TS3A5017PWE4 [TI]
DUAL SP4T ANALOG SWITCH 3.3-V/2.5-V DUAL 4:1 ANALOG MULTIPLEXER/DEMULTIPLEXER; 双SP4T模拟开关3.3 -V / 2.5 V双4 : 1模拟复用器/解复用器型号: | TS3A5017PWE4 |
厂家: | TEXAS INSTRUMENTS |
描述: | DUAL SP4T ANALOG SWITCH 3.3-V/2.5-V DUAL 4:1 ANALOG MULTIPLEXER/DEMULTIPLEXER |
文件: | 总30页 (文件大小:1127K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TS3A5017
www.ti.com .......................................................................................................................................... SCDS188D–JANUARY 2005–REVISED DECEMBER 2008
DUAL SP4T ANALOG SWITCH
3.3-V/2.5-V DUAL 4:1 ANALOG MULTIPLEXER/DEMULTIPLEXER
1
FEATURES
DESCRIPTION
•
•
•
•
•
•
•
Isolation in the Powered-Down Mode, V+ = 0
Low ON-State Resistance
The TS3A5017 is a dual single-pole quadruple-throw
(4:1) analog switch that is designed to operate from
2.3 V to 3.6 V. This device can handle both digital
and analog signals, and signals up to V+ can be
transmitted in either direction.
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
2.3-V to 3.6-V Single-Supply Operation
FUNCTION TABLE
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
D TO S,
EN
IN2
IN1
S TO D
D = S1
D = S2
D = S3
D = S4
OFF
•
ESD Performance Tested Per JESD 22
L
L
L
L
H
L
L
L
H
L
–
2000-V Human-Body Model
(A114-B, Class II)
H
H
X
H
X
–
1000-V Charged-Device Model (C101)
APPLICATIONS
•
•
•
•
Sample-and-Hold Circuits
Battery-Powered Equipment
Audio and Video Signal Routing
Communication Circuits
D, DBQ, DGV, OR PW PACKAGE
(TOP VIEW)
RGY PACKAGE
(TOP VIEW)
RSV PACKAGE
(TOP VIEW)
1EN
1
V
+
Logic
Control
Logic
Control
V
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1EN
IN2
+
16
16 15 14 13
2EN
IN1
IN2
2
3
4
5
6
7
15
14 IN1
2EN
1S
1S
1S
1
2
3
4
12
11
10
9
IN1
1S
4
4
3
2
1S
4
2S
4
1S
3
2S
4
Exposed
Center
Pad
1S
3
2S
2S
2S
2S
13
12
11
10
4
3
2
1
2S
3
1S
2
2S
3
1S
2
1S
2S
2
1
1S
2S
2
1S
1
1
5
6
7
8
2S
1
1D
1D
8
9
GND
2D
GND
2D
If exposed center pad is used, it must be
connected as a secondary ground
or left electrically open.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2008, Texas Instruments Incorporated
TS3A5017
SCDS188D–JANUARY 2005–REVISED DECEMBER 2008 .......................................................................................................................................... www.ti.com
ORDERING INFORMATION
TA
PACKAGE(1)(2)
ORDERABLE PART NUMBER
TS3A5017RSVR
TS3A5017RGYR
TS3A5017D
TOP-SIDE MARKING
µQFN – RSV
Tape and reel
ZVL
QFN – RGY
Tape and reel
Tube
YA017
SOIC – D
TS3A5017
YA017
Tape and reel
Tape and reel
Tube
TS3A5017DR
–40°C to 85°C
SSOP (QSOP) – DBQ
TSSOP – PW
TS3A5017DBQR
TS3A5017PW
YA017
Tape and reel
Tape and reel
TS3A5017PWR
TVSOP – DGV
TS3A5017DGVR
YA017
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
SUMMARY OF CHARACTERISTICS
V+ = 3.3 V, TA = 25°C
Dual Analog
Configuration
Multiplexer/Demultiplexer
(4:1 Mux/Demux)
Number of channels
2
11 Ω
ON-state resistance (ron
)
ON-state resistance match (Δron
)
1 Ω
ON-state resistance flatness (ron(flat)
)
7 Ω
Turn-on/turn-off time (tON/tOFF
Charge injection (QC)
Bandwidth (BW)
)
5 ns/1.5 ns
5 pC
165 MHz
–48 dB at 10 MHz
–49 dB at 10 MHz
0.21%
OFF isolation (OISO
Crosstalk (XTALK
Total harmonic distortion (THD)
)
)
Leakage current (ID(OFF)/IS(OFF)
)
±0.1 µA
Power-supply current (I+)
2.5 µA
16-pin QFN, µQFN, SOIC,
SSOP, TSSOP, or TVSOP
Package options
2
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TS3A5017
www.ti.com .......................................................................................................................................... SCDS188D–JANUARY 2005–REVISED DECEMBER 2008
ABSOLUTE MINIMUM AND MAXIMUM RATINGS(1)(2)
over operating free-air temperature range (unless otherwise noted)
MIN
–0.5
–0.5
MAX
4.6
UNIT
V
V+
VS, VD Analog voltage(3)(4)
Supply voltage(3)
4.6
V
ISK
,
Analog port clamp current
VS, VD < 0
–50
mA
IDK
IS, ID
VI
On-state switch current
VS, VD = 0 to 7 V
–128
–0.5
–50
128
4.6
mA
V
Digital input voltage
IIK
Digital input clamp current(3)(4)
Continuous current through V+
Continuous current through GND
Storage temperature
VI < 0
mA
mA
mA
°C
I+
100
IGND
Tstg
–100
–65
150
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
PACKAGE THERMAL IMPEDANCE
UNIT
D package
73
82
DB package
DGV package
DW package
RGY package
RSV package
120
108
91.6
184
θJA
Package thermal impedance(1)
°C/W
(1) The package thermal impedance is calculated in accordance with JESD 51-7.
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ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY(1)
V+ = 2.7 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
Analog signal
range
VD, VS
ron
0
V+
V
25°C
Full
11
1
12
14
2
ON-state
resistance
0 ≤ VS ≤ V+,
ID = –32 mA,
Switch ON,
See Figure 13
3 V
3 V
Ω
ON-state
resistance
match
between
channels
25°C
VS = 2.1 V,
ID = –32 mA,
Switch ON,
See Figure 13
Δron
Ω
Ω
Full
3
ON-state
resistance
flatness
25°C
Full
7
9
10
0 ≤ VS ≤ V+,
ID = –32 mA,
Switch ON,
See Figure 13
ron(flat)
3 V
VS = 1 V, VD = 3 V,
or
VS = 3 V, VD = 1 V,
25°C
Full
–0.1
–0.2
0.05
0.1
0.2
IS(OFF)
ISPWR(OFF)
ID(OFF)
3.6 V
0 V
S
Switch OFF,
See Figure 14
OFF leakage
current
µA
µA
25°C
Full
–1
–5
0.5
1
5
VS = 0 to 3.6 V,
VD = 3.6 V to 0,
VS = 1 V, VD = 3 V,
or
VS = 3 V, VD = 1 V,
25°C
–0.1
0.05
0.1
3.6 V
0 V
D
Full
–0.2
0.2
Switch OFF,
See Figure 14
OFF leakage
current
25°C
Full
–1
–5
0.5
1
5
VD = 0 to 3.6 V,
VS = 3.6 V to 0,
IDPWR(OFF)
S
VS = 1 V, VD = Open,
or
VS = 3 V, VD = Open,
25°C
–0.1
0.05
0.1
Switch ON,
See Figure 15
ON leakage
current
IS(ON)
3.6 V
µA
µA
Full
25°C
Full
–0.2
–0.1
–0.2
0.2
0.1
0.2
D
VD = 1 V, VS = Open,
or
VD = 3 V, VS = Open,
0.05
Switch ON,
See Figure 15
ON leakage
current
ID(ON)
3.6 V
Digital Control Inputs (IN1, IN2, EN)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
2
0
V+
0.8
1
V
V
25°C
Full
–1
–1
0.05
Input leakage
current
IIH, IIL
VI = V+ or 0
3.6 V
µA
1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
4
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www.ti.com .......................................................................................................................................... SCDS188D–JANUARY 2005–REVISED DECEMBER 2008
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (continued)
V+ = 2.7 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
25°C
Full
3.3 V
3 V to 3.6 V
3.3 V
1
1
5
9.5
10.5
3.5
VD = 2 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
Turn-on time
tON
ns
25°C
Full
0.5
0.5
1.5
VD = 2 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
QC
ns
3 V to 3.6 V
4.5
VGEN = 0, RGEN = 0,
CL = 0.1 nF,
Charge injection
See Figure 22
See Figure 16
25°C
3.3 V
5
pC
S
OFF
capacitance
VS = V+ or GND,
Switch OFF,
CS(OFF)
25°C
3.3 V
4.5
pF
pF
D
OFF
capacitance
VD = V+ or GND,
Switch OFF,
CD(OFF)
See Figure 16
25°C
3.3 V
19
S
VS = V+ or GND,
Switch ON,
CS(ON)
CD(ON)
CI
See Figure 16
See Figure 16
See Figure 16
See Figure 18
See Figure 19
See Figure 20
See Figure 21
25°C
25°C
25°C
25°C
25°C
25°C
25°C
25°C
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
25
25
pF
pF
ON capacitance
D
VD = V+ or GND,
Switch ON,
ON capacitance
Digital input
capacitance
VI = V+ or GND,
2
pF
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
BW
165
–48
–49
–74
0.21
MHz
dB
dB
dB
%
RL = 50 Ω,
f = 1 MHz,
OISO
RL = 50 Ω,
f = 1 MHz,
XTALK
XTALK(ADJ)
THD
Crosstalk
adjacent
RL = 50 Ω,
f = 1 MHz,
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
Supply
25°C
Full
2.5
7
Positive supply
current
I+
VI = V+ or GND,
Switch ON or OFF
3.6 V
µA
10
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ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY(1)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
Analog signal
range
VD, VS
ron
0
V+
V
25°C
Full
20.5
1
22
24
2
ON-state
resistance
0 ≤ VS ≤ V+,
ID = –24 mA,
Switch ON,
See Figure 13
2.3 V
2.3 V
2.3 V
2.7 V
0 V
Ω
ON-state
resistance match
between channels
25°C
VS = 1.6 V,
ID = –24 mA,
Switch ON,
See Figure 13
Δron
Ω
Ω
Full
3
25°C
Full
16
18
20
ON-state
resistance flatness
0 ≤ VS ≤ V+,
ID = –24 mA,
Switch ON,
See Figure 13
ron(flat)
VS = 0.5 V, VD = 2.2 V,
or
VS = 2.2 V, VD = 0.5 V,
25°C
–0.1
–0.2
0.05
0.1
IS(OFF)
S
Full
0.2
Switch OFF,
See Figure 14
OFF leakage
current
µA
µA
25°C
Full
–1
–5
0.5
1
5
VS = 0 to 2.7 V,
VD = 2.7 V to 0,
ISPWR(OFF)
VS = 0.5 V, VD = 2.2 V,
or
VS = 2.2 V, VD = 0.5V,
25°C
–0.1
0.05
0.1
ID(OFF)
2.7 V
0 V
D
Full
–0.2
0.2
Switch OFF,
See Figure 14
OFF leakage
current
25°C
Full
–1
–5
0.5
1
5
VD = 0 to 2.7 V,
VS = 2.7 V to 0,
IDPWR(OFF)
S
VS = 0.5 V, VD = Open,
or
VS = 2.2 V, VD = Open,
25°C
–0.1
0.05
0.1
Switch ON,
See Figure 15
ON leakage
current
IS(ON)
2.7 V
µA
µA
Full
25°C
Full
–0.2
–0.1
–0.2
0.2
0.1
0.2
D
VD = 0.5 V, VS = Open,
or
VD = 2.2 V, VS = Open,
0.05
Switch ON,
See Figure 15
ON leakage
current
ID(ON)
2.7 V
Digital Control Inputs (IN1, IN2, EN)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
1.7
0
V+
0.7
1
V
V
25°C
Full
–1
–1
0.05
Input leakage
current
IIH, IIL
VI = V+ or 0
2.7 V
µA
1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
6
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TS3A5017
www.ti.com .......................................................................................................................................... SCDS188D–JANUARY 2005–REVISED DECEMBER 2008
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
25°C
Full
2.5 V
1.5
1
5
2
8
10
4.5
6
VD = 2 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
Turn-on time
tON
ns
ns
2.3 V to
2.7 V
25°C
Full
2.5 V
0.3
0.3
VD = 2 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
Turn-off time
tOFF
2.3 V to
2.7 V
VGEN = 0, RGEN = 0,
CL = 0.1 nF,
Charge injection
QC
CS(OFF)
CD(OFF)
CS(ON)
CD(ON)
CI
See Figure 22
See Figure 16
See Figure 16
See Figure 16
See Figure 16
See Figure 16
See Figure 18
See Figure 19
See Figure 20
See Figure 21
25°C
25°C
25°C
25°C
25°C
25°C
25°C
25°C
25°C
25°C
25°C
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
pC
pF
pF
pF
pF
pF
MHz
dB
dB
dB
%
S
VS = V+ or GND,
Switch OFF,
4.5
18.5
24
OFF capacitance
D
VD = V+ or GND,
Switch OFF,
OFF capacitance
S
VS = V+ or GND,
Switch ON,
ON capacitance
D
VD = V+ or GND,
Switch ON,
24
ON capacitance
Digital input
capacitance
VI = V+ or GND,
2
RL = 50 Ω,
Switch ON,
Bandwidth
BW
165
–48
–49
–74
0.29
RL = 50 Ω,
f = 1 MHz,
OFF isolation
Crosstalk
OISO
RL = 50 Ω,
f = 1 MHz,
XTALK
XTALK(ADJ)
THD
RL = 50 Ω,
f = 1 MHz,
Crosstalk adjacent
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
Supply
25°C
Full
2.5
7
Positive supply
current
I+
VI = V+ or GND,
Switch ON or OFF
2.7 V
µA
10
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TYPICAL PERFORMANCE
18
16
14
12
10
8
12
10
8
T
= 25°C
A
V
= 2.5 V
+
85°C
25°C
6
6
V
+
= 3.3 V
4
4
–40°C
2
2
0
0
1
2
3
4
0
V
(V)
0.0
0.5
1.0
1.5
2.0
(V)
2.5
3.0
3.5
COM
V
COM
Figure 1. ron vs VCOM
Figure 2. ron vs VCOM (V+ = 3.3 V)
18
40
I
NC(ON)
16
14
12
10
8
I
COM(ON)
30
20
10
0
I
NO(ON)
85°C
25°C
I
I
COM(OFF)
NC(OFF)
6
4
I
NO(OFF)
2
–40°C
0
0.0
–40
25
85
0.5
1.0
1.5
2.0
2.5
3.0
T
(°C)
A
V
COM
(V)
Figure 3. ron vs VCOM (V+ = 2.5 V)
Figure 4. Leakage Current vs Temperature (V+ = 3.6 V)
9
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
2
1
0
V
= 3.3 V
t
+
ON
V
= 2.5 V
+
t
OFF
2.0
2.5
3.0
(V)
3.5
4.0
0.0
0.5
1.0
1.5
V
2.0
(V)
2.5
3.0
3.5
V
COM
+
Figure 5. Charge Injection (QC) vs VCOM
Figure 6. tON and tOFF vs Supply Voltage
8
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TYPICAL PERFORMANCE (continued)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
t
ON
V
IH
V
IL
t
OFF
2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0
(V)
–40
25
(°C)
85
V
+
T
A
Figure 7. tON and tOFF vs Temperature (V+ = 3.3 V)
Figure 8. Logic-Level Threshold vs V+
Figure 9. Bandwidth (Gain vs Frequency) (V+ = 3.3 V)
Figure 10. OFF Isolation and Crosstalk vs Frequency
(V+ = 3.3 V)
0.35
0.30
0.25
0.20
0.15
0.10
10
100
1000
10 K
100 K
(°C)
Frequency (Hz)
Figure 11. Total Harmonic Distortion vs Frequency
Figure 12. Power-Supply Current vs Temperature
(V+ = 3.6 V)
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PIN DESCRIPTION
PIN
NO.
NAME
DESCRIPTION
1
1EN
IN2
1S4
1S3
1S2
1S1
1D
Enable (active low)
2
Digital control to connect D to S
Analog I/O
3
4
Analog I/O
5
Analog I/O
6
Analog I/O
7
Common
8
GND Ground
9
2D
2S1
2S2
2S3
2S4
IN1
2EN
V+
Common
10
11
12
13
14
15
16
Analog I/O
Analog I/O
Analog I/O
Analog I/O
Digital control to connect D to S
Enable (active low)
Power supply
10
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Product Folder Link(s): TS3A5017
TS3A5017
www.ti.com .......................................................................................................................................... SCDS188D–JANUARY 2005–REVISED DECEMBER 2008
PARAMETER DESCRIPTION
SYMBOL
DESCRIPTION
VD
Voltage at D
Voltage at S
VNC
ron
Resistance between D and S ports when the channel is ON
Δron
Difference of ron between channels in a specific device
ron(flat)
IS(OFF)
ISPWR(OFF)
IS(ON)
ID(OFF)
IDPWR(OFF)
ID(ON)
VIH
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
Leakage current measured at the S port, with the corresponding channel (S to D) in the OFF state
Leakage current measured at the S port under the powered down mode, V+ = 0
Leakage current measured at the S port, with the corresponding channel (S to D) in the ON state and the output (D) open
Leakage current measured at the D port, with the corresponding channel (D to S) in the OFF state
Leakage current measured at the D port under the powered down mode, V+ = 0
Leakage current measured at the D port, with the corresponding channel (D to S) in the ON state and the output (S) open
Minimum input voltage for logic high for the control input (IN, EN)
VIL
Maximum input voltage for logic low for the control input (IN, EN)
VI
Voltage at the control input (IN, EN)
IIH, IIL
Leakage current measured at the control input (IN, EN)
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (D or S) signal when the switch is turning ON.
tON
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (D or S) signal when the switch is turning OFF.
tOFF
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (S or D) output.
This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input. Charge
injection, QC = CL × ΔVD, CL is the load capacitance and ΔVD is the change in analog output voltage.
QC
CS(OFF)
CS(ON)
CD(OFF)
CD(ON)
CI
Capacitance at the S port when the corresponding channel (S to D) is OFF
Capacitance at the S port when the corresponding channel (S to D) is ON
Capacitance at the D port when the corresponding channel (D to S) is OFF
Capacitance at the D port when the corresponding channel (D to S) is ON
Capacitance of control input (IN)
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (S to D) in the OFF state.
OISO
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (1S1 to 2S1). This is
measured in a specific frequency and in dB.
XTALK
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root
mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental
harmonic.
THD
I+
Static power-supply current with the control (IN) pin at V+ or GND
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PARAMETER MEASUREMENT INFORMATION
Channel ON
V
– V
or V
s1
D
=
S2-S4
r
Ω
on
I
D
V
= V or V
IH IL
I
Figure 13. ON-State Resistance (ron)
OFF-State Leakage Current
Channel OFF
V = V or V
I
IH
IL
V
or V
= 0 to V
+
S1
S2-S4
and
= V to 0
V
D
+
Figure 14. OFF-State Leakage Current (ID(OFF), IS(OFF)
)
ON-State Leakage Current
Channel ON
V = V or V
I
IH
IL
Figure 15. ON-State Leakage Current (ID(ON), IS(ON)
)
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Product Folder Link(s): TS3A5017
TS3A5017
www.ti.com .......................................................................................................................................... SCDS188D–JANUARY 2005–REVISED DECEMBER 2008
PARAMETER MEASUREMENT INFORMATION (continued)
V
= V to GND
+
BIAS
V = V or V
IL
I
IH
Capacitance is measured at S1,
S2-S4, D, and IN inputs during
ON and OFF conditions.
Figure 16. Capacitance (CI, CD(OFF), CD(ON), CS(OFF), CS(ON)
)
C
L
35 pF
35 pF
300 Ω
300 Ω
(C)
(B)
V
0
+
(B)
(A)
t
OFF
A. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B. CL includes probe and jig capacitance.
C. See Electrical Characteristics for VD.
Figure 17. Turn-On (tON) and Turn-Off Time (tOFF
)
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SCDS188D–JANUARY 2005–REVISED DECEMBER 2008 .......................................................................................................................................... www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
Channel ON: S to D
1
V = V or GND
50 Ω
I
+
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
50 Ω
DC Bias = 350 mV
Figure 18. Bandwidth (BW)
Channel OFF: S to D
V = V or GND
50 Ω
I
+
50 Ω
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
50 Ω
DC Bias = 350 mV
Figure 19. OFF Isolation (OISO
)
Channel ON: S to D
1
Channel OFF: S -S to D
2
4
50 Ω
V = V or GND
I
+
V
S2-S4
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
50 Ω
50 Ω
DC Bias = 350 mV
Figure 20. Crosstalk (XTALK
)
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TS3A5017
www.ti.com .......................................................................................................................................... SCDS188D–JANUARY 2005–REVISED DECEMBER 2008
PARAMETER MEASUREMENT INFORMATION (continued)
Channel ON: S to D
1
50 Ω
V
1S
2S
1S
1
1
1D
2D
V
2S
50 Ω
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
50 Ω
DC Bias = 350 mV
Figure 21. Adjacent Crosstalk (XTALK
)
V
V
IH
IL
ΔV
D
V
= 0 to V
= 0
GEN
+
R
C
GEN
= 0.1 nF
L
Q
= C X ΔV
D
C
L
V = V or V
IH
I
IL
A. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B. CL includes probe and jig capacitance.
Figure 22. Charge Injection (QC)
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PARAMETER MEASUREMENT INFORMATION (continued)
10 µF
10 µF
(A)
600 Ω
600 Ω
600 Ω
A. CL includes probe and jig capacitance.
Figure 23. Total Harmonic Distortion (THD)
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PACKAGE OPTION ADDENDUM
www.ti.com
21-Dec-2009
PACKAGING INFORMATION
Orderable Device
TS3A5017D
Status (1)
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
SOIC
D
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
40 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
TS3A5017DBQR
TS3A5017DBQRE4
TS3A5017DBQRG4
TS3A5017DE4
SSOP/
QSOP
DBQ
DBQ
DBQ
D
2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
SSOP/
QSOP
2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
SSOP/
QSOP
2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
SOIC
40 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
TS3A5017DG4
SOIC
D
40 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
TS3A5017DGVR
TS3A5017DGVRE4
TS3A5017DGVRG4
TS3A5017DR
TVSOP
TVSOP
TVSOP
SOIC
DGV
DGV
DGV
D
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
TS3A5017DRE4
TS3A5017DRG4
TS3A5017PW
SOIC
D
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
SOIC
D
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
VQFN
VQFN
PW
PW
PW
PW
PW
PW
RGY
RGY
90 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
TS3A5017PWE4
TS3A5017PWG4
TS3A5017PWR
TS3A5017PWRE4
TS3A5017PWRG4
TS3A5017RGYR
TS3A5017RGYRG4
90 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
90 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
TS3A5017RSV
PREVIEW
ACTIVE
UQFN
UQFN
RSV
RSV
16
16
TBD
Call TI
Call TI
TS3A5017RSVR
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
TS3A5017RSVRG4
ACTIVE
UQFN
RSV
16
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
21-Dec-2009
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
31-Jul-2010
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TS3A5017DGVR
TS3A5017DR
TVSOP
SOIC
DGV
D
16
16
16
16
16
2000
2500
2000
3000
3000
330.0
330.0
330.0
330.0
180.0
12.4
16.4
12.4
12.4
12.4
6.8
6.5
6.9
3.8
2.1
4.0
10.3
5.6
1.6
2.1
8.0
8.0
8.0
8.0
4.0
12.0
16.0
12.0
12.0
12.0
Q1
Q1
Q1
Q1
Q1
TS3A5017PWR
TS3A5017RGYR
TS3A5017RSVR
TSSOP
VQFN
UQFN
PW
RGY
RSV
1.6
4.3
1.5
2.9
0.75
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
31-Jul-2010
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TS3A5017DGVR
TS3A5017DR
TVSOP
SOIC
DGV
D
16
16
16
16
16
2000
2500
2000
3000
3000
346.0
333.2
346.0
346.0
203.0
346.0
345.9
346.0
346.0
203.0
29.0
28.6
29.0
29.0
35.0
TS3A5017PWR
TS3A5017RGYR
TS3A5017RSVR
TSSOP
VQFN
UQFN
PW
RGY
RSV
Pack Materials-Page 2
MECHANICAL DATA
MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999
PW (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0,30
0,19
M
0,10
0,65
14
8
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
0,25
1
7
0°–8°
A
0,75
0,50
Seating Plane
0,10
0,15
0,05
1,20 MAX
PINS **
8
14
16
20
24
28
DIM
3,10
2,90
5,10
4,90
5,10
4,90
6,60
6,40
7,90
9,80
9,60
A MAX
A MIN
7,70
4040064/F 01/97
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion not to exceed 0,15.
D. Falls within JEDEC MO-153
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相关型号:
TS3A5017RGYR
14-OHM DUAL SP4T ANALOG SWITCH 3.3-V/2.5-V DUAL 4:1 ANALOG MULTIPLEXER/DEMULTIPLEXER
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