TS5A9411_14 [TI]
10-Ω SPDT ANALOG SWITCH SINGLE-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER;![TS5A9411_14](http://pdffile.icpdf.com/pdf1/p00149/img/icpdf/TS5A9_827276_icpdf.jpg)
型号: | TS5A9411_14 |
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描述: | 10-Ω SPDT ANALOG SWITCH SINGLE-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER 光电二极管 |
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TS5A9411
www.ti.com ............................................................................................................................................................... SCDS241A–MAY 2008–REVISED JULY 2008
10-Ω SPDT ANALOG SWITCH
SINGLE-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER
1
FEATURES
APPLICATIONS
•
•
•
•
•
Cell Phones
•
2.25-V to 5.5-V Single-Supply Operation
Communication Systems
Portable Test Equipment
Battery Operated Systems
Sample-and-Hold Circuits
•
Low ON-State Resistance
(10 Ω Max at V+ = 5V)
•
•
•
•
•
Specified Break-Before-Make Switching
Low Power Consumption
TTL/CMOS Compatible Control Input
Low Input/Output Capacitance
DESCRIPTION
The TS5A9411 is a single-pole double-throw (SPDT)
analog switch that is designed to operate from 2.25 V
to 5.5 V. The device offers low ON-state resistance,
Latch-Up Performance Exceeds 100 mA
Per JESD 78, Class II
•
ESD Performance Tested Per JESD
low
leakage,
and
low
power
with
a
break-before-make feature. These features make this
device suitable for portable and battery-powered
applications.
–
2000-V Human-Body Model
(A114-B, Class II)
–
1000-V Charged-Device Model (C101)
•
•
•
Control Inputs Are 5.5-V Tolerant
FUNCTION TABLE
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
NC TO COM,
COM TO NC
NO TO COM,
COM TO NO
IN
L
ON
OFF
ON
DCK PACKAGE
(TOP VIEW)
H
OFF
6
5
NO
1
2
3
IN
V
+
COM
NC
4
GND
ORDERING INFORMATION
TA
–40°C to 85°C
PACKAGE(1)(2)
SOT (SC-70) – DCK
ORDERABLE PART NUMBER
Tape and reel TS5A9411DCKR
TOP-SIDE MARKING(3)
32_
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(3) DCK: The actual top-side marking has one additional character that designates the assembly/test site.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2008, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TS5A9411
SCDS241A–MAY 2008–REVISED JULY 2008 ............................................................................................................................................................... www.ti.com
SUMMARY OF CHARACTERISTICS(1)
2:1 Multiplexer/
Configuration
Demultiplexer
(1 × SPDT)
Number of channels
1
5.3 Ω
ON-state resistance (rON
)
ON-state resistance match (ΔrON
ON-state resistance flatness rON(flat)
Turn-on/turn-off time (tON/tOFF
)
0.03 Ω
)
2 Ω
)
9 ns/7 ns
1 ns
Break-before-make time (tBBM
Charge injection (QC)
Bandwidth (BW)
)
12.5 pC
100 MHz
–84 dB at 1 MHz
–85 dB at 1 MHz
0.03%
OFF isolation (OISO
Crosstalk (XTALK
)
)
Total harmonic distortion (THD)
Leakage current (INO(OFF)/INC(OFF)
Power-supply current (I+)
Package options
)
±3 nA
0.01 µA
6-pin DCK
(1) V+ = 5 V, TA = 25°C
ABSOLUTE MINIMUM AND MAXIMUM RATINGS(1)(2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
V+
Supply voltage range(3)
–0.3
6
V
VNO
VNC
Analog voltage range(3)(4)(5)
–0.3 V+ + 0.3
–50
V
VCOM
IK
Analog port diode current
On-state switch current
VNC, VNO, VCOM < 0
VNO, VNC, VCOM = 0 to V+
mA
mA
INO
INC
ICOM
–50
50
On-state peak switch current(6)
–200
200
VI
Digital input voltage range(3)(4)
Digital input clamp current
–0.5 V+ + 0.3
V
IIK
VI < 0
–50
100
mA
mA
mA
°C
I+
Continuous current through V+
Continuous current through GND
Storage temperature range
IGND
Tstg
–100
–65
150
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 5.5 V maximum.
(6) Pulse at 1-ms duration < 10% duty cycle
THERMAL IMPEDANCE RATINGS
UNIT
θJA
Package thermal impedance(1)
DCK package
259
°C/W
(1) The package thermal impedance is calculated in accordance with JESD 51-7.
2
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TS5A9411
www.ti.com ............................................................................................................................................................... SCDS241A–MAY 2008–REVISED JULY 2008
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY(1)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
Analog signal
range
VCOM
VNO, VNC
,
0
V+
V
25°C
Full
5.3
9
10
ON-state
resistance
VNO or VNC = 3 V,
ICOM = –10 mA,
Switch ON,
See Figure 6
rON
4.5 V
4.5 V
Ω
ON-state
resistance
match
between
channels
25°C
0.03
0.3
VNO or VNC = 3 V,
ICOM = –10 mA,
Switch ON,
See Figure 6
ΔrON
Ω
Full
0.3
ON-state
resistance
flatness
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –10 mA,
Switch ON,
See Figure 6
rON(flat)
25°C
25°C
4.5 V
5.5 V
2
Ω
VNC or VNO = 1 V,
VCOM = 1 V to 4.5 V,
or
VNC or VNO = 4.5 V,
VCOM = 1 V,
–500
–3
500 pA
nA
500 pA
nA
500 pA
NC, NO
OFF leakage
current
INC(OFF)
INO(OFF)
,
Switch OFF,
See Figure 7
Full
3
VNC or VNO = 1 V,
VCOM = 1 V
VNC or VNO = 4.5 V,
VCOM = 4.5 V,
25°C
Full
–500
–3
NC, NO
ON leakage
current
INC(ON)
,
Switch ON,
See Figure 8
5.5 V
5.5 V
INO(ON)
3
VNC or VNO = Open,
VCOM = 1 V,
or
VNC or VNO = Open,
VCOM = 4.5 V,
25°C
–500
COM
ON leakage
current
Switch ON,
See Figure 8
ICOM(ON)
Full
–3
3
nA
Digital Input (IN)
Input logic high
Input logic low
4.5 V to 5.5 V
4.5 V
2.4
2
5.5
5.5
VIH
VIL
Full
V
V
Full
25°C
Full
4.5 V to 5.5 V
0
0.8
–0.05
–0.05
0.05
0.05
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
5.5 V
µA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
Copyright © 2008, Texas Instruments Incorporated
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TS5A9411
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ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (continued)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
25°C
Full
5 V
9
ns
10
VCOM = 3 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 10
Turn-on time
Turn-off time
tON
4.5 V to 5.5 V
5 V
25°C
Full
7
ns
VCOM = 3 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 10
tOFF
4.5 V to 5.5 V
7.5
25°C
Full
1
Break-before-
make time
VNC = VNO = 3 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 11
tBBM
QC
5 V
5 V
ns
0.9
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 15
Charge injection
25°C
12.5
3.5
pC
pF
NC, NO
OFF
capacitance
CNC(OFF)
CNO(OFF)
,
VNC or VNO = V+ or GND,
f = 1 MHz,
Switch OFF,
See Figure 9
25°C
5 V
NC, NO
ON capacitance
CNC(ON)
CNO(ON)
,
VNC or VNO = V+ or GND,
f = 1 MHz,
See Figure 9
25°C
25°C
25°C
25°C
25°C
25°C
5 V
5 V
5 V
5 V
5 V
5 V
8.5
8.5
25
pF
pF
COM
ON capacitance
VCOM = V+ or GND,
f = 1 MHz,
Switch ON,
See Figure 9
CCOM(ON)
Digital input
capacitance
VI = V+ or GND,
f = 1 MHz,
CI
See Figure 9
See Figure 12
pF
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
BW
100
–84
–85
MHz
dB
RL = 50 Ω, CL = 5 pF,
f = 1 MHz,
Switch OFF,
See Figure 13
OISO
XTALK
RL = 50 Ω, CL = 5 pF,
f = 1 MHz,
Switch ON,
See Figure 14
dB
f = 20 Hz to 20
kHz,
See Figure 16
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
THD
25°C
5 V
0.03
0.01
%
Supply
25°C
Full
Positive supply
current
Switch ON or
OFF
I+
VI = V+ or GND,
5.5 V
µA
0.5
4
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www.ti.com ............................................................................................................................................................... SCDS241A–MAY 2008–REVISED JULY 2008
ELECTRICAL CHARACTERISTICS FOR 3-V SUPPLY(1)
V+ = 2.7 V to 3.3 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
Analog signal
range
VCOM
VNO, VNC
,
0
V+
V
25°C
Full
11.5
0.05
15
20
ON-state
resistance
VNO or VNC = 1.5 V,
ICOM = –10 mA,
Switch ON,
See Figure 6
rON
2.7 V
2.7 V
Ω
ON-state
resistance
match
between
channels
25°C
0.3
VNO or VNC = 1.5 V,
ICOM = –10 mA,
Switch ON,
See Figure 6
ΔrON
Ω
Full
0.3
ON-state
resistance
flatness
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –10 mA,
Switch ON,
See Figure 6
rON(flat)
25°C
25°C
3 V
2
Ω
VNC or VNO = 1 V,
VCOM = 1 V to 3 V,
or
VNC or VNO = 3 V,
VCOM = 1 V,
–400
–2
400 pA
nA
400 pA
nA
400 pA
NC, NO
OFF leakage
current
INC(OFF)
INO(OFF)
,
Switch OFF,
See Figure 7
3.3V
Full
2
VNC or VNO = 1 V,
VCOM = 1 V
VNC or VNO = 3 V,
VCOM = 3 V,
25°C
Full
–400
–2
NC, NO
ON leakage
current
INC(ON)
,
Switch ON,
See Figure 8
3.3 V
3.3 V
INO(ON)
2
VNC or VNO = Open,
VCOM = 1 V,
or
VNC or VNO = Open,
VCOM = 3 V,
25°C
–400
COM
ON leakage
current
Switch ON,
See Figure 8
ICOM(ON)
Full
–2
2
nA
Digital Input (IN)
Input logic high
Input logic low
VIH
VIL
Full
Full
2
0
5.5
0.8
V
V
25°C
Full
–0.05
–0.05
0.05
0.05
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
3.6 V
µA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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ELECTRICAL CHARACTERISTICS FOR 3-V SUPPLY (continued)
V+ = 2.7 V to 3.3 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
25°C
Full
3 V
13
ns
15
VCOM = 3 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 10
Turn-on time
Turn-off time
tON
2.7 V to 3.3 V
3.3 V
25°C
Full
7.5
ns
VCOM = 3 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 10
tOFF
2.7 V to 3.3 V
8.5
25°C
Full
1
Break-before-
make time
VNC = VNO = 3 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 11
tBBM
QC
3.3 V
3 V
ns
0.9
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 15
Charge injection
25°C
6
pC
pF
NC, NO
OFF
capacitance
CNC(OFF)
CNO(OFF)
,
VNC or VNO = V+ or GND,
f = 1 MHz,
Switch OFF,
See Figure 9
25°C
3 V
3.5
NC, NO
ON capacitance
CNC(ON)
CNO(ON)
,
VNC or VNO = V+ or GND,
f = 1 MHz,
Switch OFF,
See Figure 9
25°C
25°C
25°C
25°C
25°C
25°C
3 V
3 V
3 V
3 V
3 V
3 V
8.5
8.5
pF
pF
COM
ON capacitance
VCOM = V+ or GND,
f = 1 MHz,
Switch OFF,
See Figure 9
CCOM(ON)
Digital input
capacitance
VI = V+ or GND,
f = 1 MHz,
CI
See Figure 9
See Figure 12
2.5
pF
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
BW
100
–84
–85
MHz
dB
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 13
OISO
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 14
dB
f = 20 Hz to 20
kHz,
See Figure 16
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
THD
25°C
3 V
0.09
0.01
%
Supply
25°C
Full
Positive supply
current
Switch ON or
OFF
I+
VI = V+ or GND,
3.6 V
µA
0.5
6
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www.ti.com ............................................................................................................................................................... SCDS241A–MAY 2008–REVISED JULY 2008
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY(1)
V+ = 2.25 V to 2.75, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
Analog signal
range
VCOM
VNO, VNC
,
0
V+
V
25°C
Full
15
25
28
ON-state
resistance
VNO or VNC = 1 V,
ICOM = –10 mA,
Switch ON,
See Figure 6
rON
2.25 V
2.25 V
Ω
ON-state
resistance
match
between
channels
25°C
0.06
0.3
VNO or VNC = 1 V,
ICOM = –10 mA,
Switch ON,
See Figure 6
ΔrON
Ω
Full
0.3
ON-state
resistance
flatness
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –10 mA,
Switch ON,
See Figure 6
rON(flat)
25°C
25°C
2.25 V
2.75 V
4
Ω
VNC or VNO = 1.5 V,
VCOM = 0.5 V to 1.5 V,
or
VNC or VNO = 1.5 V,
VCOM = 1.5 V,
–300
–1
300 pA
nA
300 pA
nA
300 pA
NC, NO
OFF leakage
current
INC(OFF)
INO(OFF)
,
Switch OFF,
See Figure 7
Full
1
VNC or VNO = 1.5 V,
VCOM = 0.5 V to 1.5 V
VNC or VNO = 1.5 V,
VCOM = 1.5 V,
25°C
Full
–300
–1
NC, NO
ON leakage
current
INC(ON)
,
Switch ON,
See Figure 8
2.75 V
2.75 V
INO(ON)
1
VNC or VNO = Open,
VCOM = 0.5 V,
or
VNC or VNO = Open,
VCOM = 1.5 V,
25°C
–300
COM
ON leakage
current
Switch ON,
See Figure 8
ICOM(ON)
Full
–1
1
nA
Digital Input (IN)
Input logic high
Input logic low
VIH
VIL
Full
Full
2
0
5.5
0.4
V
V
25°C
Full
–0.05
–0.05
0.05
0.05
Input leakage
current
IIH, IIL
VI = 5.5 V or 0 V
2.75 V
µA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued)
V+ = 2.25 V to 2.75, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX UNIT
25°C
Full
2.5 V
18
VCOM = 2 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 10
Turn-on time
Turn-off time
tON
ns
20
2.25 V to
2.75 V
25°C
Full
2.5 V
8
VCOM = 2 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 10
tOFF
ns
2.25 V to
2.75 V
9.5
25°C
Full
1
Break-before-
make time
VNC = VNO = 2 V,
RL = 300 Ω,
CL = 35 pF,
See Figure 11
tBBM
QC
2.5 V
2.5 V
ns
0.9
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 15
Charge injection
25°C
4.5
3.5
pC
NC, NO
OFF
capacitance
CNC(OFF)
CNO(OFF)
,
VNC or VNO = V+ or GND,
f = 1 MHz,
Switch OFF,
See Figure 9
25°C
2.5 V
pF
NC, NO
ON capacitance
CNC(ON)
CNO(ON)
,
VNC or VNO = V+ or GND,
f = 1 MHz,
Switch OFF,
See Figure 9
25°C
25°C
25°C
25°C
25°C
25°C
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
8.5
8.5
pF
pF
COM
ON capacitance
VCOM = V+ or GND,
f = 1 MHz,
Switch OFF,
See Figure 9
CCOM(ON)
Digital input
capacitance
VI = V+ or GND,
f = 1 MHz,
Ci
See Figure 9
See Figure 12
2.5
pF
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
BW
100
–84
–84
MHz
dB
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 13
OISO
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 14
dB
f = 20 Hz to 20
kHz,
See Figure 16
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
THD
I+
25°C
2.5 V
0.15
0.01
%
25°C
Full
Positive supply
current
Switch ON or
OFF
VI = V+ or GND,
2.75 V
µA
0.5
8
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TYPICAL PERFORMANCE
14
15
12
10
V
= 2.5 V
= 3.3 V
+
10
8
5
0
V
+
6
4
-5
V
= 5 V
+
2
-10
-15
0
0
1
2
3
4
5
6
0
5
10
15
20
Figure 1. rON vs VIN
Figure 2. Charge Injection (QC) vs VCOM
20
0
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
INS
-20
-40
-60
-80
CRO
-100
-10
100.00E+3
-120
1.00E+6
10.00E+6
100.00E+6
1.00E+9
100.0E+3
1.0E+6
10.0E+6
100.0E+6
1.0E+9
Frequency (Hz)
Frequency (Hz)
Figure 3. Bandwidth (V+ = 3 V)
Figure 4. OFF Isolation vs Crosstalk (V+ = 3 V)
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
10.0E+0
100.0E+0
1.0E+3
Frequency (Hz)
10.0E+3
100.0E+3
Figure 5. Total Harmonic Distortion vs Frequency
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TS5A9411
SCDS241A–MAY 2008–REVISED JULY 2008 ............................................................................................................................................................... www.ti.com
PIN DESCRIPTION
PIN
NO.
NAME
DESCRIPTION
1
IN
V+
Digital control to connect COM to NO
Power supply
2
3
GND
NC
Digital ground
4
Normally closed
Common
5
COM
NO
6
Normally open
PARAMETER DESCRIPTION
SYMBOL
VCOM
VNC
DESCRIPTION
Voltage at COM
Voltage at NC
Voltage at NO
VNO
rON
Resistance between COM and NC or COM and NO ports when the channel is ON
Difference of ron between channels
ΔrON
rON(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under
worst-case input and output conditions
INC(OFF)
INO(OFF)
INC(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under
worst-case input and output conditions
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the
output (COM) being open
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the
output (COM) being open
INO(ON)
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON
state and the output (NC or NO) being open
ICOM(PWROFF)
Leakage current measured at the COM port during the power-down condition, V+ = 0
Minimum input voltage for logic high for the control input (IN)
Maximum input voltage for logic low for the control input (IN)
Voltage at IN
VIH
VIL
VI
IIH, IIL
Leakage current measured at IN
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the
propagation delay between the digital control (IN) signal and analog outputs (COM, NC, or NO) signal when the
switch is turning ON.
tON
tOFF
tBBM
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the
propagation delay between the digital control (IN) signal and analog outputs (COM, NC, or NO) signal when the
switch is turning OFF.
Break-before-make time. This parameter is measured under the specified range of conditions and by the
propagation delay between the output of two adjacent analog channels (NC and NO) when the control signal
changes state.
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC, NO,
or COM) output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the
control input. Charge injection, QC = CL × ΔVO, CL is the load capacitance and ΔVO is the change in analog
output voltage.
QC
10
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PARAMETER DESCRIPTION (continued)
SYMBOL
CNC(OFF)
CNO(OFF)
CNC(ON)
CNO(ON)
CCOM(ON)
CI
DESCRIPTION
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
Capacitance of control input (IN)
OFF isolation of the switch is a measurement OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state.
OISO
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO
to NC). This is measured in a specific frequency and in dB.
XTALK
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio or
root mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the
fundamental harmonic.
THD
I+
Static power-supply current with the control (IN) pin at V+ or GND
PARAMETER MEASUREMENT INFORMATION
V
+
V
NC
NO
NC
COM
V
COM
+
Channel ON
COM * VNO or VNC
W
V
NO
V
r
+
ON
ICOM
IN
I
COM
V
I
V = V or V
I
IH
IL
+
GND
Figure 6. ON-State Resistance (rON
)
V
+
V
NC
NC
COM
V
COM
+
+
V
NO
NO
IN
OFF-State Leakage Current
Channel OFF
V = V or V
IL
I
IH
V
I
+
GND
Figure 7. OFF-State Leakage Current (INC(OFF), INC(PWROFF), INO(OFF), INO(PWROFF), ICOM(OFF), ICOM(PWROFF)
)
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PARAMETER MEASUREMENT INFORMATION (continued)
V
+
V
NC
NO
NC
COM
V
COM
+
V
NO
ON-State Leakage Current
Channel ON
V = V or V
IL
I
IH
IN
V
I
+
GND
Figure 8. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON)
)
V
+
V
V
NC
NO
NC
Capacitance
Meter
V
= V or GND
+
BIAS
NO
V = V or GND
I
+
V
COM
IN
COM
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
V
BIAS
V
I
GND
Figure 9. Capacitance (CI, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON)
)
12
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TS5A9411
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V
+
TEST
R
L
C
L
V
COM
V
NC
or V
NC or NO
NC or NO
NO
t
50 Ω
50 Ω
35 pF
35 pF
V
ON
+
+
COM
IN
V
COM
(2)
C
L
R
L
t
V
OFF
V
I
V
0
Logic
Input
(V )
I
+
(2)
C
L
R
L
50%
50%
Logic
(1)
GND
Input
t
ON
t
OFF
Switch
Output
90%
90%
(V or V
)
NO
NC
A. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B. CL includes probe and jig capacitance.
Figure 10. Turn-On (tON) and Turn-Off Time (tOFF
)
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V
+
V
0
Logic
Input
(V )
I
+
V
NC
or V
NO
50%
90%
NC or NO
NC or NO
V
COM
COM
Switch
Output
90%
(2)
C
R
L
L
(V
)
COM
IN
V
I
t
BBM
Logic
(1)
V
or V = V
NO +
NC
GND
Input
R = 50 Ω
L
C = 35 pF
L
A. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B. CL includes probe and jig capacitance.
Figure 11. Break-Before-Make Time (tBBM
)
V
+
Network Analyzer
50 W
V
NC
NC
NO
Channel ON: NC to COM
V = V or GND
V
COM
COM
I
+
Source
Signal
Network Analyzer Setup
IN
V
Source Power = 0 dBm
(632-mV P-P at 50-W load)
I
50 W
+
GND
DC Bias = 350 mV
Figure 12. Bandwidth (BW)
14
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V
+
Network Analyzer
Channel OFF: NC to COM
V = V or GND
50 W
V
NC
NC
I
+
V
COM
COM
Source
Signal
50 W
NO
IN
Network Analyzer Setup
Source Power = 0 dBm
V
I
(632-mV P-P at 50-W load)
50 W
+
GND
DC Bias = 350 mV
Figure 13. OFF Isolation (OISO
)
V
+
Network Analyzer
Channel ON: NC to COM
Channel OFF: NO to COM
V = V or GND
50 W
V
V
NC
NC
V
COM
I
+
Source
Signal
NO
IN
NO
+
Network Analyzer Setup
50 W
V
I
50 W
Source Power = 0 dBm
(632-mV P-P at 50-W load)
GND
DC Bias = 350 mV
Figure 14. Crosstalk (XTALK
)
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V
IH
V
+
Logic
Input
(V
I)
OFF
ON
OFF
V
IL
R
GEN
NC or NO
NC or NO
COM
V
COM
+
V
COM
∆V
COM
V
GEN
(2)
C
L
V
= 0 to V
= 0
GEN
+
V
I
IN
R
GEN
C = 1 nF
L
Logic
(1)
GND
Q = C × ∆V
C L COM
Input
V = V or V
IL
I
IH
A. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B. CL includes probe and jig capacitance.
Figure 15. Charge Injection (QC)
V = V or V
Channel ON: COM to NC
= V P-P
R = 600 Ω
I
IH
IL
L
V /2
+
V
f = 20 Hz to 20 kHz
SOURCE
C = 50 pF
L
SOURCE
+
V
+
Audio Analyzer
R
L
10 mF
NO
NC
10 mF
Source
Signal
COM
IN
(1)
C
L
600 W
600 W
V
I
GND
600 W
A. CL includes probe and jig capacitance.
Figure 16. Total Harmonic Distortion (THD)
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PACKAGE OPTION ADDENDUM
www.ti.com
2-Jul-2008
PACKAGING INFORMATION
Orderable Device
TS5A9411DCKR
TS5A9411DCKRG4
TS5A9411DCKT
Status (1)
ACTIVE
ACTIVE
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
SC70
DCK
6
6
6
6
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
SC70
SC70
SC70
DCK
DCK
DCK
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
TS5A9411DCKTG4
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
2-Jul-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0 (mm)
B0 (mm)
K0 (mm)
P1
W
Pin1
Diameter Width
(mm) W1 (mm)
(mm) (mm) Quadrant
TS5A9411DCKR
TS5A9411DCKT
SC70
SC70
DCK
DCK
6
6
3000
250
180.0
180.0
9.2
9.2
2.24
2.24
2.34
2.34
1.22
1.22
4.0
4.0
8.0
8.0
Q3
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
2-Jul-2008
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TS5A9411DCKR
TS5A9411DCKT
SC70
SC70
DCK
DCK
6
6
3000
250
202.0
202.0
201.0
201.0
28.0
28.0
Pack Materials-Page 2
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