TPS75103_技术文档

TPS7510x

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SBVS080H –SEPTEMBER 2006–REVISED JANUARY 2010

Low Dropout, Two-Bank LED Driver with PWM Brightness Control

1

FEATURES

DESCRIPTION

2

•

Regulated Output Current with 2% LED-to-LED

Matching

The TPS7510x linear low dropout (LDO) matching

LED current source is optimized for low power

keypad and navigation pad LED backlighting

applications. The device provides a constant current

to up to four unmatched LEDs organized in two banks

of two LEDs each in a common-cathode topology.

Without an external resistor, the current source

defaults to factory-programmable, preset current level

with ±0.5% accuracy (typical). An optional external

resistor can be used to set initial brightness to

user-programmable values with higher accuracy.

Brightness can be varied from off to full brightness by

inputting a pulse width modulation (PWM) signal on

each Enable pin. Each bank has independent enable

and brightness control, but current matching is done

to all four channels concurrently. The input supply

range is ideally suited for single-cell Li-Ion battery

supplies and the TPS7510x can provide up to 25mA

per LED.

Drives Up to Four LEDs at 25mA Each in a

Common Cathode Topology

28mV Typical Dropout Voltage Extends Usable

Supply Range in Li-Ion Battery Applications

•

Brightness Control Using PWM Signals

Two 2-LED Banks with Independent Enable

and PWM Brightness Control per Bank

•

No Internal Switching Signals—Eliminates EMI

Default LED Current Eliminates External

Components

–

Default values from 3mA to 10mA (in 1mA

increments) available using innovative

factory EEPROM programming

–

Optional external resistor can be used for

high-accuracy, user-programmable current

No internal switching signals are used, eliminating

troublesome electromagnetic interference (EMI). The

TPS7510x is offered in an ultra-small, 9-ball, 0.4mm

ball-pitch wafer chip-scale package (WCSP) and a

2,5mm × 2,5mm, 10-pin SON package, yielding a

very compact total solution size ideal for mobile

handsets and portable backlighting applications. The

device is fully specified over T_J= –40°C to +85°C.

•

Over-Current and Over-Temperature

Protection

Available in Wafer Chip-Scale Package

or 2,5mm × 2,5mm SON-10

APPLICATIONS

•

Keypad and Display Backlighting

White and Color LEDs

Cellular Handsets

PDAs and Smartphones

V_BATT

TPS7510x DSK

2,5mm x 2,5mm SON-10

(Top View)

TPS7510x

TPS7510x YFF

9-Ball WCSP

(Top View)

V_IN

D1A

V_ENA

V_ENB

ENA

ENB

D2A

ENB

ENA

D1A

D2A

GND

1

2

3

4

5

10 I_SET

9

8

7

6

V_IN

A3 B3

A2 B2

A1 B1

C3

C2

C1

D1B

D2B

GND

D1B

D2B

NC

I_SET

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

TPS7510x

SBVS080H –SEPTEMBER 2006–REVISED JANUARY 2010

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

ORDERING INFORMATION⁽¹⁾

PRODUCT ID

OPTIONS⁽²⁾

TPS7510x yyyz

X is the nominal default diode output current (for example, 3 = 3mA, 5 = 5mA, and 0 = 10mA).

YYY is the package designator.

Z is the reel quantity (R = 3000, T = 250).

(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI

web site at www.ti.com.

(2) Default set currents from 3mA to 10mA in 1mA increments are available through the use of innovative factory EEPROM programming.

Minimum order quantities may apply. Contact factory for details and availability.

ABSOLUTE MAXIMUM RATINGS⁽¹⁾

Over operating temperature range (unless otherwise noted).

PARAMETER

VALUE

–0.3V to +7.0V

–0.3V to V_IN

35mA

V_INrange

V_ISET, V_ENA, V_ENB, V_DXrange

I_DXfor D1A, D2A, D1B, D2B

D1A, D2A, D1B, D2B short circuit duration

Continuous total power dissipation

Junction temperature (T_J)

Indefinite

Internally limited

–55°C to +150°C

Storage temperature

(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

DISSIPATION RATINGS

DERATING FACTOR

ABOVE

BOARD

Low-K⁽¹⁾

PACKAGE

YFF

R_qJC

R_qJA

T_A= +25°C

4.8mW/°C

7.0mW/°C

17mW/°C

T_A< +25°C

480mW

T_A= +70°C

264mW

T_A= +85°C

192mW

55°C/W

40°C/W

208°C/W

142°C/W

60.6°C/W

YFF

704mW

387mW

282mW

High-K⁽²⁾

DSK

1650mW

908mW

660mW

(1) The JEDEC low-K (1s) board used to derive this data was a 3 inch × 3 inch, two-layer board with 2 ounce copper traces on top of the

board.

(2) The JEDEC high-K (2s2p) board used to derive this data was a 3 inch × 3 inch, multi-layer board with 1 ounce internal power and

ground planes and 2 ounce copper traces on top and bottom of the board.

RECOMMENDED OPERATING CONDITIONS

PARAMETER

MIN

2.7

3

TYP

MAX

5.5

UNIT

V

V_INInput voltage

I_DXOperating current per LED

t_PWMOn-time for PWM signal

25

mA

ms

33

T_JOperating junction temperature range

–40

+85

°C

2

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SBVS080H –SEPTEMBER 2006–REVISED JANUARY 2010

ELECTRICAL CHARACTERISTICS

Over operating junction temperature range (T_J= –40°C to +85°C), V_IN= 3.8V, DxA and DxB = 3.3V, R_SET= 32.4kΩ, and ENA

and ENB = 3.8V, unless otherwise noted. Typical values are at T_A= +25°C.

PARAMETER

TEST CONDITIONS

V_ENA,B= 0V, V_DX= 0V

MIN

TYP

MAX

UNIT

I_SHDN

Shutdown supply current

0.03

1.0

mA

I_SET= open, V_IN= 4.5V

YFF package

170

200

mA

I_GND

Ground current

I_DX= 5mA, V_IN= 3.8V

DSK package

170

2

230

4

mA

%

T_A= +25°C

0

YFF

package

Current matching

(I_DXMAX– I_DXMIN/I_DXMAX) × 100%

5

%

ΔI_D

T_A= –40°C to +85°C

DSK

package

0

6

%

ΔI_DX%/ΔV_IN

Line regulation

3.5V ≤ V_IN≤ 4.5V, I_DX= 5mA

1.8V ≤ V_DX≤ 3.5V, I_DX= 5mA

I_DXnom= 5mA

2.0

0.8

28

%/V

ΔI_DX%/ΔV_DXLoad regulation

Dropout voltage of any

DX current source

(V_DXat I_DX= 0.8 × I_{DX, nom}

100

V_DO

mV

I_DXnom= 15mA

70

)

V_ISET

Reference voltage for current set

1.183

1.225

1.257

3

V

YFF

package

0.5

%

I_SET= open,

V_DX= V_IN– 0.2V

I_OPEN

Diode current accuracy⁽¹⁾

DSK

package

4

%

I_SET

k

I_SETpin current range

2.5

1.2

62.5

mA

I_SETto I_DXcurrent ratio⁽¹⁾

Enable high level input voltage

Enable low level input voltage

420

V_IH

V_IL

V

0.4

6.1

V_ENA= 3.8V

V_ENA= 1.8V

V_ENB= 3.8V

V_ENB= 1.8V

5.0

2.2

4.0

1.8

I_INA

Enable pin A (V_ENA) input current

Enable pin B (V_ENB) input current

mA

4.9

30

I_INB

Delay from ENA and ENB = low to

reach shutdown current

t_SD

Shutdown delay time

5

13

ms

(I_DX= 0.1 × I_{DX, nom}

)

Shutdown, temp increasing

Reset, temp decreasing

+165

+140

T_SD

Thermal shutdown temperature

°C

(1) Average of all four I_DXoutputs.

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TPS7510x

SBVS080H –SEPTEMBER 2006–REVISED JANUARY 2010

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Table 1. Recommended (1% Tolerance) Set Resistor Values

R_SET(kΩ)

511

I_SET(mA)

2.4

I_DX(mA)⁽¹⁾

1.0

255

4.8

2.0

169

7.2

3.0

127

9.6

4.1

102

12.0

14.5

16.7

18.9

21.8

24.0

26.4

29.0

31.3

33.6

36.0

37.8

40.7

42.7

45.9

48.0

50.4

52.8

55.4

57.0

59.8

5.0

84.5

73.2

64.9

56.2

51.1

46.4

42.2

39.2

36.5

34.0

32.4

30.1

28.7

26.7

25.5

24.3

23.2

22.1

21.5

20.5

6.1

7.0

7.9

9.2

10.1

11.1

12.2

13.1

14.1

15.1

15.9

17.1

17.9

19.3

20.2

21.2

22.2

23.3

23.9

25.1

(1) I_DX= (V_SET/R_SET) × k.

4

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SBVS080H –SEPTEMBER 2006–REVISED JANUARY 2010

PIN ASSIGNMENTS

YFF PACKAGE

9-BALL WCSP

(TOP VIEW)

DSK PACKAGE

2,5mm × 2,5mm SON-10

(TOP VIEW)

A3 B3

A2 B2

A1 B1

C3

C2

C1

ENB

ENA

D1A

D2A

GND

1

2

3

4

5

10 I_SET

9

8

7

6

V_IN

GND

D1B

D2B

NC⁽¹⁾

NOTE (1): Not connected

TERMINAL FUNCTIONS

INPUT/

OUTPUT DESCRIPTION

NAME

WCSP

SON

Enable pin, Bank A. Driving this pin high turns on the current source to Bank A

outputs. Driving this pin low turns off the current source to Bank A outputs. An

applied PWM signal reduces the LED current (between 0mA and the maximum

current set by I_SET) as a function of the duty cycle of the PWM signal. ENA and

ENB can be tied together. ENA can be left OPEN or connected to GND if not used.

See the Application Information section for more details.

ENA

A3

2

I

D1A

D2A

B3

C3

3

4

O

Diode source current output, Bank A. Connect to LED anode.

Enable pin, Bank B. Driving this pin high turns on the current source to Bank B

outputs. Driving this pin low turns off the current source to Bank B outputs. An

applied PWM signal reduces the LED current (between 0mA and the maximum

current set by I_SET) as a function of the duty cycle of the PWM signal. ENA and

ENB can be tied together. ENB can be left OPEN or connected to GND if not used.

See the Application Information section for more details.

ENB

A2

1

I

V_IN

B2

C2

9

I

Supply Input

Ground

GND

5, Pad

—

An optional resistor can be connected between this pin and GND to set the

maximum current through the LEDs. If no resistor is connected, I_SETdefaults to the

internally-programmed value.

I_SET

A1

10

O

D1B

D2B

NC

B1

C1

—

8

7

6

O

Diode source current output, Bank B. Connect to LED anode.

Not connected.

—

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TPS7510x

SBVS080H –SEPTEMBER 2006–REVISED JANUARY 2010

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FUNCTIONAL BLOCK DIAGRAM

Controlled Current Source

D1A

D2A

D1B

Control

Logic

ENA

800kW

Controlled Current Source

ENB

Control

Logic

1MW

V_IN

D2B

Controlled Current Source

Int/Ext

Set Current

Sense

I_SET

Current

Reference

GND

6

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SBVS080H –SEPTEMBER 2006–REVISED JANUARY 2010

TYPICAL CHARACTERISTICS

Over operating junction temperature range (T_J= –40°C to +85°C), V_IN= 3.8V, DxA and DxB = 3.3V, R_SET= 32.4kΩ, and ENA

and ENB = high, unless otherwise noted. Typical values are at T_A= +25°C.

LED CURRENT vs DUTY CYCLE (f = 300Hz)

LINE TRANSIENT (600mV Pulse)

25

20

15

10

5

3.9V

1V/div

V_IN

3.6V

0.5mA/div

I_OUT

0

20ms/div

0

10

20

30

40

50

60

70

80

90 100

Duty Cycle (%)

Figure 1.

Figure 2.

LINE TRANSIENT (300mV Pulse)

DIMMING RESPONSE (Both Channels)

1.2V

3.6V

0.4V

1V/div

3.3V

V_IN

1V/div

ENA = ENB

20mA/div

I_OUT

0.5mA/div

I_OUT

20ms/div

Figure 3.

Figure 4.

DIMMING RESPONSE (Single Channel)

OUTPUT CURRENT vs HEADROOM VOLTAGE

25

20

15

10

5

ENA = 3.8V

-40°C

1.2V

0.4V

1V/div

ENB

+25°C

+85°C

20mA/div

I_OUT

0

20ms/div

0

0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20

_IN- V_OUT(V)

V

Figure 5.

Figure 6.

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TPS7510x

SBVS080H –SEPTEMBER 2006–REVISED JANUARY 2010

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TYPICAL CHARACTERISTICS (continued)

Over operating junction temperature range (T_J= –40°C to +85°C), V_IN= 3.8V, DxA and DxB = 3.3V, R_SET= 32.4kΩ, and ENA

and ENB = high, unless otherwise noted. Typical values are at T_A= +25°C.

OUTPUT CURRENT vs R_SET

28

26

24

22

20

18

16

14

12

10

8

28

26

24

22

20

18

16

14

12

10

8

Expanded Range

6

4

2

0

20 60 100 140 180 220 260 300 340 380 420 460 500

20

30

40

50

60

70

80

90

100

5.9

4.0

R_SET(kW)

Figure 7.

Figure 8.

TPS75105 OUTPUT CURRENT vs INPUT VOLTAGE

R_SET= Open

GROUND CURRENT vs INPUT VOLTAGE

180

175

170

165

160

155

5.4

5.3

5.2

+25°C

-40°C

5.1

5.0

4.9

4.8

4.7

4.6

+85°C

+25°C

-40°C

2.5

3.0

3.5

4.0

4.5

5.0

5.5

3.4

3.9

4.4

4.9

5.4

V_IN(V)

Figure 9.

Figure 10.

TPS75105 OUTPUT CURRENT vs TEMPERATURE

R_SET= Open

OUTPUT CURRENT vs OUTPUT VOLTAGE

5.4

20

18

16

14

12

10

8

5.3

I_OUTD1B

I_OUTD2B

5.2

5.1

5.0

4.9

4.8

4.7

4.6

I_OUTD2A

I_OUTD1A

6

+85°C

+25°C

-40°C

4

2

0

-40

-20

0

20

40

60

80 85

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Temperature (°C)

V_OUT(V)

Figure 11.

Figure 12.

8

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SBVS080H –SEPTEMBER 2006–REVISED JANUARY 2010

APPLICATIONS INFORMATION

LIMITATIONS ON LED FORWARD

VOLTAGES

SETTING THE OUTPUT CURRENT LEVEL

The TPS7510x is

a

linear current source

The TPS7510x is a quad matched current source.

Each of the four current source output levels is set by

implementing LDO regulator building blocks.

Therefore, there are some limitations to the forward

(output) voltages that can be used while maintaining

accurate operation. The first limitation is the

maximum LED forward voltage. Because LDO

technology is employed, there is the dropout voltage

to consider. The TPS7510x is an ultra-low dropout

device with typical dropouts in the range of 30mV at

5mA. Care must be taken in the design to ensure that

the difference between the lowest possible input

voltage (for example, battery cut-off) and the highest

possible forward voltage yields at least 100mV of

headroom. Headroom levels less than dropout

decrease the accuracy of the current source (see

Figure 6).

a

single reference current. An internal voltage

reference of 1.225V (nominal) in combination with a

resistor sets the reference current level. This

reference current is then mirrored onto each of the

four outputs with a ratio of typically 420:1. The

resistor required to set the LED current is calculated

using Equation 1:

K ´ V_ISET

R_ISET

=

I_LED

where:

•

K is the current ratio

V_ISETis the internal reference voltage

I_LEDis the desired LED current

(1)

The other limitation to consider is the minimum output

voltage required to yield accurate operation. The

current source employs NMOS MOSFETs, and a

minimum forward LED voltage of approximately 1.5V

on the output is required to maintain highest

accuracy. The TPS7510x is ideal for white LEDs and

color LEDs with forward voltages greater than 1.5V.

This range includes red LEDs that have typical

forward voltages of 1.7V.

For example, to set the LED current level to 10mA, a

resistor value of 51.1kΩ is required. This value sets

up a reference current of 23.9mA (1.22V/51.1kΩ). In

turn, this reference current is mirrored to each output

current source, resulting in an output current of 10mA

(23.9mA × 420).

The TPS7510x offers two methods for setting the

output current levels. The LED current is set either by

connecting a resistor (calculated using Equation 1)

from the I_SETpin to GND, or leaving I_SETunconnected

to employ the factory-programmed R_SETresistance.

The internal programmed resistance is implemented

USE OF EXTERNAL CAPACITORS

The TPS7510x does not require the use of any

external capacitors for stable operation. Nominal

stray and/or power-supply decoupling capacitance on

the input is adequate for stable operation. Capacitors

are not recommended on the outputs because they

are not needed for stability.

using high-precision processing and yields

a

reference current accuracy of 0.5%, nominal.

Accuracy using external resistors is subject to the

tolerance of the external resistor and the accuracy of

the internal reference voltage.

USE OF UNUSED OUTPUTS OR TYING

OUTPUTS TOGETHER

The TPS7510x automatically detects the presence of

an external resistor by monitoring the current out of

the I_SETpin. Current levels in excess of 3mA signify

the presence of an external resistor and the device

uses the external resistor to set the reference current.

If the current from I_SETis less than 3mA, the device

defaults to the preset internal reference set resistor.

The TPS7510x is available with eight preset current

levels, from 3mA to 10mA (per output) in 1mA

increments. Solutions using the preset internal

current level eliminate an external component,

thereby increasing accuracy and reducing cost.

Unused outputs may be left unconnected or tied to

the V_INsupply. While open outputs are acceptable,

tying unused outputs to the V_INsupply increases ESD

protection. Connecting unused output to ground

violates the minimum recommended output voltage,

results in current levels that potentially exceed the

set/preset LED current and should be avoided.

Connecting outputs in parallel is an acceptable way

of increasing the amount of LED current drive. This

configuration is a useful trick when the higher current

level is a multiple of the preset value.

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TPS7510x

SBVS080H –SEPTEMBER 2006–REVISED JANUARY 2010

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USE OF ENABLE PINS FOR PWM DIMMING

LOAD REGULATION

The TPS7510x divides control of the LED outputs into

two banks of two current sources each. Each bank is

controlled by the use of an independent, active-high

enable pin (ENA and ENB). The enable pin can be

used for standard ON/OFF operation of the current

source, driven by standard logic levels from

processor GPIO pins, for example. Drive EN high to

turn on the bank of LEDs; drive EN low to turn off the

bank of LEDs.

The TPS7510x is designed to provide very tight load

regulation. In the case of a fixed current source, the

output load change is a change in voltage. Tight load

regulation means that output voltages (LED forward

voltages) with large variations can be used without

impacting the fixed current being sourced by the

output or the output-to-output current matching. The

permissible variation on the output not only allows for

large variations in white LED forward voltages, but

even permits the use of different color LEDs on

different outputs with minimal effect on output current.

Another use of the enable pin is for LED dimming.

LED brightness is a function of the current level being

driven across the diode and the time that current is

being driven through the diode. The perceived

brightness of an LED can be changed by either

varying the current level or, more effectively, by

changing the time in which that current is present.

When a PWM signal is input into the enable pin, the

duty cycle (high or ON time) determines how long the

fixed current is driven across the LEDs. Reducing or

increasing that duration has the effect of dimming or

brightening the LED, without having to employ the

more complex method of varying the current level.

This technique is particularly useful for reducing LED

brightness in low ambient light conditions, where LED

brightness is not required, thereby decreasing current

consumption. The enable pins can also be used for

LED blinking, varying blink rates based on system

status.

LINE REGULATION

The TPS7510x is also designed to provide very tight

line regulation. This architecture allows for voltage

transient events to occur on the power supply

(battery) without impacting the fixed output current

levels or the output to output current matching. A

prime example of such a supply transient event is the

occurrence of a transmit pulse on the radio of a

mobile handset. These transient pulses can cause

variations of 300mV and 600mV on the supply to the

TPS7510x. The line regulation limitation is that the

lower supply voltage level of the event does not

cause the input to output voltage difference to drop

below the dropout voltage range.

TPS7510x

Although providing many useful applications, PWM

dimming does have a minimum duty cycle required to

achieve the required current level. The recommended

minimum on time of the TPS7510x is approximately

33ms. On times less than 33ms result in reductions in

the output current by not allowing enough time for the

output to reach the desired current level. Also, having

both enables switching together, asynchronously, or

having one enable on at all times, impacts the

minimum recommended on time (see Figure 4 and

Figure 5). If one enable is already on, the speed at

which the other channel turns on is faster than if both

channel were turning on together or if the other

channel is off. Therefore, connecting one enable on

allows for approximately 10ms to 12ms shorter

minimum on times of the switching enable channel.

ENA

ENB

D1A

D2A

D1B

D2B

Dimming PWM

or CPU GPIO

V_IN

Li-Ion

Battery

I_SET

GND

R_SET

(optional)

Figure 13. Typical Application Diagram

Unused enable pins can be left unconnected or

connected to ground to minimize current

consumption. Connecting unused enable pins to

ground increases ESD protection. If connected to V_IN,

a small amount of current drains through the enable

input (see the Electrical Characteristics table).

10

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SBVS080H –SEPTEMBER 2006–REVISED JANUARY 2010

1,213

1,193

1,213

1,193

Figure 14. YFF Wafer Chip-Scale Package Dimensions (in mm)

REVISION HISTORY

space

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision G (March. 2009) to Revision H

Page

•

Added DSK package dissipation information to Dissipation Ratings table ........................................................................... 2

Revised ground current parameter, Electrical Characteristics; changed symbol from I_Qto I_GND; added specifications

for YFF and DSK packages .................................................................................................................................................. 3

•

Added YFF and DSK package specifications for current matching parameter, Electrical Characteristics ........................... 3

Changed diode current accuracy parameter, Electrical Characteristics, to reflect YFF and DSK package

specifications ........................................................................................................................................................................ 3

•

Deleted operating junction temperature range specification from Electrical Characteristics table to eliminate

redundancy ........................................................................................................................................................................... 3

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PACKAGE OPTION ADDENDUM

www.ti.com

25-Jan-2010

PACKAGING INFORMATION

Orderable Device

TPS75103YFFR

TPS75103YFFT

TPS75105DSKR

TPS75105DSKT

TPS75105YFFR

TPS75105YFFT

Status ⁽¹⁾

ACTIVE

Package Package

Pins Package Eco Plan ⁽²⁾Lead/Ball Finish MSL Peak Temp ⁽³⁾

Qty

Type

Drawing

DSBGA

YFF

9

3000 Green (RoHS &

no Sb/Br)

SNAGCU

Level-1-260C-UNLIM

DSBGA

SON

YFF

DSK

YFF

9

250 Green (RoHS &

no Sb/Br)

SNAGCU

Level-1-260C-UNLIM

10

9

3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM

no Sb/Br)

SON

250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM

no Sb/Br)

DSBGA

3000 Green (RoHS &

no Sb/Br)

SNAGCU

Level-1-260C-UNLIM

9

250 Green (RoHS &

no Sb/Br)

SNAGCU

Level-1-260C-UNLIM

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in

a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check

http://www.ti.com/productcontent for the latest availability information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements

for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered

at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and

package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS

compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame

retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3)

MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder

temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is

provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the

accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take

reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on

incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited

information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI

to Customer on an annual basis.

Addendum-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

16-Aug-2011

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

A0

B0

K0

P1

W

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

TPS75103YFFR

TPS75103YFFT

TPS75105DSKR

TPS75105DSKT

TPS75105YFFR

TPS75105YFFT

DSBGA

SON

YFF

DSK

YFF

9

3000

250

180.0

179.0

180.0

8.4

1.45

2.73

1.45

2.73

1.45

0.8

4.0

8.0

Q1

Q2

Q1

10

9

3000

250

SON

DSBGA

3000

250

9

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

16-Aug-2011

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

TPS75103YFFR

TPS75103YFFT

TPS75105DSKR

TPS75105DSKT

TPS75105YFFR

TPS75105YFFT

DSBGA

SON

YFF

DSK

YFF

9

3000

250

210.0

203.0

210.0

185.0

203.0

185.0

35.0

10

9

3000

250

SON

DSBGA

3000

250

9

Pack Materials-Page 2

X: Max = 1.258 mm, Min =1.158 mm

Y: Max = 1.258 mm, Min =1.158 mm

IMPORTANT NOTICE

Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other

changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. Buyers should

obtain the latest relevant information before placing orders and should verify that such information is current and complete. All

semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time

of order acknowledgment.

TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms

and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary

to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily

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TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and

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components to meet such requirements.

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Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265


型号：	TPS75103
厂家：	TEXAS INSTRUMENTS
描述：	Low Dropout, Two-Bank LED Driver with PWM Brightness Control 低压降，两行LED驱动器的PWM亮度控制驱动器
文件：	总19页 (文件大小：588K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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