TSM36ADBZR [TI]

具有 46V 钳位的 36V、1kV/42Ω TVS 浪涌保护二极管 | DBZ | 3 | -40 to 125;
TSM36ADBZR
型号: TSM36ADBZR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

具有 46V 钳位的 36V、1kV/42Ω TVS 浪涌保护二极管 | DBZ | 3 | -40 to 125

二极管 电视
文件: 总18页 (文件大小:1421K)
中文:  中文翻译
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TSM36A  
ZHCSQN3A JUNE 2022 REVISED OCTOBER 2022  
TSM36A SOT-23 封装的浪涌保护器件  
1 特性  
3 说明  
• 针对工业信号线1.7kV 42ΩIEC 61000-4-5 浪涌  
测试提供单向浪涌保护  
• 强大的浪涌保护  
IEC61000-4-5 (8/20µs)41 A  
• 对于持8/20µs 25A 浪涌电流钳位电压低至  
50 V可保护下游元件  
• 工作电压36V用于保24V 系统中的信号  
1µA 低漏电流  
TSM36A TI 涌保护器件系列的一款产品。  
TSM36A 可将高达 41A IEC 61000-4-5 故障电流可  
靠分流从而保护系统免受高功率瞬态冲击或雷击。该  
器件为满足常见的工业信号线路 EMC 要求提供了解决  
方案可通过 42Ω 电阻进行耦合的方式承受最高 1.7  
kV IEC 61000-4-5 开路电压。TSM36A 在浪涌事件期  
间进行钳制确保系统在 I PP = 25A 时承受低于 50 V  
的电压。  
0.5Ω动态电阻  
此外TSM36A 采用小型引线式 SOT-23 (DBZ) 封  
尺寸大概比业界通SMA 封装50%。器件的漏  
电流和电容都非常低可有效减少保护线路所受影响。  
• 集4 IEC 61000-4-2 ESD 保护  
30kV ESD (IEC 61000-4-2)  
SOT-23 (DBZ) 小型、标准、通用封装  
• 引线式封装用于自动光学检(AOI)  
更多有关浪涌系列其他器件的信息请参阅该链接中的  
产品。  
2 应用  
封装信息(1)  
• 工业传感器  
IO link  
PLC I/O 模块  
24V 电源线或数字输入或输出线  
4/20mA 环路  
电器  
封装尺寸标称值)  
器件型号  
TSM36A  
封装  
DBZSOT-2332.92mm × 1.30mm  
(1) 如需了解所有可用封装请参阅产品说明书末尾的可订购产品  
附录。  
医疗设备  
电机驱动器  
L+  
TSM36A (x6)  
0.1 µF  
(A)  
(A)  
RX  
TX  
1
Application  
(for example  
MCU I/O)  
2
IO Link  
Transceiver  
M12 Connector  
4
CQ  
3
(A)  
L-  
A. 该图所示为两个串联堆叠TSM36A 单向器件阳极背靠背连接从而在各自信号之间实施保护。  
工业传感IO Link 应用  
本文档旨在为方便起见提供有TI 产品中文版本的信息以确认产品的概要。有关适用的官方英文版本的最新信息请访问  
www.ti.com其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前请务必参考最新版本的英文版本。  
English Data Sheet: SLVSGX7  
 
 
 
 
TSM36A  
www.ti.com.cn  
ZHCSQN3A JUNE 2022 REVISED OCTOBER 2022  
Table of Contents  
7.4 Device Functional Modes............................................7  
8 Application and Implementation....................................8  
8.1 Application Information............................................... 8  
8.2 Typical Application...................................................... 8  
9 Power Supply Recommendations..................................9  
10 Layout...........................................................................10  
10.1 Layout Guidelines................................................... 10  
10.2 Layout Example...................................................... 10  
11 Device and Documentation Support.......................... 11  
11.1 Documentation Support...........................................11  
11.2 接收文档更新通知....................................................11  
11.3 支持资源.................................................................. 11  
11.4 Trademarks............................................................. 11  
11.5 Electrostatic Discharge Caution.............................. 11  
11.6 术语表......................................................................11  
12 Mechanical, Packaging, and Orderable  
1 特性................................................................................... 1  
2 应用................................................................................... 1  
3 说明................................................................................... 1  
4 Revision History.............................................................. 2  
5 Pin Configuration and Functions...................................3  
6 Specifications.................................................................. 4  
6.1 Absolute Maximum Ratings........................................ 4  
6.2 ESD RatingsJEDEC Specification...........................4  
6.3 ESD RatingsIEC Specification................................ 4  
6.4 Recommended Operating Conditions.........................4  
6.5 Thermal Information....................................................4  
6.6 Electrical Characteristics.............................................5  
6.7 Typical Characteristics................................................6  
7 Detailed Description........................................................7  
7.1 Overview.....................................................................7  
7.2 Functional Block Diagram...........................................7  
7.3 Feature Description.....................................................7  
Information.................................................................... 11  
4 Revision History  
以前版本的页码可能与当前版本的页码不同  
Changes from Revision * (June 2022) to Revision A (October 2022)  
Page  
• 将数据表的状态从预告信更改为量产数..................................................................................................... 1  
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5 Pin Configuration and Functions  
GND  
GND  
1
2
3
IO  
Not to scale  
5-1. DBZ Package,  
3-Pin SOT-23  
(Top View)  
5-1. Pin Functions  
PIN  
TYPE(1)  
DESCRIPTION  
NAME  
NO.  
IO  
3
I/O  
G
Surge and ESD protected IO  
Connect to ground. To achieve the rated performance, it is required to connect pin 1 and 2  
together on the PCB as close to the device as possible.  
GND  
1, 2  
(1) I = Input, O = Output, I/O = Input or Output, G = Ground, P = Power  
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6 Specifications  
6.1 Absolute Maximum Ratings  
TA = 25°C (unless otherwise noted) (1)  
Parameter  
Device  
MIN  
MAX  
UNIT  
W
Ppk_8_20  
Ipp_8_20  
TA  
IEC 61000-4-5 Power (tp - 8/20 µs)  
IEC 61000-4-5 Current (tp - 8/20 µs)  
Operating free-air temperature  
Junction temperature  
TSM36A  
TSM36A  
2000  
41  
A
150  
150  
155  
°C  
°C  
°C  
55  
55  
65  
TJ  
Tstg  
Storage temperature  
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply  
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If  
used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully  
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.  
6.2 ESD RatingsJEDEC Specification  
Parameter  
VALUE  
UNIT  
Human body model (HBM), per ANSI/ESDA/  
JEDEC JS-001  
± 2500  
V(ESD)  
Electrostatic discharge  
V
Charged device model (CDM), per JEDEC  
specification JS-002  
± 1000  
6.3 ESD RatingsIEC Specification  
TA = 25°C (unless otherwise noted)  
Parameter  
VALUE  
±30000  
±30000  
UNIT  
IEC 61000-4-2 Contact Discharge, all pins  
IEC 61000-4-2 Air-gap Discharge, all pins  
V(ESD)  
Electrostatic discharge  
V
6.4 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
Parameter  
MIN  
0
NOM  
MAX  
UNIT  
V
VIN  
TA  
Input voltage  
36  
Operating free-air temperature  
150  
°C  
55  
6.5 Thermal Information  
TSM36A  
THERMAL METRIC(1)  
DBZ (SOT-23)  
3 PINS  
204.4  
96.9  
UNIT  
RθJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
39.9  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
7.1  
ΨJT  
39.5  
ΨJB  
RθJC(bot)  
N/A  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
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6.6 Electrical Characteristics  
TA = 25°C (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
Device  
MIN  
TYP  
MAX  
UNIT  
VRWM  
VBRF  
Reverse stand-off voltage  
TSM36A  
0
36  
V
Forward breakdown  
voltage(1)  
TSM36A  
TSM36A  
0.8  
V
V
IIO = 10 mA  
Reverse breakdown  
voltage(1)  
VBRR  
IIO = 10 mA  
37.8  
44.2  
IPP = 25A, tp = 8/20 µs, from IO to GND  
IPP = 40 A, tp = 8/20 µs, from IO to GND  
VIO = +36 V  
TSM36A  
TSM36A  
TSM36A  
TSM36A  
TSM36A  
50  
57  
VCLAMP  
Clamping voltage(2)  
V
ILEAK  
Leakage current  
Dynamic resistance  
Line capacitance  
1
μA  
RDYN  
tp = 8/20 µs, from IO to GND  
VIO = 0 V, f = 1 MHz, Vp-p = 30 mV  
0.5  
50  
Ω
CIO-GND  
80  
pF  
(1) VBRF and VBRR are defined as the voltage when ±10 mA is applied in the positive-going direction.  
(2) Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.  
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6.7 Typical Characteristics  
60  
54  
48  
42  
36  
30  
24  
18  
12  
6
80  
72  
64  
56  
48  
40  
32  
24  
16  
8
52  
51.6  
51.2  
50.8  
50.4  
50  
Current  
Voltage  
Frequency = 1MHz, Vpp = 30 mV  
49.6  
49.2  
48.8  
48.4  
48  
0
-10  
0
30  
-5  
0
5
10  
Time (s)  
15  
20  
25  
-25 -20 -15 -10  
-5  
0
5
10  
15  
20  
25  
VR (V)  
6-1. 8/20 μs Surge Response  
6-2. Capacitance vs Bias Voltage  
6-3. Leakage vs Temperature  
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7 Detailed Description  
7.1 Overview  
The TSM36A is a surge protection diode that clamps the voltage during a fault and protects downstream  
components from overvoltage events.  
7.2 Functional Block Diagram  
IO  
3
TSM36A  
1
2
GND  
7.3 Feature Description  
The TSM36A is a surge protection diode that handles 41 A of IEC 61000-4-5 8/20 µs surge current. The low  
clamping voltage protects downstream circuits from being stressed during a surge event. The TSM36A has  
minimal leakage current at the standoff voltage of 36 V, making it a good candidate for applications where low  
leakage is needed to reduce power dissipation. A 30-kV IEC 61000-4-2 rating makes it a robust protection  
solution for ESD events as well. The TSM36A has a wide ambient temperature range of 55°C to +150°C which  
enables it to work in applications requiring an extended temperature range. The small SOT-23 (DBZ) package  
enables it to save board area compared to other surge protection devices in a traditional SMA package. The  
leaded SOT-23 (DBZ) package enables automatic optical inspection during the assembly process.  
7.4 Device Functional Modes  
7.4.1 Protection Specifications  
The TSM36A is specified according to both the IEC 61000-4-5 standard. The IEC 61000-4-5 standard requires  
protection against a pulse with a rise time of 8 µs and a half length of 20 µs.  
Additionally, the TSM36A is tested according to IEC 61000-4-5 to pass a ±1.7 kV surge test through a 42-Ω  
coupling resistor and a 0.5 µF capacitor, which is a common test requirement for industrial signal I/O lines. The  
TSM36A will serve as a protection solution for applications with that requirement.  
The TSM36A integrates 30-kV IEC 61000-4-2 rated ESD protection, which ensures that the device can protect  
against both surge and ESD transient events.  
For more information on TI's test method for surge and ESD testing, reference TI's IEC 61000-4-x Testing  
application note.  
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8 Application and Implementation  
备注  
Information in the following applications sections is not part of the TI component specification, and TI  
does not warrant its accuracy or completeness. TIs customers are responsible for determining  
suitability of components for their purposes, as well as validating and testing their design  
implementation to confirm system functionality.  
8.1 Application Information  
The TSM36A can be used to protect any power, analog, or digital signal from transient fault conditions caused  
by the environment or other electrical components.  
8.2 Typical Application  
L+  
TSM36A (x6)  
0.1 µF  
(A)  
(A)  
RX  
TX  
1
Application  
(for example  
MCU I/O)  
2
M12 Connector  
IO Link  
Transceiver  
4
CQ  
3
(A)  
L-  
A. Diagram shows two TSM36A unidirectional devices stacked in series with the anodes tied back-to-back to protect between the  
respective signals.  
8-1. TSM36A Application Schematic  
8.2.1 Design Requirements  
In the previous example, the TSM36A is protecting an IO Link tranceiver that has a nominal voltage of 24 V and  
a maximum input voltage of 30 V. Most industrial interfaces such as this require protection against ±1 kV surge  
test through a 42-Ω coupling resistor and a 0.5 µF capacitor, equaling approximately 24 A of surge current. If a  
surge event caused by lightning, coupling, ringing, or any other fault condition occurs without any input  
protection, then this input voltage will rise to hundreds of volts in microseconds, which violates the absolute  
maximum input voltage and will harm the device. An ideal surge protection diode will maximize the useable  
voltage range while still clamping at a safe level for the system.  
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8.2.2 Detailed Design Procedure  
If the TSM36A is protecting the device, then during a surge event the voltage will rise to the breakdown of the  
diode at 37.8 V (minimum), the TSM36A will turn on and shunt the surge current to ground. With the low  
dynamic resistance of the TSM36A, large amounts of surge current will have some impact on the clamping  
voltage. The dynamic resistance of the TSM36A is around 0.5 Ω, which means 24 A of surge current will cause  
a voltage rise of 24 A × 0.5 = 12 V. Because the device turns on at 37.8 V (minimum), the IO Link transceiver  
input will be exposed to 37.8 V + 12 V = 49.8 V during surge pulses, which is well within the absolute maximum  
voltage of the IO Link transceiver input pins (L+, L-, and CQ) and will protect the circuit. The small size of the  
device also improves fault protection by lowering the effect of fault current coupling onto neighboring traces. The  
small form factor of the SOT-23 package allows the device to be placed extremely close to the input connector,  
lowering the length of the fault current path through the system compared to larger protection solutions. Finally,  
the low leakage of the TSM36A will have low input power losses. The device will receive a maximum of 1 μA  
leakage at 36 V for a constant power dissipation of 36 μW; a small quantity that will minimally effect overall  
efficiency metrics and heating concerns.  
8.2.3 Configuration Options  
The TSM36A can either be used in an unidirectional or bidirectional configuration. For bidirectional operation,  
place two TSM36A devices in series with reverse orientation, which allows a working voltage of ±36 V. TSM36A  
bidirectional operation is similar to its unidirectional operation, but with a minor increase in breakdown voltage  
and clamping voltage.  
9 Power Supply Recommendations  
This is a passive TVS diode-based surge protection device; therefore, there is no requirement to power it.  
Ensure that the maximum voltage specifications for each pin are not violated.  
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10 Layout  
10.1 Layout Guidelines  
For optimal performance, place the device as close to the connector as possible.  
EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces,  
resulting in early system failures.  
The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away  
from the protected traces which are between the TVS and the connector.  
Route the protected traces as straight as possible.  
Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded  
corners with the largest radii possible.  
Electric fields tend to build up on corners, increasing EMI coupling.  
Pin 1 and 2 are not internally connected. To achieve the rated performance, it is required to connect Pin 1  
and 2 together on the PCB as close to the device as possible and route the signal to ground. Also use a thick  
and short trace for this return path.  
10.2 Layout Example  
The following is a typical example of the layout routing for the TSM36A undirectional device.  
GND  
IO  
GND  
= VIA to GND  
= Top Layer  
= Bottom Layer  
10-1. Routing with DBZ Package  
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11 Device and Documentation Support  
11.1 Documentation Support  
11.1.1 Related Documentation  
For related documentation, see the following:  
Texas Instruments, TI's IEC 61000-4-x Testing application note  
Texas Instruments, ESD Layout Guide user's guide  
Texas Instruments, ESD Protection Diodes EVM user's guide  
Texas Instruments, Generic ESD Evaluation Module user's guide  
Texas Instruments, Reading and Understanding an ESD Protection data sheet  
11.2 接收文档更新通知  
要接收文档更新通知请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册即可每周接收产品信息更  
改摘要。有关更改的详细信息请查看任何已修订文档中包含的修订历史记录。  
11.3 支持资源  
TI E2E支持论坛是工程师的重要参考资料可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解  
答或提出自己的问题可获得所需的快速设计帮助。  
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范并且不一定反映 TI 的观点请参阅  
TI 《使用条款》。  
11.4 Trademarks  
TI E2Eis a trademark of Texas Instruments.  
所有商标均为其各自所有者的财产。  
11.5 Electrostatic Discharge Caution  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled  
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may  
be more susceptible to damage because very small parametric changes could cause the device not to meet its published  
specifications.  
11.6 术语表  
TI 术语表  
本术语表列出并解释了术语、首字母缩略词和定义。  
12 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
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PACKAGE OPTION ADDENDUM  
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18-Jan-2023  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
TSM36ADBZR  
ACTIVE  
SOT-23  
DBZ  
3
3000 RoHS & Green  
NIPDAU  
Level-1-260C-UNLIM  
-40 to 125  
2O98  
Samples  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
12-Nov-2022  
TAPE AND REEL INFORMATION  
REEL DIMENSIONS  
TAPE DIMENSIONS  
K0  
P1  
W
B0  
Reel  
Diameter  
Cavity  
A0  
A0 Dimension designed to accommodate the component width  
B0 Dimension designed to accommodate the component length  
K0 Dimension designed to accommodate the component thickness  
Overall width of the carrier tape  
W
P1 Pitch between successive cavity centers  
Reel Width (W1)  
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  
Sprocket Holes  
Q1 Q2  
Q3 Q4  
Q1 Q2  
Q3 Q4  
User Direction of Feed  
Pocket Quadrants  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TSM36ADBZR  
SOT-23  
DBZ  
3
3000  
180.0  
8.4  
2.9  
3.35  
1.35  
4.0  
8.0  
Q3  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
12-Nov-2022  
TAPE AND REEL BOX DIMENSIONS  
Width (mm)  
H
W
L
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SOT-23 DBZ  
SPQ  
Length (mm) Width (mm) Height (mm)  
210.0 185.0 35.0  
TSM36ADBZR  
3
3000  
Pack Materials-Page 2  
PACKAGE OUTLINE  
DBZ0003A  
SOT-23 - 1.12 mm max height  
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR  
C
2.64  
2.10  
1.12 MAX  
1.4  
1.2  
B
A
0.1 C  
PIN 1  
INDEX AREA  
1
0.95  
(0.125)  
3.04  
2.80  
1.9  
3
(0.15)  
NOTE 4  
2
0.5  
0.3  
3X  
0.10  
0.01  
(0.95)  
TYP  
0.2  
C A B  
0.25  
GAGE PLANE  
0.20  
0.08  
TYP  
0.6  
0.2  
TYP  
SEATING PLANE  
0 -8 TYP  
4214838/D 03/2023  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. Reference JEDEC registration TO-236, except minimum foot length.  
4. Support pin may differ or may not be present.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DBZ0003A  
SOT-23 - 1.12 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
3X (1.3)  
1
3X (0.6)  
SYMM  
3
2X (0.95)  
2
(R0.05) TYP  
(2.1)  
LAND PATTERN EXAMPLE  
SCALE:15X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
0.07 MIN  
ALL AROUND  
0.07 MAX  
ALL AROUND  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4214838/D 03/2023  
NOTES: (continued)  
4. Publication IPC-7351 may have alternate designs.  
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DBZ0003A  
SOT-23 - 1.12 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
3X (1.3)  
1
3X (0.6)  
SYMM  
3
2X(0.95)  
2
(R0.05) TYP  
(2.1)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 THICK STENCIL  
SCALE:15X  
4214838/D 03/2023  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
7. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
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TI“按原样提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,  
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