TS5A3153YEPR [TI]
1-ohm SPDT ANALOG SWITCH 5-V/3.3-V SINGLE-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER; 1欧姆SPDT模拟开关5 -V / 3.3 -V单通道2 ： 1多路复用器/
| 型号： | TS5A3153YEPR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 1-ohm SPDT ANALOG SWITCH 5-V/3.3-V SINGLE-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER |
| 文件： | 总21页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.ti.com
SCDS215 – OCTOBER 2005
Description
Features
D
D
D
D
D
D
D
D
D
Isolation in the Powered-Off Mode, V = 0
+
The TS5A3153 is a single-pole double-throw (SPDT)
analog switch that is designed to operate from 1.65 V
to 5.5 V. The device offers a low ON-state resistance
and an excellent on-resistance matching with the
break-before-make feature, to prevent signal distortion
during the transferring of a signal from one channel to
another. The device has an excellent total harmonic
distortion (THD) performance and consumes very low
power. These features make this device suitable for
portable audio applications.
Specified Break-Before-Make Switching
Low ON-State Resistance (1 W)
Control Inputs Are 5.5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
Applications
D
ESD Performance Tested Per JESD 22
− 2000-V Human-Body Model
(A114-B, Class II)
D
D
D
D
D
D
D
D
D
D
Cell Phones
PDAs
− 1000-V Charged-Device Model (C101)
Portable Instrumentation
Audio and Video Signal Routing
Low-Voltage Data Acquisition System
Communication Circuits
Modems
Summary of Characteristics
V = 5 V, T = 25°C
+
A
2:1 Multiplexer/
Demultiplexer
(SPDT)
Configuration
Number of channels
1
1.1 Ω
Hard Drives
ON-state resistance (r
)
on
Computer Peripherals
Wireless Terminals and Peripherals
ON-state resistance match (∆r
)
on
0.1 Ω
ON-state resistance flatness (r
)
0.15 Ω
on(flat)
Turn-on/turn-off time (t /t
)
20 ns/15 ns
12 ns
ON OFF
Break-before-make time (t
)
BBM
SSOP OR VSSOP PACKAGE
(TOP VIEW)
Charge injection (Q )
C
36 pC
Bandwidth (BW)
100 MHz
−65 dB at 1 MHz
−66 dB at 1 MHz
0.01%
1
2
3
4
8
7
6
5
COM
EN
V
+
OFF isolation (O
ISO
)
NC
NO
IN
Crosstalk (X )
TALK
Total harmonic distortion (THD)
Leakagecurrent(I /I
GND
GND
Logic
Control
)
20 nA
COM(OFF) NO(OFF)
Power-supply current (I )
+
0.1 µA
Package option
8-pin SSOP, VSSOP, or
DSBGA
YEA, YEP, YZA, OR YZP PACKAGE
(BOTTOM VIEW)
FUNCTION TABLE
NC TO COM,
COM TO NC
NO TO COM,
COM TO NO
Logic
Control
EN
IN
4
5
6
7
8
GND
GND
EN
IN
3
2
1
NO
NC
L
L
L
H
X
ON
OFF
ON
OFF
COM
V
+
H
OFF
OFF
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
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Copyright 2005, Texas Instruments Incorporated
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www.ti.com
SCDS215 – OCTOBER 2005
ORDERING INFORMATION
(1)
PACKAGE
(2)
T
A
ORDERABLE PART NUMBER
TOP-SIDE MARKING
NanoStar − WCSP (DSBGA)
0.17−mm Small Bump − YEA
TS5A3153YEAR
PREVIEW
NanoFree − WCSP (DSBGA)
0.17-mm Small Bump − YZA (Pb-free)
TS5A3153YZAR
TS5A3153YEPR
TS5A3153YZPR
PREVIEW
PREVIEW
PREVIEW
Tape and reel
NanoStar − WCSP (DSBGA)
0.23-mm Large Bump − YEP
−40°C to 85°C
NanoFree − WCSP (DSBGA)
0.23-mm Large Bump − YZP (Pb-free)
SSOP − DCT
Tape
TS5A3153DCT
PREVIEW
JCD
VSSOP − DCU
Tape and reel
TS5A3153DCUR
(1)
(2)
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package.
DBV/DCK: The actual top-side marking has one additional character that designates the assembly/test site.
YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following character
to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
(1)(2)
Absolute Minimum and Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
(3)
V
+
Supply voltage range
−0.5
6.5
V
V
V
NC
NO
(3)(4)(5)
Analog voltage range
−0.5
V
+
+ 0.5
V
V
COM
I
Analog port diode current
On-state switch current
V
V
, V , V
< 0
−50
mA
K
NC NO COM
I
I
I
−200
200
NC
NO
COM
, V , V
NC NO COM
= 0 to V
mA
+
(6)
On-state peak switch current
−400
400
6.5
(3)(4)
V
Digital input voltage range
−0.5
−50
V
I
I
I
I
Digital input clamp current
V < 0
I
mA
mA
mA
IK
Continuous current through V
100
100
220
227
140
102
150
+
+
Continuous current through GND
−100
−65
GND
DCT package
DCU package
(7)
θ
Package thermal impedance
°C/W
°C
JA
YEA/YZA package
YEP/YZP package
T
Storage temperature range
stg
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified
is not implied.
(2)
(3)
(4)
(5)
(6)
(7)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
Pulse at 1 ms duration < 10% duty cycle
The package thermal impedance is calculated in accordance with JESD 51-7.
2
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www.ti.com
SCDS215 – OCTOBER 2005
(1)
Electrical Characteristics for 5-V Supply
V
+
= 4.5 V to 5.5 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
TYP
Analog Switch
Analog signal
range
V
, V ,
COM NO
0
V
V
Ω
Ω
+
V
NC
25 °C
Full
0.9
0.8
1.1
1.3
0.9
1.1
Peak ON
resistance
0 ≤ (V
or V ) ≤ V ,
NC
Switch ON,
See Figure 13
NO
= −100 mA,
+
r
4.5 V
4.5 V
peak
I
COM
25°C
Full
ON-state
resistance
V
I
or V
= 2.5 V,
= 100 mA,
Switch ON,
See Figure 13
NO
NC
r
on
COM
ON-state
resistance match
between channels
25°C
0.05
0.10
0.10
V
or V
= 2.5 V,
= 100 mA,
Switch ON,
See Figure 13
NO
NC
∆r
on
4.5 V
4.5 V
Ω
Ω
I
COM
Full
25°C
Full
0.15
0.09
0 ≤ (V
or V ) ≤ V ,
NC
Switch ON,
See Figure 13
NO
= 100 mA,
+
I
COM
ON-state
resistance flatness
r
on(flat)
25°C
Full
0.15
0.15
V
I
or V
= 1 V, 1.5 V, 2.5 V,
= 100 mA,
Switch ON,
See Figure 13
NO
COM
NC
V
or V
NO
= 1 V, V = 4.5 V,
COM
25°C
−20
2
20
NC
NC
I
I
Switch OFF,
See Figure 14
NC(OFF),
NO(OFF)
or
or V
5.5 V
0 V
nA
NC, NO
Full
−150
150
V
= 4.5 V, V
COM
= 1 V,
NO
OFF leakage
current
25°C
−5
0.7
2
5
I
I
V
V
or V
NO
= 5.5 V to 0,
= 0 to 5.5 V,
Switch OFF,
See Figure 14
NC(PWROFF),
NO(PWROFF)
NC
COM
mA
Full
−25
25
V
NC
or V
NO
= 1 V, V
COM
= Open,
25°C
−20
20
NC, NO
I
,
Switch ON,
See Figure 15
or
NC(ON)
ON leakage
current
5.5 V
nA
I
V
V
or V
NO
= Open,
= 4.5 V,
NO(ON)
NC
COM
Full
−150
150
V
or
or V
NO
= 4.5 V, V
COM
= 1 V,
25°C
−20
2
20
NC
Switch ON,
See Figure 14
I
5.5 V
0 V
nA
COM(OFF)
COM
Full
−150
150
V
NC
or V
NO
= 1 V, V = 4.5 V,
COM
OFF leakage
current
25°C
−5
0.7
2
5
V
V
or V
= 0 to 5.5 V,
= 5.5 V to 0,
Switch OFF,
See Figure 14
NC
COM
NO
I
mA
COM(PWROFF)
Full
−25
25
V
NC
or V
NO
= Open, V = 1 V,
COM
25°C
−20
20
COM
Switch ON,
See Figure 15
or
ON leakage
current
I
5.5 V
nA
COM(ON)
V
V
or V
NO
= 4.5 V,
= Open,
NC
COM
Full
−150
150
(2)
Digital Control Inputs (IN, EN)
Input logic high
Input logic low
V
Full
Full
2.4
0
5.5
0.8
V
V
IH
V
IL
25°C
Full
−100
−100
25
100
100
Input leakage
current
I , I
IH IL
V = 5.5 V or 0
I
5.5 V
nA
(1)
(2)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V or GND to ensure proper device operation. Refer to the TI application report, Implications
+
of Slow or Floating CMOS Inputs, literature number SCBA004.
3
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www.ti.com
SCDS215 – OCTOBER 2005
(1)
Electrical Characteristics for 5-V Supply (continued)
V
+
= 4.5 V to 5.5 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
V
TYP
12.5
8.5
7
A
+
Dynamic
25°C
Full
5 V
1
1
16
V
R
= V ,
C = 35 pF,
L
COM
L
+
Turn-on time
t
ns
ON
= 50 Ω,
See Figure 17
C = 35 pF,
L
4.5 V to 5.5 V
5 V
17.5
25°C
Full
2.5
2
15
V
R
= V ,
COM
+
Turn-off time
t
ns
OFF
= 50 Ω,
See Figure 17
C = 35 pF,
L
4.5 V to 5.5 V
5 V
18
L
25°C
Full
1
12
Break-before-
make time
V
R
= V
NO
= V ,
+
NC
t
ns
BBM
= 50 Ω,
See Figure 18
4.5 V to 5.5 V
0.5
15
L
V
C
= 0, R
= 1 nF,
= 0,
GEN
L
GEN
Charge injection
Q
See Figure 22 25°C
See Figure 16 25°C
5 V
5 V
12
19
pC
pF
C
NC, NO
OFF capacitance
C
C
,
V
NC
or V = V or GND,
NO +
NC(OFF)
NO(OFF)
Switch OFF,
NC, NO
ON capacitance
C
C
,
V
or V = V or GND,
NO +
NC(ON)
NC
See Figure 16 25°C
See Figure 16 25°C
5 V
5 V
57
36
pF
pF
Switch ON,
NO(ON)
COM
OFF capacitance
V
NC
or V
= V or GND,
+
NO
C
COM(OFF)
Switch OFF,
COM
ON capacitance
V
= V or GND,
+
COM
Switch ON,
C
See Figure 16 25°C
See Figure 16 25°C
See Figure 19 25°C
5 V
5 V
5 V
5 V
5 V
57
2
pF
pF
COM(ON)
Digital input
capacitance
C
I
V = V or GND,
I
+
R
= 50 Ω,
L
Bandwidth
OFF isolation
Crosstalk
BW
97
MHz
dB
Switch ON,
R
= 50 Ω,
Switch OFF,
25°C
L
O
−64
−64
ISO
f = 1 MHz,
See Figure 20
R
= 50 Ω,
Switch ON,
25°C
L
X
TALK
dB
f = 1 MHz,
See Figure 21
f = 20 Hz to
20 kHz,
See Figure 23
Total harmonic
distortion
R
L
C
L
= 600 Ω,
= 50 pF,
THD
25°C
5 V
0.004
0.02
%
Supply
25°C
0.10
Positive supply
current
Switch ON or
OFF
I
+
V = V or GND,
5.5 V
µA
I
+
Full
0.50
(1)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
4
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SCDS215 – OCTOBER 2005
(1)
Electrical Characteristics for 3.3-V Supply
V
+
= 3 V to 3.6 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
TYP
Analog Switch
Analog signal
range
V
, V ,
COM NO
0
V
V
Ω
Ω
+
V
NC
25 °C
Full
1.3
1.2
1.6
1.8
1.5
1.7
Peak ON
resistance
0 ≤ (V
or V ) ≤ V ,
NC
Switch ON,
See Figure 13
NO
= −100 mA,
+
r
3 V
3 V
peak
I
COM
25°C
Full
ON-state
resistance
V
I
or V
= 2 V,
= 100 mA,
Switch ON,
See Figure 13
NO
NC
r
on
COM
ON-state
resistance match
between channels
25°C
0.08
0.15
0.15
V
or V
= 2 V, 0.8 V
= 100 mA,
Switch ON,
See Figure 13
NO
NC
∆r
on
3 V
3 V
Ω
Ω
I
COM
Full
0 ≤ (V
NO
or V ) ≤ V ,
NC
Switch ON,
See Figure 13
+
25°C
0.2
I
= 100 mA,
COM
ON-state
resistance flatness
r
on(flat)
25°C
0.09
0.15
0.15
V
I
or V
= 2 V, 0.8 V,
= 100 mA,
Switch ON,
See Figure 13
NO
COM
NC
Full
V
or V
NO
= 1 V, V
= 3 V,
= 1 V,
25°C
−20
−50
2
20
50
NC
NC
COM
I
I
Switch OFF,
See Figure 14
NO(OFF),
NC(OFF)
or
3.6 V
0 V
nA
mA
nA
NC, NO
OFF leakage
current
Full
V
or V
= 3V, V
NO
COM
25°C
−1
0.2
2
1
I
I
V
V
or V
= 0 to 3.6 V,
Switch OFF,
See Figure 14
NO(PWROFF),
NC(PWROFF)
NC
COM
NO
= 3.6 V to 0,
Full
−15
15
NC, NO
ON leakage
current
V
NC
or V
NO
= 1 V, V
= Open,
25°C
Full
−20
−50
−20
−50
20
50
20
50
COM
I
,
Switch ON,
See Figure 15
NC(ON)
or
or V
3.6 V
I
NO(ON)
V
V
= 3 V, V
= Open,
= 1 V,
NC
NO
COM
or V
= 3 V, V
= 1 V, V
25°C
Full
2
NC
NO
or
COM
Switch ON,
See Figure 14
I
3.6 V
0 V
nA
mA
nA
COM(OFF)
COM
OFF leakage
current
V
NC
or V
= 3 V,
NO
COM
25°C
−1
0.2
2
1
V
V
or V
= 3.6 to 0 V,
Switch OFF,
See Figure 14
NC
COM
NO
I
COM(PWROFF)
= 0 to 3.6 V,
Full
−15
15
COM
ON leakage
current
V
or V
NO
= Open, V
COM
= 1 V,
25°C
−20
−50
20
50
NC
NC
Switch ON,
See Figure 15
or
or V
I
3.6 V
COM(ON)
Full
V
= Open, V
COM
= 3 V,
NO
(2)
Digital Control Inputs (IN, EN)
Input logic high
Input logic low
V
Full
Full
2
0
5.5
0.8
V
V
IH
V
IL
25°C
Full
−100
−100
25
100
100
Input leakage
current
I , I
IH IL
V = 5.5 V or 0
I
3.6 V
nA
(1)
(2)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V or GND to ensure proper device operation. Refer to the TI application report, Implications
+
of Slow or Floating CMOS Inputs, literature number SCBA004.
5
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SCDS215 – OCTOBER 2005
(1)
Electrical Characteristics for 3.3-V Supply (continued)
V
+
= 3 V to 3.6 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
V
TYP
17
A
+
Dynamic
25°C
Full
3.3 V
1
1
22
V
R
= V ,
C = 35 pF,
L
COM
L
+
Turn-on time
t
ns
ON
= 50 Ω,
See Figure 17
C = 35 pF,
L
3 V to 3.6 V
3.3 V
24
25°C
Full
4.3
4
9.5
12
16
V
R
= V ,
COM
+
Turn-off time
t
ns
OFF
= 50 Ω,
See Figure 17
C = 35 pF,
L
3 V to 3.6 V
3.3 V
19
L
25°C
Full
2
22
Break-before-
make time
V
R
= V
NO
= V ,
+
NC
t
ns
BBM
= 50 Ω,
See Figure 18
3 V to 3.6 V
1
25
L
V
C
= 0, R
= 1 nF,
= 0,
GEN
L
GEN
Charge injection
Q
See Figure 22
25°C
25°C
3.3 V
3.3 V
8
pC
pF
C
NC, NO
OFF capacitance
C
C
,
V
NC
or V = V or GND,
NO +
NC(OFF)
NO(OFF)
See Figure 16
See Figure 16
See Figure 16
19
Switch OFF,
NC, NO
ON capacitance
C
C
,
V
NC
or V = V or GND,
NO +
NC(ON)
NO(ON)
25°C
25°C
3.3 V
3.3 V
57
36
pF
pF
Switch ON,
COM
OFF capacitance
V
NC
or V
= V or GND,
+
NO
C
COM(OFF)
Switch OFF,
COM
ON capacitance
V
= V or GND,
+
COM
Switch ON,
C
See Figure 16
See Figure 16
See Figure 19
25°C
25°C
25°C
25°C
25°C
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
57
2
pF
pF
COM(ON)
Digital input
capacitance
C
I
V = V or GND,
I
+
R
= 50 Ω,
L
Bandwidth
OFF isolation
Crosstalk
BW
97
MHz
dB
Switch ON,
R
= 50 Ω,
Switch OFF,
See Figure 20
L
O
−64
−64
ISO
f = 1 MHz,
R
= 50 Ω,
Switch ON,
See Figure 21
L
X
TALK
dB
f = 1 MHz,
f = 20 Hz to 20
kHz,
See Figure 23
Total harmonic
distortion
R
C
= 600 Ω,
= 50 pF,
L
L
THD
25°C
3.3 V
0.010
0.01
%
Supply
25°C
0.10
Positive supply
current
Switch ON or
OFF
I
+
V = V or GND,
I
3.6 V
µA
+
Full
0.25
(1)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
6
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SCDS215 – OCTOBER 2005
(1)
Electrical Characteristics for 2.5-V Supply
V
+
= 2.3 V to 2.7 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
TYP
Analog Switch
Analog signal
range
V
, V ,
COM NO
0
V
V
Ω
Ω
+
V
NC
25 °C
Full
1.9
1.6
2.5
2.7
2.1
2.5
Peak ON
resistance
0 ≤ (V
or V ) ≤ V ,
NC
Switch ON,
See Figure 13
NO
= −8 mA,
+
r
2.3 V
2.3 V
peak
I
COM
25°C
Full
ON-state
resistance
V
I
or V
= 1.8 V,
= 8 mA,
Switch ON,
See Figure 13
NO
NC
r
on
COM
ON-state
resistance match
between channels
25°C
0.12
0.2
0.2
V
or V
= 0.8 V,
= 8 mA,
Switch ON,
See Figure 13
NO
NC
∆r
on
2.3 V
2.3 V
Ω
Ω
I
COM
Full
0 ≤ (V
NO
or V ) ≤ V ,
NC
Switch ON,
See Figure 13
+
25°C
0.65
0.5
I
= 8 mA,
COM
ON-state
resistance flatness
r
on(flat)
25°C
1
1
V
I
or V
= 0.8 V, 1.8 V,
= 8 mA,
Switch ON,
See Figure 13
NO
COM
NC
Full
V
or V
NO
= 0.5 V, V
= 2.2 V,
= 0.5 V,
25°C
−20
−50
2
20
50
NC
NC
COM
I
I
Switch OFF,
See Figure 14
NO(OFF),
NC(OFF)
or
or V
2.7 V
0 V
nA
mA
nA
NC, NO
OFF leakage
current
Full
V
= 2.2 V, V
NO
COM
25°C
−1
0.1
2
1
I
I
V
V
or V
NO
= 2.7 V to 0,
= 0 to 2.7 V,
Switch OFF,
See Figure 14
NO(PWROFF),
NC(PWROFF)
NC
COM
Full
−10
10
NC, NO
ON leakage
current
V
NC
or V
= 0.5 V, V
= Open,
25°C
Full
−20
−50
−20
−50
20
50
20
50
NO
or
COM
I
,
Switch ON,
See Figure 15
NC(ON)
2.7 V
I
NO(ON)
V
V
or V
= 2.2 V, V
= 2.2 V, V
= Open,
= 0.5 V,
NC
NO
COM
or V
NO
or
= 0.5 V, V
25°C
Full
2
NC
COM
Switch ON,
See Figure 14
I
2.7 V
0 V
nA
mA
nA
COM(OFF)
COM
OFF leakage
current
V
NO
= 2.2 V,
COM
25°C
−1
0.1
2
1
V
V
or V
NO
= 0 to 2.7 V,
= 2.7 V to 0,
Switch OFF,
See Figure 14
NC
COM
I
COM(PWROFF)
Full
−10
10
COM
ON leakage
current
V
or V
= Open, V
= 0.5 V,
= 2.2 V,
25°C
−20
−50
20
50
NC
NC
NO
or
COM
Switch ON,
See Figure 15
I
2.7 V
COM(ON)
Full
V
or V
= Open, V
NO
COM
(2)
Digital Control Inputs (IN, EN)
Input logic high
Input logic low
V
Full
Full
1.8
0
5.5
0.6
V
V
IH
V
IL
25°C
Full
−100
−100
25
100
100
Input leakage
current
I , I
IH IL
V = 5.5 V or 0
I
2.7 V
nA
(1)
(2)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V or GND to ensure proper device operation. Refer to the TI application report, Implications
+
of Slow or Floating CMOS Inputs, literature number SCBA004.
7
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SCDS215 – OCTOBER 2005
(1)
Electrical Characteristics for 2.5-V Supply (continued)
V
+
= 2.3 V to 2.7 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
V
TYP
24
A
+
Dynamic
25°C
Full
2.5 V
1.7
1.5
5.2
5
31
V
R
= V ,
= 50 Ω,
C = 35 pF,
L
COM
L
+
Turn-on time
t
ns
ON
See Figure 17
C = 35 pF,
L
2.3 V to 2.7 V
2.5 V
33.5
25°C
Full
10.5
10
17
V
R
= V ,
COM
+
Turn-off time
t
ns
OFF
= 50 Ω,
See Figure 17
C = 35 pF,
L
2.3 V to 2.7 V
2.5 V
20
L
25°C
Full
3
30
Break-before-
make time
V
R
= V
NO
= 50 Ω,
= V ,
+
NC
t
ns
BBM
See Figure 18
2.3 V to 2.7 V
2
40
L
V
C
= 0, R
= 1 nF,
= 0,
GEN
L
GEN
Charge injection
Q
See Figure 22
25°C
25°C
2.5 V
6
pC
pF
C
NC, NO
OFF
capacitance
C
C
,
V
NC
or V = V or GND,
NO +
NC(OFF)
NO(OFF)
See Figure 16
See Figure 16
See Figure 16
2.5 V
19
Switch OFF,
NC, NO
ON capacitance
C
C
,
V
or V = V or GND,
NO +
NC(ON)
NO(ON)
NC
Switch ON,
25°C
25°C
2.5 V
2.5 V
57
36
pF
pF
COM
OFF
capacitance
V
or V = V or GND,
NO +
NC
Switch OFF,
C
COM(OFF)
COM
ON capacitance
V
= V or GND,
+
COM
Switch ON,
C
See Figure 16
See Figure 16
See Figure 19
25°C
25°C
25°C
25°C
25°C
25°C
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
57
2
pF
pF
COM(ON)
Digital input
capacitance
C
I
V = V or GND,
I
+
R
= 50 Ω,
L
Bandwidth
OFF isolation
Crosstalk
BW
100
−64
−64
0.020
MHz
dB
Switch ON,
R
= 50 Ω,
Switch OFF,
See Figure 20
L
O
ISO
f = 1 MHz,
R
= 50 Ω,
Switch ON,
See Figure 21
L
X
dB
TALK
f = 1 MHz,
Total harmonic
distortion
R
C
= 600 Ω,
= 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
L
L
THD
%
Supply
25°C
0.001
0.05
Positive supply
current
I
+
V = V or GND,
Switch ON or OFF
2.7 V
µA
I
+
Full
0.15
(1)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
8
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SCDS215 – OCTOBER 2005
(1)
Electrical Characteristics for 1.8-V Supply
V
+
= 1.65 V to 1.95 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
TYP
Analog Switch
Analog signal
range
V
, V ,
COM NO
0
V
V
Ω
Ω
+
V
NC
25°C
Full
5.2
2
15
20
Peak ON
resistance
0 ≤ (V
or V ) ≤ V ,
NC
Switch ON,
See Figure 13
NO
= −2 mA,
+
r
1.65 V
1.65 V
peak
I
COM
25°C
Full
2.7
3.1
ON-state
resistance
V
I
or V
= 1.5 V,
= 2 mA,
Switch ON,
See Figure 13
NO
NC
r
on
COM
ON-state
resistance match
between
25°C
Full
0.16
0.3
0.3
V
or V
= 0.6 V, 1.5 V,
= 2 mA,
Switch ON,
See Figure 13
NO
NC
∆r
on
1.65 V
1.65 V
Ω
Ω
I
COM
channels
0 ≤ (V
NO
or V ) ≤ V ,
NC
Switch ON,
See Figure 13
+
25°C
3
3
ON-state
resistance
flatness
I
= 2 mA,
COM
r
on(flat)
25°C
6
8
V
I
or V
= 0.6 V, 1.5 V,
= 2 mA,
Switch ON,
See Figure 13
NO
COM
NC
Full
V
or V
NO
= 0.3 V, V = 1.65 V,
COM
25°C
−20
−50
1.5
20
50
NC
NC
I
I
Switch OFF,
See Figure 14
NO(OFF),
NC(OFF)
or
or V
1.95 V
0 V
nA
mA
nA
NC, NO
OFF leakage
current
Full
V
= 1.65 V, V = 0.3 V,
COM
NO
25°C
−1
0.1
1.5
1
I
I
V
V
or V
NO
= 1.95 V to 0,
= 0 to 1.95 V,
Switch OFF,
See Figure 14
NO(PWROFF),
NC(PWROFF)
NC
COM
Full
−10
10
NC, NO
ON leakage
current
V
NC
or V
NO
= 0.3 V, V
COM
= Open,
25°C
Full
−20
−50
−20
−50
20
50
20
50
I
,
Switch ON,
See Figure 15
NC(ON)
or
or V
1.95 V
I
NO(ON)
V
V
= 1.65 V, V
NO COM
= Open,
= 0.3 V,
NC
or V
= 1.65 V, V
COM
25°C
Full
1.5
NC
NO
or
or V
Switch ON,
See Figure 14
I
1.95 V
0 V
nA
mA
nA
COM(OFF)
COM
OFF leakage
current
V
NC
= 0.3 V, V
COM
= 1.65 V,
NO
25°C
−1
0.06
1.5
1
V
V
or V
NO
= 0 to 1.95 V,
= 1.95 V to 0,
Switch OFF,
See Figure 14
NC
COM
I
COM(PWROFF)
Full
−10
10
COM
ON leakage
current
V
or V
NO
= Open, V
COM
= 0.3 V,
25°C
−20
−50
20
50
NC
NC
Switch ON,
See Figure 15
or
or V
I
1.95 V
COM(ON)
Full
V
= Open, V
COM
= 1.65 V,
NO
(2)
Digital Control Inputs (IN, EN)
Input logic high
Input logic low
V
Full
Full
1.5
0
5.5
0.6
V
V
IH
V
IL
25°C
Full
−100
−100
25
100
100
Input leakage
current
I , I
IH IL
V = 5.5 V or 0
I
1.95 V
nA
(1)
(2)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V or GND to ensure proper device operation. Refer to the TI application report, Implications
+
of Slow or Floating CMOS Inputs, literature number SCBA004.
9
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SCDS215 – OCTOBER 2005
(1)
Electrical Characteristics for 1.8-V Supply (continued)
V
+
= 1.65 V to 1.95 V, T = −40°C to 85°C (unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
V
TYP
45
A
+
Dynamic
25°C
Full
1.8 V
4.5
4
61
V
R
= V ,
C = 35 pF,
L
COM
L
+
Turn-on time
t
ns
ON
= 50 Ω,
See Figure 17
C = 35 pF,
L
1.65 V to 1.95 V
1.8 V
63
25°C
Full
5.4
5
12
19
V
R
= V ,
COM
+
Turn-off time
t
ns
OFF
= 50 Ω,
See Figure 17
C = 35 pF,
L
1.65 V to 1.95 V
1.8 V
21
L
25°C
Full
4
31
60
Break-before-
make time
V
R
= V
NO
= V ,
+
NC
t
ns
BBM
= 50 Ω,
See Figure 18
1.65 V to 1.95 V
3
65
L
V
C
= 0, R
= 1 nF,
= 0,
GEN
L
GEN
Charge injection
Q
See Figure 22 25°C
See Figure 16 25°C
1.8 V
4
pC
pF
C
NC, NO
OFF
capacitance
C
C
,
V
NC
or V = V or GND,
NO +
NC(OFF)
NO(OFF)
1.8 V
19
Switch OFF,
NC, NO
ON capacitance
C
C
,
V
or V = V or GND,
NO +
NC(ON)
NC
Switch ON,
See Figure 16 25°C
See Figure 16 25°C
1.8 V
1.8 V
57
36
pF
pF
NO(ON)
COM
OFF
capacitance
V
or V = V or GND,
NO +
NC
Switch OFF,
C
COM(OFF)
COM(ON)
COM
ON capacitance
V
= V or GND,
+
COM
Switch ON,
C
See Figure 16 25°C
See Figure 16 25°C
See Figure 19 25°C
1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
57
2
pF
pF
Digital input
capacitance
C
I
V = V or GND,
I
+
R
= 50 Ω,
L
Bandwidth
OFF isolation
Crosstalk
BW
100
−64
−64
MHz
dB
Switch ON,
R
= 50 Ω,
Switch OFF,
25°C
L
O
ISO
f = 1 MHz,
See Figure 20
R
= 50 Ω,
Switch ON,
25°C
L
X
TALK
dB
f = 1 MHz,
See Figure 21
f = 20 Hz to
20 kHz,
See Figure 23
Total harmonic
distortion
R
L
C
L
= 600 Ω,
= 50 pF,
THD
25°C
1.8 V
0.060
0.001
%
Supply
25°C
0.05
Positive supply
current
Switch ON or
OFF
I
+
V = V or GND,
1.95 V
µA
I
+
Full
0.1
(1)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
10
ꢀꢁ ꢂꢃ ꢄ ꢅꢂ ꢄ
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ꢊ
ꢔ
ꢆ
ꢏ
ꢐ
ꢃ
ꢉ
ꢉ
ꢔ
ꢊ
ꢕ
ꢖ
ꢅ
ꢗ
ꢘ
ꢊꢀ
ꢎ
ꢇ
ꢊꢔ
ꢙ
ꢔ
ꢚ
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SCDS215 – OCTOBER 2005
TYPICAL PERFORMANCE
3.5
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
+
= 1.8 V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
= 855C
= 255C
A
T
A
V
+
= 2.5 V
T
A
= –405C
V
+
= 3.3 V
V
= 5 V
+
0.2
0.0
0
1
2
3
4
5
6
0
1
2
3
4
V
COM
(V)
V
COM
(V)
Figure 2. r vs V
on
(V = 3 V)
COM +
Figure 1. r vs V
on
COM
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
45
40
35
30
25
20
15
10
5
T
= 855C
= 255C
= –405C
A
I
COM(OFF)
T
A
I
/
NONC(OFF)
T
A
I
/
NO NC(ON)
I
COM(ON)
0
0
1
2
3
4
5
6
−40
25
(°C)
85
V
(V)
T
A
COM
Figure 4. Leakage Current vs Temperature
Figure 3. r vs V
(V = 5 V)
+
on
COM
(V = 5.5 V)
+
20
10
50
40
30
20
10
0
t
ON
5
5
0
−10
−20
−30
−40
−50
−60
−70
V
+
= 5 V
V
+
= 3 V
t
OFF
5
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
1
2
3
4
5
V
COM
(V)
V
+
(V)
Figure 6. t
and t
vs Supply Voltage
ON
OFF
Figure 5. Charge Injection (Q ) vs V
C
COM
11
ꢀ ꢁ ꢂꢃ ꢄ ꢅ ꢂ ꢄ
ꢁ
ꢅ
ꢆW
ꢆ
ꢇ
ꢈ
ꢀ
ꢃ
ꢉ
ꢌ
ꢃ
ꢊ
ꢊ
ꢔ
ꢋ
ꢌ
ꢐ
ꢁ
ꢃ
ꢍ
ꢉ
ꢎ
ꢉ
ꢀ
ꢏ
ꢔ
ꢐ
ꢊ
ꢂ
ꢑꢒ
ꢄ
ꢓꢄ
ꢆ
ꢑ
ꢁ
ꢎ
ꢉ
ꢆ
ꢏ
ꢕ
ꢖ
ꢅ
ꢗ
ꢘ
ꢊꢀ
ꢎ
ꢇ
ꢊꢔ
ꢙ
ꢔ
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www.ti.com
SCDS215 – OCTOBER 2005
TYPICAL PERFORMANCE
16
14
12
10
8
2
t
1.8
1.6
1.4
1.2
ON
V
IH
V
IL
t
OFF
1
6
0.8
0.6
0.4
0.2
4
2
0
0
−40
25
85
0
1
2
3
(V)
4
5
6
T
(5C)
OFF
V
+
A
Figure 7. t
and t
(V = 4.5 V)
+
vs Temperature
ON
Figure 8. Logic-Level Threshold vs V
+
0
0
−10
−2
−20
−30
−40
−50
−60
−70
−80
−90
−4
−6
−8
−10
−12
−14
0.1
1
10
100
1000
0.1
1
10
100
1000
Frequency (MHz)
Frequency (MHz)
Figure 9. Bandwidth (Gain vs Frequency)
(V = 5 V)
Figure 10. OFF Isolation vs Crosstalk
(V = 5 V)
+
+
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
V
= 3 V
+
140
120
100
80
60
V
= 5 V
+
40
20
0
0
0
0.5
1
1.5
2
(5C)
2.5
3
3.5
4
0.001
0.1
1
10
100
T
A
Frequency (kHz)
Figure 11. Total Harmonic Distortion
vs Frequency
Figure 12. Power-Supply Current
vs Temperature (V = 5 V)
12
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www.ti.com
SCDS215 – OCTOBER 2005
PIN DESCRIPTION
PIN
NUMBER
NAME
DESCRIPTION
1
2
3
4
5
6
7
8
COM
EN
Common
Enable control input
Digital ground
GND
GND
IN
Digital ground
Digital control to connect COM to NO or NC
Normally open
NO
NC
Normally closed
V
+
Power supply
PARAMETER DESCRIPTION
SYMBOL
COM
NC
DESCRIPTION
V
V
V
Voltage at COM
Voltage at NC
Voltage at NO
NO
r
r
Resistance between COM and NC or COM and NO ports when the channel is ON
Peak on-state resistance over a specified voltage range
on
peak
∆r
on
Difference of r between channels in a specific device
on
r
Difference between the maximum and minimum value of r in a channel over the specified range of conditions
on
on(flat)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under worst-case
input and output conditions
I
I
I
I
I
NC(OFF)
Leakage current measured at the NC port during the power-off condition, V = 0
+
NC(PWROFF)
NO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under
worst-case input and output conditions
Leakage current measured at the NO port during the power-off condition, V = 0
+
NO(PWROFF)
NC(ON)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
I
I
I
NO(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state
and the output (NC or NO) open
COM(ON)
COM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the OFF state
and the output (NC or NO) open
I
Leakage current measured at the COM port during the power-off condition, V = 0
+
COM(PWROFF)
V
Minimum input voltage for logic high for the control input (IN, EN)
Maximum input voltage for logic low for the control input (IN, EN)
Voltage at the control input (IN, EN)
IH
IL
I
V
V
I , I
IH IL
Leakage current measured at the control input (IN, EN)
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning ON.
t
ON
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning OFF.
t
t
OFF
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation delay
between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
BBM
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC, NO, or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Q
C
Charge injection, Q = C × ∆V
, C is the load capacitance, and ∆V is the change in analog output voltage.
C
L
COM
L
COM
13
ꢀ ꢁ ꢂꢃ ꢄ ꢅ ꢂ ꢄ
ꢆW ꢁꢇ ꢈꢀ ꢃ ꢉꢃ ꢊ ꢋ ꢌ ꢁ ꢍꢎ ꢀ ꢏꢐ
ꢅ
ꢂ
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ꢑꢒ
ꢄ
ꢓꢄ
ꢆ
ꢑ
ꢁ
ꢎ
ꢉ
ꢌ
ꢊ
ꢔ
ꢆ
ꢏ
ꢐ
ꢃ
ꢉ
ꢉ
ꢔ
ꢊ
ꢕ
ꢖ
ꢅ
ꢗ
ꢘ
ꢊꢀ
ꢎ
ꢇ
ꢊ
ꢔ
ꢙ
ꢔ
ꢚ
ꢒ
ꢈ
ꢔ
ꢗ
ꢘ
ꢊꢀ
ꢎ
ꢇ
ꢊꢔ
ꢙ
ꢔ
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SCDS215 – OCTOBER 2005
PARAMETER DESCRIPTION (continued)
SYMBOL
DESCRIPTION
C
C
C
C
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is OFF
Capacitance of control input (IN, EN)
NC(OFF)
NO(OFF)
NC(ON)
NO(ON)
C
COM(ON)
C
COM(OFF)
C
I
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific frequency,
with the corresponding channel (NC to COM or NO to COM) in the OFF state.
O
ISO
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to NC). This
is measured in a specific frequency and in dB.
X
TALK
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is −3 dB below the DC gain.
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root mean
square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental harmonic.
THD
I
+
Static power-supply current with the control (IN, EN) pin at V or GND
+
14
ꢀꢁ ꢂꢃ ꢄ ꢅꢂ ꢄ
ꢆW ꢁꢇ ꢈꢀ ꢃꢉꢃ ꢊꢋ ꢌ ꢁ ꢍꢎ ꢀꢏ ꢐ
ꢅ
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www.ti.com
SCDS215 – OCTOBER 2005
PARAMETER MEASUREMENT INFORMATION
V
+
V
NC
NC
COM
V
COM
+
Channel ON
V
NO
NO
VCOM * VNO or VNC
r
+
W
on
ICOM
IN or EN
I
COM
V
I
V = V or V
IH IL
I
+
GND
Figure 13. ON-State Resistance (r
)
on
V
+
V
NC
NC
OFF-State Leakage Current
Channel OFF
COM
V
COM
+
+
V
NO
NO
V = V or V
I IH IL
IN or EN
V
I
+
GND
Figure 14. OFF-State Leakage Current (I
, I
, I
, I
I
)
NC(OFF) NC(PWROFF) NO(OFF) NO(PWROFF), COM(PWROFF)
V
+
V
V
NC
NC
COM
ON-State Leakage Current
Channel ON
V
COM
+
NO
NO
V = V or V
I IH IL
IN or EN
V
I
+
GND
Figure 15. ON-State Leakage Current (I
, I
, I
)
COM(ON) NC(ON) NO(ON)
15
ꢀ ꢁ ꢂꢃ ꢄ ꢅ ꢂ ꢄ
ꢁ
ꢅ
ꢆW
ꢆ
ꢇ
ꢈ
ꢀ
ꢃ
ꢉ
ꢌ
ꢃ
ꢊ
ꢊ
ꢔ
ꢋ
ꢌ
ꢐ
ꢁ
ꢃ
ꢍ
ꢉ
ꢎ
ꢉ
ꢀ
ꢏ
ꢔ
ꢐ
ꢊ
ꢂ
ꢑꢒ
ꢄ
ꢓꢄ
ꢆ
ꢑ
ꢁ
ꢎ
ꢉ
ꢆ
ꢏ
ꢕ
ꢖ
ꢅ
ꢗ
ꢘ
ꢊꢀ
ꢎ
ꢇ
ꢊꢔ
ꢙ
ꢔ
ꢚ
ꢒ
ꢈ
ꢔ
ꢗ
ꢘ
ꢊ
ꢀ
ꢎ
ꢇ
ꢊꢔ
ꢙ
ꢔ
ꢚ
www.ti.com
SCDS215 – OCTOBER 2005
V
+
V
V
NC
NC
Capacitance
Meter
V
= V or GND
+
BIAS
NO
NO
V = V or GND
I
+
V
COM
COM
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
V
BIAS
V
I
IN or EN
GND
Figure 16. Capacitance (C , C
, C , C , C , C , C
)
I
COM(OFF) COM(ON) NC(OFF) NO(OFF) NC(ON) NO(ON)
V
+
TEST
R
L
C
L
V
COM
V
NC
or V
NC or NO
NC or NO
NO
t
50 Ω
50 Ω
35 pF
35 pF
V
ON
+
+
COM
V
COM
(2)
C
L
R
L
t
V
OFF
IN or EN
V
I
V
0
Logic
Input
(V )
I
+
(2)
C
R
L
50%
50%
L
Logic
(1)
GND
Input
t
t
OFF
ON
Switch
Output
90%
90%
(V
NC
orV )
NO
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
O
r
f
C
L
includes probe and jig capacitance.
Figure 17. Turn-On (t ) and Turn-Off Time (t
)
ON
OFF
V
+
V
Logic
Input
(V )
I
+
V
NC
orV
NO
50%
NC or NO
NC or NO
0
V
COM
COM
Switch
Output
90%
t
90%
(2)
C
R
L
L
(V
)
COM
IN
V
I
BBM
Logic
(1)
V
or V = V
NO +
= 50 Ω
= 35 pF
NC
GND
Input
R
C
L
L
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
L
O
r
f
C
includes probe and jig capacitance.
Figure 18. Break-Before-Make Time (t
)
BBM
16
ꢀꢁ ꢂꢃ ꢄ ꢅꢂ ꢄ
ꢆW ꢁꢇ ꢈꢀ ꢃꢉꢃ ꢊꢋ ꢌ ꢁ ꢍꢎ ꢀꢏ ꢐ
ꢅ
ꢑ ꢒ ꢄꢓ ꢄ ꢆꢑ ꢁꢎ ꢉꢌ ꢊ ꢔꢆꢏꢐꢃꢉꢉ ꢔꢊ ꢕ ꢖꢅ ꢗ ꢘꢊꢀ ꢎꢇ ꢊꢔ ꢙꢔꢚꢒ ꢈꢔꢗ ꢘꢊꢀꢎ ꢇ ꢊꢔ ꢙꢔ ꢚ
www.ti.com
ꢂ
ꢆ
SCDS215 – OCTOBER 2005
V
+
Network Analyzer
50 W
V
NC
NC
NO
Channel ON: NC to COM
V = V or GND
V
COM
COM
I
+
Source
Signal
Network Analyzer Setup
IN or EN
V
I
Source Power = 0 dBm
50 W
(632-mV P-P at 50-W load)
+
GND
DC Bias = 350 mV
Figure 19. Bandwidth (BW)
V
+
Network Analyzer
Channel OFF: NC to COM
50 W
V
NC
NC
V = V or GND
I
+
V
COM
COM
Source
Signal
50 W
NO
Network Analyzer Setup
IN or EN
Source Power = 0 dBm
V
I
(632-mV P-P at 50-W load)
50 W
+
GND
DC Bias = 350 mV
Figure 20. OFF Isolation (O
)
ISO
V
+
Network Analyzer
Channel ON: NC to COM
Channel OFF: NO to COM
V = V or GND
50 W
V
V
NC
NC
V
COM
I
+
Source
Signal
NO
IN or EN
NO
Network Analyzer Setup
50 W
V
I
50 W
Source Power = 0 dBm
(632-mV P-P at 50-W load)
+
GND
DC Bias = 350 mV
Figure 21. Crosstalk (X
)
TALK
17
ꢀ ꢁ ꢂꢃ ꢄ ꢅ ꢂ ꢄ
ꢆW ꢁꢇ ꢈꢀ ꢃ ꢉꢃ ꢊ ꢋ ꢌ ꢁ ꢍꢎ ꢀ ꢏꢐ
ꢅ
ꢂ
ꢆ
ꢑꢒ
ꢄ
ꢓꢄ
ꢆ
ꢑ
ꢁ
ꢎ
ꢉ
ꢌ
ꢊ
ꢔ
ꢆ
ꢏ
ꢐ
ꢃ
ꢉ
ꢉ
ꢔ
ꢊ
ꢕ
ꢖ
ꢅ
ꢗ
ꢘ
ꢊ
ꢀ
ꢎ
ꢇ
ꢊꢔ
ꢙ
ꢔ
ꢚ
ꢒ
ꢈ
ꢔ
ꢗ
ꢘ
ꢊꢀ
ꢎ
ꢇ
ꢊꢔ
ꢙ
ꢔ
ꢚ
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SCDS215 – OCTOBER 2005
V
IH
V
+
Logic
Input
OFF
ON
OFF
V
(V
I)
IL
R
GEN
NC or NO
COM
V
COM
+
V
COM
∆V
COM
NC or NO
IN or EN
V
GEN
(2)
C
L
V
= 0 to V
= 0
= 1 nF
GEN
+
V
I
R
C
GEN
L
Logic
(1)
GND
Q = C ×∆V
V = V or V
I IH IL
C L COM
Input
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
O
r
f
C
L
includes probe and jig capacitance.
Figure 22. Charge Injection (Q )
C
V = V or V
IH
Channel ON: COM to NC
R
L
C
L
= 600 Ω
I
IL
V /2
+
V
= V P-P
+
f
= 20 Hz to 20 kHz
= 50 pF
SOURCE
SOURCE
V
+
Audio Analyzer
R
L
10 mF
NC
NO
10 mF
Source
Signal
COM
IN
(1)
C
L
600 W
600 W
V
I
GND
600 W
(1)
C
L
includes probe and jig capacitance.
Figure 23. Total Harmonic Distortion (THD)
18
PACKAGE OPTION ADDENDUM
www.ti.com
14-Nov-2005
PACKAGING INFORMATION
Orderable Device
TS5A3153DCUR
TS5A3153DCURE4
Status (1)
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
US8
DCU
8
3000
Pb-Free
(RoHS)
CU NIPDAU Level-1-260C-UNLIM
US8
DCU
8
3000
Pb-Free
(RoHS)
CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan
-
The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS
&
no Sb/Br)
-
please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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