2SD1221Y(2-7B1A) [TOSHIBA]

TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal;
2SD1221Y(2-7B1A)
型号: 2SD1221Y(2-7B1A)
厂家: TOSHIBA    TOSHIBA
描述:

TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal

文件: 总4页 (文件大小:153K)
中文:  中文翻译
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2SD1221  
TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process)  
2SD1221  
Audio Frequency Power Amplifier Application  
Unit: mm  
Low collector saturation voltage  
: V = 4.0 V (typ.) (I = 3 A, I = 0.3 A)  
CE (sat)  
C
B
High power dissipation: P = 20 W (Tc = 25°C)  
C
Complementary to 2SB906  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
V
V
V
A
A
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
60  
7
I
3
0.5  
C
Base current  
I
B
Ta = 25°C  
Tc = 25°C  
1.0  
Collector power  
dissipation  
P
W
C
20  
Junction temperature  
T
150  
°C  
°C  
j
JEDEC  
JEITA  
Storage temperature range  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-7B1A  
Weight: 0.36 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/Derating Concept and Methods) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
JEDEC  
JEITA  
TOSHIBA  
2-7J1A  
Weight: 0.36 g (typ.)  
1
2006-11-21  
2SD1221  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 60 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
60  
100  
100  
μA  
μA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= 7 V, I = 0  
C
EBO  
(BR) CEO  
Collector-emitter breakdown voltage  
V
I = 50 mA, I = 0  
C B  
h
FE (1)  
(Note)  
V
V
= 5 V, I = 0.5 A  
60  
300  
CE  
C
DC current gain  
h
= 5 V, I = 3 A  
20  
0.4  
0.7  
3.0  
70  
1.0  
1.0  
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= 3 A, I = 0.3 A  
V
V
CE (sat)  
C
B
V
V
V
V
= 5 V, I = 0.5 A  
C
BE  
CE  
CE  
CB  
Transition frequency  
f
= 5 V, I = 0.5 A  
MHz  
pF  
T
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
ob  
E
Turn-on time  
t
0.8  
1.5  
0.8  
on  
OUTPUT  
= 30 V  
20 μs  
I
I
B1  
INPUT  
Switching time  
μs  
Storage time  
Fall time  
t
stg  
B2  
I
B2  
V
CC  
t
f
I
= I = 0.2 A, DUTY CYCLE 1%  
B2  
B1  
Note: h classification O: 60 to 120, Y: 100 to 200, GR: 150 to 300  
FE  
Marking  
D1221  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
Characteristics  
indicator  
2
2006-11-21  
2SD1221  
I
– V  
I – V  
C BE  
C
CE  
3.0  
2.0  
1.0  
0
90  
80  
70  
Common emitter  
Tc = 25°C  
Common emitter  
V = 5 V  
CE  
3.0  
2.0  
1.0  
0
60  
50  
40  
30  
20  
= 10 mA  
I
B
Tc = 100°C  
25  
25  
0
0
2
4
6
8
0
0.4  
0.8  
1.2  
1.6  
Collector-emitter voltage  
V
(V)  
Base-emitter voltage  
V
(V)  
CE  
BE  
h
– I  
V
– I  
CE (sat) C  
FE  
C
1
500  
300  
Common emitter  
= 5 V  
Common emitter  
I /I = 10  
C B  
V
CE  
0.5  
0.3  
Tc = 100°C  
25  
100  
25  
Tc = 100°C  
25  
0.1  
50  
30  
0.05  
25  
0.02  
10  
0.03  
0.1  
0.3  
1
3
0.03  
0.1  
0.3  
1
3
Collector current  
I
C
(A)  
Collector current  
I
C
(A)  
Safe Operating Area  
10  
P
Ta  
C
I
max (pulsed)*  
C
24  
20  
16  
12  
8
1 ms*  
5
3
(1) Tc = Ta infinite heat sink  
(2) Ceramic substrate  
50 × 50 × 0.8 mm  
10 ms*  
100 ms*  
(1)  
I
max (continuous)  
C
(3) No heat sink  
DC operation  
(Tc = 25°C)  
1
0.5  
0.3  
*: Single nonrepetitive pulse  
Tc = 25°C  
4
Curves must be derated linearly with  
increase in temperature.  
(2)  
(3)  
V
max  
CEO  
30  
0
0
0.1  
1
25  
50  
75  
100  
125  
150  
175  
3
10  
100  
Ambient temperature Ta (°C)  
Collector-emitter voltage  
V
(V)  
CE  
3
2006-11-21  
2SD1221  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
4
2006-11-21  

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