TRF1600DRVR [TI]
TRUE RMS RF POWER DETECTOR; 真正的RMS RF功率检波器
| 型号： | TRF1600DRVR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | TRUE RMS RF POWER DETECTOR |
| 文件： | 总15页 (文件大小：348K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TRF1600
www.ti.com
SPAS094A –FEBRUARY 2010–REVISED MAY 2011
TRUE RMS RF POWER DETECTOR
Check for Samples: TRF1600
1
FEATURES
•
•
Operating Temperature Range:
–20ºC to 85ºC
•
•
•
RF True RMS Power Detector
Small 2-mm x 2-mm QFN 6 Pin Package
RMS to DC Conversion Up to 2 GHz
Waveform and Modulation Independent
(CW, GSM, WCDMA, TDMA, HSUPA)
APPLICATIONS
•
•
•
Cellular Handsets (GSM, CDMA, TDMA)
Power Amplifier Control Loops
•
•
Linear-In-dB Output
Input Dynamic Range of 28 dB
(–29 dBm to –1 dBm)
Transmitter Power Measurement and Control
•
•
•
External Input Pin
6.7-mA Typical Operating Current
5-µA Maximum Shutdown Current
DESCRIPTION
The TRF1600 is a true RMS power detector with a 28-dB dynamic input range and a linear-to-dB DC output. It is
intended for use in wireless handheld devices such as cell phones and PDAs to measure and control PA output
power accurately independent of the modulation scheme.
The device is designed to operate off of a lithium-ion battery (2.7 V to 5.5 V, 6 V tolerant) or a regulated supply.
A low input signal at the enable pin puts the device in shut-down mode and supply current consumption is
reduced to <5 µA. When asserted high the device enters active mode and outputs a DC voltage proportional to
the RMS value of the input power expressed in dBm.
Table 1. ORDERING INFORMATION(1)
TA
PACKAGE(2)
ORDERABLE PART NUMBER
–20ºC to 85ºC
DRV
TRF1600DRVR
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2010–2011, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TRF1600
SPAS094A –FEBRUARY 2010–REVISED MAY 2011
www.ti.com
BLOCK DIAGRAM
EN
VBAT
Voltage
Regulator
en
RFIN
VOUT
CIN*
RMS Detector
GND
CF
C
FILTER
*
CIN may be omitted if the DC level of the RF input signal is at ground.
2
Copyright © 2010–2011, Texas Instruments Incorporated
TRF1600
www.ti.com
SPAS094A –FEBRUARY 2010–REVISED MAY 2011
PINOUT
6
1
2
3
RFIN
VBAT
5
GND
EN
VOUT
4
CF
Table 2. TERMINAL FUNCTIONS
TERMINAL
I/O
DESCRIPTION
NAME
RFIN
GND
VOUT
CF
NO.
1
I
RF input
2
Ground
3
O
I
Output of the device
4
Filter capacitor. Pin needs to be connected to an off-chip filter capacitor in the application.
EN
5
I
Enable pin/Vprog
VBAT
6
Input supply pin to the device
Copyright © 2010–2011, Texas Instruments Incorporated
3
TRF1600
SPAS094A –FEBRUARY 2010–REVISED MAY 2011
www.ti.com
ABSOLUTE MAXIMUM RATINGS(1)
All voltages values are with respect to GND. Over operating free-air temperature range (unless otherwise noted).
VALUE
UNIT
V
Unregulated input battery voltage
EN
-0.5 to 6.0
-0.5 to 3.6
-0.5 to 3.6
6
V
VOUT
V
PRFIN (max RF input power)
Thermal resistance, junction to ambient
Continuous power dissipation
dBm
°C/W
mW
θJA
140
PD
50
HBM (human body model)
CMD (charged device model)
IEC Contact – VCC pin(2)
IEC Air – VCC pin(2)
2k
500
ESD integrity
V
8k
15k
TA
TJ
TS
Operating ambient temperature
Operating junction temperature
Storage temperature
–40 to 125
125
°C
°C
°C
–40 to 125
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) IEC ESD tests performed on VCC pin with five shunt capacitors ranging from 10 pF to 10 µF. This is meant to evaluate the performance
of the device when it is powered directly from a battery with these capacitors used as bypass capacitors on the same PC board.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
2.7
800
0
NOM
MAX
5.5
UNIT
V
VBAT
fIN
Unregulated input battery voltage
Input frequency range
EN pin voltage
2000
3.3
MHz
V
PD
TA
Continuous power dissipation
Operating ambient temperature
CFILTER
35
mW
°C
–20
85
0
3000
pF
ELECTRICAL CHARACTERISTICS
VBAT = 3.0 ±5%, TA = –20 to 85ºC, CFILTER = 820 pF ±10%, unless otherwise specified.
PARAMETER
SUPPLY CURRENT
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VBAT
Battery voltage
Supply current
2.7
5.5
8.5
V
IBAT, ACTIVE
EN = HIGH
6.7
mA
EN = LOW
RF input power present
IBAT, IDLE
IBAT, S/D
Supply current, idle
10
5
µA
µA
EN = LOW
No RF input power present
Supply current, shutdown
INPUT
fIN
Input frequency
800
–34
–29
2000
–1
MHz
dBm
dBm
PRFIN800
PRFIN2000
OUTPUT
VOUT Max
VOUT Max
VOUT No RF
VOUT Range
Input power, 800 MHz
Input power, 2 GHz
Referred to 50-Ω Zin
Referred to 50-Ω Zin
–1
Output voltage maximum
Output voltage maximum
Output voltage no RF
Output voltage range
–1 dBm, 800 MHz
–1 dBm, 2 GHz
1.2
1
1.55
1.32
160
1.7
1.55
300
V
V
No RF present
0
mV
V
Over specified dynamic range
1.27
4
Copyright © 2010–2011, Texas Instruments Incorporated
TRF1600
www.ti.com
SPAS094A –FEBRUARY 2010–REVISED MAY 2011
ELECTRICAL CHARACTERISTICS (continued)
VBAT = 3.0 ±5%, TA = –20 to 85ºC, CFILTER = 820 pF ±10%, unless otherwise specified.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VOUT,GAIN
Output voltage gain
30
35
40
mV/dB
10-dB log conformance error
over temperature(1)
See Appendix A.1
–1
1
dB
1-dB log conformance error
Straight line 5-dB step error(2)
Ideal 1-dB power step
See Appendix A.2
–0.3
0.3
dB
dB
0.06
0.1
Anywhere in dynamic range. (AM
modulation 100% modulation depth
with a 1-MHz tone)
Output variation due to
modulation at same input power
0.35
dB
Response temperature
coefficient(1)
PRFIN = –4 dBm
See Appendix A.3
TCVOUT
2.2
4.1
mdB/°C
mdB/°C
Response temperature
PRFIN = –4 dBm
See Appendix A.3
ΔTCVOUT
sensitivity spread - 1σ(1)
Output voltage repeatability over
temperature(1)
ΔVOUT_TEMP
PSRR
0.04
0.11
200
dB
dB
Power supply rejection ratio
VBAT = 2.7 V to 5.5 V
30
Integrated over bandwidth
1 kHz – 6.5 kHz
VOUT, NOISE
Output referred noise
100
9
µVRMS
ROUT, EN1
IOUT, EN0
Output impedance
Output leakage
EN = HIGH
EN = LOW
50
3
Ω
µA
EN = HIGH
PRFIN = MAX
VOUT 10% to 90%
Sampling time
(time to valid output)
tSAMPLE
13
13
µs
µs
EN LOW to HIGH
No RF input
tWAKEUP
Wakeup time
VOUT to 90%
LOGIC LEVEL INPUTS (EN)
VIL
Input low level
Input high level
Input bias current
0.6
1
V
V
VIH
1.1
IIH, IIH
–1
µA
(1) Parameters require temperature testing. Limits based on 3σ statistics characterized on a limited number of samples. Limits not
guaranteed in production.
(2) Limits based on 3σ statistics characterized on a limited number of samples. Limits not guaranteed in production.
Copyright © 2010–2011, Texas Instruments Incorporated
5
TRF1600
SPAS094A –FEBRUARY 2010–REVISED MAY 2011
www.ti.com
TYPICAL PERFORMANCE CHARACTERISITICS
CURRENT CONSUMPTION
vs
RF INPUT REFLECTION COEFFICIENT
(800 MHz TO 2 GHz)
TEMPERATURE
8.5
8
7.5
7
6.5
6
5.5
-20
-5
10
25
40
55
70
85
Temperature (oC)
Figure 1.
Figure 2.
OUTPUT VOLTAGE
vs
OUTPUT VOLTAGE
vs
INPUT POWER AT 800 MHz
INPUT POWER AT 2 GHz
2
1.5
1
2
1.5
1
8 5 C
85 C
25 C
-20 C
2 5 C
-20 C
0.5
0.5
0
0
-30
-25
-20
-15
-10
-5
0
-35
-30
-25
-20
-15
-10
-5
0
Pin (dBm)
Pin (dBm)
Figure 3.
Figure 4.
6
Copyright © 2010–2011, Texas Instruments Incorporated
TRF1600
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SPAS094A –FEBRUARY 2010–REVISED MAY 2011
1-dB LOG CONFORMANCE ERROR AT 800 MHz
1-dB LOG CONFORMANCE ERROR AT 2 GHz
0.3
0.2
0.3
0.2
8 5 C
2 5 C
-20 C
85 C
25 C
-20 C
0.1
0.1
0
0
-0.1
-0.2
-0.3
-0.1
-0.2
-0.3
-35
-30
-25
-20
-15
-10
-5
0
-30
-25
-20
-15
-10
-5
0
Pin (dBm)
Pin (dBm)
Figure 5.
Figure 6.
10-dB LOG CONFORMANCE ERROR AT 800 MHz
0.5
85 C
10-dB LOG CONFORMANCE ERROR AT 2 GHz
0.5
85 C
-20 C
-20 C
0.25
0.25
0
0
-0.25
-0.5
-0.25
-0.5
-20
-15
-10
-5
0
-25
-20
-15
-10
-5
0
Pin (dBm)
Pin (dBm)
Figure 7.
Figure 8.
DEVIATION DUE TO MODULATION
DEVIATION DUE TO MODULATION
(Reference Measurement Channel 12.2,
(Reference Measurement Channel 12.2,
3GPP TS 34.121-1 V8.7.0, Table C2.1.1, 800 MHz)
3GPP TS 34.121-1 V8.7.0, Table C2.1.1, 2 GHz
0.2
0.2
0.15
0.1
85 C
25 C
-2 0 C
85 C
25 C
-20 C
0.15
0.1
0.05
0
0.05
0
-0.05
-0.1
-0.15
-0.2
-0.05
-0.1
-0.15
-0.2
-35
-30
-25
-20
-15
-10
-5
0
-30
-25
-20
-15
-10
-5
0
Pin (dBm)
Pin (dBm)
Figure 9.
Figure 10.
Copyright © 2010–2011, Texas Instruments Incorporated
7
TRF1600
SPAS094A –FEBRUARY 2010–REVISED MAY 2011
www.ti.com
DEVIATION DUE TO MODULATION
(HS-DPCCH, 3GPP TS 34.121-1 V8.7.0,
Table C10.1.4, Subtest 1, 800 MHz)
DEVIATION DUE TO MODULATION
(HS-DPCCH, 3GPP TS 34.121-1 V8.7.0,
Table C10.1.4, Subtest 1, 2 GHz)
0.2
0.2
0.15
0.1
8 5 C
85 C
25 C
-2 0 C
2 5 C
0.15
-20 C
0.1
0.05
0
0.05
0
-0.05
-0.1
-0.15
-0.2
-0.05
-0.1
-0.15
-0.2
-35
-30
-25
-20
-15
-10
-5
0
0
0
-30
-25
-20
-15
-10
-5
0
Pin (dBm)
Pin (dBm)
Figure 11.
Figure 12.
DEVIATION DUE TO MODULATION
(HS-DPCCH, 3GPP TS 34.121-1 V8.7.0,
Table C10.1.4, Subtest 2, 800 MHz)
DEVIATION DUE TO MODULATION
(HS-DPCCH, 3GPP TS 34.121-1 V8.7.0,
Table C10.1.4, Subtest 2, 2 GHz)
0.2
0.15
0.1
0.2
0.15
0.1
85 C
25 C
-2 0 C
85 C
25 C
-20 C
0.05
0
0.05
0
-0.05
-0.1
-0.15
-0.2
-0.05
-0.1
-0.15
-0.2
-30
-25
-20
-15
-10
-5
0
-35
-30
-25
-20
-15
-10
-5
Pin (dBm)
Pin (dBm)
Figure 13.
Figure 14.
DEVIATION DUE TO MODULATION
(HS-DPCCH, 3GPP TS 34.121-1 V8.7.0,
Table C10.1.4, Subtest 3, 800 MHz)
DEVIATION DUE TO MODULATION
(HS-DPCCH, 3GPP TS 34.121-1 V8.7.0,
Table C10.1.4, Subtest 3, 2 GHz)
0.2
0.15
0.1
0.2
85 C
25 C
-2 0 C
85 C
25 C
-2 0 C
0.15
0.1
0.05
0
0.05
0
-0.05
-0.1
-0.15
-0.2
-0.05
-0.1
-0.15
-0.2
-35
-30
-25
-20
-15
-10
-5
-30
-25
-20
-15
-10
-5
0
Pin (dBm)
Pin (dBm)
Figure 15.
Figure 16.
8
Copyright © 2010–2011, Texas Instruments Incorporated
TRF1600
www.ti.com
SPAS094A –FEBRUARY 2010–REVISED MAY 2011
DEVIATION DUE TO MODULATION
(HS-DPCCH, 3GPP TS 34.121-1 V8.7.0,
Table C10.1.4, Subtest 4, 800 MHz)
DEVIATION DUE TO MODULATION
(HS-DPCCH, 3GPP TS 34.121-1 V8.7.0,
Table C10.1.4, Subtest 4, 2 GHz)
0.2
0.2
0.15
0.1
85 C
25 C
-2 0 C
85 C
25 C
-20 C
0.15
0.1
0.05
0
0.05
0
-0.05
-0.1
-0.15
-0.2
-0.05
-0.1
-0.15
-0.2
-30
-25
-20
-15
-10
-5
0
-35
-30
-25
-20
-15
-10
-5
0
Pin (dBm)
Pin (dBm)
Figure 17.
Figure 18.
DEVIATION DUE TO MODULATION
DEVIATION DUE TO MODULATION
(HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0,
Table C11.1.3, Subtest 1, 800 MHz)
(HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0,
Table C11.1.3, Subtest 1, 2 GHz)
0.2
0.2
85 C
25 C
-2 0 C
85 C
25 C
-20 C
0.15
0.1
0.15
0.1
0.05
0
0.05
0
-0.05
-0.1
-0.15
-0.2
-0.05
-0.1
-0.15
-0.2
-30
-25
-20
-15
-10
-5
0
-35
-30
-25
-20
-15
-10
-5
0
Pin (dBm)
Pin (dBm)
Figure 19.
Figure 20.
DEVIATION DUE TO MODULATION
DEVIATION DUE TO MODULATION
(HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0,
Table C11.1.3, Subtest 2, 800 MHz)
(HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0,
Table C11.1.3, Subtest 2, 2 GHz)
0.2
0.2
85 C
25 C
-2 0 C
85 C
25 C
-2 0 C
0.15
0.1
0.15
0.1
0.05
0
0.05
0
-0.05
-0.1
-0.15
-0.2
-0.05
-0.1
-0.15
-0.2
-35
-30
-25
-20
-15
-10
-5
0
-30
-25
-20
-15
-10
-5
0
Pin (dBm)
Pin (dBm)
Figure 21.
Figure 22.
Copyright © 2010–2011, Texas Instruments Incorporated
9
TRF1600
SPAS094A –FEBRUARY 2010–REVISED MAY 2011
www.ti.com
DEVIATION DUE TO MODULATION
(HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0,
Table C11.1.3, Subtest 3, 800 MHz)
DEVIATION DUE TO MODULATION
(HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0,
Table C11.1.3, Subtest 3, 2 GHz)
0.2
0.2
85C
85C
25C
-20 C
25C
0.15
0.15
0.1
-20C
0.1
0.05
0
0.05
0
-0.05
-0.1
-0.15
-0.2
-0.05
-0.1
-0.15
-0.2
-30
-25
-20
-15
-10
-5
0
-35
-30
-25
-20
-15
-10
-5
0
Pin (dBm)
Pin (dBm)
Figure 23.
Figure 24.
DEVIATION DUE TO MODULATION
DEVIATION DUE TO MODULATION
(HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0,
Table C11.1.3, Subtest 4, 800 MHz)
(HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0,
Table C11.1.3, Subtest 4, 2 GHz)
0.2
0.2
85C
25C
-20 C
85C
25C
-20C
0.15
0.1
0.15
0.1
0.05
0
0.05
0
-0.05
-0.1
-0.05
-0.1
-0.15
-0.2
-0.15
-0.2
-35
-30
-25
-20
-15
-10
-5
0
-30
-25
-20
-15
-10
-5
0
Pin (dBm)
Pin (dBm)
Figure 25.
Figure 26.
DEVIATION DUE TO MODULATION
DEVIATION DUE TO MODULATION
(HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0,
Table C11.1.3, Subtest 5, 800 MHz)
(HS-DPCCH and E-DCH, 3GPP TS 34.121-1 V8.7.0,
Table C11.1.3, Subtest 5, 2 GHz)
0.2
0.2
85 C
25 C
-20 C
85 C
25 C
-20 C
0.15
0.1
0.15
0.1
0.05
0
0.05
0
-0.05
-0.1
-0.15
-0.2
-0.05
-0.1
-0.15
-0.2
-35
-30
-25
-20
-15
-10
-5
0
-30
-25
-20
-15
-10
-5
0
Pin (dBm)
Pin (dBm)
Figure 27.
Figure 28.
10
Copyright © 2010–2011, Texas Instruments Incorporated
TRF1600
www.ti.com
SPAS094A –FEBRUARY 2010–REVISED MAY 2011
DEVIATION DUE TO MODULATION
DEVIATION DUE TO MODULATION
(HS-DPCCH and E-DCH with 16QAM , 3GPP TS 34.121-1
V8.7.0,
(HS-DPCCH and E-DCH with 16QAM , 3GPP TS 34.121-1
V8.7.0,
Table C11.1.4, 800 MHz)
Table C11.1.4, 2 GHz)
0.2
0.2
85 C
85 C
25 C
0.15
0.15
0.1
25 C
-2 0 C
-20 C
0.1
0.05
0
0.05
0
-0.05
-0.1
-0.15
-0.2
-0.05
-0.1
-0.15
-0.2
-35
-30
-25
-20
-15
-10
-5
0
-30
-25
-20
-15
-10
-5
0
Pin (dBm)
Pin (dBm)
Figure 29.
Figure 30.
*The input coupling capacitor on the RF input pin may be omitted if the DC voltage on this pin is at ground.
Figure 31. Application Circuit
Copyright © 2010–2011, Texas Instruments Incorporated
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TRF1600
SPAS094A –FEBRUARY 2010–REVISED MAY 2011
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APPENDIX A: MEASUREMENT PROCEDURES
10-dB Log Conformance Error Over Temperature
The 10-dB log conformance error over temperature is a measure of the change in slope of the rms detector
output over temperature. The measurement is performed by taking an ideal 10-dB step in input power with a CW
signal at room temperature and measuring the change in output voltage. The measurement is then repeated at a
different temperature and the 10-dB log conformance error over temperature is given in dB by Equation 1.
DVOUT (T)
DVOUT (25°C)
10-dB log conformance error = 10 ·
- 1
(
)
(1)
This measurement is taken on a statistical sample of parts. The 3σ limits from these samples are within the limits
provided in the Electrical Characteristics table.
Straight Line 5-dB Step Error
The straight line 5-dB step error is a measure of the maximum error that results from fitting a straight line
between two points of a 5-dB step as shown in Figure 32. The straight line shown in bold represents a perfect
5-dB step, while the curved line represents the detector output (the curvature in this figure is exaggerated for
explanation purposes). The maximum difference output voltage between these two curves is the straight line
5-dB step error.
Vout (V)
Pin (dB)
5 dB
Figure 32. Straight Line 5-dB Step Error
Response Temperature Coefficient & Response Temperature Sensitivity Spread - 1σ
The response temperature coefficient is a measure of the change in detector output voltage for a given RF input
power. The measurement is performed by measuring the detector output voltage over temperature for a set CW
RF input power. The response temperature gain coefficient expressed in mdB/°C is given by Equation 2.
DVOUT
VOUT,GAIN · DT
1000 ·
Response temperature gain coefficient =
(2)
Where VOUT,GAIN is the output voltage gain expressed in V/dB. This measurement is taken on a statistical sample
of parts. The mean of these samples are provided in the Electrical Characteristics table.
The response temperature sensitivity spread - 1σ, ΔTCVOUT, is the 1σ variation in TCVOUT
.
12
Copyright © 2010–2011, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
30-Mar-2012
PACKAGING INFORMATION
Status (1)
Eco Plan (2)
MSL Peak Temp (3)
Samples
Orderable Device
Package Type Package
Drawing
Pins
Package Qty
Lead/
Ball Finish
(Requires Login)
TRF1600DRVR
PREVIEW
SON
DRV
6
3000
TBD
Call TI
Call TI
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
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