TS5A9411_14 [TI]

10-Ω SPDT ANALOG SWITCH SINGLE-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER;
TS5A9411_14
型号: TS5A9411_14
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

10-Ω SPDT ANALOG SWITCH SINGLE-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER

光电二极管
文件: 总21页 (文件大小:490K)
中文:  中文翻译
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TS5A9411  
www.ti.com ............................................................................................................................................................... SCDS241AMAY 2008REVISED JULY 2008  
10-SPDT ANALOG SWITCH  
SINGLE-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER  
1
FEATURES  
APPLICATIONS  
Cell Phones  
2.25-V to 5.5-V Single-Supply Operation  
Communication Systems  
Portable Test Equipment  
Battery Operated Systems  
Sample-and-Hold Circuits  
Low ON-State Resistance  
(10 Ω Max at V+ = 5V)  
Specified Break-Before-Make Switching  
Low Power Consumption  
TTL/CMOS Compatible Control Input  
Low Input/Output Capacitance  
DESCRIPTION  
The TS5A9411 is a single-pole double-throw (SPDT)  
analog switch that is designed to operate from 2.25 V  
to 5.5 V. The device offers low ON-state resistance,  
Latch-Up Performance Exceeds 100 mA  
Per JESD 78, Class II  
ESD Performance Tested Per JESD  
low  
leakage,  
and  
low  
power  
with  
a
break-before-make feature. These features make this  
device suitable for portable and battery-powered  
applications.  
2000-V Human-Body Model  
(A114-B, Class II)  
1000-V Charged-Device Model (C101)  
Control Inputs Are 5.5-V Tolerant  
FUNCTION TABLE  
Excellent ON-State Resistance Matching  
Low Total Harmonic Distortion (THD)  
NC TO COM,  
COM TO NC  
NO TO COM,  
COM TO NO  
IN  
L
ON  
OFF  
ON  
DCK PACKAGE  
(TOP VIEW)  
H
OFF  
6
5
NO  
1
2
3
IN  
V
+
COM  
NC  
4
GND  
ORDERING INFORMATION  
TA  
–40°C to 85°C  
PACKAGE(1)(2)  
SOT (SC-70) – DCK  
ORDERABLE PART NUMBER  
Tape and reel TS5A9411DCKR  
TOP-SIDE MARKING(3)  
32_  
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
website at www.ti.com.  
(3) DCK: The actual top-side marking has one additional character that designates the assembly/test site.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2008, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
TS5A9411  
SCDS241AMAY 2008REVISED JULY 2008 ............................................................................................................................................................... www.ti.com  
SUMMARY OF CHARACTERISTICS(1)  
2:1 Multiplexer/  
Configuration  
Demultiplexer  
(1 × SPDT)  
Number of channels  
1
5.3  
ON-state resistance (rON  
)
ON-state resistance match (ΔrON  
ON-state resistance flatness rON(flat)  
Turn-on/turn-off time (tON/tOFF  
)
0.03 Ω  
)
2 Ω  
)
9 ns/7 ns  
1 ns  
Break-before-make time (tBBM  
Charge injection (QC)  
Bandwidth (BW)  
)
12.5 pC  
100 MHz  
–84 dB at 1 MHz  
–85 dB at 1 MHz  
0.03%  
OFF isolation (OISO  
Crosstalk (XTALK  
)
)
Total harmonic distortion (THD)  
Leakage current (INO(OFF)/INC(OFF)  
Power-supply current (I+)  
Package options  
)
±3 nA  
0.01 µA  
6-pin DCK  
(1) V+ = 5 V, TA = 25°C  
ABSOLUTE MINIMUM AND MAXIMUM RATINGS(1)(2)  
over operating free-air temperature range (unless otherwise noted)  
MIN  
MAX  
UNIT  
V+  
Supply voltage range(3)  
–0.3  
6
V
VNO  
VNC  
Analog voltage range(3)(4)(5)  
–0.3 V+ + 0.3  
–50  
V
VCOM  
IK  
Analog port diode current  
On-state switch current  
VNC, VNO, VCOM < 0  
VNO, VNC, VCOM = 0 to V+  
mA  
mA  
INO  
INC  
ICOM  
–50  
50  
On-state peak switch current(6)  
–200  
200  
VI  
Digital input voltage range(3)(4)  
Digital input clamp current  
–0.5 V+ + 0.3  
V
IIK  
VI < 0  
–50  
100  
mA  
mA  
mA  
°C  
I+  
Continuous current through V+  
Continuous current through GND  
Storage temperature range  
IGND  
Tstg  
–100  
–65  
150  
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating  
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum  
(3) All voltages are with respect to ground, unless otherwise specified.  
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.  
(5) This value is limited to 5.5 V maximum.  
(6) Pulse at 1-ms duration < 10% duty cycle  
THERMAL IMPEDANCE RATINGS  
UNIT  
θJA  
Package thermal impedance(1)  
DCK package  
259  
°C/W  
(1) The package thermal impedance is calculated in accordance with JESD 51-7.  
2
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Copyright © 2008, Texas Instruments Incorporated  
Product Folder Link(s): TS5A9411  
TS5A9411  
www.ti.com ............................................................................................................................................................... SCDS241AMAY 2008REVISED JULY 2008  
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY(1)  
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)  
PARAMETER  
Analog Switch  
SYMBOL  
TEST CONDITIONS  
TA  
V+  
MIN  
TYP MAX UNIT  
Analog signal  
range  
VCOM  
VNO, VNC  
,
0
V+  
V
25°C  
Full  
5.3  
9
10  
ON-state  
resistance  
VNO or VNC = 3 V,  
ICOM = –10 mA,  
Switch ON,  
See Figure 6  
rON  
4.5 V  
4.5 V  
ON-state  
resistance  
match  
between  
channels  
25°C  
0.03  
0.3  
VNO or VNC = 3 V,  
ICOM = –10 mA,  
Switch ON,  
See Figure 6  
ΔrON  
Full  
0.3  
ON-state  
resistance  
flatness  
0 (VNO or VNC) V+,  
ICOM = –10 mA,  
Switch ON,  
See Figure 6  
rON(flat)  
25°C  
25°C  
4.5 V  
5.5 V  
2
VNC or VNO = 1 V,  
VCOM = 1 V to 4.5 V,  
or  
VNC or VNO = 4.5 V,  
VCOM = 1 V,  
–500  
–3  
500 pA  
nA  
500 pA  
nA  
500 pA  
NC, NO  
OFF leakage  
current  
INC(OFF)  
INO(OFF)  
,
Switch OFF,  
See Figure 7  
Full  
3
VNC or VNO = 1 V,  
VCOM = 1 V  
VNC or VNO = 4.5 V,  
VCOM = 4.5 V,  
25°C  
Full  
–500  
–3  
NC, NO  
ON leakage  
current  
INC(ON)  
,
Switch ON,  
See Figure 8  
5.5 V  
5.5 V  
INO(ON)  
3
VNC or VNO = Open,  
VCOM = 1 V,  
or  
VNC or VNO = Open,  
VCOM = 4.5 V,  
25°C  
–500  
COM  
ON leakage  
current  
Switch ON,  
See Figure 8  
ICOM(ON)  
Full  
–3  
3
nA  
Digital Input (IN)  
Input logic high  
Input logic low  
4.5 V to 5.5 V  
4.5 V  
2.4  
2
5.5  
5.5  
VIH  
VIL  
Full  
V
V
Full  
25°C  
Full  
4.5 V to 5.5 V  
0
0.8  
–0.05  
–0.05  
0.05  
0.05  
Input leakage  
current  
IIH, IIL  
VI = 5.5 V or 0  
5.5 V  
µA  
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum  
Copyright © 2008, Texas Instruments Incorporated  
Submit Documentation Feedback  
3
Product Folder Link(s): TS5A9411  
TS5A9411  
SCDS241AMAY 2008REVISED JULY 2008 ............................................................................................................................................................... www.ti.com  
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (continued)  
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)  
PARAMETER  
Dynamic  
SYMBOL  
TEST CONDITIONS  
TA  
V+  
MIN  
TYP MAX UNIT  
25°C  
Full  
5 V  
9
ns  
10  
VCOM = 3 V,  
RL = 300 ,  
CL = 35 pF,  
See Figure 10  
Turn-on time  
Turn-off time  
tON  
4.5 V to 5.5 V  
5 V  
25°C  
Full  
7
ns  
VCOM = 3 V,  
RL = 300 ,  
CL = 35 pF,  
See Figure 10  
tOFF  
4.5 V to 5.5 V  
7.5  
25°C  
Full  
1
Break-before-  
make time  
VNC = VNO = 3 V,  
RL = 300 ,  
CL = 35 pF,  
See Figure 11  
tBBM  
QC  
5 V  
5 V  
ns  
0.9  
VGEN = 0,  
RGEN = 0,  
CL = 1 nF,  
See Figure 15  
Charge injection  
25°C  
12.5  
3.5  
pC  
pF  
NC, NO  
OFF  
capacitance  
CNC(OFF)  
CNO(OFF)  
,
VNC or VNO = V+ or GND,  
f = 1 MHz,  
Switch OFF,  
See Figure 9  
25°C  
5 V  
NC, NO  
ON capacitance  
CNC(ON)  
CNO(ON)  
,
VNC or VNO = V+ or GND,  
f = 1 MHz,  
See Figure 9  
25°C  
25°C  
25°C  
25°C  
25°C  
25°C  
5 V  
5 V  
5 V  
5 V  
5 V  
5 V  
8.5  
8.5  
25  
pF  
pF  
COM  
ON capacitance  
VCOM = V+ or GND,  
f = 1 MHz,  
Switch ON,  
See Figure 9  
CCOM(ON)  
Digital input  
capacitance  
VI = V+ or GND,  
f = 1 MHz,  
CI  
See Figure 9  
See Figure 12  
pF  
RL = 50 ,  
Switch ON,  
Bandwidth  
OFF isolation  
Crosstalk  
BW  
100  
–84  
–85  
MHz  
dB  
RL = 50 , CL = 5 pF,  
f = 1 MHz,  
Switch OFF,  
See Figure 13  
OISO  
XTALK  
RL = 50 , CL = 5 pF,  
f = 1 MHz,  
Switch ON,  
See Figure 14  
dB  
f = 20 Hz to 20  
kHz,  
See Figure 16  
Total harmonic  
distortion  
RL = 600 ,  
CL = 50 pF,  
THD  
25°C  
5 V  
0.03  
0.01  
%
Supply  
25°C  
Full  
Positive supply  
current  
Switch ON or  
OFF  
I+  
VI = V+ or GND,  
5.5 V  
µA  
0.5  
4
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Copyright © 2008, Texas Instruments Incorporated  
Product Folder Link(s): TS5A9411  
TS5A9411  
www.ti.com ............................................................................................................................................................... SCDS241AMAY 2008REVISED JULY 2008  
ELECTRICAL CHARACTERISTICS FOR 3-V SUPPLY(1)  
V+ = 2.7 V to 3.3 V, TA = –40°C to 85°C (unless otherwise noted)  
PARAMETER  
Analog Switch  
SYMBOL  
TEST CONDITIONS  
TA  
V+  
MIN  
TYP MAX UNIT  
Analog signal  
range  
VCOM  
VNO, VNC  
,
0
V+  
V
25°C  
Full  
11.5  
0.05  
15  
20  
ON-state  
resistance  
VNO or VNC = 1.5 V,  
ICOM = –10 mA,  
Switch ON,  
See Figure 6  
rON  
2.7 V  
2.7 V  
ON-state  
resistance  
match  
between  
channels  
25°C  
0.3  
VNO or VNC = 1.5 V,  
ICOM = –10 mA,  
Switch ON,  
See Figure 6  
ΔrON  
Full  
0.3  
ON-state  
resistance  
flatness  
0 (VNO or VNC) V+,  
ICOM = –10 mA,  
Switch ON,  
See Figure 6  
rON(flat)  
25°C  
25°C  
3 V  
2
VNC or VNO = 1 V,  
VCOM = 1 V to 3 V,  
or  
VNC or VNO = 3 V,  
VCOM = 1 V,  
–400  
–2  
400 pA  
nA  
400 pA  
nA  
400 pA  
NC, NO  
OFF leakage  
current  
INC(OFF)  
INO(OFF)  
,
Switch OFF,  
See Figure 7  
3.3V  
Full  
2
VNC or VNO = 1 V,  
VCOM = 1 V  
VNC or VNO = 3 V,  
VCOM = 3 V,  
25°C  
Full  
–400  
–2  
NC, NO  
ON leakage  
current  
INC(ON)  
,
Switch ON,  
See Figure 8  
3.3 V  
3.3 V  
INO(ON)  
2
VNC or VNO = Open,  
VCOM = 1 V,  
or  
VNC or VNO = Open,  
VCOM = 3 V,  
25°C  
–400  
COM  
ON leakage  
current  
Switch ON,  
See Figure 8  
ICOM(ON)  
Full  
–2  
2
nA  
Digital Input (IN)  
Input logic high  
Input logic low  
VIH  
VIL  
Full  
Full  
2
0
5.5  
0.8  
V
V
25°C  
Full  
–0.05  
–0.05  
0.05  
0.05  
Input leakage  
current  
IIH, IIL  
VI = 5.5 V or 0  
3.6 V  
µA  
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum  
Copyright © 2008, Texas Instruments Incorporated  
Submit Documentation Feedback  
5
Product Folder Link(s): TS5A9411  
TS5A9411  
SCDS241AMAY 2008REVISED JULY 2008 ............................................................................................................................................................... www.ti.com  
ELECTRICAL CHARACTERISTICS FOR 3-V SUPPLY (continued)  
V+ = 2.7 V to 3.3 V, TA = –40°C to 85°C (unless otherwise noted)  
PARAMETER  
Dynamic  
SYMBOL  
TEST CONDITIONS  
TA  
V+  
MIN  
TYP MAX UNIT  
25°C  
Full  
3 V  
13  
ns  
15  
VCOM = 3 V,  
RL = 300 ,  
CL = 35 pF,  
See Figure 10  
Turn-on time  
Turn-off time  
tON  
2.7 V to 3.3 V  
3.3 V  
25°C  
Full  
7.5  
ns  
VCOM = 3 V,  
RL = 300 ,  
CL = 35 pF,  
See Figure 10  
tOFF  
2.7 V to 3.3 V  
8.5  
25°C  
Full  
1
Break-before-  
make time  
VNC = VNO = 3 V,  
RL = 300 ,  
CL = 35 pF,  
See Figure 11  
tBBM  
QC  
3.3 V  
3 V  
ns  
0.9  
VGEN = 0,  
RGEN = 0,  
CL = 1 nF,  
See Figure 15  
Charge injection  
25°C  
6
pC  
pF  
NC, NO  
OFF  
capacitance  
CNC(OFF)  
CNO(OFF)  
,
VNC or VNO = V+ or GND,  
f = 1 MHz,  
Switch OFF,  
See Figure 9  
25°C  
3 V  
3.5  
NC, NO  
ON capacitance  
CNC(ON)  
CNO(ON)  
,
VNC or VNO = V+ or GND,  
f = 1 MHz,  
Switch OFF,  
See Figure 9  
25°C  
25°C  
25°C  
25°C  
25°C  
25°C  
3 V  
3 V  
3 V  
3 V  
3 V  
3 V  
8.5  
8.5  
pF  
pF  
COM  
ON capacitance  
VCOM = V+ or GND,  
f = 1 MHz,  
Switch OFF,  
See Figure 9  
CCOM(ON)  
Digital input  
capacitance  
VI = V+ or GND,  
f = 1 MHz,  
CI  
See Figure 9  
See Figure 12  
2.5  
pF  
RL = 50 ,  
Switch ON,  
Bandwidth  
OFF isolation  
Crosstalk  
BW  
100  
–84  
–85  
MHz  
dB  
RL = 50 ,  
f = 1 MHz,  
Switch OFF,  
See Figure 13  
OISO  
XTALK  
RL = 50 ,  
f = 1 MHz,  
Switch ON,  
See Figure 14  
dB  
f = 20 Hz to 20  
kHz,  
See Figure 16  
Total harmonic  
distortion  
RL = 600 ,  
CL = 50 pF,  
THD  
25°C  
3 V  
0.09  
0.01  
%
Supply  
25°C  
Full  
Positive supply  
current  
Switch ON or  
OFF  
I+  
VI = V+ or GND,  
3.6 V  
µA  
0.5  
6
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Copyright © 2008, Texas Instruments Incorporated  
Product Folder Link(s): TS5A9411  
TS5A9411  
www.ti.com ............................................................................................................................................................... SCDS241AMAY 2008REVISED JULY 2008  
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY(1)  
V+ = 2.25 V to 2.75, TA = –40°C to 85°C (unless otherwise noted)  
PARAMETER  
Analog Switch  
SYMBOL  
TEST CONDITIONS  
TA  
V+  
MIN  
TYP  
MAX UNIT  
Analog signal  
range  
VCOM  
VNO, VNC  
,
0
V+  
V
25°C  
Full  
15  
25  
28  
ON-state  
resistance  
VNO or VNC = 1 V,  
ICOM = –10 mA,  
Switch ON,  
See Figure 6  
rON  
2.25 V  
2.25 V  
ON-state  
resistance  
match  
between  
channels  
25°C  
0.06  
0.3  
VNO or VNC = 1 V,  
ICOM = –10 mA,  
Switch ON,  
See Figure 6  
ΔrON  
Full  
0.3  
ON-state  
resistance  
flatness  
0 (VNO or VNC) V+,  
ICOM = –10 mA,  
Switch ON,  
See Figure 6  
rON(flat)  
25°C  
25°C  
2.25 V  
2.75 V  
4
VNC or VNO = 1.5 V,  
VCOM = 0.5 V to 1.5 V,  
or  
VNC or VNO = 1.5 V,  
VCOM = 1.5 V,  
–300  
–1  
300 pA  
nA  
300 pA  
nA  
300 pA  
NC, NO  
OFF leakage  
current  
INC(OFF)  
INO(OFF)  
,
Switch OFF,  
See Figure 7  
Full  
1
VNC or VNO = 1.5 V,  
VCOM = 0.5 V to 1.5 V  
VNC or VNO = 1.5 V,  
VCOM = 1.5 V,  
25°C  
Full  
–300  
–1  
NC, NO  
ON leakage  
current  
INC(ON)  
,
Switch ON,  
See Figure 8  
2.75 V  
2.75 V  
INO(ON)  
1
VNC or VNO = Open,  
VCOM = 0.5 V,  
or  
VNC or VNO = Open,  
VCOM = 1.5 V,  
25°C  
–300  
COM  
ON leakage  
current  
Switch ON,  
See Figure 8  
ICOM(ON)  
Full  
–1  
1
nA  
Digital Input (IN)  
Input logic high  
Input logic low  
VIH  
VIL  
Full  
Full  
2
0
5.5  
0.4  
V
V
25°C  
Full  
–0.05  
–0.05  
0.05  
0.05  
Input leakage  
current  
IIH, IIL  
VI = 5.5 V or 0 V  
2.75 V  
µA  
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum  
Copyright © 2008, Texas Instruments Incorporated  
Submit Documentation Feedback  
7
Product Folder Link(s): TS5A9411  
TS5A9411  
SCDS241AMAY 2008REVISED JULY 2008 ............................................................................................................................................................... www.ti.com  
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued)  
V+ = 2.25 V to 2.75, TA = –40°C to 85°C (unless otherwise noted)  
PARAMETER  
Dynamic  
SYMBOL  
TEST CONDITIONS  
TA  
V+  
MIN  
TYP  
MAX UNIT  
25°C  
Full  
2.5 V  
18  
VCOM = 2 V,  
RL = 300 ,  
CL = 35 pF,  
See Figure 10  
Turn-on time  
Turn-off time  
tON  
ns  
20  
2.25 V to  
2.75 V  
25°C  
Full  
2.5 V  
8
VCOM = 2 V,  
RL = 300 ,  
CL = 35 pF,  
See Figure 10  
tOFF  
ns  
2.25 V to  
2.75 V  
9.5  
25°C  
Full  
1
Break-before-  
make time  
VNC = VNO = 2 V,  
RL = 300 ,  
CL = 35 pF,  
See Figure 11  
tBBM  
QC  
2.5 V  
2.5 V  
ns  
0.9  
VGEN = 0,  
RGEN = 0,  
CL = 1 nF,  
See Figure 15  
Charge injection  
25°C  
4.5  
3.5  
pC  
NC, NO  
OFF  
capacitance  
CNC(OFF)  
CNO(OFF)  
,
VNC or VNO = V+ or GND,  
f = 1 MHz,  
Switch OFF,  
See Figure 9  
25°C  
2.5 V  
pF  
NC, NO  
ON capacitance  
CNC(ON)  
CNO(ON)  
,
VNC or VNO = V+ or GND,  
f = 1 MHz,  
Switch OFF,  
See Figure 9  
25°C  
25°C  
25°C  
25°C  
25°C  
25°C  
2.5 V  
2.5 V  
2.5 V  
2.5 V  
2.5 V  
2.5 V  
8.5  
8.5  
pF  
pF  
COM  
ON capacitance  
VCOM = V+ or GND,  
f = 1 MHz,  
Switch OFF,  
See Figure 9  
CCOM(ON)  
Digital input  
capacitance  
VI = V+ or GND,  
f = 1 MHz,  
Ci  
See Figure 9  
See Figure 12  
2.5  
pF  
RL = 50 ,  
Switch ON,  
Bandwidth  
OFF isolation  
Crosstalk  
BW  
100  
–84  
–84  
MHz  
dB  
RL = 50 ,  
f = 1 MHz,  
Switch OFF,  
See Figure 13  
OISO  
XTALK  
RL = 50 ,  
f = 1 MHz,  
Switch ON,  
See Figure 14  
dB  
f = 20 Hz to 20  
kHz,  
See Figure 16  
Total harmonic  
distortion  
RL = 600 ,  
CL = 50 pF,  
THD  
I+  
25°C  
2.5 V  
0.15  
0.01  
%
25°C  
Full  
Positive supply  
current  
Switch ON or  
OFF  
VI = V+ or GND,  
2.75 V  
µA  
0.5  
8
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TYPICAL PERFORMANCE  
14  
15  
12  
10  
V
= 2.5 V  
= 3.3 V  
+
10  
8
5
0
V
+
6
4
-5  
V
= 5 V  
+
2
-10  
-15  
0
0
1
2
3
4
5
6
0
5
10  
15  
20  
Figure 1. rON vs VIN  
Figure 2. Charge Injection (QC) vs VCOM  
20  
0
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
INS  
-20  
-40  
-60  
-80  
CRO  
-100  
-10  
100.00E+3  
-120  
1.00E+6  
10.00E+6  
100.00E+6  
1.00E+9  
100.0E+3  
1.0E+6  
10.0E+6  
100.0E+6  
1.0E+9  
Frequency (Hz)  
Frequency (Hz)  
Figure 3. Bandwidth (V+ = 3 V)  
Figure 4. OFF Isolation vs Crosstalk (V+ = 3 V)  
0.1  
0.09  
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
10.0E+0  
100.0E+0  
1.0E+3  
Frequency (Hz)  
10.0E+3  
100.0E+3  
Figure 5. Total Harmonic Distortion vs Frequency  
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PIN DESCRIPTION  
PIN  
NO.  
NAME  
DESCRIPTION  
1
IN  
V+  
Digital control to connect COM to NO  
Power supply  
2
3
GND  
NC  
Digital ground  
4
Normally closed  
Common  
5
COM  
NO  
6
Normally open  
PARAMETER DESCRIPTION  
SYMBOL  
VCOM  
VNC  
DESCRIPTION  
Voltage at COM  
Voltage at NC  
Voltage at NO  
VNO  
rON  
Resistance between COM and NC or COM and NO ports when the channel is ON  
Difference of ron between channels  
ΔrON  
rON(flat)  
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions  
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under  
worst-case input and output conditions  
INC(OFF)  
INO(OFF)  
INC(ON)  
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under  
worst-case input and output conditions  
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the  
output (COM) being open  
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the  
output (COM) being open  
INO(ON)  
ICOM(ON)  
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON  
state and the output (NC or NO) being open  
ICOM(PWROFF)  
Leakage current measured at the COM port during the power-down condition, V+ = 0  
Minimum input voltage for logic high for the control input (IN)  
Maximum input voltage for logic low for the control input (IN)  
Voltage at IN  
VIH  
VIL  
VI  
IIH, IIL  
Leakage current measured at IN  
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the  
propagation delay between the digital control (IN) signal and analog outputs (COM, NC, or NO) signal when the  
switch is turning ON.  
tON  
tOFF  
tBBM  
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the  
propagation delay between the digital control (IN) signal and analog outputs (COM, NC, or NO) signal when the  
switch is turning OFF.  
Break-before-make time. This parameter is measured under the specified range of conditions and by the  
propagation delay between the output of two adjacent analog channels (NC and NO) when the control signal  
changes state.  
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC, NO,  
or COM) output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the  
control input. Charge injection, QC = CL × ΔVO, CL is the load capacitance and ΔVO is the change in analog  
output voltage.  
QC  
10  
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PARAMETER DESCRIPTION (continued)  
SYMBOL  
CNC(OFF)  
CNO(OFF)  
CNC(ON)  
CNO(ON)  
CCOM(ON)  
CI  
DESCRIPTION  
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF  
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF  
Capacitance at the NC port when the corresponding channel (NC to COM) is ON  
Capacitance at the NO port when the corresponding channel (NO to COM) is ON  
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON  
Capacitance of control input (IN)  
OFF isolation of the switch is a measurement OFF-state switch impedance. This is measured in dB in a specific  
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state.  
OISO  
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO  
to NC). This is measured in a specific frequency and in dB.  
XTALK  
BW  
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.  
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio or  
root mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the  
fundamental harmonic.  
THD  
I+  
Static power-supply current with the control (IN) pin at V+ or GND  
PARAMETER MEASUREMENT INFORMATION  
V
+
V
NC  
NO  
NC  
COM  
V
COM  
+
Channel ON  
COM * VNO or VNC  
W
V
NO  
V
r
+
ON  
ICOM  
IN  
I
COM  
V
I
V = V or V  
I
IH  
IL  
+
GND  
Figure 6. ON-State Resistance (rON  
)
V
+
V
NC  
NC  
COM  
V
COM  
+
+
V
NO  
NO  
IN  
OFF-State Leakage Current  
Channel OFF  
V = V or V  
IL  
I
IH  
V
I
+
GND  
Figure 7. OFF-State Leakage Current (INC(OFF), INC(PWROFF), INO(OFF), INO(PWROFF), ICOM(OFF), ICOM(PWROFF)  
)
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PARAMETER MEASUREMENT INFORMATION (continued)  
V
+
V
NC  
NO  
NC  
COM  
V
COM  
+
V
NO  
ON-State Leakage Current  
Channel ON  
V = V or V  
IL  
I
IH  
IN  
V
I
+
GND  
Figure 8. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON)  
)
V
+
V
V
NC  
NO  
NC  
Capacitance  
Meter  
V
= V or GND  
+
BIAS  
NO  
V = V or GND  
I
+
V
COM  
IN  
COM  
Capacitance is measured at NC,  
NO, COM, and IN inputs during  
ON and OFF conditions.  
V
BIAS  
V
I
GND  
Figure 9. Capacitance (CI, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON)  
)
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V
+
TEST  
R
L
C
L
V
COM  
V
NC  
or V  
NC or NO  
NC or NO  
NO  
t
50  
50 Ω  
35 pF  
35 pF  
V
ON  
+
+
COM  
IN  
V
COM  
(2)  
C
L
R
L
t
V
OFF  
V
I
V
0
Logic  
Input  
(V )  
I
+
(2)  
C
L
R
L
50%  
50%  
Logic  
(1)  
GND  
Input  
t
ON  
t
OFF  
Switch  
Output  
90%  
90%  
(V or V  
)
NO  
NC  
A. All input pulses are supplied by generators having the following characteristics: PRR 10 MHz, ZO = 50 , tr < 5 ns,  
tf < 5 ns.  
B. CL includes probe and jig capacitance.  
Figure 10. Turn-On (tON) and Turn-Off Time (tOFF  
)
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V
+
V
0
Logic  
Input  
(V )  
I
+
V
NC  
or V  
NO  
50%  
90%  
NC or NO  
NC or NO  
V
COM  
COM  
Switch  
Output  
90%  
(2)  
C
R
L
L
(V  
)
COM  
IN  
V
I
t
BBM  
Logic  
(1)  
V
or V = V  
NO +  
NC  
GND  
Input  
R = 50  
L
C = 35 pF  
L
A. All input pulses are supplied by generators having the following characteristics: PRR 10 MHz, ZO = 50 , tr < 5 ns,  
tf < 5 ns.  
B. CL includes probe and jig capacitance.  
Figure 11. Break-Before-Make Time (tBBM  
)
V
+
Network Analyzer  
50 W  
V
NC  
NC  
NO  
Channel ON: NC to COM  
V = V or GND  
V
COM  
COM  
I
+
Source  
Signal  
Network Analyzer Setup  
IN  
V
Source Power = 0 dBm  
(632-mV P-P at 50-W load)  
I
50 W  
+
GND  
DC Bias = 350 mV  
Figure 12. Bandwidth (BW)  
14  
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V
+
Network Analyzer  
Channel OFF: NC to COM  
V = V or GND  
50 W  
V
NC  
NC  
I
+
V
COM  
COM  
Source  
Signal  
50 W  
NO  
IN  
Network Analyzer Setup  
Source Power = 0 dBm  
V
I
(632-mV P-P at 50-W load)  
50 W  
+
GND  
DC Bias = 350 mV  
Figure 13. OFF Isolation (OISO  
)
V
+
Network Analyzer  
Channel ON: NC to COM  
Channel OFF: NO to COM  
V = V or GND  
50 W  
V
V
NC  
NC  
V
COM  
I
+
Source  
Signal  
NO  
IN  
NO  
+
Network Analyzer Setup  
50 W  
V
I
50 W  
Source Power = 0 dBm  
(632-mV P-P at 50-W load)  
GND  
DC Bias = 350 mV  
Figure 14. Crosstalk (XTALK  
)
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V
IH  
V
+
Logic  
Input  
(V  
I)  
OFF  
ON  
OFF  
V
IL  
R
GEN  
NC or NO  
NC or NO  
COM  
V
COM  
+
V
COM  
V  
COM  
V
GEN  
(2)  
C
L
V
= 0 to V  
= 0  
GEN  
+
V
I
IN  
R
GEN  
C = 1 nF  
L
Logic  
(1)  
GND  
Q = C × ∆V  
C L COM  
Input  
V = V or V  
IL  
I
IH  
A. All input pulses are supplied by generators having the following characteristics: PRR 10 MHz, ZO = 50 , tr < 5 ns,  
tf < 5 ns.  
B. CL includes probe and jig capacitance.  
Figure 15. Charge Injection (QC)  
V = V or V  
Channel ON: COM to NC  
= V P-P  
R = 600  
I
IH  
IL  
L
V /2  
+
V
f = 20 Hz to 20 kHz  
SOURCE  
C = 50 pF  
L
SOURCE  
+
V
+
Audio Analyzer  
R
L
10 mF  
NO  
NC  
10 mF  
Source  
Signal  
COM  
IN  
(1)  
C
L
600 W  
600 W  
V
I
GND  
600 W  
A. CL includes probe and jig capacitance.  
Figure 16. Total Harmonic Distortion (THD)  
16  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
2-Jul-2008  
PACKAGING INFORMATION  
Orderable Device  
TS5A9411DCKR  
TS5A9411DCKRG4  
TS5A9411DCKT  
Status (1)  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
Drawing  
SC70  
DCK  
6
6
6
6
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
SC70  
SC70  
SC70  
DCK  
DCK  
DCK  
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
TS5A9411DCKTG4  
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and  
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS  
compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is  
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the  
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take  
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI  
to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
2-Jul-2008  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0 (mm)  
B0 (mm)  
K0 (mm)  
P1  
W
Pin1  
Diameter Width  
(mm) W1 (mm)  
(mm) (mm) Quadrant  
TS5A9411DCKR  
TS5A9411DCKT  
SC70  
SC70  
DCK  
DCK  
6
6
3000  
250  
180.0  
180.0  
9.2  
9.2  
2.24  
2.24  
2.34  
2.34  
1.22  
1.22  
4.0  
4.0  
8.0  
8.0  
Q3  
Q3  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
2-Jul-2008  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TS5A9411DCKR  
TS5A9411DCKT  
SC70  
SC70  
DCK  
DCK  
6
6
3000  
250  
202.0  
202.0  
201.0  
201.0  
28.0  
28.0  
Pack Materials-Page 2  
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TI

TS5L100PWE4

QUAD SPDT WIDE-BANDWIDTH LAN SWITCH WITH LOW ON-STATE RESISTANCE
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