RI820.125WC470MG [TOKEN]
RI82 Thick Film High Voltage Resistors; RI82厚膜高压电阻
| 型号： | RI820.125WC470MG |
| 厂家： | 
TOKEN ELECTRONICS INDUSTRY CO., LTD. |
| 描述： | RI82 Thick Film High Voltage Resistors |
| 文件： | 总4页 (文件大小：374K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RI82 Thick Film High Voltage Resistors
TOKEN
Thick Film
High Voltage Resistors
An Excellent Solution for The Voltage Trend
in Power Impulse Products
Preview
The High Voltage RI82 Precision Series provides an excellent
solution for design engineers looking for a compact product
with high-voltage capabilities to enable them to design within
the voltage trend for power impulse products.
The RI82 resistors use Token’s proprietary thick film Metal
Glaze resistive element and Serpentine Pattern Design which
provides ideal cost efficient, stability, precision,
non-Inductive, and high voltage characteristics for a wide
range of measurement, voltage divider circuits, and control
functions in high voltage power electronics applications.
By utilizing specific 96 % pure alumina materials with optimum processing, Token are able to control, very
tightly in manufacturing, the important ultra-stable performance tolerance F(±1%), G(±2%), J(±5%), K(±10%),
and M(±20%). Voltage handle up to 30 KV. This unique process is offered in specific resistance values in a wide
variety of sizes and terminations. The extraordinary operating stability of the Type RI82 resistors will improve
the performance of your high voltage system in precision.
The Precision RI82 High Voltage Series is RoHS compliant and lead free. For customed designs, tighter
tolerances, non-standard technical requirements, or custom special applications, please contact our sales for more
information.
Applications
Applications
- Rated Wattage from 0.1W to 30W
- Resistive Element: Thick film
- Max Working Voltage from 2KV to 30KV.
- Substrate: 96 % pure alumina
- Designs built from customer supplied schematics
- Tough epoxy-based coating and high voltage stability
- Encapsulation: Epoxy base,
conformal coating (c style only)
- Temperature Coefficient: 200 ppm/°C to 300 ppm/°C.
- Terminals: Silver palladium pole,
- Resistance Range from 10 Megohm to 1KK Megohms
tin plated copper leads
(1 Gegaohms).
- Resistance Tolerance F(±1%), G(±2%), J(±5%), K(±10%),
and M(±20%).
- Stable cermet resistive element bonded to a high-purity alumina substrate.
Features
- X-ray/imaging equipment, Impulse voltage generators,
- Capacitor crowbar circuits, High voltage snubber circuits, Arc furnace damping,
- Pulse modulators, Radar Pulse-forming networks, Energy research, and EMI/lightning supression.
- Applications include power supplies, transformers and any application requiring operation within an
environment where high voltages are used.
01 of 04
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RI82 Thick Film High Voltage Resistors
TOKEN
CHIP Type General Specifications (Unit:mm)
L max
H max
Silver Palladium Pole
Resistent Film
Insulation Coating
96%A1023 Ceramic Base
Rated
Wattage Style
Resistance
Range
Temp
Coefficient
(10-6/ °C)
Max Working
Voltage
Dimensions
Lmax Smax Hmax I dmax
Part
Number
Resistance
Tolerance
(w)
(MΩ)
(KV)
RI82-2
RI82-2
2
2
a
a
33
25
8
0.8
0.8
J(±5%)
K(±10%)
M(±20%)
10-1000
≤200
15
10
Remark : Rated Continus Working Voltage (RCWW) shall be determined from RCWW = Power Rating × Resistance Value(Ω)
or Max.Working voltage listed above , whichever two.
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Version 2010
02 of 04
RI82 Thick Film High Voltage Resistors
TOKEN
Dip Type General Specification (Unit:mm)
L max
H max
Silver Palladium Pole
Resistent Film
Insulation Coating (c style only)
96%A1023 Ceramic Base
D max
Dimensions
Max
Rated
Part
Resistance
Range
Temp
Coefficient
(10-6/ °C)
Working Resistance
Voltage Tolerance
(KV)
Wattage
Number
H
max
D
max
(w)
(MΩ)
L ± 2 S ± 2
I
RI82-0.125
RI82-0.125
RI82-0.25S
RI82-0.25
RI82-0.25
RI82-0.5
RI82-0.5
RI82-1
0.125
0.125
0.25S
0.25
0.25
0.5
0.5
1
8
10
10
22
25
35
41
25
30
33
38
38
45
50
30
60
80
97
100
100
3.5
5
2.5 20.0min 0.56 100-4.7K
2.5 24.0min 0.56 100-10K
2.5 20.0min 0.56 10-1000
2.5 20.0min 0.56 100-10K
2.5 20.0min 0.56 100-10K
2.5 24.0max 0.56 100-10K
2.5 42.0max 0.56 100-1KK
2.5 30.0max 0.56 100-10K
2.5 30.0max 0.56 100-10K
2.5 35.0max 0.56 100-10K
≤200
≤200
≤200
≤200
≤200
≤200
≤200
≤200
≤200
≤200
≤200
≤200
≤200
≤200
≤200
≤300
≤300
≤300
≤300
≤300
4
4
5
4
4
4
5
10
15
5
5
4
F(±1%)
G(±2%)
J(±5%)
10
8
15
15
15
20
20
20
20
25
25
25
30
30
30
RI82-1
1
RI82-1
1
8
RI82-1
1
10
10
10
10
15
10
20
23
35
48
3
3
3
3
3
3
4
4
4
4
45.0max 0.80 10-1000
40.0max 0.80 100-10K
45.0max 0.80 100-10K
45.0max 0.80 100-10K
35.0max 0.80 100-10K
55.0max 0.80 100-100K
60.0max 0.80 100-200
80.0max 0.80 100-200
RI82-2
2
K(±10%)
M(±20%)
RI82-2
2
RI82-3
2
RI82-3
3
RI82-3
3
RI82-5
5
RI82-10
RI82-20
RI82-30
10
20
30
80.0max
80.0max
1
1
100-200
100-200
Remark : Rated Continus Working Voltage (RCWW) shall be determined from RCWW = Power Rating × Resistance Value(Ω)
or Max.Working voltage listed above , whichever two.
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03 of 04
RI82 Thick Film High Voltage Resistors
TOKEN
RI82 Non-Inductive & Serpentine Pattern - Advance Technique
Non-Inductive Performance:
1. Token’s RI82 Non-Inductive Design which uses a serpentine resistive pattern that offers for zigzag-
ging lines to carry current in opposite directions, thereby neutralizing maximum of flux fields over the
entire length of the resistor.
2. This efficient non-inductive construction retains performance advantages and heavy load characteris-
tics which is ideal for high frequency applications.
Serpentine Pattern Screen Printing Design:
1. Type RI82 Precision High Voltage Resistors combine Token’s Non-Inductive serpentine pattern, high
thru-put screen printed silicone coating.
2. The alignment of the gap in the serpentine resistor pattern with the gap in the coating pattern provides
a complete encapsulation of the resistor element.
3. The lead assemblies are pressed onto the resistor core, finishing the resistor and providing rugged
terminal attachment.
How to Order
RI82
0.125W
c
47M
K
Resistance Tolerance
Part Number: RI82
Code
F
Resistance Tolerance
Rated Power (W): 0.125W, 0.25W, 0.5W, 1W
Style: a Style, b Style, c Style
Resistance Value (Ω)
±1%
±2%
G
J
±5%
Code
4M7
Resistance Value (Ω)
4.7MΩ
K
±10%
±20%
M
47M
47MΩ
47M5
470M
47.5MΩ
470MΩ
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Version 2010
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