XC2164L51VCF [TOREX]

ICs for use with Crystal Oscillators; 集成电路与晶体振荡器的使用


型号：	XC2164L51VCF
厂家：	Torex Semiconductor
描述：	ICs for use with Crystal Oscillators 集成电路与晶体振荡器的使用振荡器晶体振荡器
文件：	总12页 (文件大小：220K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ETR1414_003

■GENERAL DESCRIPTION

The XC2164 series are high frequency, low current consumption CMOS ICs with built-in crystal oscillator and divider circuits.

For fundamental oscillation, output is selectable from any one of the following values for f0: f0/1, f0/2, f0/4, and f0/8.

With oscillation capacitors and a feedback resistor built-in, it is possible to configure a stable fundamental oscillator or 3rd

overtone oscillator using only an external crystal. Also the series has stand-by function built-in and the type, which suspends the

oscillation completely (XC2164A~D type) or the type suspends only an output (XC2164K~N type) are available. The XC2164

series are integrated into SOT-26 packages. The series is also available in chip form.

■FEATURES

■APPLICATIONS

Oscillation Frequency

: 4MHz ~ 30MHz (Fundamental)

20MHz ~ 125MHz (3rd Overtone)

: Selectable from f0/1, f0/2, f0/4,

f0/8 (f0/2, f0/4, f0/8 are

fundamental only)

: 3-State

: 3.3V±10%, 5.0V±10%

: Stand-by function included

Selectable from Chip Enable type

and Output Enable type

●Crystal oscillation modules

●Clocks for micro computer, DSPs

●Communication equipment

●Various system clocks

Divider Ratio

Output

Operating Voltage Range

Low Power Consumption

CMOS

Built-in Oscillation Feedback Resistor

Built- in Oscillation Capacitors Cg, Cd

Packages

: SOT-26, Chip Form (1.3x0.8mm)

■PIN ASSIGNMENT

■PIN CONFIGURATION

PIN NUMBER

PIN NAME

FUNCTION

Clock Output

Q₀

V_SS

Ground

Crystal Oscillator

Connection (Output)

Crystal Oscillator

Connection (Input)

/XT

V_DD

Power Supply

Stand-by Control*

unit [μm]

/INH

*Stand-by control pin has a pull-up resistor built-in.

■/INH, Q₀PIN FUNCTION

/I_NH

Q₀

“H” or OPEN

Clock Output

High impedance

“L”

H = High level

L = Low level

1/12

XC2164 Series

■PAD DIMENSIONS

■PAD LAYOUT FOR CHIP FORM

PAD DIMENSIONS

NAME

PIN NUMBER

Q₀

V_SS

/ XT

514

222

- 450

514

- 264

264

V_DD

/ INH

1.3×0.8mm

XC2164xx1xxT : 280±20μm

XC2164xx1xxF : 200±20μm

264

unit [μm]

_DDLevel

100×100μm

■PRODUCT CLASSIFICATION

●Ordering Information

XC2164 ①②③④⑤⑥

DESIGNATOR

DESCRIPTION

SYMBOL

DESCRIPTION

: Chip Enable: f0/1

: Chip Enable: f0/2 (Fundamental only)

: Chip Enable: f0/4 (Fundamental only)

: Chip Enable: f0/8 (Fundamental only)

: Output Enable: f0/1

Divider Ratio

/INH Pin Function

①

: Output Enable: f0/2 (Fundamental only)

: Output Enable: f0/4 (Fundamental only)

: Output Enable: f0/8 (Fundamental only)

: Not polyimide coating on the chip surface (SOT-26 only)

: Polyimide coating on the chip surface (Chip form only)

: CMOS (V_DD/2) *TTL: Fundamental 4MHz to 30MHz

: 3rd Overtone, built-in type

②

③

④

Chip Surface Treatment

Duty Level

(Table 1)

(Table 2)

Frequency Range & Rf,

Cg, Cd Values

: Fundamental, built-in type

: Chip form

: SOT-26

: Embossed tape, standard feed

: Embossed tape, reverse feed

: Chip tray (Wafer thickness : 280±20μm)

: Chip tray (Wafer thickness : 200±20μm)

⑤

⑥

Packages

Device Orientation

Table 1: 3rd Overtone, Built-In Type

FREQUENCY RANGE

SYMBOL

(kΩ)

(pF)

3.3V ±10%

5.0V ±10%

20MHz to 30MHz

30MHz to 40MHz

40MHz to 50MHz

50MHz to 65MHz

65MHz to 80MHz

80MHz to 95MHz

95MHz to 110MHz

110MHz to 125MHz

－

9.0

6.5

5.0

3.5

2.8

2.5

2.2

2.0

2.3

21.5

20.0

16.0

14.0

12.5

10.0

8.0

21.5

20.0

16.0

14.0

12.5

10.0

8.0

20MHz to 30MHz

30MHz to 40MHz

40MHz to 50MHz

50MHz to 65MHz

65MHz to 80MHz

80MHz to 95MHz

95MHz to 110MHz

110MHz to 125MHz

7.0

5.5

7.0

5.5

Table 2: Fundamental, Built-In Type

FREQUENCY RANGE

（kΩ）

（pF）

SYMBOL

3.3V ±10%

5.0V ±10%

M, V

4MHz to 30MHz

3.5/7.0

20.0

35.0

20.0

35.0

(*)Rf = 3.5MΩ@V_DD= 5.0V Operation

Rf = 7.0 MΩ@V_DD=3.3V Operation

2/12

XC2164

Series

■BLOCK DIAGRAM

■ABSOLUTE MAXIMUM RATINGS

Ta=25℃

PARAMETER

Supply Voltage

SYMBOL

V_DD

CONDITIONS

UNITS

V_SS- 0.3 ~ V_SS+ 7.0

V_SS- 0.3 ~ V_DD+ 0.3

250*

Input Voltage

V_IN

Power Dissipation

Operating Temperature Range

℃

Topr

- 40 ~ + 85

- 65 ~ + 150 (Chip Form)

- 55 ~ + 125 (SOT-26)

℃

Storage Temperature Range

Tstg

℃

** When implemented on a glass epoxy PCB. (SOT-26 package)

3/12

XC2164 Series

■ELECTRICAL CHARACTERISTICS

●DC Electrical Characteristics

XC2164Ax1M, T, V / XC2164Kx1M, T, V (Fundamental)

5.0V operation (unless otherwise stated, VDD=5.0V, No Load, Ta= -30~+80℃)

PARAMETER

SYMBOL

V_DD

CONDITIONS

MIN.

TYP.

5.0

MAX.

5.5

UNITS

Operating Voltage

4.5

"H" Level Input Voltage

"L" Level Input Voltage

"H" Level Output Voltage

"L" Level Output Voltage

V_IH

2.4

V_IL

0.4

V_OH

CMOS: V_DD=4.5V, I_OH= - 16mA

CMOS: V_DD=4.5V, I_OH=16mA

3.9

4.2

0.3

V_OL

0.4

(15)

(8)

XC2164Ax1M, V

/INH=Open,

XC2164Ax1T

Supply Current 1

Supply Current 2

I_DD1

Q₀=Open

XC2164Kx1M, V

f=30MHz

XC2164Kx1T

XC2164Ax1M, V

/INH="L",

μA

(8)

XC2164Ax1T

I_DD2

Q₀=Open

XC2164Kx1M, V

(T.B.D.*) (T.B.D.*)

f=30MHz

XC2164Kx1T

/INH="L"

(14)

2.0

Input Pull-Up Resistance 1

Input Pull-Up Resistance 2

Internal Oscillation

Feedback Resistance

Output Disable

R_UP1

R_UP2

0.5

1.0

MΩ

kΩ

/INH=0.7 V_DD

100

3.5

MΩ

μA

I_OZ

/INH="L"

Leak Current

* T.B.D.: To be determined

XC2164Ax1M, XC2164Kx1M (Fundamental)

3.3V operation (unless otherwise stated, VDD=3.3V, No Load, Ta= -30~+80℃)

PARAMETER

SYMBOL

V_DD

CONDITIONS

MIN.

TYP.

MAX.

3.63

UNITS

Operating Voltage

2.97

3.30

"H" Level Input Voltage

"L" Level Input Voltage

"H" Level Output Voltage

"L" Level Output Voltage

V_IH

2.4

V_IL

2.5

0.4

V_OH

CMOS: V_DD=2.97V, I_OH= - 8mA

CMOS: V_DD=2.97V, I_OH=8mA

V_OL

0.4

(8)

/INH=Open,

Q₀=Open, f=30MHz

/INH="L",

XC2164Ax1M

XC2164Kx1M

XC2164Ax1M

XC2164Kx1M

Supply Current 1

Supply Current 2

I_DD1

I_DD2

(8)

(4)

μA

MΩ

kΩ

Q₀=Open, f=30MHz

(T.B.D.*) (T.B.D.*)

Input Pull-Up Resistance 1

Input Pull-Up Resistance 2

Internal Oscillation

Feedback Resistance

Output Disable

R_UP1

R_UP2

/INH="L"

1.0

2.0

4.0

/INH=0.7 V_DD

140

7.0

MΩ

μA

/INH="L"

Leak Current

* T.B.D.: To be determined

4/12

XC2164

Series

■ELECTRICAL CHARACTERISTICS (Continued)

●DC Electrical Characteristics (Continued)

XC2164Ax1T, V / XC2164Kx1T, V (Fundamental)

3.3V operation (unless otherwise stated, VDD=3.3V, No Load, Ta= -30~+80℃)

PARAMETER

SYMBOL

V_DD

CONDITIONS

MIN.

TYP.

MAX. UNITS

Operating Voltage

2.50

3.30

3.63

"H" Level Input Voltage

"L" Level Input Voltage

"H" Level Output Voltage

"L" Level Output Voltage

V_IH

2.4

V_IL

0.4

V_OH

CMOS: 2.97V, I_OH= - 8mA

CMOS: 2.97V, I_OH=8mA

XC2164Ax1T

2.5

V_OL

0.4

(6.5)

(8)

(6.5)

(8)

(4)

/INH=Open,

XC2164Ax1V

XC2164Kx1T

XC2164Kx1V

XC2164Ax1T

XC2164Ax1V

XC2164Kx1T

XC2164Kx1V

Supply Current 1

Supply Current 2

I_DD1

Q0=Open,

f=30MHz

μA

/INH="L",

Q₀=Open,

f=30MHz

I_DD2

(T.B.D.*) (T.B.D.*)

Input Pull-Up Resistance 1

Input Pull-Up Resistance 2

Internal Oscillation

R_UP1

R_UP2

/INH="L"

1.0

2.0

4.0

MΩ

kΩ

/INH=0.7 V_DD

140

7.0

MΩ

μA

Feedback Resistance

Output Disable

I_OZ

/INH="L"

Leakage Current

* T.B.D.: To be determined

Comparative Chart of Oscillation Frequency vs. Supply Voltage, and Negative Resistance Value

OSCILLATION FREQUENCY vs. SUPPLY VOLTAGE

NEGATIVE RESISTANCE VALUE

SYMBOL

V_DD=3.3V±10%

±4.3ppm

V_DD=5.0V±10%

±4.5ppm

V_DD=3.3V

- 130Ω

- 150Ω

- 660Ω

V_DD=5.0V

- 220Ω

- 250Ω

- 760Ω

±1.2ppm

±2.1ppm

±9.4ppm

±7.0ppm

(The designed value when 30MHz crystal is used.)

5/12

XC2164 Series

■ELECTRICAL CHARACTERISTICS (Continued)

●DC Electrical Characteristics (Continued)

XC2164Ax1A ~ XC2164Ax1K (3rd Overtone)

5.0V Operation (Unless otherwise stated, VDD=5.0V, No Load, Ta= -30~+80℃)

PARAMETER

SYMBOL

VDD

CONDITIONS

MIN. TYP. MAX.

UNITS

Operating Voltage

4.5

5.0

5.5

"H" Level Input Voltage

"L" Level Input Voltage

"H" Level Output Voltage

"L" Level Output Voltage

VIH

2.4

VIL

0.4

VOH

CMOS: 4.5V, I_OH= -16mA

CMOS: 4.5V, I_OH=16mA

3.9

4.2

0.3

17.0

19.0

23.0

24.0

30.0

5.0

1.0

VOL

0.4

(23)

(26)

(32)

(40)

( 8 )

2.0

100

XC2164Ax1A, f0=30MHz

XC2164Ax1B, f0=40MHz

XC2164Ax1C, f0=55MHz

XC2164Ax1D, f0=70MHz

XC2164Ax1E, f0=85MHz

XC2164Ax1F, f0=100MHz

XC2164Ax1H, f0=110MHz

XC2164Ax1K, f0=125MHz

/INH=Open,

Q₀=Open

Supply Current 1

I_DD1

Supply Current 2

I_DD2

R_UP1

R_UP2

/INH="L", Q₀=Open

μA

MΩ

kΩ

Input Pull-Up Resistance 1

Input Pull-Up Resistance 2

/INH="L"

0.5

/INH=0.7 V_DD

XC2164Ax1A

XC2164Ax1B

XC2164Ax1C

XC2164Ax1D

XC2164Ax1E

XC2164Ax1F

XC2164Ax1H

XC2164Ax1K

9.0

6.5

5.0

3.5

2.8

2.5

2.2

2.0

Internal Oscillation

kΩ

Feedback Resistance

Output Disable

Leak Current

I_OZ

/INH="L"

μA

6/12

XC2164

Series

■ELECTRICAL CHARACTERISTICS (Continued)

●DC Electrical Characteristics (Continued)

XC2164Ax1B, C, E, F, H, K, L (3rd Overtone)

3.3V Operation (unless otherwise stated, VDD=3.3V, No Load, Ta= -30~+80℃)

PARAMETER

SYMBOL

V_DD

CONDITIONS

MIN. TYP. MAX. UNITS

Operating Voltage

2.97 3.30 3.63

"H" Level Input Voltage

"L" Level Input Voltage

"H" Level Output Voltage

"L" Level Output Voltage

V_IH

2.4

0.4

V_IL

V_OH

CMOS: 2.97V, I_OH= - 8mA

CMOS: 2.97V, I_OH=8mA

2.5

V_OL

0.4

(7)

(8)

(13)

(15)

XC2164Ax1B, f0=30MHz

4.5

5.0

8.0

8.5

9.5

10.0

10.5

2.0

XC2164Ax1C, f0=40MHz

XC2164Ax1E, f0=70MHz

XC2164Ax1F, f0=85MHz

XC2164Ax1H, f0=100MHz

XC2164Ax1K, f0=110MHz

XC2164Ax1L, f0=125MHz

/INH=Open,

Q₀=Open

Supply Current 1

I_DD1

Supply Current 2

I_DD2

R_UP1

R_UP2

/INH="L", Q₀=Open

μA

MΩ

kΩ

Input Pull-Up Resistance 1

Input Pull-Up Resistance 2

/INH="L"

1.0

4.0

140

/INH=0.7 V_DD

XC2164Ax1B

XC2164Ax1C

XC2164Ax1E

XC2164Ax1F

XC2164Ax1H

XC2164Ax1K

XC2164Ax1L

6.5

5.0

2.8

2.5

2.2

2.0

2.3

Internal Oscillation

kΩ

Feedback Resistance

Output Disable

Leak Current

I_OZ

/INH="L"

μA

XC2164Ax1D (3rd Overtone)

3.3V Operation (Unless otherwise stated, VDD=3.3V, Oscillation Frequency f0=48MHz, Ta= -30~+80℃)

PARAMETER

SYMBOL

V_DD

CONDITIONS

MIN. TYP. MAX. UNITS

Operating Voltage

2.70

2.4

3.30

3.63

'H' Level Input Voltage

'L' Level Input Voltage

'H' Level Output Voltage

'L' Level Output Voltage

V_IH

V_IL

0.4

V_OH

CMOS: 2.97V, I_OH= - 8mA

CMOS: 2.97V, I_OH=8mA

2.5

V_OL

0.4

XC2164Ax1D,

f0=55MHz

/INH=Open,

Q₀=Open

Supply Current 1

I_DD1

6.5

(10)

Supply Current 2

Input Pull-Up Resistance 1

Input Pull-Up Resistance 2

Internal Oscillation

I_DD2

R_UP1

R_UP2

/INH = 'L', Q0=Open

2.0

μA

MΩ

kΩ

/INH = 'L'

1.0

4.0

140

/INH = 0.7V_DD

XC2164Ax1D

/INH = 'L'

3.5

kΩ

Feedback Resistance

Output Disable Leak

Current

I_OZ

μA

7/12

XC2164 Series

■SWITCHING CHARACTERISTICS

XC2164Ax1M, T, V (Fundamental) <Chip Enable>

(unless otherwise stated, VDD=3.3V or 5.0V, Ta= -30~+80℃)

PARAMETER

SYMBOL

CONDITIONS

MIN. TYP. MAX. UNITS

1.5

CMOS: C_L=15pF, 0.1V_DD→0.9V_DD

TTL: Load=10TTL, 0.4V →2.4V

CMOS: C_L=15pF, 0.9V_DD→0.1V_DD

TTL: Load=10TTL, 2.4V →0.4V

CMOS: C_L=15pF @ 0.5V_DD

TTL: Load=10TTL @ 1.4V

f0=4MHz, C_L=15pF

Output Rise Time ^(*1)

1.5

Output Fall Time ^(*1)

1.5

100

Output Duty Cycle

DUTY

Output Disable Delay Time ^(*1)

Output Enable Delay Time ^(*1)

Oscillation Start Time ^(*1)

tplz

f0=4MHz, C_L=15pF

tosc_on

f0=4MHz, C_L=15pF

*1: the values are the designed values.

XC2164Ax1A to L (3rd Overtone) <Chip Enable>

(unless otherwise stated, VDD=3.3V or 5.0V, Ta= -30~+80℃)

PARAMETER

SYMBOL

CONDITIONS

MIN. TYP. MAX. UNITS

1.5

CMOS: C_L=15pF, 0.1V_DD→0.9V_DD

TTL: Load=10TTL, 0.4V →2.4V

CMOS: C_L=15pF, 0.9V_DD→0.1V_DD

TTL: Load=10TTL, 2.4V →0.4V

CMOS: C_L=15pF @ 0.5V_DD

TTL: Load=10TTL @ 1.4V

f0=20MHz, C_L=15pF

Output Rise Time ^(*1)

1.5

Output Fall Time ^(*1)

1.5

100

Output Duty Cycle

DUTY

Output Disable Delay Time ^(*1)

Output Enable Delay Time ^(*1)

Oscillation Start Time ^(*1)

tplz

f0=20MHz, C_L=15pF

tosc_on

f0=20MHz, C_L=15pF

*1: the values are the designed values.

XC2164Kx1M, T, V (Fundamental) <Output Enable>

(unless otherwise stated, VDD=3.3V or 5.0V, Ta= -30~+80℃)

PARAMETER

SYMBOL

CONDITIONS

MIN. TYP. MAX. UNITS

1.5

CMOS: C_L=15pF, 0.1V_DD→0.9V_DD

TTL: Load=10TTL, 0.4V →2.4V

CMOS: C_L=15pF, 0.9V_DD→0.1V_DD

TTL: Load=10TTL, 2.4V →0.4V

CMOS: C_L=15pF @ 0.5V_DD

TTL: Load=10TTL @ 1.4V

f0=4MHz, C_L=15pF

Output Rise Time ^(*1)

1.5

Output Fall Time ^(*1)

1.5

100

Output Duty Cycle

DUTY

Output Disable Delay Time ^(*1)

Output Enable Delay Time ^(*1)

Oscillation Start Time ^(*1)

tplz

μs

f0=4MHz, C_L=15pF

tosc_on

f0=4MHz, C_L=15pF

*1: the values are the designed values.

* The values shown are preliminary so that the values may be changed without a prior announcement.

8/12

XC2164

Series

■SWITCHING WAVEFORMS

● Switching Time

(1) CMOS Output

(2) TTL Output

● Duty Cycle

(1) CMOS Output

(2) TTL Output

9/12

XC2164 Series

■SWITCHING WAVEFORMS (Continued)

(3) Output Disable Delay Time, Output Enable Delay Time *)The /INH pin input waveform: less than tr=tf=10ns, VDD input

(4) Oscillation Start Time: tosc_on

*)The VDD pin input waveform : less than tr=tf=10ns,/INH=Open

10/12

XC2164

Series

■PACKAGING INFORMATION

●SOT-26

■MARKING RULE

①Represents product series

●SOT-26

MARK

②Represents divider ratio

①

②

③

④

MARK

RATIO

f0/1

MARK

RATIO

f0/4

f0/8

f0/2

SOT-26

(TOP VIEW)

*B, C, D: fundamental only

MARK

RATIO

f0/1

MARK

RATIO

f0/4

f0/2

f0/8

*L, M, N: fundamental only

③Represents recommended frequency & Rf, Cg &Cd values

* Please refer to the ordering information, SYMBOL ① to ④

④Represents assembly lot number

(Based on internal standards)

11/12

XC2164 Series

1. The products and product specifications contained herein are subject to change without

notice to improve performance characteristics. Consult us, or our representatives

before use, to confirm that the information in this catalog is up to date.

2. We assume no responsibility for any infringement of patents, patent rights, or other

rights arising from the use of any information and circuitry in this catalog.

3. Please ensure suitable shipping controls (including fail-safe designs and aging

protection) are in force for equipment employing products listed in this catalog.

4. The products in this catalog are not developed, designed, or approved for use with such

equipment whose failure of malfunction can be reasonably expected to directly

endanger the life of, or cause significant injury to, the user.

(e.g. Atomic energy; aerospace; transport; combustion and associated safety

equipment thereof.)

5. Please use the products listed in this catalog within the specified ranges.

Should you wish to use the products under conditions exceeding the specifications,

please consult us or our representatives.

6. We assume no responsibility for damage or loss due to abnormal use.

prior permission of Torex Semiconductor Ltd.

12/12

XC2164L51VCF [TOREX]

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