV warn has occurred.

4

3

Not

Supported

R

0b

Not supported and always set to 0b.

LOW_ VIN

RW

LIVE (unlatched) status bit. Showing the value of PVIN relative to VIN_ON and

VIN_OFF.

0b: PVIN is ON.

1b: PVIN is OFF.

2:0

Not

R

000b

Not supported and always set to 000b.

Supported

All bits which can trigger SMBALERT have a corresponding bit in SMBALERT_MASK .

LOW_VIN vs VIN_UVW

The LOW_VIN bit is an information only (will not assert SMBALERT) flag which indicates that the device is not

converting power because its PVIN voltage is less than VIN_ON or the VDD5 voltage is less than its UVLO to

enable conversion. LOW_VIN asserts initially at reset but does not assert SMBALERT.

The VIN_UVW bit is a latched status bit, can assert SMBALERT if it is triggered to alert the host of an input

voltage issue. VIN_UVW IS masked until the first time the sensed input voltage exceeds the VIN_ON threshold.

English Data Sheet: SLUSF26

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7.6.59 (7Dh) STATUS_TEMPERATURE

CMD Address

Write Transaction:

Read Transaction:

Format:

7Dh

Write Byte

Read Byte

Unsigned Binary (1 byte)

Phased:

Yes

NVM Back-up:

Updates:

No

On-the-fly

The STATUS_TEMPERATURE command returns one data byte with contents as follows. All supported bits can

be cleared either by CLEAR_FAULTS, or individually by writing 1b to the (7Dh) STATUS_TEMPERATURE

register in their position, per the PMBus 1.3.1 Part II specification section 10.2.4.

图7-65. (7Dh) STATUS_TEMPERATURE Register Map

7

6

5

R

0

4

R

0

3

R

0

2

R

0

1

R

0

R

0

RW

OTF

RW

OTW

LEGEND: R/W = Read/Write; R = Read only

表7-76. Register Field Descriptions

Bit

Field

Access

Reset

Description

7

OTF

RW

0b

0b: Latched flag indicating OT fault has NOT occurred.

1b: Latched flag indicating OT fault has occurred.

6

OTW

RW

R

0b

0d

0b: Latched flag indicating OT warn has NOT occurred.

1b: Latched flag indicating OT warn has occurred

5:0

Not

Not supported and always set to 000000b.

supported

All bits which can trigger SMBALERT have a corresponding bit in SMBALERT_MASK.

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7.6.60 (7Eh) STATUS_CML

CMD Address

Write Transaction:

Read Transaction:

Format:

7Eh

Write Byte

Read Byte

Unsigned Binary (1 byte)

Phased:

Yes

NVM Back-up:

Updates:

No

On-the-fly

The STATUS_CML command returns one data byte with contents relating to communications, logic, and

memory as follows. All supported bits can be cleared either by CLEAR_FAULTS, or individually by writing 1b to

the (7Eh) STATUS_CML register in their position, per the PMBus 1.3.1 Part II specification section 10.2.4.

图7-66. (7Eh) STATUS_CML Register Map

7

6

5

4

3

2

R

0

1

0

R

0

RW

IVC

RW

IVD

RW

PEC

RW

MEM

RW

PROC_FLT

COMM

LEGEND: R/W = Read/Write; R = Read only

表7-77. Register Field Descriptions

Bit

Field

Access

Reset

Description

7

IVC

RW

0b

0b: Latched flag indicating invalid or unsupported command was NOT received.

1b: Latched flag indicating an invalid or unsupported command was received.

6

5

4

3

2

1

0

IVD

PEC

RW

R

0b

0b: Latched flag indicating invalid or unsupported data was NOT received.

1b: Latched flag indicating an invalid or unsupported data was received.

0b: Latched flag indicating NO packet error check has failed.

1b: Latched flag indicating a packet error check has failed.

MEM

0b: Latched flag indicating NO memory error was detected.

1b: Latched flag indicating a memory error was detected.

PROC_FLT

0b: Latched flag indicating NO logic core error was detected.

1b: Latched flag indicating a logic core error was detected.

Not

supported

Not supported and always set to 0b.

COMM

RW

R

0b: Latched flag indicating NO communication error detected.

1b: Latched flag indicating communication error detected.

Not

Not supported and always set to 0b.

supported

All bits which can trigger SMBALERT have a corresponding bit in SMBALERT_MASK.

Loop followers will report a Back-Channel communications issue as a CML fault on their phase.

The corresponding bit STATUS_BYTE is an OR’ing of the supported bits in this command. When a fault

condition in this command occurs, the corresponding bit in STATUS_BYTE is updated. Likewise, if this byte is

individually cleared (for example, by a write of 1 to a latched condition), it must clear the corresponding bit in

STATUS_BYTE.

English Data Sheet: SLUSF26

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7.6.61 (7Fh) STATUS_OTHER

CMD Address

Write Transaction:

Read Transaction:

Format:

7Fh

Write Byte

Read Byte

Unsigned Binary (1 byte)

Phased:

No

NVM Back-up:

Updates:

No

On-the-fly

The STATUS_OTHER command returns one data byte with information not specified in the other STATUS bytes.

图7-67. (7Fh) STATUS_OTHER Register Map

7

6

5

4

3

2

1

0

R

RW

FIRST_

TO_ALERT

0

LEGEND: R/W = Read/Write; R = Read only

表7-78. Register Field Descriptions

Bit

7:1

0

Field

Access

R

Reset

Description

Reserved

0h

Reserved

FIRST_ TO_

ALERT

RW

0b

0b: Latched flag indicating that this device was NOT the first to assert SMBALERT.

This can mean either that the SMBALERT signal is not asserted (or has since been

cleared), or that it is asserted, but this device was not the first on the bus to assert

it.

1b: Latched flag indicating that this device was the first to assert SMBALERT.

The corresponding bit STATUS_BYTE is an OR’ing of the supported bits in this command. When a fault

condition in this command occurs, the corresponding bit in STATUS_BYTE is updated. Likewise, if this byte is

individually cleared (for example, by a write of 1 to a latched condition), it must clear the corresponding bit in

STATUS_BYTE.

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7.6.62 (80h) STATUS_MFR_SPECIFIC

CMD Address

Write Transaction:

Read Transaction:

Format:

80h

Write Byte

Read Byte

Unsigned Binary (1 byte)

Phased:

Yes

NVM Back-up:

Updates:

No

On-the-fly

The STATUS_MFR_SPECIFIC command returns one data byte with contents regard of communications, logic,

and memory as follows. All supported bits can be cleared either by CLEAR_FAULTS, or individually by writing 1b

to the (80h) STATUS_MFR_SPECIFIC register in their position, per the PMBus 1.3.1 Part II specification section

10.2.4.

图7-68. (80h) STATUS_MFR_SPECIFIC Register Map

7

6

R

5

R

0

4

R

0

3

2

1

0

R

0

RW

POR

RW

BCX

RW

SELF

RESET

SYNC

LEGEND: R/W = Read/Write; R = Read only

表7-79. Register Field Descriptions

Bit

Field

Access

Reset

Description

7

POR

RW

0b

0: No Power-On Reset Fault has been detected.

1: A Power-On Reset Fault has been detected.

This bit must be set if: Power-On Self-Check of Internal Trim values,

USER_STORE NVM check-sum, or Pin Detection reports an invalid result.

6

SELF

R

0b

LIVE (unlatched) status bit. Showing the status of the Power-On Self-Check.

0b: Power On Self-Check is complete. All expected BCX loop followers have

responded.

1b: Power-On Self-Check is in progress. One or more BCX loop followers have not

responded.

5:4

3

Not

supported

R

00b

0b:

0b

Not supported and always set to 00b.

RESET

RW

R

0b: A RESET_ VOUT event has NOT occurred.

1b: A RESET_ VOUT event has occurred.

2

BCX

0b: A BCX fault event has NOT occurred.

1b: A BCX fault event has occurred.

1

SYNC

0b

0b: No SYNC fault has been detected.

1b: A SYNC fault has been detected.

0

Not

0b

Not supported and always set to 0b.

supported

Per the PMBus Spec writing a 1 to any bit in a STATUS register shall clear that bit if it is set. All bits which can

trigger SMBALERT have a corresponding bit in SMBALERT_MASK.

English Data Sheet: SLUSF26

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7.6.63 (88h) READ_VIN

CMD Address

Write Transaction:

Read Transaction:

Format:

88h

N/A

Read Word

SLINEAR11 per CAPABILITY

Phased:

Yes

NVM Back-up:

Update Rate:

Supported Range:

No

1ms

0 - 24 V

The READ_VIN command returns the output current in amperes.

图7-69. (88h) READ_VIN Register Map

15

14

13

12

11

10

9

8

R

READ_VIN_EXP

READ_VIN_MAN

7

6

5

4

3

2

1

0

R

READ_VIN_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-80. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:11

READ_

VIN_ EXP

RW

Input

voltage

Linear format two’s complement exponent

Linear format two’s complement mantissa

10:0

READ_

RW

Input

VIN_ MAN

voltage

Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPS546D24S

responds as follows:

• Set the CML bit in STATUS_BYTE.

• Set the CML_IVC (bit 7) bit in STATUS_CML.

• Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

PHASE Behavior

When PHASE = FFh, READ_VIN returns the PVIN voltage of the Loop Controller device.

When PHASE != FFh, READ_VIN returns the PVIN voltage of the device assigned to the current PHASE.

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7.6.64 (8Bh) READ_VOUT

CMD Address

Write Transaction:

Read Transaction:

Format:

8Bh

N/A

Read Word

ULINEAR16 per VOUT_MODE.

Phased:

Yes

NVM Back-up:

Update Rate:

Supported Range

No

1 ms

0 V to 6.0 V

The READ_VOUT command returns the actual, measured output voltage.

图7-70. (8Bh) READ_VOUT Register Map

15

R

14

R

13

12

11

10

9

8

R

READ_VOUT

7

6

5

4

3

2

1

0

R

LEGEND: R/W = Read/Write; R = Read only

表7-81. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:0

READ_

VOUT

RW

Current

Status

Output voltage reading, per VOUT_ MODE

READ_VOUT will report the voltage at the VOSNS pin with respect to AGND when a device is configured as a

loop follower (GOSNS = BP1V5). In this configuration, VOUT_SCALE_LOOP is ignored and VOSNS must be

externally scaled to maintain a voltage between 0 V and 0.75 V for proper reporting of the VOSNS voltage.

Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPS546D24S

responds as follows:

• Set the CML bit in STATUS_BYTE.

• Set the CML_IVC (bit 7) bit in STATUS_CML.

• Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

English Data Sheet: SLUSF26

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7.6.65 (8Ch) READ_IOUT

CMD Address

Write Transaction:

Read Transaction:

Format:

8Ch

N/A

Read Word

SLINEAR11 per CAPABILITY

Phased:

Yes

NVM Back-up:

Update Rate:

Supported Range:

No

1 ms

-15 A to 90 A per Phase

The READ_IOUT command returns the output current in amperes.

图7-71. (8Ch) READ_IOUT Register Map

15

14

13

12

11

10

9

8

R

READ_IOUT_EXP

READ_IOUT_MAN

7

6

5

4

3

2

1

0

R

READ_IOUT_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-82. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:11

READ_

IOUT_ EXP

RW

Current

Status

Linear format two’s complement exponent

Linear format two’s complement mantissa

10:0

READ_

IOUT_ MAN

RW

Current

Status

Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPS546D24S

responds as follows:

• Set the CML bit in STATUS_BYTE.

• Set the CML_IVC (bit 7) bit in STATUS_CML.

• Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

PHASE Behavior

When PHASE = FFh, READ_IOUT returns the total current for the stack of devices supporting a single output.

When PHASE != FFh, READ_IOUT returns the measured current of the device assigned to the current PHASE.

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7.6.66 (8Dh) READ_TEMPERATURE_1

CMD Address

Write Transaction:

Read Transaction:

Format:

8Dh

N/A

Read Word

SLINEAR11 per CAPABILITY

Phased:

Yes

NVM Back-up:

Update Rate:

Supported Range:

No

300 μs

-40°C to 175°C

The READ_TEMPERATURE_1 command returns the maximum power stage temperature in degrees Celsius.

图7-72. (8Dh) READ_TEMPERATURE_1 Register Map

15

R

14

R

13

12

11

10

9

8

R

READ_T1_EXP

READ_T1_MAN

7

6

5

4

3

2

1

0

R

READ_T1_MAN

LEGEND: R/W = Read/Write; R = Read only

表7-83. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:11

READ_ T1_

EXP

RW

Current

Status

Linear format two’s complement exponent. LSB = 1°C

Linear format two’s complement mantissa

10:0

READ_ T1_

MAN

RW

Current

Status

Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPS546D24S

responds as follows:

• Set the CML bit in STATUS_BYTE.

• Set the CML_IVC (bit 7) bit in STATUS_CML.

• Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

PHASE Behavior

When PHASE = FFh, READ_TEMPERATURE_1 returns the temperature of the hottest of device in the stack of

devices supporting a single output.

When PHASE ! = FFh, READ_TEMPERATURE_1 returns the measured temperature of the device assigned to

the current PHASE.

English Data Sheet: SLUSF26

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7.6.67 (98h) PMBUS_REVISION

CMD Address

Write Transaction:

Read Transaction:

Format:

98h

N/A

Read Byte

Unsigned Binary (1 byte)

Phased:

No

Max Transaction Time:

0.25 ms

The PMBUS_REVISION command reads the revision of the PMBus to which the device is compliant.

图7-73. (98h) PMBUS_REVISION Register Map

7

6

5

4

3

2

1

0

R

PART_I

PART_II

LEGEND: R/W = Read/Write; R = Read only

表7-84. Register Field Descriptions

Bit

Field

Access

Reset

Description

7:4

R

0011b

0011b: Compliant to PMBus Rev 1.3, Part 1

0011b: Compliant to PMBus Rev 1.3, Part 2

PART_ I

PART_ II

3:0

R

0011b

Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPS546D24S

responds as follows:

• Set the CML bit in STATUS_BYTE.

• Set the CML_IVC (bit 7) bit in STATUS_CML.

• Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

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7.6.68 (99h) MFR_ID

CMD Address

Write Transaction:

Read Transaction:

Format:

99h

Write Block

Read Block

Unsigned Binary (3 bytes)

No

Phased:

NVM Back-up:

EEPROM

The MFR_ID command loads the unit with 3 bytes that contains the manufacturer’s ID. This is typically done

once at the time of manufacture.

图7-74. (99h) MFR_ID Register Map

23

22

21

20

19

18

17

16

RW

MFR_ID

15

14

13

12

11

10

9

8

RW

7

6

5

4

3

2

1

0

RW

LEGEND: R/W = Read/Write; R = Read only

表7-85. Register Field Descriptions

Bit

Field

Access

Reset

Description

23:0

MFR_ ID

RW

NVM

3 bytes of arbitrarily writable user-store NVM for manufacturer ID information.

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7.6.69 (9Ah) MFR_MODEL

CMD Address

Write Transaction:

Read Transaction:

Format:

9Ah

Write Block

Read Block

Unsigned Binary (3 bytes)

No

Phased:

NVM Back-up:

EEPROM

The MFR_MODEL command loads the unit with 3 bytes that contains the manufacturer’s ID. This is typically

done once at the time of manufacture.

图7-75. (9Ah) MFR_MODEL Register Map

23

22

21

20

19

18

17

16

RW

MFR_MODEL

15

14

13

12

11

10

9

8

RW

7

6

5

4

3

2

1

0

RW

LEGEND: R/W = Read/Write; R = Read only

表7-86. Register Field Descriptions

Bit

Field

Access

Reset

Description

23:0

MFR_

RW

NVM

3 bytes of arbitrarily writable user-store NVM for manufacturer model information

MODEL

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7.6.70 (9Bh) MFR_REVISION

CMD Address

Write Transaction:

Read Transaction:

Format:

9Bh

Write Block

Read Block

Unsigned Binary (3 bytes)

No

Phased:

NVM Back-up:

EEPROM

The MFR_REVISION command loads the unit with 3 bytes that contains the power supply manufacturer’s

revision number. This is typically done once at the time of manufacture.

图7-76. (9Bh) MFR_REVISION Register Map

23

22

21

20

19

18

17

16

RW

MFR_REV

15

14

13

12

11

10

9

8

RW

7

6

5

4

3

2

1

0

RW

LEGEND: R/W = Read/Write; R = Read only

表7-87. Register Field Descriptions

Bit

Field

Access

Reset

Description

23:0

MFR_ REV

RW

NVM

3 bytes of arbitrarily writable user-store NVM for manufacturer revision information

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7.6.71 (9Eh) MFR_SERIAL

CMD Address

Write Transaction:

Read Transaction:

Format:

9Eh

Write Block

Read Block

Unsigned Binary (3 bytes)

No

Phased:

NVM Back-up:

EEPROM

The MFR_SERIAL command loads the unit with 3 bytes that contains the power supply manufacturer’s serial

number. This is typically done once at the time of manufacture.

图7-77. (9Eh) MFR_SERIAL Register Map

23

22

21

20

19

18

17

16

RW

MFR_SERIAL

15

14

13

12

11

10

9

8

RW

7

6

5

4

3

2

1

0

RW

LEGEND: R/W = Read/Write; R = Read only

表7-88. Register Field Descriptions

Bit

Field

Access

Reset

Description

23:00

MFR_

RW

NVM

Arbitrary 3-byte Serial Number assigned by manufacturer

SERIAL

Note: Because the value for MFR_SERIAL is included in the NVM memory store used to calculate the

NVM_CHECKSUM, assigning a unique MFR_SERIAL value will also result in a unique NVM_CHECKSUM

value.

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7.6.72 (ADh) IC_DEVICE_ID

CMD Address

Write Transaction:

Read Transaction:

Format:

ADh

N/A

Read Block

Unsigned Binary (6 bytes)

No

Phased:

The IC_DEVICE_ID command is used to either set or read the type or part number of an IC embedded within a

PMBus that is used for the PMBus interface.

图7-78. (ADh) IC_DEVICE_ID Register Map

47

R

46

R

45

44

43

42

41

R

40

R

IC_DEVICE_ID[47:40]

39

R

38

R

37

R

36

R

35

R

34

R

33

R

32

R

IC_DEVICE_ID[39:32]

31

R

30

R

29

R

28

R

27

R

26

R

25

R

24

R

IC_DEVICE_ID[31:24]

23

R

22

R

21

R

20

R

19

R

18

R

17

R

16

R

IC_DEVICE_ID[23:16]

15

R

14

R

13

R

12

R

11

R

10

R

9

8

R

IC_DEVICE_ID[15:8]

7

6

5

4

3

2

1

0

R

IC_DEVICE_ID[7:0]

LEGEND: R/W = Read/Write; R = Read only

表7-89. Register Field Descriptions

Bit

Field

Access

Reset

Description

47:0

IC_

R

See text. See the table below.

DEVICE_ ID

表7-90. IC_DEVICE_ID Values

Byte Number (Bit

Indices)

Byte 0 (7:0)

54h

Byte 1 (15:8)

Byte 2 (23:16)

Byte 3 (31:24)

Byte 4 (39:32)

Byte 5 (47:40)

TPS546D24S

49h

54h

6Bh

24h

62h

Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, TPS546D24S

responds as follows:

• Set the CML bit in STATUS_BYTE.

• Set the CML_IVC (bit 7) bit in STATUS_CML.

• Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

English Data Sheet: SLUSF26

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7.6.73 (AEh) IC_DEVICE_REV

CMD Address

Write Transaction:

Read Transaction:

Format:

AEh

N/A

Read Block

Unsigned Binary (2 bytes)

No

Phased:

The IC_DEVICE_REV command is used to either set or read the revision of the IC.

图7-79. (AEh) IC_DEVICE_REV Register Field Descriptions

15

R

14

R

13

12

11

10

9

8

R

MAJOR_REV

MINOR_REV

7

6

5

4

3

2

1

0

R

SUB_MINOR_REV

LEGEND: R/W = Read/Write; R = Read only

Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPS546D24S

responds as follows:

• Set the CML bit in STATUS_BYTE.

• Set the CML_IVC (bit 7) bit in STATUS_CML.

Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

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7.6.74 (B1h) USER_DATA_01 (COMPENSATION_CONFIG)

CMD Address

Write Transaction:

Read Transaction:

Format:

B1h

Write Block

Read Block

Unsigned Binary (5 bytes)

No

Phased:

NVM Back-up:

EEPROM or Pin Detection

Conversion Disable: on-the-fly. Conversion Enable: hardware update blocked. To update hardware

after write while enabled, store to NVM with (15h) STORE_USER_ALL and (16h)

RESTORE_USER_ALL or cycle AVIN below UVLO.

Updates:

Configure the control loop compensation.

图7-80. (B1h) USER_DATA_01 (COMPENSATION_CONFIG) Register Map

39

38

37

36

35

34

33

32

RW

SEL_CZI[1:0]

SEL_CPI[4:0]

SEL_CZI_MUL

31

R

30

29

28

27

26

25

24

RW

SEL_RVI[5:0]

SEL_CZI[3:2]

23

22

21

20

19

18

17

16

RW

0

RW

SEL_CZV[1:0]

SEL_CPV[4:0]

15

14

13

12

11

10

9

8

RW

SEL_RVV[5:0]

SEL_CZV[3:2]

SEL_GMI[1:0]

7

RW

0

6

RW

0

5

4

3

RW

0

2

RW

0

1

0

RW

SEL_GMV[1:0]

LEGEND: R/W = Read/Write; R = Read only

表7-91. Register Field Descriptions

Bit

Field

Access

Reset

Description

25:24,39:38 SEL_CZI[3:

0]

RW

NVM

Selects the value of current loop integrating capacitor.

CZI = 6.66 pF x CZI_MUL x 2^SEL_GMI[1:0]x SEL_CZI[3:0]

37:33

SEL_CPI[4:

0]

RW

NVM

Selects the value of current loop filter capacitor.

CPI = 3.2 pF x SEL_CPI[4:0]

32

SEL_CZI_M

UL

Selects the value of current loop integrating capacitor multiplier.

0b: CZI_MUL = 1

1b: CZI_MUL = 2

31:26

SEL_RVI[5:

0]

RW

NVM

Selects the value of current loop mid-band gain resistor.

RVI = 5 kΩx SEL_RVI[5:0]

9:8, 23:22 SEL_CZV[3:

0]

Selects the value of voltage loop integrating capacitor.

CZV = 125 pF x 2^SEL_GMV[1:0]x SEL_CZV[3:0]

21:17

SEL_CPV[4:

0]

Selects the value of voltage loop filter capacitor.

CPV = 6.25 pF x SEL_CPV[4:0]

16

Reserved

RW

NVM

Reserved, set to 0b

15:10

SEL_RVV[5:

0]

Selects the value of voltage loop mid-band gain resistor.

RVV = 5 kΩx SEL_RVV[5:0]

English Data Sheet: SLUSF26

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表7-91. Register Field Descriptions (continued)

Bit

7:6

5:4

Field

Access

Reset

NVM

Description

Reserved

RW

Reserved, set to 00b

SEL_GMV[1

:0]

RW

Selects the value of voltage error transconductance.

GMV = 25 µS x 2^SEL_GMV[1:0]

3:2

1:0

Reserved

RW

NVM

Reserved, set to 00b

SEL_GMI[1:

0]

Selects the value of current error transconductance.

GMI = 25 µS x 2^SEL_GMI[1:0]

(B1h) USER_DATA_01 (COMPENSATION_CONFIG) can be written to while output conversion is enabled, but

updating those values to hardware will be blocked. To update the value used by the control loop:

• Disable conversion, then write to (B1h) USER_DATA_01 (COMPENSATION_CONFIG).

• Write to (B1h) USER_DATA_01 (COMPENSATION_CONFIG) while conversion is enabled, store PMBus

values to NVM using (15h) STORE_USER_ALL, clear the (B1h) USER_DATA_01

(COMPENSATION_CONFIG) bit in (EEh) MFR_SPECIFIC_30 (PIN_DETECT_OVERRIDE), then cycle AVIN

or use the (16h) RESTORE_USER_ALL command.

Due to the complexity of translating the 5-byte HEX value of (B1h) USER_DATA_01

(COMPENSATION_CONFIG) into analog compensation values, users are recommended to use the tools

available on the TPS546D24S product folder such as the TPS546x24S Compensation and Pin-Strap Resistor

Calculator design tool.

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7.6.75 (B5h) USER_DATA_05 (POWER_STAGE_CONFIG)

CMD Address

Write Transaction:

Read Transaction:

Format:

B5h

Write Block (per PMBus Spec, even though 1 data byte)

Read Block (per PMBus Spec, even though 1 data byte)

Unsigned Binary (1 byte)

No

Phased:

NVM Back-up:

Updates:

EEPROM

On-the-fly

Max Transaction Time:

Max Action Delay:

1.0 ms

1.0 ms (not time critical)

POWER_STAGE_CONFIG allows the user to adjust the VDD5 regulator voltage.

图7-81. (B5h) USER_DATA_05 (POWER_STAGE_CONFIG) Register Map

7

6

5

4

3

2

1

0

RW

R

SEL_VDD5

Reserved

LEGEND: R/W = Read/Write; R = Read only

表7-92. Register Field Descriptions

Bit

Field

Access

Reset

Description

7:4

SEL_VDD5

RW

NVM

3h: VDD5 = 3.9 V (Not Recommended for Production)

4h: VDD5 = 4.1 V

5h: VDD5 = 4.3 V

6h: VDD5 = 4.5 V

7h: VDD5 = 4.7 V

8h: VDD5 = 4.9 V

9h: VDD5 = 5.1 V

Ah: VDD5 = 5.3 V

Other: Invalid

3:0

Reserved

R

0000b

Reserved. Set to 0000b.

Setting 30h is not recommended for production use unless an external VDD5 voltage is provided because the

3.9-V LDO setting can result in a VDD5 voltage less than the VDD5 undervoltage lockout required to enable

conversion and can result in the TPS546D24S device being unable to enable conversion without an external

VDD5 voltage.

English Data Sheet: SLUSF26

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7.6.76 (D0h) MFR_SPECIFIC_00 (TELEMETRY_CONFIG)

CMD Address

Write Transaction:

Read Transaction:

Format:

D0h

Write Block

Read Block

Unsigned Binary (6 bytes)

No

Phased:

NVM Back-up:

Updates:

EEPROM

On-The-Fly

Configure the priority and averaging for each channel of the internal telemetry system.

The internal telemetry system shares a single ADC across each measurement. The priority setting allows the

user to adjust the relative rate of measurement of each telemetry value. The ADC will first measure each value

with a priority A value. With each pass through all priority A measurements, one priority B measurement will be

taken. With each pass through all priority B measurements, one priority C measurement will be taken.

Example: If output voltage has priority A and output current has priority B, and temperature has priority C, the

telemetry sequence will be VOUT IOUT VOUT TEMPERATURE VOUT IOUT VOUT TEMPERATURE.

图7-82. (D0h) MFR_SPECIFIC_00 (TELEMETRY_CONFIG) Register Map

47

46

45

44

43

42

41

40

RW

Reserved priority

Reserved

Reserved averaging

39

38

37

36

RW

35

34

33

RW

32

RW

Reserved priority

Reserved

Reserved averaging

31

R

30

29

28

RW

27

26

25

RW

24

RW

RD_VI_PRI

Reserved

RD_VI_AVG

23

22

21

20

RW

19

18

17

RW

16

RW

RD_TMP_PRI

Reserved

RD_TMP_AVG

15

14

13

12

RW

11

10

9

8

RW

RD_IO_PRI

Reserved

RD_IO_AVG

7

6

5

4

3

2

1

0

RW

RD_VO_PRI

Reserved

RD_VO_AVG

LEGEND: R/W = Read/Write; R = Read only

表7-93. Register Field Descriptions

Bit

Field

Access

R

Reset

Description

47:40

39:32

31:30

Not used

RD_VI_PRI

00h

Reserved. Set values to 00h.

Reserved. Set values to 03h.

RW

NVM

RW

00b: Assign priority A to input voltage telemetry.

01b: Assign priority B to input voltage telemetry.

10b: Assign priority C to input voltage telemetry.

11b: Disable input voltage telemetry.

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表7-93. Register Field Descriptions (continued)

Bit

Field

Access

Reset

Description

31:24

RD_VI_AVG

RW

NVM

0d - 5d: READ_VIN Rolling average of 2^Nsamples

6d-7d: Invalid

23:22

RD_TMP_P

RI

RW

NVM

00b: Assign priority A to temperature telemetry.

01b: Assign priority B to temperature telemetry.

10b: Assign priority C to temperature telemetry.

11b: Invalid

21:19

18:16

Reserved

RW

NVM

Reserved. Set to 000b.

RD_TMP_A

VG

0d - 5d: READ_TEMPERATURE_1 Rolling average of 2^Nsamples

6d-7d: Invalid

15:14

RD_IO_PRI

RW

NVM

00b: Assign priority A to output current telemetry.

01b: Assign priority B to output current telemetry.

10b: Assign priority C to output current telemetry.

11b: Disable output current telemetry.

13:11

10:8

Reserved

RW

NVM

Reserved. Set to 000b.

RD_IO_AVG

0d - 5d: READ_IOUT Rolling average of 2^Nsamples

6d-7d: Invalid

7:6

RD_VO_PRI

RW

NVM

00b: Assign priority A to output voltage telemetry.

01b: Assign priority B to output voltage telemetry.

10b: Assign priority C to output voltage telemetry.

11b: Disable output voltage telemetry.

5:3

2:0

Reserved

RW

NVM

Reserved. Set to 000b.

RD_VO_AV

G

0d - 5d: READ_VOUT Rolling average of 2^Nsamples

6d-7d: Invalid

Disabling any telemetry value will force the associated READ PMBus command to report 0000h.

Because temperature telemetry is used for Overtemperature Protection, temperature telemetry cannot be

disabled.

English Data Sheet: SLUSF26

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7.6.77 (DAh) MFR_SPECIFIC_10 (READ_ALL)

CMD Address

Write Transaction:

Read Transaction:

Format:

DAh

NA

Read Block

Unsigned Binary (14 bytes)

Phased:

No

NVM Back-up:

READ_ALL provides for a 14-byte BLOCK read of STATUS_WORD and telemetry values to improve bus usage

for poling by combining multiple READ functions into a single command, eliminating the need for multiple

address and command code bytes.

图7-83. (DAh) MFR_SPECIFIC_10 (READ_ALL) Register Map

111

R

110

R

109

108

107

106

105

R

104

R

Not Supported = 00h

103

R

102

R

101

R

100

R

99

R

98

R

97

R

96

R

Not Supported = 00h

95

R

94

R

93

R

92

R

91

R

90

R

89

R

88

R

Not Supported = 00h

87

R

86

R

85

R

84

R

83

R

82

R

81

R

80

R

Not Supported = 00h

79

R

78

R

77

R

76

R

75

R

74

R

73

R

72

R

READ_VIN (MSB)

71

R

70

R

69

R

68

R

67

R

66

R

65

R

64

R

READ_VIN (LSB)

63

R

62

R

61

R

60

R

59

R

58

R

57

R

56

R

READ_TEMPERATURE1 (MSB)

55

R

54

R

53

R

52

R

51

R

50

R

49

R

48

R

READ_TEMPERATURE1 (LSB)

47

R

46

R

45

R

44

R

43

R

42

R

41

R

40

R

READ_IOUT (MSB)

39

R

38

R

37

R

36

R

35

R

34

R

33

R

32

R

READ_IOUT (LSB)

28 27

31

30

29

26

25

24

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R

READ_VOUT (MSB)

23

R

22

R

21

R

20

R

19

R

18

R

17

R

16

R

READ_VOUT (LSB)

15

R

14

R

13

R

12

R

11

R

10

R

9

8

R

STATUS_WORD (High Byte)

7

6

5

4

3

2

1

0

R

STATUS_BYTE

LEGEND: R/W = Read/Write; R = Read only

表7-94. Register Field Descriptions

Bit

Field

Access

Reset

Description

111:96

READ_

DUTY_CYC

LE

R

0000h

Not supported = 0000h

95:80

79:64

63:48

READ_ IIN

READ_ VIN

R

0000h

Not supported = 0000h

READ_VIN (Linear Format)

READ_

TEMPERAT

URE1

READ_ TEMPERATURE1 (Linear Format)

47:32

31:16

15:0

READ_

IOUT

R

0000h

READ_ IOUT (Linear Format)

READ_VOU

T

READ_ VOUT (ULinear16 Format, Per VOUT_MODE)

STATUS_WORD

STATUS_W

ORD

Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPS546D24S

responds as follows:

• Set the CML bit in STATUS_BYTE.

• Set the CML_IVC (bit 7) bit in STATUS_CML.

Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

English Data Sheet: SLUSF26

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7.6.78 (DBh) MFR_SPECIFIC_11 (STATUS_ALL)

CMD Address

Write Transaction:

Read Transaction:

Format:

DBh

NA

Read Block

Unsigned Binary (7 bytes)

Phased:

No

NVM Back-up:

STATUS_ALL provides for a 7-byte block of STATUS command codes. This can reduce bus usage to read

multiple faults.

图7-84. (DBh) MFR_SPECIFIC_11 (STATUS_ALL) Register Map

55

R

54

R

53

52

51

50

49

R

48

R

STATUS_MFR

47

R

46

R

45

R

44

R

43

R

42

R

41

R

40

R

STATUS_OTHER

39

R

38

R

37

R

36

35

R

34

R

33

R

32

R

STATUS_CML

31

R

30

R

29

R

28

R

27

R

26

R

25

R

24

R

STATUS_TEMPERATURE

23

R

22

R

21

R

20

R

19

R

18

R

17

R

16

R

STATUS_INPUT

15

R

14

R

13

R

12

R

11

R

10

R

9

8

R

STATUS_IOUT

7

6

5

4

3

2

1

0

R

STATUS_VOUT

LEGEND: R/W = Read/Write; R = Read only

表7-95. Register Field Descriptions

Bit

Field

Access

Reset

Description

55:48

STATUS_

MFR

R

Current

Status

STATUS_ MFR

47:40

39:32

31:24

STATUS_

OTHER

R

Current

Status

STATUS_ OTHER

STATUS_

CML

Current

Status

STATUS_ CML

STATUS_

TEMPERAT

URE

Current

Status

STATUS_ TEMPERATURE

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表7-95. Register Field Descriptions (continued)

Bit

Field

Access

Reset

Description

23:16

STATUS_

INPUT

R

Current

Status

STATUS_ INPUT

15:8

7:0

STATUS_

IOUT

R

Current

Status

STATUS_ IOUT

STATUS_ VOUT

STATUS_

VOUT

Current

Status

Attempts to write read-only commands cause the CML: invalid command (IVC) fault condition, the TPS546D24S

responds as follows:

• Set the CML bit in STATUS_BYTE.

• Set the CML_IVC (bit 7) bit in STATUS_CML.

• Notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

Writes to STATUS_ALL do not clear asserted status bits.

English Data Sheet: SLUSF26

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7.6.79 (DCh) MFR_SPECIFIC_12 (STATUS_PHASE)

CMD Address

Write Transaction:

Read Transaction:

Format:

DCh

Write Word

Read Word

Unsigned Binary (2 bytes)

Phased:

Yes

Updates:

On-the-fly

No

NVM Back-up:

When PHASE = FFh or 80h, reads to this command return a data word detailing which phases have

experienced fault conditions. When PHASE != FFh, reads to this command return a data worddetailing which

faults the current PHASE has experienced. PHASE number assignment is per PHASE_CONFIG. Bits

corresponding to unused (unassigned or disabled) phase numbers are always equal to 0b.

图7-85. (DCh) MFR_SPECIFIC_12 (STATUS_PHASE)

15

R

14

R

13

R

12

R

11

RW

0

10

RW

0

9

RW

0

8

RW

0

7

RW

0

6

RW

0

5

RW

0

4

RW

0

3

2

1

0

RW

PH3

RW

PH2

RW

PH1

RW

PH0

0

LEGEND: R/W = Read/Write; R = Read only

表7-96. Register Field Descriptions

Bit

15:4

3

Field

Reserved

PH3

Access

R

Reset

Description

0b

Reserved

RW

0b

0b: The TPS546D24S assigned to PHASE = 3d has NOT experienced a fault.

1b: The TPS546D24S assigned to PHASE = 3d has experienced a fault. Set

PHASE = 3d, and read STATUS_WORD or STATUS_ALL for more information.

2

1

0

PH2

PH1

PH0

RW

0b

0b: The TPS546D24S assigned to PHASE = 2d has NOT experienced a fault.

1b: The TPS546D24S assigned to PHASE = 2d has experienced a fault. Set

PHASE = 2d, and read STATUS_WORD or STATUS_ALL for more information.

0b: The TPS546D24S assigned to PHASE = 1d has NOT experienced a fault.

1b: The TPS546D24S assigned to PHASE = 1d has experienced a fault. Set

PHASE = 1d, and read STATUS_WORD or STATUS_ALL for more information.

0b: The TPS546D24S assigned to PHASE = 0d has NOT experienced a fault.

1b: The TPS546D24S assigned to PHASE = 0d has experienced a fault. Set

PHASE = 0d, and read STATUS_WORD or STATUS_ALL for more information.

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7.6.80 (E3h) MFR_SPECIFIC_19 (PGOOD_CONFIG)

CMD Address

Write Transaction:

Read Transaction:

Format

E3h

Write Word

Read Word

Unsigned Word

Phased:

No

NVM Backup:

Updates:

EEPROM or Pin Detect

Conversion Disable: see below. Conversion Enable: Read-Only

图7-86. (E3h) MFR_SPECIFIC_19 (PGOOD_CONFIG) Register Map

15

R

14

13

12

11

10

9

8

R

PGOOD_OFF_DELAY[3:0]

PGOOD_ON_DELAY[3:0]

7

R

6

R

5

R

4

R

3

2

1

0

RW

pgmOVF

pgmOVW

pgmUVW

pgmUVF

pgmOCW

pgmOCF

pgmINOVW

pgmINOVF

LEGEND: R/W = Read/Write; R = Read only

表7-97. Register Field Descriptions

Bit

Field

Access

Reset

Description

NVM

15:12

PGOOD_OF

F_DELAY[3:

0]

RW

Sets Delay from the detection of an unmasked Fault or Warning event to the

assertion of PGOOD low.

0d: Delay PGOOD high-low 1 PWM CLK

1d-15d: Delay PGOOD high-low 2^N+1 PWM CLKs

NVM

11:8

PGOOD_O

N_DELAY[3:

0]

RW

Sets Delay from the detection of no unmasked Fault or Warning events to the

release of PGOOD low.

0d: Delay PGOOD low-hight to 1 PWM CLK

1d-15d: Delay PGOOD low-high 2^N+1 PWM CLKs

7

6

5

4

3

2

1

0

pgmOVF

pgmOVW

pgmUVF

RW

NVM

0b: Output Overvoltage Fault can assert PGOOD low.

1b: Output Overvoltage Fault cannot assert PGOOD low.

0b: Output Overvoltage Warning can assert PGOOD low.

1b: Output Overvoltage Warning cannot assert PGOOD low.

0b: Output Undervoltage Fault can assert PGOOD low.

1b: Output Undervoltage Fault cannot assert PGOOD low.

pgmUVW

pgmOCW

pgmOCF

0b: Output Undervoltage Warning can assert PGOOD low.

1b: Output Undervoltage Warning cannot assert PGOOD low.

0b: Output Overcurrent Warning can assert PGOOD low.

1b: Output Overcurrent Warning cannot assert PGOOD low.

0b: Output Overcurrent Fault can assert PGOOD low.

1b: Output Overcurrent Fault cannot assert PGOOD low.

pgmINOVW

pgmINOVF

0b: Input Overvoltage Warning can assert PGOOD low.

1b: Input Overvoltage Warning cannot assert PGOOD low.

0b: Input Overvoltage Fault can assert PGOOD low.

1b: Input Overvoltage Fault cannot assert PGOOD low.

Power Good indicates the status of the converter. (E3h) MFR_SPECIFIC_19 (PGOOD_CONFIG) provides

control of the delays asserting and releasing Power Good. Power Good is always low while conversion is

English Data Sheet: SLUSF26

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disabled, during (60h) TON_DELAY, (61h) TON_RISE, (65h) TOFF_FALL, and during a fault shut-down or

hiccup delay. PGOOD_OFF_DELAY is bypassed during (65h) TOFF_FALL and during a fault shut-down or

hiccup. Power Good will still be asserted on an unmasked fault event unless that fault's RESPONSE command

is configured to Continue Operating without Interruption.

PGOOD_OFF_DELAY and PGOOD_ON_DELAY are sensed and timed independently from each other. If

PGOOD_ON_DELAY is less than PGOOD_OFF_DELAY and an unmasked fault or warning event lasts less than

PGOOD_OFF_DELAY - PGOOD_ON_DELAY, Power Good will not be asserted low during the fault or warning

events.

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7.6.81 (E4h) MFR_SPECIFIC_20 (SYNC_CONFIG)

CMD Address

Write Transaction:

Read Transaction:

Format:

E4h

Write Byte

Read Byte

Unsigned Binary

No

Phased:

NVM Back-up:

Updates:

EEPROM or Pin Detect

On-the-fly

图7-87. (E4h) MFR_SPECIFIC_20 (SYNC_CONFIG) Register Map

7

6

5

4

3

2

1

0

RW

SYNC_ DIR

SYNC_EDGE

10000b

LEGEND: R/W = Read/Write; R = Read only

表7-98. Register Field Descriptions

Bit

Field

Access

Reset

Description

7:6

SYNC_DIR

RW

NVM

00b: SYNC disabled

01b: Enable SYNC OUT.

10b: Enable SYNC IN.

11b: Enable Auto Detect SYNC

5

SYNC_EDG

E

RW

NVM

0b: Synchronize to falling edge of SYNC.

1b: Synchronize to rising edge of SYNC.

4:0

Not

10000b

Not supported. Set to 10000b.

supported

Attempts to write (E4h) MFR_SPECIFIC_E4 (SYNC_CONFIG) to any value outside those specified as valid will

be considered invalid/unsupported data and cause the TPS546D24S to respond by flagging the appropriate

status bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

When SYNC_DIR = 11b - Enable Auto Detect, the TPS546D24S will select SYNC_IN or SYNC_OUT based on

the state of the SYNC pin when the Enable Condition, as defined by ON_OFF_CONFIG is met. If the SYNC_PIN

is >2 V or switching faster than 75% of FRQUENCY_SWITCH, SYNC_IN shall be enabled. If the SYNC_PIN is

less than 0.8 V and not switching, SYNC_OUT will be selected.

Changing SYNC_DIR from SYNC_IN to SYNC_OUT on a multi-phase stack while conversion is enabled but

prevented due to a SYNC_FAULT results in the internal oscillator operating at 70% of its nominal frequency.

Because this result is outside of the ensured SYNC_IN range of the loop follower device, this can result in

unsynchronized operation.

English Data Sheet: SLUSF26

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7.6.82 (ECh) MFR_SPECIFIC_28 (STACK_CONFIG)

CMD Address

Write Transaction:

Read Transaction:

Format

ECh

Write Word

Read Word

Unsigned Word

Phased:

No

NVM Backup:

Updates:

EEPROM or Pin Detect

Conversion Disable: see below. Conversion Enable: Read-Only

图7-88. (ECh) MFR_SPECIFIC_28 (STACK_CONFIG) Register Map

15

R

14

13

12

11

10

9

8

R

Reserved 0000h

7

6

5

4

3

2

1

0

R

RW

BCX_START

BCX_STOP

LEGEND: R/W = Read/Write; R = Read only

表7-99. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:8

Not

R

0000h

Reserved. Equal 0000h.

supported

7:4

3:0

BCX_STAR

T

R

0000b

NVM

BCX_Address for Stack Loop Controller. Equal to 0000b.

BCX_STOP

RW

0000b: Stand Alone, Single-phase

0001b: One Loop Follower, 2-phase

0010b: Two Loop Followers, 3-phase

0011b: Three Loop Followers, 4-phase

Other: Not supported / Invalid

Attempts to write (ECh) MFR_SPECIFIC_28 (STACK_CONFIG) to any value outside those specified as valid,

will be considered invalid/unsupported data and cause TPS546D24S to respond by flagging the appropriate

status bits and notifying the host according to the PMBus 1.3.1 Part II specification section 10.9.3.

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7.6.83 (EDh) MFR_SPECIFIC_29 (MISC_OPTIONS)

CMD Address

Write Transaction:

Read Transaction:

Format:

EDh

Write Word

Read Word

Unsigned Binary (2 bytes)

No

Phased:

NVM Backup:

Updates:

EEPROM

on-the-fly

MFR_SPECIFIC_29 is used to configure miscellaneous settings.

图7-89. (EDh) MFR_SPECIFIC_29 (MISC_OPTIONS) Register Map

15

14

13

12

11

10

9

8

RW

Reserv

ed

PEC

RESET_CNT

RESET_FLT

RESET#

Reserved

7

6

5

4

3

2

1

0

RW

Reserv

ed

Reserved

PULLUP#

FLT_CNT

ADC_RES

LEGEND: R/W = Read/Write; R = Read only

表7-100. Register Field Descriptions

Bit

Field

Access

Reset

Description

15

PEC

RW

NVM

0b: PEC Optional. Transactions received without PEC byte will be processed.

1b: PEC Required. Transactions received without PEC byte will be rejected as

invalid PEC.

14

13

12

RESET_CN

T

RW

NVM

0b: VOUT_COMMAND will be unchanged following a shutdown.

1b: VOUT_COMMAND will be changed to VBOOT on a Control or OPERATION

shutdown.

RESET_FLT

RESET#

0b: VOUT_COMMAND will be unchanged following a Fault Restart.

1b: VOUT_COMMAND will be changed to VBOOT on Restart from a Fault when

Fault Retry is set to Retry after Fault.

Sets the function of the PGD/RESET_B pin.

0b: PGD/RESET_B functions as PGOOD and internal pullup is disabled.

1b: PGD/RESET_B functions as RESET# and internal pullup is set by bit 3

PULLUP#.

11:3

3

Reserved

PULLUP#

RW

NVM

Reserved. Must be 000000000b

Sets the pullup of the PGD/RESET_B pin when RESET# = 1b.

0b: Internal pullup of PGD/RESET_B pin enabled when RESET# = 1b.

1b: Internal pullup of PGD/RESET_B pin disabled when RESET# = 1b.

2

FLT_CNT

ADC_RES

RW

NVM

0b: Fault Counter counts down one cycle on PWM cycle without fault

1b: Fault Counter resets counter to 0 on PWM cycle without fault

1:0

ADC Resolution Control

00b: Set ADC Resolution to 12-bit

01b: Set ADC Resolution to 10-bit

10b: Set ADC Resolution to 8-bit

11b: Set ADC Resolution to 6-bit

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7.6.84 (EEh) MFR_SPECIFIC_30 (PIN_DETECT_OVERRIDE)

CMD Address

Write Transaction:

Read Transaction:

Format:

EEh

Write Word

Read Word

Unsigned Binary (1 byte)

Phased:

No

NVM Backup:

Updates:

EEPROM

on-the-fly (pin detection occurs on POR only).

PMBUS specified that NVM (Default or User) stored values will overwrite Pin Programmed Values. Setting a

“1” in each bit of this register will prevent DEFAULT or USER STORE values from overwriting the Pin-

Programmed Value associated that bit.

图7-90. (EEh) MFR_SPECIFIC_30 (PIN_DETECT_OVERRIDE) Register Map

15

14

13

12

11

10

9

8

RW

STACK_CONFI

G

COMP_CONFI

G

Reserved

SYNC_CONFIG

Reserved

ADDRESS

7

6

5

4

3

2

1

0

RW

Reserved

INTERLEAVE

Reserved

TON_RISE

IOUT_OC

FREQ

VOUT

LEGEND: R/W = Read/Write; R = Read only

表7-101. Register Field Descriptions

Bit

15:13

12

Field

Access

RW

Reset

NVM

Description

Reserved

Not used and set to 000b.

STACK_CO

NFIG

RW

0b: At power-up or RESTORE, STACK_CONFIG will be reset to NVM value.

1b: At power-up or RESTORE, STACK_CONFIG will be reset to pin-detected

value.

11

SYNC_CON

FIG

RW

NVM

0b: At power-up or RESTORE, SYNC_CONFIG will be reset to NVM value.

1b: At power-up or RESTORE, SYNC_CONFIG will be reset to pin-detected value.

10

9

Reserved

RW

NVM

Not used and set to 0b or 1b.

COMP_CO

NFIG

0b: At power-up or RESTORE, COMPENSATION_CONFIG will be reset to NVM

value.

1b: At power-up or RESTORE, COMPENSATION_CONFIG will be reset to pin-

detected value.

8

ADDRESS

RW

NVM

0b: At power-up or RESTORE, DEVICE_ADDRESS will be reset to NVM value.

1b: At power-up or RESTORE, DEVICE_ADDRESS will be reset to pin-detected

value.

7:6

5

Reserved

RW

NVM

Not used and set to 00b.

INTERLEAV

E

0b: At power-up or RESTORE, INTERLEAVE will be reset to NVM value.

1b: At power-up or RESTORE, INTERLEAVE will be reset to pin-detected value.

4

3

Reserved

RW

NVM

Not used and set to 0b or 1b.

TON_RISE

0b: At power-up or RESTORE, TON_RISE will be reset to NVM value.

1b: At power-up or RESTORE, TON_RISE will be reset to pin-detected value.

2

IOUT_OC

FREQ

RW

NVM

0b: At power-up or RESTORE, IOUT_OC_FAULT_LIMIT and

IOUT_OC_WARN_LIMIT will be reset to NVM value.

1b: At power-up or RESTORE, IOUT_OC_FAULT_LIMIT and

IOUT_OC_WARN_LIMIT will be reset to pin-detected value.

1

RW

NVM

0b: At power-up or RESTORE, FREQUENCY_SWITCH will be reset to NVM value.

1b: At power-up or RESTORE, FREQUENCY_SWITCH will be reset to pin-

detected value.

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表7-101. Register Field Descriptions (continued)

Bit

Field

Access

Reset

Description

0

VOUT

RW

NVM

0b: At power-up or RESTORE, VOUT_COMMAND, VOUT_SCALE_LOOP,

VOUT_MAX, and VOUT_MIN will be reset to NVM value.

1b: At power-up or RESTORE, VOUT_COMMAND, VOUT_SCALE_LOOP,

VOUT_MAX, and VOUT_MIN will be reset to pin-detected value.

PIN_DETECT_OVERRIDE allows the user to force Pin Detected values to override the User Store NVM value

for various PMBus commands during Power On Reset and RESTORE_USER_ALL.

English Data Sheet: SLUSF26

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7.6.85 (EFh) MFR_SPECIFIC_31 (DEVICE_ADDRESS)

CMD Address

Write Transaction:

Read Transaction:

Format:

EFh

Write Byte

Read Byte

Unsigned Binary (1 bytes)

No

Phased:

NVM Backup:

Updates:

EEPROM or Pin Detect

on-the-fly

The DEVICE_ADDRESS command can be used to program or read-back the device address of digital

communication. Note, when a device address is updated, the TPS546D24S starts responding to the new

address immediately.

图7-91. (EFh) MFR_SPECIFIC_31 (DEVICE_ADDRESS) Register Map

7

R

0

6

5

4

3

2

1

0

RW

ADDR_PMBUS

LEGEND: R/W = Read/Write; R = Read only

表7-102. Register Field Descriptions

Bit

Field

Access

Reset

Description

7

Not

R

0b

Not supported. Set to b'0.

supported

6:0

ADDR_

PMBUS

RW

NVM/

Pinstrap

PMBus device address

There are a number of device address values which are reserved in the SMBus specification. The following

reserved addresses are invalid and can not be programmed:

• 0x0C

• 0x28

• 0x37

• 0x61

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7.6.86 (F0h) MFR_SPECIFIC_32 (NVM_CHECKSUM)

CMD Address

Write Transaction:

Read Transaction:

Format:

F0h

NA

Read Word

Unsigned Binary (2 bytes)

Phased:

No

NVM Back-up:

Updates:

EEPROM

At boot-up, and following NVM Store/Restore operations.

NVM_CHECKSUM reports the CRC-16 (polynomial 0x8005) checksum for the current NVM settings.

图7-92. (F0h) MFR_SPECIFIC_32 (NVM_CHECKSUM) Register Map

15

R

14

13

12

11

10

9

8

R

NVM_CHECKSUM

7

6

5

4

3

2

1

0

R

NVM_CHECKSUM

LEGEND: R/W = Read/Write; R = Read only

表7-103. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:0

NVM_

CHECKSU

M

R

Per NVM CRC16 for EEPROM settings.

Settings

English Data Sheet: SLUSF26

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7.6.87 (F1h) MFR_SPECIFIC_33 (SIMULATE_FAULT)

CMD Address

Write Transaction:

Read Transaction:

Format:

F1h

Write Word

Read Word

Unsigned Binary (2 bytes)

Phased:

Yes

No

NVM Back-up:

SIMULATE_FAULT will allow the user to simulate fault and warning conditions by triggering the output of the

detection circuit for that controls it. Multiple faults and or can be simulated at once.

图7-93. (F1h) MFR_SPECIFIC_F1 (SIMULATE_FAULT) Register Map

15

14

13

12

11

10

9

8

W/R

FAULT_PERSI SIM_TEMP_OT

SIM_IOUT_OC

F

SIM_VOUT_UV SIM_VOUT_OV

Reserved

SIM_VIN_OFF SIM_VIN_OVF

ST

F

7

6

5

4

3

2

1

0

W/R

WARN_PERSIS

T

SIM_IOUT_OC

W

SIM_VOUT_UV SIM_VOUT_OV

Reserved

SIM_VIN_UVW

Reserved

W

LEGEND: R/W = Read/Write; R = Read only

表7-104. Register Field Descriptions

Bit

Field

Access

Reset

Description

15

FAULT_PER

SIST

W/R

0b

0b: Simulated faults are automatically removed after one fault response.

1b: Simulated faults persist until SIMULATE_FAULTS is written again.

14

13

12

11

10

9

SIM_TEMP_

OTF

W/R

0b

0b: No change

1b: Simulate overtemperature fault

Reserved

0b: No change

1b: Not used

SIM_IOUT_

OCF

0b: No change

1b: Simulate output current overcurrent fault.

SIM_VIN_O

FF*

0b: No change

1b: Simulate PVIN undervoltage lockout.

SIM_VIN_O

VF

0b: No change

1b: Simulate PVIN overvoltage fault.

SIM_VOUT_

UVF

0b: No change

1b: Simulate VOUT undervoltage fault.

8

SIM_VOUT_

OVF*

0b: No change

1b: Simulate VOUT overvoltage fault.

7

WARN_PER

SIST

Default

Settings

0b: Simulated warnings are automatically removed after one Fault response.

1b: Simulated warnings persist until SIMULATE_FAULTS is written again.

6

Reserved

Default

Settings

0b: No change

1b: Not used

5

Reserved

Default

Settings

0b: No change

1b: Not used

4

SIM_IOUT_

OCW

Default

Settings

0b: No change

1b: Simulate output current overcurrent warning.

3

SIM_VIN_U

VW

Default

Settings

0b: No change

1b: Simulate PVIN undervoltage warning.

2

Reserved

Default

Settings

0b: No change

1b: Not used

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表7-104. Register Field Descriptions (continued)

Bit

Field

Access

Reset

Description

1

SIM_VOUT_

UVW

W/R

Default

Settings

0b: No change

1b: Simulate VOUT undervoltage warning.

0

SIM_VOUT_

OVW

W/R

Default

Settings

0b: No change, 1b: Simulate VOUT overvoltage warning.

*Only SIM_VIN_OFF and SIM_VOUT_OVF are allowed to trigger their analog comparator while conversion is

disabled. All other faults, including SIM_TEMP_OTF and SIM_VIN_OVF will only simulate while conversion is

enabled to allow these faults to simulate repeated shut-down and restart responses when FAULT_PERSIST is

selected.

English Data Sheet: SLUSF26

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7.6.88 (FAh) MFR_SPECIFIC_42 (PASSKEY)

CMD Address

Write Transaction:

Read Transaction:

Format:

FAh

Write Word

Read Word

Unsigned Binary (2 bytes)

No

Phased:

NVM Back-up:

Updates:

EEPROM

At Boot-up

PASSKEY sets a User Programmable 16-bit passkey to disable write access to EXT_WRITE_PROTECT and

User Store Non-Volatile Memory (NVM). When PASSKEY is set to 0000h, access to STORE_USER_ALL is

enabled and writes to PASSKEY will update the active register value for PASSKEY. When PASSKEY is set to a

value other than 0000h during boot-up, write access to EXT_WRITE_PROTECT and STORE_USER_ALL is

disabled until the 16-bit word stored in NVM at boot-up is written to PASSKEY.

If 3 writes to PASSKEY are received that do not match the passkey without receiving a write that does match the

passkey, PASSKEY access will be locked and all future writes to PASSKEY will be treated as invalid until the

device receives a Power On Reset

To protect against unauthorized access to PASSKEY, reading PASSKEY will not respond with the passkey value

but a fixed 16-bit word response based on the state of the PASSKEY

1. 0000h - PASSKEY is Unlocked

2. 000Fh - PASSKEY is Locked and no invalid writes have been made

3. 001Fh - PASSKEY is Locked and one invalid write has been made

4. 002Fh - PASSKEY is Locked and two invalid writes have been made

5. 00FFh - PASSKEY is Locked and three or more invalid writes have been made

图7-94. (FAh) MFR_SPECIFIC_42 (PASSKEY) Register Map

15

14

13

12

11

10

9

8

RW

PASSKEY

7

6

5

4

3

2

1

0

RW

LEGEND: R/W = Read/Write; R = Read only

表7-105. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:0

PASSKEY

RW

NVM

Write: PASSKEY passkey

Read:

•

0000h - PASSKEY is Unlocked

000Fh - PASSKEY is Locked and no invalid writes have been made

001Fh - PASSKEY is Locked and one invalid write has been made

002Fh - PASSKEY is Locked and two invalid writes have been made

00FFh - PASSKEY is Locked and three or more invalid writes have been made

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7.6.89 (FBh) MFR_SPECIFIC_43 (EXT_WRITE_PROTECT)

CMD Address

Write Transaction:

Read Transaction:

Format:

FBh

Write Word

Read Word

Unsigned Binary (2 bytes)

No

Phased:

NVM Back-up:

Updates:

EEPROM

At Boot-up

EXT_WRITE_PROTECT provides the user with greater resolution to Write Protect features than the Standard

PMBus Function. Each bit in the EXT_WRITE_PROTECT provides individual and independent

WRITE_PROTECTION.

图7-95. (FBh) MFR_SPECIFIC_43 (EXT_WRITE_PROTECT) Register Map

15

14

13

12

11

10

9

8

RW

WP

RW

VOF

RW

WN

RW

ITF

RW

MAR

HWP

TRIM

VOUT

7

6

5

4

3

2

1

0

RW

OP

RW

CFG

RW

VIN

RW

SEQ

RW

DAT

RW

BOT

RW

PSK

RW

STR

LEGEND: R/W = Read/Write; R = Read only

表7-106. Register Field Descriptions

Bit

Field

Access

Reset

Description

HWP

NVM

Command List: EXT_WRITE_PROTECT (This command), PASSKEY

0b: Commands are Writable unless:

15

RW

a. EXT_WRITE_PROTECT is Write Protected by PASSKEY

b. PASSKEY is Write Protected by EXT_WRITE_PROTECT[1]

1b: Commands are Read Only (if stored to NVM, this will permanently lock

EXT_WRITE_PROTECT)

14

13

WP

RW

NVM

Command List: WRITE_PROTECT (Standard PMBus Command)

0b: Commands are Writable (No other command controls write access to

WRITE_PROTECT

1b: Commands are Read Only

TRIM

Command List: VOUT_TRIM, VOUT_SCALE_LOOP, IOUT_CAL_GAIN,

IOUT_CAL_OFFSET

0b: Commands are Writable unless Write Protected by WRITE_PROTECT

1b: Commands are Read Only

12

11

VOUT

VOF

RW

NVM

Command List: VOUT_MODE, VOUT_COMMAND

0b: Commands are Writable unless Write Protected by WRITE_PROTECT

1b: Commands are Read Only

Command List: VOUT_MAX, VOUT_OV_FAULT_LIMIT,

VOUT_OV_FAULT_RESPONSE, VOUT_UV_FAULT_LIMIT,

VOUT_UV_FAULT_RESPONSE, VOUT_MIN

0b: Commands are Writable unless Write Protected by WRITE_PROTECT

1b: Commands are Read Only

10

9

WN

ITF

RW

NVM

Command List: VOUT_OV_WARN_LIMIT, VOUT_UV_WARN_LIMIT,

IOUT_OC_WARN_LIMIT, OT_WARN_LIMIT, SMBALERT_MASK

0b: Commands are Writable unless Write Protected by WRITE_PROTECT

1b: Commands are Read Only

Command List: IOUT_OC_FAULT_LIMIT, IOUT_OC_FAULT_RESPONSE,

OT_FAULT_LIMIT, OT_FAULT_RESPONSE, SIMULATE_FAULTS

0b: Commands are Writable unless Write Protected by WRITE_PROTECT

1b: Commands are Read Only

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表7-106. Register Field Descriptions (continued)

Bit

Field

Access

Reset

Description

8

MAR

RW

NVM

Command List: VOUT_MARGIN_HIGH, VOUT_MARGIN_LOW,

VOUT_TRANSITION_RATE

0b: Commands are Writable unless Write Protected by WRITE_PROTECT

1b: Commands are Read Only

7

6

OP

RW

NVM

Command List: OPERATION

0b: Commands are Writable unless Write Protected by WRITE_PROTECT

1b: Commands are Read Only

CFG

Command List: FREQUENCY_SWITCH, INTERLEAVE,

COMPENSATION_CONFIG, TRANSIENT_REDUCTION_CONFIG,

TELEMETRY_CONFIG, POWER_STAGE_CONFIG, PGOOD_CONFIG,

SYNC_CONFIG, MISC_OPTIONS, STACK_CONFIG

0b: Commands are Writable unless Write Protected by WRITE_PROTECT

1b: Commands are Read Only

5

4

VIN

RW

NVM

Command List: VIN_UV_WARN_LIMIT, VIN_OV_FAULT_LIMIT,

VIN_OV_WARN_LIMIT, VIN_OV_FAULT_RESPONSE

0b: Commands are Writable unless Write Protected by WRITE_PROTECT

1b: Commands are Read Only

SEQ

Command List: TON_DELAY, TON_RISE, TON_MAX_FAULT_LIMIT,

TON_MAX_FAULT_RESPONSE, TOFF_DELAY, TOFF_FALL, and

ON_OFF_CONFIG, VIN_ON, VIN_OFF

0b: Commands are Writable unless Write Protected by WRITE_PROTECT

1b: Commands are Read Only

3

2

1

DAT

BOT

PSK

RW

NVM

Command List: MFR_ID, MFR_MODEL, MFE_REVISION, MFR_SERIAL

0b: Commands are Writable unless Write Protected by WRITE_PROTECT

1b: Commands are Read Only

Command List: PIN_DETECT_OVERRIDE, PMBUS_ADDRESS

0b: Command are Writable unless Read Only from WRITE_PROTECT

1b: Commands are Read Only

Command List: PASSKEY

0b: Commands are Writable unless Write Protected by WRITE_PROTECT

1b: Commands are Read Only

备注

Because PASSKEY write protects EXT_WRITE_PROTECT when

PASSKEY != 0000h, setting this bit when PASSKEY != 0000h and

storing to NVM permanently locks access to EXT_WRITE_PROTECT.

Setting this bit when PASSKEY is set to 0000h prevents the

programming of a PASSKEY value.

0

STR

RW

NVM

Command List: STORE_USER_ALL

0b @ Power On Reset: Commands are Writable unless Read Only from

WRITE_PROTECT or PASSKEY

0b @ RESTORE: Commands are Writable unless Read Only from

WRITE_PROTECT or PASSKEY

0b at All other Times: Commands are Writable unless Read Only from

WRITE_PROTECT or PASSKEY

1b @ Power On Reset: Commands are Read Only

1b @ RESTORE: Commands are Read Only

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7.6.90 (FCh) MFR_SPECIFIC_44 (FUSION_ID0)

CMD Address

Write Transaction:

Read Transaction:

Format:

FCh

Write Word (writes accepted but otherwise ignored)

Read Word

Unsigned Binary (2 bytes)

Phased:

No

NVM Back-up:

FUSION_ID0 provides a platform level Identification code to be used by Texas Instruments Digital Power

Designer for identifying a TI device.

Writes to this command will be accepted, but ignored otherwise (the readback value of this command does not

change following a write attempt). This command is writeable for some TI devices, so to maintain cross-

compatibility, the TPS546D24S accepts write transactions to this command as well. No STATUS_CML bits are

set as a result of the receipt of a write attempt to this command.

图7-96. (FCh) MFR_SPECIFIC_44 (FUSION_ID0) Register Map

15

R

14

R

13

12

11

10

9

8

R

FUSION_ID0

7

6

5

4

3

2

1

0

R

LEGEND: R/W = Read/Write; R = Read only

表7-107. Register Field Descriptions

Bit

Field

Access

Reset

Description

15:0

FUSION_

ID0

R

02C0h

Hard Coded to 02C0h

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7.6.91 (FDh) MFR_SPECIFIC_45 (FUSION_ID1)

CMD Address

Write Transaction:

Read Transaction:

Format:

FDh

Block Write (writes accepted but otherwise ignored)

Block Read

Unsigned Binary (6 bytes)

Phased:

No

NVM Back-up:

FUSION_ID1 provides a platform level Identification code to be used by Texas Instruments Digital Power

Designer for identifying a TI device.

Writes to this command will be accepted, but ignored otherwise (the readback value of this command does not

change following a write attempt). This command is writeable for some TI devices, so to maintain cross-

compatibility, the TPS546D24S accepts write transactions to this command as well. No STATUS_CML bits are

set as a result of the receipt of a write attempt to this command.

图7-97. (FDh) MFR_SPECIFIC_45 (FUSION_ID1) Register Map

47

R

46

R

45

44

43

42

41

R

40

R

FUSION_ID1

39

R

38

R

37

R

36

R

35

R

34

R

33

R

32

R

FUSION_ID1

31

30

29

28

27

26

25

24

23

R

22

R

21

R

20

R

19

R

18

R

17

R

16

R

FUSION_ID1

15

R

14

R

13

R

12

R

11

R

10

R

9

8

R

7

6

5

4

3

2

1

0

R

LEGEND: R/W = Read/Write; R = Read only

表7-108. Register Field Descriptions

Bit

Field

Access

Reset

Description

47:40

FUSION_

ID1

R

4Bh

Hard coded to 4Bh

39:32

31:24

23:16

15:8

FUSION_

ID1

R

43h

4Fh

4Ch

49h

Hard coded to 43h

Hard coded to 4Fh

Hard coded to 4Ch

Hard coded to 49h

FUSION_

ID1

FUSION_

ID1

FUSION_

ID1

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表7-108. Register Field Descriptions (continued)

Bit

Field

Access

Reset

Description

7:0

FUSION_

ID1

R

54h

Hard coded to 54h

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8 Application and Implementation

备注

以下应用部分中的信息不属于TI 器件规格的范围，TI 不担保其准确性和完整性。TI 的客户应负责确定

器件是否适用于其应用。客户应验证并测试其设计，以确保系统功能。

8.1 Application Information

The TPS546D24S is a highly integrated, synchronous step-down DC/DC converter. This device is used to

convert a higher DC-input voltage to a lower DC-output voltage, with a maximum output current of 40 A for a

single device. Use the following design procedures to select key component values for single phasethrough four-

phase designs. The appropriate behavioral options can be set through PMBus.

8.2 Typical Application

U1

R1

PVIN

C1

21

22

23

24

25

7

VIN

PVIN

BOOT

R2

10

0

8

SW

C2

100uF

C3

100uF

C4

C5

C6

C7

C8

C9

C10

C11

0.1uF

9

22uF 22uF

22uF 22uF 6800pF 6800pF 6800pF

1uF

10

11

12

L1

26

27

28

AGND

AVIN

GND

VOUT

CNTL

EN/UVLO

VDD5

300nH

VDD5

13

14

15

16

17

18

19

20

41

C12

1000pF

GND

PGND

PAD

C16

470uF

C17

470uF

C18

47uF

C13

47uF

C14

47uF

C15

47uF

AGND

C19

4.7uF

R3

NT1

1.0

Net-Tie

GND

R4

33

BP1V5

VOSNS

4

49.9

R5

BP1V5

C20

100pF

34

35

36

38

GOSNS/SLAVE

VSHARE

NC

R6

R7

R8

R9

49.9

C21

2.2uF

9.09k

78.7k

TBD

44.2k

MSEL2

VSEL

29

30

31

32

MSEL2

VSEL

MSEL2

GND

DRTN

VSEL

ADRSEL

MSEL1

ADRSEL

MSEL1

SYNC

MSEL1

39

40

BCX_CLK

BCX_DAT

R10

4.64k

R11

31.6k

R12

TBD

R13

17.8k

1

5

PG

PGD/RST

DRTN

PGD

2

3

PMB_DATA

PMB_CLK

PMB_DATA

PMB_CLK

R14

10.0k

DRTN

VDD5

6

37 AGND

SMB_ALRT

AGND

TPS546D24SRVFR

图8-1. TPS546D24S Standalone Application

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8.2.1 Design Requirements

For this design example, use the input parameters listed in 表8-1.

表8-1. Design Parameters

DESIGN PARAMETER

Input voltage

TEST CONDITIONS

MIN

TYP

12

MAX UNIT

V_IN

5

16

V

V_IN(ripple)

V_OUT

Input ripple voltage

V_IN=12 V, I_OUT= 20 A

0.3

1.0

Output voltage

Line regulation

0.5%

ΔV_O(ΔVI)

ΔV_O(ΔIO)

V_PP

5 V ≤V_IN≤16 V

0 V ≤I_OUT≤35 A

I_OUT= 35 A

Load regulation

Output ripple voltage

V_OUTdeviation during load transient

Output current

20

50

mV

A

∆V_OUT

I_OUT

∆I_OUT= 10 A, V_IN= 12 V

5 V ≤V_IN≤16 V

0

35

I_OCP

Output overcurrent protection threshold

Switching frequency

Full load efficiency

40

325

90%

3

A

F_SW

V_IN= 12 V

kHz

V_IN= 12 V, I_OUT= 35 A

η_{Full load}

t_SS

Soft-start time (T_{ON_RISE}

)

ms

8.2.2 Detailed Design Procedure

The TPS546D24S provides four pins to program critical PMBus register values without requiring PMBus

communication. Please refer to 表 7-7 for the pin-strapping options. Some equations include a variable N, which

is the number of devices stacked together. In this stand-alone device example, the value of N is equal to 1.

The TPS546x24S Compensation and Pin-Strap Resistor Calculator can also be used to aid in design

calculations and pin-strap resistor selection.

8.2.2.1 Custom Design With WEBENCH® Tools

Click here to create a custom design using the TPS546D24S device with the WEBENCH® Power Designer.

1. Start by entering the input voltage (V_IN), output voltage (V_OUT), and output current (I_OUT) requirements.

2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.

3. Compare the generated design with other possible solutions from Texas Instruments.

The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time

pricing and component availability.

In most cases, these actions are available:

• Run electrical simulations to see important waveforms and circuit performance

• Run thermal simulations to understand board thermal performance

• Export customized schematic and layout into popular CAD formats

• Print PDF reports for the design, and share the design with colleagues

Get more information about WEBENCH tools at www.ti.com/WEBENCH.

8.2.2.2 Switching Frequency

The MSEL1 pin programs USER_DATA_01 (COMPENSATION_CONFIG) and FREQUENCY_SWITCH. The

resistor divider ratio for MSEL1 selects the nominal switching frequency. In the design procedure for MSEL1,

switching frequency is configured first, compensation is chosen after output capacitance is determined.

There is a tradeoff between higher and lower switching frequencies for buck converters. Higher switching

frequencies can produce smaller solution size using lower valued inductors and smaller output capacitors

compared to a power supply that switches at a lower frequency. However, the higher switching frequency causes

extra switching losses, which decrease efficiency and impact thermal performance.

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In this design, a moderate switching frequency of 325 kHz achieves both a small solution size and a high-

efficiency operation. Use the MSEL1 pin program table to select the frequency option. See 表 7-8 for resistor

divider code selection. Resistor divider code 2 or 3 is needed to set the switching frequency to 325 kHz.

8.2.2.3 Inductor Selection

Use 方程式 9 to calculate the value of the output inductor (L). The coefficient, KIND, represents the amount of

inductor-ripple current relative to the maximum output current. The output capacitor filters the inductor-ripple

current. Therefore, selecting a high inductor-ripple current impacts the selection of the output capacitor because

the output capacitor must have a ripple-current rating equal to or greater than the inductor-ripple current.

Generally, the KIND coefficient must be kept between 0.2 and 0.3 for balanced performance. Additionally the

product of KIND and I_OUT(Max)must be kept above 2 Ato prevent the inductance from being too large. Using this

target ripple current, the required inductor size can be calculated as shown in 方程式9.

V

- V_OUT

(

)

16 V -1 V

35 A

ì0.3

1

IN Max

V_OUT

(

)

I_{OUT Max}

(

)

= 275 nH

1 V

L =

ì

=

ì

V

₎ì f_{SW Min}

)

16 V ì325 kHz

(

N

)

IN Max

(

ìKIND

(9)

Selecting a value of 0.3 for the KIND coefficient, the target inductance, L, is 275 nH. An inductance of 300 nH is

selected. Use 方程式 10, 方程式 11, and 方程式 12 to calculate the inductor-ripple current (I_RIPPLE), RMS current

(I_L(rms)), and peak current (I_L(peak)), respectively. Use these values to select an inductor with approximately the

target inductance value, and current ratings that allow normal operation with some margin.

V

_IN(Max)- V_OUT

V_OUT

ì f_SW(Min)

1 V ì (16 V -1 V)

16V ì 325 kHz ì 300 nH

I_RIPPLE

=

ì

=

= 9.62 A

V

L1

IN(Max)

(10)

2

I

≈

’

OUT Max

1

35 A

1

(

N

)

2

≈

’

2

∆

«

÷

◊

I_{L rms}

=

+

I

(

=

+

9.62 A = 35.1A

)

(

)

RIPPLE

∆

«

÷

◊

(

)

12

(11)

(12)

I_{OUT Max}

1

2

35 A

1

2

(

)

I_{L peak}

=

+

I

=

+

ì 9.62 A = 39.8 A

(

)

(

)

RIPPLE

(

)

N

Considering the required inductance, RMS current and peak current, the 300-nH inductor, SLC1480-301ML,

from Coilcraft was selected for this application.

8.2.2.4 Output Capacitor Selection

Consider the following when selecting the value of the output capacitor:

• The output-voltage deviation during load transient

• The output-voltage ripple

8.2.2.4.1 Output Voltage Deviation During Load Transient

The desired response to a load transient is the first criterion for output capacitor selection. The output capacitor

must supply the load with the required current when not immediately provided by the regulator. When the output

capacitor supplies load current, the impedance of the capacitor affects the magnitude of the voltage deviation

during the transient.

To meet the requirements for control-loop stability, the device requires the addition of compensation components

in the design of the error amplifier. While these compensation components provide for a stable control loop, they

often also reduce the speed with which the regulator can respond to load transients. The delay in the regulator

response to load changes can be two or more clock cycles before the control loop reacts to the change. During

that time, the difference (delta) between the old and the new load current must be supplied (or absorbed) by the

output capacitance. The output capacitor impedance must be designed to supply or absorb the delta current

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while maintaining the output voltage within acceptable limits. 方程式 13 and 方程式 14 show the relationship

between the transient response overshoot (V_OVER), the transient response undershoot (V_UNDER), and the

required output capacitance (C_OUT).

2

(I_TRAN

)

ì L

V_OVER

<

V_OUTì C_OUT

(13)

(14)

2

(I_TRAN

) ì L

V_UNDER

<

(V_IN- V_OUT) ì C_OUT

If

• V_IN(min)> 2 × V_OUT, use overshoot to calculate minimum output capacitance.

• V_IN(min)< 2 × V_OUT, use undershoot to calculate minimum output capacitance.

In this case, the minimum designed input voltage, V_IN(min), is greater than 2 × V_OUT, so V_OVERdictates the

minimum output capacitance. Therefore, using 方程式 15, the minimum output capacitance required to meet the

transient requirement is 600 µF.

I

²ìL

10 A ²ì300 nH

(

)

(

)

TRAN

C_{OUT Min}

=

= 600 µF

(

)

V_OUTì V_OVER

1 V ì50 mV

(15)

The bandwidth of the voltage loop must also be considered when calculating the minimum output capacitance.

The voltage loop can typically be compensated to have a bandwidth of 1/10th the f_SW. 方程式 16 calculates the

minimum output capacitance to be 979 µF.

1

C_{OUT Min}

=

= 979 µF

(

)

f_SWV_TRAN

325 kHz 50 mV

2pì

ì

2pì

ì

10

10 A

10 I_TRAN

(16)

8.2.2.4.2 Output Voltage Ripple

The output-voltage ripple is the second criterion for output capacitor selection. Use 方程式 17 to calculate the

minimum output capacitance required to meet the output-voltage ripple specification.

I_RIPPLE

9.62 A

C_OUT(Min)

=

= 185 ꢀF

8ì f_SWì V_{OUT RIPPLE}

8ì325 kHzì20 mV

(

)

(17)

In this case, the target maximum output-voltage ripple is 20 mV. Under this requirement, the minimum output

capacitance for ripple is 185 µF. This capacitance value is smaller than the output capacitance required for the

transient response, so select the output capacitance value based on the transient requirement. Considering the

variation and derating of capacitance, in this design, two 470-µF low-ESR tantalum polymer bulk capacitors and

four 47-µF ceramic capacitors were selected to meet the transient specification with sufficient margin. Therefore

the selected nominal C_OUTis equal to 1128 µF.

With the output capacitance value selected the ESR must be considered. This is an important consideration in

this example because it uses mixed output capacitor types. First use 方程式 18 to calculate the maximum

allowable impedance for the output capacitor bank at the switching frequency to meet the output voltage ripple

specification. 方程式 18 indicates the output capacitor bank impedance must be less than 2.1 mΩ. The

impedance of the ceramic capacitors is calculated with 方程式 19 and the impedance of the bulk capacitor is

calculated with 方程式 20. The result from 方程式 20 shows the impedance of the bulk capacitor at the switching

frequency is dominated by its ESR.方程式 21 calculates the total output impedance of the output capacitor bank

at the switching frequency to be 1.7 mΩwhich meets the 2.1 mΩrequirement.

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V_{OUT RIPPLE}

20 mV

9.62 A

(

I_RIPPLE

)

Z_{COUT Max _ f}

=

= 2.1 mꢀ

(

)

SW

(18)

(19)

1

Z_{CER_ f}

=

= 2.6 mꢀ

SW

2pì f_SWìC_CER2pì325 kHzì 4ì 47 ꢁF

(

)

2

≈

’

≈

∆

«

’

÷

1

10 mꢀ

1

≈

’

2

Z_{BULK _ f}= ESR_BULK

+

=

+

= 5.0 mꢀ

∆

÷

∆

«

÷

◊

SW

2pì f_SWìC_{BULK ◊}

2

2pì325 kHzì 2ì 470 ꢁF

(

)

«

◊

(20)

Z

ì Z

BULK _ f_SW

2.6 mꢀì5.0 mꢀ

2.6 mꢀ + 5.0 mꢀ

CER_ f_SW

Z_{COUT _ f}

=

= 1.7 mꢀ

SW

Z_{CER_ f}+ Z_{BULK _ f}

SW

(21)

8.2.2.5 Input Capacitor Selection

The power-stage input-decoupling capacitance (effective capacitance at the PVIN and PGND pins) must be

sufficient to supply the high switching currents demanded when the high-side MOSFET switches on, while

providing minimal input-voltage ripple as a result. This effective capacitance includes any DC-bias effects. The

voltage rating of the input capacitor must be greater than the maximum input voltage with derating. The capacitor

must also have a ripple-current rating greater than the maximum input-current ripple to the device during full

load. Use 方程式22 to estimate the input RMS current.

V

- V_OUT

I_{OUT Max}

(

)

4.5 V -1 V

IN Min

(

V_OUT

)

(

)

= 14.6 A

35 A

1

1 V

(

N

)

I

=

ì

=

ì

IN rms

(

)

V

4.5 V

IN Min

(

IN Min

(

)

(22)

The minimum input capacitance and ESR values for a given input voltage-ripple specification, V_IN(ripple), are

shown in 方程式 23 and 方程式 24. The input ripple is composed of a capacitive portion (V_RIPPLE(cap)) and a

resistive portion (V_RIPPLE(esr)).

I_{OUT Max}

35 A

1

(

)

ì V_OUT

ì1V

N

C_{IN Min}

=

= 67.3 ꢀF

(

)

V_{RIPPLE cap}ì V

₎ì f_SW0.1V ì16 V ì325 kHz

IN Max

(

)

(23)

V_{RIPPLE ESR}

0.2 V

(

)

ESR_C

=

= 5.5 mꢀ

IN Max

(

)

I_{OUT Max}

35 A

1

2

1

2

(

N

)

+

ì9.62 A

+

I_RIPPLE

(24)

The value of a ceramic capacitor varies significantly over temperature and the amount of DC bias applied to the

capacitor. The capacitance variations because of temperature can be minimized by selecting a dielectric material

that is stable over temperature. X5R and X7R ceramic dielectrics are usually selected for power-regulator

capacitors because these components have a high capacitance-to-volume ratio and are fairly stable over

temperature. The input capacitor must also be selected with consideration of the DC bias. For this example

design, a ceramic capacitor with at least a 25-V voltage rating is required to support the maximum input voltage.

For this design, allow 0.1-V input ripple for V_RIPPLE(cap)and 0.2-V input ripple for V_RIPPLE(esr). Using 方程式 23

and 方程式 24, the minimum input capacitance for this design is 67.3 µF, and the maximum ESR is 5.5 mΩ. For

this design example, four 22-μF, 25-V ceramic capacitors, three 6800-pF, 25-V ceramic capacitors, and

twoadditional 100-μF, 25-V low-ESR electrolytic capacitors in parallel were selected for the power stage with

sufficient margin. For all designs a minimum input capacitance of 10 µF is required and a maximum input ripple

of 500 mV is recommended.

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To minimize the high frequency ringing, the high frequency 6800-pF PVIN bypass capacitors must be placed

close to power stage.

8.2.2.6 AVIN, BP1V5, VDD5 Bypass Capacitor

The BP1V5 pin requires a minimum capacitance of 1 μF connected to DRTN. The VDD5 pin must have

approximately 4.7 μF of capacitance connected to PGND. The AVIN pin must have approximately 1 μF of

capacitance connected to AGND. To filter switching noise on the AVIN pin, a small value resistor of typically 10-

Ω is recommended to be placed between PVIN and AVIN. If using split rail inputs and if the AVIN pin is

connected to the VDD5 pin, a small value resistor is recommended to be placed between AVIN and VDD5.

8.2.2.7 Bootstrap Capacitor Selection

A ceramic capacitor with a value of 0.1 μF must be connected between the BOOT and SW pins for proper

operation. TI recommends using a ceramic capacitor with X5R or better grade dielectric with a voltage rating of

25 V or higher. Lower voltage rating capacitors can be used as long as the capacitance is greater than 0.08 µF

after AC and DC bias derating.

8.2.2.8 R-C Snubber

An R-C snubber must be placed between the switching node and PGND to reduce voltage spikes on the

switching node. The power rating of the resistor must be larger than the power dissipation on the resistor with

sufficient margin. To balance efficiency and voltage spike amplitude, a 1-nF capacitor and a 1-Ω resistor were

selected for this design. In this example, an 0805 resistor was selected, which is rated for 0.125 W.

8.2.2.9 Output Voltage Setting (VSEL Pin)

The output voltage can be set using the VSEL pin. The resistor divider ratio for VSEL programs the

VOUT_COMMAND range, VOUT_SCALE_LOOP divider, VOUT_MIN, and VOUT_MAX levels according to 表

7-12. Select the resistor divider code for the range of VOUT desired. For this 1-V output example, resistor divider

code 2, a single resistor to AGND or floating the VSEL pin can be used.

With the resistor divider code selected for the range of VOUT, select the resistor to AGND code with the

VOUT_COMMAND Offset and VOUT_COMMAND step from 表 7-13. To calculate the resistor to AGND code

subtract the VOUT_COMMAND offset from the target output voltage and divide by the VOUT_COMMAND step.

For this example, a single resistor to AGND was used and the result is code 10. A 31.6-kΩ resistor to AGND at

VSEL programs the desired setting.

V_OUT- VOUT _COMMAND₍_Offset

1- 0.5

0.05

)

Code =

=

= 10

VOUT _COMMAND₍_STEP

)

(25)

8.2.2.10 Compensation Selection (MSEL1 Pin)

The resistor to AGND for MSEL1 selects the (B1h) USER_DATA_01 (COMPENSATION_CONFIG) values to

program the following voltage loop and current loop gains. For options other than the EEPROM code (MSEL1

shorted to AGND or MSEL1 to AGND resistor code 0), the current and voltage loop zero and pole frequencies

are scaled with the programmed switching frequency.

Based on Current Error Integrator, calculate the mid-band current loop gain with 方程式26.

V

f_SW

4

1.7

1.7ìp

4ì5.5ì6.155ì10^-3

ramp

ILOOP_MB= GMIìRVI =

ì

ìLìpì

=

ìLì f_SW= 39.4ìLì f_SW= 39.4ì300nHì325kHz = 3.842

V_PVINCSA

(26)

Find the smaller value closest to 3.8 in 表7-9 and this is 3.

To calculate the target voltage loop gain, first use 方程式 27 through 方程式 29 to calculate the output

impedance. Use 方程式30 to calculate the target voltage loop gain.

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1

Z_{CER _ f}

=

= 26 mꢀ

BW

f_SW

325 kHz

10

2pì

ì 4ì 47 ꢁF

2pì

ìC_CER

(

)

10

.

(27)

2

≈

’

≈

∆

’

2

∆

÷

1

10 mꢀ

1

≈

’

2

Z_{BULK _ f}= ESR_BULK

+

=

+

= 7.2 mꢀ

∆

÷

∆

«

÷

◊

BW

f_SW

325 kHz

10

2

∆

«

÷

◊

∆

÷

2pì

ì 2ì 470 ꢁF

2pì

ìC_BULK

(

)

«

◊

10

(28)

Z

ì Z

26 mꢀì7.2 mꢀ

26 mꢀ + 7.2 mꢀ

CER _ f_BW

BULK _ f_BW

Z_{COUT _ f}

=

= 5.6 mꢀ

BW

Z_{CER _ f}+ Z_{BULK _ f}

BW

(29)

(30)

mV

A

6.155

1

CSA

1

VLOOP_MB= GMV ìRVV =

ì

=

ì

= 2.2

VOUT _SCALE_LOOP Nì Z_{COUT _ f}

0.5 1ì5.6 mW

BW

Find the smaller value closest to 2.2 in 表 7-9 for voltage loop gain and this is 2. This setting gives a stable

design but through bench evaluation the voltage loop gain was reduced to 1 to improve the gain and phase

margin. The calculated current and voltage loop gain correspond to compensation setting 7. To use this

compensation setting resistor to AGND code 7 is needed. With this compensation code the even resistor divider

code must be used to set the switching frequency. Divider code 2 sets the fsw to 325 kHz. Resistor to AGND

code 9 and resistor divider code 2 is selected using an MSEL1 resistor divider of R_TOP= 44.2 kΩ and R_BOT

17.8 kΩ.

=

The procedure given is meant to give a stable design. Further optimization of the compensation is often possible

through testing the design on the bench. Increasing the voltage loop gain increases the loop bandwidth to

improve the transient response but make sure to verify there is still sufficient gain and phase margin. The

maximum voltage loop bandwidth possible is limited by these stability margins. Decreasing the current loop gain

can help to minimize pulse-width jitter but this typically comes with a tradeoff of decreased phase margin. Lastly,

the pole and zero locations can also be adjusted through PMBus. For example, it can be beneficial to use the

CPV capacitor in the voltage loop to add a pole at the same frequency of the ESR zero when using high ESR

output capacitors.

When using a larger inductance, the current loop gain that can be selected through pin strapping can be much

lower than the calculated target value. If this happens, the voltage loop gain must also be scaled back by about

the same amount to keep sufficient phase margin. For higher voltage loop bandwidth, the inductance can be

decreased to reduce the current loop gain needed or higher current loop gain can be programmed through the

PMBus command USER_DATA_01 (COMPENSATION_CONFIG).

8.2.2.11 Soft Start, Overcurrent Protection, and Stacking Configuration (MSEL2 Pin)

Soft-start time, overcurrent protection thresholds, and stacking configuration can be configured using the MSEL2

pin. The TPS546D24S device support several soft-start times from 0 to 31.75 ms in 250-µs steps (7 bits)

selected by the TON_RISE command. Eight times are selectable using the MSEL2 pin. The TPS546D24S

device support several low-side overcurrent warn and fault thresholds from 8 to 62 A selected by the

IOUT_OC_WARN_LIMIT and IOUT_OC_FAULT_LIMIT commands. Four thresholds are selectable using the

MSEL2 pin. The response to an OC fault can be changed through PMBus. Lastly, the number of devices stacked

is set using the MSEL2 pin.

The resistor divider code for MSEL2 selects the soft-start values. The resistor to AGND determines the number

of devices sharing common output and the overcurrent thresholds. Use 表7-11 and 表7-10 to select the resistor

to AGND code and resistor divider code needed for the desired configuration.

In this single phase design, resistor divider code 3 is selected for 5-ms soft start and resistor to AGND code 0 is

selected for the highest current limit thresholds and stand alone configuration.

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8.2.2.12 Enable and UVLO

The ON_OFF_CONFIG command is used to select the turnon behavior of the converter. For this example, the

EN/UVLO pin or CONTROL pin was used to enable or disable the converter, regardless of the state of

OPERATION, as long as the input voltage is present and above the UVLO threshold. The EN/UVLO pin is pulled

low internally if it is floating.

A resistor divider can be added the EN/UVLO pin to program an additional UVLO. Additionally 0.1 µF can be

placed on this pin to filter noise or short glitches. Use 方程式 31 and 方程式 32 to calculate the resistor values to

target a 4.75-V turnon and a 4.25-V turnoff. Standard resistor values of 30.1 kΩ and 7.50 kΩ are selected for

this example. Use 方程式33 and 方程式34 to calculate the thresholds based on selected resistor values.

V_ONì V_ENFALL- V_OFFì V_ENRISE

NìI_ENHYSì V_ENRISE

5.25 V ì0.98 V - 4.75 V ì1.05 V

1ì5.5 µA ì1.05 V

R_ENTOP

=

= 27.3 kꢀ

(31)

(32)

(33)

R_ENTOPì V_ENFALL

30.1kWì0.98 V

R_ENBOT

=

= 7.50 kꢀ

V_OFF- V_ENFALL+NìI_ENHYSìR_ENTOP4.75 V - 0.98 V +1ì5.5 µAì30.1kW

V_ENRISEì R

+ R_ENTOP

1.05 V ì 7.50 kW + 30.1 kW

(

)

(

)

= 5.26 V

ENBOT

V_ON

=

R_ENBOT

7.50 kW

V_ENFALLì R

+ R_ENTOP

0.98 V ì 8.66 kW + 30.1 kW

(

)

(

)

-1ì5.5 µA ì30.1 kW = 4.22 V

ENBOT

V_OFF

=

-NìI_ENHYSìR_ENTOP

=

R_ENBOT

8.66 kW

(34)

8.2.2.13 ADRSEL

In this example, the ADRSEL pin is left floating. This sets the PMBus device address to the EEPROM value,

0x24h (36d) by default, and the SYNC pin to auto detect with 0 degrees phase shift. Use 表 7-14 and 表 7-15 to

select the resistor to AGND code and resistor divider code needed for the desired configuration.

If through pin-strapping, the desired address is not possible with the SYNC pin set to auto detect and

synchronization is not needed in the application, configure the SYNC pin for SYNC_OUT. The device still

regulates normally with the SYNC pin configured for SYNC_IN, however, if there is not clock input to the SYNC

pin, the device declares a SYNC fault in the STATUS_MFR_SPECIFIC command.

8.2.2.14 Pin-Strapping Resistor Selection

The following tables provide the resistor to AGND values, in ohms, in the highlighted top rows and the top

resistor (pin to BP1V5) values, in ohms, in the unhighlighted cells. Select the column associated with the desired

resistor to AGND code and the row with the desired resistor divide code in 表7-17 and 表7-18.

8.2.2.15 BCX_CLK and BCX_DAT

For a stand-alone device, the BCX_CLK and BCX_DAT pins are not used. As shown in 表 7-5, TI recommends

ground them to the thermal pad.

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8.2.3 Application Curves

100

1.002

1.001

1

PVIN = 5V

PVIN = 12V

90

80

70

60

0.999

0.998

PVIN = 5V

PVIN = 9V

PVIN = 12V

0

5

10

15

20 25

Load Current (A)

30

35

40

45

0

5

10

15

20 25

Load Current (A)

30

35

40

45

AP03

AP04

V_OUT= 1.0 V

f_SW= 325 kHz

L = 300 nH

Snubber = 1 nF + 1 Ω

R_BOOT= 0 Ω

V_VIN= 12 V

V_OUT= 1.0 V

R_DCR= 0.2 mΩ

图8-3. Load Regulation

图8-2. Efficiency vs Output Current

40

30

200

150

100

50

V_IN= 10 V / div

20

CNTL = 5 V / div

10

0

-10

-20

-30

-40

-50

-100

-150

-200

V_O= 1 V / div

Gain (dB)

Phase (°)

PGOOD = 5 V / div

1000

10000

100000

1000000

Frequency (Hz)

AP02

Time = 500 μsec / div

V_OUT= 1.0 V

V_IN= 12 V

I_OUT= 20 A

V_IN= 12 V V_OUT= 1.0 V

I_OUT= 20 A

图8-5. Start-Up from EN/UVLO

图8-4. Total-Loop Bode Plot

V_IN= 10 V / div

CNTL = 5 V / div

V_O= 1 V / div

PGOOD = 5 V / div

Time = 500 μsec / div

V_OUT= 1.0 V

Time = 50 msec / div

V_OUT= 1.0 V

V_IN= 12 V

I_OUT= 0 A

V_IN= 12 V

I_OUT= 20 A

图8-7. Shutdown from CNTL

图8-6. Shutdown from CNTL

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I_LOAD= 10 A / div

V_O= 100 mV / div

SW = 5 V / div

V_O= 100 mV / div

SW = 5 V / div

Time = 20 μsec / div

V_OUT= 1.0 V I_OUT= 15 A to 25 A, 2.5 A/µs

Time = 20 μsec / div

V_OUT= 1.0 V I_OUT= 25 A to 15 A, 2.5 A/µs

V_IN= 12 V

图8-8. Load Transient Response

图8-9. Load Transient Response

V_O= 10 mV / div

SW = 5 V / div

Time = 2 μsec / div

V_IN= 12 V

V_OUT= 1.0 V

I_OUT= 20 A

图8-10. V_OUTSteady-State Ripple

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8.3 Two-Phase Application

Use the following design procedure to select key component values for two-phase design. The appropriate

behavioral options can be set through PMBus. Refer to 节 8.2.2 for the equations used to calculate the

component values in this example. The only difference is to increase value of N to 2 because there are two

devices stacked for a two-phase design. This procedure can also be used as reference for three-phase and four-

phase designs. Again the only difference is to increase the value of N to 3 and 4 for a three-phase and four-

phase design, respectively.

WEBENCH includes support for creating two-phase designs. The SLUC686 calculator can also be used to aid in

design calculations and pin-strap resistor selection.

8.3.1 Design Requirements

For this design example, use the input parameters listed in 表8-1.

表8-2. Design Parameters

DESIGN PARAMETER

Input voltage

TEST CONDITIONS

MIN

TYP

12

MAX UNIT

V_IN

5

16

V

V_IN(ripple)

V_OUT

Input ripple voltage

V_IN=12 V, I_OUT= 40 A

0.3

0.8

Output voltage

Line regulation

0.5%

ΔV_O(ΔVI)

ΔV_O(ΔIO)

V_PP

5 V ≤V_IN≤16 V

0 V ≤I_OUT≤80 A

I_OUT= 80 A

Load regulation

Output ripple voltage

V_OUTdeviation during load transient

Output current

10

32

mV

A

∆V_OUT

I_OUT

∆I_OUT= 20 A, V_IN= 12 V

5 V ≤V_IN≤16 V

0

80

I_OCP

Output overcurrent protection threshold

Switching frequency

Full load efficiency

104

550

85%

3

A

F_SW

V_IN= 12 V

kHz

V_IN= 12 V, I_OUT= 80 A

η_{Full load}

t_SS

Soft-start time (T_{ON_RISE}

)

ms

U1

R1

PVIN

C1

21

22

23

24

25

7

PVIN

BOOT

R2

10

PVIN

0

8

9

10

11

12

SW

C2

100uF

C3

22uF

C4

22uF

C5

22uF

C6

22uF

C7

C8

C9

C10

0.1uF

SW

6800pF 6800pF 6800pF

1uF

L1

26

27

28

AGND

AVIN

150nH

CNTL

EN/UVLO

VDD5

13

14

15

16

17

18

19

20

41

C11

1000pF

GND

PGND

PAD

C12

470uF

C13

470uF

C14

47uF

C15

47uF

C16

47uF

C17

47uF

C18

47uF

C19

47uF

C20

47uF

C21

47uF

AGND

C22

4.7uF

R3

1.0

NT1

Net-Tie

GND

R4

33

VOSNS

SNS+

BP1V5

4

49.9

R5

BP1V5

C23

100pF

34

VIN

GOSNS/SLAVE

VSHARE

NC

SNS-

R6

9.09k

R7

78.7k

R8

TBD

R9

44.2k

49.9

C24

2.2uF

MSEL2

VSEL

29

30

31

32

35

C25

100uF

C26

100uF

MSEL2

VSEL

VSHARE

MSEL2

36 GND

38

DRTN

GND

VSEL

ADRSEL

MSEL1

ADRSEL

MSEL1

SYNC

MSEL1

39

40

BCX_CLK

BCX_DAT

BCX_CLK

BCX_DAT

GND

R10

4.64k

R11

14.7k

R12

TBD

R13

5.62k

SNS+

1

PG

PGD/RST

DRTN

PGD

2

3

PMB_DATA

PMB_CLK

PMB_DATA

PMB_CLK

R14

10.0k

5

DRTN

VDD5

VOUT

GND

C27

33pF

6

37 AGND

C28

47uF

C29

47uF

C30

47uF

C31

47uF

C32

47uF

C33

47uF

C34

47uF

C35

47uF

C36

47uF

C37

47uF

SMB_ALRT

AGND

TPS546D24SRVFR

SNS-

GND

U2

R15

0

PVIN

21

22

23

24

25

7

PVIN

BOOT

R16

10

C38

1uF

8

SW

C39

100uF

C40

22uF

C41

22uF

C42

22uF

C43

22uF

C44

C45

C46

C47

0.1uF

9

6800pF 6800pF 6800pF

10

11

12

L2

26

27

28

AGND_S

AVIN

150nH

CNTL

EN/UVLO

VDD5

VDD5_S

13

14

15

16

17

18

19

20

41

C48

1000pF

GND

PGND

PAD

C49

470uF

C50

470uF

C51

47uF

C52

47uF

C53

47uF

C54

47uF

C55

47uF

C56

47uF

C57

47uF

C58

47uF

AGND_S

C59

4.7uF

R17

1.0

NT2

Net-Tie

GND

33

VOSNS

BP1V5_S

4

BP1V5

R18

10.0k

34

BP1V5_S

GOSNS/SLAVE

VSHARE

NC

R19

9.09k

C60

2.2uF

MSEL2_S

29

30

31

32

35

MSEL2

VSEL

VSHARE

SYNC

36 GND

38

DRTN_S

MSEL2_S

ADRSEL

MSEL1

SYNC

39

40

BCX_CLK

BCX_DAT

BCX_CLK

BCX_DAT

R20

0

1

5

GND

PGD/RST

DRTN

2

3

PMB_DATA

PMB_CLK

DRTN_S

C61

33pF

AGND_S

GND

6

37 AGND_S

SMB_ALRT

AGND

TPS546D24SRVFR

图8-11. TPS546D24S Two-Phase Application

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8.3.2 Switching Frequency

Only the loop controller device (U1) needs a resistor divider at the MSEL1 pin to program USER_DATA_01

(COMPENSATION_CONFIG) and FREQUENCY_SWITCH. The MSEL1 pin of loop follower devices are not

used. In this design, a moderate switching frequency of 550 kHz achieves both a small solution size and a high-

efficiency operation. Use MSEL1 pin program table to select the frequency option. See 表 7-8 for resistor divider

code selection. With 550 kHz switching frequency a single resistor to AGND can be used to program

compensation settings 7 to 25. To program all 32 compensation settings possible through MSEL1, resistor

divider code 6 or 7 sets the switching frequency to 550 kHz.

8.3.3 Inductor Selection

Use 方程式 9 to calculate the value of the output inductor (L) for each phase. The current is shared between

each phase so the output current used in this calculation is divided by the number of phases.

Selecting a value of 0.3 for the KIND coefficient, the target inductance, L, is 120 nH. An inductance of 150 nH is

selected. Use 方程式 10, 方程式 11, and 方程式 12 to calculate the inductor-ripple current (I_RIPPLE), RMS current

(I_L(rms)), and peak current (I_L(peak)), respectively. The resulting values are I_RIPPLE= 9.2 A, I_L(rms)= 40.1 A and

I_L(peak)= 44.6 A. Use these values to select an inductor with approximately the target inductance value and

current ratings that allow normal operation with some margin.

Considering the required inductance, RMS current and peak current, the 150-nH inductor, SLC1480-151ML,

from Coilcraft was selected for this application.

8.3.4 Output Capacitor Selection

In this example the target output voltage deviation with a 20 A step is 40 mV. Using 方程式 16, assuming the

voltage loop is compensated to 1/10th the f_SW, the minimum output capacitance needed to meet the transient

response specification is 1810 µF.

The target maximum output-voltage ripple is 10 mV. Under this requirement, the minimum output capacitance for

ripple is 210 µF. Depending on the duty cycle and the number of phases there can also be some inductor ripple

current cancellation. This will reduce the amount of ripple current the capacitors need to absorb reducing the

output voltage ripple. This capacitance value is smaller than the output capacitance required for the transient

response, so select the output capacitance value based on the transient requirement. Considering the variation

and derating of capacitance, in this design, four 470-µF low-ESR tantalum polymer bulk capacitors and twenty-

six 47-µF ceramic capacitors were selected to meet the transient specification with sufficient margin. The

selected nominal C_OUTis equal to 3102 µF. The 470-µF capacitors selected have an ESR of 10 mΩ.

With the output capacitance value selected the ESR must be considered because this example uses mixed

output capacitor types. First use 方程式 18 to calculate the maximum allowable impedance for the output

capacitor bank at the switching frequency to meet the output voltage ripple specification. 方程式 18 indicates the

output capacitor bank impedance must be less than 1.1 mΩ. The impedance of the ceramic capacitors alone is

calculated with 方程式 19 to be 0.2 mΩ. This is much less than the calculated maximum so the ESR of tantalum

polymer capacitors does not need to be considered for the output ripple specification.

8.3.5 Input Capacitor Selection

Using 方程式22 the maximum input RMS current is 14.7 A and the input capacitors must be rated to handle this.

When calculating this, the maximum output current must be divided by the number of phases. The output current

is divided by the number of phases because the switching nodes are interleaved. Interleaving the switching node

effectively divides the amplitude of the current pulses the input capacitor by the number of phases. With the 16-V

maximum input in this example a ceramic capacitor with at least a 25-V voltage rating is required to support the

maximum input voltage.

For this design, allow 0.1-V input ripple for V_RIPPLE(cap)and 0.2-V input ripple for V_RIPPLE(esr). Using 方程式 23

and 方程式 24, the minimum input capacitance for this design is 36 µF and the maximum ESR is 4.5 mΩ

respectively. Again the maximum output current must be divided by the number of phases and the calculated

capacitance must be placed near the loop controller converter and all of the loop follower converters. Eight 22-

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μF, 25-V ceramic capacitors and six 6800-pF, 25-V ceramic capacitors in parallel were selected to bypass the

power stage with sufficient margin. Additionally four 100-μF, 25-V low-ESR electrolytic capacitors were placed

on the input to minimize deviations on the input during transients. These capacitors are distributed equally

between the phases. To minimize the high frequency ringing, the high frequency 6800-pF PVIN bypass

capacitors must be placed close to power stage.

When stacking converters the amount of input RMS current and the amount if input capacitance required can be

further reduced. The amount of ripple cancellation depends on the number of phases and the duty cycle. PCB

inductance between the phases can also reduce the effects of ripple cancellation. The calculations given in this

example ignore the effects of ripple cancellation.

8.3.6 AVIN, BP1V5, VDD5 Bypass Capacitor

See AVIN, BP1V5, VDD5 Bypass Capacitor.

8.3.7 Bootstrap Capacitor Selection

See Bootstrap Capacitor Selection.

8.3.8 R-C Snubber

See R-C Snubber.

8.3.9 Output Voltage Setting (VSEL Pin)

Only the loop controller device (U1) needs a resistor divider at the VSEL pin to program the output voltage. The

VSEL pin of loop follower devices are not used. The resistor divider code selected for this 0.8-V output example

using 表 7-12 is a single resistor to AGND. With the resistor divider code selected for the range of VOUT, select

the resistor to AGND code with the VOUT_COMMAND Offset and VOUT_COMMAND step from the 表 7-13.

With V_OUT= 0.8 V, VOUT_COMMAND_(Offset)= 0.5 V and VOUT_COMMAND_(STEP)= 0.05, the result is code 6. A

14.7-kΩresistor to AGND at VSEL programs the desired setting.

8.3.10 Compensation Selection (MSEL1 Pin)

Only the loop controller device (U1) uses the resistor to AGND for MSEL1 to program the (B1h)

USER_DATA_01 (COMPENSATION_CONFIG) values to set the following voltage loop and current loop gains.

The MSEL1 pin of loop follower devices are not used. For options other than the EEPROM code (MSEL1

shorted to AGND or MSEL1 to AGND resistor code 0) the current and voltage loop zero and pole frequencies

are scaled with the programmed switching frequency.

Calculate the mid-band current loop gain with 方程式 26. The resulting value is 3.3. Find the smaller value

closest in the look-up table 表7-9 and this is 3.

To calculate the target voltage loop gain, first use 方程式 27 through 方程式 29 to calculate the output

impedance. Use 方程式 30 to calculate the target voltage loop gain. With an estimated 85% derating, the

ceramic capacitor impedance is 2.4 mΩ. The bulk capacitor impedance is 2.9 mΩ. The total output impedance

is 1.3 mΩ. When using a stacked configuration, the CSA gain must be divided by the number of phases when

calculating the target voltage loop gain. The resulting target voltage loop gain is 4.7. Find the smaller value

closest in the look-up 表7-9 for voltage loop gain and this is 4.

These settings gives a stable design but through bench evaluation the voltage loop gain was reduced to 2 to

improve the gain and phase margin. The current loop and voltage loop gains are selected with compensation

setting 8. With (33h) FREQUENCY_SWITCH of 550 kHz, this compensation setting can be selected using a

single resistor to AGND. A 5.62-kΩresistor to AGND at MSEL1 programs the desired settings.

8.3.11 GOSNS/FLWR Pin of Loop Follower Devices

Loop follower devices must have their GOSNS/FLWR pin tied to BP1V5 through a resistor. A 10-kΩ resistor is

recommended.

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8.3.12 Soft Start, Overcurrent Protection, and Stacking Configuration (MSEL2 Pin)

The resistor divider code for MSEL2 pin of the loop controller device (U1) selects the soft-start values. The

resistor to AGND determines the number of devices sharing common output and the overcurrent thresholds. Use

the following tables, 表 7-11 and 表 7-10 to select the resistor values. In this two-phase design, the desired

settings can be selected by floating the MSEL2 pin. This selects 3-ms soft-start time, the highest current limit

thresholds and two-phase configuration.

In stackable configuration, loop follower devices use the resistor from MSEL2 to AGND to program

IOUT_OC_WARN_LIMIT,

IOUT_OC_FAULT_LIMIT,

MFR_SPECIFIC_28

(STACK_CONFIG),

and

INTERLEAVE. The loop follower receives all other pin programmed values from the loop controller over the

back-channel communication (BCX_CLK and BCX_DAT) as part of the Power On Reset function. In this two-

phase design, the desired settings can be selected by shorting the MSEL2 pin of the loop follower device to

AGND. This selects the highest current limit thresholds and programs the loop follower device to be the 180° out

of phase from the loop controller device.

8.3.13 Enable, UVLO

TI recommends connecting the EN/UVLO pins of stacked devices together. When this is done, the hysteresis

current is multiplied by the number devices stacked. This increased hysteresis current must be included in

calculations for a resistor divider to the EN/UVLO pins. See 节8.2.2.12 for more details.

8.3.14 VSHARE Pin

When using a stacked configuration, bypass the VSHARE pin of each device to AGND with a 33 pF or larger

capacitor. This capacitor is used to prevent external noise from adding to the VSHARE signal between stacked

devices.

8.3.14.1 ADRSEL Pin

Only the loop controller device (U1) needs a resistor divider at the ADRSEL pin. In this example the ADRSEL pin

is left floating. This sets the PMBus device address to the EEPROM value, 0x24h (36d) by default, and the

SYNC pin to auto detect with 0 degrees phase shift. Use the following tables, 表 7-14 and 表 7-15, to select the

resistor to AGND code and resistor divider code needed for the desired configuration.

8.3.15 SYNC Pin

The SYNC pins of stacked devices must be connected together. Loop follower devices are always configured for

SYNC_IN while the loop controller device (U1) can be configured for auto-detect, SYNC_IN or SYNC_OUT.

8.3.16 VOSNS Pin of Loop Follower Devices

The VOSNS pin of loop follower devices can be used to monitor voltages other than VOUT through the

READ_VOUT command. A resistor divider must be used to scale to voltage at VOSNS to be less than 0.75 V.

The appropriate phase must be selected using the PHASE command.

8.3.17 Unused Pins of Loop Follower Devices

Multiple pins of loop follower devices are not used and TI recommends grounding to the thermal pad. See 表7-5

for more information.

English Data Sheet: SLUSF26

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8.3.18 Two-phase Application Curves

100

90

80

70

60

50

40

0.805

0.804

0.803

0.802

0.801

0.8

0.799

0.798

0.797

0.796

0.795

V_IN= 5 V

V_IN= 12 V

V_IN= 16 V

V_IN= 5 V

V_IN= 12 V

V_IN= 16 V

0

10

20

30

Output Current (A)

40

50

60

70

80

0

10

20

30

Output Current (A)

40

50

60

70

80

V_OUT= 0.8 V

f_SW= 550 kHz

L = 150 nH

V_OUT= 0.8 V

f_SW= 550 kHz

Snubber = 1 nF + 1 Ω

R_BOOT= 0 Ω

R_DCR= 0.2 mΩ

图8-13. Load Regulation

图8-12. Efficiency vs Output Current

0.805

0.804

0.803

0.802

0.801

0.8

60

40

180

120

60

20

0

0.799

0.798

-20

-40

-60

-120

-180

0.797

I_OUT= 0 A

I_OUT= 40 A

I_OUT= 80 A

Gain

Phase

0.796

0.795

5

6

7

8

9

10 11 12 13 14 15 16

1000 2000 5000 10000

100000

1000000

Input Voltage (V)

Frequency (Hz)

V_OUT= 0.8 V

f_SW= 550 kHz

V_IN= 12 V

f_SW= 550 kHz

V_OUT= 0.8 V

I_OUT= 40 A

图8-14. Load Regulation

图8-15. Total-Loop Bode Plot

V_OUT(AC)= 10 mV/div

V_OUT(AC)= 20 mV/div

SW_U2= 5 V/div

I_OUT(STEP)= 10 A/div

SW_U1= 5 V/div

Time = 200 µs/div

Time = 1 µs/div

V_IN= 12 V

V_OUT= 0.8 V

I_OUT(DC)= 30 A

V_IN= 12 V

V_OUT= 0.8 V

I_OUT= 40 A

I_OUT(STEP)= 20 A I_OUT(SLEW)> 3 A/µs

图8-17. V_OUTSteady-State Ripple

图8-16. Load Transient Response

8.4 Four-Phase Application

PMP21814 gives an example four-phase design using the TPS546D24S.

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8.5 Power Supply Recommendations

The TPS546D24S devices are designed to operate from split input voltage supplies. AVIN is designed to operate

from 2.95 V to 18 V. AVIN must be powered to enable POR, PMBus communication, or output conversion. For

AVIN voltages less than 4 V, VDD5 must be supplied with an input voltage greater than 4 V to enable switching.

PVIN is designed to operate from 2.95 V to 16 V. PVIN must be powered to enable switching, but not for POR or

PMBus communication. The TPS546D24S can be operated from a single 4-V or higher supply voltage by

connecting AVIN to PVIN. TI recommends a 10-Ωresistor between AVIN and PVIN to reduce switching noise on

AVIN. See the recommendations in Layout.

8.6 Layout

8.6.1 Layout Guidelines

Layout is critical for good power-supply design. 图8-18 shows the recommended PCB-layout configuration. A list

of PCB layout considerations using these devices is listed as follows:

• As with any switching regulator, several power or signal paths exist that conduct fast switching voltages or

currents. Minimize the loop area formed by these paths and their bypass connections.

• Bypass the PVIN pins to PGND with a low-impedance path. Place the input bypass capacitors of the power-

stage as close as physically possible to the PVIN and PGND pins. Additionally, a high-frequency bypass

capacitor in a 0402 package on the PVIN pins can help reduce switching spikes. This capacitor can be

placed on the other side of the PCB directly underneath the device to keep a minimum loop.

• The VDD5 bypass capacitor carries a large switching current for the gate driver. Bypassing the VDD5 pin to

AGND at the thermal pad with a low-impedance path is very critical to the stable operation of the

TPS546D24S devices. Place the VDD5 high-frequency bypass capacitors as close as possible to the device

pins, with a minimum return loop back to the Thermal Pad.

• The AVIN bypass capacitor must be placed close to the AVIN pin and provide a low-impedance path to

PGND at the thermal pad. If AVIN is powered from PVIN for single supply operation, AVIN and PVIN must be

seperated with a 10-µs R-C filter to reduce PVIN switching noise on AVIN.

• The BP1V5 bypass capacitor must be placed close to the BP1V5 pin and provide a low-impedance path to

DRTN. DRTN must not be connected to any other pin or node. DRTN is internally connected to AGND and by

external connection to System Ground. Connecting DRTN to PGND or AGND can introduce a ground loop

and errant operation.

• Keep signal components local to the device, and place them as close as possible to the pins to which they

are connected. These components include the VOSNS and GOSNS series resistors and differential filter

capacitor as well as MSEL1, MSEL2, VSEL, and ADRSEL resistors. Those components can be terminated to

AGND with a minimum return loop or bypassed to the copper area of a separate low-impedance analog

ground (AGND) that is isolated from fast switching voltages and current paths and has single connection to

PGND on the thermal pad through the AGND pin. For placement recommendations, see 图8-18.

• The PGND pin (pin 26) must be directly connected to the thermal pad of the device on the PCB, with a low-

noise, low-impedance path.

• Minimize the SW copper area for best noise performance. Route sensitive traces away from the SW and

BOOT pins as these nets contain fast switching voltages and lend easily to capacitive coupling.

• Snubber component placement is critical for effective ringing reduction. These components must be on the

same layer as the TPS546D24S devices, and be kept as close as possible to the SW and PGND copper

areas.

• Route the VOSNS and GOSNS lines from the output capacitor bank at the load back to the device pins as a

tightly coupled differential pair. These traces must be kept away from switching or noisy areas which can add

differential-mode noise.

• Use caution when routing of the SYNC, VSHARE, BCX_CLK, and BCX_DAT traces for stackable

configurations. The SYNC trace carries a rail-to-rail signal and must be routed away from sensitive analog

signals, including the VSHARE, VOSNS, and GOSNS signals. The VSHARE traces must also be kept away

from fast switching voltages or currents formed by the PVIN, AVIN, SW, BOOT, and VDD5 pins.

English Data Sheet: SLUSF26

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8.6.2 Layout Example

(Not to scale)

Place PVIN bypass capacitors as close

as possible to IC, with best high frequency

capacitor closest to PVIN/PGND pins

Bypass for internal regulators, AVIN.

Use multiple vias to reduce parasitic inductance

EN Signal

Internal AGND Plane to

reduce the VDD5/BP1V5

bypass parasitics.

Keep

feedback

and pin-strap

components

localized to

the IC.

PGND

PVIN

Kelvin Connect

to

IC VOSNS and

GOSNS pins

GOSNS/FLWR

If needed,

place node

breaking

Place best

high

frequency

output

RSNS–

resistor here

capacitor

between

sense points

AGND and

PGND are only

connected

together on

Thermal Pad.

Optional

RC

Snubber

VOUT

RSNS+

CBOOT

RBOOT

AGND

VOSNS

Sense point

should be

directly at the

load

L1

Minimize SW area

for least noise. Keep

For best efficiency, use a

heavy weight copper and

place these planes on multiple

PCB layers

PMBus

Communica

tion

sensitive traces

away from SW and

BOOT on all layers

图8-18. PCB Layout Recommendation

8.6.3 Mounting and Thermal Profile Recommendation

Proper mounting technique adequately covers the exposed thermal pad with solder. Excessive heat during the

reflow process can affect electrical performance. 图 8-19 shows the recommended reflow-oven thermal profile.

Proper post-assembly cleaning is also critical to device performance. Refer to QFN and SON PCB Attachment

application report for more information.

t_P

T_P

T_L

T_S(max)

T_S(min)

t_L

r_RAMP(up)

r_RAMP(down)

t_S

t_25P

Time (s)

图8-19. Recommended Reflow-Oven Thermal Profile

25

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表8-3. Recommended Thermal Profile Parameters

PARAMETER

MIN

TYP

MAX

UNIT

RAMP UP AND RAMP DOWN

r_RAMP(up)

Average ramp-up rate, T_S(max)to T_P

Average ramp-down rate, T_Pto T_S(max)

3

6

°C/s

r_RAMP(down)

PRE-HEAT

T_S

Preheat temperature

150

60

200

180

°C

s

t_S

Preheat time, T_S(min)to T_S(max)

REFLOW

T_L

T_P

t_L

Liquidus temperature

217

°C

s

Peak temperature

260

150

40

Time maintained above liquidus temperature, T_L

Time maintained within 5°C of peak temperature, T_P

Total time from 25°C to peak temperature, T_P

60

20

t_P

s

t_25P

480

s

English Data Sheet: SLUSF26

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9 Device and Documentation Support

9.1 Device Support

9.1.1 第三方产品免责声明

TI 发布的与第三方产品或服务有关的信息，不能构成与此类产品或服务或保修的适用性有关的认可，不能构成此

类产品或服务单独或与任何TI 产品或服务一起的表示或认可。

9.1.2 Development Support

9.1.2.1 Custom Design With WEBENCH® Tools

Click here to create a custom design using the TPS546D24S device with the WEBENCH® Power Designer.

1. Start by entering the input voltage (V_IN), output voltage (V_OUT), and output current (I_OUT) requirements.

2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.

3. Compare the generated design with other possible solutions from Texas Instruments.

The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time

pricing and component availability.

In most cases, these actions are available:

• Run electrical simulations to see important waveforms and circuit performance

• Run thermal simulations to understand board thermal performance

• Export customized schematic and layout into popular CAD formats

• Print PDF reports for the design, and share the design with colleagues

Get more information about WEBENCH tools at www.ti.com/WEBENCH.

9.1.2.2 Texas Instruments Fusion Digital Power Designer

The TPS546x24x devices are supported by Texas Instruments Digital Power Designer. Fusion Digital Power

Designer is a graphical user interface (GUI) which can be used to configure and monitor the devices via PMBus

using a Texas Instruments USB-to-GPIO adapter.

Click this link to download the Texas Instruments Fusion Digital Power Designer software package.

9.2 Documentation Support

9.2.1 Related Documentation

Texas Instruments, QFN and SON PCB Attachment application report

9.3 接收文档更新通知

要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新进行注册，即可每周接收产品信息更

改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。

9.4 支持资源

TI E2E^™支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解

答或提出自己的问题可获得所需的快速设计帮助。

链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅

TI 的《使用条款》。

9.5 Trademarks

SWIFT^™and TI E2E^™are trademarks of Texas Instruments.

PMBus^®is a registered trademark of System Management Interface Forum, Inc..

WEBENCH^®is a registered trademark of Texas Instruments.

所有商标均为其各自所有者的财产。

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9.6 静电放电警告

静电放电(ESD) 会损坏这个集成电路。德州仪器(TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理

和安装程序，可能会损坏集成电路。

ESD 的损坏小至导致微小的性能降级，大至整个器件故障。精密的集成电路可能更容易受到损坏，这是因为非常细微的参

数更改都可能会导致器件与其发布的规格不相符。

9.7 术语表

TI 术语表

本术语表列出并解释了术语、首字母缩略词和定义。

English Data Sheet: SLUSF26

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10 Mechanical, Packaging, and Orderable Information

The following pages include mechanical packaging and orderable information. This information is the most

current data available for the designated devices. These data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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English Data Sheet: SLUSF26

PACKAGE OUTLINE

RVF0040A

LQFN-CLIP - 1.52 mm max height

S

C

A

L

E

2

.

0

PLASTIC QUAD FLATPACK - NO LEAD

5.1

4.9

A

B

PIN 1 INDEX AREA

7.1

6.9

C

1.52

1.32

SEATING PLANE

0.08 C

0.05

0.00

2X 3.5

(0.2) TYP

3.3 0.1

EXPOSED

THERMAL PAD

36X 0.5

13

20

12

21

41

SYMM

2X

5.3 0.1

5.5

32

1

0.3

40X

0.2

40

33

PIN 1 ID

(OPTIONAL)

0.1

C A B

SYMM

0.05

0.5

0.3

40X

4222989/B 10/2017

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.

4. Reference JEDEC registration MO-220.

www.ti.com

EXAMPLE BOARD LAYOUT

RVF0040A

LQFN-CLIP - 1.52 mm max height

PLASTIC QUAD FLATPACK - NO LEAD

(3.3)

6X (1.4)

40

33

40X (0.6)

1

32

40X (0.25)

2X

(1.12)

36X (0.5)

6X

(1.28)

(6.8)

(5.3)

41

SYMM

(R0.05) TYP

(

0.2) TYP

VIA

12

21

13

20

SYMM

(4.8)

LAND PATTERN EXAMPLE

SCALE:12X

0.07 MAX

ALL AROUND

0.07 MIN

ALL AROUND

SOLDER MASK

OPENING

METAL

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

NON SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

4222989/B 10/2017

NOTES: (continued)

5. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature

number SLUA271 (www.ti.com/lit/slua271).

www.ti.com

EXAMPLE STENCIL DESIGN

RVF0040A

LQFN-CLIP - 1.52 mm max height

PLASTIC QUAD FLATPACK - NO LEAD

SYMM

(0.815) TYP

40

33

40X (0.6)

1

41

32

40X (0.25)

(1.28)

TYP

36X (0.5)

(0.64)

TYP

SYMM

(6.8)

(R0.05) TYP

8X

(1.08)

12

21

METAL

TYP

20

13

8X (1.43)

(4.8)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

EXPOSED PAD

71% PRINTED SOLDER COVERAGE BY AREA

SCALE:18X

4222989/B 10/2017

NOTES: (continued)

6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

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邮寄地址：Texas Instruments, Post Office Box 655303, Dallas, Texas 75265


型号：	TPS546D24SRVFR
厂家：	TEXAS INSTRUMENTS
描述：	具有增强安全性的 2.95V 至 16V、可堆叠 40A 同步 SWIFT™ 降压 PMBus® 转换器 \| RVF \| 40 \| -40 to 150 转换器
文件：	总181页 (文件大小：5003K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TPS546D24SRVFR [TI]

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