TS3A5017PWE4 [TI]

DUAL SP4T ANALOG SWITCH 3.3-V/2.5-V DUAL 4:1 ANALOG MULTIPLEXER/DEMULTIPLEXER; 双SP4T模拟开关3.3 -V / 2.5 V双4 : 1模拟复用器/解复用器
TS3A5017PWE4
型号: TS3A5017PWE4
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

DUAL SP4T ANALOG SWITCH 3.3-V/2.5-V DUAL 4:1 ANALOG MULTIPLEXER/DEMULTIPLEXER
双SP4T模拟开关3.3 -V / 2.5 V双4 : 1模拟复用器/解复用器

解复用器 开关
文件: 总30页 (文件大小:1127K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TS3A5017  
www.ti.com .......................................................................................................................................... SCDS188DJANUARY 2005REVISED DECEMBER 2008  
DUAL SP4T ANALOG SWITCH  
3.3-V/2.5-V DUAL 4:1 ANALOG MULTIPLEXER/DEMULTIPLEXER  
1
FEATURES  
DESCRIPTION  
Isolation in the Powered-Down Mode, V+ = 0  
Low ON-State Resistance  
The TS3A5017 is a dual single-pole quadruple-throw  
(4:1) analog switch that is designed to operate from  
2.3 V to 3.6 V. This device can handle both digital  
and analog signals, and signals up to V+ can be  
transmitted in either direction.  
Low Charge Injection  
Excellent ON-State Resistance Matching  
Low Total Harmonic Distortion (THD)  
2.3-V to 3.6-V Single-Supply Operation  
FUNCTION TABLE  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
D TO S,  
EN  
IN2  
IN1  
S TO D  
D = S1  
D = S2  
D = S3  
D = S4  
OFF  
ESD Performance Tested Per JESD 22  
L
L
L
L
H
L
L
L
H
L
2000-V Human-Body Model  
(A114-B, Class II)  
H
H
X
H
X
1000-V Charged-Device Model (C101)  
APPLICATIONS  
Sample-and-Hold Circuits  
Battery-Powered Equipment  
Audio and Video Signal Routing  
Communication Circuits  
D, DBQ, DGV, OR PW PACKAGE  
(TOP VIEW)  
RGY PACKAGE  
(TOP VIEW)  
RSV PACKAGE  
(TOP VIEW)  
1EN  
1
V
+
Logic  
Control  
Logic  
Control  
V
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
1EN  
IN2  
+
16  
16 15 14 13  
2EN  
IN1  
IN2  
2
3
4
5
6
7
15  
14 IN1  
2EN  
1S  
1S  
1S  
1
2
3
4
12  
11  
10  
9
IN1  
1S  
4
4
3
2
1S  
4
2S  
4
1S  
3
2S  
4
Exposed  
Center  
Pad  
1S  
3
2S  
2S  
2S  
2S  
13  
12  
11  
10  
4
3
2
1
2S  
3
1S  
2
2S  
3
1S  
2
1S  
2S  
2
1
1S  
2S  
2
1S  
1
1
5
6
7
8
2S  
1
1D  
1D  
8
9
GND  
2D  
GND  
2D  
If exposed center pad is used, it must be  
connected as a secondary ground  
or left electrically open.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2005–2008, Texas Instruments Incorporated  
TS3A5017  
SCDS188DJANUARY 2005REVISED DECEMBER 2008 .......................................................................................................................................... www.ti.com  
ORDERING INFORMATION  
TA  
PACKAGE(1)(2)  
ORDERABLE PART NUMBER  
TS3A5017RSVR  
TS3A5017RGYR  
TS3A5017D  
TOP-SIDE MARKING  
µQFN – RSV  
Tape and reel  
ZVL  
QFN – RGY  
Tape and reel  
Tube  
YA017  
SOIC – D  
TS3A5017  
YA017  
Tape and reel  
Tape and reel  
Tube  
TS3A5017DR  
–40°C to 85°C  
SSOP (QSOP) – DBQ  
TSSOP – PW  
TS3A5017DBQR  
TS3A5017PW  
YA017  
Tape and reel  
Tape and reel  
TS3A5017PWR  
TVSOP – DGV  
TS3A5017DGVR  
YA017  
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
website at www.ti.com.  
SUMMARY OF CHARACTERISTICS  
V+ = 3.3 V, TA = 25°C  
Dual Analog  
Configuration  
Multiplexer/Demultiplexer  
(4:1 Mux/Demux)  
Number of channels  
2
11  
ON-state resistance (ron  
)
ON-state resistance match (Δron  
)
1 Ω  
ON-state resistance flatness (ron(flat)  
)
7 Ω  
Turn-on/turn-off time (tON/tOFF  
Charge injection (QC)  
Bandwidth (BW)  
)
5 ns/1.5 ns  
5 pC  
165 MHz  
–48 dB at 10 MHz  
–49 dB at 10 MHz  
0.21%  
OFF isolation (OISO  
Crosstalk (XTALK  
Total harmonic distortion (THD)  
)
)
Leakage current (ID(OFF)/IS(OFF)  
)
±0.1 µA  
Power-supply current (I+)  
2.5 µA  
16-pin QFN, µQFN, SOIC,  
SSOP, TSSOP, or TVSOP  
Package options  
2
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Copyright © 2005–2008, Texas Instruments Incorporated  
Product Folder Link(s): TS3A5017  
TS3A5017  
www.ti.com .......................................................................................................................................... SCDS188DJANUARY 2005REVISED DECEMBER 2008  
ABSOLUTE MINIMUM AND MAXIMUM RATINGS(1)(2)  
over operating free-air temperature range (unless otherwise noted)  
MIN  
–0.5  
–0.5  
MAX  
4.6  
UNIT  
V
V+  
VS, VD Analog voltage(3)(4)  
Supply voltage(3)  
4.6  
V
ISK  
,
Analog port clamp current  
VS, VD < 0  
–50  
mA  
IDK  
IS, ID  
VI  
On-state switch current  
VS, VD = 0 to 7 V  
–128  
–0.5  
–50  
128  
4.6  
mA  
V
Digital input voltage  
IIK  
Digital input clamp current(3)(4)  
Continuous current through V+  
Continuous current through GND  
Storage temperature  
VI < 0  
mA  
mA  
mA  
°C  
I+  
100  
IGND  
Tstg  
–100  
–65  
150  
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating  
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.  
(3) All voltages are with respect to ground, unless otherwise specified.  
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.  
PACKAGE THERMAL IMPEDANCE  
UNIT  
D package  
73  
82  
DB package  
DGV package  
DW package  
RGY package  
RSV package  
120  
108  
91.6  
184  
θJA  
Package thermal impedance(1)  
°C/W  
(1) The package thermal impedance is calculated in accordance with JESD 51-7.  
Copyright © 2005–2008, Texas Instruments Incorporated  
Submit Documentation Feedback  
3
Product Folder Link(s): TS3A5017  
TS3A5017  
SCDS188DJANUARY 2005REVISED DECEMBER 2008 .......................................................................................................................................... www.ti.com  
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY(1)  
V+ = 2.7 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)  
PARAMETER  
Analog Switch  
SYMBOL  
TEST CONDITIONS  
TA  
V+  
MIN  
TYP MAX UNIT  
Analog signal  
range  
VD, VS  
ron  
0
V+  
V
25°C  
Full  
11  
1
12  
14  
2
ON-state  
resistance  
0 VS V+,  
ID = –32 mA,  
Switch ON,  
See Figure 13  
3 V  
3 V  
ON-state  
resistance  
match  
between  
channels  
25°C  
VS = 2.1 V,  
ID = –32 mA,  
Switch ON,  
See Figure 13  
Δron  
Full  
3
ON-state  
resistance  
flatness  
25°C  
Full  
7
9
10  
0 VS V+,  
ID = –32 mA,  
Switch ON,  
See Figure 13  
ron(flat)  
3 V  
VS = 1 V, VD = 3 V,  
or  
VS = 3 V, VD = 1 V,  
25°C  
Full  
–0.1  
–0.2  
0.05  
0.1  
0.2  
IS(OFF)  
ISPWR(OFF)  
ID(OFF)  
3.6 V  
0 V  
S
Switch OFF,  
See Figure 14  
OFF leakage  
current  
µA  
µA  
25°C  
Full  
–1  
–5  
0.5  
1
5
VS = 0 to 3.6 V,  
VD = 3.6 V to 0,  
VS = 1 V, VD = 3 V,  
or  
VS = 3 V, VD = 1 V,  
25°C  
–0.1  
0.05  
0.1  
3.6 V  
0 V  
D
Full  
–0.2  
0.2  
Switch OFF,  
See Figure 14  
OFF leakage  
current  
25°C  
Full  
–1  
–5  
0.5  
1
5
VD = 0 to 3.6 V,  
VS = 3.6 V to 0,  
IDPWR(OFF)  
S
VS = 1 V, VD = Open,  
or  
VS = 3 V, VD = Open,  
25°C  
–0.1  
0.05  
0.1  
Switch ON,  
See Figure 15  
ON leakage  
current  
IS(ON)  
3.6 V  
µA  
µA  
Full  
25°C  
Full  
–0.2  
–0.1  
–0.2  
0.2  
0.1  
0.2  
D
VD = 1 V, VS = Open,  
or  
VD = 3 V, VS = Open,  
0.05  
Switch ON,  
See Figure 15  
ON leakage  
current  
ID(ON)  
3.6 V  
Digital Control Inputs (IN1, IN2, EN)(2)  
Input logic high  
Input logic low  
VIH  
VIL  
Full  
Full  
2
0
V+  
0.8  
1
V
V
25°C  
Full  
–1  
–1  
0.05  
Input leakage  
current  
IIH, IIL  
VI = V+ or 0  
3.6 V  
µA  
1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum  
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,  
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.  
4
Submit Documentation Feedback  
Copyright © 2005–2008, Texas Instruments Incorporated  
Product Folder Link(s): TS3A5017  
TS3A5017  
www.ti.com .......................................................................................................................................... SCDS188DJANUARY 2005REVISED DECEMBER 2008  
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (continued)  
V+ = 2.7 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)  
PARAMETER  
Dynamic  
SYMBOL  
TEST CONDITIONS  
TA  
V+  
MIN  
TYP MAX UNIT  
25°C  
Full  
3.3 V  
3 V to 3.6 V  
3.3 V  
1
1
5
9.5  
10.5  
3.5  
VD = 2 V,  
RL = 300 ,  
CL = 35 pF,  
See Figure 17  
Turn-on time  
tON  
ns  
25°C  
Full  
0.5  
0.5  
1.5  
VD = 2 V,  
RL = 300 ,  
CL = 35 pF,  
See Figure 17  
Turn-off time  
tOFF  
QC  
ns  
3 V to 3.6 V  
4.5  
VGEN = 0, RGEN = 0,  
CL = 0.1 nF,  
Charge injection  
See Figure 22  
See Figure 16  
25°C  
3.3 V  
5
pC  
S
OFF  
capacitance  
VS = V+ or GND,  
Switch OFF,  
CS(OFF)  
25°C  
3.3 V  
4.5  
pF  
pF  
D
OFF  
capacitance  
VD = V+ or GND,  
Switch OFF,  
CD(OFF)  
See Figure 16  
25°C  
3.3 V  
19  
S
VS = V+ or GND,  
Switch ON,  
CS(ON)  
CD(ON)  
CI  
See Figure 16  
See Figure 16  
See Figure 16  
See Figure 18  
See Figure 19  
See Figure 20  
See Figure 21  
25°C  
25°C  
25°C  
25°C  
25°C  
25°C  
25°C  
25°C  
3.3 V  
3.3 V  
3.3 V  
3.3 V  
3.3 V  
3.3 V  
3.3 V  
3.3 V  
25  
25  
pF  
pF  
ON capacitance  
D
VD = V+ or GND,  
Switch ON,  
ON capacitance  
Digital input  
capacitance  
VI = V+ or GND,  
2
pF  
RL = 50 ,  
Switch ON,  
Bandwidth  
OFF isolation  
Crosstalk  
BW  
165  
–48  
–49  
–74  
0.21  
MHz  
dB  
dB  
dB  
%
RL = 50 ,  
f = 1 MHz,  
OISO  
RL = 50 ,  
f = 1 MHz,  
XTALK  
XTALK(ADJ)  
THD  
Crosstalk  
adjacent  
RL = 50 ,  
f = 1 MHz,  
Total harmonic  
distortion  
RL = 600 ,  
CL = 50 pF,  
f = 20 Hz to 20 kHz,  
See Figure 23  
Supply  
25°C  
Full  
2.5  
7
Positive supply  
current  
I+  
VI = V+ or GND,  
Switch ON or OFF  
3.6 V  
µA  
10  
Copyright © 2005–2008, Texas Instruments Incorporated  
Submit Documentation Feedback  
5
Product Folder Link(s): TS3A5017  
TS3A5017  
SCDS188DJANUARY 2005REVISED DECEMBER 2008 .......................................................................................................................................... www.ti.com  
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY(1)  
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)  
PARAMETER  
Analog Switch  
SYMBOL  
TEST CONDITIONS  
TA  
V+  
MIN  
TYP MAX UNIT  
Analog signal  
range  
VD, VS  
ron  
0
V+  
V
25°C  
Full  
20.5  
1
22  
24  
2
ON-state  
resistance  
0 VS V+,  
ID = –24 mA,  
Switch ON,  
See Figure 13  
2.3 V  
2.3 V  
2.3 V  
2.7 V  
0 V  
ON-state  
resistance match  
between channels  
25°C  
VS = 1.6 V,  
ID = –24 mA,  
Switch ON,  
See Figure 13  
Δron  
Full  
3
25°C  
Full  
16  
18  
20  
ON-state  
resistance flatness  
0 VS V+,  
ID = –24 mA,  
Switch ON,  
See Figure 13  
ron(flat)  
VS = 0.5 V, VD = 2.2 V,  
or  
VS = 2.2 V, VD = 0.5 V,  
25°C  
–0.1  
–0.2  
0.05  
0.1  
IS(OFF)  
S
Full  
0.2  
Switch OFF,  
See Figure 14  
OFF leakage  
current  
µA  
µA  
25°C  
Full  
–1  
–5  
0.5  
1
5
VS = 0 to 2.7 V,  
VD = 2.7 V to 0,  
ISPWR(OFF)  
VS = 0.5 V, VD = 2.2 V,  
or  
VS = 2.2 V, VD = 0.5V,  
25°C  
–0.1  
0.05  
0.1  
ID(OFF)  
2.7 V  
0 V  
D
Full  
–0.2  
0.2  
Switch OFF,  
See Figure 14  
OFF leakage  
current  
25°C  
Full  
–1  
–5  
0.5  
1
5
VD = 0 to 2.7 V,  
VS = 2.7 V to 0,  
IDPWR(OFF)  
S
VS = 0.5 V, VD = Open,  
or  
VS = 2.2 V, VD = Open,  
25°C  
–0.1  
0.05  
0.1  
Switch ON,  
See Figure 15  
ON leakage  
current  
IS(ON)  
2.7 V  
µA  
µA  
Full  
25°C  
Full  
–0.2  
–0.1  
–0.2  
0.2  
0.1  
0.2  
D
VD = 0.5 V, VS = Open,  
or  
VD = 2.2 V, VS = Open,  
0.05  
Switch ON,  
See Figure 15  
ON leakage  
current  
ID(ON)  
2.7 V  
Digital Control Inputs (IN1, IN2, EN)(2)  
Input logic high  
Input logic low  
VIH  
VIL  
Full  
Full  
1.7  
0
V+  
0.7  
1
V
V
25°C  
Full  
–1  
–1  
0.05  
Input leakage  
current  
IIH, IIL  
VI = V+ or 0  
2.7 V  
µA  
1
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum  
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,  
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.  
6
Submit Documentation Feedback  
Copyright © 2005–2008, Texas Instruments Incorporated  
Product Folder Link(s): TS3A5017  
TS3A5017  
www.ti.com .......................................................................................................................................... SCDS188DJANUARY 2005REVISED DECEMBER 2008  
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued)  
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)  
PARAMETER  
Dynamic  
SYMBOL  
TEST CONDITIONS  
TA  
V+  
MIN  
TYP MAX UNIT  
25°C  
Full  
2.5 V  
1.5  
1
5
2
8
10  
4.5  
6
VD = 2 V,  
RL = 300 ,  
CL = 35 pF,  
See Figure 17  
Turn-on time  
tON  
ns  
ns  
2.3 V to  
2.7 V  
25°C  
Full  
2.5 V  
0.3  
0.3  
VD = 2 V,  
RL = 300 ,  
CL = 35 pF,  
See Figure 17  
Turn-off time  
tOFF  
2.3 V to  
2.7 V  
VGEN = 0, RGEN = 0,  
CL = 0.1 nF,  
Charge injection  
QC  
CS(OFF)  
CD(OFF)  
CS(ON)  
CD(ON)  
CI  
See Figure 22  
See Figure 16  
See Figure 16  
See Figure 16  
See Figure 16  
See Figure 16  
See Figure 18  
See Figure 19  
See Figure 20  
See Figure 21  
25°C  
25°C  
25°C  
25°C  
25°C  
25°C  
25°C  
25°C  
25°C  
25°C  
25°C  
2.5 V  
2.5 V  
2.5 V  
2.5 V  
2.5 V  
2.5 V  
2.5 V  
2.5 V  
2.5 V  
2.5 V  
2.5 V  
pC  
pF  
pF  
pF  
pF  
pF  
MHz  
dB  
dB  
dB  
%
S
VS = V+ or GND,  
Switch OFF,  
4.5  
18.5  
24  
OFF capacitance  
D
VD = V+ or GND,  
Switch OFF,  
OFF capacitance  
S
VS = V+ or GND,  
Switch ON,  
ON capacitance  
D
VD = V+ or GND,  
Switch ON,  
24  
ON capacitance  
Digital input  
capacitance  
VI = V+ or GND,  
2
RL = 50 ,  
Switch ON,  
Bandwidth  
BW  
165  
–48  
–49  
–74  
0.29  
RL = 50 ,  
f = 1 MHz,  
OFF isolation  
Crosstalk  
OISO  
RL = 50 ,  
f = 1 MHz,  
XTALK  
XTALK(ADJ)  
THD  
RL = 50 ,  
f = 1 MHz,  
Crosstalk adjacent  
Total harmonic  
distortion  
RL = 600 ,  
CL = 50 pF,  
f = 20 Hz to 20 kHz,  
See Figure 23  
Supply  
25°C  
Full  
2.5  
7
Positive supply  
current  
I+  
VI = V+ or GND,  
Switch ON or OFF  
2.7 V  
µA  
10  
Copyright © 2005–2008, Texas Instruments Incorporated  
Submit Documentation Feedback  
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Product Folder Link(s): TS3A5017  
TS3A5017  
SCDS188DJANUARY 2005REVISED DECEMBER 2008 .......................................................................................................................................... www.ti.com  
TYPICAL PERFORMANCE  
18  
16  
14  
12  
10  
8
12  
10  
8
T
= 25°C  
A
V
= 2.5 V  
+
85°C  
25°C  
6
6
V
+
= 3.3 V  
4
4
40°C  
2
2
0
0
1
2
3
4
0
V
(V)  
0.0  
0.5  
1.0  
1.5  
2.0  
(V)  
2.5  
3.0  
3.5  
COM  
V
COM  
Figure 1. ron vs VCOM  
Figure 2. ron vs VCOM (V+ = 3.3 V)  
18  
40  
I
NC(ON)  
16  
14  
12  
10  
8
I
COM(ON)  
30  
20  
10  
0
I
NO(ON)  
85°C  
25°C  
I
I
COM(OFF)  
NC(OFF)  
6
4
I
NO(OFF)  
2
40°C  
0
0.0  
–40  
25  
85  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
T
(°C)  
A
V
COM  
(V)  
Figure 3. ron vs VCOM (V+ = 2.5 V)  
Figure 4. Leakage Current vs Temperature (V+ = 3.6 V)  
9
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
8
7
6
5
4
3
2
1
0
V
= 3.3 V  
t
+
ON  
V
= 2.5 V  
+
t
OFF  
2.0  
2.5  
3.0  
(V)  
3.5  
4.0  
0.0  
0.5  
1.0  
1.5  
V
2.0  
(V)  
2.5  
3.0  
3.5  
V
COM  
+
Figure 5. Charge Injection (QC) vs VCOM  
Figure 6. tON and tOFF vs Supply Voltage  
8
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TYPICAL PERFORMANCE (continued)  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
t
ON  
V
IH  
V
IL  
t
OFF  
2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0  
(V)  
–40  
25  
(°C)  
85  
V
+
T
A
Figure 7. tON and tOFF vs Temperature (V+ = 3.3 V)  
Figure 8. Logic-Level Threshold vs V+  
Figure 9. Bandwidth (Gain vs Frequency) (V+ = 3.3 V)  
Figure 10. OFF Isolation and Crosstalk vs Frequency  
(V+ = 3.3 V)  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
10  
100  
1000  
10 K  
100 K  
(°C)  
Frequency (Hz)  
Figure 11. Total Harmonic Distortion vs Frequency  
Figure 12. Power-Supply Current vs Temperature  
(V+ = 3.6 V)  
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PIN DESCRIPTION  
PIN  
NO.  
NAME  
DESCRIPTION  
1
1EN  
IN2  
1S4  
1S3  
1S2  
1S1  
1D  
Enable (active low)  
2
Digital control to connect D to S  
Analog I/O  
3
4
Analog I/O  
5
Analog I/O  
6
Analog I/O  
7
Common  
8
GND Ground  
9
2D  
2S1  
2S2  
2S3  
2S4  
IN1  
2EN  
V+  
Common  
10  
11  
12  
13  
14  
15  
16  
Analog I/O  
Analog I/O  
Analog I/O  
Analog I/O  
Digital control to connect D to S  
Enable (active low)  
Power supply  
10  
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PARAMETER DESCRIPTION  
SYMBOL  
DESCRIPTION  
VD  
Voltage at D  
Voltage at S  
VNC  
ron  
Resistance between D and S ports when the channel is ON  
Δron  
Difference of ron between channels in a specific device  
ron(flat)  
IS(OFF)  
ISPWR(OFF)  
IS(ON)  
ID(OFF)  
IDPWR(OFF)  
ID(ON)  
VIH  
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions  
Leakage current measured at the S port, with the corresponding channel (S to D) in the OFF state  
Leakage current measured at the S port under the powered down mode, V+ = 0  
Leakage current measured at the S port, with the corresponding channel (S to D) in the ON state and the output (D) open  
Leakage current measured at the D port, with the corresponding channel (D to S) in the OFF state  
Leakage current measured at the D port under the powered down mode, V+ = 0  
Leakage current measured at the D port, with the corresponding channel (D to S) in the ON state and the output (S) open  
Minimum input voltage for logic high for the control input (IN, EN)  
VIL  
Maximum input voltage for logic low for the control input (IN, EN)  
VI  
Voltage at the control input (IN, EN)  
IIH, IIL  
Leakage current measured at the control input (IN, EN)  
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation  
delay between the digital control (IN) signal and analog output (D or S) signal when the switch is turning ON.  
tON  
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation  
delay between the digital control (IN) signal and analog output (D or S) signal when the switch is turning OFF.  
tOFF  
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (S or D) output.  
This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input. Charge  
injection, QC = CL × ΔVD, CL is the load capacitance and ΔVD is the change in analog output voltage.  
QC  
CS(OFF)  
CS(ON)  
CD(OFF)  
CD(ON)  
CI  
Capacitance at the S port when the corresponding channel (S to D) is OFF  
Capacitance at the S port when the corresponding channel (S to D) is ON  
Capacitance at the D port when the corresponding channel (D to S) is OFF  
Capacitance at the D port when the corresponding channel (D to S) is ON  
Capacitance of control input (IN)  
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific  
frequency, with the corresponding channel (S to D) in the OFF state.  
OISO  
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (1S1 to 2S1). This is  
measured in a specific frequency and in dB.  
XTALK  
BW  
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.  
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root  
mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental  
harmonic.  
THD  
I+  
Static power-supply current with the control (IN) pin at V+ or GND  
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PARAMETER MEASUREMENT INFORMATION  
Channel ON  
V
V  
or V  
s1  
D
=
S2-S4  
r
Ω
on  
I
D
V
= V or V  
IH IL  
I
Figure 13. ON-State Resistance (ron)  
OFF-State Leakage Current  
Channel OFF  
V = V or V  
I
IH  
IL  
V
or V  
= 0 to V  
+
S1  
S2-S4  
and  
= V to 0  
V
D
+
Figure 14. OFF-State Leakage Current (ID(OFF), IS(OFF)  
)
ON-State Leakage Current  
Channel ON  
V = V or V  
I
IH  
IL  
Figure 15. ON-State Leakage Current (ID(ON), IS(ON)  
)
12  
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TS3A5017  
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PARAMETER MEASUREMENT INFORMATION (continued)  
V
= V to GND  
+
BIAS  
V = V or V  
IL  
I
IH  
Capacitance is measured at S1,  
S2-S4, D, and IN inputs during  
ON and OFF conditions.  
Figure 16. Capacitance (CI, CD(OFF), CD(ON), CS(OFF), CS(ON)  
)
C
L
35 pF  
35 pF  
300 Ω  
300 Ω  
(C)  
(B)  
V
0
+
(B)  
(A)  
t
OFF  
A. All input pulses are supplied by generators having the following characteristics: PRR 10 MHz, ZO = 50 , tr < 5 ns,  
tf < 5 ns.  
B. CL includes probe and jig capacitance.  
C. See Electrical Characteristics for VD.  
Figure 17. Turn-On (tON) and Turn-Off Time (tOFF  
)
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PARAMETER MEASUREMENT INFORMATION (continued)  
Channel ON: S to D  
1
V = V or GND  
50 Ω  
I
+
Network Analyzer Setup  
Source Power = 0 dBm  
(632-mV P-P at 50-Ω load)  
50 Ω  
DC Bias = 350 mV  
Figure 18. Bandwidth (BW)  
Channel OFF: S to D  
V = V or GND  
50 Ω  
I
+
50 Ω  
Network Analyzer Setup  
Source Power = 0 dBm  
(632-mV P-P at 50-Ω load)  
50 Ω  
DC Bias = 350 mV  
Figure 19. OFF Isolation (OISO  
)
Channel ON: S to D  
1
Channel OFF: S -S to D  
2
4
50 Ω  
V = V or GND  
I
+
V
S2-S4  
Network Analyzer Setup  
Source Power = 0 dBm  
(632-mV P-P at 50-Ω load)  
50 Ω  
50 Ω  
DC Bias = 350 mV  
Figure 20. Crosstalk (XTALK  
)
14  
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PARAMETER MEASUREMENT INFORMATION (continued)  
Channel ON: S to D  
1
50 Ω  
V
1S  
2S  
1S  
1
1
1D  
2D  
V
2S  
50 Ω  
Network Analyzer Setup  
Source Power = 0 dBm  
(632-mV P-P at 50-Ω load)  
50 Ω  
DC Bias = 350 mV  
Figure 21. Adjacent Crosstalk (XTALK  
)
V
V
IH  
IL  
ΔV  
D
V
= 0 to V  
= 0  
GEN  
+
R
C
GEN  
= 0.1 nF  
L
Q
= C X ΔV  
D
C
L
V = V or V  
IH  
I
IL  
A. All input pulses are supplied by generators having the following characteristics: PRR 10 MHz, ZO = 50 , tr < 5 ns,  
tf < 5 ns.  
B. CL includes probe and jig capacitance.  
Figure 22. Charge Injection (QC)  
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PARAMETER MEASUREMENT INFORMATION (continued)  
10 µF  
10 µF  
(A)  
600 Ω  
600 Ω  
600 Ω  
A. CL includes probe and jig capacitance.  
Figure 23. Total Harmonic Distortion (THD)  
16  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
21-Dec-2009  
PACKAGING INFORMATION  
Orderable Device  
TS3A5017D  
Status (1)  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
Drawing  
SOIC  
D
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
40 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
TS3A5017DBQR  
TS3A5017DBQRE4  
TS3A5017DBQRG4  
TS3A5017DE4  
SSOP/  
QSOP  
DBQ  
DBQ  
DBQ  
D
2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
SSOP/  
QSOP  
2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
SSOP/  
QSOP  
2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
SOIC  
40 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
TS3A5017DG4  
SOIC  
D
40 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
TS3A5017DGVR  
TS3A5017DGVRE4  
TS3A5017DGVRG4  
TS3A5017DR  
TVSOP  
TVSOP  
TVSOP  
SOIC  
DGV  
DGV  
DGV  
D
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
TS3A5017DRE4  
TS3A5017DRG4  
TS3A5017PW  
SOIC  
D
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
SOIC  
D
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
TSSOP  
TSSOP  
TSSOP  
TSSOP  
TSSOP  
TSSOP  
VQFN  
VQFN  
PW  
PW  
PW  
PW  
PW  
PW  
RGY  
RGY  
90 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
TS3A5017PWE4  
TS3A5017PWG4  
TS3A5017PWR  
TS3A5017PWRE4  
TS3A5017PWRG4  
TS3A5017RGYR  
TS3A5017RGYRG4  
90 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
90 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
TS3A5017RSV  
PREVIEW  
ACTIVE  
UQFN  
UQFN  
RSV  
RSV  
16  
16  
TBD  
Call TI  
Call TI  
TS3A5017RSVR  
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
TS3A5017RSVRG4  
ACTIVE  
UQFN  
RSV  
16  
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
21-Dec-2009  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and  
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS  
compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is  
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the  
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take  
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on  
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited  
information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI  
to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
31-Jul-2010  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TS3A5017DGVR  
TS3A5017DR  
TVSOP  
SOIC  
DGV  
D
16  
16  
16  
16  
16  
2000  
2500  
2000  
3000  
3000  
330.0  
330.0  
330.0  
330.0  
180.0  
12.4  
16.4  
12.4  
12.4  
12.4  
6.8  
6.5  
6.9  
3.8  
2.1  
4.0  
10.3  
5.6  
1.6  
2.1  
8.0  
8.0  
8.0  
8.0  
4.0  
12.0  
16.0  
12.0  
12.0  
12.0  
Q1  
Q1  
Q1  
Q1  
Q1  
TS3A5017PWR  
TS3A5017RGYR  
TS3A5017RSVR  
TSSOP  
VQFN  
UQFN  
PW  
RGY  
RSV  
1.6  
4.3  
1.5  
2.9  
0.75  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
31-Jul-2010  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TS3A5017DGVR  
TS3A5017DR  
TVSOP  
SOIC  
DGV  
D
16  
16  
16  
16  
16  
2000  
2500  
2000  
3000  
3000  
346.0  
333.2  
346.0  
346.0  
203.0  
346.0  
345.9  
346.0  
346.0  
203.0  
29.0  
28.6  
29.0  
29.0  
35.0  
TS3A5017PWR  
TS3A5017RGYR  
TS3A5017RSVR  
TSSOP  
VQFN  
UQFN  
PW  
RGY  
RSV  
Pack Materials-Page 2  
MECHANICAL DATA  
MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999  
PW (R-PDSO-G**)  
PLASTIC SMALL-OUTLINE PACKAGE  
14 PINS SHOWN  
0,30  
0,19  
M
0,10  
0,65  
14  
8
0,15 NOM  
4,50  
4,30  
6,60  
6,20  
Gage Plane  
0,25  
1
7
0°8°  
A
0,75  
0,50  
Seating Plane  
0,10  
0,15  
0,05  
1,20 MAX  
PINS **  
8
14  
16  
20  
24  
28  
DIM  
3,10  
2,90  
5,10  
4,90  
5,10  
4,90  
6,60  
6,40  
7,90  
9,80  
9,60  
A MAX  
A MIN  
7,70  
4040064/F 01/97  
NOTES: A. All linear dimensions are in millimeters.  
B. This drawing is subject to change without notice.  
C. Body dimensions do not include mold flash or protrusion not to exceed 0,15.  
D. Falls within JEDEC MO-153  
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