TRF370417-DIE [TI]
QUADRATURE MODULATOR;
| 型号： | TRF370417-DIE |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | QUADRATURE MODULATOR |
| 文件： | 总29页 (文件大小：612K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TRF370417
www.ti.com
SLWS213 –JANUARY 2010
50-MHz TO 6-GHz QUADRATURE MODULATOR
Check for Samples: TRF370417
1
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
•
•
•
Cellular Base Station Transceiver
•
76-dBc Single-Carrier WCDMA ACPR at –8
dBm Channel Power
CDMA: IS95, UMTS, CDMA2000, TD-SCDMA
TDMA: GSM, IS-136, EDGE/UWC-136
Multicarrier GSM
WiMAX: 802.16d/e
3GPP: LTE
Point-to-Point (P2P) Microwave
Wideband Software-Defined Radio
Public Safety: TETRA/APC025
Communication-System Testers
Cable Modem Termination System (CMTS)
•
•
•
•
•
Low Noise Floor: –162.3 dBm/Hz at 2140 MHz
OIP3 of 26.5 dBm at 2140 MHz
P1dB of 12 dBm at 2140 MHz
Carrier Feedthrough of –38 dBm at 2140 MHz
Side-Band Suppression of –50 dBc at 2140
MHz
•
•
•
Single Supply: 4.5-V–5.5-V Operation
Silicon Germanium Technology
1.7-V CM at I, Q Baseband Inputs
RGE PACKAGE
(TOP VIEW)
1
2
3
4
5
6
18
17
16
15
14
13
NC
GND
LOP
LON
GND
NC
VCC
GND
RF_OUT
NC
GND
NC
P0024-04
DESCRIPTION
The TRF370417 is a low-noise direct quadrature modulator, capable of converting complex modulated signals
from baseband or IF directly up to RF. The TRF370417 is a high-performance, superior-linearity device that
operates at RF frequencies of 50 MHz through 6 GHz. The modulator is implemented as a double-balanced
mixer. The RF output block consists of a differential to single-ended converter and an RF amplifier capable of
driving a single-ended 50-Ω load without any need of external components. The TRF370417 requires a 1.7-V
common-mode voltage for optimum linearity performance.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2010, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TRF370417
SLWS213 –JANUARY 2010
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Functional Block Diagram
NC
GND
LOP
LON
GND
NC
1
2
3
4
5
6
18
17
16
15
14
13
VCC
GND
RF_OUT
NC
S
0/90
GND
NC
B0175-01
NOTE: NC = No connection
DEVICE INFORMATION
TERMINAL FUNCTIONS
TERMINAL
I/O
DESCRIPTION
NAME
BBIN
NO.
22
21
9
I
I
I
I
In-phase negative input
BBIP
In-phase positive input
BBQN
BBQP
Quadrature-phase negative input
Quadrature-phase positive input
10
2, 5, 8, 11,
12, 14, 17,
19, 20, 23
GND
–
Ground
LON
LOP
4
3
I
I
Local oscillator negative input
Local oscillator positive input
1, 6, 7, 13,
15
NC
–
No connect
RF_OUT
VCC
16
O
–
RF output
18, 24
Power supply
2
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SLWS213 –JANUARY 2010
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range (unless otherwise noted)
VALUE(2)
–0.3 V to 6
–40 to 150
–40 to 85
UNIT
V
Supply voltage range
TJ
Operating virtual junction temperature range
Operating ambient temperature range
Storage temperature range
°C
TA
°C
Tstg
–65 to 150
°C
ESD
Rating
HBM
CDM
75
75
V
V
ESD
Rating
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VCC
Power-supply voltage
4.5
5
5.5
V
THERMAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUE
UNIT
RqJA
RqJC
RqJB
Thermal resistance, junction-to-ambient High-K board, still air
29.4
18.6
14
°C/W
°C/W
°C/W
Thermal resistance, junction-to-case
Thermal resistance, junction-to-board
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
DC Parameters
ICC Total supply current (1.7 V CM)
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TA = 25°C
205
245
mA
LO Input (50-Ω, Single-Ended)
LO frequency range
0.05
–5
6
GHz
dBm
dB
fLO
LO input power
0
12
LO port return loss
15
Baseband Inputs
VCM
BW
I and Q input dc common voltage
1.7
1
1-dB input frequency bandwidth
Input impedance, resistance
GHz
5
kΩ
ZI(single
ended)
Input impedance, parallel
capacitance
3
pF
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SLWS213 –JANUARY 2010
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RF OUTPUT PARAMETERS
over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, VinBB = 98 mVrms single-ended in
quadrature, fBB = 50 kHz (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fLO = 70 MHz at 8 dBm
G
Voltage gain
Output rms voltage over input I (or Q) rms voltage
–8
7.3
dB
P1dB Output compression point
dBm
dBm
dBm
dBm
dBc
IP3
IP2
Output IP3
fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone
fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone
Unadjusted
22
Output IP2
69
Carrier feedthrough
Sideband suppression
–46
–27.5
Unadjusted; fBB = 4.5, 5.5 MHz
fLO = 400 MHz at 8 dBm
Voltage gain
P1dB Output compression point
G
Output rms voltage over input I (or Q) rms voltage
–1.9
11
dB
dBm
dBm
dBm
dBm
dBc
IP3
IP2
Output IP3
fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone
fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone
Unadjusted
24.5
68
Output IP2
Carrier feedthrough
Sideband suppression
–38
–40
Unadjusted; fBB = 4.5, 5.5 MHz
fLO = 945.6 MHz at 8 dBm
Voltage gain
P1dB Output compression point
G
Output rms voltage over input I (or Q) rms voltage
–2.5
11
dB
dBm
dBm
dBm
dBm
dBc
IP3
IP2
Output IP3
fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone
fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone
Unadjusted
25
Output IP2
65
Carrier feedthrough
Sideband suppression
Output return loss
Output noise floor
–40
–42
9
Unadjusted; fBB = 4.5, 5.5 MHz
dB
≥13 MHz offset from fLO; Pout = –5 dBm
–161.2
dBm/Hz
fLO = 1800 MHz at 8 dBm
Voltage gain
P1dB Output compression point
G
Output rms voltage over input I (or Q) rms voltage
–2.5
12
dB
dBm
dBm
dBm
dBm
dBc
IP3
IP2
Output IP3
fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone
fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone
Unadjusted
26
Output IP2
60
Carrier feedthrough
Sideband suppression
Output return loss
Output noise floor
–40
–50
8
Unadjusted; fBB = 4.5, 5.5 MHz
dB
≥13 MHz offset from fLO; Pout = –5 dBm
–161.5
dBm/Hz
4
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SLWS213 –JANUARY 2010
RF OUTPUT PARAMETERS (continued)
over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, VinBB = 98 mVrms single-ended in
quadrature, fBB = 50 kHz (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fLO = 1960 MHz at 8 dBm
G
Voltage gain
Output rms voltage over input I (or Q) rms voltage
–2.5
12
dB
dBm
dBm
dBm
dBm
dBc
P1dB Output compression point
IP3
IP2
Output IP3
fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone
fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone
Unadjusted
26.5
60
Output IP2
Carrier feedthrough
Sideband suppression
Output return loss
Output noise floor
Error vector magnitude (rms)
–38
–50
8
Unadjusted; fBB = 4.5, 5.5 MHz
dB
≥13 MHz offset from fLO; Pout = –5 dBm
1 EDGE signal, Pout = –5 dBm(1)
1 WCDMA signal; Pout = –8 dBm(2)
–162
0.43%
–76
–74
–68
–67
–80
–78
–72
–69
dBm/Hz
EVM
1 WCDMA signal; Pout = –8 dBm(3)
Adjacent-channel power ratio
Alternate-channel power ratio
dBc
dBc
2 WCDMA signals; Pout = –11 dBm per carrier(3)
4 WCDMA signals; Pout = –14 dBm per carrier(3)
1 WCDMA signal; Pout = –8 dBm(2)
1 WCDMA signal; Pout = –8 dBm(3)
2 WCDMA signals; Pout = –11 dBm per carrier(3)
4 WCDMA signals; Pout = –14 dBm per carrier(3)
ACPR
fLO = 2140 MHz at 8 dBm
Voltage gain
P1dB Output compression point
G
Output rms voltage over input I (or Q) rms voltage
–2.4
12
dB
dBm
dBm
dBm
dBm
dBc
IP3
IP2
Output IP3
fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone
fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone
Unadjusted
26.5
66
Output IP2
Carrier feedthrough
Sideband suppression
Output return loss
Output noise floor
–38
–50
8.5
Unadjusted; fBB = 4.5, 5.5 MHz
dB
≥13 MHz offset from fLO ; Pout = –5 dBm
1 WCDMA signal; Pout = –8 dBm(2)
1 WCDMA signal; Pout = –8 dBm(3)
2 WCDMA signal; Pout = –11 dBm per carrier(3)
4 WCDMA signals; Pout = –14 dBm per carrier(3)
1 WCDMA signal; Pout = –8 dBm(2)
1 WCDMA signal; Pout = –8 dBm(3)
2 WCDMA signal; Pout = –11 dBm(3)
4 WCDMA signals; Pout = –14 dBm per carrier(3)
–162.3
–76
–72
–67
–66
–80
–78
–74
–68
dBm/Hz
Adjacent-channel power ratio
Alternate-channel power ratio
dBc
dBc
ACPR
(1) The contribution from the source of about 0.28% is not de-embedded from the measurement.
(2) Measured with DAC5687 as source generator; with 2.5 MHz LPF.
(3) Measured with DAC5687 as source generator; no external BB filters are used.
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RF OUTPUT PARAMETERS (continued)
over recommended operating conditions, power supply = 5 V, TA = 25°C, VCM = 1.7 V, VinBB = 98 mVrms single-ended in
quadrature, fBB = 50 kHz (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fLO = 2500 MHz at 8 dBm
G
Voltage gain
Output rms voltage over input I (or Q) rms voltage
–1.6
13
dB
dBm
dBm
dBm
dBm
dBc
dB
P1dB Output compression point
IP3
IP2
Output IP3
fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone
fBB = 4.5, 5.5 MHz; Pout = –8 dBm per tone
Unadjusted
29
Output IP2
65
Carrier feedthrough
Sideband suppression
–37
–47
–47
–45
Unadjusted; fBB = 4.5, 5.5 MHz
WiMAX 5-MHz carrier, Pout = –8 dBm(4)
WiMAX 5-MHz carrier, Pout = 0 dBm(4)
EVM
Error vector magnitude (rms)
dB
fLO = 3500 MHz at 8 dBm
Voltage gain
P1dB Output compression point
G
Output rms voltage over input I (or Q) rms voltage
0.6
13.5
25
dB
dBm
dBm
dBm
dBm
dBc
dB
IP3
IP2
Output IP3
fBB = 4.5, 5.5 MHz
Output IP2
fBB = 4.5, 5.5 MHz
65
Carrier feedthrough
Sideband suppression
Unadjusted
–35
–36
–47
–43
Unadjusted; fBB = 4.5, 5.5 MHz
WiMAX 5-MHz carrier, Pout = –8 dBm(4)
WiMAX 5-MHz carrier, Pout = 0 dBm(4)
EVM
Error vector magnitude (rms)
dB
fLO = 4000 MHz at 8 dBm
Voltage gain
P1dB Output compression point
G
Output rms voltage over input I (or Q) rms voltage
0.2
12
dB
dBm
dBm
dBm
dBm
dBc
IP3
IP2
Output IP3
fBB = 4.5, 5.5 MHz
fBB = 4.5, 5.5 MHz
Unadjusted
22.5
60
Output IP2
Carrier feedthrough
Sideband suppression
–36
–36
Unadjusted; fBB = 4.5, 5.5 MHz
fLO = 5800 MHz at 4 dBm
Voltage gain
P1dB Output compression point
G
Output rms voltage over input I (or Q) rms voltage
–5.5
12.9
25
dB
dBm
dBm
dBm
dBm
dBc
dB
IP3
IP2
Output IP3
fBB = 4.5, 5.5 MHz
Output IP2
fBB = 4.5, 5.5 MHz
55
Carrier feedthrough
Sideband suppression
Error-vector magnitude
Unadjusted
–31
–36
–40
Unadjusted; fBB = 4.5, 5.5 MHz
WiMAX 5-MHz carrier, Pout = –12 dBm(4)
EVM
(4) Sideband suppression optimized with LO drive level; EVM contribution from instrument is not accounted for.
6
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SLWS213 –JANUARY 2010
TYPICAL CHARACTERISTICS
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
OUTPUT POWER
vs
OUTPUT POWER
vs
BASEBAND VOLTAGE
FREQUENCY AND TEMPERATURE
2
0
15
10
–40°C
−2
5
−4
0
25°C
−6
−5
85°C
−8
−10
−15
−20
V
= 98 mVrms SE
IN
−10
−12
LO = 4 dBm
= 5 V
V
CC
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
0.01
0.1
1
V
BB
− Baseband Voltage Single-Ended RMS − V
G002
G001
Figure 1.
Figure 2.
OUTPUT POWER
vs
OUTPUT POWER
vs
FREQUENCY AND SUPPLY VOLTAGE
FREQUENCY AND LO POWER
2
0
2
0
5.5 V
0 dBm
–5 dBm
−2
−2
5 V
4 dBm
−4
−4
4.5 V
−6
−6
−8
−8
V
= 98 mVrms SE
V
V
= 98 mVrms SE
IN
IN
−10
−12
−10
−12
8 dBm
LO = 4 dBm
T = 25°C
A
= 5 V
CC
T = 25°C
A
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
G003
G004
Figure 3.
Figure 4.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
P1dB
P1dB
vs
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND SUPPLY VOLTAGE
20
18
16
14
12
10
8
20
18
16
14
12
10
8
LO = 4 dBm
LO = 4 dBm
T = 25°C
A
V
CC
= 5 V
5.5 V
25°C
85°C
5 V
4.5 V
–40°C
6
6
4
4
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
G005
G006
Figure 5.
Figure 6.
P1dB
OIP3
vs
vs
FREQUENCY AND LO POWER
FREQUENCY AND TEMPERATURE
20
18
16
14
12
10
8
40
35
30
25
20
15
10
5
25°C
–5 dBm
0 dBm
–40°C
4 dBm
85°C
8 dBm
6
f
P
= 4.5, 5.5 MHz
BB
4
= −8 dBm Per Tone
OUT
V
= 5 V
LO = 4 dBm
= 5 V
2
CC
T = 25°C
A
V
CC
0
0
0
1000 2000 3000 4000 5000 6000
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
f − Frequency − MHz
G007
G008
Figure 7.
Figure 8.
8
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
OIP3
OIP3
vs
vs
FREQUENCY AND SUPPLY VOLTAGE
FREQUENCY AND LO POWER
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
0 dBm
5 V
4 dBm
–5 dBm
4.5 V
5.5 V
8 dBm
f
P
= 4.5, 5.5 MHz
= −8 dBm Per Tone
f
P
V
= 4.5, 5.5 MHz
= −8 dBm Per Tone
OUT
= 5 V
T = 25°C
BB
BB
OUT
LO = 4 dBm
T = 25°C
CC
A
A
0
1000 2000 3000 4000 5000 6000
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
f − Frequency − MHz
G009
G010
Figure 9.
Figure 10.
OIP2
OIP2
vs
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND SUPPLY VOLTAGE
100
90
80
70
60
50
40
30
20
100
90
80
70
60
50
40
30
20
5 V
25°C
4.5 V
–40°C
85°C
5.5 V
f
P
= 4.5, 5.5 MHz
= −8 dBm Per Tone
LO = 4 dBm
= 5 V
f
P
= 4.5, 5.5 MHz
= −8 dBm Per Tone
LO = 4 dBm
T = 25°C
BB
BB
OUT
OUT
V
CC
A
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
G011
G012
Figure 11.
Figure 12.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
OIP2
UNADJUSTED CARRIER FEEDTHROUGH
vs
vs
FREQUENCY AND LO POWER
FREQUENCY AND TEMPERATURE
0
−10
−20
−30
−40
−50
−60
−70
−80
100
90
80
70
60
50
40
30
20
LO = 4 dBm
V
CC
= 5 V
4 dBm
–40°C
0 dBm
–5 dBm
= 4.5, 5.5 MHz
= −8 dBm Per Tone
= 5 V
8 dBm
f
P
V
BB
25°C
OUT
CC
85°C
T = 25°C
A
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
G014
G013
Figure 13.
Figure 14.
UNADJUSTED CARRIER FEEDTHROUGH
vs
UNADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND SUPPLY VOLTAGE
FREQUENCY AND LO POWER
0
−10
−20
−30
−40
−50
−60
0
−10
−20
−30
−40
−50
−60
−70
−80
V
= 5 V
LO = 4 dBm
T = 25°C
A
CC
T = 25°C
A
5 V
8 dBm
5.5 V
–5 dBm
4.5 V
4 dBm
0 dBm
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
G016
G015
Figure 15.
Figure 16.
10
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
UNADJUSTED SIDEBAND SUPPRESSION
UNADJUSTED SIDEBAND SUPPRESSION
vs
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND SUPPLY VOLTAGE
0
−10
−20
−30
−40
−50
−60
−70
−80
0
−10
−20
−30
−40
−50
−60
−70
−80
4.5 V
–40°C
25°C
5 V
85°C
LO = 4 dBm
LO = 4 dBm
T = 25°C
5.5 V
V
CC
= 5 V
A
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
G017
G018
Figure 17.
Figure 18.
UNADJUSTED SIDEBAND SUPPRESSION
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
vs
FREQUENCY AND LO POWER
FREQUENCY AND TEMPERATURE
0
−10
−20
−30
−40
−50
−60
−70
−80
−150
−152
−154
−156
−158
−160
−162
−164
−166
−168
−170
P
= −5 dBm
OUT
LO = 8 dBm
= 5 V
V
CC
8 dBm
85°C
–5 dBm
25°C
–40°C
4 dBm
V
= 5 V
CC
0 dBm
T = 25°C
A
0
1000 2000 3000 4000 5000 6000
f − Frequency − MHz
0.8
1.4
2.0
2.6
3.2
3.8
4.4
5.0
5.6
f − Frequency − GHz
G019
G020
Figure 19.
Figure 20.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
FREQUENCY AND SUPPLY VOLTAGE
OUTPUT POWER
−154
−156
−158
−160
−162
−164
−166
−150
−152
−154
−156
−158
−160
−162
−164
−166
−168
−170
P
= −5 dBm
V
= 5 V
OUT
CC
LO = 8 dBm
T = 25°C
A
LO = 8 dBm
T = 25°C
A
5600 MHz
5.5 V
948.5 MHz
5 V
4.5 V
2140 MHz
1960 MHz
1800 MHz
−10−9 −8 −7 −6 −5 −4 −3 −2 −1 0
1
2
3
4
5
0.8
1.4
2.0
2.6
3.2
3.8
4.4
5.0
5.6
P
OUT
− Output Power − dBm
f − Frequency − GHz
G022
G021
Figure 21.
Figure 22.
ADJUSTED CARRIER FEEDTHROUGH
vs
ADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND TEMPERATURE
0
−10
−20
−30
−40
−50
−60
−70
−80
0
−10
−20
−30
−40
−50
−60
−70
−80
Adj at 942.6 MHz @ 25°C
LO = 4 dBm
Adj at 70 MHz @ 25°C
LO = 4 dBm
V
CC
= 5 V
V
CC
= 5 V
85°C
–40°C
25°C
–40°C
25°C
85°C
60 62 64 66 68 70 72 74 76 78 80
f − Frequency − MHz
900 910 920 930 940 950 960 970 980 990 1000
f − Frequency − MHz
G023
G024
Figure 23.
Figure 24.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
ADJUSTED CARRIER FEEDTHROUGH
vs
ADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND TEMPERATURE
0
−10
−20
−30
−40
−50
−60
−70
−80
0
−10
−20
−30
−40
−50
−60
−70
−80
Adj at 2500 MHz @ 25°C
LO = 4 dBm
Adj at 2140 MHz @ 25°C
LO = 4 dBm
V
CC
= 5 V
V
CC
= 5 V
–40°C
–40°C
85°C
25°C
25°C
85°C
2520
2400
2440
2480
2560
2600
2040
2080
2120
2160
2200
2240
f − Frequency − MHz
f − Frequency − MHz
G026
G025
Figure 25.
Figure 26.
ADJUSTED CARRIER FEEDTHROUGH
vs
ADJUSTED CARRIER FEEDTHROUGH
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND TEMPERATURE
0
−10
−20
−30
−40
−50
−60
−70
−80
0
−10
−20
−30
−40
−50
−60
−70
−80
Adj at 3500 MHz @ 25°C
LO = 4 dBm
Adj at 5800 MHz @ 25°C
LO = 4 dBm
V
CC
= 5 V
V
CC
= 5 V
–40°C
–40°C
25°C
85°C
25°C
85°C
3400
3440
3480
3520
3560
3600
5700
5740
5780
5820
5860
5900
f − Frequency − MHz
f − Frequency − MHz
G028
G027
Figure 27.
Figure 28.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
ADJUSTED SIDEBAND SUPPRESSION
vs
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND TEMPERATURE
0
−10
−20
−30
−40
−50
−60
−70
−80
0
−10
−20
−30
−40
−50
−60
−70
−80
Adj at 70 MHz @ 25°C
LO = 4 dBm
Adj at 942.6 MHz @ 25°C
LO = 4 dBm
V
CC
= 5 V
V
CC
= 5 V
25°C
–40°C
85°C
25°C
85°C
–40°C
60 62 64 66 68 70 72 74 76 78 80
f − Frequency − MHz
900 910 920 930 940 950 960 970 980 990 1000
f − Frequency − MHz
G029
G030
Figure 29.
Figure 30.
ADJUSTED SIDEBAND SUPPRESSION
vs
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND TEMPERATURE
0
−10
−20
−30
−40
−50
−60
−70
−80
0
−10
−20
−30
−40
−50
−60
−70
−80
Adj at 2140 MHz @ 25°C
LO = 4 dBm
Adj at 2500 MHz @ 25°C
LO = 4 dBm
V
CC
= 5 V
V
CC
= 5 V
–40°C
–40°C
85°C
25°C
85°C
25°C
2040
2080
2120
2160
2200
2240
2400
2440
2480
2520
2560
2600
f − Frequency − MHz
f − Frequency − MHz
G031
G032
Figure 31.
Figure 32.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
ADJUSTED SIDEBAND SUPPRESSION
vs
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND TEMPERATURE
0
−10
−20
−30
−40
−50
−60
−70
−80
0
−10
−20
−30
−40
−50
−60
−70
−80
Adj at 3500 MHz @ 25°C
LO = 4 dBm
Adj at 5800 MHz @ 25°C
LO = 4 dBm
V
CC
= 5 V
V
CC
= 5 V
–40°C
–40°C
25°C
85°C
85°C
3520
25°C
3560
3400
3440
3480
3600
5700
5740
5780
5820
5860
5900
f − Frequency − MHz
f − Frequency − MHz
G033
G034
Figure 33.
Figure 34.
OIP3
vs
OIP3
vs
COMMON-MODE VOLTAGE at 948.5 MHz
COMMON-MODE VOLTAGE at 1800 MHz
32
30
28
26
24
22
20
18
16
14
12
10
30
28
26
24
22
20
18
16
14
12
10
–40°C
25°C
25°C
85°C
85°C
–40°C
f
P
= 4.5, 5.5 MHz
f
P
= 4.5, 5.5 MHz
= −8 dBm Per Tone
LO = 4 dBm
V = 5 V
CC
BB
BB
= −8 dBm Per Tone
OUT
OUT
LO = 4 dBm
= 5 V
V
CC
1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80
1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80
V
CM
− Common-Mode Voltage − V
V
CM
− Common-Mode Voltage − V
G035
G036
Figure 35.
Figure 36.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
OIP3
OIP3
vs
vs
COMMON-MODE VOLTAGE at 2140 MHz
COMMON-MODE VOLTAGE at 5800 MHz
40
37
34
31
28
25
22
19
16
13
10
40
37
34
31
28
25
22
19
16
13
10
f
P
= 4.5, 5.5 MHz
BB
= −8 dBm Per Tone
OUT
LO = 4 dBm
= 5 V
25°C
V
25°C
CC
–40°C
85°C
85°C
f
P
= 4.5, 5.5 MHz
BB
= −8 dBm Per Tone
OUT
LO = 4 dBm
= 5 V
–40°C
1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80
V
CC
1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80
V
CM
− Common-Mode Voltage − V
V
CM
− Common-Mode Voltage − V
G037
G038
Figure 37.
Figure 38.
OIP3
vs
ADJACENT CHANNEL POWER RATIO
vs
TOTAL OUTPUT POWER
OUTPUT POWER at 1960 MHz
−60
−63
−66
−69
−72
−75
−78
−81
−84
−87
−90
40
35
30
25
20
15
10
One Carrier, WCDMA at 1960 MHz
DAC5687 as Source w/ 2.5 MHz LPF
f
= 4.5, 5.5 MHz
BB
LO = 4 dBm
= 5 V
V
CC
1800 MHz
T = 25°C
A
Adj
948.5 MHz
Alt
−20 −18 −16 −14 −12 −10
−8
−6
−4
−12 −10 −8
−6
−4
−2
0
2
4
P
OUT
− Output Power − dBm
P
OUT
− Total Output Power − dBm
G040
G039
Figure 39.
Figure 40.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
ADJACENT CHANNEL POWER RATIO
vs
OUTPUT POWER at 2140 MHz
OIP3 at 1960 MHz DISTRIBUTION
−60
−63
−66
−69
−72
−75
−78
−81
−84
−87
−90
60
50
40
30
20
10
0
One Carrier, WCDMA at 2140 MHz
DAC5687 as Source w/ 2.5 MHz LPF
Adj
Alt
24
25
26
27
28
29
−20 −18 −16 −14 −12 −10
−8
−6
−4
P
OUT
− Output Power − dBm
OIP3 − dBm
G041
G042
Figure 41.
Figure 42.
UNADJUSTED CARRIER FEEDTHROUGH
at 1960 MHz DISTRIBUTION
OIP2 at 1960 MHz DISTRIBUTION
25
20
15
10
5
18
16
14
12
10
8
6
4
2
0
0
56
58
60
62
64
66
68
70
72
−24 −28 −32 −36 −40 −44 −48 −52 −56 −60 −64
CS − Unadjusted Carrier Feedthrough − dBm
OIP2 − dBm
G043
G044
Figure 43.
Figure 44.
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TYPICAL CHARACTERISTICS (continued)
VCM = 1.7 V, VinBB = 98 mVrms single-ended sine wave in quadrature, VCC = 5 V, LO power = 4 dBm (single-ended), fBB = 50
kHz (unless otherwise noted).
UNADJUSTED SIDEBAND SUPPRESSION
at 1960 MHz DISTRIBUTION
P1dB at 1800 MHz DISTRIBUTION
35
30
25
20
15
10
5
30
25
20
15
10
5
0
0
11.4
11.6
11.8
12
12.2
12.4
−36 −40 −44 −48 −52 −56 −60 −64 −68 −72 −76
SS − Unadjusted Sideband Suppression − dBc
P1dB − dBm
G046
G045
Figure 45.
Figure 46.
APPLICATION INFORMATION AND EVALUATION BOARD
Basic Connections
•
•
See Figure 47 for proper connection of the TRF3704 modulator.
Connect a single power supply (4.5 V–5.5 V) to pins 18 and 24. These pins should be decoupled as shown
on pins 4, 5, 6, and 7.
•
•
Connect pins 2, 5, 8, 11, 12, 14, 17, 19, 20, and 23 to GND.
Connect a single-ended LO source of desired frequency to LOP (amplitude between –5 dBm and 12 dBm).
This should be ac-coupled through a 100-pF capacitor.
•
•
•
•
Terminate the ac-coupled LON with 50 Ω to GND.
Connect a baseband signal to pins 21 = I, 22 = I, 10 = Q, and 9 = Q.
The differential baseband inputs should be set to the proper common-mode voltage of 1.7V.
RF_OUT, pin 16, can be fed to a spectrum analyzer set to the desired frequency, LO ± baseband signal. This
pin should also be ac-coupled through a 100-pF capacitor.
•
All NC pins can be left floating.
ESD Sensitivity
RF devices may be extremely sensitive to electrostatic discharge (ESD). To prevent damage from ESD, devices
should be stored and handled in a way that prevents the build-up of electrostatic voltages that exceed the rated
level. Rated ESD levels should also not be exceeded while the device is installed on a printed circuit board
(PCB). Follow these guidelines for optimal ESD protection:
•
Low ESD performance is not uncommon in RF ICs; see the Absolute Maximum Ratings table. Therefore,
customers’ ESD precautions should be consistent with these ratings.
•
The device should be robust once assembled onto the PCB unless external inputs (connectors, etc.) directly
connect the device pins to off-board circuits.
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DNI
DNI
C11
C10
.1uF
.1uF
J3
BBIN
J4
BBIP
1
1
SMA_END
SMA_END
R2
0
R3
0
TP3
GND
TP4
VCC2
TP2
VCC1
TP1
GND
BLK
RED
RED
BLK
C5
1000pF
C4
C6
C7
+
+
1000pF
4.7uF
4.7uF
C15
C14
10pF
10pF
J1
LOP
C1
100pF
1
SMA_END
J7
RF_OUT
1
2
3
4
5
6
18
17
16
15
14
13
NC1
VCC1
GND7
RF_OUT
NC5
GND6
NC4
GND1
LOP
LON
GND2
NC2
R1
0
C3
100pF
SMA_END
1
U1
TRF370x
C8
C9
1uF
DNI
1uF
DNI
J2
LON
C2
100pF
1
SMA_END
TRF370333
DNI
0
TRF370317
0
0
0
R4
R5
0
TRF370315
J5
QN
J6
QP
0
DNI
TRF370417
DNI
1
1
SMA_END
SMA_END
DNI
DNI
C13
C12
.1uF
.1uF
S0214-03
NOTE: DNI = Do not install.
Figure 47. TRF3704 EVM Schematic
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Figure 48 shows the top view of the TRF3704 EVM board.
K001
Figure 48. TRF3704 EVM Board Layout
Table 1. Bill of Materials for TRF370x EVM
Item
Number
Reference
Designator
Quantity
Value
PCB Footprint
Mfr. Name
Mfr. Part Number
Note
1
2
3
3
2
2
C1, C2, C3
C4, C5
100 pF
0402
PANASONIC
PANASONIC
KERMET
ECJ-0EC1H101J
ECJ-0VC1H102J
T491A475K016AS
1000 pF
0402
C6, C7
4.7 mF
TANT_A
ECJ-
0EC1H010C_DNI
4
5
6
7
8
9
0
0
2
7
2
4
C8, C9
1 mF
0.1 mF
10 pF
LOP
0
0402
PANASONIC
PANASONIC
MURATA
DNI
DNI
C10, C11,
C12, C13
ECJ-
0EB1A104K_DNI
0402
GRM1555C1H100
JZ01D
C14, C15
0402
J1, J2, J3,
J4, J5, J6, J7
JOHNSON
COMPONENTS
SMA_SMEL_250x215
142-0711-821
ERJ-2GE0R00
ERJ-2GE0R00
OR
R1
0402
0402
PANASONIC
PANASONIC
EQUIVALENT
R2, R3, R4,
R5
OR
0
EQUIVALENT
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Table 1. Bill of Materials for TRF370x EVM (continued)
Item
Number
Reference
Designator
Quantity
Value
PCB Footprint
Mfr. Name
Mfr. Part Number
Note
QFN_24_163x163_
0p50mm
For TRF370333
EVM, TI supplied
TRF370333
TRF370317
TRF370315
TRF370417
TI
TI
TI
TI
TRF370333
TRF370317
TRF370315
TRF370417
QFN_24_163x163_
0p50mm
For TRF370317
EVM, TI supplied
10
1
U1
QFN_24_163x163_
0p50mm
For TRF370315
EVM, TI supplied
QFN_24_163x163_
0p50mm
For TRF370417
EVM, TI supplied
11
12
2
2
TP1, TP3
TP2, TP4
BLK
TP_THVT_100_RND
TP_THVT_100_RND
KEYSTONE
KEYSTONE
5001K
5000K
RED
GSM Applications
The TRF370417 is suited for GSM and multicarrier GSM applications because of its high linearity and low noise
level over the entire recommended operating range. It also has excellent EVM performance, which makes it ideal
for the stringent GSM/EDGE applications.
WCDMA Applications
The TRF370417 is also optimized for WCDMA applications where both adjacent-channel power ratio (ACPR)
and noise density are critically important. Using Texas instruments’ DAC568X series of high-performance
digital-to-analog converters as depicted in Figure 49, excellent ACPR levels were measured with one-, two-, and
four-WCDMA carriers. See Electrical Characteristics, fLO = 1960 MHz and fLO = 2140 MHz for exact ACPR
values.
16
TRF370x
RF Out
I/Q
DAC5687
Modulator
16
CLK1
CLK2
VCXO
TRF3761
PLL
CDCM7005
Clock Gen
LO Generator
Ref Osc
B0176-02
Figure 49. Typical Transmit Setup Block Diagram
DAC-to-Modulator Interface Network
For optimum linearity and dynamic range, the digital-to-analog converter (DAC) can interface directly with the
modulator; however, the common-mode voltage of each device must be maintained. A passive interface circuit is
used to transform the common-mode voltage of the DAC to the desired set-point of the modulator. The passive
circuit invariably introduces some insertion loss between the two devices. In general, it is desirable to keep the
insertion loss as low as possible to achieve the best dynamic range. Figure 50 shows the passive interconnect
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circuit for two different topologies. One topology is used when the DAC (e.g., DAC568x) common mode is larger
than the modulator. The voltage Vee is nominally set to ground, but can be set to a negative voltage to reduce the
insertion loss of the network. The second topology is used when the DAC (e.g., DAC56x2) common mode is
smaller than the modulator. Note that this passive interconnect circuit is duplicated for each of the differential I/Q
branches.
Vdd
It
R1
TRF370x
DAC568x
Id
R2
1.7V
3.3V
R3
Vee
Topology 1: DAC Vcm > TRF370x Vcm
Vdd
It
R1
DAC56x2
TRF370x
R2
0.7V
1.7V
R3
Id
Topology 2: DAC Vcm < TRF370x Vcm
S0338-01
Figure 50. Passive DAC-to-Modulator Interface Network
Table 2. DAC-to-Modulator Interface Network Values
Topology 1
Topology 2
With Vee = 0 V
With Vee = –5 V
DAC Vcm [V]
TRF370x Vcm [V]
Vdd [V]
3.3
1.7
5
3.3
1.7
5
0.7
1.7
5
Vee [V]
Gnd
66
–5
N/A
960
290
52
R1 [Ω]
56
R2 [Ω]
100
108
5.8
80
R3 [Ω]
336
1.9
Insertion loss [dB]
2.3
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DEFINITION OF SPECIFICATIONS
Unadjusted Carrier Feedthrough
This specification measures the amount by which the local oscillator component is suppressed in the output
spectrum of the modulator. If the common mode voltage at each of the baseband inputs is exactly the same and
there was no dc imbalance introduced by the modulator, the LO component would be naturally suppressed. DC
offset imbalances in the device allow some of the LO component to feed through to the output. Because this
phenomenon is independent of the RF output power and the injected LO input power, the parameter is
expressed in absolute power, dBm.
Adjusted (Optimized) Carrier Feedthrough
This differs from the unadjusted suppression number in that the baseband input dc offsets are iteratively adjusted
around their theoretical value of VCM to yield the maximum suppression of the LO component in the output
spectrum. This is measured in dBm.
Unadjusted Sideband Suppression
This specification measures the amount by which the unwanted sideband of the input signal is suppressed in the
output of the modulator, relative to the wanted sideband. If the amplitude and phase within the I and Q branch of
the modulator were perfectly matched, the unwanted sideband (or image) would be naturally suppressed.
Amplitude and phase imbalance in the I and Q branches results in the increase of the unwanted sideband. This
parameter is measured in dBc relative to the desired sideband.
Adjusted (Optimized) Sideband Suppression
This differs from the unadjusted sideband suppression in that the gain and phase of the baseband inputs are
iteratively adjusted around their theoretical values to maximize the amount of sideband suppression. This is
measured in dBc.
Suppressions Over Temperature
This specification assumes that the user has gone though the optimization process for the suppression in
question, and set the optimal settings for the I, Q inputs. This specification then measures the suppression when
temperature conditions change after the initial calibration is done.
Figure 51 shows a simulated output and illustrates the respective definitions of various terms used in this data
sheet.
Copyright © 2010, Texas Instruments Incorporated
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Product Folder Link(s): TRF370417
TRF370417
SLWS213 –JANUARY 2010
www.ti.com
f
rd
rd
fBBnBBn= Baseband FrequencyBBn
rd
fnBBnrd= RF FrequencyBBn
rd rd rd
f3rdH/L 3= 3 Order Intermodulation Product Frequency (High Side/Low Side)BBn
rd
BBn
2ndH/L 2=n2dBndBnOrder Intermodulation Product (High Side/Low Side)BBn
rd
rd
f
rd
LOBBnr=d Local Oscillator FrequencyBBn
rd
rd
LSBnBB=nLower Sideband FrequencyBBn
M0104-01
Figure 51. Graphical Illustration of Common Terms
24
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Copyright © 2010, Texas Instruments Incorporated
Product Folder Link(s): TRF370417
PACKAGE OPTION ADDENDUM
www.ti.com
31-May-2010
PACKAGING INFORMATION
Status (1)
Eco Plan (2)
MSL Peak Temp (3)
Samples
Orderable Device
Package Type Package
Drawing
Pins
Package Qty
Lead/
Ball Finish
(Requires Login)
TRF370417IRGER
TRF370417IRGET
ACTIVE
ACTIVE
VQFN
VQFN
RGE
RGE
24
24
3000
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
Purchase Samples
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
Purchase Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
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Addendum-Page 1
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