TPS9125PWR_技术文档

TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

PW PACKAGE

(TOP VIEW)

Integrated SIM Supply and Level Shifters

Selectable 5-V or 3-V SIM Supply Voltage

1

2

3

4

5

6

7

14

13

12

11

10

9

3-V to 5-V Level Shifters, Bidirectional for

SIM Data Line

V

SIMVCC

VCAP1

VCAP2

SIMDATA

GND

DD

RESET

MODE

SIMPWR

DATA

10 kV ESD Protection (HBM) on SIMDATA,

SIMRST, and SIMCLK Terminal

14 Terminal TSSOP

CLK

RST

SIMCLK

SIMRST

Minimum Supply Voltage 2.7 V

8

Integrated PullUp Resistor for DATA and

SIMDATA

Thin Shrink, Small Outline, Left-Hand Tape

and Reel Package

description

The TPS9125 SIM supply and level shifter integrates a programmable 3-V or 5-V SIM supply, conformable to

the (GSM) test specification 11.10, together with either a 3-V or 5-V level shifter, conformable to the GSM

specification 11.11 and 11.12.

A charge pump, utilizing two external capacitors, is configured as voltage doubler to generate a 5-V supply rail

from V . Dependent on the SIM card used, a control signal coming from the SIM card controller is applied on

DD

the MODE terminal to switch between a 3-V or 5-V supply on the SIMVCC output terminal.

A 3-V/5-V bidirectional level shifter translates the 3-V compatible logic signal on DATA terminal into a 5-V

compatible logic signal SIMDATA terminal, and vice versa. RST and CLK are unidirectional level shifters,

providing a 5-V SIMRST and SIMCLK signal from the microcontroller to the SIM card.

TheSIMsupplyisoperatingprovidedSIMPWR=1andV issufficient(>2.7V). Underthiscondition, SIMVCC

DD

voltage is generated by the SIM supply charge pump.

A RESET terminal is provided for security reasons to switch off the SIM supply and interface if the SIM card is

disconnected or removed by accident.

The TSP9125 is packaged in TI’s thin shrink small-outline package (PW).

AVAILABLE OPTIONS

PACKAGE

T

A

(PW)

†

–30°C to 85°C

TSP9125PWR

†

Suffix R stands for left-handed tape and reel.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

TI is a trademark of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

1

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

functional block diagram

V

DD

20 kΩ

OSC

800 kHz

Voltage

Generator

(Charge Pump)

VCAP1

VCAP2

VREF

or

SIMVCC

V

DD

SIMVCC

SIMPWR

MODE

Control

Block

10 kΩ

RESET

Level

ESD

DATA

CLK

RST

SIMDATA

SIMCLK

SIMRST

Shifter

GND

Terminal Functions

TERMINAL

NAME NO.

CLK

I/O

DESCRIPTION

6

5

DI

3-V SIM clock signal. This terminal is connected to the SIM interface and works with 3-V logic level.

DATA

DI/O 3-V bidirectional data line. This terminal is connected to the SIM interface and works with 3-V logic level.

Ground

GND

10

3

MODE

RESET

RST

DI

Programs the SIM supply voltage to SIMV

CC

= 5 V (MODE = 0) or SIMV

= 3 V (MODE = 1).

CC

2

Reset for the TSP9125 SIM supply and interface in case the SIM is removed under operation.

3-V SIM reset signal. This terminal is connected to the SIM interface and works with 3-V logic level.

3-V/5-V SIM clock signal. This terminal is connected to the SIM reader contacts.

7

DI

SIMCLK

SIMRST

SIMDATA

9

DO

8

3-V/5-V SIM reset signal. This terminal is connected to the SIM reader contacts.

11

DI/O 3-V/5-V bidirectional data line. This terminal is connected to the SIM reader contacts.

SIM supply voltage. Can be switched between 5 V ±10% and 3 V ±10%. This terminal is connected to the SIM

reader contacts. Connect a 1 µF ±20% capacitor between SIMVCC and GND.

SIMVCC

14

SIMPWR

VCAP1

VCAP2

4

DI

SIM supply enable terminal. SIMPWR = 0 leaves SIMVCC open, SIMPWR = 1 enables SIM supply.

Charge pump capacitor. Connect 220 nF ±20% capacitor between VCAP1 and VCAP2.

Supply voltage input. Connect a power bypass capacitor of 1 µF between VDD and GND. Connect capacitor

13

12

V

DD

1

physically close to the V

DD

terminal.

2

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TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

detailed description

voltage generator (charge pump)

The voltage generator can be programmed in two modes:

1. SIMPWR = 0: SIMVCC is left open, voltage generator disabled.

2. SIMPWR = 1: Depending on the signal on control terminal MODE, SIMVCC is either programmed to:

a. MODE = 0: 5 V ±10% (this is the default condition under which the system powers up),

or

b. MODE = 1: SIMV

is equal to the supply voltage V

minus a voltage drop of 50 mV maximum.

DD

CC

The setting of the SIMVCC voltage (MODE = 0 or 1) can only be changed when SIMPWR is low. Therefore, as

specified in GSM11.12, supply voltage switching is performed by deactivating the SIM and activating it at the

new supply voltage.

In 5-V mode, a regulated charge pump is used to step-up the 3-V supply rail (min 2.7 V) to the 5-V supply rail.

The voltage generator uses two external capacitors, one pump capacitor connected between VCAP1 and

VCAP2 and one output buffer capacitor connected between SIMVCC and GND. It operates at a nominal

frequency of 800 kHz, and also supplies the integrated level shifters to allow for 5-V compatible logic signals

on SIMRST, SIMCLK, and SIMDATA.

In 3-V mode, the supply voltage V

is connected via an integrated PMOS switch to the SIMVCC output. The

DD

charge pump, oscillator, and voltage reference are disabled in the 3-V mode to reduce power consumption. The

supply voltage of the integrated level shifters is V minus a voltage drop of 50 mV maximum.

DD

control block

The control block uses the three control signals SIMPWR, MODE, and RESET to set the TSP9125 operation

modes.

When SIMPWR is set low, the TSP9125 goes to power-down mode. To comply with the ISO/IEC 7816-3

specification for deactivation of the SIM contacts, the input terminals RST, DATA, and CLK must be low before

the SIMPWR terminal is allowed to be taken low. When SIMPWR is low, the SIMRST, SIMDATA, and SIMCLK

terminals are kept low and SIMVCC is left open.

The RESET input is used to disable the TSP9125 in case the SIM card is removed from the reader under

operation. The input is therefore typically connected to a mechanical or other device used to detect the removal

of the SIM card. When RESET is taken low, the SIMDATA, SIMCLK, and SIMRST terminals are taken low and

SIMVCC is left open, until RESET is taken high again.

Table 1. Control Block Function Table

RESET

MODE SIMPWR

OPERATING MODE

0

1

X

0

X

0

SIM supply disabled; SIMVCC open; SIMRST and SIMCLK and SIMDATA low

TSP9125 in power-down mode. SIM supply disabled; SIMVCC open; SIMRST, SIMCLK, and SIMDATA low;

SIMVCC programmed to 5-V mode.

1

0

1

TSP9125 in power-down mode. SIM supply disabled; SIMVCC open; SIMRST, SIMCLK, and SIMDATA low;

SIMVCC programmed to 3-V mode.

X

TSP9125 in normal operation mode; SIM supply enabled, SIMV = 5 V or 3 V depending on how it was

CC

programmed.

3

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TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

detailed description (continued)

level shifters

The level shifters on TSP9125, when operating in the 5-V mode, convert a 3-V compatible logic signal from a

digital control chip (SIM Controller) into a 5-V compatible logic signal for the SIM Card.

Operating in the 3-V mode, the level shifters are disabled and only pass the signal through.

The level shifters for reset and clock signal are unidirectional (RST to SIMRST, CLK to SIMCLK). The level

shifter for the data signal is bidirectional, enabling signal exchange in both directions (DATA to SIMDATA and

SIMDATA to DATA).

During power up and power down of the TSP9125, the voltage level on the SIMRST, SIMCLK, and SIMDATA

terminals is kept below 0.4 V for currents less than 1 mA flowing into the TSP9125, provided V

is applied.

DD

pullup resistors

The DATA and SIMDATA I/O pullup resistors are integrated in the device. The DATA resistor is 20 kΩ and the

SIMDATA resistor is 10 kΩ.

oscillator

An integrated RC oscillator provides the charge pump with a nominal clock frequency of 800 kHz.

voltage reference

An integrated bandgap reference provides a reference voltage of 1.192 V to the charge pump to control and

regulate the output voltage.

ESD protection

In a cellular telephone (GSM phone) the SIMRST, SIMCLK, and SIMDATA terminals are connected directly to

the contacts of the SIM reader. This means they are accessible from the outside and therefore require increased

ESD protection. The terminals withstand 10 kV ESD when tested according to human body model (HBM),

100 pF through 1500 Ω.

DISSIPATION RATING TABLE

T

< 25°C

OPERATING FACTOR

T = 70°C

A

POWER RATING

A

PACKAGED

POWER RATING

ABOVE T = 25°C

A

PW

556 mW

5.56 mW/°C

306 mW

4

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TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

DISSIPATION DERATING CURVE

vs

FREE-AIR TEMPERATURE

6

5

4

3

2

1

0

R

JA – 180°C/W

th

25

35

45

55

65

75

85

T

A

– Free-Air Temperature – °C

†

absolute maximum ratings over operating free-air temperature (unless otherwise noted)

Supply voltage range, V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3V to 4 V

DD

Input voltage range, all other terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3V to V

Peak output current, SIMV

+ 0.3V

DD

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA

CC

Free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 85°C

Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –60°C to 125°C

Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1 W

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

recommended operating conditions

MIN

NOM

3

MAX

UNIT

V

Supply voltage, V

DD

2.7

3.3

Charge pump capacitor between VCAP1 and VCAP2

Charge pump output capacitor on SIMVCC

Input capacitor on VDD

220

nF

µF

°C

1

0.1

1

Operating free-air temperature range

–30

85

Operating virtual junction temperature range

ESD susceptibility

125

°C

kV

SIMRST, SIMCLK, SIMDATA (human body model, 100 pF through 1500 Ω)

All other terminals (human body model, 100 pF through 1500 Ω)

10 (TBC)

2

5

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TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

electrical characteristics over recommended operating junction temperature range, V

= 3 V,

DD

C

= 220 nF ±20%; C

= 1 µF ±20%; SIMPWR = 1 (unless otherwise noted)

VCAP1/2

SIMVCC

voltage generator charge pump (SIMVCC)

PARAMETER

TEST CONDITIONS

< 3.3 V, = 10 mA,

MIN

TYP

MAX

UNIT

2.7 V < V

DD

SIMCLK

I

SIMVCC

MODE = 0 (default value)

Output voltage at SIMVCC, 5-V mode

Output voltage at SIMVCC, 3-V mode

4.5

5.5

V

f

= 0 MHz,

2.7 V < V

DD

MODE = 1

< 3.3 V,

I = 6 mA,

SIMVCC

V

–50 mV

V

–50 mV

V

DD

Output current at SIMVCC, 5-V mode

(see Note 1)

2.7 V < V

< 3.3 V

10

6

mA

MA

kHz

DD

Output current at SIMVCC, 3-V mode

(see Note 1)

2.7 V < V

Switching frequency (internal oscillator

frequency)

440

800

1160

Output ripple

Startup time

5-V mode,

Standby to 5-V mode

= 10 mA

I

out

= 10 mA

100

1

mV

ms

Power efficiency

I

82.5%

SIMVCC

NOTE 1: The SIM supply circuit is designed according to the GSM specification 11.11 and 11.12 and complies to the requirements of GSM test

specification 11.10. For more information, please see application section.

level shifters (see Note 2)

PARAMETER

TEST CONDITIONS

5-V mode

MIN

1

TYP

MAX

UNIT

5

4

Clock frequency CLK/SIMCLK

MHz

3-V mode

1

5-V mode and 3-V mode,

CLK input 50% duty cycle

Clock duty cycle on SIMCLK

40%

50%

60%

Output load, driver side

70

100

Clk/32

0.4

pF

MHz

V

Data rate on DATA/SIMDATA

Clk/372

Residual voltage at SIMRST, SIMCLK, SIMDATA in powerdown mode SIMPWR = 0, I = 8 µA

–0.4

NOTE 2: The level shifters are designed according to the GSM specification 11.11 and 11.12.

logic inputs (CLK, MODE, RESET, RST, SIMPWR) (see Note 3)

PARAMETER

High-level input voltage

TEST CONDITIONS

MIN

0.7×V

TYP

MAX

UNIT

V

IH

DD

Low-level input voltage

Input capacitance

Input current

0.3×V

DD

V

IL

10

1

pF

–20

–1

–10

Input leakage current

V

= 0.5 V to 3 V

1

IN

NOTE 3: For each state V , V , a positive current is defined as flowing out of the TSP9125.

IH IL

logic output SIMCLK in 3-V mode (according to GSM 11.12) (see Note 4)

PARAMETER

High-level output voltage

TEST CONDITIONS

MIN

0.7×SIMV

0

TYP

MAX

UNIT

V

OH

I

= 20 µA

SIMV

CC

0.2×SIMV

OHmax

CC

Low-level output voltage

= –20 µA

V

OLmax

CC

Rise/fall time SIMCLK (see Note 5)

C

= C

= 100 pF

out

50

ns

in

NOTES: 4. For each state V

, V , a positive current is defined as flowing out of the TSP9125.

OH OL

5. To allow for overshoot the voltage on SIMCLK should remain between –0.3 V and SIMVCC+0.3 V during dynamic operations.

6

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TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

electrical characteristics over recommended operating junction temperature range, V

= 3 V,

DD

C

= 220 nF ±20%; C

= 1 µF ±20%; SIMPWR = 1 (unless otherwise noted) (continued)

VCAP1/2

SIMVCC

logic output SIMCLK in 5-V mode (according to GSM 11.11)

PARAMETER

TEST CONDITIONS

= 20 µA

MIN

0.7×SIMV

0

TYP

MAX

SIMV

CC

UNIT

V

High-level output voltage (see Note 4)

Low-level output voltage (see Note 4)

Rise/fall time SIMCLK (see Note 5 and 6)

I

OH

OHmax

CC

= –200 µA

0.5

18

V

OL

OLmax

t /t

r f

C

= C

= 100 pF, f = 5 MHz

SIMCLK

ns

in

out

NOTES: 4. For each state V , V , a positive current is defined as flowing out of the TSP9125.

OH OL

5. To allow for overshoot the voltage on SIMCLK should remain between –0.3 V and SIMVCC+0.3 V during dynamic operations.

6. The maximum rise/fall time is 9% of the SIMCLK period.

logic output SIMRST in 3-V mode (according to GSM 11.12)

PARAMETER

TEST CONDITIONS

= 200 µA

MIN

0.8×SIMV

0

TYP

MAX

SIMV

CC

UNIT

V

High-level output voltage (see Note 4)

Low-level output voltage (see Note 4)

Rise/fall time SIMRST (see Note 5)

I

OH

OHmax

CC

= –200 µA

0.2×SIMV

V

OL

OLmax

CC

t /t

r f

C

= C

= 100 pF

out

400

µs

in

NOTES: 4. For each state V

, V , a positive current is defined as flowing out of the TSP9125.

OH OL

5. To allow for overshoot the voltage on SIMCLK should remain between –0.3 V and SIMVCC+0.3 V during dynamic operations.

logic output SIMRST in 5-V mode (according to GSM 11.11)

PARAMETER

TEST CONDITIONS

= 200 µA

MIN

TYP

MAX

SIMV

CC

UNIT

V

High-level output voltage (see Note 4)

Low-level output voltage (see Note 4)

Rise/fall time SIMRST (see Note 5)

I

SIMV –0.7V

CC

OH

OHmax

= –200 µA

0

0.6

V

OL

OLmax

t /t

r f

C

= C

= 100 pF

out

400

µs

in

NOTES: 4. For each state V

, V , a positive current is defined as flowing out of the TSP9125.

5. To allow for overshoot the voltage on SIMCLK should remain between –0.3 V and SIMVCC+0.3 V during dynamic operations.

OH OL

logic input/output DATA

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V

High-level input voltage on DATA (see Note 7)

Low-level input voltage on DATA (see Note 7)

High-level output voltage on DATA (see Note 7)

Low-level output voltage on DATA (see Note 7)

0.7×V

V

IH

DD

0.2×V

DD

IL

I

= 20 µA,

V

= 3 V

= 0 V

0.7×V

V

DD

OH

OL

OHmax

SIMDATA

DD

= –1 mA,

V

0

0.4

OLmax

SIMDATA

C

= C

= 100 pF,

out

in

Integrated pullup resistor = 20 kΩ

t /t

r f

Rise/fall time DATA (see Note 5)

1

µs

NOTES: 5. To allow for overshoot the voltage on SIMCLK should remain between –0.3 V and SIMVCC+0.3 V during dynamic operations.

7. For each state V

, V , V , V , a positive current is defined as flowing out of the TSP9125.

OH OL IH IL

7

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

electrical characteristics over recommended operating junction temperature range, V

= 3 V,

DD

C

= 220 nF ±20%; C

= 1 µF ±20%; SIMPWR = 1 (unless otherwise noted) (continued)

VCAP1/2

SIMVCC

logic input/output SIMDATA in 3-V mode (according to GSM 11.12)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

High-level input voltage on SIMDATA

(see Note 7)

V

I

= ±20 µA

0.7×SIMV

SIMV +0.3V

CC

V

IH

IHmax

CC

Low-level input voltage on SIMDATA (see

Note 7)

= 1 mA

–0.3

0.7×SIMV

0

0.2×SIMV

CC

V

IL

ILmax

High-level output voltage on SIMDATA

(see Note 7)

= 20 µA, V

DATA

= 3 V

= 0 V

SIMV

CC

OH

OL

OHmax

OLmax

CC

Low-level output voltage on SIMDATA

(see Note 7)

= –1 mA, V

0.4

1

V

DATA

C

= C

out

= 100 pF,

in

Integrated pullup resistor = 10 kΩ

t /t

r f

Rise/fall time SIMRST (see Note 5)

µs

NOTES: 5. To allow for overshoot the voltage on SIMCLK should remain between –0.3 V and SIMVCC+0.3 V during dynamic operations.

7. For each state V , V , V , V , a positive current is defined as flowing out of the TSP9125.

OH OL IH IL

logic input/output SIMDATA in 5-V mode (according to GSM 11.12)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

High-level input voltage on SIMDATA (see

Note 7)

V

I

= ±20 µA

0.7×SIMV

SIMV +0.3V

CC

V

IH

IHmax

CC

Low-level input voltage on SIMDATA (see

Note 7)

= 1 mA

–0.3

0.7×SIMV

0

0.8

V

IL

ILmax

High-level output voltage on SIMDATA

(see Note 7)

= 20 µA, V

DATA

= 3 V

= 0 V

SIMV

CC

OH

OL

OHmax

OLmax

CC

Low-level output voltage on SIMDATA

(see Note 7)

= –1 mA, V

0.4

1

V

DATA

C

= C

out

= 100 pF,

in

Integrated pullup resistor = 10 kΩ

t /t

r f

Rise/fall time SIMRST (see Note 5)

µs

NOTES: 5. To allow for overshoot the voltage on SIMCLK should remain between –0.3 V and SIMVCC+0.3 V during dynamic operations.

7. For each state V , V , V , V , a positive current is defined as flowing out of the TSP9125.

OH OL IH IL

supply current

PARAMETER

TEST CONDITIONS

SIMPWR = 0

MIN

TYP

MAX

5

UNIT

Powerdown/programming mode

µA

SIMV

= 5 V,

= 3 V,

I

= 0 mA

= 10 mA

= 0 mA

= 6 mA

125

CC

SIMVCC

200

40

Ground current, operating

µA

25

8

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TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

PARAMETER MEASUREMENT INFORMATION

Colck Cycle

50%

SIMVCC

GND

50%

Fall Time

Rise Time

Figure 1. Clock Duty Cycle Measurment

Figure 2. Rise and Fall Time Measurment

TPS9215

SIM

ME

I = NEGATIVE

I = POSITIVE

I = NEGATIVE

Figure 3. Current Direction Convention

V

DD

= 3 V

Input Bypass Capacitor

C3 = 1 µF

1

VDD

1

VCAP1

C1 = 220 nF

12

VCAP2

4

3

2

14

SIMPWR

MODE

SIMVCC

C2 =

1 µF

R

500 Ω

=

O

RESET

SIM Card

Inserted

5

6

7

11

DATA

CLK

RST

SIMDATA

SIMCLK

SIMRST

9

8

GND

10

Figure 4. Parameter Measurment Information

9

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TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

PARAMETER MEASUREMENT INFORMATION

V

DD

= 3 V

1

SIMVCC = 5 V

20 kΩ

VDD

SIMVCC

14

11

VDD

VCC

µC I/O max.

Transfer

Gate

10 kΩ

C = 30 pF

I

5

SIMDATA

DATA

GND

10

Figure 5. Parameter Measurment Information SIMDATA

The rise and fall time on DATA and SIMDATA signals depend on the I/O parameters of the used hardware

(microcontroller and SIM card).

TYPICAL CHARACTERISTICS

Table of Graphs

FIGURE

Charge pump power loss

vs Output current on SIMV

6

7

8

9

CC

Charge pump power efficiency

Charge pump performance

CC

vs Supply voltage V

DD

SIMV

CC

vs Supply voltage V

10

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TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

TYPICAL CHARACTERISTICS

POWER LOSS

vs

CURRENT LOAD

POWER EFFICIENCY

vs

CURRENT LOAD

20

18

90

85

80

T = 27°C

Nominal Models

C

V

= 220 nF

pump

= 1 µF

16

14

12

10

8

sim

= 3 V

DD

Theoretical Limit

Charge Pump

6

T = 27°C

Nominal Models

75

70

Theoretical Limit

4

C

V

= 220 nF

= 1 µF

= 3 V

pump

sim

DD

2

0

1

2

3

4

L

5

6

7

8

9

10

0

1

2

3

4

load

5

6

7

8

9

10

L

– mA

load

Figure 6

Figure 7

5V OUTPUT STARTUP

vs

SUPPLY VOLTAGE

POWER EFFIENCY

vs

SUPPLY VOLTAGE

5.5

90

85

80

SIMVCC = 1 µF

= 220 nF

C

pump

= 10 mA

L

load

Theoretical Limit

T

A

= –40°C

5

Charge Pump

T

A

= 27°C

4.5

T

= 100°C

T = 27°C

Nominal Models

A

75

70

C

= 220 nF

pump

= 1 µF

sim

= 10 mA

I

O

4

2.5 2.6 2.7 2.8 2.9

3

3.1 3.2 3.3 3.4 3.5

2.5 2.6 2.7 2.8 2.9

3

3.1 3.2 3.3 3.4 3.5

V

DD

Supply Voltage - V

V

DD

Supply Voltage - V

Figure 8

Figure 9

11

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

THERMAL INFORMATION

Implementation of integrated circuits in low profile and fine-pitch surface-mount packages requires special

attention to power dissipation. Many system-dependent issues such as thermal coupling, airflow, added heat

sinks and convection surfaces, as well as the presence of other heat-generating components, affect the

power-dissipation limits of a given component.

Three basic approaches for enhancing thermal performance are listed below.

Improving the power dissipation capability of the PWB design

Improving the thermal coupling of the component to the PWB

Introducing airflow in the system

Using the given R

T

for this IC, the maximum power dissipation can be calculated with the equation:

θJA

T

A

J(MAX)

R

P

D(MAX)

JA

5 V MODE SIMVCC OUTPUT

vs

FREE-AIR TEMPERATURE

5.040

5.035

5.030

5.025

5.050

–10

0

10 20 30 40 50 60 70 80 90

T

A

– Free-Air Temperature – °C

Figure 10

12

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

APPLICATION INFORMATION

charge pump terminal

The charge pump can be used to generate a negative voltage from a positive supply voltage, or to

voltage-double, triple, or otherwise multiply the supply voltage. In the TSP9125, a charge pump is used to

generate a 5-V supply rail from an input voltage of 3 V.

Figure 11 is used to explain the principle of a charge pump when configured as a voltage doubler.

1

S3

S1

SIMVCC

V

DD

VCAP1

C2

C1

GND

S2

S4

V

DD

GND

VCAP2

OSC

Figure 11. Principal of a Charge Pump Configured as a Voltage Doubler

During the first half of the oscillator period, switches S1 and S2 are closed, switches S3 and S4 are open, and

the pump capacitor C1 is charged. In the second half of the oscillator period, switches S3 and S4 are closed

and switches S1 and S2 are open. Immediatetly after closing the switches S3 and S4, the voltage at Node 1

is:

V

≈ 2

V

1

DD

C1

DD

assuming C1 was charged up to V . In this half of the period, the pump capacitor C1 charges the output

DD

capacitor C2. After the start-up time, the output capacitor C2 is charged up to V and the voltage at SIMVCC

1

is stable at this value, with only a small amount of ripple, which is normally around 1% of the supply voltage.

The ripple depends on the oscillator frequency, the load on SIMVCC, and the size of output capacitor C2.

In practice, the voltage V is a little bit less than 2 × V

switching losses in capacitor C1.

because of conduction losses across the switches and

1

DD

An unregulated charge pump generates an output voltage that is only dependent on the supply voltage and the

output current.

voltage generator

The charge pump used in the TSP9125 is regulated in such a way that the output voltage stays at 5 V ± 10%,

independently of the supply voltage and output current. A two-point regulator scheme was used to control the

output voltage. In addition, it reduces power consumption. The charge pump is active and enabled as long as

an oscillator frequency is applied. Figure 11 shows the functional block diagram of the voltage generator.

13

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TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

APPLICATION INFORMATION

C1

VCAP2

VCAP1

V

DD

MODE

T1

OSC

Charge Pump

1

T2

SIMPWR

SIMVCC

C2

GND

VREF

1.192 V

Control

Logic

Mode

TPS9125

Figure 12. Functional Block Diagram of the Voltage Generator

When the TSP9125 is programmed in 5-V mode, the voltage at SIMVCC is monitored and regulated. If the

voltage of SIMVCC exceeds a defined upper threshold, the charge pump is switched off by disabling the

oscillator. In this state, all switching losses are zero, and the load is supplied only from the output capacitor C2.

The charge pump and oscillator are reactivated if the voltage at SIMVCC drops below a defined lower threshold.

In this state, the charge pump recharges output capacitor C2 until the voltage across C2 again exceeds the

defined upper threshold. Figure 12 shows the waveform of the charge pump output SIMVCC in 5-V mode.

Using this control mechanism, the switching losses of the charge pump and the losses of the oscillator are

minimized, because the charge pump and the oscillator are only activated when they are needed.

SIMVCC

Charge Pump

Enabled

Charge Pump

Disabled

Upper Threshold

Lower Threshold

Regulator

Hysteresis

max. 100 mV

Time

Figure 13. Typical Waveform at Charge Pump Output SIMV

in 5-V Mode

CC

14

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

APPLICATION INFORMATION

VOLTAGE OUTPUT

vs

SIM CLOCK FREQUENCY

4.9

4.8

V

DD

= 3.3 V

4.7

4.6

4.5

4.4

V

= 2.8 V

DD

V

DD

= 2.7 V

4.3

4.2

4.1

4

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

SIM Clock Frequency – MHz

Figure 14. Voltage At SIMV

vs Frequency at SIMCLK Terminal in 5-V Mode

CC

Figure 14 shows the output voltage on SIMVCC in 5-V mode versus the frequency of the clock signal on

CLK/SIMCLK dependent on the input voltage V . The load on the charge pump is the sum of the maximum

DD

dc load on SIMVCC (10 mA) and the ac load of 100 pF on SIMCLK buffer.

In 3 V mode, the charge pump and oscillator are disabled all the time, thus reducing power dissipation to a

minimum. Switches T1 and T2 in Figure 14 directly connect the supply voltage on VDD to SIMVCC; the voltage

on SIMVCC is therefore equal to the supply voltage V

minus the conduction losses across the switches.

DD

dimensioning of the capacitors

output capacitor C2

The value of output capacitor C2 depends on the maximum charge pump load current, the allowed ripple on

SIMVCC, and the charge pump operating frequency.

In 5-V mode, the charge pump also supplies the drivers of the 5-V level shifters. The maximum load current the

charge pump has to provide is therefore the sum of the dc output current at SIMVCC and the ac supply current

for the level shifters; the SIMCLK driver is the major contributor to this ac load:

I

10 mA 6 mA

16 mA

LOADmax

SIMVCCmax

ACmax

The minimum, theoretical required value for C2 can be calculated using the equation below:

I

ƒ

I

LOADmax

16 mA

2 440 kHz

C2

185 nF

min

V

2

ƒ

100 mV

ripple

OSC

As described above, the regulated charge pump is disabled during the time in which the voltage across the

output capacitor C2 is above the lower threshold voltage, and therefore high enough to ensure the specified

minimum voltage on SIMVCC.

15

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TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

APPLICATION INFORMATION

output capacitor C2 (continued)

Increasing the value of the capacitor C2 will increase the time the charge pump is disabled. The power

consumption of the charge pump will be reduced, because the active time in which switching losses occur is

shorter. However, a larger value of C2 also results in a longer start-up time for the 5-V supply. Based on the

above considerations a 1 µF capacitor is recommended for C2.

pump capacitor C1

The value of pump capacitor C1 has a big impact on the start-up time of the charge pump: this is the time needed

to charge the output capacitor C2 from 0 V up to 5 V. The recommended value for capacitor C1 is 220 nF, thus

ensuring a start-up time of less than 1ms. If a lower value for capacitor C1 is chosen, the start-up time will

increase.

input capacitor

During the activation time of the charge pump there are steep current slopes of about 40 mA on the supply input

V

. Therefore, it is recommended to use a low ESR 1 µF capacitor, such as a multilayer ceramic or tantalum

DD

capacitor, on the V

terminal.

DD

capacitor selection

The exact capacitance value of the capacitors used is not as critical as the use of high quality and low ESR

(equivalent serial resistance) capacitors, such as multilayer ceramic or tantalum capacitors.

The ESR of C1 causes a voltage drop during charging and discharging, and this degrades the performance of

the charge pump. Low ESR is most critical for the choice of capacitor C1, because the charge current of this

capacitor is twice as much as the load current and the current through output capacitor C2. If a tantalum

capacitor is used for C1, the positive terminal should be connected to VCAP1.

The ESR of output capacitor C2 increases the ripple on SIMVCC. The ESR of C2 has only a minor influence,

because the ripple on SIMVCC in the TSP9125 is fixed at maximum 100 mV, due to the two-point regulation

scheme used. If a tantalum capacitor is used for C2, the positive terminal should be connected to SIMVCC.

pulsed output current

To comply with GSM test specification 11.10, paragraph 27.17.2.1.2, the SIMVCC supply voltage must stay

above the minimum allowed voltage level when spikes in the current consumption of the card occur. For a 5-V

SIM card interface, those spikes are up to a maximum charge of 40nAs. To test for this requirement, current

pulses of maximum 400 ns duration and maximum 200 mA amplitude are drawn from SIMVCC. For a 3-V SIM

card interface, those spikes are up to a maximum 12 mA charge. To test for this requirement, current pulses

of maximum 400ns duration and maximum 60-mA amplitude are drawn from SIMVCC.

In 5-V mode (MODE = 0), SIMV

must stay above 4.5 V, in 3-V mode (MODE = 1), it must stay above 2.7 V.

CC

Because the TSP9125 charge pump itself is too slow to counteract these peaks, the correct combination of

capacitors on SIMVCC must be chosen to cope with these requirements. In addition to the 1 µF ±20% low ESR

ceramic capacitor used to buffer the SIMVCC output, it is recommended to connect a 100 nF ceramic capacitor

as close as possible to the contacting elements.

16

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TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

APPLICATION INFORMATION

enabling and disabling the TSP9125

The TSP9125 meets the deactivation requirements according to GSM 11.11 paragraph 4.3.2, and

ISO/IEC 7816-3 paragraph 5.4. These specifications define that the I/O line of the SIM card must be pulled low

before the supply voltage of the SIM card is deactivated. In 3-V and 5-V mode, the SIMDATA terminal of the

TSP9125 is pulled low before SIMVCC is disabled.

During normal operation mode (3-V or 5-V) the SIMPWR and RESET inputs must be high. If one of these

terminals is switched low, the supply of the SIM card is deactivated. In Figure 15 and Figure 16, the SIMPWR

terminal is pulled low. The I/O line of the SIM card (SIMDATA) is pulled low immediately although DATA is high,

whereas the supply voltage on SIMVCC decreases to approximately 2 V quickly and then needs about 100 ms

to reach 0 V. Thus, when the operating mode is changed from the 5-V tsupply to the 3-V supply, the voltage on

SIMVCC is decreased to a level below the supply voltage V

to prevent reverse current flow.

DD

In Figure 15 to Figure 17, the RESET terminal is pulled low externally. Also in this situation, SIMDATA goes low

immediately although the input signal at DATA is high.

SIMPWR

R1

SIMDATA

R3

5 V

SIMVCC

0 V

Figure 15. Powerdown Characteristic in 5-V mode vs Time: 50 µs/div

17

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TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

APPLICATION INFORMATION

SIMPWR

SIMDATA

R1

R3

5 V

SIMVCC

0 V

Figure 16. Power-Down Characteristic in 5-V Mode vs Time: 20 ms/div

RESET

R3

SIMDATA

R1

5 V

SIMVCC

0 V

Figure 17. Reset Characteristic in 5-V Mode vs Time: 50 ms/div

18

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

APPLICATION INFORMATION

RESET

R3

R2

SIMDATA

5 V

SIMVCC

0 V

Figure 18. Reset Characteristic in 5-V Mode vs Time: 20 µs/div

5 V MODE SIMVCC OUTPUT

OSCILLATOR FREQUENCY

vs

LOAD CURRENT

SIM CLOCK FREQUENCY

5.06

5.05

5.04

750

740

730

5 V Mode,

SIMVCC = 10 mA,

SIMCLK = 5 MHz,

SIMDATA = 156 kHz

720

710

700

690

680

670

5.03

5.02

660

650

0

2

4

6

8

10

12

0

1

2

3

4

5

Load Current – mA

SIM Clock Frequency – MHz

Figure 19

Figure 20

19

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TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

APPLICATION INFORMATION

5 V OUTPUT STARTUP

5 V OUTPUT SHUTDOWN

vs

TIME

vs

TIME

6

5

4

3

2

1

0

6

5

4

3

2

1

0

Load = 10 mA

0

0.2

0.4

0.6

0.8

1

1.2

0

2

4

6

t – Time – ms

Figure 21

Figure 22

3 V OUTPUT SHUTDOWN

3 V OUTPUT STARTUP

vs

TIME

vs

TIME

3.5

3

3.5

3

2.5

2

2.5

2

1.5

1

1.5

1

0.5

0

0.5

0

1

3

4

5

6

0

0.1

0.2

0.3

0.4

0.5

0.6

t – Time – ms

Figure 23

Figure 24

20

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

APPLICATION INFORMATION

VOLTAGE OUTPUT

vs

SIM CLOCK FREQUENCY

VOLTAGE OUTPUT

vs

LOAD CURRENT

2.95

2.93

2.91

2.89

3.10

3.05

3

3 V Mode SIMVCC

2.95

2.90

2.87

2.85

0

1

2

3

4

5

0

2

4

6

SIM Clock Frequency – MHz

Load Current – mA

Figure 25

Figure 26

21

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

APPLICATION INFORMATION

Input Bypass Capacitor

C3 = 1 µF

1

V

DD

13

VCAP1

C1 = 220 nF

12

VCAP2

4

3

2

14

V

CC

SIMPWR

MODE

SIMVCC

V

CC

C2 = 1 µF

C4 = 100 nF

RESET

SIM Card

Inserted

µC or

Dedicated

SIM Controller

SIM Card

5

6

7

11

DATA

CLK

RST

SIMDATA

SIMCLK

SIMRST

I/O

9

8

CLK

RST

GND

10

Figure 27. Typical Application

22

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TPS9125

5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS

SLVS244A – SEPTEMBER 1999 – REVISED NOVEMBER 1999

MECHANICAL DATA

PW (R-PDSO-G**)

PLASTIC SMALL-OUTLINE PACKAGE

14 PINS SHOWN

0,30

0,19

M

0,10

0,65

14

8

0,15 NOM

4,50

4,30

6,60

6,20

Gage Plane

0,25

1

7

0°-8°

A

0,75

0,50

Seating Plane

0,10

0,15

0,05

1,20 MAX

PINS **

8

14

16

20

24

28

DIM

3,10

2,90

5,10

4,90

5,10

4,90

6,60

6,40

7,90

7,70

9,80

9,60

A MAX

A MIN

4040064/F 01/97

NOTES: A. All linear dimensions are in millimeters.

B. This drawing is subject to change without notice.

C. Body dimensions do not include mold flash or protrusion not to exceed 0,15.

D. Falls within JEDEC MO-153

23

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

IMPORTANT NOTICE

Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue

any product or service without notice, and advise customers to obtain the latest version of relevant information

to verify, before placing orders, that information being relied on is current and complete. All products are sold

subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those

pertaining to warranty, patent infringement, and limitation of liability.

TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in

accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent

TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily

performed, except those mandated by government requirements.

CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF

DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL

APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR

WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER

CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO

BE FULLY AT THE CUSTOMER’S RISK.

In order to minimize risks associated with the customer’s applications, adequate design and operating

safeguards must be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent

that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other

intellectual property right of TI covering or relating to any combination, machine, or process in which such

semiconductor products or services might be or are used. TI’s publication of information regarding any third

party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.


型号：	TPS9125PWR
厂家：	TEXAS INSTRUMENTS
描述：	5 V/3 V SIM SUPPLY AND LEVEL SHIFTERS 5 / 3V SIM电源和电平转换器转换器电平转换器稳压器开关式稳压器或控制器电源电路开关式控制器光电二极管
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