XC6601A091MR-G [TOREX]
暂无描述;型号: | XC6601A091MR-G |
厂家: | Torex Semiconductor |
描述: | 暂无描述 稳压器 |
文件: | 总32页 (文件大小:625K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
XC6601Series
ETR0335_003
Low Voltage Input LDO Voltage Regulators
■GENERAL DESCRIPTION
The XC6601 series is a low voltage input CMOS LDO regulator which provides highly accurate (±20mV) outputs and can
supply current efficiently due to its ultra low on-resistance even at low output voltages. The series is ideally suited to the
applications which require very low dropout voltage operation and consists of a voltage reference, an error amplifier, a driver
transistor, a current limiter, a fold back circuit, a thermal shutdown (TSD) circuit, an under voltage lock out (UVLO) circuit and
a phase compensation circuit.
Output voltage is selectable in 0.05V increments within a range of 0.7V to 1.8V using laser trimming technology and
ceramic capacitors can be used for the output stabilization capacitor (CL).
The over current protection circuit (the current limiter and the fold back circuit) as well as the thermal shutdown circuit (the
TSD circuit) are built-in. These two protection circuits will operate when either the output current reaches the current limit
level or the junction temperature reaches the temperature limit level.
With the built-in UVLO function, the regulator output is forced OFF when the voltage level at the VBIAS pin or the VIN pin falls
below the UVLO voltage level.
The CE function enables the output to be turned off and the series to be put in stand-by mode resulting in greatly reduced
power consumption. At the time of entering the stand-by mode, the series enables the electric charge at the output capacitor
(CL) to be discharged via the internal auto-discharge switch which is located between the VOUT pin and the VSS pin. As a
result the VOUT pin quickly returns to the VSS level.
■FEATURES
Maximum Output Current
Dropout Voltage
■APPLICATIONS
●Mobile phones
: 400mA (Limiter 550mA TYP.)
: 38mV@IOUT=100mA (TYP.)
(at VBIAS - VOUT=2.4V)
: 2.5V ~ 6.0V
(VBIAS - VOUT≧1.2V)
: 1.0V ~ 3.0V
(VIN≦VBIAS)
: 0.7V ~ 1.8V (0.05V increments)
:±20mV
: IBIAS=25μA , IIN=1.0μA (TYP.)
: IBIAS=0.01μA , IIN=0.01μA (TYP.)
: VBIAS=2.0V, VIN=0.4V (TYP.)
:150℃/125℃ (TYP.)
: -40℃ ~ 85℃
●Cordless phones
●Wireless communication equipment
●Portable games
Bias Voltage Range
Input Voltage Range
●Cameras
Output Voltage Range
Output Voltage Accuracy
Power Consumption
●Audio visual equipment
●Portable AV equipment
●PDAs
UVLO
TSD (Detect/Release)
Operating Temperature Range
CL High Speed Auto-Discharge
Low ESR Capacitor
Packages
: Ceramic Capacitor Compatible
: USP-6C, SOT-25, SOT-89-5
■TYPICAL PEFORMANCE
■TYPICAL APPLICATION CIRCUIT
●VBIAS =3.6V , VIN =1.8V , VOUT =1.5V
CHARACTERISTICS
●Dropout Voltage vs. Output Current
XC6601B121MR
Ta=25 [℃]
300
VBIAS=3.0V
250
200
150
100
50
VBIAS=3.3V
VBIAS=3.6V
VBIAS=4.2V
VBIAS=5.0V
0
0
100
200
ꢀOutput Current: IOUT(mA)
300
400
1/32
XC6601 Series
■PIN CONFIGURATION
●USP-6C
●SOT-25
●SOT-89-5
VOUT
CE
4
5
1
2
3
VIN
VBIAS
VSS
SOT-25
(TOP VIEW)
*The heat dissipation pad of the USP-6C
package is recommended to solder as the
recommended mount pattern and metal
mask pattern for mounting strength. This
pad should be electrically opened or
connected to the VBIAS (No.1) pin.
■PIN ASSIGNMENT
PIN NUMBER
PIN NAME
FUNCTION
USP-6C
SOT-25
SOT-89-5
1
3
4
2
6
2
1
5
3
4
2
4
5
3
1
VBIAS
VIN
Power Supply Input
Driver Transistor Input
Output
VOUT
VSS
CE
Ground
ON/OFF Control
■PRODUCT CLASSIFICATION
●Ordering Information
XC6601①②③④⑤⑥
MARK
①
DESCRIPTION
SYMBOL
DESCRIPTION
Type of
A
B
: CE High Active, Pull-Down Resistor Built-in, CL Auto Discharge Function
: CE High Active, No Pull-Down Resistor Built-in, CL Auto Discharge Function
: e.g.) VOUT(T)=1.2V⇒②=1,③=2
Regulators
②③
Output Voltage
07 ~ 18
: 100mV increments, ±20mV accuracy
1
Output Voltage
Accuracy
e.g.) 1.2V⇒②=1,③=2,④=1
④
: 50mV increments, ±20mV accuracy
B
e.g.) 1.25V⇒②=1,③=2,④=B
M
E
P
R
L
: SOT-25
⑤
⑥
Packages
: USP-6C
: SOT-89-5
: Embossed Tape (Standard Feed)
: Embossed Tape (Reverse Feed)
Device Orientation
2/32
XC6601
Series
■BLOCK DIAGRAMS
(1) XC6601A Series
(2) XC6601B Series
*Diodes inside the circuit are an ESD protection diode and a parasitic diode.
3/32
XC6601 Series
■MAXIMUM ABSOLUTE RATINGS
Ta=25 ℃
PARAMETER
Bias Voltage
Input Voltage
Output Current
SYMBOL
VBIAS
VIN
RATINGS
VSS-0.3 ~ +7.0
VSS-0.3 ~ +7.0
700 (*1)
UNITS
V
V
IOUT
mA
VSS-0.3 ~ VBIAS+0.3
VSS-0.3 ~ VIN+0.3
VSS-0.3 ~ +7.0
100
Output Voltage
VOUT
VCE
V
V
CE Input Voltage
USP-6C
1000 (PCB mounted) *2
250
Power Dissipation
SOT-25
Pd
mW
600 (PCB mounted) *2
500
SOT-89-5
1300 (PCB mounted) *2
-40 ~ +85
Operating Temperature Range
Storage Temperature Range
(*1) IOUT=Less than Pd / (VIN-VOUT)
Topr
Tstg
℃
℃
-55 ~ +125
(*2) The power dissipation figure shown is PCB mounted. Please refer to pages 28~30 for details.
4/32
XC6601
Series
■ELECTRICAL CHARACTERISTICS
Ta=25 ℃
CIRCUIT
MAX. UNITS
PARAMETER
Bias Voltage (*1)
Input Voltage (*2)
SYMBOL
VBIAS
CONDITIONS
MIN.
2.5
TYP.
-
-
6.0
3.0
V
V
①
①
V
CE =VBIAS,VIN =VOUT(T)+0.3V
VIN
1.0
VBIAS=VCE=3.6V
(*4)
VBIAS=VCE=3.6V, VIN =VOUT(T)+0.3V,
IOUT=100mA
-0.02 VOUT(T)
E-0 (*5)
+0.02
(*3)
Output Voltage
VOUT(E)
V
①
Maximum Output
Current 1
VCE =VBIAS ,VBIAS -VOUT(T)≧1.2V
IOUTMAX 1
IOUTMAX 2
IOUTMAX 3
△VOUT
mA
mA
mA
mV
①
①
①
①
200
300
400
-
-
-
-
VIN =VOUT(T)+0.5V
Maximum Output
Current 2
VCE =VBIAS ,VBIAS -VOUT(T)≧1.3V
VIN =VOUT(T)+0.5V
-
-
Maximum Output
Current 3
VCE =VBIAS ,VBIAS -VOUT(T)≧1.5V
VIN =VOUT(T)+0.5V
-
VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V,
1mA≦IOUT≦300mA
Load Regulation
8
17
Dropout Voltage 1
Dropout Voltage 2
Dropout Voltage 3
Dropout Voltage 4
Vdif1(*7)
Vdif2 (*7)
Vdif3 (*7)
Vdif4 (*7)
mV
mV
mV
mV
①
①
①
①
VBIAS=VCE, IOUT=100mA
VCE =VBIAS , IOUT=200mA
VCE =VBIAS , IOUT=300mA
VCE =VBIAS , IOUT=400mA
VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V
VOUT=OPEN
E-1 (*6)
E-2 (*6)
E-3 (*6)
E-4 (*6)
Supply Current 1
Supply Current 2
IBIAS
IIN
μA
μA
①
①
8
25
45
VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V
VOUT=OPEN
0.1
1.0
3.0
V
OUT(T)≧1.0V
BIAS=VCE =3.6V, VIN=VOUT(T)
OUT= VOUT(T) - 0.05V
OUT(T)<1.0V
V
V
Bias Current (*10)
IBIASMAX
mA
①
-
1.0
2.5
V
VBIAS=VCE =3.6V, VIN=1.0V
VOUT= VOUT(T) - 0.05V
Stand-by Current 1
Stand-by Current 2
IBIAS_STB
IIN_STB
μA
μA
①
①
VBIAS=6.0V, VIN=3.0V, VCE=VSS
VBIAS=6.0V, VIN=3.0V, VCE=VSS
-
-
0.01
0.01
0.10
0.35
V
OUT(T)≧1.3V
OUT(T)+1.2V≦VBIAS≦6.0V,
VIN=VOUT(T)+0.3V, VCE =VBIAS , IOUT=1mA
V
△VOUT/
Bias Regulation
Input Regulation
%/V
%/V
①
①
-
-
0.01
0.01
0.3
0.1
△VBIAS・VOUT
VOUT(T)<1.3V
2.5V≦VBIAS≦6.0V,
VIN=VOUT(T)+0.3V, VCE =VBIAS , IOUT=1mA
VOUT(T)≧0.90V,
VOUT(T)+0.1V≦VIN≦3.0V,
△VOUT/
VBIAS=VCE=3.6V, IOUT=1mA
V OUT(T)<0.90V,
△VIN・VOUT
1.0V≦VIN≦3.0V
VBIAS=VCE=3.6V, IOUT=1mA
VCE =VBIAS, VIN =VOUT(T)+0.3V,
IOUT=1mA
Bias Voltage UVLO
Input Voltage UVLO
VBIAS_UVLO
VIN_UVLO
V
V
①
①
②
1.37
0.07
-
2.0
0.4
40
2.5
0.6
-
VBIAS=VCE=3.6V, IOUT=1mA
VBIAS= VCE =3.6VDC+0.2Vp-pAC,
VIN=VOUT(T)+0.3V, IOUT=30mA,f=1kHz
VIN=VOUT(T)+0.3VDC+0.2Vp-pAC,
VBIAS=3.6V, IOUT=30mA, f=1kHz
VBIAS Ripple Rejection VBIAS_PSRR
VIN Ripple Rejection VIN_PSRR
dB
dB
②
-
60
-
5/32
XC6601 Series
■ELECTRICAL CHARACTERISTICS (Continued)
Ta=25 ℃
CIRCUIT
MAX. UNITS
PARAMETER
SYNBOL
CONDITIONS
MIN.
-
TYP.
Output Voltage
Temperature
VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V ,
IOUT=30mA,
△VOUT/
ppm/℃
①
±100
-
△Topr・VOUT
Characteristics
- 40℃≦ Topr ≦85℃
VOUT=VOUT(E)×0.95,
Limit Current
Short Current
ILIM
mA
mA
℃
①
①
①
400
550
80
-
-
-
VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V
VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V,
VOUT=0V
ISHORT
TTSD
-
-
Thermal Shutdown
Detect Temperature
Thermal Shutdown
Release Temperature
Hysteresis Width
CL Auto-Discharge
Resistance
Junction Temperature
Junction Temperature
150
TTSR
℃
℃
Ω
①
①
①
-
-
125
25
-
-
TTSD-TTSR
Rdischg
VBIAS=3.6V, VIN= VOUT(T)+0.3V,
VCE= VSS, VOUT=VOUT(T)
290
430
610
V
V
①
①
CE "H" Level Voltage
VCEH
VCEL
VBIAS=3.6V, VIN= VOUT(T)+0.3V
0.75
-
-
-
6.0
CE "L" Level Voltage
VBIAS=3.6V, VIN= VOUT(T)+0.3V
0.16
CE "H" Level Current
(A Series)
2.4
-0.1
-0.1
-
-
-
8.0
0.1
0.1
VBIAS=VCE=6.0V,
VIN=VOUT(T)+0.3V
μA
μA
①
①
ICEH
ICEL
CE "H" Level Current
(B Series)
VBIAS=6.0V, VCE=VSS
VIN=VOUT(T)+0.3V
CE "L" Level Current
NOTE:
* 1: Please use Bias voltage VBIAS within the range VBIAS –VOUT(E) (*3)≧1.2V
* 2: Please use Input voltage VIN within the range VIN≦VBIAS
* 3: VOUT(E) = Effective output voltage (Refer to the voltage chart E-0 and E-1)
* 4: VOUT (T) = Specified output voltage
* 5: E-0 = Please refer to the table named OUTPUT VOLTAGE CHART
* 6: E-1 = Please refer to the table named DROPOUT VOLTAGE CHART
* 7: Vdif = {VIN1(*8)-VOUT1(*9)}.
* 8: VIN1 = The input voltage when VOUT1 appears as input voltage is gradually decreased.
* 9: VOUT1 = A voltage equal to 98% of the output voltage while maintaining an amply stabilized output voltage when VIN=VBIAS at VBIAS<3.0V, and
VIN=3.0V at VBIAS≧3.0V is input to the VIN pin.
* 10: IBIASMAX = A supply current at the VBIAS pin providing for the output current (IOUT) .
■OUTPUT VOLTAGE CHART
NOMINAL
OUTPUT
VOLTAGE (V)
E-0
OUTPUT VOLTAGE (V)
VOUT
NOMINAL
OUTPUT
VOLTAGE (V)
E-0
OUTPUT VOLTAGE (V)
VOUT
VOUT(T)
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
MIN.
0.680
0.730
0.780
0.830
0.880
0.930
0.980
1.030
1.080
1.130
1.180
1.230
MAX.
0.720
0.770
0.820
0.870
0.920
0.970
1.020
1.070
1.120
1.170
1.220
1.270
VOUT(T)
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
1.75
1.80
MIN.
1.280
1.330
1.380
1.430
1.480
1.530
1.580
1.630
1.680
1.730
1.780
MAX.
1.320
1.370
1.420
1.470
1.520
1.570
1.620
1.670
1.720
1.770
1.820
6/32
XC6601
Series
■DROPOUT VOLTAGE CHART
E-1
DROPOUT VOLTAGE 1 (mV)
Vdif 1
NOMINAL
OUTPUT
VOLTAGE (V)
VBIAS=3.0 (V)
Vdif(mV)
VBIAS=3.3 (V)
VBIAS=3.6 (V)
VBIAS=4.2 (V)
VBIAS=5.0 (V)
Vgs(*1)
Vgs
(V)
Vdif(mV)
Vgs
(V)
Vdif(mV)
Vgs
(V)
Vdif(mV)
Vgs
(V)
Vdif(mV)
(V)
VOUT(T)
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
1.75
1.80
TYP. MAX.
TYP. MAX.
TYP. MAX.
TYP. MAX.
TYP. MAX.
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.20
40
300 2.60
250 2.55
200 2.50
150 2.45
100 2.40
35
300 2.90
250 2.85
200 2.80
150 2.75
100 2.70
33
300 3.50
250 3.45
200 3.40
150 3.35
100 3.30
30
300 4.30
250 4.25
200 4.20
150 4.15
100 4.10
27
300
250
200
150
100
50
41
36
34
31
28
42
43
46
48
51
54
57
38
40
41
42
43
46
48
51
54
57
34
35
36
38
40
41
42
43
46
48
31
32
32
32
33
34
34
35
36
38
28
28
29
29
29
30
30
31
31
32
2.35
68
2.65
61
3.25
56
50
49
4.05
4.00
3.95
3.90
3.85
3.80
3.75
3.70
3.65
3.60
3.55
3.50
3.45
3.40
3.35
3.30
3.25
3.20
2.30
2.60
3.20
44
2.25
72
2.55
63
3.15
58
50
51
52
53
54
56
58
59
45
46
47
47
48
48
49
49
2.20
2.50
3.10
2.15
75
2.45
65
3.05
59
2.10
2.40
3.00
2.05
81
2.35
68
2.95
61
2.00
2.30
2.90
1.95
87
2.25
72
2.85
63
1.90
2.20
2.80
1.85
92
2.15
75
2.75
65
1.80
2.10
2.70
61
63
67
70
74
79
94
97
1.75
1.70
2.05
81
2.65
68
2.00
2.60
104 1.65
113 1.60
131 1.55
154 1.50
1.95
87
2.55
72
1.90
2.50
1.85
92
2.45
75
1.80
2.40
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).
7/32
XC6601 Series
■DROPOUT VOLTAGE CHART (Continued)
E-2
DROPOUT VOLTAGE 2 (mV)
Vdif 2
NOMINAL
OUTPUT
VOLTAGE (V)
VBIAS =3.0(V)
VBIAS =3.3(V)
VBIAS =3.6(V)
VBIAS =4.2(V)
Vdif(mV)
VBIAS =5.0(V)
Vdif(mV)
Vgs
Vgs(*1)
Vgs
(V)
Vgs
(V)
Vgs
(V)
Vdif(mV)
Vdif(mV)
Vdif(mV)
(V)
(V)
VOUT (T)
TYP. MAX.
TYP. MAX.
TYP. MAX.
TYP. MAX.
TYP. MAX.
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
1.75
1.80
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.20
81
85
300
250
200
150
131
2.60
2.55
2.50
2.45
2.40
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
1.55
1.50
74
76
300 2.90
250 2.85
200 2.80
150 2.75
68
70
300 3.50
250 3.45
200 3.40
150 3.35
62
63
300
250
200
150
100
4.30
4.25
4.20
4.15
4.10
4.05
4.00
3.95
3.90
3.85
3.80
3.75
3.70
3.65
3.60
3.55
3.50
3.45
3.40
3.35
3.30
3.25
3.20
57
58
300
250
200
150
100
88
90
78
81
72
74
76
78
81
85
88
90
96
101
63
64
65
67
68
70
72
74
76
78
58
58
59
59
60
61
62
63
63
64
117
2.70
2.65
2.60
2.55
2.50
2.45
2.40
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
110
3.30
3.25
3.20
3.15
3.10
3.05
3.00
2.95
2.90
2.85
2.80
2.75
2.70
2.65
2.60
2.55
2.50
2.45
2.40
139
146
154
170
179
192
123
111
98
88
90
91
92
93
94
95
97
98
96
85
127
131
139
146
154
170
179
192
114
117
123
127
131
139
146
154
101
103
106
108
110
111
114
117
101
108
115
122
88
90
96
101
108
115
122
129
135
145
154
165
175
197
206
223
248
293
353
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).
8/32
XC6601
Series
■DROPOUT VOLTAGE CHART (Continued)
E-3
DROPOUT VOLTAGE 3 (mV)
NOMINAL
OUTPUT
Vdif 3
VOLTAGE (V)
VBIAS =3.0(V)
VBIAS =3.3(V)
Vdif(mV)
VBIAS =3.6(V)
VBIAS =4.2(V)
Vdif(mV)
VBIAS =5.0(V)
Vgs(*1)
Vgs
Vgs
(V)
Vgs
Vgs
(V)
Vdif(mV)
Vdif(mV)
TYP. MAX.
Vdif(mV)
(V)
(V)
(V)
VOUT (T)
TYP. MAX.
TYP. MAX.
TYP. MAX.
TYP. MAX.
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
1.75
1.80
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.20
130
134
300
250
200
2.60 115
300 2.90 107
300 3.50
250 3.45
200 3.40
95
96
300
250
200
150
148
4.30
4.25
4.20
4.15
4.10
4.05
4.00
3.95
3.90
3.85
3.80
3.75
3.70
3.65
3.60
3.55
3.50
3.45
3.40
3.35
3.30
3.25
3.20
89
90
300
250
200
150
132
2.55
117
250 2.85
109
2.50
200 2.80
2.45
119
2.75
3.35
167
138
145
153
161
173
184
196
204
216
227
239
264
289
313
181
190
197
204
216
227
239
264
289
313
111
115
117
119
130
134
138
145
153
161
97
90
91
92
93
93
94
95
96
97
98
2.40
2.70
2.65
2.60
2.55
2.50
2.45
2.40
2.35
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
3.30
2.35
130
3.25
170
98
151
153
155
159
163
167
170
176
181
134
137
139
140
141
142
145
148
151
2.30
3.20
2.25
134
3.15
176
101
105
107
109
111
115
117
119
2.20
3.10
2.15
138
3.05
181
2.10
3.00
2.05
145
2.95
190
2.00
2.90
1.95
153
2.85
197
1.90
2.80
1.85
161
2.75
204
1.80
2.70
209
222
239
256
323
344
388
442
1.75
173
2.65
216
1.70
2.60
1.65
184
2.55
227
1.60
2.50
1.55
196
2.45
239
-
-
1.50
2.40
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).
9/32
XC6601 Series
■DROPOUT VOLTAGE CHART (Continued)
E-4
DROPOUT VOLTAGE 4 (mV)
NOMINAL
OUTPUT
Vdif 4
VOLTAGE (V)
VBIAS =3.0(V)
VBIAS =3.3(V)
Vdif(mV)
VBIAS =3.6(V)
VBIAS =4.2(V)
Vdif(mV)
VBIAS =5.0(V)
Vdif(mV)
Vgs(*1)
Vgs
Vgs
(V)
Vgs
(V)
Vgs
(V)
Vdif(mV)
Vdif(mV)
TYP. MAX.
(V)
(V)
VOUT (T)
TYP. MAX.
TYP. MAX.
TYP. MAX.
TYP. MAX.
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
1.75
1.80
2.30
2.25
2.20
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.20
189
195
300
277
2.60 157
300 2.90 146
2.85
300 3.50 129
3.45
300
250
246
4.30 116
300
250
231
2.55
164
4.25
118
272
272
272
272
150
153
157
164
170
189
195
201
206
218
231
250
250
250
250
131
134
136
139
142
146
150
153
157
164
170
2.50
2.80
2.75
2.70
2.65
2.60
2.55
2.50
3.40
3.35
3.30
3.25
3.20
3.15
3.10
4.20
2.45
170
4.15
119
201
206
218
231
248
264
281
-
277
277
277
246
246
246
231
231
231
2.40
4.10
2.35
189
4.05
121
2.30
4.00
2.25
195
3.95
125
2.20
3.90
227
334
2.15
201
272 2.45
277 2.40
250 3.05
248 3.00
246
215
3.85
128
231
189
2.10
3.80
2.05
206
2.35
296
2.95
255
3.75
128
376
219
224
228
234
241
248
191
193
195
198
202
205
2.00
2.30
2.90
3.70
1.95
218
2.25
315
2.85
266
3.65
129
418
1.90
2.20
2.80
3.60
1.85
231
2.15
334
2.75
277
3.55
129
460
1.80
2.10
2.70
3.50
1.75
248
2.05
376
2.65
296
3.45
131
-
-
-
1.70
2.00
2.60
3.40
1.65
264
1.95
418
2.55
315
3.35
134
-
1.60
1.90
2.50
3.30
1.55
281
1.85
460
2.45
334
3.25
136
-
1.50
1.80
2.40
3.20
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).
10/32
XC6601
Series
■OPERATIONAL EXPLANATION
<Voltage Regulator>
The voltage divided by resistors R1 & R2 is compared with the internal reference voltage by the error amplifier. The N-channel
MOSFET which is connected to the VOUT pin is then driven by the subsequent output signal. The output voltage at the VOUT pin is
controlled & stabilized by a system of negative feedback.
VBIAS pin is power supply pin for output voltage control circuit, protection circuit and CE circuit. When output current increase,
the VBIAS pin supplies output current also. VIN pin is connected to a driver transistor and provides output current.
In order to obtain high efficient output current through low on-resistance, please take enough Vgs (=VBIAS – VOUT(T)) of the driver
transistor. Output current triggers operation of constant current limiter and fold-back circuit, heat generation triggers operation of
thermal shutdown circuit, the driver transistor circuit is forced OFF when VBIAS or VIN voltage goes lower than UVLO voltage.
Further, the IC's internal circuitry can be shutdown via the CE pin's signal.
XC6601A series
<Low ESR Capacitor>
With the XC6601 series, a stable output voltage is achievable even if used with low ESR capacitors, as a phase compensation
circuit is built-in. The output capacitor (CL) should be connected as close to VOUT pin and VSS pin to obtain stable phase
compensation. Values required for the phase compensation are as the table below.
For a stable power input, please connect an bias capacitor (CBIAS ) of 1.0μF between the V BIAS pin and the VSS pin. Also,
please connect an input capacitor (CIN) of 1.0μF between the VIN pin and the VSS pin. In order to ensure the stable phase
compensation while avoiding run-out of values, please use the capacitor (CBIAS, CIN, CL ) which does not depend on bias or
temperature too much. The table below shows recommended values of CBIAS, CIN, CL.
BIAS CAPACITOR
CBIAS
INPUT CAPACITOR
CIN
OUTPUT CAPACITOR
CL
SETTING VOLTAGE
0.7V~1.8V
CBIAS=1.0μF
CIN=1.0μF
CL=4.7μF
Recommended Values of CBIAS, CIN, CL
11/32
XC6601 Series
■OPERATIONAL EXPLANATION (Continued)
<CL High Speed Auto-Discharge>
XC6601 series can quickly discharge the electric charge at the output capacitor (CL) when a low signal to the EN pin which
enables a whole IC circuit put into OFF state, is inputted via the N-channel transistor located between the VOUT pin and the VSS
pin. When the IC is disabled, electric charge at the output capacitor (CL) is quickly discharged so that it could avoids malfunction.
At that time, CL discharge resistance is depended on a bias voltage. Discharge time of the output capacitor (CL) is set by the CL
auto-discharge resistance (R) and the output capacitor (CL). By setting time constant of a CL auto-discharge resistance value [R]
and an output capacitor value (CL) as τ(τ=C x R), the output voltage after discharge via the N channel transistor is calculated
by the following formulas.
V = VOUT x e –t/τ, or t=τln( VOUT(E) / V )
V : Output voltage after discharge, VOUT(E) : Output voltage, t: Discharge time,
τ: CL auto-discharge resistance R×Output capacitor (CL) value C
<Current Limit, Short-Circuit Protection>
The XC6601 series’ fold-back circuit operates as an output current limiter and a short protection of the output pin. When the load
current reaches the current limit level, the fixed current limiter circuit operates and output voltage drops. When the output pin is
shorted to the VSS level, current flows about 80mA.
<Thermal Shutdown Circuit (TSD) >
When the junction temperature of the built-in driver transistor reaches the temperature limit level (150℃ TYP.), the thermal
shutdown circuit operates and the driver transistor will be set to OFF. The IC resumes its operation when the thermal shutdown
function is released and the IC’s operation is automatically restored because the junction temperature drops to the level of the
thermal shutdown release temperature (125℃ TYP.).
<Under Voltage Lock Out (UVLO) >
When the VBIAS pin voltage drops below 2.0V (TYP.) or VIN pin voltage drops below 0.4V (TYP.), the output driver transistor is
forced OFF by UVLO function to prevent false output caused by unstable operation of the internal circuitry. When the VBIAS pin
voltage rise at 2.2V (TYP.) or the VIN pin voltage rises at 0.4V (TYP.), the UVLO function is released. The driver transistor is
turned in the ON state and start to operate voltage regulation.
<CE Pin>
The IC internal circuitry can be shutdown via the signal from the CE pin with the XC6601 series. In shutdown mode, output at the
VOUT pin will be pulled down to the VSS level via R1 & R2. However, as for the XC6601 series, the CL auto-discharge resistor is
connected in parallel to R1 and R2 while the power supply is applied to the VIN pin. Therefore, time until the VOUT pin reaches the
VSS level becomes short.
The CE pin of XC6601A has pull-down circuitry so that CE input current increase during IC operation. The CE pin of XC6601B
does not have pull-down circuitry so that logic is not fixed when the CE pin is open. If the CE pin voltage is taken from VBIAS pin
or VSS pin then logic is fixed and the IC will operate normally. However, supply current may increase as a result of through current
in the IC's internal circuitry when medium voltage is input.
■NOTE ON USE
1. Please use this IC within the stated absolute maximum ratings. The IC is liable to malfunction should the ratings be
exceeded.
2. Where wiring impedance is high, operations may become unstable due to noise and/or phase lag depending on output
current. Please keep the resistance low between VBIAS and VSS wiring or VIN and VSS wiring in particular.
3. Please wire the bias capacitor (CBIAS), input capacitor (CIN) and the output capacitor (CL) as close to the IC as possible.
4. Capacitance values of these capacitors (CBIAS, CIN, CL) are decreased by the influences of bias voltage and ambient
temperature. Care shall be taken for capacitor selection to ensure stability of phase compensation from the point of ESR
influence.
5. In case of the output capacitor more than CL=22μF is used, ringing of input current occurs when rising time.
6.
VIN and CE should be applied at least 10μs after the bias voltage VBIAS reaches the requested voltage.
If VIN and CE are applied within 10μs, inrush current like 1A may occurs.
12/32
XC6601
Series
■TEST CIRCUITS
Circuit ①
Circuit ②
13/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS
(1) Output Voltage vs. Output Current
XC6601B071MR
XC6601B071MR
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
C =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
IN
VBIAS=3.6V, VIN=1.0V
VBIAS=3.6V, Ta=25℃
0.8
0.8
0.6
0.6
VIN=1.0V
VIN=1.2V
VIN=1.5V
Ta=-40℃
Ta=25℃
Ta=85℃
0.4
0.4
0.2
0.0
0.2
0.0
0
100 200 300 400 500 600 700
Output Current: IOUT(mA)
0
100 200 300 400 500 600 700
Output Current: IOUT(mA)
XC6601B121MR
XC6601B121MR
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN=1.5V
C =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
IN
VBIAS=3.6V, Ta=25℃
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Ta=-40℃
Ta=25℃
Ta=85℃
VIN=1.3V
VIN=1.5V
VIN=1.8V
0
100 200 300 400 500 600 700
Output Current: IOUT(mA)
0
100 200 300 400 500 600 700
Output Current: IOUT(mA)
XC6601B181MR
XC6601B181MR
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN=2.1V
C =CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
IN
VBIAS=3.6V, Ta=25℃
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VIN=1.9V
VIN=2.1V
VIN=2.3V
Ta=-40℃
Ta=25℃
Ta=85℃
0
100 200 300 400 500 600 700
Output Current: IOUT(mA)
0
100 200 300 400 500 600 700
Output Current: IOUT(mA)
14/32
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(2) Output Voltage vs. Bias Voltage
XC6601x071
XC6601x071
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN=1.0V, Ta=25℃
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN=1.0V, Ta=25℃
0.9
0.8
0.7
0.6
0.5
0.9
0.8
0.7
0.6
0.5
IOUT=0mA
IOUT=0mA
IOUT=30mA
IOUT=100mA
IOUT=30mA
IOUT=100mA
2.5
2.5
3
3
3.5
4
4.5
5
5.5
6
1.7
1.7
1.8
1.9
2.1
2.3
2.5
Bias Voltage: VBIAS(V)
Bias Voltage: VBIAS(V)
XC6601x121
XC6601x121
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN=1.5V, Ta=25℃
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN=1.5V, Ta=25℃
1.4
1.3
1.2
1.1
1.0
1.4
1.3
1.2
1.1
1.0
IOUT=0mA
IOUT=0mA
IOUT=30mA
IOUT=100mA
IOUT=30mA
IOUT=100mA
1.9
2.1
2.3
2.5
3
3.5
4
4.5
5
5.5
6
Bias Voltage: VBIAS(V)
Bias Voltage: VBIAS(V)
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN=2.1V, Ta=25℃
VIN=2.1V, Ta=25℃
2.0
1.9
1.8
1.7
1.6
2.0
1.9
1.8
1.7
1.6
IOUT=0mA
IOUT=0mA
IOUT=30mA
IOUT=100mA
IOUT=30mA
IOUT=100mA
2
2.2
2.4
2.6
2.8
3
3.5
4
4.5
5
5.5
6
Bias Voltage: VBIAS(V)
Bias Voltage: VBIAS(V)
15/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(3) Output Voltage vs. Input Voltage
XC6601x071
XC6601x071
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, Ta=25℃
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, Ta=25℃
0.9
0.8
0.7
0.6
0.5
0.9
0.8
0.7
0.6
0.5
IOUT=0mA
IOUT=0mA
IOUT=30mA
IOUT=100mA
IOUT=30mA
IOUT=100mA
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6 2.8
3
0.5
0.6
0.7
0.8
0.9
Bias Voltage: VBIAS(V)
Bias Voltage: VBIAS(V)
XC6601x121
XC6601x121
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, Ta=25℃
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, Ta=25℃
1.4
1.3
1.2
1.1
1.0
1.4
1.3
1.2
1.1
1.0
IOUT=0mA
IOUT=0mA
IOUT=30mA
IOUT=100mA
IOUT=30mA
IOUT=100mA
1
1.1
1.2
1.3
1.4
1.4 1.6 1.8
2
2.2 2.4 2.6 2.8
3
Bias Voltage: VBIAS(V)
Bias Voltage: VBIAS(V)
XC6601x181
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, Ta=25℃
VBIAS=3.6V, Ta=25℃
2.0
1.9
1.8
1.7
1.6
2.0
1.9
1.8
1.7
1.6
IOUT=0mA
IOUT=0mA
IOUT=30mA
IOUT=100mA
IOUT=30mA
IOUT=100mA
1.6
1.7
1.8
1.9
2
2
2.2
2.4
2.6
2.8
3
Bias Voltage: VBIAS(V)
Bias Voltage: VBIAS(V)
16/32
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(4)Dropout Voltage vs. Output Current
XC6601B121MR (Vgs(*1)=2.4V)
XC6601B121MR
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
Ta=25℃
300
250
200
150
100
50
400
300
200
100
0
VBIAS=3.0V
Ta=-40℃
Ta=25℃
Ta=85℃
VBIAS=3.3V
VBIAS=3.6V
VBIAS=4.2V
VBIAS=5.0V
0
0
100
200
300
400
0
100
200
300
400
ꢀOutput Current: IOUT(mA)
ꢀOutput Current: IOUT(mA)
XC6601B121MR (Vgs(*1)=1.8V)
XC6601B121MR (Vgs(*1)=3.0V)
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.0V
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=4.2V
400
300
200
100
0
400
300
200
100
0
Ta=-40℃
Ta=-40℃
Ta=25℃
Ta=85℃
Ta=25℃
Ta=85℃
0
100
200
300
400
0
100
200
300
400
ꢀOutput Current: IOUT(mA)
ꢀOutput Current: IOUT(mA)
XC6601B121MR (Vgs(*1)=2.1V)
XC6601B121MR (Vgs(*1)=3.8V)
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.3V
VBIAS=5.0V
400
300
200
100
0
400
300
200
100
0
Ta=-40℃
Ta=-40℃
Ta=25℃
Ta=85℃
Ta=25℃
Ta=85℃
0
100
200
300
400
0
100
200
300
400
ꢀOutput Current: IOUT(mA)
ꢀOutput Current: IOUT(mA)
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).
A value of the dropout voltage is determined by the value of the Vgs.
17/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(6) Supply Input Current vs. Input Voltage
(5) Supply Bias Current vs. Bias Voltage
XC6601x071
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN=1.0V
XC6601x071
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V
40
30
20
2.0
1.5
1.0
0.5
0.0
Ta=-40℃
Ta=25℃
Ta=85℃
Ta=-40℃
10
Ta=25℃
Ta=85℃
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
Bias Voltage: VBIAS(V)
Input Voltage: VIN(V)
XC6601x121
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN=1.5V
XC6601x121
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V
40
30
20
10
0
3.0
Ta=-40℃
Ta=25℃
Ta=85℃
2.5
2.0
1.5
1.0
0.5
0.0
Ta=-40℃
Ta=25℃
Ta=85℃
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
Bias Voltage: VBIAS(V)
Input Voltage: VIN(V)
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN=2.1V
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Ta=-40℃
Ta=25℃
Ta=85℃
Ta=-40℃
Ta=25℃
Ta=85℃
0
1
2
3
4
5
6
0
0.5
1
1.5
2
2.5
3
Bias Voltage: VBIAS(V)
Input Voltage: VIN(V)
18/32
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(7) Output Voltage vs. Ambient Temperature
(8) Supply Bias Current vs. Ambient Temperature
XC6601x071
XC6601x071
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN=1.0V
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN=1.0V
0.73
0.72
0.71
0.70
40
35
30
25
20
15
0.69
IOUT=1mA
IOUT=30mA
0.68
IOUT=100mA
0.67
-50
-25
0
25
50
75
100
-50
-25
0
25
50
75
100
Ambient Temperature: Ta(℃)
Ambient Temperature: Ta(℃)
XC6601x121
XC6601x121
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN=1.5V
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN=1.5V
1.23
1.22
1.21
1.20
1.19
1.18
1.17
40
35
30
25
20
15
IOUT=1mA
IOUT=30mA
IOUT=100mA
-50
-25
0
25
50
75
100
-50
-25
0
25
50
75
100
Ambient Temperature: Ta(℃)
Ambient Temperature: Ta(℃)
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN=2.1V
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN=2.1V
1.83
1.82
1.81
1.80
1.79
1.78
1.77
40
35
30
25
20
15
IOUT=1mA
IOUT=30mA
IOUT=100mA
-50
-25
0
25
50
75
100
-50 -25
0
25
50
75
100
Ambient Temperature: Ta(℃)
Ambient Temperature: Ta(℃)
19/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(9) Supply Input Current vs. Ambient Temperature
XC6601x071
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN=1.0V
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25
50
75
100
Ambient Temperature: Ta(℃)
XC6601x121
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN=1.5V
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25
50
75
100
Ambient Temperature: Ta(℃)
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN=2.1V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
Ambient Temperature: Ta(℃)
20/32
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(10) Bias Transient Response
XC6601x071
XC6601x071
CIN =1.0μF(ceramic), CBIAS=0μF(ceramic), CL=4.7μF(ceramic)
IN=1.0V, IOUT=30mA, tr=tf=5.0μsec, Ta=25
CIN=1.0μF(ceramic), CBIAS=0μF(ceramic), CL=4.7μF(ceramic)
IN=1.0V, IOUT=200mA, tr=tf=5.0μsec, Ta=25
V
V
℃
℃
1.1
1.0
0.9
0.8
0.7
0.6
0.5
5
4
3
2
1
0
-1
1.1
1.0
0.9
0.8
0.7
0.6
0.5
5
4
3
2
1
0
-1
Bias Voltage
Bias Voltage
Output Voltage
Output Voltage
Time (40μs / div)
Time (40μs / div)
XC6601x121
CIN =1.0μF(ceramic), CBIAS=0μF(ceramic), CL=4.7μF(ceramic)
XC6601x121
CIN=1.0μF(ceramic), CBIAS=0μF(ceramic), CL=4.7μF(ceramic)
VIN=1.5V, IOUT=200mA, tr=tf=5.0μsec, Ta=25
℃
V
IN=1.5V, IOUT=30mA, tr=tf=5.0μsec, Ta=25
℃
1.6
1.5
1.4
1.3
1.2
1.1
1.0
5
4
3
2
1
0
-1
1.6
1.5
1.4
1.3
1.2
1.1
1.0
5
4
3
2
1
0
-1
Bias Voltage
Bias Voltage
Output Voltage
Output Voltage
Time (40μs / div)
Time (40μs / div)
XC6601x181
CIN =1.0μF(ceramic), CBIAS=0μF(ceramic), CL=4.7μF(ceramic)
XC6601x181
CIN=1.0μF(ceramic), CBIAS=0μF(ceramic), CL=4.7μF(ceramic)
VIN=2.1V, IOUT=30mA, tr=tf=5.0μsec, Ta=25
VIN=2.1V, IOUT=200mA, tr=tf=5.0μsec, Ta=25
℃
℃
2.2
2.1
2.0
1.9
1.8
1.7
1.6
5
4
3
2
1
0
-1
2.1
2.0
1.9
1.8
1.7
1.6
1.5
5
4
3
2
1
0
-1
Bias Voltage
Bias Voltage
Output Voltage
Output Voltage
Time (40μs / div)
Time (40μs / div)
21/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(11) Input Transient Response
XC6601x071
XC6601x071
CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
C
C
C
IN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25
℃
VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25
℃
1.1
1.0
0.9
0.8
0.7
0.6
0.5
3
1.1
1.0
0.9
0.8
0.7
0.6
0.5
3
Input Voltage
Input Voltage
2
2
1
1
0
0
-1
-2
-3
-1
-2
-3
Output Voltage
Output Voltage
Time (20μs / div)
Time (20μs / div)
XC6601x121
IN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
XC6601x121
IN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
C
VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25
VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25
℃
℃
1.6
1.5
1.4
1.3
1.2
1.1
1.0
4
1.6
1.5
1.4
1.3
1.2
1.1
1.0
4
Input Voltage
Input Voltage
3
3
2
2
1
1
0
0
Output Voltage
Output Voltage
-1
-2
-1
-2
Time (20μs / div)
Time (20μs / div)
XC6601x181
IN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
XC6601x181
IN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
C
V
BIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25
℃
V
BIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25
℃
2.2
2.1
2.0
1.9
1.8
1.7
1.6
5
4
3
2
1
0
-1
2.2
2.1
2.0
1.9
1.8
1.7
1.6
5
4
3
2
1
0
-1
Input Voltage
Input Voltage
Output Voltage
Output Voltage
Time (20μs / div)
Time (20μs / div)
22/32
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(12) Load Transient Response
XC6601B071MR
XC6601B071MR
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
V
BIAS=3.6V, VIN =1.0V, tr=tf=5.0μsec, Ta=25
℃
VBIAS=3.6V, VIN=1.0V, tr=tf=5.0μsec, Ta=25
℃
0.9
0.7
0.5
0.3
0.1
-0.1
500
400
300
200
100
0
0.9
0.7
0.5
0.3
0.1
-0.1
500
400
300
200
100
0
Output Voltage
Output Voltage
200mA
10mA
Output Current
Output Current
100mA
10mA
Time (45μs / div)
Time (45μs / div)
XC6601B121MR
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
XC6601B121MR
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, VIN=1.5V, tr=tf=5.0μsec, Ta=25
VBIAS=3.6V, VIN =1.5V, tr=tf=5.0μsec, Ta=25
℃
℃
1.4
1.2
1.0
0.8
0.6
0.4
500
400
300
200
100
0
1.4
1.2
1.0
0.8
0.6
0.4
500
400
300
200
100
0
Output Voltage
Output Voltage
200mA
Output Current
Output Current
100mA
10mA
10mA
Time (45μs / div)
Time (45μs / div)
XC6601B181MR
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
XC6601B181MR
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
V
BIAS=3.6V, VIN=2.1V, tr=tf=5.0μsec, Ta=25
℃
V
BIAS=3.6V, VIN =2.1V, tr=tf=5.0μsec, Ta=25
℃
2.0
1.8
1.6
1.4
1.2
1.0
500
400
300
200
100
0
2.0
1.8
1.6
1.4
1.2
1.0
500
400
300
200
100
0
Output Voltage
Output Voltage
200mA
10mA
Output Current
Output Current
100mA
10mA
Time (45μs / div)
Time (45μs / div)
23/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(13) CE Rising Response Time
XC6601x071
XC6601x071
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN=1.0V, VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25
C
IN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN=1.0V, VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25
℃
℃
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
3
3
CE Input Voltage
CE Input Voltage
2
2
1
1
0
0
Output Voltage
Output Voltage
-1
-2
-1
-2
Time (100μs / div)
Time (100μs / div)
XC6601x121
XC6601x121
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN=1.5V, VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25
VIN=1.5V, VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25
℃
℃
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
3
3
CE Input Voltage
CE Input Voltage
Output Voltage
2
2
1
1
Output Voltage
0
0
-1
-2
-1
-2
Time (100μs / div)
Time (100μs / div)
XC6601x181
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
CIN=CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VIN=2.1V, VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25
VIN=2.1V, VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25
℃
℃
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
3
3
CE Input Voltage
CE Input Voltage
2
2
1
1
0
0
Output Voltage
Output Voltage
-1
-2
-1
-2
Time (100μs / div)
Time (100μs / div)
24/32
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(14) VIN Rising Response Time
XC6601x071
XC6601x071
CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
BIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25
CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
BIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25
V
V
℃
℃
2.5
2.0
1.5
1.0
0.5
0.0
3
2.5
2.0
1.5
1.0
0.5
0.0
3
2
2
Input Voltage
Input Voltage
1
1
0
0
Output Voltage
Output Voltage
-1
-2
-1
-2
Time (100μs / div)
Time (100μs / div)
XC6601x121
XC6601x121
CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25
VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25
℃
℃
2.5
2.0
1.5
1.0
0.5
0.0
3
2.5
2.0
1.5
1.0
0.5
0.0
3
Input Voltage
Input Voltage
2
2
1
1
Output Voltage
Output Voltage
0
0
-1
-2
-1
-2
Time (100μs / div)
Time (100μs / div)
XC6601x181
XC6601x181
CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
CIN=0.1μF(ceramic), CBIAS=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6V, IOUT=30mA, tr=tf=5.0μsec, Ta=25
VBIAS=3.6V, IOUT=200mA, tr=tf=5.0μsec, Ta=25
℃
℃
2.5
2.0
1.5
1.0
0.5
0.0
3
2.5
2.0
1.5
1.0
0.5
0.0
3
Input Voltage
Input Voltage
2
2
1
1
0
0
-1
-2
-1
-2
Output Voltage
Output Voltage
Time (100μs / div)
Time (100μs / div)
25/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(16) Input Voltage Ripple Rejection Rate
(15) Bias Voltage Ripple Rejection Rate
XC6601x071
XC6601x071
CBIAS=0μF, CIN=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6VDC+0.2Vp-pAC, VIN=1.0V, IOUT=30mA, Ta=25℃
CBIAS=1.0μF(ceramic), CIN=0μF, CL=4.7μF(ceramic)
VBIAS=3.6V, VIN=1.0VDC+0.2Vp-pAC, IOUT=30mA, Ta=25℃
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
0.01
0.1
1
10
100 1000 10000
0.01
0.1
0.1
0.1
1
10
100 1000 10000
Frequency (kHz)
Frequency (kHz)
XC6601x121
XC6601x121
CBIAS=0μF, CIN=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6VDC+0.2Vp-pAC, VIN=1.5V, IOUT=30mA, Ta=25℃
CBIAS=1.0μF(ceramic), CIN=0μF, CL=4.7μF(ceramic)
VBIAS=3.6V, VIN=1.5VDC+0.2Vp-pAC, IOUT=30mA, Ta=25℃
80
80
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
0.01
1
10
100 1000 10000
0.01
0.1
1
10
100 1000 10000
Frequency (kHz)
Frequency (kHz)
XC6601x181
XC6601x181
CBIAS=1.0μF(ceramic), CIN=0μF, CL=4.7μF(ceramic)
VBIAS=3.6V, VIN=2.1VDC+0.2Vp-pAC, IOUT=30mA, Ta=25℃
CBIAS=0μF, CIN=1.0μF(ceramic), CL=4.7μF(ceramic)
VBIAS=3.6VDC+0.2Vp-pAC, VIN=2.1V, IOUT=30mA, Ta=25℃
80
80
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
0.01
1
10
100 1000 10000
0.01
0.1
1
10
100 1000 10000
Frequency (kHz)
Frequency (kHz)
26/32
XC6601
Series
■PACKAGING INFORMATION
●USP-6C
●USP-6C Reference Pattern Layout
(UNIT : mm)
2.4
0.45
0.45
1
2
3
6
5
4
0.05
0.05
1.0
●USP-6C Reference Metal Mask Design
2.3
0.35
0.35
1
2
3
6
5
4
0.15
0.15
0.8
Thickness of solder paste: 120μm (reference)
●SOT-25
●SOT-89-5
(UNIT : mm)
(UNIT : mm)
*The side of pins are not gilded, but
nickel is used: Sn 5~15μm
27/32
XC6601 Series
■PACKAGING INFORMATION (Continued)
●
USP-6C Power Dissipation
Power dissipation data for the USP-6C is shown in this page.
The value of power dissipation varies with the mount board conditions.
Please use this data as one of reference data taken in the described condition.
1. Measurement Condition (Reference data)
Condition: Mount on a board
Ambient:
Natural convection
Soldering: Lead (Pb) free
Board:
Dimensions 40 x 40 mm (1600 mm2 in one side)
Copper (Cu) traces occupy 50% of the board area
In top and back faces
て
Package heat-sink is tied to the copper traces
Glass Epoxy (FR-4)
Material:
Thickness: 1.6 mm
Through-hole: 4 x 0.8 Diameter
2. Power Dissipation vs. Operating temperature
Evaluation Board (Unit: mm)
Board Mount (Tj max = 125℃)
Ambient Temperature(℃)
Power Dissipation Pd(mW) Thermal Resistance (℃/W)
25
85
1000
100.00
400
Pd vs. Ta
1200
1000
800
600
400
200
0
25
45
65
85
105
125
Ambient Temperature Ta (℃)
28/32
XC6601
Series
■PACKAGING INFORMATION (Continued)
●
SOT-25 Power Dissipation
Power dissipation data for the SOT-25 is shown in this page.
The value of power dissipation varies with the mount board conditions.
Please use this data as one of reference data taken in the described condition.
2. Measurement Condition (Reference data)
Condition: Mount on a board
Ambient:
Natural convection
Soldering: Lead (Pb) free
Board:
Dimensions 40 x 40 mm (1600 mm2 in one side)
Copper (Cu) traces occupy 50% of the board area
In top and back faces
Package heat-sink is tied to the copper traces
(Board of SOT-26 is used.)
Material:
Glass Epoxy (FR-4)
Thickness: 1.6 mm
Through-hole: 4 x 0.8 Diameter
2. Power Dissipation vs. Operating temperature
Evaluation Board (Unit: mm)
Board Mount (Tj max = 125℃)
Ambient Temperature(℃)
Power Dissipation Pd(mW) Thermal Resistance (℃/W)
25
85
600
240
166.67
Pd vs. Ta
700
600
500
400
300
200
100
0
25
45
65
85
105
125
Ambient Temperature Ta (℃)
29/32
XC6601 Series
■PACKAGING INFORMATION (Continued)
●
SOT-89-5 Power Dissipation
Power dissipation data for the SOT-89-5 is shown in this page.
The value of power dissipation varies with the mount board conditions.
Please use this data as one of reference data taken in the described condition.
3. Measurement Condition (Reference data)
Condition: Mount on a board
Ambient:
Natural convection
Soldering: Lead (Pb) free
Board:
Dimensions 40 x 40 mm (1600 mm2 in one side)
て
Copper (Cu) traces occupy 50% of the board area
In top and back faces
Package heat-sink is tied to the copper traces
Glass Epoxy (FR-4)
Material:
Thickness: 1.6 mm
Through-hole: 5 x 0.8 Diameter
2. Power Dissipation vs. Operating temperature
Evaluation Board (Unit: mm)
Board Mount (Tj max = 125℃)
Ambient Temperature(℃)
Power Dissipation Pd(mW) Thermal Resistance (℃/W)
25
85
1300
76.92
520
Pd vs. Ta
1400
1200
1000
800
600
400
200
0
25
45
65
85
105
125
Ambient Temperature Ta (℃)
30/32
XC6601
Series
■MARKING RULE
●SOT25, 89-5, USP6C
① Represents product series
SOT25
MARK
9
PRODUCT SERIES
XC6601******
5
4
①
②
③
④
⑤
② Represents type of regulators
MARK
OUTPUT VOLTAGE RANGE
1
2
3
A
B
XC6601A*****
XC6601B*****
SOT89-5
2
5
4
③ Represents output voltage
OUTPUT
MARK
OUTPUT
VOLTAGE (V)
MARK
VOLTAGE (V)
0
1
2
3
4
5
6
7
8
9
A
B
C
D
E
0.7
0.75
0.8
F
H
K
L
1.45
1.5
1.55
0.85
0.9
1.6
2
1
3
M
N
P
R
S
T
1.65
0.95
1.0
1.7
USP6C
1.75
1.05
1.1
1.8
-
-
-
-
-
-
-
1.15
1.2
U
V
X
Y
Z
1.25
1.3
1.35
1.4
④,⑤ Represents production lot number
01~09、0A~0Z、11・・・9Z、A1~A9、
AA・・・Z9、ZA~ZZ repeated
(G,I,J,O,Q,W excepted)
*No character inversion used.
31/32
XC6601 Series
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
32/32
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