XC61HC5952MR-G [TOREX]

Power Management Circuit, Fixed, +5.9VV, CMOS;


型号：	XC61HC5952MR-G
厂家：	Torex Semiconductor
描述：	Power Management Circuit, Fixed, +5.9VV, CMOS
文件：	总13页 (文件大小：549K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

XC61HSeries

ETR0212-004

Voltage Detector with Delay Circuit Built-In

■GENERAL DESCRIPTION

The XC61H series is a highly accurate, low power consumption CMOS voltage detector with a delay circuit. Detect voltage is

accurate with minimal temperature drift. Output configurations are available in both CMOS and N-channel open drain.

Since the full delay circuit is built-in, an external delay-time capacitor is not necessary so that high density mounting is possible.

■FEATURES

■APPLICATIONS

Detect Voltage Accuracy : ± 2%

●Microprocessor reset circuitry

●System battery life and charge voltage monitors

●Memory battery back-up circuits

●Power-on reset circuits

Low Power Consumption

Detect Voltage Range

Operating Voltage Range

: 1.0μA(TYP.)[ V_IN=2.0V ]

1.6V ~ 6.0V (0.1V increments)

: 0.7V ~ 10.0V

Detect Voltage Temperature Characteristics

: ±100ppm/℃(TYP.)

Built-In Release Delay time: 1ms (MIN.)

50ms (MIN.)

●Power failure detection

●Delay circuitry

80ms (MIN.)

Output Configuration

Operating Ambient Temperature

Package

N-ch open drain output or CMOS

30℃～+80℃

SOT-23

Environmentally Friendly : EU RoHS Compliant, Pb Free

■TYPICAL PERFORMANCE

■TYPICAL APPLICATION CIRCUITS

CHARACTERISTICS

●Release Delay Time (t_DR) vs. Ambient Temperature

μP

ＸＣ６１ＨＣ３０１２

VIN

R pull

RESETB

INPUT

VIN

VSS

XC61HN series

Rpull is not necessary with CMOS output products

Not necessary with CMOS output products

Ambient Temperature: Ta (℃)

1/13

XC61H Series

■PIN CONFIGURATION

■PIN ASSIGNMENT

PIN NUMBER

PIN NAME

SOT-23

FUNCTION

V_SS

RESETB

V_IN

Ground

Output

Supply Voltage Input

（TOP VIEW）

■PRODUCT CLASSIFICATION

●Ordering Information

(*1)

XC61H①②③④⑤⑥⑦-⑧

DESIGNATOR

ITEM

SYMBOL

DESCRIPTION

CMOS output

①

Output Configuration

N-ch open drain output

e.g. 2.5V → ②2 , ③5

50ms ~ 200ms

②③

Detect Voltage (V_DF

)

16 ~ 60

④

⑤

Release Delay Time

Detect Accuracy

80ms ~ 400ms

1ms ~ 50ms

±2.0%^(*2)

Package

(*1)

⑥⑦-⑧

MR-G

SOT-23 (3000/Reel)

(Oder Unit)

(*1) The ”-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.

(*2) No parts are available with an accuracy of ± 1%

■BLOCK DIAGRAMS

(2)N-ch open drain output

(1)CMOS output

2/13

XC61H

Series

■ABSOLUTE MAXIMUM RATINGS

Ta=25℃

PARAMETER

Input Voltage

Output Current

SYMBOL

RATINGS

V_SS-0.3 ~ 12.0

UNITS

V_IN

I_OUT

CMOS

V_SS-0.3 ~V_IN+0.3

V_SS-0.3 ~ 12

250

Output Voltage

V_RESETB

N-ch open drain output

SOT-23

Power Dissipation

℃

Operating Ambient Temperature

Storage Temperature

Topr

Tstg

-30～+80

-40～+125

℃

Ta = 25℃

■ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

CONDITIONS

MIN.

V_DF(T)

x 0.98

V_DF

TYP.

V_DF(T)

V_DF

MAX.

V_DF(T)

x 1.02

V_DF

UNITS

CIRCUIT

V_DF

①

Detect Voltage

V_HYS

Hysteresis Width

x 0.02 x 0.05 x 0.08

V_IN= 1.5V

0.9

1.0

1.3

1.6

2.0

2.6

3.0

3.4

3.8

4.2

10.0

V_IN= 2.0V

V_IN= 3.0V

Supply Current ^(*1)

Operating Voltage

I_SS

μA

②

①

③

V_IN= 4.0V

V_IN= 5.0V

V_IN

V_DF=1.6V～6.0V

0.7

1.0

3.0

5.0

6.0

7.0

V_IN= 1.0V

V_IN= 2.0V

V_IN= 3.0V

V_IN= 4.0V

V_IN= 5.0V

2.2

7.7

10.1

11.5

13.0

N-ch, V_DS= 0.5V

Output Current

I_OUT

P-ch, V_DS=2.1V

(CMOS Output)

V_IN= 8.0V

-10.0

-2.0

④

③

CMOS Output

V_IN=V_DFx 0.9V, V_RESETB=0V

-0.01

Leakage

Current

(Pch)

I_LEAK

μA

Nch Open

V_IN=10.0V, V_RESETB=10.0V

0.01

0.1

Drain Output

V_DF

Detect Voltage

Temperature Characteristics

-30℃≦Topr≦80℃

±100

ppm/℃

①

⑤

(Δ

Topr

･

V_DF)

200

400

Release Delay Time

(VDR → RESETB inversion)

t_DR

VIN changes from 0.6V to 10V

VDF (T) is nominal detect voltage value

Release Voltage: VDR = VDF + VHYS

(*1) The supply current during power-start until output being stable (during release operation) is 2μA greater with comparison to the period

after the completion of release operation because of the shoot-through current in delay current.

3/13

XC61H Series

■OPERATIONAL EXPLANATION

●CMOS output

①

An input voltage V_INstarts higher than the release voltage VDR. Then, V_INvoltage will gradually fall. When V_INvoltage is

higher than detect voltage VDF, output voltage RESETB is equal to the VIN voltage.

*Note that high impedance exists at RESETB with the N-channel open drain output configuration. If the RESETB pin is

pulled up, RESETB will be equal to the pull up voltage.

②

③

When VIN falls below VDF, RESETB will be equal to ground voltage VSS level (detect state).

* Note that this also applies to N-channel open drain output configurations.

When VIN falls to a level below that of the minimum operating voltage VMIN, output will become unstable.

*When the output pin is generally pulled up with N-channel open drain output configurations, output will be equal to pull

up voltage.

④

When VIN rises above the VSS level (excepting levels lower than minimum operating voltage), RESETB will be equal to

VSS until VIN reaches the VDR level.

⑤

⑥

Although VIN will rise to a level higher than VDR, RESETB maintains ground voltage level via the delay circuit.

After taking a release delay time, VIN voltage will be output at the RESETB pin.

*High impedance exists with the N-channel open drain output configuration and that voltage will be dependent on pull up.

Notes:

1. The difference between VDR and VDF represents the hysteresis width.

2. Release delay time (t_DR) represents the time it takes until when VIN voltage appears at RESETB pin once the input

voltage has exceeded the VDR level.

●Timing Chart

Output Voltage (RESETB)

Release Delay Time (t_DR

)

4/13

XC61H

Series

■NOTES ON USE

1. Please use this IC within the stated maximum ratings. For temporary, transitional voltage drop or voltage rising

phenomenon, the IC is liable to malfunction should the ratings be exceeded.

2. When a resistor is connected between the V_INpin and the power supply with CMOS output configurations, irregular

oscillation may occur as a result of voltage drops at R_INif load current (I_OUT) exists. It is therefore recommend that no

resistor be added. (refer to Figure 1 below)

3. When a resistor (R_IN) is connected between the V_INpin and the power supply with CMOS output configurations,

irrespective of N-ch open drain output configurations, oscillation may occur as a result of shoot-through current at the time

of voltage release even if load current (I_OUT) does not exist. (refer to Figure 2 below)

4. If a resistor (R^IN) must be used, then please use with as small a level of input impedance as possible in order to control the

occurrences of oscillation as described above. Further, please ensure that R^INis less than 10kΩ and that CIN is more than

0.1μF, please test with the actual device. However, N-ch open drain output only. (Figure 1).

5. With a resistor RIN connected between the V^INpin and the power supply, the VIN pin voltage will be getting lower than the

power supply voltage as a result of the IC's supply current flowing through the V^INpin.

6. Depending on circuit's operation, release delay time of this IC can be widely changed due to upper limits or lower limits of

operational ambient temperature.

7. Torex places an importance on improving our products and its reliability.

However, by any possibility, we would request user fail-safe design and post-aging treatment on system or equipment.

●Irregular Oscillations

(1) Irregular oscillation as a result of load current with the CMOS output configuration:

When the voltage applied at power supply, release operations commence and the detector's output voltage

increases. Load current (I_OUT) will flow through R_L. Because a voltage drop (R_INx I_OUT) is produced at the R_INresistor,

located between the power supply and the V_INpin, the load current will flow via the IC's VIN pin. The voltage drop will

also lead to a fall in the voltage level at the V_INpin. When the V_INpin voltage level falls below the detect voltage level,

detect operations will commence. Following detect operations, load current flow will cease and since voltage drop at

R_INwill disappear, the voltage level at the V_INpin will rise and release operations will begin over again.

Irregular oscillation may occur with this "release - detect - release" repetition.

Further, this condition will also appear via means of a similar mechanism during detect operations.

(2) Irregular oscillation as a result of shoot-through current:

Since the XC61H series are CMOS ICS, shoot-through current will flow when the IC's internal circuit switching

operates (during release and detect operations). Consequently, irregular oscillation is liable to occur during release

voltage operations as a result of output current which is influenced by this shoot-through current (Figure 3).

Since hysteresis exists during detect operations, irregular oscillation is unlikely to occur.

XC61HC Series

XC61HN Series

Power Supply

図 1．入力抵抗を入れた時の回路例

Figure 1 Use of input resistor R_IN

5/13

XC61H Series

■NOTES ON USE (Continued)

●Irregular Oscillations (Continued)

XC61HC Series

XC61H C Series

R_IN

R_IN×I_{OU T}

Power Supply

I_OUT

V_IN

RESETB

OUT

Voltage drop

V_SS

Figure 2 Irregular Oscillation by output current

XC61HC Series

XC61HN Series

XC61HC Series

R_IN

Power Supply

R_IN×I_SS

V_IN

REVSETB

OUT

Voltage drop

V_SS

I_SS*

(includes through current)

図 3．貫通電流による発振

Figure 3 Irregular Oscillation by shoot-through current

6/13

XC61H

Series

■TEST CIRCUITS

測定回路１

●Circuit ①

測定回路２

●Circuit ②

^*R

220kΩ

VIN

VSS

VIN

RESETB

VSS

測定回路３

●Circuit ③

測定回路４

●Circuit ④

VIN

VDS

VIN

RESETB

VSS

VDS

測定回路５

●Circuit ⑤

220kΩ

VIN

VSS

measurement of

waveform

RESETB

*R is not necessary with CMOS output products.

7/13

XC61H Series

■TYPICAL PERFORMANCE CHARACTERISTICS

XC61HN3512

XC61HN1612

XC61HN2512

XC61HN3512

XC61HN1612

XC61HN2512

(3) Detect Voltage, Release Voltage vs. Input Voltage

XC61HN1612

XC61HN2512

XC61HN3512

R-pull:100kΩ

Ta=-30℃

25℃

R-pull:100kΩ

Ta=-30℃

25℃

R-pull:100kΩ

Ta=-30℃

25℃

80℃

XC61HN1612

XC61HN2512

8/13

XC61H

Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

XC61HN3512

XC61HN2512

XC61HN1612

XC61HN2512

XC61HN3512

XC61HC2712

XC61HC4412

（7）Ambient Temperature vs. Release Delay Time (t_DR

)

XC61HC3052

XC61HC3042

XC61HC3012

9/13

XC61H Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

（8）Input Voltage vs. Release Delay Time (t_DR

)

XC61HC2712

10/13

XC61H

Series

■PACKAGING INFORMATION

●SOT-23

11/13

XC61H Series

■MARKING RULE

●SOT-23

① represents product series

MARK

PRODUCTS SERIES

XC61H*******-G

② standard：represents output configuration and integer number of detect voltage

CMOS output (XC61HC series)

N-channel open drain (XC61HN series)

VOLTAGE

MARK

(V)

MARK

(V)

1. X

2. X

3. X

4. X

5. X

6. X

1. X

2. X

3. X

4. X

5. X

6. X

③ represents decimal number of detect voltage and delay time.

MARK

DELAY TIME

DETECT

VOLTAGE

(V)

DELAY TIME

50ms～200ms

DELAY TIME

1ms～50ms

80ms～400ms

（XC61H***4***-G）

（XC61H***1***-G）

（XC61H***5***-G）

X.0

X.1

X.2

X.3

X.4

X.5

X.6

X.7

X.8

X.9

④ represents production lot number

0 to 9, A to Z or inverted characters of 0 to 9, A to Z repeated.

(G, I, J, O, Q,W excluded)

*No character inversion used.

12/13

XC61H

Series

1. The products and product specifications contained herein are subject to change without

notice to improve performance characteristics. Consult us, or our representatives

before use, to confirm that the information in this datasheet is up to date.

2. We assume no responsibility for any infringement of patents, patent rights, or other

rights arising from the use of any information and circuitry in this datasheet.

3. Please ensure suitable shipping controls (including fail-safe designs and aging

protection) are in force for equipment employing products listed in this datasheet.

4. The products in this datasheet are not developed, designed, or approved for use with

such equipment whose failure of malfunction can be reasonably expected to directly

endanger the life of, or cause significant injury to, the user.

(e.g. Atomic energy; aerospace; transport; combustion and associated safety

equipment thereof.)

5. Please use the products listed in this datasheet within the specified ranges.

Should you wish to use the products under conditions exceeding the specifications,

please consult us or our representatives.

6. We assume no responsibility for damage or loss due to abnormal use.

prior permission of TOREX SEMICONDUCTOR LTD.

13/13

XC61HC5952MR-G [TOREX]

相关型号：

XC61HC6012MR-G

XC61HC6022MR-G

XC61HC6042MR-G

XC61HC6052MR-G

XC61HN1612MR-G

XC61HN1622MR-G

XC61HN1642MR-G

XC61HN1652MR-G

XC61HN1812MR-G

XC61HN2512MR-G

XC61HN2542MR-G

XC61HN2552MR-G