TPS62867RQYR [TI]
采用 1.5mm x 2.5mm QFN 封装的 2.4V 至 5.5V 输入、6A 同步降压转换器 | RQY | 9 | -40 to 125;型号: | TPS62867RQYR |
厂家: | TEXAS INSTRUMENTS |
描述: | 采用 1.5mm x 2.5mm QFN 封装的 2.4V 至 5.5V 输入、6A 同步降压转换器 | RQY | 9 | -40 to 125 转换器 |
文件: | 总29页 (文件大小:2069K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TPS62865, TPS62867
ZHCSNO7 –MARCH 2021
TPS62865/TPS62867 采用1.5mm × 2.5mm QFN 封装的2.4V 至5.5V 输入电压、4A
和6A 同步降压转换器
1 特性
3 说明
• 可实现快速瞬态响应的DCS-Control 拓扑
• 11mΩ和10.5mΩ内部功率MOSFET
• 1% 的输出电压精度
TPS62865 和 TPS62867 器件是高频同步降压转换
器,可提供高效、灵活和高功率密度解决方案。这些转
换器在中高负载条件下以PWM 模式运行,并在轻负载
时自动进入省电模式运行,从而在整个负载电流范围内
保持高效率。这些器件还可强制进入PWM 模式运行,
尽量减少输出电压纹波。凭借其 DCS-Control 架构,
这些器件可实现出色的负载瞬态性能并符合严格的输出
电压精度要求。此类器件可提供电源正常信号和内部软
启动电路。这些器件能够以 100% 模式运行。在故障
保护方面,这些器件加入了断续短路保护以及热关断功
能。
• 4µA 工作静态电流
• 2.4V 至5.5V 输入电压范围
• 0.6V 至VIN 输出电压范围
• Voltage Selection Table 固定(可通过外部电阻器
进行选择)和可调节输出电压版本
• 2.4MHz 开关频率
• 强制PWM 或省电模式
• 输出电压放电
• 100% 占空比模式
• 断续短路保护
• 具有窗口比较器的电源正常指示器
• 热关断
• 解决方案尺寸可降至30mm2
• 采用具有0.5mm 间距的1.5mm × 2.5mm QFN 封
装
器件信息
封装(1)
封装尺寸(标称值)
器件型号
TPS62865
TPS62867
QFN (9)
1.5 × 2.5 × 1mm
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
• 使用TPS62865 并借助WEBENCH® Power
Designer 创建定制设计方案
• 使用TPS62867 并借助WEBENCH® Power
Designer 创建定制设计方案
2 应用
• 为FPGA、CPU、ASIC 或视频芯片组提供内核电
源
• 机器视觉摄像机
• IP 网络摄像头
• 固态硬盘
• 光学模块
• 多功能打印机
L1
L1
0.22 µH
VIN
VIN
VOUT
0.9 V
VOUT
1.8 V
0.22 µH
2.4 V to 5.5 V
2.4 V to 5.5 V
VIN
EN
VIN
EN
SW
SW
C3, C4
2×22 µF
C3, C4
2×22 µF
VOS
VOS
FB
C1, C2
2×10 µF
C1, C2
2×10 µF
R3
R3
R1
R2
PG
PG
PG
FB
PG
VSET/MODE
VSET/MODE
R4
133 k
PGND
AGND
PGND
AGND
典型应用原理图- 可调输出电压
典型应用原理图- 固定输出电压
本文档旨在为方便起见,提供有关TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SLUSDN8
TPS62865, TPS62867
ZHCSNO7 –MARCH 2021
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Table of Contents
8.4 Device Functional Modes..........................................10
9 Application and Implementation..................................12
9.1 Application Information............................................. 12
9.2 Typical Application.................................................... 12
10 Power Supply Recommendations..............................19
11 Layout...........................................................................20
11.1 Layout Guidelines................................................... 20
11.2 Layout Example...................................................... 20
12 Device and Documentation Support..........................22
12.1 Device Support....................................................... 22
12.2 Documentation Support.......................................... 22
12.3 支持资源..................................................................22
12.4 Trademarks.............................................................22
12.5 静电放电警告.......................................................... 22
12.6 术语表..................................................................... 22
13 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Device Options................................................................ 3
6 Pin Configuration and Functions...................................3
7 Specifications.................................................................. 4
7.1 Absolute Maximum Ratings ....................................... 4
7.2 ESD Ratings .............................................................. 4
7.3 Recommended Operating Conditions ........................4
7.4 Thermal Information ...................................................5
7.5 Electrical Characteristics ............................................6
7.6 Typical Characteristics................................................7
8 Detailed Description........................................................8
8.1 Overview.....................................................................8
8.2 Functional Block Diagram...........................................8
8.3 Feature Description.....................................................8
Information.................................................................... 23
4 Revision History
注:以前版本的页码可能与当前版本的页码不同
DATE
REVISION
NOTES
March 2021
*
Initial Release
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5 Device Options
PART NUMBER(1)
OUTPUT CURRENT
TPS62865
TPS62867
4 A
6 A
(1) For all available packages, see the orderable addendum at the end of the data sheet.
6 Pin Configuration and Functions
1
9
8
PGND
VIN
2
7
SW
3
4
5
6
Not to scale
图6-1. 9-Pin RQY QFN Package (Top View)
表6-1. Pin Functions
PIN
DESCRIPTION
NAME
AGND
FB
NO.
1
Analog ground pin
9
Feedback pin. For the fixed output voltage versions, the pin must be connected to the output directly.
Output voltage sense pin. This pin must be directly connected to the output capacitor.
Power ground pin
VOS
PGND
SW
8
2
7
Switch pin of the power stage
VIN
3
Power supply input voltage pin
Device enable pin. To enable the device, this pin needs to be pulled high. Pulling this pin low disables
the device. Do not leave floating.
EN
4
6
5
Voltage Set pin
In fixed output voltage applications, connect a resistor between this pin and GND to set the output
voltage (see 表8-2). After start-up, connect this pin to a high level to enable forced-PWM operation, or
to a low level to enable power-save mode.
VSET/MODE
In adjustable output voltage applications, connect this pin to a high level to enable forced-PWM
operation, or to a low level to enable power-save mode operation.
Power-good open-drain output pin. The pullup resistor can be connected to voltages up to 5.5 V. If
unused, leave it floating.
PG
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7 Specifications
7.1 Absolute Maximum Ratings
See (1)
MIN
–0.3
–0.3
–2.5
MAX
UNIT
VIN, EN, VOS, FB, PG, VSET/MODE
SW (DC)
6
VIN + 0.3
10
Voltage(2)
V
SW (AC, less than 10 ns)(3)
Sink current at PG
ISINK_PG
TJ
1
mA
°C
Junction temperature
Storage temperature
150
–40
–65
Tstg
150
°C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) All voltage values are with respect to network ground terminal.
(3) While switching
7.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001, all pins(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC
specification JESD22-C101, all pins(2)
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
Over operating junction temperature range (unless otherwise noted)
MIN
2.4
NOM
MAX
5.5
UNIT
V
VIN
Supply Voltage Range
Output Voltage Range
Slew rate at VIN(1)
VOUT
SR
0.6
VIN
V
mV/µs
–10
Output current, TPS62865
Output current, TPS62867
Junction temperature
4
6
IOUT
TJ
A
125
°C
–40
(1) The falling slew rate of VIN must be limited if VIN goes below VUVLO
.
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7.4 Thermal Information
TPS6286x
TPS62867EVM-121
THERMAL METRIC(1)
JEDEC 51-7
9 PINS
90.9
UNIT
9 PINS
RθJA
RθJC(top)
RθJB
ΨJT
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
60.3
°C/W
°C/W
°C/W
°C/W
°C/W
68.2
n/a(2)
n/a(2)
3.3
25.0
Junction-to-top characterization parameter
Junction-to-board characterization parameter
1.9
24.7
31.5
ΨJB
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(2) Not applicable to an EVM
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7.5 Electrical Characteristics
TJ = –40°C to 125°C, and VIN = 2.4 V to 5.5 V. Typical values are at TJ = 25°C and VIN = 5 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNIT
SUPPLY
IQ
Quiescent current
EN = High, no load, device not switching
4
8
10
µA
µA
EN = High, no load, device not switching,
VVOS = 1.8 V
IQ_VOS
ISD
VUVLO
Operating quiescent current into VOS pin
Shutdown current
0.24
2.3
2.2
150
20
1
2.4
2.3
µA
V
EN = Low, TJ = –40℃to 85℃
VIN rising
VIN falling
TJ rising
TJ falling
2.2
2.1
Undervoltage lockout threshold
V
Thermal shutdown threshold
Thermal shutdown hysteresis
°C
°C
TJSD
LOGIC INTERFACE
High-level input threshold voltage at EN
and VSET/MODE
VIH
0.84
V
Low-level input threshold voltage at
EN and VSET/MODE
VIL
0.4
0.1
V
IEN,LKG
Input leakage current into EN pin
0.01
µA
STARTUP, POWER GOOD
Time from EN high to device starts switching
249-kΩ resistor connected between VSET/MODE
and GND
tDelay
Enable delay time
420
700 1100
µs
tRamp
VPG
Output voltage ramp time
Power good lower threshold
Power good upper threshold
Low-level output voltage
Power good deglitch delay
Time from device starts switching to power good
VVOS referenced to VOUT nominal
VVOS referenced to VOUT nominal
Isink = 1 mA, PG pin version
0.8
1
1.5
ms
85%
91%
96%
103% 111% 120%
VPG,OL
0.36
34
V
tPG,DLY
Rising and falling edges
µs
OUTPUT
Fixed voltage operation, FPWM, no load, TJ =
0°C to 85°C
1%
–1%
VOUT
Output voltage accuracy
Fixed voltage operation, FPWM, no load
Adjustable voltage operation
2%
606
0.4
2.5
–2%
VFB
Feedback voltage
594
600
0.01
0.2
mV
µA
µA
IFB,LKG
Input leakage into FB pin
Adjustable voltage operation, VFB = 0.6 V
Output discharge disabled, VVOS = 1.8 V
IVOS,LKG Input leakage current into VOS pin
RDIS
Output discharge resistor at VOS pin
Load regulation
3.5
Ω
VOUT = 0.9 V, FPWM
0.04
%/A
POWER SWITCH
High-side FET on-resistance
11
10.5
5.5
mΩ
mΩ
A
RDS(on)
Low-side FET on-resistance
TPS62865
5
7
6
High-side FET forward current limit
TPS62867
7.7
8.5
A
TPS62865
4.5
A
ILIM
Low-side FET forward current limit
TPS62867
6.5
A
Low-side FET negative current limit
PWM switching frequency
TPS62865, TPS62867
IOUT = 1 A, VOUT = 0.9 V
A
–3
2.4
fSW
MHz
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7.6 Typical Characteristics
30
27.5
25
27.5
25
TJ = –40 °C
TJ = 25 °C
TJ = 85 °C
TJ = 125 °C
TJ = –40 °C
TJ = 25 °C
TJ = 85 °C
TJ = 125 °C
22.5
20
22.5
20
17.5
15
17.5
15
12.5
10
12.5
10
7.5
7.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Supply Voltage (V)
Supply Voltage (V)
图7-1. High-Side FET On-Resistance
图7-2. Low-Side FET On-Resistance
10
8
1.0
0.8
0.6
0.4
0.2
0.0
TJ = –40 °C
TJ = –40 °C
TJ = 25 °C
TJ = 85 °C
TJ = 125 °C
TJ = 25 °C
TJ = 85 °C
TJ = 125 °C
6
4
2
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Supply Voltage (V)
Supply Voltage (V)
图7-3. Quiescent Current
图7-4. Shutdown Current
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8 Detailed Description
8.1 Overview
The TPS62865 and TPS62867 synchronous step-down converters use the DCS-Control (Direct Control with
Seamless transition into Power Save Mode) topology. This is an advanced regulation topology that combines the
advantages of hysteretic and current-mode control schemes.
The DCS-Control topology operates in PWM (pulse width modulation) mode for medium to heavy load conditions
and in Power Save Mode at light load currents. In PWM mode, the converter operates with its 2.4-MHz nominal
switching frequency, having a controlled frequency variation over the input voltage range. Since DCS-Control
supports both operation modes (PWM and PFM) within a single building block, the transition from PWM mode to
Power Save Mode is seamless and does not affect on the output voltage. The devices offer both excellent DC
voltage and superior load transient regulation combined with very low output voltage ripple.
8.2 Functional Block Diagram
PG
VIN
91%
+
–
34-µs
Deglitch
VX
Control Logic
Reference Selection
UVLO
+
–
EN
AGND
111%
Thermal Shutdown
Startup Ramp
VSET/MODE
HS-FET Forward
Current Limit
VSW
VIN
TON
HICCUP
Direct Control
&
VSW
Compensation
SW
Gate
Driver
Modulator
Vref
+
Comparator
EA
FB
VX
–
LS-FET
VOS
Forward Current Limit
Zero Current Detect
Negative Current Limit
k = 1, 0.5, 0.25
k
PGND
RDIS
PGND
AGND
AGND
AGND
8.3 Feature Description
8.3.1 Power Save Mode
As the load current decreases, the device enters Power Save Mode (PSM) operation. PSM occurs when the
inductor current becomes discontinuous, which is when it reaches 0 A during a switching cycle. Power Save
Mode is based on a fixed on-time architecture, as shown in 方程式1.
VOUT
tON
=
× 416 ns
V
IN
(1)
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In Power Save Mode, the output voltage rises slightly above the nominal output voltage. This effect is minimized
by increasing the output capacitor or inductor value.
When VIN decreases to typically 15% above VOUT, the TP6286x does enter Power Save Mode, regardless of the
load current. The device maintains output regulation in PWM mode.
8.3.2 Forced PWM Mode
Connecting the VSET/MODE pin to logic high after the start-up, the device switches at 2.4 MHz, even with a light
load. This reduces the output voltage ripple and allows simple filtering of the switching frequency for noise-
sensitive applications. Efficiency at light load is lower in Forced PWM mode (FPWM).
8.3.3 100% Duty Cycle Mode Operation
There is no limitation for small duty cycles since even at very low duty cycles, the switching frequency is reduced
as needed to always ensure a proper regulation.
If the output voltage level comes close to the input voltage, the device enters 100% mode. While the high-side
switch is constantly turned on, the low-side switch is switched off. The difference between VIN and VOUT is
determined by the voltage drop across the high-side MOSFET and the DC resistance of the inductor. The
minimum VIN that is needed to maintain a specific VOUT value is estimated as:
V
IN,MIN
= VOUT + (RDS (ON) + RL)IOUT ,MAX
(2)
where
• VIN,MIN is the minimum input voltage to maintain an output voltage
• IOUT,MAX is the maximum output current
• RDS(on) is the high-side FET ON-resistance
• RL is the inductor ohmic resistance (DCR)
8.3.4 Soft Start
After enabling the device, there is a 700-µs (typical) enable delay (tdelay) before the device starts switching. After
the enable delay, an internal soft start-up circuitry ramps up the output voltage with a period of 1 ms (tRamp). This
avoids excessive inrush current and creates a smooth output voltage rise-slope. It also prevents excessive
voltage drops of primary cells and rechargeable batteries with high internal impedance. The device is able to
start into a pre-biased output capacitor. It starts with the applied bias voltage and ramps the output voltage to its
nominal value.
VIN
EN
VOUT
ttDelay
t
ttRamp
ttStartupt
t
图8-1. Start-up Sequence
8.3.5 Switch Current Limit and HICCUP Short-Circuit Protection
The switch current limit prevents the device from high inductor current and from drawing excessive current from
the battery or input voltage rail. Excessive current might occur with a shorted or saturated inductor or a heavy
load or shorted output circuit condition. If the inductor current reaches the threshold ILIM, cycle by cycle, the high-
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side MOSFET is turned off and the low-side MOSFET is turned on, while the inductor current ramps down to the
low-side MOSFET current limit.
When the high-side MOSFET current limit is triggered 32 times, the device stops switching. The device then
automatically re-starts with an internal soft start-up after a typical delay time of 128 µs has passed. This is
named HICCUP short-circuit protection. The device repeats this mode until the high load condition disappears.
8.3.6 Undervoltage Lockout
To avoid mis-operation of the device at low input voltages, undervoltage lockout (UVLO) is implemented when
the input voltage is lower than VUVLO. The device stops switching and the output voltage discharge is active
when the device is in UVLO. When the input voltage recovers, the device automatically returns to operation with
an internal soft start-up.
8.3.7 Thermal Shutdown
When the junction temperature exceeds TJSD, the device goes into thermal shutdown, stops switching, and
activates the output voltage discharge. When the device temperature falls below the threshold by the hysteresis,
the device returns to normal operation automatically with an internal soft start-up. During thermal shutdown, the
internal register values are kept.
8.4 Device Functional Modes
8.4.1 Enable and Disable (EN)
The device is enabled by setting the EN pin to a logic high. In shutdown mode (EN = low), the internal power
switches and the entire control circuitry are turned off. An internal switch smoothly discharges the output through
the VOS pin in shutdown mode. Do not leave the EN pin floating.
8.4.2 Power Good (PG)
The device has an open-drain power-good pin, which is specified to sink up to 1 mA. The power-good output
requires a pullup resistor connecting to any voltage rail less than 5.5 V. The PG has a deglitch delay of 34 µs.
The PG signal can be used for sequencing of multiple rails by connecting it to the EN pin of other converters.
Leave the PG pin unconnected when not used.
表8-1. PG Function Table
DEVICE CONDITIONS
0.9 × VOUT_NOM ≤VVOS ≤1.1 × VOUT_NOM
VVOS < 0.9 × VOUT_NOM or VVOS > 1.1 × VOUT_NOM
EN = low
PG PIN
Hi-Z
Enable
Low
Shutdown
Low
Thermal shutdown
UVLO
TJ > TJSD
Low
1.8 V < VIN < VUVLO
Low
Power supply removal
VIN < 1.8 V
Undefined
8.4.3 Voltage Setting and Mode Selection (VSET/MODE)
During the enable delay (tDelay), the device configuration is set by an external resistor connected to the VSET/
MODE pin through an internal R2D (resistor to digital) converter. 表8-2 shows the options.
The R2D converter has an internal current source that applies current through the external resistor and an
internal ADC that reads back the resulting voltage level. Depending on the level, the output voltage is set. Once
this R2D conversion is finished, the current source is turned off to avoid current flowing through the external
resistor. Ensure that there is no additional current path or capacitance greater than 30 pF from this pin to GND
during R2D conversion. Otherwise, a false value is set.
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表8-2. Voltage Selection Table
RESISTOR (E96 SERIES, ±1% ACCURACY) AT VSET/MODE PIN
FIXED OR ADJUSTABLE OUTPUT VOLTAGE
adjustable
3.30 V
2.50 V
1.80 V
1.50 V
reserved
1.35 V
1.20 V
1.10 V
1.05 V
1.00 V
0.95 V
0.90 V
0.85 V
0.80 V
adjustable
249 kΩor logic high
205 kΩ
162 kΩ
133 kΩ
105 kΩ
86.6 kΩ
68.1 kΩ
56.2 kΩ
44.2 kΩ
36.5 kΩ
28.7 kΩ
23.7 kΩ
18.7 kΩ
15.4 kΩ
12.1 kΩ
10 kΩor logic low
When the device is set as a fixed output voltage converter, then FB pin must be connected to the output directly.
Refer to 图8-2.
L1
0.22 µH
VIN
VOUT
1.8 V
2.4 V to 5.5 V
VIN
EN
SW
C3, C4
2×22 µF
VOS
FB
C1, C2
2×10 µF
R3
PG
PG
VSET/MODE
R4
133 k
PGND
AGND
图8-2. Fixed Start-up Output Voltage Application Circuit
After the start-up period (tStartup), a different operation mode can be selected. When VSET/MODE is high, the
device operates in forced PWM mode, otherwise the device operates in power save mode.
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
The following section discusses the design of the external components to complete the power supply design for
several input and output voltage options by using typical applications as a reference.
9.2 Typical Application
L1
0.22 µH
VIN
VOUT
0.9 V
2.4 V to 5.5 V
VIN
EN
SW
C3, C4
2×22 µF
VOS
C1, C2
2×10 µF
R3
R1
R2
PG
PG
FB
VSET/MODE
PGND
AGND
图9-1. Typical Application
9.2.1 Design Requirements
For this design example, use the parameters listed in 表9-1 as the input parameters.
表9-1. Design Parameters
DESIGN PARAMETER
Input voltage
EXAMPLE VALUE
2.4 V to 5.5 V
0.9 V
Output voltage
Maximum output current
6 A
表9-2 lists the components used for the example.
表9-2. List of Components
REFERENCE
DESCRIPTION
MANUFACTURER(1)
C1, C2
C3, C4
L1
Murata
Murata
Coilcraft
Std
10 μF, ceramic capacitor, 10 V, X7R, size 0603,GRM188Z71A106KA73
22 µF, ceramic capacitor, 6.3 V, X7R, size 0805, GRM21BZ70J226ME44
0.22 µH, power inductor, XAL4020-221ME (12 A, 5.81 mΩ)
Depending on the output voltage, chip resistor, 1/16 W, 1%, size 0402
100 kΩ, chip resistor, 1/16 W, 1%, size 0402
R1
R2
Std
R3
Std
100 kΩ, chip resistor, 1/16 W, 1%, size 0402
(1) See the Third-party Products disclaimer.
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9.2.2 Detailed Design Procedure
9.2.2.1 Custom Design With WEBENCH® Tools
Click here to create a custom design using the TPS62865 device with the WEBENCH® Power Designer.
Click here to create a custom design using the TPS62867 device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
• Run electrical simulations to see important waveforms and circuit performance
• Run thermal simulations to understand board thermal performance
• Export customized schematic and layout into popular CAD formats
• Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
9.2.2.2 Setting The Output Voltage
The output voltage is set by an external resistor divider according to 方程式3:
(3)
R2 must not be higher than 200 kΩ to achieve high efficiency at light load while providing acceptable noise
sensitivity.
For the fixed output versions, connect the FB pin to the output. R1 and R2 are not needed.
9.2.2.3 Output Filter Design
The inductor and the output capacitor together provide a low-pass filter. To simplify this process, 表 9-3 outlines
possible inductor and capacitor value combinations for most applications. Checked cells represent combinations
that are proven for stability by simulation and lab testing. Further combinations must be checked for each
individual application.
表9-3. Matrix of Output Capacitor and Inductor Combinations
NOMINAL COUT [µF](3)
NOMINAL L [µH](2)
0.22
10
2 × 22 or 47
3 × 22
150
(1)
+
+
+
(1) This LC combination is the standard value and recommended for most applications.
(2) Inductor tolerance and current derating is anticipated. The effective inductance can vary by 20% and –30%.
(3) Capacitance tolerance and bias voltage derating is anticipated. The effective capacitance can vary by 20% and –50%.
9.2.2.4 Inductor Selection
The main parameter for the inductor selection is the inductor value, then the saturation current of the inductor. To
calculate the maximum inductor current under static load conditions, 方程式4 is given.
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(4)
where
• IOUT,MAX is the maximum output current
• ΔIL is the inductor current ripple
• fSW is the switching frequency
• L is the inductor value
It is recommended to choose a saturation current for the inductor that is approximately 20% to 30% higher than
IL,MAX. In addition, DC resistance and size must also be taken into account when selecting an appropriate
inductor. 表9-4 lists recommended inductors.
表9-4. List of Recommended Inductors
DC RESISTANCE
INDUCTANCE CURRENT RATING
DIMENSIONS
[L × W × H mm]
PART NUMBER
[µH](1)
[A]
18.7
6.6
[mΩ]
0.22
4 × 4 × 2
5.81
13
Coilcraft, XAL4020-221ME
Murata, DFE201612E-R24M
0.24
2 × 1.6 × 1.2
(1) See the Third-party Products disclaimer.
9.2.2.5 Capacitor Selection
The input capacitor is the low-impedance energy source for the convertersm which helps to provide stable
operation. A low-ESR multilayer ceramic capacitor is recommended for the best filtering and must be placed
between VIN and GND as close as possible to those pins. For most applications, 8 μF of effective 1 capacitance
is sufficient, however, a larger value reduces input current ripple.
The architecture of the device allows the use of tiny ceramic output capacitors with low equivalent series
resistance (ESR). These capacitors provide low output voltage ripple and are recommended. To keep its low
resistance up to high frequencies and to get narrow capacitance variation with temperature, TI recommends
1
using X7R or X5R dielectrics. The recommended typical output capacitor value is 30 μF of effective
capacitance. This capacitance can vary over a wide range as outlined in the output filter selection table.
1
The effective capacitance is the capacitance after tolerance, temperature, and DC bias effects have been considered.
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9.2.3 Application Curves
VIN = 5.0 V, VOUT = 0.9 V, TA = 25 °C, BOM = 表9-2, unless otherwise noted.
100
90
80
70
60
50
40
30
20
10
0
0.610
0.605
0.600
0.595
0.590
0.585
0.580
0.575
0.570
+1%
–1%
VIN = 2.4 V – FPWM
VIN = 2.4 V – PSM
VIN = 3.3 V – FPWM
VIN = 3.3 V – PSM
VIN = 5.0 V – FPWM
VIN = 5.0 V – PSM
VIN = 2.5 V – FPWM
VIN = 2.5 V – PSM
VIN = 3.3 V – FPWM
VIN = 3.3 V – PSM
VIN = 5.0 V – FPWM
VIN = 5.0 V – PSM
1m
10m
100m
Output Current (A)
1
10
1m
10m
100m
Output Current (A)
1
10
VOUT = 0.6 V
图9-2. Efficiency
VOUT = 0.6 V
图9-3. Load Regulation
100
90
80
70
60
50
40
30
20
10
0
0.92
0.91
0.90
0.89
0.88
0.87
0.86
0.85
0.84
+1%
–1%
VIN = 2.4 V – FPWM
VIN = 2.4 V – PSM
VIN = 3.3 V – FPWM
VIN = 3.3 V – PSM
VIN = 5.0 V – FPWM
VIN = 5.0 V – PSM
VIN = 2.5 V – FPWM
VIN = 2.5 V – PSM
VIN = 3.3 V – FPWM
VIN = 3.3 V – PSM
VIN = 5.0 V – FPWM
VIN = 5.0 V – PSM
1m
10m
100m
Output Current (A)
1
10
1m
10m
100m
Output Current (A)
1
10
VOUT = 0.9 V
图9-4. Efficiency
VOUT = 0.9 V
图9-5. Load Regulation
100
90
80
70
60
50
40
30
20
10
0
1.22
1.21
1.20
1.19
1.18
1.17
1.16
1.15
1.14
+1%
–1%
VIN = 2.4 V – FPWM
VIN = 2.4 V – PSM
VIN = 3.3 V – FPWM
VIN = 3.3 V – PSM
VIN = 5.0 V – FPWM
VIN = 5.0 V – PSM
VIN = 2.5 V – FPWM
VIN = 2.5 V – PSM
VIN = 3.3 V – FPWM
VIN = 3.3 V – PSM
VIN = 5.0 V – FPWM
VIN = 5.0 V – PSM
1m
10m
100m
Output Current (A)
1
10
1m
10m
100m
Output Current (A)
1
10
VOUT = 1.2 V
图9-6. Efficiency
VOUT = 1.2 V
图9-7. Load Regulation
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9.2.3 Application Curves (continued)
100
90
80
70
60
50
40
1.83
1.82
1.81
1.80
1.79
1.78
1.77
1.76
1.75
1.74
1.73
+1%
–1%
VIN = 2.4 V – FPWM
VIN = 2.5 V – FPWM
30
20
10
0
VIN = 2.4 V – PSM
VIN = 3.3 V – FPWM
VIN = 3.3 V – PSM
VIN = 5.0 V – FPWM
VIN = 5.0 V – PSM
VIN = 2.5 V – PSM
VIN = 3.3 V – FPWM
VIN = 3.3 V – PSM
VIN = 5.0 V – FPWM
VIN = 5.0 V – PSM
1m
10m
100m
Output Current (A)
1
10
1m
10m
100m
Output Current (A)
1
10
VOUT = 1.8 V
图9-8. Efficiency
VOUT = 1.8 V
图9-9. Load Regulation
100
90
80
70
60
50
40
30
20
10
0
2.56
2.54
2.52
2.50
2.48
2.46
2.44
2.42
2.40
2.38
+1%
–1%
VIN = 3.3 V – FPWM
VIN = 3.3 V – PSM
VIN = 3.7 V – FPWM
VIN = 3.7 V – PSM
VIN = 5.0 V – FPWM
VIN = 5.0 V – PSM
VIN = 3.3 V – FPWM
VIN = 3.3 V – PSM
VIN = 3.7 V – FPWM
VIN = 3.7 V – PSM
VIN = 5.0 V – FPWM
VIN = 5.0 V – PSM
1m
10m
100m
Output Current (A)
1
10
1m
10m
100m
Output Current (A)
1
10
VOUT = 2.5 V
图9-10. Efficiency
VOUT = 2.5 V
图9-11. Load Regulation
100
90
80
70
60
50
40
30
20
10
0
3.36
3.34
3.32
3.30
3.28
3.26
3.24
3.22
3.20
3.18
+1%
–1%
VIN = 3.7 V – FPWM
VIN = 3.7 V – PSM
VIN = 5.0 V – FPWM
VIN = 5.0 V – PSM
VIN = 3.7 V – FPWM
VIN = 3.7 V – PSM
VIN = 5.0 V – FPWM
VIN = 5.0 V – PSM
1m
10m
100m
Output Current (A)
1
10
1m
10m
100m
Output Current (A)
1
10
VOUT = 3.3 V
图9-12. Efficiency
VOUT = 3.3 V
图9-13. Load Regulation
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9.2.3 Application Curves (continued)
3.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
VOUT = 0.6 V – FPWM
1.0
0.5
0.0
VOUT = 0.6 V – PSM
VOUT = 1.8 V – FPWM
VOUT = 1.8 V – PSM
VOUT = 3.3 V – FPWM
VOUT = 3.3 V – PSM
VOUT = 0.6 V
VOUT = 1.2 V
VOUT = 3.3 V
0
1
2
3
4
5
6
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Output Current (A)
Input Voltage (V)
VIN = 5 V
IOUT = 1 A
图9-14. Switching Frequency
图9-15. Switching Frequency
IOUT = 6 A
IOUT = 0.1 A
图9-16. PWM Operation
图9-17. PSM Operation
IOUT = 0.1 A
No Load
图9-18. Forced-PWM Operation
图9-19. Startup with No-Load
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9.2.3 Application Curves (continued)
IOUT = 0.6 A to 5.4 A
IOUT = 0.6 A to 5.4 A
图9-21. Load Transient - PSM Operation
图9-20. Load Transient - PWM Operation
IOUT = 1 A
图9-22. HICCUP Short Circuit Protection
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10 Power Supply Recommendations
The device is designed to operate from an input voltage supply range from 2.4 V to 5.5 V. Ensure that the input
power supply has a sufficient current rating for the application.
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11 Layout
11.1 Layout Guidelines
A proper layout is critical for the operation of any switched mode power supply, especially at high switching
frequencies. The PCB layout of the TPS62865 and TPS62867 devices requires careful attention to ensure best
performance. A poor layout can lead to issues like bad line and load regulation, instability, increased EMI
radiation, and noise sensitivity. Refer to the Five Steps to a Great PCB Layout for a Step-Down Converter
technical brief for a detailed discussion of general best practices. The following are specific recommendations for
the TPS62865 and TPS62867:
• The input capacitor or capacitors must be placed as close as possible to the VIN and PGND pins of the
device. This is the most critical component placement. Route the input capacitor or capacitors directly to the
VIN and PGND pins, avoiding vias.
• Place the output inductor close to the SW pins. Minimize the copper area at the switch node.
• Place the output capacitor or capacitors ground close to the PGND pin and route it directly, avoiding vias.
Minimize the length of the connection from the inductor to the output capacitor. Connect the VOS pin directly
to the output capacitor.
• Sensitive traces, such as the connections to the VOS, FB, and VSEL pins, must be connected with short
traces and be routed away from any noise source, such as the SW pin.
• Make the connections from the input voltage of the system and the connection to the load as wide as
possible to minimize voltage drops.
• Have a solid ground plane between PGND and the input and output capacitor ground connections.
• The sensitive signal ground connections for the feedback voltage divider must be connected to a separate
signal ground trace.
11.2 Layout Example
Solution
Size 63mm²
VOUT
GND
SW
VIN
VIN
L1
GND
图11-1. Layout Example
11.2.1 Thermal Considerations
After the layout recommendations for component placement and routing have been followed, the PCB design
must focus on thermal performance. Thermal design is important and must be considered to remove the heat
generated in the device during operation. The device junction temperature must stay below its maximum rated
temperature of 125°C for correct operation.
Use wide traces and planes, especially to the PGND, VIN, and VOUT pins, and use vias to internal planes to
improve the power dissipation capability of the design. If the application allows it, use airflow in the system to
further improve cooling.
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The Thermal Information table provides the thermal parameters of the device and its package based on the
JEDEC standard 51-7. See the Semiconductor and IC Package Thermal Metrics application report for a detailed
explanation of each parameter. In addition to the JEDEC standard, the thermal information table also contains
the thermal parameters of the EVM. The EVM better reflects a real-world PCB design with thicker traces
connecting to the device.
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12 Device and Documentation Support
12.1 Device Support
12.1.1 第三方产品免责声明
TI 发布的与第三方产品或服务有关的信息,不能构成与此类产品或服务或保修的适用性有关的认可,不能构成此
类产品或服务单独或与任何TI 产品或服务一起的表示或认可。
12.1.2 Development Support
12.1.2.1 Custom Design With WEBENCH® Tools
Click here to create a custom design using the TPS62865 device with the WEBENCH® Power Designer.
Click here to create a custom design using the TPS62867 device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
• Run electrical simulations to see important waveforms and circuit performance
• Run thermal simulations to understand board thermal performance
• Export customized schematic and layout into popular CAD formats
• Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
12.2 Documentation Support
12.2.1 Related Documentation
For related documentation, see the following:
• Texas Instruments, Thermal Characteristics of Linear and Logic Packages Using JEDEC PCB Designs
application report
• Texas Instruments, Semiconductor and IC Package Thermal Metrics application report
12.3 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
12.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
® are registered trademarks of Texas Instruments.
所有商标均为其各自所有者的财产。
12.5 静电放电警告
静电放电(ESD) 会损坏这个集成电路。德州仪器(TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理
和安装程序,可能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级,大至整个器件故障。精密的集成电路可能更容易受到损坏,这是因为非常细微的参
数更改都可能会导致器件与其发布的规格不相符。
12.6 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
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13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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13-Apr-2021
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS62865RQYR
TPS62867RQYR
ACTIVE
ACTIVE
VQFN-HR
VQFN-HR
RQY
RQY
9
9
3000 RoHS & Green
3000 RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
-40 to 125
-40 to 125
2EAH
2DWH
NIPDAU
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
13-Apr-2021
Addendum-Page 2
PACKAGE OUTLINE
VQFN-HR - 1 mm max height
PLASTIC QUAD FLATPACK- NO LEAD
RQY0009A
1.6
1.4
B
A
2.6
2.4
PIN 1 INDEX AREA
1.0
0.8
C
SEATING PLANE
0.08 C
0.05
0.00
0.85
0.65
3X
(0.1) TYP
6
4
0.25
0.15
3X
0.1
C
C
A B
3
2
0.05
PKG
7
2X 0.4
0.4
0.3
6X
PIN 1 ID
(45° X 0.1)
8
1
0.3
0.2
6X
4X 0.5
PKG
4225639/A 03/2020
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
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EXAMPLE BOARD LAYOUT
VQFN-HR - 1 mm max height
PLASTIC QUAD FLATPACK- NO LEAD
RQY0009A
PKG
(0.95)
3X (0.95)
1
8
3X (0.2)
2
PKG
7
(2.35)
2X (0.4)
3
(R0.05) TYP
6
4
6X (0.55)
6X (0.25)
4X (0.5)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 25X
0.05 MIN
ALL AROUND
0.05 MAX
ALL AROUND
METAL
SOLDER MASK
OPENING
SOLDER MASK
OPENING
EXPOSED
METAL
EXPOSED
METAL UNDER
SOLDER MASK
METAL
NON- SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
NOT TO SCALE
4225639/A 03/2020
NOTES: (continued)
3. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271).
4. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
VQFN-HR - 1 mm max height
PLASTIC QUAD FLATPACK- NO LEAD
RQY0009A
PKG
(0.95)
3X (0.95)
1
8
3X (0.2)
2
PKG
7
(2.35)
2X (0.4)
3
(R0.05) TYP
6
4
6X (0.55)
6X (0.25)
4X (0.5)
SOLDER PASTE EXAMPLE
BASED ON 0.1mm THICK STENCIL
SCALE: 25X
4225639/A 03/2020
NOTES: (continued)
5.
Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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