TPS74625PQWDRVRQ1 [TI]

具有电源正常指示功能的汽车类、1A、低 IQ、高 PSRR、低压降 (LDO) 稳压器 | DRV | 6 | -40 to 125;
TPS74625PQWDRVRQ1
型号: TPS74625PQWDRVRQ1
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

具有电源正常指示功能的汽车类、1A、低 IQ、高 PSRR、低压降 (LDO) 稳压器 | DRV | 6 | -40 to 125

稳压器
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TPS746-Q1
SBVS358B – JUNE 2018 – REVISED JANUARY 2021  
TPS746-Q1 1-A LDO With Power-Good in Small Wettable Flank WSON Packages  
1 Features  
3 Description  
AEC-Q100 qualified for automotive applications:  
Temperature grade 1: –40°C to +125°C, TA  
Device operating junction temperature range:  
– –40°C to +150°C  
The TPS746-Q1 is a 1-A, ultra-low-dropout regulator  
(LDO) with power-good functionality. This device is  
available in a small 6-pin, 2-mm × 2-mm and a small  
8-pin, 3-mm × 3-mm WSON package with wettable  
flanks to facilitate optical inspection. The TPS746-Q1  
consumes low quiescent current and provides fast line  
and load transient performance.  
Package:  
– 2-mm × 2-mm wettable flank WSON  
– 3-mm × 3-mm wettable flank WSON  
Input voltage range: 1.5 V to 6.0 V  
Output voltage range:  
– Fixed option: 0.65 V to 5.0 V  
– Adjustable option: 0.55 V to 5.5 V  
High PSRR: 38 dB at 100 kHz  
Output accuracy: ±0.85% typical, ±1.5% maximum  
Power-good output options:  
The TPS746-Q1 is a flexible device for post-regulation  
by supporting an input voltage range from 1.5 V to  
6.0 V and an externally adjustable output range of  
0.55 V to 5.5 V. The device also features fixed output  
voltages for powering common voltage rails.  
The TPS746-Q1 has a power-good (PG) output that  
monitors the voltage at the feedback pin to indicate  
the status of the output voltage. The EN input and PG  
output can be used for sequencing multiple power  
supplies in the system.  
– Open-drain or push-pull  
Ultra-low dropout:  
– 265 mV (max) at 1 A (3.3 VOUT  
Stable with a 1-µF or larger capacitor  
Low IQ: 25 µA (typical)  
Active output discharge  
Low thermal resistance:  
)
The TPS746-Q1 is stable with small ceramic output  
capacitors, allowing for a small overall solution size. A  
precision band-gap and error amplifier provides high  
accuracy of ±0.85% (max) at 25°C and ±1.5% (max)  
over temperature. This device includes integrated  
thermal shutdown, current limit, and undervoltage  
lockout (UVLO) features. The TPS746-Q1 has an  
internal foldback current limit that helps reduce the  
thermal dissipation during short-circuit events.  
– DRV (6-pin WSON), RθJA = 80.3°C/W  
– DRB (8-pin WSON), RθJA = 62.0°C/W  
2 Applications  
Device Information (1)  
Automotive head units  
Front and rear cameras  
Automotive cluster displays  
Telematics control units  
Medium, short range radar  
PART NUMBER  
PACKAGE  
BODY SIZE (NOM)  
Wettable flank  
WSON (6)  
2.00 mm × 2.00 mm  
TPS746-Q1  
Wettable flank  
WSON (8)  
3.00 mm × 3.00 mm  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
VIN  
VOUT  
VIN  
VOUT  
IN  
OUT  
FB  
IN  
OUT  
Cff  
TPS746-Q1  
RPG*  
TPS746-Q1  
CIN  
COUT  
CIN  
R1  
R2  
COUT  
EN  
RPG  
*
EN  
PG  
GND  
PG  
GND  
*Pull-up resistor not required  
for push-pull option  
*Pull-up resistor not required  
for push-pull option  
Typical Application: Fixed Voltage Version  
Typical Application: Adjustable Voltage Version  
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
TPS746-Q1  
SBVS358B – JUNE 2018 – REVISED JANUARY 2021  
www.ti.com  
Table of Contents  
1 Features............................................................................1  
2 Applications.....................................................................1  
3 Description.......................................................................1  
4 Revision History.............................................................. 2  
5 Pin Configuration and Functions...................................3  
6 Specifications.................................................................. 5  
6.1 Absolute Maximum Ratings ....................................... 5  
6.2 ESD Ratings .............................................................. 5  
6.3 Recommended Operating Conditions ........................5  
6.4 Thermal Information ...................................................6  
6.5 Electrical Characteristics ............................................6  
6.6 Timing Requirements .................................................7  
6.7 Typical Characteristics................................................8  
7 Detailed Description......................................................16  
7.1 Overview...................................................................16  
7.2 Functional Block Diagrams....................................... 16  
7.3 Feature Description...................................................18  
7.4 Device Functional Modes..........................................20  
8 Application and Implementation..................................21  
8.1 Application Information............................................. 21  
8.2 Typical Application.................................................... 28  
9 Power Supply Recommendations................................29  
10 Layout...........................................................................30  
10.1 Layout Guidelines................................................... 30  
10.2 Layout Examples.................................................... 30  
11 Device and Documentation Support..........................31  
11.1 Device Support........................................................31  
11.2 Documentation Support.......................................... 31  
11.3 Receiving Notification of Documentation Updates..31  
11.4 Support Resources................................................. 31  
11.5 Trademarks............................................................. 31  
11.6 Electrostatic Discharge Caution..............................31  
11.7 Glossary..................................................................31  
4 Revision History  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
Changes from Revision A (October 2019) to Revision B (January 2021)  
Page  
Changed DRB package from preview to production data...................................................................................1  
Added limits to ISC and tSTR in Electrical Charactertistics table.......................................................................... 5  
Changed VDO and VOL(PG) conditions to correct values in Electrical Charactertistics table............................... 5  
Changes from Revision * (June 2019) to Revision A (October 2019)  
Page  
Changed document status from APL to production data....................................................................................1  
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TPS746-Q1  
SBVS358B – JUNE 2018 – REVISED JANUARY 2021  
www.ti.com  
5 Pin Configuration and Functions  
OUT  
FB  
1
2
3
6
5
4
IN  
OUT  
NC  
1
2
3
6
5
4
IN  
Thermal  
Pad  
Thermal  
Pad  
PG  
EN  
PG  
EN  
GND  
GND  
Not to scale  
Not to scale  
Figure 5-1. DRV Package, 6-Pin Adjustable WSON,  
Top View  
Figure 5-2. DRV Package, 6-Pin Fixed WSON,  
Top View  
OUT  
NC  
1
2
3
4
8
7
6
5
IN  
OUT  
NC  
1
2
3
4
8
7
6
5
IN  
NC  
PG  
EN  
NC  
PG  
EN  
Thermal  
Pad  
Thermal  
Pad  
FB  
NC  
GND  
GND  
Not to scale  
Not to scale  
Figure 5-3. DRB Package, 8-Pin Adjustable WSON,  
Top View  
Figure 5-4. DRB Package, 8-Pin Fixed WSON,  
Top View  
Table 5-1. Pin Functions  
PIN  
DRV  
I/O  
DESCRIPTION  
DRV  
(Fixed)  
DRB  
(Fixed)  
DRB  
(Adjust)  
NAME  
(Adjust)  
Enable pin. Drive EN greater than VEN(HI) to turn on the regulator.  
EN  
4
4
5
5
Input Drive EN less than VEN(LO) to put the low-dropout regulator (LDO)  
into shutdown mode.  
This pin is used as an input to the control loop error amplifier and  
is used to set the output voltage of the LDO.  
FB  
3
2
3
4
3
4
GND  
Ground pin.  
Input pin. For best transient response and to minimize input  
impedance, use the recommended value or larger ceramic  
capacitor from IN to ground as listed in the Recommended  
Operating Conditions table and the Input and Output Capacitor  
Selection section. Place the input capacitor as close to the output  
of the device as possible.  
IN  
6
2
1
6
1
8
2, 3, 7  
1
8
2, 7  
1
Input  
No internal connection. Ground this pin for better thermal  
performance.  
NC  
OUT  
Regulated output voltage pin. A capacitor is required from OUT to  
ground for stability. For best transient response, use the nominal  
recommended value or larger ceramic capacitor from OUT to  
ground; see the Recommended Operating Conditions table and  
the Input and Output Capacitor Selection section. Place the  
output capacitor as close to the output of the device as possible.  
Output  
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SBVS358B – JUNE 2018 – REVISED JANUARY 2021  
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Table 5-1. Pin Functions (continued)  
PIN  
I/O  
DESCRIPTION  
DRV  
(Fixed)  
DRV  
(Adjust)  
DRB  
(Fixed)  
DRB  
(Adjust)  
NAME  
Power-good output. Available in open-drain and push-pull  
topologies. A pullup resistor is required for the open-drain  
version. For the open-drain version, if the power-good  
functionality is not being used, ground this pin or leave floating.  
For the push-pull version, if the power-good functionality is not  
being used, leave this pin floating.  
PG  
5
5
6
6
Output  
The thermal pad is electrically connected to the GND node.  
Connect to the GND plane for improved thermal performance.  
Thermal Pad  
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SBVS358B – JUNE 2018 – REVISED JANUARY 2021  
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6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)  
MIN  
–0.3  
–0.3  
–0.3  
–0.3  
MAX  
6.5  
UNIT  
Supply, VIN  
Enable, VEN  
6.5  
Voltage  
Feedback, VFB  
Power-good, VPG  
Output, VOUT  
2.0  
V
6.5  
–0.3 VIN + 0.3(2)  
Internally limited  
±10  
Output, IOUT  
Current  
Power-good, IPG  
Operating junction, TJ  
Storage, Tstg  
mA  
°C  
–40  
–65  
150  
150  
Temperature  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under  
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability.  
(2) The absolute maximum rating is VIN + 0.3 V or 6.0 V, whichever is smaller.  
6.2 ESD Ratings  
VALUE  
UNIT  
Human-body model (HBM), per AEC Q100-002(1)  
±2000  
Electrostatic  
discharge  
Charged-device model (CDM), per AEC Q100-011, corner  
pins  
V(ESD)  
±750  
±500  
V
Charged-device model (CDM), per AEC Q100-011, other pins  
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.  
6.3 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN  
1.5  
0.55  
0.65  
0
NOM  
MAX  
UNIT  
VIN  
Input voltage  
6.0  
5.5  
5.0  
1
V
Adjustable version  
Fixed version  
VOUT  
Output voltage  
V
IOUT  
CIN  
Output current  
A
µF  
µF  
nF  
V
Input capacitor  
1
COUT  
CFF  
VEN  
fEN  
Output capacitor(1)  
Feed-forward capacitor  
Enable voltage  
1
220  
10  
0
6.0  
10  
Enable toggle frequency  
PG voltage  
kHz  
V
VPG  
TJ  
0
6.0  
150  
Junction temperature  
–40  
°C  
(1) Minimum derated capacitance of 0.47 µF is required for stability.  
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UNIT  
SBVS358B – JUNE 2018 – REVISED JANUARY 2021  
6.4 Thermal Information  
TPS746-Q1  
THERMAL METRIC(1)  
DRV (WSON)  
DRB (WSON)  
8 PINS  
62.0  
6 PINS  
80.3  
98.7  
44.8  
6.1  
RθJA  
Junction-to-ambient thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
73.1  
35.1  
ψJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
6.3  
ψJB  
45.0  
20.8  
35.1  
RθJC(bot)  
18.2  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
6.5 Electrical Characteristics  
at operating temperature range (TJ = –40°C to +150°C), VIN = VOUT(NOM) + 0.5 V or 1.5 V (whichever is greater), IOUT = 1 mA,  
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted); all typical values at TJ = 25°C  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
VFB  
Feedback voltage  
0.55  
V
TJ = 25°C  
–0.85%  
–1.00%  
–1.50%  
0.85%  
1.00%  
1.50%  
7.5  
Output accuracy(1)  
-40°C ≤ TJ ≤ 85°C  
-40°C ≤ TJ ≤ 150°C  
Line regulation  
Load regulation  
VOUT(NOM) + 0.5 V(2) ≤ VI N ≤ 6.0 V  
2
0.030  
25  
mV  
V/A  
0.1 mA ≤ IOUT ≤ 1 A, VIN ≥ 2.0 V  
TJ = 25°C  
32  
36  
IGND  
Ground current  
IOUT = 0 mA  
µA  
-40°C ≤ TJ ≤ 150°C  
25  
-40°C ≤ TJ ≤ 125°C  
-40°C ≤ TJ ≤ 150°C  
0.1  
1
VEN ≤ 0.3 V,  
1.5 V ≤ VIN ≤ 6.0 V  
ISHDN  
IFB  
Shutdown current  
µA  
µA  
0.1  
1.55  
0.1  
Feedback pin current  
Adjustable only  
VOUT(NOM) < 1 V,  
0.01  
VOUT = VOUT(NOM) - 0.2 V, VIN = 2.0 V  
ICL  
Output current limit  
1.22  
500  
1.5  
1.83  
850  
A
VOUT(NOM) ≥ 1 V,  
VOUT = VOUT(NOM) × 0.85, VIN = VOUT(NOM) + 1.0 V  
VOUT(NOM) < 1 V,  
VIN = 2.0 V  
ISC  
Short-circuit current limit VOUT = 0 V  
680  
mA  
VOUT(NOM) ≥ 1 V,  
VIN = VOUT(NOM) + 1.0 V  
0.65 V ≤ VOUT < 0.8 V(3)  
0.8 V ≤ VOUT < 0.9 V  
0.9 V ≤ VOUT < 1.0 V  
1.0 V ≤ VOUT < 1.2 V  
1.2 V ≤ VOUT < 1.5 V  
1.5 V ≤ VOUT < 1.8 V  
1.8 V ≤ VOUT < 2.5 V  
2.5 V ≤ VOUT < 3.3 V  
3.3 V ≤ VOUT ≤ 5.5 V  
f = 1 kHz  
895  
765  
700  
600  
465  
335  
265  
195  
160  
53  
1090  
960  
890  
790  
625  
480  
400  
310  
265  
IOUT = 1 A,  
VOUT = 0.95 x VOUT(NOM)  
VDO  
Dropout voltage  
mV  
VOUT = 1.8 V,  
VIN = 2.8 V,  
IOUT = 1 A,  
Power-supply rejection  
ratio  
f = 100 kHz  
38  
PSRR  
dB  
f = 1 MHz  
30  
COUT = 2.2 µF  
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6.5 Electrical Characteristics (continued)  
at operating temperature range (TJ = –40°C to +150°C), VIN = VOUT(NOM) + 0.5 V or 1.5 V (whichever is greater), IOUT = 1 mA,  
VEN = VIN, and CIN = COUT = 1 µF (unless otherwise noted); all typical values at TJ = 25°C  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
VN  
Output noise voltage  
BW = 10 Hz to 100 kHz, VOUT = 0.9 V, VIN = 1.9 V  
53  
µVRMS  
VIN rising  
VIN falling  
1.21  
1.17  
1.33  
1.29  
1.47  
1.42  
VUVLO  
Undervoltage lockout  
V
Undervoltage lockout  
hysteresis  
VUVLO,HYST  
tSTR  
VIN hysteresis  
40  
mV  
µs  
V
From EN low-to-high transition to VOUT  
VOUT(NOM) x 95%  
=
Startup time  
200  
1.0  
500  
650  
0.3  
EN pin high voltage  
(enabled)  
VHI  
EN pin low voltage  
(disabled)  
VLO  
V
IEN  
Enable pin current  
Pulldown resistance  
PG high threshold  
PG low threshold  
PG hysteresis  
VIN = VEN = 6.0 V  
VIN = 6.0 V  
10  
95  
92  
90  
2
nA  
Ω
RPULLDOWN  
PGHTH  
PGLTH  
VOUT increasing  
VOUT decreasing  
89  
86  
96 %VOUT  
93 %VOUT  
%VOUT  
PGHYST  
VIN ≥ 1.5 V, ISINK = 1 mA  
PG pin low-level output  
voltage  
VOL(PG)  
300  
mV  
VIN ≥ 2.75 V, ISINK = 2 mA  
VOUT ≥ 1.0 V, ISOURCE = 0.04 mA  
VOUT ≥ 1.4 V, ISOURCE = 0.2 mA  
VOUT ≥ 2.5 V, ISOURCE = 0.5 mA  
VOUT ≥ 4.5 V, ISOURCE = 1.0 mA  
PG pin high-level output  
voltage(4)  
VOH(PG)  
0.8 × VOUT  
V
Ilkg(PG)  
TSD  
PG pin leakage current(5) VOUT > PGHTH, VPG = 6.0 V  
7
170  
155  
50  
nA  
°C  
Shutdown, temperature increasing  
Thermal shutdown  
Reset, temperature decreasing  
(1) When the device is connected to external feedback resistors at the FB pin, external resistor tolerances are not included.  
(2) VIN = 1.5V for VOUT < 1.0 V  
(3) Dropout is not tested for nominal output voltages below 0.65 V since the input voltage may be below UVLO.  
(4) Push-pull version only. The push-pull option is supported only for VOUT ≥ 1.0 V.  
(5) Open-drain version only.  
6.6 Timing Requirements  
PARAMETER  
MIN  
135  
4.5  
NOM  
165  
5
MAX  
178  
5.5  
UNIT  
µs  
ms  
µs  
PG delay time rising, time from 92% VOUT to  
20% of PG(1)  
tPGDH  
tPGDL  
'B' version(2)  
PG delay time falling, time from 90% VOUT to 80% of PG(1)  
1.5  
7
10  
(1) Output overdrive = 10%.  
(2) See the Device Nomenclature table for more information on available PG timings.  
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6.7 Typical Characteristics  
at operating temperature range TJ = 25°C, VIN = VOUT(NOM) + 0.5 V or 1.5 V (whichever is greater), IOUT = 1 mA, VEN = VIN,  
and CIN = COUT = 1 μF (unless otherwise noted)  
0.6  
0.45  
0.3  
0.6  
0.45  
0.3  
0.15  
0
0.15  
0
-0.15  
-0.3  
-0.45  
-0.6  
-0.15  
-0.3  
-0.45  
-0.6  
TJ  
œ20èC  
0èC  
TJ  
œ20èC  
0èC  
œ50èC  
œ40èC  
25èC  
85èC  
125èC  
150èC  
œ50èC  
œ40èC  
25èC  
85èC  
125èC  
150èC  
3.8  
4
4.2 4.4 4.6 4.8  
5
Input Voltage (V)  
5.2 5.4 5.6 5.8  
6
1.5  
2
2.5  
3
3.5  
Input Voltage (V)  
4
4.5  
5
5.5  
6
VOUT = 3.3 V, IOUT = 1 mA  
VOUT = 0.55 V, IOUT = 1 mA  
Figure 6-1. 3.3-V Line Regulation vs VIN  
Figure 6-2. 0.55-V Line Regulation vs VIN  
0.3  
0.2  
0.1  
0
320  
280  
240  
200  
160  
120  
80  
TJ  
œ20èC  
0èC  
œ50èC  
œ40èC  
25èC  
85èC  
125èC  
150èC  
-0.1  
-0.2  
-0.3  
TJ  
œ20èC  
0èC  
œ50èC  
œ40èC  
25èC  
85èC  
125èC  
150èC  
40  
0
5.5  
5.6  
5.7 5.8  
Input Voltage (V)  
5.9  
6
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
Output Current (A)  
1
VOUT = 5.5 V, IOUT = 1 mA  
Figure 6-3. 5.5-V Line Regulation vs VIN  
Figure 6-4. 3.3-V Dropout Voltage vs IOUT  
1,280  
1,200  
1,120  
1,040  
960  
320  
280  
240  
200  
160  
120  
80  
TJ  
œ20èC  
0èC  
TJ  
œ20èC  
0èC  
œ50èC  
œ40èC  
25èC  
85èC  
125èC  
150èC  
œ50èC  
œ40èC  
25èC  
85èC  
125èC  
150èC  
880  
800  
720  
40  
640  
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
Output Current (A)  
1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
Output Current (A)  
1
Figure 6-5. 0.55-V Dropout Voltage vs IOUT  
Figure 6-6. 5.5-V Dropout Voltage vs IOUT  
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6.7 Typical Characteristics (continued)  
at operating temperature range TJ = 25°C, VIN = VOUT(NOM) + 0.5 V or 1.5 V (whichever is greater), IOUT = 1 mA, VEN = VIN,  
and CIN = COUT = 1 μF (unless otherwise noted)  
1,100  
1,000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
1,200  
1,050  
900  
750  
600  
450  
300  
150  
0
TJ  
œ20èC  
0èC  
œ50èC  
œ40èC  
25èC  
85èC  
125èC  
150èC  
TJ  
œ20èC  
0èC  
œ50èC  
œ40èC  
25èC  
85èC  
125èC  
150èC  
0.5  
1
1.5  
2
2.5  
3
Output Voltage (V)  
3.5  
4
4.5  
5
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
Output Current (A)  
1
IOUT = 1 A  
Figure 6-7. VDO vs VOUT  
Figure 6-8. IGND vs IOUT  
2,100  
1,800  
1,500  
1,200  
900  
560  
480  
400  
320  
240  
160  
80  
TJ  
œ20èC  
0èC  
TJ  
œ20èC  
0èC  
œ50èC  
œ40èC  
25èC  
85èC  
125èC  
150èC  
œ50èC  
œ40èC  
25èC  
85èC  
125èC  
150èC  
600  
300  
0
0
-300  
-80  
0
0
0.6 1.2 1.8 2.4  
3
Input Voltage (V)  
3.6 4.2 4.8 5.4  
6
0.6 1.2 1.8 2.4  
3
Input Voltage (V)  
3.6 4.2 4.8 5.4  
6
VEN = 0 V  
VOUT = 3.3 V, IOUT = 0 mA  
Figure 6-9. ISHDN vs VIN  
Figure 6-10. IGND vs VIN  
1.6  
1.2  
0.8  
0.4  
0
0.8  
0.6  
0.4  
0.2  
0
TJ  
œ20èC  
0èC  
TJ  
œ20èC  
0èC  
œ50èC  
œ40èC  
25èC  
85èC  
125èC  
150èC  
œ50èC  
œ40èC  
25èC  
85èC  
125èC  
150èC  
-0.4  
-0.8  
-1.2  
-0.2  
-0.4  
-0.6  
-1.6  
0
-0.8  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
Output Current (A)  
1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
Output Current (A)  
1
VIN = 3.8 V, VOUT = 3.3 V  
VIN = 2 V, VOUT = 0.55 V  
Figure 6-11. 3.3-V Load Regulation vs IOUT  
Figure 6-12. 0.55-V Load Regulation vs IOUT  
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6.7 Typical Characteristics (continued)  
at operating temperature range TJ = 25°C, VIN = VOUT(NOM) + 0.5 V or 1.5 V (whichever is greater), IOUT = 1 mA, VEN = VIN,  
and CIN = COUT = 1 μF (unless otherwise noted)  
1.2  
0.9  
0.6  
0.3  
0
640  
560  
480  
400  
320  
240  
160  
80  
TJ  
œ20èC  
0èC  
TJ  
œ20èC  
0èC  
œ50èC  
œ40èC  
25èC  
85èC  
125èC  
150èC  
œ50èC  
œ40èC  
25èC  
85èC  
125èC  
150èC  
-0.3  
-0.6  
-0.9  
-1.2  
0
0
0.5  
1
1.5  
2
2.5  
3
Pulldown Current (mA)  
3.5  
4
4.5  
5
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
Output Current (A)  
1
VIN = 6 V, VOUT = 5 V  
Figure 6-14. VOUT vs IOUT Pulldown Resistor  
Figure 6-13. 5-V Load Regulation vs IOUT  
92.5  
92.25  
92  
40  
35  
30  
25  
20  
15  
10  
5
91.75  
91.5  
91.25  
91  
90.75  
90.5  
90.25  
90  
89.75  
89.5  
89.25  
89  
0
-5  
PGLTH  
PGHTH  
PG = 3.3 V  
PG = 5.5 V  
100 125 150  
-10  
-50  
-50 -30 -10 10  
30  
50  
70 90 110 130 150  
-25  
0
25  
50  
75  
Temperature (èC)  
Temperature (èC)  
Figure 6-15. PGLTH and PGHTH vs Temperature  
300  
Figure 6-16. IIkg(PG) vs Temperature and PG Pin Voltage  
166  
tPGDH  
TJ  
œ20èC  
0èC  
270  
240  
210  
180  
150  
120  
90  
œ50èC  
œ40èC  
25èC  
85èC  
125èC  
150èC  
164  
162  
160  
158  
156  
154  
152  
150  
60  
30  
0
0.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.4  
0.6  
0.8  
1
1.2  
1.4  
PG Pin Sink Current (mA)  
1.6  
1.8  
2
Temperature (èC)  
VIN = 3.8 V, VOUT = 3.3 V  
Figure 6-18. tPGDH vs Temperature  
Figure 6-17. VOL(PG) vs PG Pin Sink Current  
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6.7 Typical Characteristics (continued)  
at operating temperature range TJ = 25°C, VIN = VOUT(NOM) + 0.5 V or 1.5 V (whichever is greater), IOUT = 1 mA, VEN = VIN,  
and CIN = COUT = 1 μF (unless otherwise noted)  
4.96  
4.94  
4.92  
4.9  
6.5  
6.1  
5.7  
5.3  
4.9  
4.5  
4.1  
3.7  
3.3  
2.9  
2.5  
tPGDH  
tPGDL  
4.88  
4.86  
4.84  
4.82  
4.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature (èC)  
Temperature (èC)  
Figure 6-19. tPGDH vs Temperature (For TPS746B Only)  
Figure 6-20. tPGDL vs Temperature  
840  
300  
250  
200  
150  
100  
50  
VEN(LO)  
VEN(HI)  
TJ  
800  
760  
720  
680  
640  
600  
560  
520  
480  
440  
œ50èC  
œ40èC  
œ20èC  
0èC  
125èC  
85èC  
125èC  
150èC  
0
-50  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
Input Voltage (V)  
4
4.5  
5
5.5  
Temperature (èC)  
VEN = 5.5 V  
Figure 6-22. IEN vs VIN  
Figure 6-21. VEN(HI) and VEN(LO) vs Temperature  
14  
25  
20  
5
Vin  
Vout  
TJ  
-20èC  
13  
12  
11  
10  
9
4.5  
4
-50èC  
-40èC  
25èC  
85èC  
125èC  
15  
10  
5
0èC  
3.5  
3
0
8
-5  
7
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
2.5  
2
6
5
4
1.5  
1
3
2
1
0.5  
0
0
0
0.5  
1
Time (ms)  
1.5  
2
0
0.2 0.4 0.6 0.8  
1
Output Current (A)  
1.2 1.4 1.6 1.8  
2
VOUT = 0.55 V, IOUT = 1 mA, VIN slew rate = 1 V/µs  
Figure 6-24. 0.55-V Line Transient  
Figure 6-23. 3.3-V Foldback Current Limit vs IOUT  
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6.7 Typical Characteristics (continued)  
at operating temperature range TJ = 25°C, VIN = VOUT(NOM) + 0.5 V or 1.5 V (whichever is greater), IOUT = 1 mA, VEN = VIN,  
and CIN = COUT = 1 μF (unless otherwise noted)  
10  
9.5  
9
120  
100  
80  
4.5  
4
200  
150  
100  
50  
Iout  
Vout  
Vin  
Vout  
3.5  
3
8.5  
8
60  
40  
7.5  
7
20  
2.5  
2
0
0
-50  
6.5  
6
-20  
-40  
-60  
-80  
-100  
-120  
-140  
-160  
1.5  
1
-100  
-150  
-200  
-250  
-300  
5.5  
5
4.5  
4
0.5  
0
3.5  
3
-0.5  
0
50 100 150 200 250 300 350 400 450 500  
Time (us)  
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8  
Time (ms)  
2
VOUT = 0.55 V, VIN = 2 V, IOUT slew rate = 1 A/µs  
VOUT = 3.3 V, IOUT = 1 mA, VIN slew rate = 1 V/µs  
Figure 6-26. 1-mA to 1-A Load Transient (0.55 V)  
Figure 6-25. 3.3-V Line Transient  
4.5  
240  
160  
80  
4.5  
240  
Iout  
Vout  
Iout  
Vout  
4
3.5  
3
4
3.5  
3
160  
80  
0
0
2.5  
2
-80  
2.5  
2
-80  
-160  
-240  
-320  
-400  
-480  
-560  
-160  
-240  
-320  
-400  
-480  
-560  
1.5  
1
1.5  
1
0.5  
0
0.5  
0
-0.5  
-0.5  
0
50 100 150 200 250 300 350 400 450 500  
Time (us)  
0
60 120 180 240 300 360 420 480 540 600  
Time (us)  
VOUT = 5 V, VIN = 5.5 V, IOUT slew rate = 1 A/µs  
VOUT = 3.3 V, VIN = 3.8 V, IOUT slew rate = 1 A/µs  
Figure 6-27. 1-mA to 1-A Load Transient (5 V)  
Figure 6-28. 1-mA to 1-A Load Transient (3.3 V)  
5
5
4.5  
4
3.5  
3
4
3
2.5  
2
2
1.5  
1
1
0.5  
0
Vout  
Venable  
Vin  
0
Vout  
Vin  
-0.5  
-1  
-1  
0
200  
400  
600  
800  
1,000  
0
200  
400  
600  
800  
1,000  
Time (us)  
Time (us)  
VIN = 3.8 V, VOUT = 3.3 V, IOUT = 1 mA  
VIN = 3.8 V, VOUT = 3.3 V, IOUT = 1 mA  
Figure 6-29. VIN Power-Up  
Figure 6-30. Startup With EN  
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6.7 Typical Characteristics (continued)  
at operating temperature range TJ = 25°C, VIN = VOUT(NOM) + 0.5 V or 1.5 V (whichever is greater), IOUT = 1 mA, VEN = VIN,  
and CIN = COUT = 1 μF (unless otherwise noted)  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VIN = 3.5 V  
VIN = 3.6 V  
VIN = 3.7 V  
VIN = 3.8 V  
VIN = 3.9 V  
VIN = 4.0 V  
VIN = 4.1 V  
VIN = 4.2 V  
VIN = 4.3 V  
10  
100  
1k  
10k  
Frequency (Hz)  
100k  
1M  
10M  
10  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
D001  
VOUT = 3.3 V, IOUT = 500 mA, COUT = 2.2 µF  
VOUT = 3.3 V, IOUT = 500 mA, COUT = 2.2 µF  
Figure 6-31. PSRR vs Frequency and VIN  
Figure 6-32. PSRR vs Frequency and VIN  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VIN = 3.5 V  
VIN = 3.6 V  
VIN = 3.7 V  
VIN = 3.8 V  
VIN = 3.9 V  
VIN = 4.0 V  
VIN = 4.1 V  
VIN = 4.2 V  
VIN = 4.3 V  
10  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
10  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
VOUT = 3.3 V, IOUT = 250 mA, COUT = 2.2 µF  
VOUT = 3.3 V, IOUT = 250 mA, COUT = 2.2 µF  
Figure 6-33. PSRR vs Frequency and VIN  
Figure 6-34. PSRR vs Frequency and VIN  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VIN = 1.9 V, VOUT = 0.9 V  
VIN = 2.8 V, VOUT = 1.8 V  
VIN = 4.3 V, VOUT = 3.3 V  
VIN = 2.3 V, VOUT = 1.8 V  
VIN = 2.8 V, VOUT = 1.8 V  
VIN = 3.8 V, VOUT = 3.3 V  
VIN = 4.3 V, VOUT = 3.3 V  
10  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
10  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
IOUT = 500 mA, COUT = 2.2 µF  
IOUT = 1 A, COUT = 2.2 µF  
Figure 6-35. PSRR vs Frequency  
Figure 6-36. PSRR vs Frequency  
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6.7 Typical Characteristics (continued)  
at operating temperature range TJ = 25°C, VIN = VOUT(NOM) + 0.5 V or 1.5 V (whichever is greater), IOUT = 1 mA, VEN = VIN,  
and CIN = COUT = 1 μF (unless otherwise noted)  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
COUT = 1 mF  
CFF = 0 nF  
CFF = 1 nF  
CFF = 10 nF  
CFF = 100 nF  
COUT = 2.2 mF  
COUT = 4.7 mF  
COUT = 47 mF  
10  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
10  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
VIN = 3.8 V, VOUT = 3.3 V, IOUT = 500 mA  
VIN = 3.8 V, VOUT = 3.3 V, IOUT = 500 mA  
Figure 6-37. PSRR vs Frequency and COUT  
Figure 6-38. PSRR vs Frequency and CFF  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
20  
IOUT= 100mA, 170mVRMS  
IOUT= 500mA, 169mVRMS  
IOUT= 1A, 160mVRMS  
10  
5
2
1
0.5  
0.2  
0.1  
ILOAD = 10 mA  
ILOAD = 100 mA  
ILOAD = 250 mA  
ILOAD = 500 mA  
ILOAD = 1 A  
0.05  
0.02  
0.01  
-10  
0.005  
10  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
10  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
VIN = 3.8 V, VOUT = 3.3 V, COUT = 2.2 µF  
VIN = 3.8 V, VOUT = 3.3 V, COUT = 4.7 µF, VRMS BW = 10 Hz to  
100 kHz  
Figure 6-40. Output Spectral Noise Density vs Frequency and  
IOUT  
Figure 6-39. PSRR vs Frequency and ILOAD  
20  
10  
20  
IOUT= 10mA, 159mVRMS  
IOUT= 100mA, 160mVRMS  
IOUT= 500mA, 160mVRMS  
CFF = 0 nF, 160 mVRMS  
10  
CFF = 1 nF, 108 mVRMS  
5
5
CFF = 10 nF, 74 mVRMS  
CFF = 100 nF, 44 mVRMS  
2
1
2
1
0.5  
0.5  
0.2  
0.1  
0.2  
0.1  
0.05  
0.05  
0.02  
0.01  
0.02  
0.01  
0.005  
0.005  
10  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
10  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
VIN = 3.8 V, VOUT = 3.3 V, COUT = 2.2 µF, VRMS BW = 10 Hz to  
100 kHz  
VIN = 3.8 V, VOUT = 3.3 V, IOUT = 500 mA, COUT = 2.2 µF, VRMS  
BW = 10 Hz to 100 kHz  
Figure 6-41. Output Spectral Noise Density vs Frequency and  
IOUT  
Figure 6-42. Output Spectral Noise Density vs Frequency and  
CFF  
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6.7 Typical Characteristics (continued)  
at operating temperature range TJ = 25°C, VIN = VOUT(NOM) + 0.5 V or 1.5 V (whichever is greater), IOUT = 1 mA, VEN = VIN,  
and CIN = COUT = 1 μF (unless otherwise noted)  
20  
10  
5
20  
10  
5
COUT = 2.2mF, 160 mVRMS  
COUT = 4.7mF, 170 mVRMS  
COUT = 47mF, 138 mVRMS  
VIN=1.9V, VOUT=0.9V, 53mVRMS  
VIN=2.8V, VOUT=1.8V, 96mVRMS  
VIN=3.8V, VOUT=3.3V, 160mVRMS  
2
1
2
1
0.5  
0.5  
0.2  
0.1  
0.2  
0.1  
0.05  
0.05  
0.02  
0.01  
0.02  
0.01  
0.005  
0.005  
10  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
10  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
VIN = 3.8 V, VOUT = 3.3 V, IOUT = 100 mA, CFF = 0 µF, VRMS BW  
= 10 Hz to 100 kHz  
IOUT = 500 mA, COUT = 2.2 µF, VRMS BW = 10 Hz to 100 kHz  
Figure 6-43. Output Spectral Noise Density vs Frequency and  
COUT  
Figure 6-44. Output Spectral Noise Density vs Frequency  
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7 Detailed Description  
7.1 Overview  
The TPS746-Q1 is a low-dropout regulator (LDO) that consumes low quiescent current and delivers excellent  
line and load transient performance. These characteristics, combined with low noise and good PSRR with low  
dropout voltage, make this device ideal for portable consumer applications.  
This regulator offers foldback current limit, shutdown, and thermal protection. The operating junction temperature  
for this device is –40°C to +150°C.  
7.2 Functional Block Diagrams  
IN  
OUT  
Current  
Limit  
Thermal  
Shutdown  
95 Ω  
œ
+
FB  
UVLO  
PG  
œ
+
0.90 x VREF  
EN  
Band Gap  
GND  
Logic  
Figure 7-1. Adjustable Version With Open-Drain Power-Good  
IN  
OUT  
Current  
Limit  
Thermal  
Shutdown  
95 Ω  
œ
+
FB  
UVLO  
PG  
œ
+
0.90 x VREF  
EN  
Band Gap  
GND  
Logic  
Figure 7-2. Adjustable Version With Push-Pull Power-Good  
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IN  
OUT  
Current  
Limit  
Thermal  
Shutdown  
95 Ω  
œ
+
UVLO  
PG  
œ
+
0.90 x VREF  
EN  
Band Gap  
GND  
Logic  
Figure 7-3. Fixed Voltage Version With Open-Drain Power-Good  
IN  
OUT  
Current  
Limit  
Thermal  
Shutdown  
95 Ω  
œ
+
UVLO  
PG  
œ
+
0.90 x VREF  
EN  
Band Gap  
GND  
Logic  
Figure 7-4. Fixed Voltage Version With Push-Pull Power-Good  
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7.3 Feature Description  
7.3.1 Undervoltage Lockout (UVLO)  
The TPS746-Q1 uses an undervoltage lockout (UVLO) circuit that disables the output until the input voltage is  
greater than the rising UVLO voltage (VUVLO). This circuit ensures that the device does not exhibit any  
unpredictable behavior when the supply voltage is lower than the operational range of the internal circuitry.  
When VIN is less than VUVLO, the output is connected to ground with a pulldown resistor (RPULLDOWN).  
7.3.2 Shutdown  
The enable pin (EN) is active high. Enable the device by forcing the EN pin to exceed VEN(HI). Turn off the device  
by forcing the EN pin to drop below VEN(LO). If shutdown capability is not required, connect EN to IN.  
The TPS746-Q1 has an internal pulldown MOSFET that connects an RPULLDOWN resistor to ground when the  
device is disabled. The discharge time after disabling depends on the output capacitance (COUT) and the load  
resistance (RL) in parallel with the pulldown resistor (RPULLDOWN). Equation 1 calculates the time constant:  
τ = ( RPULLDOWN × RL) / (RPULLDOWN + RL)  
(1)  
7.3.3 Foldback Current Limit  
The device has an internal current limit circuit that protects the regulator during transient high-load current faults  
or shorting events. The current limit is a hybrid brickwall-foldback scheme. The current limit transitions from a  
brickwall scheme to a foldback scheme at the foldback voltage (VFOLDBACK). In a high-load current fault with the  
output voltage above VFOLDBACK, the brickwall scheme limits the output current to the current limit (ICL). When  
the voltage drops below VFOLDBACK, a foldback current limit activates that scales back the current as the output  
voltage approaches GND. When the output is shorted, the device supplies a typical current called the short-  
circuit current limit (ISC). ICL and ISC are listed in the Electrical Characteristics table.  
For this device, VFOLDBACK = 0.4 × VOUT(NOM)  
.
The output voltage is not regulated when the device is in current limit. When a current limit event occurs, the  
device begins to heat up because of the increase in power dissipation. When the device is in brickwall current  
limit, the pass transistor dissipates power [(VIN – VOUT) × ICL]. When the device output is shorted and the output  
is below VFOLDBACK, the pass transistor dissipates power [(VIN – VOUT) × ISC]. If thermal shutdown is triggered,  
the device turns off. After the device cools down, the internal thermal shutdown circuit turns the device back on.  
If the output current fault condition continues, the device cycles between current limit and thermal shutdown. For  
more information on current limits, see the Know Your Limits application report.  
Figure 7-5 shows a diagram of the foldback current limit.  
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VOUT  
Brickwall  
VOUT(NOM)  
VFOLDBACK  
Foldback  
0 V  
IOUT  
IRATED  
0 mA  
ISC  
ICL  
Figure 7-5. Foldback Current Limit  
7.3.4 Thermal Shutdown  
Thermal shutdown protection disables the output when the junction temperature rises to approximately 170°C.  
Disabling the device eliminates the power dissipated by the device, allowing the device to cool. When the  
junction temperature cools to approximately 155°C, the output circuitry is again enabled. Depending on power  
dissipation, thermal resistance, and ambient temperature, the thermal protection circuit may cycle on and off.  
This cycling limits regulator dissipation, protecting the LDO from damage as a result of overheating.  
Activating the thermal shutdown feature usually indicates excessive power dissipation as a result of the product  
of the (VIN – VOUT) voltage and the load current. For reliable operation limit junction temperature to 125°C,  
maximum. To estimate the margin of safety in a complete design, increase the ambient temperature until the  
thermal protection is triggered; use worst-case loads and signal conditions.  
The TPS746-Q1 internal protection circuitry protects against overload conditions but is not intended to be  
activated in normal operation. Continuously running the TPS746-Q1 into thermal shutdown degrades device  
reliability.  
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7.4 Device Functional Modes  
7.4.1 Device Functional Mode Comparison  
The Device Functional Mode Comparison table shows the conditions that lead to the different modes of  
operation. See the Electrical Characteristics table for parameter values.  
Table 7-1. Device Functional Mode Comparison  
PARAMETER  
OPERATING MODE  
VIN  
VEN  
IOUT  
TJ  
Normal operation  
Dropout operation  
VIN > VOUT(nom) + VDO and VIN > VIN(min)  
VIN(min) < VIN < VOUT(nom) + VDO  
VEN > VEN(HI)  
VEN > VEN(HI)  
IOUT < IOUT(max)  
IOUT < IOUT(max)  
TJ < TSD(shutdown)  
TJ < TSD(shutdown)  
Disabled  
(any true condition  
disables the device)  
VIN < VUVLO  
VEN < VEN(LOW)  
Not applicable  
TJ > TSD(shutdown)  
7.4.2 Normal Operation  
The device regulates to the nominal output voltage when the following conditions are met:  
The input voltage is greater than the nominal output voltage plus the dropout voltage (VOUT(nom) + VDO)  
The output current is less than the current limit (IOUT < ICL)  
The device junction temperature is less than the thermal shutdown temperature (TJ < TSD  
)
The enable voltage has previously exceeded the enable rising threshold voltage and has not yet decreased  
to less than the enable falling threshold  
7.4.3 Dropout Operation  
If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other  
conditions are met for normal operation, the device operates in dropout mode. In this mode, the output voltage  
tracks the input voltage. During this mode, the transient performance of the device becomes significantly  
degraded because the pass transistor is in the ohmic or triode region, and acts as a switch. Line or load  
transients in dropout can result in large output-voltage deviations.  
When the device is in a steady dropout state (defined as when the device is in dropout, VIN < VOUT(NOM) + VDO  
,
directly after being in a normal regulation state, but not during startup), the pass transistor is driven into the  
ohmic or triode region. When the input voltage returns to a value greater than or equal to the nominal output  
voltage plus the dropout voltage (VOUT(NOM) + VDO), the output voltage can overshoot for a short period of time  
while the device pulls the pass transistor back into the linear region.  
7.4.4 Disabled  
The output of the device can be shutdown by forcing the voltage of the enable pin to less than the maximum EN  
pin low-level input voltage (see the Electrical Characteristics table). When disabled, the pass transistor is turned  
off, internal circuits are shutdown, and the output voltage is actively discharged to ground by an internal  
discharge circuit from the output to ground.  
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8 Application and Implementation  
Note  
Information in the following applications sections is not part of the TI component specification, and TI  
does not warrant its accuracy or completeness. TI’s customers are responsible for determining  
suitability of components for their purposes, as well as validating and testing their design  
implementation to confirm system functionality.  
8.1 Application Information  
8.1.1 Adjustable Device Feedback Resistors  
Figure 8-1 shows that the output voltage of the TPS746P-Q1 can be adjusted from 0.55 V to 5.5 V by using a  
resistor divider network.  
VIN  
VOUT  
IN  
OUT  
FB  
Cff  
TPS746-Q1  
CIN  
COUT  
R1  
R2  
EN  
RPG  
*
PG  
GND  
*Pull-up resistor not required  
for push-pull option  
Figure 8-1. Adjustable Operation  
The adjustable-version device requires external feedback divider resistors to set the output voltage. VOUT is set  
using the feedback divider resistors, R1 and R2, according to the following equation:  
VOUT = VFB × (1 + R1 / R2)  
(2)  
To ignore the FB pin current error term in the VOUT equation, set the feedback divider current to 100x the FB pin  
current listed in the Electrical Characteristics table. This setting provides the maximum feedback divider series  
resistance, as shown in the following equation:  
R1 + R2 ≤ VOUT / (IFB × 100)  
(3)  
8.1.2 Input and Output Capacitor Selection  
The TPS746-Q1 requires an output capacitance of 0.47 µF or larger for stability. Use X5R- and X7R-type  
ceramic capacitors because these capacitors have minimal variation in value and equivalent series resistance  
(ESR) over temperature. When choosing a capacitor for a specific application, pay attention to the dc bias  
characteristics for the capacitor. Higher output voltages cause a significant derating of the capacitor. For best  
performance, the maximum recommended output capacitance is 220 µF.  
Although an input capacitor is not required for stability, good analog design practice is to connect a capacitor  
from IN to GND. Some input supplies have a high impedance, thus placing the input capacitor on the input  
supply helps reduce the input impedance. This capacitor counteracts reactive input sources and improves  
transient response, input ripple, and PSRR. If the input supply has a high impedance over a large range of  
frequencies, several input capacitors can be used in parallel to lower the impedance over frequency. Use a  
higher-value capacitor if large, fast, rise-time load transients are anticipated, or if the device is located several  
inches from the input power source.  
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8.1.3 Dropout Voltage  
The TPS746-Q1 uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the  
dropout voltage (VDO), the PMOS pass device is in the linear region of operation and the input-to-output  
resistance is the RDS(ON) of the PMOS pass element. VDO scales approximately with output current because the  
PMOS device behaves like a resistor in dropout mode. As with any linear regulator, PSRR and transient  
response degrade as (VIN – VOUT) approaches dropout operation.  
8.1.4 Exiting Dropout  
Some applications have transients that place the LDO into dropout, such as slower ramps on VIN during start-up.  
As with other LDOs, the output may overshoot on recovery from these conditions. A ramping input supply  
causes an LDO to overshoot on start-up, as shown in Figure 8-2, when the slew rate and voltage levels are in  
the correct range. Use an enable signal to avoid this condition.  
Input Voltage  
Response time for  
LDO to get back into  
regulation.  
Load current discharges  
output voltage.  
VIN = VOUT(nom) + VDO  
Output Voltage  
Dropout  
VOUT = VIN - VDO  
Output Voltage in  
normal regulation.  
Time  
Figure 8-2. Startup Into Dropout  
Line transients out of dropout can also cause overshoot on the output of the regulator. These overshoots are  
caused by the error amplifier having to drive the gate capacitance of the pass element and bring the gate back to  
the correct voltage for proper regulation. Figure 8-3 illustrates what is happening internally with the gate voltage  
and how overshoot can be caused during operation. When the LDO is placed in dropout, the gate voltage (VGS)  
is pulled all the way down to ground to give the pass device the lowest on-resistance as possible. However, if a  
line transient occurs when the device is in dropout, the loop is not in regulation and can cause the output to  
overshoot until the loop responds and the output current pulls the output voltage back down into regulation. If  
these transients are not acceptable, then continue to add input capacitance in the system until the transient is  
slow enough to reduce the overshoot.  
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Figure 8-3. Line Transients From Dropout  
8.1.5 Reverse Current  
As with most LDOs, excessive reverse current can damage this device.  
Reverse current flows through the body diode on the pass element instead of the normal conducting channel. At  
high magnitudes, this current flow degrades the long-term reliability of the device, as a result of one of the  
following conditions:  
Degradation caused by electromigration  
Excessive heat dissipation  
Potential for a latch-up condition  
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Conditions where reverse current can occur are outlined in this section, all of which can exceed the absolute  
maximum rating of VOUT > VIN + 0.3 V:  
If the device has a large COUT and the input supply collapses with little or no load current  
The output is biased when the input supply is not established  
The output is biased above the input supply  
If reverse current flow is expected in the application, external protection must be used to protect the device.  
Figure 8-4 shows one approach of protecting the device.  
Schottky Diode  
Internal Body Diode  
IN  
OUT  
Device  
COUT  
CIN  
GND  
Figure 8-4. Example Circuit for Reverse Current Protection Using a Schottky Diode  
8.1.6 Power Dissipation (PD)  
Circuit reliability requires consideration of the device power dissipation, location of the circuit on the printed  
circuit board (PCB), and correct sizing of the thermal plane. The PCB area around the regulator must have few  
or no other heat-generating devices that cause added thermal stress.  
To first-order approximation, power dissipation in the regulator depends on the input-to-output voltage difference  
and load conditions. The following equation calculates power dissipation (PD).  
PD = (VIN – VOUT) × IOUT  
(4)  
Note  
Power dissipation can be minimized, and therefore greater efficiency can be achieved, by correct  
selection of the system voltage rails. For the lowest power dissipation use the minimum input voltage  
required for correct output regulation.  
For devices with a thermal pad, the primary heat conduction path for the device package is through the thermal  
pad to the PCB. Solder the thermal pad to a copper pad area under the device. This pad area must contain an  
array of plated vias that conduct heat to additional copper planes for increased heat dissipation.  
The maximum power dissipation determines the maximum allowable ambient temperature (TA) for the device.  
According to the following equation, power dissipation and junction temperature are most often related by the  
junction-to-ambient thermal resistance (RθJA) of the combined PCB and device package and the temperature of  
the ambient air (TA).  
TJ = TA + (RθJA × PD)  
(5)  
Thermal resistance (RθJA) is highly dependent on the heat-spreading capability built into the particular PCB  
design, and therefore varies according to the total copper area, copper weight, and location of the planes. The  
junction-to-ambient thermal resistance listed in the Thermal Information table is determined by the JEDEC  
standard PCB and copper-spreading area, and is used as a relative measure of package thermal performance.  
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Figure 8-5 and Figure 8-6 show the functions of RθJA and ψJB versus copper area and thickness. These plots are  
generated with a 101.6-mm × 101.6-mm × 1.6-mm PCB of two and four layers. For the four layer board, the  
inner planes use 1-oz copper thickness. Outer layers are simulated with both 1-oz and 2-oz copper thickness. A  
2 x 1 array of thermal vias of 300-µm drill diameter and 25-µm copper (Cu) plating is located beneath the thermal  
pad of the device. The thermal vias connect the top layer, the bottom layer and, in the case of the 4-layer board,  
the first inner GND plane. Each of the layers has a copper plane of equal area, as shown in Figure 8-7.  
140  
2 layer PCB, 1 oz copper  
2 layer PCB, 2 oz copper  
4 layer PCB, 1 oz copper  
4 layer PCB, 2 oz copper  
130  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
Cu Area Per Layer (cm2)  
thet  
Figure 8-5. RθJA versus Cu Area for the WSON (DRV) Package  
36  
34  
32  
30  
28  
26  
24  
22  
20  
2 layer PCB, 1 oz copper  
2 layer PCB, 2 oz copper  
4 layer PCB, 1 oz copper  
4 layer PCB, 2 oz copper  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
Cu Area Per Layer (cm2)  
psyJ  
Figure 8-6. ψJB versus Cu Area for the WSON (DRV) Package  
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As shown in Figure 8-7, each of the layers has a copper plane of equal area.  
A
2-mm  
A
1-mm  
Buried plane and bottom layer Cu ground  
planes are modeled with Area = A×A  
Figure 8-7. Board Parameters Used for Simulation  
For a more comprehensive study of how thermal resistance varies with copper area and thickness, see the An  
Empirical Analysis of the Impact of Board Layout on LDO Thermal Performance application report. As shown in  
Figure 8-8, modifying board layout to be more thermally enhanced can lower the RθJA value from 80.3°C/W to  
46.8°C/W or better.  
Figure 8-8. TPS746-Q1 (WSON) RθJA vs Board Layout  
8.1.7 Power-Good Function  
The power-good circuit monitors the voltage at the feedback pin to indicate the status of the output voltage.  
When the output voltage falls below the PG threshold voltage (PGLTH), the PG pin open-drain output engages  
and pulls the PG pin close to GND. When the output voltage exceeds PGHTH, the PG pin becomes high  
impedance. The open-drain output requires a pullup resistor. By connecting a pullup resistor to an external  
supply, any downstream device can receive power-good as a logic signal that can be used for sequencing.  
Additionally, the open-drain output can be tied to other open-drain outputs to implement AND logic. Make sure  
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that the external pullup supply voltage results in a valid logic signal for the receiving device. Using a pullup  
resistor from 10 kΩ to 100 kΩ is recommended. The push-pull power-good output option does not require the  
pullup resistor and instead has a high logic signal that correlates with the output voltage of the device. The push-  
pull option is supported only for VOUT ≥ 1.0 V. Do not tie the push-pull output to other logic outputs.  
When using a feed-forward capacitor (CFF), the time constant for the LDO startup is increased whereas the  
power-good output time constant stays the same, possibly resulting in an invalid status of the power-good  
output. To avoid this issue, and to receive a valid PG output, make sure that the time constant of both the LDO  
startup and the power-good output match, which can be done by adding a capacitor in parallel with the power-  
good pullup resistor. For more information, see the Pros and Cons of Using a Feedforward Capacitor with a Low-  
Dropout Regulator application report.  
The state of PG is only valid when the device operates above the minimum input voltage of the device and  
power-good is asserted, regardless of the output voltage state when the input voltage falls below the UVLO  
threshold minus the UVLO hysteresis. When the input voltage falls below approximately 0.8 V, there is not  
enough gate drive voltage to keep the open-drain, power-good device turned on and the power-good output  
pulled high. Connecting the power-good pullup resistor to the output voltage can help minimize this effect.  
8.1.8 Feed-Forward Capacitor (CFF)  
For the adjustable-voltage version device, a feed-forward capacitor (CFF) can be connected from the OUT pin to  
the FB pin. CFF improves transient, noise, and PSRR performance, but is not required for regulator stability.  
Recommended CFF values are listed in the Recommended Operating Conditions table. A higher capacitance  
CFF can be used; however, the startup time increases. For a detailed description of CFF tradeoffs, see the Pros  
and Cons of Using a Feedforward Capacitor with a Low-Dropout Regulator application report.  
8.1.9 Start-Up Sequencing  
If VEN is greater than VUVLO rising (min), the input pin (IN) must sink 1 mA of current to avoid the device being  
turned on with a floating input pin.  
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8.2 Typical Application  
Figure 8-9 shows the typical application circuit for the TPS746P-Q1. Input and output capacitances must be at  
least 1 µF.  
VIN  
VOUT  
IN  
OUT  
FB  
Cff  
TPS746-Q1  
CIN  
COUT  
R1  
R2  
EN  
RPG  
*
PG  
GND  
*Pull-up resistor not required  
for push-pull option  
Figure 8-9. TPS746-Q1 Typical Application  
8.2.1 Design Requirements  
Use the parameters listed in Table 8-1 for typical linear regulator applications.  
Table 8-1. Design Parameters  
PARAMETER  
Input voltage  
DESIGN REQUIREMENT  
3.8 V  
3.3 V, ±1%  
1.2 A (maximum)  
1-A DC  
Output voltage  
Input current  
Output load  
Maximum ambient temperature  
70°C  
8.2.2 Detailed Design Procedure  
Input and output capacitors are required to achieve the output voltage transient requirements. Capacitance  
values of 2.2 µF are selected to give the maximum output capacitance in a small, low-cost package; see the  
Input and Output Capacitor Selection section for details.  
Figure 8-1 illustrates the output voltage of the TPS746-Q1. Set the output voltage using the resistor divider; see  
the Adjustable Device Feedback Resistors section for details.  
8.2.2.1 Input Current  
During normal operation, the input current to the LDO is approximately equal to the output current of the LDO.  
During startup, the input current is higher as a result of the inrush current charging the output capacitor. Use  
Equation 6 to calculate the current through the input.  
C
OUT ´ dVOUT(t)  
VOUT(t)  
RLOAD  
IOUT(t)  
=
+
dt  
(6)  
where:  
VOUT(t) is the instantaneous output voltage of the turn-on ramp  
dVOUT(t) / dt is the slope of the VOUT ramp  
RLOAD is the resistive load impedance  
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8.2.2.2 Thermal Dissipation  
The junction temperature can be determined using the junction-to-ambient thermal resistance (RθJA) and the  
total power dissipation (PD). Use Equation 7 to calculate the power dissipation. Multiply PD by RθJA as Equation  
8 shows and add the ambient temperature (TA) to calculate the junction temperature (TJ).  
PD = (IGND+ IOUT) × (VIN – VOUT  
TJ = RθJA × PD + TA  
)
(7)  
(8)  
Calculate the maximum ambient temperature as Equation 9 shows if the (TJ(MAX)) value does not exceed 125°C.  
Equation 10 calculates the maximum ambient temperature with a value of 109.85°C.  
TA(MAX) = TJ(MAX) – RθJA × PD  
(9)  
TA(MAX) = 150°C – 80.3°C/W × (3.8 V – 3.3 V) × (1 A) = 109.85°C  
(10)  
8.2.3 Application Curve  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
ILOAD = 10 mA  
ILOAD = 100 mA  
ILOAD = 250 mA  
ILOAD = 500 mA  
ILOAD = 1 A  
-10  
10  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
VIN = 3.8 V, VOUT = 3.3 V, COUT = 2.2 µF  
Figure 8-10. PSRR vs Frequency and ILOAD  
9 Power Supply Recommendations  
The TPS745-Q1 is designed to operate from an input voltage supply range from 1.5 V to 6.0 V. The input voltage  
range provides adequate headroom in order for the device to have a regulated output. This input supply must be  
well regulated. If the input supply is noisy, additional input capacitors with low ESR may help improve output  
noise performance. Connect a low output impedance power supply directly to the IN pin of the TPS746-Q1.  
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10 Layout  
10.1 Layout Guidelines  
Place input and output capacitors as close to the device as possible.  
Use copper planes for device connections in order to optimize thermal performance.  
Place thermal vias around the device to distribute heat.  
Place a tented thermal via directly beneath the thermal pad of the DRV or DRB package. An untented via can  
wick solder or solder paste away from the thermal pad joint during the soldering process, leading to a  
compromised solder joint on the thermal pad.  
10.2 Layout Examples  
COUT  
CIN  
1
2
6
5
*
RPG  
Cff  
R1  
3
4
R2  
GND PLANE  
*Pull-up resistor not required for push-pull option  
Signal via to Pin1  
Figure 10-1. Layout Example for the DRV Package  
CIN  
COUT  
1
2
3
4
8
7
6
5
Cff  
R1  
*
RPG  
R2  
GND PLANE  
*Pull-up resistor not required for push-pull option  
Signal via to Pin1  
Figure 10-2. Layout Example for the DRB package  
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11 Device and Documentation Support  
11.1 Device Support  
11.1.1 Device Nomenclature  
Table 11-1. Device Nomenclature  
PRODUCT  
VOUT  
xx(x) is the nominal output voltage. For output voltages with a resolution of 100 mV, two digits are used  
in the ordering number; otherwise, three digits are used (for example, 28 = 2.8 V; 125 = 1.25 V; 01 =  
adjustable).  
P indicates an active output discharge feature. All members of the TPS746 family will actively discharge  
the output when the device is disabled.  
v indicates the topology of the power-good output and the timing associated with the power-good delay.  
If unused, indicates an open-drain power-good output with a 150-µs delay.  
If B, indicates an open-drain, power-good output with a 5-ms delay.  
If C, indicates a push-pull, power-good output with a 150-µs delay.  
TPS746)xx(x)PvQWyyyzQ1  
Q indicates that this device is a Grade-1 device in accordance with the AEC-Q100 standard.  
W indicates the package has wettable flanks.  
yyy is the package designator.  
z is the package quantity. R is for reel (3000 pieces).  
Q1 indicates that this device is an automotive grade (AEC-Q100) device.  
11.2 Documentation Support  
11.2.1 Related Documentation  
For related documentation see the following:  
Texas Instruments, Pros and Cons of Using a Feedforward Capacitor with a Low-Dropout Regulator  
application report  
Texas Instruments, An Empirical Analysis of the Impact of Board Layout on LDO Thermal Performance  
application report  
11.3 Receiving Notification of Documentation Updates  
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on  
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For  
change details, review the revision history included in any revised document.  
11.4 Support Resources  
TI E2Esupport forums are an engineer's go-to source for fast, verified answers and design help — straight  
from the experts. Search existing answers or ask your own question to get the quick design help you need.  
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do  
not necessarily reflect TI's views; see TI's Terms of Use.  
11.5 Trademarks  
TI E2Eis a trademark of Texas Instruments.  
All trademarks are the property of their respective owners.  
11.6 Electrostatic Discharge Caution  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled  
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may  
be more susceptible to damage because very small parametric changes could cause the device not to meet its published  
specifications.  
11.7 Glossary  
TI Glossary  
This glossary lists and explains terms, acronyms, and definitions.  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
31  
Product Folder Links: TPS746-Q1  
 
 
 
 
 
 
 
 
TPS746-Q1  
SBVS358B – JUNE 2018 – REVISED JANUARY 2021  
www.ti.com  
Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
Copyright © 2021 Texas Instruments Incorporated  
32  
Submit Document Feedback  
Product Folder Links: TPS746-Q1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
3-Mar-2021  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
PPS74601PQWDRBRQ1  
PPS74610PQWDRBRQ1  
PPS74611PQWDRBRQ1  
PPS74612PQWDRBRQ1  
PPS74618PQWDRBRQ1  
PPS74633PQWDRBRQ1  
ACTIVE  
SON  
SON  
SON  
SON  
SON  
SON  
DRB  
8
8
8
8
8
8
3000 RoHS (In work)  
& Non-Green  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
-40 to 125  
-40 to 150  
-40 to 150  
-40 to 150  
-40 to 150  
-40 to 150  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
DRB  
3000 RoHS (In work)  
& Non-Green  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
DRB  
3000 RoHS (In work)  
& Non-Green  
DRB  
3000 RoHS (In work)  
& Non-Green  
DRB  
3000 RoHS (In work)  
& Non-Green  
DRB  
3000 RoHS (In work)  
& Non-Green  
TPS74601PBQWDRVRQ1  
TPS74601PCQWDRVRQ1  
TPS74601PQWDRBRQ1  
TPS74601PQWDRVRQ1  
TPS74607PQWDRBRQ1  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
PREVIEW  
WSON  
WSON  
SON  
DRV  
DRV  
DRB  
DRV  
DRB  
6
6
8
6
8
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
Call TI  
Call TI  
NIPDAU  
SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Call TI  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
1S46  
1OZ6  
74601P  
1OW6  
WSON  
SON  
3000 RoHS (In work)  
& Non-Green  
Call TI  
TPS74610PQWDRBRQ1  
TPS74610PQWDRVRQ1  
TPS746115PQWDRBRQ1  
TPS74611PQWDRBRQ1  
TPS74611PQWDRVRQ1  
TPS746125PQWDRBRQ1  
TPS74612PQWDRBRQ1  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
SON  
WSON  
SON  
DRB  
DRV  
DRB  
DRB  
DRV  
DRB  
DRB  
8
6
8
8
6
8
8
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
NIPDAU  
SN  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
74610P  
1SG6  
NIPDAU  
NIPDAU  
SN  
746115  
74611P  
1SH6  
SON  
WSON  
SON  
NIPDAU  
NIPDAU  
746125  
74612P  
SON  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
3-Mar-2021  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
TPS74612PQWDRVRQ1  
TPS746135PQWDRBRQ1  
TPS74613PQWDRBRQ1  
TPS74615PQWDRBRQ1  
TPS74615PQWDRVRQ1  
TPS74617PQWDRBRQ1  
TPS74618PQWDRBRQ1  
TPS74618PQWDRVRQ1  
TPS74625PQWDRBRQ1  
TPS74625PQWDRVRQ1  
TPS74628PQWDRBRQ1  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
PREVIEW  
WSON  
SON  
DRV  
DRB  
DRB  
DRB  
DRV  
DRB  
DRB  
DRV  
DRB  
DRV  
DRB  
6
8
8
8
6
8
8
6
8
6
8
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
SN  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Call TI  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
1SI6  
NIPDAU  
NIPDAU  
NIPDAU  
SN  
746135  
74613P  
74615P  
1SJ6  
SON  
SON  
WSON  
SON  
NIPDAU  
NIPDAU  
SN  
74617P  
74618P  
1SK6  
SON  
WSON  
SON  
NIPDAU  
SN  
74625P  
1SL6  
WSON  
SON  
3000 RoHS (In work)  
& Non-Green  
Call TI  
TPS74628PQWDRVRQ1  
TPS74629PQWDRBRQ1  
ACTIVE  
WSON  
SON  
DRV  
DRB  
6
8
3000 RoHS & Green  
SN  
Level-1-260C-UNLIM  
Call TI  
-40 to 125  
-40 to 125  
1SM6  
PREVIEW  
3000 RoHS (In work)  
& Non-Green  
Call TI  
TPS74629PQWDRVRQ1  
TPS74630PQWDRBRQ1  
TPS74633PCQWDRVRQ1  
TPS74633PQWDRBRQ1  
TPS74633PQWDRVRQ1  
TPS74634PQWDRBRQ1  
TPS74650PQWDRBRQ1  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
WSON  
SON  
DRV  
DRB  
DRV  
DRB  
DRV  
DRB  
DRB  
6
8
6
8
6
8
8
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
SN  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
1SN6  
NIPDAU  
Call TI  
NIPDAU  
SN  
74630P  
1P16  
WSON  
SON  
74633P  
1OX6  
WSON  
SON  
NIPDAU  
NIPDAU  
74634P  
74650P  
SON  
Addendum-Page 2  
PACKAGE OPTION ADDENDUM  
www.ti.com  
3-Mar-2021  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF TPS746-Q1 :  
Catalog: TPS746  
NOTE: Qualified Version Definitions:  
Catalog - TI's standard catalog product  
Addendum-Page 3  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
27-Feb-2021  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TPS74601PBQWDRVRQ WSON  
1
DRV  
DRV  
6
6
3000  
3000  
180.0  
8.4  
2.2  
2.2  
1.2  
4.0  
8.0  
Q2  
TPS74601PCQWDRVRQ WSON  
1
180.0  
8.4  
2.2  
2.2  
1.2  
4.0  
8.0  
Q2  
TPS74601PQWDRVRQ1 WSON  
TPS74610PQWDRVRQ1 WSON  
TPS746115PQWDRBRQ1 SON  
TPS74611PQWDRVRQ1 WSON  
TPS746125PQWDRBRQ1 SON  
TPS74612PQWDRVRQ1 WSON  
TPS746135PQWDRBRQ1 SON  
DRV  
DRV  
DRB  
DRV  
DRB  
DRV  
DRB  
DRB  
DRB  
DRV  
DRB  
DRV  
DRB  
DRV  
DRV  
6
6
8
6
8
6
8
8
8
6
8
6
8
6
6
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
180.0  
180.0  
330.0  
180.0  
330.0  
180.0  
330.0  
330.0  
330.0  
180.0  
330.0  
180.0  
330.0  
180.0  
180.0  
8.4  
8.4  
2.2  
2.2  
3.3  
2.2  
3.3  
2.2  
3.3  
3.3  
3.3  
2.2  
3.3  
2.2  
3.3  
2.2  
2.2  
2.2  
2.2  
3.3  
2.2  
3.3  
2.2  
3.3  
3.3  
3.3  
2.2  
3.3  
2.2  
3.3  
2.2  
2.2  
1.2  
1.2  
1.1  
1.2  
1.1  
1.2  
1.1  
1.1  
1.1  
1.2  
1.1  
1.2  
1.1  
1.2  
1.2  
4.0  
4.0  
8.0  
4.0  
8.0  
4.0  
8.0  
8.0  
8.0  
4.0  
8.0  
4.0  
8.0  
4.0  
4.0  
8.0  
8.0  
Q2  
Q2  
Q2  
Q2  
Q2  
Q2  
Q2  
Q2  
Q2  
Q2  
Q2  
Q2  
Q2  
Q2  
Q2  
12.4  
8.4  
12.0  
8.0  
12.4  
8.4  
12.0  
8.0  
12.4  
12.4  
12.4  
8.4  
12.0  
12.0  
12.0  
8.0  
TPS74613PQWDRBRQ1  
TPS74615PQWDRBRQ1  
SON  
SON  
TPS74615PQWDRVRQ1 WSON  
TPS74617PQWDRBRQ1 SON  
TPS74618PQWDRVRQ1 WSON  
TPS74625PQWDRBRQ1 SON  
12.4  
8.4  
12.0  
8.0  
12.4  
8.4  
12.0  
8.0  
TPS74625PQWDRVRQ1 WSON  
TPS74628PQWDRVRQ1 WSON  
8.4  
8.0  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
27-Feb-2021  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TPS74629PQWDRVRQ1 WSON  
DRV  
DRV  
6
6
3000  
3000  
180.0  
180.0  
8.4  
8.4  
2.2  
2.2  
2.2  
2.2  
1.2  
1.2  
4.0  
4.0  
8.0  
8.0  
Q2  
Q2  
TPS74633PCQWDRVRQ WSON  
1
TPS74633PQWDRVRQ1 WSON  
DRV  
DRB  
DRB  
6
8
8
3000  
3000  
3000  
180.0  
330.0  
330.0  
8.4  
2.2  
3.3  
3.3  
2.2  
3.3  
3.3  
1.2  
1.1  
1.1  
4.0  
8.0  
8.0  
8.0  
Q2  
Q2  
Q2  
TPS74634PQWDRBRQ1  
TPS74650PQWDRBRQ1  
SON  
SON  
12.4  
12.4  
12.0  
12.0  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TPS74601PBQWDRVRQ1  
TPS74601PCQWDRVRQ1  
TPS74601PQWDRVRQ1  
TPS74610PQWDRVRQ1  
TPS746115PQWDRBRQ1  
TPS74611PQWDRVRQ1  
TPS746125PQWDRBRQ1  
TPS74612PQWDRVRQ1  
TPS746135PQWDRBRQ1  
TPS74613PQWDRBRQ1  
TPS74615PQWDRBRQ1  
WSON  
WSON  
WSON  
WSON  
SON  
DRV  
DRV  
DRV  
DRV  
DRB  
DRV  
DRB  
DRV  
DRB  
DRB  
DRB  
6
6
6
6
8
6
8
6
8
8
8
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
200.0  
200.0  
200.0  
200.0  
367.0  
200.0  
367.0  
200.0  
367.0  
367.0  
367.0  
183.0  
183.0  
183.0  
183.0  
367.0  
183.0  
367.0  
183.0  
367.0  
367.0  
367.0  
25.0  
25.0  
25.0  
25.0  
35.0  
25.0  
35.0  
25.0  
35.0  
35.0  
35.0  
WSON  
SON  
WSON  
SON  
SON  
SON  
Pack Materials-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
27-Feb-2021  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TPS74615PQWDRVRQ1  
TPS74617PQWDRBRQ1  
TPS74618PQWDRVRQ1  
TPS74625PQWDRBRQ1  
TPS74625PQWDRVRQ1  
TPS74628PQWDRVRQ1  
TPS74629PQWDRVRQ1  
TPS74633PCQWDRVRQ1  
TPS74633PQWDRVRQ1  
TPS74634PQWDRBRQ1  
TPS74650PQWDRBRQ1  
WSON  
SON  
DRV  
DRB  
DRV  
DRB  
DRV  
DRV  
DRV  
DRV  
DRV  
DRB  
DRB  
6
8
6
8
6
6
6
6
6
8
8
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
200.0  
367.0  
200.0  
367.0  
200.0  
200.0  
200.0  
200.0  
200.0  
367.0  
367.0  
183.0  
367.0  
183.0  
367.0  
183.0  
183.0  
183.0  
183.0  
183.0  
367.0  
367.0  
25.0  
35.0  
25.0  
35.0  
25.0  
25.0  
25.0  
25.0  
25.0  
35.0  
35.0  
WSON  
SON  
WSON  
WSON  
WSON  
WSON  
WSON  
SON  
SON  
Pack Materials-Page 3  
GENERIC PACKAGE VIEW  
DRV 6  
WSON - 0.8 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
Images above are just a representation of the package family, actual package may vary.  
Refer to the product data sheet for package details.  
4206925/F  
PACKAGE OUTLINE  
VSON - 1 mm max height  
DRB0008J  
PLASTIC QUAD FLAT PACK- NO LEAD  
3.1  
2.9  
B
A
PIN 1 INDEX AREA  
3.1  
2.9  
0.1 MIN  
(0.13)  
SECTION A-A  
TYPICAL  
1 MAX  
C
SEATING PLANE  
0.08 C  
0.05  
0.00  
1.75  
1.55  
(0.2) TYP  
6X 0.65  
(0.19)  
4
5
SYMM  
9
2.5  
2.3  
1.95  
1
8
0.36  
0.26  
8X  
PIN 1 ID  
(OPTIONAL)  
0.1  
0.05  
C A B  
C
SYMM  
0.5  
0.3  
8X  
4225036/A 06/2019  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. The package thermal pad must be soldered to the printed circuit board for optimal thermal and mechanical performance.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
VSON - 1 mm max height  
DRB0008J  
PLASTIC QUAD FLAT PACK- NO LEAD  
(2.8)  
(1.65)  
8X (0.6)  
8X (0.31)  
SYMM  
1
8
6X (0.65)  
SYMM  
9
(1.95) (2.4)  
(0.95)  
(R0.05) TYP  
4
5
(Ø 0.2) VIA  
TYP  
(0.575)  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE: 20X  
0.07 MAX  
ALL AROUND  
0.07 MIN  
ALL AROUND  
METAL  
SOLDER MASK  
OPENING  
EXPOSED METAL  
EXPOSED METAL  
SOLDER MASK  
OPENING  
METAL  
NON- SOLDER MASK  
SOLDER MASK  
DEFINED  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4225036/A 06/2019  
NOTES: (continued)  
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature  
number SLUA271 (www.ti.com/lit/slua271).  
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown  
on this view. It is recommended that vias under paste be filled, plugged or tented.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
VSON - 1 mm max height  
DRB0008J  
PLASTIC QUAD FLAT PACK- NO LEAD  
(2.8)  
2X  
(1.51)  
8X (0.6)  
8X (0.31)  
SYMM  
1
8
2X  
(1.06)  
6X (0.65)  
SYMM  
(1.95)  
(0.63)  
9
(R0.05) TYP  
4
5
METAL  
TYP  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
EXPOSED PAD  
81% PRINTED COVERAGE BY AREA  
SCALE: 20X  
4225036/A 06/2019  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
www.ti.com  
IMPORTANT NOTICE AND DISCLAIMER  
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE  
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”  
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY  
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD  
PARTY INTELLECTUAL PROPERTY RIGHTS.  
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate  
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable  
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you  
permission to use these resources only for development of an application that uses the TI products described in the resource. Other  
reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third party  
intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims, damages,  
costs, losses, and liabilities arising out of your use of these resources.  
TI’s products are provided subject to TI’s Terms of Sale (https:www.ti.com/legal/termsofsale.html) or other applicable terms available either  
on ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s  
applicable warranties or warranty disclaimers for TI products.IMPORTANT NOTICE  
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265  
Copyright © 2021, Texas Instruments Incorporated  

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