TS3A5018_14 [TI]
10-Ω QUAD SPDT ANALOG SWITCH;型号: | TS3A5018_14 |
厂家: | TEXAS INSTRUMENTS |
描述: | 10-Ω QUAD SPDT ANALOG SWITCH 光电二极管 |
文件: | 总29页 (文件大小:829K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TS3A5018
www.ti.com
SCDS189D –JANUARY 2005–REVISED MARCH 2010
10-Ω QUAD SPDT ANALOG SWITCH
Check for Samples: TS3A5018
1
FEATURES
APPLICATIONS
•
•
•
•
Sample-and-Hold Circuits
Battery-Powered Equipment
Audio and Video Signal Routing
Communication Circuits
•
•
•
•
•
•
Low ON-State Resistance (10 Ω)
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
2.3-V to 3.6-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
•
ESD Performance Tested Per JESD 22
–
2000-V Human-Body Model
(A114-B, Class II)
–
1000-V Charged-Device Model (C101)
RGY PACKAGE
(TOP VIEW)
RSV PACKAGE
(TOP VIEW)
D, DBQ, DGV, OR PW PACKAGE
(TOP VIEW)
Logic
Control
1
2
3
4
5
6
IN
16
15
14
13
12
11
V
+
1
16
16 15 14 13
NC1
NO1
EN
15
14
13
12
11
10
NC1
NO1
COM1
NC2
NO2
COM2
2
3
4
5
6
7
EN
NC4
NO4
COM4
NC3
1
12
11
10
9
NC4
NO1
COM1
NC2
NC4
NO4
COM4
NC3
NO3
COM1
NC2
2
3
4
NO4
COM4
NC3
NO2
COM2
GND
NO2
10
9
7
8
NO3
8
9
5
6
7
8
COM3
DESCRIPTION/ORDERING INFORMATION
The TS3A5018 is a quad single-pole double-throw (SPDT) analog switch that is designed to operate from 2.3 V
to 3.6 V. This device can handle both digital and analog signals, and signals up to V+ can be transmitted in either
direction.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2005–2010, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TS3A5018
SCDS189D –JANUARY 2005–REVISED MARCH 2010
www.ti.com
ORDERING INFORMATION(1)
TA
PACKAGE(2)
ORDERABLE PART NUMBER
TOP-SIDE MARKING
TS3A5018
Tube of 40
TS3A5018D
SOIC – D
Reel of 2500
Reel of 2500
Tube of 90
TS3A5018DR
SSOP (QSOP) – DBQ
TSSOP – PW
TVSOP – DGV
QFN – RGY
TS3A5018DBQR
TS3A5018PW
YA018
YA018
YA018
YA018
ZUN
–40°C to 85°C
Reel of 2000
Reel of 2000
TS3A5018PWR
TS3A5018DGVR
TS3A5018RGYR
TS3A5018RGYRG4
TS3A5018RSVR
Reel of 3000
Reel of 3000
uQFN – RSV
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
SUMMARY OF CHARACTERISTICS(1)
Quad Single-Pole,
Configuration
Double Throw
(4 × SPDT)
Number of channels
4
7 Ω
ON-state resistance (ron
)
ON-state resistance match (Δron
)
0.3 Ω
ON-state resistance flatness (ron(flat)
)
5 Ω
Turn-on/turn-off time (tON/tOFF
Charge injection (QC)
Bandwidth (BW)
)
3.5 ns/2 ns
2 pC
300 MHz
–48 dB at 10 MHz
–48 dB at 10 MHz
0.2%
OFF isolation (OISO
Crosstalk (XTALK
)
)
Total harmonic distortion (THD)
Leakage current (ICOM(OFF)
Power-supply current (I+)
±5 mA
2.5 mA
16-pin QFN, uQFN, SOIC,
SSOP, TSSOP, or TVSOP
Package options
(1) V+ = 3.3 V, TA = 25°C
FUNCTION TABLE
NO TO COM,
COM TO NO
NC TO COM,
COM TO NC
EN
IN
L
L
L
H
X
OFF
ON
OFF
OFF
ON
H
OFF
2
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Product Folder Link(s): TS3A5018
TS3A5018
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SCDS189D –JANUARY 2005–REVISED MARCH 2010
Absolute Minimum and Maximum Ratings(1) (2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
V+
Supply voltage range(3)
Analog voltage range(3) (4)
Analog port diode current
On-state switch current
–0.5
4.6
V
VNC
VNO
VCOM
IK
–0.5
–50
–64
4.6
V
VNC, VNO, VCOM < 0
mA
mA
INC
INO
ICOM
VI
VNC, VNO, VCOM = 0 to 7 V
64
Digital input voltage range(3) (4)
Digital input clamp current
–0.5
–50
4.6
V
IIK
VI < 0
mA
mA
mA
I+
Continuous current through V+
Continuous current through GND
–100
–100
100
100
73
IGND
D package
DBQ package
DGV package
PW package
RGY package
RSV package
90
120
108
51
qJA
Package thermal impedance(5)
°C/W
°C
184
150
Tstg
Storage temperature range
–65
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) The package thermal impedance is calculated in accordance with JESD 51-7.
Copyright © 2005–2010, Texas Instruments Incorporated
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SCDS189D –JANUARY 2005–REVISED MARCH 2010
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MAX UNIT
Electrical Characteristics for 3.3-V Supply(1)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
Analog signal
range
VCOM, VNO
VNC
,
0
V+
V
25°C
Full
7
10
12
ON-state
resistance
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –32 mA,
Switch ON,
See Figure 13
ron
3 V
3 V
Ω
ON-state
25°C
0.3
0.8
resistance
match between
channels
VNC or VNO = 2.1 V,
ICOM = –32 mA,
Switch ON,
See Figure 13
Δron
Ω
Ω
Full
1
ON-state
resistance
flatness
25°C
Full
5
7
8
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –32 mA,
Switch ON,
See Figure 13
ron(flat)
3 V
VNC or VNO = 1 V,
VCOM = 3 V,
or
VNC or VNO = 3 V,
VCOM = 1 V,
25°C
–0.1
–0.2
–2
0.05
0.1
Switch OFF,
See Figure 14
3.6 V
Full
25°C
Full
0.2
2
NC, NO
OFF leakage
current
INC(OFF)
INO(OFF)
,
mA
VNC or VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
or
VNC or VNO = 3.6 V to 0,
VCOM = 0 to 3.6 V,
0.05
0.05
0.05
0.05
0.05
Switch OFF,
See Figure 14
0 V
3.6 V
0 V
–10
–0.1
–0.2
–2
10
0.1
0.2
2
VCOM = 1 V,
VNC or VNO = 3 V,
or
VCOM = 3 V,
VNC or VNO = 3 V,
25°C
Full
Switch OFF,
See Figure 14
COM
OFF leakage
current
ICOM(OFF)
mA
VCOM = 0 to 3.6 V,
VNC or VNO = 3.6 V to 0,
or
VCOM = 3.6 V to 0,
VNC or VNO = 0 to 3.6 V,
25°C
Full
Switch OFF,
See Figure 14
–10
–0.1
–0.2
–0.1
–0.2
10
0.1
0.2
0.1
0.2
VNC or VNO = 1 V,
VCOM = Open,
or
VNC or VNO = 3 V,
VCOM = Open,
25°C
Full
NC, NO
ON leakage
current
INC(ON)
INO(ON)
,
Switch ON,
See Figure 15
3.6 V
3.6 V
mA
mA
VCOM = 1 V,
VNC or VNO = Open,
or
VCOM = 3 V,
VNC or VNO = Open,
25°C
Full
COM
ON leakage
current
Switch ON,
See Figure 15
ICOM(ON)
Digital Control Inputs (IN, EN)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
2
0
V+
0.8
1
V
V
25°C
Full
–1
–1
0.05
Input leakage
current
IIH, IIL
VI = V+ or 0
3.6 V
mA
1
(1) The algebraic convention is used in this data sheet; the most negative value is shown in the minimum column.
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
4
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Product Folder Link(s): TS3A5018
TS3A5018
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SCDS189D –JANUARY 2005–REVISED MARCH 2010
Electrical Characteristics for 3.3-V Supply (1) (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
25°C
Full
3.3 V
2.5
2.5
0.5
0.5
3.5
8
VCOM = 2 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
Turn-on time
Turn-off time
tON
ns
9
3 V to
3.6 V
25°C
Full
3.3 V
2
6.5
VCOM = 2 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
tOFF
ns
7
3 V to
3.6 V
Charge
injection
VGEN = 0,
RGEN = 0,
CL = 0.1 nF,
See Figure 22
QC
CNC(OFF)
25°C
25°C
3.3 V
2
pC
pF
NC, NO
OFF
capacitance
,
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 16
See Figure 16
See Figure 16
See Figure 16
3.3 V
4.5
CNO(OFF)
COM
OFF
capacitance
VCOM = V+ or GND,
Switch OFF,
CCOM(OFF)
25°C
25°C
25°C
3.3 V
3.3 V
3.3 V
9
16
16
pF
pF
pF
NC, NO
ON
capacitance
CNC(ON)
,
VNC or VNO = V+ or GND,
Switch ON,
CNO(ON)
COM
ON
capacitance
VCOM = V+ or GND,
Switch ON,
CCOM(ON)
Digital input
capacitance
CI
BW
VI = V+ or GND,
See Figure 16
See Figure 18
25°C
25°C
25°C
25°C
25°C
25°C
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3
300
–48
–48
–81
0.21
pF
MHz
dB
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 19
OISO
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 20
XTALK
XTALK(ADJ)
THD
dB
Crosstalk
adjacent
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 21
dB
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
%
Supply
25°C
Full
2.5
7
mA
10
Positive supply
current
I+
VI = V+ or GND,
Switch ON or OFF
3.6 V
Copyright © 2005–2010, Texas Instruments Incorporated
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MAX UNIT
Electrical Characteristics for 2.5-V Supply(1)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
Analog signal
range
VCOM, VNC
,
0
V+
V
VNO
25°C
Full
12
20
22
1
ON-state
resistance
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –24 mA,
Switch ON,
See Figure 13
ron
2.3 V
2.3 V
Ω
ON-state
25°C
0.3
resistance
match between
channels
VNC or VNO = 1.6 V,
ICOM = –24 mA,
Switch ON,
See Figure 13
Δron
Ω
Ω
Full
2
ON-state
resistance
flatness
25°C
Full
14
18
20
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –24 mA,
Switch ON,
See Figure 13
ron(flat)
2.3 V
2.7 V
VNC or VNO = 0.5 V,
VCOM = 2.2 V,
or
VNC or VNO = 2.2 V,
VCOM = 0.5 V,
25°C
–0.1
–0.2
–2
0.05
0.1
Switch OFF,
See Figure 14
Full
25°C
Full
0.2
2
NC, NO
OFF leakage
current
INC(OFF)
INO(OFF)
,
mA
VNC or VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
or
VNC or VNO = 3.6 V to 0,
VCOM = 0 to 3.6 V,
0.05
0.05
0.05
0.05
0.05
Switch OFF,
See Figure 14
0 V
2.7 V
0 V
–10
–0.1
–0.2
–2
10
0.1
0.2
2
VCOM = 0.5 V,
VNC or VNO = 2.2 V,
or
VCOM = 2.2 V,
VNC or VNO = 0.5 V,
25°C
Full
Switch OFF,
See Figure 14
COM
OFF leakage
current
ICOM(OFF)
mA
VCOM = 0 to 3.6 V,
VNC or VNO = 3.6 V to 0,
or
VCOM = 3.6 V to 0,
VNC or VNO = 0 to 3.6 V,
25°C
Full
Switch OFF,
See Figure 14
–10
–0.1
–0.2
–0.1
–0.2
10
0.1
0.2
0.1
0.2
VNC or VNO = 0.5 V,
VCOM = Open,
or
VNC or VNO = 2.2 V,
VCOM = Open,
25°C
Full
NC, NO
ON leakage
current
INC(ON)
INO(ON)
,
Switch ON,
See Figure 15
2.7 V
2.7 V
mA
mA
VCOM = 0.5 V,
VNC or VNO = Open,
or
VCOM = 2.2 V,
VNC or VNO = Open,
25°C
Full
COM
ON leakage
current
Switch ON,
See Figure 15
ICOM(ON)
Digital Control Inputs (IN, EN)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
1.7
0
V+
0.7
0.1
1
V
V
25°C
Full
–0.1
–1
0.05
Input leakage
current
IIH, IIL
VI = V+ or 0
2.7 V
mA
(1) The algebraic convention is used in this data sheet; the most negative value is shown in the minimum column.
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
6
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Product Folder Link(s): TS3A5018
TS3A5018
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SCDS189D –JANUARY 2005–REVISED MARCH 2010
Electrical Characteristics for 2.5-V Supply (1) (continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
25°C
Full
2.5 V
2.5
2.5
0.5
0.5
5
9.5
VCOM = 1.5 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
Turn-on time
Turn-off time
tON
ns
2.3 V to
2.7 V
10.5
25°C
Full
2.5 V
3
7.5
VCOM = 1.5 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 17
tOFF
ns
9
2.3 V to
2.7 V
Charge
injection
VGEN = 0,
RGEN = 0,
CL = 0.1 nF,
See Figure 22
QC
CNC(OFF)
25°C
25°C
2.5 V
1
3
pC
pF
NC, NO
OFF
capacitance
,
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 16
See Figure 16
See Figure 16
See Figure 16
2.5 V
CNO(OFF)
COM
OFF
capacitance
VCOM = V+ or GND,
Switch OFF,
CCOM(OFF)
25°C
25°C
25°C
2.5 V
2.5 V
2.5 V
9
16
16
pF
pF
pF
NC, NO
ON
capacitance
CNC(ON)
,
VNC or VNO = V+ or GND,
Switch ON,
CNO(ON)
COM
ON
capacitance
VCOM = V+ or GND,
Switch ON,
CCOM(ON)
Digital input
capacitance
CI
BW
VI = V+ or GND,
See Figure 16
See Figure 18
25°C
25°C
25°C
25°C
25°C
25°C
2.5 V
2.5 V
2.5 V
2.5 V
3.3 V
2.5 V
3
300
–48
–48
–81
0.33
pF
MHz
dB
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 19
OISO
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 20
XTALK
XTALK(ADJ)
THD
dB
Crosstalk
adjacent
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 21
dB
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
%
Supply
25°C
Full
2.5
7
mA
10
Positive supply
current
I+
VI = V+ or GND,
Switch ON or OFF
2.7 V
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TYPICAL PERFORMANCE
18
10
T
A
= 25°C
16
14
12
10
8
8
6
4
2
0
V
= 2.5 V
+
855C
255C
6
V
+
= 3.3 V
4
–405C
2
0
0.0
0.5
1.0
1.5
V
2.0
(V)
2.5
3.0
3.5
0.0
0.5
1.0
1.5
2.0
(V)
2.5
3.0
3.5
COM
V
COM
Figure 1. ron vs VCOM
Figure 2. ron vs VCOM (V+ = 2.5 V)
18
40
30
20
10
0
16
14
12
10
8
I
NC(ON)
I
COM(ON)
855C
255C
I
NC(OFF)
I
COM(OFF)
I
6
NO(ON)
4
I
NO(OFF)
2
–405C
0
−60 −40 −20
0
20
(°C)
40
60
80
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T
A
V
(V)
COM
Figure 3. ron vs VCOM (V+ = 2.5 V)
Figure 4. Leakage Current vs Temperature (V+ = 3.6 V)
7
5
4
3
2
1
0
t
ON
6
5
4
3
2
1
0
V = 3.3 V
+
t
OFF
V = 2.5 V
+
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
V
COM
(V)
V
+
(V)
Figure 5. Charge Injection (QC) vs VCOM
Figure 6. tON and tOFF vs Supply Voltage
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TYPICAL PERFORMANCE (continued)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
8
7
6
5
4
3
2
1
0
T
A
= 25_C
t
ON
V
IH
t
OFF
V
IL
2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0
−40
25
85
V
+
(V)
T
A
(5C)
Figure 7. tON and tOFF vs Temperature (V+ = 3.3 V)
Figure 8. Logic-Level Threshold vs V+
0
−1
−2
−3
−4
−5
−6
−7
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
1
10
100
1K
1
10
100
1k
Frequency (MHz)
Frequency (MHz)
Figure 9. Gain vs Frequency Bandwidth (V+ = 3.3 V)
Figure 10. OFF Isolation and Crosstalk vs Frequency
(V+ = 3.3 V)
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
−40
25
85
10
100
1000
Frequency (MHz)
10 K
100 K
T
A
(5C)
Figure 11. Total Harmonic Distortion vs Frequency
Figure 12. Power-Supply Current vs Temperature
(V+ = 3.3 V)
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PIN DESCRIPTION
PIN
NAME
NO.
DESCRIPTION
1
2
IN
Digital control pin to select between NC and NO
Normally closed
Normally open
NC1
NO1
COM1
NC2
NO2
COM2
GND
COM3
NO3
NC3
COM4
NO4
NC4
EN
3
4
Common
5
Normally closed
Normally open
6
7
Common
8
Digital ground
9
Common
10
11
12
13
14
15
16
Normally open
Normally closed
Common
Normally open
Normally closed
Chip enable (active low)
Power supply
V+
10
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SCDS189D –JANUARY 2005–REVISED MARCH 2010
PARAMETER DESCRIPTION
SYMBOL
VCOM
VNC
DESCRIPTION
Voltage at COM
Voltage at NC
Voltage at NO
VNO
ron
Resistance between COM and NC or NO ports when the channel is ON
Difference of ron between channels in a specific device
Δron
ron(flat)
INC(OFF)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open
INC(ON)
INO(OFF)
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(OFF)
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NC or NO) in the OFF state
Leakage current measured at the COM port, with the corresponding channel (COM to NC or NO) in the ON state and the
output (NC or NO) open
VIH
VIL
Minimum input voltage for logic high for the control input (IN, EN)
Maximum input voltage for logic low for the control input (IN, EN)
Voltage at the control input (IN, EN)
VI
IIH, IIL
Leakage current measured at the control input (IN, EN)
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output NC or NO) signal when the switch is turning ON.
tON
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (NC or NO) signal when the switch is turning OFF.
tOFF
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC or NO)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
QC
CNC(OFF)
CNC(ON)
CNO(OFF)
CNO(ON)
CCOM(OFF)
CCOM(ON)
CI
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
Capacitance at the NC port when the corresponding channel (NO to COM) is OFF
Capacitance at the NC port when the corresponding channel (NO to COM) is ON
Capacitance at the COM port when the corresponding channel (COM to NC) is OFF
Capacitance at the COM port when the corresponding channel (COM to NC) is ON
Capacitance of control input (IN, EN)
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NC to COM) in the OFF state.
OISO
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC1 to NO1). Adjacent
crosstalk is a measure of unwanted signal coupling from an ON channel to an adjacent ON channel (NC1 to NC2) .This is
measured in a specific frequency and in dB.
XTALK
BW
THD
I+
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root
mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental
harmonic.
Static power-supply current with the control (IN) pin at V+ or GND
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PARAMETER MEASUREMENT INFORMATION
V
+
V
NC
NC
COM
V
COM
+
Channel ON
COM * VNO or VNC
W
V
NO
NO
V
r
+
on
ICOM
IN or EN
I
COM
V
I
V = V or V
IL
I
IH
+
GND
Figure 13. ON-State Resistance (ron)
V
+
V
NC
NC
OFF-State Leakage Current
Channel OFF
COM
V
COM
+
+
V
NO
NO
V = V or V
I
IH
IL
V
NC
or V = 0 to V
+
and
NO
IN or EN
V
I
V
COM
=V to 0
+
+
GND
Figure 14. OFF-State Leakage Current (ICOM(OFF), INC(OFF), INO(OFF)
)
V
+
V
NC
NC
COM
V
COM
+
V
NO
NO
ON-State Leakage Current
Channel ON
IN or EN
V = V or V
IL
I
IH
V
I
+
GND
Figure 15. ON-State Leakage Current (ICOM(ON), INC(ON)
)
12
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SCDS189D –JANUARY 2005–REVISED MARCH 2010
PARAMETER MEASUREMENT INFORMATION (continued)
V
+
V
V
NC
NC
Capacitance
Meter
V
= V or GND
+
BIAS
NO
NO
V = V or V
I IL
IH
V
COM
COM
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
V
BIAS
V
I
IN or EN
GND
Figure 16. Capacitance (CI, CCOM(OFF), CCOM(ON), CNC(OFF), CNC(ON)
)
V
+
TEST
R
L
C
L
NC or NO
NC or NO
V
V
NC or NO
t
300 Ω
300 Ω
35 pF
35 pF
ON
COM
(3)
V
COM
(2)
C
L
R
L
(2)
C
t
L
OFF
R
L
V
I
V
0
Logic
Input
(V )
I
+
50%
50%
IN or EN
Logic
GND
(1)
Input
t
ON
t
OFF
Switch
Output
90%
90%
(V )
NC
A. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B. CL includes probe and jig capacitance.
C. See Electrical Characteristics for VCOM
.
Figure 17. Turn-On (tON) and Turn-Off Time (tOFF
)
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PARAMETER MEASUREMENT INFORMATION (continued)
V
+
Network Analyzer
50 W
V
NC
NC
Channel ON: NC to COM
V = V or GND
V
COM
COM
I
+
Source
Signal
V
NO
NO
Network Analyzer Setup
IN or EN
V
I
Source Power = 0 dBm
50 W
(632-mV P-P at 50-W load)
+
GND
DC Bias = 350 mV
Figure 18. Bandwidth (BW)
V
+
Network Analyzer
Channel OFF: NC to COM
50 W
V
NC
NC
V = V or GND
I
+
V
COM
COM
Source
Signal
50 W
V
NO
NO
Network Analyzer Setup
IN or EN
Source Power = 0 dBm
V
I
(632-mV P-P at 50-W load)
50 W
+
GND
DC Bias = 350 mV
Figure 19. OFF Isolation (OISO
)
V
+
Network Analyzer
Channel ON: NC to COM
Channel OFF: NO to COM
V = V or GND
50 W
V
V
NC
NC
V
COM
I
+
Source
Signal
NO
NO
Network Analyzer Setup
IN or EN
50 W
V
I
50 W
Source Power = 0 dBm
(632-mV P-P at 50-W load)
+
GND
DC Bias = 350 mV
Figure 20. Crosstalk (XTALK
)
14
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SCDS189D –JANUARY 2005–REVISED MARCH 2010
PARAMETER MEASUREMENT INFORMATION (continued)
V
+
Network Analyzer
V
NC1
50 W
NC1
Channel ON: NC to COM
Network Analyzer Setup
COM1
COM2
Source
Signal
V
NC2
NC2
50 W
IN or EN
Source Power = 0 dBm
(632 mV P-P at 50 W load)
V
I
50 W
+
DC Bias = 350 mV
GND
Figure 21. Crosstalk Adjacent
V
IH
V
+
Logic
Input
OFF
ON
OFF
V
(V
I)
IL
R
GEN
NC or NO
COM
V
COM
+
V
COM
∆V
COM
NC or NO
IN or EN
V
GEN
(1)
C
L
V
= 0 to V
= 0
GEN
+
V
I
R
GEN
C = 0.1 nF
L
Logic
Input
GND
Q = C × ∆V
C L COM
(2)
V = V or V
IL
I
IH
A. CL includes probe and jig capacitance.
B. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
Figure 22. Charge Injection (QC)
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PARAMETER MEASUREMENT INFORMATION (continued)
V = V or V
Channel ON: COM to NC
I
IH
IL
V
= V P-P
f
= 20 Hz to 20 kHz
SOURCE
+
SOURCE
V /2
+
V
+
Audio Analyzer
R
L
10 mF
NC
NO
10 mF
Source
Signal
COM
(1)
C
L
600 W
IN or EN
600 W
V
I
+
GND
600 W
A. CL includes probe and jig capacitance.
Figure 23. Total Harmonic Distortion (THD)
16
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Jun-2010
PACKAGING INFORMATION
Status (1)
Eco Plan (2)
MSL Peak Temp (3)
Samples
Orderable Device
Package Type Package
Drawing
Pins
Package Qty
Lead/
Ball Finish
(Requires Login)
TS3A5018D
TS3A5018DBQR
TS3A5018DBQRE4
TS3A5018DBQRG4
TS3A5018DE4
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
SOIC
SSOP/QSOP
SSOP/QSOP
SSOP/QSOP
SOIC
D
DBQ
DBQ
DBQ
D
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
40
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
Contact TI Distributor
or Sales Office
2500
2500
2500
40
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
Request Free Samples
Request Free Samples
Request Free Samples
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
Contact TI Distributor
or Sales Office
TS3A5018DG4
SOIC
D
40
Green (RoHS
& no Sb/Br)
Contact TI Distributor
or Sales Office
TS3A5018DGVR
TS3A5018DGVRE4
TS3A5018DGVRG4
TS3A5018DR
TVSOP
TVSOP
TVSOP
SOIC
DGV
DGV
DGV
D
2000
2000
2000
2500
2500
2500
90
Green (RoHS
& no Sb/Br)
Request Free Samples
Request Free Samples
Request Free Samples
Request Free Samples
Request Free Samples
Request Free Samples
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
TS3A5018DRE4
TS3A5018DRG4
TS3A5018PW
SOIC
D
Green (RoHS
& no Sb/Br)
SOIC
D
Green (RoHS
& no Sb/Br)
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
PW
PW
PW
PW
PW
Green (RoHS
& no Sb/Br)
Contact TI Distributor
or Sales Office
TS3A5018PWE4
TS3A5018PWG4
TS3A5018PWR
TS3A5018PWRE4
90
Green (RoHS
& no Sb/Br)
Contact TI Distributor
or Sales Office
90
Green (RoHS
& no Sb/Br)
Contact TI Distributor
or Sales Office
2000
2000
Green (RoHS
& no Sb/Br)
Request Free Samples
Green (RoHS
& no Sb/Br)
Request Free Samples
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Jun-2010
Status (1)
ACTIVE
ACTIVE
ACTIVE
ACTIVE
Eco Plan (2)
MSL Peak Temp (3)
Samples
Orderable Device
Package Type Package
Drawing
Pins
Package Qty
Lead/
Ball Finish
(Requires Login)
TS3A5018PWRG4
TS3A5018RGYR
TS3A5018RGYRG4
TS3A5018RSVR
TSSOP
VQFN
VQFN
UQFN
PW
RGY
RGY
RSV
16
16
16
16
2000
3000
3000
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
Request Free Samples
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-1-260C-UNLIM
Request Free Samples
Request Free Samples
Request Free Samples
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
30-Jul-2010
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TS3A5018DGVR
TS3A5018DR
TVSOP
SOIC
DGV
D
16
16
16
16
2000
2500
2000
3000
330.0
330.0
330.0
330.0
12.4
16.4
12.4
12.4
6.8
6.5
6.9
3.8
4.0
10.3
5.6
1.6
2.1
1.6
1.5
8.0
8.0
8.0
8.0
12.0
16.0
12.0
12.0
Q1
Q1
Q1
Q1
TS3A5018PWR
TS3A5018RGYR
TSSOP
VQFN
PW
RGY
4.3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
30-Jul-2010
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TS3A5018DGVR
TS3A5018DR
TVSOP
SOIC
DGV
D
16
16
16
16
2000
2500
2000
3000
346.0
333.2
346.0
355.0
346.0
345.9
346.0
350.0
29.0
28.6
29.0
50.0
TS3A5018PWR
TS3A5018RGYR
TSSOP
VQFN
PW
RGY
Pack Materials-Page 2
MECHANICAL DATA
MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999
PW (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0,30
0,19
M
0,10
0,65
14
8
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
0,25
1
7
0°–8°
A
0,75
0,50
Seating Plane
0,10
0,15
0,05
1,20 MAX
PINS **
8
14
16
20
24
28
DIM
3,10
2,90
5,10
4,90
5,10
4,90
6,60
6,40
7,90
9,80
9,60
A MAX
A MIN
7,70
4040064/F 01/97
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion not to exceed 0,15.
D. Falls within JEDEC MO-153
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