2SK1746_技术文档

2004-3

PRODUCT GUIDE

Power MOSFETs

semiconductor

http://www.semicon.toshiba.co.jp/eng

2004

Features and Structure

Power MOSFETs

All power MOSFETs have the following features:

1) No carrier storage effect

Drain

Superior frequency and switching characteristics

2) Rugged without current concentration

3) Low drive power due to voltage-controlling device

4) Easy parallel connection

Gate

Protection

zener diode

Source

ꢀꢀToshiba Power MOSFETs have the following

additional features:

1) Guaranteed avalanche withstand capability

2) Improved the function of built-in diodes

3) High ruggedness

No absorber circuit required

ꢀ

greatly expands the possibility of circuit design

ꢀ

enables to take better margin for circuit design

ꢀ

4) High-speed switching

contributes to equipment's high-speed operation

ꢀ

5) Low R(DS)ON

reduces power consumption of equipment

ꢀ

6) Downsized packages

enable equipment's size to be compact and thin

ꢀ

7) Low drive loss

reduces power consumption of equipment

ꢀ

8) Zener diode between gate and source

Improved electrostatic withstand between gate and source

ꢀꢀStructure of Toshiba Power MOSFETs

Double-Diffusion Structure

ꢀ π-MOS

Source

Gate

Toshiba Power MOSFETs use the double-diffusion MOS (D-MOS)

structure, which produces a high-withstand voltage, to form channels.

This structure is especially well suited to high-withstad voltage and

high-current devices.

A high level of integration yields a high-performance power MOSFET

with low On-resistance and low power loss.

n⁺

P

n^-

n⁺

Drain

ꢀ U-MOS

Trench Structure

Higher channel density is achieved by connecting channel vertically

as having a U-groove at the gate region and this structure reduces

On-resistance to lower than other MOSFET structures. This is an

ideal for low-voltage power MOSFETs.

Source

Gate

n⁺

P

n^-

n⁺

Drain

4

New Power MOSFET Products

All products have a protection zener diode between gate and source.

Avalanche withstand capability in single and series Power MOSFET products

SOP Series VDSS = 20 V to 60 V

VS and PS Series VDSS = 12 to 30 V

SOP Series products are compact and thin, and require only a small

mounting area. They are suitable for lithium-ion secondary battery

protection circuits and for notebook PCs.

VS Series and PS Series products are very compact and thin, and

suitable for various items of portable electronic devices.

ꢀ

ꢀLithium-ion secondary battery protection circuits

ꢀNotebook PCs

ꢀPortable electronic devices

ꢀ

ꢀPortable phones

ꢀNotebook PCs

ꢀꢀPortable electronic devises

Applica-

tions

Applica-

tions

TFP (Thin Flat Package) Series

TO-220SIS Series VDSS = 450 to 900 V

TFP (Thin Flat Package) Series is comprised of new high-

performance devices with a 4-pin structure for separating input and

output. TFP Series devices have the same ratings as existing

TO-220SM package devices; however, the volume of them occupies

only 42% of the volume of TO-220SM package devices.

This series downsized 2.8-mm package height compared to the

conventional package, TO220NIS. In addition, the chip design

optimization, π-MOS IV / VI Series housed in this new package,

reduced Qg characteristics.

ꢀ

ꢀDC-DC converters

ꢀMotor drives

ꢀSwitching power supplies

ꢀꢀAC adapters

ꢀ

ꢀDC-DC converters

ꢀPDP drivers

ꢀMotor drivers

Applica-

tions

Applica-

tions

U-MOS III Series VDSS = 40 V to 100 V

High-integration is achieved using trench structure technique. Low-

voltage driving (VGS = 4 V) is possible because of ultra-low On-

resistance.

π-MOS VII Series VDSS = 100 V

With employing submicron technology and reducing gate charge,

this latest series realized extremely fast speed and low RDS(ON)

.

ꢀꢀDigital amps

ꢀꢀDC-DC converters

ꢀꢀMotor drivers

ꢀ

ꢀDC-DC converters

ꢀMotor drives

ꢀSolenoids and lamp drives

Applica-

tions

Applica-

tions

π-MOS

V

Series VDSS = 150 V to 250 V

π-MOS V High-Speed Series VDSS = 250 V to 600 V

π-MOS V High-Speed Series is new product series and achieves

faster switching speed than π-MOS V Series which are currently

well-established in the marketplace.

The π-MOS Series is comprised of low-cost devices which are ideal

for use in monitors, especially for frequency control and S-shape

correction.

Two types of series are available:

High-Speed Switching Series

High-Speed Diode Series

ꢀ

ꢀMonitors

ꢀDC-DC converters

ꢀPDP drives

ꢀ

ꢀInverters

ꢀMotor drives

ꢀꢀAC adapters

ꢀꢀSwitching power supplies

Applica-

tions

Applica-

tions

π-MOS

V

Series VDSS = 400 V to 600 V

π-MOS III Series VDSS = 800 V to 900 V

This Series is comprised of highly integrated, high-performance,

high-breakdown-voltage and low-cost products with VDSS in the

range 800 V to 900 V which are ideal for use in 200-V AC input-

switching power supplies.

This Series is comprised of highly integrated, high-performance,

high-breakdown-voltage and low-cost products with VDSS in the

range 400 V to 600 V which are ideal for use in 100-V AC input-

switching power supplies.

ꢀ

ꢀSwitching power supplies

ꢀAC adapters

ꢀLighting inverters

Applica-

tions

Applica-

tions

ꢀꢀSwitching power supplies

5

Power MOSFET Characteristics

1.Features of SOP Series

Circuit example for DC-DC Converter

ꢀ Switching (high side)

ꢀ Power management

High-speed, trench and N-channel MOSFET

Low On-resistance, trench and P-channel MOSFET

(N-channel high-speed or ultra high-speed U-MOS III Series)

(low On-resistance U-MOS IV Series)

IN

OUT

ꢀ Synchronous rectifier (low side)

High-speed, trench and N-channel MOSFET

(N-channel high-speed or ultra high-speed U-MOS III Series)

MOSBD

Development Process of High-Speed U-MOS Series

Improved trade-off between On-resistance and gate switch charge due to short-channel structure, trench contact

structure and Al straps.

200

ꢀRDS(ON) reduction

High-speed U-MOS II

ꢀReduction of package inductance

150

100

50

Drain

High-speed U-MOS III

Ultra High-speed U-MOS III

Source

Improved characteristics

Gate

by using Al straps

Al straps

0

1999

2002

2003

Chip development

High-speed U-MOS II

High-speed U-MOS III

Ultra high-speed U-MOS III

MOSBD (MOSFET with SBD)

Package development

SOP-8

Strap structure

SOP Advance

10

Ultra High-Speed U-MOS III Series

ꢀꢀCharacteristics

NEW

ꢀꢀElectrical Characteristics Comparison

High-Speed U-MOS III Ultra High-Speed U-MOS III

TPC8009-H TPC8017-H

•

Low gate switch charge: 14% reduction compared

R

DS(ON)(mΩ)

11

7.3

7.8

to high-speed U-MOS III

Qsw(nC)

Cgd(pF)

Cgs(pF)

9.1

Performance Index:

improved 43%

•

Low On-resistance (Al straps): 34% reduction

compared to high-speed U-MOS III

250

1210

175

1290

56.9

• Housed in SOP Advance, high current, thin

RDS(ON)XQsw(mΩ•nC)

100.1

20.7%

and excellent heat dissipated package

Control shoot-

through current

Capacitance ratio (Cgd / Cgs)

13.6%

@RDS(ON): VGS = 4.5 V typ.

Qsw: VDS = 24 V typ.

Cgd/Cgs: VDS = 10 V typ.

43% RDS(ON) X Qsw reduction

(compared to high-speed U-MOS III

)

ꢀꢀDC-DC Converter Efficiency Comparison

•

Ultra High-Speed U-MOS III vs. Conventional Products

@ f = 300 kHz, V = 17.6 V, V

in

= 1.6 V

out

92%

TPC8020-H+TPC8020-H

Solid line: Ultra High-Speed U-MOS III

Dotted line: High-Speed U-MOS III

(conventional products)

90%

88%

86%

84%

Efficiency

improved

TPC8009-H+TPC8009-H

TPC8020-H+TPC8018-H

82%

80%

78%

TPC8009-H+TPC8013-H

0

2

4

6

8

10

12

14

16

Output Current Iout (A)

Comparison when ultra high-speed MOS III Used in Combination

•

@ f = 300 kHz, Vin = 17.6 V, Vout = 1.6 V

TPC8020-H+TPC8020-H

91%

90%

89%

88%

87%

86%

85%

84%

83%

82%

81%

Solid line: the best combination

1. Low current(Iout ≤10 A)

TPC8020-H + TPC8020-H

2. High current(Iout >10 A)

TPC8020-H + TPC8018-H

TPC8017-H+TPC8018-H

TPC8020-H+TPC8017-H

TPC8017-H+TPC8017-H

TPC8020-H+TPC8018-H

0

2

4

6

8

10

12

14

16

Output Current I^out(A)

Q

1

Q

SW(nC)

RDS(ON)(mΩ)

L1

V

IN

VOUT / IOUT

@VDS = 24 V

@VGS = 4.5 V

Q

2

TPC8020-H

TPC8017-H

TPC8018-H

TPC8009-H

TPC8013-H

9.5

7.3

6.9

7.8

R

L

C

1

C

IN

Ultra High-Speed

U-MOS III

SBD

[Test conditions]

f = 300 kHz

Control IC

5.0

12.0

9.1

V

IN = 17.6 V

OUT = 1.6 V

11.0

6.6

High-Speed

U-MOS III

15.6

11

Power MOSFET Characteristics

(MOSFET with SBD)

NEW

MOS BD

ꢀꢀCharacteristics

• Compact size

Integrated three devices ( two MOSFETs and one SBD) into a single package

• High-performance device

High side: high-speed MOSFET (high-speed U-MOS III

)

Low side: MOSBD (U-MOS III MOSFET with a SBD)

Conventional Circuit

MOS BD

Bu ilt -in S BD

High side (Q1)

High side

Low side (Q2)

Low side

Q1

Q2

SBD

SOP-8

+

ꢀꢀApplications

• Portable devices: DC-DC converters for notebook PCs

ꢀ Product Line-up

R

max (mΩ)

4.5V

30

Maximum ratings

DS(ON)

Q

typ.

C

typ.

g

Circuit

Configuration

iss

Part Number

Remark

(nC)

(pF)

940

V

(V)

DSS

I (A)

D

10V

High-speed

30

6

25

18

17

49

N-ch/

N-ch+SBD

U-MOS III

TPC8A01

30

8.5/1

21

2295

U-MOS III

12

NEW

S OP Ad va n c e

ꢀꢀCharacteristics

• Mounting area is identical with that of SOP-8.

• On-resistance reduction and thin package (1.0 mm max)

employing flat leads and Al straps

• Achieved high current and high power dissipation by attaching an

exposed heat sink on the bottom of the package

(I^D(DC)= 40 A, P

D

= 45 W)

0.4 ± 0.1

1.27

0.05

M

A

8

5

1

4

0.15 ± 0.05

4.25 ± 0.2

1

4

8

5

0.595

0.8 ± 0.1

A

5.0 ± 0.2

1,2,3: Source

4: Gate

S

0.05 S

5,6,7,8: Drain

SOP-8

30

SOP Advance

30

Features of SOP Advance

The same PCB area as SOP-8

Low profile, t = 0.9 mm

PCB area

(mm²)

(mm)

Total height (max)

1.9

65.8

–

1.0

rth(ch-a) (t = 10s)^{(Note 1)}

(°C / W)

(A)

44.6

2.78

40

High-power dissipation

rth(ch-c)

Current rating

18

High-current guarantee

Al straps

Package resistance^{(Note 2)}

(mΩ)

1.6

0.5

Note 1: When mounted on a glass epoxy board (25.4 mm X25.4 mm x1.6 mm) Note 2: without chip resistance

ꢀꢀApplications

• Portable devices: DC-DC converters for notebook PCs

ꢀ Product Line-up

Circuit

Configu-

ration

R

(ON) max(mΩ)

Maximum Ratings

DS

Q

C

typ.

g typ.

iss

Part Number

Remark

(nC)

(pF)

V (V)

DSS

I (A)

D

10V

4.5V

13

4.0V

Ultra high-speed

U-MOS III

TPCA8005-H ꢀ

TPCA8003-H

TPCA8004-H

9

—

30

27

35

40

24

25

37

1395

1465

2265

Ultra high-speed

U-MOS III

N-ch

Single

30

6.6

4.6

9.5

6.2

Ultra high-speed

U-MOS III

30

TPCA8102

TPCA8103

–30

–40

6

—

14

109

184

4600

7880

U-MOS III

U-MOS IV

P-ch

Single

4.2

6.8

ꢀ: Under development

13

Power MOSFET Characteristics

SOP-8 Series Line-up .... [Part Number: TPC8xxx]

ꢀꢀFeatures

• Low On-resistance and high-speed switching series are lined up.

Low On-resistance Series: U-MOS III / IV

High-speed switching series: high-speed U-MOS III, ultra high-speed U-MOS III

• On-resistance reduction employing Al straps

ꢀ Product Line-up

R

max (mΩ)

Maximum Ratings

Circuit

Configuration

DS(ON)

Q

(nC)

C

iss

typ.

(pF)

typ.

g

Remark

Part Number

TPC8004

V

DSS

30

(V) I (A)

D

10V

50

20

27

9

4.5V

—

13

22

25

—

12

9.5

7.5

6.2

—

44

—

20

—

10

—

30

—

30

21

4V

80

30

40

—

2.5V

5

—

70

30

—

14

—

50

—

16

40

16

23

39

18

90

29

25

46

38

11

9.5

22

15

25

40

75

17

32

45

77

107

130

180

115

48

24

28

40

28

16

28

17

18

17

49

475

1250

790

π-MOS VI

High-speed U-MOS II

Ultra high-speed U-MOS III

U-MOS III

30

7

TPC8001

7

TPC8006-H

TPC8020-H ꢀꢀ

TPC8014

TPC8010-H

TPC8003

30

13

11

13

15

18

1.8

5

1395

1860

1020

4380

1460

1465

2380

2265

440

30

14

16

7

—

30

—

High-speed U-MOS III

U-MOS II

N-ch

Single

30

13

—

30

8

High-speed U-MOS III

Ultra high-speed U-MOS III

High-speed U-MOS III

Ultra high-speed U-MOS III

TPC8015-H

TPC8017-H

TPC8016-H

TPC8018-H

TPC8012-H

TPC8208

TPC8207

TPC8209

TPC8211

TPC8203

TPC8210

TPC8206

TPC8104-H

TPC8105-H

TPC8109

TPC8108

TPC8111

TPC8113

TPC8107

ꢀ

30

6.6

5.7

4.6

400

—

40

36

21

15

50

65

40

20

13

12

10

7

—

30

—

30

—

200

20

—

π-MOS V

50

20

60

—

780

U-MOS III

U-MOS II

U-MOS III

U-MOS II

U-MOS III

20

6

2010

600

30

5

N-ch

Dual

30

5.5

6

1250

1700

3530

800

30

32

—

30

8

60

5

75

120

60

30

23

18

15

14

6.8

—

U-MOS II

High-speed U-MOS II

U-MOS III

–30

–20

–40

–20

–30

30

–5

–7

–10

–11

–13

–18

–10

–8

–5

–4.5

6

730

1440

2260

3510

5710

4500

5880

7480

9130

2180

2030

970

U-MOS III

U-MOS IV

U-MOS III

U-MOS IV

U-MOS III

U-MOS II

P-ch

Single

6

ꢀ

TPC8112

TPC8114

TPC8115

TPC8110

TPC8305

TPC8303

4.5

—

25

—

35

21

35

50

35

33

55

25

18

35

—

P-ch

Dual

65

32

65

80

65

46

90

—

1700

970

TPC8401

TPC8402

TPC8403

TPC8A01

–30

30

–4.5

5

π

-MOS VI

475

N-ch/

P-ch

U-MOS II

–30

30

–4.5

6

970

850

–30

30

–4.5

6

940

High-speed U-MOS III

U-MOS III

N-ch/

N-ch+SBD

30

8.5/1

—

2295

ꢀ: Al Strap type ꢀ: Under development

14

TSSOP-8 Series Features

ꢀꢀFeatures

• Achieved RDS(ON) = 17mΩ for TPCS8204 employing U-MOS III design

• Common-drain types are available:

Ideal use for lithium-ion battery protection and reverse current protection

20

Low On-resistance

Dual type / V

= 20 V

DSS

N-channel 20-V device (TSSOP-8 / dual type)

15

ꢀꢀCharacteristics

10

• Employed the third generation design of ultra-high cell

density trench technology (18 Mcell/cm²)

5

•

Reduced On-resistance by 25% than that of conventional products

(in comparison with Toshiba U-MOS II device)

0

U-MOS II

U-MOS III

U-MOS IV

Common-drain Type

Common-drain series suitable for reverse current prevention in mobile devices and

lithium ion secondary battery protection

Reverse current prevention

D2 S2 S2 G2

Common-drain

type

Conventional type

DC-DC

converters

Total impedance

reduced by elimination

of external wiring

Battery protection

Charger

Control IC

Wiring resistance included

since D1 and D2 are

D1 S1 S1 G1

externally wired together

ꢀ Product Line-up

R

max (mΩ)

Maximum Ratings

(ON)

DS

Q

(nC)

typ.

C

typ.

(pF)

Circuit

Configuration

g

iss

Part Number

Remark

V (V)

DSS

I (A)

D

10V

4V

2.5V

2.0V

200

250

–20

–30

20

1.3

1.9

1.1

1.8

–6

–11

5

800

—

38

—

60

40

22

29

60

30

—

90

60

35

45

95

80

12

10

380

630

π-MOS

V

TPCS8004

TPCS8007

TPCS8006

TPCS8008

TPCS8102

TPCS8101

TPCS8104

TPCS8105

TPCS8205

TPCS8209

TPCS8210

TPCS8204

TPCS8208

TPCS8211

TPCS8212

TPCS8302

TPCS8303

500

N-ch Single

1000

—

ꢀ

11

380

550

—

20

37

2740

1810

5710

760

U-MOS II

U-MOS IV

U-MOS II

U-MOS III

U-MOS IV

25

P-ch Single

12

40

37

18

107

11

13.5

—

19.5

45

20

5

—

30

15

1280

2160

1590

2560

20

5

—

30

15

ꢀ

20

6

N-ch Dual

P-ch Dual

—

17

22

20

6

17

22

20

6

24

20

6

24

20

–20

–6

35#

21#

28.5

33

–20

–5

ꢀ: Common-drain ꢀ: Under development

15

Power MOSFET Characteristics

2. VS Series

ꢀꢀPackage

The VS Series that achieves the one of the industries' thinnest class package (height: 0.85 mm max).

•

VS -6 Series: Standard size (2.9 mm x 1.6 mm) that is suitable for general-purpose use.

VS -8 Series: The flat package offers more powers as compared with the VS-6 package, and the On-resistance is reduced

by 20% while the mounting area is reduced by 32%. In addition, the power dissipation is improved by 14%.

P S -8 Series: Achieving the same mounting area as the VS-6 Series, PS-8 is improved chip mounting capability,

widen mold width using flat leads. This Series is also reduced the On-resistance by 70%.

•

VS -6

2.9

8.1 mm²

0.95

3 2

%

1 0

%

downsizing

higher power

VS -8

P S -8

2.9

8.1 mm²

5.5 mm²

0.65

(Unit: mm, typical values unless otherwise specified.)

ꢀꢀMain Applications

ꢀDC-DC converters: notebook PCs, LCDs, PPDAs

ꢀSwitches: Cell phones, notebook PCs, USB switches, power management switches

ꢀMotor drives: HDDs

16

VS-6 Series Line-up .... [Part Number: TPC6xxx]

ꢀꢀFeatures

• Achieved ultra low-On resistance employing U-MOS II design

• Zener diode between gate and source for all products

• Thin package whose height is as low as 0.85 mm (max) on a board.

ꢀ Product Line-up

Maximum Ratings

R

max (mΩ)

DS(ON)

Q

typ. C typ.

iss

g

Circuit

Configuration

Part Number

Marking

Remark

(nC)

(pF)

V

(V)

DSS

20

I (A)

D

6

10V

—

30

24

—

95

—

60

4.5V

30

24

50

32

28

145

35

110

60

40

2.5V

2.0V

60

37

—

1.8V

—

90

300

—

45

32

—

15

17

13

25

19

4.7

20

6

755

1400

610

1250

1420

170

S2A

S2C

S2B

S2D

S2E

S4A

S3C

S3E

S3A

S3D

S3B

U-MOS II

U-MOS III

U-MOS II

U-MOS III

U-MOS II

U-MOS III

U-MOS II

U-MOS III

U-MOS II

TPC6001

TPC6004

TPC6002

TPC6003

TPC6005

TPC6201

TPC6103

TPC6105

TPC6101

TPC6104

TPC6102

20

6

N-ch

Single

30

6

30

6

—

30

6

35

—

41

—

30

2.5

–5.5

–2.7

–4.5

–5.5

–4.5

N-ch Dual

–12

–20

–30

55

160

100

60

—

180

—

1520

470

P-ch

Single

12

19

11

830

1430

500

120

—

100

VS-8 Series Line-up .... [Part Number: TPCF8xxx]

ꢀꢀFeatures

• Achieved ultra low-On resistance employing U-MOS III design

• Zener diode between gate and source for all products

• Thin package whose height is as low as 0.85 mm (max) on a board.

• 32% mounting area reduction compared to VS-6 (TSOP-6) employing

flat package with high cell density

• P

D

= 2.5 W @ t = 5s when a device mounted on a glass epoxy board

ꢀ Product Line-up

Maximum Ratings

R

max (mΩ)

DS(ON)

Q

typ. C typ.

iss

Circuit

Configuration

g

Part Number

Marking

Remark

(nC)

(pF)

V

DSS

30

(V) I (A)

D

10V

23

—

28

—

4.5V

31

28

110

30

38

49

110

59

58

105

77

2.5V

2.0V

1.8V

—

85

300

90

—

300

—

250

—

7

N-ch Single

P-ch Single

N-ch Dual

P-ch Dual

—

40

160

41

—

25.4

18

6

1270

1600

470

1550

1760

590

470

800

860

600

470

600

590

470

F2A

F3A

F3C

F3B

F3D

F4A

F5A

F5B

F5C

F5D

U-MOS III

U-MOS IV

U-MOS III

U-MOS IV

U-MOS III

U-MOS IV

U-MOS III

TPCF8001

TPCF8101

TPCF8103

TPCF8102

TPCF8104

TPCF8201

TPCF8301

TPCF8302

TPCF8303

TPCF8304

–12

–20

–30

20

–6

–5.5

–6

3

19

34

7.5

6

11

16

10

14

7.5

6

—

66

160

95

87

—

100

—

200

—

–20

–30

30

–2.7

–3

–3.2

4

72

48

72

—

TPCF8402

N-ch + P-ch

F6B

–30

20

–3.2

3.0

–2.7

105

49

—

N-ch+SBD

P-ch+SBD

66

160

100

—

F7A

F8A

TPCF8A01

TPCF8B01

–20

—

110

300

PS-8 Series Line-up .... [Part Number: TPCP8xxx]

ꢀꢀFeatures

• The same mounting area as the VS-6 (TSOP-6) Series

• Using flat leads and the latest process, U-MOS, VS-6 Series is able to offer a

70% RDS(ON) reduction compared to VS-6 Series.

• Zener diode between gate and source

ꢀ Product Line-up

R

max (mΩ)

Maximum Ratings

DS(ON)

Q

(nC)

typ.

C

typ.

(pF)

Circuit

Configuration

g

iss

Part Number

Remark

V

(V)

I (A)

D

10V

4.5V

2.5V

1.8V

DSS

30

4.2

0.1

50

—

50

72

35

—

77

3(4V)

38

—

4

—

10

—

20

10

14

34

—

470

9.3

N-ch Dual

U-MOS III

π-MOS VI

U-MOS III

U-MOS IV

NPN

TPCP8201

TPCP8401

20

N-ch / P-ch

Load Switch

–12

30

–5.5

4.2

58

—

103

—

1520

470

600

1762

—

77

TPCP8402

TPCP8J01

N-ch + P-ch

N-ch + NPN

–30

–32

50

–3.4

–6.0

0.1

105

49(4V)

—

17

Power MOSFET Characteristics

3. TFP (Thin Flat Package) Series

ꢀꢀFeatures

TFP

Stands for Thin Flat Package

ꢀꢀThin flat package has a mounting volume 58% less than that of the TO-220SM.

ꢀꢀSeparate package inputs and outputs enable stable equipment operation.

ꢀꢀImproved heat dissipation characteristic enables mounting of higher-power devices.

Package range for surface-mount devices

100

90

80

70

60

50

40

30

20

10

NEW

TFP vs TO-220SM

TFP

-

TO 220

-

TO 3P

(SM)

(

ꢀꢀ

)

15.5 15.0

10

1.0

0.1

DP

(

ꢀꢀ )

10.0 10.0

TFP

-

SOP 8

(

ꢀ

)

6.8 5.5

PW MOLD

SP

(

ꢀ

)

(

ꢀꢀ )

6.8 5.5

6.5 3.5

PW MINI

TO-220

SM

(

ꢀꢀ )

4.6 2.5

(

)

: Body Size

Unit : mm

1

10

100

1000

0.1

1.0

10

100

1000

Drain-source voltage V_DSS(V)

Power Dissipation P_D(W)

ꢀꢀApplications

ꢀꢀDC-DC converters

ꢀꢀMotherboards

ꢀꢀAutomotive equipment

ꢀꢀTFP line-up

R

max (mΩ)

Maximum Ratings

DS(ON)

Q

typ.

C

iss

typ.

g

Part Number

Remarks

V

(V)

DSS

I (A)

D

(nC)

(pF)

V

=10V

GS

V

=4V

GS

-100

30

-16

-18

70

75

50

75

45

18

30

25

20

10

13

5

210

320

48

140

110

62

1100

2900

5000

3530

5450

3700

9300

L²-π-MOS

V

2SJ619

90

6.0

120

2SJ620

-

U-MOS II

U-MOS III

U-MOS II

2SK3397

2SK3389

2SK3439

2SK3440

2SK3441

30

5.0

-

30

5.0

10.0

116

55

60

8.0

-

60

5.8

10.0

210

(196)

85

60

(5.8)

20

-

(12400)

4100

1380

2030

2080

4000

2090

1340

1600

780

ꢀ

2SK3842

2SK3442

2SK3387

2SK3443

2SK3444

2SK3388

2SK3445

2SK3499

2SK3544

2SK3466

2SK3538

2SK3398

2SK3438

100

150

200

250

400

450

500

600

-

120

55

180

57

L²-π-MOS

V

-

45

π-MOS

V

82

44

V

105

550

400

1500

850

520

1000

100

45

34

17

8

30

1300

2040

1200

12

10

45

28

ꢀ: Under development

18

3-1. Heat Dissipation Characteristic

Thermal resistance

TFP with mounting area 33% less than that of the TO-220SM offers Rth (ch-c) and Rth (ch-a)

almost equivalent to those of the TO-220SM (when mounted on an HIT board).

Actual rating / heat resistance between channel and case

(with infinite heat dissipation heat sink mounted)

Actual rating / heat resistance between channel and ambient

(with 3 cm × 3 cm HIT mounted)

100

TFP

TO-220SM

10

TFP

TO-220SM

1

0.1

Single pulse

100 1000

Single pulse

0.01

0.001

0.01

0.001

0.01

0.1

1

10

100

1000

0.01

0.1

1

10

Pulse Width t

w

(S)

Pulse Width tw (S)

10

9

TFP: 2SK3389

TO-220SM:

equivalent to 2SK3389

2.8

Unit: mm

4.5

Application of DC current (with infinite heat dissipation heat sink mounted)

The source fin of the TFP generates less heat than the source lead of the TO-220SM due to the TFP'S efficient heat dissipation.

TFP: 2SK3389 30 V, 75 A, 5 mΩ Max

TO-220SM: equivalent to 2SK3389

160

140

Channel temperature

120

Drain fin temperature

100

Source lead

temperature

Source fin temperature

80

60

40

20

0

60

40

20

0

50

Drain Current I

100

(A)

150

0

50

Drain Current I

100

(A)

150

D

Measured point

Drain fin

Measured point

Drain fin

Source fin

Source lead

19

Power MOSFET Characteristics

3-2. For Stable Circuit Operation and High-current, High-speed Switching

Stable circuit operation

The advantage of MOSFETs is that, because of

their high input impedance, they allow high

output control with low power drive. However,

G

Load

Input control signal

S1

their disadvantage is that they are susceptible

D

to malfunction due to noise. TFP Series devices

S2

High load current

have four pins, allowing the input drive to be

kept separate from the outputs, thus reducing

the risk that the outputs will affect the input.

L-component influence on high-current, high-speed switching

Lead impedance, which causes problems with high-current, high-speed switching in DC/DC converters, is reduced.

R Load

High-current, high-speed switching

D

increases the influence of the

L-component between the source

and GND.

V

DD

Use of the S1 pin for gate input

signal return stabilizes circuit

operation by eliminating the

influence of the L-component.

G

VL = L (di/dt)

S2

S1

TFP

TO-220SM

High impedance

20

Switching waveform

When the S1 pin is used

for input signal return

(4 pins):

When the S1 pin is not

used for input signal return

(3 pins):

Shorter rise time

The four-pin structure

results in a shorter rise

time and more stable

switching, all of which help

to reduce the risk of

Stable circuit operation

t

r

= 5.4 ns, ton = 25.1 ns

_DSturend on at 40%

tr = 4.6 ns, ton = 22.1 ns

V

abnormal oscillation.

3-pin, 4-pin

4-pin

V_GS= 2V/div, V_DS= 5V/div, t_W= 20ns/div

V_GS= 2V/div, V_DS= 5V/div, t_W= 100ns/div

3-pin

V_GS= 2V/div, V_DS= 5V/div, t_W= 100ns/div

Insert a coil of L = 17 nH between gate and source

21

Power MOSFET Characteristics

4. TO-220SIS π-MOS IV / VI Series

ꢀꢀFeatures

• The shorter the standoff height is achieved, the lower the product height on a PCB will be; hence, the mounting height is

reduced by approximately 2.8 mm as compared to the existing package, TO-220NIS. This contributes to equipment's size

reduction thinner size.

• The chip design optimization reduced Qg characteristics. Also, the switching characteristics realized 10-% faster than that of

exsisting products.

• Improved heat dissipation by employing a Cu connector.

ꢀꢀPackage Dimensions

Existing package: TO-220NIS

TO-220SIS

New package

10

ø3.2

4.5

2.7

10

ø3.2

L

1–

L = 2.8

2

2.7

L

1

L

2

Board

Unit: mm

ꢀꢀLine-up

Maximum Ratings

R_DS(ON)max (Ω)

Q_gtyp.

(nC)

C_iSStyp.

(pF)

Conventional Products

Series

New Products

V_DSS(V)

450

I_D(A)

2

V_GS= 10V

2.45

1.5

V_GS= 4V

9

16

28

42

9

330

550

2SK3543

2SK2662

2SK2543

2SK2842

2SK3067

2SK2750

2SK2545

2SK2996

2SK2843

2SK3757

2SK3563

2SK3561

2SK3568

2SK3767

2SK3567

2SK3562

2SK3667

2SK3569

2SK3797

2SK3566

2SK3564

2SK3798

2SK3565

2SK3742

2SK3799

ꢀ

5

500

600

8

0.85

0.52

4.5

1050

1500

320

12

2

π-MOS VI

3.5

6

2.2

17

28

33

42

(62)

12

17

550

1.25

1.0

1050

1300

1500

(3150)

470

7.5

10

(13)

2.5

3

0.75

(0.45)

6.4

ꢀ

2SK2718

2SK2700

4.3

700

4

3.5

π-MOS IV

900

5

2.5

28

25

1150

2SK2717

5

2.5

(8)

(1.4)

ꢀ: Under development

22

ꢀꢀImproved Heat Dissipation

<TO-220SIS>

Power dissipation

efficiency

improvement

Generated heat

from the chip surface is

dissipated to the pins on the

both ends via the

connectors.

ꢀꢀComparison of Electrical Characteristics with Conventional and New Products

Conventional Product

2SK2717

New Products

2SK3565

V

DSS(V)

900

5

900

5

I

D

(A)

R

DS(ON)(Ω)

2.5(max)

45(typ.)

200(typ.)

2.5(max)

28(typ.)

170(typ.)

Qg(nC)

toff(ns)

Conventional product: 2SK2717

New product: 2SK3565

Qg

50

Qg

50

Switching-Off Waveform Comparison

45

40

35

ID = 2 A/div

28 (typ.)

30

25

20

25

20

2SK3565

15-% improvement on

toff characteristics as

compared to the

V

GS = 2 V/div

2SK2717

toff

conventional product

250

230

210

190

170

150

250

230

210

190

170

150

V

DS = 50 V/ns

t = 50 ns/div

typ.

23

Power MOSFET Characteristics

2

5. L -π-MOS V Series

ꢀꢀHigh-integration (4.4 M cells/inch²), ultra-low On-resistance series based on original technologies

2

• On-resistance per unit area reduced by 15% (compared to L -π-MOS IV, RDS(ON) max)

• Operation at logic level voltage [V^GS= 4-V drive] (Vth = 0.8 V to 2.0 V)

• Avalanche withstand capability guaranteed, superior withstand capability of parasitic diode

• Protection zener diode between gate and source

ꢀꢀN-ch product line-up

R

DS(ON) (Ω)

R

DS(ON) (Ω)

Qg

typ.

(nC)

V

DSS

(V)

I

D

(A)

PD

Part Number

Package Type

V

GS

I

D

(A)

V

GS

ID

(W)

typ.

max

typ.

max

(V)

10

(V)

4

(A)

1

2SK2964

2SK2844

2SK3089

2SK3090

2SK3127

2SK3128

2SK3125

2SK2989

2SK2614

2SK2507

2SK2886

2SK3051

2SK2744

2SK2550

2SK2551

2SK2745

2SK2615

2SK2961

2SK2229

2SK2231

2SK2782

2SK2232

2SK2311

2SK2385

2SK2233

2SK2266

2SK2312

2SK2376

2SK2398

2SK2173

2SK2445

2SK2267

2SK2313

2SK2962

2SK2963

2SK2200

2SK2201

2SK2399

2SK2400

2SK2391

2SK2314

2SK2789

30

2

35

40

45

60

70

5

1.5

60

PW-Mini

0.13

0.016

0.025

0.016

0.0095

0.0053

0.12

0.18

0.02

1

0.18

0.026

—

0.25

0.035

—

5.8

40

TO-220AB

TO-220FL/SM

TO-3P (N)

TO-3P (SM)

LSTM

18

20

25

30

2.5

10

12

25

1

4

18

—

1.3

5

10

30

50

0.03

—

4

23

10

30

60

0.02

—

39

30

65

0.012

0.007

0.15

—

66

30

150

0.9

40

—

66

30

—

130

6.5

25

50

0.24

0.055

0.058

0.027

—

0.33

0.08

0.036

—

50

20

25

45

50

2

DP

0.032

0.034

0.014

0.024

0.015

0.024

0.0072

0.007

0.23

0.046

0.02

4

50

30

TO-220NIS

TO-220FL/SM

TO-3P (N)

PW-Mini

4

6

25

10

50

40

4

25

—

25

1

66

50

40

0.03

—

4

36

50

125

100

150

0.5

0.9

1.2

20

0.02

—

68

50

0.030

0.011

0.0095

0.3

—

36

50

—

130

6

50

0.011

0.33

0.26

0.2

0.016

0.44

0.38

0.3

60

4

60

2

LSTM

0.2

0.27

1

4

1

5.8

12

60

5

TPS

0.12

0.16

2.5

10

12

18

25

30

0.5

2

4

1.3

5

60

5

PW-Mold

DP

0.12

0.16

0.2

0.3

4

12

10

60

20

25

36

45

50

60

1

40

0.039

0.036

0.022

0.013

0.022

0.013

0.014

0.008

0.5

0.055

0.046

0.03

0.06

0.057

0.04

0.019

—

0.090

0.08

0.055

0.025

—

4

25

60

35

TO-220NIS

TO-220FL/SM

TO-220 NIS

TO-3P (N)

TO-220FL/SM

TO-220NIS

TO-220FL/SM

TO-3P (N)

TO-3P (L)

TO-3P (N)

LSTM

4

12

15

25

—

25

—

30

0.5

2

38

60

40

4

38

60

40

4

60

100

65

0.03

4

60

0.03

4

60

45

0.017

0.03

4

110

60

100

125

150

0.9

0.5

1.3

20

4

60

—

4

60

0.017

0.018

0.011

0.7

0.019

—

0.025

—

110

170

6.3

13.5

22

60

—

4

60

0.012

0.65

0.36

0.22

0.09

0.015

0.95

0.45

0.3

60

10

4

100

4

1

PW-Mini

0.5

0.7

4

3

TPS

0.28

0.35

4

3

PW-Mold

TPS

0.28

0.35

2

4

2

5

20

0.17

0.23

2.5

10

15

4

2.5

10

15

5

1.2

35

0.17

0.23

0.3

4

22

20

27

TO-220NIS

TO-220AB

TO-220FL/SM

0.068

0.066

0.085

0.13

4

50

75

4

50

60

4

50

24

ꢀꢀP-ch product line-up

R

DS(ON) (Ω)

R

DS(ON) (Ω)

Qg

typ.

(nC)

V

(V)

DSS

I

D

PD

(W)

Part Number

Package Type

V

GS

I

D

V

GS

ID

(A)

typ.

max

typ.

max

(V)

– 10

(A)

– 1

(V)

– 4

(A)

– 1

2SJ511

2SJ525

2SJ537

2SJ360

2SJ507

2SJ377

2SJ438

2SJ378

2SJ349

2SJ401

2SJ334

2SJ402

2SJ508

2SJ509

2SJ380

2SJ412

2SJ464

– 30

– 2

– 5

1.5

1.3

0.9

0.5

0.9

20

PW-Mini

0.32

0.1

0.45

0.12

0.19

0.73

0.7

0.55

0.17

0.27

0.86

0.72

0.24

0.05

0.046

1.68

0.25

0.085

0.76

0.2

5.5

27

TPS

– 2.5

– 0.5

– 2.5

– 10

– 15

– 0.5

– 6

– 2.5

– 1.3

– 0.5

– 2.5

– 10

– 15

– 0.5

– 6

– 50

– 5

0.16

0.55

0.5

0.34

1.2

18

LSTM

– 60

– 1

PW-Mini

6.5

5.6

22

– 60

– 1

1.0

LSTM

– 60

– 5

PW-Mold

TO-220NIS

TPS

0.16

0.033

0.029

1.34

0.15

0.064

0.19

0.045

0.038

1.9

0.28

0.09

0.06

2.5

– 60

– 5

25

22

– 60

– 5

1.2

45

22

– 60

– 20

– 30

– 1

TO-220NIS

TO-220FL/SM

TO-220NIS

TO-220FL/SM

PW-Mini

90

– 60

100

45

90

– 60

110

6.3

48

– 60

100

1.5

0.9

35

– 100

– 1

1.9

2.5

LSTM

– 12

– 16

– 18

0.21

0.09

0.32

0.12

TO-220NIS

TO-220FL/SM

TO-220NIS

60

– 6

48

45

– 9

140

6. 2.5-V Drive π-MOS

V Series

ꢀꢀFeatures

• 2.5-V drive: Gate drive voltage reduced from 4 V to 2.5 V

• Vth = 0.5 V to 1.1 V: Designed to operate at high temperatures with threshold voltage width reduced from 1.2 V to 0.6 V

• Avalanche withstand capability: Built-in protection zener diode between gate and source; cell structure used to improve

avalanche withstand capability

ꢀꢀLine-up

Qg

typ.

(nC)

R

DS(ON)

max

(Ω)

R

DS(ON)

max

(Ω)

Maximum Ratings

Part Number

V

GS

(V)

I

D

(A)

V

GS

(V)

ID

(A)

Package Type

V

DSS(V)

I

D(A)

PD(W)

–16

–2

0.5

0.71

–4

–1.0

1.0

–2.5

–0.5

5

2SJ465

PW-Mini

PW-Mold

2SJ439

0.28

0.38

0.12

–16

–5

20

0.20

0.29

–4

–2.5

24

5

16

2

0.5

4

1.0

2.5

0.5

2SK2549

2SK2493

PW-Mini

PW-Mold

16

5

20

0.10

4

2.5

23

25

Power MOSFET Characteristics

7. U-MOS III (Trench Type) Series

High-integration is achieved using trench structure technique. Low-voltage driving (VGS = 4V) is

possible because of ultra-low On-resistance.

Planar structure

Source

Trench (U-MOS) structure

Gate

Source

Gate

Poly Si

N

P

Poly Si

N⁺

P

N

P

N

N⁺

Drain

ꢀꢀFeatures

• High density by the submicron technology (phase

2

I

= 10 M cell / inch , phase II = 30 M cell / inch )

2

• Reduces 60% R^DS(ON)by per unit area (as compared to the maximum RDS(ON) of the conventional L -π-MOS

• Possible to operate by logic level voltage (V^GS= 4 V)

V)

• Avalanche withstanding capability guarantee and progress in di/dt capability.

• Protection zener diode between gate and source

ꢀꢀLine-up

R

max

(mΩ)

DS(ON)

R

max

DS(ON)

Qg

typ.

(nC)

Maximum Ratings

Part

Number

Applications

Remarks

Package Type

V

GS(V)

I

D

(A)

V

GS(V)

I

D

(A)

V

DSS(V)

I

D(A)

PD(W)

(mΩ)

70

36

250

19

–

100

60

30

35

–5

35

75

45

70

40

65

30

20

35

46

10

15

4

15

68

2SK2466

2SK3084

2SK3236

2SJ668

TO-220NIS

TO-220FL/SM

TO-220NIS

PW-Mold

U-MOS

I

46

15

18

15

18

20

4

52

U-MOS II

Motor drive solenoids

Lamp drivers

–60

60

170

12.5

5.8

–10

10

–2.5

18

–4

4

–2.5

18

–

15

DC-DC converters

91

2SK3662

2SK3842

2SK3844

2SK3845

TO-220NIS

TFP

U-MOS III

60

125

45

38

–

196

60

23

–

TO-220NIS

TO-3P(N)

60

125

23

–

ꢀꢀFeatures of U-MOS II

[1] Reduces 60% RDS(ON) by per unit area

• R^DS(ON)= 5.8 m (max) MOSFET housed in TO-220 package

• Operate with logic level voltage (V^GS= 4 V)

V

GS = 10 V

V

GS = 4 V

I

D

- VDS

ID - VDS

50

2SK2985

Conventional

devices

2SK2985

40

30

20

10

40

30

20

10

Conventional

devices

Common

source

= 25ºC

Common

source

T

C

T

C

= 25ºC

0

0.2

0.4

0.6

0.8

1.0

0.2

0.4

0.6

0.8 1.0

Drain-source Voltage V_DS(V)

26

8. π-MOSVII Series

With employing submicron technology and reducing gate charge, this latest series realized

extremely fast speed and low R^DS(ON)

.

ꢀꢀFeatures

ꢀꢀDynamic Input / Output Characteristics

• Low R^DS(ON)

• Total gate charge (Qg) reduction

• Fast speed switching

• High avalanche withstanding capability

20

2SK3669

2SK2399

16

(π-MOS VII

)

(π-MOS

V)

ꢀꢀApplications

• Digital amps

12

8

65% reduction

• DC-DC converters

• Motor drives

Common source

Tc = 25 ºC

4

I

D

= 10 A

V

DD = 80 V

ꢀꢀLine-up

Pulse test

0

R

max

(mΩ)

DS(ON) Ciss

Crss

typ.

(pF)

Qg

typ.

(nC)

Qsw

Maximum Ratings

0

5

10

15

20

25

30

typ.

(pF)

typ. Package Type

(nC)

Part Number

Total gate charge Qg(nC)

V

DSS(V)

100

I

D(A)

10

125

480

9

8.0

4.2

2SK3669

PW-Mold

ꢀꢀComparison of Switching Characteristics with π-MOS

V

DS = 10 V/div

V

DS = 10 V/div

On

0

V

GS = 2 V/div

10 ns/div

2SK2399 (π-MOS

V)

2SK3669 (π-MOS VII)

GS = 2 V/div

V

DS = 10 V/div

Off

0

VDS = 10 V/div

VGS = 2 V/div

50 ns/div

2SK2399 (π-MOS

V)

2SK3669 (π-MOS VII)

27

Power MOSFET Characteristics

9. π-MOS

V Series (V_DSS= 150 V to 250 V)

200-V Series for Cs / Cy switching in monitors

ꢀꢀFeatures

•

Reduced On-resistance per unit area

Chip size smaller than conventional chips and device cost reduced

Superior breakdown voltage characteristics due to optimized cell structure

Guaranteed absolute maximum voltage rating between gate and source: V_GSS= ±20 V

Products with V_DSSof 200 suitable for resonance capacitance (Cs/Cy)

ꢀꢀLine-up

Maximum Ratings

R

DS(ON)

Qg

typ.

(nC)

Applications

Part Number

Package Type

(Ω)

V

(V)

DSS

I

D

(A)

PD

I

D

(A)

V

GS

(W)

(V)

–10

10

typ.

max

–

2SJ618

–180

–10

–5

–2.5

–2

–5

–6.5

5

130

30

TO-3P(N)

TO-220NIS

PW-Mold

0.37

1.0

–5

18

20

10

24

22

29

12

57

–

2SK407

0.8

1.6

1.85

1.0

0.6

0.36

0.08

–

–2.5

–1.5

–1.0

–2.5

–3

–200

2SJ567

20

2.0

2SJ610

20

PW-Mold

2.55

1.25

0.8

2SJ512

–250

30

TO-220NIS

PW-Mold

2SJ516

35

2SK3205

2SK2882

2SK3497

2SK2992

2SK2835

2SK2381

2SK2920

2SK2350

2SK2965

2SK2382

2SK2401

2SK3176

2SK3462

2SK3342

2SK2417

2SK2914

2SK2508

2SK2598

2SK2993

2SK2967

2SK2995

20

0.5

2.5

9

150

180

18

10

1

45

TO-220NIS

TO-3P(N)

PW-Mini

0.12

0.15

3.5

10

130

1.5

1.3

25

10

5

2.2

10

0.5

2.5

5

3

5

TPS

0.56

0.26

0.15

0.13

0.8

10

17

30

40

125

12

10

20

40

100

132

5

TO-220NIS

PW-Mold

0.8

10

DC-DC converters

Monitors

Motor controllers

5

20

0.8

10

200

8.5

11

15

30

3

30

TO-220NIS

TO-220FL/SM

TO-3P(N)

PW-Mold

0.4

10

35

0.26

0.18

0.052

1.7

10

5.5

10

45

10

75

10

150

20

0.038

1.2

10

15

10

1.5

2.5

3.5

6.5

10

4.5

7.5

13

20

30

20

PW-Mold

0.8

1.0

10

30

TO-220NIS

TO-220AB

TO-220NIS

TO-220FL/SM

TO-3P(N)

TO-3P(N)IS

0.42

0.18

0.082

0.048

0.5

10

20

0.5

10

250

45

0.25

0.105

0.068

10

60

10

100

150

90

10

15

10

15

28

10. π-MOS

V Series (V_DSS= 400 V to 700 V)

High-performance series for 100-V AC input-switching power supplies

ꢀꢀFeatures

•

Low-drive-power, high-speed (Q reduced by 40%, t_fby 30%)

g

Guaranteed V_GSS= ±30 V for every device in product line

Avalanche withstand capability guaranteed, superior withstand capability of parasitic diode

Protection zener diode between gate and source

ꢀꢀLine-up

Qg

typ.

(nC)

R_DS(ON)

Maximum Ratings

(Ω)

Applications

Part Number

V_DSS

(V)

I_D

(A)

P_D

(W)

Package Type

V_GS

I_D

(V)

10

(A)

typ.

4.2

max

5.5

2SK3498

2SK2679

2SK2838

2SK2952

2SK2841

2SK2949

2SK3472

2SK3126

2SK2998

2SK3302

2SK3471

2SK2599

2SK2862

2SK2661

2SK2662

2SK2991

2SK2542

2SK2543

2SK2776

2SK2601

2SK2842

2SK3068

2SK2916

2SK2698

2SK2917

2SK2837

2SK3117

2SK3132

2SK3371

2SK2846

2SK2865

2SK3067

2SK2750

2SK3085

2SK2544

2SK2545

2SK2777

2SK2602

2SK2996

2SK2843

2SK2866

2SK2889

2SK2699

2SK2953

2SK2915

2SK3265

2SK3453

400

450

500

600

700

1

5.5

8.5

10

1

20

PW-Mold

0.5

3

5.7

17

34

5

35

TO-220NIS

TO-220FL/SM

TO-220NIS

TO-220AB

TO-220FL/SM

PW-Mold

0.84

0.4

1.2

40

1.2

3

40

0.55

4.6

5

80

0.4

5

80

0.4

5

20

4.0

0.5

5

35

3.8

9

10

0.5

2

40

TO-220NIS

LSTM

0.48

10

0.65

18

0.9

1.3

0.5

1.3

25

0.25

1

TPS

10

18

PW-Mini

10

18

TPS

2.9

3.2

9

3

TO-220NIS

TO-220AB

TO-220NIS

TO-220FL/SM

TO-220AB

TO-220NIS

TO-220FL/SM

TO-3P(N)

TO-220NIS

TO-220FL/SM

TO-3P(N)IS

TO-3P(N)

TO-3P(N)IS

TO-3P(N)

TO-3P(SM)

TO-3P(L)

2.9

3.2

1

17

30

45

58

80

280

9

5

75

1.35

0.75

0.56

0.4

1.5

2.5

4

5

35

1.5

5

50

1.5

8

80

0.85

1.0

8

40

4

8

65

4

10

12

14

15

18

20

50

1

125

40

5

0.52

0.4

6

100

80

0.4

6

AC 115 V

switching power

supplies

Ballst inverters

Motor controllers

0.35

0.21

0.07

6.4

7

150

90

0.4

7

0.27

0.095

9.0

10

25

0.5

1

150

250

20

PW-Mold

9

2

1.3

20

TPS

4.2

5.0

9

2

PW-Mold

4.2

5.0

1

9

2

25

TO-220NIS

TO-220AB

TO-220NIS

TO-220FL/SM

TO-3P(N)

TO-220NIS

TO-220AB

TO-220FL/SM

TO-3P(N)

TO-3P(N)IS

TO-3P(N)

TO-220NIS

TO-3P(N)IS

4.2

5.0

1

20

30

38

45

58

80

53

3.5

6

35

1.7

2.2

1.8

3

75

1.7

2.2

80

0.9

1.25

1.0

6

40

0.9

3

6

65

0.9

3

6

125

45

0.9

3

10

12

15

16

10

0.74

0.54

0.5

5

45

0.75

0.65

0.4

5

125

100

150

90

5

6

0.31

0.72

8

150

45

0.4

8

1.0

5

80

1.0

5

29

Power MOSFET Characteristics

11. High-Speed π-MOS

V Series (V_DSS= 450 V to 600 V)

To allow the development of high-efficiency portable equipment, Toshiba has developed two

Series of high-speed Power MOSFET devices. The two series are as follows:

The High-Speed Switching Series for AC adapters and switching power supplies

The High-Speed Switching Series for motor controllers and inverter circuits

• High-Speed Switching Series: Achieves faster switching speed than the existing π-MOS V Series which are

currently well-established in the marketplace (t_off-switching is 38% faster).

• High-Speed Diode Series: Achieves faster parasitic diode speed by using lifetime control (t_rr100 ns).

ꢀꢀLine-up

• MACH Series

R_DS(ON)

max

(Ω)

Qg

typ.

(nC)

Equivalent

Conventional

Device

Maximum Ratings

Applications

Part Number

V

GS

ID

Package Type

V

DSS(V)

I

D(A)

P

D

(W)

40

65

(V)

10

(A)

450

600

10

13

6

0.65

0.4

5

23

34

25

28

35

2SK3126

—

TO-220NIS

2SK3310

2SK3309

2SK3403

2SK3312

2SK3437

2SK3399

5

TO-220FL/SM

AC adapters

Switching power

supplies

—

100

65

6

—

1.25

1

3

10

80

5

2SK2996

2SK2866

100

0.75

5

• High-speed diode series (HSD Series) line-up

R_DS(ON)

max

(Ω)

t

Equivalent

Conventional

Device

rr

Maximum Ratings

typ.

(ns)

Applications

Part Number

V

GS

ID

Package Type

V

DSS(V)

I

D(A)

P

D

(W)

(V)

10

(A)

2.5

6

2SK3417

2SK3316

2SK3313

2SK3314

2SK3131

2SK3130

500

600

5

50

TO-220FL/SM

TO-220NIS

TO-3P(N)

1.8

60

2SK2662

2SK2842

2SK2698

2SK3132

2SK2545

1.8

35

40

Motor controllers

Inverters

Switching power

supplies

12

15

50

6

0.62

0.49

0.11

1.55

90

150

250

40

7

105

85

TO-3P(L)

25

3

TO-220NIS

ꢀꢀFeatures of MACH Series

Switching loss reduced by 40%

ꢀꢀCharacteristics of high-speed diode series

Faster parasitic diode

2SK3313 (high speed)

2SK3310 (high speed)

V_DS=50V/div

I_D=0.5A/div

I_D=10A/div

0

V_GS=5V/div

P_D=0.5µJ/div

200ns/div

100ns/div

2SK3126 (conventional device)

2SK2842 (conventional device)

V_DS=50V/div

I_D=0.5A/div

I_D=10A/div

0

P_D=0.5µJ/div

V_GS=5V/div

200ns/div

0

100ns/div

30

12. π-MOS III Series (V_DSS= 800 V to 1000 V)

High-performance, high-speed devices for 200-V AC input-switching power supplies

ꢀꢀFeatures

• Low drive-power, high-speed devices (Qg reduced by 60%, tf reduced by 25%)

• Guaranteed V^GSS= ±30 V.

• Avalanche withstand capability guaranteed, superior withstand capability of parasitic diode

• Protection zener diode between gate and source

ꢀꢀLine-up

• π-MOS III

Qg

typ.

(nC)

R

DS(ON) (Ω)

Maximum Ratings

Package Type

Part Number

V

DSS (V)

I

D

(A)

3

PD (W)

typ.

3.0

1.9

1.3

1.0

15

max

3.6

2.2

1.7

1.2

20

V

GS(V)

10

ID(A)

25

34

55

68

6

1.5

15

2SK2603

2SK2883

2SK2605

2SK2884

2SK2604

2SK2746

2SK2606

2SK2607

2SK3301

2SK2845

2SK2733

2SK2718

2SK2608

2SK2700

2SK2719

800

900

100

75

TO-220AB

3

TO-220FL/SM

TO-220NIS

TO-220FL/SM

TO-3P(N)

3.0

3.5

4.0

0.5

1.5

3.0

2.5

3.5

4.0

8.0

5

45

100

125

150

85

5

7

TO-3P(N)

TO-3P(N)IS

TO-3P(N)

PW-Mold

DP

8

150

20

9

1

15

21

25

45

28

55

58

70

58

70

65

8.0

5.6

3.73

3.7

2.3

2.0

1.1

1.05

1.2

1.05

1.4

9.0

6.4

4.3

2.5

1.4

1.25

1.4

1.25

1.7

1

40

60

TO-220AB

TO-220NIS

TO-220AB

TO-220NIS

TO-3P(N)

1

2.5

3

40

100

40

3

125

150

45

2SK2610

2SK2717

2SK3700

2SK2749

2SK2847

2SK3017

2SK2611

2SK2968

2SK2613

900

5

TO-3P(N)

TO-220NIS

TO-3P(N)

TO-3P(N)IS

TO-3P(N)

5

45

7

150

85

8

8.5

9

90

150

10

8

1000

• π-MOS IV

Qg

typ.

(nC)

R

DS(ON) (Ω)

Maximum Ratings

Package Type

Part Number

V

DSS (V)

800

I

D

(A)

7

P

D

(W)

typ.

1.35

1.3

max

1.7

V

GS(V)

10

I

D

(A)

3.5

4.0

35

38

2SK3633

2SK3473

150

TO-3P(N)

900

9

1.6

10

31

Power Modules

Power modules enable high-density mounting and are the simples of all multi-chip devices in

structural terms. Use of these modules enables the construction of compact power supplies for

electronic equipment.

ꢀꢀLine-up

• S-10M Series (4in1)

Maximum Ratings

Electrical Characteristics (Ta = 25ºC)

Polarity and

Circuit

Configuration

P

T

RDS(ON)

4-V Drive

Part Number

I

D

V

(V)

DSS

(Ta = 25ºC)

(Ω)

V

GS

ID

(A)

(W)

(V)

(typ.)

0.12

0.28

0.16

0.20

0.12

0.16

(max)

0.16

0.35

0.19

0.30

0.16

0.19

MP4210

MP4209

MP4211

MP4208

60

5

3

4

10

2.5

2.0

ꢀ

N-ch x 4

P-ch x 4

100

–60

60

–5

5

–10

10

–2.5

2.5

N-ch x 2 +

P-ch x 2

ꢀ

MP4212

4

–60

–5

–10

–2.5

• S-12M Series (4in1, 6in1)

Maximum Ratings

Electrical Characteristics (Ta = 25ºC)

Polarity and

Circuit

Configuration

RDS(ON)

P

T

4-V Drive

Part Number

I

D

V

(V)

DSS

(Ω)

(Ta = 25ºC)

V

GS

ID

(A)

(W)

(V)

(typ.)

0.28

(max)

0.35

N-ch x 2 +

P-ch x 2

ꢀ

MP4411

100

3

5

4.4

10

2.0

MP4412

MP4410

4.4

0.17

0.23

10

2.5

ꢀ

with FB-Di

N-ch x 4

60

5

0.12

0.16

0.19

10

2.5

N-ch x 3 +

P-ch x 3

MP6404

4.4

ꢀ

–60

–5

–10

–2.5

• F-12M Series (4in1, 6in1)

Maximum Ratings

Electrical Characteristics (Ta = 25ºC)

Polarity and

Circuit

Configuration

RDS(ON)

P

T

4-V Drive

Part Number

I

D

V

(V)

DSS

(Ω)

(Ta = 25ºC)

V

GS

ID

(A)

(W)

(V)

(typ.)

0.17

(max)

0.23

N-ch x 2 +

P-ch x 2

MP4711

100

5

36

10

2.5

ꢀ

with FB-Di

32

Power MOSFET Product List

Main Characteristics

Part

Main Characteristics

Part

Number

Series

π-MOS

Package Type

Series

Package Type

V_DSS

(V)

I_D

(A)

R

DS(ON) max Page

(Ω)

V_DSS

(V)

I_D

(A)

R

DS(ON) max Page

(Ω)

Number

2SK1486

π-MOS .5 TO-3P(L)

300

1000

180

32

12

10

0.095

1.0

– 10

– 12

– 14

2SJ200

2SJ201

2SJ304

2SJ312

TO-3P(N)

– 180

– 200

– 60

0.83

0.63

0.12

2SK1489

2SK1529

2SK1530

2SK1544

TO-3P(L)

TO-3P(N)

π-MOS .5

π-MOS

TO-3P(N)

2

0.83

TO-220NIS

TO-220FL/SM

TO-220NIS

PW-Mold

L -π-MOS

2

π-MOS

– 60

200

500

12

25

0.63

0.2

L -π-MOS

π-MOS .5 TO-3P(L)

– 1

– 5

2SJ313

2SJ315

π-MOS

– 180

– 60

5.0

2

0.25

TO-220FL/SM

L -π-MOS

2SK1930

2SK2013

1000

180

4

1

3.8

5.0

π-MOS .5

π-MOS

2

TO-220NIS

– 30

– 1

2SJ334

2SJ338

2SJ349

2SJ360

2SJ377

2SJ378

L -π-MOS

TO-220NIS

– 60

– 180

– 60

P 25

0.038

5.0

2SK2162 π-MOS

180

60

5.0

PW-Mold

TO-3P(N)

1

π-MOS

PW-Mold

TO-220NIS

PW-Mini

PW-Mold

TPS

2

2SK2173

2SK2200

50

0.017

P 24

L -π-MOS

– 20

– 1

P 25

L -π-MOS

0.045

0.73

2

L -π-MOS

TPS

100

3

0.35

P 24

L -π-MOS

– 60

2

2SK2201 L -π-MOS

PW-Mold

– 5

L -π-MOS

– 60

0.19

2

L -π-MOS

2SK2229 L -π-MOS

TPS

60

5

0.16

0.046

0.03

P 24

2

2SK2231 L -π-MOS

PW-Mold

TO-220NIS

TO-3P(N)

– 12

– 20

– 30

– 5

L -π-MOS

TO-220NIS

– 100

2SJ380

2SJ401

2SJ402

2SJ407

0.21

2

2SK2232 L -π-MOS

25

45

L -π-MOS

TO-220FL/SM – 60

0.045

2

L -π-MOS

2SK2233

P 25

P 28

L -π-MOS

0.038

1.0

2

TO-220NIS

– 200

2SK2266 L -π-MOS

TO-220FL/SM

60

45

0.03

P 24

π-MOS

2

– 16

– 5

P 25

2SK2267 L -π-MOS

TO-3P(L)

60

700

60

5

0.011

1.7

L -π-MOS

TO-220FL/SM – 100

2SJ412

2SJ438

0.21

0.19

2

2SK2274

TO-220NIS

TO-220FL/SM

TO-220NIS

TO-3P(N)

L -π-MOS

TO-220NIS

– 60

– 16

π-MOS .5

2

π-MOS

– 5

– 9

2SK2311 L -π-MOS

25

45

60

0.046

0.017

0.011

P 24

2SJ439

2SJ440

2SJ464

PW-Mold

0.2

0.8

2

2SK2312

60

TO-3P(N)IS

L -π-MOS

– 180

2

2SK2313 L -π-MOS

60

L-π-MOS

– 18

– 2

TO-220NIS

PW-Mini

– 100

– 16

P 25

0.09

0.71

2

L -π-MOS

2SK2314

TO-220AB

TO-220NIS

100

200

27

0.085

0.4

P 24

P 28

2SJ465

2SJ507

2SJ508

π-MOS

2

2SK2350 π-MOS

8.5

LSTM

– 60

– 1

0.7

1.9

P 25

L-π-MOS

2

PW-Mini

– 100

L -π-MOS

2SK2376

TO-220FL/SM

TO-220NIS

60

45

5

0.017

0.8

P 24

P 28

L-π-MOS

2

2SK2381 π-MOS

200

LSTM

– 100

– 30

– 1

– 2

1.9

P 25

P 28

2SJ509

2SJ511

2SJ512

2SJ516

2SJ525

2SJ537

L-π-MOS

2

π-MOS

PW-Mini

TO-220NIS

0.45

1.25

0.8

2SK2382

TO-220NIS

200

60

15

36

20

0.18

0.03

0.085

P 28

P 24

L-π-MOS

2

– 250

– 5

2SK2385 L -π-MOS

π-MOS

2

L -π-MOS

100

– 6.5

– 5

2SK2391

2

2SK2398

2SK2399

2SK2400

2SK2401

2SK2417

2SK2445

L -π-MOS

TO-3P(N)

PW-Mold

60

100

200

250

60

45

5

0.03

0.23

0.18

0.5

P 24

L -π-MOS

TPS

– 30

– 50

0.12

0.19

P 25

2

LSTM

– 5

L -π-MOS

2

– 2.5

– 2

L -π-MOS

TPS

5

P 24

P 28

P 24

π-MOS

PW-Mold

TO-3P(N)

TFP

– 200

– 250

– 180

– 100

P 28

P 18

P 26

2.0

2SJ567

2SJ610

2SJ618

2SJ619

π-MOS

TO-220FL/SM

TO-220NIS

TO-3P(N)

15

7.5

50

2.55

0.37

0.21

– 10

– 16

2

L -π-MOS

0.018

2

– 18

– 5

4

2SJ620

L -π-MOS

TFP

– 100

– 60

1000

100

0.09

0.17

2SK2466

2SK2467

2SK2493

2SK2507

2SK2508

U-MOS

π-MOS

TO-220NIS

TO-3P(N)IS

PW-Mold

100

180

16

30

9

0.046

0.8

P 26

U-MOS

PW-Mold

2SJ668

π-MOS .5 TO-220AB

π-MOS .5 TO-3P(N)

3.8

5

0.1

P 25

P 24

P 28

P 29

2SK1119

2SK1120

2SK1359

2SK1365

2SK1381

2SK1382

2

L -π-MOS

TO-220NIS

50

25

13

0.046

0.25

8

1.8

π-MOS

π-MOS .5

250

TO-3P(N)

TO-3P(N)IS

TO-3P(N)

TO-3P(L)

5

3.8

1000

100

7

1.8

2SK2542

2SK2543

2SK2544

TO-220AB

TO-220NIS

TO-220AB

500

600

8

6

0.85

1.25

2

L -π-MOS

50

60

0.032

0.02

π-MOS

2

100

L -π-MOS

33

Power MOSFET Product List

Main Characteristics

Part

Main Characteristics

Part

Number

Series

π-MOS

Package Type

Series

π-MOS

Package Type

V_DSS

(V)

I_D

(A)

R

DS(ON) max Page

(Ω)

V_DSS

(V)

I_D

(A)

RDS(ON) max Page

(Ω)

Number

2SK2842

2SK2843

2SK2844

2SK2545

2SK2549

TO-220NIS

PW-Mini

600

16

6

1.25

0.29

P 29

P 25

500

600

30

12

10

35

0.52

0.75

0.02

P 29

P 24

TO-220NIS

TO-220AB

DP

π-MOS

2

π-MOS

2

2SK2550

2SK2551

2SK2598

2SK2599

2SK2601

2SK2602

2SK2603

2SK2604

L -π-MOS

TO-3P(N)

TO-220FL/SM

TPS

50

45

50

13

2

0.03

0.011

0.25

3.2

P 24

P 28

P 29

P 31

L -π-MOS

2

2SK2845 π-MOS

900

600

900

500

1

2

8

3

9.0

5.0

1.4

3.2

P 31

P 29

P 31

P 29

L -π-MOS

2SK2846

250

500

600

800

π-MOS

TPS

π-MOS

2SK2847 π-MOS

TO-3P(N)IS

TO-220NIS

PW-Mold

TO-220AB

TO-220NIS

π-MOS

2SK2862

2SK2865

2SK2866

2SK2882

TO-3P(N)

TO-220AB

TO-3P(N)

10

6

1.0

π-MOS

1.25

3.6

600

150

2

10

18

5.0

P 29

P 28

P 31

P 24

P 29

P 28

P 29

P 28

P 29

P 24

P 28

P 29

P 26

P 22

P 29

P 28

3

0.75

0.12

π-MOS

5

2.2

π-MOS

2SK2605

2SK2606

TO-220NIS

TO-3P(N)IS

800

5

2.2

1.2

P 31

TO-220FL/SM

TO-220NIS

TO-220FL/SM

TO-220AB

2SK2883 π-MOS

800

50

3

5

3.6

8.5

2SK2884 π-MOS

2.2

2

π-MOS

2SK2607

2SK2608

TO-3P(N)

TO-220AB

800

900

9

3

1.2

4.3

P 31

2SK2886

45

10

7.5

16

14

18

20

10

8.5

15

2

0.02

L -π-MOS

2SK2889 π-MOS

600

250

600

500

200

400

600

60

0.75

0.5

2SK2914

2SK2915

2SK2916

2SK2917

2SK2920

2SK2610

2SK2611

π-MOS

TO-3P(N)

900

5

9

2.5

1.4

P 31

π-MOS

TO-3P(N)

0.4

TO-3P(N)IS

0.4

2SK2613

2SK2614

2SK2615

2SK2661

2SK2662

2SK2679

2SK2698

2SK2699

2SK2700

2SK2717

2SK2718

TO-3P(N)

DP

1000

50

8

20

2

1.7

0.046

0.3

1.5

1.2

0.4

0.65

4.3

2.5

6.4

4.3

9.0

P 32

P 24

P 29

2

L -π-MOS

0.27

0.8

2

L -π-MOS

PW-Mini

60

PW-Mold

TO-220AB

TO-220NIS

TO-3P(N)

TO-220NIS

TO-3P(N)

TO-220AB

500

400

500

600

900

5

π-MOS

2SK2949 π-MOS

TO-220FL/SM

0.55

0.4

5

2SK2952

2SK2953

2SK2961

2SK2962

2SK2963

TO-220NIS

TO-3P(N)IS

LSTM

π-MOS

5.5

15

12

3

2

0.27

0.7

L -π-MOS

2

100

30

1

LSTM

L -π-MOS

2

L -π-MOS

PW-Mini

1

0.7

2

5

2

0.18

0.26

0.068

1.25

5.8

L -π-MOS

PW-Mini

2SK2964

2SK2965

2.5

3

π-MOS

TO-220NIS

200

250

900

60

11

30

10

45

55

70

5

2SK2719 π-MOS

π-MOS

TO-3P(N)

2SK2967

2SK2968

2SK2733 π-MOS

1

2

2SK2744

2SK2745

TO-3P(N)

50

45

50

7

0.02

0.0095

1.7

P 24

P 31

P 29

2SK2985 U-MOS

2SK2986 U-MOS

TO-220NIS

L -π-MOS

2

TO-3P(N)

TO-220FL/SM

60

5.8

L -π-MOS

60

5.8

2SK2746 π-MOS

TO-3P(N)

800

900

600

500

2SK2987 U-MOS

TO-3P(N)

LSTM

2

50

0.15

1.5

2SK2749

TO-3P(N)

7

2.0

2SK2989

L -π-MOS

π-MOS

500

200

250

5

2SK2750

TO-220NIS

TO-220FL/SM

3.5

8

2.2

2SK2991 π-MOS

2SK2992 π-MOS

TO-220FL/SM

PW-Mini

π-MOS

1

3.5

2SK2776 π-MOS

0.85

π-MOS

20

0.105

2SK2993

2SK2995

2SK2996

TO-220FL/SM

TO-3P(N)IS

TO-220NIS

2SK2777 π-MOS

TO-220FL/SM

DP

600

60

6

20

27

1.25

P 29

P 24

2

L -π-MOS

250

600

30

10

0.068

1.0

P 28

P 29

2SK2782

0.055

0.085

π-MOS

2

2SK2789 L -π-MOS

TO-220FL/SM

100

LSTM

500

900

50

0.5

8.5

45

2

18

P 29

P 31

P 24

P 29

2SK2998 π-MOS

2SK3017 π-MOS

π-MOS

2SK2835

2SK2837

2SK2838

2SK2841

TPS

200

500

400

5

20

0.8

P 28

P 29

TO-3P(N)IS

1.25

0.03

5.0

TO-3P(N)

TO-220FL/SM

TO-220AB

0.27

1.2

2

2SK3051 L -π-MOS

TO-220FL/SM

TO-220NIS

5.5

10

π-MOS

2SK3067

600

0.55

34

Main Characteristics

Part

Number

Part

Number

Series

Package Type

Series

Package Type

V_DSS

(V)

I_D

(A)

R

DS(ON) max Page

(Ω)

V_DSS

(V)

I_D

(A)

RDS(ON) max Page

(Ω)

2SK3068 π-MOS

2SK3084 U-MOS

TO-220FL/SM

TO-220AB

500

100

600

30

12

30

3.5

40

45

20

70

10

45

60

6

0.52

0.046

2.2

P 29

P 26

P 29

P 24

P 29

P 24

P 29

P 24

2SK3440

2SK3441

2SK3442

2SK3443

2SK3444

2SK3445

2SK3453

2SK3462

2SK3466

2SK3471

U-MOS

TFP

60

50

75

45

30

25

20

0.008

0.0058

0.02

P 18

2SK3085 π-MOS

100

150

200

250

P 18

U-MOS

2

L -π-MOS

0.03

0.02

0.27

0.007

0.65

0.012

0.007

1.55

0.055

0.082

0.105

2SK3089

TO-220FL/SM

TO-3P(SM)

π-MOS

2

2SK3090 L -π-MOS

30

π-MOS

2SK3117

2SK3125

2SK3126

π-MOS

500

30

2

TO-3P(SM)

L -π-MOS

TO-3P(N)IS

PW-Mold

TFP

700

250

500

450

900

10

3

1.0

1.7

1.5

18

P 29

P 28

P 16

P 29

P 31

P 28

450

30

π-MOS

TO-220NIS

TO-220FL/SM

TO-3P(N)

2

2SK3127 L -π-MOS

5

π-MOS

2

L -π-MOS

0.5

2SK3128

2SK3129

30

PW-Mini

PW-Mold

TO-3P(N)

π-MOS

TO-3P(N)

50

2SK3472

2SK3473

2SK3497

2SK3498

2SK3499

2SK3506

1

9

4.6

1.6

TO-220NIS

600

P 30

P 29

2SK3130 π-MOS

π-MOS

TO-3P(L)

500

50

0.11

2SK3131

10

1

π-MOS

TO-3P(N)

180

400

30

0.15

π-MOS

0.095

2SK3132

PW-Mold

TFP

5.5

P 29

P 18

10

45

8

0.55

0.02

0.85

2.45

2SK3176 π-MOS

2SK3205

TO-3P(N)

PW-Mold

200

150

30

5

0.052

0.5

P 28

π-MOS

TO-3P(N)

TFP

2SK3236 U-MOS

TO-220NIS

60

700

900

500

35

10

0.02

1.0

20

P 26

P 29

P 31

P 29

500

450

P 18

2SK3538

2SK3543

2SK3544

2SK3561

2SK3562

2SK3563

2SK3564

2SK3565

2SK3566

2SK3567

π-MOS

2SK3265

2SK3301

2SK3302

TO-220NIS

2

π-MOS

1

PW-Mold

TPS

450

500

600

500

TFP

13

8

0.4

P 18

P 22

18

0.5

TO-220SIS

0.85

1.25

1.5

2SK3309 MACH

2SK3310 MACH

TO-220FL/SM

TO-220NIS

450

10

0.65

P 30

6

5

π-MOS

TO-220FL/SM

TO-220NIS

TO-3P(N)

TO-220NIS

PW-Mold

TPS

600

500

6

1.25

0.62

P 30

2SK3312

2SK3313

π-MOS

TO-220SIS

900

600

3

5

4.3

2.5

6.4

2.2

P 22

12

π-MOS

500

250

600

500

450

150

250

30

15

5

0.49

1.8

1.0

9.0

3.2

4.6

P 30

P 28

P 29

2SK3314

2SK3316

2SK3342

2SK3371

2.5

3.5

π-MOS

4.5

1

2SK3568

2SK3569

2SK3633

2SK3662

2SK3667

2SK3669

2SK3670

2SK3742

2SK3757

2SK3767

2SK3797

π-MOS

U-MOS

π-MOS

TO-220SIS

TO-3P(N)

TO-220NIS

TO-220SIS

PW-Mold

500

600

800

60

12

10

7

0.52

0.75

1.3

P 22

P 31

2

2SK3373 π-MOS

2SK3374 π-MOS

1

35

7.5

10

0.67

5

0.0095 P 26

2

TFP

2SK3387 L -π-MOS

18

20

75

70

12

10

13

600

100

150

900

450

600

1.0

P 22

P 27

0.012

0.105

0.005

0.006

0.52

P 18

P 30

TFP

2SK3388

2SK3389

π-MOS

0.125

1.7

TFP

U-MOS

LSTM

TFP

2SK3397 U-MOS

2SK3398 π-MOS

TO-220SIS

2.5

P 22

30

TFP

2

2.45

4.5

500

600

450

TO-220FL/SM

TO-220NIS

2SK3399

2SK3403

2SK3407

2SK3417

MACH

π-MOS

2

0.75

13

0.49

3.5

0.4

10

5

0.65

1.8

2SK3798

2SK3799

2SK3842

π-MOS

U-MOS

TO-220SIS

TFP

900

60

3.5

9

TO-220FL/SM 500

TO-220FL/SM 600

P 30

P 18

1.5

10

75

1.0

2SK3437 MACH

2SK3438 π-MOS

2SK3439 U-MOS

75

0.0058 P 18

TFP

600

30

1.0

TPC6001

TPC6002

VS-6

20

30

0.03

P 17

U-MOS

6

0.03

P 17

0.005

35

Power MOSFET Product List

Main Characteristics

Part

Main Characteristics

V_DSSI_D

(V) (A)

Part

Number

Series

U-MOS

Package Type

Series

U-MOS

Package Type

V_DSS

(V)

I_D

(A)

R

DS(ON) max Page

(Ω)

RDS(ON) max Page

Number

(Ω)

30

20

TPC8402

SOP-8

– 30/30 – 4.5/5 35/50

– 30/30 – 4.5/6 55/33

P 14

TPC6003

TPC6004

TPC6005

TPC6101

TPC6102

TPC6103

TPC6104

TPC6105

TPC6201

TPC8001

VS-6

SOP-8

6

0.024

P 17

P 14

U-MOS

π-MOS

U-MOS

π-MOS

6

TPC8403

U-MOS

SOP-8

0.024

0.028

0.06

30

– 20

– 30

– 12

– 20

30

TPC8A01

TPCA8003-H

TPCA8004-H

TPCA8005-H

TPCA8101

30/30

30

6/8.5 0.025/0.018

35 0.0066

40 0.0046

27 0.009

SOP-8

P 12

P 13

P 15

Ultra high-speed

U-MOS

Ultra high-speed

U-MOS

Ultra high-speed

U-MOS

– 4.5

– 2.7

2.5

7

SOP Advance

TSSOP-8

VS-8

0.06

30

0.035

0.04

30

U-MOS

– 30

200

250

200

250

– 30

– 20

– 40 0.007

– 40 0.006

– 40 0.0042

1.3 0.8

TPCA8102 U-MOS

TPCA8103 U-MOS

TPCS8004 π-MOS

0.11

0.095

0.02

30

13

π-MOS

U-MOS

TPC8003

30

0.007

0.05

TPCS8006

TPCS8007

TPCS8008

TPCS8101

TPCS8102

TPCS8104

TPCS8105

TPCS8204

TPCS8205

TPCS8208

TPCS8209

TPCS8210

TPCS8211

TPCS8212

TPCS8302

TPCS8303

TPCF8001

1.1 1

SOP-8

5

1.9 0.5

TPC8004

High-speed

U-MOS

High-speed

U-MOS

1.8 0.55

30

7

0.027

0.016

0.4

TPC8006-H

TPC8010-H

TPC8012-H

TPC8014

30

11

– 6 0.025

– 6 0.02

π-MOS

1.8

11

200

30

SOP-8

U-MOS

– 30

20

– 11 0.012

– 11 0.0135

0.014

0.008

0.0057

0.0066

0.0046

0.009

0.0065

0.04

High-speed

U-MOS

High-speed

U-MOS

Ultra high-speed

U-MOS

Ultra high-speed

U-MOS

Ultra high-speed

U-MOS

High-speed

U-MOS

High-speed

U-MOS

13

30

TPC8015-H

TPC8016-H

TPC8017-H

TPC8018-H

TPC8020-H

TPC8104-H

TPC8105-H

TPC8107

6

5

0.017

0.045

0.017

0.03

15

30

20

30

15

P 14

20

6

30

18

20

5

30

13

20

5

0.03

P 15

P 17

– 30

– 5

– 7

– 13

20

6

0.024

0.0035

20

U-MOS

0.0007

6

– 20

– 5

– 11

– 10

– 8

0.0013

0.02

SOP-8

– 30

– 40

P 14

TPC8108

TPC8109

TPC8110

– 20

– 5 0.021

0.0025

U-MOS

0.025

30

7

TPC8111

TPC8112

TPC8113

TPC8114

TPC8115

U-MOS

SOP-8

– 30

– 20

30

– 11

– 13

– 11

– 18

– 10

6

0.012

0.006

0.01

P 14

TPCF8101

TPCF8102

TPCF8103

TPCF8104

TPCF8201

TPCF8301

TPCF8302

TPCF8303

– 12

– 20

– 30

20

– 6 0.028

– 6 0.03

P 17

U-MOS

VS-8

– 2.7 0.11

– 6 0.0028

0.0045

0.01

3

0.049

– 20

– 2.7 0.11

– 3 0.0059

TPC8203

TPC8206

TPC8207

TPC8208

TPC8209

TPC8210

0.021

0.05

60

7

20

6

0.02

U-MOS

SOP-8

20

30

5

0.05

0.04

P 14

TPCF8402

TPCF8A01

– 30/30

– 3.2/4 0.11/0.049 P 17

U-MOS

VS-8

20

3

0.049

P 17

U-MOS

SOP-8

30

8

5.5

0.015

0.036

0.035

0.03

P 14

TPCF8B01

TPCP8201

TPCP8401

TPCP8402

TPCP8J01

U-MOS

VS-8

PS-8

– 20

– 2.7 0.11

P 17

30

4.2 0.05

TPC8211

TPC8303

– 30

– 20

– 4.5

– 5

– 30/30 – 3.4/4.2 0.048/0.072 P 17

– 12/20 – 5.5/0.1 0.038/3 P 17

TPC8305

TPC8401

– 30/30 – 4.5/6 35/21

– 32/50

– 6/0.1 0.035

P 17

36

Power MOSFET Superseded Products

The product number in the left-hand column below are soon to be superseded. When ordering, please

choose from among the recommended products in the right-hand column.

Superseded Products

Electrical Characteristics

Part Number

Package Type

V_DSS

(V)

I_D

(A)

R_DS(ON)

max(Ω)

V_DSS

(V)

I_D

(A)

R_DS(ON)

max(Ω)

2SK2057

2SK2235

2SK2741

2SK2742

2SK2836

2SK2839

2SK2985

2SK2986

2SK2987

TPC8005-H

TPC8102

TPC8201

TPC8204

TPCS8201

TPCS8206

TPC8202

TPC8106-H

TPC8007-H

TPCS8203

TPC8103

TPC8002

500

250

60

20

2

0.34

2

TO-3P(N)

PW-Mold

SP

2SK2837

2SK3462

2SK2231

2SK2201

2SK3371

TPCF8001

500

250

60

20

3

0.27

TO-3P(N)

PW-Mold

VS-8

1.7

5

0.16

0.35

9

5

0.16

100

600

30

3

SP

100

600

30

3

0.35

1

SP

1

9

10

45

55

70

11

– 6

5

0.04

0.0058

0.016

0.04

0.05

0.02

0.03

0.05

0.02

0.017

0.045

0.013

0.014

0.024

SP

7

0.023

0.0058

0.016

0.04

60

TO-220NIS

TO-220FL/SM

TO-3P(N)

SOP-8

2SK3844

2SK3845

ꢀ

60

45

70

11

– 7

5

TO-220NIS

TO-3P(N)

SOP-8

60

ꢀ

60

30

TPC8010-H

TPC8105-H

TPC8209

30

– 30

30

SOP-8

– 30

30

SOP-8

0.05

SOP-8

20

6

SOP-8

TPC8207

20

6

0.02

SOP-8

20

5

TSSOP-8

SOP-8

TPCS8209

TPCS8210

TPC8208

20

5

0.03

TSSOP-8

SOP-8

20

5

20

5

0.03

20

5

20

5

0.05

– 30

30

-8

13

6

SOP-8

TPC8109

– 30

30

– 10

13

6

0.02

SOP-8

TPC8009-H

TPCS8211

TPC8108

0.01

SOP-8

20

TSSOP-8

SOP-8

20

0.024

0.013

0.014

0.024

TSSOP-8

SOP-8

– 30

30

– 11

11

5

– 30

30

– 11

11

6

SOP-8

TPC8014

SOP-8

TPC8207

20

TSSOP-8

TPCS8212

20

TSSOP-8

ꢀ: Under development

37

Power MOSFET Final-Phase and Discontinued Products

(1) Final-Phase Products

Recommended

Replacement Products

Recommended

Replacement Products

Part Number

2SJ147

2SJ304

TPC8005-H

TPC8007-H

TPC8102

TPC8010-H

TPC8009-H

TPC8105-H

TPC8111/TPC8108

TPC8109

2SJ1347

2SK794

2SK2314

2SK2610

2SK2391

2SK2601

2SK2698

2SK2266

2SK2952

2SK2698

2SK2776

2SK2232

2SK2777

2SK2385

2SK2233

2SK2542

2SK1349

2SK1488

2SK1652

2SK1720

2SK1854

2SK1856

2SK1864

2SK1882

2SK1915

2SK1997

2SK1998

2SK2387

TPC8103

TPC8106-H

TPC8201

TPC8209

TPC8202

TPC8208

TPC8204

TPC8207

TPCS8201

TPCS8203

TPCS8206

TPCS8207

TPCS8209

TPCS8211

TPCS8210

TPCS8212

38

( )

2 Discontinued Products

Recommended

Replacement Products

Recommended

Replacement Products

Recommended

Replacement Products

Part Number

2SJ91

2SJ200

2SK788

2SK789

2SK790

2SK791

2SK792

2SK793

2SK849

2SK850

2SK851

2SK856

2SK857

2SK858

2SK888

2SK889

2SK890

2SK891

2SK892

2SK893

2SK894

2SK895

2SK896

2SK942

2SK943

2SK944

2SK945

2SK1029

2SK1078

2SK1112

2SK1113

2SK1114

2SK1115

2SK1116

2SK1117

2SK1118

2SK1124

2SK1213

2SK1251

2SK1252

2SK1333

2SK1344

2SK1346

2SK1348

2SK1350

2SK1351

2SK1352

2SK1356

2SK1357

2SK1358

2SK1362

2SK1363

2SK1377

2SK1378

2SK1379

2SK1380

2SK1487

2SK1513

2SK1531

2SK2698

2SK2608

2SK2610

2SK2233

2SK2466

2SK2967

2SK2385

2SK2233

2SK2750

2SK2350

2SK2314

2SK2350

2SK2382

2SK2662

2SK2386

2SK2542

2SK2601

2SK2695

2SK2232

2SK2967

2SK2599

2SK2698

2SK2615

2SK2231

2SK2201

2SK2232

2SK2544

2SK2545

2SK2233

2SK2602

2SK2231

2SK2201

2SK2698

2SK2232

2SK2391

2SK2382

2SK2662

2SK2543

2SK2700

2SK2610

2SK2611

2SK2610

2SK2847

2SK2679

2SK2841

2SK2173

2SK2267

2SK2601

2SK2698

2SK1542

2SK1574

2SK1600

2SK1601

2SK1602

2SK1603

2SK1641

2SK1642

2SK1643

2SK1649

2SK1650

2SK1651

2SK1653

2SK1692

2SK1717

2SK1719

2SK1721

2SK1722

2SK1723

2SK1745

2SK1746

2SK1766

2SK1767

2SK1768

2SK1769

2SK1792

2SK1805

2SK1855

2SK1858

2SK1865

2SK1879

2SK1913

2SK1927

2SK1928

2SK1929

2SK2030

2SK2038

2SK2039

2SK2056

2SK2077

2SK2078

2SK2088

2SK2089

2SK2107

2SK2149

2SK2150

2SK2222

2SK2236

2SK2237

2SK2319

2SK2320

2SK2351

2SK2352

2SK2386

2SK2388

2SK2402

2SK2376

2SK2542

2SK2603

2SK2608

2SK2603

2SK2718

2SK2993

2SK2952

2SK2717

2SK2610

2SK2719

2SK2601

2SK2312

2SK2749

2SK2615

2SK2231

2SK2991

2SK2699

2SK2837

2SK2865

2SK2417

2SK2750

2SK2614

2SK2599

2SK2376

2SK2543

2SK2698

2SK2883

2SK2776

2SK2398

2SK2750

2SK2789

2SK2884

2SK2231

2SK2604

2SK2610

2SK2605

2SK2746

2SK2607

2SK2401

2SK2884

2SK2401

2SK2601

2SK2698

2SK2604

2SK2662

2SK2543

2SK2746

2SK2607

2SK2544

2SK2545

2SK2661

2SK2750

2SJ92

2SJ200

2SJ123

2SJ124

2SJ126

2SJ183

2SJ224

2SJ238

2SJ239

2SJ240

2SJ241

2SJ315

2SK271

2SK272

2SK324

2SK325

2SK355

2SK356

2SK357

2SK358

2SK385

2SK386

2SK387

2SK388

2SK405

2SK417

2SK418

2SK419

2SK420

2SK421

2SK422

2SK442

2SK447

2SK525

2SK526

2SK527

2SK528

2SK529

2SK530

2SK531

2SK532

2SK537

2SK538

2SK539

2SK568

2SK572

2SK573

2SK578

2SK643

2SK644

2SK672

2SK673

2SK674

2SK678

2SK693

2SK694

2SK708

2SJ304

2SJ377

2SJ312

2SJ360

2SJ377

2SJ349

2SJ401

2SJ377

2SK1529

2SK2698

2SK387

2SK388

2SK2381

2SK2417

2SK2698

2SK2882

2SK2508

2SK1529

2SK2232

2SK2662

2SK2961

2SK2232

2SK2508

2SK2382

2SK2417

2SK2232

2SK2662

2SK2232

2SK2733

2SK2719

2SK2610

–

2SK1641

2SK2882

2SK2601

2SK2232

2SK2698

39

Package List

1. Compact Surface-Mount Packages

To meet requirements for compact and

thin equipment, Toshiba offers various

packages with power dissipation of 1.0 to

150 W and drain current of 1 to 50 A.

In addition, we offer devices housed in

the SOP-8 and TSSOP-8 packages. These

devices consist of input/output isolated

TFP Series MOSFETs and trench

100

NEW

SOP

Advance

TO-3P

(SM)

TFP

NEW

VS -8

P S -8

TO-220

(SM)

10

SOP-8

PW-MINI

PW-MOLD

DP

NEW

SP

VS-6

1.0

0.1

MOSFETs with ultra-low ON-resistance.

0.1

1.0

10

100

1000

Power Dissipation

P (W)

D

ꢀꢀVS-6

Unit: mm

Tape dimensions

4.0 ± 0.1

+0.1

ø1.5

0.0

-

0.3 ± 0.05

A

6

4

B

B'

2.0 ± 0.08

A'

4.0 ± 0.1

1.4 ± 0.1

1.55 ± 0.1

B

B'

3.05

± 0.1

11.4

9.0

1

3

0.3 ± 0.1

0.95

5.0

Reel dimensions

2.9 ± 0.2

+0.25

0.25

0.05

-

0.15

Packing quantity

Tape dimensions

3000pcs / reel

ꢀꢀVS-8

Unit: mm

2.9 ± 0.1

4.0

2.0

±

0.1

+0.1

0.3+0.1/ -0.05

0.025

ø1.5

0.0

-

A

±

0.1

M

A

0.2

± 0.05

5

8

B

A

0.95

± 0.1

4.0

± 0.1

A

ø1.1

± 0.1

1

4

B

3.1

± 0.1

0.65

11.4

9.0

5.0

Reel dimensions

0.05 S

S

A

Packing quantity

0.475

4000pcs / reel

40

ꢀꢀPS-8

Unit: mm

Tape dimensions

+0.1

0.2 ± 0.05

ø1.50

4.0 ± 0.1

0.0

-

0.33

±

0.05

M

0.05

A

2.0 ± 0.05

0.95 ± 0.05

8

5

4.0 ± 0.1

1.15 ± 0.05

3.1 ± 0.1

1

4

0.33

± 0.05

B

0.17 ± 0.02

0.475

M

0.05

B

11.4

9.0

0.65

2.9

Reel dimensions

5.0

±

0.1

A

S

0.025 S

Packing quantity

3000pcs / reel

ꢀꢀTSSOP-8

Unit: mm

Tape dimensions

±

0.3 0.05

±

4.0 0.1 2.0 0.05

ø1.55 ± 0.05

8

5

±

8.0 0.1

± 0.05

±

1.55

1.1 0.1

6.9 0.2

±

1

4

(0.525)

0.25 0.05

0.65

3.5 ± 0.2

6.6

±

0.1

3.3 max

18.5 (max)

Reel dimensions

±

3.0 0.1

120

±

3

13.5 ± 0.5

±

R

135

0.6 0.2

.5

0

R

10

±

0.05

.0

4

.5

ø13 ± 0.2

0

±

.0

2

Packing quantity

3000pcs / reel

41

Package List

ꢀꢀSOP-8

Unit: mm

Tape dimensions

4.0 ± 0.1

8

5

0.3 ± 0.05

ø1.55 ± 0.05

2.0 2.0

6.5 ± 0.1

1

4

6.8

0.595

0.4 ± 0.1

8.0 ± 0.1

2.55 ± 0.1

0.25 M

1.27

18.5 (max)

13.5 0.5

Reel dimensions

5.5 max

120

±

3

±

5.0 ± 0.2

R

135

5

.

R

10

0

±

.0

4

.5

ø13 ± 0.2

0

±

.0

2

0.5 ± 0.2

0.1

Packing quantity

Tape dimensions

3000pcs / reel

ꢀꢀSOP Advance

Unit: mm

4.0

± 0.1

0.3

± 0.05

ø1.55

± 0.05

2.0 2.0

6.6

0.1

6.4

±

0.4

±

0.1

5

1.27

M

0.05

0.15

A

8

1

4

1.2

± 0.1

±

0.05

ø1.7

± 0.1

8.0

± 0.1

4.25

± 0.2

1

4

0.595

8

5

0.8

± 0.1

18.5 (max)

13.5 0.5

Reel dimensions

120º

135

± 3

A

±

5.0

±

0.2

S

R

.5

0

R

10

±

.0

4

S

0.05

.5

0

ø13

± 0.2

±

.0

2

Packing quantity

3000pcs / reel

42

ꢀꢀPW-Mini

Unit: mm

Tape dimensions

0.3 ± 0.05

+0.1

-0

4.0 ± 0.1

2.0 2.0

ø1.5

1.6 max

0.4 ± 0.05

4.6 max

1.7 max

5.1 ± 0.2

2.3

4.9 ± 0.2

0.9

1.65 ± 0.1

1.8 ± 0.1

8.0 ± 0.1

+ 0.08

-0.05

0.45

0.4

+ 0.08

0.05

+ 0.08

0.4 0.05

A

Reel dimensions

-

1.5 ± 0.1

75

41.5

+0.2

-0.0

98

0.9

1.1 ± 0.2

1

2

3

9.5

A'

1. Gate

2. Drain (heat sink)

3. Source

Packing quantity

Tape dimensions

1000pcs / reel

ꢀꢀDP

Unit: mm

6.8 max

ø3.0 ± 0.05

+0.1

-0

4.0 ± 0.1

2.0 ± 0.1

ø1.5

5.2 ± 0.2

0.6 max

0.3 ± 0.05

0.6 ± 0.15

6.8 ± 0.1

8.0 ± 0.1

0.95 max

2.7 ± 0.1

0.6 max

0.6 ± 0.15

2.3 2.3

2

17.5

± 1.5

Reel dimensions

40

120 ± 3

R

5

1

3

2 ± 0.5

R

± 2

120

2 ± 0.5

3 00±.50.5

10

± 1

2

±

0.5

2 ± 0.5

1. Gate

2. Drain (heat sink)

3. Source

Packing quantity

2000pcs / reel

43

Package List

ꢀꢀNew PW-Mold

Unit: mm

Tape dimensions

6.5 ± 0.2

5.2 ± 0.2

ø3.0 ± 0.05

+0.1

-0

4.0 ± 0.1

2.0 ± 0.1

ø1.5

0.6 max

0.3 ± 0.05

6.8 ± 0.1

8.0 ± 0.1

1.1 ± 0.2

2.7 ± 0.1

Reel dimensions

17.5

± 1.5

40

0.6 max

120 ± 3

2.3 ± 0.15 2.3 ± 0.15

R

5

2 ± 0.5

R

± 2

120

1

2

3

2 ± 0.5

3

± 0.5

10

± 1

0.8 max

0.6 ± 0.15

1.05 max

2

±

0.5

2 ± 0.5

1. Gate

Packing quantity

Tape dimensions

2. Drain (heat sink)

3. Source

2000pcs / reel

ꢀꢀTO-220SM

Unit: mm

+0.1

-0

0.4 ± 0.05

4.0 ± 0.1

2.0 ± 0.1

ø1.5

ø2.0 ± 0.1

10.3 max

1.32

0.1

10.8

0.1

±

0.1

5.2

± 0.1

12.0

±

0.76

Reel dimensions

120 ± 3

2.54 ± 0.25

25.4 ± 2

R

135

.5

R

6.5

0

60

1

2

3

±

.0

4.0

0.5

.5

0

±

ø13

±

0.5

.0

2

2 ± 0.5

1. Gate

2. Drain (heat sink)

3. Source

Packing quantity

1000pcs / reel

44

ꢀꢀTFP

Unit: mm

Tape dimensions

9.2 max

4.0 ± 0.1

12.0 ± 0.1

2.0 ± 0.1 ø1.5 ± 0.1

0.30 ± 0.05

0.4 ± 0.1

7.0 ± 0.2

1

9.5 ± 0.1

3.0 ± 0.1

ø2.0 ± 0.1

Reel dimensions

120 ± 3

25.5 ± 2

0.2 1.5 2.0 2.5

R

135

.5

R

10

00.5

±±

60

2

3

4

.0

4.0

ø13

±

0.5

1.0 ± 0.2 1.0 ± 0.2 3.6 ± 0.2

2 ± 0.5

1. Drain (heat sink)

2. Gate

3. Source1

4. Source2

Packing quantity

1500pcs / reel

45

Package List

2. Through-Hole Package

ꢀꢀLSTM

ꢀꢀPW-Mold (Straight)

Unit: mm

5.1 max

6.8 max

5.2 ± 0.2

0.6 max

0.75 max

1.0 max

0.8 max

0.6 max

0.95 max

0.6 max

0.6 ± 0.15

1.27

2.3 2.3

1

2

3

2.54

1

2

3

1. Source

2. Drain

3. Gate

1. Gate

2. Drain (Heat Sink)

3. Source

ꢀꢀDP (Straight)

ꢀꢀTPS

6.8 max

8.0 ± 0.2

0.6 max

5.2 ± 0.2

0.5

1.4 ± 0.1

1.05 ± 0.1

0.95 max

0.5 + 0.15

0.6 max

0.6 ± 0.15

-

0.05

0.5 + 0.15

-0.05

2.3

2.5 ± 0.5

1

2

3

1

2

3

1. Gate

1. Source

2. Drain

3. Gate

2. Drain (Heat Sink)

3. Source

ꢀꢀTO-220AB

ø3.6 ± 0.2

10.3 max

1.6 max

0.76

2.54 ± 0.25

1

2

3

1. Gate

2. Drain (Heat Sink)

3. Source

46

ꢀꢀTO-220NIS

ꢀꢀTO-220FL

ꢀꢀTO-3P(N)IS

ꢀꢀTO-220SIS

ꢀꢀTO-3P(N)

ꢀꢀTO-3P(L)

Unit: mm

ø 3.2 ± 0.2

10 ± 0.3

2.7 ± 0.2

10 ± 0.3

2.7 ± 0.2

1.14 ± 0.15

1.1

0.75 ± 0.15

2.54 ± 0.25

0.69 ± 0.15

A

2.54

2.54 ± 0.25

1

2

3

1

2

3

1. Gate

2. Drain

3. Source

1. Gate

2. Drain

3. Source

10.3 max

1.32

15.9 max

ø 3.2 ± 0.2

1.6 max

2.0 ± 0.3

0.76

+ 0.3

-0.25

1.0

5.45 ± 0.2

2.54 ± 0.25

1

2

3

1

2

3

1. Gate

2. Drain (Heat Sink)

3. Source

2. Drain (Heat Sink)

3. Source

ø 3.3 ± 0.2

20.5 max

3.5

15.8 ± 0.5

ø 3.6 ± 0.2

2.5

3.0

2.0

1.0 + 0.25

+ 0.3

-0.25

-

0.15

1.0

5.45 ± 0.15

5.45 ± 0.2

3.15 + 0.2

0.1

-

1

2

3

1

2

3

1. Gate

2. Drain

3. Source

2. Drain (Heat Sink)

3. Source

47

OVERSEAS SUBSIDIARIES AND AFFILIATES

(As of March 10, 2004)

2004-3

Toshiba America

Toshiba Electronics Europe GmbH

Toshiba Electronics Asia, Ltd.

Electronic Components, Inc.

Düsseldorf Head Office

Hansaallee 181, D-40549 Düsseldorf,

Germany

Hong Kong Head Office

BCE0017B

Headquarters-Irvine, CA

Level 11, Tower 2, Grand Century

Place, No.193, Prince Edward Road West,

Mongkok, Kowloon, Hong Kong

Tel: 2375-6111 Fax: 2375-0969

9775 Toledo Way, Irvine, CA 92618, U.S.A.

Tel: (949)455-2000 Fax: (949)859-3963

Tel: (0211)5296-0 Fax: (0211)5296-400

Boulder, CO (Denver)

3100 Araphahoe #500,

Boulder, CO 80303, U.S.A.

Tel: (303)442-3801 Fax: (303)442-7216

München Office

Büro München Hofmannstrasse 52,

D-81379, München, Germany

Tel: (089)748595-0 Fax: (089)748595-42

Beijing Office

Room 714, Beijing Fortune Building,

No.5 Dong San Huan Bei-Lu, Chao Yang District,

Beijing, 100004, China

Deerfield, IL (Chicago)

One Pkwy., North, #500, Deerfield,

IL 60015-2547, U.S.A.

France Branch

Les Jardins du Golf 6 rue de Rome 93561,

Rosny-Sous-Bois, Cedex, France

Tel: (1)48-12-48-12 Fax: (1)48-94-51-15

Tel: (010)6590-8796 Fax: (010)6590-8791

Chengdu Office

Suite 403A, Holiday Inn Crown Plaza 31, Zongfu Street,

Chengdu, 610016, Sichuan, China

Tel: (028)675-1773 Fax: (028)675-1065

Tel: (847)945-1500 Fax: (847)945-1044

Duluth, GA (Atlanta)

3700 Crestwood Pkwy, #160,

Duluth, GA 30096, U.S.A.

Italy Branch

Centro Direzionale Colleoni,

Palazzo Perseo 3,

I-20041 Agrate Brianza, (Milan), Italy

Tel: (039)68701 Fax: (039)6870205

Qingdao Office

Tel: (770)931-3363 Fax: (770)931-7602

Room B707, Full Hope Plaza,

12 Hong Kong Central Road, Qingdao,

Shandong, 266071, China

Beaverton/Portland, OR

8323 SW Cirrus Drive, Beaverton,

OR 97008, U.S.A.

Spain Branch

Tel: (0532)502-8105 Fax: (0532)502-8109

Parque Empresarial, San Fernando, Edificio Europa,

a

Tel: (503)466-3721 Fax: (503)629-0827

1

Planta, E-28831 Madrid, Spain

Toshiba Electronics Shenzhen Co., Ltd.

Room 2601-2609, 2616, Office Tower Shun Hing Square,

Di Wang Commercial Center, 5002 Shennan Road East,

Shenzhen, 518008, China

Tel: (91)660-6798 Fax:(91)660-6799

Raleigh, NC

3120 Highwoods Blvd., #108, Raleigh,

NC 27604, U.S.A.

U.K. Branch

Riverside Way, Camberley Surrey,

GU15 3YA, U.K.

Tel: (0755)2583-0827 Fax: (0755)8246-1581

Tel: (919)859-2800 Fax: (919)859-2898

Tel: (01276)69-4600 Fax: (01276)69-4800

Toshiba Electronics Korea Corporation

Richardson,TX (Dallas)

777 East Campbell Rd., #650, Richardson,

TX 75081, U.S.A.

Sweden Branch

Gustavslundsvägen 18, 5th Floor,

S-167 15 Bromma, Sweden

Tel: (08)704-0900 Fax: (08)80-8459

Seoul Head Office

891, Sejong Securities Bldg. 20F, Daechi-dong,

Gangnam-gu, Seoul, 135-738, Korea

Tel: (02)3484-4334 Fax: (02)3484-4302

Tel: (972)480-0470 Fax: (972)235-4114

San Jose Engineering Center, CA

1060 Rincon Circle, San Jose, CA 95131, U.S.A.

Tel: (408)526-2400 Fax:(408)526-8910

Toshiba Electronics Asia

(Singapore) Pte. Ltd.

Gumi Office

6F, Goodmorning Securities Building,

56 Songjung-dong, Gumi-shi,

Kyeongbuk, 730-090, Korea

Tel: (054)456-7613 Fax: (054)456-7617

Wakefield, MA (Boston)

Singapore Head Office

438B Alexandra Road, #06-08/12 Alexandra

Technopark, Singapore 119968

Tel: (6278)5252 Fax: (6271)5155

401 Edgewater Place, #360, Wakefield,

MA 01880-6229, U.S.A.

Tel: (781)224-0074 Fax: (781)224-1095

Toshiba Electronics (Shanghai) Co., Ltd.

11F, HSBC Tower, 101

Toshiba do Brasil, S.A.

Toshiba Electronics Service

(Thailand) Co., Ltd.

Yin Cheng East Road, Pudong New Area, Shanghai,

200120, China

Electronics Component Div.

Rua Afonso Celso,55213 ardar,

Vila Mariana CEP 04119-002, Sa˜o Paulo, Brasil

Tel: (011)5576-6619 Fax: (011)5576-6607

135 Moo 5, Bangkadi Industrial Park, Tivanon Road,

Pathumthani, 12000, Thailand

Tel: (021)6841-0666 Fax: (021)6841-5002

Tel: (02)501-1635 Fax: (02)501-1638

Hangzhou Office

9F Zhejiang San Rui Bldg. No. 36 QingChun Road,

Hangzhou 310004, China

Toshiba Electronics Trading

(Malaysia)Sdn. Bhd.

Toshiba India Private Ltd.

6F DR. Gopal Das Bhawan 28,

Tel: (0571)8704-0255 Fax: (0571)8704-0200

Barakhamba Road, New Delhi, 110001, India

Tel: (011)2371-4601 Fax: (011)2371-4603

Kuala Lumpur Head Office

Tsurong Xiamen Xiangyu Trading Co., Ltd.

14G, International Bank BLDG., No.8 Lujiang Road,

Xiamen, 361001, China

Suite W1203, Wisma Consplant, No.2,

Jalan SS 16/4, Subang Jaya, 47500 Petaling Jaya,

Selangor Darul Ehsan, Malaysia

Tel: (0592)226-1398 Fax: (0592)226-1399

Tel: (03)5631-6311 Fax: (03)5631-6307

Toshiba Electronics Taiwan Corporation

Penang Office

Suite 13-1, 13th Floor, Menara Penang Garden,

42-A, Jalan Sultan Ahmad Shah,

10050 Penang, Malaysia

Taipei Head Office

17F, Union Enterprise Plaza Building, 109

Min Sheng East Road, Section 3, Taipei,

105, Taiwan

Tel: (04)226-8523 Fax: (04)226-8515

Tel: (02)2514-9988 Fax: (02)2514-7892

Toshiba Electronics Philippines, Inc.

26th Floor, Citibank Tower, Valero Street, Makati,

Manila, Philippines

Kaohsiung Office

16F-A, Chung-Cheng Building, 2, Chung-Cheng 3Road,

Kaohsiung, 800, Taiwan

Tel: (02)750-5510 Fax: (02)750-5511

Tel: (07)237-0826 Fax: (07)236-0046

The information contained herein is subject to change without notice. 021023_D

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

021023_C

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a

safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to

property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products

specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc. 021023_A

The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment,

industrial robotics, domestic appliances, etc.). These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality

and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control

instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety

devices, etc. Unintended Usage of Toshiba products listed in this document shall be made at the customer’s own risk. 021023_B

TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030519_Q

2004

Previous edition: BCE0017A

2004-03(0.5k)PC-O

Printed in Japan

Semiconductor Company

Website: http://www.semicon.toshiba.co.jp/eng

100% recycled paper


型号：	2SK1746
厂家：	TOSHIBA
描述：	TRANSISTOR 2 A, 600 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power 开关晶体管
文件：	总45页 (文件大小：1424K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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