TPS62684YFFT [TI]
针对小型解决方案尺寸优化的 1600mA、高效降压转换器 | YFF | 6 | -40 to 85;
| 型号： | TPS62684YFFT |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 针对小型解决方案尺寸优化的 1600mA、高效降压转换器 | YFF | 6 | -40 to 85 转换器 |
| 文件： | 总27页 (文件大小：1651K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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TPS62684
ZHCSCC2 –APRIL 2014
TPS62684 1600mA，高效降压转换器
已针对最小解决方案尺寸进行优化
1 特性
3 说明
1
•
•
•
从 3.25V 至 5.5V 的 VIN 范围
TPS62684 是一款已针对电池供电类便携式应用而进
行优化的高频同步降压直流到直流转换器，在此类应用
中，在极小的解决方案尺寸和高度内要求有高负载电
流。 TPS62684 针对高效和低输出电压纹波进行优
化，支持高达 1600mA 的负载电流，并且可使用低成
本芯片电感器和电容器。 借助于 3.25V 至 5.5V 的输
入电压范围，此器件支持由锂离子电池以及 5V 电源轨
供电的应用。
总体解决方案尺寸 < 12mm2
需要三个表面贴装外部组件（一个 0805 片式多层
陶瓷电容器 (MLCC) 电感器、两个小型陶瓷电容
器）
•
•
•
•
•
•
•
完整的 1mm 以下组件外形解决方案
展频，脉宽调制 (PWM) 频率抖动
同类产品最佳的 负载与线路瞬态
直流电压总精度为 ±2%
TPS62684 借助 PWM 展频功能以 5.5MHz 的频率运
行。 对于噪声敏感应用，这一特性提供了一个低噪声
经稳压输出，并且降低了输入上的噪声。 此器件支持
2.85V 固定输出电压，从而无需外部反馈网络。
高达 1600mA 负载电流
5.5MHz 稳频运行
采用 6 引脚 NanoFree™ 晶圆级芯片封装 (WCSP)
2 应用范围
这些特性与高电源抑制比 (PSRR) 和交流负载稳压性
能组合在一起，使得该器件适合用来替代线性稳压器以
获得更好的功率转换效率
•
•
•
平板电脑
手机、智能电话
数字电视，无线网局域网 (WLAN)，全球定位系统
(GPS) 和 Bluetooth® 应用范围
器件信息
订货编号
封装
封装尺寸
芯片级球状引脚
栅格阵列
TPS62684YFF
1.431mm x 1.135mm
(DSBGA) (6)
空格
空格
空格
最小解决方案尺寸应用
V
BAT
TPS62684
L
V
2.85 V
3.25 V .. 5.5 V
OUT =
SW
VIN
0.47 mH
C
I
FB
AVIN
EN
C
O
1.5 mF
10 mF
GND
1
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
English Data Sheet: SLVSAC5
TPS62684
ZHCSCC2 –APRIL 2014
www.ti.com.cn
效率与负载电流间的关系
100
90
80
70
60
50
40
30
20
10
0
TPS62684
VOUT = 2.85V
VIN = 3.3V
VIN = 3.6V
VIN = 4.2V
VIN = 5.0V
VIN = 5.5V
1
10
100
Current (mA)
1000 2000
G000
2
版权 © 2014, Texas Instruments Incorporated
TPS62684
www.ti.com.cn
ZHCSCC2 –APRIL 2014
目录
8.3 Feature Description................................................. 13
8.4 Device Functional Modes........................................ 14
Applications and Implementation ...................... 16
9.1 Application Information............................................ 16
9.2 Typical Application ................................................. 18
1
2
3
4
5
6
特性.......................................................................... 1
应用范围................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 3
Terminal Configuration and Functions................ 4
Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 Handling Ratings....................................................... 5
6.3 Recommended Operating Conditions....................... 5
6.4 Thermal Information ................................................. 5
6.5 Electrical Characteristics........................................... 6
6.6 Timing Requirements................................................ 6
6.7 Typical Characteristics.............................................. 7
Parameter Measurement Information ................ 11
Detailed Description ............................................ 12
8.1 Overview ................................................................. 12
8.2 Functional Block Diagram ....................................... 12
9
10 Power Supply Recommendations ..................... 19
11 Layout................................................................... 19
11.1 Layout Guidelines ................................................. 19
11.2 Layout Example .................................................... 19
11.3 Thermal, Lifetime Information and Maximum Output
Current ..................................................................... 19
12 器件和文档支持 ..................................................... 21
12.1 器件支持................................................................ 21
12.2 Trademarks........................................................... 21
12.3 Electrostatic Discharge Caution............................ 21
12.4 Glossary................................................................ 21
13 机械封装和可订购信息 .......................................... 21
7
8
4 修订历史记录
日期
修订版本
注释
2014 年 4 月
*
最初发布。
Copyright © 2014, Texas Instruments Incorporated
3
TPS62684
ZHCSCC2 –APRIL 2014
www.ti.com.cn
Device Comparison Table
PART
NUMBER
DEVICE SPECIFIC
PACKAGE MARKING
OUTPUT VOLTAGE
FEATURE
CHIP CODE
PWM Spread Spectrum
Modulation
TPS62684
2.85V
D1
Forced PWM
Active Output Discharge
5 Terminal Configuration and Functions
6-Terminal YFF
TPS62684
YFF-6
(TOP VIEW)
TPS62684
YFF-6
(BOTTOM VIEW)
VIN
EN
A2
B2
C2
A1
B1
C1
A1
A2
B2
VIN
EN
AVIN
SW
AVIN
B1
C1
SW
FB
GND
C2 GND
FB
Terminal Functions
TERMINAL
NO.
I/O
DESCRIPTION
NAME
FB
C1
A2
A1
B1
I
I
Output feedback sense input. Connect FB to the converter’s output.
Power supply input. Make sure the decoupling capacitor is connected as close as possible
between terminal VIN (A2) and GND (C2).
VIN
AVIN
SW
I
Bias supply input voltage pin. This pin must be connected to VIN (A2).
This is the switch pin of the converter and is connected to the drain of the internal Power
MOSFETs.
I/O
This is the enable pin of the device. Connecting this pin low forces the device into shutdown
mode. Pulling this pin high enables the device. This pin must not be left floating and must be
terminated. When EN is pulled low, the output capacitor is actively discharged by internal
circuitry.
EN
B2
C2
I
GND
-
Ground pin
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
MAX
6
UNIT
Voltage at VIN(2)
Voltage at FB(2)
VI
3.6
V
(2)
Voltage at SW, EN, AVIN
VIN + 0.3
890
Continuous average output current(3)
Peak output current(3)
Operating junction temperature(4)
mA
mA
°C
1600
150
TJ
-40
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) Limit the junction temperature to 105°C.
(4) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the
maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package
in the application (θJA), as given by the following equation: TA(max)= TJ(max)–(θJA X PD(max)). To achieve full lifetime, it is recommended to
operate the device with a maximum junction temperature of 105°C.
4
Copyright © 2014, Texas Instruments Incorporated
TPS62684
www.ti.com.cn
ZHCSCC2 –APRIL 2014
6.2 Handling Ratings
MIN
MAX
UNIT
Tstg
Storage temperature range
–65
150
2
°C
Human body model
Charge device model
Machine model
kV
V
(1)
ESD rating
1
100
(1) The human body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin. The machine model is a 200-pF
capacitor discharged directly into each pin.
6.3 Recommended Operating Conditions
MIN NOM
MAX UNIT
VIN
IO
Input voltage range
3.25
0
5.5
960
V
VIN < VOUT,nom + 1V
Peak output current(1)
mA
µF
VOUT,nom + 1V ≤ VIN ≤ 5.5V
0
1600
CI
L
Effective Input Capacitance(2)(3)
Effective Inductance
Effective Output Capacitance(2)
Ambient temperature(4)
0.5
0.3
1.2 µH
30 µF
CO
TA
TJ
3.0
–40
–40
5.0
+85 °C
+125 °C
Operating junction temperature(5)
(1) Operating beyond the continuous average output current of 890mA may decrease the lifetime. See the Thermal, Lifetime Information
and Maximum Output Current section.
(2) Due to the dc bias effect of ceramic capacitors, the effective capacitance is lower than the nominal value when a voltage is applied. The
capacitance is specified to allow the selection of the appropriate capacitor taking into account its dc bias effect.
(3) Larger values may be required if the source impedance can not support the transient requirements of the load.
(4) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the
maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package
in the application (θJA), as given by the following equation: TA(max)= TJ(max)–(θJA X PD(max)). To achieve full lifetime, it is recommended to
operate the device with a maximum junction temperature of 105°C.
(5) Limit the junction temperature to 105°C at 1.6A output current for a lifetime of 25k hours.
6.4 Thermal Information
TPS62684
THERMAL METRIC(1)
YFF
UNIT
6 TERMINALS
RθJA
Junction-to-ambient thermal resistance
108.9
1.0
RθJC(top)
RθJB
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
17.5
4.1
°C/W
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
ψJB
17.5
n/a
RθJC(bot)
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
Copyright © 2014, Texas Instruments Incorporated
5
TPS62684
ZHCSCC2 –APRIL 2014
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6.5 Electrical Characteristics
Minimum and maximum values are at VI = 3.25V to 5.5V, EN = VIN and TA = –40°C to 85°C; Circuit of Parameter
Measurement Information section (unless otherwise noted). Typical values are at VIN = 3.6V, EN = VIN and TA = 25°C
(unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
SUPPLY CURRENT into VIN + AVIN
IQ
Operating quiescent current
Shutdown current
IO = 0mA
5.8
0.2
mA
ISD
EN = low; not including high side MOSFET leakage
1.5
2.3
2.1
μA
V
VIN rising
VIN falling
2.1
VUVLO
Undervoltage lockout threshold
1.95
V
ENABLE
VIH
High-level input voltage
Low-level input voltage
Input leakage current
0.9
V
V
VIL
0.4
0.1
Ilkg,EN
EN connected to GND or VIN; TJ = –40°C to 85°C
0.01
μA
POWER SWITCH
RDS(on),HS High Side MOSFET on resistance
Ilkg,HS
RDS(on),LS
Ilkg,LS
VIN = 3.6V; TJ = –40°C to 125°C
VIN = 2.5V
95
155
mΩ
mΩ
μA
170
High Side MOSFET leakage current VIN = 5.5V; TJ = –40°C to 85°C
2.6
VIN = 3.6V; TJ = –40°C to 125°C
VIN = 2.5V
75
155
mΩ
mΩ
μA
Low Side MOSFET on resistance
Low Side MOSFET leakage current
100
VIN = 5.5V; TJ = –40°C to 85°C
1
Resistor in parallel to Low Side
MOSFET
250
12
kΩ
Ω
Discharge resistor for power-down
sequence
only active after a first power-up (EN = high to low
after VIN applied)
RDIS
Average High Side MOSFET current
limit
1680
2100
150
2850
mA
mA
Input current limit under short-circuit
conditions
VOUT shorted to ground
Thermal shutdown
Temperature rising
Temperature falling
140
10
°C
°C
Thermal shutdown hysteresis
OSCILLATOR
fSW
Nominal oscillator frequency
IOUT = 0mA
5.5
MHz
OUTPUT
VOUT,nom
Nominal output voltage
Output voltage accuracy
2.85
V
V
0.98×VOUT,N
1.02×VOUT,N
3.25V ≤ VIN ≤ 3.85V, 0mA ≤ IO ≤ 960 mA
3.85V ≤ VIN ≤ 5.5V, 0mA ≤ IO ≤ 1600 mA
VOUT,NOM
OM
OM
0.98×VOUT,N
1.02×VOUT,N
VOUT,NOM
V
OM
OM
Line regulation
VIN = VOUT + 0.5V (min 3.25V) to 5.5V, IO = 200 mA
IO = 0mA to 1600 mA
0.2
–0.00085
1.4
%/V
%/mA
MΩ
Load regulation
FB pin input resistance
6.6 Timing Requirements
MIN
TYP
MAX UNIT
IO = 0mA, Time from EN = high to start
switching
Start-up delay time
120
300
µs
µs
µs
tRAMP
IO = 0mA, Time from start switching until 95% of
nominal output voltage
ramp time
150
300
IO = 0mA, Time from EN = low to VO < 500mV,
Effective Output Capacitance CO_effective = 5µF
Shutdown time
6
Copyright © 2014, Texas Instruments Incorporated
TPS62684
www.ti.com.cn
ZHCSCC2 –APRIL 2014
6.7 Typical Characteristics
TABLE OF GRAPHS
FIGURE
Figure 1, Figure 2, Figure 3,
Figure 4
vs Load current
vs Input voltage
η
Efficiency
Figure 5
Figure 8, Figure 9, Figure 10,
Figure 11, Figure 12,
Load transient response
Figure 13, Figure 14
AC load transient response
Line Transient Response
DC output voltage
Figure 15
Figure 16
VOUT
fsw
vs Load current
vs Input voltage
vs Load Current
Figure 6, Figure 7
Figure 17
PWM switching frequency
PWM switching frequency
PWM operation
Figure 18
Figure 19
Spread spectrum frequency
modulation operation
Figure 20
Start-up
Figure 21, Figure 22
Figure 23
Shutdown
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
VIN = 3.3V
VIN = 3.6V
VIN = 4.2V
VIN = 5.0V
VIN = 5.5V
VIN = 3.3V
VIN = 3.6V
VIN = 4.2V
VIN = 5.0V
VIN = 5.5V
TPS62684
VOUT = 2.85V
L = DFE252012P−R47M (TOKO)
TPS62684
VOUT = 2.85V
L = MDT2012-CRR56M (TOKO)
1
10
100
Current (mA)
1000 2000
1
10
100
Current (mA)
1000 2000
G000
G000
Figure 1. Efficiency Vs Load Current
Figure 2. Efficiency Vs Load Current
Copyright © 2014, Texas Instruments Incorporated
7
TPS62684
ZHCSCC2 –APRIL 2014
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Typical Characteristics (continued)
100
100
98
96
94
92
90
88
86
84
82
80
TPS62684
VOUT = 2.85V
TPS62684
VOUT = 2.85V
90
80
70
60
50
40
30
20
VIN = 5.0V (MDT2012-CRR56)
VIN = 5.0V (DFE252012P−R47)
VIN = 5.0V (MDT2012-CRR56)
VIN = 5.0V (DFE252012P−R47)
VIN = 3.6V (MDT2012-CRR56)
VIN = 3.6V (DFE252012P−R47)
10
VIN = 3.6V (MDT2012-CRR56)
VIN = 3.6V (DFE252012P−R47)
0
1
10
100
1000 2000
100
1000
2000
Current (mA)
Current (mA)
G000
G000
Figure 3. Efficiency Vs Load Current
Figure 4. Efficiency Vs Load Current
100
2.94
TPS62684
VOUT = 2.85V
L = DFE252012P-R47
TPS62684
VOUT = 2.85 V
98
96
94
92
90
88
86
84
82
80
2.91
2.88
2.85
2.82
2.79
2.76
VIN = 3.6V
VIN = 4.2V
VIN = 5.0V
VIN = 5.5V
Load = 400mA
Load = 800mA
Load = 1600mA
3.3 3.5 3.7 3.9 4.1 4.3 4.5 4.7 4.9 5.1 5.3 5.5
Input Voltage (V)
0.1
1
10
100
1000 3000
Load Current (mA)
G000
G000
Figure 5. Efficiency Vs Input Voltage
Figure 6. Output Voltage Vs Load Current
2.94
2.91
2.88
2.85
2.82
2.79
2.76
V
= 5.0 V, VO = 2.85V
TPS62684
VIN = 5 V
VOUT = 2.85 V
I
10mA to 400mA Load Step
100ns trise/tfall
Temp −40C
Temp+25C
Temp +85C
0.1
1
10
100
1000 3000
Load Current (mA)
G000
Figure 8. Load Transient Response
Figure 7. Output Voltage Vs Load Current
8
Copyright © 2014, Texas Instruments Incorporated
TPS62684
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ZHCSCC2 –APRIL 2014
Typical Characteristics (continued)
V
= 3.6 V, VO = 2.85V
V
= 5.0 V, VO = 2.85V
I
I
10mA to 400mA Load Step
100ns trise/tfall
10mA to 800mA Load Step
100ns trise/tfall
Figure 9. Load Transient Response
Figure 10. Load Transient Response
V
= 3.6 V, VO = 2.85V
V
= 5.0 V, VO = 2.85V
I
I
10mA to 800mA Load Step
100ns trise/tfall
10mA to 1600mA Load Step
100ns trise/tfall
Figure 11. Load Transient Response
Figure 12. Load Transient Response
V
= 5.0 V, VO = 2.85V
V = 5.0 V, VO = 2.85V
I
I
400mA to 1600mA Load Step
200ns tfall
400mA to 1600mA Load Step
200ns trise
Figure 13. Load Transient Response
Figure 14. Load Transient Response
Copyright © 2014, Texas Instruments Incorporated
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ZHCSCC2 –APRIL 2014
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Typical Characteristics (continued)
V
V
= 5.0 V,
VO = 2.85V
No Load
I
= 2.85 V
O
4.75V to 5.25V Line Step
5us trise/tfall
5mA to 1600mA Load Sweep
Figure 15. AC Load Transient Response
Figure 16. Line Transient Response
6500
6500
6000
5500
5000
4500
4000
3500
3000
TPS62684
VOUT = 2.85V
TPS62684
VOUT = 2.85V
6000
5500
5000
4500
4000
3500
3000
Load = 1mA
Load = 100mA
Load = 400mA
Load = 800mA
VIN = 4.2V
VIN = 5.0V
VIN = 5.5V
3.3 3.5 3.7 3.9 4.1 4.3 4.5 4.7 4.9 5.1 5.3 5.5
Input Voltage (V)
0.1
1
10
100
1000 3000
Load Current (mA)
G000
G000
Figure 17. PWM Switching Frequency Vs Input Voltage
Figure 18. PWM Switching Frequency Vs Load Current
V
= 5.0 V,
V
V
= 5.0 V,
I
I
V
= 2.85 V
= 2.85 V
O
O
No Load
No Load
Figure 19. PWM Operation
Figure 20. Spread Spectrum Frequency Modulation
Operation
10
Copyright © 2014, Texas Instruments Incorporated
TPS62684
www.ti.com.cn
ZHCSCC2 –APRIL 2014
Typical Characteristics (continued)
V
= 5.0 V,
I
VO = 2.85V
No Load
V
= 5.0 V,
I
VO = 2.85V
Load 6 Ohm
Figure 21. Start-Up
Figure 22. Start-Up
V
= 5.0 V,
I
VO = 2.85V
No Load
Figure 23. Shutdown
7 Parameter Measurement Information
TPS62684
L
VIN
V
OUT
SW
VIN
FB
AVIN
C
I
C
O
EN
GND
List of components:
•
•
•
L = TOKO MDT2012-CRR56M (if not otherwise noted)
CI = MURATA GRM155R60J155ME80D (1.5μF, 6.3V, 0402, X5R)
CO = MURATA GRM188R60J106ME84D (10μF, 6.3V, 0603, X5R)
Copyright © 2014, Texas Instruments Incorporated
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TPS62684
ZHCSCC2 –APRIL 2014
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8 Detailed Description
8.1 Overview
8.1.1 Operation
The TPS62684 is a synchronous step-down converter typically operating at a regulated 5.5-MHz pulse width
modulation (PWM) frequency.
The converter uses a unique frequency locked ring oscillating modulator to achieve best-in-class load and line
response which allows the use of tiny inductors and small ceramic input and output capacitors. At the beginning
of each switching cycle, the N-channel high side MOSFET switch is turned on and the inductor current ramps up.
This raises the output voltage until the main comparator trips; then the control logic turns off the switch.
One key advantage of the non-linear architecture that there is no traditional feedback loop. The loop response
time to a change in VOUT is essentially instantaneous. The absence of a traditional, high-gain compensated linear
loop means that the TPS62684 is inherently stable over a range of L and CO.
8.1.2 Switching Frequency
When high or low duty cycles are encountered, the loop runs out of range and the conversion frequency falls
below 5.5MHz. The tendency is for the converter to operate more towards a "constant inductor peak current"
rather than a "constant frequency". In addition to this behavior which is observed at high duty cycles, it is also
noted at low duty cycles.
When the converter is required to operate towards the 5.5MHz nominal at extreme duty cycles, the application is
assisted by decreasing the ratio of inductance (L) to the output capacitor's equivalent series inductance (ESL).
This increases the ESL step seen at the FB pin input, decreasing the propagation delay which increases the
switching frequency.
8.2 Functional Block Diagram
EN
VIN
Undervoltage
Lockout
Bias Supply
AVIN
Soft-Start
Bandgap
V
= 0.8 V
REF
Control Logic
Average Current
Limit Detect
Thermal
Shutdown
Frequency
Control
SSFM
R
1
FB
-
Gate Driver
SW
Anti
Shoot-Through
R
V
2
REF
+
GND
12
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8.3 Feature Description
8.3.1 Spread Spectrum, PWM Frequency Dithering
The goal is to spread out the emitted RF energy over a larger frequency range, so that the resulting EMI is
similar to white noise. The end result is a spectrum that is continuous and lower in peak amplitude, making it
easier to comply with electromagnetic interference (EMI) standards and with power supply ripple requirements in
cellular and non-cellular wireless applications. Radio receivers are typically susceptible to narrowband noise that
is focused on specific frequencies.
Switching regulators can be particularly troublesome in applications where electromagnetic interference (EMI) is
a concern. Switching regulators operate on a cycle-by-cycle basis to transfer power to their output. In most
cases, the frequency of operation is either fixed or regulated, based on the output load. This method of
conversion creates large components of noise at the frequency of operation (fundamental) and multiples of the
operating frequency (harmonics).
The spread spectrum architecture varies the switching frequency by around ±10% of the nominal switching
frequency, thereby significantly reducing the peak radiated and conducted noise on both the input and output
supplies. The frequency dithering scheme is modulated with a triangle profile and a modulation frequency fm.
0 dBV
F
Dfc
ENV,PEAK
Dfc
Non-modulated harmonic
F
1
Side-band harmonics
window after modulation
0 dBVref
B = 2×fm ×(1+ mf )= 2×(Dfc + fm )
Bh = 2×fm ×(1+ mf ×h)
B = 2×fm ×(1+ mf )= 2×(Dfc + fm )
Figure 24. Spectrum Of A Frequency Modulated
Sin. Wave With Sinusoidal Variation In Time
Figure 25. Spread Bands Of Harmonics In
(1)
Modulated Square Signals
The above figures show that after modulation the side-band harmonic is attenuated compared to the non-
modulated harmonic, and the harmonic energy is spread into a certain frequency band. The higher the
modulation index (mf), the larger the attenuation.
δ ´ ƒc
mƒ
=
ƒm
(1)
where:
fc is the carrier frequency (5.5MHz)
fm is the modulating frequency (approx. 0.008*fc)
δ is the modulation ratio (approx 0.1)
Dƒc
d =
ƒc
(2)
The maximum switching frequency fc is limited by the device and finally the parameter modulation ratio (δ),
together with fm , which is the side-band harmonic´s bandwidth around the carrier frequency fc . The bandwidth of
a frequency modulated waveform is approximately given by Carson’s rule and is summarized as:
B = 2 ´ ¦m ´ 1 + m = 2 ´ D¦ + ¦m
(
)
(
)
¦
c
(3)
13
(1) Spectrum illustrations and formulae (Figure 24 and Figure 25) copyright IEEE TRANSACTIONS ON ELECTROMAGNETIC
COMPATIBILITY, VOL. 47, NO.3, AUGUST 2005. See References Section for full citation.
Copyright © 2014, Texas Instruments Incorporated
TPS62684
ZHCSCC2 –APRIL 2014
www.ti.com.cn
Feature Description (continued)
fm < RBW (resolution bandwidth): The receiver is not able to distinguish individual side-band harmonics, so,
several harmonics are added in the input filter and the measured value is higher than expected in theoretical
calculations.
fm > RBW: The receiver is able to properly measure each individual side-band harmonic separately, so the
measurements match with the theoretical calculations.
8.4 Device Functional Modes
8.4.1 Enable
The TPS62684 device starts operation when EN is set high. For proper operation, the EN pin must be terminated
and must not be left floating. The device should only be enabled when the input voltage is stable and has
ramped above its minimum supply of 3.25V.
Pulling the EN pin low forces the device into shutdown, with a shutdown current of typically 0.2μA. In this mode,
the internal high side and low side MOSFETs are turned off, the internal resistor feedback divider is
disconnected, and the entire internal-control circuitry is switched off. The TPS62684 device actively discharges
the output capacitor when it turns off. The integrated discharge resistor has a typical resistance of 12Ω. This
internal discharge transistor is only turned on after the device had been enabled at least once. The required time
to discharge the output capacitor at the output node depends on load current and the effective output
capacitance. The TPS62684 is designed such that it can start into a pre-biased output, in case the output
discharge circuit was active for too short a time to fully discharge the output capacitor. In this case, the converter
starts switching as soon as the internal reference has approximately reached the equivalent voltage to the output
voltage present. It then ramps the output from that voltage level to its target value.
8.4.2 Soft Start
The TPS62684 has an internal soft start circuit that controls the ramp up of the output voltage. Once the
converter is enabled and the input voltage is above the undervoltage lockout threshold VUVLO, the output voltage
ramps up to 95% of its nominal value within tRamp of typ. 150μs. This ensures a controlled ramp up of the output
voltage and limits the input voltage drop when a battery or a high-impedance power source is connected to the
input of the DC/DC converter.
The inrush current during start-up is directly related to the effective capacitance and load present at the output of
the converter.
During soft start, the current limit is reduced to 2/3 of its nominal value. Once the internal reference voltage has
reached 90% of its target value, the current limit is set to its nominal target value.
8.4.3 Undervoltage Lockout
The undervoltage lockout circuit prevents the device from misoperation at low input voltages. It prevents the
converter from turning on either MOSFET under undefined conditions. The TPS62684 has a rising UVLO
threshold of 2.1V (typical).
8.4.4 Short-Circuit Protection
The TPS62684 integrates current limit circuitry to protect the device against heavy load or short circuits. When
the average current in the high side MOSFET reaches its current limit, the high side MOSFET is turned off and
the low side MOSFET is turned on ramping down the inductor current.
As soon as the converter detects a short circuit condition it shuts down. After a delay of approximately 20 µs, the
converter restarts. In case the short circuit condition remains, the converter shuts down again after hitting the
current limit threshold. In case the short circuit condition remains present on the converters output, the converter
periodically re-starts with a small duty cycle as the output voltage is zero and shuts down again, thereby limiting
the current drawn from the input.
14
Copyright © 2014, Texas Instruments Incorporated
TPS62684
www.ti.com.cn
ZHCSCC2 –APRIL 2014
Device Functional Modes (continued)
8.4.5 Thermal Shutdown
As soon as the junction temperature, TJ, exceeds typically 140°C, the device goes into thermal shutdown. In this
mode, the power stage is turned off. The device continues its operation when the junction temperature falls
below typically 130°C.
Copyright © 2014, Texas Instruments Incorporated
15
TPS62684
ZHCSCC2 –APRIL 2014
www.ti.com.cn
9 Applications and Implementation
9.1 Application Information
9.1.1 Inductor Selection
The TPS62684 series of step-down converters have been optimized to operate with an effective inductance
value in the range of 0.3μH to 1.2μH and with output capacitors in the range of 3μF up to 30μF effective
capacitance. The internal compensation is optimized to operate with an output filter of Lnominal = 0.47μH or
0.56μH and CO_effective = 5μF. Larger or smaller inductor values can be used to optimize the performance of the
device for specific operation conditions. For more details, see the CHECKING LOOP STABILITY section.
The inductor value affects its peak-to-peak ripple current, the output voltage ripple and the efficiency. The
selected inductor has to be rated for its dc resistance and saturation current. The inductor ripple current (ΔIL)
decreases with higher inductance and increases with higher VIN or VOUT
.
with: fSW = switching frequency (5.5 MHz typical)
L = inductor value
ΔIL = peak-to-peak inductor ripple current
IL(MAX) = maximum inductor current
(4)
In high-frequency converter applications, the efficiency is primarily affected by the inductor AC resistance (i.e.
quality factor) and to a smaller extent by the inductor DCR value. To achieve high efficiency operation, care
should be taken in selecting inductors featuring a quality factor above 25 at the switching frequency. Increasing
the inductor value produces lower RMS currents, but degrades transient response. For a given physical inductor
size, increased inductance usually results in an inductor with lower saturation current.
The total inductor losses consist of both the losses in the DC resistance (DCR) and the following frequency-
dependent components:
•
•
•
•
The losses in the core material (magnetic hysteresis loss, especially at high switching frequencies)
Additional losses in the conductor from the skin effect (current displacement at high frequencies)
Magnetic field losses of the neighboring windings (proximity effect)
Radiation losses
For smallest solution size a 0805 size (2mm x 1.2mm) chip inductor can be used. Please note that the DC
resistance of the inductor is directly related to its volume (LxWxH). Therefore designing for smallest solution size
negatively impacts the overall efficiency at heavy load currents.
The following inductor series from different suppliers have been used with the TPS62684 converter.
Table 1. List Of Inductors(1)
MANUFACTURER
SERIES
DIMENSIONS (in mm)
2.0 x 1.2 x 1.0 max. height
2.5 x 2.0 x 1.2 max. height
2.0 x 1.2 x 1.0 max. height
2.0 x 1.6 x 1.0 max. height
TOKO
MDT2012-CRR56N
DFE252012P-R47(2)
LQM21PNR47MGO
LQM2MPNR47MGH
MURATA
(1) See Third-Party Products Disclaimer
(2) Planned to be available in mass production by Q2/2014. Contact manufacturer for details.
16
Copyright © 2014, Texas Instruments Incorporated
TPS62684
www.ti.com.cn
ZHCSCC2 –APRIL 2014
9.1.2 Output Capacitor Selection
The advanced fast-response voltage mode control scheme of the TPS62684 allows the use of tiny ceramic
capacitors. Ceramic capacitors with low ESR values have the lowest output voltage ripple and are
recommended. For best performance, the device should be operated with a minimum effective output
capacitance of 5μF. A total effective output capacitance between 3μF and 30μF is required. The output capacitor
requires either an X7R or X5R dielectric. Y5V and Z5U dielectric capacitors, aside from their wide variation in
capacitance over temperature, become resistive at high frequencies.
The device operates in PWM mode and the overall output voltage ripple is the sum of the voltage step caused by
the output capacitor ESL and the ripple current flowing through the output capacitor impedance.
9.1.3 Output Filter Design
The inductor and the output capacitor build the output filter. As recommended in the output capacitor and
inductor sections, these components should be in the range:
•
•
CO = 3µF to 30µF (total effective capacitance)
L = 0.3 µH to 1.2 µH (effective inductance)
For best transient performance, the internal control stage is optimized for a LCO product of 0.5µH x 10µF
(nominal values).
9.1.4 Input Capacitor Selection
Because the nature of the buck converter has a pulsating input current, a low ESR input capacitor is required to
prevent large voltage transients that cause misbehavior of the device or interferences with other circuits in the
system. For most applications, a 1.5-μF nominal capacitor (≥ 0.5μF effective capacitance) with a X5R or X7R
dielectric is sufficient. If the application exhibits a noisy or erratic switching frequency, the remedy is likely found
by increasing the value of the input capacitor.
Take care when using only ceramic input capacitors. When a ceramic capacitor is used at the input and the
power is being supplied through long wires, such as from a wall adapter, a load step at the output can induce
ringing at the VIN pin. This ringing can couple to the output and be mistaken as loop instability or could even
damage the part. Additional "bulk" capacitance (electrolytic or tantalum) should in this circumstance be placed
between CI and the power source lead to reduce ringing than occurs between the inductance of the power
source leads and CI.
9.1.5 Checking Loop Stability
The first step of circuit and stability evaluation is to look, from a steady-state perspective, at the following signals:
•
•
•
Switching node, SW
Inductor current, IL
Output ripple voltage, VOUT(AC)
These are the basic signals that need to be measured when evaluating a switching converter. When the
switching waveform shows large duty cycle jitter or the output voltage or inductor current shows oscillations, the
regulation loop may be unstable. This is typically caused by board layout and/or LCO combination.
As a next step in the evaluation of the regulation loop, the load transient response is tested. The time between
the application of the load transient and the turn on of the high side MOSFET, the output capacitor supplies all of
the current required by the load. VOUT immediately shifts by an amount equal to ΔI(LOAD) x ESR, where ESR is
the effective series resistance of CO. ΔI(LOAD) begins to charge or discharge CO generating a feedback error
signal used by the regulator to return VOUT to its steady-state value.
During this recovery time, VOUT can be monitored for settling time, overshoot or ringing that helps judge the
converter’s stability. Without any ringing, the loop usually has more than 45° of phase margin.
Because the damping factor of the circuitry is directly related to several resistive parameters (e.g., MOSFET
RDS(on)) that are temperature dependent, the loop stability analysis should be done over the input voltage range,
load current range, and temperature range.
Copyright © 2014, Texas Instruments Incorporated
17
TPS62684
ZHCSCC2 –APRIL 2014
www.ti.com.cn
9.2 Typical Application
V
2.85 V
OUT =
@ up to 1600mA peak
TPS62684
L
V
5.0V
BAT =
SW
VIN
0.47 mH
C
FB
AVIN
EN
I
C
O
1.5 mF
10 mF
GND
Figure 26. Typical Application Circuit
9.2.1 Design Requirements
Figure 26 shows the schematic of the typical application. The TPS62684 allows the design of a power supply
with small solution size. In order to properly dissipate the heat, wide copper traces for the power connections
should be used to distribute the heat across the PCB. If possible, a GND plane should be used as it provides a
low impedance connection as well as serves as a heat sink. The EN pin should be set high after the supply
voltage has ramped to at least the minimum input voltage level of 3.25V.
9.2.2 Detailed Design Procedure
The TPS62684 allows the design of a complete power supply with only 3 small external components. A X5R or
X7R ceramic input capacitor close to the VIN pin and GND pin with a nominal value of 1.5uF or higher is
required. The input capacitance can be increased in case the source impedance is large or if there are high load
transients expected at the output. The inductor should be placed close to the SW node with a saturation current
above the current limit. A X5R or X7R ceramic output capacitor should be placed close to the inductor terminal
and GND. A low impedance GND connection on the output capacitor is required. The feedback (FB) pin should
be routed to the terminal of the output capacitor. The dc bias effect of the input and output capacitors must be
taken into account and the total capacitance on the output must not exceed the value given in the recommended
operating conditions.
9.2.3 Application Curves
V
= 5.0 V, VO = 2.85V
VO = 2.85V
No Load
I
4.5V to 5.5V Line Step
5us trise/tfall
400mA to 1600mA Load Step
100ns trise/tfall
Figure 27. Load Transient Response
Figure 28. Line Transient Response
18
Copyright © 2014, Texas Instruments Incorporated
TPS62684
www.ti.com.cn
ZHCSCC2 –APRIL 2014
10 Power Supply Recommendations
The input voltage range is from 3.25V to 5.5V. The input power supply and the input capacitor(s) should be
located as close to the device as possible to minimize the impedance of the power-supply line.
11 Layout
11.1 Layout Guidelines
As for all switching power supplies, the layout is an important step in the design. High-speed operation of the
TPS62684 demands careful attention to PCB layout. Care must be taken in board layout to get the specified
performance. If the layout is not carefully done, the regulator could show poor line and/or load regulation, stability
and switching frequency issues as well as EMI problems. It is critical to provide a low inductance, low impedance
ground path. Therefore, use wide and short traces for the main current paths.
The input capacitor as well as the inductor and output capacitor should be placed as close as possible to the IC
pins. The feedback line should be routed away from noisy components and traces (e.g. SW line).
Figure 29 shows the recommended layout using a 0805 (2.0 mm x 1.2 mm) chip inductor, a 0402 input capacitor
and a 0603 output capacitor. Total solution size is 12mm².
11.2 Layout Example
AVIN
VIN
CI
L
ENABLE
CO
GND
VOUT
Figure 29. Suggested Layout (Top)
11.3 Thermal, Lifetime Information and Maximum Output Current
Implementation of integrated circuits in wafer chipscale packages requires special attention to power dissipation.
Many system-dependent issues such as thermal coupling, airflow, added heat sinks, and convection surfaces,
and the presence of other heat-generating components, affect the power-dissipation limits of a given component.
Three basic approaches for enhancing thermal performance are listed below:
•
•
•
Improving the power dissipation capability of the PCB design
Improving the thermal coupling of the component to the PCB
Introducing airflow into the system
The maximum recommended junction temperature (TJ) of the TPS62684 for full 100k hour lifetime is 105°C. The
thermal resistance of the 6-pin WCSP package (YFF-6) is RθJA = 108.9°C/W. Regulator operation is specified to
a maximum steady-state ambient temperature TA of 85°C. Therefore, the maximum power dissipation at
TJ=105°C is about 180 mW and at TJ=125°C is about 367mW.
Copyright © 2014, Texas Instruments Incorporated
19
TPS62684
ZHCSCC2 –APRIL 2014
www.ti.com.cn
Thermal, Lifetime Information and Maximum Output Current (continued)
(5)
Proper PCB layout with a focus on thermal performance results in a reduced junction-to-ambient thermal
resistance RθJA and thereby reduces the device junction temperature, TJ.
The maximum peak output current of 1600mA for TPS62684 is defined by its internal current limit. The maximum
dc output current over lifetime (100k hours at TJ= 105°C) is 890mA. The device can supply peak output currents
above 890mA, so long as there are corresponding output currents below 890mA such that the average output
current remains below 890mA, while keeping the junction temperature below 105°C. Operating at output currents
above 890mA at junction temperatures above 105°C reduces the lifetime by electromigration effects.
For output currents above 960mA, a minimum supply voltage of 3.85V is recommended.
20
Copyright © 2014, Texas Instruments Incorporated
TPS62684
www.ti.com.cn
ZHCSCC2 –APRIL 2014
12 器件和文档支持
12.1 器件支持
12.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
12.1.2 参考书目
“使用频率调制技术的开关电源转换器中的电磁干扰 (EMI) 减少”，《电气与电子工程师协会 (IEEE) 电磁兼容性汇
刊》，卷4，NO.3，2005
年 8 月，第 569-576 页 作者 Josep Balcells，Alfonso Santolaria，Antonio
Orlandi，David González，Javier Gago。
12.2 Trademarks
NanoFree is a trademark of Texas Instruments.
Bluetooth is a registered trademark of Bluetooth SIG, Inc.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms and definitions.
13 机械封装和可订购信息
以下页中包括机械封装和可订购信息。 这些信息是针对指定器件可提供的最新数据。 这些数据会在无通知且不对
本文档进行修订的情况下发生改变。 要获得这份数据表的浏览器版本，请查阅左侧导航栏。
Copyright © 2014, Texas Instruments Incorporated
21
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS62684YFFR
TPS62684YFFT
ACTIVE
ACTIVE
DSBGA
DSBGA
YFF
YFF
6
6
3000 RoHS & Green
250 RoHS & Green
SNAGCU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 85
-40 to 85
D1
D1
SNAGCU
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Addendum-Page 2
PACKAGE OUTLINE
YFF0006
DSBGA - 0.625 mm max height
SCALE 10.500
DIE SIZE BALL GRID ARRAY
A
B
E
BALL A1
CORNER
D
0.625 MAX
C
SEATING PLANE
0.05 C
0.30
0.12
BALL TYP
0.4 TYP
C
B
SYMM
0.8
D: Max = 1.434 mm, Min =1.374 mm
E: Max = 1.138 mm, Min =1.078 mm
TYP
0.4 TYP
A
0.3
6X
2
1
0.2
SYMM
0.015
C A B
4223785/A 06/2017
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
www.ti.com
EXAMPLE BOARD LAYOUT
YFF0006
DSBGA - 0.625 mm max height
DIE SIZE BALL GRID ARRAY
(0.4) TYP
6X ( 0.23)
(0.4) TYP
1
2
A
SYMM
B
C
SYMM
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:30X
0.05 MAX
0.05 MIN
METAL UNDER
SOLDER MASK
(
0.23)
METAL
EXPOSED
METAL
EXPOSED
METAL
(
0.23)
SOLDER MASK
OPENING
SOLDER MASK
OPENING
NON-SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
NOT TO SCALE
4223785/A 06/2017
NOTES: (continued)
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints. For more information,
see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009).
www.ti.com
EXAMPLE STENCIL DESIGN
YFF0006
DSBGA - 0.625 mm max height
DIE SIZE BALL GRID ARRAY
(0.4) TYP
2
6X ( 0.25)
(0.4) TYP
(R0.05) TYP
1
A
B
SYMM
METAL
TYP
C
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
SCALE:35X
4223785/A 06/2017
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
www.ti.com
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Copyright © 2023，德州仪器 (TI) 公司
相关型号：
TPS62690
500-mA / 600-mA, 4-MHz HIGH-EFFICIENCY STEP-DOWN CONVERTERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPS62690YFFR
500-mA / 600-mA, 4-MHz HIGH-EFFICIENCY STEP-DOWN CONVERTERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPS62690YFFT
500-mA / 600-mA, 4-MHz HIGH-EFFICIENCY STEP-DOWN CONVERTERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPS62691
500-mA / 600-mA, 4-MHz HIGH-EFFICIENCY STEP-DOWNWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPS62691YFF
500-mA / 600-mA, 4-MHz HIGH-EFFICIENCY STEP-DOWNWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPS62691YFFR
500-mA / 600-mA, 4-MHz HIGH-EFFICIENCY STEP-DOWNWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPS62691YFFT
500-mA / 600-mA, 4-MHz HIGH-EFFICIENCY STEP-DOWNWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPS62692
800-mA , 3-MHz HIGH-EFFICIENCY STEP-DOWN CONVERTERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPS62693
800mA、3MHz 高效降压转换器，TPS6269xWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPS62693YFDR
800-mA , 3-MHz HIGH-EFFICIENCY STEP-DOWN CONVERTERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPS62693YFDT
800-mA , 3-MHz HIGH-EFFICIENCY STEP-DOWN CONVERTERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
TPS62697
500-mA / 600-mA, 4-MHz HIGH-EFFICIENCY STEP-DOWNWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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TI
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