2SC3325-Y [TOSHIBA]

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2SC3325-Y


型号：	2SC3325-Y
厂家：	TOSHIBA SEMICONDUCTOR
描述：	暂无描述
文件：	总4页 (文件大小：133K)
下载：	下载PDF数据表文档文件

2SC3325-Y(T5LKEHIF

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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2 TOSHIBA

2SC3325-Y(T5LNISAF

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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1 TOSHIBA

2SC3325-Y(T5LXNV,F

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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0 TOSHIBA

2SC3325-Y(TE85L,F)

TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal

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0 TOSHIBA

2SC3325-Y(TE85L,F)

TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal

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0 TOSHIBA

2SC3325-Y,LF

TRANS NPN 50V 0.5A S-MINI

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0 TOSHIBA

2SC3325-YLF(T

Small Signal Bipolar Transistor

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1 TOSHIBA

2SC3325YTE85L

TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal

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1 TOSHIBA

2SC3325YTE85L

TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal

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1 TOSHIBA

2SC3325YTE85R

TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal

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1 TOSHIBA

2SC3326

High emitter-base voltage: VEBO = 25 V (min). High DC current gain: hFE = 200 1200.

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41 TYSEMI

2SC3326

Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications

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97 TOSHIBA

2SC3326

Silicon NPN Epitaxial

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58 KEXIN

2SC3326

NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)

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233 TOSHIBA

2SC3326_07

Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications

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28 TOSHIBA

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