XC2164L61TCR 概述
ICs for use with Crystal Oscillators 集成电路与晶体振荡器的使用
XC2164L61TCR 数据手册
通过下载XC2164L61TCR数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
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■GENERAL DESCRIPTION
The XC2164 series are high frequency, low current consumption CMOS ICs with built-in crystal oscillator and divider circuits.
For fundamental oscillation, output is selectable from any one of the following values for f0: f0/1, f0/2, f0/4, and f0/8.
With oscillation capacitors and a feedback resistor built-in, it is possible to configure a stable fundamental oscillator or 3rd
overtone oscillator using only an external crystal. Also the series has stand-by function built-in and the type, which suspends the
oscillation completely (XC2164A~D type) or the type suspends only an output (XC2164K~N type) are available. The XC2164
series are integrated into SOT-26 packages. The series is also available in chip form.
■FEATURES
■APPLICATIONS
Oscillation Frequency
: 4MHz ~ 30MHz (Fundamental)
20MHz ~ 125MHz (3rd Overtone)
: Selectable from f0/1, f0/2, f0/4,
f0/8 (f0/2, f0/4, f0/8 are
fundamental only)
: 3-State
: 3.3V±10%, 5.0V±10%
: Stand-by function included
Selectable from Chip Enable type
and Output Enable type
●Crystal oscillation modules
●Clocks for micro computer, DSPs
●Communication equipment
●Various system clocks
Divider Ratio
Output
Operating Voltage Range
Low Power Consumption
CMOS
Built-in Oscillation Feedback Resistor
Built- in Oscillation Capacitors Cg, Cd
Packages
: SOT-26, Chip Form (1.3x0.8mm)
■PIN ASSIGNMENT
■PIN CONFIGURATION
PIN NUMBER
PIN NAME
FUNCTION
Clock Output
1
2
Q0
VSS
Ground
Crystal Oscillator
Connection (Output)
Crystal Oscillator
Connection (Input)
3
4
/XT
XT
5
6
VDD
Power Supply
Stand-by Control*
unit [μm]
/INH
*Stand-by control pin has a pull-up resistor built-in.
■/INH, Q0 PIN FUNCTION
/INH
Q0
“H” or OPEN
Clock Output
High impedance
“L”
H = High level
L = Low level
1/12
XC2164 Series
■PAD DIMENSIONS
■PAD LAYOUT FOR CHIP FORM
PAD DIMENSIONS
PIN
NAME
PIN NUMBER
X
Y
1
2
3
4
5
6
Q0
VSS
/ XT
XT
514
222
- 450
- 450
514
47
- 264
- 264
- 264
264
27
VDD
/ INH
1.3×0.8mm
XC2164xx1xxT : 280±20μm
XC2164xx1xxF : 200±20μm
264
unit [μm]
V
DD Level
100×100μm
■PRODUCT CLASSIFICATION
●Ordering Information
XC2164 ①②③④⑤⑥
DESIGNATOR
DESCRIPTION
SYMBOL
DESCRIPTION
A
: Chip Enable: f0/1
B
C
D
K
: Chip Enable: f0/2 (Fundamental only)
: Chip Enable: f0/4 (Fundamental only)
: Chip Enable: f0/8 (Fundamental only)
: Output Enable: f0/1
Divider Ratio
&
/INH Pin Function
①
L
M
N
: Output Enable: f0/2 (Fundamental only)
: Output Enable: f0/4 (Fundamental only)
: Output Enable: f0/8 (Fundamental only)
5
6
1
: Not polyimide coating on the chip surface (SOT-26 only)
: Polyimide coating on the chip surface (Chip form only)
: CMOS (VDD/2) *TTL: Fundamental 4MHz to 30MHz
: 3rd Overtone, built-in type
②
③
④
Chip Surface Treatment
Duty Level
(Table 1)
(Table 2)
Frequency Range & Rf,
Cg, Cd Values
: Fundamental, built-in type
C
M
R
L
T
F
: Chip form
: SOT-26
: Embossed tape, standard feed
: Embossed tape, reverse feed
: Chip tray (Wafer thickness : 280±20μm)
: Chip tray (Wafer thickness : 200±20μm)
⑤
⑥
Packages
Device Orientation
Table 1: 3rd Overtone, Built-In Type
FREQUENCY RANGE
Rf
Cg
Cd
SYMBOL
(kΩ)
(pF)
(pF)
3.3V ±10%
5.0V ±10%
20MHz to 30MHz
30MHz to 40MHz
40MHz to 50MHz
50MHz to 65MHz
65MHz to 80MHz
80MHz to 95MHz
95MHz to 110MHz
110MHz to 125MHz
-
A
B
C
D
E
F
H
K
L
-
9.0
6.5
5.0
3.5
2.8
2.5
2.2
2.0
2.3
21.5
20.0
16.0
14.0
12.5
10.0
8.0
21.5
20.0
16.0
14.0
12.5
10.0
8.0
20MHz to 30MHz
30MHz to 40MHz
40MHz to 50MHz
50MHz to 65MHz
65MHz to 80MHz
80MHz to 95MHz
95MHz to 110MHz
110MHz to 125MHz
7.0
5.5
7.0
5.5
Table 2: Fundamental, Built-In Type
FREQUENCY RANGE
Rf
(kΩ)
Cg
(pF)
Cd
(pF)
SYMBOL
3.3V ±10%
5.0V ±10%
M, V
T
4MHz to 30MHz
4MHz to 30MHz
4MHz to 30MHz
4MHz to 30MHz
3.5/7.0
3.5/7.0
20.0
35.0
20.0
35.0
(*)Rf = 3.5MΩ@VDD = 5.0V Operation
Rf = 7.0 MΩ@VDD =3.3V Operation
2/12
XC2164
Series
■BLOCK DIAGRAM
■ABSOLUTE MAXIMUM RATINGS
Ta=25℃
PARAMETER
Supply Voltage
SYMBOL
VDD
CONDITIONS
UNITS
V
VSS - 0.3 ~ VSS + 7.0
VSS - 0.3 ~ VDD + 0.3
250*
Input Voltage
VIN
V
Power Dissipation
Operating Temperature Range
Pd
mW
℃
Topr
- 40 ~ + 85
- 65 ~ + 150 (Chip Form)
- 55 ~ + 125 (SOT-26)
℃
Storage Temperature Range
Tstg
℃
** When implemented on a glass epoxy PCB. (SOT-26 package)
3/12
XC2164 Series
■ELECTRICAL CHARACTERISTICS
●DC Electrical Characteristics
XC2164Ax1M, T, V / XC2164Kx1M, T, V (Fundamental)
5.0V operation (unless otherwise stated, VDD=5.0V, No Load, Ta= -30~+80℃)
PARAMETER
SYMBOL
VDD
CONDITIONS
MIN.
TYP.
5.0
-
MAX.
5.5
-
UNITS
Operating Voltage
4.5
V
V
V
V
V
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
VIH
2.4
VIL
-
-
0.4
-
VOH
CMOS: VDD=4.5V, IOH= - 16mA
CMOS: VDD=4.5V, IOH=16mA
3.9
4.2
0.3
11
11
11
11
5
VOL
-
0.4
(15)
(15)
(15)
(15)
(8)
-
XC2164Ax1M, V
/INH=Open,
-
XC2164Ax1T
Supply Current 1
Supply Current 2
IDD1
Q0=Open
mA
-
-
XC2164Kx1M, V
f=30MHz
XC2164Kx1T
-
XC2164Ax1M, V
/INH="L",
μA
-
5
(8)
XC2164Ax1T
IDD2
Q0=Open
-
XC2164Kx1M, V
(T.B.D.*) (T.B.D.*)
f=30MHz
mA
-
XC2164Kx1T
/INH="L"
9
(14)
2.0
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation
Feedback Resistance
Output Disable
RUP1
RUP2
0.5
25
1.0
50
MΩ
kΩ
/INH=0.7 VDD
100
Rf
-
-
3.5
-
-
MΩ
μA
IOZ
/INH="L"
10
Leak Current
* T.B.D.: To be determined
XC2164Ax1M, XC2164Kx1M (Fundamental)
3.3V operation (unless otherwise stated, VDD=3.3V, No Load, Ta= -30~+80℃)
PARAMETER
SYMBOL
VDD
CONDITIONS
MIN.
TYP.
MAX.
3.63
-
UNITS
Operating Voltage
2.97
3.30
V
V
V
V
V
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
VIH
2.4
-
-
VIL
-
2.5
-
0.4
-
VOH
CMOS: VDD=2.97V, IOH= - 8mA
CMOS: VDD=2.97V, IOH=8mA
-
VOL
-
0.4
(8)
/INH=Open,
Q0=Open, f=30MHz
/INH="L",
XC2164Ax1M
XC2164Kx1M
XC2164Ax1M
XC2164Kx1M
-
5
Supply Current 1
Supply Current 2
IDD1
IDD2
mA
-
5
2
(8)
(4)
-
μA
mA
MΩ
kΩ
Q0=Open, f=30MHz
-
(T.B.D.*) (T.B.D.*)
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation
Feedback Resistance
Output Disable
RUP1
RUP2
/INH="L"
1.0
35
2.0
70
4.0
/INH=0.7 VDD
140
Rf
Id
-
-
7.0
-
-
MΩ
μA
/INH="L"
10
Leak Current
* T.B.D.: To be determined
4/12
XC2164
Series
■ELECTRICAL CHARACTERISTICS (Continued)
●DC Electrical Characteristics (Continued)
XC2164Ax1T, V / XC2164Kx1T, V (Fundamental)
3.3V operation (unless otherwise stated, VDD=3.3V, No Load, Ta= -30~+80℃)
PARAMETER
SYMBOL
VDD
CONDITIONS
MIN.
TYP.
MAX. UNITS
Operating Voltage
2.50
3.30
3.63
-
V
V
V
V
V
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
VIH
2.4
-
-
VIL
-
0.4
-
VOH
CMOS: 2.97V, IOH= - 8mA
CMOS: 2.97V, IOH=8mA
XC2164Ax1T
2.5
-
VOL
-
-
0.4
(6.5)
(8)
(6.5)
(8)
(4)
(4)
-
4
5
4
5
2
2
/INH=Open,
-
XC2164Ax1V
XC2164Kx1T
XC2164Kx1V
XC2164Ax1T
XC2164Ax1V
XC2164Kx1T
XC2164Kx1V
Supply Current 1
Supply Current 2
IDD1
Q0=Open,
f=30MHz
mA
-
-
-
μA
/INH="L",
Q0=Open,
f=30MHz
-
IDD2
-
(T.B.D.*) (T.B.D.*)
(T.B.D.*) (T.B.D.*)
mA
-
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation
RUP1
RUP2
/INH="L"
1.0
35
2.0
70
4.0
MΩ
kΩ
/INH=0.7 VDD
140
Rf
-
-
7.0
-
-
MΩ
μA
Feedback Resistance
Output Disable
IOZ
/INH="L"
10
Leakage Current
* T.B.D.: To be determined
Comparative Chart of Oscillation Frequency vs. Supply Voltage, and Negative Resistance Value
OSCILLATION FREQUENCY vs. SUPPLY VOLTAGE
NEGATIVE RESISTANCE VALUE
SYMBOL
VDD=3.3V±10%
±4.3ppm
VDD=5.0V±10%
±4.5ppm
VDD=3.3V
- 130Ω
- 150Ω
- 660Ω
VDD=5.0V
- 220Ω
- 250Ω
- 760Ω
M
V
T
±1.2ppm
±2.1ppm
±9.4ppm
±7.0ppm
(The designed value when 30MHz crystal is used.)
5/12
XC2164 Series
■ELECTRICAL CHARACTERISTICS (Continued)
●DC Electrical Characteristics (Continued)
XC2164Ax1A ~ XC2164Ax1K (3rd Overtone)
5.0V Operation (Unless otherwise stated, VDD=5.0V, No Load, Ta= -30~+80℃)
PARAMETER
SYMBOL
VDD
CONDITIONS
MIN. TYP. MAX.
UNITS
Operating Voltage
4.5
5.0
-
5.5
-
V
V
V
V
V
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
VIH
2.4
VIL
-
-
0.4
-
VOH
CMOS: 4.5V, IOH= -16mA
CMOS: 4.5V, IOH=16mA
3.9
4.2
0.3
17.0
17.0
19.0
23.0
24.0
30.0
30.0
30.0
5.0
1.0
50
VOL
-
-
0.4
(23)
(23)
(26)
(32)
(32)
(40)
(40)
(40)
( 8 )
2.0
100
-
XC2164Ax1A, f0=30MHz
XC2164Ax1B, f0=40MHz
XC2164Ax1C, f0=55MHz
XC2164Ax1D, f0=70MHz
XC2164Ax1E, f0=85MHz
XC2164Ax1F, f0=100MHz
XC2164Ax1H, f0=110MHz
XC2164Ax1K, f0=125MHz
-
-
/INH=Open,
Q0=Open
-
Supply Current 1
IDD1
mA
-
-
-
-
Supply Current 2
IDD2
RUP1
RUP2
/INH="L", Q0=Open
-
μA
MΩ
kΩ
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
/INH="L"
0.5
25
-
/INH=0.7 VDD
XC2164Ax1A
XC2164Ax1B
XC2164Ax1C
XC2164Ax1D
XC2164Ax1E
XC2164Ax1F
XC2164Ax1H
XC2164Ax1K
9.0
6.5
5.0
3.5
2.8
2.5
2.2
2.0
-
-
-
-
Internal Oscillation
-
-
Rf
kΩ
Feedback Resistance
-
-
-
-
-
-
-
-
Output Disable
Leak Current
IOZ
/INH="L"
-
-
10
μA
6/12
XC2164
Series
■ELECTRICAL CHARACTERISTICS (Continued)
●DC Electrical Characteristics (Continued)
XC2164Ax1B, C, E, F, H, K, L (3rd Overtone)
3.3V Operation (unless otherwise stated, VDD=3.3V, No Load, Ta= -30~+80℃)
PARAMETER
SYMBOL
VDD
CONDITIONS
MIN. TYP. MAX. UNITS
Operating Voltage
2.97 3.30 3.63
V
V
V
V
V
"H" Level Input Voltage
"L" Level Input Voltage
"H" Level Output Voltage
"L" Level Output Voltage
VIH
2.4
-
-
0.4
-
VIL
-
-
VOH
CMOS: 2.97V, IOH= - 8mA
CMOS: 2.97V, IOH=8mA
2.5
-
VOL
-
-
0.4
(7)
(8)
(13)
(13)
(15)
(15)
(15)
-
XC2164Ax1B, f0=30MHz
-
4.5
5.0
8.0
8.5
9.5
10.0
10.5
2.0
2.0
70
XC2164Ax1C, f0=40MHz
XC2164Ax1E, f0=70MHz
XC2164Ax1F, f0=85MHz
XC2164Ax1H, f0=100MHz
XC2164Ax1K, f0=110MHz
XC2164Ax1L, f0=125MHz
-
-
/INH=Open,
Q0=Open
Supply Current 1
IDD1
mA
-
-
-
-
Supply Current 2
IDD2
RUP1
RUP2
/INH="L", Q0=Open
-
μA
MΩ
kΩ
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
/INH="L"
1.0
4.0
140
-
/INH=0.7 VDD
XC2164Ax1B
XC2164Ax1C
XC2164Ax1E
XC2164Ax1F
XC2164Ax1H
XC2164Ax1K
XC2164Ax1L
35
-
6.5
5.0
2.8
2.5
2.2
2.0
2.3
-
-
-
-
Internal Oscillation
Rf
kΩ
-
-
Feedback Resistance
-
-
-
-
-
-
Output Disable
Leak Current
IOZ
/INH="L"
-
-
10
μA
XC2164Ax1D (3rd Overtone)
3.3V Operation (Unless otherwise stated, VDD=3.3V, Oscillation Frequency f0=48MHz, Ta= -30~+80℃)
PARAMETER
SYMBOL
VDD
CONDITIONS
MIN. TYP. MAX. UNITS
Operating Voltage
2.70
2.4
-
3.30
3.63
-
V
V
V
V
V
'H' Level Input Voltage
'L' Level Input Voltage
'H' Level Output Voltage
'L' Level Output Voltage
VIH
-
-
-
-
VIL
0.4
-
VOH
CMOS: 2.97V, IOH= - 8mA
CMOS: 2.97V, IOH=8mA
2.5
-
VOL
0.4
XC2164Ax1D,
f0=55MHz
/INH=Open,
Q0=Open
Supply Current 1
IDD1
-
6.5
(10)
mA
Supply Current 2
Input Pull-Up Resistance 1
Input Pull-Up Resistance 2
Internal Oscillation
IDD2
RUP1
RUP2
/INH = 'L', Q0=Open
-
2.0
2.0
70
-
μA
MΩ
kΩ
/INH = 'L'
1.0
35
4.0
140
/INH = 0.7VDD
Rf
XC2164Ax1D
/INH = 'L'
-
-
3.5
-
-
kΩ
Feedback Resistance
Output Disable Leak
Current
IOZ
10
μA
7/12
XC2164 Series
■SWITCHING CHARACTERISTICS
XC2164Ax1M, T, V (Fundamental) <Chip Enable>
(unless otherwise stated, VDD=3.3V or 5.0V, Ta= -30~+80℃)
PARAMETER
SYMBOL
tr
CONDITIONS
MIN. TYP. MAX. UNITS
-
-
1.5
-
-
ns
ns
ns
ns
%
CMOS: CL=15pF, 0.1VDD→0.9VDD
TTL: Load=10TTL, 0.4V →2.4V
CMOS: CL=15pF, 0.9VDD→0.1VDD
TTL: Load=10TTL, 2.4V →0.4V
CMOS: CL=15pF @ 0.5VDD
TTL: Load=10TTL @ 1.4V
f0=4MHz, CL=15pF
Output Rise Time (*1)
1.5
-
1.5
-
Output Fall Time (*1)
tf
-
1.5
-
45
45
-
-
-
-
-
-
55
55
100
6
Output Duty Cycle
DUTY
%
Output Disable Delay Time (*1)
Output Enable Delay Time (*1)
Oscillation Start Time (*1)
tplz
tplz
ns
ms
ms
f0=4MHz, CL=15pF
-
tosc_on
f0=4MHz, CL=15pF
-
6
*1: the values are the designed values.
XC2164Ax1A to L (3rd Overtone) <Chip Enable>
(unless otherwise stated, VDD=3.3V or 5.0V, Ta= -30~+80℃)
PARAMETER
SYMBOL
tr
CONDITIONS
MIN. TYP. MAX. UNITS
-
-
1.5
-
-
ns
ns
ns
ns
%
CMOS: CL=15pF, 0.1VDD→0.9VDD
TTL: Load=10TTL, 0.4V →2.4V
CMOS: CL=15pF, 0.9VDD→0.1VDD
TTL: Load=10TTL, 2.4V →0.4V
CMOS: CL=15pF @ 0.5VDD
TTL: Load=10TTL @ 1.4V
f0=20MHz, CL=15pF
Output Rise Time (*1)
1.5
-
1.5
-
Output Fall Time (*1)
tf
-
1.5
-
45
45
-
-
-
-
-
-
55
55
100
6
Output Duty Cycle
DUTY
%
Output Disable Delay Time (*1)
Output Enable Delay Time (*1)
Oscillation Start Time (*1)
tplz
tplz
ns
ms
ms
f0=20MHz, CL=15pF
-
tosc_on
f0=20MHz, CL=15pF
-
6
*1: the values are the designed values.
XC2164Kx1M, T, V (Fundamental) <Output Enable>
(unless otherwise stated, VDD=3.3V or 5.0V, Ta= -30~+80℃)
PARAMETER
SYMBOL
tr
CONDITIONS
MIN. TYP. MAX. UNITS
-
-
1.5
-
-
ns
ns
ns
ns
%
CMOS: CL=15pF, 0.1VDD→0.9VDD
TTL: Load=10TTL, 0.4V →2.4V
CMOS: CL=15pF, 0.9VDD→0.1VDD
TTL: Load=10TTL, 2.4V →0.4V
CMOS: CL=15pF @ 0.5VDD
TTL: Load=10TTL @ 1.4V
f0=4MHz, CL=15pF
Output Rise Time (*1)
1.5
-
1.5
-
Output Fall Time (*1)
tf
-
1.5
-
45
45
-
-
-
-
-
-
55
55
100
10
6
Output Duty Cycle
DUTY
%
Output Disable Delay Time (*1)
Output Enable Delay Time (*1)
Oscillation Start Time (*1)
tplz
tplz
ns
μs
ms
f0=4MHz, CL=15pF
-
tosc_on
f0=4MHz, CL=15pF
-
*1: the values are the designed values.
* The values shown are preliminary so that the values may be changed without a prior announcement.
8/12
XC2164
Series
■SWITCHING WAVEFORMS
● Switching Time
(1) CMOS Output
(2) TTL Output
● Duty Cycle
(1) CMOS Output
(2) TTL Output
9/12
XC2164 Series
■SWITCHING WAVEFORMS (Continued)
(3) Output Disable Delay Time, Output Enable Delay Time *)The /INH pin input waveform: less than tr=tf=10ns, VDD input
(4) Oscillation Start Time: tosc_on
*)The VDD pin input waveform : less than tr=tf=10ns,/INH=Open
10/12
XC2164
Series
■PACKAGING INFORMATION
●SOT-26
■MARKING RULE
①Represents product series
●SOT-26
MARK
4
6
5
4
②Represents divider ratio
①
②
③
④
<Chip Enable>
MARK
RATIO
f0/1
MARK
RATIO
1
2
3
A
B
C
D
f0/4
f0/8
f0/2
SOT-26
(TOP VIEW)
*B, C, D: fundamental only
<Output Enable>
MARK
RATIO
f0/1
MARK
RATIO
f0/4
K
L
M
N
f0/2
f0/8
*L, M, N: fundamental only
③Represents recommended frequency & Rf, Cg &Cd values
* Please refer to the ordering information, SYMBOL ① to ④
④Represents assembly lot number
(Based on internal standards)
11/12
XC2164 Series
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this catalog is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this catalog.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this catalog.
4. The products in this catalog are not developed, designed, or approved for use with such
equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this catalog within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this catalog may be copied or reproduced without the
prior permission of Torex Semiconductor Ltd.
12/12
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