TPS70918QDRVRQ1 [TI]

具有反向电流保护功能的汽车类 150mA、30V、超低 IQ、低压降稳压器 | DRV | 6 | -40 to 125;
TPS70918QDRVRQ1
型号: TPS70918QDRVRQ1
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

具有反向电流保护功能的汽车类 150mA、30V、超低 IQ、低压降稳压器 | DRV | 6 | -40 to 125

光电二极管 输出元件 稳压器 调节器
文件: 总35页 (文件大小:2372K)
中文:  中文翻译
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TPS709-Q1  
ZHCSC15C DECEMBER 2013REVISED JUNE 2018  
具有使能功能的 TPS709-Q1 150mA30V1µA IQ 稳压器  
1 特性  
3 说明  
1
符合汽车应用 标准  
具有符合 AEC Q100 标准的下列结果:  
TPS709-Q1 系列线性稳压器是针对功耗敏感型应用设  
计的超低静态电流 器件。一个精密带隙和误差放大器  
在温度范围内的精度为 2%。只有 1µA 的静态电流使  
得此器件成为由电池供电、要求非常小闲置状态功率耗  
散的常开系统的理想解决方案。为了增加安全性,这些  
器件还具有热关断、电流限制和反向电流保护功能。  
器件温度等级 1:环境工作温度范围为 –40°C  
125°C  
器件人体放电模式 (HBM) 静电放电 (ESD) 分类  
等级 2  
器件 CDM ESD 分类等级 C4B  
通过将 EN 引脚拉为低电平,可将该系列稳压器置于关  
断模式。这个模式的关断电流低至 150nA(典型  
值)。  
输入电压范围:2.7V 30V  
超低 IQ1μA  
反向电流保护  
TPS709-Q1 系列可提供 WSON-6 SOT-23-5 封  
装。  
ISHUTDOWN150nA  
支持 200mA 峰值输出  
在温度范围内精度为 2%  
器件信息(1)  
可提供固定输出电压:  
1.2V 6.5V  
器件型号  
TPS709-Q1  
封装  
SOT-23 (5)  
WSON (6)  
封装尺寸(标称值)  
2.90mm × 1.60mm  
2.00mm x 2.00mm  
热关断及过流保护  
封装:小外形尺寸晶体管 (SOT)-23-5 封装、晶圆  
级小外形无引线 (WSON)  
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附  
录。  
2 应用  
空白  
汽车  
空白  
信息娱乐系统  
车身控制模块  
导航系统  
空白  
空白  
微控制器备用电源  
空白  
space  
典型应用电路  
接地电流与 VIN 和温度间的关系  
3.5  
VO  
VI  
IN  
OUT  
NC  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
1 µF  
2.2 µF  
3
GND  
EN  
TPS709-Q1  
2.5  
2
1.5  
1
0.5  
0
5
10  
15  
20  
25  
30  
Input Voltage (V)  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
English Data Sheet: SLVSCE6  
 
 
 
 
 
 
 
 
 
 
TPS709-Q1  
ZHCSC15C DECEMBER 2013REVISED JUNE 2018  
www.ti.com.cn  
目录  
7.4 Device Functional Modes........................................ 16  
Application and Implementation ........................ 17  
8.1 Application Information............................................ 17  
8.2 Typical Application .................................................. 18  
Power Supply Recommendations...................... 18  
1
2
3
4
5
6
特性.......................................................................... 1  
应用.......................................................................... 1  
说明.......................................................................... 1  
修订历史记录 ........................................................... 2  
Pin Configuration and Functions......................... 4  
Specifications......................................................... 5  
6.1 Absolute Maximum Ratings ...................................... 5  
6.2 ESD Ratings.............................................................. 5  
6.3 Recommended Operating Conditions....................... 5  
6.4 Thermal Information.................................................. 5  
6.5 Electrical Characteristics........................................... 6  
6.6 Timing Requirements................................................ 6  
6.7 Typical Characteristics.............................................. 7  
Detailed Description ............................................ 14  
7.1 Overview ................................................................. 14  
7.2 Functional Block Diagram ....................................... 14  
7.3 Feature Description................................................. 14  
8
9
10 Layout................................................................... 19  
10.1 Layout Guidelines ................................................. 19  
10.2 Layout Examples................................................... 21  
11 器件和文档支持 ..................................................... 22  
11.1 器件支持................................................................ 22  
11.2 文档支持................................................................ 22  
11.3 接收文档更新通知 ................................................. 22  
11.4 社区资源................................................................ 22  
11.5 ....................................................................... 22  
11.6 静电放电警告......................................................... 22  
11.7 术语表 ................................................................... 23  
12 机械、封装和可订购信息....................................... 23  
7
4 修订历史记录  
注:之前版本的页码可能与当前版本有所不同。  
Changes from Revision B (March 2015) to Revision C  
Page  
Changed from: Dropout Voltage (V) to: Dropout Voltage (mV) in Figure 8, Figure 9, and Figure 10 ................................... 7  
Deleted last sentence from Shutdown section .................................................................................................................... 14  
Changed text From: "input supply range of 2.7 V to 6.5 V:" To: " input supply range of 2.7 V to 30 V." in the Power  
Supply Recommendations section ....................................................................................................................................... 18  
Changes from Revision A (December 2013) to Revision B  
Page  
在文档中增加了 DRV 封装、ESD 额定值建议运行条件时序要求 表、概述器件功能模式典型应用器件和文  
档支持 以及机械、封装和可订购信息 ............................................................................................................................. 1  
更改了应用信息特性 说明电源建议 布局 部分 ............................................................................................................. 1  
已删除低压降 特性 要点.......................................................................................................................................................... 1  
更改了应用部分....................................................................................................................................................................... 1  
更改了说明部分的最后一句..................................................................................................................................................... 1  
添加了器件信息................................................................................................................................................................... 1  
添加了首页曲线....................................................................................................................................................................... 1  
Added DRV package drawing to Pin Configuration and Functions section ........................................................................... 4  
Changed Pin Functions table: added DRV and I/O columns, added Thermal pad row, and changed EN pin description.... 4  
Changed Recommended Operating Conditions table............................................................................................................ 5  
Added DRV column to Thermal Information table.................................................................................................................. 5  
Changed Electrical Characteristics conditions ...................................................................................................................... 6  
Changed VOUT, ICL, ISHDN, and IREV symbols in Electrical Characteristics table ..................................................................... 6  
Changed VEN(HI) parameter into VEN(HI) and VEN(LO) parameters in Electrical Characteristics table ....................................... 6  
Changed TA parameter to TJ in Electrical Characteristics table............................................................................................. 6  
Changed Typical Characteristics section ............................................................................................................................... 7  
Changed junction temperature values in first paragraph of Thermal Protection section ..................................................... 15  
Changed 6.3-V to 10-V in second sentence of Detailed Design Procedure section............................................................ 18  
2
版权 © 2013–2018, Texas Instruments Incorporated  
 
TPS709-Q1  
www.ti.com.cn  
ZHCSC15C DECEMBER 2013REVISED JUNE 2018  
Changes from Original (December 2013) to Revision A  
Page  
已发布至生产 .......................................................................................................................................................................... 1  
Copyright © 2013–2018, Texas Instruments Incorporated  
3
TPS709-Q1  
ZHCSC15C DECEMBER 2013REVISED JUNE 2018  
www.ti.com.cn  
5 Pin Configuration and Functions  
DBV Package  
SOT-23-5  
(Top View)  
DRV Package  
WSON-6  
(Top View)  
IN  
GND  
EN  
1
2
3
5
4
OUT  
NC  
OUT  
NC  
1
2
3
6
5
4
IN  
NC  
EN  
GND  
Pin Functions  
PIN  
NO.  
I/O  
DESCRIPTION  
NAME  
DRV  
DBV  
Enable pin. Driving this pin high enables the device. Driving this pin low puts the  
device into low current shutdown. This pin can be left floating to enable the device.  
The maximum voltage must remain below 6.5 V.  
EN  
4
3
I
GND  
IN  
3
6
2
1
4
I
Ground  
Unregulated input to the device  
No internal connection  
NC  
2, 5  
Regulated output voltage. Connect a small 2.2-µF or greater ceramic capacitor  
from this pin to ground to assure stability.  
OUT  
1
5
O
The thermal pad is electrically connected to the GND node.  
Connect to the GND plane for improved thermal performance.  
Thermal pad  
4
Copyright © 2013–2018, Texas Instruments Incorporated  
TPS709-Q1  
www.ti.com.cn  
ZHCSC15C DECEMBER 2013REVISED JUNE 2018  
6 Specifications  
6.1 Absolute Maximum Ratings  
specified at TJ = –40°C to 125°C, unless otherwise noted; all voltages are with respect to GND(1)  
MIN  
MAX  
UNIT  
VIN  
–0.3  
–0.3  
–0.3  
32  
V
V
V
Voltage  
VEN  
VOUT  
IOUT  
7
7
Maximum output current  
Internally limited  
Output short-circuit duration  
Continuous total power dissipation  
Junction temperature, TJ  
Ambient temperature, TA  
Storage temperature, Tstg  
Indefinite  
PDISS  
See Thermal Information  
–55  
–40  
–55  
150  
125  
150  
°C  
°C  
°C  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
6.2 ESD Ratings  
VALUE  
±2000  
±750  
UNIT  
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)  
Charged device model (CDM), per JEDEC specification JESD22-C101(2)  
V(ESD)  
Electrostatic discharge  
V
(1) JEDEC document JEP155 states that 2-kV HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 500-V CDM allows safe manufacturing with a standard ESD control process.  
6.3 Recommended Operating Conditions  
over operating junction temperature range (unless otherwise noted)  
MIN  
2.7  
1.2  
0
NOM  
MAX  
UNIT  
VIN  
Input voltage  
30  
6.5  
V
V
VOUT  
IOUT  
VEN  
CIN  
Output voltage  
Output current  
150  
6.5  
mA  
V
Enable voltage  
0
Input capacitor  
1
µF  
µF  
°C  
COUT  
TJ  
Output capacitor  
Operating junction temperature  
2
2.2  
47  
–40  
125  
6.4 Thermal Information  
TPS709-Q1  
THERMAL METRIC(1)  
DBV (SOT-23)  
5 PINS  
210.9  
DRV (WSON)  
6 PINS  
73.1  
UNIT  
RθJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
127.4  
97.0  
39.4  
42.6  
ψJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
16.8  
2.9  
ψJB  
38.4  
42.9  
RθJC(bot)  
N/A  
12.8  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
Copyright © 2013–2018, Texas Instruments Incorporated  
5
 
TPS709-Q1  
ZHCSC15C DECEMBER 2013REVISED JUNE 2018  
www.ti.com.cn  
6.5 Electrical Characteristics  
At –40°C TJ, TA 125°C, VIN = VOUT(nom) + 1 V or 2.7 V (whichever is greater), IOUT = 1 mA, VEN = 2 V, and CIN = COUT = 2.2-  
μF ceramic, unless otherwise noted. Typical values are at TJ = 25°C.  
PARAMETER  
TEST CONDITIONS  
MIN  
2.7  
TYP  
MAX  
30  
UNIT  
V
VIN  
Input voltage range  
Output voltage range  
VOUT  
1.2  
6.5  
2%  
1%  
10  
V
VOUT < 3.3 V  
OUT 3.3 V  
–2%  
–1%  
VOUT  
DC output accuracy  
V
Line regulation  
Load regulation  
(VOUT(nom) + 1 V, 2.7 V) VIN 30 V  
3
mV  
mV  
ΔVOUT  
VIN = VOUT(nom) + 1.5 V or 3 V (whichever is  
greater), 100 µA IOUT 150 mA  
20  
50  
TPS70933-Q1, IOUT = 50 mA  
TPS70933-Q1, IOUT = 150 mA  
TPS70950-Q1, IOUT = 50 mA  
TPS70950-Q1, IOUT = 150 mA  
VOUT = 0.9 × VOUT(nom)  
295  
975  
245  
690  
320  
1.3  
1.4  
6.7  
350  
150  
80  
650  
1540  
500  
1200  
500  
2.55  
2.7  
VDO  
Dropout voltage(1)(2)  
Output current limit(3)  
Ground pin current  
Shutdown current  
mV  
mA  
µA  
ICL  
200  
IOUT = 0 mA, VOUT 3.3 V  
IOUT = 0 mA, VOUT > 3.3 V  
IOUT = 100 μA, VIN = 30 V  
IOUT = 150 mA  
IGND  
10  
ISHDN  
VEN 0.4 V, VIN = 2.7 V  
nA  
dB  
f = 10 Hz  
PSRR  
Power-supply rejection ratio f = 100 Hz  
f = 1 kHz  
62  
52  
BW = 10 Hz to 100 kHz, IOUT = 10 mA,  
VIN = 2.7 V, VOUT = 1.2 V  
Vn  
Output noise voltage  
190  
μVRMS  
VEN(HI)  
VEN(LO)  
IEN  
Enable pin high (enabled)  
Enable pin high (disabled)  
Enable pin current  
0.9  
0
V
V
0.4  
EN = 1.0 V, VIN = 5.5 V  
300  
10  
nA  
Reverse current  
(flowing out of IN pin)  
VOUT = 3 V, VIN = VEN = 0 V  
nA  
nA  
IREV  
Reverse current  
(flowing into OUT pin)  
VOUT = 3 V, VIN = VEN = 0 V  
100  
Shutdown, temperature increasing  
Reset, temperature decreasing  
158  
140  
Thermal shutdown  
temperature  
TSD  
TJ  
°C  
°C  
Operating junction  
temperature  
–40  
125  
(1) VDO is measured with VIN = 0.98 × VOUT(nom)  
.
(2) Dropout is only valid when VOUT 2.8 V because of the minimum input voltage limits.  
(3) Measured with VIN = VOUT + 3 V for VOUT 2.5 V. Measured with VIN = VOUT + 2.5 V for VOUT > 2.5 V.  
6.6 Timing Requirements  
At TJ = –40°C to 125°C, VIN = VOUT(nom) + 1 V or 2.7 V (whichever is greater), RL = 47 Ω, VEN = 2 V, and CIN = COUT = 2.2-μF  
ceramic, unless otherwise noted. Typical values are at TJ = 25°C.  
MIN  
NOM  
200  
MAX  
600  
UNIT  
µs  
V
OUT(nom) 3.3 V  
tSTR  
Start-up time(1)  
VOUT(nom) > 3.3 V  
500  
1500  
µs  
(1) Startup time = time from EN assertion to 0.95 × VOUT(nom) and load = 47 Ω.  
6
Copyright © 2013–2018, Texas Instruments Incorporated  
TPS709-Q1  
www.ti.com.cn  
ZHCSC15C DECEMBER 2013REVISED JUNE 2018  
6.7 Typical Characteristics  
Over operating temperature range (TJ = –40°C to 125°C), IOUT = 10 mA, VEN = 2 V, COUT = 2.2 μF, and VIN = VOUT(nom) + 1 V  
or 2.7 V (whichever is greater), unless otherwise noted. Typical values are at TJ = 25°C.  
1.203  
1.202  
1.201  
1.2  
3.305  
3.3025  
3.3  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
3.2975  
3.295  
3.2925  
1.199  
1.198  
0
6
12  
18  
24  
30  
5
10  
15  
20  
25  
30  
Input Voltage (V)  
Input Voltage (V)  
Figure 1. 1.2-V Line Regulation vs VIN and Temperature  
Figure 2. 3.3-V Line Regulation vs VIN and Temperature  
1.204  
6.507  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
1.2  
1.196  
1.192  
1.188  
1.184  
6.504  
6.501  
6.498  
6.495  
6.492  
5
10  
15  
20  
25  
30  
0
30  
60  
90  
120  
150  
Input Voltage (V)  
Output Current (mA)  
Figure 3. 6.5-V Line Regulation vs VIN and Temperature  
Figure 4. 1.2-V Load Regulation vs IOUT and Temperature  
3.306  
6.5  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
TJ = 125èC  
TJ = 85èC  
6.495  
TJ = 25èC  
3.3  
3.294  
3.288  
3.282  
3.276  
TJ = -40èC  
6.49  
6.485  
6.48  
6.475  
6.47  
0
30  
60  
90  
120  
150  
0
30  
60  
90  
120  
150  
Output Current (mA)  
Output Current (mA)  
Figure 5. 3.3-V Load Regulation vs IOUT and Temperature  
Figure 6. 6.5-V Load Regulation vs IOUT and Temperature  
Copyright © 2013–2018, Texas Instruments Incorporated  
7
TPS709-Q1  
ZHCSC15C DECEMBER 2013REVISED JUNE 2018  
www.ti.com.cn  
Typical Characteristics (continued)  
Over operating temperature range (TJ = –40°C to 125°C), IOUT = 10 mA, VEN = 2 V, COUT = 2.2 μF, and VIN = VOUT(nom) + 1 V  
or 2.7 V (whichever is greater), unless otherwise noted. Typical values are at TJ = 25°C.  
2400  
2000  
1600  
1200  
800  
1.204  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
IOUT = 10 mA  
IOUT = 150 mA  
1.2  
1.196  
1.192  
1.188  
1.184  
400  
2.4  
3.2  
4
4.8  
5.6  
6.4  
-50  
0
50  
100  
150  
Input Voltage (V)  
Input Voltage (V)  
Figure 8. 6.5-V Dropout Voltage vs VIN and Temperature  
Figure 7. 1.2-V Output Voltage vs Temperature  
1500  
1200  
900  
600  
300  
0
1000  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
800  
TJ = -40èC  
600  
400  
200  
0
0
30  
60  
90  
120  
150  
0
30  
60  
90  
120  
150  
Output Current (mA)  
Output Current (mA)  
Figure 9. 3.3-V Dropout Voltage vs IOUT and Temperature  
Figure 10. Dropout Voltage vs IOUT and Temperature  
540  
480  
TJ = 125èC  
TJ = 85èC  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
TJ = 25èC  
480  
440  
400  
360  
320  
280  
TJ = -40èC  
420  
360  
300  
240  
3.5  
4
4.5  
5
5.5  
6
6.5  
4.8  
5.4  
6
6.6  
7.2  
7.8  
8.4  
Input Voltage (V)  
Input Voltage (V)  
Figure 11. 1.2-V Current Limit vs VIN and Temperature  
Figure 12. 3.3-V Current Limit vs VIN and Temperature  
8
Copyright © 2013–2018, Texas Instruments Incorporated  
TPS709-Q1  
www.ti.com.cn  
ZHCSC15C DECEMBER 2013REVISED JUNE 2018  
Typical Characteristics (continued)  
Over operating temperature range (TJ = –40°C to 125°C), IOUT = 10 mA, VEN = 2 V, COUT = 2.2 μF, and VIN = VOUT(nom) + 1 V  
or 2.7 V (whichever is greater), unless otherwise noted. Typical values are at TJ = 25°C.  
3.5  
520  
480  
440  
400  
360  
320  
280  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
3
2.5  
2
1.5  
1
0.5  
8.5  
9
9.5  
10  
10.5  
11  
11.5  
0
5
0
5
10  
15  
20  
25  
30  
Input Voltage (V)  
Input Voltage (V)  
Figure 13. 6.5-V Current Limit vs VIN and Temperature  
Figure 14. 1.2-V Ground Pin Current vs VIN and  
Temperature  
3.5  
3.5  
3
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
3
2.5  
2
2.5  
2
1.5  
1
1.5  
1
0.5  
0.5  
0
5
10  
15  
20  
25  
30  
10  
15  
20  
25  
30  
Input Voltage (V)  
Input Voltage (V)  
Figure 15. 3.3-V Ground Pin Current vs VIN and  
Temperature  
Figure 16. 6.5-V Ground Pin Current vs VIN and  
Temperature  
4
3.5  
3
750  
600  
450  
300  
150  
0
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
2.5  
2
1.5  
1
0
5
10  
15  
20  
25  
30  
30  
60  
90  
120  
150  
Input Voltage (V)  
Output Current  
Figure 17. 3.3-V Ground Current vs VIN and  
Temperature with EN Floating  
Figure 18. 1.2-V Ground Pin Current vs IOUT and  
Temperature  
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Typical Characteristics (continued)  
Over operating temperature range (TJ = –40°C to 125°C), IOUT = 10 mA, VEN = 2 V, COUT = 2.2 μF, and VIN = VOUT(nom) + 1 V  
or 2.7 V (whichever is greater), unless otherwise noted. Typical values are at TJ = 25°C.  
750  
600  
450  
300  
150  
0
750  
600  
450  
300  
150  
0
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
0
30  
60  
90  
120  
150  
0
30  
60  
90  
120  
150  
Output Current  
Output Current  
Figure 19. 3.3-V Ground Pin Current vs IOUT and  
Temperature  
Figure 20. 6.5-V Ground Pin Current vs IOUT and  
Temperature  
0.9  
0.75  
0.6  
0.9  
0.75  
0.6  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
TJ = 125èC  
TJ = 85èC  
TJ = 25èC  
TJ = -40èC  
0.45  
0.3  
0.45  
0.3  
0.15  
0
0.15  
0
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
Input Voltage (V)  
Input Voltage (V)  
Figure 21. 1.2-V Shutdown Current vs VIN and Temperature  
Figure 22. 3.3-V Shutdown Current vs VIN and Temperature  
0.9  
600  
TJ = 125èC  
TJ = 85èC  
1.2V Output  
3.3V Output  
6.5V Output  
0.75  
500  
TJ = 25èC  
TJ = -40èC  
0.6  
400  
300  
200  
100  
0
0.45  
0.3  
0.15  
0
5
10  
15  
20  
25  
30  
-50  
0
50  
100  
150  
Input Voltage (V)  
Temperature (èC)  
Figure 23. 6.5-V Shutdown Current vs VIN and Temperature  
Figure 24. Start-Up Time vs Temperature  
10  
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Typical Characteristics (continued)  
Over operating temperature range (TJ = –40°C to 125°C), IOUT = 10 mA, VEN = 2 V, COUT = 2.2 μF, and VIN = VOUT(nom) + 1 V  
or 2.7 V (whichever is greater), unless otherwise noted. Typical values are at TJ = 25°C.  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
7
6.5  
6
5.5  
5
4.5  
4
3.5  
3
2.5  
2
1.5  
1
0.5  
0
1E+1  
1E+2  
1E+3  
1E+4  
1E+5  
1E+6  
1E+7  
1E+1  
1E+2  
1E+3  
1E+4  
1E+5  
Frequency (Hz)  
Frequency (Hz)  
Figure 25. Power-Supply Rejection Ratio vs Frequency  
Figure 26. Noise  
Channel 2  
(200 mV / div)  
Channel 2  
(200 mV / div)  
Channel 4  
(50 mA / div)  
Channel 4  
(100 mA / div)  
Time (100 ms / div)  
Time (500 ms / div)  
Channel 2 = VOUT, channel 4 = IOUT, VIN = 2.7 V  
Channel 2 = VOUT, channel 4 = IOUT, VIN = 2.7 V  
Figure 27. TPS70912-Q1 Load Transient (0 mA to 50 mA)  
Figure 28. TPS70912-Q1 Load Transient (1 mA to 150 mA)  
Channel 2  
(200 mV / div)  
Channel 2  
(200 mV / div)  
Channel 4  
(50 mA / div)  
Channel 4  
(100 mA / div)  
Time (10 ms / div)  
Time (100 ms / div)  
Channel 2 = VOUT, channel 4 = IOUT, VIN = 2.7 V  
Channel 2 = VOUT, channel 4 = IOUT, VIN = 2.7 V  
Figure 29. TPS70912-Q1 Load Transient (50 mA to 0 mA)  
Figure 30. TPS70912-Q1 Load Transient (50 mA to 150 mA)  
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Typical Characteristics (continued)  
Over operating temperature range (TJ = –40°C to 125°C), IOUT = 10 mA, VEN = 2 V, COUT = 2.2 μF, and VIN = VOUT(nom) + 1 V  
or 2.7 V (whichever is greater), unless otherwise noted. Typical values are at TJ = 25°C.  
Channel 2  
(200 mV / div)  
Channel 2  
(200 mV / div)  
Channel 4  
(50 mA / div)  
Channel 4  
(100 mA / div)  
Time (100 ms / div)  
Time (500 ms / div)  
Channel 2 = VOUT, channel 4 = IOUT, VIN = 4.3 V  
Channel 2 = VOUT, channel 4 = IOUT, VIN = 4.3 V  
Figure 31. TPS70933-Q1 Load Transient (0 mA to 50 mA)  
Figure 32. TPS70933-Q1 Load Transient (1 mA to 150 mA)  
Channel 2  
(200 mV / div)  
Channel 2  
(200 mV / div)  
Channel 4  
(50 mA / div)  
Channel 4  
(50 mA / div)  
Time (10 ms / div)  
Time (500 ms / div)  
Channel 2 = VOUT, channel 4 = IOUT, VIN = 4.3 V  
Channel 2 = VOUT, channel 4 = IOUT, VIN = 4.3 V  
Figure 33. TPS70933-Q1 Load Transient (50 mA to 0 mA)  
Figure 34. TPS70933-Q1 Load Transient (50 mA to 150 mA)  
Channel 2  
(50 mV / div)  
Channel 2  
(50 mV / div)  
Channel 4  
(2 V / div)  
Channel 4  
(2 V / div)  
Time (50 ms / div)  
Time (50 ms / div)  
Channel 2 = VOUT, channel 4 = VIN, IOUT = 10 mA  
Channel 2 = VOUT, channel 4 = VIN, IOUT = 50 mA  
Figure 35. TPS70912-Q1 Line Transient (2.7 V to 3.7 V)  
Figure 36. TPS70912-Q1 Line Transient (2.7 V to 3.7 V)  
12  
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Typical Characteristics (continued)  
Over operating temperature range (TJ = –40°C to 125°C), IOUT = 10 mA, VEN = 2 V, COUT = 2.2 μF, and VIN = VOUT(nom) + 1 V  
or 2.7 V (whichever is greater), unless otherwise noted. Typical values are at TJ = 25°C.  
Channel 2  
(50 mV / div)  
Channel 2  
(50 mV / div)  
Channel 4  
(2 V / div)  
Channel 4  
(2 V / div)  
Time (50 ms / div)  
Time (50 ms / div)  
Channel 2 = VOUT, channel 4 = VIN, IOUT = 10 mA  
Channel 2 = VOUT, channel 4 = VIN, IOUT = 50 mA  
Figure 37. TPS70933-Q1 Line Transient (4.3 V to 5.3 V)  
Figure 38. TPS70933-Q1 Line Transient (4.3 V to 5.3 V)  
Channel 2  
(1 V / div)  
Channel 2  
(1 V / div)  
Channel 1  
(500 mV / div)  
Channel 1  
(1 V / div)  
Time (50 ms / div)  
Time (500 ms / div)  
Channel 1 = EN, channel 2 = VOUT, VIN = 4.3 V, COUT = 2.2 µF,  
TPS70633  
Channel 1 = VIN, channel 2 = VOUT, IOUT = 3 mA, TPS70633  
Figure 39. Power-Up with Enable  
Figure 40. Power-Up and Power-Down Response  
Channel 2  
(1 V / div)  
Channel 1  
(1 V / div)  
Time (500 ms / div)  
Channel 1 = VIN, channel 2 = VOUT, IOUT = 150 mA, TPS70633  
Figure 41. Power-Up and Power-Down Response  
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7 Detailed Description  
7.1 Overview  
The TPS709-Q1 series are ultralow quiescent current, low-dropout (LDO) linear regulators. The TPS709-Q1  
offers reverse current protection to block any discharge current from the output into the input. The TPS709-Q1  
also features current limit and thermal shutdown for reliable operation.  
7.2 Functional Block Diagram  
IN  
OUT  
Current  
Limit  
Thermal  
Shutdown  
Bandgap  
EN  
Logic  
Device  
GND  
7.3 Feature Description  
7.3.1 Undervoltage Lockout (UVLO)  
The TPS709-Q1 uses an undervoltage lockout (UVLO) circuit to keep the output shut off until the internal circuitry  
operates properly.  
7.3.2 Shutdown  
The enable pin (EN) is active high. Enable the device by forcing the EN pin to exceed VEN(HI) (0.9 V, minimum).  
Turn off the device by forcing the EN pin to drop below 0.4 V.  
7.3.3 Reverse Current Protection  
The TPS709-Q1 has integrated reverse current protection. Reverse current protection prevents the flow of  
current from the OUT pin to the IN pin when output voltage is higher than input voltage. The reverse current  
protection circuitry places the power path in high impedance when the output voltage is higher than the input  
voltage. This setting reduces leakage current from the output to the input to 10 nA, typical. The reverse current  
protection is always active regardless of the enable pin logic state or if the OUT pin voltage is greater than 1.8 V.  
Reverse current can flow if the output voltage is less than 1.8 V and if input voltage is less than the output  
voltage.  
If voltage is applied to the input pin, then the maximum voltage that can be applied to the OUT pin is the lower of  
three times the nominal output voltage or 6.5 V. For example, if the 1.2-V output voltage version is used, then the  
maximum reverse bias voltage that can be applied to the OUT pin is 3.6 V. If the 3.3-V output voltage version is  
used, then the maximum reverse bias voltage that can be applied to the OUT pin is 6.5 V.  
14  
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Feature Description (continued)  
7.3.4 Internal Current Limit  
The TPS709-Q1 internal current limit helps protect the regulator during fault conditions. During current limit, the  
output sources a fixed amount of current that is largely independent of output voltage. In such a case, the output  
voltage is not regulated, and can be measured as (VOUT = ILIMIT × RLOAD). The PMOS pass transistor dissipates  
[(VIN – VOUT) × ILIMIT] until a thermal shutdown is triggered and the device turns off. When cool, the device is  
turned on by the internal thermal shutdown circuit. If the fault condition continues, the device cycles between  
current limit and thermal shutdown; see the Thermal Information section for more details.  
The TPS709-Q1 is characterized over the recommended operating output current range up to 150 mA. The  
internal current limit begins to limit the output current at a minimum of 200 mA of output current.  
7.3.5 Thermal Protection  
Thermal protection disables the output when the junction temperature rises to approximately 158°C, allowing the  
device to cool. When the junction temperature cools to approximately 140°C, the output circuitry is again  
enabled. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection  
circuit can cycle on and off. This cycling limits the dissipation of the regulator, protecting it from damage as a  
result of overheating.  
Any tendency to activate the thermal protection circuit indicates excessive power dissipation or an inadequate  
heatsink. For reliable operation, limit junction temperature to 125°C, maximum. To estimate the margin of safety  
in a complete design (including heatsink), increase the ambient temperature until the thermal protection is  
triggered; use worst-case loads and signal conditions. For good reliability, thermal protection must trigger at least  
35°C above the maximum expected ambient condition of the particular application. This configuration produces a  
worst-case junction temperature of 125°C at the highest expected ambient temperature and worst-case load.  
The TPS709-Q1 internal protection circuitry is designed to protect against overload conditions. This circuitry is  
not intended to replace proper heatsinking. Continuously running the TPS709-Q1 into thermal shutdown  
degrades device reliability.  
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7.4 Device Functional Modes  
7.4.1 Normal Operation  
The device regulates to the nominal output voltage under the following conditions:  
The input voltage is at least as high as VIN(min)  
The input voltage is greater than the nominal output voltage added to the dropout voltage.  
The enable voltage has previously exceeded the enable rising threshold voltage and has not decreased  
below the enable falling threshold.  
.
The output current is less than the current limit.  
The device junction temperature is less than the maximum specified junction temperature.  
7.4.2 Dropout Operation  
If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other  
conditions are met for normal operation, the device operates in dropout mode. In this mode of operation, the  
output voltage is the same as the input voltage minus the dropout voltage. The transient performance of the  
device is significantly degraded because the pass device is in the linear region and no longer controls the current  
through the LDO. Line or load transients in dropout can result in large output voltage deviations.  
7.4.3 Disabled  
The device is disabled under the following conditions:  
The enable voltage is less than the enable falling threshold voltage or has not yet exceeded the enable rising  
threshold.  
The device junction temperature is greater than the thermal shutdown temperature.  
Table 1 shows the conditions that lead to the different modes of operation.  
Table 1. Device Functional Mode Comparison  
PARAMETER  
OPERATING MODE  
VIN  
VEN  
IOUT  
IOUT < ILIM  
TJ  
VIN > VOUT(nom) + VDO and  
VIN > VIN(min)  
Normal mode  
Dropout mode  
VEN > VEN(HI)  
VEN > VEN(HI)  
TJ < 125°C  
TJ < 125°C  
VIN(min) < VIN < VOUT(nom) + VDO  
Disabled mode  
(any true condition disables the  
device)  
VEN < VEN(low)  
TJ > 158°C  
16  
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8 Application and Implementation  
NOTE  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
8.1 Application Information  
The TPS709-Q1 consumes low quiescent current and delivers excellent line and load transient performance.  
This performance, combined with low noise and good PSRR with little (VIN – VOUT) headroom, makes these  
devices ideal for RF portable applications, current limit, and thermal protection. The TPS709-Q1 devices are  
specified from –40°C to 125°C.  
8.1.1 Input and Output Capacitor Considerations  
The TPS709-Q1 devices are stable with output capacitors with an effective capacitance of 2.0 μF or greater for  
output voltages below 1.5 V. For output voltages equal or greater than 1.5 V, the minimum effective capacitance  
for stability is 1.5 µF. The maximum capacitance for stability is 47 µF. The equivalent series resistance (ESR) of  
the output capacitor must be between 0 Ω and 0.2 Ω for stability.  
The effective capacitance is the minimum capacitance value of a capacitor after taking into account variations  
resulting from tolerances, temperature, and dc bias effects. X5R- and X7R-type ceramic capacitors are  
recommended because these capacitors have minimal variation in value and ESR over temperature.  
Although an input capacitor is not required for stability, good analog design practice is to connect a 0.1-µF to  
2.2-µF capacitor from IN to GND. This capacitor counteracts reactive input sources and improves transient  
response, input ripple rejection, and PSRR.  
8.1.2 Dropout Voltage  
The TPS709-Q1 uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the  
dropout voltage (VDO), the PMOS pass device is in the linear region of operation and the input-to-output  
resistance is the RDS(ON) of the PMOS pass element. VDO approximately scales with the output current because  
the PMOS device functions like a resistor in dropout.  
The ground pin current of many linear voltage regulators increases substantially when the device is operated in  
dropout. This increase in ground pin current while operating in dropout can be several orders of magnitude larger  
than when the device is not in dropout. The TPS709-Q1 employs a special control loop that limits the increase in  
ground pin current while operating in dropout. This functionality allows for the most efficient operation while in  
dropout conditions that can greatly increase battery run times.  
8.1.3 Transient Response  
As with any regulator, increasing the output capacitor size reduces over- and undershoot magnitude, but  
increases transient response duration.  
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8.2 Typical Application  
VO  
VI  
IN  
OUT  
NC  
1 µF  
2.2 µF  
GND  
EN  
TPS70933-Q1  
Figure 42. 3.3-V, Low-IQ Rail  
8.2.1 Design Requirements  
Table 2 summarizes the design requirements for Figure 42.  
Table 2. Design Requirements for a 3.3-V, Low-IQ Rail Application  
PARAMETER  
VIN  
DESIGN SPECIFICATION  
4.3 V  
3.3 V  
VOUT  
I(IN) (no load)  
IOUT (max)  
< 5 µA  
150 mA  
8.2.2 Detailed Design Procedure  
Select a 2.2-µF, 10-V X7R output capacitor to satisfy the minimum output capacitance requirement with a 3.3-V  
dc bias.  
Select a 1.0-µF, 10-V X7R input capacitor to provide input noise filtering and eliminate high-frequency voltage  
transients.  
8.2.3 Application Curves  
Channel 2  
(200 mV / div)  
Channel 2  
(1 V / div)  
Channel 1  
(500 mV / div)  
Channel 4  
(50 mA / div)  
Time (500 ms / div)  
Time (50 ms / div)  
Channel 2 = VOUT, channel 4 = IOUT, VIN = 4.3 V  
Channel 1 = EN, channel 2 = VOUT, VIN = 4.3 V, COUT = 2.2 µF,  
TPS70933-Q1  
Figure 44. Power-Up with Enable  
Figure 43. TPS70933-Q1 Load Transient (50 mA to 150 mA)  
9 Power Supply Recommendations  
This device is designed to operate with an input supply range of 2.7 V to 30 V. The input voltage range must  
provide adequate headroom in order for the device to have a regulated output. This input supply must be well-  
regulated and stable. If the input supply is noisy, additional input capacitors with low ESR can help improve the  
output noise performance.  
18  
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10 Layout  
10.1 Layout Guidelines  
10.1.1 Board Layout Recommendations to Improve PSRR and Noise Performance  
Input and output capacitors must be placed as close to the device pins as possible. To improve ac performance  
(such as PSRR, output noise, and transient response), TI recommends that the board be designed with separate  
ground planes for VIN and VOUT, with the ground plane connected only at the device GND pin. In addition, the  
output capacitor ground connection must be connected directly to the device GND pin. High ESR capacitors may  
degrade PSRR performance.  
10.1.2 Power Dissipation  
The ability to remove heat from the die is different for each package type, presenting different considerations in  
the printed circuit board (PCB) layout. The PCB area around the device that is free of other components moves  
the heat from the device to the ambient air. Performance data for JEDEC low- and high-K boards are given in the  
Thermal Information. Using heavier copper increases the effectiveness in removing heat from the device. The  
addition of plated through-holes to heat-dissipating layers also improves the heatsink effectiveness.  
Power dissipation depends on input voltage and load conditions. Power dissipation (PD) can be approximated by  
the product of the output current times the voltage drop across the output pass element (VIN to VOUT), as shown  
in Equation 1.  
PD = (VIN – VOUT) × IOUT  
(1)  
Figure 45 shows the maximum ambient temperature versus the power dissipation of the TPS709-Q1. This figure  
assumes the device is soldered on a JEDEC standard, high-K layout with no airflow over the board. Actual board  
thermal impedances vary widely. If the application requires high power dissipation, having a thorough  
understanding of the board temperature and thermal impedances is helpful to ensure the TPS709-Q1 does not  
operate above a junction temperature of 125°C.  
125  
DBV Package  
DRV Package  
100  
75  
50  
25  
0
0.25  
0.5  
0.75  
1
1.2  
Power Dissipation (W)  
Figure 45. Maximum Ambient Temperature vs Device Power Dissipation  
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Layout Guidelines (continued)  
Estimating the junction temperature can be done by using the thermal metrics ΨJT and ΨJB, shown in the Thermal  
Information. These metrics are a more accurate representation of the heat transfer characteristics of the die and  
the package than RθJA. The junction temperature can be estimated with Equation 2.  
YJT: TJ = TT + YJT · PD  
YJB: TJ = TB + YJB · PD  
where:  
PD is the power dissipation shown by Equation 1,  
TT is the temperature at the center-top of the IC package,  
TB is the PCB temperature measured 1 mm away from the IC package on the PCB surface.  
(2)  
NOTE  
Both TT and TB can be measured on actual application boards using a thermo-gun (an  
infrared thermometer).  
For more information about measuring TT and TB, see the application note Using New Thermal Metrics  
(SBVA025), available for download at www.ti.com.  
20  
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10.2 Layout Examples  
Input Capacitor  
Input  
Trace  
Enable  
Trace  
Grounded  
Thermal Plane  
NC  
EN  
Input Ground  
Plane  
IN  
Thermal Pad  
GND  
NC  
Output Trace  
OUT  
Grounded  
Thermal Plane  
Output Ground  
Plane  
Output Capacitor  
Designates thermal vias.  
Figure 46. WSON Layout Example  
VOUT  
VIN  
OUT  
IN  
CIN  
COUT  
GND  
EN  
NC  
GND PLANE  
Represents via used for application-specific connections.  
Figure 47. SOT23-5 Layout Example  
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11 器件和文档支持  
11.1 器件支持  
11.1.1 开发支持  
11.1.1.1 评估模块  
评估模块 (EVM) 可与 TPS709-Q1 配套使用,帮助评估初始电路性能。TPS70933EVM-110 评估模块(和相关的  
用户指南)可在德州仪器 (TI) 网站上的产品文件夹中获取,也可直接从 TI 网上商店购买。  
11.1.1.2 Spice 模型  
分析模拟电路和系统的性能时,使用 SPICE 模型对电路性能进行计算机仿真非常有用。您可以从产品文件夹中的  
仿真模型下获取 TPS709 SPICE 模型。  
11.1.2 器件命名规则  
3. 器件命名规则(1)  
产品  
VOUT  
TPS709xx(x)yyyz-Q1  
XX(X) 是标称输出电压。对于分辨率为 100mV 的输出电压,订货编号中使用两位数字;否  
则,使用三位数字(例如,28 = 2.8V125 = 1.25V)。  
YYY 为封装标识符。  
Z 为卷带数量(R = 3000T = 250)。  
(1) 要获得最新的封装和订货信息,请参阅本文档末尾的封装选项附录,或者登录 TI 的网站 www.ti.com.cn进行查询。  
11.2 文档支持  
11.2.1 相关文档  
请参阅如下相关文档:  
TPS70933EVM-110 评估模块用户指南》  
11.3 接收文档更新通知  
要接收文档更新通知,请导航至 TI.com.cn 上的器件产品文件夹。单击右上角的通知我 进行注册,即可每周接收产  
品信息更改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。  
11.4 社区资源  
下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商按照原样提供。这些内容并不构成 TI 技术规范,  
并且不一定反映 TI 的观点;请参阅 TI 《使用条款》。  
TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在  
e2e.ti.com 中,您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。  
设计支持  
TI 参考设计支持 可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。  
11.5 商标  
E2E is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
11.6 静电放电警告  
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可  
能会损坏集成电路。  
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可  
能会导致器件与其发布的规格不相符。  
22  
版权 © 2013–2018, Texas Instruments Incorporated  
TPS709-Q1  
www.ti.com.cn  
ZHCSC15C DECEMBER 2013REVISED JUNE 2018  
11.7 术语表  
SLYZ022 TI 术语表。  
这份术语表列出并解释术语、缩写和定义。  
12 机械、封装和可订购信息  
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更,恕不另行通知,且  
不会对此文档进行修订。如需获取此数据表的浏览器版本,请参阅左侧的导航栏。  
版权 © 2013–2018, Texas Instruments Incorporated  
23  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
TPS70912QDBVRQ1  
TPS70912QDRVRQ1  
TPS70915QDRVRQ1  
TPS70918QDBVRQ1  
TPS70918QDRVRQ1  
TPS70925QDBVRQ1  
TPS70925QDRVRQ1  
TPS70927QDRVRQ1  
TPS70928QDBVRQ1  
TPS70928QDRVRQ1  
TPS70930QDBVRQ1  
TPS70930QDRVRQ1  
TPS70933QDBVRQ1  
TPS70933QDRVRQ1  
TPS70936QDBVRQ1  
TPS70950QDBVRQ1  
TPS70950QDRVRQ1  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
SOT-23  
WSON  
WSON  
SOT-23  
WSON  
SOT-23  
WSON  
WSON  
SOT-23  
WSON  
SOT-23  
WSON  
SOT-23  
WSON  
SOT-23  
SOT-23  
WSON  
DBV  
DRV  
DRV  
DBV  
DRV  
DBV  
DRV  
DRV  
DBV  
DRV  
DBV  
DRV  
DBV  
DRV  
DBV  
DBV  
DRV  
5
6
6
5
6
5
6
6
5
6
5
6
5
6
5
5
6
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
NIPDAU  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
SLR  
SJD  
SJE  
SLS  
SJF  
SLT  
SJG  
SJH  
SLU  
SJI  
NIPDAUAG  
NIPDAUAG  
NIPDAU  
NIPDAUAG  
NIPDAU  
NIPDAUAG  
NIPDAUAG  
NIPDAU  
NIPDAUAG  
NIPDAU  
SLV  
SJJ  
NIPDAUAG  
NIPDAU  
SLJ  
SJK  
SLW  
SLX  
SJL  
NIPDAUAG  
NIPDAU  
NIPDAU  
NIPDAUAG  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
26-Dec-2020  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TPS70912QDBVRQ1  
TPS70912QDRVRQ1  
TPS70915QDRVRQ1  
TPS70918QDBVRQ1  
TPS70918QDRVRQ1  
TPS70925QDBVRQ1  
TPS70925QDRVRQ1  
TPS70927QDRVRQ1  
TPS70928QDBVRQ1  
TPS70928QDRVRQ1  
TPS70930QDBVRQ1  
TPS70930QDRVRQ1  
TPS70933QDBVRQ1  
TPS70933QDRVRQ1  
TPS70936QDBVRQ1  
TPS70950QDBVRQ1  
TPS70950QDRVRQ1  
SOT-23  
WSON  
WSON  
SOT-23  
WSON  
SOT-23  
WSON  
WSON  
SOT-23  
WSON  
SOT-23  
WSON  
SOT-23  
WSON  
SOT-23  
SOT-23  
WSON  
DBV  
DRV  
DRV  
DBV  
DRV  
DBV  
DRV  
DRV  
DBV  
DRV  
DBV  
DRV  
DBV  
DRV  
DBV  
DBV  
DRV  
5
6
6
5
6
5
6
6
5
6
5
6
5
6
5
5
6
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
178.0  
179.0  
179.0  
178.0  
179.0  
178.0  
179.0  
179.0  
178.0  
179.0  
178.0  
179.0  
178.0  
179.0  
178.0  
178.0  
179.0  
9.0  
8.4  
8.4  
9.0  
8.4  
9.0  
8.4  
8.4  
9.0  
8.4  
9.0  
8.4  
9.0  
8.4  
9.0  
9.0  
8.4  
3.23  
2.2  
3.17  
2.2  
1.37  
1.2  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
4.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
Q3  
Q2  
Q2  
Q3  
Q2  
Q3  
Q2  
Q2  
Q3  
Q2  
Q3  
Q2  
Q3  
Q2  
Q3  
Q3  
Q2  
2.2  
2.2  
1.2  
3.23  
2.2  
3.17  
2.2  
1.37  
1.2  
3.23  
2.2  
3.17  
2.2  
1.37  
1.2  
2.2  
2.2  
1.2  
3.23  
2.2  
3.17  
2.2  
1.37  
1.2  
3.23  
2.2  
3.17  
2.2  
1.37  
1.2  
3.23  
2.2  
3.17  
2.2  
1.37  
1.2  
3.23  
3.23  
2.2  
3.17  
3.17  
2.2  
1.37  
1.37  
1.2  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
26-Dec-2020  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TPS70912QDBVRQ1  
TPS70912QDRVRQ1  
TPS70915QDRVRQ1  
TPS70918QDBVRQ1  
TPS70918QDRVRQ1  
TPS70925QDBVRQ1  
TPS70925QDRVRQ1  
TPS70927QDRVRQ1  
TPS70928QDBVRQ1  
TPS70928QDRVRQ1  
TPS70930QDBVRQ1  
TPS70930QDRVRQ1  
TPS70933QDBVRQ1  
TPS70933QDRVRQ1  
TPS70936QDBVRQ1  
TPS70950QDBVRQ1  
TPS70950QDRVRQ1  
SOT-23  
WSON  
WSON  
SOT-23  
WSON  
SOT-23  
WSON  
WSON  
SOT-23  
WSON  
SOT-23  
WSON  
SOT-23  
WSON  
SOT-23  
SOT-23  
WSON  
DBV  
DRV  
DRV  
DBV  
DRV  
DBV  
DRV  
DRV  
DBV  
DRV  
DBV  
DRV  
DBV  
DRV  
DBV  
DBV  
DRV  
5
6
6
5
6
5
6
6
5
6
5
6
5
6
5
5
6
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
180.0  
200.0  
200.0  
180.0  
200.0  
180.0  
200.0  
200.0  
180.0  
200.0  
180.0  
200.0  
180.0  
200.0  
180.0  
180.0  
200.0  
180.0  
183.0  
183.0  
180.0  
183.0  
180.0  
183.0  
183.0  
180.0  
183.0  
180.0  
183.0  
180.0  
183.0  
180.0  
180.0  
183.0  
18.0  
25.0  
25.0  
18.0  
25.0  
18.0  
25.0  
25.0  
18.0  
25.0  
18.0  
25.0  
18.0  
25.0  
18.0  
18.0  
25.0  
Pack Materials-Page 2  
GENERIC PACKAGE VIEW  
DRV 6  
WSON - 0.8 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
Images above are just a representation of the package family, actual package may vary.  
Refer to the product data sheet for package details.  
4206925/F  
PACKAGE OUTLINE  
DRV0006D  
WSON - 0.8 mm max height  
SCALE 5.500  
PLASTIC SMALL OUTLINE - NO LEAD  
2.1  
1.9  
A
B
PIN 1 INDEX AREA  
2.1  
1.9  
0.8  
0.7  
C
SEATING PLANE  
0.08 C  
(0.2) TYP  
0.05  
0.00  
1
0.1  
EXPOSED  
THERMAL PAD  
3
4
6
2X  
7
1.3  
1.6 0.1  
1
4X 0.65  
0.35  
0.25  
6X  
PIN 1 ID  
(OPTIONAL)  
0.3  
0.2  
6X  
0.1  
C A B  
C
0.05  
4225563/A 12/2019  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DRV0006D  
WSON - 0.8 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
6X (0.45)  
6X (0.3)  
(1)  
1
7
6
SYMM  
(1.6)  
(1.1)  
4X (0.65)  
4
3
SYMM  
(1.95)  
(R0.05) TYP  
(
0.2) VIA  
TYP  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:25X  
0.07 MIN  
ALL AROUND  
0.07 MAX  
ALL AROUND  
EXPOSED  
METAL  
EXPOSED  
METAL  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
SOLDER MASK  
OPENING  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4225563/A 12/2019  
NOTES: (continued)  
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature  
number SLUA271 (www.ti.com/lit/slua271).  
5. Vias are optional depending on application, refer to device data sheet. If some or all are implemented, recommended via locations are shown.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DRV0006D  
WSON - 0.8 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
SYMM  
7
6X (0.45)  
METAL  
1
6
6X (0.3)  
(0.45)  
SYMM  
4X (0.65)  
(0.7)  
4
3
(R0.05) TYP  
(1)  
(1.95)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
EXPOSED PAD #7  
88% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE  
SCALE:30X  
4225563/A 12/2019  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
www.ti.com  
PACKAGE OUTLINE  
DBV0005A  
SOT-23 - 1.45 mm max height  
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR  
C
3.0  
2.6  
0.1 C  
1.75  
1.45  
1.45  
0.90  
B
A
PIN 1  
INDEX AREA  
1
2
5
(0.1)  
2X 0.95  
1.9  
3.05  
2.75  
1.9  
(0.15)  
4
3
0.5  
5X  
0.3  
0.15  
0.00  
(1.1)  
TYP  
0.2  
C A B  
NOTE 5  
0.25  
GAGE PLANE  
0.22  
0.08  
TYP  
8
0
TYP  
0.6  
0.3  
TYP  
SEATING PLANE  
4214839/G 03/2023  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. Refernce JEDEC MO-178.  
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed 0.25 mm per side.  
5. Support pin may differ or may not be present.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DBV0005A  
SOT-23 - 1.45 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
5X (1.1)  
1
5
5X (0.6)  
SYMM  
(1.9)  
2
3
2X (0.95)  
4
(R0.05) TYP  
(2.6)  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:15X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
EXPOSED METAL  
EXPOSED METAL  
0.07 MIN  
ARROUND  
0.07 MAX  
ARROUND  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4214839/G 03/2023  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DBV0005A  
SOT-23 - 1.45 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
5X (1.1)  
1
5
5X (0.6)  
SYMM  
(1.9)  
2
3
2X(0.95)  
4
(R0.05) TYP  
(2.6)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
SCALE:15X  
4214839/G 03/2023  
NOTES: (continued)  
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
9. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
重要声明和免责声明  
TI“按原样提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,  
不保证没有瑕疵且不做出任何明示或暗示的担保,包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担  
保。  
这些资源可供使用 TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任:(1) 针对您的应用选择合适的 TI 产品,(2) 设计、验  
证并测试您的应用,(3) 确保您的应用满足相应标准以及任何其他功能安全、信息安全、监管或其他要求。  
这些资源如有变更,恕不另行通知。TI 授权您仅可将这些资源用于研发本资源所述的 TI 产品的应用。严禁对这些资源进行其他复制或展示。  
您无权使用任何其他 TI 知识产权或任何第三方知识产权。您应全额赔偿因在这些资源的使用中对 TI 及其代表造成的任何索赔、损害、成  
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相关型号:

TPS70919DBVR

具有反向电流保护和使能功能的 150mA、30V、超低 IQ、低压降稳压器 | DBV | 5 | -40 to 125

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TPS70919DBVT

具有反向电流保护和使能功能的 150mA、30V、超低 IQ、低压降稳压器 | DBV | 5 | -40 to 125

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TPS70925DBVR

具有反向电流保护和使能功能的 150mA、30V、超低 IQ、低压降稳压器 | DBV | 5 | -40 to 125

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TPS70925DBVT

具有反向电流保护和使能功能的 150mA、30V、超低 IQ、低压降稳压器 | DBV | 5 | -40 to 125

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TPS70925DRVR

具有反向电流保护和使能功能的 150mA、30V、超低 IQ、低压降稳压器 | DRV | 6 | -40 to 125

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TPS70925DRVT

具有反向电流保护和使能功能的 150mA、30V、超低 IQ、低压降稳压器 | DRV | 6 | -40 to 125

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TPS70925QDBVRQ1

具有反向电流保护功能的汽车类 150mA、30V、超低 IQ、低压降稳压器 | DBV | 5 | -40 to 125

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TPS70925QDRVRQ1

具有反向电流保护功能的汽车类 150mA、30V、超低 IQ、低压降稳压器 | DRV | 6 | -40 to 125

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TPS70927DBVR

具有反向电流保护和使能功能的 150mA、30V、超低 IQ、低压降稳压器 | DBV | 5 | -40 to 125

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TPS70927DBVT

具有反向电流保护和使能功能的 150mA、30V、超低 IQ、低压降稳压器 | DBV | 5 | -40 to 125

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TPS70927QDRVRQ1

具有反向电流保护功能的汽车类 150mA、30V、超低 IQ、低压降稳压器 | DRV | 6 | -40 to 125

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TPS70928DBVR

具有反向电流保护和使能功能的 150mA、30V、超低 IQ、低压降稳压器 | DBV | 5 | -40 to 125

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