HI80D-103 [TOKEN]
Ultra-Precision High-Power High-Voltage Resistors;
| 型号： | HI80D-103 |
| 厂家： | 
TOKEN ELECTRONICS INDUSTRY CO., LTD. |
| 描述： | Ultra-Precision High-Power High-Voltage Resistors |
| 文件： | 总12页 (文件大小：917K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Version:
November 22, 2017
(HI80)Ultra-Precision
High-Power
High-Voltage Resistors
Token Electronics Industry Co., Ltd.
Web: www.token.com.tw
mailto:rfq@token.com.tw
Taiwan: No.137, Sec. 1, Zhongxing Rd., Wugu District,
New Taipei City, Taiwan, R.O.C. 24872
Tel: +886 2981 0109
Fax: +886 2988 7487
China: 12F, Zhong Xing Industry Bld., Chuang Ye Road,
Nan Shan District, Shen Zhen City,
Guang Dong, China 518054
Tel: +86 755 26055363; Fax: +86 755 26055365
Product Introduction
New ruthenium material, extended ultra-precision high-power high-voltage
resistors (HI80) breakthrough 300W, precision narrowed to 0.1%.
Features :
Thick film sensorless design.
Applications :
Impulse voltage generators,
Arc furnace damping, Energy research,
Pulse modulators, Radar Pulse-forming networks,
Capacitor crowbar circuits, High voltage snubber
circuits,
Wide range of resistance.
Bottom temperature coefficient and high
precision.
Resistance to humidity, heat and electricity.
Long term performance, stable and reliable.
X-ray/imaging equipment, and EMI/lightning
supression.
Token electronic ultra-precision high-power high-voltage
resistor (HI80) family series take advantage of new ultra-fine
ruthenium material, 95% aluminum oxide ceramic rods, and
thick film non-inductive Serpentine Pattern Design. Precision
can be narrowed to ±0.1%, and power breakthrough 300W.
(HI80) featuring heat-resistant, humidity-resistant, resisting
electrical pulse, and stable and reliable long-term performance,
is specifically designed for general purpose industrial high
voltage system applications.
(HI80) family of high-voltage resistors includes conventional high-voltage resistors (HI80D), conventional
miniaturized high-voltage resistors (HI80DS), high-power high-voltage resistors (HI80P), and ultra-precision
high-voltage resistors (HI80T).
Conventional high voltage resistors (HI80D) have a wide resistance range of 200Ω ~ 10GΩ, rated power 2.5W ~
20W, accuracy tolerance F (± 1%), J (± 5%), K (± 10%), the lowest temperature coefficient down to 50ppm on
request, and the standard temperature coefficient of 100ppm.
(HI80DS) All-film conventional miniature high-voltage resistor relative to (hi80d), with small size, higher power
3W ~ 30W, withstand higher voltage, and none-inductance. The temperature coefficient of the lowest can reach
50ppm (25℃ ~105℃), the standard temperature coefficient of 100ppm. Precision Tolerances F (±1%), J (±5%),
K (±10%).
High power high voltage resistors (HI80P) have high rated power 20W ~ 300W, resistance range 1Ω ~ 1GΩ,
precision tolerance D (± 0.5%), F (± 1%), J (± 5%), K (± 10% ), The temperature coefficient of up to 25ppm (on
request), the standard temperature coefficient of 50ppm.
Ultra-precision high-voltage resistor (HI80T) characters 15ppm temperature coefficient, the standard temperature
coefficient is 25ppm, the precision tolerance has B (± 0.1%), D (± 0.5%), F (± 1%), the resistance range 1Ω ~
500MΩ, and the rated power 0.8W ~ 6W to choose from.
Token (HI80) Voltage Resistor series is able to absorb large amounts of energy at high voltage while remaining
non-inductive and heavy load characteristics. The HI80 conforms to the RoHS directives and Lead-free.
Customed design, and tighter tolerances are available on request.
For customed designs, tighter tolerances, non-standard technical requirements, or custom special applications,
please contact our sales for more information or link to Token official website "High Voltage Resistors" to get
more information.
Page: 1/11
HI80D Spec.
Conventional High Voltage Resistor Construction (HI80D)
Membrane
Material (a)
Ruthenium Paste
95% Aluminum
Oxide, Al2O3
Base Material (b)
High Temperature
Silicone Resin
Encapsulating
Material (c)
Specifications & Painted Dimensions (Unit: mm) (HI80D)
Rated power
(W)
Ambient
temperature
(75℃)
Max.
continuous
Oper. Volt
(KV)
Resistance range (Ω)
Dimensions (mm)
Part Number
Min.
Max.
L ±0.5mm E ±3mm D ±0.5mm d ±0.1mm
0.5
2.5
3.7
4.5
5.2
7.5
11
3.0
4.8
6.4
8.0
12.8
16
200
200
250
300
400
500
900
1K2
1K5
2K
1G
1G
15
20
30
28
28
28
28
28
28
28
28
28
5.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
0.8
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
HI80D-15
HI80D-20
HI80D-26
HI80D-32
HI80D-39
HI80D-52
HI80D-78
HI80D-103
HI80D-124
HI80D-154
1G
27
1.5G
1.5G
2.5G
4G
33
39
52
24
78
12
32
6G
103
124
154
15
40
8G
20
45
10G
Conventional High Voltage Resistor Painted Dimensions (Unit: mm) - (HI80D)
Page: 2/11
HI80DS Spec.
Conventional Miniature High Voltage Resistor Construction (HI80DS)
Membrane Material
Ruthenium Paste
(a)
95% Aluminum Oxide,
Al2O3
Base Material (b)
High Temperature
Silicone Resin
Encapsulating
Material (c)
Conventional Miniature Specifications & Painted Dimensions (Unit: mm)
(HI80DS)
Rated power
Resistance range (Ω)
Dimensions (mm)
Max.
continuous
Oper. Volt
(KV)
(W)
Ambient
temperature
(75℃)
Part Number
Min.
Max.
L ±0.5mm E ±3mm D ±0.5mm d ±0.1mm
3
5
4.8
6.4
8.0
12.8
16
200
250
300
400
500
900
1K2
1K5
2K
1G
1G
20.2
26.9
30
30
30
30
30
30
30
30
30
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
8.2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
HI80DS-20
HI80DS-26
HI80DS-32
HI80DS-39
HI80DS-52
HI80DS-78
HI80DS-103
HI80DS-124
HI80DS-154
7
1.5G
1.5G
2.5G
4G
33.0
9
39.5
10
15
20
25
30
52.1
24
77.7
32
6G
102.9
123.7
153.7
40
8G
45
10G
Conventional Miniature Specifications & Painted Dimensions (Unit: mm) - (HI80DS)
Page: 3/11
HI80T Spec.
Conventional High Voltage Resistor Construction (HI80D)
Membrane
Material (a)
Ruthenium Paste
95% Aluminum
Oxide, Al2O3
Base Material (b)
High Temperature
Silicone Resin
Encapsulating
Material (c)
Ultra-Precision High Voltage Resistor Specifications (HI80T)
Max.
Rated power continuous
Resistance
range (Ω)
Part Number
L ±0.5mm
E ±3mm
D ±0.5mm
d ±0.1mm
(W)
Oper. Volt
(KV)
0.8
1.0
1.2
1.5
2
3
1 ~ 500M
1 ~ 500M
1 ~ 500M
1 ~ 500M
1 ~ 500M
1 ~ 500M
1 ~ 500M
1 ~ 500M
1 ~ 500M
20
27
30
30
30
30
30
30
30
30
30
8
8
8
8
8
8
8
8
8
1
1
1
1
1
1
1
1
1
HI80T-20
HI80T-26
HI80T-32
HI80T-39
HI80T-52
HI80T-78
HI80T-103
HI80T-124
HI80T-154
4
5
33
6
39
10
15
20
25
30
52
3
78
4
103
124
154
5
6
Ultra-Precision High Voltage Resistor Unpainted Dimensions (Unit: mm) - (HI80T)
Page: 4/11
HI80P Specifications
High-Power High Voltage Resistor Construction (Unit: mm) (HI80P)
Membrane
Material (a)
Ruthenium Paste
95% Aluminum
Oxide, Al2O3
Base Material (b)
High Temperature
Silicone Resin
Encapsulating
Material (c)
Nickel Plating
Copper
Cap (d)
High-Power High Voltage Resistor Specifications (Unit: mm) (HI80P)
Rated power Max. continuous
Resistance
range (Ω)
Part Number
L ±1mm
E ±1mm D ±0.5mm d ±0.01mm
(W)
Oper. Volt (KV)
20
30
30
30
30
35
60
60
80
1 ~ 1G
1 ~ 1G
1 ~ 1G
1 ~ 1G
1 ~ 1G
1 ~ 1G
1 ~ 1G
1 ~ 1G
116
116
116
130
160
210
260
310
10
10
10
10
10
10
10
10
17
19
21
28
28
28
28
33
M6
M6
M6
M6
M6
M6
M6
M6
HI80P-20
HI80P-30
HI80P-50
HI80P-80
HI80P-100
HI80P-150
HI80P-200
HI80P-300
30
50
80
100
150
200
300
High-Power High Voltage Resistor Dimensions (Unit: mm) - (HI80P)
Page: 5/11
Environmental Characteristics
Technical Characteristics - (HI80)
Insulation
withstand
voltage
Operating
temp.
range
Part
Resistance
Insulation
resistance
TCR @25℃ (-55℃ ~ +105℃)
Tolerance (%)
Number range (Ω)
±100ppm/℃, (±50ppm/℃ on request)
±100ppm/℃, (±50ppm/℃ on request)
±25ppm/℃, (±15ppm/℃ on request)
±50ppm/℃, (±25ppm/℃ on request)
200 ~ 10G ±1% ~ ±10%
200 ~ 10G ±5% ~ ±10%
1 ~ 500M ±0.1% ~ ±1%
HI80D
HI80DS
HI80T
HI80P
-55℃ ~
+225℃
1000VDC
≥ 10GΩ
1 ~ 1G
±0.5% ~ ±10%
Environmental Characteristics - (HI80)
Inspection item
Inspection method
Performance requirement
5 times the rated power, but not more than 1.5 times
the maximum continuous operating voltage, 5
seconds
ΔR ≤ ±(0.2%R + 0.01Ω)
Overload
1000 hours under rated power
40℃, RH ≥ 95%, 240h
ΔR ≤ ±(0.5%R + 0.01Ω)
ΔR ≤ ±(0.4%R + 0.01Ω)
ΔR ≤ ±(0.2%R + 0.01Ω)
Load life
Steady-state damp heat
Temperature shock
-65℃ ~ 155℃, 5 cycle
Page: 6/11
Power Derating Curve
Power Derating Curve - (HI80)
Power Derating Curve - (HI80DS)
Page: 7/11
Serpentine Pattern
Advance Technique of Non-Inductive & Serpentine Pattern (HI80)
Non-Inductive Performance:
HI80 Non-Inductive Design which uses a serpentine resistive pattern
that offers for zigzagging lines to carry current in opposite directions,
thereby achieving maximum neutralization of flux fields over the
entire length of the resistor.
This efficient non-inductive construction without derating of any
performance advantages is ideal for applications where high
frequency is required.
Serpentine Pattern Screen Printing Design:
Type High Voltage HI80 Precision Resistors combine Token's Non-Inductive serpentine pattern, high
thru-put screen printed silicone coating.
The alignment of the gap in the serpentine resistor pattern with the gap in the coating pattern provides a
complete encapsulation of the resistor element.
The cap and lead assemblies are pressed onto the resistor core, finishing the resistor and providing rugged
terminal attachment.
Page: 8/11
Order Codes
Order Codes (HI80D) Conventional High Voltage Resistor
HI80D
39
1G
F
Part Number
HI80D
Rated Power (W)
Resistance Value (Ω)
Resistance Tolerance (%)
20
2.5W
3.7W
5.2W
12W
20W
1K1
1.1KΩ
110KΩ
1.1MΩ
110MΩ
1.5GΩ
10GΩ
F
J
±1%
±5%
26
39
110K
1M1
110M
1G5
K
±10%
103
154
10G
Note: TCR 100ppm/℃, (±50ppm/℃ on request).
Order Codes (HI80DS) Conventional Miniature high voltage resistors
HI80DS
124
1G
F
Part Number
HI80DS
Rated Power (W)
Resistance Value (Ω)
Resistance Tolerance (%)
20
3W
7W
1K1
1.1KΩ
110KΩ
1.1MΩ
110MΩ
1.5GΩ
10GΩ
J
±5%
32
78
110K
1M1
110M
1G5
K
±10%
15W
20W
30W
103
154
10G
Note: TCR 100ppm/℃, (±50ppm/℃ on request).
Order Codes (HI80T) Ultra-Precision High Voltage Resistor
HI80T
32
500M
B
Part Number
HI80T
Rated Power (W)
Resistance Value (Ω)
Resistance Tolerance (%)
20
0.8W
1.2W
2W
10
10Ω
B
D
F
±0.1%
±0.5%
±1%
32
52
1K1
1.1KΩ
110KΩ
1.1MΩ
500MΩ
110K
1M1
500M
154
6W
Note: TCR ±25ppm/℃, (±15ppm/℃ on request).
Page: 9/11
Order Codes (HI80P) High-Power High Voltage Resistor
HI80P
20
a
1G
F
Part Number
HI80P
Rated Power (W)
Type
Resistance Value
Resistance
Tolerance (%)
(Ω)
20
30
20W
30W
a
b
c
10
10Ω
D
±0.5%
±1%
1K1
1.1KΩ
110KΩ
1.1MΩ
110MΩ
10GΩ
F
J
150
300
150W
300W
110K
1M1
110M
10G
±5%
K
±10%
Note: TCR ±50ppm/℃, (±25ppm/℃ on request).
Page: 10/11
General Information
Cost Effective Complete Selection of High Voltage Components
Token high voltage series can be specified for use in industrial and general purpose high voltage systems,
as well as a complete selection of high resistance, Hi-Meg, high-voltage, high frequency, and bulk
ceramic resistors for higher average power dissipation. These High Resistance, High Frequency, High
Resistance resistors combine the proven performance of Token resistance system with new cost efficient
design elements and high voltage applications.
Detailed specifications, both mechanical and electrical, please contact our sales representative for more
information.
High Voltage Applications
Resistors produced from Serpentine Pattern Screen Printing Design or bulk ceramic materials have
displayed several key advantages in demanding high-voltage situations, including both continuous-wave
and pulse applications. These include radar and broadcast transmitters, x-ray systems, defibrillators,
lasers, and high-voltage semiconductor process equipment applications, where resistors must handle
peak voltage anywhere from 8KV to 75KV.
Typical applications include current limit in capacitor charge/discharge, crowbar, and tube-arc circuits.
In these uses, bulk ceramic resistors provide low inductance, high average power per unit size, stability
at high voltage, and durability at extreme peak-power levels. Film resistors typically cannot withstand
high-voltage pulse applications.
RF/Digital Loads and High-Frequency Applications
Token Non-Inductive Voltage Resistors are used extensively for high-frequency RF loads in broadcast
and communication equipment because of their non-inductive characteristics. They provide excellent
non-inductive power-handling capacity at frequencies up to the gigahertz range, with no sacrifice in
power dissipation.
Film resistors may provide the needed non-inductive characteristics required by such RF applications,
but they have size limitations and present reliability problems due to potential film burnout. This is
especially true in advanced digital applications such as digital radio and TV transmitters involving
pulses at high frequencies.
Application Notes
Due to the high voltage which can appear between the end cap and any adjacent metal part, resistors
should be mounted at an adequate distance from other conductors.
An appropriate number of resistors may be screwed together as a stick to provide an assembly which
will be capable to withstanding any desired voltage, providing no individual resistor is subject to a
greater stress or power dissipation than is recommended in its data sheet, and that appropriate
anticorona devices are fitted.
The axial termination should not be bent closer than twice the diameter of the terminal wire from the
body of the resistor.
When resistors are required to be potted, the preferred encapsulant is a silicone compound.
Oil Immersion
For some high voltage applications it is required to immerse the components in oil or gas to reduce the
effects of corona and surface tracking. A special lacquer protected version of the resistor is available,
suitable for immersion in transformer oil or SF6.
Page: 11/11
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