TUSB212RWBT [TI]

具有直流升压功能的 USB 2.0 高速信号调节器 | RWB | 12 | 0 to 70;
TUSB212RWBT
型号: TUSB212RWBT
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

具有直流升压功能的 USB 2.0 高速信号调节器 | RWB | 12 | 0 to 70

电信 电信集成电路 调节器
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TUSB212  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
TUSB212 USB 2.0 高速信号调节器  
1 特性  
3 说明  
1
USB 2.0OTG 2.0 BC 1.2 兼容  
TUSB212 是一款 USB 高速 (HS) 信号调节器,专为补  
引脚搭接或可通过 I2C 进行配置  
偿传输通道中的 ISI 信号损失而设计。  
支持 LSFS HS 信号传输  
TUSB212 采用了对 USB 低速 (LS) 和全速 (FS) 信号  
无感知的设计,该设计正在申请专利。LS FS 信号  
特征不受 TUSB212 的影响,但该器件会对 HS 信号进  
行补偿。  
超低 USB 断开和关断功耗  
在高损耗应用中通过菊花链设备实现可选信号 增益  
D1P/M D2P/M 可互换且主机/设备不可知  
支持长达 5 米的通道前或 2 米的通道后电缆长度  
借助可编程信号交流升压和直流升压,可精调器件性  
能,从而优化连接器上的高速信号。这有助于通过  
USB 高速电气合规性测试。  
通过外部下拉电阻器实现四种可选交流升压设置  
直流升压与交流升压,可实现最佳信号完整性  
2 应用  
此外,TUSB212 符合 USB On-The-Go (OTG) 和电池  
充电 (BC) 协议。  
笔记本电脑  
台式机  
器件信息 (1)  
扩展坞  
器件型号  
TUSB212  
TUSB212I  
封装  
封装尺寸(标称值)  
平板电脑  
X2QFN (12)  
1.60mm x 1.60mm  
手机  
有源电缆、电缆扩展器  
(1) 如需了解所有可用封装,请参阅产品说明书末尾的可订购产品  
附录。  
背板  
电视  
简化的原理图  
3.3 V  
VCC  
D1  
USB  
Host  
USB  
Connector  
Cable  
D2  
GND  
Copyright © 2017, Texas Instruments Incorporated  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
English Data Sheet: SLLSEX5  
 
 
 
TUSB212  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
www.ti.com.cn  
目录  
7.4 Device Functional Modes.......................................... 8  
Application and Implementation ........................ 10  
8.1 Application Information............................................ 10  
8.2 Typical Application ................................................. 10  
Power Supply Recommendations...................... 17  
1
2
3
4
5
6
特性.......................................................................... 1  
应用.......................................................................... 1  
说明.......................................................................... 1  
修订历史记录 ........................................................... 2  
Pin Configuration and Functions......................... 3  
Specifications......................................................... 4  
6.1 Absolute Maximum Ratings ...................................... 4  
6.2 ESD Ratings.............................................................. 4  
6.3 Recommended Operating Conditions....................... 4  
6.4 Thermal Information.................................................. 4  
6.5 Electrical Characteristics........................................... 5  
6.6 Switching Characteristics.......................................... 6  
6.7 Typical Characteristics.............................................. 7  
Detailed Description .............................................. 8  
7.1 Overview ................................................................... 8  
7.2 Functional Block Diagram ......................................... 8  
7.3 Feature Description................................................... 8  
8
9
10 Layout................................................................... 18  
10.1 Layout Guidelines ................................................. 18  
10.2 Layout Example .................................................... 18  
11 器件和文档支持 ..................................................... 19  
11.1 文档支持 ............................................................... 19  
11.2 接收文档更新通知 ................................................. 19  
11.3 社区资源................................................................ 19  
11.4 ....................................................................... 19  
11.5 静电放电警告......................................................... 19  
11.6 Glossary................................................................ 19  
12 机械、封装和可订购信息....................................... 19  
7
4 修订历史记录  
注:之前版本的页码可能与当前版本有所不同。  
Changes from Original (August 2017) to Revision A  
Page  
Changed Note From: Pull-up resistors for SDA and SCL pins in I2C mode should be 2 kΩ (5%). To: Pull-up resistors  
for SDA and SCL pins in I2C mode should be 4.7 kΩ (5%) in the Pin Functions table.......................................................... 3  
Added Test Conditions to RSTN: VIH and VIL in the Electrical Characteristics table.............................................................. 5  
Added new parameters to SCL/SDA: VIH, VIL, VSDA_OL, ISDA_OL the Electrical Characteristics table ..................................... 5  
Added Test Conditions To: DC_BOOST: VIH, VIM, and VIL the Electrical Characteristics table ............................................. 5  
Added test conditions to trise_dxx and tfall_dxx in the Switching Characteristics table ................................................................. 6  
2
Copyright © 2017, Texas Instruments Incorporated  
TUSB212  
www.ti.com.cn  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
5 Pin Configuration and Functions  
RWB Package  
12 Pin (X2QFN)  
Top View  
D1P D1M  
VCC  
3
4
5
6
12  
SDA  
SCL/CD  
RSTN  
EQ  
2
1
11 VREG  
10 GND  
DC_BOOST/  
ENA_HS  
7
8
9
D2P D2M  
Pin Functions  
PIN  
INTERNAL  
PULLUP/PULLDOWN  
I/O  
DESCRIPTION  
NAME  
D1M  
NO.  
1
I/O  
I/O  
N/A  
N/A  
USB High Speed negative port..  
USB High Speed positive port.  
I2C Mode:  
D1P  
2
Bidirectional I2C data pin [I2C address = 0x2C].  
In non I2C mode:  
Reserved for TI test purpose.  
SDA(1)  
3
4
I/O  
RSTN asserted: 500 kPD  
In I2C mode:  
I2C clock pin [I2C address = 0x2C].  
Non I2C mode:  
After reset: Output CD. Flag indicating that a USB device is attached (connection  
detected). Asserted from an unconnected state upon detection of DP or DM pull-up  
resistor. De-asserted upon detection of disconnect.  
SCL(1)/CD  
I/O  
RSTN asserted: 500 kPD  
Device disable/enable.  
Low – Device is at reset and in shutdown, and  
High – Normal operation.  
RSTN  
EQ  
5
6
I
I
500 kPU  
Recommend 0.1-µF external capacitor to GND to ensure clean power on reset if not  
driven.  
If the pin is driven, it must be held low until the supply voltage for the device reaches  
within specifications.  
USB High Speed AC boost select via external pull down resistor.  
Sampled upon de-assertion of RSTN. Does not recognize real time adjustments.  
Auto selects max AC Boost when left floating.  
N/A  
D2P  
D2M  
7
8
I/O  
I/O  
N/A  
N/A  
USB High Speed positive port.  
USB High Speed negative port.  
In I2C mode:  
Reserved for TI test purpose.  
In non-I2C mode:  
At reset: 3-level input signal DC_BOOST. USB High Speed DC signal boost selection.  
H (pin is pulled high) – 80 mV  
M (pin is left floating) – 60 mV  
L (pin is pulled low) – 40 mV  
After reset: Output signal ENA_HS. Flag indicating that channel is in High Speed mode.  
Asserted upon:  
DC_BOOST(2)  
ENA_HS  
/
9
I/O  
1. Detection of USB-IF High Speed test fixture from an unconnected state followed by  
transmission of USB TEST_PACKET pattern.  
2. Squelch detection following USB reset with a successful HS handshake [HS  
handshake is declared to be successful after single chirp J chirp K pair where each chirp  
is within 18 μs – 128 μs].  
GND  
VREG  
VCC  
10  
11  
12  
P
O
P
N/A  
N/A  
N/A  
Ground  
1.8-V LDO output. Only enabled when operating in High Speed mode. Requires 0.1-µF  
external capacitor to GND to stabilize the core.  
Supply power  
(1) Pull-up resistors for SDA and SCL pins in I2C mode should be 4.7 kΩ (5%). If both SDA and SCL are pulled up at reset the device  
enters into I2C mode.  
(2) Pull-down and pull-up (to 3.3 V) resistors for DC_BOOST pins must be between 22 kΩ to 47 kΩ in non I2C mode.  
Copyright © 2017, Texas Instruments Incorporated  
3
TUSB212  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
www.ti.com.cn  
6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature and voltage range (unless otherwise noted)(1)  
MIN  
MAX  
UNIT  
Supply Voltage  
VCC  
-0.3  
3.8  
V
Range  
Voltage Range  
DxP, DxM, RSTN, EQ, SCL, SDA, DC_BOOST, VREG  
on I/O pins  
-0.3  
-65  
3.8  
V
Tstg  
Storage temperature  
150  
°C  
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
6.2 ESD Ratings  
VALUE  
UNIT  
Human body model (HBM), per  
±2000  
ANSI/ESDA/JEDEC JS-001, all pins(1)  
V(ESD)  
Electrostatic discharge  
V
Charged device model (CDM), per JEDEC  
specification JESD22-C101, all pins(2)  
±500  
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
6.3 Recommended Operating Conditions  
over operating free-air temperature and voltage range (unless otherwise noted)  
MIN  
3
NOM  
MAX  
3.6  
70  
UNIT  
V
VCC  
TA  
Supply Voltage  
3.3  
TUSB212  
TUSB212I  
TUSB212  
TUSB212I  
0
°C  
Ambient temperature  
-40  
0
85  
°C  
85  
°C  
TJ  
Junction temperature  
-40  
105  
°C  
6.4 Thermal Information  
TUSB212  
RWB (VQFN)  
12 PINS  
137.4  
THERMAL METRIC(1)  
UNIT  
RθJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
62  
67.2  
ΨJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
1.9  
ΨJB  
67.3  
RθJC(bot)  
N/A  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
4
版权 © 2017, Texas Instruments Incorporated  
TUSB212  
www.ti.com.cn  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
6.5 Electrical Characteristics  
over operating free-air temperature and voltage range (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
POWER  
USB channel = HS mode; 480 Mbps  
traffic; VCC = 3.3V; VCC supply stable;  
DC Boost = 60 mV  
IACTIVE_H  
S
High-speed (HS) active curent  
High-speed idle current  
22  
14  
30  
22  
mA  
mA  
USB channel = HS mode; no traffic; VCC  
= 3.3V; VCC supply stable; DC Boost =  
60 mV  
IIDLE_HS  
ISUSPEND  
_HS  
USB channel = HS suspend mode; VCC  
= 3.3V; VCC supply stable  
High-speed suspend current  
Full/Low speed current  
Disconnect current  
0.55  
0.6  
0.7  
13  
1.5  
1.5  
1.5  
80  
mA  
mA  
mA  
µA  
USB channel = FS mode or LS mode;  
VCC = 3.3V  
IFS_LS  
IDISCONN  
ECT  
Host side application; No device  
attachment; VCC = 3.3V  
RSTN driven low; VCC supply stable; VCC  
= 3.3V  
IRSTN  
Disable current  
Pin fail-safe leakage current for SDA,  
SCL, DC_BOOST, DxP/N, RSTN  
ILKG_FS  
VCC = 0 V; Pin at 3.6 V  
40  
µA  
RSTN  
VIH  
VIL  
High-level input voltage  
Low-level input voltage  
High-level input current  
Low-level input current  
VCC = 3.0V  
VCC = 3.6V  
VIH = 3.6 V  
VIL = 0 V  
2
0
3.6  
0.8  
4
V
V
IIH  
-4  
µA  
µA  
IIL  
-11  
11  
EQ  
AC Boost Level 0  
AC Boost Level 1  
AC Boost Level 2  
AC Boost Level 3  
160  
2
Ω
1.4  
3.7  
6
kΩ  
kΩ  
kΩ  
REQ  
External pull-down resistor on EQ pin.  
3.9  
CD, ENA_HS  
VOH  
High-level output voltage  
IO = -50µA  
IO = 50µA  
2.4  
V
V
VOL  
Low-level output voltage  
0.4  
SCL, SDA  
CI2CBUS  
VIH  
I2C Bus capacitance  
4
2
150  
3.6  
0.8  
0.4  
pF  
V
SDA and SCL input high level voltage  
SDA and SCL input low level voltage  
VCC = 3.0V  
VIL  
VCC = 3.6V  
V
VSDA_OL SDA low level output voltage  
ISDA_OL SDA low level output current  
DC_BOOST  
4.7kpullup to 3.6V; VCC = 3.0V  
VCC = 3.6V  
V
1.1  
2.4  
0
mA  
VIH  
High-level input voltage  
VCC = 3.3V  
VCC = 3.3V  
VCC = 3.3V  
3.6  
0.4  
V
V
V
VIM  
Mid-level input voltage  
Low-level input voltage  
1.6  
2.4  
VIL  
DxP, DxM  
Measured with LCR meter and device  
powered down. 1 MHz sinusoid, 30  
mVpp ripple  
CIO_DXX Capacitance to GND  
pF  
版权 © 2017, Texas Instruments Incorporated  
5
TUSB212  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
www.ti.com.cn  
6.6 Switching Characteristics  
over operating free-air temperature and voltage range (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
480.24  
UNIT  
USB channel = HS mode; 480 Mbps  
traffic; VCC supply stable  
FBR_DXX DxP/M bit rate  
Mbps  
tRISE_DXX DxP/M rise time  
10% - 90%; VCC = 3.6V; Max AC Gain;  
90% - 10%; VCC = 3.6V; Max AC Gain;  
100  
100  
ps  
ps  
tFALL_DXX DxP/M fall time  
tRSTN_PU Minimum width to detect a valid RSTN  
signal assert when the pin is actively  
driven  
VCC = 3.0 V; Refer to 1  
Refer to 1  
20  
µs  
LSE_WIDT  
H
tSTABLE  
VCC stable before RSTN de-assertion  
100  
0.2  
µs  
tVCC_RAM  
P
VCC ramp time  
100  
ms  
tRSTN_PULSE_WIDTH  
RSTN  
VIL(MAX)  
tSTABLE  
VCC(MIN)  
VCC  
1. Power On and Reset Timing  
6
版权 © 2017, Texas Instruments Incorporated  
 
TUSB212  
www.ti.com.cn  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
6.7 Typical Characteristics  
2. USB2.0 HS Eye Diagram, Host far-end with 2m cable  
3. USB 2.0 HS Eye Diagram, Host far-end with 2m cable  
post-channel loss without TUSB212  
post-channel loss with TUSB212  
4. USB2.0 HS Eye Diagram, Host far-end with 5m cable  
5. USB2.0 HS Eye Diagram, Host far-end with 5m cable  
pre-channel loss without TUSB212  
pre-channel loss with TUSB212  
版权 © 2017, Texas Instruments Incorporated  
7
TUSB212  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
www.ti.com.cn  
7 Detailed Description  
7.1 Overview  
The TUSB212 is a USB High-Speed (HS) signal conditioner, designed to compensate for ISI signal loss in a  
transmission channel. TUSB212 has a patent-pending design which is agnostic to USB Low Speed (LS) and Full  
Speed (FS) signals and does not alter their signal characteristics, while HS signals are compensated. In addition,  
the design is compatible with USB On-The-Go (OTG) and Battery Charging (BC) specifications.  
Programmable signal gain through an external resistor permits fine tuning device performance to optimize signals  
helping to pass USB HS electrical compliance tests at the connector. Additional DC boost configurable by three  
level input DC_BOOST helps overcoming the cable losses.  
The footprint of TUSB212 allows a board layout using this device such that it does not break the continuity of the  
DP/DM signal traces. This permits risk free system design of a complete USB channel with flexible use of one or  
multiple TUSB212 devices as needed for optimal signal integrity. This allows system designers to plan for this  
device and use it only if signal integrity analysis and/or lab measurements sow a need. If such a need is not  
warranted, the device can be left unpopulated without any board rework.  
7.2 Functional Block Diagram  
Low and Full  
Speed Bypass  
D1P  
D1M  
D2P  
D2M  
USB  
TRANSCEIVER  
High Speed  
Compensation  
ESD  
PROTECTION  
USB  
CONNECTOR  
CD  
OPTIONAL  
PLD  
Status Flags  
ENA_HS  
7.3 Feature Description  
7.3.1 EQ  
The EQ pin of the TUSB212 is used to configure the AC boost of the device. The four levels are set through  
different values of an external pulldown resistor at this pin.  
7.3.2 DC BOOST  
The DC_BOOST pin of the TUSB212 is a tri-level pin, used to set the DC gain of the device according to 1.  
1. DC Boost Settings  
DC BOOST SETTING VIA PIN STRAP  
DC_BOOST  
DC Boost Setting (mV)  
VIL  
VIM  
VIH  
40  
60  
80  
7.4 Device Functional Modes  
7.4.1 Low Speed (LS) Mode  
TUSB212 automatically detects a LS connection and does not enable signal compensation. CD pin is asserted  
high.  
8
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TUSB212  
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ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
Device Functional Modes (接下页)  
7.4.2 Full Speed (FS) Mode  
TUSB212 automatically detects a FS connection and does not enable signal compensation. CD pin is asserted  
high.  
7.4.3 High Speed (HS) Mode  
TUSB212 automatically detects a HS connection and will enable signal compensation as determined by the  
configuration of the DC_BOOST pin and the external pulldown resistance on its EQ pin. CD pin is asserted high.  
7.4.4 Shutdown Mode  
TUSB212 is disabled when its RSTN pin is asserted low. In shutdown mode the USB channel is still fully  
operational, but there is neither signal compensation nor any indication from the CD pin as to the status of the  
channel.  
7.4.5 I2C Mode  
TUSB213 supports 100 kHz I2C for device configuration, status readback and test purposes. This controller is  
enabled after SCL and SDA pins are sampled high shortly after de-assertion of RSTN. In this mode, the register  
as described in 2 can be accessed by I2C read/write transaction to 7-bit slave address 0x2C. It is necessary to  
set CFG_ACTIVE bit and reset it to zero after making changes to the EQ and DC Boost level registers to restart  
the state machine.  
All registers or fields in 2 which are not specifically mentioned are considered reserved.  
The default value of these reserved registers or fields must not be changed. It is  
suggested to perform a read-modify-write operation to maintain the default value of the  
reserved fields.  
2. Register definition  
Offset  
Bit(s)  
Name  
Type  
Default  
Description  
Sets the level of AC Boost  
000 : Level 0 AC Boost programmed [MIN]  
001 : Level 1 AC Boost programmed  
011 : Level 2 AC Boost programmed  
111 : Level 3 AC Boost programmed [MAX]  
XXX (Sampled from EQ  
pin at reset)  
0x01  
6:4  
ACB_LVL  
RW  
Configuration mode  
0 : Normal mode. State machine enabled.  
1 : Configuration mode: State machine disabled.  
0x03  
0x0E  
0
CFG_ACTIVE  
DCB_LVL  
RW  
RW  
1b  
After reset, if I2C mode is true (SCL and SDA are  
both pulled high) it is maintained until it is cleared  
by an I2C write, but, if I2C mode is not true, it is  
cleared automatically.  
Sets the level of DC Boost  
XXX (Sampled from  
DC_BOOST pin at reset)  
011 : 40mV (DC_Boost = L)  
101 : 60mV (DC_Boost = M, default)  
111 : 80mV (DC_Boost = H)  
2:0  
版权 © 2017, Texas Instruments Incorporated  
9
 
TUSB212  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
www.ti.com.cn  
8 Application and Implementation  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
8.1 Application Information  
The primary purpose of the TUSB212 is to re-store the signal integrity of a USB High Speed channel up to the  
USB receptacle. The loss in signal quality stems from reduced channel bandwidth due to high loss PCB trace  
and other components that contribute a capacitive load. This can cause the channel to fail the USB near end eye  
mask. Proper use of the TUSB212 can help to pass this eye mask.  
A secondary purpose is to use the CD pin of the TUSB212 to control other blocks on the customer platform if so  
desired.  
8.2 Typical Application  
A typical application is shown in 6. In this setup, D2P and D2M face the USB connector while D1P and D1M  
face the USB host. If desired, the orientation may be reversed [that is, D2 faces transceiver and D1 faces  
connector].  
D1M  
D1P  
D2M  
D2P  
USB  
Host or Hub  
Copyright © 2017, Texas Instruments Incorporated  
6. Typical Application  
8.2.1 Design Requirements  
For this design example, use parameters shown in the table below.  
3. Design Parameters  
PARAMETER  
VALUE  
VCC (3.0V to 3.6V)  
I2C support required in system (Yes/No)  
3.3 V  
No  
REQ  
Level  
0 Ω  
0
1
2
3
AC Boost Level 2:  
REQ = 3.83 K  
AC Boost  
1.69 k ±1%  
3.83 k ±1%  
DNI  
10  
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TUSB212  
www.ti.com.cn  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
Typical Application (接下页)  
3. Design Parameters (接下页)  
PARAMETER  
VALUE  
RDC1  
RDC2  
Level  
Mid DC Level:  
RDC1 = DNI  
RDC2 = DNI  
22 kΩ - 47 kΩ  
Do Not Install (DNI)  
DNI  
40 mV Low DC Boost  
60 mV Mid DC Boost  
80 mV High DC Boost  
DC Boost  
DNI  
DNI  
22 kΩ - 47 kΩ  
8.2.2 Detailed Design Procedure  
TUSB212 requires a valid reset signal as described in the power supply recommendations section. The capacitor  
at RSTN pin is not required if a microcontroller drives the RSTN pin according to recommendations.  
VREG pin is the internal LDO output that requires a 0.1-μF external capacitor to GND to stabilize the core.  
The ideal AC/DC Boost setting is dependent upon the signal chain loss characteristics of the target platform. The  
general recommendation is to start with AC Boost level 0, and then increment to AC Boost level 1, etc. when  
needed. Same applies to the DC boost setting where it is recommended to plan for the required pad to change  
boost settings.  
In order for the TUSB212 to recognize any change to the AC or DC boost settings, the RSTN pin must be  
toggled. This is because the EQ and DC_BOOST pins are latched on power up and the pins are ignored  
thereafter.  
Further D1P has to be shorted to D2P and D1M shorted to D2M on the board for correct functionality of the  
device.  
Placement of the device is also dependent on the application goal. 4 summarizes our recommendations.  
4. Platform Placement Guideline  
PLATFORM GOAL  
Pass USB Near End Mask  
SUGGESTED TUSB212 PLACEMENT  
Close to measurement point  
Pass USB Far End Eye Mask  
Close to USB PHY  
Cascade multiple TUSB212 to improve device enumeration  
Midway between each USB interconnect  
版权 © 2017, Texas Instruments Incorporated  
11  
 
TUSB212  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
www.ti.com.cn  
+3.3 V  
100 nF  
1 mF  
REQ  
100 nF  
+3.3 V  
RDC2  
RDC1  
SCL/CD  
VCC  
SDA  
D1P  
D1N  
DCBOOST/ENA_HS  
USB_DP  
USB_DP  
USB_DN  
D2P  
D2M  
USB  
Host or Hub  
USB_DN  
100 nF  
Copyright © 2017, Texas Instruments Incorporated  
D2P must be shorted to D1P on PCB.  
D2N must be shorted to D1N on PCB.  
7. Reference Schematic  
8.2.2.1 Test Procedure to Construct USB High Speed Eye Diagram  
USB-IF certification tests for High Speed eye masks require the mandated use of the  
USB-IF developed test fixtures. These test fixtures do not require the use of oscilloscope  
probes. Instead they use SMA cables. More information can be found at the USB-IF  
Compliance Updates Page. It is located under the ‘Electricals’ section, ID 86 dated March  
2013.  
The following procedure must be followed before using any oscilloscope compliance software to construct a USB  
High Speed Eye Mask:  
8.2.2.1.1 For a Host Side Application  
1. Configure the TUSB212 to the desired AC and DC boost settings.  
2. Power on (or toggle the RSTN pin if already powered on) the TUSB212  
3. Using SMA cables, connect the oscilloscope and the USB-IF host-side test fixture to the TUSB212  
4. Enable the host to transmit USB TEST_PACKET  
5. Execute the oscilloscope USB compliance software.  
6. Repeat the above steps in order to re-test TUSB212 with different AC and DC boost settings.  
12  
版权 © 2017, Texas Instruments Incorporated  
TUSB212  
www.ti.com.cn  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
8.2.2.1.2 For a Device Side Application  
1. Configure the TUSB212 to the desired AC and DC boost settings.  
2. Power on (or toggle the RSTN pin if already powered on) the TUSB212  
3. Connect a USB host, the USB-IF device-side test fixture, and USB device to the TUSB212. Ensure that the  
USB-IF device test fixture is configured to the ‘INIT’ position  
4. Allow the host to enumerate the device  
5. Enable the device to transmit USB TEST_PACKET  
6. Using SMA cables, connect the oscilloscope to the USB-IF device-side test fixture and ensure that the  
device-side test fixture is configured to the ‘TEST’ position.  
7. Execute the oscilloscope USB compliance software.  
8. Repeat the above steps in order to re-test TUSB212 with different AC and DC boost settings.  
版权 © 2017, Texas Instruments Incorporated  
13  
TUSB212  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
www.ti.com.cn  
8.2.3 Application Curves  
TUSB21xEVM  
2m USB A-B Cable  
DP  
Lecroy 25 GHz Scope  
1m SMA to SMA cables  
USB Host  
DM  
USBIF Compliance  
Test Fixture  
8. Eye Diagram Bench Setup  
9. No TUSB212  
14  
版权 © 2017, Texas Instruments Incorporated  
TUSB212  
www.ti.com.cn  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
11. Mid DC Boost, AC Boost Level 0  
10. Low DC Boost, AC Boost Level 0  
13. Low DC Boost, AC Boost Level 1  
12. High DC Boost, AC Boost Level 0  
14. Mid DC Boost, AC Boost Level 1  
15. High DC Boost, AC Boost Level 1  
版权 © 2017, Texas Instruments Incorporated  
15  
TUSB212  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
www.ti.com.cn  
17. Mid DC Boost, AC Boost Level 2  
16. Low DC Boost, AC Boost Level 2  
18. High DC Boost, AC Boost Level 2  
19. Low DC Boost, AC Boost Level 3  
20. Mid DC Boost, AC Boost Level 3  
21. High DC Boost, AC Boost Level 3  
16  
版权 © 2017, Texas Instruments Incorporated  
TUSB212  
www.ti.com.cn  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
9 Power Supply Recommendations  
On power up, the interaction of the RSTN pin and power on ramp could result in digital circuits not being set  
correctly. The device should not be enabled until the power on ramp has settled to 3 V or higher to ensure a  
correct power on reset of the digital circuitry. If RSTN cannot be held low by microcontroller or other circuitry until  
the power on ramp has settled, then an external capacitor from the RSTN pin to GND is required to hold the  
device in the low power reset state.  
The RC time constant should be larger than five times of the power on ramp time (0 to VCC). With a typical  
internal pullup resistance of 500 kΩ, the recommended minimum external capacitance is calculated as:  
[Ramp Time x 5] ÷ [500 kΩ]  
(1)  
版权 © 2017, Texas Instruments Incorporated  
17  
TUSB212  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
www.ti.com.cn  
10 Layout  
10.1 Layout Guidelines  
The USB signal trace must not be broken when placing TUSB212. Thus, even with the TUSB212 powered down,  
or not populated, the USB link is still fully operational. To avoid the need for signal vias, it is highly recommend to  
route the High Speed traces directly underneath the TUSB212 package, as illustrated in the PCB land pattern  
shown in 22.  
Although the land pattern shown below has matched trace width to pad width, optimal impedance control is  
based on the user's own PCB stack-up. It is recommended to maintain 90 differential routing underneath the  
device.  
All dimensions are in millimetres (mm).  
10.2 Layout Example  
22. DP and DM Routing Underneath Device Package  
18  
版权 © 2017, Texas Instruments Incorporated  
 
TUSB212  
www.ti.com.cn  
ZHCSGM7A AUGUST 2017REVISED SEPTEMBER 2017  
11 器件和文档支持  
11.1 文档支持  
11.2 接收文档更新通知  
要接收文档更新通知,请转至 TI.com 上的器件产品文件夹。单击右上角的通知我 进行注册,即可每周接收产品信  
息更改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。  
11.3 社区资源  
下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商按照原样提供。这些内容并不构成 TI 技术规范,  
并且不一定反映 TI 的观点;请参阅 TI 《使用条款》。  
TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在  
e2e.ti.com 中,您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。  
设计支持  
TI 参考设计支持 可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。  
11.4 商标  
E2E is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
11.5 静电放电警告  
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可  
能会损坏集成电路。  
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可  
能会导致器件与其发布的规格不相符。  
11.6 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
12 机械、封装和可订购信息  
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。这些数据如有变更,恕不另行通知  
和修订此文档。如欲获取此产品说明书的浏览器版本,请参阅左侧的导航。  
版权 © 2017, Texas Instruments Incorporated  
19  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
TUSB212IRWBR  
TUSB212IRWBT  
TUSB212RWBR  
TUSB212RWBT  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
X2QFN  
X2QFN  
X2QFN  
X2QFN  
RWB  
RWB  
RWB  
RWB  
12  
12  
12  
12  
3000 RoHS & Green  
250 RoHS & Green  
3000 RoHS & Green  
250 RoHS & Green  
NIPDAU  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
-40 to 85  
-40 to 85  
0 to 70  
22  
22  
22  
22  
NIPDAU  
NIPDAU  
NIPDAU  
0 to 70  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
16-Jun-2023  
TAPE AND REEL INFORMATION  
REEL DIMENSIONS  
TAPE DIMENSIONS  
K0  
P1  
W
B0  
Reel  
Diameter  
Cavity  
A0  
A0 Dimension designed to accommodate the component width  
B0 Dimension designed to accommodate the component length  
K0 Dimension designed to accommodate the component thickness  
Overall width of the carrier tape  
W
P1 Pitch between successive cavity centers  
Reel Width (W1)  
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  
Sprocket Holes  
Q1 Q2  
Q3 Q4  
Q1 Q2  
Q3 Q4  
User Direction of Feed  
Pocket Quadrants  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TUSB212IRWBR  
TUSB212IRWBT  
TUSB212RWBR  
TUSB212RWBT  
X2QFN  
X2QFN  
X2QFN  
X2QFN  
RWB  
RWB  
RWB  
RWB  
12  
12  
12  
12  
3000  
250  
180.0  
180.0  
180.0  
180.0  
9.5  
9.5  
9.5  
9.5  
1.8  
1.8  
1.8  
1.8  
1.8  
1.8  
1.8  
1.8  
0.45  
0.45  
0.45  
0.45  
4.0  
4.0  
4.0  
4.0  
8.0  
8.0  
8.0  
8.0  
Q1  
Q1  
Q1  
Q1  
3000  
250  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
16-Jun-2023  
TAPE AND REEL BOX DIMENSIONS  
Width (mm)  
H
W
L
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TUSB212IRWBR  
TUSB212IRWBT  
TUSB212RWBR  
TUSB212RWBT  
X2QFN  
X2QFN  
X2QFN  
X2QFN  
RWB  
RWB  
RWB  
RWB  
12  
12  
12  
12  
3000  
250  
189.0  
189.0  
189.0  
189.0  
185.0  
185.0  
185.0  
185.0  
36.0  
36.0  
36.0  
36.0  
3000  
250  
Pack Materials-Page 2  
PACKAGE OUTLINE  
RWB0012A  
X2QFN - 0.4 mm max height  
SCALE 6.500  
PLASTIC QUAD FLATPACK - NO LEAD  
1.65  
1.55  
B
A
PIN 1 INDEX AREA  
1.65  
1.55  
C
0.4 MAX  
SEATING PLANE  
0.05 C  
2X 1.2  
SYMM  
(0.13)  
TYP  
0.05  
0.00  
6X 0.4  
3
6
2
1
7
8
SYMM  
2X  
0.4  
0.4  
8X  
0.2  
12  
9
0.25  
0.15  
12X  
0.6  
4X  
0.4  
0.07  
0.05  
C B A  
C
4221631/B 07/2017  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
RWB0012A  
X2QFN - 0.4 mm max height  
PLASTIC QUAD FLATPACK - NO LEAD  
(1.3)  
6X (0.4)  
9
12  
4X (0.7)  
2X (0.4)  
1
8
SYMM  
(1.5)  
7
2
8X (0.5)  
3
6
SYMM  
(R0.05) TYP  
12X (0.2)  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:30X  
0.05 MAX  
ALL AROUND  
0.05 MIN  
ALL AROUND  
METAL  
SOLDER MASK  
OPENING  
EXPOSED METAL  
EXPOSED METAL  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4221631/B 07/2017  
NOTES: (continued)  
3. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271).  
www.ti.com  
EXAMPLE STENCIL DESIGN  
RWB0012A  
X2QFN - 0.4 mm max height  
PLASTIC QUAD FLATPACK - NO LEAD  
(1.3)  
6X (0.4)  
12  
9
4X (0.67)  
2X (0.4)  
1
2
8
SYMM  
(1.5)  
7
8X  
METAL  
8X (0.5)  
3
6
(R0.05) TYP  
SYMM  
12X (0.2)  
SOLDER PASTE EXAMPLE  
BASED ON 0.1 mm THICK STENCIL  
PADS 1,2,7 & 8  
96% PRINTED SOLDER COVERAGE BY AREA  
SCALE:50X  
4221631/B 07/2017  
NOTES: (continued)  
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
www.ti.com  
重要声明和免责声明  
TI“按原样提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,  
不保证没有瑕疵且不做出任何明示或暗示的担保,包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担  
保。  
这些资源可供使用 TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任:(1) 针对您的应用选择合适的 TI 产品,(2) 设计、验  
证并测试您的应用,(3) 确保您的应用满足相应标准以及任何其他功能安全、信息安全、监管或其他要求。  
这些资源如有变更,恕不另行通知。TI 授权您仅可将这些资源用于研发本资源所述的 TI 产品的应用。严禁对这些资源进行其他复制或展示。  
您无权使用任何其他 TI 知识产权或任何第三方知识产权。您应全额赔偿因在这些资源的使用中对 TI 及其代表造成的任何索赔、损害、成  
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TI 提供的产品受 TI 的销售条款ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI 提供这些资源并不会扩展或以其他方式更改  
TI 针对 TI 产品发布的适用的担保或担保免责声明。  
TI 反对并拒绝您可能提出的任何其他或不同的条款。IMPORTANT NOTICE  
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Copyright © 2023,德州仪器 (TI) 公司  

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