TRF8011_09 [TI]
900-MHz RF TRANSMIT DRIVER;
| 型号： | TRF8011_09 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 900-MHz RF TRANSMIT DRIVER 驱动 |
| 文件： | 总8页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056C – FEBRUARY 1997 – REVISED SEPTEMBER 2000
PWP PACKAGE
(TOP VIEW)
Operates from 4.8-V Power Supply for
900-MHz Applications
Unconditionally Stable
GND
GND
RFIN
GND
NC
VPC
GND
NC
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
GND
GND
RFOUT
GND
GND
Wide UHF Frequency Range: 800 MHz to
1000 MHz
24.5 dBm Typical Output Power
Linear Ramp Control
TXEN
GND
Transmit Enable/Disable Control
V
V
CC
CC
Advanced BiCMOS Processing Technology
for Low-Power Consumption, High
Efficiency, and Highly Linear Operation
V
BB
GND
GND
Minimum of External Components
Required for Operation
NC – No internal connection
Thermally Enhanced Surface-Mount
Package for Extremely Small Circuit
Footprint
description
The TRF8011 RF transmit driver amplifier is for use in 800 to 1000 MHz wireless communication systems. It
consists of a two-stage amplifier and a linear ramp controller for burst control in TDMA (time-division multiple
access) applications. Very few external components are required for operation. The input is dc-blocked and
requires no external matching. The output requires external matching suitable for the application frequency.
The device is enabled when the TXEN input is held high. A power control signal applied to the VPC input can
ramp the RF output power up or down to meet ramp and spurious emission specifications in TDMA systems.
The power control signal causes a linear change in output power as the voltage applied to VPC varies between
0 V and 3 V. With the RF input power applied to RFIN at 5 dBm and TXEN high, adjusting VPC from 0 V to 3 V
increases the output power from a typical value of –50 dBm to 24.5 dBm at 900 MHz. Forward isolation with
the input power applied to RFIN at 5 dBm, VPC = 0 V, and TXEN high is typically greater than 50 dB.
The TRF8011 is available in a thermally enhanced, surface-mount, 20-pin PowerPAD (PWP) thin-shrink small
outline package (TSSOP) and is characterized for operation from –40°C to 85°C. The PWP package has a
solderable pad that can improve the package thermal performance by bonding the pad to an external thermal
plane. The pad also acts as a low-inductance electrical path to ground and must be electrically connected to
the PCB ground plane as a continuation of the regular package terminals that are designated GND.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
Copyright 2000, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056C – FEBRUARY 1997 – REVISED SEPTEMBER 2000
functional block diagram
3
18
RFIN
RFOUT
15
Bias/Band Gap
Reference
TXEN
9
12, 13
6
Linear Ramp
Control
VPC
V
V
BB CC
Terminal Functions
TERMINAL
NO.
I/O
DESCRIPTION
NAME
GND
1,2,4,7,10,11,14,
16,17,19,20
Analog ground for all internal circuits. All signals are referenced to the ground terminals.
NC
5, 8
No connection. It is recommended that all NC terminals be connected to ground.
RF input. RFIN accepts signals between 800 MHz and 1000 MHz.
RFIN
3
I
RFOUT
18
O
RF output. RFOUT is an open-collector output and requires a decoupled connection to V
operation.
for
CC
TXEN
15
9
I
I
Transmit enable input (digital). When TXEN is high, the output device is enabled.
V
V
Control section supply voltage
First stage bias
BB
12, 13
6
CC
VPC
Voltagepowercontrol. VPCisasignalbetween0Vand3Vthatadjuststheoutputpowerfroma typical
value of –50 dBm to 25.5 dBm.
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.6 V to 5.6 V
CC
Input voltage range at TXEN, VPC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.6 V to 5.6 V
Input power at RFIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 dBm
Thermal resistance, junction to case, R
Thermal resistance, junction to ambient, R
(see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5°C/W
θJC
(see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32°C/W
θJA
Continuous total power dissipation at T = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9 W
A
Operating junction temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110°C
J
Junction temperature T max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
J
Operating free-air temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 85°C
A
Storage temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
stg
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Voltage values are with respect to GND.
2. No air flow and with infinite heatsink
3. With the thermal pad of the device soldered to a 1-ounce copper (Cu) ground plane of an FR4 board with no air flow
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056C – FEBRUARY 1997 – REVISED SEPTEMBER 2000
recommended operating conditions
MIN NOM
MAX
UNIT
V
Supply voltage: V
CC
(see Note 1)
3
5
High-level input voltage at TXEN, V
IH
V
CC
– 0.8
V
Low-level input voltage at TXEN, V
IL
0.8
85
V
Operating free-air temperature, T
–40
°C
A
NOTE: 1. Voltage values are with respect to GND.
electrical characteristics over full range of operating conditions
†
PARAMETER
Operating at maximum power out
TEST CONDITIONS
MIN
MAX
UNIT
TYP
TXEN high, VPC = 3 V
TXEN high, VPC = 0 V
190
200
10
250
mA
mA
mA
I
Supply current from V
CC
Operating at minimum power out
Power down
CC
TXEN low,
VPC = 0 V
0.05
†
Typical values are at T = 25°C
A
V
= 4.8 V, TXEN high, VPC = 3 V, T = 25°C (unless otherwise noted)
A
CC
PARAMETER
TEST CONDITIONS
MIN
870
TYP
MAX UNIT
Operating frequency range
Output power
925 MHz
P = 5 dBm
23.5
24.5
–50
29
25.5 dBm
dBm
dB
I
P = 5 dBm, VPC = 0 V
I
Gain (small signal)
P = –20 dBm
I
Power added efficiency (PAE)
P = 5 dBm
I
31
%
Input return loss (internally matched)
P = –20 dBm
I
12
dB
2f
3f
P = 5 dBm
–20
–35
–92
–93
dBc
0
I
Harmonics
P = 5 dBm
I
dBc
0
10 MHz above f
20 MHz above f
P = 5 dBm
I
dBm
dBm
0
Noise power in 30 kHz bandwidth
P = 5 dBm
I
0
stability
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
‡
Output VSWR < 6:1 all phases,
V < 5.6 V, P = 5 dBm, Output power 25 dBm,
CC
§
Stability
I
Output frequency band : 200 MHz – 1200 MHz
‡
§
VSWR = voltage standing wave ratio
No parasitic oscillations (all spurious < –70 dBc)
switching characteristics
V
= 4.8 V, T = 25°C
A
CC
PARAMETER
TEST CONDITIONS
MIN
TYP
1
MAX UNIT
t
t
Switching time, RF output OFF to ON
Switching time, RF output ON to OFF
TXEN = high, VPC stepped from 0 V to 3 V
TXEN = high, VPC stepped from 3 V to 0 V
µs
µs
on
2
off
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056C – FEBRUARY 1997 – REVISED SEPTEMBER 2000
APPLICATION INFORMATION
A typical application example for GSM cellular telephone systems is shown in Figure 1.
In all cases, a capacitor must be connected from the positive power supply to ground, as close as possible to
the IC terminals for power supply bypassing. A dc-blocking capacitor is also required on the RF output. A list
of components and their functions is given in Table 1.
Board Material
20
1
Type FR4, e = 4.3, h = 12 mils
r
GND
GND
GND
2
3
19
18
17
16
GND
RFIN
50 Ω
Line
C2
L1
RF INPUT
RFOUT
GND
RF OUTPUT
50 Ω
Line
50 Ω
Line
C1
4
L2
GND
NC
5
6
GND
15
14
VPC
GND
NC
TXEN
GND
7
50 Ω
Line
8
13
12
V
V
CC
L = 200 Mils
C3
9
V
BB
CC
10
11
R1
GND
GND
V
CC
C4
Figure 1. Typical GSM Cellular Telephone Application
Table 1. External Component Selection
COMPONENT DESIGNATION
TYPICAL VALUE
4 pF
FUNCTION
C1
C2
C3
C4
L1
Output impedance matching capacitor
DC-blocking capacitor for RF output
Matching capacitor
100 pF
1000 pF
1 µF
Power supply decoupling capacitor
Output impedance matching inductor
DC bias/RF choke
3.3 nH
L2
100 nH
80 Ω
R1
Bias supply resistor
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056C – FEBRUARY 1997 – REVISED SEPTEMBER 2000
TYPICAL CHARACTERISTICS
POWER ADDED EFFICIENCY
OUTPUT POWER
vs
vs
INPUT POWER
INPUT POWER
35
30
25
20
15
V
= 4.8 V
CC
25
20
15
VPC = 3 V
f = 900 MHz
–40°C
25°C
85°C
–40°C
25°C
85°C
10
5
10
5
V
= 4.8 V
CC
VPC = 3 V
f = 900 MHz
0
–20
0
–20
–15
–10
–5
0
5
10
–15
–10
–5
0
5
10
P – Input Power – dBm
I
P – Input Power – dBm
I
Figure 2
Figure 3
OUTPUT POWER AND POWER
ADDED EFFICIENCY
vs
OUTPUT POWER
vs
VPC GAIN CONTROL RANGE
FREQUENCY
30
20
35
27.5
P = 5 dBm
I
–40°C
25°C
V
CC
= 4.8 V
27
26.5
26
f = 900 MHz
30
25
10
85°C
0
–40°C
85°C
20
15
10
–10
–20
–30
–40
25.5
25
25°C
–40°C
25°C
85°C
24.5
V
= 4.8 V
P
CC
VPC = 3 V
P = 5 dBm
O
5
0
24
PAE
I
–50
23.5
0
0.5
1
1.5
2
2.5
3
860 870
880
890
900 910 920
930
VPC – Power Control Input – V
f – Frequency – MHz
Figure 4
Figure 5
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056C – FEBRUARY 1997 – REVISED SEPTEMBER 2000
TYPICAL CHARACTERISTICS
INPUT RETURN LOSS
vs
FREQUENCY
–11
–11.5
–12
V
= 4.8 V
CC
VPC = 3 V
P = –20 dBm
I
85°C
25°C
–12.5
–13
–40°C
860 870 880 890 900 910 920 930 940
f – Frequency – MHz
Figure 6
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TRF8011
900-MHz RF TRANSMIT DRIVER
SLWS056C – FEBRUARY 1997 – REVISED SEPTEMBER 2000
MECHANICAL DATA
PWP (R-PDSO-G**)
PowerPAD PLASTIC SMALL-OUTLINE PACKAGE
0,30
0,19
M
0,65
20
0,10
Thermal Pad (3,18
(see Note C)
2,41 NOM)
11
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
0,25
1
10
0°–8°
A
0,75
0,50
Seating Plane
0,10
0,15
0,05
1,20 MAX
PINS **
14
16
20
24
28
DIM
5,10
4,90
5,10
4,90
6,60
6,40
7,90
7,70
9,80
9,60
A MAX
A MIN
4073225/E 03/97
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane. This solderable pad
is electrically and thermally connected to the backside of the die and leads 1, 10, 11, and 20.
PowerPAD is a trademark of Texas Instruments.
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
Customers are responsible for their applications using TI components.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 2000, Texas Instruments Incorporated
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