TS5A23159_14 [TI]
1-Ω DUAL SPDT ANALOG SWITCH 5-V/3.3-V 2-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER;
| 型号： | TS5A23159_14 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 1-Ω DUAL SPDT ANALOG SWITCH 5-V/3.3-V 2-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER 光电二极管 |
| 文件： | 总27页 (文件大小：702K) |
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TS5A23159
www.ti.com ........................................................................................................................................................ SCDS201E–AUGUST 2005–REVISED JULY 2009
1-Ω DUAL SPDT ANALOG SWITCH
5-V/3.3-V 2-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER
1
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
•
•
Cell Phones
PDAs
•
•
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Isolation in Power-Down Mode, V+ = 0
Specified Break-Before-Make Switching
Low ON-State Resistance (1 Ω)
Portable Instrumentation
Audio and Video Signal Routing
Low-Voltage Data-Acquisition Systems
Communication Circuits
Modems
Hard Drives
Computer Peripherals
Wireless Terminals and Peripherals
Control Inputs Are 5.5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
•
ESD Performance Tested Per JESD 22
–
2000-V Human-Body Model
(A114-B, Class II)
–
1000-V Charged-Device Model (C101)
DGS PACKAGE
(TOP VIEW)
RSE PACKAGE
(TOP VIEW)
COM1
1
2
3
4
5
10
9
IN1
COM1
NC1
V+
10
IN1
NO1
GND
NO2
NC1
1
9
8
7
NO1
GND
NO2
IN2
V+
2
3
8
NC2
COM2
7
NC2
COM2
6
4
5
6
IN2
DESCRIPTION/ORDERING INFORMATION
The TS5A23159 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V
to 5.5 V. The device offers low ON-state resistance and excellent ON-state resistance matching with the
break-before-make feature, to prevent signal distortion during the transferring of a signal from one channel to
another. The device has an excellent total harmonic distortion (THD) performance and consumes very low
power. These features make this device suitable for portable audio applications.
ORDERING INFORMATION(1)
TA
PACKAGE(2)
ORDERABLE PART NUMBER
TS5A23159DGSR
TOP-SIDE MARKING
JER or JEO
JEO
VSSOP – DGS (MSOP)
QFN – RSE
Tape and reel
Tape and reel
–40°C to 85°C
TS5A23159RSER
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2005–2009, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TS5A23159
SCDS201E–AUGUST 2005–REVISED JULY 2009........................................................................................................................................................ www.ti.com
SUMMARY OF CHARACTERISTICS(1)
Dual 2:1
Configuration
Multiplexer/Demultiplexer
(2 × SPDT)
Number of channels
2
1.1 Ω
ON-state resistance (ron
)
ON-state resistance match (Δron
ON-state resistance flatness (ron(flat)
Turn-on/turn-off time (tON/tOFF
)
0.1 Ω
)
0.15 Ω
)
20 ns/15 ns
12 ns
Break-before-make time (tBBM
Charge injection (QC)
Bandwidth (BW)
)
–7 pC
100 MHz
OFF isolation (OISO
Crosstalk (XTALK
)
–65 dB at 1 MHz
–66 dB at 1 MHz
0.01%
)
Total harmonic distortion (THD)
Leakage current (INO(OFF)/INC(OFF)
Power-supply current (I+)
Package options
)
±20 nA
50 nA
10-pin VSSOP and QFN
(1) V+ = 5 V, TA = 25°C
FUNCTION TABLE
NC TO COM,
COM TO NC
NO TO COM,
COM TO NO
IN
L
ON
OFF
ON
H
OFF
2
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Product Folder Link(s): TS5A23159
TS5A23159
www.ti.com ........................................................................................................................................................ SCDS201E–AUGUST 2005–REVISED JULY 2009
Absolute Minimum and Maximum Ratings(1)(2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
V+
Supply voltage range(3)
–0.5
6.5
V
VNC
VNO
Analog voltage range(3)(4)(5)
–0.5
V+ + 0.5
V
VCOM
IK
Analog port diode current
On-state switch current
VNC, VNO, VCOM < 0
–50
mA
mA
INC
INO
ICOM
–200
200
400
6.5
VNC, VNO, VCOM = 0 to V+
On-state peak switch current(6)
–400
VI
Digital input voltage range(3)(4)
Digital input clamp current
–0.5
–50
V
IIK
VI < 0
mA
mA
mA
I+
Continuous current through V+
Continuous current through GND
100
100
165
TBD
150
IGND
–100
DGS package
RSE package
θJA
Package thermal impedance(7)
Storage temperature range
°C/W
°C
Tstg
–65
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 5.5 V maximum.
(6) Pulse at 1-ms duration < 10% duty cycle
(7) The package thermal impedance is calculated in accordance with JESD 51-7.
Copyright © 2005–2009, Texas Instruments Incorporated
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TS5A23159
SCDS201E–AUGUST 2005–REVISED JULY 2009........................................................................................................................................................ www.ti.com
Electrical Characteristics for 5-V Supply(1)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
Analog signal
range
VCOM, VNO
VNC
,
0
V+
V
25°C
Full
0.8
0.7
1.1
1.5
0.9
1.1
0.1
Peak ON
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 14
rpeak
4.5 V
4.5 V
Ω
25°C
Full
ON-state
resistance
VNO or VNC = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
ron
Ω
Ω
ON-state
resistance
match
between
channels
25°C
0.05
VNO or VNC = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
Δron
4.5 V
4.5 V
Full
0.1
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 14
25°C
0.15
0.1
ON-state
resistance
flatness
ron(flat)
Ω
VNO or VNC = 1 V, 1.5 V,
2.5 V,
ICOM = –100 mA,
25°C
Full
0.25
0.25
20
Switch ON,
See Figure 14
VNC or VNO = 1 V,
VCOM = 1 V to 4.5 V,
or
VNC or VNO = 4.5 V,
VCOM = 1 V to 4.5 V,
25°C
–20
2
INO(OFF)
INC(OFF)
,
Switch OFF,
See Figure 15
5.5 V
0 V
nA
µA
nA
NC, NO
OFF leakage
current
Full
–100
100
25°C
Full
–1
–20
–20
0.2
2
1
20
20
INC(PWROFF)
,
VNC or VNO = 0 to 5.5 V,
INO(PWROFF) VCOM = 5.5 V to 0,
Switch OFF,
See Figure 15
VNC or VNO = 1 V,
VCOM = Open,
or
VNC or VNO = 4.5 V,
VCOM = Open,
25°C
NC, NO
ON leakage
current
INO(ON)
INC(ON)
,
Switch ON,
See Figure 16
5.5 V
Full
–100
100
COM
OFF leakage
current
25°C
Full
–1
–20
–20
0.1
2
1
20
20
VNC or VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0,
Switch OFF,
See Figure 15
ICOM(PWROFF)
0 V
µA
VNC or VNO = Open,
VCOM = 1 V,
or
VNC or VNO = Open,
VCOM = 4.5 V,
25°C
COM
ON leakage
current
Switch ON,
See Figure 16
ICOM(ON)
5.5 V
nA
Full
–100
100
Digital Control Inputs (IN1, IN2)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
2.4
0
5.5
0.8
2
V
V
25°C
Full
–2
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
5.5 V
nA
–100
100
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
4
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Product Folder Link(s): TS5A23159
TS5A23159
www.ti.com ........................................................................................................................................................ SCDS201E–AUGUST 2005–REVISED JULY 2009
Electrical Characteristics for 5-V Supply (continued)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
25°C
Full
5 V
1
1
1
1
1
1
8
13
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
4.5 V
to
5.5 V
Turn-on time
Turn-off time
tON
ns
16.5
25°C
Full
5 V
5
8
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
4.5 V
to
5.5 V
tOFF
ns
8
25°C
Full
5 V
5.5
13
Break-before-
make time
VNC = VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
4.5 V
to
tBBM
ns
14
5.5 V
Charge
injection
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
QC
25°C
25°C
5 V
–7
18
pC
pF
NC, NO
OFF
capacitance
CNC(OFF)
CNO(OFF)
,
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 17
See Figure 17
See Figure 17
5 V
NC, NO
ON
capacitance
CNC(ON)
CNO(ON)
,
VNC or VNO = V+ or GND,
Switch ON,
25°C
25°C
5 V
5 V
55
pF
pF
COM
ON
capacitance
VCOM = V+ or GND,
Switch ON,
CCOM(ON)
54.5
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 17
See Figure 20
25°C
25°C
25°C
25°C
5 V
5 V
5 V
5 V
2
100
–64
–64
pF
MHz
dB
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
BW
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
OISO
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
dB
Total
harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 24
THD
25°C
5 V
0.004
10
%
Supply
Positive
supply
current
25°C
Full
50
I+
VI = V+ or GND,
Switch ON or OFF
5.5 V
nA
750
Copyright © 2005–2009, Texas Instruments Incorporated
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Product Folder Link(s): TS5A23159
TS5A23159
SCDS201E–AUGUST 2005–REVISED JULY 2009........................................................................................................................................................ www.ti.com
Electrical Characteristics for 3.3-V Supply(1)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP MAX UNIT
Analog signal
range
VCOM, VNO
VNC
,
0
V+
V
25°C
Full
1.3
1.2
1.6
2
Peak ON
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 14
rpeak
3 V
3 V
Ω
25°C
Full
1.5
1.7
ON-state
resistance
VNO or VNC = 2 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
ron
Ω
Ω
ON-state
resistance
match
between
channels
25°C
0.1 0.15
VNO or VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
Δron
3 V
3 V
Full
0.2
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 14
25°C
0.15
ON-state
resistance
flatness
ron(flat)
Ω
25°C
Full
VNO or VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 14
VNC or VNO = 1 V,
VCOM = 1 V to 3 V,
or
VNC or VNO = 3 V,
VCOM = 1 V to 3 V,
25°C
–20
–50
2
20
50
INO(OFF)
INC(OFF)
,
Switch OFF,
See Figure 15
3.6 V
0 V
nA
µA
nA
NC, NO
OFF leakage
current
Full
25°C
Full
–1
–15
–10
0.2
2
1
15
10
INC(PWROFF)
INO(PWROFF)
,
VNC or VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
Switch OFF,
See Figure 15
VNC or VNO = 1 V,
VCOM = Open,
or
VNC or VNO = 3 V,
VCOM = Open,
25°C
NC, NO
ON leakage
current
INO(ON)
,
Switch ON,
See Figure 16
3.6 V
INC(ON)
Full
–20
20
COM
OFF leakage
current
25°C
Full
–1
–15
–10
0.2
2
1
15
10
VNC or VNO = 3.6 V to 0,
VCOM = 0 to 3.6 V,
Switch OFF,
See Figure 15
ICOM(PWROFF)
0 V
µA
VNC or VNO = Open,
VCOM = 1 V,
or
VNC or VNO = Open,
VCOM = 3 V,
25°C
COM
ON leakage
current
Switch ON,
See Figure 16
ICOM(ON)
3.6 V
nA
Full
–20
20
Digital Control Inputs (IN1, IN2)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
2
0
5.5
0.8
2
V
V
25°C
Full
–2
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
3.6 V
nA
–20
20
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
6
Submit Documentation Feedback
Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): TS5A23159
TS5A23159
www.ti.com ........................................................................................................................................................ SCDS201E–AUGUST 2005–REVISED JULY 2009
Electrical Characteristics for 3.3-V Supply (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP MAX UNIT
25°C
Full
3.3 V
5
3
1
1
1
1
11
5
19
22
9
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Turn-on time
Turn-off time
tON
ns
ns
ns
3 V to
3.6 V
25°C
Full
3.3 V
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
tOFF
3 V to
3.6 V
9
25°C
Full
3.3 V
7
17
20
Break-before-
make time
VNC = VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
tBBM
3 V to
3.6 V
Charge
injection
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
QC
25°C
25°C
3.3 V
–4
18
pC
pF
NC, NO
OFF
capacitance
CNC(OFF)
CNO(OFF)
,
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 17
See Figure 17
See Figure 17
3.3 V
NC, NO
ON
capacitance
CNC(ON)
CNO(ON)
,
VNC or VNO = V+ or GND,
Switch ON,
25°C
25°C
3.3 V
3.3 V
56
56
pF
pF
COM
ON
capacitance
VCOM = V+ or GND,
Switch ON,
CCOM(ON)
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 17
See Figure 20
25°C
25°C
25°C
25°C
25°C
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
2
100
–64
–64
0.01
pF
MHz
dB
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
BW
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
OISO
XTALK
THD
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
dB
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 24
%
Supply
25°C
Full
25
Positive supply
current
I+
VI = V+ or GND,
Switch ON or OFF
3.6 V
nA
150
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TS5A23159
SCDS201E–AUGUST 2005–REVISED JULY 2009........................................................................................................................................................ www.ti.com
Electrical Characteristics for 2.5-V Supply(1)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP MAX UNIT
Analog signal
range
VCOM, VNO
VNC
,
0
V+
V
25°C
Full
1.8
1.5
2.5
2.7
2
Peak ON
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 14
rpeak
2.3 V
2.3 V
Ω
25°C
Full
ON-state
resistance
VNO or VNC = 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 14
ron
Ω
Ω
2.4
0.2
ON-state
resistance
match
between
channels
25°C
0.15
VNO or VNC = 1.8 V, 0.8 V, Switch ON,
ICOM = –8 mA,
Δron
2.3 V
2.3 V
See Figure 14
Full
0.2
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 14
25°C
0.6
0.6
ON-state
resistance
flatness
ron(flat)
Ω
25°C
Full
1
1
VNO or VNC = 0.8 V, 1.8 V, Switch ON,
ICOM = –8 mA,
See Figure 14
VNC or VNO = 0.5 V,
VCOM = 0.5 V to 2.3 V,
or
VNC or VNO = 2.2 V,
VCOM = 0.5 V to 2.3 V,
25°C
–20
–50
2
20
INO(OFF)
INC(OFF)
,
Switch OFF,
See Figure 15
2.3 V
0 V
nA
µA
nA
NC, NO
OFF leakage
current
Full
50
25°C
Full
–1
–10
–10
0.1
2
1.0
10
10
INC(PWROFF)
INO(PWROFF)
,
VNC or VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,
Switch OFF,
See Figure 15
VNC or VNO = 0.5 V,
VCOM = Open,
or
VNC or VNO = 2.2 V,
VCOM = Open,
25°C
NC, NO
ON leakage
current
INO(ON)
,
Switch ON,
See Figure 16
2.7 V
INC(ON)
Full
–20
20
COM
OFF leakage
current
25°C
Full
–1
–10
–10
0.1
2
1
10
10
VNC or VNO = 2.7 V to 0,
VCOM = 0 to 2.7 V,
Switch OFF,
See Figure 15
ICOM(PWROFF)
0 V
µA
VNC or VNO = Open,
VCOM = 0.5 V,
or
VNC or VNO = Open,
VCOM = 2.2 V,
25°C
COM
ON leakage
current
Switch ON,
See Figure 16
ICOM(ON)
2.7 V
nA
Full
–20
20
Digital Control Inputs (IN1, IN2)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
1.8
0
5.5
0.6
2
V
V
25°C
Full
–2
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
2.7 V
nA
–20
20
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
8
Submit Documentation Feedback
Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): TS5A23159
TS5A23159
www.ti.com ........................................................................................................................................................ SCDS201E–AUGUST 2005–REVISED JULY 2009
Electrical Characteristics for 2.5-V Supply(1) (Continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP MAX UNIT
25°C
Full
2.5 V
5
5
2
2
1
1
15
6
28
32
9
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Turn-on time
Turn-off time
tON
ns
ns
ns
2.3 V to
2.7 V
25°C
Full
2.5 V
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
tOFF
2.3 V to
2.7 V
10
27
30
25°C
Full
2.5 V
10
Break-before-
make time
VNC = VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
tBBM
2.3 V to
2.7 V
Charge
injection
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
QC
25°C
25°C
2.5 V
–3
pC
pF
NC, NO
OFF
capacitance
CNC(OFF)
CNO(OFF)
,
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 17
See Figure 17
See Figure 17
2.5 V
18.5
NC, NO
ON
capacitance
CNC(ON)
CNO(ON)
,
VNC or VNO = V+ or GND,
Switch ON,
25°C
25°C
2.5 V
2.5 V
56.5
56.5
pF
pF
COM
ON
capacitance
VCOM = V+ or GND,
Switch ON,
CCOM(ON)
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 17
See Figure 20
25°C
25°C
25°C
25°C
25°C
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2
100
–64
–64
0.02
pF
MHz
dB
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
BW
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
OISO
XTALK
THD
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
dB
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 24
%
Supply
25°C
Full
10
25
Positive supply
current
I+
VI = V+ or GND,
Switch ON or OFF
2.7 V
nA
100
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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Electrical Characteristics for 1.8-V Supply(1)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP MAX UNIT
Analog signal
range
VCOM, VNO
VNC
,
0
V+
V
25°C
Full
5
2
Peak ON
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –2 mA,
Switch ON,
See Figure 14
rpeak
1.65 V
1.65 V
Ω
15
2.5
3.5
0.4
25°C
Full
ON-state
resistance
VNO or VNC = 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 14
ron
Ω
Ω
ON-state
resistance
match
between
channels
25°C
0.15
VNO or VNC = 0.6 V, 1.5 V, Switch ON,
ICOM = –2 mA,
Δron
1.65 V
1.65 V
See Figure 14
Full
0.4
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –2 mA,
Switch ON,
See Figure 14
25°C
5
ON-state
resistance
flatness
ron(flat)
Ω
25°C
Full
4.5
VNO or VNC = 0.6 V, 1.5 V, Switch ON,
ICOM = –2 mA,
See Figure 14
VNC or VNO = 0.3 V,
VCOM = 0.3 V to 1.65 V,
or
VNC or VNO = 1.65 V,
VCOM = 0.3 V to 1.65 V
25°C
–20
–50
2
20
50
INO(OFF)
INC(OFF)
,
Switch OFF,
See Figure 15
1.65 V
0 V
nA
µA
nA
µA
nA
NC, NO
OFF leakage
current
Full
VNC or VNO = 0 to
1.95 V,
VCOM = 1.95 V to 0,
25°C
Full
–1
–5
–5
0.1
2
1
5
5
INC(PWROFF)
INO(PWROFF)
,
Switch OFF,
See Figure 15
VNC or VNO = 0.3 V,
VCOM = Open,
or
VNC or VNO = 1.65 V,
VCOM = Open,
25°C
NC, NO
ON leakage
current
INO(ON)
,
Switch ON,
See Figure 16
1.95 V
0 V
INC(ON)
Full
–20
20
COM
OFF leakage
current
25°C
Full
–1
–5
0.1
2
1
5
VNC or VNO = 1.95 V to 0, Switch OFF,
VCOM = 0 to 1.95 V,
ICOM(PWROFF)
See Figure 15
VNC or VNO = Open,
VCOM = 0.3 V,
or
VNC or VNO = Open,
VCOM = 1.65 V,
25°C
–10
10
COM
ON leakage
current
Switch ON,
See Figure 16
ICOM(ON)
1.95 V
Full
–20
20
Digital Control Inputs (IN1, IN2)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
1.5
0
5.5
0.6
2
V
V
25°C
Full
–2
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
1.95 V
nA
–20
20
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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Electrical Characteristics for 1.8-V Supply(1) (Continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP MAX UNIT
25°C
Full
1.8 V
10 27.5 48.5
ns
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
Turn-on time
Turn-off time
tON
1.65 V to
1.95 V
10
55
11
12
50
55
25°C
Full
1.8 V
2
6.5
18
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
tOFF
ns
ns
1.65 V to
1.95 V
2
25°C
Full
1.8 V
1
Break-before-
make time
VNC = VNO = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
tBBM
1.65 V to
1.95 V
1
Charge
injection
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
QC
25°C
25°C
1.8 V
2
pC
pF
NC, NO
OFF
capacitance
CNC(OFF)
CNO(OFF)
,
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 17
See Figure 17
See Figure 17
1.8 V
18.5
NC, NO
ON
capacitance
CNC(ON)
CNO(ON)
,
VNC or VNO = V+ or GND,
Switch ON,
25°C
25°C
1.8 V
1.8 V
56.5
56.5
pF
pF
COM
ON
capacitance
VCOM = V+ or GND,
Switch ON,
CCOM(ON)
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 17
See Figure 20
25°C
25°C
25°C
25°C
25°C
1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
2
105
–64
–64
0.06
pF
MHz
dB
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
BW
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 21
OISO
XTALK
THD
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 22
dB
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 24
%
Supply
25°C
Full
10
25
50
Positive supply
current
I+
VI = V+ or GND,
Switch ON or OFF
1.95 V
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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TYPICAL PERFORMANCE
3.5
T
= 85°C
= 25°C
= −40°C
1.5
1.3
1.1
0.9
0.7
0.5
0.3
0.1
A
T
A
= 255C
T
A
3
2.5
2
T
A
V = 1.8 V
+
V = 2.5 V
+
1.5
1
V+ = 3 V
0.5
V = 4.5 V
+
0
1
2
3
4
0
V
COM
(V)
0
1
2
3
4
V
COM
(V)
Figure 1. ron vs VCOM
Figure 2. ron vs VCOM (V+ = 3.3 V)
1.0
20
0
COM (on)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
NO/NC (on)
−20
T
= 85°C
= 25°C
= −40°C
A
T
A
NO/NC (off)
T
A
−40
−60 −40 −20
0
1
2
3
4
5
6
0
20
40
60
80
100
V
COM
(V)
Temperature (°C)
Figure 3. ron vs VCOM (V+ = 5 V)
Figure 4. Leakage Current vs Temperature
(V+ = 3.3 V)
3500
3000
2500
2000
1500
1000
500
70
60
COM (on)
50
V = 5 V
+
V = 3 V
+
40
30
20
10
NO/NC (on)
0
−10
−20
−30
0
0
1
2
3
4
5
6
−500
−60 −40 −20
0
20
40
60
80
100
Bias Voltage (V)
Temperature (°C)
Figure 5. Leakage Current vs Temperature
(V+ = 5 V)
Figure 6. Charge Injection (QC) vs VCOM
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TYPICAL PERFORMANCE (continued)
35
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
t
ON
t
OFF
t
ON
t
OFF
0
0
1
2
3
4
5
6
−40°C
25°C
(5C)
85°C
V
+
(V)
T
A
Figure 7. tON and tOFF vs Supply Voltage
Figure 8. tON and tOFF vs Temperature (5-V Supply)
2.5
0
V
IN
rising
−2
−4
2.0
1.5
1.0
0.5
0.0
V
IN
falling
−6
−8
−10
−12
−14
0
1
2
3
4
5
6
0.1
1
10
100
1000
V
+
(V)
Frequency (MHz)
Figure 9. Logic-Level Threshold vs V+
Figure 10. Bandwidth (V+ = 5 V)
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
V
= 3.3 V
+
V
= 5 V
+
0.1
1
10
100
1000
0
Frequency (MHz)
10
100
1000
10000
100000
Frequency (Hz)
Figure 11. OFF Isolation vs Frequency
Figure 12. Total Harmonic Distortion vs Frequency
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TYPICAL PERFORMANCE (continued)
250
200
150
100
50
0
-50
-40 °C
25°C
85°C
TA (°C)
Figure 13. Power-Supply Current vs Temperature (V+ = 5
V)
PIN DESCRIPTION
PIN
NO.
NAME
DESCRIPTION
1
2
IN1
NO1
GND
NO2
IN2
Digital control to connect COM to NO or NC
Normally open
3
Digital ground
4
Normally open
5
Digital control to connect COM to NO or NC
Common
6
COM2
NC2
V+
7
Normally closed
8
Power supply
9
NC1
COM1
Normally closed
10
Power supply
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PARAMETER DESCRIPTION
SYMBOL
VCOM
VNC
DESCRIPTION
Voltage at COM
Voltage at NC
Voltage at NO
VNO
ron
Resistance between COM and NC or COM and NO ports when the channel is ON
Peak on-state resistance over a specified voltage range
rpeak
Δron
Difference of ron between channels in a specific device
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under
worst-case input and output conditions
INC(OFF)
INC(PWROFF)
INO(OFF)
Leakage current measured at the NC port during the power-down condition, V+ = 0
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under
worst-case input and output conditions
INO(PWROFF)
INC(ON)
Leakage current measured at the NO port during the power-down condition, V+ = 0
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
INO(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state
and the output (NC or NO) open
ICOM(ON)
ICOM(PWROFF)
Leakage current measured at the COM port during the power-down condition, V+ = 0
Minimum input voltage for logic high for the control input (IN)
Maximum input voltage for logic low for the control input (IN)
Voltage at the control input (IN)
VIH
VIL
VI
IIH, IIL
Leakage current measured at the control input (IN)
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning ON.
tON
tOFF
tBBM
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning OFF.
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation
delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ΔVCOM. CL is the load capacitance and ΔVCOM is the change in analog output voltage.
QC
CNC(OFF)
CNO(OFF)
CNC(ON)
CNO(ON)
CCOM(ON)
CI
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
Capacitance of control input (IN)
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state.
OISO
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to
NC). This is measured in a specific frequency and in dB.
XTALK
BW
THD
I+
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
Total harmonic distortion is defined as the ratio of the root mean square (RMS) value of the second, third, and higher
harmonics to the magnitude of fundamental harmonic.
Static power-supply current with the control (IN) pin at V+ or GND
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PARAMETER MEASUREMENT INFORMATION
V
+
V
NC
NO
NC
COM
V
COM
+
Channel ON
COM * VNO or VNC
W
V
NO
V
r
+
on
V = V or V
IL
ICOM
IN
I
COM
V
I
I
IH
+
GND
Figure 14. ON-State Resistance (ron)
V
+
V
NC
NC
COM
V
COM
+
+
V
NO
NO
IN
OFF-State Leakage Current
Channel OFF
V = V or V
IL
I
IH
V
I
+
GND
Figure 15. OFF-State Leakage Current
(INC(OFF), INC(PWROFF), INO(OFF), INO(PWROFF), ICOM(OFF), ICOM(PWROFF)
)
V
+
V
NC
NC
COM
V
COM
+
V
NO
NO
IN
ON-State Leakage Current
Channel ON
V = V or V
IL
I
IH
V
I
+
GND
Figure 16. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON)
)
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V
+
V
V
NC
NO
NC
Capacitance
Meter
V
= V or GND
+
BIAS
NO
V = V or GND
I
+
V
COM
IN
COM
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
V
BIAS
V
I
GND
Figure 17. Capacitance (CI, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON)
)
V
+
TEST
R
L
C
L
V
COM
V
NC
or V
NC or NO
NC or NO
NO
t
50 Ω
50 Ω
35 pF
35 pF
V
ON
+
+
COM
IN
V
COM
(2)
C
L
R
L
t
V
OFF
V
I
V
0
Logic
Input
(V )
I
+
(2)
C
L
R
L
50%
50%
Logic
(1)
GND
Input
t
ON
t
OFF
Switch
Output
90%
90%
(V or V
)
NO
NC
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
C includes probe and jig capacitance.
L
O
r
f
Figure 18. Turn-On (tON) and Turn-Off Time (tOFF
)
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V
+
V
0
Logic
Input
(V )
I
+
V
NC
or V
NO
50%
90%
NC or NO
NC or NO
V
COM
COM
Switch
Output
90%
(2)
C
R
L
L
(V
)
COM
IN
V
I
t
BBM
Logic
(1)
V
or V = V
NO +
NC
GND
Input
R = 50 Ω
L
C = 35 pF
L
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
C includes probe and jig capacitance.
L
O
r
f
Figure 19. Break-Before-Make Time (tBBM
)
V
+
Network Analyzer
50 W
V
NC
NC
NO
Channel ON: NC to COM
V = V or GND
V
COM
COM
I
+
Source
Signal
Network Analyzer Setup
IN
V
Source Power = 0 dBm
(632-mV P-P at 50-W load)
I
50 W
+
GND
DC Bias = 350 mV
Figure 20. Bandwidth (BW)
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V
+
Network Analyzer
Channel OFF: NC to COM
V = V or GND
50 W
V
NC
NC
I
+
V
COM
COM
Source
Signal
50 W
NO
IN
Network Analyzer Setup
Source Power = 0 dBm
V
I
(632-mV P-P at 50-W load)
50 W
+
GND
DC Bias = 350 mV
Figure 21. OFF Isolation (OISO
)
V
+
Network Analyzer
Channel ON: NC to COM
Channel OFF: NO to COM
V = V or GND
50 W
V
V
NC
NC
V
COM
I
+
Source
Signal
NO
IN
NO
+
Network Analyzer Setup
50 W
V
I
50 W
Source Power = 0 dBm
(632-mV P-P at 50-W load)
GND
DC Bias = 350 mV
Figure 22. Crosstalk (XTALK
)
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V
IH
V
+
Logic
Input
(V
I)
OFF
ON
OFF
V
IL
R
GEN
NC or NO
NC or NO
COM
V
COM
+
V
COM
∆V
COM
V
GEN
(2)
C
L
V
= 0 to V
= 0
GEN
+
V
I
IN
R
GEN
C = 1 nF
L
Logic
(1)
GND
Q = C × ∆V
C L COM
Input
V = V or V
IL
I
IH
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
C includes probe and jig capacitance.
L
O
r
f
Figure 23. Charge Injection (QC)
V = V or V
IL
Channel ON: COM to NO
= V P-P
R = 600 Ω
I
IH
L
V /2
+
V
f = 20 Hz to 20 kHz
SOURCE
C = 50 pF
L
SOURCE
+
V
+
Audio Analyzer
R
L
10 mF
NO
10 mF
Source
Signal
COM
IN
(1)
C
L
600 W
600 W
V
I
GND
600 W
(1)
C includes probe and jig capacitance.
L
Figure 24. Total Harmonic Distortion (THD)
20
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Copyright © 2005–2009, Texas Instruments Incorporated
Product Folder Link(s): TS5A23159
PACKAGE OPTION ADDENDUM
www.ti.com
8-Dec-2009
PACKAGING INFORMATION
Orderable Device
TS5A23159DGSR
TS5A23159DGSRE4
TS5A23159DGSRG4
TS5A23159DGST
Status (1)
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
MSOP
DGS
10
10
10
10
10
10
10
10
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
MSOP
MSOP
MSOP
MSOP
MSOP
UQFN
UQFN
DGS
DGS
DGS
DGS
DGS
RSE
RSE
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
TS5A23159DGSTE4
TS5A23159DGSTG4
TS5A23159RSER
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
TS5A23159RSERG4
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
29-Jul-2010
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TS5A23159DGSR
TS5A23159RSER
TS5A23159RSER
MSOP
UQFN
UQFN
DGS
RSE
RSE
10
10
10
2500
3000
3000
330.0
180.0
179.0
12.4
8.4
5.3
3.4
1.4
8.0
4.0
4.0
12.0
8.0
Q1
Q1
Q1
1.68
1.75
2.13
2.25
0.76
0.65
8.4
8.0
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
29-Jul-2010
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TS5A23159DGSR
TS5A23159RSER
TS5A23159RSER
MSOP
UQFN
UQFN
DGS
RSE
RSE
10
10
10
2500
3000
3000
358.0
202.0
203.0
335.0
201.0
203.0
35.0
28.0
35.0
Pack Materials-Page 2
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