2SC5108-Y,LF [TOSHIBA]

RF Small Signal Bipolar Transistor;
2SC5108-Y,LF
型号: 2SC5108-Y,LF
厂家: TOSHIBA    TOSHIBA
描述:

RF Small Signal Bipolar Transistor

晶体 小信号双极晶体管 射频小信号双极晶体管 光电二极管 放大器
文件: 总6页 (文件大小:658K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC5108  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
2SC5108  
For VCO Application  
Unit: mm  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
20  
10  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Base current  
3
V
I
15  
mA  
mA  
mW  
°C  
°C  
B
Collector current  
I
30  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
100  
125  
55~125  
C
T
j
T
stg  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
TOSHIBA  
2-2H1A  
Weight: 2.4 mg (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 10 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
V
V
0.1  
0.1  
μA  
μA  
CBO  
CB  
EB  
E
I
= 1 V, I = 0  
C
EBO  
h
FE  
DC current gain  
V
= 5 V, I = 5 mA  
80  
240  
CE  
C
(Note 1)  
Transition frequency  
Insertion gain  
f
V
V
= 5 V, I = 5 mA  
4
6
GHz  
dB  
pF  
T
CE  
CE  
C
2
S  
= 5 V, I = 5 mA, f = 1 GHz  
7
11  
21e  
C
Output capacitance  
C
0.7  
0.5  
5.5  
ob  
V
V
= 5 V, I = 0, f = 1 MHz  
(Note 2)  
CB  
CB  
E
Reverse transfer capacitance  
Collector-base time constant  
C
0.9  
10  
pF  
re  
C
rbb’  
= 5 V, I = 3 mA, f = 30 MHz  
ps  
c
C
Note 1:  
Note 2:  
h
classification O: 80~160, Y: 120~240  
FE  
C
is measured by 3 terminal method with capacitance bridge.  
re  
1
2007-11-01  
2SC5108  
Marking  
2
2007-11-01  
2SC5108  
3
2007-11-01  
2SC5108  
S-Parameter Z = 50 Ω, Ta = 25°C  
O
V
CE  
= 5 V, I = 5 mA  
C
Frequency  
(MHz)  
200  
S11  
S21  
S12  
S22  
Mag.  
0.684  
0.438  
0.301  
0.226  
0.182  
0.159  
0.147  
0.145  
0.149  
0.161  
Ang.  
47.0  
Mag.  
10.116  
7.260  
5.388  
4.227  
3.494  
2.988  
2.632  
2.345  
2.128  
1.967  
Ang.  
136.8  
112.9  
99.1  
90.0  
82.7  
76.9  
71.2  
66.0  
61.4  
57.1  
Mag.  
0.049  
0.072  
0.090  
0.107  
0.124  
0.142  
0.163  
0.182  
0.200  
0.219  
Ang.  
63.1  
56.5  
56.5  
57.6  
58.8  
59.6  
59.9  
59.2  
58.4  
58.1  
Mag.  
0.765  
0.553  
0.452  
0.402  
0.374  
0.359  
0.348  
0.339  
0.329  
0.318  
Ang.  
29.5  
37.8  
39.1  
39.0  
38.9  
39.4  
40.7  
43.2  
46.3  
49.5  
400  
79.2  
600  
101.2  
119.2  
136.2  
153.3  
170.3  
174.4  
800  
1000  
1200  
1400  
1600  
1800  
2000  
162.6  
150.9  
4
2007-11-01  
2SC5108  
5
2007-11-01  
2SC5108  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2007-11-01  

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