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2SK2331 [TOSHIBA]

N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS); N沟道单栅极调制DOPE TYPE（ SHF波段低噪声放大器应用）

2SK2331


元器件型号：	2SK2331
生产厂家：	TOSHIBA SEMICONDUCTOR
描述和应用：	N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) N沟道单栅极调制DOPE TYPE（ SHF波段低噪声放大器应用）晶体栅极放大器小信号场效应晶体管射频小信号场效应晶体管
PDF文件：	总6页 (文件大小：316K)
下载文档：	下载PDF数据表文档文件
型号参数：2SK2331参数

2SK2331TE12R

TRANSISTOR X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal

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0 TOSHIBA

2SK2332

N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

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39 TOSHIBA

2SK2332TE12L

TRANSISTOR X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal

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1 TOSHIBA

2SK2332TE12R

TRANSISTOR X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal

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0 TOSHIBA

2SK2333

HVX-2 Series Power MOSFET(700V 6A)

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350 SHINDENGEN

2SK2334(L)

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-251

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69 ETC

2SK2334(S)

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-252AA

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26 ETC

2SK2334(S)TL

Power Field-Effect Transistor, 20A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 RENESAS

2SK2334(S)TR

Power Field-Effect Transistor, 20A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 RENESAS

2SK2334L

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24 ETC

2SK2334LL

20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3

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0 RENESAS

2SK2334S

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17 ETC

2SK2334SS

Power Field-Effect Transistor, 20A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

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0 RENESAS

2SK2339

Silicon N-Channel Power F-MOS

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55 PANASONIC

2SK2340

Silicon N-Channel Power F-MOS FET

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46 PANASONIC

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