TS5A3159-Q1_14 [TI]
1-Ω SPDT ANALOG SWITCH;
| 型号： | TS5A3159-Q1_14 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 1-Ω SPDT ANALOG SWITCH 光电二极管 |
| 文件： | 总25页 (文件大小：919K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TS5A3159-Q1
www.ti.com
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
1-Ω SPDT ANALOG SWITCH
Check for Samples: TS5A3159-Q1
1
FEATURES
•
•
•
•
Low Charge Injection
Excellent ON-Resistance Matching
Low Total Harmonic Distortion
•
•
Qualified for Automotive Applications
AEC-Q100 Qualified with the Following
Results:
1.65-V to 5.5-V Single-Supply Operation
–
Device Temperature Grade 1: –40°C to
125°C Ambient Operating Temperature
Range
APPLICATIONS
•
•
•
Cell Phones
–
–
Device HBM ESD Classification Level H2
Device CDM ESD Classification Level C3B
PDAs
Portable Instrumentation
•
•
•
Specified Break-Before-Make Switching
Low ON-State Resistance (1 Ω)
Control Inputs are 5-V Tolerant
DESCRIPTION
The TS5A3159-Q1 is a single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to
5.5 V. The device offers a low ON-state resistance and an excellent ON-resistance, matching with the break-
before-make feature to prevent signal distortion during the transferring of a signal from one channel to another.
The device has an excellent total harmonic distortion (THD) performance and consumes very low power. These
features make this device suitable for portable audio applications.
SOT-23 PACKAGE
(TOP VIEW)
TS5A3159
NO
GND
NC
1
2
3
6
5
4
IN
V
+
COM
Table 1. FUNCTION TABLE
IN
NC TO
NO TO
COM, COM COM, COM
TO NC
ON
TO NO
OFF
L
H
OFF
ON
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated
TS5A3159-Q1
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
www.ti.com
Table 2. Summary of Characteristics
V+ = 5 V and TA = 25°C
2:1 Multiplexer / Demultiplexer
(1 × SPDT)
Configuration
Number of channels
1
1.3 Ω
ON-state resistance (ron
)
ON-state resistance match (Δron
ON-state resistance flatness (ron(flat)
Turn on/turn off time (tON / tOFF
)
0.1 Ω
)
0.15 Ω
)
20 ns / 15 ns
12 ns
Break-before-make time (tBBM
Charge injection (QC)
Bandwidth (BW)
)
36 pC
100 MHz
–65 dB at 1 MHz
–65 dB at 1 MHz
0.01%
OFF isolation (OISO
Crosstalk (XTALK
)
)
Total harmonic distortion (THD)
Leakage current (INO(OFF) / INC(OFF)
Package option
)
±6 nA
6-pin DBV
ORDERING INFORMATION(1)
ORDERABLE PART NUMBER(2)
TS5A3159QDBVRQ1
TA
TOP-SIDE MARKING
–40°C to 125°C
UAAQ
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range (unless otherwise noted)
MIN
–0.5
–0.5
MAX UNIT
V+
Supply voltage range(2)
Analog voltage range(2)(3)(4)
6.5
V+ + 0.5
±50
V
V
VNO, VCOM
II / OK
Analog port diode current
VNO, VCOM < 0 or VNO, VCOM > V+
VNO, VCOM = 0 to V+
mA
mA
mA
V
INO, ICOM
ON−state switch current
±200
±400
6.5
ON−state peak switch current(5)
Digital input voltage range(2)(3)
Digital input clamp current
Continuous current through V+ or GND
Storage temperature range
VIN
IIK
−0.5
VIN < 0
−50
mA
mA
°C
kV
V
±100
150
Tstg
–65
Human body model (HBM) AEC-Q100 classification level H2
Charged device model (CDM) AEC-Q100 classification level C3B
2
ESD Rating
750
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to ground, unless otherwise specified.
(3) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(4) This value is limited to 5.5 V maximum.
(5) Pulse at 1 ms duration < 10% duty cycle.
2
Submit Documentation Feedback
Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: TS5A3159-Q1
TS5A3159-Q1
www.ti.com
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
THERMAL INFORMATION
TS5A3159-Q1
UNIT
THERMAL METRIC(1)
DBV (6 PINS)
θJA
Junction-to-ambient thermal resistance
192.9
133.3
θJCtop
θJB
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
37.6
°C/W
38.9
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
ψJB
37.1
N/A
θJCbot
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
Electrical Characteristics for 5-V Supply
V+ = 4.5 V to 5.5 V and TA = −40°C to 125°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
V+
MIN TYP(1) MAX UNIT
Analog Switch
VCOM
VNO,VNC
,
Analog signal range
Peak ON resistance
0
V+
V
25°C
Full
1
1.5
1.5
1.3
1.3
0 ≤ VNO or VNC ≤ V+,
ICOM = −30 mA
Switch ON,
See Figure 11
rpeak
4.5 V
Ω
25°C
Full
0.75
VNO or VNC = 2.5 V,
ICOM = −30 mA
Switch ON,
See Figure 11
ron
ON-state resistance
4.5 V
4.5 V
Ω
Ω
ON-state resistance match
between channels
VNO or VNC = 2.5 V,
ICOM = −30 mA
Switch ON,
See Figure 11
∆ron
25°C
25°C
0.1
0 ≤ VNO or VNC ≤ V+,
ICOM = −30 mA
0.233
Switch ON,
See Figure 11
ron(flat)
ON-state resistance flatness
4.5 V
Ω
VNO or VNC = 1 V, 1.5 V,
2.5 V,
ICOM = −30 mA
25°C
0.15
0.2
25°C
Full
−6
−150
−6
6
150
6
INC(OFF)
,
NC, NO
VNC or VNO = 4.5 V,
VCOM = 0
Switch OFF,
See Figure 12
5.5 V
5.5 V
nA
nA
INO(OFF)
OFF leakage current
25°C
Full
2.8
INC(ON)
,
NC, NO
VNC or VNO = 4.5 V,
VCOM = Open
Switch ON,
See Figure 13
INO(ON)
ON leakage current
−150
−8
150
8
VNC or VNO = 4.5 V or
Open,
VCOM = 4.5 V
25°C
0.47
COM
ON leakage current
Switch ON,
See Figure 13
ICOM(ON)
5.5 V
nA
Full
−150
150
Digital Inputs (IN)
VIH
Input logic high
Full
Full
Full
2.4
0
5.5
0.8
1
V
V
VIL
Input logic low
IIH, IIL
Dynamic
Input leakage current
VIN = 5.5 V or 0
5.5 V
−1
µA
25°C
Full
4.5 V
to 5.5
V
20
15
35
40
20
35
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
tON
Turn-on time
ns
ns
ns
25°C
Full
4.5 V
to 5.5
V
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
tOFF
Turn-off time
25°C
Full
4.5 V
to 5.5
V
1
1
12 14.5
VNC = VNO = V+ / 2,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
tBBM
Break-before-make time
QC
CNC(OFF)
CNO(OFF) OFF capacitance
Charge injection
NC, NO
CL = 1 nF, VGEN = 0 V,
See Figure 20
See Figure 14
25°C
5 V
36
23
pC
pF
,
VNC or VNO = V+ or GND,
Switch OFF,
25°C
5 V
(1) TA = 25°C
Copyright © 2012, Texas Instruments Incorporated
Submit Documentation Feedback
3
Product Folder Links: TS5A3159-Q1
TS5A3159-Q1
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
www.ti.com
Electrical Characteristics for 5-V Supply (continued)
V+ = 4.5 V to 5.5 V and TA = −40°C to 125°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
V+
MIN TYP(1) MAX UNIT
CNC(ON)
,
NC, NO
ON capacitance
VNC or VNO = V+ or GND,
Switch ON,
See Figure 14
25°C
5 V
84
pF
CNO(ON)
CCOM(ON)
CIN
COM
ON capacitance
VCOM = V+ or GND,
Switch ON,
See Figure 14
See Figure 14
See Figure 17
25°C
25°C
25°C
5 V
5 V
5 V
84
2.1
pF
pF
Digital input capacitance
VIN = V+ or GND,
RL = 50 Ω,
Switch ON,
BW
Bandwidth
100
MHz
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 18
OISO
OFF isolation
Crosstalk
25°C
25°C
5 V
5 V
–65
–65
dB
dB
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 19
XTALK
f = 600 Hz to 20
kHz,
See Figure 21
RL = 600 Ω,
CL = 50 pF,
THD
Total harmonic distortion
Positive supply current
25°C
5 V
0.01
%
Supply
25°C
Full
0.1
0.5
I+
VIN = V+ or GND,
Switch ON or OFF
5.5 V
µA
Electrical Characteristics for 3.3-V Supply
V+ = 3 V to 3.6 V and TA = −40°C to 125°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
V+
MIN TYP(1)
MAX UNIT
Analog Switch
VCOM
VNO,VNC
,
Analog signal range
0
V+
V
25°C
Full
1.35
2.2
2.2
1.8
1.8
0 ≤ VNO or VNC ≤ V+,
ICOM = −24 mA,
Switch ON,
See Figure 11
rpeak
Peak ON-state resistance
3 V
Ω
25°C
Full
1.15
VNO or VNC = 2 V,
ICOM = −24 mA,
Switch ON,
See Figure 11
ron
ON-state resistance
3 V
3 V
Ω
Ω
ON-state resistance match
between channels
VNO or VNC = 2 V, 0.8 V,
ICOM = −24 mA,
Switch ON,
See Figure 11
∆ron
25°C
25°C
25°C
0.11
0.225
0.25
0.2
0 ≤ VNO or VNC ≤ V+,
ICOM = −24 mA,
Switch ON,
See Figure 11
ron(flat)
ON-state resistance flatness
3 V
Ω
VNO or VNC = 2 V, 0.8 V,
ICOM = −24 mA,
INC(OFF)
INO(OFF)
,
NC, NO
OFF leakage current
VNC or VNO = 3 V,
VCOM = 0,
Switch OFF,
See Figure 12
25°C 3.6 V
25°C 3.6 V
25°C 3.6 V
nA
nA
nA
INC(ON)
INO(ON)
,
NC, NO
ON leakage current
VNC or VNO = 3 V,
VCOM = Open,
Switch ON,
See Figure 13
2.8
COM
ON leakage current
VNC or VNO = 3 V or Open,
VCOM = 3 V,
Switch ON,
See Figure 13
ICOM(ON)
0.47
Digital Inputs (IN)
VIH
Input logic high
Full
2
5.5
1
V
V
VIL
Input logic low
Full
0
0.6
IIH, IIL
Dynamic
Input leakage current
VIN = 5.5 V or 0
Full 3.6 V
–1
µA
25°C
Full
3 V
to
3.6 V
30
20
40
55
25
40
VCOM = V+,
RL = 50 Ω
CL = 35 pF,
See Figure 15
tON
Turn-on time
Turn-off time
ns
ns
25°C
Full
3 V
to
3.6 V
VCOM = V+,
RL = 50 Ω
CL = 35 pF,
See Figure 15
tOFF
(1) TA = 25°C
Submit Documentation Feedback
4
Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: TS5A3159-Q1
TS5A3159-Q1
www.ti.com
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
Electrical Characteristics for 3.3-V Supply (continued)
V+ = 3 V to 3.6 V and TA = −40°C to 125°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
V+
MIN TYP(1)
MAX UNIT
25°C
3 V
to
3.6 V
1
1
21
29
ns
VNC = VNO = V+ / 2,
RL = 50 Ω
CL = 35 pF,
See Figure 16
tBBM
Break-before-make time
Full
QC
Charge injection
CL = 1 nF, VGEN = 0 V
See Figure 20
See Figure 14
25°C 3.3 V
25°C 3.3 V
20
23
pC
pF
CNC(OFF)
,
VNC or VNO = V+ or GND,
Switch OFF
NC, NO OFF capacitance
CNO(OFF)
CNC(ON)
CNO(ON)
,
VNC or VNO = V+ or GND,
Switch ON
NC, NO ON capacitance
See Figure 14
25°C 3.3 V
84
pF
VCOM = V+ or GND,
Switch ON
CCOM(ON) COM ON capacitance
See Figure 14
See Figure 14
See Figure 17
25°C 3.3 V
25°C 3.3 V
25°C 3.3 V
84
2.1
pF
pF
CIN
Digital input capacitance
Bandwidth
VIN = V+ or GND
RL = 50 Ω,
Switch ON
BW
100
MHz
RL = 50 Ω,
f = 1 MHz
Switch OFF,
See Figure 18
OISO
OFF isolation
Crosstalk
25°C 3.3 V
25°C 3.3 V
–65
–65
dB
dB
RL = 50 Ω,
f = 1 MHz
Switch ON,
See Figure 19
XTALK
f = 600 Hz to 20
kHz,
See Figure 21
RL = 600 Ω,
CL = 50 pF
THD
Total harmonic distortion
Positive supply current
25°C 3.3 V
0.015
%
Supply
25°C
3.6 V
Full
0.1
μA
0.5
Switch ON or
OFF
I+
VIN = V+ or GND
Electrical Characteristics for 2.5-V Supply
V+ = 2.3 V to 2.7 V and TA = −40°C to 125°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
V+
MIN TYP(1) MAX UNIT
Analog Switch
VCOM
VNO,VNC
,
Analog signal range
0
V+
V
25°C
Full
1.7
2.9
2.9
2.3
2.3
0 ≤ VNO or VNC ≤ V+,
ICOM = −8 mA
Switch ON,
See Figure 11
rpeak
Peak ON-state resistance
2.5 V
2.5 V
Ω
25°C
Full
1.45
VNO or VNC = 1.8 V,
ICOM = −8 mA
Switch ON,
See Figure 11
ron
ON-state resistance
Ω
Ω
ON-state resistance match
between channels
VNO or VNC = 0.8 V, 1.8 V, Switch ON,
ICOM = −8 mA
∆ron
25°C 2.5 V
0.7
0.5
See Figure 11
0 ≤ VNO or VNC ≤ V+,
ICOM = −8 mA
25°C
2.5 V
25°C
Switch ON,
See Figure 11
ron(flat)
ON-state resistance flatness
Ω
VNO or VNC = 0.8 V, 1.8 V,
ICOM = −8 mA
0.45
0.2
INC(OFF)
INO(OFF)
,
NC, NO
Off leakage current
VNC or VNO = 2.3 V,
VCOM = 0
Switch OFF,
See Figure 12
25°C 2.7 V
25°C 2.7 V
nA
nA
INC(ON)
INO(ON)
,
NC, NO
On leakage current
VNC or VNO = 2.3 V,
VCOM = Open
Switch ON,
See Figure 13
2.8
VNC or VNO = 2.3 V or
Open,
VCOM = 2.3 V
COM
On leakage current
Switch ON,
See Figure 13
ICOM(ON)
25°C 2.7 V
0.47
nA
Digital Inputs (IN)
VIH
Input logic high
Full
1.8
0
5.5
1
V
V
VIL
Input logic low
Full
0.6
IIH, IIL
Input leakage current
VIN = 5.5 V or 0
Full 2.7 V
−1
µA
(1) TA = 25°C
Copyright © 2012, Texas Instruments Incorporated
Submit Documentation Feedback
5
Product Folder Links: TS5A3159-Q1
TS5A3159-Q1
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
www.ti.com
Electrical Characteristics for 2.5-V Supply (continued)
V+ = 2.3 V to 2.7 V and TA = −40°C to 125°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
V+
MIN TYP(1) MAX UNIT
Dynamic
25°C 2.3 V
to
40
30
33
55
70
40
55
39
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
tON
Turn-on time
ns
ns
ns
Full
2.7 V
25°C 2.3 V
to
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
tOFF
Turn-off time
Full
2.7 V
25°C 2.3 V
to
1
1
VNC = VNO = V+ / 2,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
tBBM
Break-before-make time
Full
2.7 V
QC
CNC(OFF)
CNO(OFF) OFF capacitance
Charge injection
NC, NO
CL = 1 nF, VGEN = 0 V,
See Figure 20
See Figure 14
25°C 2.5 V
25°C 2.5 V
13
23
pC
pF
,
VNC or VNO = V+ or GND,
Switch OFF,
CNC(ON)
,
NC, NO
ON capacitance
VNC or VNO = V+ or GND,
Switch ON,
See Figure 14
25°C 2.5 V
84
pF
CNO(ON)
CCOM(ON)
CIN
COM
ON capacitance
VCOM = V+ or GND,
Switch ON,
See Figure 14
See Figure 14
See Figure 17
25°C 2.5 V
25°C 2.5 V
25°C 2.5 V
84
2.1
pF
pF
Digital input capacitance
VIN = V+ or GND,
RL = 50 Ω,
Switch ON,
BW
Bandwidth
100
MHz
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 18
OISO
OFF isolation
Crosstalk
25°C 2.5 V
25°C 2.5 V
–64
–64
dB
dB
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 19
XTALK
f = 600 Hz to 20
kHz,
See Figure 21
RL = 600 Ω,
CL = 50 pF,
THD
Total harmonic distortion
Positive supply current
25°C 2.5 V
0.025
%
Supply
25°C
2.7 V
Full
0.1
0.5
I+
VIN = V+ or GND,
Switch ON or OFF
μA
Electrical Characteristics for 1.8-V Supply
V+ = 1.65 V to 1.95 V and TA = −40°C to 125°C (unless otherwise noted
TYP(
PARAMETER
TEST CONDITIONS
TA
V+
MIN
MAX UNIT
1)
Analog Switch
VCOM
VNO,VNC
,
Analog signal range
Peak
0
V+
V
25°C
Full
4
5.2
5.2
3.5
3.5
0 ≤ VNO or VNC ≤ V+,
Switch ON,
See Figure 11
rpeak
1.8 V
1.8 V
Ω
ON-state resistance ICOM = −2 mA
25°C
Full
1.7
VNO or VNC = 1.5 V,
ICOM = −2 mA
Switch ON,
See Figure 11
ron
ON-state resistance
Ω
Ω
ON-state resistance
match between
channels
25°C
0.7
0.7
VNO or VNC = 0.6 V, 1.5 V,
ICOM = −2 mA
Switch ON,
See Figure 11
∆ron
1.8 V
1.8 V
Full
25°C
Full
1.85
1.85
0.9
0 ≤ VNO or VNC ≤ V+,
ICOM = −2 mA
ON-state resistance
flatness
Switch ON,
See Figure 11
ron(flat)
Ω
25°C
Full
VNO or VNC = 0.6 V, 1.5 V,
ICOM = −2 mA
0.9
INC(OFF)
INO(OFF)
,
NC, NO
Off leakage current VCOM = 0
VNC or VNO = 1.65 V,
Switch OFF,
See Figure 12
1.95
V
25°C
0.2
nA
(1) TA = 25°C
Submit Documentation Feedback
6
Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: TS5A3159-Q1
TS5A3159-Q1
www.ti.com
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
Electrical Characteristics for 1.8-V Supply (continued)
V+ = 1.65 V to 1.95 V and TA = −40°C to 125°C (unless otherwise noted
TYP(
PARAMETER
TEST CONDITIONS
TA
V+
MIN
MAX UNIT
1)
INC(ON)
INO(ON)
,
NC, NO
VNC or VNO = 1.65 V, Switch ON,
1.95
V
25°C
25°C
2.8
nA
nA
On leakage current VCOM = Open
See Figure 13
COM
VNC or VNO = 1.65 V or Open,
Switch ON,
1.95
V
ICOM(ON)
0.47
On leakage current VCOM = 1.65 V
See Figure 13
Digital Inputs (IN)
VIH
VIL
Input logic high
Full
Full
1.5
0
5.5
0.6
V
V
Input logic low
Input leakage
current
1.95
V
IIH, IIL
VIN = 5.5 V or 0
Full
−1
1
µA
Dynamic
25°C 1.65
V to
65
40
60
70
95
55
70
72
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
tON
Turn-on time
Turn-off time
ns
ns
ns
1.95
V
Full
25°C 1.65
V to
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
tOFF
1.95
V
Full
25°C 1.65
V to
1
Break-before-make VNC = VNO = V+ / 2,
CL = 35 pF,
See Figure 16
tBBM
time
RL = 50 Ω,
1.95
V
Full
0.5
QC
CNC(OFF)
CNO(OFF) OFF capacitance
Charge injection
NC, NO
CL = 1 nF, VGEN = 0 V,
See Figure 20
See Figure 14
25°C 1.8 V
13
23
pC
pF
,
VNC or VNO = V+ or GND,
Switch OFF,
25°C 1.8 V
CNC(ON)
CNO(ON)
,
NC, NO
ON capacitance
VNC or VNO = V+ or GND,
Switch ON,
See Figure 14
See Figure 14
See Figure 14
See Figure 17
25°C 1.8 V
25°C 1.8 V
25°C 1.8 V
25°C 1.8 V
25°C 1.8 V
25°C 1.8 V
84
84
pF
pF
COM
ON capacitance
VCOM = V+ or GND,
Switch ON,
CCOM(ON)
Digital input
capacitance
CIN
VIN = V+ or GND,
2.1
100
–63
–63
pF
RL = 50 Ω,
Switch ON,
BW
OISO
Bandwidth
OFF isolation
Crosstalk
MHz
dB
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 18
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 19
XTALK
dB
Supply
25°C
Full
0.1
0.5
Positive supply
current
1.95
V
I+
VIN = V+ or GND,
Switch ON or OFF
μA
Copyright © 2012, Texas Instruments Incorporated
Submit Documentation Feedback
7
Product Folder Links: TS5A3159-Q1
TS5A3159-Q1
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
www.ti.com
TYPICAL CHARACTERISTICS
ron
vs
ron
vs
VCOM
VCOM
3.5
3
1.6
1.4
1.2
1
V
= 3 V
T
A
= 25C
+
T
= 85°C
A
T
A
= 25°C
2.5
2
V
V
= 1.8 V
+
T
A
= −40°C
V
+
= 2.5 V
0.8
0.6
0.4
0.2
0
1.5
1
= 3 V
+
V
= 4.5 V
0.5
0
+
0
1
2
3
4
0
1
2
3
V
(V)
COM
V
(V)
COM
Figure 1.
Figure 2.
Leakage Current
vs
tON/OFF
vs
Temperature
V+
50
18
V
= 5 V
V
T
= V
COM +
= 25°C
+
t
r
t
f
< 20 ns
16
14
12
10
8
A
< 20 ns
40
30
20
10
0
I
NC(ON)
6
I
COM(ON)
4
I
NO(ON)
2
I
NO(OFF)
I
NC(OFF)
0
0
1
2
3
4
5
6
−40
−20
0
20
40
60
80
100
Supply Voltage (V)
Temperature (°C)
Figure 3.
Figure 4.
tON/OFF
vs
Logic Threshold
vs
Temperature
Power Supply
20
2.5
2
t
r
t
f
= 2.5 ns
= 2.5 ns
V
= 5 V
18
16
14
12
10
8
+
V
t+
V
1.5
t–
1
0.5
0
6
4
2
0
1.5
2
2.5
3
3.5
4
4.5
5
−40
−20
0
20
40
60
80
100
Power Supply (V)
Temperature (°C)
Figure 5.
Figure 6.
8
Submit Documentation Feedback
Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: TS5A3159-Q1
TS5A3159-Q1
www.ti.com
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
TYPICAL CHARACTERISTICS (continued)
Power-Supply Current
vs
Frequency Response
Temperature
14
12
10
8
0
−10
−20
−30
−40
−50
−60
−70
−80
0
OFF Isolation
V = 5 V
+
−1
Bandwidth
−2
−3
−4
Crosstalk
6
−5
−6
4
−7
−8
−9
2
0
−90
0.1
−40
−20
0
20
40
60
80
100
1
10
100
1K
Frequency (MHz)
Temperature (°C)
Figure 7.
Figure 8.
Total Harmonic Distortion (THD)
vs
Frequency
0.035
V
= 3 V
+
0.030
0.025
0.020
0.015
0.010
0.005
0
10
100
1K
10K
100K
Frequency (MHz)
Figure 9.
Copyright © 2012, Texas Instruments Incorporated
Submit Documentation Feedback
9
Product Folder Links: TS5A3159-Q1
TS5A3159-Q1
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
www.ti.com
PIN DESCRIPTION
PIN
DESCRIPTION
NO. NAME
1
2
3
4
5
NO
Normally-open terminal
GND Digital ground
NC
Normally-closed terminal
COM Common terminal
V+
Power supply
Digital control pin to connect COM terminal to NO or
NC terminals
6
IN
PARAMETER DESCRIPTION
SYMBOL
VCOM
VNC
DESCRIPTION
Voltage at COM
Voltage at NC
Voltage at NO
VNO
ron
Resistance between COM and NC or COM and NO ports, when the channel is ON
Peak ON-state resistance over a specified voltage range
rpeak
∆ron
Difference of ron between channels
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under worst-case
input and output conditions
INC(OFF)
INO(OFF)
INC(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under worst-case
input and output conditions
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) being open
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) being open
INO(ON)
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state
and the output (NC or NO) being open
VIH
Minimum input voltage for logic high for the control input (IN)
Minimum input voltage for logic low for the control input (IN)
Voltage at IN
VIL
VIN
IIH, IIL
Leakage current measured at IN
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog outputs (COM, NC, or NO) signal, when the switch is turning ON.
tON
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog outputs (COM, NC, or NO) signal, when the switch is turning OFF.
tOFF
tBBM
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation delay
between the output of two adjacent analog channels (NC and NO), when the control signal changes state.
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC, NO, or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ∆VO, CL is the load capacitance, and ∆VO is the change in analog output voltage.
QC
CNC(OFF)
CNO(OFF)
CNC(ON)
CNO(ON)
CCOM(ON)
CIN
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
Capacitance of IN
OFF isolation of the switch is a measurement OFF-state switch impedance. This is measured in dB in a specific frequency,
with the corresponding channel (NC to COM or NO to COM) in the OFF state.
OISO
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to NC).
This is measured in a specific frequency and in dB.
XTALK
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is −3 dB below the DC gain.
10
Submit Documentation Feedback
Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: TS5A3159-Q1
TS5A3159-Q1
www.ti.com
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
PARAMETER DESCRIPTION (continued)
SYMBOL
DESCRIPTION
Static power-supply current with the control (IN) pin at V+ or GND
This is the increase in I+ for each control (IN) input that is at the specified voltage, rather than at V+ or GND.
I+
∆I+
Copyright © 2012, Texas Instruments Incorporated
Submit Documentation Feedback
11
Product Folder Links: TS5A3159-Q1
TS5A3159-Q1
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
www.ti.com
PARAMETER MEASUREMENT INFORMATION
V
+
V
V
NC
NO
NC
COM
V
COM
+
Channel ON
NO
VCOM VNO or VNC
ICOM
r
on
I
COM
V
I
IN
V = V or V
I IH IL
+
GND
Figure 10. ON-State Resistance (ron)
V
+
V
V
NC
NO
NC
COM
V
COM
+
OFF-State Leakage Current
Channel OFF
NO
V = V or V
IL
I
IH
V
I
IN
+
GND
Figure 11. OFF-State Leakage Current (INC(OFF), INO(OFF)
)
V
+
V
V
NC
NO
NC
COM
ON-State Leakage Current
Channel ON
V
COM
+
NO
V = V or V
IL
I
IH
V
I
NOTE: See electrical characteristics for test conditions.
IN
+
GND
Figure 12. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON)
)
12
Submit Documentation Feedback
Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: TS5A3159-Q1
TS5A3159-Q1
www.ti.com
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
PARAMETER MEASUREMENT INFORMATION (continued)
V
+
V
COM
COM
Capacitance
Meter
V
= V or GND
+
BIAS
V
NC
NO
NC
V = V or V
I IH IL
V
NO
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
V
BIAS
IN
V
I
GND
Figure 13. Capacitance (CI, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON)
)
V
+
TEST
R
L
C
L
V
COM
V
NC
or V
C
NC or NO
NC or NO
NO
t
50 Ω
50 Ω
35 pF
35 pF
V
+
ON
COM
V
COM
(2)
R
L
L
t
V
+
OFF
IN
V
I
V
0
Logic
Input
+
(2)
C
R
L
50%
50%
L
Logic
(1)
(V )
I
GND
Input
t
t
OFF
ON
Switch
Output
90%
90%
(V
NC
or V )
NO
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
f
O
r
C
L
includes probe and jig capacitance.
Figure 14. Turn-On (tON) and Turn-Off Time (tOFF
)
Copyright © 2012, Texas Instruments Incorporated
Submit Documentation Feedback
13
Product Folder Links: TS5A3159-Q1
TS5A3159-Q1
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
+
V
+
Logic
Input
V
NC
or V
NO
50%
NC or NO
NC or NO
(V )
I
0
V
COM
COM
Switch
Output
90%
t
90%
(2)
C
R
L
L
(V
)
COM
IN
V
I
BBM
Logic
(1)
V
or V = V /2
NO +
NC
GND
Input
R
= 50 Ω
L
L
C
= 35 pF
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
f
O
r
C
L
includes probe and jig capacitance.
Figure 15. Break-Before-Make Time (tBBM
)
V
+
Network Analyzer
50
V
NC
NC
NO
Channel ON: NC to COM
V = V or V
V
COM
COM
I
IH
IL
Source
Signal
Network Analyzer Setup
V
I
IN
Source Power = 0 dBM
50
(632-mV P-P at 50- load)
+
GND
DC Bias = 350 mV
Figure 16. Bandwidth (BW)
V
+
Network Analyzer
50
Channel OFF: NC to COM
V = V or V
V
NC
NC
I
IH
IL
V
COM
COM
Source
50
NO
IN
Signal
Network Analyzer Setup
Source Power = 0 dBM
V
I
(632-mV P-P at 50- load)
50
+
GND
DC Bias = 350 mV
Figure 17. OFF Isolation (OISO
)
14
Submit Documentation Feedback
Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: TS5A3159-Q1
TS5A3159-Q1
www.ti.com
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
PARAMETER MEASUREMENT INFORMATION (continued)
V
+
Network Analyzer
50
Channel ON: NC to COM
Channel OFF: NO to COM
V = V or V
V
V
NC
NC
V
COM
I
IH
IL
Source
NO
IN
NO
Signal
Network Analyzer Setup
50
V
I
50
Source Power = 0 dBM
+
GND
(632-mV P-P at 50- load)
DC Bias = 350 mV
Figure 18. Crosstalk (XTALK
)
V
IH
V
+
Logic
Input
OFF
ON
OFF
V
(V
I)
IL
R
GEN
NC or NO
NC or NO
COM
V
COM
+
V
COM
∆V
COM
V
GEN
(2)
C
L
V
= 0 to V
GEN
+
V
I
IN
R
C
= 0
GEN
= 0.1 nF
L
Logic
(1)
GND
Q
= C × ∆V
COM
C
L
Input
V = V or V
I IH IL
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
f
O
r
C
L
includes probe and jig capacitance.
Figure 19. Charge Injection (QC)
Copyright © 2012, Texas Instruments Incorporated
Submit Documentation Feedback
15
Product Folder Links: TS5A3159-Q1
TS5A3159-Q1
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
Channel ON: COM to NC
= V P-P
V
V /2
+
SOURCE
V = V or V
+
V
+
I
IH
IL
f
= 600 Hz to 20 kHz
SOURCE
R
C
L
10
F
R
= 600 Ω
L
L
NC
NO
C
= 50 pF
10
F
Analyzer
V
O
COM
IN
(1)
L
V
R
L
V
I
SOURCE
+
GND
(1)
C
L
includes probe and jig capacitance.
Figure 20. Total Harmonic Distortion (THD)
16
Submit Documentation Feedback
Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: TS5A3159-Q1
TS5A3159-Q1
www.ti.com
SCDS336A –NOVEMBER 2012–REVISED DECEMBER 2012
REVISION HISTORY
Changes from Original (November, 2012) to Revision A
Page
•
•
•
•
•
Device going from Preview to Production ............................................................................................................................. 1
Changed ON-state resistance from 1.1 to 1.3 Ω. ................................................................................................................. 2
Changd leakage current from ±20 nA to ±6 nA. ................................................................................................................... 2
Changed ron max values from 1.1 to 1.3 ............................................................................................................................... 3
Changed INC(OFF), INO(OFF) min and max values for 25°C from –2 and 2 to –6 and 6, respectively. Changed min and
max values for Full from –20 and 20 to –150 and 150, respectively. ................................................................................... 3
•
•
Changed INC(ON), INO(ON) min and max values for 25°C from –4 and 4 to –6 and 6, respectively. Changed min and
max values for Full from –40 and 40 to –150 and 150, respectively. ................................................................................... 3
Changed ICOM(ON) min and max values for 25°C from –4 and 4 to –8 and 8, respectively. Changed min and max
values for Full from –40 and 40 to –150 and 150, respectively. ........................................................................................... 3
•
•
•
•
•
•
•
•
•
•
Inserted 25°C above Full in TA column and inserted 0.5 µA max value for I+ ...................................................................... 4
Changed max values for rpeak from 2.1 to 2.2. ...................................................................................................................... 4
Changed max values for ron from 1.5 to 1.8. ........................................................................................................................ 4
Added 25°C to TA column and added 0.5 max value to I+ .................................................................................................... 5
Changed rpeak max values from 2.7 to 2.9. ........................................................................................................................... 5
Changed ron max values from 2 to 2.3. ................................................................................................................................. 5
Added 25°C to TA column and added 0.5 max value to I+. ................................................................................................... 6
Changed rpeak max values from 4.9 to 5.2. ........................................................................................................................... 6
Changed ron max values from 3.2 to 3.5. .............................................................................................................................. 6
Added 25°C to TA column and added 0.5 max value to I+. ................................................................................................... 7
Copyright © 2012, Texas Instruments Incorporated
Submit Documentation Feedback
17
Product Folder Links: TS5A3159-Q1
PACKAGE OPTION ADDENDUM
www.ti.com
24-Jan-2013
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package Qty
Eco Plan Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
Samples
Drawing
(1)
(2)
(3)
(4)
TS5A3159QDBVRQ1
ACTIVE
SOT-23
DBV
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
UAAQ
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) Only one of markings shown within the brackets will appear on the physical device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TS5A3159-Q1 :
Catalog: TS5A3159
•
Enhanced Product: TS5A3159-EP
•
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
24-Jan-2013
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
•
•
Enhanced Product - Supports Defense, Aerospace and Medical Applications
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Dec-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TS5A3159QDBVRQ1
SOT-23
DBV
6
3000
180.0
8.4
3.23
3.17
1.37
4.0
8.0
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Dec-2012
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SOT-23 DBV
SPQ
Length (mm) Width (mm) Height (mm)
202.0 201.0 28.0
TS5A3159QDBVRQ1
6
3000
Pack Materials-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products
Applications
Audio
www.ti.com/audio
amplifier.ti.com
dataconverter.ti.com
www.dlp.com
Automotive and Transportation www.ti.com/automotive
Communications and Telecom www.ti.com/communications
Amplifiers
Data Converters
DLP® Products
DSP
Computers and Peripherals
Consumer Electronics
Energy and Lighting
Industrial
www.ti.com/computers
www.ti.com/consumer-apps
www.ti.com/energy
dsp.ti.com
Clocks and Timers
Interface
www.ti.com/clocks
interface.ti.com
logic.ti.com
www.ti.com/industrial
www.ti.com/medical
Medical
Logic
Security
www.ti.com/security
Power Mgmt
Microcontrollers
RFID
power.ti.com
Space, Avionics and Defense
Video and Imaging
www.ti.com/space-avionics-defense
www.ti.com/video
microcontroller.ti.com
www.ti-rfid.com
www.ti.com/omap
OMAP Applications Processors
Wireless Connectivity
TI E2E Community
e2e.ti.com
www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2013, Texas Instruments Incorporated
相关型号：
©2020 ICPDF网 联系我们和版权申明