TS5A3159_14 [TI]
1 SPDT ANALOG SWITCH;
| 型号： | TS5A3159_14 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 1 SPDT ANALOG SWITCH 光电二极管 |
| 文件： | 总21页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢀ ꢁ ꢂꢃ ꢄꢅ ꢂꢆ
ꢇW ꢁꢈ ꢉꢀ ꢃꢊꢃ ꢋꢌ ꢍ ꢁ ꢎꢏ ꢀꢐ ꢑ
ꢅ
www.ti.com
SCDS174A − AUGUST 2004 – REVISED SEPTEMBER 2004
Description
Features
D
D
D
D
D
D
D
D
Specified Break-Before-Make Switching
Low ON-State Resistance (1 W)
Control Inputs Are 5-V Tolerant
Low Charge Injection
The TS5A3159 is a single-pole double throw (SPDT)
analog switch that is designed to operate from 1.65-V
to 5.5-V. The device offers a low ON-state resistance
and an excellent ON-resistance, matching with the
break-before-make feature to prevent signal distortion
during the transferring of a signal from one channel to
another. The device has an excellent total harmonic
distortion (THD) performance and consumes very low
power. These features make this device suitable for
portable audio applications.
Excellent ON-Resistance Matching
Low Total Harmonic Distortion
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
D
ESD Performance Tested Per JESD 22
− 2000-V Human-Body Model
(A114-B, Class II)
Applications
− 1000-V Charged-Device Model (C101)
D
D
D
Cell Phones
Summary of Characteristics
PDAs
V = 5 V and T = 25 °C
+
A
Portable Instrumentation
2:1 Multiplexer/
Demultiplexer
(1 × SPDT)
Configuration
Number of channels
1
1.1 Ω
SOT-23 OR SC-70 PACKAGE
(TOP VIEW)
ON-state resistance (r
)
on
ON-state resistance match (∆r
ON-state resistance flatness (r
Turn ON/turn OFF time (t /t
)
0.1 Ω
on
TS5A3159
NO
GND
NC
1
2
3
6
5
4
IN
V
)
0.15 Ω
on(flat)
)
20 ns/15 ns
12 ns
+
ON OFF
Break-before-make time (t
)
COM
BBM
Charge injection (Q )
C
36 pC
Bandwidth (BW)
100 MHz
−65 dB at 1 MHz
−65 dB at 1 MHz
0.01%
OFF isolation (O
ISO
)
FUNCTION TABLE
Crosstalk (X
)
TALK
NC TO COM
COM TO NC
NO TO COM
COM TO NO
Total harmonic distortion (THD)
IN
Leakagecurrent (I
/I
)
20 nA
NO(OFF) NC(OFF)
L
ON
OFF
6-pin DBV, DCK, YEP, or
YZP
Package option
H
OFF
ON
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
ꢈꢒ ꢌ ꢉꢓ ꢐ ꢀꢏ ꢌꢊ ꢉ ꢃꢀꢃ ꢔꢕ ꢖꢗ ꢘ ꢙꢚ ꢛꢔꢗꢕ ꢔꢜ ꢝꢞ ꢘ ꢘ ꢟꢕꢛ ꢚꢜ ꢗꢖ ꢠꢞꢡ ꢢꢔꢝ ꢚꢛꢔ ꢗꢕ ꢣꢚ ꢛꢟꢤ ꢈꢘ ꢗꢣꢞ ꢝꢛꢜ
ꢝ ꢗꢕ ꢖꢗꢘ ꢙ ꢛꢗ ꢜ ꢠꢟ ꢝ ꢔ ꢖꢔ ꢝ ꢚ ꢛꢔ ꢗꢕꢜ ꢠ ꢟꢘ ꢛꢥꢟ ꢛꢟ ꢘ ꢙꢜ ꢗꢖ ꢀꢟꢦ ꢚꢜ ꢏꢕꢜ ꢛꢘ ꢞꢙ ꢟꢕꢛ ꢜ ꢜꢛ ꢚꢕꢣ ꢚꢘ ꢣ ꢧ ꢚꢘ ꢘ ꢚ ꢕꢛꢨꢤ
ꢈꢘ ꢗ ꢣꢞꢝ ꢛ ꢔꢗ ꢕ ꢠꢘ ꢗ ꢝ ꢟ ꢜ ꢜ ꢔꢕ ꢩ ꢣꢗ ꢟ ꢜ ꢕꢗꢛ ꢕꢟ ꢝꢟ ꢜꢜ ꢚꢘ ꢔꢢ ꢨ ꢔꢕꢝ ꢢꢞꢣ ꢟ ꢛꢟ ꢜꢛꢔ ꢕꢩ ꢗꢖ ꢚꢢ ꢢ ꢠꢚ ꢘ ꢚꢙ ꢟꢛꢟ ꢘ ꢜꢤ
Copyright 2004, Texas Instruments Incorporated
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SCDS174A − AUGUST 2004 – REVISED SEPTEMBER 2004
ORDERING INFORMATION
(1)
(2)
T
A
PACKAGE
ORDERABLE PART NUMBER TOP-SIDE MARKING
NanoStar − WCSP (DSBGA)
0.23-mm Large Bump − YEP
TS5A3159YEPR
Tape and reel
NanoFree − WCSP (DSBGA)
0.23-mm Large Bump − YZP (Pb-free)
TS5A3159YZPR
−40°C to 85°C
SOT (SOT-23) − DBV
Tape and reel
Tape and reel
TS5A3159DBVR
TS5A3159DCKR
JA8_
JA_
(2)
SOT (SC-70) − DCK
(1)
(2)
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package.
DBV/DCK: The actual top-side marking has one additional character that designates the assembly/test site.
YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following character
to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
(1)
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
MIN
−0.5
−0.5
MAX
6.5
UNIT
V
(2)
V
V
Supply voltage range
+
(2)(3)(4)
Analog voltage range
,V
V
+ 0.5
50
V
NO COM
I/OK
+
I
I
Analog port diode current
ON−state switch current
ON−state peak switch current
V
, V
NO COM
< 0 or V , V
NO COM
> V
mA
mA
mA
V
+
, I
NO COM
V , V
NO COM
= 0 to V
200
400
+
(5)
(2)(3)
V
IN
Digital input voltage range
Digital input clamp current
−0.5
−65
6.5
−50
100
165
150
I
IK
V
IN
< 0
mA
mA
°C
Continuous current through V or GND
+
(6)
θ
JA
Package thermal impedance
T
stg
Storage temperature range
°C
(1)
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to ground unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
(2)
(3)
(4)
(5)
(6)
Pulse at 1 ms duration < 10% duty cycle.
The package thermal impedance is calculated in accordance with JESD 51-7.
2
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SCDS174A − AUGUST 2004 – REVISED SEPTEMBER 2004
Electrical Characteristics for 5-V Supply
V
+
= 4.5 V to 5.5 V and T = −40°C to 85°C (unless otherwise noted)
A
(1)
TYP
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
Analog Switch
V
,
COM
,V
Analog signal range
0
V
V
Ω
Ω
+
V
NO NC
25°C
Full
1
1.5
1.5
1.1
1.1
0 ≤ V
or V
NC
≤ V ,
Switch ON,
see Figure 11
NO
+
Peak ON resistance
ON-state resistance
r
4.5 V
4.5 V
peak
I
= −30 mA,
COM
25°C
Full
0.75
V
I
or V
= 2.5 V,
= −30 mA,
Switch ON,
see Figure 11
NO
COM
NC
r
on
ON-state resistance
match between
channels
V
or V
= 2.5 V,
= −30 mA,
Switch ON,
see Figure 11
NO
NC
∆r
on
25°C
25°C
25°C
4.5 V
4.5 V
0.1
Ω
Ω
I
COM
0 ≤ V
NO
or V ≤ V ,
NC +
= −30 mA,
0.233
I
COM
or V
ON-state resistance
flatness
Switch ON,
see Figure 11
r
V
NO
V,
= 1 V, 1.5 V, 2.5
NC
on(flat)
0.15
0.2
I
= −30 mA,
COM
25°C
Full
−2
−20
−4
2
20
4
NC, NO
OFF leakage Current
I
,
V
V
or V
= 0 to V ,
Switch OFF,
see Figure 12
NC(OFF)
NO(OFF)
NC
COM
NO
+
5.5 V
5.5 V
5.5 V
nA
nA
nA
I
= 0 to V ,
+
25°C
Full
2.8
NC, NO
ON leakage current
I
,
V
V
or V
NO
= Open,
= 0 to V ,
Switch ON,
see Figure 13
NC(ON)
NO(ON)
NC
COM
+
I
−40
−4
40
4
25°C
Full
0.47
COM
ON leakage current
V
V
or V
= Open,
Switch ON,
see Figure 13
NC
COM
NO
I
COM(ON)
= 0 to V ,
+
−40
40
Digital Inputs (IN)
Input logic high
V
Full
Full
Full
2.4
0
5.5
0.8
1
V
V
IH
Input logic low
V
IL
, I
Input leakage current
I
V
IN
= 5.5 V or 0
5.5 V
−1
µA
IH IL
(1)
T
A
= 25°C
3
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SCDS174A − AUGUST 2004 – REVISED SEPTEMBER 2004
Electrical Characteristics for 5-V Supply (continued)
V
+
= 4.5 V to 5.5 V and T = −40°C to 85°C (unless otherwise noted)
A
(1)
TYP
PARAMETER
Dynamic
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
25°C
Full
20
15
12
35
V
R
= V ,
= 50 Ω,
C = 35 pF,
L
4.5 V to
5.5 V
COM
L
+
Turn-on time
Turn-off time
t
ns
ON
see Figure 15
40
25°C
Full
20
V
R
= V ,
C
L
= 35 pF,
see Figure 15
4.5 V to
5.5 V
COM
+
t
ns
OFF
= 50 Ω,
35
L
25°C
Full
1
1
14.5
ns
Break-before-make
time
V
R
= V
= 50 Ω,
= V /2,
C
L
= 35 pF,
see Figure 16
4.5 V to
5.5 V
NC
NO
+
t
BBM
L
Charge injection
Q
C
= 1 nF, V
= 0 V,
see Figure 20
25°C
5 V
5 V
36
23
pC
pF
C
L
GEN
= V or GND,
NC, NO
OFF capacitance
C
C
,
V
NC
or V
NO
NC(OFF)
NO(OFF)
+
see Figure 14
see Figure 14
25°C
25°C
Switch OFF,
NC, NO
ON capacitance
C
C
,
V
NC
or V = V or GND,
NO +
NC(ON)
NO(ON)
5 V
84
pF
Switch ON,
COM
ON capacitance
V
= V or GND,
COM
+
C
see Figure 14
see Figure 14
see Figure 17
25°C
25°C
25°C
25°C
25°C
25°C
5 V
5 V
5 V
5 V
5 V
5 V
84
2.1
pF
pF
COM(ON)
Switch ON,
Digital input
capacitance
C
IN
V
= V or GND,
IN +
R
= 50 Ω,
L
Bandwidth
OFF isolation
Crosstalk
BW
100
−65
−65
0.01
MHz
dB
Switch ON,
R
= 50 Ω,
Switch OFF,
see Figure 18
L
O
ISO
f = 1 MHz,
R
= 50 Ω,
Switch ON,
see Figure 19
L
X
dB
TALK
f = 1 MHz,
Total harmonic
distortion
R
C
= 600 Ω,
= 50 pF,
f = 600 Hz to 20 kHz,
see Figure 21
L
L
THD
%
Supply
Positive supply
current
I
+
V
IN
= V or GND,
Switch ON or OFF
Full
5.5 V
0.1
µA
+
(1)
T
A
= 25°C
4
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SCDS174A − AUGUST 2004 – REVISED SEPTEMBER 2004
Electrical Characteristics for 3.3-V Supply
V
+
= 3 V to 3.6 V and T = −40°C to 85°C (unless otherwise noted)
A
(1)
TYP
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
Analog Switch
V
,
COM
,V
Analog signal range
0
V
V
Ω
Ω
+
V
NO NC
25°C
Full
1.35
2.1
2.1
1.5
1.5
Peak
ON-state resistance
0 ≤ V
or V
NC
≤ V ,
Switch ON,
see Figure 11
NO
+
r
3 V
3 V
peak
I
= −24 mA,
COM
25°C
Full
1.15
V
I
or V
= 2 V,
= −24 mA,
Switch ON,
see Figure 11
NO
COM
NC
ON-state resistance
r
on
ON-state resistance
match between
channels
V
or V
= 2 V, 0.8 V,
= −24 mA,
Switch ON,
see Figure 11
NO
NC
∆r
on
25°C
3 V
3 V
0.11
Ω
Ω
I
COM
0 ≤ V
NO
or V ≤ V ,
NC +
= −24 mA,
25°C
25°C
0.225
I
COM
ON-state resistance
flatness
Switch ON,
see Figure 11
r
on(flat)
V
or V
= 2 V, 0.8 V,
= −24 mA,
NO
NC
0.25
0.2
I
COM
25°C
Full
−2
−20
−4
2
20
4
NC, NO
OFF leakage Current
I
,
V
V
or V
= 0 to V ,
Switch OFF,
see Figure 12
NC(OFF)
NO(OFF)
NC
COM
NO
+
3.6 V
3.6 V
3.6 V
nA
nA
nA
I
= 0 to V ,
+
25°C
Full
2.8
NC, NO
ON-leakage Current
I
,
V
V
or V
NO
= Open,
= 0 to V ,
Switch ON,
see Figure 13
NC(ON)
NO(ON)
NC
COM
+
I
−40
−4
40
4
25°C
Full
0.47
COM
ON leakage current
V
V
or V
= Open,
Switch ON,
see Figure 13
NC
COM
NO
I
COM(ON)
= 0 to V ,
+
−40
40
Digital Inputs (IN)
Input logic high
V
Full
Full
Full
2
0
5.5
1
V
V
IH
Input logic low
V
0.6
IL
, I
Input leakage current
I
V
IN
= 5.5 V or 0
3.6 V
−1
µA
IH IL
(1)
T
A
= 25°C
5
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SCDS174A − AUGUST 2004 – REVISED SEPTEMBER 2004
Electrical Characteristics for 3.3-V Supply (continued)
(V = 3 V to 3.6 V and T = −40 °C to 85 °C) (unless otherwise noted)
+
A
(1)
TYP
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
Dynamic
25°C
Full
30
20
21
40
V
R
= V ,
= 50 Ω,
C = 35 pF,
L
3 V to
3.6 V
COM
L
+
Turn-on time
t
ns
ON
see Figure 15
55
25°C
Full
25
V
R
= V ,
C
L
= 35 pF,
see Figure 15
3 V to
3.6 V
COM
+
Turn-off time
t
ns
OFF
= 50 Ω,
40
L
25°C
Full
1
1
29
ns
Break-before-make
time
V
R
= V
= 50 Ω,
= V /2,
C
L
= 35 pF,
see Figure 16
3 V to
3.6 V
NC
NO
+
t
BBM
L
Charge injection
Q
C
= 1 nF, V
= 0 V,
see Figure 20
25°C
3.3 V
3.3 V
20
23
pC
pF
C
L
GEN
= V or GND,
NC, NO
OFF capacitance
C
C
,
V
NC
or V
NO
NC(OFF)
NO(OFF)
+
see Figure 14
see Figure 14
25°C
25°C
Switch OFF,
NC, NO
ON capacitance
C
C
,
V
NC
or V = V or GND,
NO +
NC(ON)
NO(ON)
3.3V
84
pF
Switch ON,
COM
ON capacitance
V
= V or GND,
COM
+
C
see Figure 14
see Figure 14
see Figure 17
25°C
25°C
25°C
25°C
25°C
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
84
pF
pF
COM(ON)
Switch ON,
Digital input
capacitance
C
IN
V
= V or GND,
2.1
IN +
R
= 50 Ω,
L
Bandwidth
OFF isolation
Crosstalk
BW
100
−65
−65
MHz
dB
Switch ON,
R
= 50 Ω,
Switch OFF,
see Figure 18
L
O
ISO
f = 1 MHz,
R
= 50 Ω,
Switch ON,
see Figure 19
L
X
dB
TALK
f = 1 MHz,
Total harmonic
distortion
R
C
= 600 Ω,
= 50 pF,
f = 600 Hz to 20 kHz,
see Figure 21
L
L
THD
25°C
3.3 V
3.6 V
0.015
%
Supply
Positive supply
current
I
+
V
IN
= V or GND,
Switch ON or OFF
Full
0.1
µA
+
(1)
T
A
= 25°C
6
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SCDS174A − AUGUST 2004 – REVISED SEPTEMBER 2004
Electrical Characteristics for 2.5-V Supply
V = 2.3 V to 2.7 V and T = −40°C to 85°C (unless otherwise noted)
+
A
(1)
TYP
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
Analog Switch
V
,
COM
,V
Analog signal range
0
V
V
Ω
Ω
+
V
NO NC
25°C
Full
1.7
2.7
2.7
2
Peak
ON-state resistance
0 ≤ V
or V
NC
≤ V ,
Switch ON,
see Figure 11
NO
+
r
2.5 V
2.5 V
peak
I
= −8 mA,
COM
25°C
Full
1.45
V
I
or V
= 1.8 V,
= −8 mA,
Switch ON,
see Figure 11
NO
COM
NC
ON-state resistance
r
on
2
ON-state resistance
match between
channels
V
or V
= 0.8 V, 1.8 V,
= −8 mA,
Switch ON,
see Figure 11
NO
NC
∆r
on
25°C
2.5 V
2.5 V
0.7
0.5
Ω
Ω
I
COM
0 ≤ V
NO
or V ≤ V ,
NC +
= −8 mA,
25°C
25°C
I
COM
ON-state resistance
flatness
Switch ON,
see Figure 11
r
on(flat)
V
or V
= 0.8 V, 1.8 V,
= −8 mA,
NO
NC
0.45
0.2
I
COM
25°C
Full
−2
−20
−4
2
20
4
NC, NO
Off-Leakage Current
I
,
V
V
or V
= 0 to V ,
Switch OFF,
see Figure 12
NC(OFF)
NO(OFF)
NC
COM
NO
+
2.7 V
2.7 V
2.7 V
nA
nA
nA
I
= 0 to V ,
+
25°C
Full
2.8
NC, NO
On-Leakage Current
I
,
V
V
or V
NO
= Open,
= 0 to V ,
Switch ON,
see Figure 13
NC(ON)
NO(ON)
NC
COM
+
I
−40
−4
40
4
25°C
Full
0.47
COM
On-Leakage Current
V
V
or V
= Open,
Switch ON,
see Figure 13
NC
COM
NO
I
COM(ON)
= 0 to V ,
+
−40
40
Digital Inputs (IN)
Input logic high
V
Full
Full
Full
1.8
0
5.5
1
V
V
IH
Input logic low
V
0.6
IL
, I
Input leakage current
I
V
IN
= 5.5 V or 0
2.7 V
−1
µA
IH IL
(1)
T
A
= 25°C
7
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SCDS174A − AUGUST 2004 – REVISED SEPTEMBER 2004
Electrical Characteristics for 2.5-V Supply (continued)
V = 2.3 V to 2.7 V and T = −40°C to 85°C (unless otherwise noted)
+
A
(1)
TYP
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
Dynamic
25°C
Full
40
30
33
55
V
R
= V ,
= 50 Ω,
C = 35 pF,
L
2.3 V to
2.7 V
COM
L
+
Turn-on time
t
ns
ON
see Figure 15
70
25°C
Full
40
V
R
= V ,
C
L
= 35 pF,
see Figure 15
2.3 V to
2.7 V
COM
+
Turn-off time
t
ns
OFF
= 50 Ω,
55
L
25°C
Full
1
1
39
ns
Break-before-make
time
V
R
= V
= 50 Ω,
= V /2,
C
L
= 35 pF,
see Figure 16
2.3 V to
2.7 V
NC
NO
+
t
BBM
L
Charge injection
Q
C
= 1 nF, V
= 0 V,
see Figure 20
25°C
2.5 V
2.5 V
13
23
pC
pF
C
L
GEN
= V or GND,
NC, NO
OFF capacitance
C
C
,
V
NC
or V
NO
NC(OFF)
NO(OFF)
+
see Figure 14
see Figure 14
25°C
25°C
Switch OFF,
NC, NO
ON capacitance
C
C
,
V
NC
or V = V or GND,
NO +
NC(ON)
NO(ON)
2.5V
84
pF
Switch ON,
COM
ON capacitance
V
= V or GND,
COM
+
C
see Figure 14
see Figure 14
see Figure 17
25°C
25°C
25°C
25°C
25°C
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
84
pF
pF
COM(ON)
Switch ON,
Digital input
capacitance
C
IN
V
= V or GND,
2.1
IN +
R
= 50 Ω,
L
Bandwidth
OFF isolation
Crosstalk
BW
100
−64
−64
MHz
dB
Switch ON,
R
= 50 Ω,
Switch OFF,
see Figure 18
L
O
ISO
f = 1 MHz,
R
= 50 Ω,
Switch ON,
see Figure 19
L
X
dB
TALK
f = 1 MHz,
Total harmonic
distortion
R
C
= 600 Ω,
= 50 pF,
f = 600 Hz to 20 kHz,
see Figure 21
L
L
THD
25°C
2.5 V
2.7 V
0.025
%
Supply
Positive supply
current
I
+
V
IN
= V or GND,
Switch ON or OFF
Full
0.1
µA
+
(1)
T
A
= 25°C
8
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SCDS174A − AUGUST 2004 – REVISED SEPTEMBER 2004
Electrical Characteristics for 1.8-V Supply
V = 1.65 V to 1.95 V and T = −40°C to 85°C (unless otherwise noted)
+
A
(1)
TYP
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
Analog Switch
V
,
COM
,V
Analog signal range
0
V
V
Ω
Ω
+
V
NO NC
25°C
Full
4
4.9
4.9
3.2
3.2
Peak
ON-state resistance
0 ≤ V
or V
NC
≤ V ,
Switch ON,
see Figure 11
NO
+
r
1.8 V
1.8 V
peak
I
= −2 mA,
COM
25°C
Full
1.7
V
I
or V
= 1.5 V,
= −2 mA,
Switch ON,
see Figure 11
NO
COM
NC
ON-state resistance
r
on
ON-state resistance
match between
channels
25°C
0.7
0.7
V
or V
= 0.6 V, 1.5 V,
= −2 mA,
Switch ON,
see Figure 11
NO
NC
∆r
on
1.8 V
1.8 V
Ω
Ω
I
COM
Full
25°C
Full
1.85
1.85
0.9
0 ≤ V
or V ≤ V ,
NC +
NO
I
= −2 mA,
COM
ON-state resistance
flatness
Switch ON,
see Figure 11
r
on(flat)
25°C
Full
V
I
or V
= 0.6 V, 1.5 V,
= −2 mA,
NO
COM
NC
0.9
25°C
Full
−2
−20
−4
0.2
2
20
4
NC, NO
Off-Leakage Current
I
,
V
or V
= 0 to V ,
+
= 0 to V ,
Switch OFF,
see Figure 12
NC(OFF)
NC
NO
+
1.95 V
1.95 V
1.95 V
nA
nA
nA
I
V
COM
NO(OFF)
25°C
Full
2.8
NC, NO
On-Leakage Current
I
I
,
V
V
or V
NO
= Open,
= 0 to V ,
Switch ON,
see Figure 13
NC(ON)
NO(ON)
NC
COM
+
−40
−4
40
4
25°C
Full
0.47
COM
On-Leakage Current
V
V
or V
= Open,
Switch ON,
see Figure 13
NC
COM
NO
I
COM(ON)
= 0 to V ,
+
−40
40
Digital Inputs (IN)
Input logic high
Input logic low
V
Full
Full
1.5
0
5.5
1
V
V
IH
V
0.6
IL
, I
Input leakage
current
I
V
IN
= 5.5 V or 0
Full
1.95 V
−1
µA
IH IL
(1)
T
A
= 25°C
9
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SCDS174A − AUGUST 2004 – REVISED SEPTEMBER 2004
Electrical Characteristics for 1.8-V Supply (continued)
V = 1.65 V to 1.95 V and T = −40°C to 85°C (unless otherwise noted)
+
A
(1)
TYP
PARAMETER
TEST CONDITIONS
MIN
MAX UNIT
SYMBOL
T
A
V
+
Dynamic
25°C
Full
65
40
60
70
V
R
= V ,
= 50 Ω,
C = 35 pF,
L
1.65 V to
1.95 V
COM
L
+
Turn-on time
t
ns
ON
see Figure 15
95
25°C
Full
55
V
R
= V ,
C
L
= 35 pF,
see Figure 15
1.65 V to
1.95 V
COM
+
Turn-off time
t
ns
OFF
= 50 Ω,
70
L
25°C
Full
1
72
ns
Break-before-make
time
V
R
= V
= 50 Ω,
= V /2,
C
L
= 35 pF,
see Figure 16
1.65 V to
1.95 V
NC
NO
+
t
BBM
0.5
L
Charge injection
Q
C
= 1 nF, V
= 0 V,
see Figure 20
25°C
1.8 V
1.8 V
13
23
pC
pF
C
L
GEN
= V or GND,
NC, NO
OFF capacitance
C
C
,
V
NC
or V
NO
NC(OFF)
NO(OFF)
+
see Figure 14
see Figure 14
25°C
25°C
Switch OFF,
NC, NO
ON capacitance
C
C
,
V
NC
or V = V or GND,
NO +
NC(ON)
NO(ON)
1.8V
84
pF
Switch ON,
COM
ON capacitance
V
= V or GND,
COM
+
C
see Figure 14
see Figure 14
see Figure 17
25°C
25°C
25°C
25°C
25°C
1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
84
pF
pF
COM(ON)
Switch ON,
Digital input
capacitance
C
IN
V
= V or GND,
2.1
IN +
R
= 50 Ω,
L
Bandwidth
BW
100
−63
−63
MHz
dB
Switch ON,
R
= 50 Ω,
Switch OFF,
see Figure 18
L
OFF isolation
O
ISO
f = 1 MHz,
R
= 50 Ω,
Switch ON,
see Figure 19
L
Crosstalk
X
dB
TALK
f = 1 MHz,
Supply
Positive supply
current
Switch ON or
OFF
I
+
V
IN
= V or GND,
Full
1.95 V
0.1
µA
+
(1)
T
A
= 25°C
10
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SCDS174A − AUGUST 2004 – REVISED SEPTEMBER 2004
TYPICAL PERFORMANCE
3.5
1.6
T
A
= 255C
V
= 3 V
+
3
2.5
2
1.4
1.2
1
T
= 85°C
A
T
A
= 25°C
V
= 1.8 V
+
T
A
= −40°C
V
= 2.5 V
+
0.8
0.6
0.4
0.2
0
1.5
1
V
= 3 V
+
V
= 4.5 V
0.5
0
+
0
1
2
3
4
0
1
2
3
V
(V)
COM
V
(V)
COM
Figure 1. r vs V
Figure 2. r vs V
on
COM
on
COM
18
1.2
V
= 5 V
+
V
= 4.5 V
+
16
14
12
10
8
1
T
A
= 85°C
0.8
T
= 25°C
A
0.6
0.4
I
NC(ON)
T
A
= −40°C
6
I
COM(ON)
4
I
NO(ON)
0.2
0
2
I
NO(OFF)
I
NC(OFF)
0
−40
−20
0
20
40
60
80 100
0
1
2
3
4
V
(V)
COM
Temperature (°C)
Figure 3. r vs V
on
COM
Figure 4. Leakage Current vs Temperature
50
40
30
20
10
0
20
18
16
14
12
10
8
V
T
=V
+
COM
= 25°C
t
r
t
f
< 20 ns
< 20 ns
t
r
t
f
= 2.5 ns
= 2.5 ns
V
= 5 V
+
A
6
4
2
0
−40
−20
0
20
40
60
80
100
0
1
2
3
4
5
6
Temperature (°C)
Supply Voltage (V)
Figure 5. t
vs V
+
Figure 6. t
vs Temperature
ON/OFF
ON/OFF
11
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0
−10
−20
−30
−40
−50
−60
−70
−80
−90
0
2.5
OFF Isolation
−1
V
IH
Bandwidth
2
−2
−3
−4
Crosstalk
V
1.5
IL
−5
−6
1
0.5
0
−7
−8
−9
1.5
2
2.5
3
3.5
4
4.5
5
0.1
1
10
Frequency (MHz)
100
1K
Power Supply (V)
Figure 8. Frequency Response
Figure 7. Logic Threshold vs Power Supply
0.035
14
12
10
8
V
= 5 V
+
V
= 3 V
+
0.030
0.025
0.020
0.015
0.010
0.005
0
6
4
2
0
10
100
1K
10K
100K
−40
−20
0
20
40
60
80
100
Frequency (MHz)
Temperature (°C)
Figure 10. Total Harmonic Distortion (THD) vs
Frequency
Figure 9. Power-Supply Current vs
Temperature
12
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SCDS174A − AUGUST 2004 – REVISED SEPTEMBER 2004
PIN DESCRIPTION
PIN
NUMBER
NAME
DESCRIPTION
1
2
3
4
5
6
NO
GND
NC
Normally-openterminal
Digital ground
Normally-closed terminal
Common terminal
Power supply
COM
V
+
IN
Digital control pin to connect the COM terminal to the NO or NC terminals
PARAMETER DESCRIPTION
SYMBOL
DESCRIPTION
V
Voltage at COM
Voltage at NC
Voltage at NO
COM
V
V
NC
NO
r
r
Resistance between COM and NC or COM and NO ports when the channel is ON
Peak ON-state resistance over a specified voltage range
on
peak
∆r
on
Difference of r between channels
on
r
Difference between the maximum and minimum value of r in a channel over the specified range of conditions
on
on(flat)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under worst-case
input and output conditions
I
I
I
I
I
NC(OFF)
NO(OFF)
NC(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under worst-case
input and output conditions
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output (COM)
being open
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output (COM)
being open
NO(ON)
COM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state and
the output (NC or NO) being open
V
V
V
Minimum input voltage for logic high for the control input (IN)
Minimum input voltage for logic low for the control input (IN)
Voltage at IN
IH
IL
IN
I , I
IH IL
Leakage current measured at IN
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay
between the digital control (IN) signal and analog outputs (COM, NC, or NO) signal when the switch is turning ON.
t
ON
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay
between the digital control (IN) signal and analog outputs (COM, NC, or NO) signal when the switch is turning OFF.
t
t
OFF
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation delay
between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
BBM
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC, NO, or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Q
C
Charge injection, Q = C × ∆V , C is the load capacitance and ∆V is the change in analog output voltage.
C
L
O
L
O
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PARAMETER DESCRIPTION (continued)
SYMBOL
DESCRIPTION
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
Capacitance of IN
C
NC(OFF)
NO(OFF)
NC(ON)
NO(ON)
COM(ON)
IN
C
C
C
C
C
OFF isolation of the switch is a measurement OFF-state switch impedance. This is measured in dB in a specific frequency,
with the corresponding channel (NC to COM or NO to COM) in the OFF state.
O
ISO
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to NC).
This is measured in a specific frequency and in dB.
X
TALK
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is −3 dB below the DC gain.
I
+
Static power supply current with the control (IN) pin at V or GND
+
∆I
+
This is the increase in I for each control (IN) input that is at the specified voltage, rather than at V or GND.
+ +
14
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SCDS174A − AUGUST 2004 – REVISED SEPTEMBER 2004
PARAMETER MEASUREMENT INFORMATION
V
+
V
NC
NO
NC
COM
V
COM
+
Channel ON
V
NO
VCOM * VNO or VNC
r
+
W
on
ICOM
I
COM
V
I
IN
V = V or V
I IH IL
+
GND
Figure 11. ON-State Resistance (r
)
on
V
+
V
NC
NO
NC
OFF-State Leakage Current
Channel OFF
COM
V
COM
+
+
V
NO
V = V or V
I
IH
IL
= 0 to V
+
V
NC
or V
and
NO
V
I
IN
V
COM
=V to 0
+
+
GND
Figure 12. OFF-State Leakage Current (I
, I
)
NC(OFF) NO(OFF)
V
+
V
V
NC
NO
NC
COM
ON-State Leakage Current
Channel ON
V
COM
+
NO
V = V or V
I
IH
IL
V
or V
= 0 to V , V
= Open (I )
, I
NC
NC
NO
or V
+
COM
NC(ON) NO(ON)
V
I
IN
V
= Open, V
= 0 to V (I
)
NO
COM
+
COM(ON )
+
GND
Figure 13. ON-State Leakage Current (I
, I
, I
)
COM(ON) NC(ON) NO(ON)
15
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V
+
V
COM
COM
Capacitance
Meter
V
= V or GND
+
BIAS
V
NC
NO
NC
V = V or V
I
IH IL
V
NO
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
V
BIAS
IN
V
I
GND
Figure 14. Capacitance (C , C
, C
, C
, C
, C
)
I
COM(ON) NC(OFF) NO(OFF) NC(ON) NO(ON)
V
+
TEST
R
L
C
L
V
COM
V
NC
or V
NC or NO
NC or NO
NO
t
50 Ω
50 Ω
35 pF
35 pF
V
ON
+
+
COM
IN
V
COM
(2)
C
L
R
L
t
V
OFF
V
I
V
0
Logic
Input
(V )
I
+
(2)
C
R
L
50%
50%
L
Logic
(1)
GND
Input
t
t
OFF
ON
Switch
Output
90%
90%
(V
NC
orV )
NO
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
O
r
f
C
L
includes probe and jig capacitance.
Figure 15. Turn-On (t ) and Turn-Off Time (t
)
ON
OFF
V
+
V
Logic
Input
(V )
I
+
V
NC
orV
NO
50%
NC or NO
NC or NO
0
V
COM
COM
Switch
Output
90%
t
90%
(2)
C
R
L
L
(V
)
COM
IN
V
I
BBM
Logic
(1)
V
or V = V /2
NO +
= 50 Ω
= 35 pF
NC
GND
Input
R
C
L
L
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
L
O
r
f
C
includes probe and jig capacitance.
Figure 16. Break-Before-Make Time (t
)
BBM
16
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V
+
Network Analyzer
50 W
V
NC
NC
NO
Channel ON: NC to COM
V = V or V
V
COM
COM
I
IH
IL
Source
Signal
Network Analyzer Setup
V
IN
Source Power = 0 dBM
(632-mV P-P at 50-W load)
I
50 W
+
GND
DC Bias = 350 mV
Figure 17. Bandwidth (BW)
V
+
Network Analyzer
Channel OFF: NC to COM
50 W
V
NC
NO
IN
NC
V = V or V
I IH IL
V
COM
COM
Source
Signal
50 W
Network Analyzer Setup
Source Power = 0 dBM
(632-mV P-P at 50-W load)
V
I
50 W
+
GND
DC Bias = 350 mV
Figure 18. OFF Isolation (O
)
ISO
V
+
Network Analyzer
Channel ON: NC to COM
Channel OFF: NO to COM
V = V or V
50 W
V
V
NC
NC
V
COM
I
IH
IL
Source
Signal
NO
IN
NO
Network Analyzer Setup
50 W
V
I
50 W
Source Power = 0 dBM
(632-mV P-P at 50-W load)
+
GND
DC Bias = 350 mV
Figure 19. Crosstalk (X
)
TALK
17
ꢀ ꢁ ꢂꢃ ꢄ ꢅ ꢂ ꢆ
ꢇW ꢁꢈ ꢉꢀ ꢃ ꢊꢃ ꢋ ꢌ ꢍ ꢁ ꢎꢏ ꢀ ꢐꢑ
ꢅ
www.ti.com
SCDS174A − AUGUST 2004 – REVISED SEPTEMBER 2004
V
IH
V
+
Logic
Input
OFF
ON
OFF
V
(V
I)
IL
R
GEN
NC or NO
NC or NO
COM
V
COM
+
V
COM
∆V
COM
V
GEN
(2)
C
L
V
= 0 to V
= 0
= 0.1 nF
GEN
+
V
I
IN
R
C
GEN
L
Logic
(1)
GND
Q = C ×∆V
V = V or V
I IH IL
C L COM
Input
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
O
r
f
C
L
includes probe and jig capacitance.
Figure 20. Charge Injection (Q )
C
Channel ON: COM to NC
= V P-P
V
V /2
+
SOURCE
V = V or V
+
V
+
I
IH
IL
f
= 600 Hz to 20 kHz
SOURCE
R
L
10 mF
R
C
= 600 Ω
L
L
NC
= 50 pF
10 mF
Analyzer
V
O
COM
IN
(1)
C
L
NO
V
R
L
V
I
SOURCE
+
GND
(1)
C
L
includes probe and jig capacitance.
Figure 21. Total Harmonic Distortion (THD)
18
MECHANICAL DATA
MPDS114 – FEBRUARY 2002
DCK (R-PDSO-G6)
PLASTIC SMALL-OUTLINE PACKAGE
0,30
0,15
M
0,10
0,65
6
4
0,13 NOM
1,40 2,40
1,10 1,80
1
3
Gage Plane
2,15
1,85
0,15
0°–8°
0,46
0,26
Seating Plane
0,10
1,10
0,80
0,10
0,00
4093553-3/D 01/02
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion.
D. Falls within JEDEC MO-203
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相关型号：
TS5A3160DCKJ
1-Ω, 5-V, 2:1 (SPDT), analog switch (6-pin SOT-23, SC70 packages) 6-SC70 -40 to 85
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