KV1700STL [TOKO]
Variable Capacitance Diode, 74.5pF C(T), 12V, Silicon, SOT-23, 3 PIN;
| 型号： | KV1700STL |
| 厂家： | 
TOKO, INC |
| 描述： | Variable Capacitance Diode, 74.5pF C(T), 12V, Silicon, SOT-23, 3 PIN 光电二极管 |
| 文件： | 总2页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Variable capacitance diode for FM tuning
KFMVチュ1ー7ナ0用0電R圧/可S変容量ダイオード
FEATURES
Included Twin Element
ツインタイプ素子1組搭載
Very Small Tolerance of Element Being Next Device To Each Other 小さい隣接デバイス間容量偏差
Excellent Linearity of The CV Curve
Extra Large Capacitance Ratio: A=2.70 to
Very Small Series Resistance: RS=to 0.3Ω
CV特性の優れた直線性
極めて大きな容量変化比: A=2.70~
小さい直列抵抗: RS=~0.3Ω
CLASSIFICATION
PACKAGE OUTLINE
Rank
Part name
Package Marking Pin configulation
1
2
3
4
5
C
KV1700R
C0
MIN 68.86 70.82 72.80 74.85 76.96
MAX 71.52 73.53 75.61 77.74 79.93
SOT23C-3
SOT23-3
C2
KV1700S
C0
ORDERING INFORMATION
KV1700RTL…Storage direction: TL(Left type)
KV1700STL…Storage direction: TL(Left type)
* Part name + Storage direction
ABSOLUTE MAXIMUM RATINGS
Parameter
項目 Symbol 記号
Rating 定格
Unit 単位 Remarks 備考
Reverse Voltage
Forward Current
Power Dissipation
Storage Temperature Range
逆方向電圧
順方向電流
VR
IF
PD
TSTG
TOP
14
50
V
mA
mW
°C
許容消費電力
保存温度範囲
100
-55 to 150
-55 to +85
Operating Temperature Range 動作温度範囲
°C
ELECTRICAL CHARCTERISTICS
TA=25°C
Conditions
条件
Parameter
Symbol
記号
VR
Units
単位
V
Value 規格
TYP
項目
MIN
MAX
Reverse Voltage
Reverse Current
逆方向電圧
逆方向電流
12
IR=10µA
VR=10V
VR=2V, f=1MHz
VR=8V, f=1MHz
VR=3.0V, f=100MHz
C2/C8
IR
10.0
79.93
27.40
0.30
nA
pF
C2
68.86
23.28
Diode Capacitance
容量値
C8
pF
Ω
Series Resistance
Capacitance Ratio
* Capacitance measured in parallel connections.
直列抵抗
RS
容量変化比
A
2.70
3.20
容量値は、Back to Back Typeの2つのダイオードの平均値です。
* Diode Capactance measured with Agilent 4279A or equivalent instruments ( at OSC level 20±5mVrms )
容量測定器は、Agilent 4279A又は相当品。OSCレベル 20±5mVrms。
* Resistance meter is Agilent 4291B or equivalent instruments.
直列抵抗測定器は、Agilent 4291B又は相当品。
* The tolerance of element that is next to each other in same reel is wihthin 3% at C1, C1 and C1.
同一リール内で隣接する素子のC2、C5、C8の容量偏差は3.0%以内。
2003 FALL
KV1700R/S
SEMICONDUCTOR SELECTION GUIDE
DISCRETE DEVICES
半導体セレクションガイド
個別半導体
TYPICAL PREFORAMNCE CHARACTERISTICS
Capacitance versus Reverse Voltage
Reverse Current versus Reverse Voltage
逆方向電圧対容量
f=1MHz, TA=25°C
逆方向電圧対逆電流
TA=+25 / +55 / +85°C
1000
1n
TA=+85°C
TA=+55°C
100p
10p
1p
TA=+25°C
100
10
100f
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
VR, Reverse Voltage(V)
VR, Reverse Voltage(V)
Q versus Reverse Voltage
Series Resistance versus Frequency
逆方向電圧対Q
TA=25°C
周波数対直列抵抗
VR=1.5V, TA=25°C
f=50MHz
f=70MHz
1000
0.3
f=100MHz
100
0.1
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VR, Reverse Voltage(V)
10M
100M
f, Frequency(Hz)
1G
Capacitance Temperature Coefficient versus Reverse Voltage
C(TA)/C(25°C) versus Reverse Voltage
逆方向電圧対温度係数
f=1MHz, TA=25°C
逆方向電圧対C(TA)/C(25°C) f=1MHz TA=-55 to +85°C
1.04
1.03
1.02
1000
TA=+85°C
1.01
TA=+55°C
1.00
TA=+25°C
TA=-15°C
0.99
TA=-55°C
0.98
0.97
0.96
0.95
100
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VR, Reverse Voltage(V)
VR, Reverse Voltage(V)
2003 FALL
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