TPS61085A-Q1 [TI]
符合 AEC-Q100 标准的 650kHz 和 1.2MHz、18.5V 升压直流/直流转换器;
| 型号： | TPS61085A-Q1 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 符合 AEC-Q100 标准的 650kHz 和 1.2MHz、18.5V 升压直流/直流转换器 转换器 |
| 文件： | 总29页 (文件大小：1418K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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TPS61085A-Q1
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
TPS61085A-Q1 650kHz 和 1.2MHz、18.5V 升压直流/直流转换器
1 特性
3 说明
1
•
符合面向汽车应用的 AEC-Q100 标准：
器件温度等级 2：–40°C 至 +105°C，TA
TPS61085A-Q1 器件是一款高频、高效的直流/直流升
压转换器，具有能够提供高达 18.5V 输出电压的集成
2A、0.13Ω 电源开关。650kHz 或 1.2MHz 的可选频率
使得此器件可使用小型外部电感器和电容器并提供快速
瞬态响应。利用外部补偿，可以针对应用条件优化稳压
器。连接至特定软启动引脚的电容器可最大程度地减小
启动时的浪涌电流。
–
•
•
•
•
•
•
•
2.3V 至 6V 输入电压范围
具有 2A 开关电流的 18.5V 升压转换器
650kHz 或 1.2MHz 可选开关频率
可调节软启动
热关断
欠压锁定
器件信息(1)
8 引脚 VSSOP 封装
器件型号
封装
封装尺寸（标称值）
TPS61085A-Q1
VSSOP (8)
3.00mm × 3.00mm
2 应用
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附
录。
•
汽车信息娱乐系统仪表组
–
–
–
仪表组、音响主机
无线电、导航
音频放大器
•
汽车车身电子设备
–
–
车身控制模块
网关
•
•
远程信息处理和紧急呼叫
高级驾驶辅助系统 (ADAS)
简化原理图
L
3.3 mH
D
PMEG2010AEH
V
V
S
12 V/300 mA
IN
2.3 V to 6 V
6
3
5
2
IN
SW
FB
CBY
R1
158 kΩ
1 µF
16 V
COUT
CIN
EN
10 µF
16 V
2* 10 µF
25 V
R2
18.2 kΩ
7
4
1
8
COMP
SS
FREQ
GND
RCOMP
51 kΩ
CCOMP
1.1 nF
CSS
TPS61085A-Q1
100 nF
Copyright © 2017, Texas Instruments Incorporated
1
本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。 有关适用的官方英文版本的最新信息，请访问 www.ti.com，其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SLVSE63
TPS61085A-Q1
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
www.ti.com.cn
目录
1
2
3
4
5
6
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 5
6.6 Typical Characteristics.............................................. 6
Detailed Description .............................................. 8
7.1 Overview ................................................................... 8
7.2 Functional Block Diagram ......................................... 8
7.3 Feature Description................................................... 9
7.4 Device Functional Modes.......................................... 9
8
9
Application and Implementation ........................ 10
8.1 Application Information............................................ 10
8.2 Typical Application .................................................. 10
8.3 System Examples .................................................. 16
Power Supply Recommendations...................... 19
10 Layout................................................................... 20
10.1 Layout Guidelines ................................................. 20
10.2 Layout Example .................................................... 20
11 器件和文档支持 ..................................................... 21
11.1 器件支持................................................................ 21
11.2 接收文档更新通知 ................................................. 21
11.3 社区资源................................................................ 21
11.4 商标....................................................................... 21
11.5 静电放电警告......................................................... 21
11.6 术语表 ................................................................... 21
12 机械、封装和可订购信息....................................... 21
7
4 修订历史记录
Changes from Revision A (April 2018) to Revision B
Page
•
首次将数据表公开发布到网络 ................................................................................................................................................. 1
Changes from Original (September 2017) to Revision A
Page
•
已更改 将状态更改成了“生产数据”.......................................................................................................................................... 1
2
Copyright © 2017–2019, Texas Instruments Incorporated
TPS61085A-Q1
www.ti.com.cn
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
5 Pin Configuration and Functions
DGK Package
8-Pin VSSOP
Top View
COMP
FB
1
8
7
6
5
SS
2
3
4
FREQ
IN
EN
PGND
SW
Not to scale
Pin Functions
PIN
TYPE
DESCRIPTION
NO.
1
NAME
COMP
FB
I/O
Compensation pin
Feedback pin
2
I
3
EN
I
—
Shutdown control input. Connect this pin to logic high level to enable the device.
4
PGND
SW
Power ground
Switch pin
5
I
6
IN
PWR
Input supply pin
Frequency select pin. The power switch operates at 650 kHz if FREQ is connected to GND and at 1.2 MHz
if FREQ is connected to IN.
7
8
FREQ
SS
I
O
Soft-start control pin. Connect a capacitor to this pin if soft-start required. Open = no soft start
Copyright © 2017–2019, Texas Instruments Incorporated
3
TPS61085A-Q1
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
www.ti.com.cn
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
MAX UNIT
Input voltage, IN(2)
7
7
V
V
V
Voltage on pins EN, FB, SS, FREQ, COMP
Voltage on pin SW
20
Continuous power dissipation
Lead temperature (soldering, 10 s)
Operating junction temperature
Storage temperature, Tstg
See Thermal Information
260
°C
°C
°C
–40
–65
150
150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability
(2) All voltage values are with respect to network ground terminal.
6.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), Classification Level 2 per AEC
Q100-002(1)
±2000
V(ESD)
Electrostatic discharge
Charged-device model (CDM), Classification Level C4A per
AEC Q100-011
V
±500
±200
Machine model (MM)
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions
MIN
MAX
6
UNIT
VIN
VS
TA
TJ
Input voltage
2.3
VIN + 0.5
–40
V
V
Boost output voltage
18.5
105
125
Operating free-air temperature
Operating junction temperature
°C
°C
–40
6.4 Thermal Information
TPS61085A-Q1
DGK (VSSOP)
8 PINS
189.7
THERMAL METRIC(1)
UNIT
RθJA
RθJC(top)
RθJB
ψJT
Junction-to-ambient thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
75.4
110
Junction-to-top characterization parameter
Junction-to-board characterization parameter
13.7
ψJB
108.6
(1) For more information about traditional and new thermal metrics, see the application report, Semiconductor and IC Package Thermal
Metrics.
4
Copyright © 2017–2019, Texas Instruments Incorporated
TPS61085A-Q1
www.ti.com.cn
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
6.5 Electrical Characteristics
VIN = 3.3 V, EN = IN, VS = 12 V, TA = –40°C to +105°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
VIN
Input voltage
2.3
6
100
1
V
IQ
Operating quiescent current into IN
Shutdown current into IN
Device not switching, VFB = 1.3 V
EN = GND
70
µA
µA
ISDVIN
VIN falling
2.2
2.3
UVLO
Undervoltage lockout threshold
V
VIN rising
TSD
Thermal shutdown
Temperature rising, TJ
150
14
°C
°C
TSD(HYS)
Thermal shutdown hysteresis
LOGIC SIGNALS EN, FREQ
VIH
VIL
Ilkg
High level input voltage
VIN = 2.3 V to 6 V
VIN = 2.3 V to 6 V
EN = FREQ = GND
2
V
V
Low level input voltage
Input leakage current
0.5
0.1
µA
BOOST CONVERTER
VS
Boost output voltage
VIN + 0.5
18.5
V
V
VFB
gm
IFB
Feedback regulation voltage
Transconductance error amplifier
Feedback input bias current
1.230 1.238
107
1.246
µA/V
µA
VFB = 1.238 V
0.1
0.2
0.24
2
VIN = VGS = 5 V, ISW = current limit
VIN = VGS = 3.3 V, ISW = current limit
EN = GND, VSW = 6 V
0.13
0.15
RDS(on)
N-channel MOSFET ON-resistance
Ω
Ilkg
ILIM
ISS
SW leakage current
µA
A
N-channel MOSFET current limit
Soft-start current
2
7
2.6
10
3.2
13
VSS = 1.238 V
µA
FREQ = high
0.9
480
1.2
1.5
820
MHz
kHz
%/V
%/A
fosc
Oscillator frequency
FREQ = low
650
Line regulation
Load regulation
VIN = 2.3 V to 6 V, IOUT = 10 mA
VIN = 3.3 V, IOUT = 1 mA to 400 mA
0.0002
0.11
Copyright © 2017–2019, Texas Instruments Incorporated
5
TPS61085A-Q1
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
www.ti.com.cn
6.6 Typical Characteristics
The typical characteristics are measured with the 3.3-µH inductor for high-frequency (part number-7447789003) or 6.8-µH
inductor for low frequency (part number-B82464G4) and the rectifier diode with part number SL22.
Table 1. Table of Graphs
FIGURE
vs Input voltage at high frequency (1.2 MHz)
vs Input voltage at low frequency (650 kHz)
vs Load current, VS = 12 V, VIN = 3.3 V
vs Load current, VS = 9 V, VIN = 3.3 V
vs Supply voltage
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
IOUT(max)
Maximum load current
η
Efficiency
Supply current
Frequency
vs Load current
vs Supply voltage
1.6
1.6
fS = 1.2 MHz
fS = 650 kHz
1.4
1.4
1.2
VOUT = 9 V
VOUT = 9 V
1.2
1
VOUT = 12 V
VOUT = 12 V
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
VOUT = 18.5 V
VOUT = 15 V
VOUT = 15 V
VOUT = 18.5 V
0
2.5
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
3.0
3.5
4.0 4.5
Input Voltage (V)
5.0
5.5
6.0
VIN − Input Voltage (V)
G000
G000
Figure 1. Maximum Load Current vs Input Voltage
Figure 2. Maximum Load Current vs Input Voltage
100
100
fS = 650 kHz
L = 6.8 µH
fS = 650 kHz
L = 6.8 µH
90
90
80
fS = 1.2 MHz
L = 3.3 µH
80
70
60
50
40
30
20
fS = 1.2 MHz
L = 3.3 µH
70
60
50
40
30
20
V
V
= 3.3 V
= 9 V
IN
S
V
V
= 3.3 V
= 12 V
10
0
IN
S
10
0
0.80
0.60 0.70
0
0.10 0.20
0.50
0.30 0.40
0
0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
- Load current - A
I
- Load current - A
I
OUT
OUT
Figure 4. Efficiency vs Load Current, VS = 9 V, VIN = 3.3 V
Figure 3. Efficiency vs Load Current, VS = 12 V, VIN = 3.3 V
6
Copyright © 2017–2019, Texas Instruments Incorporated
TPS61085A-Q1
www.ti.com.cn
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
2
1.8
1.6
1.4
1.2
1
1600
1400
1200
1000
FREQ = V
IN
L = 3.3 µH
Switching
= 1.2 MHz
f
S
L = 3.3 µH
800
600
400
FREQ = GND
L = 6.8 µH
0.8
Switching
= 650 kHz
f
S
L = 6.8 µH
0.6
0.4
V
V
= 3.3 V
= 12 V
IN
S
200
0
Not Switching
0.2
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
2
2.5
3
3.5
4
4.5
5
5.5
6
V
- Supply Voltage - V
I
- Load current - A
CC
OUT
Figure 5. Supply Current vs Supply Voltage
Figure 6. Frequency vs Load Current
1400
1200
FREQ = V
IN
L = 3.3 µH
1000
800
FREQ = GND
L = 6.8 µH
600
400
200
V
= 12 V / 200 mA
S
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V
- Supply Voltage - V
CC
Figure 7. Frequency vs Supply Voltage
Copyright © 2017–2019, Texas Instruments Incorporated
7
TPS61085A-Q1
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
www.ti.com.cn
7 Detailed Description
7.1 Overview
The TPS61085A-Q1 boost converter is designed for output voltages up to 18.5 V with a switch-peak current limit
of 2 A minimum. The device, which operates in a current mode scheme with quasi-constant frequency, is
externally compensated for maximum flexibility and stability. The switching frequency is selectable between
650 kHz or 1.2 MHz and the minimum input voltage is 2.3 V. To control the inrush current at start-up, a soft-start
pin is available.
The novel topology of the TPS61085A-Q1 boost converteruses adaptive OFF-time to provide superior load and
line transient responses. The device also operates over a wider range of applications than conventional
converters.
The selectable switching frequency offers the possibility to optimize the design either for the use of small sized
components (1.2 MHz) or for higher system efficiency (650 kHz). However, the frequency changes slightly
because the voltage drop across the RDS(on) has some influence on the current and voltage measurement and
thus on the ON-time (the OFF-time remains constant).
Depending on the load current, the converter operates in continuous conduction mode (CCM), discontinuous
conduction mode (DCM), or pulse skip mode to maintain the output voltage.
7.2 Functional Block Diagram
V
V
IN
S
SW
IN
EN
FREQ
SS
Current limit
and
Soft Start
tOFF Generator
Bias Vref = 1.238V
UVLO
Thermal Shutdown
tON
Gate Driver of
Power
PWM
Generator
Transistor
COMP
GM Amplifier
FB
Vref
PGND
Copyright © 2016, Texas Instruments Incorporated
8
Copyright © 2017–2019, Texas Instruments Incorporated
TPS61085A-Q1
www.ti.com.cn
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
7.3 Feature Description
7.3.1 Soft Start
The boost converter has an adjustable soft start to prevent high inrush current during start-up. To minimize the
inrush current during start-up an external capacitor connected to the soft-start pin SS is used to slowly ramp up
the internal current limit of the boost converter when charged with a constant current. When the EN pin is pulled
high, the soft-start capacitor (CSS) is immediately charged to 0.3 V. The capacitor is then charged at a constant
current of 10 µA typically until the output of the boost converter VS has reached its power good threshold (90% of
VS nominal value). During this time, the SS voltage directly controls the peak inductor current, starting with 0 A at
VSS = 0.3 V up to the full current limit at VSS ≈ 800 mV. The maximum load current is available after the soft start
is completed. The larger the capacitor the slower the ramp of the current limit and the longer the soft-start time. A
100-nF capacitor is usually sufficient for most of the applications. When the EN pin is pulled low, the soft-start
capacitor is discharged to ground.
7.3.2 Frequency Select Pin (FREQ)
The frequency select pin FREQ allows to set the switching frequency of the device to 650 kHz (FREQ = low) or
1.2 MHz (FREQ = high). Higher switching frequency improves load transient response but reduces slightly the
efficiency. The other benefits of higher switching frequency are a lower output ripple voltage and smaller inductor
size. Usually, TI recommends using 1.2-MHz switching frequency unless light-load efficiency is a major concern.
7.3.3 Undervoltage Lockout (UVLO)
To avoid misoperation of the device at low input voltages an undervoltage lockout is included that disables the
device, if the input voltage falls below 2.2 V.
7.3.4 Thermal Shutdown
A thermal shutdown is implemented to prevent damages due to excessive heat and power dissipation. Typically
the thermal shutdown threshold is at TJ = 150°C. When the thermal shutdown is triggered the device stops
switching until the temperature falls below typically TJ = 136°C. Then the device starts switching again.
7.3.5 Overvoltage Prevention
If overvoltage is detected on the FB pin (typically 3% above the nominal value of 1.238 V) the part stops
switching immediately until the voltage on this pin drops to its nominal value. This prevents overvoltage on the
output and secures the circuits connected to the output from excessive overvoltage.
7.4 Device Functional Modes
The converter operates in continuous conduction mode (CCM) as soon as the input current increases above half
the ripple current in the inductor. For lower load currents it switches into discontinuous conduction mode (DCM).
If the load is further reduced, the part starts to skip pulses to maintain the output voltage.
Copyright © 2017–2019, Texas Instruments Incorporated
9
TPS61085A-Q1
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
www.ti.com.cn
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
With the TPS61085A-Q1 device, a boost regulator with an output voltage of up to 18.5 V can be designed with
input voltage ranging from 2.3 V to 6 V. The TPS61085A-Q1 device has a peak switch current limit of 2 A
minimum. The device, which operates in a current mode scheme and uses simple external compensation
scheme for maximum flexibility and stability. Selectable switching frequency allows the regulator to be optimized
either for smaller size (1.2 MHz) or for higher system efficiency (650 KHz). A dedicated soft-start (SS) pin allows
the designer to control the inrush current at start-up.
The following section provides a step-by-step design approach for configuring the TPS61085A-Q1 as a voltage
regulating boost converter.
8.2 Typical Application
L
3.3 µH
D
PMEG2010AEH
V
V
S
12 V/600 mA max
IN
3.3 V 20ꢀ
6
3
5
2
IN
SW
FB
CBY
R1
158 kΩ
1 µF
COUT
CIN
EN
10 µF
16 V
2* 10 µF
25 V
R2
18.2 kΩ
7
4
1
8
FREQ
GND
COMP
SS
RCOMP
47 kΩ
CCOMP
CSS
TPS61085A-Q1
100nF
Copyright © 2017, Texas Instruments Incorporated
Figure 8. Typical Application, 3.3 V to 12 V (fsw = 1.2 MHz)
8.2.1 Design Requirements
Table 2 lists the design parameters for this application example.
Table 2. TPS61085A-Q1 Output Design Requirements
PARAMETER
Input voltage
VALUE
3.3 V ± 20%
12 V
Output voltage
Output current
600 mA
Switching frequency
1.2 MHz
10
Copyright © 2017–2019, Texas Instruments Incorporated
TPS61085A-Q1
www.ti.com.cn
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
8.2.2 Detailed Design Procedure
The first step in the design procedure is to verify that the maximum possible output current of the boost converter
supports the specific application requirements. A simple approach is to estimate the converter efficiency, by
taking the efficiency numbers from the provided efficiency curves or to use a worst-case assumption for the
expected efficiency, for example, 90%.
1. Duty cycle:
VIN ´h
D =1-
VS
(1)
2. Maximum output current:
DIL
æ
ö
Iout = Iswpeak
-
´ 1- D
(
)
ç
÷
ø
2
è
(2)
3. Peak switch current:
DIL
Iout
Iswpeak
=
+
2
1- D
where
VIN ´ D
fs´ L
DIL =
•
•
•
•
•
•
Iswpeak = converter switch current (minimum switch current limit = 2 A)
fs = Converter switching frequency (typically 1.2 MHz)
L = Selected inductor value
η = Estimated converter efficiency (please use the number from the efficiency plots or 90% as an estimation)
ΔIL = Inductor peak-to-peak ripple current (3)
The peak switch current is the steady-state peak switch current that the integrated switch, inductor, and external
Schottky diode must be able to handle. The calculation must be done for the minimum input voltage where the
peak switch current is the highest.
8.2.2.1 Inductor Selection
The TPS61085A-Q1 is designed to work with a wide range of inductors. The main parameter for the inductor
selection is the saturation current of the inductor which must be higher than the peak switch current as calculated
in Detailed Design Procedure with additional margin to cover for heavy load transients. An alternative, more
conservative option is to choose an inductor with a saturation current at least as high as the maximum switch
current limit of 3.2 A. The other important parameter is the inductor DC resistance. Usually, the lower the DC
resistance the higher the efficiency. It is important to note that the inductor DC resistance is not the only
parameter determining the efficiency. Especially for a boost converter where the inductor is the energy storage
element, the type and core material of the inductor influences the efficiency as well. At high switching frequencies
of 1.2-MHz inductor core losses, proximity effects and skin effects become more important. Usually, an inductor
with a larger form factor gives higher efficiency. The efficiency difference between different inductors can vary
between 2% to 10%. For the TPS61085A-Q1, inductor values between 3 µH and 6 µH are a good choice with a
switching frequency of 1.2 MHz, typically 3.3 µH. At 650 kHz, TI recommends inductors between 6 µH and 13
µH, typically 6.8 µH. Table 3 shows a few inductors. Customers must verify and validate these components for
suitability with their application before using them.
Typically, TI recommends the inductor current ripple is below 20% of the average inductor current. Calculate the
inductor value using Equation 4.
Copyright © 2017–2019, Texas Instruments Incorporated
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TPS61085A-Q1
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
www.ti.com.cn
2
æ
ç
è
ö
÷
ø
VIN
VS
VS-VIN
h
0.35
æ
ö
æ
ö
L =
×
×
ç
è
÷
ø
ç
è
÷
ø
Iout_max×f
where
•
•
•
•
•
•
L is the inductor value
VIN is input voltage
VS is boost output voltage
η is efficiency
Iout_max is the maximum output current
f is frequency
(4)
Table 3. Inductor Selection
L
(µH)
COMPONENT
CODE
SIZE
(L×W×H mm)
DCR TYP
(mΩ)
(1)
SUPPLIER
Isat (A)
1.2 MHz
CDH38D09
CDPH36D13
CDPH4D19F
CDRH6D12
7447785004
MSS7341
3.3
4.7
3.3
3.3
4.7
5
Sumida
Sumida
Sumida
Sumida
4 × 4 × 1
240
155
33
1.25
1.36
1.5
5 × 5 × 1.5
5.2 × 5.2 × 2
6.7 × 6.7 × 1.5
5.9 × 6.2 × 3.3
7.3 × 7.3 × 4.1
62
2.2
Würth Elektronik
Coilcraft
60
2.5
24
2.9
650 kHz
6.8
10
Sumida
Coilcraft
CDP14D19
LPS4414
5.2 × 5.2 × 2
4.3 × 4.3 × 1.4
6.7 × 6.7 × 1.5
5 × 5 × 2.4
50
380
95
1
1.2
6.8
10
Sumida
CDRH6D12/LD
CDR6D23
1.25
1.75
2.2
Sumida
133
51
10
Würth Elektronik
Sumida
744778910
CDRH6D26HP
7.3 × 7.3 × 3.2
7 × 7 × 2.8
6.8
52
2.9
(1) See Third-party Products Disclaimer
8.2.2.2 Rectifier Diode Selection
To achieve high efficiency, a Schottky type must be used for the rectifier diode. The reverse voltage rating must
be higher than the maximum output voltage of the converter. The averaged rectified forward current Iavg, the
Schottky diode requirement is rated for, is equal to the output current Iout
:
Iavg = Iout
(5)
Usually a Schottky diode with 2-A maximum average rectified forward current rating is sufficient for most
applications. The Schottky rectifier can be selected with lower forward current capability depending on the output
current Iout but must be able to dissipate the power. The dissipated power is the average rectified forward current
times the diode forward voltage.
PD = Iavg × Vforward
(6)
Typically the diode must be able to dissipate around 500 mW depending on the load current and forward voltage.
See Table 4 for few diode options. Customers must verify and validate these components for suitability with their
application before using them.
12
Copyright © 2017–2019, Texas Instruments Incorporated
TPS61085A-Q1
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ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
Table 4. Rectifier Diode Selection
CURRENT
RATING (Iavg)
COMPONENT
PACKAGE
TYPE
Vr
Vforward / Iavg
SUPPLIER(1)
CODE
0.425 V /
750 mA
750 mA
20 V
Fairchild Semiconductor
FYV0704S
SOT-23
1 A
1 A
1 A
20 V
20 V
20 V
0.39 V / 1 A
0.52 V / 1 A
0.5 V / 1 A
NXP
PMEG2010AEH
B120
SOD-123
SMA
Vishay Semiconductor
Vishay Semiconductor
SS12
SMA
µ-SMP
(Low Profile)
1 A
20 V
0.44 V / 1 A
Vishay Semiconductor
MSS1P2L
(1) See Third-party Products Disclaimer
8.2.2.3 Setting the Output Voltage
The output voltage is set by an external resistor divider. Typically, a minimum current of 50 µA flowing through
the feedback divider gives good accuracy and noise covering. A standard low-side resistor of 18 kΩ is typically
selected. The resistors are then calculated as:
æ
ç
è
ö
÷
ø
Vref
VS
R2 =
»18kW
R1 = R2´
-1
70mA
Vref
(7)
8.2.2.4 Compensation (COMP)
The regulator loop must be compensated by adjusting the external components connected to the COMP pin. The
COMP pin is the output of the internal transconductance error amplifier. Standard values of RCOMP = 13 kΩ and
CCOMP = 3.3 nF works for the majority of the applications.
See Table 5 for dedicated compensation networks giving an improved load transient response. Equation 8 can
be used to calculate RCOMP and CCOMP
:
SPACE
110×V ×V × COUT
Vs ×COUT
IN
S
RCOMP
=
CCOMP
=
L× IOUT
7.5× IOUT × RCOMP
(8)
Table 5. Recommended Compensation Network Values at High/Low Frequency
FREQUENCY
L
VS
VIN ±20%
5 V
RCOMP
82 kΩ
75 kΩ
51 kΩ
47 kΩ
30 kΩ
27 kΩ
43 kΩ
39 kΩ
27 kΩ
24 kΩ
15 kΩ
13 kΩ
CCOMP
1.1 nF
1.6 nF
1.1 nF
1.6 nF
1.1 nF
1.6 nF
2.2 nF
3.3 nF
2.2 nF
3.3 nF
2.2 nF
3.3 nF
15 V
3.3 V
5 V
High (1.2 MHz)
3.3 µH
12 V
9 V
3.3 V
5 V
3.3 V
5 V
15 V
12 V
9 V
3.3 V
5 V
Low (650 kHz)
6.8 µH
3.3 V
5 V
3.3 V
Copyright © 2017–2019, Texas Instruments Incorporated
13
TPS61085A-Q1
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
www.ti.com.cn
Table 5 gives conservatives RCOMP and CCOMP values for certain inductors, input and output voltages providing a
very stable system. For a faster response time, a higher RCOMP value can be used to enlarge the bandwidth, as
well as a slightly lower value of CCOMP to keep enough phase margin. These adjustments must be performed in
parallel with the load transient response monitoring of TPS61085A-Q1.
8.2.2.5 Input Capacitor Selection
For good input voltage filtering, TI recommends low-ESR ceramic capacitors. TPS61085A-Q1 has an analog
input (IN). Therefore, TI highly recommends placing a 1-uF bypass capacitor as close as possible to the IC from
IN to GND.
One 10-µF ceramic input capacitor is sufficient for most of the applications. For better input voltage, filtering this
value can be increased. Refer to Table 6 and typical applications for input capacitor recommendations.
Customers must verify and validate these components for suitability with their application before using them.
8.2.2.6 Output Capacitor Selection
For best output voltage filtering, TI recommends a low ESR output capacitor like ceramic capacitor. Two 10-µF
ceramic output capacitors (or one 22-µF) work for most of the applications. Higher capacitor values can be used
to improve the load transient response.
Pay attention to the derating of capacitor value with the DC voltage.
Table 6. Rectifier Input and Output Capacitor Selection
CAPACITOR
10 µF/1206
1 µF/0603
VOLTAGE RATING
SUPPLIER(1)
Taiyo Yuden
Taiyo Yuden
Taiyo Yuden
COMPONENT CODE
EMK212 BJ 106KG
EMK107 BJ 105KA
TMK316 BJ 106KL
CIN
IN bypass
COUT
16 V
16 V
25 V
10 µF/1206
(1) See Third-party Products Disclaimer
14
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TPS61085A-Q1
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ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
8.2.3 Application Curves
V
SW
5 V/div
V
SW
5 V/div
V
S_AC
50 mV/div
V
S_AC
50 mV/div
V
V
= 3.3 V
IN
S
= 12 V/1 mA
I
L
1 A/div
fS = 1.2 MHz
V
V
= 3.3 V
IN
I
L
200 mA/div
= 12 V/300 mA
S
fS = 1.2 MHz
200 ns/div
200 ns/div
Figure 10. PWM Switching Continuous Conduction Mode
Figure 9. PWM Switching Discontinuous Conduction Mode
C
= 20 µF
C
= 20 µF
OUT
L = 6.8 µH
V
V
= 3.3 V
= 12 V
OUT
L = 3.3 µH
V
V
= 3.3 V
= 12 V
IN
S
IN
S
R
= 24 kΩ
R
= 51 kΩ
COMP
COMP
COMP
COMP
C
= 3.3 nF
C
= 1.6 nF
V
_AC
V
_AC
S
200 mV/div
S
200 mV/div
I
= 50 mA - 200 mA
OUT
I
= 50 mA - 200 mA
OUT
I
I
OUT
100 mA/div
OUT
100 mA/div
200 µs/div
200 µs/div
Figure 11. Load Transient Response High Frequency
(1.2 MHz)
Figure 12. Load Transient Response Low Frequency
(650 kHz)
EN
5 V/div
V
V
= 3.3 V
IN
= 12 V/300 mA
S
V
S
5 V/div
C
= 100 nF
I
SS
L
1 A/div
2 ms/div
Figure 13. Soft Start
Copyright © 2017–2019, Texas Instruments Incorporated
15
TPS61085A-Q1
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
www.ti.com.cn
8.3 System Examples
Figure 14 to Figure 21 show application circuit examples using the TPS61085A-Q1 device. These circuits must
be fully validated and tested by customers before using these circuits in their designs. TI does not warrant the
accuracy or completeness of these circuits, nor does TI accept any responsibility for them.
L
6.8 µH
V
D
PMEG2010AEH
V
IN
3.3 V 20ꢀ
S
12 V/600 mA max
6
3
5
2
SW
FB
IN
CBY
R1
158 kΩ
1 µF
16 V
COUT
CIN
EN
10 µF
2* 10 µF
25 V
R2
18.2 kΩ
7
4
1
8
FREQ
GND
COMP
SS
RCOMP
24 kΩ
CCOMP
CSS
3.3 nF
TPS61085A-Q1
100 nF
Copyright © 2017, Texas Instruments Incorporated
Figure 14. Typical Application, 3.3 V to 12 V (fsw = 650 kHz)
L
3.3 µH
V
D
PMEG2010AEH
V
IN
3.3 V 20ꢀ
S
9 V/800 mA max
6
3
5
2
SW
FB
IN
CBY
R1
113 kΩ
1 µF
16 V
COUT
CIN
EN
10 µF
2* 10 µF
25 V
R2
18 kΩ
7
4
1
8
FREQ
GND
COMP
SS
RCOMP
27 kΩ
CCOMP
1.6 nF
CSS
TPS61085A-Q1
100 nF
Copyright © 2017, Texas Instruments Incorporated
Figure 15. Typical Application, 3.3 V to 9 V (fsw = 1.2 MHz)
16
Copyright © 2017–2019, Texas Instruments Incorporated
TPS61085A-Q1
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ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
System Examples (continued)
L
6.8 µH
V
D
PMEG2010AEH
V
IN
3.3 V 20ꢀ
S
9 V/800 mA max
6
5
2
SW
FB
IN
CBY
R1
113 kΩ
1 µF
16 V
COUT
3
7
4
CIN
EN
10 µF
2* 10 µF
25 V
R2
18 kΩ
1
8
FREQ
GND
COMP
SS
RCOMP
13 kΩ
CCOMP
CSS
3.3 nF
TPS61085A-Q1
100 nF
Copyright © 2017, Texas Instruments Incorporated
Figure 16. Typical Application, 3.3 V to 9 V (fsw = 650 kHz)
RISO
10 kΩ
L
6.8 µH
V
D
PMEG2010AEH
V
S
12 V/300 mA
BC857C
IN
3.3 V 20ꢀ
CBY
6
3
5
2
IN
SW
FB
CISO
1 µF/ 25 V
R1
158 kΩ
CIN
EN
COUT
10 µF
16 V
2*10 µF
25 V
7
4
1
8
FREQ
GND
COMP
SS
R2
18.2 kΩ
RCOMP
24 kΩ
CCOMP
CSS
TPS61085A-Q1
100nF
Copyright © 2017, Texas Instruments Incorporated
Figure 17. Typical Application With External Load Disconnect Switch
Copyright © 2017–2019, Texas Instruments Incorporated
17
TPS61085A-Q1
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
www.ti.com.cn
System Examples (continued)
VGH
20V/20mA
T2
BC850B
3* VS
C4
100nF/
50V
D4
T1
BC857B
D2
C6
VGL
BAT54S
BAT54S
-VS
470 nF
50V
R10
kΩ
-7 V/ 20 mA
13
D5
BAT54S
C8
C3
C2
R8
7 kΩ
C1
2*VS
100nF
50V
470 nF
25 V
C5
100nF
50V
1µF
35V
1µF/
35V
D6
BAT54S
C7
D3
BAT54S
470nF
50V
D8
D1
BZX84C7V5
BZX84C 20V
D7
BAT54S
L
3.3µH
V
V
S
9V/500mA
D
PMEG2010AEH
IN
3.3V 20%
6
5
2
VIN
SW
CBY
1µF
16V
R1
kΩ
113
COUT
3
CIN
EN
FB
COMP
SS
10µF
16V
2*10µF
25V
R2
18 kΩ
7
1
8
FREQ
RCOMP
27 kΩ
4
GND
CCOMP
1.6 nF
CSS
100 nF
TPS61085A-Q1
Copyright © 2017, Texas Instruments Incorporated
Figure 18. Typical Application 3.3 V to 9 V (fsw = 1.2 MHz) For
TFT LCD With External Charge Pumps (VGH, VGL)
L
6.8 µH
optional
CBY
1 µF/ 16 V
DZ
V
D
SL22
V
3S3P wLED
LW E67C
IN
5 V 20ꢀ
S
500 mA
BZX84C 18 V
5
2
6
3
SW
IN
COUT
CIN
EN
2* 10 µF/
25 V
10 µF/
16 V
FB
COMP
SS
RLIMIT
110 Ω
7
4
1
8
RSENSE
15 Ω
FREQ
PGND
RCOMP
24 kΩ
CCOMP
3.3 nF
TPS61085A-Q1
CSS
100 nF
Copyright © 2017, Texas Instruments Incorporated
Figure 19. Simple Application (5-V Input, fsw = 650 kHz) For
wLED Supply (3S3P) (With Optional Clamping Zener Diode)
18
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TPS61085A-Q1
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ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
System Examples (continued)
L
6.8 µH
optional
DZ
CBY
V
D
SL22
V
3S3P wLED
LW E67C
IN
5 V 20ꢀ
S
500 mA
1 µF/ 16 V
BZX84C 18 V
5
2
6
SW
IN
CIN
3
COUT
EN
10 µF/
16 V
2* 10 µF/
25 V
FB
COMP
SS
RLIMIT
110 Ω
7
4
1
8
RSENSE
15 Ω
FREQ
PGND
PWM
100 Hz to 500 Hz
RCOMP
24 kΩ
CCOMP
3.3 nF
TPS61085A-Q1
CSS
100 nF
Copyright © 2017, Texas Instruments Incorporated
Figure 20. Simple Application (3.3-V Input, fsw = 650 kHz) For
wLED Supply (3S3P) With Adjustable Brightness Control
Using a PWM Signal on the Enable Pin
(With Optional Clamping Zener Diode)
L
6.8 µH
optional
CBY
1 µF/ 16 V
V
DZ
D
SL22
V
3S3P wLED
LW E67C
IN
5 V 20ꢀ
S
500 mA
BZX84C 18 V
5
2
6
3
SW
IN
CIN
COUT
EN
10 µF/
16 V
2* 10 µF/
25 V
R1
180 kΩ
RLIMIT
110 Ω
FB
COMP
SS
7
4
1
8
RSENSE
15 Ω
FREQ
PGND
RCOMP
24 kΩ
R2
127 kΩ
CCOMP
3.3 nF
Analog Brightness Control
3.3 V ~ wLED off
TPS61085A-Q1
CSS
0 V ~ lLED = 30 mA (each string)
PWM Signal
Can be used swinging from 0 V to 3.3 V
100 nF
Copyright © 2017, Texas Instruments Incorporated
Figure 21. Simple Application (3.3-V Input, fsw = 650 kHz) For
wLED Supply (3S3P) With Adjustable Brightness Control
Using an Analog Signal on the Feedback Pin
(With Optional Clamping Zener Diode)
9 Power Supply Recommendations
The TPS61085A-Q1 is designed to operate from an input voltage supply range from 2.3 V to 6 V. The required
power supply for the TPS61085A-Q1 must have a current rating according to the output voltage and output
current of the TPS61085A-Q1.
Copyright © 2017–2019, Texas Instruments Incorporated
19
TPS61085A-Q1
ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
www.ti.com.cn
10 Layout
10.1 Layout Guidelines
For all switching power supplies, the layout is an important step in the design, especially at high peak currents
and high switching frequencies. If the layout is not carefully done, the regulator could show stability problems as
well as EMI problems.
Layout Example provides an example of layout design with the TPS61085A-Q1 device.
•
•
•
Use wide and short traces for the main current path and for the power ground tracks.
The input capacitor, output capacitor, and the inductor must be placed as close as possible to the IC.
Use a common ground node for power ground and a different one for control ground to minimize the effects
of ground noise. Connect these ground nodes at the GND terminal of the IC.
•
The most critical current path for all boost converters is from the switching FET, through the rectifier diode,
then the output capacitors, and back to ground of the switching FET. Therefore, the output capacitors and
their traces must be placed on the same board layer as the IC and as close as possible between the SW pin
and the GND terminal of the IC.
10.2 Layout Example
VIN
VOUT
TPS61085A-Q1
GND
Figure 22. TPS61085A-Q1 Layout Example
20
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TPS61085A-Q1
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ZHCSJE4B –SEPTEMBER 2017–REVISED FEBRUARY 2019
11 器件和文档支持
11.1 器件支持
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下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商“按照原样”提供。这些内容并不构成 TI 技术规范，
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TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
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Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
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11.4 商标
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损
伤。
11.6 术语表
SLYZ022 — TI 术语表。
这份术语表列出并解释术语、缩写和定义。
12 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更，恕不另行通知，且
不会对此文档进行修订。如需获取此数据表的浏览器版本，请查阅左侧的导航栏。
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Copyright © 2020 德州仪器半导体技术（上海）有限公司
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS61085ATDGKRQ1
TPS61085ATDGKTQ1
ACTIVE
ACTIVE
VSSOP
VSSOP
DGK
DGK
8
8
2000 RoHS & Green
250 RoHS & Green
NIPDAUAG
Level-3-260C-168 HR
Level-3-260C-168 HR
-40 to 125
-40 to 125
1EGV
1EGV
NIPDAUAG
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
16-May-2019
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TPS61085ATDGKRQ1 VSSOP
TPS61085ATDGKTQ1 VSSOP
DGK
DGK
8
8
2000
250
330.0
180.0
12.4
12.4
5.3
5.3
3.4
3.4
1.4
1.4
8.0
8.0
12.0
12.0
Q1
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
16-May-2019
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TPS61085ATDGKRQ1
TPS61085ATDGKTQ1
VSSOP
VSSOP
DGK
DGK
8
8
2000
250
367.0
210.0
367.0
185.0
35.0
35.0
Pack Materials-Page 2
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