UC1611N [TI]
SILICON, RECTIFIER DIODE, PLASTIC, DIP-8;型号: | UC1611N |
厂家: | TEXAS INSTRUMENTS |
描述: | SILICON, RECTIFIER DIODE, PLASTIC, DIP-8 功效 测试 光电二极管 |
文件: | 总8页 (文件大小:169K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ꢀ ꢁꢂ ꢃꢂꢂ
ꢀ ꢁꢄ ꢃꢂꢂ
SLUS338A – JUNE 1993 – REVISED MAY 2001
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FEATURES
DESCRIPTION
D
D
D
D
D
D
D
Matched, Four-Diode Monolithic Array
High Peak Current
This four-diode array is designed for general
purpose use as individual diodes or as a
high-speed, high-current bridge. It is particularly
useful on the outputs of high-speed power
MOSFET drivers where Schottky diodes are
needed to clamp any negative excursions caused
by ringing on the driven line.These diodes are also
ideally suited for use as voltage clamps when
driving inductive loads such as relays and
solenoids, and to provide a path for current
free-wheeling in motor drive applications.The use
of Schottky diode technology features high
efficiency through lowered forward voltage drop
and decreased reverse recovery time.This single
monolithic chip is fabricated in both hermetic
CERDIP and copper-eaded plastic packages.
The UC1611 in ceramic is designed for –55°C to
125°C environments but with reduced peak
current capability: while the UC3611 in plastic has
higher current rating over a 0°C to 70°C ambient
temperature range.
Low-Cost MINIDIP Package
Low-Forward Voltage
Parallelable for Lower V or Higher I
F
F
Fast Recovery Time
Military Temperature Range Available
AVAILABLE OPTIONS
Packaged Devices
T
= T
J
A
SOIC Wide (DW)
UC1611DW
DIL (J)
UC1611J
UC3611J
DIL (N)
UC1611N
UC3611N
–55°C to 125°C
0°C to 70°C
UC3611DW
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Copyright 2001, Texas Instruments Incorporated
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ꢚ ꢞ ꢛ ꢚꢓ ꢔꢨ ꢖꢕ ꢙ ꢡꢡ ꢟꢙ ꢗ ꢙ ꢘ ꢞ ꢚ ꢞ ꢗ ꢛ ꢣ
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1
www.ti.com
ꢀ ꢁꢂꢃ ꢂꢂ
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SLUS338A – JUNE 1993 – REVISED MAY 2001
DW PACKAGE
(TOP VIEW)
J OR N PACKAGE
(TOP VIEW)
†
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Peak inverse voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Diode-to-diode voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 V
Peak forward current
UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
Power dissipation at T = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W
A
Storage temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
stg
Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
†
‡
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Please consult packaging section of data book for thermal limitations and considerations of package.
electrical characteristics, all specifications apply to each individual diode, T = 25°C, T = T ,
J
A
J
(except as noted)
PARAMETER
TEST CONDITIONS
MIN
0.3
TYP
0.4
MAX UNITS
I
I
= 100 mA
= 1 A
0.7
1.2
0.1
1.0
V
V
F
Forward voltage drop
Leakage current
0.9
0.01
0.1
20
F
V
V
= 40 V
= 40 V,
mA
mA
ns
ns
pF
R
T
J
= 100°C
R
Reverse recovery
Forward recovery
Junction capacitance
0.5 A forward to 0.5 A reverse
1 A forward to 1.1 V recovery
40
V
= 5V
100
R
NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes.
2
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ꢀ ꢁꢂ ꢃꢂꢂ
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SLUS338A – JUNE 1993 – REVISED MAY 2001
APPLICATION INFORMATION
REVERSE CURRENT
FORWARD CURRENT
vs
vs
VOLTAGE
VOLTAGE
5.0
1000
500
3.0
2.0
300
200
1.0
0.5
T
= 125 °C
100
50
J
0.3
0.2
°C
T
= –55
°C
0.1
J
30
20
0.05
0.03
0.02
T
= 25
J
10
5
0.01
T
= 25
°C
J
T
= 75 °C
J
0.005
3
2
°C
T
= 125
0.003
0.002
J
0.001
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Forward Voltage – V
0
10
20
30
40
50
Reverse Voltage – V
Figure 1
Figure 2
Figure 3. Clamp Diodes – PWMs and Drivers
3
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SLUS338A – JUNE 1993 – REVISED MAY 2001
APPLICATION INFORMATION
Figure 4. Transformer Coupled Drive Circuits
Figure 5. Linear Regulations
4
www.ti.com
PACKAGE OPTION ADDENDUM
www.ti.com
25-Sep-2013
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
5962-90538012A
ACTIVE
LCCC
FK
20
1
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
5962-
90538012A
UC1611L/
883B
5962-9053801PA
5962-9053801V2A
ACTIVE
ACTIVE
CDIP
JG
FK
8
1
1
TBD
TBD
A42
N / A for Pkg Type
N / A for Pkg Type
-55 to 125
-55 to 125
9053801PA
UC1611
LCCC
20
POST-PLATE
5962-
9053801V2A
UC1611L
QMLV
5962-9053801VPA
ACTIVE
CDIP
JG
8
1
TBD
A42
N / A for Pkg Type
-55 to 125
9053801VPA
UC1611
UC1611J
ACTIVE
ACTIVE
CDIP
CDIP
JG
JG
8
8
1
1
TBD
TBD
A42
A42
N / A for Pkg Type
N / A for Pkg Type
-55 to 125
-55 to 125
UC1611J
UC1611J883B
9053801PA
UC1611
UC1611L883B
ACTIVE
LCCC
FK
20
1
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
5962-
90538012A
UC1611L/
883B
UC3611DW
ACTIVE
ACTIVE
SOIC
SOIC
DW
DW
16
16
40
40
Green (RoHS
& no Sb/Br)
CU NIPDAU
CU NIPDAU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
0 to 70
0 to 70
UC3611DW
UC3611DWG4
Green (RoHS
& no Sb/Br)
UC3611DW
UC3611J
UC3611N
ACTIVE
ACTIVE
CDIP
PDIP
JG
P
8
8
1
TBD
A42
N / A for Pkg Type
N / A for Pkg Type
0 to 70
0 to 70
UC3611J
UC3611N
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
UC3611NG4
ACTIVE
PDIP
P
8
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
N / A for Pkg Type
0 to 70
UC3611N
UC3611Q
OBSOLETE
OBSOLETE
PLCC
PLCC
FN
FN
20
20
TBD
TBD
Call TI
Call TI
Call TI
Call TI
0 to 70
0 to 70
UC3611QTR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
25-Sep-2013
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF UC1611, UC1611-SP, UC3611, UC3611M :
Catalog: UC3611, UC1611, UC3611M, UC3611
•
Military: UC1611
•
Space: UC1611-SP
•
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
•
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com
25-Sep-2013
Military - QML certified for Military and Defense Applications
•
•
Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application
Addendum-Page 3
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