概述
数据手册2SD2131_06 概述
Silicon NPN Triple Diffused Type (Darlington) 硅NPN三重扩散型（达林顿）
2SD2131_06 数据手册
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PDF下载2SD2131
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2131
High-Power Switching Applications
Unit: mm
Hammer Drive, Pulse Motor Drive Applications
•
•
•
•
High DC current gain: h
= 2000 (min) (V
= 3 V, I = 3 A)
FE
CE C
Low saturation voltage: V
= 1.5 V (max) (I = 3 A)
C
CE (sat)
Zener diode included between collector and base.
Unclamped inductive load energy: E = 150 mJ (min)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
60 ± 10
V
V
V
Collector-emitter voltage
Emitter-base voltage
60 ± 10
7
DC
I
5
C
Collector current
Base current
A
A
Pulse
I
8
0.5
CP
JEDEC
JEITA
―
I
B
SC-67
2-10R1A
Ta = 25°C
Tc = 25°C
2.0
Collector power
dissipation
P
W
TOSHIBA
C
30
Weight: 1.7 g (typ.)
Junction temperature
T
150
°C
°C
j
Storage temperature range
T
stg
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ
≈ 150 Ω
Emitter
1
2006-11-21
2SD2131
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
= 45 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
I
I
V
V
V
―
―
―
10
10
μA
μA
mA
V
CBO
CEO
CB
CE
EB
E
Collector cut-off current
= 45 V, I = 0
―
B
Emitter cut-off current
I
= 6 V, I = 0
―
―
2.5
70
EBO
C
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V
V
I
I
= 1 mA, I = 0
50
60
60
―
(BR) CBO
(BR) CEO
C
C
E
= 10 mA, I = 0
50
70
V
B
h
h
V
V
= 3 V, I = 3 A
2000
15000
―
FE (1)
FE (2)
CE
CE
C
DC current gain
= 3 V, I = 5 A
1000
―
C
V
V
I
I
I
= 3 A, I = 6 mA
―
1.1
1.3
1.7
―
1.5
2.5
2.5
―
CE (sat) (1)
CE (sat) (2)
C
C
C
B
Collector-emitter saturation voltage
V
= 5 A, I = 20 mA
―
―
B
Base-emitter saturation voltage
Unclamped inductive load energy
V
= 3 A, I = 6 mA
B
V
BE (sat)
E
(Note 1) 150
mJ
S/B
Output
Turn-on time
t
―
―
―
1.0
4.0
2.5
―
―
―
on
20 μs
I
B1
Input
I
Switching time
B2
μs
Storage time
Fall time
t
stg
V
= 30 V
CC
t
f
I
= −I = 6 mA, duty cycle ≤ 1%
B2
B1
Note 1: Measurement circuit for unclamped inductive load energy
V
CC
L = 10 mH
P
W
I
= 0.1 A
0
B1
T.U.T
I
= −0.1 A
B2
I
I
B1
B2
Clamp (C-B Zener)
I
CP
V
CE
C
0
I
Note 2: (1) Pulse width adjusted for desired I
(I
= 5.47 A min)
CP CP
2
(2) E = 1/2 L I
CP
Marking
D2131
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-21
2SD2131
I
– V
I – V
C BE
C
3
CE
8
6
4
2
0
Common
emitter
5
8
6
4
2
0
2
Tc = 25°C
1.5
1
0.7
0.5
I
= 0.3 mA
B
Tc = 100°C
−55
Common emitter
25
V
= 3 V
CE
0
0
2
4
6
8
10
0
0.8
1.6
2.4
3.2
4.0
Collector-emitter voltage
V
(V)
Base-emitter voltage
V
(V)
CE
BE
h
– I
V
– I
CE B
FE
C
30000
10000
2.4
2.0
1.6
1.2
0.8
0.4
0
Common emitter
= 3 V
V
CE
I
= 8 A
C
5
5000
3000
Tc = 100°C
25
3
−55
1
1000
500
0.1
Common emitter
200
0.05 0.1
Tc = 25°C
0.3 0.5
1
3
5
10
20
0.1
0.3 0.5
1
3
5
10
30 50 100
300
Collector current
I
C
(A)
Base current
I
B
(mA)
V
– I
V
– I
BE (sat) C
CE (sat)
C
10
10
Common emitter
/I = 250
Common emitter
I
I
/I = 250
C B
C B
5
3
5
3
Tc = −55°C
Tc = −55°C
25
1
1
100
25
100
0.5
0.3
0.5
0.3
0.1
0.3 0.5
1
3
5
10
0.1
0.3 0.5
1
3
5
10
Collector current
I
C
(A)
Collector current
I
C
(A)
3
2006-11-21
2SD2131
R
th
– t
w
100
30
10
3
(1) No heat sink Ta = 25°C
(1)
(2)
(2) Infinite heat sink Tc = 25°C
1
0.3
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Safe Operating Area
P
– Ta
C
20
10
35
30
25
20
15
10
5
(1) Tc = Ta
Infinite heat sink
(2) No heat sink
I
max (pulsed)*
C
(1)
1 ms*
I
max (continuous)
C
5
3
10 ms*
DC operation
Tc = 25°C
1
0.5
0.3
(2)
*: Single nonrepetitive
pulse Tc = 25°C
0
0
25
50
75
100
125
150
175
Curves must be derated
linearly with increase in
temperature.
Ambient temperature Ta (°C)
V
max
CEO
0.1
1
3
5
10
30
50
100
Collector-emitter voltage
V
(V)
CE
4
2006-11-21
2SD2131
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2006-11-21
2SD2131_06 相关器件
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| 2SD2132 | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | 获取价格 |
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| 2SD2132/UV | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | 获取价格 |
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| 2SD2132/UW | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | 获取价格 |
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| 2SD2132/V | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | 获取价格 |
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| 2SD2132/VW | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | 获取价格 |
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| 2SD2132/W | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | 获取价格 |
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| 2SD2132T93 | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | 获取价格 |
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| 2SD2132T93/U | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | 获取价格 |
|
| 2SD2132T93/UV | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | 获取价格 |
|
| 2SD2132T93/UW | ROHM | Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | 获取价格 |
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